JP2009191281A - Film-forming apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film-forming apparatus which forms a thin film showing an adequate thickness distribution within a substrate face on the substrate by chemical vapor deposition. <P>SOLUTION: A CVD apparatus 1 for forming the thin film on the substrate 5 by chemical vapor deposition with the use of a production gas 6 in a chamber 10 has a gas introduction pipe 20 for introducing the production gas 6 arranged so as to contact to a wall of the chamber 10 and connected to an upper plate 11 which is arranged in the chamber 10 and supplies the production gas 6 to the substrate 5. For this reason, the production gas 6 having an almost equal temperature to that in the inside of the chamber 10 is discharged from a shower plate 13 of the upper plate 11. Thereby, the film-forming apparatus can form the film with little film-thickness dispersion within the face of the substrate 5 so that the discharge of the production gas 6 does not exert an effect on the temperature of substrate 5 held at a predetermined temperature. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a film forming apparatus for forming a thin film on a substrate by chemical vapor deposition.

In the manufacture of semiconductor devices, electro-optical devices and the like, film forming apparatuses using chemical vapor deposition are used.
For example, a CVD (Chemical Vapor Deposition) apparatus is known as a film forming apparatus. In a single wafer type parallel plate type CVD apparatus, a first plate and a second plate are arranged in a chamber so as to face each other, and a shower in which generated gas is jetted toward the second plate on the first plate. A plate is provided. A substrate is placed on the second plate, and the temperature of the substrate is maintained at 200 to 800 ° C. In this state, the generated gas is allowed to flow into the chamber, and a chemical vapor reaction is performed on the heated substrate surface to form a desired thin film on the substrate. In addition, a plasma CVD apparatus that generates plasma between the first plate and the second plate in a reduced-pressure atmosphere and performs film formation using not only thermal energy but also plasma energy also uses a similar chemical vapor phase reaction. is doing.
In a CVD apparatus, there is a correlation between the temperature of the substrate and the film thickness of the film to be grown. A technique is disclosed in which the in-plane temperature is made uniform by dividing and controlling the heater temperature independently.

JP-A-5-209278

  The CVD apparatus as described above has a structure in which the generated gas is ejected from the shower plate of the first plate facing the substrate toward the substrate. The generated gas is supplied to the shower plate from the outside of the chamber through a gas introduction pipe. For this reason, when there is a large difference between the substrate temperature and the temperature of the generated gas to be ejected, the temperature of the substrate is partially lowered to have a non-uniform distribution in the surface, and the film thickness variation in the substrate surface increases. There's a problem.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  Application Example 1 A film forming apparatus according to this application example is a film forming apparatus that forms a thin film on a substrate by chemical vapor deposition using a generated gas in a chamber, and introduces the generated gas. A gas introduction pipe is provided in contact with the inner wall of the chamber, and is connected to a gas discharge portion disposed in the chamber.

According to this configuration, the gas introduction pipe for introducing the generated gas is piped in contact with the inner wall of the chamber, and is connected to the gas discharge section disposed in the chamber. For this reason, the product gas in the gas introduction pipe rises to a temperature substantially close to the temperature of the chamber and is discharged from the gas discharge portion. That is, the generated gas that is substantially equal to the temperature inside the chamber is discharged from the gas discharge unit. Thus, the film formation process with little variation in the film thickness within the substrate surface can be performed without affecting the temperature of the substrate where the discharge of the generated gas is maintained at a predetermined temperature.
Further, since the generated gas is warmed using heat conducted to the chamber, a heater is not used for heating the generated gas, and energy saving can be promoted.

  Application Example 2 In the film forming apparatus according to the application example described above, the film deposition apparatus includes a first plate as the gas discharge unit, and a second plate on which the substrate is placed, and the first plate and the It is desirable that the second plate is disposed to face the second plate.

  According to this configuration, the first plate and the second plate are disposed so as to face each other, and the generated gas is evenly supplied from the shower plate of the first plate to the substrate placed on the second plate. Therefore, it is possible to perform a film forming process with little in-plane film thickness variation.

  Application Example 3 In the film forming apparatus according to the application example described above, it is preferable that the gas introduction pipe is spirally connected to the inner wall of the chamber.

  According to this configuration, since the gas introduction pipe is spirally connected to the inner wall of the chamber, the path of the gas introduction pipe can be routed long in the chamber, and the temperature of the gas discharged from the gas discharge section can be adjusted. It becomes easy to keep at a temperature close to the temperature.

  Application Example 4 In the film forming apparatus according to the application example described above, the gas introduction pipe is continuously piped around the inner periphery of the chamber so as to be in contact with the inner wall of the chamber and to be folded back at the upper and lower portions of the chamber. It is desirable that

  According to this configuration, since the gas introduction pipe is continuously piped so as to be in contact with the inner wall of the chamber and folded back at the upper part and the lower part of the chamber, the gas introduction pipe can be routed long in the chamber, It becomes easy to keep the temperature of the gas discharged from the chamber close to the chamber temperature.

  Application Example 5 In the film forming apparatus according to the application example described above, it is preferable that an aluminum protective plate is provided to cover the gas introduction pipe in the chamber.

  According to this configuration, when plasma is generated by cleaning the inside of the chamber, the material of the gas introduction tube does not affect the generation of plasma, and plasma can be generated stably.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. In this embodiment, a CVD apparatus will be described as an example of a film forming apparatus.
(Embodiment)

FIG. 1 is a schematic explanatory view illustrating a CVD apparatus according to this embodiment. FIG. 2 is an explanatory view showing a piping state of a gas introduction pipe piped to the chamber.
The CVD apparatus 1 is a single-wafer parallel plate type, and a first plate 11 and a second plate 14 are arranged to face each other in a chamber 10 having aluminum as a base material.
The chamber 10 is provided with a gas introduction pipe 20 made of copper, aluminum or the like for introducing the generated gas 6 from the outside to the inside of the chamber 10. The gas introduction pipe 20 penetrates from the lower outer wall of the chamber 10, comes into contact with the inner wall of the chamber 10, and the gas introduction pipe 20 is connected to the upper side of the chamber 10 to connect the first plate 11 serving as a gas discharge unit. It is connected to the mouth 23. In addition, as shown in FIG. 2, the piping of the gas introduction pipe | tube 20 in the chamber 10 is spirally laid.
Further, a protective plate 25 made of aluminum is provided to cover the gas introduction pipe 20, and the surface of the protective plate 25 is anodized.

  The first plate 11 is provided with a diffusion plate 12 and a shower plate 13. The diffusion plate 12 is provided so that the generated gas 6 introduced from the connection port 23 is diffused, and the generated gas 6 is uniformly discharged from the shower plate 13 having a large number of gas outlets. The generated gas 6 is jetted from the shower plate 13 toward the second plate 14.

The second plate 14 includes a mounting table 15 on which the substrate 5 is mounted, and the mounting table 15 is provided with lift pin holes 16. Lift pins 17 that support the substrate 5 when the substrate 5 is carried into and out of the chamber 10 are inserted into the lift pin holes 16. The substrate is transferred by raising and lowering the lift pins 17.
Further, a lamp 30 is disposed below the second plate 14, and the substrate 5 is heated by irradiating the mounting table 15 with the lamp 30.
An exhaust port 31 is provided in the chamber 10, and a vacuum pump 32 is connected to the exhaust port 31 so that the gas in the chamber 10 can be discharged to the outside.

Film formation in the CVD apparatus 1 having the above-described configuration is performed as follows.
After the substrate 5 is mounted on the mounting table 15, the generated gas 6 of various materials is sent out from the shower plate 13 onto the substrate 5. At this time, the generated gas 6 is guided to the gas introduction pipe 20 spirally piped on the inner wall of the chamber 10 and discharged from the shower plate 13 through the diffusion plate 12 of the first plate 11. Since the mounting table 15 of the second plate 14 in the chamber 10 is heated to a high temperature, the heat is conducted to the chamber 10 and is in a heated state. 10 is maintained at about the same temperature. Then, the product gas 6 flowing in the gas introduction pipe 20 is also warmed and becomes substantially the same temperature as the chamber 10. Therefore, the generated gas 6 discharged from the shower plate 13 onto the substrate 5 has substantially the same temperature as the chamber 10.

Then, a chemical vapor reaction such as decomposition, reduction, oxidation, or substitution is performed on the main surface of the substrate 5 held at 200 to 800 ° C. to form a desired thin film on the main surface of the substrate 5. For example, a SiO ₂ film is formed on the substrate 5 by introducing a generated gas such as SiH ₄ gas or O ₂ gas.
Excess product gas 6 that does not contribute to film formation is exhausted from an exhaust port 31 formed at the bottom of the chamber 10 using a vacuum pump 32.

As described above, in the CVD apparatus 1 of the present embodiment, the gas introduction pipe 20 for introducing the generated gas 6 is piped in contact with the inner wall of the chamber 10 and is connected to the first plate 11 arranged in the chamber 10. For this reason, the product gas 6 in the gas introduction pipe 20 rises to a temperature substantially close to the temperature of the chamber 10 and is discharged from the shower plate 13. That is, the generated gas 6 substantially equal to the temperature of the chamber 10 is discharged from the shower plate 13. For this reason, the discharge of the generated gas 6 does not affect the temperature of the substrate 5 held at a predetermined temperature. In this way, it is possible to provide the CVD apparatus 1 that can perform the film forming process with little film thickness variation in the surface of the substrate 5.
In addition, since the heat conducted to the chamber 10 is used, a heater is not used for heating the generated gas 6, and energy saving can be promoted.

Further, since the gas introduction pipe 20 is spirally connected to the inner wall of the chamber 10, the path of the gas introduction pipe 20 can be drawn long in the chamber 10, and the temperature of the gas discharged from the shower plate 13 can be set to the chamber 10. It becomes easy to keep at a temperature close to the temperature.
Further, since the aluminum protective plate 25 covering the gas introduction pipe 20 is provided, the material of the gas introduction pipe 20 may affect the generation of plasma when the plasma is generated by cleaning the chamber 10 or the like. In addition, it is possible to generate plasma stably.

In this embodiment, the pipe of the gas introduction pipe 20 to the inner wall of the chamber 10 is spiral, but as another pipe, as shown in FIG. You may pipe it.
In this way, similarly to the spiral pipe, the path of the gas introduction pipe 20 can be routed long in the chamber 10, and the temperature of the generated gas 6 discharged from the shower plate 13 is kept close to the temperature of the chamber 10. It becomes easy.

Although the present embodiment has been described with reference to a CVD apparatus, the present invention can also be implemented in a plasma CVD apparatus that uses thermal energy and plasma energy for film formation.
For example, in a single wafer type parallel plate type plasma CVD apparatus, a substrate is placed between a pair of electrodes in a reduced-pressure atmosphere, and a high frequency voltage is applied to the electrodes to create a discharge state. Is generated by depositing a predetermined film on the substrate. In such a plasma CVD apparatus, the temperature of the substrate is set to 200 to 500 ° C. in order to promote film growth, and the generated gas is discharged from the shower plate onto the substrate.
The temperature of the substrate where the gas introduction pipe for introducing the product gas is in contact with the inner wall of the chamber so that the product gas substantially equal to the temperature of the chamber is discharged from the shower plate and the discharge of the product gas is maintained at a predetermined temperature Will not be affected. In this way, it is possible to provide a plasma CVD apparatus that enables a film forming process with little film thickness variation in the substrate surface.

  As described above, the present invention can be used for a dry etching apparatus, an annealing furnace, and the like in addition to the above-described CVD apparatus and plasma CVD apparatus.

The schematic explanatory drawing explaining the CVD apparatus of this embodiment. Explanatory drawing explaining the piping state of the gas introduction pipe | tube of this embodiment. Explanatory drawing explaining the piping state of the gas introduction pipe | tube in other embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... CVD apparatus, 5 ... Board | substrate, 6 ... Product gas, 10 ... Chamber, 11 ... 1st plate as a gas discharge part, 12 ... Diffusion plate, 13 ... Shower plate, 14 ... 2nd plate, 15 ... Mount Table, 16 ... Lift pin hole, 17 ... Lift pin, 20 ... Gas introduction pipe, 23 ... Connection port, 25 ... Protection plate, 30 ... Lamp, 31 ... Exhaust port, 32 ... Vacuum pump.

Claims (5)

A film forming apparatus for forming a thin film on a substrate by chemical vapor deposition using a generated gas in a chamber,
A film forming apparatus, wherein a gas introduction pipe for introducing the generated gas is provided in contact with an inner wall of the chamber, and is connected to a gas discharge portion disposed in the chamber. The film forming apparatus according to claim 1,
A first plate as the gas discharge part;
A second plate on which the substrate is placed,
The film forming apparatus, wherein the first plate and the second plate are arranged to face each other. In the film-forming apparatus of Claim 1 or 2,
The film forming apparatus, wherein the gas introduction pipe is in a spiral shape in contact with the inner wall of the chamber. In the film-forming apparatus of Claim 1 or 2,
The film forming apparatus, wherein the gas introduction pipe is continuously connected to the inner wall of the chamber so as to be in contact with an inner wall of the chamber and to be folded back at an upper portion and a lower portion of the chamber. In the film-forming apparatus as described in any one of Claims 1 thru | or 4,
2. A film forming apparatus, comprising: an aluminum protective plate that covers the gas introduction pipe piped in the chamber.

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