JP2009145835A - Liquid crystal device, manufacturing method therefor, and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a liquid crystal device capable of reducing light leakage generated by reflecting a light emitted from a lighting system and reflected in an outer face of a reflecting layer, on a face in a liquid crystal layer side of an interconnection layer, and capable of enhancing a contrast, a manufacturing method therefor, and electronic equipment. <P>SOLUTION: A light scattering means comprising a metal film 6a2 and a protrusion 6c is formed on the face in the liquid crystal layer side of the interconnection layer 6a1. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a liquid crystal device, a manufacturing method thereof, and an electronic apparatus.

Conventionally, a reflective transflective liquid crystal device including a reflective layer and a film having light diffusibility is known. As such a liquid crystal device, a device that includes a transparent step film and prevents the generation of interference colors of light during reflective display and the deterioration of display quality during transmissive display is disclosed (for example, see Patent Document 1). ).
JP 2006-171424 A

  However, in the conventional liquid crystal device, as shown in FIG. 8, the light L emitted from the illumination device such as the backlight 61 and reflected by the back surface of the reflective layer 29 (the surface opposite to the liquid crystal layer 50) Reflected again by the surface of the wiring layer such as the data line 6 on the liquid crystal layer 50 side, the reflected light RL is emitted from the gap between the reflective layer 29 and the light shielding portion 224 to the viewing side. When such light leakage due to the wraparound of light occurs, there is a problem that the contrast of the liquid crystal device is lowered.

  Therefore, the present invention reduces the light leakage that occurs when the light emitted from the lighting device and reflected on the outer surface side of the reflective layer is reflected on the liquid crystal layer side surface of the wiring layer, thereby improving the contrast. A liquid crystal device, a method of manufacturing the same, and an electronic apparatus are provided.

  In order to solve the above problems, in the liquid crystal device of the present invention, a liquid crystal layer is sandwiched between a first substrate and a second substrate, a wiring layer and a reflective layer are formed on the first substrate, The reflective layer is a liquid crystal device disposed on the liquid crystal layer side of the wiring layer, and an illuminating device is disposed on the opposite side of the first substrate from the liquid crystal layer, the reflective layer being disposed on the liquid crystal layer side of the wiring layer. A liquid crystal device, wherein light scattering means is formed on a surface.

  With this configuration, when light emitted from the lighting device and reflected from the outer surface side of the reflective layer, that is, the surface opposite to the liquid crystal layer, enters the surface of the wiring layer on the liquid crystal layer side, Scattered by the scattering means. Therefore, the reflected light that is reflected by the wiring layer toward the liquid crystal layer and causes light leakage of the liquid crystal device can be reduced. Thereby, light leakage is reduced and the contrast of the liquid crystal device can be improved.

  In the liquid crystal device of the present invention, the light scattering means includes a plurality of protrusions formed on a surface of the wiring layer on the liquid crystal layer side, and the protrusions stacked on the liquid crystal layer side of the wiring layer. And a metal film having a plurality of convex portions formed thereon.

  With this configuration, the surface of the wiring layer on the liquid crystal layer side is covered with a metal film having a plurality of convex portions. Therefore, the light incident on the surface of the wiring layer on the liquid crystal layer side is scattered by the plurality of convex portions.

  In the liquid crystal device according to the present invention, the thermal expansion coefficient of the wiring layer is larger than the thermal expansion coefficient of the metal film.

  With this configuration, when a metal film is formed on the wiring layer in a state where the wiring layer is thermally expanded and then cooled, stress migration occurs between the wiring layer and the metal film, and the surface of the wiring layer And a plurality of protrusions are formed on the surface of the metal film on the liquid crystal layer side.

  In the liquid crystal device of the present invention, the thickness of the metal film is in the range of 10 nm to 300 nm.

  With this configuration, when stress migration occurs between the wiring layer and the metal film, a protrusion can be formed on the surface of the metal film on the liquid crystal layer side by the protrusion formed on the wiring layer.

  In the liquid crystal device of the present invention, the wiring layer is made of aluminum, and the metal film is made of titanium.

  With this configuration, when stress migration occurs between the wiring layer and the metal film due to the difference in thermal expansion coefficient between aluminum and titanium, the protrusions of the wiring layer penetrate the metal film, Projections are formed protruding from the surface on the liquid crystal layer side.

  In the method for manufacturing a liquid crystal device of the present invention, a liquid crystal layer is sandwiched between a first substrate and a second substrate, a wiring layer and a reflective layer are formed on the first substrate, and the reflective layer is A method of manufacturing a liquid crystal device in which an illumination device is disposed on a liquid crystal layer side of a wiring layer and on a side opposite to the liquid crystal layer of the first substrate, wherein the wiring layer is heated and expanded. Forming a metal film having a smaller coefficient of thermal expansion than the wiring layer on the wiring layer; cooling and shrinking the wiring layer and the metal film; and the wiring layer and the metal A cooling step of forming a plurality of protrusions on the surface of the wiring layer on the liquid crystal layer side due to a difference in thermal expansion coefficient from the film, and forming a plurality of protrusions on the metal film by the protrusions. It is characterized by that.

By manufacturing in this way, a metal film is formed on the thermally expanded wiring layer, and when the wiring layer and the metal film are cooled, the stress migration is caused by the difference in the coefficient of thermal expansion between the wiring layer and the metal film. And a plurality of protrusions are formed on the surface of the wiring layer on the liquid crystal layer side. The protrusions form a plurality of convex portions on the surface of the metal film on the liquid crystal layer side. Thereby, the light reflected on the outer surface side of the reflection layer and incident on the liquid crystal layer side of the wiring layer is scattered by the light scattering means constituted by the protrusions of the wiring layer and the metal film.
Accordingly, it is possible to reduce the reflected light that is reflected on the liquid crystal layer side of the wiring layer and causes the light leakage of the liquid crystal device. As a result, light leakage that occurs when the light reflected on the outer surface side of the reflective layer is reflected on the liquid crystal layer side is reduced, and the contrast of the liquid crystal device can be improved.

  The method for manufacturing a liquid crystal device according to the present invention is characterized in that, in the film forming step, the metal film is formed in a state where the wiring layer is heated.

  By manufacturing in this way, the heating process and the film forming process can be performed collectively, and the productivity of the liquid crystal device can be improved.

  The method for manufacturing a liquid crystal device according to the present invention is characterized in that, in the heating step, the wiring layer is heated in a temperature range of 200 ° C. to 400 ° C.

  By manufacturing in this way, the wiring layer and the metal film can be expanded to a state where stress migration is likely to occur, and a plurality of protrusions can be reliably formed on the surface of the metal film on the liquid crystal layer side.

  The method for manufacturing a liquid crystal device according to the present invention is characterized in that, in the cooling step, the wiring layer is cooled to a temperature of room temperature or lower.

  By manufacturing in this way, the wiring layer and the metal film can be contracted to a state where stress migration is likely to occur, and a plurality of convex portions can be reliably formed on the surface of the metal film on the liquid crystal layer side.

  Moreover, an electronic apparatus according to the present invention includes the above-described liquid crystal device. Therefore, light leakage during display is reduced, contrast is improved, and an electronic device with high display quality can be provided.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following drawings, the dimensions and scales of the structures in the drawings are appropriately changed in order to clearly show the characteristic portions of the structures.

FIG. 1 is a circuit configuration diagram of a pixel 200 constituting the liquid crystal device 100 of this embodiment. As shown in FIG. 1, a large number of pixels 200 are arranged in a matrix, and each pixel 200 is formed with a pixel electrode 9 and a TFT 30. The TFT 30 is a switching element that performs switching control of the pixel 200. A data line 6 a extending from a data line driving circuit (not shown) is electrically connected to the source of the TFT 30, and a pixel electrode 9 is electrically connected to the drain of the TFT 30. The data line driving circuit supplies the image signals S1, S2,..., Sn to the respective pixels 200 via the data line 6a.
In the case of an electro-optical device for full color display, the minimum unit of full color display is composed of a plurality of single color display units, for example, red, blue, and green. In this case, the pixel corresponding to the single color display unit is referred to as a sub-pixel. That is, in the case of a full-color display liquid crystal device, the pixel 200 is referred to as a sub-pixel.

  A scanning line 3 a extending from a scanning line driving circuit (not shown) is electrically connected to the gate of the TFT 30. The scanning signals G1, G2,..., Gm supplied from the scanning line driving circuit to the scanning line 3a at a predetermined timing are applied to the gates of the TFTs 30 in this order. When the scanning signals G1 to Gm are applied to the gate of the TFT 30, the gate and source of the TFT 30 are turned on for a certain period, and the image signals S1 to Sn supplied from the data line 6a are applied to the pixel electrode 9 at a predetermined timing. It is to be written.

  The pixel electrode 9 faces a common electrode described later, and a liquid crystal capacitor is formed between the pixel electrode 9 and the common electrode. Further, the pixel 200 is provided with a storage capacitor 70 connected between the drain of the TFT 30 and the pixel electrode 9 as well as being connected to the capacitor line 3b provided in parallel with the scanning line 3a. The liquid crystal capacitor and the storage capacitor 70 are connected in parallel, and image signals S1 to Sn of a predetermined level written in the pixel electrode 9 are held in the liquid crystal capacitor and the storage capacitor 70 for a certain period. By providing the storage capacitor 70, the image signal held in the liquid crystal capacitor is prevented from leaking.

FIG. 2 is an enlarged plan view showing the pixel 200. The pixel 200 is a substantially rectangular region surrounded by the scanning lines 3a and the data lines 6a. Here, the direction parallel to the short side is defined as the X direction, and the direction parallel to the long side is defined as the Y direction. The pixel 200 has a transmissive display region T and a reflective display region R that are sequentially arranged in the Y direction. Here, all the regions are substantially rectangular, and in the Y direction, the side where the reflective display region R is located is the Y positive direction, and the side where the transmissive display region T is located is the Y negative direction.
The pixel 200 includes a pixel electrode 9 provided over the reflective display region R and the transmissive display region T, and a reflective layer 29 provided in the reflective display region R. In addition, columnar spacers 40 are provided in the gaps between the pixels 200 to hold a first substrate and a second substrate, which will be described later, at a predetermined distance.

The pixel electrode 9 is made of a transparent conductive material such as ITO (indium tin oxide), and the reflective layer 29 is a light reflective metal film such as aluminum or silver, or a dielectric film having a different refractive index. It consists of a dielectric laminated film (dielectric mirror) in which (SiO ₂ and TiO ₂ or the like) are laminated.
In the vicinity of the pixel 200, a data line 6a extending in the Y direction, a scanning line 3a extending in the X direction, and a capacitance line 3b extending in parallel with the scanning line 3a adjacent to the scanning line 3a are formed. A TFT 30 is provided in the vicinity of the intersection of the data line 6a and the scanning line 3a. The TFT 30 includes a semiconductor layer 35 made of an island-shaped amorphous silicon film partially formed in the planar region of the scanning line 3a, a source 6b formed partially overlapping the semiconductor layer 35, and a drain 32. And. The scanning line 3 a functions as a gate of the TFT 30 at a position overlapping the semiconductor layer 35 in plan view.

  The source 6b of the TFT 30 has a substantially L shape in plan view extending from the data line 6a and extending to the semiconductor layer 35, and the drain 32 extends from the semiconductor layer 35 toward the pixel electrode 9 and extends to the pixel electrode 9 side. And are electrically connected. A contact portion of the pixel electrode 9 is disposed on the capacitor electrode 31, and the capacitor electrode 31 and the pixel electrode 9 are electrically connected through a pixel contact hole 45 provided at a position where both of them overlap in a plane. Has been. The capacitor electrode 31 is disposed in the plane region of the capacitor line 3b, and a storage capacitor is formed at this position using the capacitor electrode 31 and the capacitor line 3b facing each other in the thickness direction.

  FIG. 3 is a partial cross-sectional configuration diagram taken along the line A-A ′ of FIG. 2. The liquid crystal device 100 includes a first substrate 10 and a second substrate 20 that are disposed to face each other, and a liquid crystal layer 50 that is sandwiched between these substrates. The edge part of the 1st board | substrate 10 and the edge part of the 2nd board | substrate 20 are bonded together by the sealing material (not shown), and the liquid crystal layer 50 is sealed between these board | substrates. A phase difference plate 71 and a polarizing plate 14 are provided on the outer surface side of the first substrate 10 (the side opposite to the liquid crystal layer 50), and a phase difference plate 72 and a polarizing plate are provided on the outer surface side of the second substrate 20. 24 is provided. A backlight (illuminating device) 61 including a light source, a light guide plate, a reflection plate, and the like is provided on the outer surface side of the polarizing plate 14.

  The first substrate 10 has a transparent substrate 11 made of glass, quartz, plastic, or the like as a base, and scanning lines 3a and capacitance lines 3b are formed on the inner surface side of the transparent substrate 11, and the scanning lines 3a and capacitance lines are formed. A gate insulating film 12 is formed to cover 3b. A semiconductor layer 35 is selectively formed on the gate insulating film 12, and a source 6 b and a drain 32 are formed so as to partially run over the semiconductor layer 35. A capacitor electrode 31 is formed integrally with the drain 32 on the opposite side of the drain 32 from the source 6b. The semiconductor layer 35 is disposed to face the scanning line 3a via the gate insulating film 12, and the scanning line 3a functions as a gate of the TFT 30 in the facing region. The capacitor electrode 31 is disposed opposite to the capacitor line 3b via the gate insulating film 12, and a storage capacitor using the gate insulating film 12 as a dielectric film is formed in a region where the capacitor electrode 31 and the capacitor line 3b are opposed to each other. Has been.

  An interlayer insulating film 13 is provided so as to cover the TFT 30, and a pixel contact hole 45 is provided through the interlayer insulating film 13 on the capacitor electrode 31. A source electrode 15 is provided on the interlayer insulating film 13 inside the pixel contact hole 45 and around the pixel contact hole 45. The source electrode 15 is in direct contact with the capacitive electrode 31 and is in conduction therewith. Further, the source electrode 15 of this example has a three-layer structure of a Ti layer, an Al layer, and a Ti layer in order from the upper surface side. As a material for the source electrode, TiN (titanium nitride), Ta (tantalum), TaN (tantalum nitride), W (tungsten), Cr (chromium), or the like can be used. The structure may be a multilayer structure of four or more layers.

A protective film 16 is provided so as to cover the interlayer insulating film 13 and the source electrode 15. As a material of the protective film, SiN (silicon nitride), SiO ₂ (silicon oxide), or the like can be used. Here, the protective film 16 made of SiN and having a thickness of about 100 nm is employed. Further, an unevenness forming layer 17 is provided so as to cover the protective film 16. As the material of the unevenness forming layer, a positive photosensitive resin can be used, and specifically, an acrylic resin, a polyimide resin, or the like can be given. The upper surface side of the unevenness forming layer 17 has a smooth wavefront shape in the reflective display region R, and a reflective layer 29 is provided to cover this portion. The upper surface side of the reflective layer 29 has a wavefront shape, and the reflective layer 29 reflects and scatters light incident from the second substrate 20 side. Thereby, the intensity | strength of reflected light is equalized and a display nonuniformity can be reduced.

  Further, an opening 18 is provided through the unevenness forming layer 17 on the source electrode 15, and covers the inner wall of the opening 18, the source electrode 15 inside the opening 18, and the unevenness forming layer 17 so as to cover the pixel electrode. 9 is provided. The pixel electrode 9 is in contact with the source electrode 15 and is in conduction therewith. That is, the pixel electrode 9 is electrically connected to the drain 32 of the TFT 30. Further, an alignment film 19 made of polyimide or the like is provided so as to cover the pixel electrode 9.

  The second substrate 20 has a transparent substrate 21 made of glass, quartz, plastic, or the like as a base. On the inner surface side (liquid crystal layer 50 side) of the transparent substrate 21, a color filter 22, a common electrode 23, and an alignment film 25 are provided. Are laminated. The common electrode 23 is made of a transparent conductive material such as ITO, and is formed in a flat solid shape so as to cover the plurality of pixels 200. The alignment film 25 is made of polyimide, for example, and is formed so as to cover the common electrode 23.

The color filter 22 of this embodiment includes a light shielding portion 224, a color material portion 222, and a planarizing layer 223. The light shielding part 224 is made of a material having a light shielding property, and is specifically made of an inorganic material such as Cr or Cu, or an organic material such as an acrylic resin colored in black. The light shielding portion 224 is provided in an area where the TFT 30, the scanning line 3a, the data line 6a, and the like are arranged, and this area is a non-display area B. The color material part 222 is for emitting light passing therethrough as desired color light, and in a liquid crystal device for full color display, for example, one corresponding to red, green, and blue for each pixel (sub-pixel). Are arranged periodically. The flattening layer 223 fills the level difference between the color material portion 222 and the light shielding portion 224 and flattens the liquid crystal layer 50 side of the color filter 22.
The thickness of the color material portion may be changed between the reflective display region R and the transmissive display region T, whereby the color can be made uniform between the reflective display region R and the transmissive display region T. .

4 is a partial cross-sectional configuration diagram taken along the line BB ′ of FIG. As shown in FIG. 4, the data line 6a of this embodiment includes a wiring layer 6a1 formed on the gate insulating film 12, and a metal film 6a2 formed by laminating the wiring layer 6a1 on the liquid crystal layer 50 side. It is formed by.
Here, the wiring layer 6a1 is formed of a material having a larger coefficient of thermal expansion than the metal film 6a2. In this embodiment, for example, the wiring layer 6a1 is formed of Al (aluminum) having a linear expansion coefficient of 23 × 10 ⁻⁶ / ° C., and the metal film 6a2 has a linear expansion coefficient of 8.4 × 10 ⁻⁶ / ° C. It is made of Ti (titanium). Further, the film thickness t of the metal film 6a2 is formed, for example, in the range of about 10 nm to 300 nm. More preferably, it is formed in the range of about 100 nm to 200 nm. In this embodiment, the thickness t of the metal film 6a2 is about 100 nm.

  FIG. 5A is a partially enlarged view of FIG. 4, and FIG. 5B is a plan view corresponding to FIG. As shown in FIGS. 5A and 5B, a plurality of protrusions 6c are formed on the surface of the wiring layer 6a1 on the metal film 6a2 side. The protruding portion 6c is formed so that the tip portion penetrates the metal film 6a2 and protrudes from the surface of the metal film 6a2. In this embodiment, the protrusion 6c protrudes from the surface of the metal film 6a2, and a plurality of protrusions are formed on the surface of the metal film 6a2, thereby light scattering means on the surface of the data line 6a on the liquid crystal layer 50 side. Is formed.

  The liquid crystal device 100 having the above-described configuration can transmit image signals individually to the pixel electrodes 9 of the plurality of pixels 200 by switching the image signal from the data line 6a with the TFT 30. When an image signal is transmitted to the pixel electrode 9, a predetermined electric field is applied between the pixel electrode 9 and the common electrode 23, and liquid crystal molecules between these electrodes are directed in a direction corresponding to the electric field. In the transmissive display region T, the light from the backlight 61 is modulated by the liquid crystal layer 50 according to the image signal while traveling from the first substrate 10 side to the second substrate 20 side. In the reflective display region R, the light from the second substrate 20 side is modulated according to the image signal by the liquid crystal layer 50 while being reflected toward the reflective layer 29 and while being reflected by the light toward the first substrate 10 side. Is done. The modulated light is filtered by the polarizing plate 24 or the like, so that gradation display is possible.

At this time, as shown in FIG. 4, a part of the light L emitted from the backlight 61 is reflected by the back surface of the reflective layer 29 (the surface opposite to the liquid crystal layer 50), and the data line 6a Incident on the inner surface side (liquid crystal layer 50 side).
Here, in this embodiment, as shown in FIGS. 5A and 5B, the surface of the data line 6a on the liquid crystal layer 50 side is projected from the surface of the metal film 6a2 to the protrusion of the wiring layer 6a1. The light scattering means is formed by projecting the tip of 6c and forming a plurality of convex portions on the surface of the metal film 6a2. Therefore, the light L incident on the inner surface side of the data line 6a is scattered by the plurality of convex portions of the light scattering means, reflected to the liquid crystal layer 50 side, and emitted from between the light shielding portion 224 and the reflective layer 29 to the viewer side. Less light is emitted.

  Further, the data line 6a is formed by the wiring layer 6a1 and the metal film 6a2, and the wiring layer 6a1 is formed by Al having a higher thermal expansion coefficient than Ti which is the material of the metal film 6a2. For this reason, stress migration is positively generated between the wiring layer 6a1 and the metal film 6a2, and the protrusion 6c of the wiring layer 6a1 protrudes from the surface of the metal film 6a2. The light scattering means can be easily formed by forming the convex portion.

Further, by forming the thickness t of the metal film 6a2 in the range of 10 nm or more and 300 nm or less, when stress migration occurs between the wiring layer 6a1 and the metal film 6a2, a plurality of protrusions are formed from the wiring layer 6a1. By projecting the portion 6c, a plurality of convex portions can be formed on the metal film 6a2.
Furthermore, in this embodiment, the thickness t of the metal film 6a2 is formed in a more preferable range of about 100 nm to 200 nm. As a result, when stress migration occurs between the wiring layer 6a1 and the metal film 6a2, the protrusion 6c is reliably projected from the surface of the metal film 6a2 to the wiring layer 6a1, and a plurality of protrusions are formed on the surface of the metal film 6a2. A convex part can be formed more reliably.

(Manufacturing method of liquid crystal device)
Next, a method for manufacturing the liquid crystal device 100 of this embodiment will be described. In the following description, the manufacturing process of the data line 6a will be mainly described, and description of other processes will be omitted. In addition, a well-known thing can be employ | adopted about processes other than the manufacturing process of the data line 6a.

First, the scanning lines 3a and the capacitance lines 3b are formed on the inner surface side of the transparent substrate 11 of the first substrate 10, and the gate insulating film 12 is formed so as to cover the scanning lines 3a and the capacitance lines 3b.
Next, as shown in FIG. 6A, the transparent substrate 11 is heated in a temperature range of about 200 ° C. to 400 ° C., for example, on the gate insulating film 12 by, for example, mask sputtering or the like. Wiring layer 6a1 is formed (heating step).

  Next, as shown in FIG. 6B, for example, on the wiring layer 6a1 in a state where the temperature of the transparent substrate 11 is maintained in a temperature range of about 200 ° C. to 400 ° C., for example, by a mask sputtering method or the like. A Ti metal film 6a2 having a smaller linear expansion coefficient than Al is formed (film formation step). At this time, the metal film 6a2 is formed so that the film thickness t is in the range of about 10 nm to 300 nm. In this embodiment, the film thickness t of the metal film 6a2 is formed to about 100 nm.

Next, the first substrate 10 is cooled to room temperature, and as shown in FIG. 6C, the wiring layer 6a1 and the metal film 6a2 thermally expanded in the heating process and the film forming process are contracted (cooling process). As a cooling method of the first substrate 10, a method of leaving the first substrate 10 at room temperature, a method of actively cooling the first substrate 10 with a cooling device, or the like can be used.
At this time, thermal stress is generated due to the difference in thermal expansion coefficient between the wiring layer 6a1 and the metal film 6a2, and Al atoms in the wiring layer 6a1 are microscopic such as holes and cracks in the metal film 6a2 in an attempt to relieve the stress. Stress migration that moves to a defective part occurs. Thereby, as shown in FIGS. 5A and 5B, a plurality of protrusions 6c are formed on the surface of the wiring layer 6a1 on the metal film 6a2 side, and the tips of the protrusions 6c are formed on the surface of the metal film 6a2. A part protrudes and a some convex part is formed.

  Here, in this embodiment, in the film forming process, the metal film 6a2 is formed in a state where the wiring layer 6a1 is heated, so that the heating process and the film forming process can be performed collectively. Therefore, the productivity of the liquid crystal device 100 can be improved.

  Further, in the heating process, the wiring layer 6a1 is heated in a temperature range of 200 ° C. or more and 400 ° C. or less, so that the wiring layer 6a1 and the metal film 6a2 are thermally expanded to a state where stress migration is likely to occur. The protrusion 6c can be reliably formed on the surface on the film 6a2 side. Thereby, a some convex part can be reliably formed in the surface at the side of the liquid crystal layer 50 of the metal film 6a2.

  Further, in the cooling step, the first substrate 10 is cooled to a temperature below room temperature, whereby the wiring layer 6a1 and the metal film 6a2 are cooled to a temperature below room temperature and contracted to a state where stress migration is likely to occur. The protrusion 6c can be reliably formed on the surface of the layer 6a1 on the metal film 6a2 side. Thereby, a some convex part can be reliably formed in the surface at the side of the liquid crystal layer 50 of the metal film 6a2.

Further, by forming the thickness t of the metal film 6a2 in the range of 10 nm or more and 300 nm or less, the protrusion 6c is formed in the wiring layer 6a1 when stress migration occurs between the wiring layer 6a1 and the metal film 6a2. A plurality of protrusions can be formed on the metal film 6a2.
Furthermore, in this embodiment, the thickness t of the metal film 6a2 is formed in a more preferable range of about 100 nm to 200 nm. As a result, when stress migration occurs between the wiring layer 6a1 and the metal film 6a2, the protrusion 6c is reliably projected from the surface of the metal film 6a2 to the wiring layer 6a1, and a plurality of protrusions are formed on the surface of the metal film 6a2. A convex part can be formed more reliably.

As described above, according to the method for manufacturing the liquid crystal device 100 of this embodiment, the light scattering means including the metal film 6a2 and the protrusion 6c can be formed on the surface of the wiring layer 6a1 on the liquid crystal layer 50 side. . That is, it is possible to manufacture the liquid crystal device 100 that can scatter the light L reflected by the back surface of the reflective layer 29 and incident on the liquid crystal layer 50 side of the data line 6a by the light scattering means.
Therefore, it is possible to reduce the reflected light that is reflected on the liquid crystal layer 50 side by the surface of the data line 6a on the liquid crystal layer 50 side and causes light leakage of the liquid crystal device 100. As a result, light leakage that occurs when the light L reflected by the back surface of the reflective layer 29 is reflected toward the liquid crystal layer 50 is reduced, and the contrast of the liquid crystal device 100 can be improved.

(Electronics)
Next, an electronic apparatus including the liquid crystal device 100 described in the above embodiment will be described.
As shown in FIG. 7, a mobile phone 90 which is an example of an embodiment of an electronic device includes a plurality of operation buttons 91 and a display unit including the liquid crystal device 100 described above. Thus, since the mobile phone 90 includes the liquid crystal device 100 described above, the mobile phone 90 is a mobile phone in which light leakage is prevented and the contrast of the display unit is improved. Therefore, by providing the liquid crystal device 100 described above, the contrast of the display unit of the mobile phone 90 is improved, and the mobile phone 90 with high display quality of the display unit can be provided.

The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, the combination of the material of the wiring layer and the metal film is not limited to the above-described embodiment, and it is sufficient that the thermal expansion coefficient of the wiring layer is larger than the thermal expansion coefficient of the metal film. For example, the wiring layer may be formed of Cu (copper), Ag (silver), or the like. When the wiring layer is made of Al (aluminum), one or more metal films may be selected from Mo (molybdenum), W (tungsten), Ta (tantalum), and Cr (chromium).
The data line may be formed of three or more layers. In this case, a wiring layer may be formed of a material having a thermal expansion coefficient larger than that of the metal film immediately below the metal film on the innermost surface side (liquid crystal layer side) (on the opposite side of the liquid crystal layer). For example, a three-layer structure of Ti / Al / Ti can be employed.
Further, in the above-described embodiment, the configuration in which the protruding portion penetrates the metal film has been described. However, the protruding portion may not penetrate the metal film as long as the protruding portion can be formed on the surface of the metal film. .

3 is an equivalent circuit diagram of a pixel of the liquid crystal device in the embodiment of the present invention. FIG. It is a plane block diagram which expands and shows the pixel in embodiment of this invention. FIG. 3 is a cross-sectional view taken along the line A-A ′ of FIG. 2. FIG. 3 is a cross-sectional view taken along line B-B ′ in FIG. 2. (A) is the elements on larger scale of FIG. 4, (b) is a top view corresponding to (a). (A)-(c) is a partial expanded sectional view explaining the manufacturing process of the liquid crystal device in embodiment of this invention. 1 is a perspective view of a mobile phone according to an embodiment of the present invention. It is sectional drawing corresponding to FIG. 4 in the conventional liquid crystal device.

Explanation of symbols

6a1 wiring layer, 6a2 metal film (light scattering means), 6c protrusion (light scattering means), 10 first substrate, 20 second substrate, 29 reflective layer, 50 liquid crystal layer, 61 backlight (illumination device), 90 mobile phone Telephone (electronic equipment), 100 liquid crystal device, t film thickness

Claims (10)

A liquid crystal layer is sandwiched between the first substrate and the second substrate, a wiring layer and a reflective layer are formed on the first substrate, and the reflective layer is disposed closer to the liquid crystal layer than the wiring layer, A liquid crystal device in which a lighting device is disposed on a side of the first substrate opposite to the liquid crystal layer,
A liquid crystal device, wherein light scattering means is formed on a surface of the wiring layer on the liquid crystal layer side.   The light scattering means includes a plurality of protrusions formed on the surface of the wiring layer on the liquid crystal layer side, and a plurality of protrusions formed by being stacked on the liquid crystal layer side of the wiring layer. The liquid crystal device according to claim 1, wherein the liquid crystal device is formed of a metal film.   The liquid crystal device according to claim 2, wherein a thermal expansion coefficient of the wiring layer is larger than a thermal expansion coefficient of the metal film.   4. The liquid crystal device according to claim 2, wherein a thickness of the metal film is in a range of 10 nm to 300 nm.   5. The liquid crystal device according to claim 2, wherein the wiring layer is made of aluminum, and the metal film is made of titanium. 6. A liquid crystal layer is sandwiched between the first substrate and the second substrate, a wiring layer and a reflective layer are formed on the first substrate, and the reflective layer is disposed closer to the liquid crystal layer than the wiring layer, A method of manufacturing a liquid crystal device in which an illumination device is disposed on the opposite side of the first substrate from the liquid crystal layer,
A heating step of heating and expanding the wiring layer;
A film forming step of forming a metal film having a smaller coefficient of thermal expansion than the wiring layer on the wiring layer;
The wiring layer and the metal film are cooled and contracted, and a plurality of protrusions are formed on the surface of the wiring layer on the liquid crystal layer side due to a difference in thermal expansion coefficient between the wiring layer and the metal film. A cooling step of forming a plurality of protrusions on the metal film by the protrusions;
A method for manufacturing a liquid crystal device, comprising:   7. The method of manufacturing a liquid crystal device according to claim 6, wherein in the film forming step, the metal film is formed in a state where the wiring layer is heated.   8. The method of manufacturing a liquid crystal device according to claim 6, wherein in the heating step, the wiring layer is heated in a temperature range of 200 ° C. or higher and 400 ° C. or lower.   9. The method for manufacturing a liquid crystal device according to claim 6, wherein in the cooling step, the wiring layer is cooled to a temperature of room temperature or lower.   An electronic apparatus comprising the liquid crystal device according to any one of claims 1 to 5.

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