JP2009169346A - Method for creating mask pattern data and method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for creating mask pattern data, by which a mask pattern feature corrected by taking flare into consideration can be simplified and an amount of mask pattern drawing data can be decreased, resulting in reduction of load upon mask drawing and reduction of load upon mask defect inspection, and to provide a method for manufacturing a semiconductor device. <P>SOLUTION: The method for creating mask pattern data includes steps of: dividing an exposure region into a plurality of calculation mesh regions; calculating luminous energy coming to each calculation mesh region from the surrounding regions; and correcting a mask pattern dimension in accordance with the luminous energy in each mesh region coming from the surrounding regions. The method further includes, with respect to a pattern intersecting a grid defining boundaries of the calculation mesh regions, a step of calculating an exposure correction amount that corresponds to a simple arithmetic average of exposure corrections of the calculation mesh regions in contact with the grid, and a step of subjecting the pattern to correction of the mask pattern dimension in accordance with the calculated exposure correction amount. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor device manufacturing process, and in particular, mask pattern data for correcting a flare effect with a mask pattern and forming a fine and highly accurate pattern during wafer exposure such as EUV (Extreme Ultraviolet) lithography. The present invention relates to a manufacturing method and a manufacturing method of a semiconductor device.

  Conventionally, optical lithography such as i-line lithography with a wavelength of 365 nm, KrF lithography with 248 nm, ArF lithography with 193 nm has been used as a lithography technique used in the manufacturing process of a semiconductor device. Recently, since ArF lithography can no longer satisfy the resolution requirement, immersion lithography with higher resolution has been actively studied. However, even with this immersion lithography, resolution of 45 nm at a half pitch is the limit. Therefore, EUV having a wavelength of 13.5 nm has been actively studied as a lithography technique with a half pitch of 32 nm.

  As one of the problems of EUV lithography, there is a problem of lens flare. In EUV lithography, the exposure wavelength is as short as 13.5 nm. Due to the relationship between light absorption and refractive index, projection exposure is performed using a reflective lens system instead of a refractive lens system. The exposure light is scattered by the influence of the very fine surface roughness of the reflection lens composed of the multilayer mirror, and flare which is stray light is generated. Due to this flare, exposure fogging occurs and the pattern dimension changes according to the aperture ratio around the pattern. This is the problem of lens flare. Depending on the roughness of the resist and lens, a dimensional change of 0.7 nm may occur every time the aperture ratio increases by 1%. Since the target dimension is 32 nm level, the problem of lens flare is significant in the manufacture of LSIs in which various patterns coexist at various densities, especially in the manufacture of logic LSIs such as SoC (System on Chip) with many types of patterns. It is a problem.

  In order to solve the lens flare problem, a flare correction technique has been developed in which a pattern width on a mask is adjusted in accordance with an aperture ratio of a peripheral pattern to obtain a pattern with a desired dimensional accuracy. This flare correction technique is described in Patent Documents 1 and 2 listed below.

In this flare correction method, the stray light amount coming from the surrounding area is integrated into the target pattern, and correction is performed by applying a dimensional bias to the mask pattern corresponding to the increased light amount. That is, as shown in FIG. 2, the exposure area is divided into a plurality of calculation mesh areas, and the surrounding area of the target pattern, for example, (α _{i + l, j + m} , δ _{i + l, j + m} ) includes the target pattern. The amount of light (flare) given to the region (α _{i, j} , δ _{i, j} ) is obtained, and the calculation mesh region (α _{i, j} , δ _{i, j} ) is extended over each calculation mesh region around the target pattern. Integrally calculate the amount of light given to.

In this way, on the basis of the case where there is no flare, an increase in the amount of light given to the calculation mesh region (α _{i, j} , δ _{i, j} ) when there is a flare is obtained, and a desired value is obtained under the increased amount of light. In order to obtain a dimension, a dimension bias to the target pattern, that is, a dimension correction corresponding to the increase in the amount of light is performed on the mask pattern on the target calculation mesh region.

  In addition, as a method of dividing the calculation mesh area, there are a method in which the exposure area is a uniformly spaced mesh, a method in which the mesh interval is narrow in the vicinity of the target pattern, and the calculation amount is reduced as a wide mesh interval above a certain distance. Has been proposed. In addition, a method for correcting the aperture density of a pattern has been proposed in calculating the light quantity from a certain peripheral mesh region.

US Pat. No. 6,815,129 JP 2004-126486 A

  In the above conventional method, when the target pattern falls on the calculation mesh boundary, the mask pattern figure becomes complicated, the amount of mask pattern data becomes enormous, and data processing is burdened. There is a problem that the drawing is burdened and the mask pattern inspection is burdened. An example of such a problem is shown in FIG.

FIG. 3 shows an example of a mask pattern viewed from the top. A broken line indicates a grid that defines the boundary of the calculation mesh region, and reference numerals 201 to 205 exemplify a rectangular design pattern. All the patterns 201 to 205 shown here intersect with the grid. A _1,1 , A _1,2 , A _2,1 , A _2,2 indicate individual calculation mesh regions. Here, the increase in the amount of light due to the flare from the peripheral region is small in the calculation mesh regions A _1,2 , moderate in the calculation mesh regions A _1,1 and A _2,2 , and large in the calculation mesh region A _2,1. Illustrated.

  In this case, the mask pattern after correction in consideration of flare is a polygonal figure (for example, a convex shape) as indicated by reference numerals 201a to 205a. When the mask pattern becomes a polygon figure, the mask drawing figure coefficient increases, the drawing grid becomes finer, and the resolution of the mask inspection is required to be finer, which increases the load in the mask creation process. is there.

FIG. 4 shows an example in which a polygonal line-shaped target pattern 210 straddles three mesh regions A _1,1 , A _2,1 and A _2,2 . In this case as well, the mask pattern after correction in consideration of flare becomes a polygonal figure in which only the line width at the corner is thick as indicated by reference numeral 210a, and the same problem as described above occurs. Further, the conventional method has a problem of misalignment. FIG. 5 shows a mask pattern layout diagram for explaining the situation.

FIG. 5 shows an example in which a line-shaped pattern 220 straddles four calculation mesh regions A _1,1 , A _2,1 , A _1,2 and A _2,2 . In this case, the mask pattern after correcting the flare is a complex polygon as indicated by reference numeral 220a. In this way, the line width of the pattern falls within a desired range, but the position of the center of gravity of the pattern shifts up and down compared to before correction, and the position shifts up and down. This originates from the problem of the roughness of the calculation mesh, and is due to the difference in the amount of dimensional correction between the left end and the right end of the pattern. When trying to solve this problem with the conventional method, it is necessary to make the calculation mesh finer, which puts an excessive load on EDA (Electrical Design Automation) and also increases the time to generate the mask pattern. Arise.

  An object of the present invention is to provide a mask pattern data method capable of simplifying a mask pattern shape corrected in consideration of flare, reducing a mask pattern drawing data amount, reducing a mask drawing load associated therewith, and reducing a mask defect inspection load. And it is providing the manufacturing method of a semiconductor device.

  According to an embodiment of the present invention, when a mask pattern shape is corrected in consideration of flare, with respect to a pattern that intersects a grid that defines the boundary of a calculation mesh region, the exposure amount of each calculation mesh region that touches the grid A corrected exposure amount corresponding to a simple average of correction is calculated, and mask pattern dimension correction is performed on the pattern in accordance with the calculated exposure correction amount.

  According to another embodiment of the present invention, when a mask pattern shape is corrected in consideration of flare, a mesh boundary region having a predetermined width W centered on the boundary of the calculation mesh region, and outside the mesh boundary region The mesh internal region to be positioned is set in advance. For a pattern that intersects with the grid that defines the boundary of the calculation mesh region and crosses the other region beyond the mesh boundary region, for each mesh boundary region A and mesh internal region B that crosses the pattern The pattern is divided, and mask pattern dimension correction is performed for each divided pattern in accordance with the calculated exposure correction amount.

  According to this embodiment, the mask pattern shape corrected in consideration of the flare does not have to be a complex polygon as in the prior art. As a result, the mask pattern drawing data amount is reduced, and the mask drawing load associated therewith is reduced. Reduction of load of mask defect inspection can be achieved.

Embodiment 1 FIG.
A first embodiment of the present invention will be described with reference to FIG. FIG. 1 is a flowchart showing an example of a mask pattern data creation method according to the present invention.

  First, in step S2, the exposure area is divided into a plurality of calculation mesh areas. Next, in step S3, it is determined whether or not the mask pattern intersects with a grid that defines the boundary of the calculation mesh region.

  If it does not intersect with the grid, the process proceeds to step S3, and the exposure correction amount D assigned to the corresponding mesh region is applied to the pattern in the calculated mesh region. The exposure correction amount D is calculated in an integral manner by using the same method as the conventional method described with reference to FIG. 2, the exposure amount that covers the mesh region from outside the corresponding mesh region due to flare. Specifically, as shown in FIG. 2, the amount of exposure caused by the flare that each calculation mesh region outside the corresponding calculation mesh region gives to the corresponding calculation mesh region is obtained and integrated. At that time, the pattern area density in each calculation mesh area outside the calculation mesh area is calculated, and weight correction is performed by multiplying the density.

FIG. 6 is an explanatory diagram of the division of the calculation mesh and the calculation area according to the present invention. The calculation mesh 101 is used to divide into a plurality of regions, and a mesh boundary region having a predetermined width W around a grid that defines the boundary of the mesh 101 is set. In this way, each mesh area A _1,1 , A _1,2 , A _2,1 , A _2,2 ,... _{Is converted} into a mesh boundary area d _1,1 , d _{1,2 ,.} One of strides over the mesh region mesh boundary region _{b 1,1, b 1,2, ...,} c 1,1, c 1,2, ..., and mesh inner region _{a 1,1, a 1,2,} ... in Break down.

When the mask pattern intersects with the grid of the calculation mesh 101, the process proceeds to step S5 in FIG. 1, and the mask pattern is moved to the mesh boundary region (b _1,1 , b _1,2 ,..., C _1,1,. c ₁ , ₂ ,..., d _1,1 , d ₁ , ₂ ,.

  If not, the process proceeds to step S6 to correct the exposure amount of the mesh boundary region belonging to the mask pattern. This exposure amount correction is a simple average correction amount ΣDi / N of the correction amount Di assigned to each mesh region to which the pattern belongs. Here, N is the number of target mesh regions.

This exposure amount correction will be specifically described with reference to FIG. 1) When the mask pattern is in the mesh boundary region b ₂ , ₂ and intersects the grid of the calculation mesh 101, the exposure amount correction for the mask pattern is the exposure correction amount D ₂ for the mesh region A _{2, 2. ,} simple average of the exposure correction amount _{D 2,1} for ₂ and the mesh region _{a 2,1,} i.e. _{(D 2,2 + D 2,1) /} 2 to (S6).

2) When the mask pattern is in the mesh boundary region _d2,2 and intersects both the vertical grid and the horizontal grid, the exposure amount correction for the mask pattern is performed for the mesh region _A1,1 . correction amount _{D 1, 1,} the exposure correction amount for the mesh region _{A 1, 2 D 1, 2,} the mesh region _A exposed for _2,1 correction amount _{D 2,1,} exposure correction amount _{D 2} with respect to the mesh region _{A 2, 2,} A simple average of ₂ , ie, (D _1,1 + D _1,2 + D _2,1 + D _2,2 ) / 4 is set (S6).

3) While the mask pattern is in the mesh boundary area _{d 2, 2,} straddles only the mesh region _{A 2, 2} and the mesh region _{A 2,1,} grid computational mesh 101 intersects only the horizontal direction of the grid If there are, the exposure amount correction for the pattern, a simple average of the exposure correction amount _{D 2, 2} with respect to the exposure correction amount _{D 2,1} and the mesh region _{a 2, 2} for the mesh region _{a 2,1,} i.e. _{(D 2,1} + D _{2, 2} ) / 2 (S6).

4) When the mask pattern extends over the mesh boundary region, with respect to the pattern portion in the mesh boundary region, the correction amount Di assigned to the mesh region over which the corresponding pattern portion extends. A simple average correction amount ΣDi / N is applied, and the correction amount D assigned to the mesh region to which the pattern portion belongs is applied to the pattern portion outside the mesh boundary region (S7). For example, when the mask pattern crosses the mesh boundary (grid) 101 and extends into the mesh inner area a _2,2 , the mesh boundary area b _2,2 and the mesh inner area a _2,1 , the portion in the mesh inner area a _2,2 the exposure correction amount as the exposure correction amount _{D 2, 2} of a mesh area _{a 2, 2,} the exposure correction amount of the portion in the mesh boundary region _{b 2, 2,} the exposure correction amount _{D 2} of a mesh area _{a 2, 2, 2} and a simple average (D _2,2 + D _2,1 ) / 2 of the exposure correction amount D _2,1 of the mesh area A _{2,1, and} the exposure correction amount of the portion in the mesh inside area a _2,1 is the mesh The exposure correction amount D _2,1 for the area A _2,1 is assumed.

  Thereafter, the process proceeds to step S8, and mask pattern size correction is performed on each divided pattern portion in accordance with an ordinary method in accordance with the exposure correction amount assigned to each portion, and mask pattern data is created. The process ends (S9).

  An example of the mask pattern formed by the above procedure is shown in FIG. The mask patterns are all rectangular, and there are mask patterns that intersect with the grid of the calculation mesh 101 and mask patterns that do not intersect with the grid. However, when the mask pattern intersects the grid, the pattern does not extend beyond the mesh boundary region to the surrounding mesh segmented region. Patterns indicated by numerals are designed patterns 301 to 311, and patterns added with b as a subscript are patterns 301b to 311b after flare correction.

The exposure correction amount for the mesh region _{A 1, 1 D 1, 1,} the exposure correction amount _{D 1, 2} with respect to the mesh region _{A 1, 2,} the mesh region _A exposure correction amount for the _{2,1 D 2,1,} mesh area A during the exposure correction amount _{D 2,2} for _{2,2 illustrate} here the case a relationship of _{D 2,1> D 1,1 = D 2,2} > D 1,2. For the sake of clarity, it is assumed that D _2,1 −D _1,1 = D _2,2 −D ₁ and ₂ and the dimension is corrected using the exposure correction amount D ₁ and ₂ , so that it will be as designed. Shows the process tuned.

  Therefore, 1) For the patterns 303, 304, 305, 307, 308, and 310 that do not intersect the grid that is the calculation mesh boundary, mask dimension correction is performed in accordance with the exposure amount correction according to the calculation mesh region to which the pattern belongs. . In this case, as for patterns 303, 304, 307, 311 such as patterns 303, 304, 307, and 311 that are within the calculation mesh boundary region or over the calculation mesh boundary region, the exposure amount is simply corrected according to the calculation mesh region. Accompanying mask dimension correction.

  On the other hand, as for patterns 2, 306, and 309, which intersect with the grid that is the calculation mesh boundary and the pattern is related to the two calculation mesh areas, the exposure of the simple average of the exposure correction amount for the two calculation mesh areas Mask dimension correction according to the correction amount is performed.

  3) For a pattern that intersects both the vertical grid and the horizontal grid and spans four calculation mesh areas, such as pattern 301, a simple average of exposure correction amounts for the four calculation mesh areas Mask dimension correction according to the exposure correction amount is performed.

  The pattern shape subjected to mask dimension correction in this way is similar to the pattern shape before correction and is maintained in a simple rectangular shape. Therefore, according to the present method, the flare-corrected mask pattern shape does not become a complex polygon as shown in FIG. 3, but the mask pattern drawing data amount is reduced, and the mask drawing load associated therewith is reduced. This is effective in reducing the load of mask defect inspection.

  FIG. 8 shows another example of the mask pattern formed by the procedure of the present embodiment. This shows a case where the pattern intersects with the grid of the calculation mesh 101 and the pattern crosses the mesh boundary region and straddles another mesh division region. Reference numeral 401 denotes a design pattern, and reference numeral 401b denotes a pattern after flare correction is performed.

As with FIG. 7, the exposure correction amount for the mesh region _{A 1, 1 D 1, 1,} mesh area _{A 1, 2} exposure correction amount _{D 1, 2} with respect to the mesh region _{A 2,1} with respect to the exposure correction amount _{D 2, 1,} between the exposure correction amount _{D 2, 2} for the mesh region _{a 2, 2,} there is relation of _{D 2,1> D 1,1 = D 2,2} > D 1,2, D 2,1 - In this example, the process is tuned so that D _1,1 = D _2,2- D _1,2 and dimensional correction is performed using exposure correction amounts D _1,2 to be in accordance with the design dimensions. Yes.

  Of the design pattern 401, for a portion that intersects the calculation mesh boundary and straddles the two calculation mesh areas, exposure of the simple average exposure correction amount for the two calculation mesh areas within the calculation mesh boundary area to which the design pattern 401 belongs. Mask dimension correction according to the correction amount is performed. With respect to the portion of the mesh internal region, mask pattern size correction is performed according to the exposure correction amount of the mesh region to which the mesh belongs.

  On the other hand, FIG. 9 shows a case where flare correction is performed by the conventional method. The mask pattern at the design stage was a simple elbow pattern, but both have been changed to polygonal figures by performing flare correction. The size of the calculation mesh itself is the same in both the conventional method and the present method. However, in this method, the amount of change per step is small and dimensional correction is performed step by step, whereas in the conventional method, the steps are large. . A sudden change in a step produces a dimensional change in the vicinity of the step. In order to obtain a desired dimensional accuracy, it is necessary to reduce the dimensional change, and therefore it is necessary to reduce the calculation mesh interval.

  This method of changing dimensions in stages and obtaining desired dimensional accuracy without particularly reducing the calculation mesh interval can reduce the amount of calculation and data compared to the conventional method, and is effective as a mask pattern data creation method. The mask pattern (FIG. 8) generated in the present embodiment is a polygon pattern having a larger number of vertices than the mask pattern (FIG. 9) created by the conventional method. The straddling pattern is a relatively large pattern having at least a width W, and this is not a problem.

A third application example to which the procedure of this embodiment is applied is shown in FIG. Here, a case where the pattern straddles four calculation mesh regions and a plurality of calculation mesh boundary regions is illustrated. In this case, the design pattern 220 was divided into calculation mesh boundary regions straddling the calculation mesh, and exposure correction associated with flare and mask dimension correction processing associated therewith were performed on each. Again, exposure correction amount _{D 1, 1} for the mesh region _{A 1, 1,} the mesh region _A exposed for _1,2 correction amount _{D 1,} the mesh region _A exposed for _2,1 correction amount _{D 2,1,} mesh between regions _{a 2, 2} with respect to the exposure correction amount _{D 2, 2,} there is relation of _{D 2,1> D 1,1 = D 2,2} > D 1,2, D 2,1 -D 1, ₁ = the _D 2,2 _{-D 1,2,} so as designed dimensions when subjected to dimensional correction using the exposure correction amount _{D 1, 2,} illustrates a case where the process is tuned.

  According to this method, the mask pattern 220b after flare correction is locally left-right symmetrical, and there is no problem of displacement due to movement of the pattern centroid position, that is, the mask pattern correction method. On the other hand, an example in which the conventional method is applied to the present design pattern is shown in FIG. 5, and the mask pattern 220a after flare correction created by the conventional method is locally symmetric and misaligned. Therefore, it can be seen that this method is also effective from the viewpoint of positional deviation.

A fourth application example to which the procedure of this embodiment is applied is shown in FIG. Here, there are a plurality of design patterns in one calculation mesh boundary region, but a specific design pattern straddles four calculation mesh regions (for example, design pattern 221) and straddles two calculation mesh regions. An example of a case (for example, design patterns 222 and 223) is illustrated. Each pattern is subjected to exposure correction associated with flare and mask dimension correction processing associated therewith to generate mask patterns 221b, 222b and 223b after flare correction. Again, exposure correction amount _{D 1, 1} for the mesh region _{A 1, 1,} the mesh region _A exposed for _1,2 correction amount _{D 1,} the mesh region _A exposed for _2,1 correction amount _{D 2,1,} mesh between regions _{a 2, 2} with respect to the exposure correction amount _{D 2, 2,} there is relation of _{D 2,1> D 1,1 = D 2,2} > D 1,2, D 2,1 -D 1, ₁ = the _D 2,2 _{-D 1,2,} so as designed dimensions when subjected to dimensional correction using the exposure correction amount _{D 1, 2,} illustrates a case where the process is tuned.

The pattern 222b after the flare correction is in the calculation mesh boundary region that extends over the four calculation mesh regions A _{1,1 to} A _2,2 , but the pattern itself does not extend over the four calculation mesh regions. Since two calculation mesh areas A ₂ , ₁ and A ₂ , 2 are present, the calculation mesh areas are divided.

  The mask pattern data generation method according to the present embodiment can be coded as a computer program, and executes various recordings (eg, RAM, ROM, hard disk drive, optical disk drive, etc.) and various calculations. It can be easily implemented on a computer equipped with a processor.

  As described above, in this embodiment, the flare-corrected mask pattern shape does not locally become a complex polygon as in the prior art, and the mask pattern drawing data amount is reduced, and the mask drawing load is reduced accordingly. Effective in reducing the load of mask defect inspection.

  Further, in this method, for a relatively large pattern, the amount of change per stage is small and dimensional correction is performed in stages. A sudden change in a step produces a dimensional change in the vicinity of the step. In order to obtain a desired dimensional accuracy, it is necessary to reduce the dimensional change, and therefore it is necessary to reduce the calculation mesh interval. This method of changing dimensions in stages and obtaining desired dimensional accuracy without particularly reducing the calculation mesh interval can reduce the amount of calculation and data compared to the conventional method, and is effective as a mask pattern data creation method.

  In addition, according to this method, the mask pattern after flare correction is locally symmetrical, and is free from the problem of displacement of the pattern centroid position, that is, the positional deviation associated with the mask pattern correction method.

Embodiment 2. FIG.
In the present embodiment, for example, a mask pattern is created on an exposure mask for EUV lithography using the mask pattern data creation method described in the first embodiment, and then a semiconductor wafer is fabricated using the created mask pattern. A semiconductor device is manufactured by exposure. This method is particularly preferably applied to the gate layer, hole layer, wiring layer, and diffusion layer (active layer) of the MOSFET.

  As described above, in this embodiment, compared with the conventional method, this method is simple in mask data processing, is high-speed, has a compact mask pattern data amount, and facilitates mask pattern defect inspection. Further, in the manufactured semiconductor device, desired dimensional accuracy is obtained, the problem of pattern positional deviation does not occur, and the pattern defect caused by the mask does not occur. Such high-speed generation of mask pattern data is extremely effective in reducing the turnaround time (TAT) from pattern design to semiconductor device manufacturing, and can shorten the time to market of manufactured semiconductor devices. The added value of the device can be increased.

  The present invention is extremely useful industrially in that a semiconductor device including a fine and highly accurate pattern can be manufactured with high production efficiency.

It is a flowchart which shows an example of the mask pattern data creation method concerning this invention. It is explanatory drawing which showed the calculation concept of the conventional flare correction. It is a top view which shows an example of the mask pattern shape produced | generated by the conventional method. It is a top view which shows the other example of the mask pattern shape produced | generated by the conventional method. It is a top view which shows the other example of the mask pattern shape produced | generated by the conventional method. It is explanatory drawing of the division division of the calculation mesh and calculation area which concerns on this invention. It is a top view which shows an example of the mask pattern shape produced | generated by this invention. It is a top view which shows the other example of the mask pattern shape produced | generated by this invention. It is a top view which shows the other example of the mask pattern shape produced | generated by this invention. It is a top view which shows the other example of the mask pattern shape produced | generated by this invention. It is a top view which shows the other example of the mask pattern shape produced | generated by this invention.

Explanation of symbols

101 computational mesh,
201-205, 210, 220 Design mask pattern,
201a to 205a, 210a, 220a mask patterns after correction,
221 to 223 design mask patterns,
221b to 223b mask pattern after correction,
301-311, 401 Design mask pattern,
301b-311b, 401b mask pattern after correction,
A _1,1 , A _1,2 , A _2,1 , A _2,2 mesh region,
a _1,1 , a ₁ , ₂ , mesh internal region,
b _1,1 , b _1,2 , c _1,1 , c _1,2 , mesh boundary region,
d _1,1 , d _1,2 mesh boundary region.

Claims (3)

Mask pattern data for creating mask pattern data that corrects the pattern on the mask so that the desired pattern is projected and exposed when the pattern on the mask is projected and exposed onto the wafer via the projection optical system. In the method
Dividing the exposure area into a plurality of calculation mesh areas in order to perform the correction;
Calculating the amount of light coming from the surrounding area on each calculation mesh area;
A step of performing mask pattern dimension correction in accordance with the amount of light coming from the peripheral area in each mesh area,
With respect to the pattern intersecting with the grid defining the boundary of the calculation mesh region, a step of calculating a correction exposure amount corresponding to a simple average of exposure amount correction of each calculation mesh region in contact with the grid;
And a step of performing mask pattern dimension correction on the pattern in accordance with the calculated exposure correction amount. Mask pattern data for creating mask pattern data that corrects the pattern on the mask so that the desired pattern is projected and exposed when the pattern on the mask is projected and exposed onto the wafer via the projection optical system. In the method
Dividing the exposure area into a plurality of calculation mesh areas in order to perform the correction;
Setting a mesh boundary region having a predetermined width W around the boundary of the calculation mesh region, and a mesh internal region located outside the mesh boundary region;
Calculating the amount of light coming from the surrounding area on each calculation mesh area;
A step of performing mask pattern dimension correction in accordance with the amount of light coming from the peripheral area in each mesh area,
For a pattern that intersects with the grid that defines the boundary of the calculation mesh region and that crosses the mesh boundary region and extends to other regions, the pattern is divided for each mesh boundary region A and mesh internal region B that crosses the pattern. A process of dividing
A step of calculating a corrected exposure amount corresponding to a simple average of exposure amount correction of each calculation region in contact with the grid with respect to the mesh boundary region A;
Calculating a corrected exposure amount in a calculation mesh region to which the region B belongs, for the mesh inner region B;
A mask pattern data creation method comprising: performing mask pattern dimension correction for each divided pattern in accordance with the calculated exposure correction amount. A step of creating a mask pattern using the mask pattern data creation method according to claim 1,
And a step of exposing the semiconductor wafer using the created mask pattern.