JP2009155705A - Heat treatment method and barrier film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heat treatment method where, when a resin film is used for a substrate, an inorganic film can be heat-treated without causing deterioration, deformation or the like in the resin film, and to provide a barrier film. <P>SOLUTION: The heat treatment method includes a process where, under the conditions in which, on the surface of a substrate made of a resin film, an infrared ray cut layer suppressing arrival of infrared rays at the substrate is formed, and an inorganic film is formed on the surface of the infrared ray cut layer, the inorganic film is irradiated with infrared rays, and heat treatment is performed. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a heat treatment method and a barrier film for heat-treating an inorganic film formed on a substrate, and in particular, when a resin film is used for the substrate, the inorganic film is heat-treated without causing alteration or deformation of the resin film. The present invention relates to a heat treatment method and a barrier film.

  Currently, in a semiconductor process, a film formed by a PVD method or a CVD method is subjected to post-heat treatment at around several hundred to 1000 ° C., thereby reducing the structural defects of the film formed at the time of film formation and improving the film quality. The method is generally used, and various methods for improving the film quality have been proposed (for example, see Patent Documents 1 to 3).

In the infrared annealing method of Patent Document 1, light that can absorb light energy from a lamp for RTA (Rapid Thermal Annealing) is used as an annealing process for the silicon layer on the surface side of the transparent substrate on which the matrix array is to be formed. It is disclosed that the RTA process is performed in a state where the absorption layer is provided in a predetermined region on the surface side of the transparent substrate.
According to the infrared annealing method of Patent Document 1, since the surface layer of the silicon substrate can be heated in a high temperature and in a short time, the activation process is performed without diffusion (distribution change) of the impurity atoms implanted into the silicon substrate. Can be done.
As disclosed in Patent Document 1, a method using infrared annealing is widely used.

In the method of manufacturing a semiconductor element of Patent Document 2, a PZT thin film is formed at a temperature of about 350 to 450 ° C. to form a film composed of about 300 mm of grains, and further at a temperature of 600 ° C. to 700 ° C. There has been disclosed a technique in which a ferroelectric film is formed by a short-time heat treatment without increasing the grain size by performing rapid thermal annealing.
According to Patent Document 2, since the PZT film is made a ferroelectric film in a short time using RTA, Pb mainly precipitates around two or more grains by a long-time heat treatment, and the grain is apparently large. This can prevent the occurrence of lattice defects due to the phenomenon or the insufficient Pb composition in the grains.

  Further, in the method of manufacturing the nonvolatile semiconductor memory device of Patent Document 3, in the method of forming an ONO laminated structure insulating film between the floating gate electrode and the control gate electrode, on the floating gate electrode made of a polysilicon film. It is disclosed that a bottom oxide film is formed by an RTA (Rapid Thermal Anneal) process.

JP-A-5-53143 JP-A-6-283668 JP-A-9-205157

Currently, as a film forming apparatus for continuously forming a film on a long substrate (web-like substrate) by, for example, plasma CVD in a vacuum atmosphere chamber, for example, a grounded (earth) drum and this drum There is known an apparatus using an electrode connected to a high-frequency power source arranged so as to face to each other.
In this film forming apparatus, a long substrate is transported to a drum by a transport roller, the substrate is wound around a predetermined area of the drum, and the drum is rotated, so that the substrate is positioned at a predetermined film forming position in the longitudinal direction. While conveying, a high frequency voltage is applied between the drum and the electrode to form an electric field, and between the drum and the electrode, a raw material gas for film formation, further introducing an argon gas, Film formation by plasma CVD is performed on the surface of the substrate, and the long substrate after film formation is conveyed by another conveyance roller. This film forming apparatus is generally called a roll-to-roll system.

In this film forming apparatus, when a resin film is used for the substrate, after the inorganic film is formed on the substrate, the heat treatment is disclosed in, for example, Patent Documents 1 to 3 in order to improve the film quality of the inorganic film. When annealing or the like is performed, the resin film has a glass transition temperature (Tg) around 100 ° C., unlike a silicon substrate. Therefore, the inorganic film formed on the surface without affecting the quality of the resin film as the substrate. It is extremely difficult to heat only the film at a high temperature.
For example, if heat treatment is performed on the resin film that is a substrate in the temperature range disclosed in Patent Documents 1 to 3, the resin film is deformed or melted. Therefore, when a resin film is used for the substrate, a method of heating only the inorganic film formed on the surface without increasing the temperature of the resin film and performing a heat treatment without adversely affecting the substrate is desired. It is rare.

  An object of the present invention is to solve the problems based on the prior art, and when a resin film is used as a substrate, a heat treatment method and a heat treatment method capable of heat treating an inorganic film without causing alteration or deformation of the resin film and It is to provide a barrier film.

  In order to achieve the above object, according to the first aspect of the present invention, an infrared cut layer that suppresses infrared rays from reaching the substrate is formed on the surface of the resin film substrate, and the surface of the infrared cut layer is formed on the surface. An inorganic film is formed, and there is provided a heat treatment method comprising a step of performing heat treatment by irradiating the inorganic film with infrared rays.

In this invention, it is preferable to have the process of forming the said infrared cut layer on the surface of the said board | substrate.
Moreover, in the present invention, it is preferable that the infrared ray is in the near infrared region.
Furthermore, in this invention, when heat-treating the said inorganic film | membrane, it is preferable to hold | maintain the said resin film board | substrate at the temperature below a glass transition temperature.
Furthermore, in the present invention, the infrared cut layer is preferably formed by a coating method.

  The 2nd aspect of this invention was formed in the surface of the board | substrate made from a resin film, the infrared cut layer which is formed in the surface of the said board | substrate, and suppresses that infrared rays reach | attain the said board | substrate, and the said infrared cut layer A barrier film characterized by having an inorganic film is provided.

In the present invention, the infrared cut layer is preferably formed by a coating method.
In the present invention, it is preferable that the film forming section forms the inorganic film at room temperature.
Furthermore, the thickness of the infrared cut layer is preferably 0.1 to 100 times the thickness of the inorganic film.

  According to the heat treatment method of the present invention, an infrared cut layer that suppresses infrared rays from reaching the substrate is formed on the surface of the resin film substrate, and an inorganic film is formed on the surface of the infrared cut layer. Since the inorganic film is subjected to heat treatment by irradiating infrared rays to the inorganic film, the infrared cut layer prevents the infrared rays from reaching the substrate and suppresses the substrate from being heated by the infrared rays. Thereby, the influence of the heat | fever to the board | substrate by heat processing is suppressed, When a resin film is used for a board | substrate, an inorganic film | membrane can be heat-processed, without a quality change, a deformation | transformation, etc. arising in this resin film. As a result, the inorganic film is densified, or if there is a structural defect in the inorganic film, the inorganic film is repaired and the film quality is improved. For this reason, a barrier film having a high barrier property against oxygen, water vapor, water and the like can be obtained.

  Moreover, according to the barrier film of the present invention, the resin film substrate, the infrared cut layer that is formed on the surface of the substrate and suppresses infrared rays from reaching the substrate, and the surface of the infrared cut layer are formed. By having an inorganic film, when the inorganic film is irradiated with infrared rays and subjected to heat treatment, the infrared cut layer suppresses infrared rays from reaching the substrate, thereby suppressing the substrate from being heated by infrared rays. Thus, the influence of heat on the substrate due to the heat treatment is suppressed. Therefore, even when a resin film is used for the substrate, the inorganic film can be heat-treated without causing alteration or deformation of the resin film. Thus, in the barrier film of the present invention, since the inorganic film is heat-treated, if the inorganic film is densified or structural defects are repaired, the film quality is improved, so that oxygen, water vapor, The barrier property can be increased against water and the like.

Hereinafter, a film forming apparatus of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.
FIG. 1 is a schematic view showing a film forming apparatus according to the first embodiment of the present invention. FIG. 2 is an enlarged view of a main part of a heat treatment chamber of the film forming apparatus shown in FIG. The support roller 33 is shown upside down.

A film forming apparatus 10 according to the embodiment of the present invention shown in FIG. 1 is used for manufacturing a barrier film having a barrier property against, for example, a gas such as oxygen and water vapor, or water. This barrier film is used for food packaging, flexible display parts, and the like.
In the film forming apparatus 10, a substrate Z made of a resin film is used. As this board | substrate Z, resin films, such as a PET film (glass transition temperature: 67 degreeC) and a PEN film (glass transition temperature: 113 degreeC), are used, for example.
In the film forming apparatus 10 of the present embodiment, as will be described later, a heat treatment is performed on the formed inorganic film f, and a substrate Z on which an infrared cut layer 80 is formed in advance on the surface Zf is used.

The infrared cut layer 80 suppresses the infrared B from reaching the substrate Z by at least one of absorption and reflection of the infrared B. The infrared cut layer 80 is made of, for example, a resin containing conductive metal fine particles such as tin oxide or indium oxide, or a resin containing an infrared absorbing dye such as a diimonium compound or a cyanine compound.
The film forming apparatus 10 of this embodiment is for manufacturing a barrier film. For this reason, the infrared cut layer 80 is not particularly limited as long as it does not inhibit the transparency or color required as a barrier film, and in particular, the infrared cut layer 80 is limited as long as it can suppress the arrival of the infrared rays B to the substrate Z. It is not a thing.

  In this embodiment, since a resin film is used for the substrate Z, the structure and thickness of the infrared cut layer 80 are appropriately set so that the substrate Z is maintained at a temperature lower than the glass transition temperature during the heat treatment. Yes. For example, in order to suppress the infrared rays B from reaching the substrate Z without impairing the transparency required as a barrier film, the thickness of the infrared cut layer 80 is set to 0.1 times the thickness of the inorganic film f. ~ 100 times.

The film forming apparatus 10 is an apparatus that continuously forms a film on a long substrate Z (web-like substrate Z), and basically includes a supply chamber 12 for supplying the long substrate Z, A film formation chamber (chamber) 14 for forming the inorganic film f on the surface 80a of the infrared cut layer 80 formed on the substrate Z, a heat treatment chamber 16 for performing heat treatment on the formed inorganic film f, and an inorganic film f A winding chamber 18 for winding the formed long substrate Z, a vacuum exhaust means 40, and a controller 44 are provided. The operation of each element in the film forming apparatus 10 is controlled by the control unit 44.
In the film forming apparatus 10, a wall 15 a that partitions the supply chamber 12 and the film forming chamber 14, a wall 15 b that partitions the film forming chamber 14 and the heat treatment chamber 16, and a heat treatment chamber 16 and a winding chamber 18 are provided. Each partition wall 15c is formed with a slit-shaped opening 15d through which the substrate Z passes.

In the film forming apparatus 10, a vacuum exhaust means 40 is connected to the supply chamber 12, the film forming chamber 14, the heat treatment chamber 16, and the winding chamber 18 through a pipe 42. The inside of the supply chamber 12, the film formation chamber 14, the heat treatment chamber 16, and the winding chamber 18 is brought to a predetermined degree of vacuum by the vacuum exhaust means 40.
The vacuum exhaust means 40 exhausts the supply chamber 12, the film formation chamber 14, the heat treatment chamber 16, and the take-up chamber 18 to maintain a predetermined degree of vacuum, and has a vacuum pump such as a dry pump and a turbo molecular pump. It is. The supply chamber 12, the film formation chamber 14, the heat treatment chamber 16, and the winding chamber 18 are each provided with a pressure sensor (not shown) that measures the internal pressure.
The ultimate vacuum degree of the supply chamber 12, the film forming chamber 14, the heat treatment chamber 16, and the winding chamber 18 by the vacuum exhaust means 40 is not particularly limited, and a sufficient degree of vacuum is set according to the film forming method to be performed. Can be kept. The evacuation unit 40 is controlled by the control unit 44.

The f supply chamber 12 is a part for supplying a long substrate Z, and is provided with a substrate roll 20 and a guide roller 21.
The substrate roll 20 continuously feeds out a long substrate Z. For example, the substrate Z is wound counterclockwise.
For example, a motor (not shown) is connected to the substrate roll 20 as a drive source. By this motor, the substrate roll 20 is rotated in the direction r to rewind the substrate Z. In this embodiment, the substrate roll 20 is rotated clockwise and the substrate Z is continuously fed out.

The guide roller 21 guides the substrate Z to the film forming chamber 14 through a predetermined transport path. The guide roller 21 is a known guide roller.
In the film forming apparatus 10 of the present embodiment, the guide roller 21 may be a driving roller or a driven roller. Further, the guide roller 21 may be a roller that acts as a tension roller that adjusts the tension when the substrate Z is transported.

  As will be described later, the winding chamber 18 is a portion for winding the substrate Z on which the film is formed on the surface Zf in the film forming chamber 14 and further winding the inorganic film f that has been heat-treated in the heat treatment chamber 16. A roll 38 and a guide roller 36 are provided.

The take-up roll 38 is for taking up the formed substrate Z in a roll shape, for example, clockwise.
For example, a motor (not shown) is connected to the winding roll 38 as a drive source. The take-up roll 38 is rotated by this motor, and the film-formed substrate Z is taken up.
In the winding roll 38, the substrate Z is rotated by a motor in the winding direction R. In this embodiment, the substrate Z is rotated clockwise to continuously wind the film-formed substrate Z, for example, clockwise. take.

  The guide roller 36 guides the substrate Z transported from the film forming chamber 14 to the take-up roll 38 through a predetermined transport path, similarly to the guide roller 21 described above. The guide roller 36 is a known guide roller. As with the guide roller 21 in the supply chamber 12, the guide roller 36 may be a driving roller or a driven roller. The guide roller 36 may be a roller that acts as a tension roller.

The film forming chamber 14 functions as a vacuum chamber, and continuously forms a film on the surface Zf of the substrate Z by, for example, plasma CVD among the vapor phase film forming methods while transporting the substrate Z. It is a part.
The film forming chamber 14 is configured by using materials used in various vacuum chambers such as stainless steel.

In the film forming chamber 14, two guide rollers 24 and 28, a drum 26, and a film forming unit 50 are provided.
The guide roller 24 and the guide roller 28 are arranged so that the longitudinal direction thereof is orthogonal to the transport direction D of the substrate Z, and the guide roller 24 and the guide roller 28 are provided at a predetermined interval. Opposing and parallel to each other.

  The guide roller 24 transports the substrate Z transported from the guide roller 21 provided in the supply chamber 12 to the drum 26. For example, the guide roller 24 has a rotation axis in a direction orthogonal to the conveyance direction D of the substrate Z (hereinafter referred to as an axial direction) and can rotate, and the guide roller 24 has a length in the axial direction of the substrate Z. Longer than the length (hereinafter referred to as the width of the substrate Z).

The guide roller 28 conveys the substrate Z wound around the drum 26 to a guide roller 36 provided in the winding chamber 18. For example, the guide roller 28 has a rotation shaft in the axial direction and is rotatable, and the guide roller 28 has an axial length longer than the width of the substrate Z.
Since the guide roller 24 and the guide roller 28 have the same configuration as the guide roller 21 provided in the supply chamber 12 except for the above configuration, detailed description thereof will be omitted.

The drum 26 is provided below the space H between the guide roller 24 and the guide roller 28. The drum 26 is arranged with its longitudinal direction parallel to the longitudinal directions of the guide roller 24 and the guide roller 28. Furthermore, the drum 26 is grounded.
The drum 26 has, for example, a cylindrical shape, has a rotation shaft in the axial direction, and is rotatable. As shown in FIG. 2, the length of the drum 26 in the axial direction is longer than the width of the substrate Z. In the drum 26, when the center in the width direction of the substrate Z and the center in the axial direction of the drum 26 are aligned and the substrate Z is wound around the surface (circumferential surface), the end portions 26a on both sides thereof are This is a region where the substrate Z is not applied.
The drum 26 is configured to transport the substrate Z in the transport direction D while holding the substrate Z at a predetermined film forming position by rotating the substrate Z around the surface (circumferential surface).

The film forming unit 50 forms the inorganic film f on the surface 80a of the infrared cut layer 80 formed on the surface Zf of the substrate Z at a room temperature of about 25 ° C., for example. The inorganic film f is, for example, Al ₂ O ₃ (aluminum oxide film), SiO ₂ (silicon oxide film), or SiNx (silicon nitride film).
As shown in FIG. 1, the film forming unit 50 is provided below the drum 26, and the drum 26 rotates in a state where the substrate Z is wound around the drum 26, so that the substrate Z is moved in the transport direction D. The inorganic film f is formed on the surface 80a of the infrared cut layer 80 formed on the surface Zf of the substrate Z while being conveyed. The sheet P is obtained by forming the inorganic film f on the surface 80a of the infrared cut layer 80 formed on the surface Zf of the substrate Z made of this resin film.
The film forming unit 50 forms the inorganic film f by using, for example, plasma CVD among the vapor phase film forming methods. The film forming electrode 52, the high frequency power source 54, the source gas supply unit 56, and the partition unit 58 are provided. Have. The control unit 44 controls the high frequency power supply 54 and the source gas supply unit 56 of the film forming unit 50.

In the film forming unit 50, a film forming electrode 52 is provided below the film forming chamber 14 so as to face the surface of the drum 26 with a predetermined gap S therebetween. The film formation electrode 52 is formed in, for example, a rectangular plate shape in plan view, and a plurality of holes (not shown) are formed at equal intervals on a wide surface. The film forming electrode 52 is disposed with this wide surface facing the drum 26. The film forming electrode 52 is generally called a shower electrode.
In addition, a high frequency power supply 54 is connected to the film forming electrode 52, and a high frequency voltage is applied to the film forming electrode 52 by the high frequency power supply 54.

The source gas supply unit 56 supplies, for example, a source gas for forming a film into the gap S through a plurality of holes of the film forming electrode 52 via a pipe 57. A gap S between the drum 26 and the film forming electrode 52 becomes a plasma generation space.
In the present embodiment, for example, when forming a SiO ₂ film, the source gas uses TEOS gas and oxygen gas as the active species gas.

As the source gas supply unit 56, various gas introduction means used in a plasma CVD apparatus can be used.
In the source gas supply unit 56, not only the source gas but also various gases used in plasma CVD, such as an inert gas such as argon gas or nitrogen gas, and an active species gas such as oxygen gas, are used as the source gas. You may supply to the clearance gap S with gas. As described above, when a plurality of types of gases are introduced, each gas is mixed from the same pipe and supplied to the gap S through the plurality of holes of the film formation electrode 52. The gap 52 may be supplied through a plurality of holes in the electrode 52.
Further, the types or introduction amounts of the source gas or other inert gas and active species gas may be appropriately selected / set according to the type of film to be formed, the target film formation rate, or the like.

The partition 58 partitions the film forming electrode 52 in the film forming chamber 14.
For example, the partition portion 58 includes a pair of partition plates 58a, and is disposed so that the film formation electrode 52 is sandwiched between the pair of partition plates 58a.
Each partition plate 58 a is a plate-like member extending in the length direction of the drum 26, and an end portion on the drum 26 side is bent to the opposite side to the film formation electrode 52. By this partition portion 58, the gap S, that is, the plasma generation space is partitioned in the film forming chamber 14.

The film forming electrode 52 is not limited to a flat plate shape. For example, various film forming electrodes can be used as long as the film can be formed by plasma CVD, such as a configuration in which a plurality of electrodes divided in the axial direction of the drum 26 are arranged. An electrode configuration is available. Note that the film-forming electrode 52 is preferably a flat-plate shower electrode having a rectangular shape in plan view as in the present embodiment, in terms of uniformity of an electric field with respect to the substrate Z and plasma.
Further, the film forming electrode 52 and the high-frequency power source 54 may be connected via a matching box for impedance matching, if necessary.

The heat treatment chamber 16 improves the film quality of the inorganic film f with respect to the sheet P, such as densifying the inorganic film f formed on the surface Zf of the substrate Z, or repairing the inorganic film f if there is a defect. In order to improve, heat treatment is being performed.
In the heat treatment chamber 16, a conveyance roller 32 and a heat treatment unit 60 are provided. The heat treatment unit 60 includes a support roller 33 and an infrared lamp unit 62.

The transport roller 32 transports the substrate Z that has been heat-treated to the inorganic film f by the heat treatment unit 60 from the support roller 33 of the heat treatment unit 60 to the guide roller 36 of the winding chamber 18. The transport roller 32 is disposed with its longitudinal direction orthogonal to the transport direction D of the substrate Z, and is rotatable with an axis of rotation in the axial direction. The length is longer than the width of the substrate Z.
Moreover, since the conveyance roller 32 has the same configuration as the guide roller 21 provided in the supply chamber 12 except for the above configuration, a detailed description thereof will be omitted.

  The support roller 33 of the heat treatment unit 60 is provided on the film formation chamber 14 side of the heat treatment chamber 16. The support roller 33 is arranged with its longitudinal direction parallel to the longitudinal direction of the transport roller 32. The back surface Zf of the substrate Z is wound around the front surface 33 a of the support roller 33.

The support roller 33 heat-treats the inorganic film f in a state where the back surface Zf of the substrate Z is wound in contact with the front surface 33a.
In the present embodiment, as will be described later, the infrared cut layer 80 formed on the surface Zf of the substrate Z suppresses the influence of heat on the substrate Z when the inorganic film f is heated for heat treatment. Can do.

  The support roller 33 is provided with a cooling unit (not shown) provided with a pipe (not shown) for circulating the refrigerant inside and provided with a pump (not shown) for circulating the refrigerant. It may be provided. By this cooling unit, the refrigerant circulates in the pipe provided on the support roller 33, and the temperature of the surface 33a of the support roller 33 can be set to 0 ° C. to 25 ° C. (normal temperature), for example. In this manner, the surface 33a of the support roller 33 may be configured to have a low temperature. Thereby, the temperature of the board | substrate Z can be more reliably made into less than a glass transition temperature at the time of heat processing.

The infrared lamp unit 62 shown in FIG. 2 is for heat-treating the inorganic film f formed on the surface 80a of the infrared cut layer 80 formed on the surface Zf of the substrate Z, and is used for RTA (Rapid Thermal Anneal). Is available. The infrared lamp unit 62 is provided below the support roller 33.
The infrared lamp unit 62 includes, for example, a case 64 that extends in the axial direction and has an opening formed on the support roller 33 side, and is housed inside the case 64 and has a concave surface so as to collect light on the surface 33 a of the support roller 33. The reflector 66 is formed in a shape, and an infrared lamp 68 is provided inside the reflector 66 and extends in the axial direction. The infrared lamp 68 is controlled to be turned on and off by the control unit 44.

Infrared B irradiated from the infrared lamp 68 is reflected by the reflector 66 and condensed on the inorganic film f of the substrate Z, and the inorganic film f is heated to a temperature of, for example, 700 ° C. to 1000 ° C. or 100 ° C. to 1000 ° C. Is done.
In the inorganic film f of the substrate Z, the region irradiated with the infrared ray B from the infrared lamp unit 62 is heat-treated. The heat treatment time by the infrared ray B is determined by, for example, the rotation speed of the support roller 33.

In addition, in the heat processing part 60, although the infrared lamp unit 62 was used as a heat source, if it heats with infrared rays, it will not specifically limit. For example, a laser light source used for laser annealing or the like may be used as the heat source.
In the present embodiment, the inorganic film f of the substrate Z is irradiated with the infrared ray B and heated, but it is preferable to use the near infrared region (0.75 to 2.5 μm) of the infrared ray.
This is because infrared rays in the near-infrared region are more easily absorbed by the surface layer than those in other wavelength regions, and the surface layer can be selectively heated. By using the one in the near infrared region, the inorganic film f can be selectively heated.

In the present embodiment, the heat treatment unit 60 uses the infrared lamp unit 62 to convert the infrared ray B into the inorganic film f formed on the surface 80a of the infrared cut layer 80 formed on the surface Zf of the substrate Z, that is, a sheet body. The P inorganic film f is condensed and heated, and the heat treatment is performed for a predetermined time. In this case, the infrared cut layer 80 formed on the surface Zf of the substrate Z causes at least one of absorption of the infrared B and reflection of the infrared B, and the infrared B reaches the substrate Z. It is suppressed. Thereby, when densification of the inorganic film f of the sheet | seat P or the repair of the structural defect of the inorganic film f is performed by the heat processing part 60, the bad influence by heating to the board | substrate Z is suppressed.
The support roller 33 preferably transmits or absorbs the infrared ray B. Thereby, even if the infrared ray B reaches the substrate Z, the support roller 33 transmits or absorbs the infrared ray B, so that the temperature rise of the substrate Z can be suppressed and the influence of heat on the substrate Z can be suppressed. Can do.
In addition, when the support roller 33 is a thing which permeate | transmits the infrared rays B, it is preferable that the transmittance | permeability of the infrared rays B of the support roller 33 is 90% or more. Moreover, when the support roller 33 absorbs the infrared rays B, the absorption rate is preferably 95% or more.

Next, the operation of the film forming apparatus 10 according to the present embodiment will be described in detail focusing on a film forming method, a heat treatment method, and the like.
In the film forming apparatus 10 of this embodiment, the substrate Z on which the infrared cut layer 80 is previously formed on the surface Zf is wound around the substrate roll 20.
The film forming apparatus 10 has a predetermined path from the supply chamber 12 through the film formation chamber 14 and the heat treatment chamber 16 to the winding chamber 18, and the infrared cut layer 80 is previously formed on the surface Zf from the supply chamber 12 to the winding chamber 18. While transporting through the formed long substrate Z, an inorganic film f is formed on the substrate Z in the film forming chamber 14, and the inorganic film f is heat-treated in the heat treatment chamber 18 to finally produce a barrier film. Is.

In the film forming apparatus 10, a long substrate Z is transported to the film forming chamber 14 via a guide roller 21 from a substrate roll 20 wound counterclockwise, for example. In the film forming chamber 14, the film is transferred to the heat treatment chamber 16 through the guide roller 24, the drum 26, and the guide roller 28. In the heat treatment chamber 16, the heat treatment chamber 16 is conveyed to the winding chamber 18 through the support roller 33 and the conveyance roller 32. In the winding chamber 18, the long substrate Z is wound on the winding roll 38 through the guide roller 36.
After passing the long substrate Z through this transfer path, the inside of the supply chamber 12, the film formation chamber 14, the heat treatment chamber 16, and the winding chamber 18 is maintained at a predetermined degree of vacuum by the vacuum exhaust means 40 to form a film. In the unit 50, a high frequency voltage is applied from the high frequency power source 54 to the film forming power source 42, and a raw material gas for forming the inorganic film f is supplied from the raw material gas supply unit 56 to the gap S through the pipe 57.

When electromagnetic waves are emitted around the film forming power source 42, plasma localized in the vicinity of the film forming electrode 52 is generated in the gap S, and the source gas is excited and dissociated. Thereby, the predetermined inorganic film f is formed on the surface 80a of the infrared cut layer 80 formed on the surface Zf of the substrate Z, and the sheet body P is obtained.
Sequentially, the substrate roll 20 on which the long substrate Z is wound counterclockwise is rotated clockwise by the motor, and the long substrate Z is continuously fed out, and the drum 26 generates plasma on the substrate Z. The inorganic film f is continuously formed on the surface 80a of the infrared cut layer 80 formed on the surface Zf of the long substrate Z by the film forming unit 50 by rotating the drum 26 at a predetermined speed while maintaining the position. Thus, the sheet body P is obtained.
The sheet P conveyed from the guide roller 28 to the heat treatment chamber 18, that is, the substrate Z on which the inorganic film f is formed on the surface 80 a of the infrared cut layer 80 is conveyed to the support roller 33.

While the support roller 33 rotates, the infrared lamp unit 62 irradiates the inorganic film f of the substrate Z on the support roller 33 so that the infrared ray B is condensed, and the inorganic film f is, for example, 700 ° C. to 1000 ° C. Or it heats to the temperature of 100 to 1000 degreeC, and is heat-processed by maintaining the temperature for the predetermined time. Thereby, the inorganic film f is densified, and further, if there is a structural defect in the inorganic film f, the structural defect is repaired.
At this time, even if the inorganic film f is heated by the infrared ray B, at least one of the absorption of the infrared ray B and the reflection of the infrared ray B occurs in the infrared ray cut layer 80, so that the infrared ray B reaches the substrate Z. It is suppressed. Thereby, the heating of the substrate Z is suppressed, and the adverse effect of heat on the substrate Z during the heat treatment can be suppressed.

In the present embodiment, the inorganic film f is formed on the surface 80a of the infrared cut layer 80 formed on the surface Zf of the long substrate Z, and after the inorganic film f is formed, the support roller 33 is rotated and supported. In a state where the substrate Z is wound around the roller 33, the inorganic film f is heated by the infrared rays B and subjected to heat treatment. Thereby, even if the substrate Z is a resin film, the film quality of the inorganic film f can be improved while suppressing the influence of quality, such as deformation and melting of the resin film due to heating during heat treatment. Therefore, the inorganic film f can be made excellent in film quality, and a barrier film having a high barrier property against oxygen, water vapor, water and the like can be manufactured.
In the barrier film thus manufactured, the inorganic film f is heat-treated, so that the inorganic film f is densified, and if there is a structural defect in the inorganic film f, the repair is made and the film quality is improved. High barrier properties against oxygen, water vapor, water, etc.

  Further, when a resin film is used for the substrate Z, the film forming unit 50 cannot increase the temperature during film formation to be higher than the glass transition temperature. For this reason, there is a high possibility that the formed inorganic film f is not dense or structural defects occur. However, in this embodiment, the inorganic film f is densified by heat treatment, and when there is a structural defect, the structural defect is also repaired to improve the film quality. Thereby, the inorganic film f with excellent film quality is obtained.

  In addition, although the film-forming apparatus 10 of this embodiment is a roll-to-roll type, it is not limited to this, If the resin film is used for the board | substrate Z, the aspect of the film-forming apparatus 10 will be It is not particularly limited.

Further, the heat treatment unit 60 is not limited to the present embodiment using the support roller 33 as long as heat treatment can be performed.
For example, as in the heat treatment unit 60a shown in FIG. 3, a table 73 is used as a support member, and a sheet body P, that is, an inorganic film f is formed on the surface 80a of the infrared cut layer 80 on the surface 73a of the table 73. A substrate Z is placed.
Above the table 73, a plurality of infrared lamp units 62a having the same configuration as the infrared lamp unit 62 of the present embodiment are arranged with the infrared lamps 68 in parallel. A plurality of infrared lamp units 62 a irradiate the surface 73 a of the table 73 with infrared rays B in a planar shape.
In the heat treatment unit 60 a, the sheet Z, that is, the substrate Z on which the inorganic film f is formed on the surface 80 a of the infrared cut layer 80 is placed on the surface 73 a of the table 73. Thereafter, the infrared rays B are irradiated onto the inorganic film f in a planar shape by a plurality of arranged infrared lamp units 62a, heated to a predetermined temperature, and the irradiation of the infrared rays B is stopped after a predetermined time has elapsed. In this way, the film quality of the inorganic film f may be improved.
Also in this case, a cooling unit (not shown) for cooling the table 73 may be provided, and the substrate Z placed on the table 73 may be cooled. For example, the cooling unit is a known cooler including a Peltier element.

Next, a second embodiment of the present invention will be described.
FIG. 4 is a schematic view showing a film forming apparatus according to the second embodiment of the present invention.
In the present embodiment, the same components as those in the film forming apparatus of the first embodiment shown in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 4, the film forming apparatus 10 a of the present embodiment forms an infrared cut layer 80 on the surface Zf of the substrate Z, as compared with the film forming apparatus 10 of the first embodiment (see FIG. 1). The difference is that the film forming unit 90 is provided, and only the vacuum evacuation unit 40, the film forming chamber 14, and the heat treatment chamber 16 are connected via the pipe 42a. Other configurations are the same as those in the first embodiment. Since it is the same structure as the film-forming apparatus 10, the detailed description is abbreviate | omitted.

  In the film forming apparatus 10 a of this embodiment, a film forming chamber 19 is provided between the supply chamber 12 and the film forming chamber 14. A slit-like opening 15d through which the substrate Z passes is formed in the wall 15a that partitions the supply chamber 12 and the film forming chamber 19, and the wall 15e that partitions the film forming chamber 19 and the film forming chamber 14 is formed in the wall 15a. A slit-shaped opening 15f through which the substrate Z passes is formed. In addition, a slit-like opening 15f through which the substrate Z passes is also formed in the wall 15e that partitions the heat treatment chamber 16 and the winding chamber 18. These openings 15 f are provided with seal portions (not shown) for maintaining a vacuum inside the film forming chamber 14 and the heat treatment chamber 16.

A film forming unit 90 is provided in the film forming chamber 19. The film forming unit 90 includes a coating unit 92 and a drying unit 94. The application unit 92 is provided on the supply chamber 12 side, that is, on the upstream side of the drying unit 94.
In addition, the application unit 92 forms the infrared cut layer 80 by a coating method in which a solution to be the infrared cut layer 80 is uniformly applied to the surface Zf of the substrate Z and then dried to form a film. . The application unit 92 includes an application roll 94 and a supply unit 96.
The coating roll 94 uniformly coats the surface Zf of the substrate Z with the solution that becomes the infrared cut layer 80, and is disposed in contact with the surface Zf of the substrate Z. The coating roller 94 has a rotation shaft in the axial direction and is rotatable, and the coating roller 94 is longer in the axial direction than the width of the substrate Z.
The supply unit 96 is for supplying a solution that becomes the infrared cut layer 80 to the coating roll 94, and is provided below the coating roll 94.
The drying unit 98 dries the solution applied to the surface Zf of the substrate Z to form the infrared cut layer 80. As the drying unit 98, a known unit used for forming a film by a coating method can be used.

  In the film forming apparatus 10 a of this embodiment, the film forming unit 90 can form the infrared cut layer 80 on the surface Zf of the substrate Z before the substrate Z is transported to the film forming chamber 14. Other than this, the configuration is the same as that of the film forming apparatus 10 of the first embodiment. For this reason, also in the film-forming apparatus 10a of this embodiment, the effect similar to the film-forming apparatus 10 of 1st Embodiment can be acquired.

Further, in the manufacturing method using the film forming apparatus 10a of the present embodiment, only the step of forming the infrared cut layer 80 on the surface Zf of the substrate Z and transporting the substrate Z to the film forming chamber 14 is added. The other steps are the same as those in the first embodiment.
In the present embodiment, the substrate Z is transported from the supply chamber 12 to the film forming chamber 19, and a solution that becomes the infrared cut layer 80 is applied to the surface Zf of the substrate Z by the coating roll 94. Next, drying is performed by the drying unit 98 to form the infrared cut layer 80 on the surface Zf of the substrate Z. And the infrared cut layer 80 formed in the surface Zf of the board | substrate Z is supplied to the film-forming chamber 14, the film-forming part 50 forms the inorganic film f in the surface 80a of the infrared cut layer 80, and the sheet body P is obtained. . The inorganic film f of the sheet P is subjected to heat treatment at the heat treatment unit 60.
Also in this embodiment, since the infrared cut layer 80 is formed on the surface Zf of the substrate Z, the infrared rays B are prevented from reaching the substrate Z. For this reason, the influence of the heat to the board | substrate Z at the time of the heat processing using the infrared rays B is suppressed, and the effect similar to 1st Embodiment can be acquired.

Moreover, in this embodiment, although the infrared cut layer 80 was formed by the apply | coating system, it is not limited to this. For example, a resin sheet to be the infrared cut layer 80 may be prepared in advance, and the infrared cut layer 80 may be formed by laminating the resin sheet on the surface Zf of the substrate Z.
In this embodiment, it is needless to say that the support roller 33 may be provided with a cooling unit.

  In any of the above-described film forming apparatuses 10 and 10a, the resin film substrate Z, the infrared cut layer 80 formed on the surface Zf of the substrate Z, and the surface 80a of the infrared cut layer 80 are formed. A barrier film having a structure in which the inorganic film f is subjected to heat treatment. However, the configuration of the barrier film is not particularly limited as long as the infrared cut layer 80 is formed above the substrate Z and directly below the inorganic film f. For example, the barrier film may have a configuration in which a layer such as an adhesion layer is provided between the substrate Z and the infrared cut layer 80.

  In the film forming apparatuses 10 and 10a of any of the above-described embodiments, the plasma CVD has been described as an example. However, the present invention is not limited to the plasma CVD. As long as the film-forming part of this invention uses a vapor-phase film-forming method, various physical vapor deposition methods (PVD: Physical Vapor Deposition), chemical vapor deposition method (CVD: Chemical Vapor Deposition), A sputtering method or an ion plating method can also be used. Also in this case, since the resin film is used for the substrate Z, the temperature of the substrate Z is set to be equal to or lower than the glass transition temperature of the resin film.

  As mentioned above, although the heat processing method and barrier film of this invention were demonstrated in detail, this invention is not limited to the said Example, You may perform various improvement and change in the range which does not deviate from the summary of this invention. Of course.

It is a schematic diagram which shows the film-forming apparatus which concerns on the 1st Embodiment of this invention. It is a typical side view of the film-forming chamber of the film-forming apparatus shown in FIG. It is a schematic diagram which shows the modification of the heat processing part of the film-forming apparatus which concerns on the 1st Embodiment of this invention. It is a schematic diagram which shows the film-forming apparatus which concerns on the 2nd Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Film forming apparatus 12 Supply chamber 14 Film forming chamber 16 Heat treatment chamber 18 Winding chamber 19 Film forming chamber 20 Substrate roll 21, 24, 28, 36 Guide roller 32 Transport roller 33 Support roller 38 Winding roll 40 Vacuum exhaust means 44 Control Unit 50 film forming unit 52 film forming electrode 54 high frequency power source 56 source gas supply unit 60 heat treatment unit 62 infrared lamp unit 90 film forming unit D transport direction f inorganic film Z substrate

Claims (8)

An infrared cut layer that suppresses infrared rays from reaching the substrate is formed on the surface of the resin film substrate, and an inorganic film is formed on the surface of the infrared cut layer.
A heat treatment method comprising a step of performing heat treatment by irradiating the inorganic film with infrared rays.   The heat processing method of Claim 1 which has the process of forming the said infrared cut layer on the surface of the said board | substrate.   The heat treatment method according to claim 1 or 2, wherein the infrared ray is used in a near infrared region.   The heat processing method of any one of Claims 1-3 which hold | maintains the said board | substrate made from the resin film at the temperature below glass transition temperature when heat-treating the said inorganic film | membrane.   The heat treatment method according to claim 1, wherein the infrared cut layer is formed by a coating method. A resin film substrate;
An infrared cut layer that is formed on the surface of the substrate and suppresses infrared rays from reaching the substrate;
A barrier film comprising an inorganic film formed on a surface of the infrared cut layer.   The barrier film according to claim 6, wherein the infrared cut layer is formed by a coating method.   The barrier film according to claim 6 or 7, wherein the infrared cut layer has a thickness of 0.1 to 100 times the thickness of the inorganic film.

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