JP2009152248A5 - - Google Patents

Claims (14)

First adherend having a first bonding film composed of polycrystalline silicon including providing et Re S i-H bond to at least a portion of the region on the first substrate and the first substrate And a second adherend comprising a second base film and a second bonding film that is provided in at least a part of the second base material and is made of polycrystalline silicon containing Si—H bonds. Are bonded via the first bonding film and the second bonding film,
Of the first bonding film and the second bonding film , energy is applied to at least a part of the predetermined region, and the Si—H bonds on the surfaces of the first bonding film and the second bonding film are formed. by cutting, as the first bonding film and the second factory where Ru to develop adhesion predetermined region of the bonding film and the,
The first adherend and the second adherend are combined with the first bond film and the second adherend so that the predetermined regions of the first bond film and the second bond film are in close contact with each other. bonded via a second bonding film, the bonding method characterized by comprising the conjugates as obtained Ru engineering, a. The first bonding film and the second bonding film bonding method according to claim 1 and is formed by epitaxial growth definitive under hydrogen atmosphere using a raw material gas to the silane gas as a main component. The first bonding film and the second bonding film, to film formed by epitaxial growth using a raw material gas to the silane gas as a main component, one of the etching and hydrogen plasma treatment with a hydrofluoric acid-containing solution The joining method according to claim 1, wherein at least one kind is applied.   The bonding method according to claim 2, wherein the silane-based gas is a monosilane gas. The first base material and the second base material have a seed layer made of crystalline silicon in advance in a region where the first bonding film and the second bonding film are formed,
The first bonding film and the second bonding film, the bonding method according to any one of claims 2 to 4 on the seed layer and is formed by homoepitaxial growth. The first bonding film and the second bonding film, compared configured films of amorphous silicon, by heat treatment under hydrogen atmosphere according to claim 1 wherein the amorphous silicon is made by crystallizing Joining method. The bonding method according to claim 1, wherein a content ratio of hydrogen atoms in the first bonding film and the second bonding film is 1 to 40 atomic%. The average particle size of the crystal of the polycrystalline silicon, the bonding method according to any one of claims 1 to 7 is 10 nm to 100 [mu] m. In the second step, energy is applied to a predetermined region of the first bonding film and a part of the second bonding film ,
In the third step, the first adherend and the second adherend are bonded so that the predetermined regions of the first bonding film and the second bonding film overlap each other. the bonding method according to any one of claims 1 to 8 joining the partially. Application of energy to the first bonding film and the second bonding film is performed by irradiating the first bonding film and the second bonding film with energy rays, the first bonding film, and the second bonding film. The method according to any one of claims 1 to 9 , which is performed by at least one of a method of heating the bonding film and a method of applying a compressive force to the first bonding film and the second bonding film . Joining method. The bonding method according to any one of claims 1 to 1 0, assembly characterized by comprising bonding the second substrate and the first substrate. The first bonding film included in the first adherend is made of p-type polycrystalline silicon containing Si—H bonds, and the second bonding film included in the second adherend. Is composed of n-type polycrystalline silicon containing Si—H bonds,
Wherein these first adherend and the second adherend is, by joined by a bonding method according to any one of claims 1 to 1 0, and the first adherend A semiconductor device, wherein a bonding interface with a second adherend is a pn junction. The first bonding film included in the first adherend is made of p-type polycrystalline silicon containing Si—H bonds or n-type polycrystalline silicon containing Si—H bonds, and The second bonding film included in the adherend of No. 2 is made of i-type polycrystalline silicon containing Si—H bonds,
Wherein these first adherend and the second adherend is, by joined by a bonding method according to any one of claims 1 to 1 0, and the first adherend A semiconductor device, wherein a junction interface with a second adherend is a pi junction or a ni junction. The photoelectric conversion element comprising the semiconductor device according to claim 1 2 or 1 3.