JP2009152704A - Oscillation circuit, method of inspecting abnormal oscillation, high frequency receiver, and high frequency transmitter - Google Patents

Oscillation circuit, method of inspecting abnormal oscillation, high frequency receiver, and high frequency transmitter Download PDF

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JP2009152704A
JP2009152704A JP2007326679A JP2007326679A JP2009152704A JP 2009152704 A JP2009152704 A JP 2009152704A JP 2007326679 A JP2007326679 A JP 2007326679A JP 2007326679 A JP2007326679 A JP 2007326679A JP 2009152704 A JP2009152704 A JP 2009152704A
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Yusuke Kishino
裕介 岸野
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an oscillation circuit capable of shortening inspection time of inspecting whether abnormal oscillation exists, even when a plurality of voltage controlled oscillators are included. <P>SOLUTION: The oscillation circuit includes first to n-th (n is a natural number ≥2) voltage controlled oscillators VCO1 to VCOn having respectively different operation current values, one reference voltage generation circuit RV0 and first to n-th (n is a natural number ≥2) switches SW1 to SWn. In all ks (k=1 to n), the k-th switch SWk is connected between a DC bias input terminal T_k of the k-th voltage controlled oscillator VCOk and the DC bias output terminal T_0 of the reference voltage generation circuit RV0, and when the k-th switch SWk is in an ON state, a base bias voltage is supplied from the reference voltage generation circuit RV0 to a differential transistor of the k-th voltage controlled oscillator VCOk. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、複数の電圧制御発振器を有する発振回路、その発振回路の異常発振を検査する方法、並びにその発振回路を有する高周波受信機及び高周波送信機に関する。   The present invention relates to an oscillation circuit having a plurality of voltage-controlled oscillators, a method for inspecting abnormal oscillation of the oscillation circuit, a high-frequency receiver and a high-frequency transmitter having the oscillation circuit.

広い帯域に多数のチャンネルが存在する衛星放送用受信機やケーブルテレビ用受信機で用いられる発振器は、広い発振周波数レンジでかつ低位相雑音であることが要求される。このような発振器を小型で実現する方法としてチューニング電圧により発振周波数を可変することができる電圧制御発振器を用いた方法が一般的である。しかしながら、１つの電圧制御発振器で広い発振周波数レンジをカバーしようとするとチューニング電圧に対する発振周波数の感度が高くなるため位相雑音特性の劣化を招く。   An oscillator used in a satellite broadcast receiver or a cable television receiver having a large number of channels in a wide band is required to have a wide oscillation frequency range and low phase noise. As a method of realizing such an oscillator in a small size, a method using a voltage controlled oscillator that can vary an oscillation frequency by a tuning voltage is generally used. However, if an attempt is made to cover a wide oscillation frequency range with a single voltage-controlled oscillator, the sensitivity of the oscillation frequency to the tuning voltage increases, leading to deterioration of the phase noise characteristics.

このため、広い発振周波数レンジにおいて低位相雑音を実現する方法として、複数の電圧制御発振器を設ける方法が考案されている（例えば、特許文献１〜３参照）。複数の電圧制御発振器を有する発振回路は、発振周波数帯域が異なる電圧制御発振器を複数設けることによって広い発振周波数レンジをカバーすることができ、個々の電圧制御発振器においては発振周波数レンジが狭いため位相雑音特性の劣化が起こりにくい。   For this reason, a method of providing a plurality of voltage controlled oscillators has been devised as a method of realizing low phase noise in a wide oscillation frequency range (see, for example, Patent Documents 1 to 3). An oscillation circuit having a plurality of voltage controlled oscillators can cover a wide oscillation frequency range by providing a plurality of voltage controlled oscillators having different oscillation frequency bands, and each of the voltage controlled oscillators has a narrow oscillation frequency range. Deterioration of characteristics hardly occurs.

特開昭５８−１３６１４２号公報JP 58-136142 A 特開昭６２−１６６６１９号公報Japanese Patent Laid-Open No. Sho 62-166619 特開平９−１０２７５２号公報JP-A-9-102752

ここで、複数の電圧制御発振器を有する従来の発振回路の構成例を図５に示す。トランジスタＴｒ１＿１、Ｔｒ１＿２、・・・、Ｔｒ１＿ｎは基準電圧生成回路の構成要素である。トランジスタＴｒ１＿１と差動トランジスタＴｒ２＿１及びＴｒ３＿１とはカレントミラーで接続され、以下同様に、トランジスタＴｒ１＿２と差動トランジスタＴｒ２＿２及びＴｒ３＿２とがカレントミラーで接続され、・・・、トランジスタＴｒ１＿ｎと差動トランジスタＴｒ２＿ｎ及びＴｒ３＿ｎとがカレントミラーで接続されている。また、差動トランジスタＴｒ２＿１及びＴｒ３＿１の各面積をトランジスタＴｒ１＿１の面積のＮ１倍とし、以下同様に、差動トランジスタＴｒ２＿２及びＴｒ３＿２の各面積をトランジスタＴｒ１＿２の面積のＮ２倍とし、・・・、差動トランジスタＴｒ２＿ｎ及びＴｒ３＿ｎの各面積をトランジスタＴｒ１＿ｎの面積のＮｎ倍としているため、差動トランジスタＴｒ２＿１及びＴｒ３＿１に流れるコレクタ電流は基準電圧生成回路のトランジスタＴｒ１＿１に流れるコレクタ電流Ｉ１のＮ１倍となり、以下同様に、差動トランジスタＴｒ２＿２及びＴｒ３＿２に流れるコレクタ電流は基準電圧生成回路のトランジスタＴｒ１＿２に流れるコレクタ電流Ｉ２のＮ２倍となり、・・・、差動トランジスタＴｒ２＿ｎ及びＴｒ３＿ｎに流れるコレクタ電流は基準電圧生成回路のトランジスタＴｒ１＿ｎに流れるコレクタ電流ＩｎのＮｎ倍となる。   Here, FIG. 5 shows a configuration example of a conventional oscillation circuit having a plurality of voltage controlled oscillators. Transistors Tr1_1, Tr1_2,..., Tr1_n are components of the reference voltage generation circuit. The transistor Tr1_1 and the differential transistors Tr2_1 and Tr3_1 are connected by a current mirror. Similarly, the transistor Tr1_2 and the differential transistors Tr2_2 and Tr3_2 are connected by a current mirror,..., ..., the transistor Tr1_n and the differential transistor Tr2_n and Tr3_n is connected by a current mirror. Each area of the differential transistors Tr2_1 and Tr3_1 is set to N1 times the area of the transistor Tr1_1. Similarly, each area of the differential transistors Tr2_2 and Tr3_2 is set to N2 times the area of the transistor Tr1_2. Since the areas of the transistors Tr2_n and Tr3_n are Nn times the area of the transistor Tr1_n, the collector current flowing through the differential transistors Tr2_1 and Tr3_1 is N1 times the collector current I1 flowing through the transistor Tr1_1 of the reference voltage generation circuit, and so on. The collector current flowing in the differential transistors Tr2_2 and Tr3_2 is N2 times the collector current I2 flowing in the transistor Tr1_2 of the reference voltage generation circuit,..., And the collector current flowing in the differential transistors Tr2_n and Tr3_n. Inductor current becomes Nn times the collector current In flowing through the transistor Tr1_n of the reference voltage generating circuit.

図５に示す従来の発振回路が有する電圧制御発振器ＶＣＯ１’の発振周波数、すなわち、インダクタＬ１＿１及びＬ２＿１と可変容量素子Ｃ１＿１及びＣ２＿１とからなる共振回路の共振周波数ｆ1は、下記の（１）式で表される。ただし、Ｃは可変容量素子Ｃ１＿１及びＣ２＿１の各容量値であり、ＬはインダクタＬ１＿１及びＬ２＿１の各インダクタンスである。

Figure 2009152704
The oscillation frequency of the voltage controlled oscillator VCO1 ′ included in the conventional oscillation circuit shown in FIG. 5, that is, the resonance frequency f 1 of the resonance circuit including the inductors L1_1 and L2_1 and the variable capacitance elements C1_1 and C2_1 is expressed by the following equation (1). It is represented by However, C is each capacitance value of the variable capacitance elements C1_1 and C2_1, and L is each inductance of the inductors L1_1 and L2_1.
Figure 2009152704

ところで、バイポーラトランジスタでは、図６に示すようにエミッタ−ベース間空間電荷領域において一般的に存在する結晶歪みなどにより、少数キャリアと多数キャリアとのランダムな再結合が起こることがある。このランダムな再結合が発生すると、バイポーラトランジスタのベース電流が揺らぎ、微小電流ノイズＩNOISEが発生する。 By the way, in the bipolar transistor, as shown in FIG. 6, random recombination of minority carriers and majority carriers may occur due to crystal distortion generally present in the emitter-base space charge region. When this random recombination occurs, the base current of the bipolar transistor fluctuates and minute current noise I NOISE is generated.

図５に示す従来の発振回路が有する電圧制御発振器ＶＣＯ１’において、図７に示すように微小電流ノイズＩNOISEが基準電圧生成回路のトランジスタＴｒ１＿１で発生した場合、ポイントＰ１の電圧には微小電流ノイズＩNOISEと抵抗Ｒ１＿１との積が余計に現れる。このため、トランジスタＴｒ１＿１で発生した微小電流ノイズＩNOISEのＮ１倍のベース電流が差動トランジスタＴｒ２＿１及びＴＲ３＿１のベースに流れ込み、結果的に差動トランジスタＴｒ２＿１及びＴＲ３＿１のコレクタ電流Ｉ２＿１及びＩ３＿１にもトランジスタＴｒ１＿１のコレクタ電流に含まれるノイズ電流と同じ割合のノイズ電流が含まれる。ノイズ電流が含まれたコレクタ電流Ｉ２＿１及びＩ３＿１が流れると、ポイントＰ２及びＰ３の直流成分電圧はコレクタ電流Ｉ２＿１及びＩ３＿１に含まれるノイズ電流に応じて揺らぐため、可変容量素子Ｃ１＿１及びＣ２＿１の各容量値も±ＣNOISE揺らぐ。 In the voltage controlled oscillator VCO1 ′ of the conventional oscillation circuit shown in FIG. 5, when a minute current noise I NOISE is generated in the transistor Tr1_1 of the reference voltage generation circuit as shown in FIG. 7, the voltage at the point P1 is a minute current noise. An extra product of I NOISE and resistance R1_1 appears. For this reason, a base current N1 times the minute current noise I NOISE generated in the transistor Tr1_1 flows into the bases of the differential transistors Tr2_1 and TR3_1. The noise current is included in the same proportion as the noise current included in the collector current. When the collector currents I2_1 and I3_1 including the noise current flow, the DC component voltages at the points P2 and P3 fluctuate according to the noise current included in the collector currents I2_1 and I3_1. Therefore, the capacitance values of the variable capacitance elements C1_1 and C2_1 Also ± C NOISE shakes.

したがって、微小電流ノイズＩNOISEが基準電圧生成回路のトランジスタＴｒ１＿１で発生した場合の図５に示す従来の発振回路が有する電圧制御発振器ＶＣＯ１’の発振周波数、すなわち、微小電流ノイズＩNOISEが基準電圧生成回路のトランジスタＴｒ１＿１で発生した場合のインダクタＬ１＿１及びＬ２＿１と可変容量素子Ｃ１＿１及びＣ２＿１とからなる共振回路の共振周波数ｆ1'は、下記の（２）式で表される。

Figure 2009152704
Therefore, when the minute current noise I NOISE is generated in the transistor Tr1_1 of the reference voltage generation circuit, the oscillation frequency of the voltage controlled oscillator VCO1 ′ of the conventional oscillation circuit shown in FIG. 5, that is, the minute current noise I NOISE is generated as the reference voltage. The resonance frequency f 1 ′ of the resonance circuit composed of the inductors L1_1 and L2_1 and the variable capacitance elements C1_1 and C2_1 when generated in the transistor Tr1_1 of the circuit is expressed by the following equation (2).
Figure 2009152704

つまり、基準電圧生成回路のバイポーラトランジスタに微小電流ノイズが発生すると、発振周波数が揺らぎ異常発振することがわかる。上記の説明においては、電圧制御発振器ＶＣＯ１’の場合を例に挙げて説明したが、電圧制御発振器ＶＣＯ２’、・・・、ＶＣＯｎ’でも同じ現象が発生する可能性があるため、異常発振の有無検査はすべての電圧制御発振器で行う必要があり、その検査に時間がかかっていた。   That is, it can be seen that when a minute current noise occurs in the bipolar transistor of the reference voltage generation circuit, the oscillation frequency fluctuates and abnormal oscillation occurs. In the above description, the case of the voltage controlled oscillator VCO1 ′ has been described as an example. However, since the same phenomenon may occur in the voltage controlled oscillator VCO2 ′,. The inspection had to be done with all voltage controlled oscillators, and it took time.

本発明は、上記の問題に鑑みてなされたものであり、複数の電圧制御発振器を有するにもかかわらず異常発振の有無検査の検査時間を短縮することができる発振回路、その発振回路の異常発振を検査する方法、並びにその発振回路を有する高周波受信機及び高周波送信機を提供することを目的とする。   The present invention has been made in view of the above problems, and an oscillation circuit capable of reducing the inspection time for the presence or absence of abnormal oscillation despite having a plurality of voltage controlled oscillators, and abnormal oscillation of the oscillation circuit And a high frequency receiver and a high frequency transmitter having the oscillation circuit.

上記目的を達成するために本発明に係る発振回路は、動作電流がそれぞれ異なる値である第１から第ｎ（ｎは２以上の自然数）の電圧制御発振器と、１つの基準電圧生成回路と、第１から第ｎ（ｎは２以上の自然数）のスイッチとを備え、すべてのｋ（ｋ＝１〜ｎ）について、第ｋの電圧制御発振器と前記基準電圧生成回路との間に第ｋのスイッチが設けられており、第ｋのスイッチがオン状態のときに前記基準電圧生成回路から第ｋの電圧制御発振器の差動トランジスタにベースバイアス電圧が供給される構成としている。   In order to achieve the above object, an oscillation circuit according to the present invention includes first to n-th (n is a natural number of 2 or more) voltage-controlled oscillators having different operating currents, one reference voltage generation circuit, First to n-th (n is a natural number of 2 or more) switches, and for all k (k = 1 to n), a k-th switch between the k-th voltage controlled oscillator and the reference voltage generation circuit. A switch is provided, and a base bias voltage is supplied from the reference voltage generation circuit to the differential transistor of the k-th voltage controlled oscillator when the k-th switch is in an ON state.

このような構成によると、第１から第ｎの電圧制御発振器の差動トランジスタにベースバイアス電圧を供給する基準電圧生成回路が１つであるので、ベースバイアス電圧が揺らいだときに生じる発振周波数の揺らぎ量は、動作電流が最も大きい電圧制御発振器が最も多くなる。したがって、第１から第ｎの電圧制御発振器のうち動作電流が最も大きい電圧制御発振器についてのみ異常発振の有無を検査すれば十分であるので、複数の電圧制御発振器を有するにもかかわらず異常発振の有無検査の検査時間を短縮することができる。   According to such a configuration, since there is one reference voltage generation circuit that supplies the base bias voltage to the differential transistors of the first to n-th voltage controlled oscillators, the oscillation frequency generated when the base bias voltage fluctuates. The amount of fluctuation is highest in the voltage controlled oscillator having the largest operating current. Therefore, since it is sufficient to check the presence or absence of abnormal oscillation only for the voltage controlled oscillator having the largest operating current among the first to nth voltage controlled oscillators, the abnormal oscillation can be achieved despite having a plurality of voltage controlled oscillators. The inspection time for the presence / absence inspection can be shortened.

また、上記構成の発振回路において、第１から第ｎの電圧制御発振器はそれぞれ発振周波数帯域が異なる電圧制御発振器であり、第１から第ｎのスイッチのうち１つのみをオン状態にして第１から第ｎの電圧制御発振器のうち１つのみを選択し発振動作をさせるようにしてもよい。   In the oscillation circuit having the above-described configuration, the first to nth voltage controlled oscillators are voltage controlled oscillators having different oscillation frequency bands, and only one of the first to nth switches is turned on. Alternatively, only one of the n-th voltage controlled oscillators may be selected to oscillate.

このような構成によると、広い発振周波数レンジにおいて低位相雑音を実現することができる。   According to such a configuration, low phase noise can be realized in a wide oscillation frequency range.

また、上記各構成の発振回路において、すべてのｋ（ｋ＝１〜ｎ）について、第ｋの電圧制御発振器の差動トランジスタと前記基準電圧生成回路のトランジスタとがカレントミラーで接続されているようにしてもよい。   In the oscillation circuits having the above-described configurations, for all k (k = 1 to n), the differential transistor of the kth voltage controlled oscillator and the transistor of the reference voltage generation circuit are connected by a current mirror. It may be.

このような構成によると、電圧制御発振器の差動トランジスタと基準電圧生成回路のトランジスタとがカレントミラーで接続されているので、電圧制御発振器の差動トランジスタと基準電圧生成回路のトランジスタとの面積比を電圧制御発振器毎に変えることで、無駄なく発振余裕度に応じた動作電流を各電圧制御発振器に与えることができる。   According to such a configuration, since the differential transistor of the voltage controlled oscillator and the transistor of the reference voltage generation circuit are connected by the current mirror, the area ratio of the differential transistor of the voltage controlled oscillator and the transistor of the reference voltage generation circuit By changing for each voltage controlled oscillator, an operating current corresponding to the oscillation margin can be provided to each voltage controlled oscillator without waste.

また、上記各構成の発振回路において、前記基準電圧生成回路を中心にしてその周辺に第１から第ｎの電圧制御発振器を配置し、前記基準電圧生成回路と第１から第ｎの電圧制御発振器それぞれとの距離が略等しいようにしてもよい。   Further, in the oscillation circuit having each configuration described above, the first to nth voltage controlled oscillators are arranged around the reference voltage generating circuit, and the reference voltage generating circuit and the first to nth voltage controlled oscillators are arranged. You may make it the distance with each substantially equal.

このような構成によると、基準電圧生成回路と電圧制御発振器それぞれとの間の配線抵抗が略等しくなるので、電圧制御発振器それぞれの差動トランジスタの入力ベース抵抗が略等しくなる。これにより、第１から第ｎの電圧制御発振器それぞれの動作電流の大小関係が設計と異なってしまう事態を回避することができる。   According to such a configuration, since the wiring resistance between the reference voltage generation circuit and each of the voltage controlled oscillators is substantially equal, the input base resistance of the differential transistor of each voltage controlled oscillator is substantially equal. As a result, it is possible to avoid a situation in which the magnitude relationship between the operating currents of the first to nth voltage controlled oscillators differs from the design.

また、上記目的を達成するために本発明に係る異常発振検査方法は、上記いずれかの構成の発振回路における異常発振の有無を検査する異常発振検査方法であって、前記発振回路が有する第１から第ｎの電圧制御発振器のうち動作電流が最も大きい電圧制御発振器についてのみ異常発振の有無を検査するようにしている。   In order to achieve the above object, an abnormal oscillation inspection method according to the present invention is an abnormal oscillation inspection method for inspecting the presence or absence of abnormal oscillation in an oscillation circuit having any one of the above-described configurations. Thus, only the voltage controlled oscillator having the largest operating current among the n th voltage controlled oscillators is inspected for the presence of abnormal oscillation.

このような異常発振検査方法によると、第１から第ｎの電圧制御発振器のうち動作電流が最も大きい電圧制御発振器についてのみ異常発振の有無を検査しているので、複数の電圧制御発振器を有する発振回路の異常発振検査にもかかわらず検査時間を短縮することができる。   According to such an abnormal oscillation inspection method, since the presence or absence of abnormal oscillation is inspected only for the voltage controlled oscillator having the largest operating current among the first to nth voltage controlled oscillators, the oscillation having a plurality of voltage controlled oscillators The inspection time can be shortened despite the abnormal oscillation inspection of the circuit.

また、上記目的を達成するために本発明に係る高周波受信機は、上記いずれかの構成の発振回路を備え、前記発振回路から出力される局部発振信号を用いて、高周波受信信号のダウンコンバートを行うようにしている。   In order to achieve the above object, a high frequency receiver according to the present invention includes an oscillation circuit having any one of the above configurations, and downconverts a high frequency reception signal using a local oscillation signal output from the oscillation circuit. Like to do.

また、上記目的を達成するために本発明に係る高周波送信機は、上記いずれかの構成の発振回路を備え、前記発振回路から出力される局部発振信号を用いて、高周波送信信号へのアップコンバートを行うようにしている。   In order to achieve the above object, a high-frequency transmitter according to the present invention includes an oscillation circuit having any one of the above-described configurations, and upconverts to a high-frequency transmission signal using a local oscillation signal output from the oscillation circuit. Like to do.

本発明によると、第１から第ｎの電圧制御発振器の差動トランジスタにベースバイアス電圧を供給する基準電圧生成回路が発振回路内に１つであるので、ベースバイアス電圧が揺らいだときに生じる発振周波数の揺らぎ量は、動作電流が最も大きい電圧制御発振器が最も多くなる。したがって、第１から第ｎの電圧制御発振器のうち動作電流が最も大きい電圧制御発振器についてのみ異常発振の有無を検査すれば十分であるので、発振回路が複数の電圧制御発振器を有するにもかかわらず異常発振の有無検査の検査時間を短縮することができる。   According to the present invention, since there is one reference voltage generation circuit in the oscillation circuit for supplying the base bias voltage to the differential transistors of the first to n-th voltage controlled oscillators, the oscillation that occurs when the base bias voltage fluctuates. The amount of frequency fluctuation is the highest in the voltage controlled oscillator having the largest operating current. Therefore, since it is sufficient to check the presence or absence of abnormal oscillation only for the voltage controlled oscillator having the largest operating current among the first to nth voltage controlled oscillators, the oscillation circuit has a plurality of voltage controlled oscillators. The inspection time for the presence or absence of abnormal oscillation can be shortened.

本発明の実施形態について図面を参照して以下に説明する。本発明に係る発振回路の構成例を図１に示す。   Embodiments of the present invention will be described below with reference to the drawings. A configuration example of an oscillation circuit according to the present invention is shown in FIG.

図１に示す本発明に係る発振回路は、動作電流がそれぞれ異なる値である第１から第ｎ（ｎは２以上の自然数）の電圧制御発振器ＶＣＯ１〜ＶＣＯｎと、１つの基準電圧生成回路ＲＶ０と、第１から第ｎ（ｎは２以上の自然数）のスイッチＳＷ１〜ＳＷｎとを備えている。そして、すべてのｋ（ｋ＝１〜ｎ）について、第ｋの電圧制御発振器ＶＣＯｋの直流バイアス入力端子Ｔ＿ｋと基準電圧生成回路ＲＶ０の直流バイアス出力端子Ｔ＿０との間に第ｋのスイッチＳＷｋが設けられており、第ｋのスイッチＳＷｋがオン状態のときに基準電圧生成回路ＲＶ０から第ｋの電圧制御発振器ＶＣＯｋの差動トランジスタ（図１において不図示）にベースバイアス電圧が供給される。   The oscillation circuit according to the present invention shown in FIG. 1 includes first to n-th (n is a natural number of 2 or more) voltage-controlled oscillators VCO1 to VConn having different operating currents, and one reference voltage generation circuit RV0. , First to nth (n is a natural number of 2 or more) switches SW1 to SWn. For all k (k = 1 to n), the kth switch SWk is provided between the DC bias input terminal T_k of the kth voltage controlled oscillator VCOk and the DC bias output terminal T_0 of the reference voltage generation circuit RV0. The base bias voltage is supplied from the reference voltage generation circuit RV0 to the differential transistor (not shown in FIG. 1) of the kth voltage controlled oscillator VCOk when the kth switch SWk is in the ON state.

図１に示す本発明に係る発振回路は、第１から第ｎの電圧制御発振器ＶＣＯ１〜ＶＣＯｎの差動トランジスタにベースバイアス電圧を供給する基準電圧生成回路ＲＶ０が１つであるので、ベースバイアス電圧が揺らいだときに生じる発振周波数の揺らぎ量は、動作電流が最も大きい電圧制御発振器が最も多くなる。したがって、第１から第ｎの電圧制御発振器ＶＣＯ１〜ＶＣＯｎのうち動作電流が最も大きい電圧制御発振器についてのみ異常発振の有無を検査すれば十分であるので、複数の電圧制御発振器を有するにもかかわらず異常発振の有無検査の検査時間を短縮することができる。   Since the oscillation circuit according to the present invention shown in FIG. 1 has one reference voltage generation circuit RV0 that supplies a base bias voltage to the differential transistors of the first to n-th voltage controlled oscillators VCO1 to VCON, The amount of fluctuation of the oscillation frequency that occurs when the voltage fluctuates is the largest in the voltage controlled oscillator having the largest operating current. Therefore, it is sufficient to check the presence or absence of abnormal oscillation only for the voltage controlled oscillator having the largest operating current among the first to nth voltage controlled oscillators VCO1 to VConn. The inspection time for the presence or absence of abnormal oscillation can be shortened.

図１に示す本発明に係る発振回路は、例えば、広い帯域に多数のチャンネルが存在する衛星放送用受信機やケーブルテレビ用受信機で用いられる場合、広い周波数帯域から１つのチャンネルを選択する動作を受信機が行う必要があるため、広い発振周波数レンジが要求される。第１から第ｎの電圧制御発振器ＶＣＯ１〜ＶＣＯｎをそれぞれ発振周波数帯域が異なる電圧制御発振器とし、第１から第ｎのスイッチＳＷ１〜ＳＷｎのうち１つのみをオン状態にして第１から第ｎの電圧制御発振器ＶＣＯ１〜ＶＣＯｎをのうち１つのみを選択し発振動作をさせることにより、上記要求を満たすことができる。   The oscillator circuit according to the present invention shown in FIG. 1 selects, for example, one channel from a wide frequency band when used in a satellite broadcast receiver or a cable television receiver having a large number of channels in a wide band. Therefore, a wide oscillation frequency range is required. The first to nth voltage controlled oscillators VCO1 to VConn are voltage controlled oscillators having different oscillation frequency bands, and only one of the first to nth switches SW1 to SWn is turned on to turn the first to nth voltage controlled oscillators. The above requirement can be satisfied by selecting only one of the voltage controlled oscillators VCO1 to VConn and performing an oscillation operation.

次に、図１に示す本発明に係る発振回路の具体的な回路構成例を図２に示す。   Next, a specific circuit configuration example of the oscillation circuit according to the present invention shown in FIG. 1 is shown in FIG.

基準電圧生成回路ＲＶ０は、トランジスタＴｒ１＿０と、定電圧ＶCが印加される端子とトランジスタＴｒ１＿０のコレクタとの間に設けられる直流電流源１＿０と、トランジスタＴｒ１＿０のエミッタとグランドとの間に設けられる抵抗Ｒ４＿０と、トランジスタＴｒ１＿０のベースに一端が接続されトランジスタＴｒ１＿０のコレクタ、直流電流源１＿０、及び直流バイアス出力端子Ｔ＿０に他端が接続される抵抗Ｒ１＿０とによって構成されている。 The reference voltage generation circuit RV0 includes a transistor Tr1_0, a direct current source 1_0 provided between a terminal to which the constant voltage V C is applied and the collector of the transistor Tr1_0, and a resistor provided between the emitter of the transistor Tr1_0 and the ground. R4_0 and one end connected to the base of the transistor Tr1_0, a collector of the transistor Tr1_0, a DC current source 1_0, and a resistor R1_0 connected to the DC bias output terminal T_0 are connected to the other end.

第１の電圧制御発振器ＶＣＯ１は、差動トランジスタＴｒ２＿１及びＴｒ３＿１と、差動トランジスタＴｒ２＿１のコレクタに一端が接続され定電圧ＶCが印加される端子に他端が接続されるインダクタＬ１＿１と、一端が差動トランジスタＴｒ３＿１のコレクタに接続され他端が定電圧ＶCが印加される端子に接続されるインダクタＬ２＿１と、差動トランジスタＴｒ２＿１のコレクタに一端が接続されチューニング電圧ＶTが印加される端子に他端が接続される可変容量素子Ｃ１＿１と、差動トランジスタＴｒ３＿１のコレクタに一端が接続されチューニング電圧ＶTが印加される端子に他端が接続される可変容量素子Ｃ２＿１と、差動トランジスタＴｒ２＿１のコレクタに一端が接続され差動トランジスタＴｒ３＿１のベースに他端が接続される固定コンデンサＣ３＿１と、差動トランジスタＴｒ３＿１のコレクタに一端が接続され差動トランジスタＴｒ２＿１のベースに他端が接続される固定コンデンサＣ４＿１と、差動トランジスタＴｒ２＿１のベースに一端が接続され直流バイアス入力端子Ｔ＿１に他端が接続される抵抗Ｒ２＿１と、差動トランジスタＴｒ３＿１のベースに一端が接続され直流バイアス入力端子Ｔ＿１に他端が接続される抵抗Ｒ３＿１と、差動トランジスタＴｒ２＿１及びＴｒ３＿１のエミッタとグランドとの間に設けられる抵抗Ｒ５＿１とによって構成されている。第２から第ｎの電圧制御発振器ＶＣＯ２〜ＶＣＯｎの構成は、第１の電圧制御発振器ＶＣＯ１の構成と基本的に同じであるので、ここでは詳細な説明を省略する。 The first voltage controlled oscillator VCO1 includes a differential transistor Tr2_1 and Tr3_1, an inductor L1_1 having one end connected to the collector of the differential transistor Tr2_1, and the other end connected to a terminal to which a constant voltage V C is applied, and one end An inductor L2_1 connected to the collector of the differential transistor Tr3_1 and the other end connected to a terminal to which a constant voltage V C is applied, and a terminal connected to the collector of the differential transistor Tr2_1 and applied with a tuning voltage V T The variable capacitance element C1_1 having the other end connected, the variable capacitance element C2_1 having one end connected to the collector of the differential transistor Tr3_1 and the other end connected to a terminal to which the tuning voltage V T is applied, and the differential transistor Tr2_1 One end is connected to the collector, and the other end is connected to the base of the differential transistor Tr3_1. Fixed capacitor C3_1, one end connected to the collector of the differential transistor Tr3_1, one end connected to the base of the differential transistor Tr2_1, and one end connected to the base of the differential transistor Tr2_1, and a DC bias input A resistor R2_1 having the other end connected to the terminal T_1, a resistor R3_1 having one end connected to the base of the differential transistor Tr3_1 and the other end connected to the DC bias input terminal T_1, the emitters of the differential transistors Tr2_1 and Tr3_1, and the ground And a resistor R5_1 provided between the two. The configuration of the second to nth voltage controlled oscillators VCO2 to VConn is basically the same as the configuration of the first voltage controlled oscillator VCO1, and therefore detailed description thereof is omitted here.

第１から第ｎの電圧制御発振器ＶＣＯ１〜ＶＣＯｎをそれぞれ発振周波数帯域が異なる電圧制御発振器とした場合、電圧制御発振器毎に発振余裕度が異なり必要とする動作電流が異なる。一般的に発振周波数が高い電圧制御発振器ではより多くの動作電流を必要とする。   When the first to n-th voltage controlled oscillators VCO1 to VCon are voltage controlled oscillators having different oscillation frequency bands, the required operating current differs depending on the voltage controlled oscillator. In general, a voltage controlled oscillator having a high oscillation frequency requires more operating current.

従来の発振回路においては図５に示したように電圧制御発振器毎に基準電圧生成回路が独立しているため、電圧制御発振器の差動トランジスタに供給されるベースバイアス電圧を電圧制御発振器毎に個別に調整し、電圧制御発振器毎に動作電流を個別に調整すればよかった。これに対して、本発明に係る発振回路においては図１及び図２に示したように基準電圧生成回路ＲＶ０が１つであるため電圧制御発振器の差動トランジスタに供給されるベースバイアス電圧を電圧制御発振器毎に個別に調整することはできない。   In the conventional oscillation circuit, since the reference voltage generation circuit is independent for each voltage controlled oscillator as shown in FIG. 5, the base bias voltage supplied to the differential transistor of the voltage controlled oscillator is individually set for each voltage controlled oscillator. The operating current should be adjusted individually for each voltage controlled oscillator. On the other hand, since the oscillation circuit according to the present invention has one reference voltage generation circuit RV0 as shown in FIGS. 1 and 2, the base bias voltage supplied to the differential transistor of the voltage controlled oscillator is set to the voltage. It cannot be adjusted individually for each controlled oscillator.

しかしながら、図２に示す回路構成では、第１から第ｎの電圧制御発振器ＶＣＯ１〜ＶＣＯｎの差動トランジスタと基準電圧生成回路ＲＶ０のトランジスタとがカレントミラーで接続されているので、第１から第ｎの電圧制御発振器ＶＣＯ１〜ＶＣＯｎの差動トランジスタと基準電圧生成回路ＲＶ０のトランジスタとの面積比を電圧制御発振器毎に変えることで、無駄なく発振余裕度に応じた動作電流を各電圧制御発振器に与えることができる。   However, in the circuit configuration shown in FIG. 2, the differential transistors of the first to nth voltage controlled oscillators VCO1 to VConn and the transistor of the reference voltage generation circuit RV0 are connected by a current mirror. By changing the area ratio of the differential transistors of the voltage controlled oscillators VCO1 to VConn and the transistors of the reference voltage generating circuit RV0 for each voltage controlled oscillator, an operating current corresponding to the oscillation margin is provided to each voltage controlled oscillator without waste. be able to.

第１の電圧制御発振器ＶＣＯ１の発振周波数帯域が最も高く、第２の電圧制御発振器ＶＣＯ２、第３の電圧制御発振器ＶＣＯ３、・・・となるに従って発振周波数帯域が低くなっていく設定にした場合、発振余裕度の問題から第１の電圧制御発振器ＶＣＯ１に最も大きい動作電流が必要となること及び低消費電力化を図ることを考慮し、基準電圧生成回路ＲＶ０のトランジスタに対する第１の電圧制御発振器ＶＣＯ１の差動トランジスタの面積比Ｎ１が最も大きく、基準電圧生成回路ＲＶ０のトランジスタに対する第２の電圧制御発振器ＶＣＯ２の差動トランジスタの面積比Ｎ２、基準電圧生成回路ＲＶ０のトランジスタに対する第３の電圧制御発振器ＶＣＯ３の差動トランジスタの面積比Ｎ３、・・・となるに従って小さくなるようにすること、すなわち、Ｎ１＞Ｎ２＞・・・＞Ｎｎとなるようにすることが望ましい。   When the oscillation frequency band of the first voltage controlled oscillator VCO1 is the highest, and the oscillation frequency band is set to become lower as the second voltage controlled oscillator VCO2, the third voltage controlled oscillator VCO3,. The first voltage controlled oscillator VCO1 for the transistor of the reference voltage generation circuit RV0 is considered in consideration of the necessity of the largest operating current for the first voltage controlled oscillator VCO1 due to the problem of oscillation margin and the reduction of power consumption. The differential transistor area ratio N1 is the largest, the differential voltage area ratio N2 of the differential transistor of the second voltage controlled oscillator VCO2 with respect to the transistor of the reference voltage generating circuit RV0, and the third voltage controlled oscillator with respect to the transistor of the reference voltage generating circuit RV0. As the area ratio N3 of the differential transistor of VCO3 becomes N3,... If, namely, it is desirable to be N1> N2> ···> Nn.

また、第１から第ｎの電圧制御発振器ＶＣＯ１〜ＶＣＯｎの差動トランジスタと基準電圧生成回路ＲＶ０のトランジスタとがカレントミラーで接続されているので、上記面積比に応じて、抵抗Ｒ２＿１及びＲ３＿１の抵抗値をそれぞれ抵抗Ｒ１＿０の抵抗値をＮ１で除した値、抵抗Ｒ５＿１の抵抗値を抵抗Ｒ４＿０の抵抗値を（２×Ｎ１）で除した値とし、以下同様に、抵抗Ｒ２＿２及びＲ３＿２の抵抗値をそれぞれ抵抗Ｒ１＿０の抵抗値をＮ２で除した値、抵抗Ｒ５＿２の抵抗値を抵抗Ｒ４＿０の抵抗値を（２×Ｎ２）で除した値とし、・・・、抵抗Ｒ２＿ｎ及びＲ３＿ｎの抵抗値をそれぞれ抵抗Ｒ１＿０の抵抗値をＮｎで除した値、抵抗Ｒ５＿ｎの抵抗値を抵抗Ｒ４＿０の抵抗値を（２×Ｎｎ）で除した値とすることが望ましい。   In addition, since the differential transistors of the first to nth voltage controlled oscillators VCO1 to VConn and the transistor of the reference voltage generation circuit RV0 are connected by a current mirror, the resistances of the resistors R2_1 and R3_1 according to the area ratio. The resistance value of the resistor R1_0 is divided by N1, the resistance value of the resistor R5_1 is divided by the resistance value of the resistor R4_0 by (2 × N1), and similarly, the resistance values of the resistors R2_2 and R3_2 are set as follows. The resistance value of the resistor R1_0 is divided by N2, the resistance value of the resistor R5_2 is divided by the resistance value of the resistor R4_0 by (2 × N2), and the resistance values of the resistors R2_n and R3_n are respectively resistances. It is desirable that the resistance value of R1_0 is divided by Nn, and the resistance value of the resistor R5_n is a value obtained by dividing the resistance value of the resistor R4_0 by (2 × Nn).

次に、本発明に係る発振回路の回路配置例を図３に示す。図３に示す回路配置では、基準電圧生成回路ＲＶ０を中心にしてその周辺に第１から第ｎの電圧制御発振器ＶＣＯ１〜ＶＣＯｎを配置し、基準電圧生成回路ＲＶ０と第１から第ｎの電圧制御発振器ＶＣＯ１〜ＶＣＯｎそれぞれとの距離を略等しくしている。より詳細には、基準電圧生成回路ＲＶ０の直流バイアス出力端子Ｔ＿０と第１から第ｎの電圧制御発振器ＶＣＯ１〜ＶＣＯｎそれぞれの直流バイアス入力端子Ｔ＿１〜Ｔ＿ｎとの距離を略等しくしている。   Next, FIG. 3 shows a circuit arrangement example of the oscillation circuit according to the present invention. In the circuit arrangement shown in FIG. 3, the first to nth voltage controlled oscillators VCO1 to VConn are arranged around the reference voltage generation circuit RV0, and the reference voltage generation circuit RV0 and the first to nth voltage control are arranged. The distances from the oscillators VCO1 to VConn are made substantially equal. More specifically, the distances between the DC bias output terminal T_0 of the reference voltage generation circuit RV0 and the DC bias input terminals T_1 to T_n of the first to n-th voltage controlled oscillators VCO1 to VConn are substantially equal.

このような回路配置によると、基準電圧生成回路ＲＶ０と第１から第ｎの電圧制御発振器ＶＣＯ１〜ＶＣＯｎそれぞれとの間の配線抵抗が略等しくなるので、第１から第ｎの電圧制御発振器ＶＣＯ１〜ＶＣＯｎそれぞれの差動トランジスタの入力ベース抵抗が略等しくなる。これにより、第１から第ｎの電圧制御発振器ＶＣＯ１〜ＶＣＯｎそれぞれの動作電流の大小関係が設計と異なってしまう事態を回避することができる。なお、基準電圧生成回路ＲＶ０と第１から第ｎの電圧制御発振器ＶＣＯ１〜ＶＣＯｎそれぞれとの距離はでき得る限り短くし、基準電圧生成回路ＲＶ０と第１から第ｎの電圧制御発振器ＶＣＯ１〜ＶＣＯｎそれぞれとの間の配線抵抗をでき得る限り小さくすることが望ましい。   According to such a circuit arrangement, the wiring resistance between the reference voltage generation circuit RV0 and each of the first to n-th voltage controlled oscillators VCO1 to VConn becomes substantially equal, so the first to n-th voltage controlled oscillators VCO1 to VCO1 The input base resistance of each differential transistor of VCon becomes substantially equal. As a result, it is possible to avoid a situation where the magnitude relationship between the operating currents of the first to nth voltage controlled oscillators VCO1 to VConn differs from the design. The distance between the reference voltage generating circuit RV0 and each of the first to nth voltage controlled oscillators VCO1 to VConn is as short as possible, and the reference voltage generating circuit RV0 and each of the first to nth voltage controlled oscillators VCO1 to VConn are each reduced. It is desirable to make the wiring resistance between the two as small as possible.

次に、本発明に係る電圧制御発振器を備えた高周波送受信機の構成例を図４に示す。
図４に示す高周波送受信機は、アンテナ１１と、スイッチ１２と、ＬＮＡ（Low Noise Amplifier）１３及び２３と、ミキサ１４及び２２と、可変利得アンプ１５と、バンドパスフィルタ１６及び２１と、アンプ１７と、復調器１８と、変調器２０と、本発明に係る発振回路１９とを備えており、スイッチ１２の接点選択切り替えにより、受信動作と送信動作とを切り替える。 Next, FIG. 4 shows a configuration example of a high frequency transmitter / receiver provided with a voltage controlled oscillator according to the present invention.
4 includes an antenna 11, a switch 12, LNAs (Low Noise Amplifiers) 13 and 23, mixers 14 and 22, a variable gain amplifier 15, bandpass filters 16 and 21, and an amplifier 17. A demodulator 18, a modulator 20, and an oscillation circuit 19 according to the present invention, and the reception operation and the transmission operation are switched by switching the contact selection of the switch 12.

受信時には、アンテナ１１から入力された高周波受信信号は、ＬＮＡ１３にて増幅された後、ミキサ１４で本発明に係る発振回路１９から出力される局部発振信号とのミキシングによりダウンコンバートされ、その後可変利得アンプ１５にて増幅され、バンドパスフィルタ１６で不要な周波数成分がカットされ、さらにアンプ１７にて増幅されて復調器１８に送られる。逆に、送信時には、変調器２０から送出された送信信号は、バンドパスフィルタ２１で不要な周波数成分がカットされ、ミキサ２２にて本発明に係る発振回路１９から出力される局部発振信号とのミキシングにより高周波送信信号へとアップコンバートされ、パワーアンプにて電力増幅された後アンテナ１１から送信される。   At the time of reception, the high-frequency reception signal input from the antenna 11 is amplified by the LNA 13 and then down-converted by the mixer 14 by mixing with the local oscillation signal output from the oscillation circuit 19 according to the present invention. Amplified by the amplifier 15, unnecessary frequency components are cut by the band pass filter 16, further amplified by the amplifier 17, and sent to the demodulator 18. On the contrary, at the time of transmission, an unnecessary frequency component is cut from the transmission signal transmitted from the modulator 20 by the band pass filter 21, and the local oscillation signal output from the oscillation circuit 19 according to the present invention by the mixer 22. The signal is up-converted into a high-frequency transmission signal by mixing, amplified by a power amplifier, and then transmitted from the antenna 11.

図４に示す高周波送受信機は、本発明に係る発振回路１９を局部発振回路として利用しているので、本発明に係る発振回路１９内の電圧制御発振器の選択を切り替えることで、広い局部発振周波数レンジをカバーすることができ、個々の電圧制御発振器においては発振周波数レンジが狭いため位相雑音特性の劣化が起こりにくい。   Since the high-frequency transceiver shown in FIG. 4 uses the oscillation circuit 19 according to the present invention as a local oscillation circuit, a wide local oscillation frequency can be obtained by switching the selection of the voltage controlled oscillator in the oscillation circuit 19 according to the present invention. The range can be covered, and in each voltage controlled oscillator, since the oscillation frequency range is narrow, the phase noise characteristic is hardly deteriorated.

は、本発明に係る発振回路の構成例を示す図である。These are figures which show the structural example of the oscillation circuit which concerns on this invention. は、図１に示す本発明に係る発振回路の具体的な回路構成例を示す図である。These are figures which show the concrete circuit structural example of the oscillation circuit which concerns on this invention shown in FIG. は、本発明に係る発振回路の回路配置例を示す図である。These are figures which show the example of circuit arrangement | positioning of the oscillation circuit which concerns on this invention. は、本発明に係る電圧制御発振器を備えた送受信機の構成例を示す図である。These are figures which show the structural example of the transmitter / receiver provided with the voltage controlled oscillator which concerns on this invention. は、複数の電圧制御発振器を有する従来の発振回路の構成例を示す図である。These are figures which show the example of a structure of the conventional oscillation circuit which has several voltage control oscillators. は、バイポーラトランジスタのエネルギーバンド図である。FIG. 3 is an energy band diagram of a bipolar transistor. は、図５に示す従来の発振回路の部分拡大図である。These are the elements on larger scale of the conventional oscillation circuit shown in FIG.

符号の説明Explanation of symbols

１１ アンテナ
１２ スイッチ
１３ ＬＮＡ
１４、２２ ミキサ
１５ 可変利得アンプ
１６、２１ バンドパスフィルタ
１７ アンプ
１８ 復調器
１９ 本発明に係る発振回路
２０ 変調器
２３ パワーアンプ
ＲＶ０ 基準電圧生成回路
ＳＷ１〜ＳＷｎ 第１から第ｎのスイッチ
Ｔ＿０ 直流バイアス出力端子
Ｔ＿１〜Ｔ＿ｎ 直流バイアス入力端子
ＶＣＯ１〜ＶＣＯｎ 第１から第ｎの電圧制御発振器 11 Antenna 12 Switch 13 LNA
14, 22 Mixer 15 Variable gain amplifier 16, 21 Band pass filter 17 Amplifier 18 Demodulator 19 Oscillation circuit 20 modulator 23 power amplifier RV0 reference voltage generation circuit SW1 to SWn 1st to nth switches T_0 DC bias Output terminals T_1 to T_n DC bias input terminals VCO1 to VConn 1st to nth voltage controlled oscillators

Claims (7)

動作電流がそれぞれ異なる値である第１から第ｎ（ｎは２以上の自然数）の電圧制御発振器と、１つの基準電圧生成回路と、第１から第ｎ（ｎは２以上の自然数）のスイッチとを備え、
すべてのｋ（ｋ＝１〜ｎ）について、第ｋの電圧制御発振器と前記基準電圧生成回路との間に第ｋのスイッチが設けられており、第ｋのスイッチがオン状態のときに前記基準電圧生成回路から第ｋの電圧制御発振器の差動トランジスタにベースバイアス電圧が供給されることを特徴とする発振回路。 First to nth (n is a natural number greater than or equal to 2) voltage controlled oscillators, one reference voltage generation circuit, and first to nth (n is a natural number greater than or equal to 2) switch having different operating current values And
For all k (k = 1 to n), a kth switch is provided between the kth voltage controlled oscillator and the reference voltage generation circuit, and the reference when the kth switch is in the ON state. An oscillation circuit, wherein a base bias voltage is supplied from a voltage generation circuit to a differential transistor of a kth voltage controlled oscillator. 第１から第ｎの電圧制御発振器はそれぞれ発振周波数帯域が異なる電圧制御発振器であり、
第１から第ｎのスイッチのうち１つのみをオン状態にして第１から第ｎの電圧制御発振器のうち１つのみを選択し発振動作をさせる請求項１に記載の発振回路。 The first to nth voltage controlled oscillators are voltage controlled oscillators having different oscillation frequency bands,
2. The oscillation circuit according to claim 1, wherein only one of the first to n-th switches is turned on to select only one of the first to n-th voltage-controlled oscillators to perform an oscillation operation. すべてのｋ（ｋ＝１〜ｎ）について、第ｋの電圧制御発振器の差動トランジスタと前記基準電圧生成回路のトランジスタとがカレントミラーで接続されている請求項１又は請求項２に記載の発振回路。   3. The oscillation according to claim 1, wherein, for all k (k = 1 to n), the differential transistor of the kth voltage controlled oscillator and the transistor of the reference voltage generation circuit are connected by a current mirror. circuit. 前記基準電圧生成回路を中心にしてその周辺に第１から第ｎの電圧制御発振器を配置し、前記基準電圧生成回路と第１から第ｎの電圧制御発振器それぞれとの距離が略等しい請求項１〜３のいずれか１項に記載の発振回路。   The first to nth voltage controlled oscillators are arranged around the reference voltage generation circuit, and the distances between the reference voltage generation circuit and the first to nth voltage controlled oscillators are substantially equal. The oscillation circuit according to any one of? 請求項１〜４のいずれか１項に記載の発振回路における異常発振の有無を検査する異常発振検査方法であって、
前記発振回路が有する第１から第ｎの電圧制御発振器のうち動作電流が最も大きい電圧制御発振器についてのみ異常発振の有無を検査することを特徴とする異常発振検査方法。 An abnormal oscillation inspection method for inspecting the presence or absence of abnormal oscillation in the oscillation circuit according to any one of claims 1 to 4,
An abnormal oscillation inspection method, wherein only the voltage controlled oscillator having the largest operating current among the first to nth voltage controlled oscillators included in the oscillation circuit is inspected for the presence of abnormal oscillation. 請求項１〜４のいずれか１項に記載の発振回路を備え、前記発振回路から出力される局部発振信号を用いて、高周波受信信号のダウンコンバートを行うことを特徴とする高周波受信機。   A high-frequency receiver comprising the oscillation circuit according to claim 1, wherein a high-frequency reception signal is down-converted using a local oscillation signal output from the oscillation circuit. 請求項１〜４のいずれか１項に記載の発振回路を備え、前記発振回路から出力される局部発振信号を用いて、高周波送信信号へのアップコンバートを行うことを特徴とする高周波送信機。   5. A high frequency transmitter comprising the oscillation circuit according to claim 1 and performing up-conversion to a high frequency transmission signal using a local oscillation signal output from the oscillation circuit.
JP2007326679A 2007-12-19 2007-12-19 Oscillation circuit, method of inspecting abnormal oscillation, high frequency receiver, and high frequency transmitter Pending JP2009152704A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016058788A (en) * 2014-09-05 2016-04-21 株式会社日立製作所 High frequency integrated circuit and device employing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016058788A (en) * 2014-09-05 2016-04-21 株式会社日立製作所 High frequency integrated circuit and device employing the same

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