JP2009158868A - Electronic circuit device and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a reliable electronic circuit device which has an electronic component surely mounted on a wiring board by electrically connecting the electronic component to the wiring board without exposure to high temperature, and electronic equipment equipped with the electronic circuit device. <P>SOLUTION: The electronic circuit device 10 has a substrate 1, the wiring board 7 which has a wiring pattern 2 patterned in a predetermined shape and having terminals, and a chip capacitor 6 having electrodes 5 provided on both end sides of a body portion 4, and the electrodes 5 area electrically connected to the terminals through conductive junction films 3. The junction films 3 contain metal atoms, oxygen atoms bonded to the metal atoms, and free radicals bonded to at least the metal atoms or oxygen atoms. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an electronic circuit device and an electronic apparatus.

As a method of mounting a chip type electronic component (chip component) such as a chip capacitor or a chip resistor on a printed wiring board (wiring board) on which a wiring pattern is formed, one of terminals (electrodes) and a conductor pattern included in the electronic component is provided. A surface mounting technology (SMT (Surface Mount Technology)) that joins terminals provided in a portion is known.
In such surface mounting technology, solder reflow processing is widely used for bonding between terminals. More specifically, for example, the chip component is placed on the printed wiring board via a solder ball between a terminal included in the printed wiring board and a terminal included in the chip component. Then, these are heated to melt the solder, and then re-solidified, whereby the printed wiring board and the chip component are electrically joined between the terminals.

  In the solder reflow processing for melting and solidifying the solder as described above, lead-free solder has been used in recent years due to environmental problems. In order to melt such lead-free solder, the chip component is kept at a high temperature (260 ° C. Degree). As described above, when the chip component is exposed to such a high temperature, there is a problem that the chip component is cracked. In addition, as a method of electrically connecting the chip component to the wiring board, conductive bonding containing metal particles such as Ag paste that can be conducted and fixed at a lower temperature (about 150 ° C.) than the solder reflow process. There is an attempt to use an agent (for example, see Patent Document 1). However, such a conductive adhesive conducts by point contact of metal particles, and there is a problem that conductivity is high or conduction between terminals cannot be obtained without contact between metal particles. there were.

JP 2000-244105 A

  An object of the present invention is to provide a highly reliable electronic circuit device in which an electronic component is securely mounted on a wiring board by electrically joining the wiring board and the electronic component without being exposed to high temperatures, and the electronic An object of the present invention is to provide an electronic device including a circuit device.

Such an object is achieved by the following present invention.
An electronic circuit device of the present invention includes a wiring board having a flat base material, and an electrical wiring provided with a first terminal provided on one surface side of the base material and patterned into a predetermined shape;
An electronic component having a second terminal,
The electronic component is fixed to the wiring substrate by bonding the first terminal and the second terminal with a conductive bonding film,
The bonding film includes a metal atom, an oxygen atom bonded to the metal atom, and a leaving group bonded to at least one of the metal atom and the oxygen atom,
The bonding film imparts energy to at least a part of the bonding film, so that the leaving group existing near the surface of the bonding film is released from at least one of the metal atom and the oxygen atom, and the bonding film The first terminal and the second terminal are bonded to each other by adhesiveness developed in the region on the surface of the film.
Accordingly, it is possible to provide an electronic circuit device having excellent reliability in which the wiring board and the electronic component are electrically joined without being exposed to a high temperature and the electronic component is reliably mounted on the wiring board.

An electronic circuit device of the present invention includes a wiring board having a flat base material, and an electrical wiring provided with a first terminal provided on one surface side of the base material and patterned into a predetermined shape;
An electronic component having a second terminal,
The first terminal is composed of a conductive bonding film, and the electronic component is fixed to the wiring board by bonding the first terminal to the second terminal.
The bonding film includes a metal atom, an oxygen atom bonded to the metal atom, and a leaving group bonded to at least one of the metal atom and the oxygen atom,
The bonding film imparts energy to at least a part of the bonding film, so that the leaving group existing near the surface of the bonding film is released from at least one of the metal atom and the oxygen atom, and the bonding film It is characterized by being bonded to the second terminal by the adhesiveness developed in the region on the surface of the film.
Accordingly, it is possible to provide an electronic circuit device having excellent reliability in which the wiring board and the electronic component are electrically joined without being exposed to a high temperature and the electronic component is reliably mounted on the wiring board.

In the electronic circuit device of the present invention, it is preferable that the electrical wiring is formed of a bonding film similar to the bonding film and is formed integrally with the first terminal.
Thereby, it is possible to integrally form the electric wiring and the bonding film in one process. Thereby, the productivity of the electronic circuit device can be increased.
In the electronic circuit device of the present invention, the metal atom is preferably at least one of indium, tin, zinc, titanium, and antimony.
By making the bonding film contain these metal atoms, the bonding film exhibits excellent conductivity and heat conductivity. As a result, the electronic circuit device can be driven at a lower voltage without inadvertent loss of current in the circuit.

In the electronic circuit device of the present invention, the leaving group is at least one of a hydrogen atom, a carbon atom, a nitrogen atom, a phosphorus atom, a sulfur atom and a halogen atom, or an atomic group composed of each of these atoms. Preferably there is.
These leaving groups are relatively excellent in binding / leaving selectivity by applying energy. For this reason, the leaving group which leaves | separates comparatively easily and uniformly by providing energy is obtained, and the adhesiveness of the bonding film can be further enhanced. As a result, the reliability of the obtained electronic circuit device can be further increased.

In the electronic circuit device of the present invention, the bonding film includes indium tin oxide (ITO), indium zinc oxide (IZO), antimony tin oxide (ATO), fluorine-containing indium tin oxide (FTO), zinc oxide ( It is preferable that a hydrogen atom is introduced as a leaving group into ZnO) or titanium dioxide (TiO ₂ ).
The bonding film having such a configuration itself has excellent mechanical characteristics. In addition, it exhibits particularly excellent adhesion to many materials. Therefore, by bonding such a bonding film particularly firmly to the terminals provided in the electronic component, the electronic component is more reliably fixed to the wiring board. Further, the bonding film having such a configuration has excellent conductivity and heat conductivity. As a result, the reliability of the manufactured electronic circuit device can be further increased.
In the electronic circuit device of the present invention, the abundance ratio of metal atoms and oxygen atoms in the bonding film is preferably 3: 7 to 7: 3.
As a result, the stability of the bonding film is increased, and the electronic component and the wiring board can be more firmly bonded via the bonding film.

An electronic circuit device of the present invention includes a wiring board having a flat base material, and an electrical wiring provided with a first terminal provided on one surface side of the base material and patterned into a predetermined shape;
An electronic component having a second terminal,
The electronic component is fixed to the wiring substrate by bonding the first terminal and the second terminal with a conductive bonding film,
The bonding film includes a metal atom and a leaving group composed of an organic component,
By applying energy to at least a part of the bonding film, the leaving group existing near the surface of the bonding film is released from the bonding film and is expressed in the region on the surface of the bonding film. The first terminal and the second terminal are bonded to each other according to the adhesive property.
Thereby, it is possible to provide a highly reliable electronic circuit device that can be reliably mounted on a wiring board without being exposed to high temperatures.

An electronic circuit device of the present invention includes a wiring board having a flat base material, and an electrical wiring provided with a first terminal provided on one surface side of the base material and patterned into a predetermined shape;
An electronic component having a second terminal,
The first terminal is composed of a conductive bonding film, and the electronic component is fixed to the wiring board by bonding the first terminal to the second terminal.
The bonding film includes a metal atom and a leaving group composed of an organic component,
By applying energy to at least a part of the bonding film, the leaving group existing near the surface of the bonding film is released from the bonding film and is expressed in the region on the surface of the bonding film. It is characterized in that it is bonded to the second terminal by the adhesiveness to be performed.
Thereby, it is possible to provide a highly reliable electronic circuit device that can be reliably mounted on a wiring board without being exposed to high temperatures.

In the electronic circuit device of the present invention, it is preferable that the electrical wiring is formed of a bonding film similar to the bonding film and is formed integrally with the first terminal.
Thereby, electronic components can be efficiently mounted on the wiring board, and the productivity of the manufactured electronic circuit device can be increased.
In the electronic circuit device of the present invention, it is preferable that the bonding film is formed by using a metal organic chemical vapor deposition method using an organic metal material as a raw material.
According to such a method, a bonding film having a uniform film thickness can be formed by a relatively simple process.

In the electronic circuit device of the present invention, it is preferable that the bonding film is formed in a low reducing atmosphere.
Thus, a pure metal film can be formed as a bonding film in a state in which a part of the organic substance contained in the organometallic material remains. That is, it is possible to form a bonding film having excellent characteristics as both the bonding film and the metal film. That is, the bonding strength between the electronic component and the wiring board through the bonding film is particularly excellent.

In the electronic circuit device of the present invention, it is preferable that the leaving group is a residue of a part of the organic substance contained in the organometallic material.
By adopting a structure in which the residue remaining in the film when the film is formed is used as the leaving group, it is not necessary to introduce the leaving group into the formed metal film, and the process is relatively simple. A bonding film can be formed.

In the electronic circuit device of the present invention, the leaving group is composed of an atomic group containing a carbon atom as an essential component and containing at least one of a hydrogen atom, a nitrogen atom, a phosphorus atom, a sulfur atom and a halogen atom. Is preferred.
These leaving groups are relatively excellent in binding / leaving selectivity by applying energy. For this reason, the leaving group which leaves | separates comparatively easily and uniformly by providing energy is obtained, and the adhesiveness of the bonding film can be further enhanced. As a result, the reliability of the obtained electronic circuit device can be further increased.

In the electronic circuit device of the present invention, the leaving group is preferably an alkyl group.
A leaving group composed of an alkyl group has high chemical stability. Therefore, deterioration of the bonding film having an alkyl group as a leaving group is preferably suppressed. Further, such a bonding film exhibits excellent water repellency, and even when the electronic circuit device is used in a humid environment, the bonding film does not absorb moisture and the bonding film is denatured (deteriorated). Is more reliably prevented. As a result, the reliability of the electronic circuit device can be made particularly excellent over a long period of time.

In the electronic circuit device of the present invention, the organometallic material is preferably a metal complex.
By forming the bonding film using the metal complex, it is possible to reliably form the bonding film in a state where a part of the organic substance contained in the metal complex remains.
In the electronic circuit device of the present invention, it is preferable that the metal atom is at least one of copper, aluminum, zinc, and iron.
As a result, the bonding film includes these metal atoms, so that the bonding film exhibits excellent conductivity and heat conductivity.

In the electronic circuit device of the present invention, the abundance ratio of metal atoms to carbon atoms in the bonding film is preferably 3: 7 to 7: 3.
As a result, the stability of the bonding film is increased, and the electronic component and the wiring board can be more firmly bonded via the bonding film. As a result, the reliability of the electronic circuit device is particularly excellent.

In the electronic circuit device of the present invention, the electronic component is preferably a chip capacitor, a chip resistor, a chip inductor, a transistor, or a diode.
Such an electronic component can be more suitably bonded to the wiring board via a bonding film. In addition, since an electronic circuit device is manufactured (when an electronic component is bonded to a wiring board), heat treatment at a high temperature is not required, so that an electronic circuit device in which the functions of these electronic components are sufficiently exhibited is obtained.

In the electronic circuit device according to the aspect of the invention, it is preferable that the bonding film is activated after the leaving group existing at least near the surface of the bonding film is released from the bonding film.
As a result, a bonding film that can be firmly bonded to an electronic component or a wiring board based on chemical bonding is obtained.
In the electronic circuit device of the present invention, the active hand is preferably a dangling hand or a hydroxyl group.
As a result, particularly strong bonding is possible with respect to electronic components and wiring boards.

In the electronic circuit device of the present invention, it is preferable that the average thickness of the bonding film is 50 to 1000 nm.
Thereby, an electronic component can be firmly joined to a wiring board with high dimensional accuracy. As a result, it becomes an electronic circuit device that can suitably cope with the thinning of the conductor pattern and the miniaturization of the electronic component due to the recent high integration (high density mounting) of the electronic component on the wiring board.

In the electronic circuit device of the present invention, it is preferable that the bonding film is in a solid state having no fluidity.
Thereby, the dimensional accuracy of the electronic circuit device obtained by using the bonding film is remarkably higher than the conventional one. In addition, stronger bonding can be achieved in a shorter time than in the past.
In the electronic circuit device of the present invention, it is preferable that at least one surface with which the bonding film is in contact is previously subjected to a surface treatment for improving adhesion with the bonding film.
Thereby, the surface which a bonding film contacts can be cleaned and activated, and the bonding strength of the bonding film can be increased.

In the electronic circuit device of the present invention, it is preferable that the surface treatment is a plasma treatment.
As a result, the surface with which the bonding film contacts can be particularly optimized.
In the electronic circuit device of the present invention, the energy is applied by at least one of a method of irradiating the bonding film with energy rays, a method of heating the bonding film, and a method of applying a compressive force to the bonding film. It is preferable to be carried out by a method.
Thereby, energy can be imparted to the bonding film relatively easily and efficiently.

In the electronic circuit device of the present invention, it is preferable that the energy beam is an ultraviolet ray having a wavelength of 126 to 300 nm.
As a result, the amount of energy applied to the bonding film is optimized, so that the leaving group in the bonding film can be desorbed with certainty. As a result, the bonding film can exhibit adhesiveness while preventing the characteristics (mechanical characteristics, chemical characteristics, etc.) of the bonding film from deteriorating.

In the electronic circuit device of the present invention, the heating temperature is preferably 25 to 100 ° C.
Thereby, it is possible to reliably increase the bonding strength while reliably preventing the bonded body from being deteriorated and deteriorated by heat. Furthermore, it is possible to reliably prevent the influence on the characteristics of the electronic component.

In the electronic circuit device of the present invention, the compressive force is preferably 0.2 to 10 MPa.
As a result, it is possible to reliably increase the bonding strength of these components while preventing the pressure from being too high and damaging the electronic components and the wiring board. As a result, the reliability of the electronic circuit device can be made particularly excellent.
In the electronic circuit device of the present invention, it is preferable that the application of energy is performed in an air atmosphere.
Thereby, it is not necessary to spend time and cost to control the atmosphere, and energy can be applied more easily.

In the electronic circuit device of the present invention, the electronic circuit device further includes an insulating bonding film that bonds the wiring board and the electronic component,
The bonding film includes a Si skeleton including a siloxane (Si-O) bond and a random atomic structure, and a leaving group bonded to the Si skeleton,
The insulating bonding film is configured to bond the wiring board and the electronic component by applying an energy to at least a part of the insulating bonding film so as to adhere to the region on the surface of the bonding film. Is preferred.
Thereby, especially the joint strength of an electronic component and a wiring board can be made excellent.
The electronic apparatus according to the present invention includes the electronic circuit device according to the present invention.
As a result, a highly reliable electronic device can be obtained.

  Hereinafter, an electronic circuit device and an electronic apparatus of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

<Electronic circuit device>
First, the electronic circuit device of the present invention will be described.
In the following description, a case where a chip capacitor (chip capacitor) is used as an electronic component will be described as an example.
<< First Embodiment >>
FIG. 1 is a top view showing a first embodiment of the electronic circuit device of the present invention, FIG. 2 is a cross-sectional view taken along line AA of the electronic circuit device shown in FIG. 1, and FIG. 3 is the electronic circuit device shown in FIG. FIG. 4 is a partially enlarged view showing a state before energy is applied to the bonding film having the configuration I in FIG. 4, and FIG. 4 is a partially enlarged view showing a state after applying energy to the bonding film having the structure I in FIG. 5 is a longitudinal sectional view schematically showing a film forming apparatus used when forming a bonding film having the configuration I, and FIG. 6 is a schematic view showing the structure of an ion source included in the film forming apparatus shown in FIG. 7 is a partially enlarged view showing a state before energy application of the bonding film having the structure of II, FIG. 8 is a partially enlarged view showing a state after energy application of the bonding film having the structure of II, and FIG. It is a longitudinal cross-sectional view which shows typically the film-forming apparatus used when forming the junction film of the structure of. Hereinafter, for convenience of explanation, the upper side in FIGS. 1 to 9 is referred to as “upper” or “upper”, and the lower side is referred to as “lower” or “lower”.

  The electronic circuit device 10 of the present embodiment includes a wiring board (circuit board) 7 and a chip capacitor (electronic component) 6. The wiring substrate 7 includes an insulating substrate 1 and a wiring pattern 2 provided on the substrate 1 and including a terminal (first terminal) 21. The chip capacitor 6 includes a main body 4 and electrodes (first terminals). 2 terminals) 5. In the present embodiment, the terminal 21 included in the wiring substrate 7 and the electrode 5 included in the electronic component 6 are bonded via the conductive bonding film 3. Thus, the chip capacitor 6 and the wiring substrate 7 are fixed by bonding the terminal 21 and the electrode 5 through the bonding film 3. Hereinafter, the configuration of each unit will be described in detail.

As shown in FIGS. 1 and 2, in the electronic circuit device 10, the wiring board 7 is composed of a board 1 and a wiring pattern 2.
The substrate 1 is an insulating substrate and is made of, for example, various resin materials such as polyimide and various ceramic materials such as glass. The planar view shape of the substrate 1 is a square such as a square or a rectangle.

On the substrate 1, for example, a wiring pattern 2 made of a conductive metal material such as copper is provided in a predetermined shape. A part of the wiring pattern 2 is provided with a terminal 21 so as to correspond to the electrode (external electrode) 5 of the chip capacitor 6.
The chip capacitor 6 has a configuration in which electrodes (external electrodes) 5 are provided on both end sides of the main body 4.

Such an electrode 5 is composed of, for example, a thick film such as Ag, Ag—Pd, Ag—Pt, Cu, or Ni, or plating such as Ni, Sn, Sn—Pb, or Cu.
In the electronic circuit device 10 having such a configuration, the conductive bonding film 3 is provided on the terminal 21 included in the wiring substrate 7. Then, the electrode 5 of the chip capacitor 6 is bonded to the terminal 21 of the wiring substrate 7 through the bonding film 3 so that the chip capacitor 6 and the wiring substrate 7 are electrically connected, and the wiring substrate A chip capacitor 6 is fixed on the board 7.

The present invention is characterized by the structure of the bonding film 3. Specifically, the bonding film 3 having the following structure I or II is used.
Hereinafter, each of the bonding films 3 configured as I and II will be described in detail. In the present embodiment, the bonding film 3 provided on the terminal 21 side will be described, and then the case where the electrode 5 is bonded to the terminal 21 with the bonding film 3 will be described.

I: First, the bonding film 3 having the configuration I is provided on the terminal 21 and has a metal atom, an oxygen atom bonded to the metal atom, and a leaving group 303 bonded to at least one of the metal atom and the oxygen atom. (See FIG. 3). In other words, it can be said that the bonding film 3 is obtained by introducing the leaving group 303 into a metal oxide film made of a metal oxide.
In such a bonding film 3, when energy is applied, the leaving group 303 is detached from the bonding film 3 (at least one of a metal atom and an oxygen atom), and as shown in FIG. In the vicinity of 35, an active hand 304 is generated. As a result, adhesiveness is developed on the surface of the bonding film 3. When such adhesiveness is developed, the electrode 5 of the chip capacitor 6 can be firmly bonded and fixed to the terminal 21 provided with the bonding film 3.

  Since the bonding film 3 and the electrode 5 can be bonded without being exposed to a high temperature (260 ° C. or higher) as in the case of bonding using a solder reflow process, in the chip capacitor 6, the electrode of the main body 4. As a result, it is possible to reliably prevent the occurrence of cracks at the joint portion with the electronic circuit device 5, and the electronic circuit device 10 is excellent in reliability. In addition, if the chip capacitor is exposed to such high temperatures, depending on the configuration and material of the chip capacitor, the (electrostatic) capacitance value may decrease or the temperature characteristics (temperature range within which the capacitance value inherent to the capacitor can be guaranteed) However, in this embodiment, it is possible to reliably prevent such a problem from occurring.

Further, since the bonding film 3 is composed of metal atoms and oxygen atoms bonded to the metal atoms, that is, mainly composed of metal oxides, the bonding film 3 is a strong film that is not easily deformed. For this reason, in the electronic circuit device 10, peeling from the terminal 21 of the electrode 5 can be prevented more reliably. As a result, the occurrence of peeling between the chip capacitor 6 and the wiring board 7 is reliably prevented.
Moreover, the bonding film 3 having the configuration I has excellent conductivity. Since the bonding film 3 does not conduct by point contact of Ag particles as in the case of Ag paste, the bonding film 3 itself has conductivity. Connection is particularly low resistivity.

Further, the bonding film 3 is a solid that does not have fluidity. For this reason, the thickness and shape of the adhesive layer (joining film 3) are smaller than those of a joining medium having fluidity in liquid or viscous liquid (semi-solid state), such as solder during reflow treatment or conductive adhesive. It does not change. As a result, in the highly integrated and high-density electronic circuit device 10 in which the size of the electrode 21 included in the terminal 21 and the chip capacitor 6 provided in the wiring pattern 2 is relatively small, the chip capacitor 6 is more accurately connected to the wiring substrate 7. Can be joined and fixed. Furthermore, unlike the solder reflow process, the time for fixing the electronic component on the wiring board is not required, and strong bonding is possible in a short time.
The metal atom is selected so that the function as the bonding film 3 as described above is suitably exhibited.

  Specifically, the metal atom is not particularly limited. For example, Li, Be, B, Na, Mg, Al, K, Ca, Sc, V, Cr, Mn, Fe, Co, Ni, Cu, Zn Ga, Rb, Sr, Y, Zr, Nb, Mo, Cd, In, Sn, Sb, Cs, Ba, La, Hf, Ta, W, Ti, Pb, and the like. Among these, it is preferable to use one or more of In (indium), Sn (tin), Zn (zinc), Ti (titanium), and Sb (antimony) in combination. The bonding film 3 exhibits excellent conductivity when the bonding film 3 includes these metal atoms, that is, a metal oxide including these metal atoms introduces a leaving group 303. It becomes. The bonding film 3 also has high transparency and high heat conductivity.

More specifically, examples of the metal oxide include indium tin oxide (ITO), indium zinc oxide (IZO), antimony tin oxide (ATO), fluorine-containing indium tin oxide (FTO), and zinc oxide. (ZnO) and titanium dioxide (TiO _2), and the like.
When indium tin oxide (ITO) is used as the metal oxide, the atomic ratio of indium to tin (indium / tin ratio) is preferably 191 to 80/20, and 97/3 to 85. More preferably, it is / 15. Thereby, the effects as described above can be more remarkably exhibited.

Further, the abundance ratio of metal atoms and oxygen atoms in the bonding film 3 is preferably about 3: 7 to 7: 3, and more preferably about 4: 6 to 6: 4. By setting the abundance ratio of metal atoms and oxygen atoms to be in the above range, the stability of the bonding film 3 is increased, and the terminal 21 and the electrode 5 can be bonded more firmly.
In addition, as described above, the leaving group 303 behaves so as to generate an active hand in the bonding film 3 by leaving from at least one of a metal atom and an oxygen atom. Therefore, although the leaving group 303 is relatively easily and uniformly desorbed by being given energy, it is securely bonded to the bonding film 3 so as not to be desorbed when no energy is given. Those are preferably selected.

  From this viewpoint, the leaving group 303 is preferably a hydrogen atom, a carbon atom, a nitrogen atom, a phosphorus atom, a sulfur atom, a halogen atom, or at least one of atomic groups composed of these atoms. It is done. Such a leaving group 303 is relatively excellent in bond / elimination selectivity by energy application. For this reason, such a leaving group 303 can sufficiently satisfy the above-described necessity, and the adhesiveness of the bonding film 3 can be made higher.

Examples of the atomic group (group) composed of the above atoms include, for example, an alkyl group such as a methyl group and an ethyl group, an alkoxy group such as a methoxy group and an ethoxy group, a carboxyl group, an amino group, and a sulfonic acid. Groups and the like.
Among the atoms and atomic groups as described above, in the bonding film 3 having the configuration I, the leaving group 303 is particularly preferably a hydrogen atom. Since the leaving group 303 composed of hydrogen atoms has high chemical stability, the bonding film 3 having a hydrogen atom as the leaving group 303 has excellent weather resistance and chemical resistance.

Considering the above, the bonding film 3 includes indium tin oxide (ITO), indium zinc oxide (IZO), antimony tin oxide (ATO), fluorine-containing indium tin oxide (FTO), zinc oxide ( A material in which a hydrogen atom is introduced as a leaving group 303 into a metal oxide of ZnO) or titanium dioxide (TiO ₂ ) is preferably selected.
The bonding film 3 having such a configuration itself has excellent mechanical characteristics. In addition, it exhibits particularly excellent adhesion to many materials. Therefore, such a bonding film 3 adheres particularly firmly to the terminal 21 and also exhibits a particularly strong adhesion to the electrode 5, and as a result, strongly bonds the terminal 21 and the electrode 5. be able to.

  Further, the average thickness of the bonding film 3 is preferably about 50 to 1000 nm, and more preferably about 100 to 800 nm. By setting the average thickness of the bonding film 3 within the above range, the bonding film 3 has a particularly high conductivity and heat conductivity, while the bonding strength between the electrode 5 and the terminal 21 is sufficiently high. In particular, when starting up the electronic circuit device 10, the heat generated by the chip capacitor 6 can be suitably transferred to the terminal 21 and the wiring pattern 2 through the bonding film 3. Heat is released to the outside. Thereby, the electronic circuit device 10 becomes more excellent in reliability over a long period of time.

In addition, when the average thickness of the bonding film 3 is less than the lower limit value, there is a possibility that sufficient bonding strength may not be obtained depending on the material of the bonding film 3 and the like. On the other hand, when the average thickness of the bonding film 3 exceeds the upper limit, the resistivity of the bonding film tends to increase.
Furthermore, if the average thickness of the bonding film 3 is within the above range, a certain degree of shape followability is ensured for the bonding film 3. For this reason, for example, even when unevenness exists on the bonding surface of the terminal 21 (surface adjacent to the bonding film 3), the bonding film 3 follows the shape of the unevenness depending on the height of the unevenness. Can be applied. As a result, the bonding film 3 can absorb the unevenness and reduce the height of the unevenness generated on the surface. And when the terminal 21 and the electrode 5 are joined, the adhesiveness with respect to the electrode 5 of the joining film 3 can be improved.

Note that the degree of the shape followability as described above becomes more significant as the thickness of the bonding film 3 increases. Therefore, in order to sufficiently ensure the shape following property, the thickness of the bonding film 3 may be made as thick as possible within a range in which a decrease in the heat conductivity of the bonding film 3 and the mechanical strength of the film itself is not recognized.
In the bonding film 3 as described above, when the leaving group 303 is present in almost the entire bonding film 3, for example, in the atmosphere containing the atomic component constituting the leaving group 303, It can be formed by depositing a metal oxide material containing metal atoms and oxygen atoms by a chemical vapor deposition method. In the case of uneven distribution near the surface 35 of the bonding film 3, for example, after forming a metal oxide film containing IB: metal atom and the oxygen atom, the metal oxide film is formed near the surface of the metal oxide film. It can be formed by introducing a leaving group 303 into at least one of the contained metal atom and oxygen atom.

Hereinafter, the case where the bonding film 3 is formed using the methods IA and IB will be described in detail.
IA: In the method of IA, the bonding film 3 is formed of a metal by a physical vapor deposition method (PVD method) in an atmosphere containing an atomic component constituting the leaving group 303 as described above. It is formed by depositing a metal oxide material containing atoms and oxygen atoms. When the PVD method is used as described above, the leaving group 303 can be introduced into at least one of the metal atom and the oxygen atom relatively easily when the metal oxide material is made to fly toward the terminal 21. Therefore, the leaving group 303 can be introduced over almost the entire bonding film 3.

  Furthermore, according to the PVD method, a dense and homogeneous bonding film 3 can be efficiently formed. Thereby, the bonding film 3 formed by the PVD method can be particularly strongly bonded to the electrode 5. In addition, the bonding film 3 formed by the PVD method exhibits high adhesion to the terminal 21. For this reason, a high bonding strength is obtained between the terminal 21 and the electrode 5. Furthermore, the bonding film 3 formed by the PVD method is maintained for a relatively long time in a state where energy is applied and activated. For this reason, the manufacturing process of the electronic circuit device 10 can be simplified and efficient.

  Further, examples of the PVD method include a vacuum deposition method, a sputtering method, an ion plating method, a laser ablation method, and the like. Among these, the sputtering method is preferably used. According to the sputtering method, metal oxide particles can be knocked out into an atmosphere containing an atomic component constituting the leaving group 303 without breaking a bond between a metal atom and an oxygen atom. Since the metal oxide particles can be brought into contact with a gas containing an atomic component constituting the leaving group 303, the leaving group to the metal oxide (metal atom or oxygen atom) can be contacted. 303 can be introduced more smoothly.

Hereinafter, as a method for forming the bonding film 3 by the PVD method, a case where the bonding film 3 is formed by a sputtering method (ion beam sputtering method) will be described as a representative.
First, prior to describing the method for forming the bonding film 3, the film forming apparatus 200 used when forming the bonding film 3 on the terminal 21 by ion beam sputtering will be described.
A film forming apparatus 200 shown in FIG. 5 is configured so that the bonding film 3 can be formed in a chamber (apparatus) by an ion beam sputtering method.

  Specifically, the film forming apparatus 200 includes a chamber (vacuum chamber) 211 and a substrate holder (film forming object holding unit) 212 that is installed in the chamber 211 and holds the wiring substrate 7 (film forming object). And an ion source (ion supply unit) 215 that irradiates the inside of the chamber 211 with the ion beam B, and a metal oxide that includes metal atoms and oxygen atoms by the irradiation of the ion beam B ( For example, it has a target holder (target holding portion) 217 that holds a target (metal oxide material) 216 that generates ITO.

The chamber 211 has a gas supply means 260 for supplying a gas containing an atomic component constituting the leaving group 303 (for example, hydrogen gas) into the chamber 211, and the chamber 211 is evacuated to control the pressure. And an evacuation unit 230 for performing the operation.
In the present embodiment, the substrate holder 212 is attached to the ceiling portion of the chamber 211. The substrate holder 212 is rotatable. Thereby, the bonding film 3 can be formed on the terminal 21 with a uniform and uniform thickness.

As shown in FIG. 5, the ion source (ion gun) 215 includes an ion generation chamber 256 in which an opening (irradiation port) 250 is formed, a filament 257 provided in the ion generation chamber 256, grids 253 and 254, And a magnet 255 installed outside the ion generation chamber 256.
Further, as shown in FIG. 6, a gas supply source 219 for supplying a gas (sputtering gas) is connected to the ion generation chamber 256.

In the ion source 215, when the filament 257 is energized and heated in a state where gas is supplied from the gas supply source 219 into the ion generation chamber 256, electrons are emitted from the filament 257, and the emitted electrons are generated by the magnetic field of the magnet 255. It moves and collides with gas molecules supplied into the ion generation chamber 256. Thereby, gas molecules are ionized. The ions I ⁺ of the gas are extracted from the ion generation chamber 256 and accelerated by a voltage gradient between the grid 253 and the grid 254 and are emitted (irradiated) from the ion source 215 as an ion beam B through the opening 250. Is done.

The ion beam B irradiated from the ion source 215 collides with the surface of the target 216, and particles (sputtered particles) are knocked out from the target 216. The target 216 is made of a metal oxide material as described above.
In the film forming apparatus 200, the ion source 215 is fixed (installed) on the side wall of the chamber 211 so that the opening 250 is located in the chamber 211. Note that the ion source 215 can be arranged at a position separated from the chamber 211 and connected to the chamber 211 via a connection portion. 200 can be reduced in size.

The ion source 215 is installed such that the opening 250 faces in a direction different from that of the substrate holder 212, in this embodiment, the bottom side of the chamber 211.
Note that the number of ion sources 215 is not limited to one, and may be plural. By providing a plurality of ion sources 215, the deposition rate of the bonding film 3 can be further increased. it can.

In addition, a first shutter 220 and a second shutter 221 that can cover the target holder 217 and the substrate holder 212 are disposed, respectively.
These shutters 220 and 221 are for preventing the target 216, the wiring board 7 and the bonding film 3 from being exposed to an unnecessary atmosphere or the like.

The exhaust means 230 includes a pump 232, an exhaust line 231 that communicates the pump 232 and the chamber 211, and a valve 233 provided in the middle of the exhaust line 231. The pressure can be reduced.
Further, the gas supply means 260 includes a gas cylinder 264 that stores a gas (for example, hydrogen gas) that includes an atomic component constituting the leaving group 303, a gas supply line 261 that guides the gas from the gas cylinder 264 to the chamber 211, and a gas A pump 262 and a valve 263 provided in the middle of the supply line 261 are configured so that a gas containing an atomic component constituting the leaving group 303 can be supplied into the chamber 211.

Using the film forming apparatus 200 having the above configuration, the bonding film 3 is formed on the terminal 21 as follows.
First, a mask is formed on the surface of the wiring board 7 on which the wiring pattern 2 is provided, except for the surface of the terminal 21. Then, this wiring substrate 7 is carried into the chamber 211 of the film forming apparatus 200 so that the surface on which the wiring pattern 2 is provided faces the second shutter 221, and is mounted (set) on the substrate holder 212. To do.

Next, the exhaust means 230 is operated, that is, the valve 233 is opened while the pump 232 is operated, whereby the inside of the chamber 211 is decompressed. The degree of vacuum (degree of vacuum) is not particularly limited, but is preferably about 1 × 10 ⁻⁷ to 1 × 10 ⁻⁴ Torr, preferably about 1 × 10 ⁻⁶ to 1 × 10 ⁻⁵ Torr. Is more preferable.
Further, the gas supply means 260 is operated, that is, the valve 263 is opened while the pump 262 is operated, so that the gas containing the atomic components constituting the leaving group 303 is supplied into the chamber 211. Thereby, the inside of a chamber can be made into the atmosphere containing this gas (hydrogen gas atmosphere).

The flow rate of the gas containing the atomic component constituting the leaving group 303 is preferably about 1 to 100 ccm, and more preferably about 10 to 60 ccm. Thereby, the leaving group 303 can be reliably introduced into at least one of the metal atom and the oxygen atom.
Further, the temperature in the chamber 211 may be 25 ° C. or higher, but is preferably about 25 to 100 ° C. By setting within this range, the reaction between the metal atom or oxygen atom and the gas containing the atomic component is efficiently performed, and the gas containing the atomic component is reliably introduced into the metal atom and the oxygen atom. Can do.

Next, the second shutter 221 is opened, and the first shutter 220 is further opened.
In this state, a gas is introduced into the ion generation chamber 256 of the ion source 215, and the filament 257 is energized and heated. As a result, electrons are emitted from the filament 257, and the emitted electrons collide with gas molecules, whereby the gas molecules are ionized.

The ions I ⁺ of the gas are accelerated by the grid 253 and the grid 254, emitted from the ion source 215, and collide with a target 216 made of a cathode material. Thereby, particles of metal oxide (for example, ITO) are knocked out from the target 216. At this time, since the inside of the chamber 211 is in an atmosphere containing a gas containing an atomic component constituting the leaving group 303 (for example, in a hydrogen gas atmosphere), the metal atoms contained in the particles knocked out into the chamber 211 And a leaving group 303 is introduced into the oxygen atom. The bonding oxide 3 is formed by depositing the metal oxide introduced with the leaving group 303 on the terminal 21.

In the ion beam sputtering method described in this embodiment, in the ion generation chamber 256 of the ion source 215, a discharge is performed, the electron e ^- is occurs, the electron e ^- is shielded by the grid 253, Release into the chamber 211 is prevented.
Further, since the irradiation direction of the ion beam B (the opening 250 of the ion source 215) is directed to the target 216 (a direction different from the bottom side of the chamber 211), the ultraviolet rays generated in the ion generation chamber 256 are formed. Irradiation to the bonding film 3 can be prevented more reliably, and the leaving groups 303 introduced during the formation of the bonding film 3 can be reliably prevented from detaching.
As described above, the bonding film 3 in which the leaving group 303 exists over almost the entire thickness direction can be formed.

  IB: Also, in the method of IB, the bonding film 3 is formed by forming a metal oxide film containing metal atoms and oxygen atoms, and then adding metal atoms contained in the vicinity of the surface of the metal oxide film and It is formed by introducing a leaving group 303 into at least one of oxygen atoms. According to such a method, it is possible to introduce the leaving group 303 in an unevenly distributed state near the surface of the metal oxide film in a relatively simple process, and to achieve both characteristics as a bonding film and a metal oxide film. An excellent bonding film 3 can be formed.

  Here, the metal oxide film may be formed by any method, for example, PVD method (physical vapor deposition method), CVD method (chemical vapor deposition method), plasma polymerization method, etc. The film can be formed by various vapor phase film forming methods, various liquid phase film forming methods, and the like, and it is particularly preferable to form the film by the PVD method. According to the PVD method, a dense and homogeneous metal oxide film can be efficiently formed.

  Moreover, examples of the PVD method include a vacuum deposition method, a sputtering method, an ion plating method, a laser ablation method, and the like. Among these, it is preferable to use a sputtering method. According to the sputtering method, metal oxide particles having excellent characteristics can be supplied to the terminal 21 by ejecting metal oxide particles into the atmosphere without breaking the bond between metal atoms and oxygen atoms. A physical film can be formed.

  Further, as a method for introducing the leaving group 303 near the surface of the metal oxide film, various methods are used, for example, I-B1: metal oxide in an atmosphere containing an atomic component constituting the leaving group 303. Examples include a method of heat-treating (annealing) the film, I-B2: ion implantation method, etc. Among them, it is particularly preferable to use the method of I-B1. According to the method I-B1, the leaving group 303 can be selectively introduced near the surface of the metal oxide film relatively easily. Further, by appropriately setting the processing conditions such as the atmospheric temperature and the processing time when performing the heat treatment, the amount of the leaving group 303 to be introduced, and further the thickness of the metal oxide film into which the leaving group 303 is introduced. Can be accurately controlled.

Hereinafter, a metal oxide film is formed by a sputtering method (ion beam sputtering method), and then the obtained metal oxide film is heat-treated in an atmosphere containing an atomic component constituting the leaving group 303. The case where the bonding film 3 is obtained will be described as a representative.
Note that when the bonding film 3 is formed using the IB method, a film forming apparatus similar to the film forming apparatus 200 used when forming the bonding film 3 using the IA method is used. Since it is used, description of the film forming apparatus is omitted.

First, a mask is formed on the surface of the wiring board 7 on which the wiring pattern 2 is provided, except for the surface of the terminal 21. Then, this wiring substrate 7 is carried into the chamber 211 of the film forming apparatus 200 so that the surface on which the wiring pattern 2 is provided faces the second shutter 221, and is mounted (set) on the substrate holder 212. To do.
Next, the exhaust means 230 is operated, that is, the valve 233 is opened while the pump 232 is operated, whereby the inside of the chamber 211 is decompressed. The degree of vacuum (degree of vacuum) is not particularly limited, but is preferably about 1 × 10 ⁻⁷ to 1 × 10 ⁻⁴ Torr, preferably about 1 × 10 ⁻⁶ to 1 × 10 ⁻⁵ Torr. Is more preferable.

At this time, the heating means is operated to heat the chamber 211. Although the temperature in the chamber 211 should just be 25 degreeC or more, it is preferable that it is about 25-100 degreeC. By setting within this range, a metal oxide film having a high film density can be formed.
Next, the second shutter 221 is opened, and the first shutter 220 is further opened.

In this state, a gas is introduced into the ion generation chamber 256 of the ion source 215, and the filament 257 is energized and heated. As a result, electrons are emitted from the filament 257, and the emitted electrons collide with gas molecules, whereby the gas molecules are ionized.
The ions I ⁺ of the gas are accelerated by the grid 253 and the grid 254, emitted from the ion source 215, and collide with a target 216 made of a cathode material. As a result, metal oxide (for example, ITO) particles are knocked out of the target 216 and deposited on the terminal 21 to form a metal oxide film containing metal atoms and oxygen atoms bonded to the metal atoms. It is formed.

In the ion beam sputtering method described in this embodiment, in the ion generation chamber 256 of the ion source 215, a discharge is performed, the electron e ^- is occurs, the electron e ^- is shielded by the grid 253, Release into the chamber 211 is prevented.
Further, since the irradiation direction of the ion beam B (the opening 250 of the ion source 215) is directed to the target 216 (a direction different from the bottom side of the chamber 211), the ultraviolet rays generated in the ion generation chamber 256 are formed. Irradiation to the bonding film 3 can be prevented more reliably, and the leaving groups 303 introduced during the formation of the bonding film 3 can be reliably prevented from detaching.

Next, with the second shutter 221 open, the first shutter 220 is closed.
In this state, the heating means is operated to further heat the chamber 211. The temperature in the chamber 211 is set to a temperature at which the leaving group 303 is efficiently introduced onto the surface of the metal oxide film, and is preferably about 100 to 600 ° C., more preferably about 150 to 300 ° C. preferable. By setting within such a range, the leaving group 303 can be efficiently introduced into the surface of the metal oxide film without altering or degrading the terminal 21 and the metal oxide film in the next step.

Next, the gas supply means 260 is operated, that is, the valve 263 is opened while the pump 262 is operated, so that the gas containing the atomic components constituting the leaving group 303 is supplied into the chamber 211. Thereby, the inside of the chamber 211 can be made into the atmosphere containing this gas (under hydrogen gas atmosphere).
As described above, when the inside of the chamber 211 is heated in the previous step and the inside of the chamber 211 is an atmosphere containing a gas containing an atomic component constituting the leaving group 303 (for example, under a hydrogen gas atmosphere), the metal A leaving group 303 is introduced into at least one of metal atoms and oxygen atoms existing near the surface of the oxide film, whereby the bonding film 3 is formed.

The flow rate of the gas containing the atomic component constituting the leaving group 303 is preferably about 1 to 100 ccm, and more preferably about 10 to 60 ccm. Thereby, the leaving group 303 can be reliably introduced into at least one of the metal atom and the oxygen atom.
Note that it is preferable that the reduced pressure state adjusted by operating the exhaust means 230 is maintained in the chamber 211 in the above-described step. Thereby, the leaving group 303 can be introduced more smoothly into the vicinity of the surface of the metal oxide film. In addition, by reducing the pressure in the chamber 211 in this step while maintaining the reduced pressure state of the above step, it is possible to reduce the time for reducing the pressure again, thereby reducing the film formation time and the film formation cost. The advantage of being able to do it is also obtained.

The degree of vacuum (degree of vacuum) is not particularly limited, but is preferably about 1 × 10 ⁻⁷ to 1 × 10 ⁻⁴ Torr, preferably about 1 × 10 ⁻⁶ to 1 × 10 ⁻⁵ Torr. Is more preferable.
Moreover, it is preferable that the time which heat-processes is about 15 to 120 minutes, and it is more preferable that it is about 30 to 60 minutes.

Although depending on the type of leaving group 303 to be introduced and the like, the metal oxide film can be obtained by setting the conditions (temperature in the chamber 211, degree of vacuum, gas flow rate, treatment time) during the heat treatment within the above ranges. A leaving group 303 can be selectively introduced in the vicinity of the surface.
As described above, the bonding film 3 in which the leaving group 303 is unevenly distributed near the surface 35 can be formed.

II: Next, the bonding film 3 having the configuration II is provided on the terminal 21 and includes a leaving group 303 including a metal atom and an organic component (see FIG. 7).
In such a bonding film 3, when energy is applied, the leaving group 303 is released from at least the vicinity of the surface 35 of the bonding film 3, and as shown in FIG. A hand 304 is generated. Thereby, adhesiveness is developed on the surface of the bonding film 3. When such adhesiveness is developed, the electrode 5 can be firmly bonded and fixed to the terminal 21 provided with the bonding film 3.

  Since the bonding film 3 and the electrode 5 can be bonded without being exposed to a high temperature (260 ° C. or higher) as in the case of bonding using a solder reflow process, in the chip capacitor 6, the electrode of the main body 4. As a result, it is possible to reliably prevent the occurrence of cracks at the joint portion with the electronic circuit device 5, and the electronic circuit device 10 is excellent in reliability. In addition, if the chip capacitor is exposed to such high temperatures, depending on the configuration and material of the chip capacitor, the (electrostatic) capacitance value may decrease or the temperature characteristics (temperature range within which the capacitance value inherent to the capacitor can be guaranteed) However, in this embodiment, it is possible to reliably prevent such a problem from occurring.

Further, since the bonding film 3 is a film containing a metal atom and a leaving group 303 composed of an organic component, that is, an organic metal film, the bonding film 3 is a strong film that is difficult to be deformed. For this reason, in the electronic circuit device 10, peeling from the terminal 21 of the electrode 5 can be prevented more reliably. As a result, the occurrence of peeling between the chip capacitor 6 and the wiring board 7 is reliably prevented.
Moreover, the bonding film 3 having the configuration I has excellent conductivity. Since the bonding film 3 does not conduct by point contact of Ag particles as in the case of Ag paste, the bonding film 3 itself has conductivity. Connection is particularly low resistivity.

  Further, the bonding film 3 is a solid that does not have fluidity. For this reason, the thickness and shape of the adhesive layer (joining film 3) are smaller than those of a joining medium having fluidity in liquid or viscous liquid (semi-solid state), such as solder during reflow treatment or conductive adhesive. It does not change. As a result, in the highly integrated and high-density electronic circuit device 10 in which the size of the terminal 21 provided in the wiring pattern 2 and the electrode 5 included in the chip capacitor 6 is relatively small, the chip capacitor 6 is accurately bonded to the wiring substrate 7. Can be fixed. Furthermore, unlike the solder reflow process, the time for fixing the electronic component on the wiring board is not required, and strong bonding is possible in a short time.

The metal atom and the leaving group 303 are selected so that the function as the bonding film 3 as described above is suitably exhibited.
Specifically, examples of the metal atom include Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Hf, Transition metal elements such as Ta, W, Re, Os, Ir, Pt, Au, various lanthanoid elements, various actinoid elements, Li, Be, Na, Mg, Al, K, Ca, Zn, Ga, Rb, Sr, Typical metal elements such as Cd, In, Sn, Sb, Cs, Ba, Tl, Pd, Bi, and Po are listed.

  Here, since the transition metal element is the only difference in the number of outermost electrons between the transition metal elements, the physical properties are similar. Transition metals generally have high hardness and melting point, and high electrical conductivity and thermal conductivity. For this reason, when a transition metal element is used as a metal atom, the adhesiveness expressed in the bonding film 3 can be further enhanced. In addition, the conductivity and heat conductivity of the bonding film 3 can be further increased.

  Further, when one or more of Cu, Al, Zn, and Fe are used as metal atoms in combination, the bonding film 3 exhibits excellent conductivity and heat conductivity. Further, when the bonding film 3 is formed by using a metal organic chemical vapor deposition method to be described later, a bonding film having a relatively easy and uniform film thickness using a metal complex containing these metals as a raw material. 3 can be formed.

  Further, as described above, the leaving group 303 behaves so as to generate an active hand in the bonding film 3 by detaching from the bonding film 3. Therefore, although the leaving group 303 is relatively easily and uniformly desorbed by being given energy, it is securely bonded to the bonding film 3 so as not to be desorbed when no energy is given. Those are preferably selected.

  Specifically, in the bonding film 3 having the structure II, the leaving group 303 includes a carbon atom as an essential component and includes at least one of a hydrogen atom, a nitrogen atom, a phosphorus atom, a sulfur atom, and a halogen atom. An atomic group is preferably selected. Such a leaving group 303 is relatively excellent in bond / elimination selectivity by energy application. For this reason, such a leaving group 303 can sufficiently satisfy the above-described necessity, and the adhesiveness of the bonding film 3 can be made higher.

More specifically, examples of the atomic group (group) include an alkyl group such as a methyl group and an ethyl group, an alkoxy group such as a methoxy group and an ethoxy group, and a carboxyl group, and the end of the alkyl group is an isocyanate group. And those terminated with a group, an amino group, a sulfonic acid group, and the like.
Among the atomic groups as described above, the leaving group 303 is particularly preferably an alkyl group. Since the leaving group 303 composed of an alkyl group has high chemical stability, the bonding film 3 having an alkyl group as the leaving group 303 has excellent weather resistance and chemical resistance.

  In the bonding film 3 having such a configuration, the abundance ratio of metal atoms to oxygen atoms is preferably about 3: 7 to 7: 3, and more preferably about 4: 6 to 6: 4. By setting the abundance ratio of metal atoms and carbon atoms to be in the above range, the stability of the bonding film 3 is increased, and the terminal 21 and the electrode 5 can be bonded more firmly. Further, the bonding film 3 can exhibit excellent conductivity and heat conductivity.

  Further, the average thickness of the bonding film 3 is preferably about 50 to 1000 nm, and more preferably about 100 to 800 nm. By setting the average thickness of the bonding film 3 within the above range, the bonding film 3 has a particularly high conductivity and heat conductivity, while the bonding strength between the electrode 5 and the terminal 21 is sufficiently high. In particular, when the electronic circuit device 10 is activated, even when the chip capacitor 6 generates heat, heat can be suitably transferred to the terminal 21 and the wiring pattern 2 through the bonding film 3. Thereby, the electronic circuit device 10 becomes more excellent in reliability over a long period of time.

In addition, when the average thickness of the bonding film 3 is less than the lower limit value, there is a possibility that sufficient bonding strength may not be obtained depending on the material of the bonding film 3 and the like. On the other hand, when the average thickness of the bonding film 3 exceeds the upper limit, the resistivity of the bonding film tends to increase.
Furthermore, if the average thickness of the bonding film 3 is within the above range, a certain degree of shape followability is ensured for the bonding film 3. For this reason, for example, even when unevenness exists on the bonding surface of the terminal 21 (surface adjacent to the bonding film 3), the bonding film 3 follows the shape of the unevenness depending on the height of the unevenness. Can be applied. As a result, the bonding film 3 can absorb the unevenness and reduce the height of the unevenness generated on the surface. And when the terminal 21 and the electrode 5 are joined, the adhesiveness with respect to the electrode 5 of the joining film 3 can be improved.
Note that the degree of the shape followability as described above becomes more significant as the thickness of the bonding film 3 increases. Therefore, in order to sufficiently ensure the shape following property, the thickness of the bonding film 3 may be made as thick as possible within a range in which a decrease in the heat conductivity of the bonding film 3 and the mechanical strength of the film itself is not recognized.

  The bonding film 3 as described above may be formed by any method. For example, II-A: an organic substance containing a leaving group (organic component) 303 on a metal film composed of metal atoms, A method of forming the bonding film 3 by applying to almost the entire metal film, II-B: An organic substance containing a leaving group (organic component) 303 is added to the metal film composed of metal atoms in the vicinity of the surface of the metal film. A method of forming the bonding film 3 by selectively applying (chemical modification), II-C: Organometallic chemicals using, as raw materials, an organometallic material having a metal atom and an organic substance containing a leaving group (organic component) 303 Examples thereof include a method of forming the bonding film 3 using a phase growth method. Among these, it is preferable to form the bonding film 3 by the II-C method. According to such a method, the bonding film 3 having a uniform film thickness can be formed by a relatively simple process.

Hereinafter, the II-C method, that is, a method of forming the bonding film 3 using a metal organic chemical vapor deposition method using an organic metal material having a metal atom and an organic substance containing a leaving group (organic component) 303 as a raw material. Thus, the case where the bonding film 3 is obtained will be described as a representative.
First, prior to describing the method of forming the bonding film 3, a film forming apparatus 500 used when forming the bonding film 3 will be described.

A film forming apparatus 500 shown in FIG. 9 is configured so that the bonding film 3 can be formed in the chamber 511 by a metal organic chemical vapor deposition method (hereinafter sometimes abbreviated as “MOCVD method”). .
Specifically, the film forming apparatus 500 includes a chamber (vacuum chamber) 511, a substrate holder (film forming object holding unit) 512 that is installed in the chamber 511 and holds the terminal 21 (film forming object), , An organometallic material supplying means 560 for supplying a vaporized or atomized organometallic material into the chamber 511, a gas supplying means 570 for supplying a gas for making the inside of the chamber 511 under a low reducing atmosphere, and a chamber 511 It has an exhaust means 530 for controlling the pressure by exhausting the inside, and a heating means (not shown) for heating the substrate holder 512.

The substrate holder 512 is attached to the bottom of the chamber 511 in this embodiment. The substrate holder 512 can be rotated by the operation of a motor. Thereby, the bonding film can be formed on the terminal 21 with a uniform and uniform thickness.
Further, in the vicinity of the substrate holder 512, a shutter 521 that can cover them is provided. The shutter 521 is for preventing the terminal 21 and the bonding film 3 from being exposed to an unnecessary atmosphere or the like.

The organometallic material supply unit 560 is connected to the chamber 511. The organometallic material supply means 560 includes a storage tank 562 that stores a solid organometallic material, a gas cylinder 565 that stores a carrier gas that feeds the vaporized or atomized organometallic material into the chamber 511, and a carrier gas. And a gas supply line 561 for introducing the vaporized or atomized organometallic material into the chamber 511, and a pump 564 and a valve 563 provided in the middle of the gas supply line 561. In the organometallic material supply unit 560 having such a configuration, the storage tank 562 has a heating unit, and the operation of the heating unit can heat and vaporize the solid organometallic material. Therefore, when the pump 564 is operated with the valve 563 opened and the carrier gas is supplied from the gas cylinder 565 to the storage tank 562, the organometallic material vaporized or atomized together with the carrier gas passes through the supply line 561. Then, it is supplied into the chamber 511.
In addition, it does not specifically limit as carrier gas, For example, nitrogen gas, argon gas, helium gas, etc. are used suitably.

In this embodiment, the gas supply unit 570 is connected to the chamber 511. The gas supply means 570 includes a gas cylinder 575 for storing a gas for making the inside of the chamber 511 under a low reducing atmosphere, a gas supply line 571 for introducing the gas for making the low reducing atmosphere into the chamber 511, The pump 574 and the valve 573 are provided in the middle of the gas supply line 571. In the gas supply means 570 having such a configuration, when the pump 574 is operated with the valve 573 opened, the gas for setting the low reducing atmosphere is supplied from the gas cylinder 575 via the supply line 571 to the chamber 511. It is designed to be supplied inside. With such a configuration of the gas supply unit 570, the inside of the chamber 511 can be surely set in a low reduction atmosphere with respect to the organometallic material. As a result, when forming the bonding film 3 using the MOCVD method using the organic metal material as a raw material, at least a part of the organic component contained in the organic metal material is left as the leaving group 303 in a state in which the bonding film 3 is left. Is deposited.
The gas for making the inside of the chamber 511 under a low reducing atmosphere is not particularly limited, and examples thereof include nitrogen gas and rare gases such as helium, argon, and xenon. A combination of more than one species can be used.

  In the case of using an organic metal material containing an oxygen atom in the molecular structure, such as 2,4-pentadionate-copper (II) or [Cu (hfac) (VTMS)] described later. In addition, it is preferable to add hydrogen gas to the gas for achieving a low reducing atmosphere. Thereby, the reducibility with respect to oxygen atoms can be improved, and the bonding film 3 can be formed without excessive oxygen atoms remaining in the bonding film 3. As a result, the bonding film 3 has a low abundance of metal oxide in the film and exhibits excellent conductivity.

In addition, when at least one of the nitrogen gas, argon gas and helium gas described above is used as the carrier gas, the carrier gas can also exhibit a function as a gas for providing a low reducing atmosphere. it can.
The exhaust means 530 includes a pump 532, an exhaust line 531 that communicates the pump 532 and the chamber 511, and a valve 533 provided in the middle of the exhaust line 531. The pressure can be reduced.

The bonding film 3 is formed on the terminal 21 by the MOCVD method using the film forming apparatus 500 having the above configuration as follows.
First, a mask is formed on the surface of the wiring board 7 on which the wiring pattern 2 is provided, except for the surface of the terminal 21. Then, this wiring substrate 7 is carried into the chamber 511 of the film forming apparatus 500 and mounted (set) on the substrate holder 512 so that the surface on which the wiring pattern 2 is provided faces the shutter 521 side.

Next, the exhaust means 530 is operated, that is, the valve 533 is opened while the pump 532 is operated, so that the inside of the chamber 511 is decompressed. The degree of vacuum (degree of vacuum) is not particularly limited, but is preferably about 1 × 10 ⁻⁷ to 1 × 10 ⁻⁴ Torr, preferably about 1 × 10 ⁻⁶ to 1 × 10 ⁻⁵ Torr. Is more preferable.
Further, by operating the gas supply means 570, that is, by opening the valve 573 while the pump 574 is operated, a gas for making a low reducing atmosphere is supplied into the chamber 511, and the inside of the chamber 511 is supplied. Under a low reducing atmosphere. The flow rate of the gas by the gas supply unit 570 is not particularly limited, but is preferably about 0.1 to 10 sccm, and more preferably about 0.5 to 5 sccm.

  Further, at this time, the heating means is operated to heat the substrate holder 512. The temperature of the substrate holder 512 is slightly different depending on the type of the bonding film 3 to be formed, that is, the type of raw material used when forming the bonding film 3, but is preferably about 80 to 300 ° C., and 100 to 275 ° C. More preferred is the degree. By setting within this range, it is possible to form the bonding film 3 having excellent adhesiveness using an organometallic material described later.

Next, the shutter 521 is opened.
Then, by operating the heating means provided in the storage tank 562 in which the solid organic metal material is stored, the pump 564 is operated in a state where the organic metal material is vaporized, and the valve 563 is opened to vaporize. Alternatively, the atomized organometallic material is introduced into the chamber together with the carrier gas.

As described above, when the vaporized or atomized organometallic material is supplied into the chamber 511 in a state where the substrate holder 512 is heated in the above-described process, the organometallic material is heated on the terminal 21, thereby The bonding film 3 can be formed on the terminal 21 in a state where a part of the organic substance contained in the material remains.
That is, according to the MOCVD method, if a film containing metal atoms is formed so that a part of the organic substance contained in the organometallic material remains, a part of the organic substance exhibits a function as the leaving group 303. The film 3 can be formed on the terminal 21.

The organometallic material used in such MOCVD method is not particularly limited. For example, 2,4-pentadionate-copper (II), tris (8-quinolinolato) aluminum (Alq ₃ ), tris (4 - methyl-8-quinolinolato) aluminum (III) (Almq _3), (8- hydroxyquinoline) zinc _(Znq 2), copper phthalocyanine, Cu (hexafluoroacetylacetonate) (vinyltrimethylsilane) [Cu (hfac) (VTMS )], Cu (hexafluoroacetylacetonate) (2-methyl-1-hexen-3-ene) [Cu (hfac) (MHY)], Cu (perfluoroacetylacetonate) (vinyltrimethylsilane) [Cu ( pfac) (VTMS)], Cu (perfluoroacetylacetonate) 2-methyl-1-hexene-3-ene) [Cu (pfac) (MHY)] metal complexes, such as, trimethyl gallium, trimethyl aluminum, alkali metal or such as diethyl zinc, derivatives thereof. Among these, the organometallic material is preferably a metal complex. By using the metal complex, the bonding film 3 can be reliably formed in a state where a part of the organic substance contained in the metal complex remains.

Further, in this embodiment, the gas supply means 570 is operated so that the inside of the chamber 511 is in a low reducing atmosphere. Without being formed, it is possible to form a film in a state in which part of the organic substance contained in the organometallic material remains. That is, the bonding film 3 having excellent characteristics as both the bonding film and the metal film can be formed.
The flow rate of the vaporized or atomized organometallic material is preferably about 0.1 to 100 ccm, and more preferably about 0.5 to 60 ccm. Accordingly, the bonding film 3 can be formed with a uniform film thickness and with a part of the organic substance contained in the organometallic material remaining.

As described above, when the bonding film 3 is formed, the residue remaining in the film is used as the leaving group 303, so that it is not necessary to introduce the leaving group into the formed metal film or the like. The bonding film 3 can be formed by a relatively simple process.
Note that part of the organic substance remaining in the bonding film 3 formed using the organometallic material may function as the leaving group 303, or part of the organic substance may function as the leaving group 303. It may function as.

As described above, the bonding film 3 having the configuration of I or II can be formed on the terminal 21, and then the mask formed except for the bonding surface 43 is removed by using various etching methods.
Prior to forming the bonding film 3 by the above-described method, at least the region of the terminal 21 where the bonding film 3 is to be formed is previously set in accordance with the constituent material of the terminal 21 (wiring pattern 2). It is preferable to perform a surface treatment that improves the adhesion between the adhesive film 3 and the bonding film 3.

  Examples of the surface treatment include physical surface treatment such as sputtering treatment and blast treatment, plasma treatment using oxygen plasma, nitrogen plasma, etc., corona discharge treatment, etching treatment, electron beam irradiation treatment, ultraviolet irradiation treatment, ozone Examples include chemical surface treatment such as exposure treatment, or a combination of these. By performing such treatment, the region where the bonding film 3 of the terminal 21 is to be formed can be cleaned and the region can be activated. As a result, the bonding strength between the bonding film 3 and the terminal 21 can be increased.

Further, by using plasma treatment among these surface treatments, the surface of the terminal 21 can be particularly optimized in order to form the bonding film 3.
In the above description, the configuration in which the bonding film 3 is provided on the terminal 21 has been described. However, the bonding film 3 may be provided on the electrode 5 of the chip capacitor 6. In this case, the surface treatment as described above may be performed in advance on at least the region of the electrode 5 where the bonding film 3 is to be formed.
Further, the bonding film 3 may be provided on both the terminal 21 and the electrode 5. In this case, the surface treatment may be performed on both the terminal 21 and the electrode 5 or may be selectively performed on either one.

<Manufacturing method>
Next, a method for manufacturing the electronic circuit device 10 of this embodiment will be described.
10 and 11 are diagrams for explaining a method of manufacturing the electronic circuit device 10 of the present embodiment. In the following, for convenience of explanation, the upper side in FIG. 10 is referred to as “upper” and the lower side is referred to as “lower”.
[1] First, a wiring board (circuit board) 7 having a wiring pattern 2 having terminals 21 is prepared on the board 1 (see FIG. 10A). Thereafter, the bonding film 3 is formed by patterning on the terminal 21 by the method as described above (see FIG. 10B). Note that the region where the bonding film 3 is formed may be formed only in a region matching the shape of the electrode 5 to be bonded later, or may be formed on the entire upper surface of the terminal 21.

[2] Next, energy is applied to the surface 35 of the bonding film 3. The application of energy to the surface 35 may be performed by applying energy over the entire upper surface of the terminal 21, or may be performed by selectively applying energy to the surface 35.
Here, when energy is applied to the bonding film 3, in the bonding film 3, after the bond of the leaving group 303 is cut and released from the vicinity of the surface 35 of the bonding film 3, A hand is generated near the surface 35 of the bonding film 3. Thereby, adhesiveness with the electrode 5 is expressed on the surface 35 of the bonding film 3.

The bonding film 3 in such a state can be strongly bonded to the electrode 5 based on chemical bonding.
Here, the energy applied to the bonding film 3 may be applied using any method. For example, a method of irradiating the bonding film 3 with an energy beam, a method of heating the bonding film 3, and bonding Examples include a method of applying a compressive force (physical energy) to the film 3, a method of exposing the bonding film 3 to plasma (applying plasma energy), a method of exposing the bonding film 3 to ozone gas (applying chemical energy), and the like. It is done. In particular, in the present embodiment, as a method for applying energy to the bonding film 3, it is particularly preferable to use a method of irradiating the bonding film 3 with energy rays. Since this method can apply energy to the bonding film 3 relatively easily and efficiently, it is preferably used as a method for applying energy.

Among these, as energy rays, for example, light such as ultraviolet rays and laser beams, X-rays, γ rays, electron beams, particle beams such as ion beams, etc., or a combination of two or more of these energy rays Is mentioned.
Among these energy rays, it is particularly preferable to use ultraviolet rays having a wavelength of about 126 to 300 nm (see FIG. 10C). With the ultraviolet rays within such a range, the amount of energy applied is optimized, so that the leaving group 303 in the bonding film 3 can be reliably detached. As a result, it is possible to reliably cause the bonding film 3 to exhibit adhesiveness while preventing the characteristics (mechanical characteristics, chemical characteristics, etc.) of the bonding film 3 from deteriorating.

In addition, since ultraviolet rays can be processed in a short time without unevenness, the leaving group 303 can be efficiently eliminated. Furthermore, ultraviolet rays also have the advantage that they can be generated with simple equipment such as UV lamps.
The wavelength of the ultraviolet light is more preferably about 126 to 200 nm.
In the case of using the UV lamp, the output may vary depending on the area of the bonding film 3 is preferably from ^1mW / cm ^{2 ~1W} / cm 2 or ^so, at 5mW / cm ² ~50mW / cm 2 of about More preferably. In this case, the distance between the UV lamp and the bonding film 3 is preferably about 3 to 3000 mm, more preferably about 10 to 1000 mm.

The time for irradiating with ultraviolet rays is preferably set to a time that allows the leaving group 303 near the surface 35 of the bonding film 3 to be eliminated, that is, a time that the bonding film 3 is not irradiated with ultraviolet rays more than necessary. . As a result, it is possible to effectively prevent the bonding film 3 from being altered or deteriorated. Specifically, it is preferably about 0.5 to 30 minutes, more preferably about 1 to 10 minutes, although it varies slightly depending on the amount of ultraviolet light, the constituent material of the bonding film 3 and the like.
Moreover, although an ultraviolet-ray may be irradiated continuously in time, you may irradiate intermittently (pulse form).

  On the other hand, examples of the laser light include a pulsed laser (pulse laser) such as an excimer laser, a continuous wave laser such as a carbon dioxide laser, and a semiconductor laser. Among these, a pulse laser is preferably used. In the pulse laser, heat hardly accumulates with time in the portion of the bonding film 3 irradiated with the laser light, so that the deterioration and deterioration of the bonding film 3 due to the accumulated heat can be reliably prevented. That is, according to the pulse laser, it is possible to prevent the heat accumulated in the bonding film 3 from being affected.

  The pulse width of the pulse laser is preferably as short as possible in consideration of the influence of heat. Specifically, the pulse width is preferably 1 ps (picosecond) or less, and more preferably 500 fs (femtosecond) or less. If the pulse width is within the above range, the influence of heat generated in the bonding film 3 due to laser light irradiation can be accurately suppressed. A pulse laser having a pulse width as small as the above range is called a “femtosecond laser”.

The wavelength of the laser light is not particularly limited, but is preferably about 200 to 1200 nm, and more preferably about 400 to 1000 nm.
In the case of a pulse laser, the peak output of the laser light varies depending on the pulse width, but is preferably about 0.1 to 10 W, and more preferably about 1 to 5 W.
Furthermore, the repetition frequency of the pulse laser is preferably about 0.1 to 100 kHz, and more preferably about 1 to 10 kHz. By setting the frequency of the pulse laser within the above range, the temperature of the portion irradiated with the laser light is remarkably increased, and the leaving group 303 can be reliably cut from the vicinity of the surface 35 of the bonding film 3.

  The various conditions of such laser light are such that the temperature of the portion irradiated with the laser light is preferably from room temperature (room temperature) to about 600 ° C., more preferably about 200 to 600 ° C., and even more preferably 300 to 400 ° C. It is preferable to adjust as appropriate. As a result, the temperature of the portion irradiated with the laser beam is significantly increased, and the leaving group 303 can be reliably cut from the bonding film 3.

In addition, it is preferable that the laser light applied to the bonding film 3 is scanned along the surface 35 in a state where the focal point is aligned with the surface 35 of the bonding film 3. Thereby, the heat generated by the laser light irradiation is locally accumulated in the vicinity of the surface 35. As a result, the leaving group 303 present on the surface 35 of the bonding film 3 can be selectively removed.
The bonding film 3 may be irradiated with energy rays in any atmosphere. Specifically, the atmosphere, an oxidizing gas atmosphere such as oxygen, a reducing gas atmosphere such as hydrogen, nitrogen, An inert gas atmosphere such as argon or a reduced pressure (vacuum) atmosphere in which these atmospheres are decompressed may be mentioned, and it is particularly preferable to perform in an air atmosphere. Thereby, it is not necessary to spend time and cost to control the atmosphere, and irradiation of energy rays can be performed more easily.

  As described above, according to the method of irradiating energy rays, it is possible to easily apply energy selectively to the vicinity of the surface 35 of the bonding film 3. Can be prevented. In particular, when the terminal 21 and the electrode 5 are electrically connected as in the conventional solder reflow process, it is not necessary to expose the chip capacitor 6 and the wiring board 7 to a high temperature. It is possible to more reliably prevent the characteristics (capacitance value, temperature characteristic) of the chip capacitor 6 from being altered. As a result, the reliability of the electronic circuit device 10 can be further improved.

Moreover, according to the method of irradiating energy rays, the magnitude of energy to be applied can be easily adjusted with high accuracy. For this reason, it becomes possible to adjust the desorption amount of the leaving group 303 desorbed from the bonding film 3. By adjusting the amount of elimination of the leaving group 303 in this way, the bonding strength between the bonding film 3 and the electrode 5 can be easily controlled.
That is, by increasing the amount of elimination of the leaving group 303, more active hands are generated in the vicinity of the surface 35 of the bonding film 3, so that the adhesiveness expressed in the bonding film 3 can be further enhanced. On the other hand, by reducing the amount of elimination of the leaving group 303, the number of active hands generated in the vicinity of the surface 35 of the bonding film 3 can be reduced, and the adhesiveness expressed in the bonding film 3 can be suppressed.

In addition, in order to adjust the magnitude | size of the energy to provide, what is necessary is just to adjust conditions, such as the kind of energy beam, the output of an energy beam, the irradiation time of an energy beam.
Furthermore, according to the method of irradiating energy rays, a large amount of energy can be applied in a short time, so that the energy can be applied more efficiently.
Here, the bonding film 3 before energy is applied has a leaving group 303 near the surface 35 as shown in FIGS. 3 and 7. When energy is applied to the bonding film 3, the leaving group 303 (a hydrogen atom in FIG. 3 and a methyl group in FIG. 7) is released from the bonding film 3. As a result, as shown in FIGS. 4 and 8, active hands 304 are generated on the surface 35 of the bonding film 3 and activated. As a result, adhesiveness develops on the surface of the bonding film 3.

  Here, in the present specification, the state in which the bonding film 3 is “activated” means that the surface 35 of the bonding film 3 and the internal leaving group 303 are desorbed as described above, and the structure of the bonding film 3 is formed. In addition to the state in which an unterminated bond hand (hereinafter also referred to as “unbonded hand” or “dangling bond”) occurs in the atom, this unbonded hand is terminated by a hydroxyl group (OH group). Furthermore, the bonding film 3 is referred to as an “activated” state including a state in which these states are mixed.

Therefore, the active hand 304 means an unbonded hand (dangling bond) or an unbonded hand terminated by a hydroxyl group, as shown in FIGS. If such active hands 304 are present, particularly strong bonding to the electrode 5 becomes possible.
The latter state (state in which the dangling bond is terminated by a hydroxyl group) is, for example, that the moisture in the atmosphere terminates the dangling bond by irradiating the bonding film 3 with energy rays in the atmospheric air. Therefore, it is easily generated.

  [3] Next, a chip capacitor 6 that functions as an electronic component is prepared by the conduction of electrodes (external electrodes) 5 provided on both ends. Then, as illustrated in FIG. 11D, the bonding film 3 is brought into contact with the electrode 5 so that the activated bonding film 3 and the electrode 5 are in close contact with each other. Thereby, in the said process [2], since the adhesiveness with respect to the electrode 5 (adhered body) has expressed the joining film 3, the joining film 3 and the electrode 5 will be couple | bonded chemically, and joining film | membrane 3 is adhered to the electrode 5, and the electronic circuit device 10 in which the electrode 5 is mounted (mounted) on the terminal 21 can be obtained. (See FIG. 11 (e)).

  In the electronic circuit device 10 in which the bonding film 3 and the electrode 5 are bonded in this way, it is necessary to melt and resolidify the solder as in the solder reflow process for bonding the external electrode of the electronic component and the terminal of the circuit board. The bonding film 3 and the electrode 5 are bonded based on a strong chemical bond that occurs in a short time such as a covalent bond. For this reason, the manufacturing time of the electronic circuit device 10 can be shortened, and the productivity of the electronic circuit device 10 can be increased. In addition, the bonding film 3 and the electrode 5 are extremely difficult to peel off. As a result, the bonding strength between the electrode 5 and the terminal 21 can be made excellent, and the occurrence of cracks is reliably prevented. A high electronic circuit device 10 can be obtained.

In the region used for bonding the electrode 5 to the bonding film 3 as described above, the surface treatment for improving the adhesion with the bonding film 3 on the surface of the electrode 5 in contact with the bonding film 3, similarly to the terminal 21. It is preferable to apply. Thereby, the bonding strength between the bonding film 3 and the electrode 5 can be further increased.
As the surface treatment, the same treatment as the surface treatment described above applied to the terminal 21 can be applied.

Here, a mechanism for bonding the bonding film 3 and the electrode 5 in this step will be described.
For example, the case where a hydroxyl group is exposed in the region of the electrode 5 that is bonded to the bonding film 3 will be described as an example. When bonded, the hydroxyl group present on the surface 35 of the bonding film 3 and the hydroxyl group present in the region of the electrode 5 are attracted to each other by hydrogen bonding, and an attractive force is generated between the hydroxyl groups. It is assumed that the bonding film 3 and the electrode 5 are bonded by this attractive force.

Further, the hydroxyl groups attracting each other by the hydrogen bond are cleaved from the surface with dehydration condensation depending on the temperature condition or the like. As a result, at the contact interface between the bonding film 3 and the electrode 5, the bonds in which the hydroxyl groups are bonded are bonded. Thereby, it is speculated that the bonding film 3 and the electrode 5 are bonded more firmly.
Note that the active state of the surface of the bonding film 3 activated in the step [2] relaxes with time. For this reason, it is preferable to perform this process [3] as soon as possible after completion of the process [2]. Specifically, after the completion of the step [2], the step [3] is preferably performed within 60 minutes, and more preferably within 5 minutes. Within this time, the surface of the bonding film 3 is maintained in a sufficiently active state, so that when the bonding film 3 is bonded to the electrode 5 in this step, sufficient bonding strength is obtained between them. Can do.

In other words, the bonding film 3 before activation is a chemically relatively stable film having the leaving group 303 and has excellent weather resistance. For this reason, the bonding film 3 before activation is suitable for long-term storage. Accordingly, the bonding film 3 is stored in the terminal 21 of the wiring board 7 and stored in the state where the chip capacitor 6 is mounted (bonding in this process). 2) is effective from the viewpoint of manufacturing efficiency of the electronic circuit device 10.
In addition, after the above-described step [3], the following two steps [4] ([4A] and [4B]) are performed on the terminal 21 and the electrode 5 bonded via the bonding film 3 as necessary. Of these, at least one step (step of increasing the bonding strength between the terminal 21 and the electrode 5) may be performed. Thereby, the joint strength of the electronic circuit device 10 can be further improved.

[4A] In this step, the terminal 21 and the electrode 5 bonded through the bonding film 3 are pressurized in a direction approaching each other.
Thereby, the surface of the bonding film 3 is closer to the surface of the terminal 21 and the surface of the electrode 5, respectively, and the bonding strength between the terminal 21 and the electrode 5 can be further increased.
Further, by pressurizing the terminal 21 and the electrode 5, the bonding interface between the bonding film 3 and the terminal 21 and the gap remaining at the bonding interface between the bonding film 3 and the electrode 5 are crushed to reduce the bonding area. It can be further expanded. As a result, the bonding between the terminal 21 and the electrode 5 through the bonding film 3 can be made more reliable.

At this time, the pressure at the time of pressurizing the terminal 21 and the electrode 5 is a pressure that does not damage the chip capacitor 6 and the wiring board 7 and is preferably as high as possible. Thereby, the joint strength between the terminal 21 and the electrode 5 can be increased in proportion to the pressure.
In addition, what is necessary is just to adjust this pressure suitably according to conditions, such as each component material of each of the terminal 21 and the electrode 5, each thickness, and a joining apparatus. Specifically, although it is slightly different depending on the constituent materials and thicknesses of the terminal 21 and the electrode 5, it is preferably about 0.2 to 10 MPa, more preferably about 1 to 5 MPa. Thereby, the joining strength between the terminal 21 and the electrode 5 can be reliably increased. In addition, although this pressure may exceed the said upper limit, depending on each constituent material of the terminal 21 and the electrode 5, there exists a possibility that the terminal 21 and the electrode 5 may be damaged.
The time for pressurization is not particularly limited, but is preferably about 10 seconds to 30 minutes. In addition, what is necessary is just to change suitably the time to pressurize according to the pressure at the time of pressurizing. Specifically, the higher the pressure at which the electrode 5 is pressed, the more the bonding strength can be improved even if the pressing time is shortened.

[4B] In this step, the joined body of the terminal 21 and the electrode 5 obtained is heated.
Thereby, the joint strength between the terminal 21 and the electrode 5 can be further increased.
At this time, the temperature at the time of heating the joined body of the terminal 21 and the electrode 5 is not particularly limited as long as it is higher than room temperature and lower than the heat resistance temperature of the terminal 21 and the electrode 5, but preferably about 25 to 100 ° C. More preferably, the temperature is about 50 to 100 ° C. By heating at such a temperature, it is possible to reliably increase the bonding strength while reliably preventing the terminal 21 and the electrode 5 from being altered or deteriorated by heat. Further, under such a temperature, it is possible to reliably prevent the characteristics of the chip capacitor 6 from being altered.

The heating time is not particularly limited, but is preferably about 1 to 30 minutes.
Moreover, when performing both said process [4A] and [4B], it is preferable to perform these simultaneously. That is, it is preferable to heat the terminal 21 and the electrode 5 while applying pressure. Thereby, the effect by pressurization and the effect by heating are exhibited synergistically, and the joint strength between the terminal 21 and the electrode 5 can be particularly increased.
In addition, the above process can also be applied when mounting (mounting) the electrode 5 on the terminal 21 or after mounting as necessary.
By performing the steps as described above, it is possible to ensure a firm connection between the electrode 5 and the terminal 21.

<< Second Embodiment >>
Next, a second embodiment of the electronic circuit device of the present invention will be described.
FIG. 12 is a cross-sectional view showing a second embodiment of the electronic circuit device of the present invention. In the following, for convenience of explanation, the upper side in FIG. 12 is referred to as “upper” or “upper”, and the lower side is referred to as “lower” or “lower”.

Hereinafter, although the second embodiment will be described, the description will focus on the differences from the first embodiment, and the description of the same matters will be omitted.
In the second embodiment, the entire wiring pattern 2 is composed of the conductive bonding film 3 described in the first embodiment, and the electrode 5 is directly bonded to the terminal 21 provided in the wiring pattern 2. The same as in the first embodiment.

That is, in the electronic circuit device 10 ′ shown in FIG. 12, the wiring pattern 2 functions as a conductive electric wiring formed integrally with the terminal 21 and is joined to the electrode 5 at the terminal 21. It also functions as a bonding film.
In the electronic circuit device 10 ′ having such a configuration, the terminal 21 provided in the wiring pattern 2 is simply subjected to the same process as the process of causing the bonding film of the first embodiment to exhibit adhesion, whereby the terminal 21, the electrode 5, And the chip capacitor 6 can be firmly fixed to the wiring board 7. As a result, cracks in the chip capacitor 6 and peeling between the chip capacitor 6 and the wiring substrate 7 are surely prevented, and the reliability of the manufactured electronic circuit device 10 ′ is excellent. It will be a thing.

Further, such a wiring pattern 2 can be delicately patterned using an apparatus as shown in FIGS. 5 and 9 for forming the bonding film of the first embodiment. Therefore, a highly integrated and high density electronic circuit device 10 ′ can be obtained efficiently.
In the present embodiment, the average thickness of the terminal 21 (wiring pattern 2) is preferably about 1 to 1000 nm, and more preferably about 50 to 800 nm. Thereby, the bonding accuracy (mounting accuracy) of the chip capacitor 6 to the wiring substrate 7 is particularly excellent, and the electrode 5 and the terminal 21 are bonded more firmly (the chip capacitor 6 and the wiring substrate 7). be able to.

In addition, when the average thickness of the terminal 21 (wiring pattern 2) is less than the lower limit, depending on the material of the terminal 21 (wiring pattern 2), sufficient bonding strength may not be obtained. On the other hand, when the average thickness of the terminal 21 (wiring pattern 2) exceeds the upper limit, the resistivity of the terminal 21 tends to increase.
Furthermore, if the average thickness of the terminal 21 (wiring pattern 2) is within the above range, a certain degree of shape followability is ensured for the terminal 21. For this reason, for example, even when unevenness is present on the bonding surface (surface adjacent to the terminal 21) of the electrode 5 included in the chip capacitor 6, depending on the height of the unevenness, it follows the shape of the unevenness. The terminal 21 and the electrode 5 can be joined to each other. As a result, the terminal 21 can absorb the unevenness and reduce the height of the unevenness generated on the surface. And the adhesiveness of the terminal 21 and the electrode 5 can further be improved.

In addition, the degree of the shape followability as described above becomes more prominent as the thickness of the terminal 21 increases. Therefore, in order to sufficiently ensure the shape followability, the thickness of the terminal 21 (wiring pattern 2) is within a range in which a decrease in bonding accuracy between the chip capacitor 6 and the wiring board 7 that may occur depending on bonding conditions or the like is not recognized. Should be as thick as possible.
The chip capacitor 6 having the electrode 5 and the wiring substrate 7 having the wiring pattern 2 made of a conductive bonding film are the same as described in the first embodiment, that is, the step [1 ] To [3] (or the steps [1] to [4]), and as a result, the electronic circuit device 10 can be obtained.
In the present embodiment, the entire wiring pattern 2 is described as being configured by the conductive bonding film 3. However, the present invention is not limited thereto, and for example, only the terminal is configured by such a bonding film, and the wiring pattern terminal is formed. The other part may be a wiring pattern similar to the wiring pattern 2 described in the first embodiment.

<< Third Embodiment >>
Next, a third embodiment of the electronic circuit device of the present invention will be described.
FIG. 13 is a cross-sectional view showing a third embodiment of the electronic circuit device of the present invention, and FIG. 14 is a partially enlarged view showing a state before the energy is applied to the insulating bonding film in the electronic circuit device shown in FIG. 15 is a partially enlarged view showing a state after the energy is applied to the insulating bonding film in the electronic circuit device shown in FIG. 13, and FIG. 16 is used to manufacture the insulating bonding film in the electronic circuit device shown in FIG. FIG. 17 is a diagram schematically showing the plasma polymerization apparatus, and FIG. 17 is a diagram for explaining a method (manufacturing process) for the electronic circuit device shown in FIG. In the following, for convenience of explanation, the upper side in FIGS. 13 to 17 is referred to as “upper” or “upper”, and the lower side is referred to as “lower” or “lower”.

In the third embodiment, in addition to the bonding of the terminal 21 and the electrode 5, the main body portion 4 of the chip capacitor 6 and the substrate 1 of the wiring substrate 7 are further bonded. Otherwise, the same as in the second embodiment. It is.
That is, in the electronic circuit device 10 ″ shown in FIG. 13, the terminal 21 included in the wiring pattern 2 formed of the conductive bonding film 3 and the electrode 5 of the chip capacitor 6 are bonded, and the main body of the chip capacitor 6 4 and the substrate 1 of the wiring substrate 7 are bonded via the bonding film 8. Thereby, the bonding strength (bonding strength of the electronic circuit device 10 ") of the chip capacitor 6 and the wiring substrate 7 as a whole is further increased. Can be improved.

  Such a bonding film 8 can be composed of various adhesives such as a silicone adhesive, an acrylic adhesive, an epoxy adhesive, and a rubber adhesive, for example. It is preferable to use an insulating bonding film that exhibits adhesiveness (insulating bonding film). Since the bonding film 8 is insulative, it is possible to reliably prevent a short circuit (short circuit) between the pair of electrodes 5 provided on both ends of the main body 4. In addition, the electrical connection between the terminal 21 and the electrode 5 can be reliably ensured.

As this material, a material including a Si skeleton including a siloxane (Si—O) bond and a random atomic structure and a leaving group bonded to the Si skeleton is preferably used.
In a state before applying energy, the bonding film 8 made of such a material includes a Si skeleton 801 including a siloxane (Si—O) bond 802 and a random atomic structure, as shown in FIG. And a leaving group 803 bonded to the Si skeleton 801.

When energy is applied to the bonding film 8, as shown in FIG. 15, a part of the leaving group 803 is detached from the Si skeleton 801, and an active hand 804 is generated instead. Thereby, adhesiveness is expressed on the surface 85 of the bonding film 8. Thus, the board | substrate 1 and the main-body part 4 are joined by the joining film | membrane 8 which adhesiveness expressed.
Such a bonding film 8 becomes a strong film that is difficult to be deformed due to the influence of the Si skeleton 801 including the siloxane bond 802 and having a random atomic structure. For this reason, the distance between the board | substrate 1 and the main-body part 4, ie, the distance between the chip capacitor 6 and the wiring board 7, can be kept constant with high dimensional accuracy.

Further, since the substrate 1 and the main body portion 4 are bonded using the bonding film 8, it is possible to prevent a problem that the adhesive protrudes when bonded using the adhesive. Therefore, there is an advantage that the trouble of removing the protruding adhesive can be omitted.
Further, such a bonding film 8 is a solid having no fluidity. For this reason, the thickness and shape of the adhesive layer (bonding film 8) hardly change compared to the case of using a liquid or viscous liquid adhesive. For this reason, the dimensional accuracy of the electronic circuit device 10 ″ manufactured using the bonding film 8 is remarkably high. Further, compared with the case where an adhesive is used, the time required for curing is not required. Therefore, it is possible to achieve strong bonding in a short time.

  As such a bonding film 8, among the atoms obtained by removing H atoms from all atoms constituting the bonding film 8, the total content of Si atoms and O atoms is about 10 to 90 atomic%. It is preferable and it is more preferable that it is about 20-80 atomic%. If Si atoms and O atoms are contained in the above range, the bonding film 8 forms a strong network between the Si atoms and the O atoms, and the bonding film 8 itself becomes stronger. . Further, the bonding film 8 exhibits a particularly high bonding strength with respect to the substrate 1 and the main body portion 4.

The abundance ratio of Si atoms and O atoms in the bonding film 8 is preferably about 3: 7 to 7: 3, and more preferably about 4: 6 to 6: 4. By setting the abundance ratio of Si atoms and O atoms to be in the above range, the stability of the bonding film 8 is increased, and the substrate 1 and the main body 4 can be bonded more firmly.
Note that the crystallinity of the Si skeleton 801 in the bonding film 8 is preferably 45% or less, and more preferably 40% or less. As a result, the Si skeleton 801 includes a sufficiently random atomic structure. For this reason, the characteristics of the Si skeleton 801 described above become obvious, and the dimensional accuracy and adhesiveness of the bonding film 8 become more excellent.

  Further, as described above, the leaving group 803 bonded to the Si skeleton 801 behaves so as to generate an active hand 804 in the bonding film 8 by detaching from the Si skeleton 801. Therefore, although the leaving group 803 is relatively easily and uniformly desorbed by being given energy, it is securely bonded to the Si skeleton 801 so as not to be desorbed when no energy is given. It needs to be a thing.

  From this point of view, the leaving group 803 includes an H atom, a B atom, a C atom, an N atom, an O atom, a P atom, an S atom, and a halogen atom, or each of these atoms. What consists of at least 1 sort (s) selected from the group which consists of an atomic group arrange | positioned so that it may couple | bond with frame | skeleton 801 is used preferably. Such a leaving group 803 is relatively excellent in selectivity for binding / leaving due to energy application. For this reason, such a leaving group 303 can sufficiently satisfy the above-described necessity, and the adhesiveness of the bonding film 8 can be made higher.

  Examples of the atomic group (group) arranged so that each atom as described above is bonded to the Si skeleton 801 include, for example, an alkyl group such as a methyl group and an ethyl group, an alkenyl group such as a vinyl group and an allyl group. Aldehyde group, ketone group, carboxyl group, amino group, amide group, nitro group, halogenated alkyl group, mercapto group, sulfonic acid group, cyano group, isocyanate group and the like.

Among these groups, the leaving group 803 is particularly preferably an alkyl group. Since the alkyl group has high chemical stability, the bonding film 8 including the alkyl group has excellent weather resistance (with respect to the environment in which the electronic circuit device 10 ″ is used).
Examples of the constituent material of the bonding film 8 having such characteristics include a polymer containing a siloxane bond such as polyorganosiloxane.

The bonding film 8 made of polyorganosiloxane itself has excellent mechanical properties. In addition, it exhibits particularly excellent adhesion to many materials. Therefore, the bonding film 8 made of polyorganosiloxane can bond the substrate 1 and the main body 4 more firmly.
Polyorganosiloxane usually exhibits water repellency (non-adhesiveness), but when given energy, it can easily desorb organic groups, changes to hydrophilicity, and exhibits adhesiveness. However, there is an advantage that the non-adhesiveness and the adhesiveness can be controlled easily and reliably.

  This water repellency (non-adhesiveness) is mainly due to the action of alkyl groups contained in the polyorganosiloxane. Therefore, the bonding film 8 made of polyorganosiloxane exhibits adhesiveness in a region to which energy is applied, and has excellent liquid repellency due to the aforementioned alkyl group in a region to which energy is not applied. Has the advantage of being Therefore, even when the electronic circuit device 10 is used in a place where the humidity is relatively high, the bonding property between the chip capacitor 6 and the wiring substrate 7 can be maintained in a high state, and the durability of the electronic circuit device 10 is further improved. Can be.

  Further, among polyorganosiloxanes, those mainly composed of a polymer of octamethyltrisiloxane are preferred. Since the bonding film 8 mainly composed of a polymer of octamethyltrisiloxane is particularly excellent in adhesiveness, it can be particularly suitably applied to the bonding between the substrate 1 and the main body 4. Moreover, since the raw material which has octamethyltrisiloxane as a main component is liquid at normal temperature and has an appropriate viscosity, there is an advantage that it is easy to handle.

The bonding film 8 is preferably thicker than the wiring pattern 2 (terminal 21). Thereby, the chip capacitor 6 and the wiring board 7 can be bonded more firmly.
Such a bonding film 8 may be produced by any method, such as a film produced by various vapor deposition methods such as plasma polymerization, CVD, PVD, or various liquid deposition methods. Although it can produce by giving energy, Among these, it is preferable to use the film | membrane produced by the plasma polymerization method. According to the plasma polymerization method, finally, a dense and homogeneous bonding film 8 can be efficiently produced. As a result, the bonding film 8 produced by the plasma polymerization method can bond the substrate 1 and the main body 4 particularly firmly. Further, since the substrate 1 and the main body 4 are bonded by the dense bonding film 8, the durability of the electronic circuit device 10 "is further improved, and the reliability of the electronic circuit device 10" is further improved. Can do. Furthermore, the bonding film 8 manufactured by the plasma polymerization method can be maintained in a state where energy is applied and activated for a relatively long time. For this reason, it is possible to simplify and improve the manufacturing process of the electronic circuit device 10 ″.

  Next, as an example, the bonding film 8 is formed by plasma polymerization in a region where the wiring pattern 2 is not provided on the upper surface of the substrate 1 (the surface of the substrate 1 on which the wiring pattern 2 is formed). The method of manufacturing the electronic circuit device 10 ″ by joining the substrate 1 and the main body 4 of the chip capacitor 6 will now be described. The plasma polymerization method uses, for example, a source gas and a carrier gas in a strong electric field. By supplying a mixed gas, molecules in the raw material gas are polymerized, and the polymer is deposited on the upper surface of the substrate 1 (wiring substrate 7) to obtain a film.

Hereinafter, a method of forming the bonding film 8 by the plasma polymerization method will be described in detail. First, prior to explaining the method of forming the bonding film 8, the bonding film 8 is formed by performing the plasma polymerization method on the upper surface of the substrate 1. A plasma polymerization apparatus used for manufacturing the electronic circuit device 10 ″ including a method for forming the bonding film 8 will be described.
The plasma polymerization apparatus 100 shown in FIG. 16 applies a high-frequency voltage between the chamber 101, the first electrode 130 that supports the substrate 1 (wiring substrate 7), the second electrode 140, and the electrodes 130 and 140. A power supply circuit 180, a gas supply unit 190 that supplies gas into the chamber 101, and an exhaust pump 170 that exhausts the gas in the chamber 101 are provided. Among these parts, the first electrode 130 and the second electrode 140 are provided in the chamber 101. Hereinafter, each part will be described in detail.

The chamber 101 is a container that can keep the inside airtight, and is used with the inside being in a reduced pressure (vacuum) state. Therefore, the chamber 101 has pressure resistance that can withstand a pressure difference between the inside and the outside.
The chamber 101 shown in FIG. 16 has a substantially cylindrical chamber body whose axis is arranged along the horizontal direction, a circular side wall that seals the left-side opening of the chamber body, and a circle that seals the right-side opening. And side walls.

A supply port 103 is provided above the chamber 101, and an exhaust port 104 is provided below the chamber 101. A gas supply unit 190 is connected to the supply port 103, and an exhaust pump 170 is connected to the exhaust port 104.
In this embodiment, the chamber 101 is made of a highly conductive metal material and is electrically grounded via the ground wire 102.

The first electrode 130 has a plate shape and supports the substrate 1.
The first electrode 130 is provided on the inner wall surface of the side wall of the chamber 101 along the horizontal direction. Further, the first electrode 130 is electrically grounded through the chamber 101.
An electrostatic chuck (suction mechanism) 139 is provided on the surface of the first electrode 130 that supports the substrate 1.
The electrostatic chuck 139 can hold the substrate 1 as shown in FIG. Further, even if the substrate 1 has a slight warp, the substrate 1 can be subjected to plasma processing with the warp being corrected by being attracted to the electrostatic chuck 139.

The second electrode 140 is provided to face the first electrode 130 with the substrate 1 interposed therebetween. Note that the second electrode 140 is provided in a state of being separated (insulated) from the inner wall surface of the side wall of the chamber 101.
A high frequency power source 182 is connected to the second electrode 140 via a wiring 184. A matching box (matching unit) 183 is provided in the middle of the wiring 184. The wiring 184, the high-frequency power source 182 and the matching box 183 constitute a power circuit 180.
According to such a power supply circuit 180, since the first electrode 130 is grounded, a high frequency voltage is applied between the first electrode 130 and the second electrode 140. As a result, an electric field whose direction is reversed at a high frequency is induced in the gap between the first electrode 130 and the second electrode 140.

The gas supply unit 190 supplies a predetermined gas into the chamber 101.
A gas supply unit 190 illustrated in FIG. 16 stores a liquid storage unit 191 that stores a liquid film material (raw material liquid), a vaporizer 192 that vaporizes the liquid film material to change it into a gaseous state, and stores a carrier gas. And a gas cylinder 193. Each of these parts and the supply port 103 of the chamber 101 are connected by a pipe 194, and a mixed gas of a gaseous film material (raw material gas) and a carrier gas is supplied from the supply port 103 into the chamber 101. It is configured to supply.

The liquid film material stored in the liquid storage unit 191 is a raw material that is polymerized by the plasma polymerization apparatus 100 to form a polymer film on the surface of the substrate 1 (substrate 1).
Such a liquid film material is vaporized by the vaporizer 192 and is supplied into the chamber 101 as a gaseous film material (raw material gas). The source gas will be described in detail later.

The carrier gas stored in the gas cylinder 193 is a gas that is discharged due to the action of an electric field and introduced to maintain this discharge. Examples of such a carrier gas include Ar gas and He gas.
A diffusion plate 195 is provided near the supply port 103 in the chamber 101.

The diffusion plate 195 has a function of promoting the diffusion of the mixed gas supplied into the chamber 101. Thereby, the mixed gas can be dispersed in the chamber 101 with a substantially uniform concentration.
The exhaust pump 170 exhausts the inside of the chamber 101, and includes, for example, an oil rotary pump, a turbo molecular pump, or the like. Thus, by exhausting the chamber 101 and reducing the pressure, the gas can be easily converted into plasma. Further, contamination and oxidation of the substrate 1 due to contact with the air atmosphere can be prevented, and reaction products resulting from the plasma treatment can be effectively removed from the chamber 101.
The exhaust port 104 is provided with a pressure control mechanism 171 that adjusts the pressure in the chamber 101. Thereby, the pressure in the chamber 101 is appropriately set according to the operation state of the gas supply unit 190.

Next, a method for manufacturing the electronic circuit device 10 ″ of this embodiment, that is, a method for bonding the wiring board 7 and the chip capacitor 6 will be described.
[1 ″] First, in the same manner as in the second embodiment, a wiring substrate 7 is prepared in which the wiring pattern 2 composed of the conductive bonding film 3 is integrally formed on the substrate 1. Then, a mask is formed on the surface of the substrate 1 on the side where the wiring pattern 2 is provided, except for the region where the insulating bonding film 8 is formed as described above. After being housed in 101 and sealed, the inside of the chamber 101 is depressurized by the operation of the exhaust pump 170.

Then, the gas supply unit 190 is operated to supply the mixed gas of the source gas and the carrier gas into the chamber 101. The supplied mixed gas is filled in the chamber 101.
Here, the ratio (mixing ratio) of the source gas in the mixed gas is slightly different depending on the type of the source gas and the carrier gas, the target film forming speed, and the like. For example, the ratio of the source gas in the mixed gas is 20 It is preferable to set to about -70%, and it is more preferable to set to about 30-60%. As a result, it is possible to optimize the conditions for formation (film formation) of the polymer film.

Further, the flow rate of the gas to be supplied is appropriately determined depending on the type of gas, the target film formation rate, the film thickness, etc., and is not particularly limited, but usually the flow rates of the source gas and the carrier gas are respectively , Preferably about 1 to 100 ccm, more preferably about 10 to 60 ccm.
Next, the power supply circuit 180 is activated, and a high frequency voltage is applied between the pair of electrodes 130 and 140. As a result, gas molecules existing between the pair of electrodes 130 and 140 are ionized to generate plasma. Molecules in the raw material gas are polymerized by the energy of the plasma, and the polymer is deposited and deposited on the substrate 1. As a result, as shown in FIG. 17A, a bonding film 8 made of a plasma polymerization film is formed on the substrate 1.

Examples of the source gas include organosiloxanes such as methylsiloxane, octamethyltrisiloxane, decamethyltetrasiloxane, decamethylcyclopentasiloxane, octamethylcyclotetrasiloxane, and methylphenylsiloxane.
The plasma polymerized film obtained by using such a raw material gas, that is, the bonding film 8 is composed of a polymer obtained by polymerizing these raw materials, that is, a polyorganosiloxane.

In the plasma polymerization, the frequency of the high frequency applied between the pair of electrodes 130 and 140 is not particularly limited, but is preferably about 1 kHz to 100 MHz, and more preferably about 10 to 60 MHz.
Further, the power density of the high frequency is not particularly limited, and is preferably about 0.01 to 10 / cm ^2, more preferably about 0.1 to 1 W / cm ^2.
Further, the pressure in the chamber 101 during film formation is preferably about 133.3 × 10 ^{−5 to} 1333 Pa (1 × 10 ^{−5 to} 10 Torr), and 133.3 × 10 ^{−4 to} 133.3 Pa ( More preferably, it is about 1 × 10 ^{−4 to} 1 Torr).

The raw material gas flow rate is preferably about 0.5 to 200 sccm, and more preferably about 1 to 100 sccm. On the other hand, the carrier gas flow rate is preferably about 5 to 750 sccm, and more preferably about 10 to 500 sccm.
The treatment time is preferably about 1 to 10 minutes, more preferably about 4 to 7 minutes. Note that the thickness of the bonding film 8 to be formed is mainly proportional to the processing time. Therefore, the thickness of the bonding film 8 can be easily adjusted only by adjusting the processing time.
Moreover, it is preferable that the temperature of the board | substrate 1 (wiring board 7) is 25 degreeC or more, and it is more preferable that it is about 25-100 degreeC.
As described above, the bonding film 8 can be obtained. Thereafter, the formed mask is removed using various etching methods.

[2 ″] Next, energy is applied to the terminal 21 and the bonding film 8 provided on the wiring substrate 7 on which the bonding film 8 is formed (see FIG. 17B).
When energy is applied, the leaving group 803 is detached from the Si skeleton 801 in the bonding film 8 as shown in FIG. Then, after the leaving group 803 is removed, active hands 804 are generated on the surface and inside of the bonding film 8 as shown in FIG. Thereby, adhesiveness is developed on the surface (upper surface) of the bonding film 8. At this time, as described in the first embodiment, adhesiveness is also exhibited on the surface (upper surface) of the terminal 21 formed of the bonding film 3.
Here, the same method as described in the first embodiment can be used for applying energy.

  [3 ″] Next, the chip capacitor 6 is prepared. As shown in FIG. 17C, the electrode 5 and the terminal 21 are brought into close contact with each other, and the main body 4 and the bonding film 8 are also attached. The chip capacitor 6 and the wiring board 7 are brought into contact with each other such that the electrode 5 is electrically bonded to the terminal 21, and the main body 4 is interposed via the bonding film 8. Thus, the electronic circuit device 10 ″ as shown in FIG. 17D is obtained by bonding to the substrate 1 (wiring substrate 7).

The bonding film 8 may be provided on the lower surface of the main body 4 of the chip capacitor 6 instead of the upper surface of the substrate 1, or may be provided on both the upper surface of the substrate 1 and the lower surface of the main body 4. Good.
Here, when the thermal expansion coefficients of the substrate 1 and the main body 4 are different from each other, it is preferable to optimize the conditions for bonding the substrate 1 and the main body 4 as follows. Thereby, the chip capacitor 6 can be firmly bonded to the wiring substrate 7 with high dimensional accuracy.

For example, when the thermal expansion coefficients of the substrate 1 and the main body 4 are different from each other, it is preferable to perform bonding at as low a temperature as possible. By performing the bonding at a low temperature, it is possible to further reduce the thermal stress generated at the bonding interface.
Specifically, although depending on the difference in thermal expansion coefficient between the substrate 1 and the main body 4, the substrate 1 and the main body 4 are placed under the state where the temperature of the substrate 1 and the main body 4 is about 25 to 50 ° C. It is preferable to bond together, and it is more preferable to bond together in the state which is about 25-40 degreeC. Within such a temperature range, even if the difference in thermal expansion coefficient between the substrate 1 and the main body 4 is large to some extent, the thermal stress generated at the bonding interface can be sufficiently reduced. As a result, it is possible to reliably prevent the occurrence of warpage or peeling in the electronic circuit device 10 ″.

In this case, when the difference in thermal expansion coefficient between the substrate 1 and the main body 4 is 5 × 10 ⁻⁵ / K or more, the bonding is performed as low as possible as described above. It is particularly recommended. By using the bonding film 8, the substrate 1 and the main body 4 (wiring substrate 7 and chip capacitor 6) can be firmly bonded even at a low temperature as described above.
Moreover, it is preferable that the board | substrate 1 and the main-body part 4 mutually differ in rigidity. As a result, even if thermal stress is generated at the bonding interface, the thermal stress is absorbed by one of the substrate 1 and the main body 4 and the substrate 1 and the main body 4 can be bonded more firmly. .

Further, when the thermal expansion coefficients of the substrate 1 and the main body 4 are different from each other, for example, the thermal expansion coefficient of the bonding film 8 is adjusted between the thermal expansion coefficient of the substrate 1 and the thermal expansion coefficient of the main body 4. You may make it do. Thereby, even when the electronic circuit device 10 ″ is thermally expanded, the separation between the wiring board 7 and the chip capacitor 6 can be more reliably prevented.
The thermal expansion coefficient of the bonding film 8 can be adjusted by appropriately setting the ratio of raw materials at the time of film formation, film formation conditions, and the like.
Needless to say, such a bonding film 8 can be applied not only to the electronic circuit device of the second embodiment but also to the electronic circuit device of the first embodiment.

<Electronic equipment>
Next, an electronic apparatus of the present invention including the electronic circuit device 10 (10, 10 ′, 10 ″) described above will be described.
In the following, a mobile phone will be described as a representative example of the electronic apparatus of the present invention.
FIG. 18 is a perspective view showing an embodiment of a mobile phone.
A mobile phone shown in FIG. 18 includes a mobile phone main body 1000 including a display unit 1001. The mobile phone body 1000 incorporates the electronic circuit device 10 described above, and these are used as optical signal output means or the like in the mobile phone body 1000.

The electronic circuit device 10 can be applied to various electronic devices in addition to the mobile phone described in FIG.
For example, optical fiber communication module, laser printer, laser beam projector, laser beam scanner, linear encoder, rotary encoder, displacement sensor, pressure sensor, gas sensor, blood blood flow sensor, fingerprint sensor, high-speed electrical modulation circuit, wireless RF circuit, wireless It can also be applied to a LAN or the like.

  As described above, the electronic circuit device 10 is not exposed to a high temperature (about 260 ° C.) as in the solder reflow process, and the electrode capacitor 5 and the terminal 21 are firmly bonded, so that the chip capacitor 6 is wired. It is fixed to the substrate 7. Such an electronic circuit device 10 has a high reliability in which the occurrence of cracks is suppressed. Therefore, an electronic device equipped with such an electronic circuit device 10 is highly reliable with the occurrence of malfunctions suppressed for a long period of time regardless of the usage environment.

As mentioned above, although the electronic circuit device and the electronic device of the present invention have been described with respect to the illustrated embodiment, the present invention is not limited to this, and each part constituting the electronic circuit device and the electronic device has the same function. It can be replaced with any configuration that can be exhibited. Moreover, arbitrary components may be added.
For example, the electronic circuit device and the electronic apparatus of the present invention may be a combination of any two or more configurations (features) of the above embodiments.
In the above description, the case where a chip capacitor is used as the electronic component has been described. However, the electronic component constituting the electronic circuit device of the present invention (mounted on the electronic circuit device) is not limited to this. For example, a chip resistor, a chip inductor, a diode, or a transistor can be suitably used instead of the chip capacitor.

1 is a top view showing a first embodiment of an electronic circuit device of the present invention. It is the sectional view on the AA line of the electronic circuit device shown in FIG. It is the elements on larger scale which show the state before the energy provision of the joining film | membrane of the structure of I in the electronic circuit device shown in FIG. It is the elements on larger scale which show the state after the energy provision of the joining film | membrane of the structure of I in the electronic circuit device shown in FIG. 1 is a longitudinal sectional view schematically showing a film forming apparatus used when forming a bonding film having a configuration I. FIG. It is a schematic diagram which shows the structure of the ion source with which the film-forming apparatus shown in FIG. 5 is provided. It is the elements on larger scale which show the state before the energy provision of the joining film of the structure of II. It is the elements on larger scale which show the state after the energy provision of the joining film of the structure of II. It is a longitudinal cross-sectional view which shows typically the film-forming apparatus used when forming the joining film | membrane of the structure of II. It is a figure for demonstrating the manufacturing method (manufacturing process) of the electronic circuit device of 1st Embodiment. It is a figure for demonstrating the manufacturing method (manufacturing process) of the electronic circuit device of 1st Embodiment. It is a cross-sectional view showing a second embodiment of the electronic circuit device of the present invention. It is a cross-sectional view showing a third embodiment of the electronic circuit device of the present invention. It is the elements on larger scale which show the state before energy provision of the joining film in the electronic circuit device shown in FIG. It is the elements on larger scale which show the state after the energy provision of the bonding film in the electronic circuit device shown in FIG. It is a figure which shows typically the plasma polymerization apparatus used for preparation of the insulating joining film in the electronic circuit apparatus shown in FIG. It is a figure for demonstrating the manufacturing method (manufacturing process) of the electronic circuit apparatus shown in FIG. It is a perspective view which shows embodiment of a mobile telephone.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Wiring pattern 21 ... Terminal (first terminal) 3 ... Bonding film (conductive bonding film) 303 ... Leaving group 304 ... Active hand 35 ... Surface 4 ... Body 5 ... Electrode (second terminal) 6 ... Chip capacitor 7 ... Wiring substrate 8 ... Bonding film (insulating bonding film) 85 ... Surface 10, 10 ', 10 "... Electronic circuit device 200 ... Deposition apparatus 211 ... Chamber 212 ... Substrate holder 215 ... Ion source 216 ... Target 217 ... Target holder 219 ... Gas supply source 220 ... First shutter 221 ... Second shutter 230 ... Exhaust Means 231 ... Exhaust line 232 ... Pump 233 ... Valve 250 ... Opening 253 ... Grid 254 ... Grid 255 ... Magnet 256 ... Ion generation Chamber 257 ... Filament 260 ... Gas supply means 261 ... Gas supply line 262 ... Pump 263 ... Valve 264 ... Gas cylinder 500 ... Deposition device 511 ... Chamber 512 ... Substrate holder 521 ... Shutter 530 ... ... exhaust means 531 ... exhaust line 532 ... pump 533 ... valve 560 ... organometallic material supply means 561 ... gas supply line 562 ... storage tank 563 ... valve 564 ... pump 565 ... gas cylinder 570 ... Gas supply means 571 …… Gas supply line 573 …… Valve 574 …… Pump 575 …… Gas cylinder 801 …… Si bond 802 …… Siloxane (Si—O) bond 803 …… Leaving group 804 …… Active hand 100 …… Plasma polymerization equipment 101 …… Chamber 102 …… Grounding wire 103 …… Supply port 104 …… Exhaust port 130 …… First electrode 139 …… Electrostatic chuck 140 …… Second electrode 170 …… Exhaust pump 171 …… Pressure control mechanism 180 …… Power supply Circuit 182 ... High frequency power supply 183 ... Matching box 184 ... Wiring 190 ... Gas supply part 191 ... Liquid storage part 192 ... Vaporizer 193 ... Gas cylinder 194 ... Pipe 195 ... Diffuser 1000 ... Mobile phone body 1001 ... Display section

Claims (32)

A wiring board having a flat substrate and an electric wiring provided with a first terminal that is provided on one surface side of the substrate and patterned into a predetermined shape;
An electronic component having a second terminal,
The electronic component is fixed to the wiring substrate by bonding the first terminal and the second terminal with a conductive bonding film,
The bonding film includes a metal atom, an oxygen atom bonded to the metal atom, and a leaving group bonded to at least one of the metal atom and the oxygen atom,
The bonding film imparts energy to at least a part of the bonding film, so that the leaving group existing near the surface of the bonding film is released from at least one of the metal atom and the oxygen atom, and the bonding film An electronic circuit device characterized in that the first terminal and the second terminal are bonded together by adhesiveness developed in the region on the surface of the film. A wiring board having a flat substrate and an electric wiring provided with a first terminal that is provided on one surface side of the substrate and patterned into a predetermined shape;
An electronic component having a second terminal,
The first terminal is composed of a conductive bonding film, and the electronic component is fixed to the wiring board by bonding the first terminal to the second terminal.
The bonding film includes a metal atom, an oxygen atom bonded to the metal atom, and a leaving group bonded to at least one of the metal atom and the oxygen atom,
The bonding film imparts energy to at least a part of the bonding film, so that the leaving group existing near the surface of the bonding film is released from at least one of the metal atom and the oxygen atom, and the bonding film An electronic circuit device, wherein the electronic circuit device is bonded to the second terminal by adhesiveness developed in the region of the surface of the film.   The electronic circuit device according to claim 2, wherein the electrical wiring is formed of a bonding film similar to the bonding film and is formed integrally with the first terminal.   The electronic circuit device according to claim 1, wherein the metal atom is at least one of indium, tin, zinc, titanium, and antimony.   The leaving group is at least one of a hydrogen atom, a carbon atom, a nitrogen atom, a phosphorus atom, a sulfur atom and a halogen atom, or an atomic group composed of each of these atoms. An electronic circuit device according to claim 1. The bonding film includes indium tin oxide (ITO), indium zinc oxide (IZO), antimony tin oxide (ATO), fluorine-containing indium tin oxide (FTO), zinc oxide (ZnO), or titanium dioxide (TiO _2). 6) An electronic circuit device according to any one of claims 1 to 5, wherein a hydrogen atom is introduced as a leaving group.   The electronic circuit device according to any one of claims 1 to 6, wherein an abundance ratio of metal atoms to oxygen atoms in the bonding film is 3: 7 to 7: 3. A wiring board having a flat substrate and an electric wiring provided with a first terminal that is provided on one surface side of the substrate and patterned into a predetermined shape;
An electronic component having a second terminal,
The electronic component is fixed to the wiring substrate by bonding the first terminal and the second terminal with a conductive bonding film,
The bonding film includes a metal atom and a leaving group composed of an organic component,
By applying energy to at least a part of the bonding film, the leaving group existing near the surface of the bonding film is released from the bonding film and is expressed in the region on the surface of the bonding film. The electronic circuit device is characterized in that the first terminal and the second terminal are bonded to each other by adhesion. A wiring board having a flat substrate and an electric wiring provided with a first terminal that is provided on one surface side of the substrate and patterned into a predetermined shape;
An electronic component having a second terminal,
The first terminal is composed of a conductive bonding film, and the electronic component is fixed to the wiring board by bonding the first terminal to the second terminal.
The bonding film includes a metal atom and a leaving group composed of an organic component,
By applying energy to at least a part of the bonding film, the leaving group existing near the surface of the bonding film is released from the bonding film and is expressed in the region on the surface of the bonding film. The electronic circuit device is bonded to the second terminal by adhesiveness.   The electronic circuit device according to claim 9, wherein the electrical wiring is formed of a bonding film similar to the bonding film, and is formed integrally with the first terminal.   11. The electronic circuit device according to claim 8, wherein the bonding film is formed by using a metal organic chemical vapor deposition method using an organic metal material as a raw material.   The electronic circuit device according to claim 8, wherein the bonding film is formed in a low reducing atmosphere.   The electronic circuit device according to any one of claims 8 to 12, wherein the leaving group is a residue of a part of an organic substance contained in the organometallic material.   The said leaving group is a carbon atom as an essential component, and is composed of an atomic group containing at least one of a hydrogen atom, a nitrogen atom, a phosphorus atom, a sulfur atom and a halogen atom. The electronic circuit device described.   The electronic circuit device according to claim 14, wherein the leaving group is an alkyl group.   The electronic circuit device according to claim 8, wherein the organometallic material is a metal complex.   The electronic circuit device according to claim 8, wherein the metal atom is at least one of copper, aluminum, zinc, and iron.   18. The electronic circuit device according to claim 8, wherein an abundance ratio of metal atoms to carbon atoms in the bonding film is 3: 7 to 7: 3.   The electronic circuit device according to claim 1, wherein the electronic component is a chip capacitor, a chip resistor, a chip inductor, a transistor, or a diode.   20. The electronic circuit device according to claim 1, wherein an active hand is generated after the leaving group present at least near the surface of the bonding film is released from the bonding film.   21. The electronic circuit device according to claim 20, wherein the active hand is a dangling bond or a hydroxyl group.   The electronic circuit device according to claim 1, wherein an average thickness of the bonding film is 50 to 1000 nm.   23. The electronic circuit device according to claim 1, wherein the bonding film is in a solid state having no fluidity.   The electronic circuit device according to any one of claims 1 to 23, wherein at least one surface in contact with the bonding film is previously subjected to a surface treatment for improving adhesion with the bonding film.   The electronic circuit device according to claim 24, wherein the surface treatment is a plasma treatment.   The energy is applied by at least one of a method of irradiating the bonding film with energy rays, a method of heating the bonding film, and a method of applying a compressive force to the bonding film. The electronic circuit device according to any one of 25.   27. The electronic circuit device according to claim 26, wherein the energy beam is an ultraviolet ray having a wavelength of 126 to 300 nm.   The electronic circuit device according to claim 26 or 27, wherein the heating temperature is 25 to 100 ° C.   29. The electronic circuit device according to claim 26, wherein the compressive force is 0.2 to 10 MPa.   30. The electronic circuit device according to claim 26, wherein the application of energy is performed in an air atmosphere. And an insulating bonding film for bonding the wiring board and the electronic component,
The bonding film includes a Si skeleton including a siloxane (Si-O) bond and a random atomic structure, and a leaving group bonded to the Si skeleton,
The insulating bonding film joins the wiring board and the electronic component by applying an energy to at least a part of the insulating bonding film, and adhesiveness developed in the region of the surface of the bonding film. Item 31. The electronic circuit device according to any one of Items 1 to 30.   An electronic apparatus comprising the electronic circuit device according to claim 1.

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