JP2009164328A - Metallized film capacitor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To suppress a decrease in capacity of a metallized film capacitor, used for an automobile, and the like, due to a dielectric breakdown. <P>SOLUTION: An element wound with a pair of metallized films, each having an insulating margin 3 at one end and having divided electrodes 6 and a non-divided electrode 2 formed, is provided with a low-resistance portion 8 at the end of the non-divided electrode 2 in a direction opposite to the insulating margin 3. A plurality of segments are formed as the divided electrodes 6 by length-direction slits 4 and width-direction slits 5, and segments positioned on the side of the insulating margin 3 have a larger width than other segments. Consequently, even when a withstand-voltage weak point part is broken down and becomes a reactive electrode portion, the area of a segment at the breakdown-voltage weak point part is made smaller than that of other segments and then the area of the reactive electrode portion becomes small, so that the decrease in capacity of the product can be suppressed, as a result. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a metallized film capacitor that is used in various electronic devices, electrical devices, industrial devices, automobiles, and the like, and is particularly suitable for smoothing, filtering, and snubbing of a motor drive inverter circuit of a hybrid vehicle.

  In recent years, from the viewpoint of environmental protection, all electrical devices are controlled by inverter circuits, and energy saving and high efficiency are being promoted. In particular, in the automobile industry, hybrid vehicles (hereinafter referred to as HEVs) that run on electric motors and engines have been introduced into the market, and the development of technologies relating to energy saving and high efficiency has been activated, which is friendly to the global environment.

  Since such a HEV electric motor has a high operating voltage range of several hundred volts, a metallized film capacitor having high withstand voltage and low loss electric characteristics as a capacitor used in connection with such an electric motor. In addition, the trend of adopting metalized film capacitors with a very long life is conspicuous due to the demand for maintenance-free in the market.

  Such metallized film capacitors are roughly classified into those generally using a metal foil as an electrode and those using a deposited metal provided on a dielectric film as an electrode. Among these, metallized film capacitors that use vapor-deposited metal as an electrode (hereinafter referred to as metal vapor-deposited electrode) have a smaller volume occupied by the electrode compared to that of metal foil and can be reduced in size and weight. High reliability in dielectric breakdown due to recovery function (capacity of metal evaporated electrode around the defective part evaporates and scatters and insulates when the short-circuit occurs in the defective part) Therefore, it has been widely used conventionally.

  FIG. 18 is a cross-sectional view showing the structure of this type of conventional metallized film capacitor, and FIGS. 19A and 19B are plan views showing the structure of a pair of metallized films used in the metallized film capacitor. In FIGS. 18 and 19, reference numerals 11a and 11b denote metal vapor-deposited electrodes, and these metal vapor-deposited electrodes 11a and 11b comprise one metallized film and the other metal constituting a wound metallized film capacitor. Formed by vapor-depositing aluminum metal on one side of the dielectric film 10a, 10b of the insulating film except for the insulation margins 12a, 12b at one end, and the electrodes are drawn out through the metallicons 18a, 18b at both end faces. It is what.

  Further, the metal vapor deposition electrodes 11a and 11b are non-vapor deposition electrodes that do not have metal vapor deposition electrodes formed by oil transfer on the side from the substantially central portion of the width W of the effective electrode portion forming the capacitance toward the insulation margins 12a and 12b. The slits 13a, 13b in the longitudinal direction and the slits 14a, 14b in the same width direction are divided into a plurality of grid-like divided electrodes 15a, 15b, respectively, and are connected in parallel by fuses 16a, 16b. Fuses 16a and 16b are applied to metal vapor-deposited electrodes 11a and 11b deposited on the entire surface of the dielectric films 10a and 10b located on the opposite side of the insulation margins 12a and 12b from the substantially central portion of the width W on the side close to the metallicons 18a and 18b. Are connected in parallel.

  The metal vapor deposition electrodes 11a and 11b have a low resistance by reducing the thickness of the metal vapor deposition electrodes 11a and 11b having the width W of the effective electrode portion forming the capacitance and increasing the thickness of the portions connected to the metallicons 18a and 18b. A heavy edge structure provided with portions 17a and 17b is formed.

  The conventional metallized film capacitor configured as described above can realize a metallized film capacitor having a self-security function and generating less heat by the fuses 16a and 16b. That is, the current passed through the metal vapor-deposited electrodes 11a and 11b increases as it approaches the metallicons 18a and 18b, and decreases as it moves away. Therefore, the metal deposition electrodes 11a and 11b on the side close to the metallicons 18a and 18b are deposited on the entire surface of the dielectric films 10a and 10b corresponding to the magnitude of the flowing current, and at positions away from the metallicons 18a and 18b. Since the fuses 16a and 16b and the grid-like divided electrodes 15a and 15b are provided on the side closer to the insulation margins 12a and 12b where the flowing current decreases, the heat generated in the fuses 16a and 16b due to the flowing current can be reduced, and the temperature rises. It was to be able to suppress.

As prior art document information related to the invention of this application, for example, Patent Document 1 is known.
JP 2004-134561 A

  However, in the conventional metallized film capacitor, a high withstand voltage of 1400 V is required from the conventional withstand voltage of about 900 to 1000 V, and a pair of metallized films are overlapped with such a high withstand voltage. Low resistance portions 17a and 17b formed by increasing the thickness of the metal vapor-deposited electrodes 11a and 11b connected to the metallicons 18a and 18b at each end in the film width direction because of the structure wound together. Since the low resistance portions 17a and 17b are thick, the self-healing energy is large. For this reason, the low resistance portions 17a and 17b are overlapped with the low resistance portions 17a and 17b via the dielectric films 10a and 10b. The grid-like divided electrodes 15a and 15b formed on the metallized film are in a state in which dielectric breakdown is likely to occur, that is, a so-called pressure-resistant weak spot When this breakdown voltage weak point causes dielectric breakdown, a large short-circuit current flows, and the surrounding metal vapor deposition electrodes 11a and 11b are evaporated and scattered to insulate them. 15b is no longer an effective electrode part, and as a result, the capacity of the metallized film capacitor is significantly reduced.

  Further, among the grid-like divided electrodes 15a and 15b, those located in the central portion in the film width direction are also susceptible to dielectric breakdown due to the pressure stress of the pattern roll when forming the metal vapor deposition electrode, so-called breakdown voltage weak points. Such a pressure-resistant weak point has a similar problem.

  An object of the present invention is to solve such a conventional problem and to provide a high performance metallized film capacitor capable of suppressing a decrease in capacity even when dielectric breakdown occurs.

  In order to solve the above-mentioned problems, the present invention provides a pair of metallized films provided with an insulating margin on one end side and formed with divided electrodes and non-divided electrodes, and one non-divided electrode is divided into the other through a dielectric film. The device is composed of an element wound in an overlapped manner so as to face the electrode, and a metallicon electrode formed on both end faces of the element, and a low resistance portion is provided at the end of the non-divided electrode in the direction opposite to the insulation margin. A plurality of segments are formed by providing at least two or more vertical margins and a plurality of horizontal margins as the divided electrodes, and of these segments, the width dimension in the film width direction of the segment located on the insulating margin side Is made narrower than the same width dimension of the other segments.

  As described above, the metallized film capacitor according to the present invention has a structure in which the width dimension in the film width direction of the segment located on the insulation margin side is narrower than the same width dimension of the other segments, and the breakdown voltage weak point portion causes dielectric breakdown. Even if a large short-circuit current flows and the segment of this broken part becomes the invalid electrode part, the area of the segment that becomes the breakdown voltage weak point part is made smaller than the area of the other segments. As a result, the reduction in the capacity of the product can be suppressed.

(Embodiment 1)
Hereinafter, the first aspect of the present invention will be described with reference to the first, fourth, fifth, and seventh aspects of the present invention.

  FIGS. 1A and 1B are a plan view and a cross-sectional view showing a state in which a pair of metallized films used in the metallized film capacitor according to Embodiment 1 of the present invention are overlaid, and FIGS. b) is a plan view and a cross-sectional view of the metallized film disposed on the upper side in FIG. 1, and FIGS. 3A and 3B are a plan view and a cross-sectional view of the metallized film disposed on the lower side in FIG. Yes, the metallized film shown in FIG. 2 and FIG. 3 is in a state where the same film is rotated 180 degrees.

  1-3, 1 is a dielectric film made of polypropylene or the like, 2 is a non-divided film formed by vapor-depositing aluminum metal on one side of the dielectric film 1 except for an insulation margin 3 at one end. It is a metal vapor deposition electrode, and the end surface opposite to the insulation margin 3 is an electrode lead-out portion.

  The metal vapor deposition electrode 2 is a non-deposition longitudinal direction that does not have a metal vapor deposition electrode formed by oil transfer on the side from the substantially central part of the width W of the effective electrode part forming the capacitance toward the insulation margin 3. The slits 4 and the slits 5 in the width direction are provided so as to be divided into divided electrodes 6 made up of a plurality of grid-like segments, and the divided electrodes 6 are connected via the fuses 7 provided in the slits 4 in the longitudinal direction. In addition, each of the divided electrodes 6 has a width dimension W1 in the film width direction of the divided electrode 6 positioned on the insulating margin 3 side. The divided electrode 6 is configured to be narrower than the same width dimension W2.

  Reference numeral 8 denotes a low resistance portion provided in an electrode lead portion opposite to the insulation margin 3, and the low resistance portion 8 is a metal vapor deposition film having a thickness larger than that of the metal vapor deposition film of the metal vapor deposition electrode 2 and the divided electrode 6. It is comprised by forming.

  Then, the metallized film thus configured is paired, and as shown in FIG. 1, the metal vapor deposition electrode 2, which is a non-divided electrode formed on one metallized film, is connected to the other via the dielectric film 1. A metallized film capacitor according to the present embodiment is formed by overlapping and winding the divided electrodes 6 formed on the metallized film so as to face each other and forming take-out electrodes (not shown) on both end surfaces. It is.

  FIG. 4 and FIG. 4 show the results of a withstand voltage test and a high temperature endurance test performed to confirm the capacity reduction rate of the metalized film capacitor according to this embodiment configured as described above in comparison with the conventional product as a comparative example. As shown in FIG. In addition, the product of 750V-100μF is used for the test, the withstand voltage test is measured by applying 800V / 1 minute, 1200V / 1 minute, 1500V / 1 minute (each at RT), and the high temperature durability test is performed. Measured by continuously applying 750 V at 100 ° C.

  As is apparent from FIGS. 4 and 5, the metallized film capacitor according to the present embodiment has a small capacity reduction rate even in the withstand voltage test and the high temperature endurance test, and can exhibit excellent reliability. It is.

  As described above, the metallized film capacitor according to the present embodiment has a conventional pressure-resistant weak point portion, that is, the low resistance portion has a large self-healing energy. Therefore, the low resistance portion overlaps with the dielectric film through the dielectric film. In order to solve the problem that the divided electrode formed on the metallized film is a so-called breakdown voltage weakened portion that is liable to cause dielectric breakdown, the width dimension W1 in the film width direction of the divided electrode 6 located on the insulating margin 3 side is changed to another division. With the configuration in which the width 6 of the electrode 6 is narrower than the same width dimension W2, the breakdown voltage weak point portion causes a dielectric breakdown, and a large short-circuit current flows. Since the area is made smaller than the area of the other divided electrode 6, the area that becomes the ineffective electrode portion can be reduced, and as a result, the capacity reduction as a product is suppressed. It is intended to achieve the significant effect that it is.

  In order to efficiently obtain such an effect, the width dimension W1 in the film width direction of the divided electrode 6 positioned on the insulating margin 3 side is set to be the same as that of the low resistance portion 8 formed on the other metallized film that overlaps. Since the width dimension W1 may be substantially the same as the width, the ratio of the width dimension W1 in the film width direction of the divided electrode 6 positioned on the insulating margin 3 side to be narrower than the same width dimension W2 of the other divided electrodes 6 is 1 It can be said that the range of / 2 to 1/5 is preferable.

(Embodiment 2)
The second aspect of the present invention will be described below with reference to the second embodiment.

  In the present embodiment, the configuration of the metallized film used in the metallized film capacitor described in the first embodiment with reference to FIGS. 1 to 3 is partially different, and the other configurations Since this is the same as that of the first embodiment, the same reference numerals are given to the same parts and the detailed description thereof is omitted, and only different parts will be described in detail below with reference to the drawings.

  6 (a) and 6 (b) are a plan view and a cross-sectional view showing a state in which a pair of metallized films used in the metallized film capacitor according to the second embodiment of the present invention are overlaid, and FIGS. b) is a plan view and a cross-sectional view of the metallized film disposed on the upper side in FIG. 6, and FIGS. 8A and 8B are a plan view and a cross-sectional view of the metallized film disposed on the lower side in FIG. Yes, the metallized film shown in FIG. 7 and FIG. 8 is in a state where the same film is rotated 180 degrees.

  6 to 8, 1 is a dielectric film, 2 is a non-divided metal deposition electrode, 3 is an insulation margin, 4 is a slit in the longitudinal direction, 5 is a slit in the width direction, and 6 is the slit 4 in the longitudinal direction. A divided electrode composed of a plurality of grid-like segments formed by the slit 5 in the width direction, 7 is a fuse provided in the slit 4 in the longitudinal direction, and 8 is a low resistance portion.

  The divided electrode 6 is configured such that the width dimension W1 in the film width direction of the divided electrode 6 located on the non-divided metal vapor deposition electrode 2 side is narrower than the same width dimension W2 of the other divided electrodes 6. is there.

  The metallized film capacitor according to the present embodiment configured as described above is a pattern roll at the time of forming a metal vapor-deposited electrode, in which the divided electrode located at the pressure-resistant weak point, that is, the central part in the film width direction, has been a conventional problem. In order to solve the problem that the dielectric breakdown is likely to occur due to the pressing stress of the so-called breakdown voltage weak point portion, the width dimension W1 in the film width direction of the divided electrode 6 positioned on the non-divided metal vapor deposition electrode 2 side is set to the other divided electrode 6. With the configuration narrower than the width dimension W2, the breakdown voltage weak point portion causes dielectric breakdown and a large short-circuit current flows, and even if the broken electrode 6 becomes an invalid electrode portion, the area of this portion is different from that of the other portion. Since the area of the divided electrode 6 is smaller than that of the divided electrode 6, the area that becomes the ineffective electrode portion can be reduced. As a result, it is possible to suppress a decrease in capacity as a product. It is intended to achieve the particular effect that kill.

  In order to efficiently obtain such an effect, the width dimension W1 in the film width direction of the divided electrode 6 positioned on the non-divided metal vapor deposition electrode 2 side is set to be the same in the film width direction of the other divided electrodes 6. The ratio of narrower than the width dimension W2 is preferably in the range of 1/2 to 1/5, as in the first embodiment.

(Embodiment 3)
The third embodiment of the present invention will be described below in particular.

  In the present embodiment, the configuration of the metallized film used in the metallized film capacitor described in the first embodiment with reference to FIGS. 1 to 3 is partially different, and the other configurations Since this is the same as that of the first embodiment, the same reference numerals are given to the same parts and the detailed description thereof is omitted, and only different parts will be described in detail below with reference to the drawings.

  9 (a) and 9 (b) are a plan view and a cross-sectional view of a state in which a pair of metallized films used in the metallized film capacitor according to Embodiment 3 of the present invention are overlaid, and FIGS. b) is a plan view and a sectional view of the metallized film disposed on the upper side in FIG. 9, and FIGS. 11 (a) and 11 (b) are a plan view and a sectional view of the metallized film disposed on the lower side in FIG. Yes, the metallized film shown in FIG. 10 and FIG.

  9 to 11, 1 is a dielectric film, 2 is a non-divided metal deposition electrode, 3 is an insulation margin, 4 is a slit in the longitudinal direction, 5 is a slit in the width direction, and 6 is the slit 4 in the longitudinal direction. A divided electrode composed of a plurality of grid-like segments formed by the slit 5 in the width direction, 7 is a fuse provided in the slit 4 in the longitudinal direction, and 8 is a low resistance portion.

  The divided electrode 6 has a width dimension W1 in the film width direction of the divided electrode 6 located on the insulating margin 3 side and a width dimension W1 in the film width direction of the divided electrode 6 located on the non-divided metal vapor deposition electrode 2 side. The other divided electrodes 6 are configured to be narrower than the same width dimension W2.

  The metallized film capacitor according to the present embodiment configured as described above has a self-healing energy that is high in the withstand voltage weak point portion, that is, the low resistance portion, which has been a conventional problem. The split electrode formed on the metallized film on the overlapping side is prone to dielectric breakdown, so-called pressure-resistant weak point part, and the split electrode located in the central part in the film width direction is the pattern when forming the metal vapor deposition electrode The width dimension W1 in the film width direction of the divided electrode 6 located on the insulating margin 3 side, and the non-divided metal for each problem that the dielectric breakdown is likely to occur due to the pressing stress of the roll, that is, the so-called breakdown voltage weak point portion. The width dimension W1 in the film width direction of the divided electrode 6 positioned on the vapor deposition electrode 2 side is narrower than the same width dimension W2 of the other divided electrodes 6. With this structure, even if the breakdown voltage weak point portion causes a dielectric breakdown and a large short-circuit current flows, and the divided electrode 6 in the broken portion becomes an ineffective electrode portion, the area of this portion is smaller than the area of the other divided electrodes 6. Therefore, the area that becomes the ineffective electrode portion can be reduced. As a result, it is possible to suppress the decrease in the capacity of the product.

  In order to efficiently obtain such an effect, the width W1 in the film width direction of the divided electrode 6 located on the insulating margin 3 side and the divided electrode 6 located on the non-divided metal vapor deposition electrode 2 side are provided. The ratio of making the width dimension W1 in the film width direction narrower than the same width dimension W2 in the film width direction of the other divided electrodes 6 is 1/2 to 1/5 as in the first and second embodiments. A range is preferred.

  FIGS. 12 to 14 show a structure in which the divided electrodes formed on the metallized film according to the present embodiment shown in FIGS. 9 to 11 have a three-part structure. 11 is the same as that described in FIG.

(Embodiment 4)
Hereinafter, the invention described in claim 6 of the present invention will be described using the fourth embodiment.

  In the present embodiment, the configuration of the metallized film used in the metallized film capacitor described in the third embodiment with reference to FIGS. 9 to 11 is partially different, and the other configurations Since this is the same as that of the third embodiment, the same reference numerals are given to the same parts and the detailed description thereof is omitted, and only different parts will be described in detail with reference to the drawings.

  15 (a) and 15 (b) are a plan view and a cross-sectional view showing a state in which a pair of metallized films used in the metallized film capacitor according to Embodiment 4 of the present invention are overlaid, and FIGS. b) is a plan view and a sectional view of the metallized film disposed on the upper side in FIG. 15, and FIGS. 17A and 17B are a plan view and a sectional view of the metallized film disposed on the lower side in FIG. Yes, the metallized film shown in FIG. 16 and FIG. 17 is in a state where the same film is rotated 180 degrees.

  15 to 17, 1 is a dielectric film, 2 is a non-divided metal deposition electrode, 3 is an insulation margin, 4 is a slit in the longitudinal direction, 5 is a slit in the width direction, and 6 is the slit 4 in the longitudinal direction. Divided electrodes composed of a plurality of grid-like segments formed by the slits 5 in the width direction, 7 is a fuse provided in the slit 4 in the longitudinal direction, 8 is a low resistance portion, and 9 is provided in the slit 5 in the width direction. It is a fuse.

  The divided electrode 6 has a width dimension W1 in the film width direction of the divided electrode 6 located on the insulating margin 3 side and a width dimension W1 in the film width direction of the divided electrode 6 located on the non-divided metal vapor deposition electrode 2 side. The other divided electrodes 6 are configured to be narrower than the same width dimension W2.

  The metallized film capacitor according to the present embodiment configured as described above has a current path due to the configuration in which the fuse 9 is provided in the slit 5 in the width direction in addition to the effect obtained by the metalized film capacitor according to the third embodiment. As a result, the loss can be reduced and the special effect is achieved.

  The divided electrode 6 formed on the metallized film used in the metallized film capacitor in the first to fourth embodiments of the present invention has a plurality of lattice-like shapes formed by the slits 4 in the longitudinal direction and the slits 5 in the width direction. Although the segmented electrode 6 made of segments has been described as an example, the present invention is not limited to this, and the shape of the segments may be slanted or rhombus-like. Even in the case of a segmented electrode composed of segmented segments, by making the width dimension in the film width direction of the segment located on the insulating margin side and / or the segment located on the non-divided electrode side narrower than the same width dimension of other segments The effect by this invention is acquired similarly.

  The metallized film capacitor according to the present invention has an effect that the reduction in capacitance can be reduced, and is useful as a capacitor in the field of automobiles and the like particularly requiring high reliability.

(A) The top view of the state which piled up the pair of metallized film used for the metallized film capacitor by Embodiment 1 of this invention, (b) The sectional drawing (A) The top view of the metallized film arrange | positioned above in FIG. 1, (b) The same sectional view (A) The top view of the metallized film arrange | positioned below in FIG. 1, (b) The same sectional view The characteristic figure which showed the withstand voltage test result of the metallized film capacitor by this embodiment Characteristic diagram showing the same high temperature durability test results (A) The top view of the state which piled up the pair of metallized film used for the metallized film capacitor by Embodiment 2 of this invention, (b) The sectional drawing (A) The top view of the metallized film arrange | positioned above in FIG. 6, (b) The sectional drawing (A) The top view of the metallized film arrange | positioned below in FIG. 6, (b) The sectional drawing (A) The top view of the state which piled up the pair of metallized film used for the metallized film capacitor by Embodiment 3 of this invention, (b) The sectional drawing (A) The top view of the metallized film arrange | positioned above in FIG. 9, (b) The same sectional view (A) The top view of the metallized film arrange | positioned below in FIG. 9, (b) The sectional drawing (A) The top view of the state which piled up the pair of metallized film used for the other example of the metallized film capacitor by Embodiment 3 of this invention, (b) The sectional drawing (A) The top view of the metallized film arrange | positioned above in FIG. 12, (b) The sectional drawing (A) The top view of the metallized film arrange | positioned below in FIG. 12, (b) The sectional drawing (A) The top view of the state which piled up the pair of metallized film used for the metallized film capacitor by Embodiment 4 of this invention, (b) The sectional drawing (A) The top view of the metallized film arrange | positioned above in FIG. 15, (b) The sectional drawing (A) The top view of the metallized film arrange | positioned below in FIG. 15, (b) The sectional drawing Sectional view showing the structure of a conventional metallized film capacitor (A), (b) The top view which showed the structure of a pair of metallized film used for the metallized film capacitor

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Dielectric film 2 Metal vapor deposition electrode 3 Insulation margin 4 Slit in the longitudinal direction 5 Slit in the width direction 6 Divided electrodes 7, 9 Fuse 8 Low resistance portion

Claims (7)

An insulating margin consisting of a non-metal vapor deposition portion is provided on one end side in the width direction of the dielectric film, and an effective electrode portion other than this insulating margin is provided, and a slit consisting of a non-metal vapor deposition portion is provided at a substantially central portion of the effective electrode portion, A split electrode is formed on the side from the slit toward the insulating margin, a non-divided electrode is formed on the side facing the insulating margin from the slit, and the divided electrode and the non-divided electrode are provided on the slit. A pair of metallized films on which metal vapor-deposited electrodes connected with each other are formed, and a non-divided electrode formed on one metallized film is opposed to a divided electrode formed on the other metallized film via a dielectric film. And a metallized film capacitor comprising a pair of metallicon electrodes formed by metal spraying on both end faces of the element. In addition, a low resistance portion is provided at the end of the non-divided electrode in the direction opposite to the insulating margin, and at least two vertical margins made of a non-metal vapor deposited portion and a plurality of horizontal margins are provided as the divided electrodes. A metallized film capacitor in which a plurality of segments are formed, and a width dimension of the segment located on the insulating margin side in the film width direction is narrower than that of the other segments. An insulating margin consisting of a non-metal vapor deposition portion is provided on one end side in the width direction of the dielectric film, and an effective electrode portion other than this insulating margin is provided, and a slit consisting of a non-metal vapor deposition portion is provided at a substantially central portion of the effective electrode portion, A split electrode is formed on the side from the slit toward the insulating margin, a non-divided electrode is formed on the side facing the insulating margin from the slit, and the divided electrode and the non-divided electrode are provided on the slit. A pair of metallized films on which metal vapor-deposited electrodes connected with each other are formed, and a non-divided electrode formed on one metallized film is opposed to a divided electrode formed on the other metallized film via a dielectric film. And a metallized film capacitor comprising a pair of metallicon electrodes formed by metal spraying on both end faces of the element. In addition, a low resistance portion is provided at the end of the non-divided electrode in the direction opposite to the insulating margin, and at least two vertical margins made of a non-metal vapor deposited portion and a plurality of horizontal margins are provided as the divided electrodes. A metallized film capacitor in which a plurality of segments are formed by providing, and a width dimension in the film width direction of the segment located on the non-divided electrode side is narrower than the same width dimension of other segments. An insulating margin consisting of a non-metal vapor deposition portion is provided on one end side in the width direction of the dielectric film, and an effective electrode portion other than this insulating margin is provided, and a slit consisting of a non-metal vapor deposition portion is provided at a substantially central portion of the effective electrode portion, A split electrode is formed on the side from the slit toward the insulating margin, a non-divided electrode is formed on the side facing the insulating margin from the slit, and the divided electrode and the non-divided electrode are provided on the slit. A pair of metallized films on which metal vapor-deposited electrodes connected with each other are formed, and a non-divided electrode formed on one metallized film is opposed to a divided electrode formed on the other metallized film via a dielectric film. And a metallized film capacitor comprising a pair of metallicon electrodes formed by metal spraying on both end faces of the element. In addition, a low resistance portion is provided at the end of the non-divided electrode in the direction opposite to the insulating margin, and at least two vertical margins made of a non-metal vapor deposited portion and a plurality of horizontal margins are provided as the divided electrodes. A plurality of segments are formed by providing, and among these segments, the width dimension in the film width direction of the segment located on the insulating margin side and the segment located on the non-divided electrode side is larger than the same width dimension of other segments. Narrow metallized film capacitor. The ratio in which the width dimension in the film width direction of the segment located on the insulating margin side and / or the segment located on the non-divided electrode side is narrower than the same width dimension of other segments is set to 1/2 to 1/5. Item 4. The metallized film capacitor according to any one of Items 1 to 3. The divided electrode composed of a plurality of segments formed by providing at least two or more vertical margins made of a non-metal vapor deposition portion and a plurality of horizontal margins is formed in a lattice shape. The metallized film capacitor according to any one of the above. The metallized film capacitor according to any one of claims 1 to 3, wherein a fuse is provided in at least a part of a lateral margin constituting the divided electrode. The metallized film capacitor according to claim 1, wherein a polypropylene film is used as a dielectric film constituting the metallized film.

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