JP2009130162A - Method of bonding electronic component and bonded structure - Google Patents

Method of bonding electronic component and bonded structure Download PDF

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JP2009130162A
JP2009130162A JP2007304065A JP2007304065A JP2009130162A JP 2009130162 A JP2009130162 A JP 2009130162A JP 2007304065 A JP2007304065 A JP 2007304065A JP 2007304065 A JP2007304065 A JP 2007304065A JP 2009130162 A JP2009130162 A JP 2009130162A
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bonding
electrodes
electronic component
resin
circuit forming
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JP2009130162A5 (en
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Kentaro Nishiwaki
健太郎 西脇
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Panasonic Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061Disposition
    • H01L2224/06102Disposition the bonding areas being at different heights
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/1401Structure
    • H01L2224/1403Bump connectors having different sizes, e.g. different diameters, heights or widths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/8184Sintering
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress

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Abstract

<P>PROBLEM TO BE SOLVED: To solve a problem in a method of bonding and a bonded structure using a conventional material of a metal nano paste, that a porous bonded structure is formed by voids generated in a bonded part with heating and the bonded strength becomes low, consequently giving low credibility, associated with the breakage of a bonded part caused by thermal stress or the like. <P>SOLUTION: The bonded strength is increased by disposing a lamination of a bonding material formed by a metal nano paste material on an electrode of a circuit forming body, preliminary disposing a resin for assisting the reinforcement of bonding strength between electrodes of an electronic component or the circuit forming body, and constituting the bonded structure by integrally heating so that the resin can penetrate into voids generated inside the lamination body of the bonding material while melting and curing the resin all over the surface of the electronic component. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、セラミックやポリイミド等の回路形成体上の電極に電子部品が搭載された接合構造体及び接合構造体の接合方法に関する。   The present invention relates to a joining structure in which an electronic component is mounted on an electrode on a circuit forming body such as ceramic or polyimide, and a joining method of the joining structure.

半導体素子等の電子部品をセラミックやポリイミド基材等の基板上に実装する方法として、従来のはんだ接合や突起電極を用いた直接接合方法に代わり、近年金属ナノ粒子を接合材料として、加熱・焼成して接合する方法が注目されている。   As a method for mounting electronic components such as semiconductor elements on a substrate such as a ceramic or polyimide substrate, in recent years, instead of the conventional direct bonding method using solder bonding or protruding electrodes, metal nanoparticles are used as a bonding material for heating and firing. Thus, the method of joining is attracting attention.

この技術では平均粒径100nm以下の、例えばAu、Ag、Cu等の金属微粒子(以下金属ナノ粒子と記載)と、この金属ナノ粒子の周囲に粒子の凝集防止を目的とした、有機化合物で被覆した分散剤と、溶剤中に金属ナノ粒子を分散させたペースト材料(以下金属ナノペースト材料と記載)を、2つの部材の接合部に介在させて加熱・焼成して接合させる。   In this technique, metal fine particles such as Au, Ag, and Cu having an average particle diameter of 100 nm or less (hereinafter referred to as metal nanoparticles) are coated with an organic compound for the purpose of preventing particle aggregation around the metal nanoparticles. The dispersed agent and a paste material in which metal nanoparticles are dispersed in a solvent (hereinafter referred to as a metal nanopaste material) are bonded to each other by heating and firing through a joint between two members.

この金属ナノ粒子は、材料の微小化により、バルク材料に比べて表面活性度が高く融点が低いため、低温での金属間の結合が可能である。さらに結合してサイズが大きくなると、バルク材料同等の高い融点を有する性質を有する。従って、今後、電子部品の実装時の熱ストレス低減及び実装後の耐熱温度向上(例えば、Au材料の融点は約1300℃)が要求される幅広い製品への適用が期待される。   The metal nanoparticles have a higher surface activity and a lower melting point than the bulk material due to the miniaturization of the material, and therefore, bonding between metals at a low temperature is possible. When the size is further increased by bonding, it has a property of having a high melting point equivalent to that of the bulk material. Accordingly, in the future, application to a wide range of products that are required to reduce thermal stress during mounting of electronic components and to improve the heat-resistant temperature after mounting (for example, the melting point of Au material is about 1300 ° C.) is expected.

金属ナノ粒子及び金属ナノペースト材料を接合材料として用いた、従来の電子部品の実装方法を図8に示す。図8(a1)、図8(b1)、図8(c1)は基板の平面図、図8(a2)、図8(b2)、図8(c2)は、夫々、図8(a1)、図8(b1)、図8(c1)に対応する断面図である。全面の箇所の例は、図8(a1)に示すC−C面である。   FIG. 8 shows a conventional electronic component mounting method using metal nanoparticles and metal nanopaste materials as bonding materials. 8 (a1), FIG. 8 (b1), and FIG. 8 (c1) are plan views of the substrate, and FIG. 8 (a2), FIG. 8 (b2), and FIG. 8 (c2) are FIG. 8 (a1), FIG. It is sectional drawing corresponding to FIG.8 (b1) and FIG.8 (c1). An example of the entire surface is the CC plane shown in FIG.

まず、電極が形成された基材を用意し(図8(a1)と図8(a2))、次に電子部品上の電極に対応した位置に金属ナノ粒子を含んだ金属ナノペースト材料を用いて接合材料積層体9を形成する(図8(b1)と図8(b2))、次に電子部品3を前記基材上の接合材料積層体9に対向させて電子部品3を搭載し、熱等のエネルギーを与えることにより、金属ナノ粒子の周囲を被覆した分散剤や金属ナノペースト材料とするための溶剤を分解及び揮発して、金属ナノ粒子を含んだ前記接合材料積層体9を結合・硬化させて電子部品3上の電極と基材上の電極とを接合させる(図8(c1)と図8(c2))。   First, a substrate on which electrodes are formed is prepared (FIGS. 8A1 and 8A2), and then a metal nanopaste material containing metal nanoparticles is used at positions corresponding to the electrodes on the electronic component. Then, the bonding material laminate 9 is formed (FIG. 8 (b1) and FIG. 8 (b2)). Next, the electronic component 3 is mounted so as to face the bonding material laminate 9 on the substrate, By applying energy such as heat, the dispersant for coating the periphery of the metal nanoparticles and the solvent for forming the metal nano paste material are decomposed and volatilized to bond the bonding material laminate 9 containing the metal nanoparticles. Curing is performed to join the electrode on the electronic component 3 and the electrode on the substrate (FIG. 8 (c1) and FIG. 8 (c2)).

また、従来の電子部品3の接合構造体の接合部構造は、図8(c2)に示すように、電子部品上の電極、接合部材、基板上の電極の順に層状に接続・構成されている。   Further, as shown in FIG. 8 (c2), the joint structure of the joint structure of the conventional electronic component 3 is connected and configured in the order of the electrode on the electronic component, the joining member, and the electrode on the substrate. .

この金属ナノ粒子及び金属ナノペースト材料を用いた接合方法に関する技術としては、例えば特許文献1に開示された技術が知られている。
特開2005−136399号公報
As a technique relating to a bonding method using the metal nanoparticles and the metal nanopaste material, for example, a technique disclosed in Patent Document 1 is known.
JP 2005-136399 A

しかしながら、従来の電子部品の実装方法では以下に示す、金属ナノペースト材料固有の課題がある。   However, the conventional electronic component mounting method has the following problems specific to the metal nanopaste material.

図9(a)〜図9(d)に金属ナノペースト材料の熱処理の変化の様子を示す。金属ナノペースト材料には、金属ナノ粒子6と、溶剤8と、分散剤7が存在する。   9A to 9D show changes in the heat treatment of the metal nanopaste material. In the metal nanopaste material, metal nanoparticles 6, a solvent 8, and a dispersant 7 are present.

図9(a)から図9(d)へ向かって熱処理が進行する。図9(a)の第1段階では、金属ナノ粒子6に分散剤7がしっかり付着している。図9(b)の第2段階では、一部の分散剤7が、金属ナノ粒子6から離散している。図9(c)の第3段階では、分散剤7が、金属粒子から完全に離散し、金属ナノ粒子6同士が接触し、かつ、溶融している。図9(d)の第4段階では、金属結合が完成する。   Heat treatment proceeds from FIG. 9A to FIG. 9D. In the first stage of FIG. 9A, the dispersant 7 is firmly attached to the metal nanoparticles 6. In the second stage of FIG. 9B, some of the dispersant 7 is separated from the metal nanoparticles 6. In the third stage of FIG. 9C, the dispersant 7 is completely separated from the metal particles, the metal nanoparticles 6 are in contact with each other, and are melted. In the fourth stage of FIG. 9D, the metal bond is completed.

ここで、金属ナノペースト材料5を加熱・焼成して金属粒子を結合する際に、金属ナノペースト材料5に含まれる分散剤7や溶剤8の分解及び揮発により、その集合体(接合材料)の内部及びその外周表面上にボイド(空隙)10を発生し(図9(d)、図8(C2))、最終的に接合部に内在することとなり、接合強度低下及び信頼性低下に繋がる。図10に、実際の実装構造体の断面を示す。ボイド10が連続し、接続不良となる。   Here, when the metal nano paste material 5 is heated and baked to bond the metal particles, the aggregate (joining material) of the aggregate (bonding material) is decomposed and volatilized by the dispersant 7 and the solvent 8 contained in the metal nano paste material 5. Voids (voids) 10 are generated inside and on the outer peripheral surface (FIG. 9 (d), FIG. 8 (C2)) and finally exist in the joint, leading to a decrease in bonding strength and reliability. FIG. 10 shows a cross section of an actual mounting structure. The voids 10 are continuous, resulting in poor connection.

さらに、これまでのバルク金属(突起電極)を用いた金属接合においては、電子部品を実装後に後入れで封止樹脂により補強する方法が採用される。しかしながら、金属ナノペースト材料5を用いた接合方法においては、金属ナノ粒子6自体が微粒子の為にそれらを積層した接合材料自体の厚みが従来と比較して低く、つまり回路形成体1と電子部品3間のギャップが狭くなるので、後入れの樹脂で電子部品3の内外に対して均一に封止することが困難となる課題を有する。   Furthermore, in the conventional metal bonding using a bulk metal (projection electrode), a method in which an electronic component is reinforced by sealing resin after mounting after mounting is employed. However, in the bonding method using the metal nanopaste material 5, the metal nanoparticle 6 itself is a fine particle, so that the thickness of the bonding material itself in which the metal nanoparticles 6 are laminated is lower than that of the prior art. Since the gap between the three parts becomes narrow, there is a problem that it is difficult to uniformly seal the inside and outside of the electronic component 3 with a resin added later.

また、図11に、従来のナノペーストを用いたときの電子部品3と回路形成体1との接続時の断面構造を示す。ナノペースト材料は、ポーラスなため、粘度が低く、電子部品の搭載時に接合材料である金属ナノペースト材料が押し広げられ、電極間で短絡を生じやすくなるという課題を有する。   FIG. 11 shows a cross-sectional structure when the electronic component 3 and the circuit forming body 1 are connected when a conventional nanopaste is used. Since the nanopaste material is porous, the viscosity is low, and the metal nanopaste material that is a bonding material is spread when an electronic component is mounted, thereby causing a problem that a short circuit is easily generated between the electrodes.

また、従来の電子部品の接合構造体においては、電子部品上の電極、接合部材、回路形成体上の電極の順に層状に接続されており、特に電子部品3と回路形成体1との熱膨張係数が異なる場合には、製品環境の熱ストレスにより、接合部が破壊され、断線が生じやすいという課題を有していた。   Further, in the conventional electronic component bonding structure, the electrodes on the electronic component, the bonding member, and the electrodes on the circuit forming body are connected in the order of layers, and in particular, the thermal expansion between the electronic component 3 and the circuit forming body 1. When the coefficients are different, there is a problem that the joint is broken due to thermal stress in the product environment, and disconnection is likely to occur.

上記課題を解決するために、本発明は以下のように構成される。   In order to solve the above problems, the present invention is configured as follows.

本発明における請求項1に記載の発明として、複数の電極を有する回路形成体と、
上記回路形成体の複数の電極に各々対向して配置された複数の電極を有する電子部品と、
上記回路形成体と上記電子部品を接続する接合材料と、
を備えた接合構造体において、
前記回路形成体と前記電子部品とを接続する電極間に配置された接合材料中に、接合強度補強用の樹脂を有していることを特徴とする接合構造体を用いる。
As the invention according to claim 1 of the present invention, a circuit formed body having a plurality of electrodes,
An electronic component having a plurality of electrodes disposed to face the plurality of electrodes of the circuit forming body,
A bonding material for connecting the circuit forming body and the electronic component;
In a bonded structure comprising:
A bonding structure characterized by having a bonding strength reinforcing resin in a bonding material disposed between electrodes connecting the circuit forming body and the electronic component.

本発明における請求項2に記載の発明として、請求項1の発明において、前記接合強度補強用の樹脂は、接合部である電極の隙間部、及び前記接合材料内部の空隙部に混在している接合構造体を用いる。   As invention of Claim 2 in this invention, in the invention of Claim 1, the said resin for joint strength reinforcement is mixed in the clearance gap part of the electrode which is a junction part, and the space | gap part inside the said joining material. A junction structure is used.

本発明における請求項3に記載の発明として、請求項1または2の発明において、前記接合強度補強用の樹脂は、非導電性の性質を有する樹脂で構成される接合構造体を用いる。   According to a third aspect of the present invention, in the first or second aspect of the present invention, the bonding strength reinforcing resin is a bonding structure formed of a resin having non-conductive properties.

本発明における請求項4に記載の発明として、請求項1ないし3の発明において、前記接合強度補強用の樹脂は、熱硬化性或いは熱可塑性の性質を有する樹脂で構成される接合構造体を用いる。   As a fourth aspect of the present invention, in the first to third aspects of the present invention, the bonding strength reinforcing resin is a bonding structure made of a resin having thermosetting or thermoplastic properties. .

本発明における請求項5に記載の発明として、請求項1ないし4の発明において、
前記接合強度補強用の樹脂の厚さは、前記回路形成体の複数の電極と、前記接合材料とを
合算した厚さよりも薄い構造を有している接合構造体をもちいる。
As invention of Claim 5 in this invention, in invention of Claims 1 thru | or 4,
The thickness of the bonding strength reinforcing resin is a bonding structure having a structure thinner than the total thickness of the plurality of electrodes of the circuit forming body and the bonding material.

本発明における請求項6に記載の発明として、請求項1ないし5の発明において、
前記接合材料は、平均直径が100nm以下の金属からなる超微粒子を有機化合物から成る分散剤で被覆して、溶媒中に分散させてなる金属ナノペースト材料を用いて積層させた構造を有する接合構造体を用いる。
As invention of Claim 6 in this invention, in invention of Claim 1 thru | or 5,
The bonding material has a structure in which ultrafine particles made of a metal having an average diameter of 100 nm or less are coated with a dispersing agent made of an organic compound and laminated using a metal nanopaste material dispersed in a solvent. Use the body.

本発明における請求項7に記載の発明として、請求項1の発明において、前記接合材料において、前記金属ナノペースト材料を積層した厚みは、10μm以下で構成された接合構造体を用いる。   As an invention described in claim 7 of the present invention, in the invention of claim 1, a bonding structure is used in which the metal nanopaste material is laminated with a thickness of 10 μm or less in the bonding material.

本発明における請求項8に記載の発明として
複数の電極を有する回路形成体と、
上記回路形成体の複数の電極に各々対向して配置された複数の電極を有する電子部品と、
上記回路形成体と上記電子部品とを接続する接合材料と、
を備えた電子部品の接合構造体の接合方法において、
複数の電極を有する前記回路形成体を準備し、
前記回路形成体の複数の電極上に、平均直径が100nm以下の金属からなる超微粒子を含有した金属ナノペースト材料を用いて接合材料としての積層体を形成し、
前記回路形成体の電極同士の間、或いは前記回路形成体の複数の電極に対抗する、電子部品上の電極同士の間に、前記接合補強用の樹脂を前記接合材料の高さよりも低く形成し、
前記積層体が流れ出ないように、前記回路形成体に前記電子部品を向かい合わせ、
加熱、加圧或いはそれらの組み合わせにより前記積層体を硬化する際に、金属ナノペースト材料中に含まれる分散剤が揮発した際に発生する前記積層体の空隙部に、前記接合補強用樹脂を溶融・硬化させて、混在させながら電子部品の実装を一括して行うことを特徴とする接合構造体の接合方法をもちいる。
A circuit forming body having a plurality of electrodes as an invention according to claim 8 of the present invention,
An electronic component having a plurality of electrodes disposed to face the plurality of electrodes of the circuit forming body,
A bonding material for connecting the circuit formed body and the electronic component;
In the joining method of the joint structure of an electronic component comprising:
Preparing the circuit forming body having a plurality of electrodes;
A laminate as a bonding material is formed on the plurality of electrodes of the circuit forming body using a metal nanopaste material containing ultrafine particles made of a metal having an average diameter of 100 nm or less,
The bonding reinforcing resin is formed lower than the height of the bonding material between the electrodes of the circuit forming body or between the electrodes on the electronic component that opposes the plurality of electrodes of the circuit forming body. ,
The electronic component is faced to the circuit forming body so that the laminated body does not flow out,
When the laminate is cured by heating, pressurization, or a combination thereof, the bonding reinforcing resin is melted in the voids of the laminate that are generated when the dispersant contained in the metal nanopaste material volatilizes. Uses a bonding structure bonding method characterized in that the electronic components are mounted together while being cured and mixed.

本発明における請求項9に記載の発明として複数の電極を有する回路形成体と、
上記回路形成体の複数の電極に各々対向して配置された複数の電極を有する電子部品と、
上記回路形成体と上記電子部品とを接続する接合材料と、を備えた電子部品の接合構造体の接合方法において、複数の電極を有する前記回路形成体を準備し、前記回路形成体の複数の電極上に、平均直径が100nm以下の金属からなる超微粒子を含有した金属ナノペースト材料を用いて接合材料としての積層体を形成し、前記回路形成体の電極同士の間、或いは前記回路形成体の複数の電極に対抗する、電子部品上の電極同士の間に、前記接合補強用の樹脂を前記接合材料の高さよりも低く形成し、前記積層体が流れ出ないように、前記回路形成体に前記電子部品を向かい合わせ、加熱、加圧或いはそれらの組み合わせにより前記積層体を硬化すると共に、前記接合補強用樹脂を溶融・硬化させて、接合部の隙間部に配置させながら電子部品の実装を一括して行うことを特徴とする接合構造体の接合方法。
A circuit forming body having a plurality of electrodes as the invention according to claim 9 in the present invention,
An electronic component having a plurality of electrodes disposed to face the plurality of electrodes of the circuit forming body,
In a bonding method of a bonded structure of an electronic component comprising a bonding material for connecting the circuit formed body and the electronic component, the circuit formed body having a plurality of electrodes is prepared, and a plurality of the circuit formed body A laminate as a bonding material is formed on the electrodes using a metal nanopaste material containing ultrafine particles made of a metal having an average diameter of 100 nm or less, and between the electrodes of the circuit forming bodies or the circuit forming bodies In the circuit formation body, the resin for bonding reinforcement is formed lower than the height of the bonding material between the electrodes on the electronic component that oppose the plurality of electrodes, so that the laminated body does not flow out. The electronic parts face each other, the laminate is cured by heating, pressing, or a combination thereof, and the bonding reinforcing resin is melted and cured to be disposed in the gap portion of the bonding portion. Joining method of joining structure characterized by performing collectively implementation.

本発明にかかる接合構造体およびその接合方法によれば、金属ナノペースト材料を用いた接合方法において、接合時に発生するボイド(空隙)による接合構造体の接合強度低下の抑制および製品環境の熱ストレスを緩和し、高い信頼性で電子部品を接合するとともに、電子部品を接合する際の接合材料の押し広がりによる金属ナノ粒子による電極間の短絡を防ぐことができる接合構造体及びその接合方法を提供することができる。また、同時に低背化する接合構造体における安定した補強構造を構成することができる。これら効果により接合構造体の信頼性を向上することができる。   According to the bonding structure and the bonding method according to the present invention, in the bonding method using the metal nanopaste material, the reduction in the bonding strength of the bonding structure due to voids (voids) generated during bonding and the thermal stress of the product environment A bonding structure and a bonding method for bonding electronic components with high reliability and capable of preventing short-circuiting between electrodes due to metal nanoparticles caused by spreading of the bonding material when bonding electronic components can do. Moreover, the stable reinforcement structure in the joining structure body which becomes low simultaneously can be comprised. These effects can improve the reliability of the bonded structure.

本発明の記述を続ける前に、添付図面において同じ部品については同じ参照符号を付している。   Before continuing the description of the present invention, the same parts are denoted by the same reference numerals in the accompanying drawings.

以下、本発明を実施するための最良の形態について、図面を参照しながら説明する。   The best mode for carrying out the present invention will be described below with reference to the drawings.

(第1実施形態)
図1(a)と図1(b)を用いて本発明の第1実施形態にかかる接合構造体18の構成を説明する。図1(a)は、断面図を示し、図1(b)は、そのBB´面での断面図である。
(First embodiment)
The configuration of the joint structure 18 according to the first embodiment of the present invention will be described with reference to FIGS. 1 (a) and 1 (b). FIG. 1A is a cross-sectional view, and FIG. 1B is a cross-sectional view along the BB ′ plane.

第1実施形態にかかる接合構造体18は、以下のように構成されている。基材となる回路形成体1と、回路形成体1上に形成された複数の電極2と、回路形成体上に形成された複数の電極2にそれぞれ対向して配置された複数の電極を有する電子部品3と、回路形成体1上の電極2及び電子部品上の電極4の両者を接合する。有機化合物で構成された分散剤でコーティングした金属ナノ粒子及び接合材料をペースト或いはインク状にするための溶剤とを含有した金属ナノペースト材料を積層して構成された接合材料積層体9と、接合材料積層体9により構成される接合部内部及び接合部以外のスペースに充填された接合強度補強用の樹脂11とを備えている。   The joint structure 18 according to the first embodiment is configured as follows. A circuit forming body 1 serving as a base material; a plurality of electrodes 2 formed on the circuit forming body 1; and a plurality of electrodes arranged to face the plurality of electrodes 2 formed on the circuit forming body. The electronic component 3 is bonded to both the electrode 2 on the circuit formed body 1 and the electrode 4 on the electronic component. A bonding material laminate 9 formed by laminating metal nano-paste material containing metal nanoparticles coated with a dispersant composed of an organic compound and a solvent for making the bonding material into a paste or ink, and bonding And a resin 11 for reinforcing joint strength filled in the joint portion constituted by the material laminate 9 and a space other than the joint portion.

回路形成体1はセラミックやポリイミド基板で構成され、回路形成体1上に配置される複数の電極は、例えば厚さ2〜3μm程度の電極(例えば、Ni/Au=1μm/1μmの電極構成)で構成されている。   The circuit formed body 1 is composed of a ceramic or polyimide substrate, and the plurality of electrodes disposed on the circuit formed body 1 are, for example, electrodes having a thickness of about 2 to 3 μm (for example, Ni / Au = 1 μm / 1 μm electrode configuration). It consists of

電子部品3上に配置される複数の電極は、例えば厚さ2〜3μm程度の電極(例えば、Ni/Au=1μm/1μmの電極構成)で構成されている。   The plurality of electrodes arranged on the electronic component 3 are configured by electrodes having a thickness of about 2 to 3 μm (for example, electrode configuration of Ni / Au = 1 μm / 1 μm), for example.

接合材料積層体9は、例えば、100nm以下の金属ナノ粒子6を含有した金属ナノペースト材料を積層して構成され、その厚みは、例えば5μm以下の厚みで構成され、この接合材料積層体9を介して電気的な接続を行うものである。   For example, the bonding material laminate 9 is configured by laminating metal nanopaste materials containing metal nanoparticles 6 of 100 nm or less, and the thickness thereof is, for example, 5 μm or less. The electrical connection is made through this.

金属ナノペースト材料に関して、金属ナノ粒子の材料としては、銀、銅、金、ニッケル、亜鉛、ビスマスからなる群から選択される、少なくとも1種類以上の金属材料で形成され、平均粒子径が1〜100nmの範囲で選択される金属ナノ粒子で構成される。さらに、この金属ナノ粒子の金属表面には、材料供給時に粒子同士の凝集を防止する為に、たとえばアミン化合物などの有機化合物による表面被覆層(分散剤)を設けている超微粒子として形成される。   Regarding the metal nanopaste material, the metal nanoparticle material is formed of at least one metal material selected from the group consisting of silver, copper, gold, nickel, zinc and bismuth, and has an average particle diameter of 1 to 1 It is composed of metal nanoparticles selected in the range of 100 nm. Further, the metal surface of the metal nanoparticle is formed as ultrafine particles provided with a surface coating layer (dispersant) made of an organic compound such as an amine compound in order to prevent the particles from aggregating when the material is supplied. .

さらに、この金属ナノ粒子をインクジェット装置などで供給するために、また、加熱した際にこのアミン化合物などの被覆分子の溶出、離脱が可能な、高沸点の一種以上の有機溶剤を含んでなる分散溶媒中に均一に分散させることでアミン化合物一種類以上が、その総和として0.1から60質量部の範囲で含有される。   Furthermore, in order to supply the metal nanoparticles with an ink jet device or the like, and when heated, a dispersion comprising one or more organic solvents having a high boiling point capable of elution and separation of coating molecules such as amine compounds. By uniformly dispersing in the solvent, one or more amine compounds are contained in the range of 0.1 to 60 parts by mass as the total.

さらに、溶剤によりペースト状にする際のこの表面被覆(分散剤)を有する金属ナノ粒子の含有量としては5wt%程度とした。この含有量については何に分散するのかによってその重量比は異なる。   Furthermore, the content of the metal nanoparticles having the surface coating (dispersing agent) when making a paste with a solvent was about 5 wt%. About this content, the weight ratio changes with what is disperse | distributed.

接合強度補強用の樹脂11は、非導電性の性質を有し、電子部品3と回路形成体1との間に配置されており、さらに、接合材料積層体9の内部に存在するボイド(空隙)10内に存在するように構成されている。   The bonding strength reinforcing resin 11 has a non-conductive property, is disposed between the electronic component 3 and the circuit forming body 1, and further has voids (voids) present inside the bonding material laminate 9. ) 10 is present.

非導電性の性質を有する樹脂11は、例えば、アクリル樹脂やエポキシ樹脂等の熱硬化性樹脂或いは熱可塑性樹脂で構成され、接着性、絶縁性、熱伝導性、低線膨張性、低弾性、耐マイグレーション性、耐熱性などの面で機能的に優れた樹脂であることが望ましい。   The resin 11 having non-conductive properties is made of, for example, a thermosetting resin or a thermoplastic resin such as an acrylic resin or an epoxy resin, and has adhesiveness, insulation, thermal conductivity, low linear expansion, low elasticity, It is desirable that the resin is functionally excellent in terms of migration resistance and heat resistance.

さらに具体的には、例えば、エポキシ系の熱硬化性樹脂を一例としてあげると、液状エポキシ樹脂を主成分とし、樹脂を硬化させる硬化剤、イオンマイグレーション等の発生を抑制するイオン交換体、カップリング剤、などからなる。また、場合によっては、シリカやアルミナ材料からなる無機フィラーを添加して、材料の粘度を調整したり、熱伝導性を向上させる手段をとることもできる。   More specifically, for example, when an epoxy thermosetting resin is taken as an example, a liquid epoxy resin is a main component, a curing agent that cures the resin, an ion exchanger that suppresses the occurrence of ion migration, a coupling, and the like. Agents, etc. In some cases, an inorganic filler made of silica or alumina material may be added to adjust the viscosity of the material or take measures to improve thermal conductivity.

本発明の第1実施形態にかかる接合構造体18によれば、図1(a)に示すように回路形成体1と電子部品3を接続する電極間に配置された接合材料積層体9との間に、接合強度補強用の樹脂11を有している。   According to the joining structure 18 according to the first embodiment of the present invention, as shown in FIG. 1A, the joining material laminate 9 disposed between the electrodes that connect the circuit forming body 1 and the electronic component 3. A resin 11 for reinforcing the bonding strength is provided therebetween.

ここで、この接合強度補強用の樹脂11の第1の構成としては、図2に示すように回路形成体1上の電極2と電子部品3上の電極4間で、接合材料積層体9間に位置する。   Here, as a first configuration of the resin 11 for reinforcing the bonding strength, as shown in FIG. 2, the bonding material laminate 9 is interposed between the electrode 2 on the circuit forming body 1 and the electrode 4 on the electronic component 3. Located in.

したがって本発明の構造によれば、実装した電子部品3と回路形成体1の密着強度を補強して接合強度を向上することができるとともに、製品環境による熱ストレスが接合部に生じても、挿入した樹脂11によりストレスを緩和し、接合部の破壊による断線を防ぐことができる。   Therefore, according to the structure of the present invention, it is possible to reinforce the adhesion strength between the mounted electronic component 3 and the circuit forming body 1 to improve the joint strength, and to insert even if thermal stress due to the product environment occurs in the joint portion. The resin 11 can relieve stress and prevent disconnection due to destruction of the joint.

また、樹脂11が接合材料積層体9間に存在することから、電子部品3を回路形成体1上に搭載する際に金属ナノ粒子6を含有する金属ナノペースト材料5が押し広がり、隣接する電極同士の短絡を防ぐことができる。このようにして電極間の接合信頼性を向上することができる。   Further, since the resin 11 is present between the bonding material laminates 9, the metal nano paste material 5 containing the metal nanoparticles 6 spreads when the electronic component 3 is mounted on the circuit forming body 1, and the adjacent electrode Short circuit between each other can be prevented. In this way, the bonding reliability between the electrodes can be improved.

さらに、接合領域に樹脂層が形成された構造の場合には、何も存在しない空気層よりも樹脂の熱伝導率が大きいために放熱性を高めることができる効果もある。さらに図示はしないが、更に樹脂内部に、例えばシリカやアルミナのような熱伝導性の高い絶縁性の微粒子を存在させることにより放熱性をより一層高めることができる。   Furthermore, in the case of the structure in which the resin layer is formed in the joining region, the heat conductivity of the resin is larger than that of the air layer in which nothing is present, so that there is an effect that heat dissipation can be improved. Further, although not shown in the figure, the heat dissipation can be further enhanced by allowing insulating fine particles having high thermal conductivity such as silica and alumina to be present inside the resin.

次に、上記接合強度補強用の樹脂11の第二の構成について説明する。図3に示すように回路形成体上の電極2と電子部品3上の電極4との間に、金属ナノ粒子6の積層体により構成された接合材料積層体9内部に存在するボイド(空隙)部10にも、接合強度補強用の樹脂11が位置する構成である。   Next, the second configuration of the resin 11 for reinforcing the bonding strength will be described. As shown in FIG. 3, voids (voids) existing inside the bonding material laminate 9 composed of a laminate of metal nanoparticles 6 between the electrode 2 on the circuit forming body and the electrode 4 on the electronic component 3. The resin 10 for reinforcing the bonding strength is also located in the portion 10.

本発明の構造によれば、回路形成体1上に電子部品3を搭載し、加熱・焼成及び加圧した際に、金属ナノペースト材料5に含まれる金属ナノ粒子6に被覆した分散剤7及び溶剤8が分解・揮発することによって生じる接合部内部のボイド(空隙)10に接合強度補強用の樹脂11を浸透させることで、接合部の接合強度をより強固なものとし、且つ製品環境による熱ストレスが接合材料積層体9に生じても、挿入した樹脂11によりストレスを緩和し、接合部の破壊による断線を防ぐことができる。   According to the structure of the present invention, when the electronic component 3 is mounted on the circuit formed body 1 and heated, fired and pressurized, the dispersant 7 coated on the metal nanoparticles 6 included in the metal nanopaste material 5 and By infiltrating the resin 11 for reinforcing the bonding strength into the voids (voids) 10 generated by the decomposition and volatilization of the solvent 8, the bonding strength of the bonding portion is made stronger and the heat generated by the product environment Even if stress is generated in the bonding material laminate 9, the stress can be relieved by the inserted resin 11, and disconnection due to destruction of the bonded portion can be prevented.

例えば、Auバルク状態の接合強度に対して、ボイド10が30から50%存在する場合には、約1/3から1/2の接合強度となるが、本発明に記載した構造では、ボイド(空隙)10によるポーラス状の接合材料積層体9に接合強度補強用の樹脂11を浸透させることで接合強度を約10から30%向上することができる。また、接合材料積層体9以外の電子部品3と回路形成体1の間にも接合強度補強用の樹脂11が充填されることになるので(本発明第1の構成)、さらに接合構造体18の接合強度向上を図ることができる。   For example, when the void 10 is 30 to 50% of the bonding strength in the Au bulk state, the bonding strength is about 1/3 to 1/2. However, in the structure described in the present invention, the void ( The bonding strength can be improved by about 10 to 30% by allowing the resin 11 for reinforcing the bonding strength to permeate into the porous bonding material laminate 9 with the gap 10). Further, since the resin 11 for reinforcing the bonding strength is also filled between the electronic component 3 other than the bonding material laminate 9 and the circuit forming body 1 (first configuration of the present invention), the bonding structure 18 is further provided. The joint strength can be improved.

また、一般的に電子部品3から発生した熱は接合部及びその周辺から熱を逃がすことになるが、より影響度の高い、電子部品上の電極4及び接合部を介して回路形成体1の電極側へ逃がす直接的な熱パスの経路となる接合部に、従来例図10のように、ボイド(空隙)10が存在する場合には、熱抵抗が高くなるために効率的な放熱構造とはなっていない。本発明の構造によれば、接合部のボイド(空隙)10部に樹脂層が浸透して混在した構造の場合には、放熱性を高めることができる効果もある。さらに図示はしないが、更に樹脂内部に電気伝導性に影響の無い範囲で、例えばシリカやアルミナのような熱伝導性の高い絶縁性の微粒子を存在させることにより放熱性をより一層高めることができる。   In general, the heat generated from the electronic component 3 releases heat from the joint and its surroundings. However, the influence of the circuit forming body 1 through the electrode 4 and the joint on the electronic component is higher. As shown in FIG. 10 in the conventional example, when a void (gap) 10 exists in the joint portion that is a direct heat path that escapes to the electrode side, the thermal resistance is increased, and thus an efficient heat dissipation structure It is not. According to the structure of the present invention, in the case of a structure in which a resin layer penetrates and mixes in 10 parts of voids (voids) of the joint part, there is an effect that heat dissipation can be improved. Further, although not shown in the figure, the heat dissipation can be further improved by allowing insulating fine particles having high thermal conductivity such as silica and alumina to exist in the resin without affecting the electrical conductivity. .

上記では、各部材の材質や寸法、或いは接合プロセスについて例を挙げて説明したが、本発明はこれに限定されるものではなく、種々な態様で変形が可能である。   In the above description, the materials and dimensions of each member and the joining process have been described by way of example. However, the present invention is not limited to this, and can be modified in various ways.

次に、図4及び図5を用いて、本発明の第1実施形態にかかる接合構造体18の電極接合方法について説明する。図4(a)から図4(f)は、本発明の第1実施形態にかかる接合構造体18の電極接合方法の手順を示す断面図である。図5は、本発明の第1実施形態にかかる接合構造体18の電極接合方法のフローチャートである。   Next, an electrode bonding method for the bonded structure 18 according to the first embodiment of the present invention will be described with reference to FIGS. FIG. 4A to FIG. 4F are cross-sectional views showing the procedure of the electrode joining method for the joined structure 18 according to the first embodiment of the present invention. FIG. 5 is a flowchart of the electrode bonding method for the bonding structure 18 according to the first embodiment of the present invention.

まず、セラミック基板或いはポリイミド基板等の回路形成体1を準備し(図4(a)、図5のS1工程)、次に回路形成体1上の電極2上に、平均粒径100nm以下の金属ナノ粒子6(一例として金属の組成をAuとする)を含有した金属ナノペースト材料5を充填・積層する(図5のS2−1工程)。引き続き金属ナノペースト材料5を乾燥させて溶剤8の大半を揮発する(図4(b)、図5のS2−2工程)。ここで、金属ナノペースト材料5とは、平均粒径が100nm程度のAuから成る金属ナノ粒子6からなり、その粒子の外周を分散剤7(有機保護膜)によってコーティングした状態で溶剤8に分散されたペースト状の材料である。これを加熱することで、ある温度になると分散剤7(有機保護膜)や溶剤8が分解・揮発して、Auの金属ナノ粒子6の表面が現れ、互いに焼結する原理を利用して接合材として機能させたものである。   First, a circuit forming body 1 such as a ceramic substrate or a polyimide substrate is prepared (FIG. 4A, step S1 in FIG. 5), and then a metal having an average particle diameter of 100 nm or less is formed on the electrode 2 on the circuit forming body 1. A metal nano paste material 5 containing nanoparticles 6 (for example, the metal composition is Au) is filled and laminated (step S2-1 in FIG. 5). Subsequently, the metal nanopaste material 5 is dried to volatilize most of the solvent 8 (FIG. 4B, step S2-2 in FIG. 5). Here, the metal nanopaste material 5 is composed of metal nanoparticles 6 made of Au having an average particle diameter of about 100 nm, and is dispersed in the solvent 8 in a state where the outer periphery of the particles is coated with a dispersant 7 (organic protective film). Pasted material. By heating this, the dispersant 7 (organic protective film) and the solvent 8 are decomposed and volatilized at a certain temperature, and the surface of the Au metal nanoparticles 6 appears and is bonded using the principle of sintering each other. It was made to function as a material.

また、金属ナノペースト材料5の充填及び積層方法については、例えばインクジェット装置12を用いれば、回路形成体上の電極2上に位置補正をした状態で、非接触でペーストを微量供給することが可能であり、この工程を何度か繰り返すことで、本発明にかかる接合材料積層体9を形成することができる。その厚みは例えば3〜5μmである。ここでは、インクジェット方法による積層方法の一例を述べたが、ペーストの粘度を調整することで、他の種々の方法が活用できることから、本発明はこれに限定されるものではなく、種々な態様で変形が可能である。   As for the method of filling and laminating the metal nanopaste material 5, for example, if the inkjet device 12 is used, a small amount of paste can be supplied in a non-contact manner with the position corrected on the electrode 2 on the circuit formed body. And by repeating this process several times, the bonding material laminate 9 according to the present invention can be formed. The thickness is 3-5 micrometers, for example. Here, although an example of the laminating method by the ink jet method has been described, other various methods can be utilized by adjusting the viscosity of the paste. Therefore, the present invention is not limited to this, and in various aspects. Deformation is possible.

一方、接合強度補強用の樹脂11供給工程については、以下の通りである。   On the other hand, the step of supplying the resin 11 for reinforcing the bonding strength is as follows.

まず、電子部品3を準備し(図4(c)、図5のS3工程)、次に電子部品3上の隣り合う電極4同士の間に、先入れ可能な熱硬化性或いは熱可塑性の性質を有する樹脂11を供給する(図4(d)、図5のS4工程)。その供給方法はナノペーストと同様に、インクジェット装置12であることが好ましい。   First, the electronic component 3 is prepared (step S3 in FIG. 4 (c) and FIG. 5), and then a thermosetting or thermoplastic property that can be put in between the adjacent electrodes 4 on the electronic component 3. Is supplied (step S4 in FIG. 4D and FIG. 5). The supply method is preferably the inkjet device 12 as in the nanopaste.

また、その供給する樹脂11の高さであるが、回路形成体1上の電極2と、接合材料積層体9とを合算した厚さよりも低いことが好ましい。厚みが低過ぎると、内部まで十分に樹脂が行き渡らず、強度が不足してしまう可能性があり、逆に厚過ぎると電子部品3を搭載する際に、電極間が接触せずに接続不良の原因となったり、部品搭載時に位置ずれを生じる可能性があるためである。   Moreover, although it is the height of the resin 11 to supply, it is preferable that it is lower than the thickness which added the electrode 2 on the circuit formation body 1 and the joining material laminated body 9 together. If the thickness is too low, the resin may not reach the inside sufficiently, and the strength may be insufficient. Conversely, if the thickness is too thick, the electrodes may not be in contact with each other when the electronic component 3 is mounted. This is because there is a possibility of causing a position shift when mounting parts.

さらに樹脂11の種類については、ここでは一例として熱可塑性樹脂を適用した例を取って説明している。熱可塑性樹脂の場合は、図4(d)で一度、熱を加えて樹脂11を溶融して常温状態で硬化する性質を有するので、形状作成を制御し易く、電子部品3搭載が簡便となる。熱硬化性樹脂を用いた場合には、形状作成の制御という意味では熱可塑性樹脂と比較すると劣るが、一度熱を加える必要が無いため工程が簡便となる。つまり接合方法のプロセスとしては変わるが、最終的な接合構造体18としては変わらないので、ここでは一例として熱可塑性樹脂を用いた例で以下説明することとする。   Further, the type of the resin 11 is described here by taking an example in which a thermoplastic resin is applied as an example. In the case of a thermoplastic resin, since it has a property of once applying heat to melt the resin 11 and curing at room temperature in FIG. 4D, it is easy to control the shape creation and the electronic component 3 is easily mounted. . When a thermosetting resin is used, it is inferior to a thermoplastic resin in terms of controlling shape creation, but the process is simple because it is not necessary to apply heat once. In other words, although the process of the joining method is changed, the final joined structure 18 is not changed. Therefore, here, an example using a thermoplastic resin will be described below as an example.

次に図4(a)〜(d)で準備した回路形成体1及び電子部品3の部材を、電子部品3を反転させて、各々の電極同士が対向するように位置合わせを行い、回路形成体1に電子部品3を搭載する(図4(e)、図5のS5工程)。   Next, the members of the circuit forming body 1 and the electronic component 3 prepared in FIGS. 4A to 4D are aligned so that the respective electrodes face each other by inverting the electronic component 3. The electronic component 3 is mounted on the body 1 (step S5 in FIG. 4 (e) and FIG. 5).

次に熱や電磁波等のエネルギーにより、接合部材積層体を焼成・硬化して回路形成体上の電極2と電子部品3上の対向する電極同士を接合することが可能となる(図4(f)、図5のS6工程)。   Next, it is possible to bond the electrode 2 on the circuit formed body and the opposing electrodes on the electronic component 3 by baking and curing the bonding member laminate by energy such as heat and electromagnetic waves (FIG. 4 (f ), Step S6 of FIG.

本発明の第1実施形態にかかる接合構造体18の接合方法によれば、回路形成体1と電子部品3を接続する電極間に配置された接合材料積層体9との間に、接合強度補強用の樹脂11を介在させて、Auナノペーストにコーティングされた分散剤7が分解・揮発するのとほぼ同じタイミングで樹脂が溶融するように一括して加熱・焼成を制御することで、図4(f)及び図2に示すように回路形成体上の電極2と電子部品上の電極4間に、金属ナノ粒子6の積層体により構成された接合材料を介した電子部品3内側に形成された接合部以外の空間層となる隙間部に配置された状態を形成して、実装した電子部品3と回路形成体1の密着強度を補強して接合強度を向上することができるとともに、製品環境による熱ストレスが接合部に生じても、挿入した樹脂によりストレスを緩和し、接合部の破壊による断線を防ぐことができる。   According to the bonding method of the bonding structure 18 according to the first embodiment of the present invention, the bonding strength is strengthened between the circuit forming body 1 and the bonding material laminate 9 arranged between the electrodes connecting the electronic component 3. 4 by controlling the heating and baking in a lump so that the resin melts at almost the same timing as the dispersant 7 coated with the Au nanopaste decomposes and volatilizes through the resin 11 for use in FIG. As shown in (f) and FIG. 2, it is formed between the electrode 2 on the circuit forming body and the electrode 4 on the electronic component inside the electronic component 3 via a bonding material composed of a laminate of metal nanoparticles 6. It is possible to improve the bonding strength by forming a state of being arranged in a gap portion that becomes a space layer other than the bonding portion, and to reinforce the adhesion strength between the mounted electronic component 3 and the circuit forming body 1 and to improve the product environment. Even if thermal stress occurs due to Insertion resin relieve stress, it is possible to prevent the disconnection due to breakage of the joint portion.

また、樹脂が接合部間に存在することから、電子部品3を回路形成体1上に搭載する際や、或いは加熱・焼成の際に金属ナノペースト材料5が押し広がることによる、隣接する電極同士の短絡を防ぐことができる。このようにして電極間の接合信頼性を向上することができる。   Moreover, since resin exists between joining parts, when the electronic component 3 is mounted on the circuit formation body 1, or when the metal nano paste material 5 spreads out during heating and baking, adjacent electrodes Can prevent short circuit. In this way, the bonding reliability between the electrodes can be improved.

さらに、接合領域に樹脂層が形成された構造の場合には、何も存在しない空気層よりも樹脂の熱伝導率が大きいために放熱性を高めることができる効果もある。さらに図示はしないが、更に樹脂内部に、例えばシリカやアルミナのような熱伝導性の高い絶縁性の微粒子を存在させることにより放熱性をより一層高めることができる。   Furthermore, in the case of the structure in which the resin layer is formed in the joining region, the heat conductivity of the resin is larger than that of the air layer in which nothing is present, so that there is an effect that heat dissipation can be improved. Further, although not shown in the figure, the heat dissipation can be further enhanced by allowing insulating fine particles having high thermal conductivity such as silica and alumina to be present inside the resin.

また、接合強度補強用の樹脂11の第二の構成として、図3に示すように回路形成体上の電極2と電子部品上の電極4との間に、金属ナノ粒子6の積層体により構成された接合材料積層体9を介した電子部品3内側に形成された接合部内部の空隙部10に混在して形成するように加熱・焼成を制御することで、回路形成体1上に電子部品3を搭載し、加熱・焼成及び加圧した際に、金属ナノペースト材料5に含まれる金属ナノ粒子6に被覆した分散剤7及び溶剤8が分解・揮発することによって生じる接合部内部の空隙部10に接合強度補強用の樹脂11を浸透させることで、接合部の接合強度をより強固なものとし、且つ製品環境による熱ストレスが接合部に生じても、挿入した樹脂によりストレスを緩和し、接合部の破壊による断線を防ぐことができる。   Further, as a second configuration of the resin 11 for reinforcing the bonding strength, as shown in FIG. 3, it is configured by a laminate of metal nanoparticles 6 between the electrode 2 on the circuit forming body and the electrode 4 on the electronic component. By controlling the heating and firing so as to be mixed and formed in the gap 10 inside the joint formed inside the electronic component 3 through the bonded material laminate 9, the electronic component is formed on the circuit formed body 1. 3, when heated, baked and pressurized, the void 7 inside the joint is generated by the decomposition and volatilization of the dispersant 7 and the solvent 8 coated on the metal nanoparticles 6 included in the metal nanopaste material 5. 10, the resin 11 for reinforcing the joint strength is infiltrated to make the joint strength stronger, and even if thermal stress due to the product environment occurs in the joint, the stress is alleviated by the inserted resin, Prevents disconnection due to joint breakage It is possible.

また、一般的に電子部品3から発生した熱は接合部及びその周辺から熱を逃がすことになるが、より影響度の高い、電子部品上の電極4及び接合部を介して回路形成体1の電極側へ逃がす直接的な熱パスの経路となる接合部に空隙部10が存在する場合には、熱抵抗が高くなるために効率的な放熱構造とはなっていない。本発明の接合方法による電極接合構造によれば、接合部の空隙部10に樹脂層が浸透して混在した構造の場合には、放熱性を高めることができる効果もある。さらに図示はしないが、樹脂内部に電気伝導性に影響の無い範囲で、例えばシリカやアルミナのような熱伝導性の高い絶縁性の微粒子を存在させることにより放熱性をより一層高めることができる。   In general, the heat generated from the electronic component 3 releases heat from the joint and its surroundings. However, the influence of the circuit forming body 1 through the electrode 4 and the joint on the electronic component is higher. In the case where the gap 10 exists in the joint portion that is a direct heat path that escapes to the electrode side, the thermal resistance is increased, so that the heat dissipation structure is not efficient. According to the electrode bonding structure according to the bonding method of the present invention, in the case of the structure in which the resin layer penetrates and mixes in the gap portion 10 of the bonding portion, there is an effect that heat dissipation can be improved. Further, although not shown in the figure, heat dissipation can be further enhanced by allowing insulating fine particles having high thermal conductivity such as silica and alumina to exist in the resin within a range that does not affect the electrical conductivity.

具体的には、接合材料としてAu材料を用いた時のバルク状態の熱伝導率λは、293(W/(m・K))であるが、接合材料積層体9に空隙部10が存在する場合の熱伝導率λは低下する。空隙部10が空気層の場合、その熱伝導率λは、0.025(W/(m・K))であるが、空隙部10に樹脂11が入れば、その熱伝導率λは、0.2から0.3(W/(m・K))であり、1ケタ高い熱伝導率であり、接合材料積層体9全体の熱伝導率が改善される。このことで、電子部品3の熱を回路形成体1へ逃がすことがよりできる。   Specifically, the bulk state thermal conductivity λ when an Au material is used as the bonding material is 293 (W / (m · K)), but the void portion 10 exists in the bonding material laminate 9. In this case, the thermal conductivity λ decreases. When the gap 10 is an air layer, the thermal conductivity λ is 0.025 (W / (m · K)). However, if the resin 11 enters the gap 10, the thermal conductivity λ is 0. 2 to 0.3 (W / (m · K)), which is one digit higher in thermal conductivity, and the thermal conductivity of the entire bonding material laminate 9 is improved. Thus, the heat of the electronic component 3 can be released to the circuit forming body 1.

また、空隙部10の存在で、接合材料積層体9の電気抵抗率が高く、電流を流すことで接合材料積層体9自体で熱も発生しやすくなるが、空隙部10の樹脂11の存在で、より熱を逃がすことができる。   In addition, due to the presence of the gap portion 10, the electrical resistivity of the bonding material laminate 9 is high, and it becomes easy for heat to be generated in the bonding material laminate 9 itself by passing an electric current. However, due to the presence of the resin 11 in the gap portion 10. , More heat can be released.

さらに、本発明の第1実施形態にかかる接合構造体18の接合方法によれば、予め、電子部品3或いは回路形成体1の電極間に樹脂を先入れして溶融させることにより、金属ナノペースト材料5を用いた場合の特有の接合構造体18と成り得る、接合部ギャップが非常に狭い接合部への補強構造の製造が簡便に実現することができる。   Furthermore, according to the joining method of the joining structure 18 according to the first embodiment of the present invention, the metal nanopaste is obtained by previously introducing and melting the resin between the electrodes of the electronic component 3 or the circuit forming body 1. Manufacturing of a reinforcing structure to a joint portion having a very narrow joint gap, which can be a unique joint structure 18 when the material 5 is used, can be easily realized.

このような接合方法を適用することで、例えばLED素子15のように電子部品3の上面側が発光部であり、且つ低背化された接合構造体18の接合及び補強方法としてその効果は大きい。   By applying such a joining method, the effect is great as a joining and reinforcing method of the joining structure 18 whose upper surface side of the electronic component 3 is a light emitting portion like the LED element 15 and whose height is reduced.

以上にように、本発明の第1実施形態にかかる接合構造体18の接合方法によれば、金属ナノペースト材料5を用いた場合の接合方法の特有の課題である、加熱・焼成の際の空隙部10の発生による接合強度低下及びそれに伴う信頼性低下を解決できるとともに、金属ナノペースト材料5を用いることによる接合構造体18が低背化した際の補強構造が同時に実現することができるため、その効果は大きい。   As described above, according to the bonding method of the bonding structure 18 according to the first embodiment of the present invention, which is a problem specific to the bonding method when the metal nanopaste material 5 is used, Since it is possible to solve a decrease in bonding strength due to the generation of the void 10 and a decrease in reliability associated therewith, it is possible to simultaneously realize a reinforcing structure when the bonding structure 18 is lowered by using the metal nanopaste material 5. The effect is great.

(第2実施形態)
次に、本発明の実施形態を適用した具体例について、LED素子の実装を一例に挙げて説明する。ここでは、図6(a)と図6(b)を参照しながら説明する。
(Second Embodiment)
Next, a specific example to which the embodiment of the present invention is applied will be described by taking the mounting of an LED element as an example. Here, description will be made with reference to FIGS. 6 (a) and 6 (b).

図6(a)はLED素子15を用いた接合構造体18の断面図、図6(b)は図6(a)に示すB−B´断面図を表わしている。   6A is a cross-sectional view of the bonding structure 18 using the LED element 15, and FIG. 6B is a cross-sectional view taken along the line BB ′ shown in FIG. 6A.

まず、各構成要素の具体的構成について説明する。図6(a)と図6(b)において、LED素子15は発光層を含む発光結晶を積層して形成された発光素子部と、電気的な接続を行うP電極16とN電極17の2極の電極とで構成される。発光素子部の厚さは200μm以下の薄型化された素子である。電極構成については、LED素子15の発光素子部に近い側に1μm以下の下地層を形成した後、Au材質による厚さ2μmの電極(接合される箇所)が形成されている。   First, a specific configuration of each component will be described. 6A and 6B, the LED element 15 includes a light emitting element portion formed by laminating a light emitting crystal including a light emitting layer, and a P electrode 16 and an N electrode 17 for electrical connection. It is composed of polar electrodes. The light emitting element portion is a thinned element having a thickness of 200 μm or less. Regarding the electrode configuration, an underlayer of 1 μm or less is formed on the side of the LED element 15 close to the light emitting element portion, and then an electrode (joined portion) with a thickness of 2 μm made of Au material is formed.

一方、回路形成体については、基材をセラミック基板13とし、LED素子15が実装される側の電極については、1μm以下の下地層を形成した後、順にNi層1μm、Au電極層1μm(接合される箇所)が形成され、基板の総厚としては300μmである。   On the other hand, for the circuit-formed body, the base material is the ceramic substrate 13 and the electrode on which the LED elements 15 are mounted is formed with a Ni layer of 1 μm and an Au electrode layer of 1 μm (bonding) in order after forming a foundation layer of 1 μm or less. The total thickness of the substrate is 300 μm.

尚、LED素子15の実装においては、上記で記載したように2つの電極しか存在しない為、狭ピッチ接合の必要はなく、比較的広い面積で接合材料を配置することができる。したがって、金属ナノペースト材料5により接合材料積層体9を形成する際には幾何学的に規則的にドッド形状にして配置することが好ましい。そうすることで、発光部から発生する熱を効率的に基板側へ放熱することができる。   In mounting the LED element 15, since only two electrodes exist as described above, there is no need for narrow pitch bonding, and the bonding material can be arranged in a relatively wide area. Therefore, when forming the joining material laminated body 9 with the metal nanopaste material 5, it is preferable to arrange it in a geometrically regular dod shape. By doing so, the heat generated from the light emitting portion can be efficiently radiated to the substrate side.

次にその接合方法について図7(a)〜図7(f)を用いて説明する。図7(a)〜図7(f)に示すように(詳細については図4及び図5を用いた接合方法の説明を参照)、まず、セラミック基板上の電極14上に、平均粒径10nm程度のAuナノ粒子に分散剤7をコーティングして、且つ溶剤8を混ぜてペースト状にしたAuナノペーストをインクジェット装置12を用いて、上記したように幾何学的に規則的にドッド形状にして配置する。また、その厚みはAuナノペーストの供給を複数回繰り返すことによって5μmとした。さらに、Auナノペースト内の溶剤8を揮発させて形状の安定化を図る目的で、常温で約1時間放置して乾燥させた(図7(a)と図7(b))。   Next, the joining method will be described with reference to FIGS. 7 (a) to 7 (f). As shown in FIGS. 7A to 7F (for details, refer to the description of the bonding method using FIGS. 4 and 5), first, an average particle diameter of 10 nm is formed on the electrode 14 on the ceramic substrate. The Au nanopaste obtained by coating the Au nanoparticle with the dispersant 7 and mixing it with the solvent 8 into a paste form is geometrically regularly formed into a dod shape using the inkjet device 12 as described above. Deploy. The thickness was set to 5 μm by repeating the supply of Au nanopaste a plurality of times. Further, for the purpose of volatilizing the solvent 8 in the Au nanopaste to stabilize the shape, it was allowed to stand at room temperature for about 1 hour and dried (FIGS. 7A and 7B).

次にLED素子15の電極上の、セラミック基板13側に配置したAuナノペーストを配置した位置を避ける位置に、接合強度補強用の熱硬化性樹脂を、インクジェット装置12を用いて供給・配置した。また、その厚みは、セラミック基板13の電極厚みとAuナノペースト積層体厚みとを合算した厚み以下とした(図7(c)〜(d))。   Next, the thermosetting resin for reinforcing the bonding strength was supplied and arranged using the inkjet device 12 at a position avoiding the position where the Au nano paste arranged on the ceramic substrate 13 side was arranged on the electrode of the LED element 15. . Moreover, the thickness was made into the thickness below the sum total of the electrode thickness of the ceramic substrate 13, and Au nanopaste laminated body thickness (FIG.7 (c)-(d)).

次に、半導体素子実装が可能なマウンタ(実装機)にてLED素子15の位置補正を実施して、セラミック基板13上の適切な位置且つセラミック基板13の電極上のAuナノペーストとLED素子15の電極上の熱硬化性樹脂が干渉しないようにLED素子15を搭載する(図7(e))。   Next, the position of the LED element 15 is corrected by a mounter (mounting machine) capable of mounting a semiconductor element, and the Au nanopaste and the LED element 15 on an appropriate position on the ceramic substrate 13 and on the electrodes of the ceramic substrate 13 are implemented. The LED element 15 is mounted so that the thermosetting resin on the other electrode does not interfere (FIG. 7E).

次に、張り合わされたセラミック基板13及びLED素子15を、真空硬化炉などの熱供給装置を用いて徐々に加熱する(例えば、Auナノ粒子焼結温度を200℃とする)。   Next, the bonded ceramic substrate 13 and LED element 15 are gradually heated using a heat supply device such as a vacuum curing furnace (for example, the Au nanoparticle sintering temperature is 200 ° C.).

ここで本発明にかかる、加熱過程について説明する。まず、Auナノ粒子にコーティングされた有機化合物で構成された分散剤7が分解・揮発するタイミングを、熱硬化性樹脂が軟化・溶融する温度(例えば130℃)と同程度となるように調整しておく。   Here, the heating process according to the present invention will be described. First, the timing at which the dispersant 7 composed of an organic compound coated with Au nanoparticles is decomposed and volatilized is adjusted to be the same as the temperature at which the thermosetting resin is softened and melted (for example, 130 ° C.). Keep it.

通常、加熱段階において、上記した、ある一定の温度に達するとAuナノ粒子の外周にコーティングした分散剤7が分解・揮発する。このように熱により温められると、接合部の体積が収縮すると同時に揮発した分だけ気体が発生する為に、Auナノ粒子により構成された接合材料積層体9内部に空隙、つまり空隙部10が発生することとなる。この空隙部10により接合部材内部はポーラス状態となり、結果的に接合後の接合強度が低下する原因となる。したがって、本発明で記載したように、分散剤7の分解・揮発が開始されるタイミングとほぼ同じタイミングで接合強度補強用の熱硬化性樹脂が軟化・溶融して、ポーラス上の接合材料積層体9内部に浸透することによって、接合強度の低下を防止することができる(図3)。   Usually, in the heating stage, when the above-mentioned certain temperature is reached, the dispersant 7 coated on the outer periphery of the Au nanoparticles is decomposed and volatilized. When heated by heat in this way, the volume of the joint shrinks and at the same time, gas is generated as much as it volatilizes. Therefore, voids, that is, voids 10 are generated inside the bonding material laminate 9 composed of Au nanoparticles. Will be. The void 10 causes the inside of the joining member to be in a porous state, resulting in a decrease in joining strength after joining. Therefore, as described in the present invention, the thermosetting resin for reinforcing the bonding strength is softened and melted at substantially the same timing as when the dispersal / volatilization of the dispersant 7 is started, so that the bonding material laminate on the porous body It is possible to prevent a decrease in the bonding strength by penetrating into the inside (FIG. 3).

また、同時にゼラミックス基板13とLED素子15の間で、接合材料積層体9以外の何も介在しない箇所(空気層)にも熱硬化性樹脂が介在することが可能なので、LED素子15全体の接合面に対して、接合強度の向上を図ることができる(図2)。   At the same time, since the thermosetting resin can be interposed between the glass substrate 13 and the LED element 15 in a portion (air layer) where nothing other than the bonding material laminate 9 is interposed, The bonding strength can be improved with respect to the bonding surface (FIG. 2).

さらに、温度上昇に伴い、熱硬化性樹脂の硬化が開始され(例えば180℃)、最終的にはAuナノ粒子焼結温度に達した際に接合が完了することとなる(図7(f))。   Further, as the temperature rises, curing of the thermosetting resin is started (for example, 180 ° C.), and finally the joining is completed when the Au nanoparticle sintering temperature is reached (FIG. 7F). ).

また、この接合方法においては、従来の接合後に実施する後入れの接合強度補強用の樹脂11の注入及び硬化させる方法と比較すると、一括で接合部の焼成・結合と、補強用樹脂の硬化が実施できるので、工程数を減らすことができる。また、予め内部に補強用樹脂を配置しているので、後入れ方法のように一方向から樹脂を供給して浸透させる方法と比べて、塗りムラによる接合強度バラツキを抑制できる。また、特に低背化且つLED素子15のような部品上面の発光面に対して補強用樹脂の這い上がりを抑止しなければならない場合、従来の電子部品3サイドからの塗布供給方法と比較して有効な手段である。   Further, in this joining method, compared to the conventional method of injecting and hardening the resin 11 for reinforcing the joining strength after the joining, the joining portion is baked and bonded together and the reinforcing resin is cured. Since it can be implemented, the number of steps can be reduced. In addition, since the reinforcing resin is disposed inside in advance, the bonding strength variation due to uneven coating can be suppressed as compared with the method of supplying and infiltrating the resin from one direction as in the case of the last insertion method. In particular, when it is necessary to suppress the creeping of the reinforcing resin with respect to the light emitting surface on the upper surface of the component such as the LED element 15 as compared with the conventional application supply method from the electronic component 3 side, the height is reduced. It is an effective means.

さらに、補強用の樹脂11を構成しない場合のLED素子15の接合構造体18と比較して、接合部内部の空気層より熱伝導率が数倍〜数十倍高い樹脂が内在するのでLED素子15から発する熱を効率的にセラミック基板13側へ放熱することができる。   Furthermore, compared to the bonding structure 18 of the LED element 15 in the case where the reinforcing resin 11 is not configured, a resin whose thermal conductivity is several times to several tens of times higher than the air layer inside the bonding portion is included, so that the LED element. Heat generated from 15 can be efficiently radiated to the ceramic substrate 13 side.

以上のような接合方法によって、金属ナノペースト材料5を用いた接合において、接合構造体18の接合信頼性向上すると同時に上記した種々の効果を得ることができる。   By the joining method as described above, in the joining using the metal nano paste material 5, the joining reliability of the joining structure 18 can be improved and the various effects described above can be obtained.

上記実施形態においては、Auナノペーストにて形成された夫々の電極を加熱工程により、接合が行なわれるような場合について説明したが、接合方法はこのような場合にのみ限られるものではない。このような場合に代えて、例えば、加熱工程と同時に加圧工程を付与して夫々の電極を押圧して、その形状を変形させて、Auナノペーストと電極を当接させることで、接合を行なうような場合であっても良いし、超音波振動の付与をする超音波接合を適用した接合方法であっても良い。   In the above embodiment, the case where each electrode formed of Au nanopaste is bonded by a heating process has been described, but the bonding method is not limited to such a case. Instead of such a case, for example, by applying a pressurizing step at the same time as the heating step and pressing each electrode, deforming the shape and bringing the Au nano paste and the electrode into contact with each other, bonding can be performed. It may be the case where it performs, and the joining method which applied the ultrasonic joining which provides ultrasonic vibration may be sufficient.

なお、上記様々な実施形態のうちの任意の実施形態を適宜組み合わせることにより、それぞれの有する効果を奏するようにすることができる。   It is to be noted that, by appropriately combining arbitrary embodiments of the various embodiments described above, the effects possessed by them can be produced.

本発明にかかる接合構造体およびその接合方法によれば、接合部の狭ピッチ化及び薄型化・低背化に伴う接合構造体の接合信頼性向上が必要なLED素子の実装やシステムLSIの実装等の幅広い半導体製品に適用できる。   According to the bonding structure and the bonding method according to the present invention, the mounting of LED elements and the mounting of a system LSI that require improved bonding reliability of the bonding structure due to a narrow pitch and a reduction in thickness and height of the bonding portion. It can be applied to a wide range of semiconductor products.

(a)本発明における、回路形成体と電子部品の接合構造体の断面図、(b)は(a)におけるB−B´平面図(A) Sectional drawing of the junction structure of a circuit formation body and an electronic component in this invention, (b) is BB 'top view in (a) 本発明における、回路形成体と電子部品の接合構造体における接合部周辺の構成を示した断面図Sectional drawing which showed the structure around the junction part in the junction structure of a circuit formation body and an electronic component in this invention 本発明における、回路形成体と電子部品の接合構造体における接合部内部の構成を示した断面図Sectional drawing which showed the structure inside the junction part in the junction structure of a circuit formation body and an electronic component in this invention 本発明における、回路形成体と電子部品の接合構造体における接合方法の手順を示す断面図Sectional drawing which shows the procedure of the joining method in the joining structure body of a circuit formation body and an electronic component in this invention 本発明における、回路形成体と電子部品の接合構造体における接合方法のフローチャートThe flowchart of the joining method in the junction structure of a circuit formation object and an electronic component in the present invention (a)本発明における、セラミック基板とLED素子の接合構造体の断面図(b)は(a)におけるB−B´平面図(A) In the present invention, a cross-sectional view (b) of a bonded structure of a ceramic substrate and an LED element is a BB ′ plan view in (a). (a)〜(f)は、本発明における、セラミック基板とLED素子の接合構造体における接合方法の手順を示す断面図(A)-(f) is sectional drawing which shows the procedure of the joining method in the joining structure body of a ceramic substrate and an LED element in this invention. (a1)から(c1)従来の回路形成体と電子部品の接合構造体の接合方法を示す平面図、(a2)〜(c2)は、(a1)〜(c1)のそれぞれの断面図(A1) to (c1) Plan views showing a conventional method of joining a circuit structure and an electronic component joining structure, (a2) to (c2) are cross-sectional views of (a1) to (c1), respectively. (a)〜(d)は、金属ナノペースト材料結合及びボイド発生のメカニズムを示す図(A)-(d) is a figure which shows the mechanism of metal nanopaste material coupling | bonding and void generation | occurrence | production. 従来の回路形成体と電子部品の接合構造体において、接合部内部に存在するボイド例を示す断面図Sectional drawing which shows the example of the void which exists in a junction part in the junction structure of the conventional circuit formation body and an electronic component 従来の回路形成体と電子部品の接合構造体において、接合部間の短絡例を示す断面図Sectional drawing which shows the example of a short circuit between junction parts in the conventional junction structure of a circuit formation body and an electronic component

符号の説明Explanation of symbols

1 回路形成体
2 電極
3 電子部品
4 電極
5 金属ナノペースト材料
6 金属ナノ粒子
7 分散剤
8 溶剤
9 接合材料積層体
10 ボイド(空隙)
11 樹脂
12 インクジェット装置
13 セラミック基板
14 電極
15 LED素子
16 P電極
17 N電極
18 接合構造体
DESCRIPTION OF SYMBOLS 1 Circuit formation body 2 Electrode 3 Electronic component 4 Electrode 5 Metal nano paste material 6 Metal nano particle 7 Dispersant 8 Solvent 9 Joining material laminated body 10 Void (void)
DESCRIPTION OF SYMBOLS 11 Resin 12 Inkjet apparatus 13 Ceramic substrate 14 Electrode 15 LED element 16 P electrode 17 N electrode 18 Joining structure

Claims (9)

複数の電極を有する回路形成体と、
上記回路形成体の複数の電極に各々対向して配置された複数の電極を有する電子部品と、
上記回路形成体と上記電子部品を接続する接合材料と、
を備えた接合構造体において、
前記回路形成体と前記電子部品とを接続する電極間に配置された接合材料中に、接合強度補強用の樹脂を有していることを特徴とする接合構造体。
A circuit formed body having a plurality of electrodes;
An electronic component having a plurality of electrodes disposed to face the plurality of electrodes of the circuit forming body,
A bonding material for connecting the circuit forming body and the electronic component;
In a bonded structure comprising:
A bonding structure characterized in that a bonding strength reinforcing resin is included in a bonding material disposed between electrodes connecting the circuit forming body and the electronic component.
前記接合強度補強用の樹脂は、接合部である電極の間、及び前記接合材料内部の空隙部に混在していることを特徴とする請求項1に記載の接合構造体。 The bonding structure according to claim 1, wherein the bonding strength reinforcing resin is mixed between the electrodes as the bonding portions and in the voids inside the bonding material. 前記接合強度補強用の樹脂は、非導電性の性質を有する樹脂で構成されることを特徴とする請求項1から請求項2に記載の接合構造体。 The bonding structure according to claim 1, wherein the bonding strength reinforcing resin is made of a resin having non-conductive properties. 前記接合強度補強用の樹脂は、熱硬化性或いは熱可塑性の性質を有する樹脂で構成されることを特徴とする請求項1から請求項3に記載の接合構造体。 The joint structure according to claim 1, wherein the resin for reinforcing the joint strength is made of a resin having a thermosetting property or a thermoplastic property. 前記接合強度補強用の樹脂の厚さは、前記回路形成体の複数の電極と、前記接合材料とを
合算した厚さよりも薄い構造を有していることを特徴とする請求項1から請求項4に記載の接合構造体。
The thickness of the resin for reinforcing the bonding strength has a structure thinner than the total thickness of the plurality of electrodes of the circuit forming body and the bonding material. 5. A bonded structure according to 4.
前記接合材料は、平均直径が100nm以下の金属からなる超微粒子を有機化合物から成る分散剤で被覆して、溶媒中に分散させてなる金属ナノペースト材料を用いて積層させた構造を有することを特徴とする請求項1から請求項5に記載の接合構造体。 The bonding material has a structure in which ultrafine particles made of a metal having an average diameter of 100 nm or less are coated with a dispersant made of an organic compound and laminated using a metal nanopaste material dispersed in a solvent. The bonded structure according to claim 1, wherein the bonded structure is characterized in that: 前記接合材料において、前記金属ナノペースト材料を積層した厚みは、10μm以下で構成されたことを特徴とする請求項1に記載の接合構造体。 The joining structure according to claim 1, wherein the joining material has a thickness of 10 μm or less in which the metal nano paste material is laminated. 複数の電極を有する回路形成体と、
上記回路形成体の複数の電極に各々対向して配置された複数の電極を有する電子部品と、
上記回路形成体と上記電子部品とを接続する接合材料と、
を備えた電子部品の接合構造体の接合方法において、
複数の電極を有する前記回路形成体を準備し、
前記回路形成体の複数の電極上に、平均直径が100nm以下の金属からなる超微粒子を含有した金属ナノペースト材料を用いて接合材料としての積層体を形成し、
前記回路形成体の電極同士の間、或いは前記回路形成体の複数の電極に対抗する、電子部品上の電極同士の間に、前記接合補強用の樹脂を前記接合材料の高さよりも低く形成し、
前記積層体が流れ出ないように、前記回路形成体に前記電子部品を向かい合わせ、
加熱、加圧或いはそれらの組み合わせにより前記積層体を硬化する際に、金属ナノペースト材料中に含まれる分散剤が揮発した際に発生する前記積層体の空隙部に、前記接合補強用樹脂を溶融・硬化させて、混在させながら電子部品の実装を一括して行うことを特徴とする接合構造体の接合方法。
A circuit formed body having a plurality of electrodes;
An electronic component having a plurality of electrodes disposed to face the plurality of electrodes of the circuit forming body,
A bonding material for connecting the circuit formed body and the electronic component;
In the joining method of the joint structure of an electronic component comprising:
Preparing the circuit forming body having a plurality of electrodes;
A laminate as a bonding material is formed on the plurality of electrodes of the circuit forming body using a metal nanopaste material containing ultrafine particles made of a metal having an average diameter of 100 nm or less,
The bonding reinforcing resin is formed lower than the height of the bonding material between the electrodes of the circuit forming body or between the electrodes on the electronic component that opposes the plurality of electrodes of the circuit forming body. ,
The electronic component is faced to the circuit forming body so that the laminated body does not flow out,
When the laminate is cured by heating, pressurization, or a combination thereof, the bonding reinforcing resin is melted in the voids of the laminate that are generated when the dispersant contained in the metal nanopaste material volatilizes. A bonding structure bonding method characterized in that electronic components are mounted together while being cured and mixed.
複数の電極を有する回路形成体と、
上記回路形成体の複数の電極に各々対向して配置された複数の電極を有する電子部品と、
上記回路形成体と上記電子部品とを接続する接合材料と、
を備えた電子部品の接合構造体の接合方法において、
複数の電極を有する前記回路形成体を準備し、
前記回路形成体の複数の電極上に、平均直径が100nm以下の金属からなる超微粒子を含有した金属ナノペースト材料を用いて接合材料としての積層体を形成し、
前記回路形成体の電極同士の間、或いは前記回路形成体の複数の電極に対抗する、電子部品上の電極同士の間に、前記接合補強用の樹脂を前記接合材料の高さよりも低く形成し、
前記積層体が流れ出ないように、前記回路形成体に前記電子部品を向かい合わせ、
加熱、加圧或いはそれらの組み合わせにより前記積層体を硬化すると共に、
前記接合補強用樹脂を溶融・硬化させて、接合部の隙間部に配置させながら電子部品の実装を一括して行うことを特徴とする接合構造体の接合方法。
A circuit formed body having a plurality of electrodes;
An electronic component having a plurality of electrodes disposed to face the plurality of electrodes of the circuit forming body,
A bonding material for connecting the circuit formed body and the electronic component;
In the joining method of the joint structure of an electronic component comprising:
Preparing the circuit forming body having a plurality of electrodes;
A laminate as a bonding material is formed on the plurality of electrodes of the circuit forming body using a metal nanopaste material containing ultrafine particles made of a metal having an average diameter of 100 nm or less,
The bonding reinforcing resin is formed lower than the height of the bonding material between the electrodes of the circuit forming body or between the electrodes on the electronic component that opposes the plurality of electrodes of the circuit forming body. ,
The electronic component is faced to the circuit forming body so that the laminated body does not flow out,
While curing the laminate by heating, pressing or a combination thereof,
A bonding structure bonding method characterized by melting and curing the bonding reinforcing resin and collectively mounting electronic components while disposing the resin in a gap portion of the bonding portion.
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WO2021256040A1 (en) * 2020-06-15 2021-12-23 ソニーセミコンダクタソリューションズ株式会社 Semiconductor device and method for producing same

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1056041A (en) * 1996-06-04 1998-02-24 Citizen Watch Co Ltd Structure and method for mounting semiconductor device
JP2004074267A (en) * 2002-08-22 2004-03-11 Matsushita Electric Ind Co Ltd Bonding material and its manufacturing method, bonding material feeding method, and electronic circuit substrate
JP2005012154A (en) * 2003-05-23 2005-01-13 Denso Corp Mounting structure of electronic component
JP2005136399A (en) * 2003-10-07 2005-05-26 Matsushita Electric Ind Co Ltd Semiconductor device mounting method and mounting substrate of semiconductor device
JP2006202604A (en) * 2005-01-20 2006-08-03 Matsushita Electric Ind Co Ltd Conductive paste, wiring board using the same, and manufacturing method of multilayered board and electronic parts mounted body
JP2006521703A (en) * 2003-03-28 2006-09-21 フリースケール セミコンダクター インコーポレイテッド Flip chip assembly with thin underfill and thick solder mask
WO2007122925A1 (en) * 2006-04-24 2007-11-01 Murata Manufacturing Co., Ltd. Electronic component, electronic component device using same, and method for manufacturing same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1056041A (en) * 1996-06-04 1998-02-24 Citizen Watch Co Ltd Structure and method for mounting semiconductor device
JP2004074267A (en) * 2002-08-22 2004-03-11 Matsushita Electric Ind Co Ltd Bonding material and its manufacturing method, bonding material feeding method, and electronic circuit substrate
JP2006521703A (en) * 2003-03-28 2006-09-21 フリースケール セミコンダクター インコーポレイテッド Flip chip assembly with thin underfill and thick solder mask
JP2005012154A (en) * 2003-05-23 2005-01-13 Denso Corp Mounting structure of electronic component
JP2005136399A (en) * 2003-10-07 2005-05-26 Matsushita Electric Ind Co Ltd Semiconductor device mounting method and mounting substrate of semiconductor device
JP2006202604A (en) * 2005-01-20 2006-08-03 Matsushita Electric Ind Co Ltd Conductive paste, wiring board using the same, and manufacturing method of multilayered board and electronic parts mounted body
WO2007122925A1 (en) * 2006-04-24 2007-11-01 Murata Manufacturing Co., Ltd. Electronic component, electronic component device using same, and method for manufacturing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021256040A1 (en) * 2020-06-15 2021-12-23 ソニーセミコンダクタソリューションズ株式会社 Semiconductor device and method for producing same

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