JP2009143894A - Polynuclear complex - Google Patents
Polynuclear complex Download PDFInfo
- Publication number
- JP2009143894A JP2009143894A JP2008291959A JP2008291959A JP2009143894A JP 2009143894 A JP2009143894 A JP 2009143894A JP 2008291959 A JP2008291959 A JP 2008291959A JP 2008291959 A JP2008291959 A JP 2008291959A JP 2009143894 A JP2009143894 A JP 2009143894A
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- Prior art keywords
- group
- atom
- tetrayl
- ion
- tetrayl group
- Prior art date
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- Granted
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- 239000003446 ligand Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 125000004429 atom Chemical group 0.000 claims abstract description 18
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 7
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 6
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 6
- 125000004437 phosphorous atom Chemical group 0.000 claims abstract description 6
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 6
- 125000004434 sulfur atom Chemical group 0.000 claims abstract description 6
- 125000001183 hydrocarbyl group Chemical group 0.000 claims abstract 2
- 125000003118 aryl group Chemical group 0.000 claims description 14
- 150000002500 ions Chemical class 0.000 claims description 7
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000007848 Bronsted acid Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims 1
- 229910001431 copper ion Inorganic materials 0.000 claims 1
- 150000003378 silver Chemical group 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 30
- 150000004696 coordination complex Chemical class 0.000 abstract description 3
- 125000000962 organic group Chemical group 0.000 abstract description 3
- -1 monocyclic aromatic compound Chemical class 0.000 description 120
- 239000010410 layer Substances 0.000 description 59
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- JGFXUYLYPITYGR-UHFFFAOYSA-N 2-(2-diphenylphosphanylphenyl)-n,n-dimethylaniline Chemical group CN(C)C1=CC=CC=C1C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 JGFXUYLYPITYGR-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
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- 125000003342 alkenyl group Chemical group 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
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- 125000003277 amino group Chemical group 0.000 description 3
- ZDZHCHYQNPQSGG-UHFFFAOYSA-N binaphthyl group Chemical group C1(=CC=CC2=CC=CC=C12)C1=CC=CC2=CC=CC=C12 ZDZHCHYQNPQSGG-UHFFFAOYSA-N 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
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- 125000001309 chloro group Chemical group Cl* 0.000 description 3
- 125000000753 cycloalkyl group Chemical group 0.000 description 3
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- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
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- 229920003227 poly(N-vinyl carbazole) Chemical class 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 3
- 150000003222 pyridines Chemical class 0.000 description 3
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- 125000003396 thiol group Chemical group [H]S* 0.000 description 3
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- LWNGJAHMBMVCJR-UHFFFAOYSA-N (2,3,4,5,6-pentafluorophenoxy)boronic acid Chemical compound OB(O)OC1=C(F)C(F)=C(F)C(F)=C1F LWNGJAHMBMVCJR-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
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- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
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- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
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- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 2
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- UAXNXOMKCGKNCI-UHFFFAOYSA-N 1-diphenylphosphanylethyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C=1C=CC=CC=1)C(C)P(C=1C=CC=CC=1)C1=CC=CC=C1 UAXNXOMKCGKNCI-UHFFFAOYSA-N 0.000 description 1
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- DRGAZIDRYFYHIJ-UHFFFAOYSA-N 2,2':6',2''-terpyridine Chemical compound N1=CC=CC=C1C1=CC=CC(C=2N=CC=CC=2)=N1 DRGAZIDRYFYHIJ-UHFFFAOYSA-N 0.000 description 1
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- 239000010453 quartz Substances 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical class C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- WMXCDAVJEZZYLT-UHFFFAOYSA-N tert-butylthiol Chemical compound CC(C)(C)S WMXCDAVJEZZYLT-UHFFFAOYSA-N 0.000 description 1
- RAOIDOHSFRTOEL-UHFFFAOYSA-N tetrahydrothiophene Chemical compound C1CCSC1 RAOIDOHSFRTOEL-UHFFFAOYSA-N 0.000 description 1
- GVIJJXMXTUZIOD-UHFFFAOYSA-N thianthrene Chemical compound C1=CC=C2SC3=CC=CC=C3SC2=C1 GVIJJXMXTUZIOD-UHFFFAOYSA-N 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 150000007944 thiolates Chemical class 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
- GEPJPYNDFSOARB-UHFFFAOYSA-N tris(4-fluorophenyl)phosphane Chemical compound C1=CC(F)=CC=C1P(C=1C=CC(F)=CC=1)C1=CC=C(F)C=C1 GEPJPYNDFSOARB-UHFFFAOYSA-N 0.000 description 1
- UYUUAUOYLFIRJG-UHFFFAOYSA-N tris(4-methoxyphenyl)phosphane Chemical compound C1=CC(OC)=CC=C1P(C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 UYUUAUOYLFIRJG-UHFFFAOYSA-N 0.000 description 1
- WXAZIUYTQHYBFW-UHFFFAOYSA-N tris(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 WXAZIUYTQHYBFW-UHFFFAOYSA-N 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic System
- C07F9/02—Phosphorus compounds
- C07F9/28—Phosphorus compounds with one or more P—C bonds
- C07F9/50—Organo-phosphines
- C07F9/5027—Polyphosphines
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic System
- C07F9/02—Phosphorus compounds
- C07F9/28—Phosphorus compounds with one or more P—C bonds
- C07F9/50—Organo-phosphines
- C07F9/5045—Complexes or chelates of phosphines with metallic compounds or metals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/361—Polynuclear complexes, i.e. complexes comprising two or more metal centers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/371—Metal complexes comprising a group IB metal element, e.g. comprising copper, gold or silver
Abstract
Description
本発明は、多核錯体に関する。 The present invention relates to a polynuclear complex.
有機EL素子等に用いる発光材料として、蛍光材料に比べ、発光効率が優れると考えられる燐光材料が注目され、中でも、イリジウム錯体が有望視されている。しかし、この錯体は、希少金属であるイリジウムを用いるため、価格、資源量等の面からその利用に限度がある。そのため、安価な金属の錯体につき、種々検討されている(非特許文献1参照)。 As a light-emitting material used for an organic EL element or the like, a phosphorescent material considered to have higher light emission efficiency than a fluorescent material has attracted attention, and among them, an iridium complex is considered promising. However, since this complex uses iridium, which is a rare metal, its use is limited in terms of price, amount of resources, and the like. For this reason, various studies have been made on inexpensive metal complexes (see Non-Patent Document 1).
しかし、公知の安価な金属の錯体は、その性能が必ずしも十分ではなく、発光材料として必ずしも有用ではなかった。
そこで、本発明は、発光材料として有用な、安価な金属の錯体を提供する。
However, known inexpensive metal complexes do not always have sufficient performance and are not necessarily useful as light emitting materials.
Therefore, the present invention provides an inexpensive metal complex useful as a light-emitting material.
即ち、本発明は、下式(I)で表される多核錯体を提供する。
(式(I)中、Mは11族の金属原子又は金属イオンを表し、aは2以上の数を表す。複数個のMはそれぞれ同一であっても異なっていてもよい。Arは芳香環を含む4価の有機基を表し、bは1以上の数を表す。Arが複数存在する場合、それぞれ同一であっても異なっていてもよい。Rは置換されてもよい炭化水素基を表す。複数のRは、それぞれ同一であっても異なっていてもよい。Qは窒素原子、リン原子、酸素原子及び硫黄原子からなる群から選ばれる配位原子を持つ配位子を表し、cは0以上の数である。Qが複数存在する場合、それらは、同一であっても異なっていてもよい。Xはカウンターイオンを表し、dは0以上の数である。Xが複数存在する場合、それぞれ同一であっても異なっていてもよい。)
That is, the present invention provides a polynuclear complex represented by the following formula (I).
(In formula (I), M represents a group 11 metal atom or metal ion, a represents a number of 2 or more, and a plurality of M may be the same or different. Ar represents an aromatic ring. And b represents a number of 1 or more, and when a plurality of Ars are present, they may be the same or different, and R represents a hydrocarbon group that may be substituted. A plurality of R may be the same or different, Q represents a ligand having a coordination atom selected from the group consisting of a nitrogen atom, a phosphorus atom, an oxygen atom and a sulfur atom, and c is It is a number greater than or equal to 0. When there are a plurality of Qs, they may be the same or different, X represents a counter ion, and d is a number greater than or equal to 0. When there are a plurality of Xs Each may be the same or different.)
本発明の多核錯体は、安価な金属の錯体であり、発光材料として有用である。 The polynuclear complex of the present invention is an inexpensive metal complex and is useful as a light emitting material.
上記式(I)中、Mは11族の金属原子又は金属イオンを表し、複数のMはそれぞれ同一であっても異なっていてもよい。金属原子又は金属イオンの金属として、好ましくは銅、銀であり、より好ましくは銅である。 In the above formula (I), M represents a Group 11 metal atom or metal ion, and a plurality of M may be the same or different. The metal atom or metal ion is preferably copper or silver, and more preferably copper.
該金属原子、金属イオンは、その価数の観点では、自然界に通常存在するものを適宜選択して使用することができる。例えば、銅の場合では1若しくは2価の銅又はその両方が混在した混合原子価のものを使用することができる。中でも、金属イオンが銅(I)イオンであることが好ましい。 From the viewpoint of the valence, the metal atom and metal ion can be appropriately selected from those normally present in nature. For example, in the case of copper, one having a mixed valence in which monovalent or divalent copper or both are mixed can be used. Especially, it is preferable that a metal ion is a copper (I) ion.
aは2以上の数を表し、式(I)で表される多核錯体が混合物の場合は平均値として表される。aは、好ましくは2〜100の数であり、より好ましくは2〜20の数であり、さらに好ましくは2〜10の数であり、特に好ましくは2〜6の数である。 a represents a number of 2 or more, and is represented as an average value when the polynuclear complex represented by the formula (I) is a mixture. a is preferably a number of 2 to 100, more preferably a number of 2 to 20, still more preferably a number of 2 to 10, and particularly preferably a number of 2 to 6.
上記式(I)中、Arは芳香環を含む4価の有機基を表し、Arが複数存在する場合は、それぞれ同一であっても異なっていてもよい。芳香環を含む4価の有機基とは、芳香環を含む化合物から水素原子を4つとってなる基である。 In the above formula (I), Ar represents a tetravalent organic group containing an aromatic ring, and when a plurality of Ar are present, they may be the same or different. The tetravalent organic group containing an aromatic ring is a group having four hydrogen atoms from a compound containing an aromatic ring.
ここに、芳香環を含む化合物としては、単環芳香族化合物及び縮環芳香族化合物から選ばれる2個以上が直接結合又は2価の基を介して結合してなる化合物、単環芳香族化合物、縮環芳香族化合物等が挙げられる。ここに2価の基としては、炭素原子、酸素原子、硫黄原子、窒素原子及びリン原子から選ばれる2個以上の原子を含む2価の基、置換基を有していてもよい炭素原子、酸素原子、硫黄原子、置換基を有していてもよい窒素原子、置換基を有していてもよいリン原子等が挙げられる。 Here, as a compound containing an aromatic ring, a compound in which two or more selected from a monocyclic aromatic compound and a condensed aromatic compound are bonded directly or via a divalent group, a monocyclic aromatic compound , Condensed ring aromatic compounds and the like. Here, as the divalent group, a divalent group containing two or more atoms selected from a carbon atom, an oxygen atom, a sulfur atom, a nitrogen atom and a phosphorus atom, a carbon atom which may have a substituent, Examples thereof include an oxygen atom, a sulfur atom, a nitrogen atom which may have a substituent, and a phosphorus atom which may have a substituent.
芳香環を含む化合物の具体例としては、ベンゼン、ナフタレン、エタノアントラセン、アントラセン、ジヒドロアントラセン、アントラキノン、ビフェニレン、ピレン、ペリレン、ビフェニル、ジフェニルエーテル、ジフェニルスルフィド、ジフェニルジスルフィド、ジフェニルアセチレン、スチルベン、ジフェニルアミン、ジフェニルホスフィン、ベンゾフェノン、p−ターフェニル、ビナフチル、フェナジン、チアントレン、ビピリジン、ビチオフェン、ビピロール等が挙げられる。 Specific examples of the compound containing an aromatic ring include benzene, naphthalene, ethanoanthracene, anthracene, dihydroanthracene, anthraquinone, biphenylene, pyrene, perylene, biphenyl, diphenyl ether, diphenyl sulfide, diphenyl disulfide, diphenylacetylene, stilbene, diphenylamine, diphenylphosphine. Benzophenone, p-terphenyl, binaphthyl, phenazine, thianthrene, bipyridine, bithiophene, bipyrrole and the like.
Arとして、具体的には、ベンゼン−1,2,4,5−テトライル基、ベンゼン−1,2,3,4−テトライル基、ナフタレン−1,2,5,6−テトライル基、ナフタレン−2,3,6,7−テトライル基、ナフタレン−1,2,7,8−テトライル基、ナフタレン−1,4,5,8−テトライル基、アントラセン−1,2,5,6−テトライル基、アントラセン−2,3,6,7−テトライル基、アントラセン−2,3,5,6−テトライル基、アントラセン−1,5,9,10−テトライル基、アントラセン−1,4,5,10−テトライル基、9,10−ジヒドロアントラセン−1,2,5,6−テトライル基、9,10−ジヒドロアントラセン−2,3,6,7−テトライル基、9,10−ジヒドロアントラセン−2,3,5,6−テトライル基、エタノアントラセン−1,2,5,6−テトライル基、エタノアントラセン−2,3,6,7−テトライル基、エタノアントラセン−2,3,5,6−テトライル基、アントラキノン−1,2,5,6−テトライル基、アントラキノン−2,3,6,7−テトライル基、アントラキノン−2,3,5,6−テトライル基、ビフェニレン−1,2,5,6−テトライル基、ビフェニレン−2,3,6,7−テトライル基、ビフェニレン−1,2,7,8−テトライル基、ビフェニレン−1,4,5,8−テトライル基、ピレン−1,2,6,7−テトライル基、ピレン−4,5,9,10−テトライル基、ピレン−1,5,6,10−テトライル基、ピレン−1,2,7,8−テトライル基、ピレン−1,8,9,10−テトライル基、ピレン−1,3,4,10−テトライル基、ペリレン−1,2,7,8−テトライル基、ペリレン−2,3,8,9−テトライル基、ペリレン−3,4,9,10−テトライル基、ペリレン−1,2,5,6−テトライル基、ペリレン−2,3,4,5−テトライル基、ビフェニル−2,2',3,3'−テトライル基、ビフェニル−3,3',4,4'−テトライル基、ジフェニルエーテル−2,2',3,3'−テトライル基、ジフェニルエーテル−3,3',4,4'−テトライル基、ジフェニルスルフィド−2,2',3,3'−テトライル基、ジフェニルスルフィド−3,3',4,4'−テトライル基、ジフェニルジスルフィド−2,2',3,3'−テトライル基、ジフェニルジスルフィド−3,3',4,4'−テトライル基、ジフェニルアセチレン−2,2',3,3'−テトライル基、ジフェニルアセチレン−3,3',4,4'−テトライル基、スチルベン−2,2',3,3'−テトライル基、スチルベン−3,3',4,4'−テトライル基、ジフェニルアミン−2,2',3,3'−テトライル基、ジフェニルアミン−3,3',4,4'−テトライル基、ジフェニルホスフィン−2,2',3,3'−テトライル基、ジフェニルホスフィン−3,3',4,4'−テトライル基、ベンゾフェノン−2,2',3,3'−テトライル基、ベンゾフェノン−3,3',4,4'−テトライル基、p−ターフェニル−2,2' ',3,3' '−テトライル基、p−ターフェニル−3,3' ',4,4' '−テトライル基、ビナフチル−2,2',3,3'−テトライル基、ビナフチル−3,3',4,4'−テトライル基、ビナフチル−4,4',5,5'−テトライル基、ビナフチル−5,5',6,6'−テトライル基、ビナフチル−6,6',7,7'−テトライル基、ビナフチル−7,7',8,8'−テトライル基、フェナジン−1,2,5,6−テトライル基、フェナジン−2,3,6,7−テトライル基、フェナジン−2,3,5,6−テトライル基、フェナジン−1,5,9,10−テトライル基、フェナジン−1,4,5,10−テトライル基、チアントレン−1,2,5,6−テトライル基、チアントレン−2,3,6,7−テトライル基、チアントレン−2,3,5,6−テトライル基、チアントレン−1,5,9,10−テトライル基、チアントレン−1,4,5,10−テトライル基、2,2'−ビピリジン−3,3',4,4'−テトライル基、2,2'−ビピリジン−4,4',5,5'−テトライル基、2,2'−ビピリジン−5,5',6,6'−テトライル基、3,3'−ビピリジン−4,4',5,5'−テトライル基、3,3'−ビピリジン−5,5',6,6'−テトライル基、4,4'−ビピリジン−2,2',3,3'−テトライル基、2,2'−ビチオフェン−3,3',4,4'−テトライル基、2,2'−ビチオフェン−4,4',5,5'−テトライル基、3,3'−ビチオフェン−4,4',5,5'−テトライル基、2,2'−ビピロール−3,3',4,4'−テトライル基、2,2'−ビピロール−4,4',5,5'−テトライル基、3,3'−ビピロール−4,4',5,5'−テトライル基等が挙げられる。 Specific examples of Ar include benzene-1,2,4,5-tetrayl group, benzene-1,2,3,4-tetrayl group, naphthalene-1,2,5,6-tetrayl group, naphthalene-2 , 3,6,7-tetrayl group, naphthalene-1,2,7,8-tetrayl group, naphthalene-1,4,5,8-tetrayl group, anthracene-1,2,5,6-tetrayl group, anthracene -2,3,6,7-tetrayl group, anthracene-2,3,5,6-tetrayl group, anthracene-1,5,9,10-tetrayl group, anthracene-1,4,5,10-tetrayl group 9,10-dihydroanthracene-1,2,5,6-tetrayl group, 9,10-dihydroanthracene-2,3,6,7-tetrayl group, 9,10-dihydroanthracene-2,3,5, 6 Tetrayl group, ethanoanthracene-1,2,5,6-tetrayl group, ethanoanthracene-2,3,6,7-tetrayl group, ethanoanthracene-2,3,5,6-tetrayl group, anthraquinone-1,2 , 5,6-tetrayl group, anthraquinone-2,3,6,7-tetrayl group, anthraquinone-2,3,5,6-tetrayl group, biphenylene-1,2,5,6-tetrayl group, biphenylene-2 , 3,6,7-tetrayl group, biphenylene-1,2,7,8-tetrayl group, biphenylene-1,4,5,8-tetrayl group, pyrene-1,2,6,7-tetrayl group, pyrene -4,5,9,10-tetrayl group, pyrene-1,5,6,10-tetrayl group, pyrene-1,2,7,8-tetrayl group, pyrene-1,8,9,10-teto Yl group, pyrene-1,3,4,10-tetrayl group, perylene-1,2,7,8-tetrayl group, perylene-2,3,8,9-tetrayl group, perylene-3,4,9, 10-tetrayl group, perylene-1,2,5,6-tetrayl group, perylene-2,3,4,5-tetrayl group, biphenyl-2,2 ′, 3,3′-tetrayl group, biphenyl-3, 3 ′, 4,4′-tetrayl group, diphenyl ether-2,2 ′, 3,3′-tetrayl group, diphenyl ether-3,3 ′, 4,4′-tetrayl group, diphenyl sulfide-2,2 ′, 3 , 3′-tetrayl group, diphenyl sulfide-3,3 ′, 4,4′-tetrayl group, diphenyl disulfide-2,2 ′, 3,3′-tetrayl group, diphenyl disulfide-3,3 ′, 4,4 '-Tetrayl group, dipheny Acetylene-2,2 ′, 3,3′-tetrayl group, diphenylacetylene-3,3 ′, 4,4′-tetrayl group, stilbene-2,2 ′, 3,3′-tetrayl group, stilbene-3, 3 ′, 4,4′-tetrayl group, diphenylamine-2,2 ′, 3,3′-tetrayl group, diphenylamine-3,3 ′, 4,4′-tetrayl group, diphenylphosphine-2,2 ′, 3 , 3′-tetrayl group, diphenylphosphine-3,3 ′, 4,4′-tetrayl group, benzophenone-2,2 ′, 3,3′-tetrayl group, benzophenone-3,3 ′, 4,4′- Tetrayl group, p-terphenyl-2,2 ′ ′, 3,3 ′ ′-tetrayl group, p-terphenyl-3,3 ′ ′, 4,4 ′ ′-tetrayl group, binaphthyl-2,2 ′, 3,3′-tetrayl group, binaphthyl-3,3 ′, 4,4′-tetra Yl group, binaphthyl-4,4 ′, 5,5′-tetrayl group, binaphthyl-5,5 ′, 6,6′-tetrayl group, binaphthyl-6,6 ′, 7,7′-tetrayl group, binaphthyl- 7,7 ′, 8,8′-tetrayl group, phenazine-1,2,5,6-tetrayl group, phenazine-2,3,6,7-tetrayl group, phenazine-2,3,5,6-tetrayl Group, phenazine-1,5,9,10-tetrayl group, phenazine-1,4,5,10-tetrayl group, thianthrene-1,2,5,6-tetrayl group, thianthrene-2,3,6,7 -Tetrayl group, thianthrene-2,3,5,6-tetrayl group, thianthrene-1,5,9,10-tetrayl group, thianthrene-1,4,5,10-tetrayl group, 2,2'-bipyridine- 3,3 ', 4,4'-tetry Group, 2,2′-bipyridine-4,4 ′, 5,5′-tetrayl group, 2,2′-bipyridine-5,5 ′, 6,6′-tetrayl group, 3,3′-bipyridine-4 , 4 ′, 5,5′-tetrayl group, 3,3′-bipyridine-5,5 ′, 6,6′-tetrayl group, 4,4′-bipyridine-2,2 ′, 3,3′-tetrayl Group, 2,2′-bithiophene-3,3 ′, 4,4′-tetrayl group, 2,2′-bithiophene-4,4 ′, 5,5′-tetrayl group, 3,3′-bithiophene-4 , 4 ′, 5,5′-tetrayl group, 2,2′-bipyrrole-3,3 ′, 4,4′-tetrayl group, 2,2′-bipyrrole-4,4 ′, 5,5′-tetrayl Group, 3,3′-bipyrrole-4,4 ′, 5,5′-tetrayl group and the like.
これらの中でも、合成の容易さ又は発光性能の観点からは、好ましくは、ベンゼン−1,2,4,5−テトライル基、ベンゼン−1,2,3,4−テトライル基、ナフタレン−1,2,5,6−テトライル基、ナフタレン−2,3,6,7−テトライル基、ナフタレン−1,2,7,8−テトライル基、ナフタレン−1,4,5,8−テトライル基、ビフェニル−2,2',3,3'−テトライル基、ビフェニル−3,3',4,4'−テトライル基、ジフェニルエーテル−2,2',3,3'−テトライル基、ジフェニルエーテル−3,3',4,4'−テトライル基、ジフェニルスルフィド−2,2',3,3'−テトライル基、ジフェニルスルフィド−3,3',4,4'−テトライル基、ジフェニルアミン−2,2',3,3'−テトライル基、ジフェニルアミン−3,3',4,4'−テトライル基、ジフェニルホスフィン−2,2',3,3'−テトライル基、ジフェニルホスフィン−3,3',4,4'−テトライル基、ベンゾフェノン−2,2',3,3'−テトライル基、ベンゾフェノン−3,3',4,4'−テトライル基、2,2'−ビピリジン−3,3',4,4'−テトライル基、2,2'−ビピリジン−4,4',5,5'−テトライル基、2,2'−ビピリジン−5,5',6,6'−テトライル基、3,3'−ビピリジン−4,4',5,5'−テトライル基、3,3'−ビピリジン−5,5',6,6'−テトライル基、4,4'−ビピリジン−2,2',3,3'−テトライル基、2,2'−ビチオフェン−3,3',4,4'−テトライル基、2,2'−ビチオフェン−4,4',5,5'−テトライル基、3,3'−ビチオフェン−4,4',5,5'−テトライル基、2,2'−ビピロール−3,3',4,4'−テトライル基、2,2'−ビピロール−4,4',5,5'−テトライル基、3,3'−ビピロール−4,4',5,5'−テトライル基であり、さらに好ましくは、ベンゼン−1,2,4,5−テトライル基、ベンゼン−1,2,3,4−テトライル基、ナフタレン−1,2,5,6−テトライル基、ナフタレン−2,3,6,7−テトライル基、ナフタレン−1,2,7,8−テトライル基、ナフタレン−1,4,5,8−テトライル基、ビフェニル−2,2',3,3'−テトライル基、ビフェニル−3,3',4,4'−テトライル基であり、特に好ましくは、ベンゼン−1,2,4,5−テトライル基、ナフタレン−1,2,5,6−テトライル基、ナフタレン−2,3,6,7−テトライル基、ナフタレン−1,4,5,8−テトライル基、ビフェニル−2,2',3,3'−テトライル基、ビフェニル−3,3',4,4'−テトライル基等が挙げられる。 Among these, from the viewpoint of ease of synthesis or luminous performance, benzene-1,2,4,5-tetrayl group, benzene-1,2,3,4-tetrayl group, naphthalene-1,2 are preferable. , 5,6-tetrayl group, naphthalene-2,3,6,7-tetrayl group, naphthalene-1,2,7,8-tetrayl group, naphthalene-1,4,5,8-tetrayl group, biphenyl-2 , 2 ′, 3,3′-tetrayl group, biphenyl-3,3 ′, 4,4′-tetrayl group, diphenyl ether-2,2 ′, 3,3′-tetrayl group, diphenyl ether-3,3 ′, 4 , 4′-tetrayl group, diphenyl sulfide-2,2 ′, 3,3′-tetrayl group, diphenyl sulfide-3,3 ′, 4,4′-tetrayl group, diphenylamine-2,2 ′, 3,3 ′ -Tetrayl group, diphe Luamine-3,3 ′, 4,4′-tetrayl group, diphenylphosphine-2,2 ′, 3,3′-tetrayl group, diphenylphosphine-3,3 ′, 4,4′-tetrayl group, benzophenone-2 , 2 ′, 3,3′-tetrayl group, benzophenone-3,3 ′, 4,4′-tetrayl group, 2,2′-bipyridine-3,3 ′, 4,4′-tetrayl group, 2,2 '-Bipyridine-4,4', 5,5'-tetrayl group, 2,2'-bipyridine-5,5 ', 6,6'-tetrayl group, 3,3'-bipyridine-4,4', 5 , 5′-tetrayl group, 3,3′-bipyridine-5,5 ′, 6,6′-tetrayl group, 4,4′-bipyridine-2,2 ′, 3,3′-tetrayl group, 2,2 '-Bithiophene-3,3', 4,4'-tetrayl group, 2,2'-bithiophene-4,4 ', 5,5'-tetrayl group, 3 3′-bithiophene-4,4 ′, 5,5′-tetrayl group, 2,2′-bipyrrole-3,3 ′, 4,4′-tetrayl group, 2,2′-bipyrrole-4,4 ′, 5,5′-tetrayl group, 3,3′-bipyrrole-4,4 ′, 5,5′-tetrayl group, more preferably benzene-1,2,4,5-tetrayl group, benzene-1 , 2,3,4-tetrayl group, naphthalene-1,2,5,6-tetrayl group, naphthalene-2,3,6,7-tetrayl group, naphthalene-1,2,7,8-tetrayl group, naphthalene -1,4,5,8-tetrayl group, biphenyl-2,2 ′, 3,3′-tetrayl group, biphenyl-3,3 ′, 4,4′-tetrayl group, particularly preferably benzene- 1,2,4,5-tetrayl group, naphthalene-1,2,5,6-tetrayl , Naphthalene-2,3,6,7-tetrayl group, naphthalene-1,4,5,8-tetrayl group, biphenyl-2,2 ′, 3,3′-tetrayl group, biphenyl-3,3 ′, 4 , 4′-tetrayl group and the like.
Arは置換基を有していてもよく、該置換基としては、ハロゲン原子、水酸基、炭化水素オキシ基、メルカプト基、炭化水素メルカプト基、アミノ基、炭化水素アミノ基、ニトロ基、シアノ基、アルキル基、アルケニル基、シクロアルキル基、シクロアルケニル基、アリール基、アラルキル基等が挙げられる。アルキル基、アルケニル基、シクロアルキル基、アリール基、アラルキル基で置換する場合、それらの具体例及び好ましい例は、以下に示されるRのそれらと同じである。 Ar may have a substituent, such as a halogen atom, a hydroxyl group, a hydrocarbon oxy group, a mercapto group, a hydrocarbon mercapto group, an amino group, a hydrocarbon amino group, a nitro group, a cyano group, Examples thereof include an alkyl group, an alkenyl group, a cycloalkyl group, a cycloalkenyl group, an aryl group, an aralkyl group, and the like. In the case of substitution with an alkyl group, alkenyl group, cycloalkyl group, aryl group or aralkyl group, specific examples and preferred examples thereof are the same as those for R shown below.
上記式(I)中、Rは置換されてもよい炭化水素基を表し、複数のRがそれぞれ同一であっても異なっていてもよい。 In the above formula (I), R represents a hydrocarbon group which may be substituted, and a plurality of R may be the same or different.
炭化水素基は、炭素数が通常1〜20程度であり、その例としては、メチル基、エチル基、1−プロピル基、2−プロピル基、1−ブチル基、2−ブチル基、2−メチル−1−プロピル基、2−メチル−2−プロピル基、ペンチル基、ヘキシル基、デシル基、エイコシル基等のアルキル基;エテニル基、プロペニル基、ブテニル基等のアルケニル基;エチニル基、プロピニル基、ブチニル基等のアルキニル基;シクロプロピル基、シクロブチル基、シクロペンチル基、シクロヘキシル基、ノルボルニル基、アダマンチル基等のシクロアルキル基;シクロプロペニル基、シクロペンテニル基、シクロヘキセニル基等のシクロアルケニル基;フェニル基、2−トリル基、3−トリル基、4−トリル基、キシリル基、メシチル基、ビフェニル基、ナフチル基、インデニル基、フルオレニル基等のアリール基;ベンジル基、キシリル基等のアラルキル基が挙げられ、好ましくはアルキル基、アリール基、アラルキル基であり、より好ましくはアリール基、アラルキル基であり、さらに好ましくはアリール基である。 The hydrocarbon group usually has about 1 to 20 carbon atoms. Examples thereof include methyl group, ethyl group, 1-propyl group, 2-propyl group, 1-butyl group, 2-butyl group, 2-methyl group. Alkyl groups such as -1-propyl group, 2-methyl-2-propyl group, pentyl group, hexyl group, decyl group, and eicosyl group; alkenyl groups such as ethenyl group, propenyl group, butenyl group; ethynyl group, propynyl group, Alkynyl groups such as butynyl group; cycloalkyl groups such as cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, norbornyl group, adamantyl group; cycloalkenyl groups such as cyclopropenyl group, cyclopentenyl group, cyclohexenyl group; phenyl group 2-tolyl group, 3-tolyl group, 4-tolyl group, xylyl group, mesityl group, biphenyl group, Aryl groups such as til group, indenyl group and fluorenyl group; aralkyl groups such as benzyl group and xylyl group are mentioned, preferably alkyl group, aryl group and aralkyl group, more preferably aryl group and aralkyl group, More preferably, it is an aryl group.
該炭化水素基が置換基を有する場合、該置換基としては、ハロゲン原子、水酸基、炭化水素オキシ基、メルカプト基、炭化水素メルカプト基、アミノ基、炭化水素アミノ基、ニトロ基、シアノ基等が挙げられる。 When the hydrocarbon group has a substituent, examples of the substituent include a halogen atom, a hydroxyl group, a hydrocarbon oxy group, a mercapto group, a hydrocarbon mercapto group, an amino group, a hydrocarbon amino group, a nitro group, and a cyano group. Can be mentioned.
炭化水素オキシ基、炭化水素メルカプト基、炭化水素アミノ基とは、水酸基、メルカプト基、アミノ基の水素原子を炭化水素基で置換したものであり、その場合の炭化水素基の具体例及び好ましい例は、Rのそれらと同じである。 The hydrocarbon oxy group, hydrocarbon mercapto group, and hydrocarbon amino group are hydroxyl groups, mercapto groups, and amino groups in which hydrogen atoms are substituted with hydrocarbon groups. Specific examples and preferred examples of hydrocarbon groups in that case Are the same as those of R.
ハロゲン原子としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子が挙げられ、好ましくはフッ素原子、塩素原子であり、より好ましくはフッ素原子である。 As a halogen atom, a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom are mentioned, Preferably they are a fluorine atom and a chlorine atom, More preferably, it is a fluorine atom.
前記式(I)において、Ar(PR2)4で示される構造としては、例えば、以下に例示する構造が挙げられる。
In the formula (I), examples of the structure represented by Ar (PR 2 ) 4 include the structures exemplified below.
前記式(I)中、bは1以上の数を表し、式(I)で表される多核錯体が混合物の場合は平均値として表される。bは、好ましくは1〜100の数であり、より好ましくは1〜20の数であり、さらに好ましくは1〜9の数であり、特に好ましくは1〜5の数である。 In the formula (I), b represents a number of 1 or more, and when the polynuclear complex represented by the formula (I) is a mixture, it is represented as an average value. b is preferably a number of 1 to 100, more preferably a number of 1 to 20, still more preferably a number of 1 to 9, and particularly preferably a number of 1 to 5.
aとbの比としては、錯体の安定性の観点から、a/bの上限は、3が好ましく、2.5がより好ましく、2がさらに好ましい。また、a/bの下限は、0.3が好ましく、0.5がより好ましく、1がさらに好ましい。 As for the ratio of a and b, from the viewpoint of the stability of the complex, the upper limit of a / b is preferably 3, more preferably 2.5, and even more preferably 2. Further, the lower limit of a / b is preferably 0.3, more preferably 0.5, and even more preferably 1.
さらに、aとbの関係につき、錯体の安定性の観点から、a−2≦b≦a+1であることが好ましく、a−1≦b≦aであることがより好ましいが、特にa−1=bであることがさらに好ましい。 Further, regarding the relationship between a and b, from the viewpoint of the stability of the complex, a-2 ≦ b ≦ a + 1 is preferable, and a-1 ≦ b ≦ a is more preferable. More preferably, it is b.
前記式(I)中、Qは窒素原子、リン原子、酸素原子及び硫黄原子からなる群から選ばれる配位原子を持つ配位子を表し、Qが複数存在する場合は、それぞれ同一であっても異なっていてもよい。QはMの空いた配位座に配位する。また、該配位子は、単座配位子、多座配位子のいずれであってもよい。該配位子が、多座配位子の場合、複数の配位原子は同じであっても、異なっていてもよい。該配位子の中では、好ましくは、窒素、酸素及びリンから選ばれる配位原子を持つ配位子であり、さらに好ましくは窒素及びリンから選ばれる配位原子を持つ配位子である。 In the formula (I), Q represents a ligand having a coordination atom selected from the group consisting of a nitrogen atom, a phosphorus atom, an oxygen atom, and a sulfur atom. May be different. Q coordinates to M's vacant coordination position. The ligand may be either a monodentate ligand or a polydentate ligand. When the ligand is a polydentate ligand, the plurality of coordination atoms may be the same or different. Among the ligands, a ligand having a coordination atom selected from nitrogen, oxygen and phosphorus is preferable, and a ligand having a coordination atom selected from nitrogen and phosphorus is more preferable.
ここに、単座配位子としては、トリフェニルホスフィン、トリ(p−トリル)ホスフィン、トリ(p−メトキシフェニル)ホスフィン、トリ(p−フルオロフェニル)ホスフィン等のホスフィン類;ピリジン、ピコリン、p−t−ブチルピリジン、キノリン等のピリジン類;ピロール、ピラゾール、イミダゾール等の含窒素複素環化合物;トリエチルアミン、トリプロピルアミン、トリブチルアミン、ジエチルアミン、ジプロピルアミン、ジブチルアミン、ジシクロヘキシルアミン、ピペリジン、ピペラジン、アニリン、N−メチルアニリン、N,N−ジメチルアニリン、ジフェニルアミン等のアミン類;ジエチルエーテル、テトラヒドロフラン、テトラヒドロピラン、ジイソプロピルエーテル、ジブチルエーテル、シクロペンチルメチルエーテル等のエーテル類;硫化ジメチル、硫化ジエチル、テトラヒドロチオフェン等のスルフィド類;メタンチオラート、エタンチオラート、2−プロパンチオラート、2−メチル−2−プロパンチオラート、ベンゼンチオラート等のチオラート類、及びこれらに置換基をつけたものが挙げられる。なお、置換基としては、Arにおけるそれと、具体例及び好ましい例は同じである。
また、多座配位子としては、ビス(ジフェニルホスフィノ)メタン、ビス(ジフェニルホスフィノ)エタン、ビス(ジフェニルホスフィノ)プロパン、ビス(ジフェニルホスフィノ)ベンゼン、ビス(ジフェニルホスフィノ)ナフタレン、ビス(ジフェニルホスフィノ)ビフェニル、ビス(ジフェニルホスフィノ)ビナフチル等のジホスフィン類;ビピリジン、フェナントロリン、ネオクプロイン、バソフェナントロリン、バソクプロイン等のジイミン類;アセテート、プロピオネート、ピバロネート、ベンゾエート等のカルボキレート類;アセチルアセトネート、1,3−ジフェニル−1,3−プロパンジオネート、1,1,1,3,3,3−ヘキサフルオロアセチルアセトネート等のβ−ジケトナト類;エタンジチオラート、プロパンジチオラート、ベンゼンジチオラート等のジチオラート類;ジフェニルホスフィノ−2−ピリジン、2−ジフェニルホスフィノ−2−ジメチルアミノ−1,1−ビフェニル、2−アミノエチル−ジフェニルホスフィン等の異なる配位原子を持つ二座配位子;2,6−ビス(2−ピリジル)ピリジン、ジエチレントリアミン、1,4,7−トリアザシクロノナン等の三座配位子;トリエチレンテトラミン、1,4,7,10−テトラアザシクロドデカン、1,4,8,11−テトラアザシクロテトラデカン等の四座配位子、及びこれらに置換基をつけたものが挙げられる。なお、置換基としては、Arにおけるそれと、具体例及び好ましい例は同じである。
Qで表される配位子の中でも、好ましいものとしては、ホスフィン類、ピリジン類、含窒素複素環化合物、アミン類、エーテル類、ジホスフィン類、ジイミン類、β−ジケトナト類、異なる配位原子を持つ二座配位子であり、より好ましいのはホスフィン類、ピリジン類、アミン類、エーテル類、ジホスフィン類、ジイミン類、異なる配位原子を持つ二座配位子であり、さらに好ましいものとしては、ピリジン類、エーテル類、ジホスフィン類、ジイミン類、異なる配位原子を持つ二座配位子である。
Here, as monodentate ligands, phosphines such as triphenylphosphine, tri (p-tolyl) phosphine, tri (p-methoxyphenyl) phosphine, tri (p-fluorophenyl) phosphine; pyridine, picoline, p- Pyridines such as t-butylpyridine and quinoline; nitrogen-containing heterocyclic compounds such as pyrrole, pyrazole and imidazole; triethylamine, tripropylamine, tributylamine, diethylamine, dipropylamine, dibutylamine, dicyclohexylamine, piperidine, piperazine, aniline , N-methylaniline, N, N-dimethylaniline, diphenylamine and other amines; diethyl ether, tetrahydrofuran, tetrahydropyran, diisopropyl ether, dibutyl ether, cyclopentylmethyl ether Ethers such as tellurium; sulfides such as dimethyl sulfide, diethyl sulfide, and tetrahydrothiophene; thiolates such as methanethiolate, ethanethiolate, 2-propanethiolate, 2-methyl-2-propanethiolate, and benzenethiolate, and their substitution The one with the group is mentioned. As the substituent, specific examples and preferred examples are the same as those in Ar.
As the polydentate ligand, bis (diphenylphosphino) methane, bis (diphenylphosphino) ethane, bis (diphenylphosphino) propane, bis (diphenylphosphino) benzene, bis (diphenylphosphino) naphthalene, Diphosphines such as bis (diphenylphosphino) biphenyl and bis (diphenylphosphino) binaphthyl; diimines such as bipyridine, phenanthroline, neocuproin, bathophenanthroline and bathocuproin; and carbochelates such as acetate, propionate, pivalonate and benzoate; , Β-diketonates such as 1,3-diphenyl-1,3-propanedionate, 1,1,1,3,3,3-hexafluoroacetylacetonate; ethanedithiolate, propanedi Dithiolates such as oleate and benzenedithiolate; having different coordination atoms such as diphenylphosphino-2-pyridine, 2-diphenylphosphino-2-dimethylamino-1,1-biphenyl, 2-aminoethyl-diphenylphosphine Bidentate ligand; tridentate ligand such as 2,6-bis (2-pyridyl) pyridine, diethylenetriamine, 1,4,7-triazacyclononane; triethylenetetramine, 1,4,7,10- Examples thereof include tetradentate ligands such as tetraazacyclododecane and 1,4,8,11-tetraazacyclotetradecane, and those having a substituent added thereto. As the substituent, specific examples and preferred examples are the same as those in Ar.
Among the ligands represented by Q, preferred are phosphines, pyridines, nitrogen-containing heterocyclic compounds, amines, ethers, diphosphines, diimines, β-diketonates, different coordination atoms. More preferred are phosphines, pyridines, amines, ethers, diphosphines, diimines, bidentate ligands having different coordination atoms, and more preferred are , Pyridines, ethers, diphosphines, diimines, and bidentate ligands having different coordination atoms.
前記式(I)中、cは0以上の数であり、式(I)で表される多核錯体が混合物の場合は平均値として表され、bとのモル比を求められる分析手法(例えば、1H NMR)により決定することができる。好ましくは0〜100の数であり、より好ましくは0〜20の数であり、さらに好ましくは0〜10の数であり、特に好ましくは0〜4の数である。 In the formula (I), c is a number of 0 or more, and when the polynuclear complex represented by the formula (I) is a mixture, it is represented as an average value, and an analytical method for obtaining a molar ratio with b (for example, 1 H NMR). Preferably it is a number of 0-100, More preferably, it is a number of 0-20, More preferably, it is a number of 0-10, Most preferably, it is a number of 0-4.
Xはカウンターイオンである。カウンターイオンとしては、カウンターアニオン、カウンターカチオンが挙げられ、錯体を中性に保つ観点からは、カウンターアニオンを含むものが好ましい。 X is a counter ion. Examples of the counter ion include a counter anion and a counter cation, and those containing a counter anion are preferable from the viewpoint of keeping the complex neutral.
カウンターアニオンとしては、ブレンステッド酸の共役塩基が好ましく、ヘテロ原子を含むブレンステッド酸の共役塩基がより好ましい。カウンターアニオンとしては、例えば、フッ化物イオン、塩化物イオン、臭化物イオン、ヨウ化物イオン、硫酸イオン、硝酸イオン、炭酸イオン、酢酸イオン、過塩素酸イオン、テトラフルオロボレートイオン、ヘキサフルオロホスフェイトイオン、メタンスルホン酸イオン、トリフルオロメタンスルホン酸イオン、トリフルオロ酢酸イオン、ベンゼンスルホン酸イオン、パラトルエンスルホン酸イオン、ドデシルベンゼンスルホン酸イオン、テトラフェニルボレートイオン、テトラキス(ペンタフルオロフェニル)ボレートイオン、これらのイオンの構造を有する繰り返し単位を含む高分子化合物等が挙げられ、好ましくは塩化物イオン、臭化物イオン、ヨウ化物イオン、硫酸イオン、硝酸イオン、テトラフルオロボレートイオン、ヘキサフルオロホスフェイトイオン、トリフルオロメタンスルホン酸イオン、テトラフェニルボレートイオン、テトラキス(ペンタフルオロフェニル)ボレートイオンである。 The counter anion is preferably a Bronsted acid conjugate base, more preferably a Bronsted acid conjugate base containing a hetero atom. Examples of the counter anion include fluoride ion, chloride ion, bromide ion, iodide ion, sulfate ion, nitrate ion, carbonate ion, acetate ion, perchlorate ion, tetrafluoroborate ion, hexafluorophosphate ion, Methanesulfonate ion, trifluoromethanesulfonate ion, trifluoroacetate ion, benzenesulfonate ion, p-toluenesulfonate ion, dodecylbenzenesulfonate ion, tetraphenylborate ion, tetrakis (pentafluorophenyl) borate ion, these ions And a polymer compound containing a repeating unit having the following structure, preferably chloride ion, bromide ion, iodide ion, sulfate ion, nitrate ion, tetrafluoroborate ion, hexa Le Oro phosphate ion, trifluoromethanesulfonate ion, a tetraphenylborate ion, tetrakis (pentafluorophenyl) borate ion.
カウンターカチオンとしては、アルカリ金属、アルカリ土類金属等の金属カチオンや、4級アンモニウムイオン、4級ホスフォニウムイオンこれらのイオンの構造を有する繰り返し単位を含む高分子化合物等を用いることもでき、好ましくは4級アンモニウムイオン、4級ホスフォニウムイオンである。 As the counter cation, a metal cation such as an alkali metal or an alkaline earth metal, a quaternary ammonium ion, a quaternary phosphonium ion, a polymer compound containing a repeating unit having a structure of these ions, or the like can be preferably used. Is a quaternary ammonium ion or a quaternary phosphonium ion.
dは0以上の数であり、式(I)で表される多核錯体として中性を保つように決定され、式(I)で表される多核錯体が混合物の場合は平均値として表される。dは、好ましくは0〜100の数であり、より好ましくは0〜20の数であり、さらに好ましくは0〜10の数であり、特に好ましくは0〜6の数である。 d is a number of 0 or more, and is determined so as to maintain neutrality as the polynuclear complex represented by the formula (I). When the polynuclear complex represented by the formula (I) is a mixture, it is represented as an average value. . d is preferably a number from 0 to 100, more preferably a number from 0 to 20, even more preferably a number from 0 to 10, and particularly preferably a number from 0 to 6.
本発明の多核錯体として、具体的には、下図の錯体が挙げられる。
いずれも(m+1)+の電荷を持ち、下図において式(I)におけるXは省略している。a、b及びcは前記と同じ定義であり、c1及びc2は0以上の数(通常、c1及びc2は0以上の整数)であり、c1+c2=cである。
Specific examples of the polynuclear complex of the present invention include the complexes shown below.
Each of them has a charge of (m + 1) +, and X in the formula (I) is omitted in the figure below. a, b and c are as defined above, c 1 and c 2 are numbers of 0 or more (usually, c 1 and c 2 are integers of 0 or more), and c 1 + c 2 = c.
本発明の多核錯体は、例えば、配位子Q(例えば、1,2−ビス(ジフェニルホスフィノ)ベンゼンやテトラヒドロフラン)と、Mに対応する金属塩(例えば、テトラキス(アセトニトリル)銅(I)トリフルオロメタンスルホン酸塩)とを、溶媒(例えば、テトラヒドロフラン)中で反応させた後、配位子化合物Ar(PR2)4(例えば、1,2,4,5−テトラキス(ジフェニルホスフィノ)ベンゼン)と反応させることにより製造することができる。 The polynuclear complex of the present invention includes, for example, a ligand Q (for example, 1,2-bis (diphenylphosphino) benzene or tetrahydrofuran) and a metal salt corresponding to M (for example, tetrakis (acetonitrile) copper (I) trifluoro). And then reacting with a ligand compound Ar (PR 2 ) 4 (for example, 1,2,4,5-tetrakis (diphenylphosphino) benzene). It can manufacture by making it react.
本発明の多核錯体は発光性を有することが好ましく、発光効率の観点からは燐光発光性を有するものがより好ましい。 The polynuclear complex of the present invention preferably has a light-emitting property, and more preferably has a phosphorescence-emitting property from the viewpoint of light emission efficiency.
本発明の発光素子は、本発明の多核錯体を含むものである。
本発明の発光素子としては、陽極と陰極とからなる一対の電極間に少なくとも発光層を有する一層又は複数層からなる薄膜層が挟持されている発光素子において、該薄膜層の少なくとも1層が、本発明の多核錯体を含有するものが挙げられる。
The light emitting device of the present invention includes the multinuclear complex of the present invention.
As the light-emitting element of the present invention, in a light-emitting element in which a single-layer or multiple-layer thin film layer having at least a light-emitting layer is sandwiched between a pair of electrodes composed of an anode and a cathode, at least one of the thin-film layers is The thing containing the polynuclear complex of this invention is mentioned.
本発明の多核錯体を含有する薄膜層中の本発明の多核錯体の含有量としては、層全体の重量に対し、通常、0.1〜100重量%であり、0.1〜30重量%が好ましく、0.5〜15重量%がより好ましく、1〜10重量%が特に好ましい。本発明の発光素子としては、前記発光層が、本発明の多核錯体を発光する材料として含有するものが好ましい。 As content of the multinuclear complex of this invention in the thin film layer containing the multinuclear complex of this invention, it is 0.1-100 weight% normally with respect to the weight of the whole layer, and 0.1-30 weight% is 0.1 to 30 weight%. Preferably, 0.5 to 15% by weight is more preferable, and 1 to 10% by weight is particularly preferable. As the light emitting device of the present invention, the light emitting layer preferably contains the polynuclear complex of the present invention as a material for emitting light.
本発明の発光素子として、単層型のもの(陽極/発光層/陰極)が挙げられ、この発光層が本発明の多核錯体を含有する。また、多層型の発光素子の層構成としては、
(a)陽極/正孔注入層/(正孔輸送層)/発光層/陰極
(b)陽極/発光層/電子注入層/(電子輸送層)/陰極
(c)陽極/正孔注入層/(正孔輸送層)/発光層/電子注入層/(電子輸送層)/陰極等が挙げられる。
上記(a)〜(c)において、(正孔輸送層)、(電子輸送層)は、その位置にこれらの層が、それぞれ存在してもしなくてもよいことを表す。
Examples of the light emitting device of the present invention include a single layer type (anode / light emitting layer / cathode), and this light emitting layer contains the polynuclear complex of the present invention. In addition, as a layer configuration of the multilayer light emitting element,
(A) anode / hole injection layer / (hole transport layer) / light emitting layer / cathode (b) anode / light emitting layer / electron injection layer / (electron transport layer) / cathode (c) anode / hole injection layer / (Hole transport layer) / light emitting layer / electron injection layer / (electron transport layer) / cathode and the like.
In the above (a) to (c), (hole transport layer) and (electron transport layer) indicate that these layers may or may not exist at the positions.
本発明の発光素子の陽極は、正孔注入層、正孔輸送層、発光層等に正孔を供給するものであり、4.5eV以上の仕事関数を有することが効果的である。陽極の材料には、金属、合金、金属酸化物、電気伝導性化合物及びこれらの混合物等を用いることができる。具体的には、酸化スズ、酸化亜鉛、酸化インジウム、酸化インジウムスズ(ITO)等の導電性金属酸化物、及び金、銀、クロム、ニッケル等の金属、さらにこれらの導電性金属酸化物と金属との混合物及び積層物、ヨウ化銅、硫化銅等の無機導電性物質、ポリアニリン類、ポリチオフェン類〔PEDOT等〕、ポリピロール等の有機導電性材料及びこれらとITOとの積層物等が挙げられる。 The anode of the light emitting device of the present invention supplies holes to a hole injection layer, a hole transport layer, a light emitting layer and the like, and it is effective to have a work function of 4.5 eV or more. As the material of the anode, metals, alloys, metal oxides, electrically conductive compounds, mixtures thereof, and the like can be used. Specifically, conductive metal oxides such as tin oxide, zinc oxide, indium oxide, and indium tin oxide (ITO), metals such as gold, silver, chromium, and nickel, and these conductive metal oxides and metals And an inorganic conductive material such as copper iodide and copper sulfide, an organic conductive material such as polyaniline, polythiophene [PEDOT] and polypyrrole, and a laminate of these with ITO.
本発明の発光素子の陰極は、電子注入層、電子輸送層、発光層等に電子を供給するものである。陰極の材料には、金属、合金、金属ハロゲン化物、金属酸化物、電気伝導性化合物及びこれらの混合物等を用いることができる。陰極の材料の具体例としては、アルカリ金属(Li、Na、K等)並びにそのフッ化物及び酸化物、アルカリ土類金属(Mg、Ca、Ba、Cs等)並びにそのフッ化物及び酸化物、金、銀、鉛、アルミニウム、合金及び混合金属類〔ナトリウム−カリウム合金、ナトリウム−カリウム混合金属、リチウム−アルミニウム合金、リチウム−アルミニウム混合金属、マグネシウム−銀合金、マグネシウム−銀混合金属等〕、インジウム、イッテルビウム等の希土類金属等が挙げられる。 The cathode of the light emitting device of the present invention supplies electrons to an electron injection layer, an electron transport layer, a light emitting layer and the like. As the material of the cathode, metals, alloys, metal halides, metal oxides, electrically conductive compounds, mixtures thereof, and the like can be used. Specific examples of cathode materials include alkali metals (Li, Na, K, etc.) and their fluorides and oxides, alkaline earth metals (Mg, Ca, Ba, Cs, etc.), their fluorides and oxides, gold Silver, lead, aluminum, alloys and mixed metals (sodium-potassium alloy, sodium-potassium mixed metal, lithium-aluminum alloy, lithium-aluminum mixed metal, magnesium-silver alloy, magnesium-silver mixed metal, etc.), indium, And rare earth metals such as ytterbium.
本発明の発光素子の正孔注入層及び正孔輸送層は、陽極から正孔を注入する機能、正孔を輸送する機能、陰極から注入された電子を障壁する機能のいずれかを有しているものであればよい。正孔注入層及び正孔輸送層には、公知の材料を適宜選択して使用できるが、これらの層に用いられる材料の具体例としては、カルバゾール誘導体、トリアゾール誘導体、オキサゾール誘導体、オキサジアゾール誘導体、イミダゾール誘導体、ポリアリールアルカン誘導体、ピラゾリン誘導体、ピラゾロン誘導体、フェニレンジアミン誘導体、アリールアミン誘導体、アミノ置換カルコン誘導体、スチリルアントラセン誘導体、フルオレノン誘導体、ヒドラゾン誘導体、スチルベン誘導体、シラザン誘導体、芳香族第三級アミン化合物、スチリルアミン化合物、芳香族ジメチリディン系化合物、ポルフィリン系化合物、ポリシラン系化合物、ポリ(N−ビニルカルバゾール)誘導体、有機シラン誘導体、本発明の多核錯体等、及びこれらを含む重合体が挙げられる。また、前記材料としては、アニリン系共重合体、チオフェンオリゴマー、ポリチオフェン等の導電性高分子オリゴマーも挙げることができる。前記材料は単成分であっても、複数の成分からなる組成物であってもよい。また、前記正孔注入層及び前記正孔輸送層は、前記材料の1種又は2種以上からなる単層構造であってもよいし、同一組成又は異種組成の複数層からなる多層構造であってもよい。 The hole injection layer and the hole transport layer of the light emitting device of the present invention have any one of a function of injecting holes from the anode, a function of transporting holes, and a function of blocking electrons injected from the cathode. If it is, Known materials can be appropriately selected and used for the hole injection layer and the hole transport layer. Specific examples of materials used for these layers include carbazole derivatives, triazole derivatives, oxazole derivatives, oxadiazole derivatives. , Imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, aromatic tertiary amines Compounds, styrylamine compounds, aromatic dimethylidin compounds, porphyrin compounds, polysilane compounds, poly (N-vinylcarbazole) derivatives, organosilane derivatives, polynuclear complexes of the present invention, and the like Coalescence, and the like. Examples of the material include conductive polymer oligomers such as aniline copolymers, thiophene oligomers, and polythiophene. The material may be a single component or a composition comprising a plurality of components. Further, the hole injection layer and the hole transport layer may have a single layer structure composed of one or more of the materials, or a multilayer structure composed of a plurality of layers having the same composition or different compositions. May be.
本発明の発光素子の電子注入層及び電子輸送層は、陰極から電子を注入する機能、電子を輸送する機能、陽極から注入された正孔を障壁する機能のいずれかを有しているものであればよい。電子注入層及び電子輸送層には、公知の材料を適宜選択して使用できるが、これらの層に用いられる材料の具体例としては、トリアゾール誘導体、オキサゾール誘導体、オキサジアゾール誘導体、イミダゾール誘導体、フルオレノン誘導体、アントラキノジメタン誘導体、アントロン誘導体、ジフェニルキノン誘導体、チオピランジオキシド誘導体、カルボジイミド誘導体、フルオレニリデンメタン誘導体、ジスチリルピラジン誘導体、ナフタレン、ペリレン等の芳香環テトラカルボン酸無水物、フタロシアニン誘導体、8−キノリノール誘導体の金属錯体やメタルフタロシアニン、ベンゾオキサゾールやベンゾチアゾールを配位子とする金属錯体に代表される各種金属錯体、有機シラン誘導体、本発明の多核錯体等が挙げられる。また、前記電子注入層及び前記電子輸送層は、前記材料の1種又は2種以上からなる単層構造であってもよいし、同一組成又は異種組成の複数層からなる多層構造であってもよい。 The electron injection layer and the electron transport layer of the light emitting device of the present invention have any one of a function of injecting electrons from the cathode, a function of transporting electrons, and a function of blocking holes injected from the anode. I just need it. Known materials can be appropriately selected and used for the electron injection layer and the electron transport layer. Specific examples of materials used for these layers include triazole derivatives, oxazole derivatives, oxadiazole derivatives, imidazole derivatives, and fluorenone. Derivatives, anthraquinodimethane derivatives, anthrone derivatives, diphenylquinone derivatives, thiopyrandioxide derivatives, carbodiimide derivatives, fluorenylidenemethane derivatives, distyrylpyrazine derivatives, aromatic ring tetracarboxylic anhydrides such as naphthalene and perylene, phthalocyanine derivatives , 8-quinolinol derivative metal complexes, metal phthalocyanines, various metal complexes represented by metal complexes having benzoxazole or benzothiazole as a ligand, organic silane derivatives, the polynuclear complex of the present invention, and the like. In addition, the electron injection layer and the electron transport layer may have a single layer structure composed of one or more of the materials, or a multilayer structure composed of a plurality of layers having the same composition or different compositions. Good.
また、本発明の発光素子において、電子注入層、電子輸送層を構成する物質として、絶縁体又は半導体の無機化合物も使用することもできる。電子注入層、電子輸送層が絶縁体や半導体で構成されていれば、電流のリークを有効に防止して、電子注入性を向上させることができる。このような絶縁体としては、アルカリ金属カルコゲニド(以下、「カルコゲニド」は、酸化物も含む。)、アルカリ土類金属カルコゲニド、アルカリ金属のハロゲン化物及びアルカリ土類金属のハロゲン化物からなる群から選択される少なくとも一つの金属化合物を使用できる。具体的に、好ましいアルカリ土類金属カルコゲニドとしては、例えば、CaO、BaO、SrO、BeO、BaS及びCaSeが挙げられる。また、電子注入層、電子輸送層を構成する半導体として、Ba、Ca、Sr、Yb、Al、Ga、In、Li、Na、Cd、Mg、Si、Ta、Sb及びZnの少なくとも一つの元素を含む酸化物、窒化物又は酸窒化物等の一種単独又は二種以上の組み合わせも挙げることができる。 In the light-emitting element of the present invention, an insulator or a semiconductor inorganic compound can also be used as a substance constituting the electron injection layer and the electron transport layer. If the electron injection layer and the electron transport layer are made of an insulator or a semiconductor, current leakage can be effectively prevented and the electron injection property can be improved. Such an insulator is selected from the group consisting of alkali metal chalcogenides (hereinafter “chalcogenide” includes oxides), alkaline earth metal chalcogenides, alkali metal halides and alkaline earth metal halides. At least one metal compound can be used. Specifically, preferred alkaline earth metal chalcogenides include, for example, CaO, BaO, SrO, BeO, BaS, and CaSe. Further, as a semiconductor constituting the electron injection layer and the electron transport layer, at least one element of Ba, Ca, Sr, Yb, Al, Ga, In, Li, Na, Cd, Mg, Si, Ta, Sb, and Zn is used. One kind alone or a combination of two or more kinds of oxides, nitrides, oxynitrides, and the like may also be included.
また、本発明においては、陰極と接する薄膜との界面領域に還元性ドーパントが添加されていてもよい。好ましい還元性ドーパントとしては、アルカリ金属、アルカリ土類金属の酸化物、アルカリ土類金属、希土類金属、アルカリ金属の酸化物、アルカリ金属のハロゲン化物、アルカリ土類金属の酸化物、アルカリ土類金属のハロゲン化物、希土類金属の酸化物又は希土類金属のハロゲン化物、アルカリ金属錯体、アルカリ土類金属錯体、及び希土類金属錯体からなる群から選ばれる少なくとも一つの化合物である。 Moreover, in this invention, the reducing dopant may be added to the interface area | region with the thin film which contact | connects a cathode. Preferred reducing dopants include alkali metals, alkaline earth metal oxides, alkaline earth metals, rare earth metals, alkali metal oxides, alkali metal halides, alkaline earth metal oxides, alkaline earth metals. And at least one compound selected from the group consisting of rare earth metal oxides or rare earth metal halides, alkali metal complexes, alkaline earth metal complexes, and rare earth metal complexes.
本発明の発光素子の発光層は、電界印加時に陽極又は正孔注入層より正孔を注入することができ、陰極又は電子注入層より電子を注入することができる機能、注入した電荷(電子と正孔)を電界の力で移動させる機能、電子と正孔の再結合の場を提供し、これを発光につなげる機能を有するものである。本発明の発光素子の発光層は、本発明の多核錯体を含有すると好ましく、この多核錯体をゲスト材料とするホスト材料を含有させてもよい。前記ホスト材料としては、例えば、フルオレン骨格を有するもの、カルバゾール骨格を有するもの、ジアリールアミン骨格を有するもの、ピリジン骨格を有するもの、ピラジン骨格を有するもの、トリアジン骨格を有するもの及びアリールシラン骨格を有するもの等が挙げられる。前記ホスト材料のT1(最低三重項励起状態のエネルギーレベル)は、ゲスト材料のそれより大きいことが好ましく、その差が0.2eVよりも大きいことがさらに好ましい。前記ホスト材料は低分子化合物であっても、高分子化合物であってもよい。また、前記ホスト材料と前記多核錯体等の発光材料とを混合して塗布するか、或いは共蒸着等することによって、前記発光材料が前記ホスト材料にドープされた発光層を形成することができる。 The light-emitting layer of the light-emitting element of the present invention can inject holes from the anode or the hole injection layer when an electric field is applied, and can inject electrons from the cathode or the electron injection layer. It has a function of moving holes) by the force of an electric field, a field of recombination of electrons and holes, and a function of connecting this to light emission. The light emitting layer of the light emitting device of the present invention preferably contains the multinuclear complex of the present invention, and may contain a host material using the multinuclear complex as a guest material. Examples of the host material include those having a fluorene skeleton, those having a carbazole skeleton, those having a diarylamine skeleton, those having a pyridine skeleton, those having a pyrazine skeleton, those having a triazine skeleton, and those having an arylsilane skeleton. And the like. The host material T1 (energy level of the lowest triplet excited state) is preferably larger than that of the guest material, and more preferably the difference is larger than 0.2 eV. The host material may be a low molecular compound or a high molecular compound. In addition, a light-emitting layer in which the host material is doped with the host material can be formed by mixing and applying the host material and a light-emitting material such as the polynuclear complex, or by co-evaporation.
本発明の発光素子では、前記各層の形成方法は特に限定されず公知の方法を使用できる。前記形成方法としては、具体的には、真空蒸着法〔抵抗加熱蒸着法、電子ビーム法等〕、スパッタリング法、LB法、分子積層法、塗布法〔キャスティング法、スピンコート法、バーコート方、ブレードコート法、ロールコート法、グラビア印刷、スクリーン印刷、インクジェット法等〕等が挙げられる。この中では製造プロセスを簡略化できる点で、塗布で成膜することが好ましい。前記塗布法では、本発明の多核錯体を溶媒と混合して塗布液を調製し、該塗布液を所望の層(又は電極)上に、塗布・乾燥することによって形成することができる。塗布液中にはホスト材料及び/又はバインダーとして樹脂を含有させてもよく、樹脂は溶媒に溶解状態とすることも、分散状態とすることもできる。前記樹脂としては、非共役系高分子(例えば、ポリビニルカルバゾール)、共役系高分子(例えば、ポリオレフィン系高分子)を使用することができる。より具体的には、例えば、ポリ塩化ビニル、ポリカーボネート、ポリスチレン、ポリメチルメタクリレート、ポリブチルメタクリレート、ポリエステル、ポリスルホン、ポリフェニレンオキシド、ポリブタジエン、ポリ(N−ビニルカルバゾール)、炭化水素樹脂、ケトン樹脂、フェノキシ樹脂、ポリアミド、エチルセルロース、酢酸ビニル、ABS樹脂、ポリウレタン、メラミン樹脂、不飽和ポリエステル樹脂、アルキド樹脂、エポキシ樹脂、シリコン樹脂等から目的に応じて選択できる。溶液は目的に応じて副成分として、酸化防止剤、粘度調整剤等を含有してもよい。 In the light emitting device of the present invention, a method for forming each layer is not particularly limited, and a known method can be used. Specific examples of the forming method include a vacuum deposition method (resistance heating deposition method, electron beam method, etc.), sputtering method, LB method, molecular lamination method, coating method (casting method, spin coating method, bar coating method, Blade coating method, roll coating method, gravure printing, screen printing, ink jet method, etc.]. Among these, it is preferable to form a film by coating because the manufacturing process can be simplified. In the coating method, the polynuclear complex of the present invention can be mixed with a solvent to prepare a coating solution, and the coating solution can be formed on a desired layer (or electrode) by coating and drying. The coating liquid may contain a resin as a host material and / or a binder, and the resin can be dissolved in a solvent or dispersed. As the resin, a non-conjugated polymer (for example, polyvinyl carbazole) or a conjugated polymer (for example, a polyolefin-based polymer) can be used. More specifically, for example, polyvinyl chloride, polycarbonate, polystyrene, polymethyl methacrylate, polybutyl methacrylate, polyester, polysulfone, polyphenylene oxide, polybutadiene, poly (N-vinylcarbazole), hydrocarbon resin, ketone resin, phenoxy resin. , Polyamide, ethyl cellulose, vinyl acetate, ABS resin, polyurethane, melamine resin, unsaturated polyester resin, alkyd resin, epoxy resin, silicone resin, and the like. The solution may contain an antioxidant, a viscosity modifier and the like as subcomponents depending on the purpose.
溶液の溶媒は薄膜の成分を均一に溶解又は分散し安定なものを公知の溶媒から適宜選択して使用できる。このような溶媒として、アルコール類〔メタノール、エタノール、イソプロピルアルコール等〕、ケトン類〔アセトン、メチルエチルケトン等〕、有機塩素類〔クロロホルム、1,2−ジクロロエタン等〕、芳香族炭化水素類〔ベンゼン、トルエン、キシレン等〕、脂肪族炭化水素類〔ノルマルヘキサン、シクロヘキサン等〕、アミド類〔ジメチルホルムアミド等〕、スルホキシド類〔ジメチルスルホキシド等〕等が挙げられる。溶媒は単成分であっても複数の成分の混合物であってもよい。 As the solvent of the solution, a stable one in which the components of the thin film are uniformly dissolved or dispersed can be appropriately selected from known solvents. Examples of such solvents include alcohols (methanol, ethanol, isopropyl alcohol, etc.), ketones (acetone, methyl ethyl ketone, etc.), organic chlorines (chloroform, 1,2-dichloroethane, etc.), and aromatic hydrocarbons (benzene, toluene). , Xylene, etc.], aliphatic hydrocarbons [normal hexane, cyclohexane, etc.], amides [dimethylformamide, etc.], sulfoxides [dimethyl sulfoxide, etc.] and the like. The solvent may be a single component or a mixture of a plurality of components.
インクジェット法においては、インクの吐出性及びその再現性のために公知の成分を用いることができる。例えば、ノズルからの蒸発を押さえるために高沸点の溶媒〔アニソール、ビシクロヘキシルベンゼン等〕を成分に用いることができる。また、成分を選択して、インクとして用いる溶液の粘度を1〜100mPa・sとすることが好ましい。 In the ink jet method, known components can be used for ink ejection and reproducibility. For example, a solvent having a high boiling point (such as anisole or bicyclohexylbenzene) can be used as a component in order to suppress evaporation from the nozzle. Moreover, it is preferable that the viscosity of the solution used as the ink is selected from 1 to 100 mPa · s by selecting the components.
本発明の発光素子の各有機層の好ましい膜厚は、材料の種類や層構成によって異なり特に制限されないが、一般的には膜厚が薄すぎるとピンホール等の欠陥が生じやすく、逆に厚すぎると高い印加電圧が必要となり効率が悪くなるため、通常は数nmから1μmの範囲が好ましい。 The preferred film thickness of each organic layer of the light emitting device of the present invention varies depending on the type of material and the layer structure and is not particularly limited, but in general, if the film thickness is too thin, defects such as pinholes are likely to occur. If it is too high, a high applied voltage is required and the efficiency is deteriorated. Therefore, the range of several nm to 1 μm is usually preferable.
本発明の発光素子は、例えば、照明用光源、サイン用光源、バックライト用光源、ディスプレイ装置、プリンターヘッド等に用いることができる。ディスプレイ装置としては公知の駆動技術、駆動回路等を用い、セグンメント型、ドットマトリクス型等の構成を選択することができる。 The light emitting device of the present invention can be used for, for example, an illumination light source, a sign light source, a backlight light source, a display device, a printer head, and the like. As the display device, a known drive technology, drive circuit, or the like can be used to select a segment type, a dot matrix type, or the like.
次に、本発明の多核錯体の他の用途について説明する。本発明の多核錯体は適宣その構造を選択することにより多核錯体の公知の用途に使用することができる。このような用途としては、触媒、磁性体等を挙げることができる。触媒としては、例えば、酸化還元反応等の反応に用いるものを挙げることができる。 Next, other uses of the multinuclear complex of the present invention will be described. The polynuclear complex of the present invention can be used for known uses of the polynuclear complex by appropriately selecting its structure. Examples of such applications include catalysts and magnetic materials. Examples of the catalyst include those used for reactions such as oxidation-reduction reactions.
実施例1
化合物(1)
2−(ジフェニルホスフィノ)−2'−(N,N−ジメチルアミノ)−ビフェニル40mgをTHF(2mL)に溶解し、テトラキス(アセトニトリル)銅(I)トリフルオロメタンスルホン酸塩40mgを加え、1時間反応させ、ほぼ無色に近い淡黄色透明の溶液を得た。この溶液を、1,2,4,5−テトラキス(ジフェニルホスフィノベンゼン)40mgのTHF(2mL)溶液に加えると、淡黄色沈殿が生成した。2時間攪拌を継続して反応させた後、ジエチルエーテル(8mL)を加えて析出させた沈殿を濾過して集め、さらにジエチルエーテル(2mL)で2回洗浄し、さらに乾燥させることで化合物(1)を得た。アセトニトリル−d3で1H NMRを測定し、積分比から2つのリン配位子やTHF分子の数を決定して、上記化学式の組成であると推定した。これを基にした元素分析計算値C(63.45%)、H(4.19%)、N(0.21%)/測定値C(62.93%)、H(4.20%)、N(0.33%)。この化合物の粉末が0.2重量%になるように、ポリメチルメタクリレートの0.8重量%トルエン溶液に懸濁させた液を石英板にスピンコートして薄膜を得て、蛍光分光光度計(JOBINYVON−SPEX社製、Fluorolog)を用いて、励起波長350nmでの発光スペクトルを測定した。発光極大は569nmであった。
Example 1
Compound (1)
40 mg of 2- (diphenylphosphino) -2 ′-(N, N-dimethylamino) -biphenyl is dissolved in THF (2 mL), and 40 mg of tetrakis (acetonitrile) copper (I) trifluoromethanesulfonate is added for 1 hour. Reaction was performed to obtain a light yellow transparent solution almost colorless. When this solution was added to a solution of 40 mg of 1,2,4,5-tetrakis (diphenylphosphinobenzene) in THF (2 mL), a pale yellow precipitate was formed. After continuing the reaction for 2 hours, the reaction was continued by adding diethyl ether (8 mL), and the deposited precipitate was collected by filtration, further washed twice with diethyl ether (2 mL), and further dried to give compound (1 ) 1 H NMR was measured with acetonitrile-d 3 , and the number of two phosphorus ligands and THF molecules were determined from the integration ratio, and the composition of the above chemical formula was estimated. Elemental analysis calculation values C (63.45%), H (4.19%), N (0.21%) / measured value C (62.93%), H (4.20%) based on this , N (0.33%). A thin film is obtained by spin-coating a liquid suspended in a 0.8% by weight toluene solution of polymethyl methacrylate so that the powder of this compound is 0.2% by weight on a quartz plate. The emission spectrum at an excitation wavelength of 350 nm was measured using JOBLOGY VON-SPEX (Fluorolog). The emission maximum was 569 nm.
実施例2
化合物(2)
実施例1と同様にして、2−(ジフェニルホスフィノ)−2'−(N,N−ジメチルアミノ)−ビフェニル40mgの代わりに2,2'−ビス(ジフェニルホスフィノ)−1,1'−ビナフチル60mgを用いて、化合物(2)を得た。アセトニトリル−d3で1H NMRを測定し、積分比から2つのリン配位子やTHF分子の数を決定して、上記化学式の組成であると推定した。これを基にした元素分析計算値C(64.43%)、H(4.27%)/測定値C(65.95%)、H(4.51%)。
実施例1と同様にして、薄膜を得て、発光スペクトルを測定した。発光極大は564nmであった。
Example 2
Compound (2)
In the same manner as in Example 1, instead of 40 mg of 2- (diphenylphosphino) -2 '-(N, N-dimethylamino) -biphenyl, 2,2'-bis (diphenylphosphino) -1,1'- Compound (2) was obtained using 60 mg of binaphthyl. 1 H NMR was measured with acetonitrile-d 3 , and the number of two phosphorus ligands and THF molecules were determined from the integration ratio, and the composition of the above chemical formula was estimated. Elemental analysis calculated values C (64.43%), H (4.27%) / measured values C (65.95%), H (4.51%) based on this.
In the same manner as in Example 1, a thin film was obtained and the emission spectrum was measured. The emission maximum was 564 nm.
実施例3
化合物(3)
実施例1と同様にして、2−(ジフェニルホスフィノ)−2'−(N,N−ジメチルアミノ)−ビフェニル40mgの代わりに1,2−ビス(ジフェニルホスフィノ)ベンゼン44mgを用いて、化合物(3)を得た。アセトニトリル−d3で1H NMRを測定し、積分比から2つのリン配位子やTHF分子の数を決定して、上記化学式の組成であると推定した。これを基にした元素分析計算値C(62.78%)、H(4.35%)/測定値C(62.61%)、H(4.26%)。実施例1と同様にして、薄膜を得て、発光スペクトルを測定した。581nmにピークをもつ発光スペクトルが観測された。
Example 3
Compound (3)
In the same manner as in Example 1, 44 mg of 1,2-bis (diphenylphosphino) benzene was used instead of 40 mg of 2- (diphenylphosphino) -2 '-(N, N-dimethylamino) -biphenyl. (3) was obtained. 1 H NMR was measured with acetonitrile-d 3 , and the number of two phosphorus ligands and THF molecules were determined from the integration ratio, and the composition of the above chemical formula was estimated. Elemental analysis calculated values C (62.78%), H (4.35%) / measured values C (62.61%), H (4.26%) based on this. In the same manner as in Example 1, a thin film was obtained and the emission spectrum was measured. An emission spectrum having a peak at 581 nm was observed.
Claims (6)
(式(I)中、Mは11族の金属原子又は金属イオンを表し、aは2以上の数を表す。複数個のMはそれぞれ同一であっても異なっていてもよい。Arは芳香環を含む4価の有機基を表し、bは1以上の数を表す。Arが複数存在する場合、それぞれ同一であっても異なっていてもよい。Rは置換されてもよい炭化水素基を表す。複数のRは、それぞれ同一であっても異なっていてもよい。Qは窒素原子、リン原子、酸素原子及び硫黄原子からなる群から選ばれる配位原子を持つ配位子を表し、cは0以上の数である。Qが複数存在する場合、それらは、同一であっても異なっていてもよい。Xはカウンターイオンを表し、dは0以上の数である。Xが複数存在する場合、それぞれ同一であっても異なっていてもよい。) A polynuclear complex represented by the following formula (I).
(In formula (I), M represents a group 11 metal atom or metal ion, a represents a number of 2 or more, and a plurality of M may be the same or different. Ar represents an aromatic ring. And b represents a number of 1 or more, and when a plurality of Ars are present, they may be the same or different, and R represents a hydrocarbon group that may be substituted. A plurality of R may be the same or different, Q represents a ligand having a coordination atom selected from the group consisting of a nitrogen atom, a phosphorus atom, an oxygen atom and a sulfur atom, and c is It is a number greater than or equal to 0. When there are a plurality of Qs, they may be the same or different, X represents a counter ion, and d is a number greater than or equal to 0. When there are a plurality of Xs Each may be the same or different.)
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JPN6009005295; Organometallics (1996), Vol.15, No.6, p.1734-1739 * |
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