JP2009164849A - Ｍｅｍｓトランスデューサおよびその製造方法 - Google Patents

Ｍｅｍｓトランスデューサおよびその製造方法 Download PDF

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Publication number
JP2009164849A
JP2009164849A JP2007341426A JP2007341426A JP2009164849A JP 2009164849 A JP2009164849 A JP 2009164849A JP 2007341426 A JP2007341426 A JP 2007341426A JP 2007341426 A JP2007341426 A JP 2007341426A JP 2009164849 A JP2009164849 A JP 2009164849A
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JP
Japan
Prior art keywords
film
diaphragm
plate
substrate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007341426A
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English (en)
Japanese (ja)
Inventor
Yukitoshi Suzuki
幸俊 鈴木
Tamito Suzuki
民人 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yamaha Corp
Original Assignee
Yamaha Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamaha Corp filed Critical Yamaha Corp
Priority to JP2007341426A priority Critical patent/JP2009164849A/ja
Priority to US12/317,692 priority patent/US7888754B2/en
Priority to CNA200810188488XA priority patent/CN101468785A/zh
Publication of JP2009164849A publication Critical patent/JP2009164849A/ja
Pending legal-status Critical Current

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  • Pressure Sensors (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
JP2007341426A 2007-12-28 2007-12-28 Ｍｅｍｓトランスデューサおよびその製造方法 Pending JP2009164849A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007341426A JP2009164849A (ja) 2007-12-28 2007-12-28 Ｍｅｍｓトランスデューサおよびその製造方法
US12/317,692 US7888754B2 (en) 2007-12-28 2008-12-23 MEMS transducer
CNA200810188488XA CN101468785A (zh) 2007-12-28 2008-12-26 微机电系统换能器和其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007341426A JP2009164849A (ja) 2007-12-28 2007-12-28 Ｍｅｍｓトランスデューサおよびその製造方法

Publications (1)

Publication Number Publication Date
JP2009164849A true JP2009164849A (ja) 2009-07-23

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ID=40826641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007341426A Pending JP2009164849A (ja) 2007-12-28 2007-12-28 Ｍｅｍｓトランスデューサおよびその製造方法

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JP (1) JP2009164849A (zh)
CN (1) CN101468785A (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101118624B1 (ko) 2011-05-12 2012-03-06 한국기계연구원 Ｍｅｍｓ 마이크로폰 패키지 및 제조방법
KR101118627B1 (ko) * 2011-05-12 2012-03-06 한국기계연구원 Ｍｅｍｓ 마이크로폰 및 제조방법
CN108282731A (zh) * 2018-03-07 2018-07-13 钰太芯微电子科技（上海）有限公司 一种声学传感器及微机电麦克风封装结构

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITTO20110881A1 (it) * 2011-10-03 2013-04-04 Milano Politecnico Sensore microelettromeccanico con massa di rilevamento non conduttiva e metodo di rilevamento mediante un sensore microelettromeccanico
TWI528520B (zh) * 2013-03-19 2016-04-01 財團法人工業技術研究院 壓力感測器及其製造方法
CN111107473B (zh) * 2019-12-13 2022-02-25 潍坊歌尔微电子有限公司 Mic和压力传感器的集成结构与方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006229901A (ja) * 2005-02-21 2006-08-31 Denso Corp 超音波素子
JP2007127440A (ja) * 2005-11-01 2007-05-24 Alps Electric Co Ltd 静電容量型圧力センサ
JP2007203420A (ja) * 2006-02-03 2007-08-16 Hitachi Ltd Ｍｅｍｓ構造体およびその製造方法、並びにｍｅｍｓ構造体混載半導体装置の製造方法
JP2007216309A (ja) * 2006-02-14 2007-08-30 Seiko Epson Corp 電子装置及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006229901A (ja) * 2005-02-21 2006-08-31 Denso Corp 超音波素子
JP2007127440A (ja) * 2005-11-01 2007-05-24 Alps Electric Co Ltd 静電容量型圧力センサ
JP2007203420A (ja) * 2006-02-03 2007-08-16 Hitachi Ltd Ｍｅｍｓ構造体およびその製造方法、並びにｍｅｍｓ構造体混載半導体装置の製造方法
JP2007216309A (ja) * 2006-02-14 2007-08-30 Seiko Epson Corp 電子装置及びその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101118624B1 (ko) 2011-05-12 2012-03-06 한국기계연구원 Ｍｅｍｓ 마이크로폰 패키지 및 제조방법
KR101118627B1 (ko) * 2011-05-12 2012-03-06 한국기계연구원 Ｍｅｍｓ 마이크로폰 및 제조방법
CN108282731A (zh) * 2018-03-07 2018-07-13 钰太芯微电子科技（上海）有限公司 一种声学传感器及微机电麦克风封装结构
CN108282731B (zh) * 2018-03-07 2024-01-16 钰太芯微电子科技（上海）有限公司 一种声学传感器及微机电麦克风封装结构

Also Published As

Publication number Publication date
CN101468785A (zh) 2009-07-01

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