JP2009177129A - Manufacturing method of boron-doped material for semiconductor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an inexpensive boron-doped material for a semiconductor in which quality of material is uniform, and the quantity of volatilizing boron is stable for every usage. <P>SOLUTION: This manufacturing method of a boron-doped material for a semiconductor includes processes of converting material powder containing boron-containing crystalline glass powder to slurry; providing a green sheet by molding the provided slurry; and sintering the green sheet. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a doping material for doping a semiconductor with boron. Specifically, the present invention relates to a method for producing a boron doping material for semiconductors in which a glass powder containing boron is slurried and green sheet-molded and then sintered to form a wafer.

Conventionally, boron doping materials for semiconductors for doping boron into silicon substrates and the like are obtained by sintering boron nitride powder or crystallizing a glass molded body containing boron and then cutting it into a wafer. A crystallized glass type has been proposed (see, for example, Patent Document 1). As a method for doping is to heat the surface of the semiconductor for the boron dopant of B ₂ O ₃ is volatilized, depositing a B ₂ O ₃ on the surface of a substrate such as oppositely disposed silicon wafer in an oxidizing atmosphere The method of diffusing inside the substrate is employed.

The required properties of the boron doping material for semiconductors are as follows: (1) boron is volatilized from the material surface by heating so that boron is sufficiently diffused into a base material such as a silicon wafer set facing the doping material; 2) It can withstand repeated use, (3) The amount of volatilized boron is stable every time it is used, and (4) It is easy to process into the same shape as the substrate.
JP 2002-93734 A

  Boron nitride for semiconductors made of sintered boron nitride powder has an excessive volatilization amount of boron, so it is necessary to frequently clean the boron doping equipment, and the substrate such as a silicon wafer in the doping process. There is a problem that the damage to the material is large. Furthermore, boron doping materials for semiconductors are usually heat-treated before use so that the volatilization of boron is sufficiently performed. However, in the case of a doping material obtained by sintering boron nitride powder, the heat treatment is generally performed before use. Must be done every time.

  On the other hand, in the case of a dope material using crystallized glass, there is an advantage that damage to the base material is relatively small, and if the heat treatment before use is first performed once, it is almost unnecessary thereafter. However, in order to satisfy the condition (3), it is necessary to cast the glass so that the glass is uniformly melted to have a desired shape. However, it is difficult to obtain uniform crystallized glass, especially when manufacturing large castings to produce large-diameter wafers, because it becomes difficult to control bubbles and devitrification of the castings. is there. In addition, there is a problem that the equipment is expensive.

  Accordingly, an object of the present invention is to provide a boron doping material for semiconductors that is uniform in material, has a stable amount of volatilized boron for each use, and is inexpensive.

  As a result of intensive studies, the present inventors have found that the above-mentioned problems can be solved by making a boron-containing crystalline glass powder into a slurry and then forming a green sheet and then sintering it to form a wafer, which is proposed as the present invention. Is. Here, “boron-containing crystalline glass powder” refers to a glass powder containing boron as a composition and having a property of precipitating crystals by heat treatment.

  That is, the method for producing a boron doping material for a semiconductor according to the present invention includes a step of slurrying a raw material powder containing a boron-containing crystalline glass powder, a step of forming the obtained slurry to obtain a green sheet, and a firing of the green sheet. Including the step of tying.

  The manufacturing method of the present invention is characterized in that, unlike a conventional method of crystallizing a cast-molded glass molded body, a boron-doped material for a semiconductor is manufactured by sintering and crystallization of a green sheet-molded glass powder. Yes. Here, as the glass powder, a glass raw material powder obtained by melting, vitrifying, and molding, pulverizing, and classifying is used. Therefore, even if the raw glass obtained after melting contains bubbles or striae, or is inferior in uniformity, these problems are solved by going through pulverization, classification, and sintering processes. Thus, a uniform glass sintered body can be obtained. As described above, according to the production method of the present invention, it is not necessary to precisely control bubbles, striae, and uniformity during the production of glass, and as a result, the melting cost can be suppressed.

  When a wafer having a large diameter is produced by a conventional manufacturing method, the heat capacity of the glass molded body is increased, and it becomes difficult to cool, so that an unreasonable devitrified substance is likely to be precipitated. If it does so, in the subsequent crystallization process, the said devitrified substance became a nucleus, and it became easy to precipitate a big crystal, and there existed a problem that a uniform crystal was difficult to be obtained. Therefore, it has been difficult to produce a long semiconductor boron doping material having a large diameter, specifically, a diameter of 100 mm or more. However, according to the manufacturing method of the present invention, it becomes possible to easily manufacture a boron doping material for a semiconductor having a desired size according to the size of the green sheet to be manufactured. Further, by adjusting the thickness of the green sheet or by laminating and sintering a plurality of green sheets, it becomes possible to easily obtain a boron dopant for a semiconductor having a desired thickness.

  Furthermore, in the conventional manufacturing method, it was necessary to cut the crystallized glass casting into a wafer shape. However, according to the manufacturing method of the present invention, since there is no cutting loss when cutting into a wafer shape, the material efficiency is increased. This makes it possible to produce a boron-doped material for semiconductors at a low cost.

  2ndly, the manufacturing method of the boron dope material for semiconductors of this invention is characterized by laminating | stacking a green sheet and sintering.

Third, the method for producing a boron doping material for a semiconductor according to the present invention is characterized in that an average particle diameter D ₅₀ of the boron-containing crystalline glass powder is 0.1 to 10 μm.

Fourth, the method for producing a boron dopant for a semiconductor according to the present invention is characterized in that the boron-containing crystalline glass powder contains 15 to 45% by mass of B ₂ O ₃ as a glass composition.

Fifth, in the method for producing a boron dopant for a semiconductor according to the present invention, the boron-containing crystalline glass powder is B ₂ O ₃ —SiO ₂ —Al ₂ O ₃ -based glass or B ₂ O ₃ —Al ₂ O ₃ —. It is BaO type glass. Here, “B ₂ O ₃ —SiO ₂ —Al ₂ O ₃ -based glass” refers to glass containing B ₂ O ₃ , SiO ₂ and Al ₂ O ₃ as essential components as a glass composition. Further, “B ₂ O ₃ —Al ₂ O ₃ —BaO-based glass” refers to glass containing B ₂ O ₃ , Al ₂ O ₃ and BaO as essential components as a glass composition.

  Sixth, the method for producing a boron doping material for semiconductor according to the present invention is characterized in that the raw material powder contains 1 to 60% by mass of alumina powder.

  When the raw material powder contains alumina powder, it is possible to further improve the mechanical strength and heat resistance of the boron doping material for semiconductor obtained. In particular, even when a large-diameter boron-doped material for semiconductors is used, there is an advantage that warpage hardly occurs during use and heat resistance is excellent.

  Seventh, the method for producing a boron doping material for a semiconductor according to the present invention is characterized in that the green sheet has a thickness of 30 to 1500 μm.

  Eighth, the boron doping material for semiconductor of the present invention is characterized in that the slurry has a viscosity of 1 to 50 Pa · s.

  Ninthly, the method for producing a boron doping material for semiconductor according to the present invention is characterized in that two or more kinds of green sheets containing different components are laminated.

  By laminating two or more kinds of green sheets containing different components, for example, it becomes possible to produce a boron dopant for semiconductors having excellent mechanical strength or heat resistance while maintaining boron volatilization ability.

  10thly, the manufacturing method of the boron dope material for semiconductors of this invention is characterized by laminating | stacking the green sheet which consists of alumina powder.

  By adopting such a configuration, there is an advantage that, even when a boron-doped material for a semiconductor having a large diameter is used, warpage hardly occurs at the time of use and heat resistance is excellent.

  Eleventh, the boron dopant for semiconductor of the present invention is manufactured by any one of the above-described manufacturing methods.

  12thly, this invention is a boron dope material for semiconductors which has the laminated body structure which consists of a several inorganic powder sintered compact layer, Comprising: Part or all of an inorganic powder sintered compact layer is boron containing crystallinity. The present invention relates to a boron-doped material for semiconductor, comprising a sintered body of inorganic powder containing glass powder.

  Thirteenthly, the boron dopant for semiconductor of the present invention is characterized by having a thickness of 0.5 to 10 mm and a diameter of 50 to 300 mm.

  The method for producing a boron doping material for a semiconductor according to the present invention includes a step of slurrying a raw material powder containing a boron-containing crystalline glass powder, a step of forming the obtained slurry to obtain a green sheet, and a sintering of the green sheet Including a process.

  In the present invention, boron-containing crystalline glass powder is used as a main component as the raw material powder. By using crystalline glass, it is possible to obtain a boron doping material for a semiconductor made of a crystallized glass sintered body, and it is possible to maintain sufficient heat resistance when boron is volatilized by heating. Even when the semiconductor boron-doped material is cut into a wafer and used, it can be prevented from being softened and deformed by heat.

The content of B ₂ O ₃ in the boron-containing crystalline glass powder is preferably 15 to 45% by mass, and more preferably 18 to 40% by mass. When the content of B ₂ O ₃ is less than 15% by mass, the volatilization amount of boron to the substrate tends to be insufficient and the volatilization temperature tends to increase. On the other hand, if the content of B ₂ O ₃ exceeds 45% by mass, the strength of the boron dopant for semiconductor when boron is volatilized by heating tends to be inferior and tends to warp during heat treatment.

Specific examples of the boron-containing crystalline glass powder are not particularly limited, and examples thereof include B ₂ O ₃ —SiO ₂ —Al ₂ O ₃ glass, B ₂ O ₃ —Al ₂ O ₃ —BaO glass, and the like. . If these glasses are used, it is easy to obtain a boron doping material for semiconductors having high heat resistance and a large volatilization amount of boron.

The average particle diameter D ₅₀ of the boron-containing crystalline glass powder is preferably 0.1 to 10 μm, more preferably 0.5 to 8 μm, and further preferably 1 to 5 μm. The average particle diameter D ₅₀ 0.1μm less, pulverization is difficult, the manufacturing cost is increased, there is a tendency that molding becomes difficult. On the other hand, a 10μm larger average particle diameter D _50, and reduced density of the green sheet, sintering tends to be insufficient.

In the present invention, the average particle diameter D ₅₀ refers to a value measured by the measuring device using a laser diffraction scattering method.

  In the present invention, in order to improve the mechanical strength and heat resistance of the boron-doped material for semiconductor, the raw material powder may contain alumina powder. The content of the alumina powder is preferably 1 to 60% by mass in the raw material powder, more preferably 5 to 40% by mass, and further preferably 10 to 30% by mass. When the added amount of the alumina powder is less than 1% by mass, it is difficult to obtain a desired effect. On the other hand, if the amount of alumina powder added exceeds 60% by mass, sintering tends to be insufficient.

  A metal oxide powder other than alumina powder, silica powder, glass powder, or the like may be added as appropriate. In this case, the addition amount is preferably 30% by mass or less in the total amount in the raw material powder. When the added amount exceeds 30% by mass, sintering tends to be insufficient.

Boron-containing crystalline glass powder is obtained by blending raw material powder containing B ₂ O ₃ to form a batch, for example, melting it for about 1 hour at a temperature of about 1600 ° C. and vitrifying it, followed by molding, pulverization, and classification. be able to.

  A slurry can be obtained by adding and kneading a binder, a plasticizer, a solvent and the like to the raw material powder containing the boron-containing crystalline glass powder.

  As the binder, a thermoplastic resin is usually used. The thermoplastic resin is a component that increases the film strength after drying and imparts flexibility, and the content is generally about 5 to 30% by mass. As the thermoplastic resin, acrylic resins such as polybutyl methacrylate, polymethyl methacrylate and polyethyl methacrylate, polyvinyl butyral, ethyl cellulose and the like can be used, and these can be used alone or in combination.

  The plasticizer is a component that controls the drying speed and imparts flexibility to the dry film, and the content thereof is generally about 0 to 10% by mass. As the plasticizer, butyl benzyl phthalate, dioctyl phthalate, diisooctyl phthalate, dicapryl phthalate, dibutyl phthalate and the like can be used, and these can be used alone or in combination.

  The solvent is a material for pasting the material, and its content is generally about 10 to 50% by mass. As the solvent, for example, terpineol, methyl ethyl ketone, diethylene glycol monobutyl ether acetate, 2,2,4-trimethyl-1,3-pentadiol monoisobutyrate or the like can be used alone or in combination.

  The obtained slurry is formed into a sheet on a film excellent in mechanical and thermal stability such as polyethylene terephthalate (PET) by, for example, a doctor blade method, and after the sheet is formed, the solvent or solvent is removed by drying. It can be removed to form a green sheet.

  As for the ratio of the raw material powder which occupies in a green sheet, about 60-95 mass% is common.

  The thickness of the green sheet is preferably 30 to 1500 μm, more preferably 50 to 1000 μm, more preferably 100 to 500 μm, and most preferably 150 to 300 μm. When the thickness of the green sheet is less than 30 μm, the green sheet tends to be easily peeled when peeled off from the support film or when a plurality of green sheets are laminated. On the other hand, if the thickness of the green sheet is greater than 1500 μm, cracks are likely to occur during sheet formation.

  The viscosity of the slurry during doctor blade is preferably 1 to 50 Pa · s, more preferably 2 to 30 Pa · s, and even more preferably 3 to 20 Pa · s. When the slurry viscosity is lower than 1 Pa · s, the occurrence of craters and the variation in film thickness tend to increase during sheet forming. On the other hand, when the slurry viscosity is higher than 50 Pa · s, the fluidity of the slurry is deteriorated, and unevenness and streaks enter the sheet, making it difficult to obtain a uniform film. Tends to increase and material loss tends to increase. The viscosity of the slurry can be adjusted by appropriately selecting the amount of binder, plasticizer and solvent added.

  In the present invention, a wafer having an arbitrary thickness can be manufactured by laminating and thermocompression bonding the obtained green sheets. The number of sheets to be stacked may be appropriately selected within the range of, for example, 2 to 100, preferably 5 to 50, depending on the thickness of the green sheet.

  A plurality of green sheets containing a single composition may be laminated, but two or more kinds of green sheets containing different components may be laminated. For example, by laminating a green sheet mainly composed of a boron-containing crystalline glass powder and a green sheet composed of a filler-containing green sheet or alumina powder, the mechanical strength and heat resistance can be maintained while maintaining boron volatility. It becomes possible to produce an excellent boron dopant for semiconductor.

  The obtained green sheet is punched into a desired shape as necessary. When the green sheets are laminated, they may be laminated after being punched into a desired shape, or may be punched after being laminated.

  Then, the boron dope material for semiconductors can be obtained by sintering a green sheet. As a sintering temperature, it is preferable that it is 1000-1300 degreeC, and it is more preferable that it is 1100-1200 degreeC. The sintering time is appropriately adjusted in the range of, for example, 0.5 to 10 hours, further 1 to 8 hours, depending on the sintering temperature.

  In the sintering process, the boron-containing crystalline glass powder is crystallized. Therefore, the obtained boron-doped material for semiconductor maintains heat resistance during use, and can control softening and deformation of the wafer.

  The boron-doped material for semiconductor of the present invention has a laminated structure composed of a plurality of inorganic powder sintered body layers, and a part or all of the inorganic powder sintered body layer contains an inorganic powder containing boron-containing crystalline glass powder. It consists of the sintered compact of this. Each inorganic powder sintered compact layer originates from the sintered compact of each green sheet in the manufacturing process of the boron dope material for semiconductors.

  As the structure of the boron doped material for semiconductor of the present invention, a structure in which a plurality of sintered layers of boron-containing crystalline glass powder containing a single composition are laminated, two or more kinds of boron containing different compositions A structure formed by laminating a plurality of sintered layers of crystalline glass powder is exemplified. In addition, a structure formed by laminating a sintered body layer of boron-containing crystalline glass powder and a sintered body layer of boron-containing crystalline glass powder containing a filler, a sintered body layer of boron-containing crystalline glass powder, and Examples include a structure in which a sintered body layer of alumina powder is laminated. With this structure, it is possible to provide a boron doping material for semiconductors that has excellent mechanical strength and heat resistance while maintaining boron volatility. It becomes.

  The thickness of the boron dope material for semiconductor of the present invention is preferably 0.5 to 10 mm, and more preferably 1 to 5 mm. When the thickness of the boron-doped material for semiconductor is less than 0.5 mm, the mechanical strength and heat resistance tend to be inferior, and when it exceeds 10 mm, handling tends to be difficult.

  The shape of the boron doped material for semiconductor is not particularly limited, and examples thereof include a disk shape and a rectangular shape. The magnitude | size of the boron dope material for semiconductors is suitably selected according to a use, for example, when the shape is a disk shape, it is preferable that a diameter is 50-300 mm, and it is more preferable that it is 100-200 mm. In the case of a rectangular shape, the length of one side is preferably 50 to 300 mm. As described above, according to the manufacturing method of the present invention, it is possible to easily manufacture a large-diameter boron dopant for a semiconductor. Specifically, it is suitable for producing a boron doping material for semiconductor having a diameter of 100 mm or more.

  EXAMPLES Hereinafter, although this invention is demonstrated in detail based on an Example, this invention is not limited to these Examples.

(Examples 1-5)
Each sample was prepared as follows. First, glass raw materials were prepared to make a batch, put in a platinum crucible, melted at 1600 ° C. for 1 hour, and vitrified. Subsequently, this molten glass was formed into a film shape with a water-cooled roller, then roughly crushed by a ball mill, and further wet-pulverized by adding alcohol to obtain a boron-containing crystalline glass powder having an average particle diameter D ₅₀ of 3 μm (boron to give a content of 25 wt% of _{B 2 O 3 -SiO 2 -Al 2} O 3 based glass).

  Next, a binder, a plasticizer and a solvent were added to the obtained boron-containing crystalline glass powder to prepare a slurry having the viscosity shown in Table 1.

  Next, the slurry is poured into a slurry dam having blades, and formed on a carrier film that has been moved in a certain direction, thereby continuously forming a green sheet having a thickness substantially corresponding to the gap between the blade and the carrier film. did.

  Thereafter, the organic solvent in the green sheet was evaporated and dried with hot air or infrared rays. Next, the green sheet was peeled off from the carrier film, laminated, and thermocompression bonded. Next, after cutting into predetermined dimensions, sintering was performed at 900 ° C. to 1300 ° C. for crystallization, and a sintered body (boron doping material for semiconductor) having the thickness shown in Table 1 was obtained.

  In Example 4, a green sheet made only of boron-containing crystalline glass powder and a green sheet made of raw material powder containing 80% by mass of boron-containing crystalline glass powder and 20% by mass of alumina powder are alternately laminated. Thus, a boron-doped material for a semiconductor was produced.

  Moreover, in Example 5, the boron dope for semiconductors was produced by laminating | stacking alternately the green sheet which consists only of boron containing crystalline glass powder, and the green sheet which consists of alumina powder.

  About the heat resistance of the obtained boron dope for semiconductors, it evaluated as follows. Each boron-doped material for semiconductor was processed into a rectangular shape of 40 mm × 20 mm, placed on a support base with a span of 30 mm, a weight of 15 g was applied to the center, and heating was performed. The whole sample was heated to 1200 ° C. and further to 1300 ° C. At that time, the case where the deformation was not performed at 1300 ° C. was evaluated as “◎”, the case where the deformation was not performed at 1200 ° C. but the deformation at 1300 ° C. was evaluated as “◯”, and the deformation at 1200 ° C. was evaluated as “X”. .

  In addition, the appearance of the green sheet was visually observed to check for cracks and streaks. The cracks and streaks were evaluated as “◯” for those that could not be confirmed and “×” for those that were confirmed.

  As is clear from Table 1, the boron dopant for semiconductor of the example was excellent in heat resistance. Particularly, Example 4 in which a green sheet made of boron-containing crystalline glass powder and a green sheet containing alumina powder were alternately laminated on the raw material powder, and a green sheet made of boron-containing crystalline glass powder and alumina powder were used. In Example 5 in which green sheets were laminated, the heat resistance was particularly good. In each example, no cracks or streaks were observed on the green sheet.

(Examples 6 to 8)
A green sheet having a thickness of 200 μm was obtained by the same production method as in Examples 1-5. The slurry viscosity was 10 Pa · s.

  The obtained green sheets were laminated and thermocompression bonded. Subsequently, after cutting into a wafer having a diameter of 150 mm, sintering was performed at 900 to 1300 ° C. to crystallize, and a sintered body having the thickness shown in Table 2 was obtained.

  In Example 6, a boron doping material for a semiconductor was prepared by laminating green sheets made of raw material powder containing 80% by mass of boron-containing crystalline glass powder and 20% by mass of alumina powder.

  In Examples 7 and 8, a boron dope for semiconductor was produced by alternately laminating a green sheet made of only boron-containing crystalline glass powder and a green sheet made of alumina powder.

  About the obtained boron dope material for semiconductors, the heat resistance test was done as follows.

A boron-doped material for semiconductor was placed on a quartz boat, heated in a heat treatment furnace, held at 1150 ° C. for 10 hours, and then cooled to room temperature. After repeating this heating profile 10 times, warping of the boron dopant for semiconductor was confirmed. The warpage of the boron-doped material for semiconductor was measured by placing the boron-doped material for semiconductor on a surface plate and inserting a gap gauge between the outer periphery of the boron-doped material for semiconductor and the surface plate. The warp evaluation was performed with the boron doping material for semiconductors having a warpage of less than 1 mm as “◯” and a warp of 1 mm or more as “x”. The results are shown in Table 2.
(Comparative Example 1)

First, glass raw materials were prepared to make a batch, put in a platinum crucible, melted at 1600 ° C. for 1 hour, and vitrified. Subsequently, this molten glass was cast in a molded body and annealed to obtain a cylindrical cast body (B ₂ O ₃ —SiO ₂ —Al ₂ O ₃ glass having a boron content of 25 mass%). The obtained cast body was heat-treated to crystallize the glass and cut into the diameters and thicknesses shown in Table 2 to obtain a boron dopant for semiconductor.

  About the obtained boron dope material for semiconductors, the heat resistance test was done like Example 6-8. The results are shown in Table 2.

  As is apparent from Table 2, in Examples 6 to 8, it is understood that a large-diameter boron-doped semiconductor material having good heat resistance is obtained. In particular, Examples 7 and 8 had good heat resistance even though the thickness was as thin as 2 mm or less. On the other hand, the boron dopant for semiconductor of Comparative Example 1 was inferior in heat resistance even with a thickness of 3 mm.

Claims (13)

  A method for producing a boron doping material for a semiconductor, comprising a step of slurrying a raw material powder containing a boron-containing crystalline glass powder, a step of forming the obtained slurry to obtain a green sheet, and a step of sintering the green sheet.   The method for producing a boron-doped material for semiconductor according to claim 1, wherein green sheets are laminated and sintered. The average particle diameter D ₅₀ of the boron-containing crystallizable glass powder, a method of manufacturing a semiconductor for boron doped material according to claim 1 or 2, characterized in that a 0.1 to 10 [mu] m. The boron-containing crystalline glass powder contains 15 to 45% by mass of B ₂ O ₃ as a glass composition. The method for producing a boron dopant for a semiconductor according to any one of claims 1 to 3. Boron-containing crystallizable glass powder _is one of _{B 2 O 3 -SiO 2 -Al 2} O 3 based glass or _B 2 _O 3 _-Al 2 _O 3 according to claim 1, wherein the a -BaO based glass A method for producing a boron-doped material for semiconductor according to claim 1.   6. The method for producing a boron dopant for semiconductor according to claim 1, wherein the raw material powder contains 1 to 60% by mass of alumina powder.   The method for producing a boron-doped material for a semiconductor according to any one of claims 1 to 6, wherein the green sheet has a thickness of 30 to 1500 µm.   The method for producing a boron dopant for a semiconductor according to any one of claims 1 to 7, wherein the viscosity of the slurry is 1 to 50 Pa · s.   The method for producing a boron dopant for a semiconductor according to any one of claims 2 to 8, wherein two or more kinds of green sheets containing different components are laminated.   Furthermore, the manufacturing method of the boron dope material for semiconductors in any one of Claims 2-9 which laminates | stacks the green sheet which consists of alumina powder.   The boron dope material for semiconductors manufactured by the manufacturing method in any one of Claims 1-10.   Sintering of inorganic powder, which is a boron doping material for a semiconductor having a laminate structure composed of a plurality of inorganic powder sintered body layers, wherein a part or all of the inorganic powder sintered body layer contains boron-containing crystalline glass powder A boron doping material for semiconductors, characterized by comprising a body.   The boron-doped material for semiconductor according to claim 11 or 12, which has a thickness of 0.5 to 10 mm and a diameter of 50 to 300 mm.