JP2009131911A - Manufacturing method of sealed device, and sealed device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for efficiently manufacturing a sealed device constituted by containing a device in a closed space with high airtightness regardless of constituent materials of members joined through bonding films; and a highly reliable sealed device manufactured by the manufacturing method of the sealed device. <P>SOLUTION: An actuator 1 comprises a substrate 2 having a vibration system of two degrees of freedom, and supports 3, 4. The substrate (a second structure) 2 is joined to the support (a base material) 3 through a joint film 81, and the substrate 2 is joined to the support (the base material) 4 through a joint film 82. The respective joint films 81, 82 include a Si skeleton having a random atomic structure including a siloxane bond, and an elimination group bonded to the Si skeleton. By giving them energy, the elimination group desorbs from the Si skeleton, so that adhesivity is developed in the respective joint films 81, 82, with which the substrate 2 is joined to the support 3, and the substrate 2 is joined to the support 4. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a sealed device and a sealed device.

For example, as an optical scanner for performing drawing by optical scanning with a laser printer or the like, an optical scanner using an actuator composed of a torsional vibrator is known (for example, see Patent Document 1).
Patent Document 1 discloses a base having a two-degree-of-freedom vibration system including a first vibration system and a second vibration system coupled thereto, a bottom member and a lid member for supporting the base, and two degrees of freedom. An actuator including a piezoelectric actuator that drives a vibration system is disclosed.
The second vibration system is provided with a light reflecting portion, and the first vibration system is rotationally driven by the driving force of the piezoelectric actuator, whereby the second vibration system is rotated. It drives and scans the light reflected by the light reflection part. Thereby, drawing can be performed by optical scanning.

In such an actuator, an airtight space is formed between the bottom member and the lid member, and a two-degree-of-freedom vibration system and a piezoelectric actuator are arranged in the airtight space.
The base is made of silicon, the bottom member and the lid member are made of glass, and the base, the bottom member, and the lid member are joined by anodic bonding. Thereby, a base | substrate, a bottom member, and a cover member can be joined simply and firmly.

Conventionally, when manufacturing such an actuator, after the piezoelectric actuator is bonded onto the base, the base is bonded to the bottom member and the lid member to obtain the actuator.
For this reason, there is a problem that the piezoelectric actuator reaches a depolarization temperature or higher due to the heat during the anodic bonding and depolarizes, leading to a decrease in driving force of the piezoelectric actuator.

On the other hand, if the treatment temperature of the anodic bonding between the base and the bottom member or the lid member is suppressed in order to prevent depolarization of the piezoelectric actuator, the bonding strength between the base and the bottom member and the lid member may be reduced. is there.
In addition, if a piezoelectric actuator composed of a material with a relatively high depolarization temperature is used, the range of selection of the constituent material of the piezoelectric actuator is narrowed, the design freedom of the actuator is reduced, and desired characteristics are obtained. It will not be possible.

  Furthermore, in order to join each part by anodic bonding, there are restrictions on the constituent materials of each part, and in addition to narrowing the selection range, the smoothness of the joining surface must be high. That is, when the smoothness of the joint surface is low, the airtightness of the airtight space is impaired. If airtightness is impaired in this way, outside air may enter the airtight space, and the two-degree-of-freedom vibration system and the piezoelectric actuator arranged in the airtight space may be deteriorated by the outside air or moisture contained therein. There is.

On the other hand, the base, the bottom member, and the lid member are also bonded using an adhesive.
However, since it is extremely difficult to supply the adhesive with a uniform thickness, the dimensional accuracy of each gap (gap) between the base, the bottom member, and the lid member is lowered. For this reason, the characteristics of the actuator are deteriorated.
Another problem is that the airtightness of the airtight space cannot be maintained because the adhesive has low airtightness.
Such a problem is similarly concerned not only in the actuator but also in other sealed devices having an airtight structure such as a crystal resonator, a surface acoustic wave device, and an acceleration sensor.

JP 2005-279863 A

  An object of the present invention is to provide a sealed device that can efficiently manufacture a sealed device in which a device is housed in a closed space with excellent airtightness, regardless of the constituent materials of members to be bonded via a bonding film. And a highly reliable sealed device manufactured by such a sealed device manufacturing method.

Such an object is achieved by the present invention described below.
The sealing device manufacturing method of the present invention is bonded to a base material, a Si skeleton provided on the base material having a random atomic structure including a siloxane (Si-O) bond, and the Si skeleton. A first structure including a bonding film including a leaving group, and a second structure capable of forming a closed space inside by being bonded to the first structure via the bonding film And preparing a device to be stored in the closed space;
A step of desorbing the leaving group from the Si skeleton by applying energy to the bonding film, and exhibiting adhesiveness in the bonding film;
The first structure and the second structure are bonded together so that the bonding film and the surface of the second structure are in close contact, and the closed space in which the device is stored is hermetically sealed. And a step of stopping.
As a result, it is possible to efficiently manufacture a sealed device in which the device is housed in a closed space with excellent airtightness regardless of the constituent materials of the members bonded via the bonding film.

The sealing device manufacturing method of the present invention is bonded to a base material, a Si skeleton provided on the base material having a random atomic structure including a siloxane (Si-O) bond, and the Si skeleton. A first structure including a bonding film including a leaving group, and a second structure capable of forming a closed space inside by being bonded to the first structure via the bonding film And preparing a device to be stored in the closed space;
The temporary structure having the closed space in which the device is accommodated by superimposing the first structure and the second structure so that the bonding film and the surface of the second structure are in close contact with each other. Obtaining a joined body; and
By applying energy to the bonding film in the temporary bonded body, the leaving group is desorbed from the Si skeleton, and the bonding film is made to exhibit adhesiveness. Joining the second structure and hermetically sealing the closed space.

  As a result, it is possible to efficiently manufacture a sealed device in which the device is housed in a closed space with excellent airtightness regardless of the constituent materials of the members bonded via the bonding film. Moreover, since the first structure body and the second structure body are not yet joined in the temporary joined body state, their relative positions can be easily adjusted (shifted). Accordingly, once the temporary joined body is obtained, the relative position between the first structure and the second structure is finely adjusted, thereby reliably increasing the assembly accuracy (dimensional accuracy) of the sealed device. Can do.

In the manufacturing method of the encapsulated device of the present invention, among the atoms obtained by removing H atoms from all atoms constituting the bonding film, the total content of Si atoms and O atoms is 10 to 90 atomic%. It is preferable that
Thus, in the bonding film, Si atoms and O atoms form a strong network, and the bonding film itself becomes stronger. For this reason, the bonding film can further increase the bonding strength of the bonding portion.
In the manufacturing method of the sealed device of the present invention, the abundance ratio of Si atoms and O atoms in the bonding film is preferably 3: 7 to 7: 3.
As a result, the stability of the bonding film is increased and each part can be bonded more firmly.

In the sealed device manufacturing method of the present invention, the crystallinity of the Si skeleton is preferably 45% or less.
As a result, the Si skeleton includes a sufficiently random atomic structure. For this reason, the characteristics of the Si skeleton such as chemical stability and heat resistance become obvious, and the dimensional accuracy and adhesiveness of the bonding film become more excellent.

In the method for producing a sealed device of the present invention, the leaving group is an H atom, a B atom, a C atom, an N atom, an O atom, a P atom, an S atom, a halogen atom, or each of these atoms. It is preferably composed of at least one selected from the group consisting of atomic groups arranged so as to be bonded to the Si skeleton.
These leaving groups are relatively excellent in binding / leaving selectivity by applying energy. For this reason, such a leaving group can make the adhesiveness of the bonding film higher.
In the sealed device manufacturing method of the present invention, the leaving group is preferably an alkyl group.
Since the alkyl group has high chemical stability, the bonding film containing the alkyl group as a leaving group is excellent in weather resistance and chemical resistance.

In the manufacturing method of the sealed device of the present invention, the bonding film is preferably formed by a plasma polymerization method.
Thereby, the bonding film becomes dense and homogeneous. Then, the bonding film can be bonded between the portions to be bonded particularly firmly and with high airtightness. In addition, the bonding film that is manufactured by the plasma polymerization method and has not been applied with energy can maintain the activated state to which energy has been applied over a relatively long time. For this reason, simplification and efficiency improvement of the manufacturing process of the encapsulated device can be achieved.

In the sealed device manufacturing method of the present invention, the bonding film is preferably composed of polyorganosiloxane as a main material.
As a result, the bonding film itself has excellent mechanical properties. In addition, a bonding film exhibiting particularly excellent adhesion to many materials can be obtained. Therefore, the bonding films can bond the portions to be bonded more firmly. Further, the bonding film can easily and reliably control the non-adhesiveness and the adhesiveness.
In the method for producing a sealed device of the present invention, it is preferable that the polyorganosiloxane is mainly composed of a polymer of octamethyltrisiloxane.
Thereby, a bonding film having particularly excellent adhesiveness can be obtained.

In the manufacturing method of the sealed device of the present invention, the average thickness of the bonding film is preferably 1 to 1000 nm.
Thereby, these can be joined more firmly, preventing the dimensional accuracy and transparency (translucency) between each part joined, falling significantly. Moreover, the height of the unevenness generated on the surface of the bonding film can be reduced, and the adhesion to the adherend can be further increased.

The manufacturing method of the encapsulated device of the present invention includes a base material, a metal atom provided on the base material, an oxygen atom bonded to the metal atom, and at least one of the metal atom and the oxygen atom. A first structure including a bonding film including a leaving group to be bonded; and a second structure capable of forming a closed space inside by being bonded to the first structure via the bonding film. Preparing a structure and a device housed in the closed space;
Applying energy to the bonding film to desorb the leaving group from at least one of the metal atom and the oxygen atom, and exhibit adhesiveness in the bonding film;
The first structure and the second structure are bonded together so that the bonding film and the surface of the second structure are in close contact, and the closed space in which the device is stored is hermetically sealed. And a step of stopping.

  As a result, it is possible to efficiently manufacture a sealed device in which the device is housed in a closed space with excellent airtightness regardless of the constituent materials of the members bonded via the bonding film. In addition, the bonding film has a function of hermetically sealing between the first structure and the second structure, and includes a device housed in a closed space provided inside the sealed device and the outside. It has the function of ensuring conduction between the two. Thereby, electric power and various control signals can be exchanged between the device and the outside via the bonding film. As a result, high integration and miniaturization of the sealed device can be realized, and leakage of the sealed portion due to the arrangement of the power line and the signal line can be prevented.

A manufacturing method of a sealed device of the present invention includes a first structure including a base material, and a bonding film provided on the base material and including a metal atom and a leaving group composed of an organic component. A body, a second structure capable of forming a closed space inside by being bonded to the first structure via the bonding film, and a device housed in the closed space When,
A step of desorbing the leaving group from the bonding film by applying energy to the bonding film, and causing the bonding film to exhibit adhesiveness;
The first structure and the second structure are bonded together so that the bonding film and the surface of the second structure are in close contact, and the closed space in which the device is stored is hermetically sealed. And a step of stopping.

  As a result, it is possible to efficiently manufacture a sealed device in which the device is housed in a closed space with excellent airtightness regardless of the constituent materials of the members bonded via the bonding film. In addition, the bonding film has a function of hermetically sealing between the first structure and the second structure, and includes a device housed in a closed space provided inside the sealed device and the outside. It has the function of ensuring conduction between the two.

In the manufacturing method of the sealed device of the present invention, it is preferable that the bonding film is a solid having no fluidity.
As a result, a sealed device having a much higher dimensional accuracy than the conventional one can be obtained. Further, since the time required for curing the adhesive is not required, strong bonding can be achieved in a short time.
In the method for manufacturing a sealed device of the present invention, it is preferable that a surface of the base material provided with the bonding surface is previously subjected to a surface treatment for improving adhesion with the bonding film.
As a result, the bonding strength between the base material and the bonding film can be further increased, and finally the bonding strength between the first structure and the second structure can be increased.

In the sealed device manufacturing method of the present invention, the surface treatment is preferably plasma treatment.
Thereby, in order to form a joining film | membrane, the surface of a base material can be optimized especially.
In the manufacturing method of the sealed device of the present invention, it is preferable that an intermediate layer is provided between the base material and the bonding film.
Thereby, a highly reliable sealed device can be obtained.
In the method for manufacturing a sealed device of the present invention, the intermediate layer is preferably composed of an oxide-based material as a main material.
Thereby, the joint strength between the base material and the joining film can be particularly increased.

In the manufacturing method of the sealed device of the present invention, the energy is applied by a method of irradiating the bonding film with energy rays, a method of heating the bonding film, and a method of applying a compressive force to the bonding film. It is preferable to carry out by at least one method.
Thereby, energy can be imparted to the bonding film relatively easily and efficiently.

In the manufacturing method of the sealed device of the present invention, it is preferable that the energy ray is an ultraviolet ray having a wavelength of 126 to 300 nm.
As a result, the amount of energy applied is optimized, and the bond between the Si skeleton and the leaving group is selectively cut while preventing the Si skeleton in the bonding film from being destroyed more than necessary. can do. As a result, it is possible to develop adhesiveness between the joints while preventing the characteristics (mechanical characteristics, chemical characteristics, etc.) of the joining film from deteriorating.

In the sealed device manufacturing method of the present invention, the heating temperature is preferably 25 to 100 ° C.
As a result, it is possible to reliably increase the bonding strength while reliably preventing the sealed device from being altered or deteriorated by heat.
In the manufacturing method of the sealed device of the present invention, the compressive force is preferably 0.2 to 10 MPa.
As a result, it is possible to easily apply an appropriate energy to the bonding film simply by applying a compressive force while preventing the substrate from being damaged due to the pressure being too high. Adhesiveness sufficient for the film is developed.

In the sealed device manufacturing method of the present invention, the closed space is preferably hermetically sealed under reduced pressure or in the presence of an inert gas.
This allows the device to be placed under reduced pressure or in the presence of an inert gas for an extended period of time. As a result, almost no oxygen, moisture, etc. exist in the closed space in which the device is stored, so that the device can be reliably prevented from being altered or deteriorated, and a highly reliable sealed device can be obtained. Can do.

In the sealed device manufacturing method of the present invention, the pressure under the reduced pressure is preferably 1 × 10 ⁻³ to 1 × 10 ³ Pa.
Thereby, oxygen, moisture, etc. hardly exist in the closed space while reliably preventing damage to the closed space due to excessive decompression. In addition, the air resistance in driving the device can be sufficiently reduced.

In the manufacturing method of the sealed device of the present invention, it is preferable that the surface of the second structure is subjected to a surface treatment that improves adhesion with the bonding film.
Thereby, the region in contact with the bonding film of the second structure is cleaned and activated, and the bonding film is likely to act chemically. As a result, the bonding strength between the second structure and the bonding film can be further increased.

In the method for producing an encapsulated device of the present invention, the surface of the second structure is at least one selected from the group consisting of a functional group, a radical, a ring-opening molecule, an unsaturated bond, a halogen, and a peroxide. It is preferably composed of a group or substance.
Thereby, the bonding strength between the second structure and the bonding film can be sufficiently increased without performing surface treatment on the second structure.

In the sealed device manufacturing method of the present invention, the second structure has a bonding film similar to the bonding film,
It is preferable that the first structure is bonded to the second structure so that the bonding films are in close contact with each other.
Thereby, irrespective of each constituent material of the first structure body and the second structure body, the bonding strength can be particularly increased.
In the sealed device manufacturing method of the present invention, the method further includes the step of performing a process of increasing the bonding strength between the first structure and the second structure after the closed space is hermetically sealed. Is preferred.
Thereby, the further improvement of the joint strength of a sealing type device can be aimed at.

In the method for manufacturing a sealed device of the present invention, the process of increasing the bonding strength includes heating the sealed device formed by bonding the first structure and the second structure. And at least one method of applying a compressive force to the sealed device.
Thereby, the further improvement of the joint strength of a sealing type device can be aimed at easily.

The sealed device of the present invention is manufactured by the method for manufacturing a sealed device of the present invention.
Thereby, a sealed device in which the device is housed in a closed space with excellent confidentiality can be obtained.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of a sealed device and a manufacturing method thereof according to the invention will be described with reference to the accompanying drawings.
<First Embodiment>
First, a first embodiment of a sealed device of the present invention will be described. Here, an actuator will be described as an example of the sealed device of the present invention.
1 is a plan view (internal perspective view) showing a first embodiment of an actuator as an example of a sealed device of the present invention, FIG. 2 is a cross-sectional view taken along line AA in FIG. 1, and FIG. FIG. 4 is a diagram showing an example of an AC voltage to be applied, and FIG. 5 is a diagram showing the frequency of the applied AC voltage, the first mass part, and the second mass. It is a graph which shows the resonance curve of a mass part. In the following, for convenience of explanation, the front side of the page in FIGS. 1 and 3 is referred to as “up”, the back side of the page is referred to as “down”, the right side is referred to as “right”, and the left side is referred to as “left”. The upper side is called “upper”, the lower side is called “lower”, the right side is called “right”, and the left side is called “left”.

As shown in FIG. 1 or 2, the actuator 1 includes a base body 2 having a two-degree-of-freedom vibration system, supports 3 and 4 that support the base body 2, and a piezoelectric body for driving the two-degree-of-freedom vibration system. 32.
In such an actuator 1, the base body 2 and the support body (base material) 3 are bonded via the bonding film 81, and the base body 2 and the support body (base material) 4 are bonded via the bonding film 82. Are joined. In addition, a space is formed between the base 2 and the supports 3 and 4 so as to allow driving of a two-degree-of-freedom vibration system (device) that is a movable part. 2 and the support 3. The base body 2 and the supports 3 and 4 joined via the joining films 81 and 82 constitute a container that houses the two-degree-of-freedom vibration system in the airtight space inside.

Here, each of the bonding films 81 and 82 includes a Si skeleton having a random atomic structure including a siloxane (Si—O) bond and a leaving group bonded to the Si skeleton before energy application. .
Each of the bonding films 81 and 82 is provided with energy so that the leaving group is released from the Si skeleton, and the adhesiveness developed on the surface of the bonding film 81 thereby causes the base 2 and the support 3 to be separated. And between the substrate 2 and the support 4.

Each of the bonding films 81 and 82 is a strong film that is not easily deformed by the influence of the Si skeleton 301 including the siloxane bond 302 and having a random atomic structure. The bonding films 81 and 82 having such a structure can obtain a sufficient bonding strength even if the thickness is reduced. Moreover, according to each bonding film 81 and 82, it can join reliably, maintaining the airtightness between these irrespective of the constituent material of the base | substrate 2 or the support bodies 3 and 4. FIG. As a result, a highly reliable actuator 1 that reliably prevents the entry of outside air and foreign matter can be obtained.
The bonding films 81 and 82 will be described later in detail.

Hereinafter, each part which comprises the actuator 1 is demonstrated in detail sequentially.
The base 2 includes a pair of first mass parts 21, 22, a second mass part 23 provided therebetween, and a frame-shaped support part 24 surrounding these mass parts.
Specifically, the base body 2 is provided with a first mass portion 21 on one end side (left side in FIGS. 1 and 2) around the second mass portion 23 and on the other end side (FIG. 1 and FIG. 2). The first mass unit 22 is provided on the right side in FIG.
In the present embodiment, the first mass parts 21 and 22 have substantially the same shape and the same dimensions as each other, and are provided substantially symmetrically via the second mass part 23.

A light reflecting portion 231 having light reflectivity is provided on the upper surface of the second mass portion 23 (the surface on the support 4 side described later). Thereby, the actuator 1 can be applied to an optical device such as an optical scanner, an optical switch, or an optical attenuator. That is, an inexpensive optical device that can be driven at a low voltage and has high reliability can be obtained.
Further, as shown in FIGS. 1 and 2, the base body 2 includes a pair of first elastic connecting portions 25 and 25 that connect the first mass portions 21 and 22 and the support portion 24, and a first mass portion. 21 and 22 and the second mass part 23 are provided with a pair of second elastic connection parts 26 and 26.

The first elastic connecting portions 25, 25 and the second elastic connecting portions 26, 26 are provided coaxially, and the first mass portion 21 is set with the rotation central axis (rotating shaft) 27 as a center axis. , 22 can rotate with respect to the support portion 24, and the second mass portion 23 can rotate with respect to the first mass portions 21, 22.
As described above, the base 2 includes the first vibration system including the first mass portions 21 and 22 and the first elastic coupling portions 25 and 25, the second mass portion 23 and the second elastic coupling portion 26. , 26 and a second vibration system.

Such a two-degree-of-freedom vibration system is formed thinner than the entire thickness of the base 2 and is located at the center of the base 2 in the vertical direction in FIG. In other words, the base 2 is formed with a portion thinner than the entire thickness of the base 2 (hereinafter referred to as a thin portion), and the first mass portion is formed by forming a deformed hole in the thin portion. 21 and 22, the 2nd mass part 23, the 1st elastic connection parts 25 and 25, and the 2nd elastic connection parts 26 and 26 are formed.
The thin portion is formed in the base 2 by providing the base 2 with a concave portion 28 opening upward and a concave portion 29 opening downward. In the present embodiment, the depth of the recess 28 and the depth of the recess 29 are substantially the same.

The constituent material of the base body 2 is not particularly limited, but is composed of silicon as a main material, and includes the first mass parts 21, 22, the second mass part 23, the support part 24, It is preferable that the first elastic connecting portions 25 and 25 and the second elastic connecting portions 26 and 26 are integrally formed. As a result, there are obtained effects that (1) the manufacturing process is reduced and the cost is reduced, (2) failure such as a crack can be avoided because it is an integral type, and (3) the design as an elastic body is facilitated. That is, when the constituent material of the base 2 is silicon, the vibration characteristics and durability of the obtained actuator 1 can be made excellent. Furthermore, (4) since silicon has a high affinity with the bonding films 81 and 82, the bonding strength between the substrate 2 and the supports 3 and 4 can be made particularly high.
The support 3 is bonded to the lower surface of the support portion 24 of the base 2, and the base 2 is supported by the support 3.

As shown in FIGS. 2 and 3, a recess 31 is formed on the upper surface of the support 3 at a portion corresponding to the second mass portion 23.
The recess 31 constitutes an escape portion that prevents the second mass portion 23 from contacting the support body 3 when the second mass portion 23 rotates (vibrates). By providing the concave portion (relief portion) 31, the deflection angle (amplitude) of the second mass portion 23 can be set larger while preventing the actuator 1 from being enlarged. In addition, when the depth of the recessed part 29 is large with respect to the deflection angle (amplitude) of the 2nd mass part 23, the recessed part 31 does not need to be provided.

The constituent material of the support 3 is not particularly limited. For example, the main material is metal, silicon, or glass, but it is preferable that the base material 2 be silicon. Thereby, the support body 3 has sufficient rigidity, the support body 3 is hard to bend, and can hold | maintain the outstanding dimensional accuracy.
In addition, on the upper surface of the support 3, as shown in FIG. 3, a pair of piezoelectric elements is formed so as to be substantially symmetrical with respect to the rotation center axis 27 in a plan view in a portion corresponding to the first mass portion 21. A body 32 is provided, and a pair of piezoelectric bodies 32 is provided in a portion corresponding to the first mass portion 22 so as to be substantially symmetric with respect to the rotation center axis 27 in plan view. In other words, in the present embodiment, two pairs (four in total) of the pair of piezoelectric bodies 32 are provided.

  Each piezoelectric body 32 is configured to expand and contract in the thickness direction (vertical direction in FIG. 2), and one end of the both ends in the expansion and contraction direction is the support 3 and the other end is the first. The mass parts 21 and 22 are joined (or abutted). Thus, when each piezoelectric body 32 is sandwiched between the base body 2 and the support body 3, the driving force of the piezoelectric body 32 can be efficiently transmitted to the first mass portions 21 and 22 while reducing the loss. Can do. As a result, the drive voltage of the actuator 1 can be reduced.

The constituent material of the piezoelectric body 32 (that is, a ferroelectric material described later) is not particularly limited. For example, zinc oxide, aluminum nitride, lithium tantalate, lithium niobate, potassium niobate, zirconate titanate. Lead oxide (PZT), barium titanate, and other various types can be used, and one or more of these can be used in combination. In particular, zinc oxide, aluminum nitride, lithium tantalate, Those mainly composed of at least one of lithium niobate, potassium niobate and lead zirconate titanate are preferred. As a constituent material of the piezoelectric body 32, for example, an organic ferroelectric material such as a copolymer of vinylidene fluoride and trifluoroethylene (P (VDF / TrFE)), a vinylidene fluoride polymer (PVDF), or the like is used. It can also be used.
Each piezoelectric body 32 is connected to a power source (not shown), and an alternating voltage (drive voltage) is applied to each piezoelectric body 32.
In the present embodiment, the device of the actuator 1 is constituted by the two-degree-of-freedom vibration system and the piezoelectric bodies 32 as described above.

On the other hand, the support 4 is joined to the upper surface of the support portion 24 of the base 2, and the base 2 is also supported by the support 4.
In the present embodiment, the support 4 has a function of causing external light to enter the light reflecting portion 231 and leading the reflected light from the light reflecting portion 231 to the outside. For this reason, it is preferable to use a substrate that is excellent in flatness and excellent in light transmittance as the support 4.
Moreover, as a constituent material of the support body 4, it is comprised with the material which has a light transmittance among the constituent materials of the support body 3 mentioned above from a viewpoint of having the said function.

In the actuator 1 of the present embodiment, as described above, the base body 2, the support body 3, and the support body 4 form an airtight space. Specifically, the recess 31 and the recesses 28 and 29 communicate with each other, and these form an airtight space. In such an airtight space, the first mass parts 21 and 22, the second mass part 23, the first elastic connection parts 25 and 25, and the second elastic connection parts 26 and 26 are arranged. . That is, the support bodies 3 and 4 are provided in a pair so as to hold the base 2 while allowing the second mass part 23 or the like that is a movable part to be driven, and between the pair of support bodies 3 and 4. An airtight space for accommodating the movable part is formed.
With such a configuration, the reliability of the actuator 1 can be further improved.

More specifically, I: It is easy to secure a space where the first mass parts 21 and 22 and the second mass part 23 can vibrate.
II: Foreign matter such as dust can be prevented from entering the actuator 1 (in the airtight space). III: The first mass parts 21 and 22 and the second mass part 23 vibrate (rotate) when the inside of the actuator 1 (in the airtight space) is in a reduced pressure state or filled with an inert gas or the like. ), The air resistance generated at the time is reduced, and vibration (rotation) at a larger angle with low energy becomes possible. As a result, the actuator 1 can be made highly reliable.

The actuator 1 having the above configuration is driven as follows.
For example, a sine wave (AC voltage) or the like is applied between each piezoelectric body 32. Specifically, for example, a voltage having a waveform as shown in FIG. 4A is applied to the upper two piezoelectric bodies 32 in FIG. 3, and the lower two piezoelectric bodies 32 in FIG. A voltage having a waveform as shown in (b) is applied.
Then, the first mass portions 21 and 22 vibrate so as to be inclined with respect to the plate surface of the base 2 (the paper surface in FIG. 1) about the rotation center shaft 27 (first elastic coupling portion 25). Rotate).

The second mass portion 23 connected via the second elastic connecting portion 26 with the vibration (drive) of the first mass portions 21 and 22 is also connected to the rotation center shaft 27 (second The elastic coupling portion 26) is vibrated (rotated) so as to be inclined with respect to the plate surface of the base 2 (the paper surface in FIG. 1).
Here, in the actuator 1, as described above, the concave portion 31 is formed in the portion of the support 3 corresponding to the second mass portion 23, and the concave portion 29 is formed on the lower surface of the base 2 in FIG. 2. A concave portion 28 is formed on the upper surface, and the first mass portions 21 and 22 are provided in the concave portions 28 and 29 in a plan view.

With such a configuration, a large space is secured as a space where the second mass portion 23 can vibrate and a space where the first mass portions 21 and 22 can vibrate. Accordingly, by setting the masses of the first mass parts 21 and 22 to be relatively small, the first mass parts 21 and 22 are vibrated with a large deflection angle, or the second mass part 23 is further resonant. Thus, even when the vibrator vibrates with a large deflection angle, it is possible to suitably prevent the respective mass parts 21, 22, 23 (two-degree-of-freedom vibration system) from contacting the support 3 and the support 4.
For this reason, when such an actuator 1 is applied to, for example, an optical scanner, scanning with higher resolution can be performed.

Here, the length of a direction substantially perpendicular to the rotational axis of the first mass portion 21 (longitudinal direction) (the distance between the rotational axis and the end portion 21a) and L _1, the substantially perpendicular from the rotation center axis of the mass portion 22 to the length of the (longitudinal) (distance between the rotational axis and the end portion 22a) and L _2, second mass when the length of the 23 central axis of rotation of the direction substantially perpendicular thereto (the distance between the rotational axis and the end portion 23a) and the L _3, in the present embodiment, the first mass portion 21 , 22 are provided independently of each other, the first mass parts 21, 22 and the second mass part 23 do not interfere with each other, and the size (length L _{3) of} the second mass part 23 is not affected. ), L ₁ and L ₂ can be made small. Thereby, the rotation angle (swing angle) of the 1st mass parts 21 and 22 can be enlarged, and the rotation angle of the 2nd mass part 23 can be enlarged.
Further, by reducing L ₁ and L ₂ , the distance between the first mass parts 21 and 22 and each piezoelectric body 32 can be reduced, thereby increasing the electrostatic force, The AC voltage applied to the mass parts 21 and 22 and each piezoelectric body 32 can be reduced.

Here, the dimension of the first mass portions 21 and 22 and the second mass 23 is set _{respectively,} L 1 _{<L 3} and to satisfy _L 2 _{<L 3} becomes relevant. Thus, it is possible to further reduce the L ₁ and L _2, it is possible to the rotation angle of the first mass portions 21 and 22 to further increase, to further increase the rotation angle of the second mass 23 it can.
In this case, it is preferable that the maximum rotation angle of the second mass unit 23 is configured to be 20 ° or more.
In addition, by reducing L ₁ and L ₂ in this way, the distance between the first mass parts 21 and 22 and each piezoelectric body 32 can be further reduced, and the first mass part 21, 22 and the AC voltage applied to each piezoelectric body 32 can be further reduced.

By these, the low voltage drive of the 1st mass parts 21 and 22 and the vibration (rotation) in the large rotation angle of the 2nd mass part 23 are realizable.
For this reason, when such an optical device is applied to an optical scanner used in an apparatus such as a laser printer or a scanning confocal laser microscope, the apparatus can be more easily downsized.
As described above, in the present embodiment, L ₁ and L ₂ are set to be substantially equal, but it goes without saying that L ₁ and L ₂ may be different.

By the way, in such a vibration system (two-degree-of-freedom vibration system) composed of the mass parts 21, 22, and 23, the amplitude (deflection angle) of the first mass part 21, 22 and the second mass part 23 is applied. A frequency characteristic as shown in FIG. 5 exists between the frequency of the AC voltage.
That is, the vibration system includes two resonance frequencies fm ₁ [kHz] and fm ₃ [kHz] (however, fm) in which the amplitude of the first mass parts 21 and 22 and the amplitude of the second mass part 23 are increased. ₁ <fm ₃ ) and one anti-resonance frequency fm ₂ [kHz] at which the amplitude of the first mass parts 21 and 22 is substantially zero.

In this vibration system, the frequency F of the alternating voltage applied between the first mass parts 21 and 22 and the piezoelectric body 32 is set to be approximately equal to the lower one of the two resonance frequencies, that is, fm _1. It is preferable to do this. Thereby, the deflection angle (rotation angle) of the second mass unit 23 can be increased while suppressing the amplitude of the first mass units 21 and 22.
In this specification, F [kHz] and fm ₁ [kHz] being substantially equal means that the condition of (fm ₁ −1) ≦ F ≦ (fm ₁ +1) is satisfied.

The average thicknesses of the first mass parts 21 and 22 are each preferably 1 to 1500 μm, and more preferably 10 to 300 μm.
The average thickness of the second mass part 23 is preferably 1 to 1500 μm, and more preferably 10 to 300 μm.
The spring constant k ₁ of the first elastic connecting portion 25 is preferably 1 × 10 ⁻⁴ to 1 × 10 ⁴ Nm / rad, and preferably 1 × 10 ⁻² to 1 × 10 ³ Nm / rad. More preferably, it is 1 × 10 ⁻¹ to 1 × 10 ² Nm / rad. Thereby, the rotation angle (swing angle) of the second mass unit 23 can be further increased.

On the other hand, the spring constant k ₂ of the second elastic coupling portion 26 is preferably 1 × 10 ⁻⁴ to 1 × 10 ⁴ Nm / rad, and preferably 1 × 10 ⁻² to 1 × 10 ³ Nm / rad. Is more preferably 1 × 10 ⁻¹ to 1 × 10 ² Nm / rad. Thereby, the deflection angle of the 2nd mass part 23 can be enlarged more, suppressing the deflection angle of the 1st mass parts 21 and 22. FIG.
Further, the spring constant _{k 1} of the first elastic connecting portions 25 and _{k 2} the spring constant of the second elastic connecting portions _26, preferably satisfies the k 1> _{k 2} the relationship. Thereby, it is possible to increase the rotation angle (deflection angle) of the second mass unit 23 while suppressing the deflection angle of the first mass units 21 and 22.

Furthermore, the moment of inertia of the first mass portions 21 and 22 and _{J 1,} when the moment of inertia of the second mass 23 has a _{J 2,} and _{J 1} and _{J 2,} the _{J 1} ≦ _{J 2} the relationship It is preferable to satisfy, and it is more preferable to satisfy the relationship of J ₁ <J ₂ . Thereby, it is possible to increase the rotation angle (deflection angle) of the second mass unit 23 while suppressing the deflection angle of the first mass units 21 and 22.

Incidentally, the natural frequency ω ₁ of the first vibration system composed of the first mass parts 21 and 22 and the first elastic coupling parts 25 and 25 is equal to the inertia moment J _{1 of} the first mass parts 21 and 22. And ω ₁ = (k ₁ / J ₁ ) ^1/2 by the spring constant k _{1 of} the first elastic coupling part 25. On the other hand, the natural frequency ω ₂ of the second vibration system composed of the second mass portion 23 and the second elastic coupling portions 26 and 26 is equal to the moment of inertia J _{2 of} the second mass portion 23 and the second According to the spring constant k ₂ of the elastic coupling part 26, ω ₂ = (k ₂ / J ₂ ) ^1/2 is given.

It is preferable that the natural frequency ω ₁ of the first vibration system and the natural frequency ω ₂ of the second vibration system obtained in this way satisfy the relationship ω ₁ > ω ₂ . Thereby, it is possible to increase the rotation angle (deflection angle) of the second mass unit 23 while suppressing the deflection angle of the first mass units 21 and 22.
Note that the vibration system according to the present embodiment is provided with a piezoresistive element in at least one of the pair of first elastic coupling portions 25 and the pair of second elastic coupling portions 26, for example, rotation angle and rotation. The frequency can be detected, and the detection result can be used for controlling the attitude of the second mass unit 23.

Here, the bonding films 81 and 82 will be described. In the present embodiment, since the configuration of the bonding film 81 and the configuration of the bonding film 82 are common, the bonding film 81 will be described below as a representative.
FIG. 6 is a partially enlarged view showing a state before applying energy of the bonding film included in the actuator according to the present embodiment, and FIG. 7 is a partial enlarged view showing a state after applying energy of the bonding film included in the actuator according to the present embodiment. FIG.

As shown in FIG. 6, the state before applying energy to the bonding film 81 includes a Si skeleton 301 including a siloxane (Si—O) bond 302 and a random atomic structure, and a debonding bonded to the Si skeleton 301. And a leaving group 303.
When energy is applied to the bonding film 81, as shown in FIG. 7, a part of the leaving group 303 is detached from the Si skeleton 301, and an active hand 304 is generated instead. Thereby, adhesiveness is developed on the surface of the bonding film 81. Thus, the base 2 and the support 3 are bonded together by the bonding film 81 exhibiting adhesiveness.
Even if such a bonding film 81 is thin, sufficient bonding strength can be obtained, so that it is possible to reliably prevent problems such as peeling between the bonded portions.

In addition, since the bonding film 81 can be manufactured by a method such as a vapor phase film forming method, the thickness can be strictly controlled, and the gap (the gap between each part (base 2 and support 3) to be bonded) The dimensional accuracy of the gap) can be increased.
Further, the bonding film 81 has low air permeability and high adhesion to each part to be bonded. For this reason, the joint location joined via the joining film 81 has excellent airtightness, and the airtightness of the airtight space constituted by the concave portion 31 and the concave portions 28 and 29 can be enhanced. Therefore, intrusion of outside air and foreign matter into the airtight space will be prevented, and the two-degree-of-freedom vibration system and the piezoelectric actuator arranged in the airtight space may be altered or deteriorated by the outside air or moisture contained therein. It is possible to prevent the foreign matter from obstructing the vibration of the two-degree-of-freedom vibration system.
Therefore, the reduced pressure state or the gas filling state can be stably maintained for a long time by reducing the pressure in the airtight space or filling a predetermined gas.

Further, the bonding film 81 is excellent in heat resistance due to the action of the chemically stable Si skeleton 301. For this reason, even if the actuator 1 is exposed to a high temperature, the bonding film 81 is hardly deteriorated or deteriorated. Therefore, it is possible to reliably prevent the occurrence of defects such as peeling at the joint location.
Further, such a bonding film 81 is a solid having no fluidity. For this reason, the thickness and shape of the adhesive layer (bonding film 81) hardly change compared to a conventional liquid or viscous liquid adhesive. For this reason, the dimensional accuracy of the actuator 1 manufactured using the bonding film 81 is remarkably higher than the conventional one. Thereby, the parallelism between the base | substrate 2 and the support body 3 can be maintained constant over a long term, for example, and the actuator 1 with high long-term reliability is obtained.
Moreover, the trouble of removing the protruding adhesive can be omitted.
Furthermore, since the time required for curing of the adhesive is not required, strong bonding can be achieved in a short time.

  As such a bonding film 81, among the atoms obtained by removing H atoms from all atoms constituting the bonding film 81, the total of the Si atom content and the O atom content is about 10 to 90 atomic%. It is preferable and it is more preferable that it is about 20-80 atomic%. If Si atoms and O atoms are contained in the above-mentioned range, the bonding film 81 forms a strong network of Si atoms and O atoms, and the bonding film 81 itself becomes stronger. . Therefore, according to the bonding film 81, the bonding strength of the bonding portion can be further increased.

The abundance ratio of Si atoms to O atoms in the bonding film 81 is preferably about 3: 7 to 7: 3, and more preferably about 4: 6 to 6: 4. By setting the abundance ratio of Si atoms and O atoms to be in the above range, the stability of the bonding film 81 is increased, and each part can be bonded more firmly.
The crystallinity of the Si skeleton 301 in the bonding film 81 is preferably 45% or less, and more preferably 40% or less. As a result, the Si skeleton 301 includes a sufficiently random atomic structure. For this reason, the characteristics of the Si skeleton 301 such as the above-described chemical stability and heat resistance become apparent, and the dimensional accuracy and adhesiveness of the bonding film 81 are further improved.

  Further, the leaving group 303 bonded to the Si skeleton 301 behaves so as to generate an active hand 304 in the bonding film 81 by detaching from the Si skeleton 301 as described above. Therefore, although the leaving group 303 is relatively easily and uniformly desorbed by being given energy, it is securely bonded to the Si skeleton 301 so as not to be desorbed when no energy is given. It needs to be a thing.

  From this point of view, the leaving group 303 includes an H atom, a B atom, a C atom, an N atom, an O atom, a P atom, an S atom, and a halogen atom, or each of these atoms. What consists of at least 1 sort (s) selected from the group which consists of an atomic group arrange | positioned so that it may couple | bond with frame | skeleton 301 is used preferably. Such a leaving group 303 is relatively excellent in bond / elimination selectivity by energy application. For this reason, such a leaving group 303 can sufficiently satisfy the above-described necessity, and the adhesiveness of the bonding film 81 can be made higher.

Examples of the atomic group (group) arranged so that each atom as described above is bonded to the Si skeleton 301 include, for example, an alkyl group such as a methyl group and an ethyl group, and an alkenyl group such as a vinyl group and an allyl group. Aldehyde group, ketone group, carboxyl group, amino group, amide group, nitro group, halogenated alkyl group, mercapto group, sulfonic acid group, cyano group, isocyanate group and the like.
Among these groups, the leaving group 303 is particularly preferably an alkyl group. Since the alkyl group has high chemical stability, the bonding film 81 containing the alkyl group has excellent weather resistance and chemical resistance.

Examples of the constituent material of the bonding film 81 having such characteristics include a polymer containing a siloxane bond such as polyorganosiloxane.
The bonding film 81 made of polyorganosiloxane itself has excellent mechanical properties. In addition, it exhibits particularly excellent adhesion to many materials. Therefore, the bonding film 81 made of polyorganosiloxane can bond the portions to be bonded more firmly.
Polyorganosiloxane usually exhibits water repellency (non-adhesiveness), but when given energy, it can easily desorb organic groups, changes to hydrophilicity, and exhibits adhesiveness. However, there is an advantage that the non-adhesiveness and the adhesiveness can be controlled easily and reliably.

Further, among polyorganosiloxanes, those mainly composed of a polymer of octamethyltrisiloxane are preferred. Since the bonding film 81 mainly composed of a polymer of octamethyltrisiloxane is particularly excellent in adhesiveness, it can be particularly suitably applied to the sealed device of the present invention. Moreover, since the raw material which has octamethyltrisiloxane as a main component is liquid at normal temperature and has an appropriate viscosity, there is also an advantage that it is easy to handle.
The average thickness of the bonding film 81 is preferably about 1 to 1000 nm, and more preferably about 2 to 800 nm. By making the average thickness of the bonding film 81 within the above-mentioned range, the dimensional accuracy and transparency (translucency) between the portions to be bonded are prevented from significantly decreasing, and these are bonded more firmly. be able to.

  That is, when the average thickness of the bonding film 81 is less than the lower limit value, there is a possibility that sufficient bonding strength cannot be obtained. On the other hand, when the average thickness of the bonding film 81 exceeds the upper limit, the dimensional accuracy and translucency (transparency) of the actuator 1 may be significantly reduced. As a result, there is a possibility that light is absorbed by the bonding film 82 in an actuator configured to transmit light through itself, such as the bonding film 82 shown in FIG.

Furthermore, if the average thickness of the bonding film 81 is within the above range, a certain degree of shape followability is ensured for the bonding film 81. For this reason, for example, even when unevenness is present on the bonding surface (surface adjacent to the bonding film 81) of the support 3, the bonding film follows the shape of the unevenness depending on the height of the unevenness. 81 can be deposited. As a result, the bonding film 81 can absorb the unevenness and reduce the height of the unevenness generated on the surface. And when the base | substrate 2 is bonded together with respect to the support body 3 provided with the joining film | membrane 81, these adhesiveness can be improved more.
Note that the degree of the shape followability as described above becomes more prominent as the bonding film 81 is thicker. Therefore, in order to sufficiently ensure the shape following property, the thickness of the bonding film 81 should be as large as possible.

Next, as an example of the manufacturing method of the sealed device of the present invention, the manufacturing method of the actuator 1 described above will be described with reference to FIGS.
8 to 11 are views (longitudinal sectional views) for explaining the manufacturing method of the actuator according to the first embodiment. In the following, for convenience of explanation, the upper side in FIGS. 8 to 11 is referred to as “upper” and the lower side is referred to as “lower”.

  The manufacturing method of the actuator 1 according to the present embodiment includes: [1] a support 3 (first structure) including a bonding film 81, a base 2 (second structure) having a first mass portion 23, and A preparation step of preparing the support body 4 (first structure) including the bonding film 82, [2] an energy applying step of applying energy to the bonding films 81 and 82, and [3] under reduced pressure or A joining step of laminating the support 3, the base 2 and the support 4 in this order in the presence of gas. Hereinafter, each process will be described sequentially.

[1] Preparation Step [1-1] Manufacture of Base 2 First, as shown in FIG. 8A, a substrate 5 for forming the base 2 is prepared.
The constituent material of the substrate 5 is the same as the constituent material of the base 2 described above.
And as shown in FIG.8 (b), a photoresist is apply | coated to both surfaces of the board | substrate 5, and exposure and image development are performed. Thereby, as shown in FIG. 8B, the resist mask 6 is formed so as to correspond to the shape of the support portion 24.

  Next, after etching both surfaces of the substrate 5 through the resist mask 6, the resist mask 6 is removed. As a result, as shown in FIG. 8C, a recess 51 is formed in a region other than the portion corresponding to the support portion 24. At that time, the etching may be performed simultaneously on both sides of the substrate 5 or may be performed on each side. In the case of etching the substrate 5 one side at a time, either the etching of one surface on the side where the metal mask 7 described later is formed or the etching of the other surface may be performed.

  As an etching method, for example, one or more of physical etching methods such as plasma etching, reactive ion etching, beam etching, and light-assisted etching, and chemical etching methods such as wet etching are used in combination. be able to. Note that the same method can be used for etching in the following steps.

Next, on one surface of the substrate 5, as shown in FIG. 8D, the metal mask 7 is made of, for example, aluminum so as to correspond to the shape of the support portion 24 and the mass portions 21, 22, and 23. Form.
Next, the one surface side of the substrate 5 is etched through the metal mask 7 until a portion corresponding to the recess 51 penetrates.

Then, after removing the metal mask 7, as shown in FIG. 8E, a metal film is formed on the second mass portion 23 to form a light reflecting portion 231.
Here, after the substrate 5 is etched, the metal mask 7 may be removed or may be left without being removed. When the metal mask 7 is not removed, the metal mask 7 remaining on the second mass portion 23 can be used as the light reflecting portion 231.

A method for forming the metal mask 7 (a method for forming a metal film) is not particularly limited, and examples thereof include dry plating methods such as vacuum deposition, sputtering (low temperature sputtering), and ion plating, electrolytic plating, and electroless plating. Examples include a wet plating method, a thermal spraying method, and a metal foil bonding. Note that the same method can also be used for forming a metal film in the following steps.
Through the above steps, as shown in FIG. 8E, a structure in which the respective mass portions 21, 22, 23 and the support portion 24 are integrally formed, that is, the base 2 is obtained.

[1-2] Production of Support 3 Next, as shown in FIG. 9A, a substrate 9 that is a glass substrate for forming the support 3 is prepared. As the substrate 9, a silicon substrate or a metal substrate can be used.
Then, a metal mask (not shown) is formed on one surface of the substrate 9 with aluminum or the like so as to correspond to a portion excluding the region where the recess 31 is formed.
Next, after etching one surface side of the substrate 9 through the metal mask, the metal mask is removed. Thereby, as shown in FIG.9 (b), the support body 3 in which the recessed part 31 was formed is obtained.

[1-3] Production of Bonding Film 81 Next, the bonding film 81 is formed on the support 3 as shown in FIG.
Hereinafter, a method for forming the bonding film 81 on the support 3 will be described.
Such a bonding film 81 may be produced by any method, and may be a film produced by various gas phase film formation methods such as plasma polymerization, CVD, PVD, or various liquid phase film formation methods. Although it can produce by giving energy, among these, it is preferable to use the film | membrane produced by the plasma polymerization method as a film | membrane before energy provision. According to the plasma polymerization method, finally, a dense and homogeneous bonding film 81 can be efficiently produced. As a result, the bonding film 81 manufactured by the plasma polymerization method can be bonded between the portions to be bonded with particularly strong and high airtightness. In addition, the bonding film 81 that is manufactured by the plasma polymerization method and has not been applied with energy can maintain a state in which energy is applied and activated for a relatively long time. For this reason, the manufacturing process of the actuator 1 can be simplified and improved in efficiency.

Here, a method for forming the bonding film 81 by the plasma polymerization method will be described in detail. Prior to the description of the method for forming the bonding film 81, a plasma polymerization apparatus used for manufacturing the bonding film 81 will be described. Thereafter, a method for forming the bonding film 81 will be described.
FIG. 12 is a longitudinal sectional view schematically showing a plasma polymerization apparatus. In the following description, the upper side in FIG. 12 is referred to as “upper” and the lower side is referred to as “lower”.

  A plasma polymerization apparatus 100 shown in FIG. 12 includes a chamber 101, a first electrode 130 that supports the support 3, a second electrode 140, and a power supply circuit 180 that applies a high-frequency voltage between the electrodes 130 and 140. A gas supply unit 190 that supplies gas into the chamber 101 and an exhaust pump 170 that exhausts the gas in the chamber 101 are provided. Among these parts, the first electrode 130 and the second electrode 140 are provided in the chamber 101. Hereinafter, each part will be described in detail.

The chamber 101 is a container that can keep the inside airtight, and is used with the inside being in a reduced pressure (vacuum) state. Therefore, the chamber 101 has pressure resistance that can withstand a pressure difference between the inside and the outside.
The chamber 101 shown in FIG. 12 has a substantially cylindrical chamber body whose axis is arranged along the horizontal direction, a circular side wall that seals the left opening of the chamber body, and a circle that seals the right opening. And side walls.

A supply port 103 is provided above the chamber 101, and an exhaust port 104 is provided below the chamber 101. A gas supply unit 190 is connected to the supply port 103, and an exhaust pump 170 is connected to the exhaust port 104.
In this embodiment, the chamber 101 is made of a highly conductive metal material and is electrically grounded via the ground wire 102.

The first electrode 130 has a plate shape and supports the support 3.
The first electrode 130 is provided on the inner wall surface of the side wall of the chamber 101 along the vertical direction, whereby the first electrode 130 is electrically grounded via the chamber 101. In addition, the 1st electrode 130 is provided concentrically with the chamber main body, as shown in FIG.

An electrostatic chuck (suction mechanism) 139 is provided on the surface of the first electrode 130 that supports the support 3.
As shown in FIG. 12, the electrostatic chuck 139 can support the support 3 along the vertical direction. Further, even if the support 3 has a slight warp, the support 3 can be subjected to a plasma treatment in a state where the warp is corrected by being attracted to the electrostatic chuck 139.

The second electrode 140 is provided to face the first electrode 130 with the support 3 interposed therebetween. Note that the second electrode 140 is provided in a state of being separated (insulated) from the inner wall surface of the side wall of the chamber 101.
A high frequency power source 182 is connected to the second electrode 140 via a wiring 184. A matching box (matching unit) 183 is provided in the middle of the wiring 184. The wiring 184, the high-frequency power source 182 and the matching box 183 constitute a power circuit 180.
According to such a power supply circuit 180, since the first electrode 130 is grounded, a high frequency voltage is applied between the first electrode 130 and the second electrode 140. As a result, an electric field whose direction is reversed at a high frequency is induced in the gap between the first electrode 130 and the second electrode 140.

The gas supply unit 190 supplies a predetermined gas into the chamber 101.
A gas supply unit 190 shown in FIG. 12 stores a liquid storage unit 191 that stores a liquid film material (raw material liquid), a vaporizer 192 that vaporizes the liquid film material to change it into a gaseous state, and stores a carrier gas. And a gas cylinder 193. Each of these parts and the supply port 103 of the chamber 101 are connected by a pipe 194, and a mixed gas of a gaseous film material (raw material gas) and a carrier gas is supplied from the supply port 103 into the chamber 101. It is configured to supply.

The liquid film material stored in the liquid storage unit 191 is a raw material that is polymerized by the plasma polymerization apparatus 100 to form a polymer film on the surface of the support 3.
Such a liquid film material is vaporized by the vaporizer 192 and is supplied into the chamber 101 as a gaseous film material (raw material gas). The source gas will be described in detail later.

The carrier gas stored in the gas cylinder 193 is a gas that is discharged due to the action of an electric field and introduced to maintain this discharge. Examples of such a carrier gas include Ar gas and He gas.
A diffusion plate 195 is provided near the supply port 103 in the chamber 101.
The diffusion plate 195 has a function of promoting the diffusion of the mixed gas supplied into the chamber 101. Thereby, the mixed gas can be dispersed in the chamber 101 with a substantially uniform concentration.

The exhaust pump 170 exhausts the inside of the chamber 101, and includes, for example, an oil rotary pump, a turbo molecular pump, or the like. Thus, by exhausting the chamber 101 and reducing the pressure, the gas can be easily converted into plasma. In addition, it is possible to prevent contamination and oxidation of the support 3 due to contact with the air atmosphere, and to effectively remove reaction products from the plasma treatment from the chamber 101.
The exhaust port 104 is provided with a pressure control mechanism 171 that adjusts the pressure in the chamber 101. Thereby, the pressure in the chamber 101 is appropriately set according to the operation state of the gas supply unit 160.

Next, a method for forming the bonding film 81 on the support 3 using such a plasma polymerization apparatus 100 will be described.
First, the support 3 is housed in the chamber 101 of the plasma polymerization apparatus 100 to be in a sealed state, and then the chamber 101 is depressurized by the operation of the exhaust pump 170.
Next, the gas supply unit 190 is operated to supply a mixed gas of the source gas and the carrier gas into the chamber 101. The supplied mixed gas is filled in the chamber 101.

Here, the proportion (mixing ratio) of the raw material gas in the mixed gas is slightly different depending on the kind of the raw material gas and the carrier gas, the target film forming speed, and the like. It is preferable to set to about -70%, and it is more preferable to set to about 30-60%. As a result, it is possible to optimize the conditions for formation (film formation) of the polymer film.
Further, the flow rate of the gas to be supplied is appropriately determined depending on the type of gas, the target film formation rate, the film thickness, etc., and is not particularly limited, but usually the flow rates of the source gas and the carrier gas are respectively , Preferably about 1 to 100 ccm, more preferably about 10 to 60 ccm.

  Next, the power supply circuit 180 is activated, and a high frequency voltage is applied between the pair of electrodes 130 and 140. As a result, gas molecules existing between the pair of electrodes 130 and 140 are ionized to generate plasma. Molecules in the raw material gas are polymerized by the energy of the plasma, and the polymer is deposited and deposited on the support 3. As a result, as shown in FIG. 9C, a bonding film 81 made of a plasma polymerized film is formed on the support 3.

Examples of the source gas include organosiloxanes such as methylsiloxane, octamethyltrisiloxane, decamethyltetrasiloxane, decamethylcyclopentasiloxane, octamethylcyclotetrasiloxane, and methylphenylsiloxane.
The plasma polymerized film obtained by using such a raw material gas, that is, the bonding film 81 is composed of a polymer obtained by polymerizing these raw materials, that is, a polyorganosiloxane.

In the plasma polymerization, the frequency of the high frequency applied between the pair of electrodes 130 and 140 is not particularly limited, but is preferably about 1 kHz to 100 MHz, and more preferably about 10 to 60 MHz.
Further, the power density of the high frequency is not particularly limited, and is preferably about 0.01 to 10 / cm ^2, more preferably about 0.1 to 1 W / cm ^2.

Further, the pressure in the chamber 101 during film formation is preferably about 133.3 × 10 ^{−5 to} 1333 Pa (1 × 10 ^{−5 to} 10 Torr), and 133.3 × 10 ^{−4 to} 133.3 Pa ( More preferably, it is about 1 × 10 ^{−4 to} 1 Torr).
The raw material gas flow rate is preferably about 0.5 to 200 sccm, and more preferably about 1 to 100 sccm. On the other hand, the carrier gas flow rate is preferably about 5 to 750 sccm, and more preferably about 10 to 500 sccm.

The treatment time is preferably about 1 to 10 minutes, more preferably about 4 to 7 minutes. Note that the thickness of the bonding film 81 formed is mainly proportional to the processing time. Therefore, the thickness of the bonding film 81 can be easily adjusted only by adjusting the processing time. For this reason, the distance between the support 3 and the base 2 can be strictly controlled.
Moreover, it is preferable that the temperature of the support body 3 is 25 degreeC or more, and it is more preferable that it is about 25-100 degreeC.

As described above, the bonding film 81 can be obtained, and a first structure including the support (base material) 3 and the bonding film 81 is obtained.
When the bonding film 81 is partially formed on the upper surface of the support 3, for example, a mask having a window having a shape corresponding to the region is used, and the bonding film 81 is formed on the mask. You can do it.

[1-3] Preparation of support body 4 Next, the support body 4 comprised with the glass substrate is prepared.
[1-4] Production of Bonding Film 82 Next, as shown in FIG. 10A, the bonding film 82 is formed on the lower surface of the support 4 in the same manner as the bonding film 81. Thereby, the 1st structure comprised by the support body (base material) 4 and the joining film | membrane 82 is obtained.

[2] Energy application step [2-1] Next, energy is applied to the bonding film 81 formed on the support 3.
When energy is applied, the leaving group 303 shown in FIG. 6 is detached from the Si skeleton 301 in the bonding film 81. Then, after the leaving group 303 is released, active hands 304 are generated on the surface and inside of the bonding film 81 as shown in FIG. Thereby, the adhesiveness with the base 2 is developed on the surface of the bonding film 81. Similarly, the bonding film 82 exhibits adhesiveness with the substrate 2.

Here, the energy applied to the bonding film 81 may be applied by any method. For example, (I) a method of irradiating the bonding film 81 with energy rays, (II) a method of heating the bonding film 81, (III ) Typical examples include a method of applying compressive force (applying physical energy) to the bonding film 81. In addition, a method of exposing to plasma (applying plasma energy), exposure to ozone gas (applying chemical energy) Method).
Among these, as a method for applying energy to the bonding film 81, it is particularly preferable to use at least one of the methods (I), (II), and (III). Since these methods can apply energy to the bonding film 81 relatively easily and efficiently, they are suitable as energy application methods.

Hereinafter, the methods (I), (II), and (III) will be described in detail.
(I) In the case of irradiating the bonding film 81 with energy rays, examples of the energy rays include light such as ultraviolet rays and laser light, particle rays such as X-rays, γ rays, electron beams, and ion beams, and the like. A combination of these energy rays.
Among these energy rays, it is particularly preferable to use ultraviolet rays having a wavelength of about 126 to 300 nm (see FIG. 9D). According to such ultraviolet rays, the amount of energy applied is optimized, so that the Si skeleton 301 in the bonding film 81 is prevented from being destroyed more than necessary, and between the Si skeleton 301 and the leaving group 303. Can be selectively cleaved. Thereby, adhesiveness can be expressed in the bonding film 81 while preventing the characteristics (mechanical characteristics, chemical characteristics, etc.) of the bonding film 81 from deteriorating.
In addition, since ultraviolet rays can be processed in a short time without unevenness, the leaving group 303 can be efficiently eliminated. Furthermore, ultraviolet rays also have the advantage that they can be generated with simple equipment such as UV lamps.
The wavelength of the ultraviolet light is more preferably about 126 to 200 nm.

In the case of using the UV lamp, the output may vary depending on the area of the bonding film 81 is preferably from ^1mW / cm ^{2 ~1W} / cm 2 or ^so, at 5mW / cm ² ~50mW / cm 2 of about More preferably. In this case, the distance between the UV lamp and the bonding film 81 is preferably about 3 to 3000 mm, and more preferably about 10 to 1000 mm.

  In addition, the time of irradiation with ultraviolet rays is a time that allows the leaving groups 303 near the surface of the bonding film 81 to be released, that is, a time that does not allow a large amount of the leaving groups 303 inside the bonding film 81 to be released. It is preferable to do this. Specifically, although it varies slightly depending on the amount of ultraviolet light, the constituent material of the bonding film 81, etc., it is preferably about 0.5 to 30 minutes, more preferably about 1 to 10 minutes.

Moreover, although an ultraviolet-ray may be irradiated continuously in time, you may irradiate intermittently (pulse form).
On the other hand, examples of the laser light include an excimer laser (femtosecond laser), an Nd-YAG laser, an Ar laser, a CO ₂ laser, and a He—Ne laser.

  Further, the irradiation of the energy beam to the bonding film 81 may be performed in any atmosphere. Specifically, the atmosphere, an oxidizing gas atmosphere such as oxygen, a reducing gas atmosphere such as hydrogen, nitrogen, An inert gas atmosphere such as argon, a reduced pressure (vacuum) atmosphere obtained by reducing these atmospheres, and the like can be given, and it is particularly preferable to perform in an air atmosphere. Thereby, it is not necessary to spend time and cost to control the atmosphere, and irradiation of energy rays can be performed more easily.

As described above, according to the method of irradiating the energy beam, it is possible to easily apply energy selectively to the bonding film 81. For example, alteration / deterioration of the support 3 due to application of energy is prevented. be able to.
Moreover, according to the method of irradiating energy rays, the magnitude of energy to be applied can be easily adjusted with high accuracy. For this reason, it is possible to adjust the desorption amount of the leaving group 303 desorbed from the bonding film 81. By adjusting the amount of elimination of the leaving group 303 in this way, the bonding strength between the bonding film 81 and the substrate 2 can be easily controlled.

That is, by increasing the amount of elimination of the leaving group 303, more active hands are generated on the surface and inside of the bonding film 81, so that the adhesiveness expressed in the bonding film 81 can be further improved. On the other hand, by reducing the amount of elimination of the leaving group 303, the number of active hands generated on the surface and inside of the bonding film 81 can be reduced, and the adhesiveness expressed in the bonding film 81 can be suppressed.
In addition, in order to adjust the magnitude | size of the energy to provide, what is necessary is just to adjust conditions, such as the kind of energy beam, the output of an energy beam, the irradiation time of an energy beam.
Furthermore, according to the method of irradiating energy rays, a large amount of energy can be applied in a short time, so that the energy can be applied more efficiently.

(II) When the bonding film 81 is heated (not shown), the heating temperature is preferably set to about 25 to 100 ° C., more preferably about 50 to 100 ° C. By heating at a temperature in such a range, it is possible to reliably activate the bonding film 81 while reliably preventing the support 3 and the like from being altered or deteriorated by heat.
Further, the heating time may be a time that can break the molecular bond of the bonding film 81. Specifically, it is preferably about 1 to 30 minutes if the heating temperature is within the above range.

The bonding film 81 may be heated by any method, but can be heated by various heating methods such as a method using a heater, a method of irradiating infrared rays, a method of contacting with a flame, and the like.
When the thermal expansion coefficients between the members to be bonded are substantially equal, the bonding film 81 may be heated under the above conditions. However, when these thermal expansion coefficients are different from each other, details will be given later. As described above, it is preferable to perform bonding at as low a temperature as possible. By performing the bonding at a low temperature, it is possible to further reduce the thermal stress generated at the bonding interface.

(III) When compressive force is applied to the bonding film 81 (not shown), it is preferable to apply a pressure of about 0.2 to 10 MPa, and it is more preferable to apply a pressure of about 1 to 5 MPa. Thereby, it is possible to easily apply an appropriate energy to the bonding film 81 simply by applying a compressive force while preventing the support 3 from being damaged due to the pressure being too high. Adhesiveness sufficient for the bonding film 81 is developed.
The time for applying the compressive force is not particularly limited, but is preferably about 10 seconds to 30 minutes. In addition, what is necessary is just to change suitably the time which provides compression force according to the magnitude | size of compression force. Specifically, the time for applying the compressive force can be shortened as the compressive force increases.

Energy can be imparted to the bonding film 81 by the methods (I), (II), and (III) as described above.
Note that energy may be applied to the entire surface of the bonding film 81, but may be applied to only a part of the region. In this way, it is possible to control the region where the adhesiveness of the bonding film 81 is expressed, and to reduce local concentration of stress generated at the bonding interface by appropriately adjusting the area, shape, etc. of this region. Can do. Thereby, for example, even when the difference in thermal expansion coefficient between the members to be joined is large, these can be reliably joined.

  Here, as described above, the bonding film 81 in a state before energy is applied has the Si skeleton 301 and the leaving group 303 as shown in FIG. When energy is applied to the bonding film 81, the leaving group 303 (in this embodiment, a methyl group) is detached from the Si skeleton 301. As a result, as shown in FIG. 7, active hands 304 are generated on the surface 35 of the bonding film 81 and activated. As a result, adhesiveness is developed on the surface of the bonding film 81.

  Here, “activate” the bonding film 81 means that the surface 35 of the bonding film 81 and the internal leaving group 303 are removed, and a bond not terminated in the Si skeleton 301 (hereinafter referred to as “unbonded”). It is also referred to as a “hand” or “dangling bond”), a state in which this unbonded hand is terminated by a hydroxyl group (OH group), or a state in which these states are mixed.

Therefore, the active hand 304 means a dangling bond (dangling bond) or a dangling bond terminated with a hydroxyl group. Such an active hand 304 enables particularly strong bonding to the adherend.
The latter state (state in which dangling bonds are terminated by a hydroxyl group) is obtained by, for example, irradiating the bonding film 81 with energy rays in the atmospheric air, so that moisture in the atmosphere terminates dangling bonds. Can be easily generated.

Next, a piezoelectric body 32 composed of a ferroelectric material as a main material is formed on the bonding film 81 formed on the support 3.
In the piezoelectric body 32, a ferroelectric film composed of a ferroelectric material as a main material is formed on the surface of the support 3 on which the recess 31 is formed. After etching through a mask corresponding to the shape of 32, it can be formed by removing the mask.

The method for forming the ferroelectric film is not particularly limited. For example, a physical vapor deposition method (PVD method) such as a vacuum deposition method, a sputtering method (low temperature sputtering), an ion plating method, a plasma CVD method, Chemical vapor deposition methods (CVD methods) such as thermal CVD methods, laser CVD methods, wet plating methods such as electrolytic plating, immersion plating, electroless plating, spin coating methods, solution atomization deposition methods (LSMCD methods), etc. It can be formed by various coating methods such as a solution coating method, a screen printing method, and an ink jet method, film bonding, and the like.
Note that the piezoelectric body 32 may be simply placed on the support 3.

In addition, the piezoelectric body 32 may be bonded to the support 3 via a bonding film 81 as shown in FIG. Thereby, the piezoelectric body 32 and the support body 3 can be firmly joined. In addition, since the thickness of the bonding film 81 can be strictly controlled, the accuracy of the separation distance between the piezoelectric body 32 and the support body 3 can be further increased. As a result, the piezoelectric body 32 can act on the first mass parts 21 and 22 as designed.
[2-2] Next, in the same manner as the bonding film 81, energy is applied to the bonding film 82 formed on the lower surface of the support 4 as shown in FIG.
When energy is applied, adhesiveness with the base 2 is developed on the surface of the bonding film 82.

[3] Joining process [3-1] Next, the substrate 2 prepared in the preparation process is prepared. Then, as shown in FIG. 10C, the support 3 and the substrate 2 are bonded together so that the bonding film 81 that exhibits adhesiveness and the substrate 2 are in close contact with each other. Thereby, as shown in FIG. 10D, the support 3 and the base 2 are bonded (adhered) via the bonding film 81.

Here, it is preferable that the thermal expansion coefficients of the base 2 and the support 3 to be joined as described above are substantially equal. If the coefficients of thermal expansion of the base 2 and the support 3 are substantially equal, when they are bonded together, it becomes difficult for stress associated with thermal expansion to occur at the bonding interface. As a result, it is possible to reliably prevent problems such as peeling in the finally obtained actuator 1.
Further, even when the thermal expansion coefficients of the base 2 and the support 3 are different from each other, the base 2 and the support 3 are firmly fixed with high dimensional accuracy by optimizing the conditions for bonding them as follows. Can be joined.
That is, when the thermal expansion coefficients of the base 2 and the support 3 are different from each other, it is preferable to perform bonding at as low a temperature as possible. By performing the bonding at a low temperature, it is possible to further reduce the thermal stress generated at the bonding interface.

  Specifically, although depending on the difference in thermal expansion coefficient between the base 2 and the support 3, it is preferable to bond them together in a state where the temperature of the base 2 and the support 3 is about 25 to 50 ° C. It is more preferable to bond together under the condition of about 25 to 40 ° C. Within such a temperature range, even if the difference in thermal expansion coefficient between the substrate 2 and the support 3 is large to some extent, the thermal stress generated at the bonding interface can be sufficiently reduced. As a result, it is possible to reliably prevent the actuator 1 from warping or peeling.

Further, in this case, when the difference in thermal expansion coefficient between the substrate 2 and the support 3 is 5 × 10 ⁻⁵ / K or more, the bonding is performed at the lowest possible temperature as described above. It is particularly recommended. Note that by using the bonding film 81, the base 2 and the support 3 can be firmly bonded even at a low temperature as described above.
The base 2 and the support 3 are preferably different in rigidity. Thereby, the base | substrate 2 and the support body 3 can be joined more firmly.
In addition, it is preferable to perform a surface treatment for improving adhesion to the bonding film 81 in advance in the region where the bonding film 81 of the support 3 is formed. Thereby, the bonding strength between the support 3 and the bonding film 81 can be further increased, and finally the bonding strength between the base 2 and the support 3 can be increased.

  Examples of the surface treatment include physical surface treatment such as sputtering treatment and blast treatment, plasma treatment using oxygen plasma, nitrogen plasma, etc., corona discharge treatment, etching treatment, electron beam irradiation treatment, ultraviolet irradiation treatment, ozone Examples include chemical surface treatment such as exposure treatment, or a combination of these. By performing such treatment, the region where the bonding film 81 of the support 3 is formed can be cleaned and the region can be activated.

In addition, by using plasma treatment among these surface treatments, the surface of the support 3 can be particularly optimized in order to form the bonding film 81.
In addition, especially when the support body 3 which performs surface treatment is comprised with the resin material (polymer material), corona discharge treatment, nitrogen plasma treatment, etc. are used suitably.
Further, depending on the constituent material of the support 3, there is a material in which the bonding strength of the bonding film 81 is sufficiently high without performing the surface treatment as described above. Examples of the constituent material of the support 3 that can obtain such an effect include materials mainly composed of various metal materials, various silicon materials, various glass materials, and the like.

The surface of the support 3 made of such a material is covered with an oxide film, and a relatively active hydroxyl group is bonded to the surface of the oxide film. Therefore, when the support 3 made of such a material is used, the support 3 and the bonding film 81 can be firmly adhered to each other without performing the surface treatment as described above.
In this case, the entire support 3 may not be made of the material as described above, and at least the vicinity of the surface of the region where the bonding film 81 is formed needs to be made of the material as described above. .

Furthermore, in the case where the region where the bonding film 81 of the support 3 is formed has the following groups and substances, the bonding strength between the support 3 and the bonding film 81 can be obtained without performing the above surface treatment. Can be made high enough.
Examples of such groups and substances include functional groups such as hydroxyl groups, thiol groups, carboxyl groups, amino groups, nitro groups, and imidazole groups, radicals, ring-opened molecules, double bonds, and triple bonds. And at least one group or substance selected from the group consisting of a saturated bond, a halogen such as F, Cl, Br, and I, and a peroxide.
Further, it is preferable to appropriately select and perform various surface treatments as described above so that a surface having such a material can be obtained.

Further, instead of the surface treatment, it is preferable to form an intermediate layer in advance in at least a region of the support 3 where the bonding film 81 is formed.
The intermediate layer may have any function, and for example, a layer having a function of improving adhesion to the bonding film 81, a cushioning function (buffer function), a function of reducing stress concentration, and the like are preferable. By forming the bonding film 81 on the support 3 through such an intermediate layer, the bonding strength between the support 3 and the bonding film 81 is increased, and a highly reliable bonded body, that is, the actuator 1 is obtained. Can do.

  Examples of the constituent material of the intermediate layer include metal materials such as aluminum and titanium, metal oxides, oxide materials such as silicon oxide, metal nitrides, and nitride materials such as silicon nitride. , Carbon-based materials such as graphite and diamond-like carbon, silane coupling agents, thiol-based compounds, metal alkoxides, self-assembled film materials such as metal-halogen compounds, etc., one or two of these A combination of more than one species can be used.

Further, among the intermediate layers formed of these materials, the intermediate layer formed of the oxide-based material can particularly increase the bonding strength between the support 3 and the bonding film 81.
On the other hand, it is preferable that a region of the substrate 2 that is in contact with the bonding film 81 is preliminarily subjected to a surface treatment for improving the adhesion with the bonding film 81. Thereby, the bonding strength between the base 2 and the bonding film 81 can be further increased.
For this surface treatment, the same treatment as the above-described surface treatment applied to the support 3 can be applied.

Further, as in the case of the support 3, depending on the constituent material of the base 2, there are cases where the adhesiveness with the bonding film 81 is sufficiently high without performing the surface treatment as described above. Examples of the constituent material of the base 2 that can obtain such an effect include materials mainly composed of various metal-based materials, various silicon-based materials, various glass-based materials and the like as described above.
That is, the surface of the base 2 made of such a material is covered with an oxide film, and a hydroxyl group is bonded to the surface of the oxide film. Therefore, by using the substrate 2 covered with such an oxide film, the bonding strength between the lower surface of the substrate 2 and the bonding film 81 can be increased without performing the surface treatment as described above.
In this case, the entire base 2 may not be made of the above material, and at least the vicinity of the lower surface may be made of the above material.
Further, when the lower surface of the substrate 2 has the following groups or substances, the bonding strength between the lower surface of the substrate 2 and the bonding film 81 can be sufficiently increased without performing the surface treatment as described above. it can.

Examples of such groups and substances include various functional groups such as hydroxyl group, thiol group, carboxyl group, amino group, nitro group, and imidazole group, various radicals, ring-opening molecules, double bonds, and triple bonds. At least one group or substance selected from the group consisting of a leaving intermediate molecule having an unsaturated bond, a halogen such as F, Cl, Br, and I, a peroxide, or the group is desorbed. An unterminated bond (an unbonded bond, a dangling bond) is provided.
Of these, the leaving intermediate molecule is preferably a ring-opening molecule or a hydrocarbon molecule having an unsaturated bond. Such hydrocarbon molecules act strongly on the bonding film 81 based on the remarkable reactivity of ring-opening molecules and unsaturated bonds. Therefore, the lower surface of the substrate 2 having such hydrocarbon molecules can be bonded to the bonding film 81 particularly firmly.

The functional group on the lower surface of the substrate 2 is particularly preferably a hydroxyl group. Thereby, the lower surface can be particularly easily and firmly bonded to the bonding film 81. In particular, when hydroxyl groups are exposed on the surface of the bonding film 81, the lower surface of the substrate 2 and the bonding film 81 can be firmly bonded in a short time based on hydrogen bonds generated between the hydroxyl groups. .
In addition, the substrate 2 that can be firmly bonded to the bonding film 81 is obtained by appropriately selecting various surface treatments as described above on the lower surface of the substrate 2 so as to have such groups and substances. can get.

Among these, it is preferable that a hydroxyl group exists on the lower surface of the substrate 2. On such a surface, a large attractive force based on the hydrogen bond is generated between the bonding film 81 where the hydroxyl group is exposed. Thereby, finally, the support body 3 and the base body 2 can be bonded particularly firmly.
Further, instead of the surface treatment, it is preferable to form an intermediate layer having a function of improving the adhesion with the bonding film 81 in advance in a region in contact with the bonding film 81 of the substrate 2. Thereby, the bonding strength between the base 2 and the bonding film 81 can be further increased.
As the constituent material of the intermediate layer, the same constituent material as that of the intermediate layer formed on the support 3 described above can be used.

Here, in this step, a mechanism in which the support 3 (first structure) including the bonding film 81 and the base 2 (second structure) are bonded will be described.
For example, a case where a hydroxyl group is exposed in a region of the substrate 2 that is used for bonding to the support 3 will be described as an example. In this step, the support is arranged so that the bonding film 81 and the substrate 2 are in contact with each other. When the substrate 3 and the substrate 2 are bonded together, the hydroxyl group present on the surface 35 of the bonding film 81 and the hydroxyl group present in the region of the substrate 2 are attracted to each other by hydrogen bonding, and an attractive force is generated between the hydroxyl groups. . It is assumed that the support 3 including the bonding film 81 and the base 2 are bonded to each other by this attractive force.
Further, the hydroxyl groups attracting each other by the hydrogen bond are cleaved from the surface with dehydration condensation depending on the temperature condition or the like. As a result, at the contact interface between the bonding film 81 and the substrate 2, the bonds in which the hydroxyl groups are bonded are bonded. Accordingly, it is presumed that the support 3 and the base 2 are more strongly bonded via the bonding film 81.

Note that the active state of the surface of the bonding film 11 activated in the step [2] relaxes with time. For this reason, it is preferable to perform this process [3] as soon as possible after completion of the process [2]. Specifically, after the completion of the step [2], the step [3] is preferably performed within 60 minutes, and more preferably within 5 minutes. If it is within such time, the surface of the bonding film 81 is maintained in a sufficiently active state. Therefore, when the support 3 including the bonding film 81 and the substrate 2 are bonded together in this step, the bonding film 81 is sufficiently between them. Can obtain a high bonding strength.
The bonding strength between the support 3 and the substrate 2 bonded in this manner is preferably 5 MPa (50 kgf / cm ² ) or more, more preferably 10 MPa (100 kgf / cm ² ) or more. . With such a bonding strength, peeling of the bonding interface can be sufficiently prevented. And the highly reliable actuator 1 is obtained.

[3-2] Next, as shown in FIG. 11A, the bonding film 82 and the substrate 2 exhibiting adhesiveness are formed in the same manner as the bonding method of the support 3 and the substrate 2 described above. The support 4 and the substrate 2 are bonded together so that they are in close contact. Thereby, as shown in FIG. 11B, the support 4 and the base 2 are bonded (adhered) via the bonding film 82.
At the same time, the piezoelectric body 32 is held between the support 3 and the base 2.

When the support body 3, the base body 2, and the support body 4 are laminated in this order as described above, the two-degree-of-freedom vibration system and each piezoelectric body 32 described above are configured by the support body 3, the base body 2, and the support body 4. Stored in an airtight space of the container.
Therefore, by performing this bonding step under reduced pressure or in the presence of a predetermined gas, the container containing the two-degree-of-freedom vibration system and each piezoelectric body 32 and (device) is evacuated under reduced pressure or in the presence of a predetermined gas. It can be hermetically sealed. Thereby, the two-degree-of-freedom vibration system and each piezoelectric body 32 can be placed under reduced pressure or in the presence of a predetermined gas over a long period of time.

The pressure under reduced pressure (atmospheric pressure) is not particularly limited, but is preferably about 1 × 10 ⁻³ to 1 × 10 ³ Pa, and preferably about 1 × 10 ⁻² to 1 × 10 ² Pa. More preferred. With such a pressure, the air resistance in the rotational driving of the first mass parts 21 and 22 and the second mass part 23 is sufficiently reduced while reliably preventing damage to the container due to excessive decompression. be able to. Further, since almost no oxygen, moisture, or the like exists in the airtight space, it is possible to reliably prevent the two-degree-of-freedom vibration system and each piezoelectric body 32 from being altered or deteriorated. As a result, a highly reliable actuator 1 can be obtained. Furthermore, since the temperature change of the two-degree-of-freedom vibration system and each piezoelectric body 32 can be relaxed by the adiabatic action due to the reduced pressure, the temperature characteristics of the two-degree-of-freedom vibration system and each piezoelectric body 32 are changed by a sudden change in the outside air temperature. A sudden change can be prevented.

On the other hand, examples of the predetermined gas include an inert gas such as nitrogen, helium, and argon, a reducing gas such as hydrogen, and air (atmosphere). Gas, reducing gas, etc.) are preferably used, and an inert gas is particularly preferably used. In the presence of an inert gas, since the gas activity is low, it is possible to reliably prevent the two-degree-of-freedom vibration system and each piezoelectric body 32 from being altered or deteriorated. Further, by making the pressure of the sealed gas equal to the atmospheric pressure, the load due to the pressure difference applied to the container is reduced. As a result, the reliability of the container is improved, and the reliability of the actuator 1 can be increased.
As described above, the actuator 1 is obtained by laminating the support 3, the base 2, and the support 4 in this order.

According to the manufacturing method of the actuator 1 as described above, the base body 2 and the supports 3 and 4 can be simply and firmly joined, and the reliability of the obtained actuator 1 can be made high.
In addition, according to the present invention, an actuator 1 can be obtained that can stably maintain for a long time a state in which an airtight space constituted by the base 2 and the supports 3 and 4 is decompressed or replaced with a predetermined gas. . As a result, the device housed in the airtight space is not easily exposed to the outside air or the like, and the highly reliable actuator 1 can be obtained.

In addition, each of the base 2 and the supports 3 and 4 can be joined without depending on the constituent materials of the base 2 and the supports 3 and 4 and even if the smoothness of the joint surface is not particularly high. The range of selection of constituent materials can be expanded.
Moreover, since the dimensional accuracy between each part joined can be improved, the actuator 1 can be assembled more as designed. Thereby, the operating characteristics of the actuator 1 can also be brought closer to the design value.
In addition, after obtaining the actuator 1, if necessary, at least one of the following two steps ([4A] and [4B]) (step of increasing the bonding strength of the actuator 1) for the actuator 1 ) May be performed. Thereby, the joint strength of the actuator 1 can be further improved.

[4A] The obtained actuator 1 is pressurized in a direction in which the support 3 and the base 2 and the support 4 and the base 2 approach each other.
Thereby, for example, the surface of the bonding film 81 is further brought closer to the surface of the support 3 and the surface of the substrate 2, respectively, and the bonding strength in the actuator 1 can be further increased.
Further, by pressurizing the actuator 1, the gap remaining at the bonding interface in the actuator 1 can be crushed and the bonding area can be further expanded. Thereby, the joint strength in the actuator 1 can be further increased.

In addition, what is necessary is just to adjust the pressure at the time of pressurizing the actuator 1 suitably according to conditions, such as a constituent material and thickness of each member to be joined, and a joining apparatus. Specifically, although slightly different depending on the constituent material and thickness of each member to be joined, it is preferably about 0.2 to 10 MPa, and more preferably about 1 to 5 MPa. Thereby, the joint strength of the actuator 1 can be reliably increased. In addition, although this pressure may exceed the said upper limit, depending on the constituent material of each member joined, damage etc. may arise in each member joined.
The time for pressurization is not particularly limited, but is preferably about 10 seconds to 30 minutes. In addition, what is necessary is just to change suitably the time to pressurize according to the pressure at the time of pressurizing. Specifically, the higher the pressure at which the actuator 1 is pressed, the more the bonding strength can be improved even if the pressurizing time is shortened.

[4B] The obtained actuator 1 is heated.
Thereby, the joint strength in the actuator 1 can be further increased.
At this time, the temperature at which the actuator 1 is heated is not particularly limited as long as it is higher than room temperature and lower than the heat resistance temperature of the actuator 1, but is preferably about 25 to 100 ° C, more preferably about 50 to 100 ° C. It is said. Heating at a temperature in such a range can reliably increase the bonding strength while reliably preventing the actuator 1 from being altered or deteriorated by heat.

The heating time is not particularly limited, but is preferably about 1 to 30 minutes.
Moreover, when performing both said process [4A] and [4B], it is preferable to perform these simultaneously. That is, as shown in FIG. 11C, it is preferable to heat the actuator 1 while applying pressure. Thereby, the effect by pressurization and the effect by heating are exhibited synergistically, and the joint strength of the actuator 1 can be particularly increased.

By performing the steps as described above, the joint strength in the actuator 1 can be further improved easily.
In this embodiment, the support 3 and the substrate 2 are bonded via the bonding film 81, and the support 4 and the substrate 2 are bonded via the bonding film 82. Any one of the bonding films 81 and 82 may be replaced with a film having an adhesive function such as an adhesive.

Second Embodiment
Next, as an example of the manufacturing method of the sealed device of the present invention, a second embodiment of the manufacturing method of the actuator 1 described above will be described based on FIG.
FIG. 13 is a view (longitudinal sectional view) for explaining the manufacturing method of the actuator according to the second embodiment. In the following, for convenience of explanation, the upper side in FIG. 13 is referred to as “upper” and the lower side is referred to as “lower”.
Hereinafter, the manufacturing method of the actuator according to the second embodiment will be described. The description will focus on the differences from the first embodiment, and the description of the same matters will be omitted.

In the manufacturing method according to the present embodiment, the support 3 including the bonding film 81, the support 4 including the bonding film 82, and the base body 2 are overlapped to obtain a temporary bonded body, and then the bonding in the temporary bonded body is performed. Except for applying energy to the films 81 and 82, respectively, the same as in the first embodiment.
That is, the manufacturing method of the actuator according to the present embodiment includes: [1] a support body 3 (first structure) including a bonding film 81 and a base body 2 (second structure) having a first mass portion 23. And a preparation step of preparing the support body 4 (first structure) including the bonding film 82, and [2] the bonding film 81 and the substrate 2, and the bonding film 82 and the substrate 2 under reduced pressure or in the presence of gas. A temporary joined body forming step for obtaining a temporary joined body by superimposing the substrate 2 and the supports 3 and 4 so as to be in close contact with each other; and [3] each bonding film 81 in the temporary joined body under reduced pressure or in the presence of gas. , 82 is applied to activate each bonding film 81, 82, thereby obtaining the actuator 1 formed by bonding the base 2 and the supports 3, 4. Hereinafter, each process will be described sequentially.

[1] Preparation Step First, as in the first embodiment, the support 3 including the bonding film 81, the support 4 including the bonding film 82, and the base 2 are prepared.
[2] Temporary Bonded Body Formation Step Next, under reduced pressure or in the presence of a predetermined gas, as shown in FIG. 13A, the bonding film 81 and the lower surface of the substrate 2, and the bonding film 82 and the upper surface of the substrate 2 The temporary support body 8 is obtained by superimposing the support body 3 and the support body 4 so as to be in close contact with each other.
In addition, in the state of the temporary joined body 8, since the support 3 and the base 2 and between the support 4 and the base 2 are not yet joined, their relative positions can be easily set. It can be adjusted (shifted). Therefore, once the temporary joined body 8 is obtained, the actuator finally obtained by finely adjusting the relative position between the support 3 and the base 2 or the relative position between the support 4 and the base 2 respectively. 1 assembly accuracy (dimensional accuracy) can be reliably increased.

[3] Bonding Step Next, energy is applied to the bonding films 81 and 82 in the temporary bonded body 8 as shown in FIG. 13B under reduced pressure or in the presence of a predetermined gas. When energy is applied to each bonding film 81, 82, the bonding film 81, 82 develops adhesiveness with the substrate 2. Thereby, the support bodies 3 and 4 and the base | substrate 2 are joined, and the actuator 1 is obtained.

Here, the energy applied to each of the bonding films 81 and 82 may be applied by any method. For example, the energy may be applied by the method described in the first embodiment.
In the present embodiment, as a method of applying energy to the bonding films 81 and 82, in particular, a method of irradiating the bonding films 81 and 82 with energy rays, a method of heating the bonding films 81 and 82, and It is preferable to use at least one method of applying a compressive force (physical energy) to the bonding films 81 and 82. These methods are suitable as energy application methods because energy can be applied to the bonding films 81 and 82 relatively easily and efficiently.

Among these, the various conditions of the method of irradiating the bonding films 81 and 82 with energy rays are the same as those in the first embodiment.
In this case, the energy rays pass through the support 3 or the support 4 and are irradiated to the bonding films 81 and 82. Therefore, it is preferable that the support body 3 or the support body 4 has translucency.
Various conditions of the method of heating the bonding films 81 and 82 and the method of applying a compressive force to the bonding films 81 and 82 are also the same as those in the first embodiment.

As described above, the actuator 1 shown in FIG. 13C can be obtained.
In addition, after obtaining the actuator 1, you may make it perform at least 1 process of process [4A] of said 1st Embodiment and [4B] with respect to this actuator 1 as needed.
In the actuator manufacturing method as described above, the same operations and effects as those of the actuator manufacturing method according to the first embodiment described above can be obtained.

<Third Embodiment>
Next, as an example of the manufacturing method of the sealed device of the present invention, a third embodiment of the manufacturing method of the actuator 1 described above will be described based on FIG.
FIG. 14 is a view (longitudinal sectional view) for explaining the manufacturing method of the actuator according to the third embodiment. In the following, for convenience of explanation, the upper side in FIG. 14 is referred to as “upper” and the lower side is referred to as “lower”.

Hereinafter, the manufacturing method of the actuator according to the third embodiment will be described. The description will focus on differences from the first embodiment, and description of similar matters will be omitted.
The manufacturing method according to the present embodiment includes, as the second structure, a base 2, a bonding film 812 provided on the lower surface of the base 2, and a bonding film 822 provided on the upper surface of the base 2. The same as in the first and second embodiments.

  That is, the manufacturing method according to the present embodiment includes: [1] the support 3 including the bonding film 811, the support 4 including the bonding film 821, the bonding film 812 provided on the lower surface, and the bonding film provided on the upper surface. A preparatory step of preparing a base body 2 including 822, [2] an energy applying step of applying energy to each of the bonding films 811, 812, 821, and 822, and [3] supporting under reduced pressure or in the presence of gas. A joining step of laminating the body 3, the base body 2, and the support body 4 in this order. Hereinafter, each process will be described sequentially.

[1] Preparatory Step First, as in the first embodiment, as shown in FIG. 14A, a support 3 (first structure) including a bonding film 811 and a support including a bonding film 821 are provided. A body 4 (first structure) is prepared.
Further, after preparing the base 2 in the same manner as in the first embodiment, as shown in FIG. 14A, a bonding film 812 is formed on the lower surface of the base 2 and a bonding film 822 is formed on the upper surface. . Thereby, the base 2 (second structure) including the bonding films 812 and 822 is obtained.
The formed bonding films 812 and 822 have the same configuration as the bonding films 811 and 821, respectively.

[2] Energy Application Step Next, energy is applied to each bonding film 811, 812, 821, 822 (not shown).
When energy is applied, adhesiveness develops on the surfaces of the bonding films 811, 812, 821, and 822.

[3] Bonding Step Next, the support 3 and the substrate 2 are bonded so that the bonding film 811 and the bonding film 812 are in close contact with each other under reduced pressure or in the presence of a predetermined gas, and the bonding film 821 and the bonding film are bonded together. The support 4 and the base 2 are bonded together so that 822 is in close contact therewith. As a result, as shown in FIG. 14B, the support 3 and the base 2 are bonded (adhered) via the bonding film 811 and the bonding film 812, and the support 4 and the base 2 are Bonding (adhesion) is performed through the bonding film 821 and the bonding film 822.

According to the present embodiment, since the first structure and the second structure are bonded so that the bonding films are in close contact with each other, depending on the constituent materials of the supports 3 and 4 and the base 2. Therefore, these joint strengths can be particularly increased.
Further, since the bonding films are bonded to each other, even if the bonding surfaces of the supports 3 and 4 and the substrate 2 are uneven, the bonding films 811, 812, 821, and 822 alleviate the unevenness (surface roughness). Thereby, the adhesiveness of the support bodies 3 and 4 and the base | substrate 2 can be improved. Thereby, the further improvement of these joint strengths is aimed at.
In the actuator manufacturing method as described above, the same operations and effects as those of the actuator manufacturing method according to the first embodiment described above can be obtained.

<Fourth embodiment>
Next, as an example of the manufacturing method of the sealed device of the present invention, a fourth embodiment of the manufacturing method of the actuator 1 described above will be described based on FIGS. 15 and 16.
FIG. 15 is a partially enlarged view showing a state before applying energy of the bonding film included in the actuator according to the fourth embodiment, and FIG. 16 shows a state after applying energy of the bonding film included in the actuator according to the fourth embodiment. It is a partial enlarged view. In the following description, the upper side in FIGS. 15 and 16 is referred to as “upper” and the lower side is referred to as “lower”.
Hereinafter, the fourth embodiment of the actuator will be described. The description will focus on differences from the actuator according to the first embodiment, and the description of the same matters will be omitted.

The actuator according to the present embodiment is the same as that of the first embodiment except that the structures of the bonding films 81 and 82 are different. Hereinafter, the bonding film 81 will be described as a representative.
That is, the actuator according to the present embodiment includes a metal atom, an oxygen atom bonded to the metal atom, and a leaving group bonded to at least one of the metal atom and the oxygen atom in a state where the bonding film 81 is before energy application. 303. In other words, it can be said that the bonding film 81 before energy application is a film in which a leaving group 303 is introduced into a metal oxide film made of a metal oxide, as shown in FIG.
When energy is applied to such a bonding film 81, the leaving group 303 is released from at least one of a metal atom and an oxygen atom, and an active hand 304 shown in FIG. 16 is generated at least near the surface of the bonding film 81. Is. As a result, the same adhesiveness as in the first embodiment appears on the surface of the bonding film 81.

Hereinafter, the bonding film 81 according to the present embodiment will be described.
The bonding film 81 is composed of a metal atom and an oxygen atom bonded to the metal atom, that is, a bonding film 81 in which the leaving group 303 is bonded to the metal oxide, so that the bonding film 81 is a strong film that is not easily deformed. . For this reason, the bonding film 81 itself has a high dimensional accuracy, and the actuator 1 finally obtained also has a high dimensional accuracy.
In addition, the bonding film 81 can be reliably bonded while maintaining excellent airtightness between them regardless of the constituent materials of the base 2 and the support 3. Thereby, the highly reliable actuator 1 that reliably prevents the intrusion of outside air and foreign matter can be obtained.

  Furthermore, the bonding film 81 is a solid that does not have fluidity. For this reason, the thickness and shape of the adhesive layer (bonding film 81) hardly change compared to a liquid or viscous liquid (semi-solid) adhesive having fluidity that has been conventionally used. Therefore, the dimensional accuracy of the actuator 1 obtained using the bonding film 81 is significantly higher than that of the conventional one. Furthermore, since the time required for curing the adhesive is not required, strong bonding can be achieved in a short time.

  Further, according to the present invention, the conductive bonding film 81 can be easily formed. In such a bonding film 81 and an actuator 1 described later, unintended charging can be suppressed or prevented. As a result, it is possible to prevent the malfunction of the actuator 1 due to the electrostatic force, specifically, the foreign matter adsorption to the actuator 1 and the unintentional operation of the two-degree-of-freedom vibration system (device).

  In addition, the conductive bonding film 81 can have a function as a power line and a signal line. That is, the bonding film 81 has a function of hermetically sealing between the base 2 and the support 3, and between the two-degree-of-freedom vibration system housed in the internal space of the actuator 1 and the piezoelectric body 32 and the outside. It has a function of ensuring continuity. Thereby, power and various control signals can be exchanged between the vibration system of the two degrees of freedom or the piezoelectric body 32 and the outside via the bonding film 81, so that it is not necessary to separately provide a power line, a signal line, or the like. . For this reason, the structure of the actuator 1 can be further simplified, the actuator 1 can be highly integrated and miniaturized, and the leakage of the sealing portion due to the arrangement of the power line and the signal line can be prevented.

Further, a part of the bonding film 81 in plan view is a bonding film including the Si skeleton described in the first embodiment, and the remaining is a bonding film including the metal oxide described in the present embodiment. Thus, the part of the bonding film 81 becomes a conductive part, and the remaining part becomes an insulating part. Accordingly, if the conductive portion is formed so as to be protected by the insulating portion, the bonding film 81 is particularly suitable as a power line and a signal line.
Also, if the bonding film 81 has conductivity, the resistivity of the bonding film 81, though slightly different depending on the composition of the material, but preferably not more than ^{1 × 10 -3 Ω · cm,} 1 × 10 - More preferably, it is ⁴ Ω · cm or less. As a result, the bonding film 81 sufficiently functions as a power line or a signal line with little loss.

  The leaving group 303 only needs to be present at least near the surface 35 of the bonding film 81, may exist substantially throughout the bonding film 81, or is unevenly distributed near the surface 35 of the bonding film 81. May be. By adopting a configuration in which the leaving group 303 is unevenly distributed in the vicinity of the surface 35, the bonding film 81 can appropriately exhibit the function as a metal oxide film. In other words, the bonding film 81 can be advantageously provided with a function as a metal oxide film excellent in characteristics such as conductivity and translucency in addition to the function responsible for bonding. In other words, it is possible to reliably prevent the leaving group 303 from impairing the properties of the bonding film 81 such as conductivity and translucency.

The metal atom is selected so that the function as the bonding film 81 as described above is suitably exhibited.
Specifically, the metal atom is not particularly limited. For example, Li, Be, B, Na, Mg, Al, K, Ca, Sc, V, Cr, Mn, Fe, Co, Ni, Cu, Zn Ga, Rb, Sr, Y, Zr, Nb, Mo, Cd, In, Sn, Sb, Cs, Ba, La, Hf, Ta, W, Ti, Pb, and the like. Among these, it is preferable to use one or more of In (indium), Sn (tin), Zn (zinc), Ti (titanium), and Sb (antimony) in combination. By using the bonding film 81 containing these metal atoms, that is, a metal oxide containing these metal atoms introduced with a leaving group 303, the bonding film 81 has excellent conductivity and transparency. Will be demonstrated.
More specifically, examples of the metal oxide include indium tin oxide (ITO), indium zinc oxide (IZO), antimony tin oxide (ATO), fluorine-containing indium tin oxide (FTO), and zinc oxide. (ZnO) and titanium dioxide (TiO _2), and the like.

When indium tin oxide (ITO) is used as the metal oxide, the atomic ratio of indium to tin (indium / tin ratio) is preferably 99/1 to 80/20, and 97/3 More preferably, it is -85/15. Thereby, the effects as described above can be more remarkably exhibited.
The abundance ratio of metal atoms to oxygen atoms in the bonding film 81 is preferably about 3: 7 to 7: 3, and more preferably about 4: 6 to 6: 4. By setting the abundance ratio of metal atoms and oxygen atoms to be in the above range, the stability of the bonding film 81 is increased, and the support 3 and the base 2 can be bonded more firmly.

  In addition, as described above, the leaving group 303 behaves so as to generate an active hand in the bonding film 81 by leaving from at least one of a metal atom and an oxygen atom. Therefore, although the leaving group 303 is relatively easily and uniformly desorbed by being given energy, it is reliably bonded to the bonding film 81 so as not to be desorbed when no energy is given. Those are preferably selected.

From this viewpoint, the leaving group 303 is preferably a hydrogen atom, a carbon atom, a nitrogen atom, a phosphorus atom, a sulfur atom, a halogen atom, or at least one of atomic groups composed of these atoms. It is done. Such a leaving group 303 is relatively excellent in bond / elimination selectivity by energy application. For this reason, such a leaving group 303 can sufficiently satisfy the above-described necessity, and the adhesiveness between the support 3 and the substrate 2 can be enhanced.
Examples of the atomic group (group) composed of the above atoms include, for example, an alkyl group such as a methyl group and an ethyl group, an alkoxy group such as a methoxy group and an ethoxy group, a carboxyl group, an amino group, and a sulfonic acid. Groups and the like.

Among the atoms and atomic groups as described above, the leaving group 303 is particularly preferably a hydrogen atom. Since the leaving group 303 composed of hydrogen atoms has high chemical stability, the bonding film 81 including a hydrogen atom as the leaving group 303 has excellent weather resistance and chemical resistance.
Considering the above, as the bonding film 81, indium tin oxide (ITO), indium zinc oxide (IZO), antimony tin oxide (ATO), fluorine-containing indium tin oxide (FTO), zinc oxide ( A material in which a hydrogen atom is introduced as a leaving group 303 into a metal oxide of ZnO) or titanium dioxide (TiO ₂ ) is preferably selected.

The bonding film 81 having such a configuration itself has excellent mechanical characteristics. In addition, it exhibits particularly excellent adhesion to many materials. Therefore, such a bonding film 81 adheres particularly firmly to the support 3 and also exhibits a particularly strong adherence to the base 2. As a result, the support 3 and the base 2 are firmly attached. Can be joined.
The average thickness of the bonding film 81 is preferably about 1 to 1000 nm, and more preferably about 2 to 800 nm. By setting the average thickness of the bonding film 81 within the above range, the dimensional accuracy of the actuator 1 is prevented from being significantly lowered, and the support 3 and the base 2 are bonded more firmly. It has sufficient conductivity.
That is, when the average thickness of the bonding film 81 is less than the lower limit, sufficient bonding strength may not be obtained or the conductivity may be significantly reduced. On the other hand, when the average thickness of the bonding film 81 exceeds the upper limit, the dimensional accuracy of the actuator 1 may be significantly reduced.

Furthermore, if the average thickness of the bonding film 81 is within the above range, a certain degree of shape followability is ensured for the bonding film 81. For this reason, for example, even when unevenness exists on the bonding surface of the support 3 (the surface on which the bonding film 81 is formed), the bonding is performed so as to follow the shape of the unevenness, depending on the height of the unevenness. A film 81 can be deposited. As a result, the bonding film 81 can absorb the unevenness and reduce the height of the unevenness generated on the surface. And when the support body 3 and the base | substrate 2 are bonded together, the adhesiveness with respect to the base | substrate 2 of the bonding film 81 can be improved.
Note that the degree of the shape followability as described above becomes more prominent as the bonding film 81 is thicker. Therefore, in order to sufficiently ensure the shape following property, the thickness of the bonding film 81 should be as large as possible.

  In the bonding film 81 as described above, when the leaving group 303 is present in almost the entire bonding film 81, for example, A: physical atmosphere in an atmosphere containing an atomic component constituting the leaving group 303. It can be formed by depositing a metal oxide material containing metal atoms and oxygen atoms by a phase film formation method. Further, when the leaving group 303 is unevenly distributed near the surface 35 of the bonding film 81, for example, after forming a metal oxide film containing B: metal atoms and the oxygen atoms, It can be formed by introducing a leaving group 303 into at least one of a metal atom and an oxygen atom contained in the vicinity of the surface.

Hereinafter, the case where the bonding film 81 is formed on the support 3 using the methods A and B will be described in detail.
<A> In the method A, as described above, the bonding film 81 is formed of a metal atom and an oxygen by a physical vapor deposition method (PVD method) in an atmosphere including an atomic component constituting the leaving group 303. It is formed by depositing a metal oxide material containing atoms. When the PVD method is used as described above, the leaving group 303 can be introduced into at least one of the metal atom and the oxygen atom relatively easily when the metal oxide material is made to fly toward the support 3. it can. For this reason, the leaving group 303 can be introduced over almost the entire bonding film 81.

  Furthermore, according to the PVD method, a dense and homogeneous bonding film 81 can be efficiently formed. Thereby, the bonding film 81 formed by the PVD method can be particularly strongly bonded to the base 2. Further, the bonding film 81 formed by the PVD method is maintained in an activated state with energy applied for a relatively long time. For this reason, the manufacturing process of the actuator 1 can be simplified and improved in efficiency.

  Further, examples of the PVD method include a vacuum deposition method, a sputtering method, an ion plating method, a laser ablation method, and the like. Among these, the sputtering method is preferably used. According to the sputtering method, metal oxide particles can be knocked out into an atmosphere containing an atomic component constituting the leaving group 303 without breaking a bond between a metal atom and an oxygen atom. Since the metal oxide particles can be brought into contact with a gas containing an atomic component constituting the leaving group 303, the leaving group to the metal oxide (metal atom or oxygen atom) can be contacted. 303 can be introduced more smoothly.

Hereinafter, as a method for forming the bonding film 81 by the PVD method, a case where the bonding film 81 is formed by a sputtering method (ion beam sputtering method) will be described as a representative.
First, before describing the method for forming the bonding film 81, the film forming apparatus 200 used when forming the bonding film 81 on the support 3 by ion beam sputtering will be described.

FIG. 17 is a longitudinal sectional view schematically showing a film forming apparatus used for manufacturing the bonding film according to the present embodiment, and FIG. 18 is a schematic view showing a configuration of an ion source included in the film forming apparatus shown in FIG. is there. In the following description, the upper side in FIG. 17 is referred to as “upper” and the lower side is referred to as “lower”.
A film forming apparatus 200 shown in FIG. 17 is configured so that the bonding film 81 can be formed in a chamber (apparatus) by an ion beam sputtering method.

  Specifically, the film forming apparatus 200 includes a chamber (vacuum chamber) 211 and a substrate holder (film forming object holding unit) 212 that is installed in the chamber 211 and holds the support 3 (film forming object). And an ion source (ion supply unit) 215 that irradiates the inside of the chamber 211 with the ion beam B, and a metal oxide that includes metal atoms and oxygen atoms by the irradiation of the ion beam B ( For example, it has a target holder (target holding portion) 217 that holds a target (metal oxide material) 216 that generates ITO.

The chamber 211 has a gas supply means 260 for supplying a gas containing an atomic component constituting the leaving group 303 (for example, hydrogen gas) into the chamber 211, and the chamber 211 is evacuated to control the pressure. And an evacuation unit 230 for performing the operation.
In the present embodiment, the substrate holder 212 is attached to the ceiling portion of the chamber 211. The substrate holder 212 is rotatable. Accordingly, the bonding film 81 can be formed on the support 3 with a uniform and uniform thickness.

As shown in FIG. 18, the ion source (ion gun) 215 includes an ion generation chamber 256 in which an opening (irradiation port) 250 is formed, a filament 257 provided in the ion generation chamber 256, grids 253 and 254, And a magnet 255 installed outside the ion generation chamber 256.
Further, as shown in FIG. 17, a gas supply source 219 for supplying a gas (sputtering gas) is connected to the ion generation chamber 256.

In the ion source 215, when the filament 257 is energized and heated in a state where gas is supplied from the gas supply source 219 into the ion generation chamber 256, electrons are emitted from the filament 257, and the emitted electrons are generated by the magnetic field of the magnet 255. It moves and collides with gas molecules supplied into the ion generation chamber 256. Thereby, gas molecules are ionized. The ions I ⁺ of the gas are extracted from the ion generation chamber 256 and accelerated by a voltage gradient between the grid 253 and the grid 254 and are emitted (irradiated) from the ion source 215 as an ion beam B through the opening 250. Is done.
The ion beam B irradiated from the ion source 215 collides with the surface of the target 216, and particles (sputtered particles) are knocked out from the target 216. The target 216 is made of a metal oxide material as described above.

  In the film forming apparatus 200, the ion source 215 is fixed (installed) on the side wall of the chamber 211 so that the opening 250 is located in the chamber 211. Note that the ion source 215 can be arranged at a position separated from the chamber 211 and connected to the chamber 211 via a connection portion. 200 can be reduced in size.

The ion source 215 is installed such that the opening 250 faces in a direction different from that of the substrate holder 212, in this embodiment, the bottom side of the chamber 211.
The number of ion sources 215 installed is not limited to one, and may be plural. By installing a plurality of ion sources 215, the deposition rate of the bonding film 81 can be further increased.

In addition, a first shutter 220 and a second shutter 221 that can cover the target holder 217 and the substrate holder 212 are disposed, respectively.
These shutters 220 and 221 are for preventing the target 216, the support 3 and the bonding film 81 from being exposed to an unnecessary atmosphere or the like, respectively.

The exhaust means 230 includes a pump 232, an exhaust line 231 that communicates the pump 232 and the chamber 211, and a valve 233 provided in the middle of the exhaust line 231. The pressure can be reduced.
Further, the gas supply means 260 includes a gas cylinder 264 that stores a gas (for example, hydrogen gas) that includes an atomic component constituting the leaving group 303, a gas supply line 261 that guides the gas from the gas cylinder 264 to the chamber 211, and a gas A pump 262 and a valve 263 provided in the middle of the supply line 261 are configured so that a gas containing an atomic component constituting the leaving group 303 can be supplied into the chamber 211.

Using the film forming apparatus 200 having the above configuration, the bonding film 81 is formed as follows.
Here, a method for forming the bonding film 81 on the support 3 will be described.
First, the support 3 is prepared, and the support 3 is carried into the chamber 211 of the film forming apparatus 200 and mounted (set) on the substrate holder 212.

Next, the exhaust means 230 is operated, that is, the valve 233 is opened while the pump 232 is operated, whereby the inside of the chamber 211 is decompressed. The degree of vacuum (degree of vacuum) is not particularly limited, but is preferably about 1 × 10 ⁻⁷ to 1 × 10 ⁻⁴ Torr, preferably about 1 × 10 ⁻⁶ to 1 × 10 ⁻⁵ Torr. Is more preferable.
Further, the gas supply means 260 is operated, that is, the valve 263 is opened while the pump 262 is operated, so that the gas containing the atomic components constituting the leaving group 303 is supplied into the chamber 211. Thereby, the inside of a chamber can be made into the atmosphere containing this gas (hydrogen gas atmosphere).

The flow rate of the gas containing the atomic component constituting the leaving group 303 is preferably about 1 to 100 ccm, and more preferably about 10 to 60 ccm. Thereby, the leaving group 303 can be reliably introduced into at least one of the metal atom and the oxygen atom.
Further, the temperature in the chamber 211 may be 25 ° C. or higher, but is preferably about 25 to 100 ° C. By setting within this range, the reaction between the metal atom or oxygen atom and the gas containing the atomic component is efficiently performed, and the gas containing the atomic component is reliably introduced into the metal atom and the oxygen atom. Can do.

Next, the second shutter 221 is opened, and the first shutter 220 is further opened.
In this state, a gas is introduced into the ion generation chamber 256 of the ion source 215, and the filament 257 is energized and heated. Thereby, electrons are emitted from the filament 257, and the emitted electrons collide with gas molecules, whereby the gas molecules are ionized.

The ions I ⁺ of the gas are accelerated by the grid 253 and the grid 254, emitted from the ion source 215, and collide with a target 216 made of a cathode material. Thereby, particles of metal oxide (for example, ITO) are knocked out from the target 216. At this time, since the inside of the chamber 211 is in an atmosphere containing a gas containing an atomic component constituting the leaving group 303 (for example, in a hydrogen gas atmosphere), the metal atoms contained in the particles knocked out into the chamber 211 And a leaving group 303 is introduced into the oxygen atom. Then, the metal oxide introduced with the leaving group 303 is deposited on the support 3 to form the bonding film 81.
In the ion beam sputtering method described in this embodiment, in the ion generation chamber 256 of the ion source 215, a discharge is performed, the electron e ^- is occurs, the electron e ^- is shielded by the grid 253, Release into the chamber 211 is prevented.

Further, since the irradiation direction of the ion beam B (the opening 250 of the ion source 215) is directed to the target 216 (a direction different from the bottom side of the chamber 211), the ultraviolet rays generated in the ion generation chamber 256 are formed. Irradiation to the bonding film 81 is more reliably prevented, and it is possible to reliably prevent the leaving group 303 introduced during the formation of the bonding film 81 from being detached.
As described above, the bonding film 81 in which the leaving group 303 exists almost entirely can be formed.

  <B> On the other hand, in the method B, the bonding film 81 is formed of a metal oxide film containing metal atoms and oxygen atoms as described above, and then the metal contained in the vicinity of the surface of the metal oxide film. It is formed by introducing a leaving group 303 into at least one of an atom and an oxygen atom. According to such a method, it is possible to introduce the leaving group 303 in an unevenly distributed state near the surface of the metal oxide film in a relatively simple process, and to achieve both characteristics as a bonding film and a metal oxide film. An excellent bonding film 81 can be formed.

  Here, the metal oxide film may be formed by any method, for example, PVD method (physical vapor deposition method), CVD method (chemical vapor deposition method), plasma polymerization method, etc. The film can be formed by various vapor phase film forming methods, various liquid phase film forming methods, and the like, and it is particularly preferable to form the film by the PVD method. According to the PVD method, a dense and homogeneous metal oxide film can be efficiently formed.

  Moreover, examples of the PVD method include a vacuum deposition method, a sputtering method, an ion plating method, a laser ablation method, and the like. Among these, it is preferable to use a sputtering method. According to the sputtering method, the metal oxide particles can be struck out into the atmosphere and supplied onto the support 3 without breaking the bond between the metal atom and the oxygen atom. An oxide film can be formed.

  Furthermore, as a method for introducing the leaving group 303 near the surface of the metal oxide film, various methods are used. For example, the metal oxide film is formed in an atmosphere containing an atomic component constituting the B1: leaving group 303. Examples of the method include heat treatment (annealing), B2: ion implantation, and the like. In particular, it is preferable to use the method B1. According to the method B1, the leaving group 303 can be selectively introduced near the surface of the metal oxide film relatively easily. Further, by appropriately setting the processing conditions such as the atmospheric temperature and the processing time when performing the heat treatment, the amount of the leaving group 303 to be introduced, and further the thickness of the metal oxide film into which the leaving group 303 is introduced. Can be accurately controlled.

Hereinafter, a metal oxide film is formed by a sputtering method (ion beam sputtering method), and then the obtained metal oxide film is subjected to heat treatment (annealing) in an atmosphere containing an atomic component constituting the leaving group 303. Thus, the case where the bonding film 81 is obtained will be described as a representative.
Even when the bonding film 81 is formed using the method B, a film forming apparatus similar to the film forming apparatus 200 used when forming the bonding film 81 using the method A is used. A description of the film forming apparatus is omitted.

[I] First, the support 3 is prepared. Then, the support 3 is carried into the chamber 211 of the film forming apparatus 200 and mounted (set) on the substrate holder 212.
[Ii] Next, the exhaust means 230 is operated, that is, the valve 233 is opened while the pump 232 is operated, so that the inside of the chamber 211 is decompressed. The degree of vacuum (degree of vacuum) is not particularly limited, but is preferably about 1 × 10 ⁻⁷ to 1 × 10 ⁻⁴ Torr, preferably about 1 × 10 ⁻⁶ to 1 × 10 ⁻⁵ Torr. Is more preferable.
At this time, the heating means is operated to heat the chamber 211. Although the temperature in the chamber 211 should just be 25 degreeC or more, it is preferable that it is about 25-100 degreeC. By setting within this range, a metal oxide film having a high film density can be formed.

[Iii] Next, the second shutter 221 is opened, and the first shutter 220 is further opened.
In this state, a gas is introduced into the ion generation chamber 256 of the ion source 215, and the filament 257 is energized and heated. Thereby, electrons are emitted from the filament 257, and the emitted electrons collide with gas molecules, whereby the gas molecules are ionized.
The ions I ⁺ of the gas are accelerated by the grid 253 and the grid 254, emitted from the ion source 215, and collide with a target 216 made of a cathode material. As a result, metal oxide (for example, ITO) particles are knocked out of the target 216 and deposited on the support 3 to form a metal oxide film containing metal atoms and oxygen atoms bonded to the metal atoms. It is formed.

In the ion beam sputtering method described in this embodiment, in the ion generation chamber 256 of the ion source 215, a discharge is performed, the electron e ^- is occurs, the electron e ^- is shielded by the grid 253, Release into the chamber 211 is prevented.
Further, since the irradiation direction of the ion beam B (the opening 250 of the ion source 215) is directed to the target 216 (a direction different from the bottom side of the chamber 211), the ultraviolet rays generated in the ion generation chamber 256 are formed. Irradiation to the bonding film 81 is more reliably prevented, and it is possible to reliably prevent the leaving group 303 introduced during the formation of the bonding film 81 from being detached.

[Iv] Next, with the second shutter 221 open, the first shutter 220 is closed.
In this state, the heating means is operated to further heat the chamber 211. The temperature in the chamber 211 is set to a temperature at which the leaving group 303 is efficiently introduced onto the surface of the metal oxide film, and is preferably about 100 to 600 ° C., more preferably about 150 to 300 ° C. preferable. By setting within this range, in the next step [v], the leaving group 303 can be efficiently introduced onto the surface of the metal oxide film without deteriorating and degrading the support 3 and the metal oxide film. it can.

[V] Next, the gas supply means 260 is operated, that is, the valve 263 is opened in a state where the pump 262 is operated, so that the gas containing the atomic component constituting the leaving group 303 is supplied into the chamber 211. Thereby, the inside of the chamber 211 can be made into the atmosphere containing this gas (under hydrogen gas atmosphere).
As described above, in the state where the inside of the chamber 211 is heated in the step [iv], the inside of the chamber 211 includes an atmosphere containing a gas containing an atomic component constituting the leaving group 303 (for example, under a hydrogen gas atmosphere). Then, the leaving group 303 is introduced into at least one of metal atoms and oxygen atoms existing near the surface of the metal oxide film, so that the bonding film 81 is formed.
The flow rate of the gas containing the atomic component constituting the leaving group 303 is preferably about 1 to 100 ccm, and more preferably about 10 to 60 ccm. Thereby, the leaving group 303 can be reliably introduced into at least one of the metal atom and the oxygen atom.

  Note that, in the chamber 211, it is preferable to maintain the reduced pressure state adjusted by operating the exhaust unit 230 in the step [ii]. Thereby, the leaving group 303 can be introduced more smoothly into the vicinity of the surface of the metal oxide film. In addition, by reducing the pressure in the chamber 211 in this step while maintaining the reduced pressure state in the step [ii], it is possible to save the time for reducing the pressure again. There is also an advantage that it can be achieved.

The degree of vacuum (degree of vacuum) is not particularly limited, but is preferably about 1 × 10 ⁻⁷ to 1 × 10 ⁻⁴ Torr, preferably about 1 × 10 ⁻⁶ to 1 × 10 ⁻⁵ Torr. Is more preferable.
Moreover, it is preferable that the time which heat-processes is about 15 to 120 minutes, and it is more preferable that it is about 30 to 60 minutes.
Although depending on the type of leaving group 303 to be introduced and the like, the metal oxide film can be obtained by setting the conditions (temperature in the chamber 211, degree of vacuum, gas flow rate, treatment time) during the heat treatment within the above ranges. A leaving group 303 can be selectively introduced in the vicinity of the surface.
As described above, the bonding film 81 in which the leaving group 303 is unevenly distributed near the surface 35 can be formed.
In the actuator 1 according to the fourth embodiment as described above, the same operations and effects as in the first embodiment can be obtained.

<Fifth Embodiment>
Next, as an example of the manufacturing method of the sealed device of the present invention, a fifth embodiment of the manufacturing method of the actuator 1 described above will be described based on FIG.
Hereinafter, the fifth embodiment of the actuator will be described, but the description will focus on differences from the actuator according to the fourth embodiment, and description of similar matters will be omitted.

The actuator according to this embodiment is the same as that of the fourth embodiment except that the configuration of the bonding film is different.
That is, the actuator according to the present embodiment includes the leaving group 303 composed of the metal atom and the organic component in the state before the energy is applied to the bonding film 81 as in the fourth embodiment.
In such a bonding film 81, when energy is applied, the leaving group 303 is detached from the bonding film 81, and an active hand 304 is generated at least near the surface of the bonding film 81. As a result, the same adhesiveness as in the fourth embodiment appears on the surface of the bonding film 81.

Hereinafter, the bonding film 81 according to the present embodiment will be described.
The bonding film 81 is provided on the support 3 and includes a leaving group 303 composed of a metal atom and an organic component.
In such a bonding film 81, when energy is applied, the leaving group 303 is released from at least the vicinity of the surface 35 of the bonding film 81, and as shown in FIG. A hand 304 is generated. As a result, adhesiveness is developed on the surface 35 of the bonding film 81. When such adhesiveness is developed, the support 3 provided with the bonding film 81 can be bonded to the base 2 firmly and efficiently with high dimensional accuracy.
Further, since the bonding film 81 includes a metal atom and a leaving group 303 composed of an organic component, that is, an organic metal film, the bonding film 81 is a strong film that is difficult to be deformed. For this reason, the bonding film 81 itself has a high dimensional accuracy, and the actuator 1 finally obtained also has a high dimensional accuracy.

  Such a bonding film 81 is a solid that does not have fluidity. For this reason, the thickness and shape of the adhesive layer (bonding film 81) hardly change compared to a liquid or viscous liquid (semi-solid) adhesive having fluidity that has been conventionally used. Therefore, the dimensional accuracy of the actuator 1 obtained by using such a bonding film 81 is remarkably higher than that in the past. Furthermore, since the time required for curing the adhesive is not required, strong bonding can be achieved in a short time.

In the present invention, the bonding film 81 preferably has conductivity. Thereby, in the actuator 1 to be described later, unintended charging can be suppressed or prevented. As a result, the malfunction of the actuator 1 due to the electrostatic force, specifically, the foreign matter adsorption to the actuator 1 and the unintentional operation of the two-degree-of-freedom vibration system can be prevented.
Further, the conductive bonding film 81 can have both functions as a power line and a signal line, as in the fourth embodiment.
The metal atom and the leaving group 303 are selected so that the function as the bonding film 81 as described above is suitably exhibited.

  Specifically, examples of the metal atom include Li, Be, B, Na, Mg, Al, K, Ca, Sc, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Rb, Examples include Sr, Y, Zr, Nb, Mo, Cd, In, Sn, Sb, Cs, Ba, La, Hf, Ta, W, Ti, and Pb. Among these, it is preferable to use one or more of Cu, Al, Zn and Fe in combination. By making the bonding film 81 contain these metal atoms, the bonding film 81 exhibits excellent conductivity. Further, when the bonding film 81 is formed by using a metal organic chemical vapor deposition method to be described later, a bonding film having a relatively easy and uniform film thickness using a metal complex containing these metals as a raw material. 81 can be deposited.

  Further, as described above, the leaving group 303 behaves so as to generate an active hand in the bonding film 81 by detaching from the bonding film 81. Therefore, although the leaving group 303 is relatively easily and uniformly desorbed by being given energy, it is reliably bonded to the bonding film 81 so as not to be desorbed when no energy is given. Those are preferably selected.

Specifically, as the leaving group 303, an atomic group containing a carbon atom as an essential component and containing at least one of a hydrogen atom, a nitrogen atom, a phosphorus atom, a sulfur atom and a halogen atom is suitably selected. Such a leaving group 303 is relatively excellent in bond / elimination selectivity by energy application. For this reason, such a leaving group 303 can sufficiently satisfy the above-described necessity, and the adhesiveness of the bonding film 81 can be made higher.
More specifically, examples of the atomic group (group) include an alkyl group such as a methyl group and an ethyl group, an alkoxy group such as a methoxy group and an ethoxy group, and a carboxyl group, and the end of the alkyl group is an isocyanate group. And those terminated with a group, an amino group, a sulfonic acid group, and the like.
Among the atomic groups as described above, the leaving group 303 is particularly preferably an alkyl group. Since the leaving group 303 composed of an alkyl group has high chemical stability, the bonding film 81 having an alkyl group as the leaving group 303 has excellent weather resistance and chemical resistance.

  In the bonding film 81 having such a configuration, the abundance ratio of metal atoms to oxygen atoms is preferably about 3: 7 to 7: 3, and more preferably about 4: 6 to 6: 4. By setting the abundance ratio of metal atoms and carbon atoms to be in the above range, the stability of the bonding film 81 is increased, and the support 3 and the base 2 can be bonded more firmly. Further, the bonding film 81 can exhibit excellent conductivity.

The average thickness of the bonding film 81 is preferably about 1 to 1000 nm, and more preferably about 2 to 800 nm. By setting the average thickness of the bonding film 81 within the above range, it is possible to bond the support 3 and the base 2 more firmly while preventing the dimensional accuracy of the actuator 1 from being significantly reduced.
That is, when the average thickness of the bonding film 81 is less than the lower limit value, there is a possibility that sufficient bonding strength cannot be obtained. On the other hand, when the average thickness of the bonding film 81 exceeds the upper limit, the dimensional accuracy of the actuator 1 may be significantly reduced.

Furthermore, if the average thickness of the bonding film 81 is within the above range, a certain degree of shape followability is ensured for the bonding film 81. For this reason, for example, even when unevenness exists on the bonding surface of the support 3 (the surface on which the bonding film 81 is formed), the bonding is performed so as to follow the shape of the unevenness, depending on the height of the unevenness. A film 81 can be deposited. As a result, the bonding film 81 can absorb the unevenness and reduce the height of the unevenness generated on the surface. And when the support body 3 and the base | substrate 2 are bonded together, the adhesiveness with respect to the base | substrate 2 of the bonding film 81 can be improved.
Note that the degree of the shape followability as described above becomes more prominent as the bonding film 81 is thicker. Therefore, in order to sufficiently ensure the shape following property, the thickness of the bonding film 81 should be as large as possible.

  The bonding film 81 as described above may be formed by any method. For example, an organic substance containing a leaving group (organic component) 303 is introduced into a metal film composed of IIa: metal atoms. Method of forming the bonding film 81, IIb: The bonding film 81 is formed using a metal organic chemical vapor deposition method using an organometallic material having a metal atom and an organic substance containing a leaving group (organic component) 303 as a raw material. Method (stacking method or forming a bonding film consisting of a monoatomic layer), IIc: an organic metal material having a metal atom and an organic substance containing a leaving group 303 as a raw material, dissolved in a suitable solvent, and spin coating method, etc. And a method of forming a bonding film by using them. Among these, it is preferable to form the bonding film 81 by the method IIb. According to such a method, the bonding film 81 having a uniform film thickness can be formed by a relatively simple process.

Hereinafter, by the method of IIb, that is, the method of forming the bonding film 81 using a metal organic chemical vapor deposition method using an organic metal material having a metal atom and an organic substance containing a leaving group (organic component) 303 as a raw material, A case where the bonding film 81 is obtained will be described as a representative.
First, before describing the method for forming the bonding film 81, the film forming apparatus 400 used when forming the bonding film 81 will be described.

FIG. 19 is a longitudinal sectional view schematically showing a film forming apparatus used for manufacturing a bonding film in the present embodiment. In the following description, the upper side in FIG. 19 is referred to as “upper” and the lower side is referred to as “lower”.
A film forming apparatus 400 shown in FIG. 19 is configured so that the bonding film 81 can be formed in the chamber 411 by a metal organic chemical vapor deposition method (hereinafter sometimes abbreviated as “MOCVD method”). .

  Specifically, the film forming apparatus 400 includes a chamber (vacuum chamber) 411 and a substrate holder (film forming object holding unit) 412 that is installed in the chamber 411 and holds the support 3 (film forming object). And an organic metal material supply means 460 for supplying a vaporized organic metal material into the chamber 411, a gas supply means 470 for supplying a gas for making the inside of the chamber 411 under a low reducing atmosphere, An exhaust unit 430 for controlling the pressure by exhausting air and a heating unit (not shown) for heating the substrate holder 412 are provided.

The substrate holder 412 is attached to the bottom of the chamber 411 in this embodiment. The substrate holder 412 can be rotated by the operation of a motor. Accordingly, the bonding film 81 can be formed on the support 3 with a uniform and uniform thickness.
Further, in the vicinity of the substrate holder 412, a shutter 421 that can cover them is provided. The shutter 421 is for preventing the support 3 and the bonding film 81 from being exposed to an unnecessary atmosphere or the like.

The organometallic material supply unit 460 is connected to the chamber 411. The organometallic material supply means 460 includes a storage tank 462 that stores a solid organometallic material, a gas cylinder 465 that stores a carrier gas that feeds the evaporated organometallic material into the chamber 411, and a carrier gas that is vaporized. The gas supply line 461 guides the organometallic material into the chamber 411, and a pump 464 and a valve 463 provided in the middle of the gas supply line 461. In the organometallic material supply means 460 having such a configuration, the storage tank 462 has a heating means, and the operation of the heating means can heat and vaporize the solid organometallic material. Therefore, when the pump 464 is operated with the valve 463 opened and the carrier gas is supplied from the gas cylinder 465 to the storage tank 462, the organometallic material vaporized together with the carrier gas passes through the supply line 461 and enters the chamber. 411 is supplied.
In addition, it does not specifically limit as carrier gas, For example, nitrogen gas, argon gas, helium gas, etc. are used suitably.

  In this embodiment, the organometallic material supply unit 460 is connected to the chamber 411. The gas supply means 470 includes a gas cylinder 475 for storing a gas for making the inside of the chamber 411 under a low reducing atmosphere, a gas supply line 471 for introducing the gas for making the low reducing atmosphere into the chamber 411, A pump 474 and a valve 473 provided in the middle of the gas supply line 471 are configured. In the gas supply means 470 having such a configuration, when the pump 474 is operated with the valve 473 opened, the gas for making the low reducing atmosphere is supplied from the gas cylinder 475 through the supply line 471 to the chamber 411. It is designed to be supplied inside.

A gas for making the inside of the chamber 411 under a low reducing atmosphere is not particularly limited, and examples thereof include hydrogen gas, nitrogen gas, argon gas, nitrogen monoxide, dinitrogen monoxide, and the like. One kind or a combination of two or more kinds can be used, and among these, hydrogen gas is particularly preferably used. If hydrogen gas is used as such a gas, the inside of the chamber 411 can be surely brought into a low reducing atmosphere. For this reason, when forming the bonding film 81 using the MOCVD method using the organic metal material as a raw material, at least a part of the organic component contained in the organic metal material is left as the leaving group 303 in a state where the bonding film 81 is left. Can be formed.
The exhaust unit 430 includes a pump 432, an exhaust line 431 that communicates the pump 432 and the chamber 411, and a valve 433 provided in the middle of the exhaust line 431. The pressure can be reduced.

The bonding film 81 is formed on the support 3 by the MOCVD method using the film forming apparatus 400 having the above configuration as follows.
[I] First, the support 3 is prepared. Then, the support 3 is carried into the chamber 411 of the film forming apparatus 400 and mounted (set) on the substrate holder 412.
[Ii] Next, the exhaust unit 430 is operated, that is, the valve 433 is opened while the pump 432 is operated, so that the inside of the chamber 411 is decompressed. The degree of vacuum (degree of vacuum) is not particularly limited, but is preferably about 1 × 10 ⁻⁷ to 1 × 10 ⁻⁴ Torr, preferably about 1 × 10 ⁻⁶ to 1 × 10 ⁻⁵ Torr. Is more preferable.
In addition, by operating the gas supply means 470, that is, by opening the valve 473 while the pump 474 is operated, the gas for making the low reducing atmosphere is supplied into the chamber 411, and the inside of the chamber 411 is supplied. Under a low reducing atmosphere. The flow rate of the gas by the gas supply means 470 is not particularly limited, but is preferably about 0.1 to 10 ccm, and more preferably about 1 to 5 ccm.

  Further, at this time, the heating means is operated to heat the substrate holder 412. The temperature of the substrate holder 412 varies slightly depending on the type of the bonding film 81 to be formed, that is, the type of raw material used when forming the bonding film 81, but is preferably about 200 to 600 ° C., and 250 to 450 ° C. More preferred is the degree. By setting within this range, the bonding film 81 having excellent adhesiveness can be formed using an organometallic material described later.

[Iii] Next, the shutter 421 is opened.
Then, by operating the heating means provided in the storage tank 462 in which the solid organic metal material is stored, the pump 464 is operated in a state where the organic metal material is vaporized, and the vaporization is performed by opening the valve 463. The organometallic material thus introduced is introduced into the chamber together with the carrier gas.
As described above, when the vaporized organometallic material is supplied into the chamber 411 in a state in which the substrate holder 412 is heated in the step [ii], the organometallic material is heated on the support 3, so that the organic metal material is heated. The bonding film 81 can be formed on the support 3 in a state where a part of the organic matter contained in the metal material remains.

That is, according to the MOCVD method, if a film containing metal atoms is formed so that a part of the organic substance contained in the organometallic material remains, a part of the organic substance exhibits a function as the leaving group 303. A membrane 81 can be formed on the support 3.
The organometallic material used in such MOCVD method is not particularly limited. For example, 2,4-pentadionate-copper (II), tris (8-quinolinolato) aluminum (Alq ₃ ), tris (4 -Methyl-8 quinolinolate) Aluminum (III) (Almq ₃ ), (8-Hydroxyquinoline) zinc (Znq ₂ ), amide, acetylacetonate, alkoxy, silicon containing various transition metal elements such as copper phthalocyanine Metal complexes such as silyl group containing carbonyl and carboxyl group, alkyl metals such as trimethyl gallium, trimethyl aluminum, and diethyl zinc, and derivatives thereof. Among these, the organometallic material is preferably a metal complex. By using the metal complex, the bonding film 81 can be reliably formed in a state where a part of the organic substance contained in the metal complex remains.

Further, in this embodiment, the gas supply means 470 is operated so that the inside of the chamber 411 is in a low reducing atmosphere. By making such an atmosphere, pure metal is formed on the support 3. Without forming a film, it is possible to form a film in a state where a part of the organic substance contained in the organometallic material remains. That is, the bonding film 81 having excellent characteristics as both the bonding film and the metal film can be formed.
The flow rate of the vaporized organometallic material is preferably about 1 to 100 ccm, and more preferably about 10 to 60 ccm. Accordingly, the bonding film 81 can be formed with a uniform film thickness and with a part of the organic substance contained in the organometallic material remaining.

As described above, the structure in which the residue remaining in the film when the bonding film 81 is formed is used as the leaving group 303, so that it is not necessary to introduce a leaving group into the formed metal film or the like. The bonding film 81 can be formed by a relatively simple process.
Note that part of the organic substance remaining in the bonding film 81 formed using the organometallic material may function as the leaving group 303, or part of the organic substance may function as the leaving group 303. It may function as.

As described above, the bonding film 81 can be formed.
In the actuator 1 according to the fifth embodiment as described above, the same operations and effects as in the first embodiment can be obtained.
The actuator 1 as described above can be suitably applied to an optical scanner used in an image forming apparatus such as a laser printer, an imaging display, a barcode reader, a scanning confocal microscope, or the like.

<Sixth Embodiment>
Next, a method for manufacturing a piezoelectric vibrator will be described based on FIG. 20 as an example of a method for manufacturing a sealed device of the present invention.
FIG. 20 is a longitudinal sectional view showing a piezoelectric vibrator to which the sealed device of the present invention is applied. In the following, for convenience of explanation, the upper side in FIG. 20 is referred to as “upper” and the lower side is referred to as “lower”.

A piezoelectric vibrator 10 shown in FIG. 20 includes a plate-shaped piezoelectric element 11, a box-shaped container 12 having a recess, and a plate-shaped lid 13 joined to the container 12 so as to close the recess. Thereby, the closed space 120 is defined by the container 12 and the lid body 13.
The end of the piezoelectric element 11 is joined to an electrode 141 provided on the surface of the container 12 that faces the closed space 120. In addition, an electrode 142 connected to the electrode 141 is provided on the outer surface of the container 12 in order to draw the electrode 141 out of the closed space 120.
In such a piezoelectric vibrator 10, the upper surface of the container 12 and the lower surface of the lid 13 are bonded via a bonding film 19.

Here, the shape of the piezoelectric element 11 is not particularly limited. For example, the piezoelectric element 11 has a sound-like shape in plan view. Examples of the constituent material of the piezoelectric element 11 include various piezoelectric materials such as quartz.
Examples of the constituent material of the container 12 include ceramic materials such as alumina, zirconia, and aluminum nitride.

On the other hand, examples of the constituent material of the lid 13 include the ceramic materials described above, stainless steel, Fe—Ni alloys, and Fe—Ni—Co alloys.
Moreover, as a constituent material of each electrode 141 and 142, metal materials, such as Cu, Ag, and Al, etc. are mentioned, for example. Each of such electrodes 141 and 142 is formed by various film forming methods.

  In such a piezoelectric vibrator 10, the lid 13 (first structure) having the bonding film 19 on the lower surface and the container 12 (second structure) are adhered to the container 12. Join them so that they overlap. Thereby, the lid 13 and the container 12 can be reliably hermetically sealed. As a result, the contact between the piezoelectric element 11 housed in the closed space 120 and the outside air can be reliably prevented, and the piezoelectric element 11 is altered or deteriorated by the outside air, moisture contained therein, or the like. Intrusion of foreign matters can be reliably prevented.

In addition, air resistance when the piezoelectric element 11 vibrates can be reduced by hermetically sealing the closed space 120 while maintaining a reduced pressure state. Thereby, the precision of the frequency of the piezoelectric element 11 can be improved.
The first structure (the lid 13 including the bonding film 19) and the second structure (the container 12) are the actuators according to the first to fifth embodiments described above. The first structure and the second structure are joined in the same manner as the method of joining. Thereby, the same operation and effect as the first embodiment to the fifth embodiment can be obtained.

  Further, by replacing the electrode 141 with a bonding film formed by the sealed device manufacturing method according to the fourth embodiment or the fifth embodiment, the electrode 141 can be used as a container in addition to the function as an electrode. 12 and the lid 13 can also function as a bonding film. This eliminates the need to form a metal film as the electrode 141, thereby simplifying the manufacturing process of the piezoelectric vibrator 10 and reducing the risk of leakage in the closed space 120. Can be increased. As a result, the reliability of the piezoelectric vibrator 10 can be increased, and the size and thickness can be reduced.

<Seventh embodiment>
Next, as an example of the method for manufacturing a sealed device of the present invention, a method for manufacturing a discharge lamp will be described with reference to FIG.
FIG. 21 is a longitudinal sectional view showing a discharge lamp to which the sealed device of the present invention is applied.
The discharge lamp 15 shown in FIG. 21 hermetically seals the light emitting tube 16 made of silica glass and both ends of the light emitting tube 16, and is disposed opposite to both ends of the light emitting tube 16, thereby generating discharge in the inner space of the light emitting tube 16. And a pair of electrodes 17 and 18 to be operated.
Further, in the discharge lamp 15, the arc tube 16 and the electrodes 17 and 18 are hermetically bonded via the bonding film 19, respectively. The arc tube 16 is filled with a rare gas such as Ar, Kr, or Xe, or a mixed gas containing these rare gases and other gases.

In such a discharge lamp 15, the electrodes 17 and 18 (first structure) having the bonding film 19 on the outer peripheral surface and the arc tube 16 (second structure) are connected to each other. Join so that it is in close contact with the inner wall. Thereby, the junction part of the arc_tube | light_emitting_tube 16 and the electrodes 17 and 18 can be airtightly sealed reliably. As a result, it is possible to reliably prevent the gas sealed in the arc tube 16 from leaking to the outside over a long period of time, and a highly reliable discharge lamp 15 can be obtained.
The first structure (the electrodes 17 and 18 including the bonding film 19) and the second structure (the arc tube 16) are the same as those in the actuators according to the first to fifth embodiments. The first structure and the second structure are joined in the same manner as the method of joining. Thereby, the same operation and effect as the first embodiment to the fifth embodiment can be obtained.

As mentioned above, although the manufacturing method of the sealing type device and sealing type device of this invention were demonstrated based on embodiment of illustration, this invention is not limited to this.
For example, in the actuators, piezoelectric vibrators, and discharge lamps according to the above embodiments, the configuration of each part can be replaced with any configuration that exhibits the same function, and any configuration can be added. You can also.

Further, for example, the sealed device of the present invention may be combined with any one of the configurations of the first to fifth embodiments.
Further, the piezoelectric vibrator and the discharge lamp according to the embodiment may be combined with any one of the configurations of the first to fifth embodiments.
Moreover, in the manufacturing method of the sealing type device concerning each said embodiment, arbitrary processes can also be added as needed.

  In addition, the manufacturing method of the sealing type device of this invention can be applied to manufacture of any sealing type device, as long as it has the junction part which needs airtight sealing. Specifically, in addition to the actuator, the piezoelectric vibrator, and the discharge lamp described above, for example, a fluorescent lamp, a light emitting diode, a light emitting element such as a semiconductor laser, a liquid crystal display element, an organic EL element, an inorganic EL element, a plasma display, an electric display Display elements such as electrophoretic display elements, piezoelectric elements such as surface acoustic wave elements (SAW devices), imaging elements such as charge coupled devices (CCD) and complementary metal oxide semiconductors (CMOS), acceleration sensors, angular velocity sensors Various sensors such as pressure sensors, wavelength tunable filters, MEMS (Micro Electro Mechanical Systems) such as biosensors, optical connectors, optical communication devices such as optical modulators, semiconductor elements such as IC packages, ID tags, Examples include recording media such as IC cards, wristwatches, and medical instruments that enclose any gas or liquid as a stored item. It is.

Next, specific examples of the present invention will be described.
1. Manufacture of actuator (Example 1)
First, a support 3, a support 4 (both made of borosilicate glass), and a base 2 (made of silicon) shown in FIG. 13 were prepared.
Subsequently, these were accommodated in the chamber of the plasma polymerization apparatus shown in FIG. 12, and surface treatment by oxygen plasma was performed.
Next, a plasma polymerization film (bonding film) having an average thickness of 200 nm was formed on the surface of the upper surface of the support 3, the lower surface of the support 4, and the upper and lower surfaces of the substrate 2. The film forming conditions are as shown below.

<Film formation conditions>
-Source gas composition: Octamethyltrisiloxane-Source gas flow rate: 10 sccm
Carrier gas composition: Argon Carrier gas flow rate: 10 sccm
・ High frequency power output: 100W
-Chamber pressure: 1 Pa (low vacuum)
・ Processing time: 15 minutes ・ Substrate temperature: 20 ° C.
The plasma polymerized film thus formed is composed of a polymer of octamethyltrisiloxane (raw material gas), and includes a Si skeleton including a siloxane bond and a random atomic structure, and an alkyl group (desorbed). Group).

Next, the obtained plasma polymerization film was irradiated with ultraviolet rays under the following conditions.
<Ultraviolet irradiation conditions>
-Atmospheric gas composition: Air (air)
・ Atmospheric gas temperature: 20 ℃
・ Atmospheric gas pressure: Atmospheric pressure (100 kPa)
UV wavelength: 172 nm
・ UV irradiation time: 5 minutes

Next, 1 minute after irradiation with ultraviolet rays, the support 3, the substrate 2, and the support 4 were bonded together in this order so that the plasma polymerization films were in close contact with each other. Thereby, an actuator was obtained. This bonding was performed in a helium gas atmosphere.
Next, the obtained actuator was heated at 80 ° C. while being compressed at 3 MPa, and maintained for 15 minutes. Thereby, the joint strength of the actuator was improved.
In this example, 100 actuators were manufactured by the above method.

(Example 2)
First, in the same manner as in Example 1, a support 3, a support 4 (both made of borosilicate glass), and a substrate 2 (made of silicon) were prepared, and surface treatment was performed on each.
Next, a bonding film (average thickness of 100 nm) in which hydrogen atoms were introduced into ITO was formed on the surfaces of the upper surface of the support 3, the lower surface of the support 4, and the upper and lower surfaces of the substrate 2. . The film forming conditions are as shown below.

<Ion beam sputtering deposition conditions>
・ Target: ITO
・ Vacuum ultimate vacuum: 2 × 10 ⁻⁶ Torr
-Pressure in the chamber during film formation: 1 × 10 ⁻³ Torr
・ Hydrogen gas flow rate: 60 sccm
・ Temperature in chamber: 20 ℃
・ Ion beam acceleration voltage: 600V
Voltage applied to the grid on the ion generation chamber side: + 400V
Applied voltage to grid on chamber side: -200V
・ Ion beam current: 200 mA
-Gas species supplied to the ion generation chamber: Kr gas-Processing time: 20 minutes The bonding film formed in this manner is composed of ITO with hydrogen atoms introduced, and metal atoms (indium and Tin), an oxygen atom bonded to the metal atom, and a leaving group (hydrogen atom) bonded to at least one of the metal atom and the oxygen atom.

Next, the obtained bonding film was irradiated with ultraviolet rays under the following conditions.
<Ultraviolet irradiation conditions>
・ Atmosphere gas composition: Nitrogen gas ・ Atmosphere gas temperature: 20 ° C.
・ Atmospheric gas pressure: Atmospheric pressure (100 kPa)
UV wavelength: 172 nm
・ UV irradiation time: 5 minutes

Next, the support 3, the substrate 2, and the support 4 were bonded together in this order so that the bonding films were in close contact with each other one minute after irradiation with ultraviolet rays. Thereby, an actuator was obtained. This bonding was performed in a helium gas atmosphere.
Next, the obtained actuator was heated at 80 ° C. while being compressed at 3 MPa, and maintained for 15 minutes. Thereby, the joint strength of the actuator was improved.
In this example, 100 actuators were manufactured by the above method.

Example 3
First, in the same manner as in Example 1, a support 3, a support 4 (both made of borosilicate glass), and a substrate 2 (made of silicon) were prepared, and surface treatment was performed on each.
Next, the raw material is 2,4-pentadionate-copper (II) on the upper surface of the support 3, the lower surface of the support 4, and the upper and lower surfaces of the substrate 2, and the MOCVD method is used. Thus, a bonding film having an average thickness of 100 nm was formed. The film forming conditions are as shown below.

<Film formation conditions>
・ Atmosphere in the chamber: Nitrogen gas + Hydrogen gas ・ Organic metal material (raw material): 2,4-pentadionate-copper (II)
・ Flow rate of organometallic material: 1 sccm
・ Carrier gas: Nitrogen gas ・ Hydrogen gas flow rate: 0.2 sccm
・ Vacuum ultimate vacuum: 2 × 10 ⁻⁶ Torr
-Pressure in the chamber during film formation: 1 × 10 ⁻³ Torr
-Temperature of substrate holder: 275 ° C
Treatment time: 10 minutes The bonding film formed in this way contains metal atoms and copper atoms, and is one of the organic substances contained in 2,4-pentadionate-copper (II) as a leaving group. The part remains.

Next, the obtained bonding film was irradiated with ultraviolet rays under the following conditions.
<Ultraviolet irradiation conditions>
・ Atmosphere gas composition: Nitrogen gas ・ Atmosphere gas temperature: 20 ° C.
・ Atmospheric gas pressure: Atmospheric pressure (100 kPa)
UV wavelength: 172 nm
・ UV irradiation time: 5 minutes

Next, the support 3, the substrate 2, and the support 4 were bonded together in this order so that the bonding films were in close contact with each other one minute after irradiation with ultraviolet rays. Thereby, an actuator was obtained. This bonding was performed in a helium gas atmosphere.
Next, the obtained actuator was heated at 120 ° C. while being compressed at 10 MPa, and maintained for 15 minutes. Thereby, the joint strength of the actuator was improved.
In this example, 100 actuators were manufactured by the above method.

(Comparative example)
100 actuators were prepared in the same manner as in Example 1 except that the support 3, the support 4 (both made of borosilicate glass), and the base 2 (made of silicon) were prepared and joined by anodic bonding. Manufactured.
The anodic bonding was performed in a helium gas atmosphere.

2. Evaluation of Actuators The airtightness of the actuators obtained in each Example and Comparative Example was evaluated.
The evaluation of airtightness was performed based on the “electric / electronic-sealing (airtightness) test method” defined in JIS C 60068-2-17.
As a result, in the actuators obtained in each example, no leak was observed in all 100 samples.
In contrast, in the actuator obtained in the comparative example, leakage was observed in three samples.

It is a top view (internal perspective view) which shows 1st Embodiment of an actuator as an example of the sealing type device of this invention. It is the sectional view on the AA line in FIG. It is a top view which shows arrangement | positioning of the piezoelectric material of the actuator shown in FIG. It is a figure which shows an example of the alternating voltage to apply. It is a graph which shows the frequency of the applied alternating voltage, and the resonance curve of the 1st mass part and the 2nd mass part. It is the elements on larger scale which show the state before energy provision of the joining film with which the actuator concerning 1st Embodiment is provided. It is the elements on larger scale which show the state after the energy provision of the joining film with which the actuator concerning 1st Embodiment is provided. It is a figure (longitudinal sectional view) for demonstrating the manufacturing method of the actuator concerning 1st Embodiment. It is a figure (longitudinal sectional view) for demonstrating the manufacturing method of the actuator concerning 1st Embodiment. It is a figure (longitudinal sectional view) for demonstrating the manufacturing method of the actuator concerning 1st Embodiment. It is a figure (longitudinal sectional view) for demonstrating the manufacturing method of the actuator concerning 1st Embodiment. It is a longitudinal cross-sectional view which shows a plasma polymerization apparatus typically. It is a figure (longitudinal sectional drawing) for demonstrating the manufacturing method of the actuator concerning 2nd Embodiment. It is a figure (longitudinal sectional drawing) for demonstrating the manufacturing method of the actuator concerning 3rd Embodiment. It is the elements on larger scale which show the state before the energy provision of the bonding film with which the actuator concerning 4th Embodiment is provided. It is the elements on larger scale which show the state after the energy provision of the joining film with which the actuator concerning 4th Embodiment is provided. It is a longitudinal cross-sectional view which shows typically the film-forming apparatus used for preparation of the joining film concerning 4th Embodiment. It is a schematic diagram which shows the structure of the ion source with which the film-forming apparatus shown in FIG. 17 is provided. In 5th Embodiment, it is a longitudinal cross-sectional view which shows typically the film-forming apparatus used for preparation of a joining film | membrane. It is a longitudinal cross-sectional view which shows the piezoelectric vibrator formed by applying the sealing type device of this invention. It is a longitudinal cross-sectional view which shows the discharge lamp formed by applying the sealing type device of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Actuator 2 ... Base | substrate 21, 22 ... 1st mass part 21a, 22a ... End part 23 ... 2nd mass part 231 ... Light reflection part 23a ... End part 24 ... Support part 25 …… First elastic connecting portion 26 …… Second elastic connecting portion 27 …… Rotation center shafts 28, 29 …… Recess 3 …… Support 31… Recess 32 …… Piezoelectric 35 …… Surface 301 …… Si skeleton 302... Siloxane bond 303... Leaving group 304... Active hand 4 .. support 5 .. substrate 51 .. recess 6 .. resist mask 7 .. metal mask 8. , 811, 812, 821, 822... Bonding film 9 .. Substrate L ₁ , L ₂ , L ₃ ... Distance 10... Piezoelectric vibrator 11. Lids 141, 142 ... Electrodes 15 ... Discharge lamp 1 ... Arc tube 17, 18 ... Electrode 19 ... Bonding film 100 ... Plasma polymerization apparatus 101 ... Chamber 102 ... Ground wire 103 ... Supply port 104 ... Exhaust port 130 ... First electrode 139 ... Electrostatic chuck 140 …… Second electrode 170 …… Pump 171 …… Pressure control mechanism 180 …… Power supply circuit 182 …… High frequency power supply 183 …… Matching box 184 …… Wiring 190 …… Gas supply unit 191 …… Liquid storage 192 …… Vaporizer 193 …… Gas cylinder 194 …… Piping 195 …… Diffusion plate 200 …… Deposition device 211 …… Chamber 212 …… Substrate holder 215 …… Ion source 216 …… Target 217 …… Target holder 219… ... gas supply source 220 ... first shutter 221 ... second shutter 230 ... exhaust means 231 ... exhaust line 232 ... pump 233 ... valve 250 ... opening 253 ... grid 254 ... grid 255 ... magnet 256 ... ion generation chamber 257 ... filament 260 ... gas supply means 261 ... gas supply line 262 …… Pump 263 …… Valve 264 …… Gas cylinder 400 …… Deposition device 411 …… Chamber 412 …… Substrate holder 421 …… Shutter 430 …… Exhaust means 431 …… Exhaust line 432 …… Pump 433 …… Valve 460… ………… Organic metal material supply means 461 …… Gas supply line 462 …… Reservoir 463 …… Valve 464 …… Pump 465 …… Gas cylinder 470 …… Gas supply means 471 …… Gas supply line 473 …… Valve 474 …… Pump 475 ...... Gas cylinder

Claims (30)

And a bonding film including a substrate, a Si skeleton having a random atomic structure including a siloxane (Si-O) bond, and a leaving group bonded to the Si skeleton, provided on the substrate. 1 structure, a second structure capable of forming a closed space inside by being bonded to the first structure via the bonding film, and a device housed in the closed space A process to prepare;
A step of desorbing the leaving group from the Si skeleton by applying energy to the bonding film, and exhibiting adhesiveness in the bonding film;
The first structure and the second structure are bonded together so that the bonding film and the surface of the second structure are in close contact, and the closed space in which the device is stored is hermetically sealed. A method of manufacturing a sealed device. And a bonding film including a substrate, a Si skeleton having a random atomic structure including a siloxane (Si-O) bond, and a leaving group bonded to the Si skeleton, provided on the substrate. 1 structure, a second structure capable of forming a closed space inside by being bonded to the first structure via the bonding film, and a device housed in the closed space A process to prepare;
The temporary structure having the closed space in which the device is accommodated by superimposing the first structure and the second structure so that the bonding film and the surface of the second structure are in close contact with each other. Obtaining a joined body; and
By applying energy to the bonding film in the temporary bonded body, the leaving group is desorbed from the Si skeleton, and the bonding film is made to exhibit adhesiveness. A method of manufacturing a sealed device, comprising: joining a second structure and hermetically sealing the closed space.   3. The sealing according to claim 1, wherein the sum of the content ratio of Si atoms and the content ratio of O atoms among atoms excluding H atoms from all atoms constituting the bonding film is 10 to 90 atomic%. Type device manufacturing method.   The method for manufacturing a sealed device according to any one of claims 1 to 3, wherein an abundance ratio of Si atoms to O atoms in the bonding film is 3: 7 to 7: 3.   The method for manufacturing a sealed device according to claim 1, wherein the crystallinity of the Si skeleton is 45% or less.   The leaving group includes an H atom, a B atom, a C atom, an N atom, an O atom, a P atom, an S atom, and a halogen atom, or an atomic group arranged so that each of these atoms is bonded to the Si skeleton. The method for manufacturing a sealed device according to any one of claims 1 to 5, comprising at least one selected from the group consisting of:   The method for producing a sealed device according to claim 6, wherein the leaving group is an alkyl group.   The method for manufacturing a sealed device according to claim 1, wherein the bonding film is formed by a plasma polymerization method.   The method for manufacturing a sealed device according to claim 8, wherein the bonding film is composed of polyorganosiloxane as a main material.   The method of manufacturing an encapsulated device according to claim 9, wherein the polyorganosiloxane is mainly composed of a polymer of octamethyltrisiloxane.   The method for manufacturing a sealed device according to claim 1, wherein an average thickness of the bonding film is 1-1000 nm. A substrate, a bonding film including a metal atom, an oxygen atom bonded to the metal atom, and a leaving group bonded to at least one of the metal atom and the oxygen atom. A first structure that includes the first structure, a second structure that can form a closed space inside by being bonded to the first structure via the bonding film, and a device that is housed in the closed space And a process of preparing
Applying energy to the bonding film to desorb the leaving group from at least one of the metal atom and the oxygen atom, and exhibit adhesiveness in the bonding film;
The first structure and the second structure are bonded together so that the bonding film and the surface of the second structure are in close contact, and the closed space in which the device is stored is hermetically sealed. A method of manufacturing a sealed device. A first structure including a base material, and a bonding film including a metal atom and a leaving group composed of an organic component provided on the base material; and the first structure through the bonding film. Preparing a second structure that can form a closed space inside by being joined to the structure, and a device housed in the closed space;
A step of desorbing the leaving group from the bonding film by applying energy to the bonding film, and causing the bonding film to exhibit adhesiveness;
The first structure and the second structure are bonded together so that the bonding film and the surface of the second structure are in close contact, and the closed space in which the device is stored is hermetically sealed. A method of manufacturing a sealed device.   The method for manufacturing a sealed device according to claim 1, wherein the bonding film is a solid that does not have fluidity.   The method for manufacturing a sealed device according to any one of claims 1 to 14, wherein a surface of the base material including the bonding surface is previously subjected to a surface treatment for improving adhesion with the bonding film.   The method of manufacturing a sealed device according to claim 15, wherein the surface treatment is a plasma treatment.   The method for manufacturing a sealed device according to claim 1, further comprising an intermediate layer between the base material and the bonding film.   The method for manufacturing a sealed device according to claim 17, wherein the intermediate layer is configured using an oxide-based material as a main material.   The energy is applied by at least one of a method of irradiating the bonding film with energy rays, a method of heating the bonding film, and a method of applying a compressive force to the bonding film. 19. A method for producing a sealed device according to any one of 18 above.   The method of manufacturing an encapsulated device according to claim 19, wherein the energy rays are ultraviolet rays having a wavelength of 126 to 300 nm.   The temperature of the said heating is 25-100 degreeC, The manufacturing method of the sealing type device of Claim 19 or 20.   The method for manufacturing a sealed device according to any one of claims 19 to 21, wherein the compressive force is 0.2 to 10 MPa.   The method for manufacturing a sealed device according to any one of claims 1 to 22, wherein the closed space is hermetically sealed under reduced pressure or in the presence of an inert gas. 24. The method for manufacturing a sealed device according to claim 23, wherein the pressure under reduced pressure is 1 × 10 ⁻³ to 1 × 10 ³ Pa.   The method of manufacturing a sealed device according to any one of claims 1 to 24, wherein the surface of the second structure is subjected to a surface treatment for improving adhesion with the bonding film.   The surface of the second structure is composed of at least one group or substance selected from the group consisting of a functional group, a radical, a ring-opening molecule, an unsaturated bond, a halogen, and a peroxide. 26. A method for producing a sealed device according to any one of 25. The second structure has a bonding film similar to the bonding film,
The method for manufacturing a sealed device according to any one of claims 1 to 24, wherein the first structure is bonded to the second structure so that the bonding films are in close contact with each other.   The sealing according to any one of claims 1 to 27, further comprising a step of performing a process of increasing a bonding strength between the first structure and the second structure after the closed space is hermetically sealed. Type device manufacturing method.   The step of increasing the bonding strength includes a method of heating a sealed device formed by bonding the first structure and the second structure, and applying a compressive force to the sealed device. The method for manufacturing an encapsulated device according to claim 28, wherein the method is performed by at least one of the following methods.   30. A sealed device manufactured by the method for manufacturing a sealed device according to claim 1.

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