JP2009135514A5 - - Google Patents

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JP2009135514A5
JP2009135514A5 JP2009014769A JP2009014769A JP2009135514A5 JP 2009135514 A5 JP2009135514 A5 JP 2009135514A5 JP 2009014769 A JP2009014769 A JP 2009014769A JP 2009014769 A JP2009014769 A JP 2009014769A JP 2009135514 A5 JP2009135514 A5 JP 2009135514A5
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Japan
Prior art keywords
light
optical fiber
projecting
receiving
side optical
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JP2009014769A
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Japanese (ja)
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JP4835701B2 (en
JP2009135514A (en
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Priority to JP2009014769A priority Critical patent/JP4835701B2/en
Priority claimed from JP2009014769A external-priority patent/JP4835701B2/en
Publication of JP2009135514A publication Critical patent/JP2009135514A/en
Publication of JP2009135514A5 publication Critical patent/JP2009135514A5/ja
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Claims (3)

光ビームを出射る投光部と、検出領域からのビームを受光する受光部とを備えたセンサ部と、
前記投光部の光ビームを入射光とし、それを反射るリフレクタとを備え、
前記センサ部と前記リフレクタは、ウェハカセットの出入口を移動できる移動体に搭載されるものであり、
前記センサ部は、投光部と受光部の並び方向がウェハの厚み方向に対して垂直方向となる状態で、前記リフレクタは、入射したビームを受光部へ反射する状態で、それぞれ使用できるように移動体に搭載され、
センサ部とリフレクタ部との間の検出領域にウェハが存在する際に、光ビームがウェハにより遮られて受光光量が減ったことを検出することによって前記ウェハの有無を検出する、
ことを特徴とするウェハ検出用センサ。
A light projecting unit you emitting a light beam, a sensor unit and a light receiving portion for receiving the light beams from the detection area,
The light projecting unit and the light beam as the incident light, and a reflector you reflect it,
The sensor unit and the reflector are mounted on a movable body that can move the entrance / exit of the wafer cassette,
The sensor unit can be used in a state where the alignment direction of the light projecting unit and the light receiving unit is perpendicular to the thickness direction of the wafer, and the reflector can reflect the incident light beam to the light receiving unit. Mounted on a moving body,
When the wafer is present in the detection area between the sensor portion and the reflector portion, the light beam for detecting the presence or absence of the wafer by detecting the decreased is received light amount of the light receiving portion is blocked by the wafer,
A wafer detection sensor.
光ビームを出射る投光部と検出領域からのビームを受光する受光部とを備えたセンサ部と、前記投光部の光ビームを入射光としそれを反射るリフレクタと、センサ部に接続され、投光素子と受光素子と所定の検出回路とを備えたアンプ部とを備え、前記センサ部と前記リフレクタとの間の検出領域にウェハが存在する場合に、該ウェハが光ビームを遮って受光部の受光量が減ったことを検出することによってウェハの有無を検出するウェハ検出用センサであって、
前記センサ部は、
その軸線方向に沿って、投光側光ファイバー挿入孔部および受光側光ファイバー挿入孔部が平行に形成され、
投光側光ファイバー挿入孔部に挿入され、アンプ部の投光素子の光を導光する投光側光ファイバーと、受光側光ファイバー挿入孔部に挿入され、アンプ部の受光素子へ光を導光する受光側光ファイバーとが備えられ、
その軸線方向に沿って、投光側光ファイバー挿入孔部の先端に投光レンズ、受光側光ファイバー挿入孔部の先端に受光レンズとがそれぞれ設けられ、
その軸線方向とは直角方向に沿って投光口部および受光口部が設けられ、
投光口部と投光側光ファイバー挿入孔部との直交部に光軸に曲げる投光用反射部材と、
受光口部と受光側光ファイバー挿入孔部との直交部に光軸を直角に曲げる受光用反射部材とが装着され、
使用状態において、投光側光ファイバー挿入孔部及び受光側光ファイバー挿入孔部の並び方向、投光側光ファイバーと受光側光ファイバーとの並び方向、投光レンズと受光レンズとの並び方向、投光口部と受光口部との並び方向、投光用反射部材と受光用反射部材との並び方向のいずれもが、ウェハの厚み方向に対して垂直な方向となるように、前記センサ部をウェハカセット出入口を移動する移動体に搭載可能に構成した、
ことを特徴とするウェハ検出用センサ。
A sensor unit and a light receiving portion for receiving a light beam from a light projecting portion you emitting a light beam detection area, the light beam of the light projecting portion to the incident light and the reflector you reflecting it, sensor And an amplifier unit including a light projecting element, a light receiving element, and a predetermined detection circuit, and the wafer is optical when the wafer exists in a detection region between the sensor unit and the reflector. A wafer detection sensor that detects the presence or absence of a wafer by detecting a decrease in the amount of light received by a light receiving unit by blocking a beam,
The sensor unit is
Along the axial direction, the light emitting side optical fiber insertion hole and the light receiving side optical fiber insertion hole are formed in parallel,
Is inserted into the light projecting side optical fiber insertion hole portion, and the light projecting side optical fiber for guiding light of the light projecting elements of the amplifier section, it is inserted into the receiving side optical fiber insertion hole, guiding the light to the light receiving element of the amplifier unit And a light receiving side optical fiber,
Along the axial direction, a light projecting lens is provided at the tip of the light emitting side optical fiber insertion hole, and a light receiving lens is provided at the tip of the light receiving side optical fiber insertion hole,
A light emitting port portion and a light receiving port portion are provided along a direction perpendicular to the axial direction,
A projecting reflecting member that bends to the optical axis at an orthogonal portion between the projecting port and the projecting side optical fiber insertion hole;
A light-receiving reflecting member that bends the optical axis at a right angle is attached to an orthogonal part between the light-receiving port part and the light-receiving-side optical fiber insertion hole part,
In the state of use, the arrangement direction of the light emitting side optical fiber insertion hole and the light receiving side optical fiber insertion hole, the arrangement direction of the light emitting side optical fiber and the light receiving side optical fiber, the direction of arrangement of the light projecting lens and the light receiving lens, and the light emitting port part The sensor unit is placed in the wafer cassette inlet / outlet so that the direction in which the light receiving port part is aligned and the direction in which the light reflecting reflection member and light receiving reflective member are aligned are perpendicular to the thickness direction of the wafer. Configured to be mounted on a moving object
A wafer detection sensor.
ウェハが光ビームを遮り、これによる受光量の変化を検出することによって前記ウェハの有無を検出するウェハ検出用センサであって、
前記光ビームを出射る投光部と、検出領域からのビームを受光する受光部とを備えたセンサ部と、前記ビームを入射光としてそれを反射するリフレクタとを備えており、
前記センサ部は、センサ側保持体を構成するセンサ本体に保持され、該センサ本体には、その軸線方向に沿う投光側光ファイバー挿入孔部及び受光側光ファイバー挿入孔部とが平行に形成してあると共に、前記センサ本体の一側面には、前記センサ本体の軸線方向とは直角に沿って前記投光部の光ビームを前記リフレクタ側に出射させる投光口部及び前記リフレクタ側から反射されたビームを入射させる受光口部とがそれぞれ設けてあり、前記投光口部を前記投光側光ファイバー挿入孔部に直交させるとともに、前記受光口部を前記受光側光ファイバー挿入孔部に直向させ、
更に、前記センサ部は、前記投光側光ファイバー挿入孔部に挿入した投光側光ファイバーおよび前記受光側光ファイバー挿入孔部に挿入した受光側光ファイバーを介してアンプ部に接続されており、
該アンプ部は、前記投光部を前記投光側光ファイバーを介して投光する投光回路および前記受光側光ファイバーを介して受光する受光信号を比較判定する演算回路と、該演算回路により検出体があると判定された場合に検出信号を出力する出力部とを有して構成した、
ことを特徴とするウェハ検出用センサ。
A wafer detection sensor for detecting the presence or absence of the wafer by detecting a change in the amount of light received by the wafer blocking the light beam,
Comprises a light projecting unit you emitting the light beam, a sensor unit and a light receiving portion for receiving the light beams from the detection area, and a re Furekuta that reflects it to the incident light the light beam And
The sensor unit is held by a sensor main body constituting a sensor side holding body, and a light projecting side optical fiber insertion hole portion and a light receiving side optical fiber insertion hole portion along the axial direction are formed in the sensor main body in parallel. In addition, on one side surface of the sensor body, the light is reflected from the light projecting port and the reflector side that emits the light beam of the light projecting unit to the reflector side along a direction perpendicular to the axial direction of the sensor body. A light receiving port portion through which a light beam is incident, the light projecting port portion being orthogonal to the light projecting side optical fiber insertion hole portion, and the light receiving port portion being directed to the light receiving side optical fiber insertion hole portion. ,
Furthermore, the sensor unit is connected to the amplifier unit via a light-projecting optical fiber inserted into the light-projecting optical fiber insertion hole and a light-receiving optical fiber inserted into the light-receiving optical fiber insertion hole,
The amplifier unit includes: a light projecting circuit for projecting the light projecting unit via the light projecting side optical fiber; an arithmetic circuit for comparing and determining a light receiving signal received through the light receiving side optical fiber; An output unit that outputs a detection signal when it is determined that
A wafer detection sensor.
JP2009014769A 2009-01-26 2009-01-26 Wafer detection sensor Expired - Lifetime JP4835701B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009014769A JP4835701B2 (en) 2009-01-26 2009-01-26 Wafer detection sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009014769A JP4835701B2 (en) 2009-01-26 2009-01-26 Wafer detection sensor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2001085396A Division JP4277458B2 (en) 2001-03-23 2001-03-23 Wafer detection sensor

Publications (3)

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JP2009135514A JP2009135514A (en) 2009-06-18
JP2009135514A5 true JP2009135514A5 (en) 2009-10-08
JP4835701B2 JP4835701B2 (en) 2011-12-14

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Family Applications (1)

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9929034B2 (en) * 2015-09-03 2018-03-27 Kawasaki Jukogyo Kabushiki Kaisha Substrate transfer device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06338558A (en) * 1993-05-28 1994-12-06 Tel Varian Ltd Detector and processing device
JP3249309B2 (en) * 1994-09-13 2002-01-21 東京エレクトロン株式会社 Substrate transfer apparatus, substrate transfer method, and coating and developing processing apparatus
AU6419798A (en) * 1997-03-19 1998-10-12 Omron Corporation Transmitting photoelectric sensor array
JP2874028B2 (en) * 1997-05-23 1999-03-24 竹中電子工業株式会社 Wafer sensor
JP3380147B2 (en) * 1997-11-13 2003-02-24 大日本スクリーン製造株式会社 Substrate processing equipment
JPH11204827A (en) * 1998-01-13 1999-07-30 Sharp Corp Photo coupler
JP2000223555A (en) * 1999-01-29 2000-08-11 Kokusai Electric Co Ltd Substrate treating system

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