JP2009123797A - Manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To bring a probe and a test pad corresponding to the probe into contact by a desired contact pressure in a probe inspection. <P>SOLUTION: A probe card is provided with a thin film sheet (first sheet) 2 and a pressurizer (pressurizing mechanism) 9 disposed on the side of the upper surface (first main surface) 2a of the thin film sheet 2 for pressurizing the thin film sheet 2 from the side of the upper surface 2a. Between the main surface of the pressurizer 9 and the upper surface 2a of the thin film sheet, an elastomer sheet (first intermediate sheet) 45 and a polyimide sheet (second intermediate sheet) 46 are laminated in order and disposed from the side of the upper surface 2a of the thin film sheet 2. In this case, a friction coefficient when the polyimide sheet 46 and the pressurizer 9 are brought into contact is made smaller than a friction coefficient when the elastomer sheet 45 and the pressurizer 9 are brought into contact. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a manufacturing technique of a semiconductor device, and more particularly to a technique effective when applied to an inspection of a semiconductor device.

  For example, in Japanese Patent Laid-Open No. 8-220138 (Patent Document 1), when measuring the electrical characteristics of a semiconductor element using a membrane type probe card, the holding plate caused by the load from the shaft and the tension of the thin film is disclosed. In order to prevent warpage and obtain good contact with the semiconductor element, the pressing plate presses the upper side surface that receives the shaft, the cylindrical side surface, and the metal protrusion formed on the thin film and brought into contact with the semiconductor element. It is disclosed that it is formed from a lower surface and an inclined surface formed between the lower surface and a cylindrical side surface.

  Further, for example, in Japanese Patent Laid-Open No. 7-135240 (Patent Document 2), a probe apparatus for inspecting electrical characteristics by using bumps formed on an anisotropic conductive thin film so as to be connected to electrodes of a measured object. In this technology, a technique is disclosed in which air is blown into a gap between a measured object and a thin film on a device base, the bending of the thin film is removed by a rebounding air pressure, and contact other than bumps is excluded from the measured surface. Yes.

Further, for example, in Japanese Patent Application Laid-Open No. 2007-5405 (Patent Document 3), in a state where a sheet-like elastomer and a polyimide sheet are sequentially arranged on the main surface of the pressing tool, the main surface of the pressing tool is the back surface of the thin film sheet ( A technique is disclosed in which a variation in the height of the tip of the probe is absorbed by local deformation of the elastomer by disposing it on the surface opposite to the main surface on which the probe is formed.
JP-A-8-220138 JP 7-135240 A 2007-5405 gazette

  There is a probe inspection as a semiconductor device inspection technique. This probe inspection includes a function test for confirming whether or not the semiconductor device operates in accordance with a predetermined function, a test for determining a non-defective product / defective product by performing a DC operation characteristic and an AC operation characteristic test, and the like.

  In recent years, semiconductor devices have become more multifunctional, and it has been promoted to create a plurality of circuits in one semiconductor chip (hereinafter simply referred to as a chip). In addition, in order to reduce the manufacturing cost of a semiconductor device, it has been promoted to miniaturize semiconductor elements and wirings to reduce the chip area and increase the number of acquired chips per wafer.

  Therefore, not only the number of test pads (bonding pads) is increased, but also the arrangement of test pads is narrowed and the area of the test pads is also reduced. When a prober having a cantilever-like probe is used for the probe inspection as the pitch of the test pad is reduced, it is difficult to install the probe in accordance with the position of the test pad. There is a problem that becomes.

  The present inventors have studied a technique that can realize a probe inspection even for a chip having a narrow test pad pitch by using a prober having a plurality of probes formed by using a semiconductor device manufacturing technique. ing. Among them, the present inventors have found the following problems.

  The plurality of probes are a part of a thin film probe formed by depositing a metal film and a polyimide film using a semiconductor device manufacturing technique, patterning them, etc., and a chip to be inspected On the lower main surface side of the opposing thin film probe, for example, an arrangement pitch of 10 μm order is provided.

  At the time of probe inspection, the thin film probe in the region where the probe is formed is pressed from the back surface (upper main surface) opposite to the lower main surface by a pressing tool made of 42 alloy or the like and having a flat pressing surface. If the back surface side of the thin film probe is flat, the thin film probe receives a forced displacement in a substantially uniform pressing direction from the pressing tool.

  However, on the back surface side of the thin film probe, for example, fine wrinkles and irregularities on the order of microns generated at the stage of forming or assembling the thin film probe may occur.

  In addition, the inspection using the thin film probe is performed at various environmental temperatures. The low temperature inspection is performed at an environmental temperature of, for example, −25 ° C., and the high temperature inspection is performed at an environmental temperature of, for example, 85 ° C. to 100 ° C. For this reason, when such a thermal cycle is applied to the thin film probe, wrinkles on the order of microns may occur on the back surface side of the thin film probe due to a difference in linear expansion coefficient of members constituting the thin film probe.

  When pressing with the above-described wrinkles or irregularities on the back side of the thin film probe, the pressing is performed with a gap formed between the pressing tool and the thin film probe. For this reason, the contact pressure with the mating test pads that respectively contact the plurality of probes is not necessarily uniform. That is, the surface pressure distribution of each of the plurality of contact terminals becomes non-uniform, and there are places where the contact pressure with the test pad which is the counterpart member is high and low.

  Thus, when the contact pressure between the probe and the corresponding test pad is far from the desired state, the electrical contact resistance at the contact portion between the plurality of probes and the corresponding test pads becomes non-uniform. This makes it impossible to accurately check the electrical resistance of the circuit inside the chip.

  In addition, when the contact pressure between the probe and the corresponding test pad is increased, there is a problem that the probe is easily worn, and when the contact pressure is excessively high, there is a problem that a chip to be inspected is damaged.

  In particular, along with the downsizing, higher density, and higher functionality of semiconductor devices that are inspection targets, thin film probes, which are inspection jigs, are being used to increase the number of wires and to reduce the pitch of thin wires. Flattening is becoming increasingly difficult in the future.

  Under these circumstances, in order to bring multiple probes into contact with the mating test pad at a depth of micron order, technology to prevent micron-order wrinkles and unevenness, or wrinkles and unevenness occurs. Even in such a state, a technique for applying a pressing force to the probe with a uniform surface pressure distribution is important.

  In the techniques disclosed in Patent Documents 1 and 2, the surface pressure distribution of the probe in these thin film probes is not taken into consideration. That is, in Patent Document 1 described above, strong tension is applied to the entire thin film to suppress the generation of wrinkles in the thin film. For example, wrinkles caused by uneven distribution of wirings formed in the thin film. In some cases, it cannot be prevented.

  Further, in the above-mentioned Patent Document 2, it has been devised so as not to generate a wavy shape like a wrinkle on the thin film by air, but the arrangement of the probe or the micron-order wrinkles or irregularities generated on the back side of the thin film It seems that it is difficult to cope with the occurrence of the distribution of the surface pressure of the probe.

  In the disclosed technology, it is devised not to generate wavy shapes such as wrinkles on the thin film due to air, but when the surface pressure distribution of the probe due to the placement of the probe occurs Seems to be difficult.

  Moreover, in the said patent document 3, uneven distribution of the pressing force distribution to the polyimide sheet by the influence of the flatness of a pressing tool is prevented by arrange | positioning a sheet-like elastomer and a polyimide sheet sequentially on the main surface of a pressing tool. ing. However, in order to prevent wrinkling of the polyimide sheet itself, the thickness of the polyimide sheet must be increased to some extent. For this reason, a micron-order gap may occur between the polyimide sheet and the back surface of the thin film probe.

  An object of one representative invention disclosed in the present application is to provide a probe and a test pad corresponding to the probe in a probe inspection performed using a thin film probe formed by using a semiconductor device manufacturing technique. It is an object of the present invention to provide a technique capable of contacting within the contact pressure range.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

That is, in one embodiment of the present invention, a method of manufacturing a semiconductor device includes a plurality of first electrodes formed in a chip region of a semiconductor wafer and a plurality of first electrodes formed on a second main surface of a first sheet of a probe card. A step of performing electrical inspection of the elements formed in the chip region in a state where the contact terminals are in contact with each other,
The probe card includes a first sheet having a first main surface and a second main surface located on opposite sides along the thickness direction, and a first main surface on the back side of the second main surface of the first sheet. In the step of electrically inspecting the element formed on the chip region of the semiconductor wafer, the first main surface side of the first sheet is pressed, and the plurality of contact terminals are connected to the semiconductor wafer. A pressing mechanism having a pressing tool that presses against the plurality of first electrodes of the chip region, and an intermediate sheet disposed between the first sheet and the pressing tool,
The intermediate sheet includes a first intermediate sheet disposed to face and contact the first main surface of the first sheet, and a second intermediate sheet disposed to face and contact the pressing tool.
The first intermediate sheet is formed of an elastomer,
The friction coefficient when the second intermediate sheet and the pressing tool are brought into contact with each other is made smaller than the friction coefficient when the first intermediate sheet and the pressing tool are brought into contact with each other.

  Among the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  That is, according to one embodiment of the present invention, in the probe inspection, the probe and the test pad corresponding to the probe can be brought into contact with each other within a desired contact pressure range.

  Before describing the present invention in detail, the meaning of terms in the present application will be described as follows.

  A wafer is a single crystal silicon substrate (generally a substantially planar circular shape) used for manufacturing a semiconductor device, an SOI (Silicon On Insulator) substrate, a sapphire substrate, a glass substrate, other insulating, anti-insulating or semiconductor substrates, etc., and their composites A special substrate. In addition, the term “semiconductor device” as used herein refers not only to a semiconductor device such as a silicon wafer or a sapphire substrate or an insulator substrate, but particularly to a TFT (Thin Film Transistor) and unless otherwise specified. It also includes those made on other insulating substrates such as glass such as STN (Super-Twisted-Nematic) liquid crystal.

  The device surface is a main surface of a wafer on which a device pattern corresponding to a plurality of chip regions is formed by lithography.

  A contact terminal is a wiring layer formed by a patterning technique that combines a wafer process, that is, a photolithography technique, a CVD (Chemical Vapor Deposition) technique, a sputtering technique, an etching technique, etc. And the thing which formed integrally the front-end | tip part electrically connected to it.

  The thin film probe, the thin film probe card, or the protruding needle wiring sheet composite is provided with the contact terminal (protruding needle) that comes into contact with the object to be inspected and the wiring drawn from the contact terminal. It refers to a thin film on which a contact electrode is formed, for example, a thickness of about 10 μm to 300 μm.

  The probe card refers to a structure having a contact terminal that contacts a wafer to be inspected and a multilayer wiring board, and the semiconductor inspection apparatus refers to an inspection apparatus having a sample support system on which the probe card and the wafer to be inspected are placed. Say.

  The probe inspection is an electrical test performed with a prober on a wafer for which a wafer process has been completed. The semiconductor integrated circuit is configured by applying the tip of the contact terminal to an electrode formed on the main surface of the chip region. In other words, a non-defective product / defective product is discriminated by performing a function test for confirming whether or not the device operates in accordance with a predetermined function and a DC operation characteristic and an AC operation characteristic test. This is distinguished from a screening test (final test) that is performed after dividing into chips (or after packaging is completed).

  In the following embodiments, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments. However, unless otherwise specified, they are not irrelevant to each other. There are some or all of the modifications, details, supplementary explanations, and the like.

  Further, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), especially when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and may be more or less than the specific number.

  Further, in the following embodiments, the constituent elements (including element steps and the like) are not necessarily indispensable unless otherwise specified and apparently essential in principle. Needless to say.

  Similarly, in the following embodiments, when referring to the shapes, positional relationships, etc. of the components, etc., the shapes are substantially the same unless otherwise specified, or otherwise apparent in principle. And the like are included. The same applies to the above numerical values and ranges.

  Also, components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof is omitted.

  Further, in all the drawings for explaining the present embodiment, hatching may be given even in a plan view for easy understanding of the configuration of each member.

  In the present embodiment, the insulated gate field effect transistor including the MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is called a MISFET (Metal Insulator Semiconductor Field Effect Transistor).

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<Outline of semiconductor device manufacturing method>
The method for manufacturing a semiconductor device according to the present embodiment includes, for example, the following steps.

  First, a semiconductor wafer having a main surface (first main surface) and a back surface (second main surface) positioned on opposite sides along the thickness direction is prepared. The semiconductor wafer is a flat semiconductor plate having a substantially circular shape.

  Subsequently, a plurality of integrated circuit elements (elements) are formed in the chip region of the main surface of the semiconductor wafer. Here, a plurality of chip regions are formed on one semiconductor wafer. The chip area is an area partitioned into a planar rectangular shape. An example of the integrated circuit element is a MISFET.

  Subsequently, a wiring layer is formed in the chip region on the main surface of the semiconductor wafer. A desired integrated circuit (circuit) is formed by electrically connecting a plurality of integrated circuits through the wiring layer. Also, a plurality of bonding pads (first electrode: hereinafter referred to simply as pads) that are electrically connected to a desired integrated circuit are formed on the uppermost wiring layer of the wiring layer. An example of the arrangement of the pads will be described later.

  Thereafter, a plurality of probes (contact terminals) formed on a lower surface (second main surface) of a thin film sheet (first sheet) of a probe card described later are brought into contact with a plurality of pads formed in the chip region of the semiconductor wafer. In the state, the electrical characteristics of the desired integrated circuit in the chip area are examined.

  Thereafter, a dicing process is performed on the semiconductor wafer to cut out a chip region from the semiconductor wafer to form a semiconductor chip on which a desired integrated circuit is formed.

  Next, a probe card used in such a method for manufacturing a semiconductor device will be described.

<Overall structure of probe card>
1 is a plan view of the main part of the lower surface of the probe card of the present embodiment, FIG. 2 is a cross-sectional view taken along the line AA in FIG. 1, and FIG. 3 is a main part of the region where the probe is formed. It is an expanded sectional view.

  As shown in FIGS. 1 and 2, the probe card of the present embodiment includes, for example, a multilayer wiring board (first wiring board) 1, a thin film sheet (thin film probe, first sheet) 2, a plunger (pressing mechanism) 3, and the like. Formed from.

  The multilayer wiring board 1 is formed of a planar circular frame-shaped printed multilayer wiring board having a planar circular opening 5 at the center thereof.

  At the center of the lower surface (second main surface) 1b of the multilayer wiring board 1, a multilayer is formed by a pressing ring (first fixing jig) 4 provided so as to press the outer periphery of the thin film sheet 2 so as to close the opening 5. The wiring board 1 is fixed to the lower surface (second main surface) 1b.

The thin film sheet 2 is formed of a flexible wiring board using, for example, a resin whose main component is polyimide as an insulating material. A plurality of probes (contact terminals) 7 are arranged at the center of the lower surface (second main surface) 2 b of the thin film sheet 2. Each probe 7 has a quadrangular pyramid shape or a quadrangular pyramid shape.
In the thin film sheet 2, a plurality of wires (second wires) that are electrically connected to each of the probes 7 and extend from the region where the probe 7 at the center of the lower surface 2 b of the thin film sheet 2 is formed toward the outer peripheral edge. Is formed. The lower surface 1b of the multilayer wiring board 1 is formed with a plurality of receiving portions (not shown) that are in electrical contact with the ends of the plurality of wirings, respectively. The wiring is electrically connected to a plurality of pogo (POGO) seats 8 provided on the upper surface (first main surface) 1a of the multilayer wiring substrate 1 through wiring (first wiring) formed therein. The pogo seat 8 has a function of receiving a pin for introducing a signal from the tester to the probe card.

  On the other hand, a plunger 3 is arranged at the center of the upper surface 1a of the multilayer wiring board 1 (above the upper surface 2a side of the thin film sheet 2). The plunger 3 is fixed to the multilayer wiring board 1 via a plunger support portion 3B. The plunger support portion 3 </ b> B is bonded to the thin film sheet 2 by an adhesive ring 6 in the opening 5.

  The plunger 3 is attached to the upper surface (first main surface) 1a of the multilayer wiring board 1 via a plunger support portion 3B. An opening 5 is provided at the center of the multilayer wiring board 1, and the thin film sheet 2 and the plunger 3 are bonded to each other through an adhesive ring 6 in the opening 5.

  On the lower surface (second main surface) 2 b of the thin film sheet 2, for example, a plurality of probes 7 having a quadrangular pyramid shape or a quadrangular pyramid trapezoid shape are formed.

  A pressing tool (pressing mechanism) 9 is disposed between the plunger 3 and the thin film sheet 2. The pressing tool 9 is, for example, a planar circular metal plate, and the material can be exemplified by a metal material harder than polyimide such as 42 alloy. The main surface (pressing surface) 9b of the pressing tool 9 is formed substantially flat and is movable in the vertical direction.

  In the present embodiment, in order to bring all the probes 7 into contact with the pads of the chip (chip region) 10, the thin film sheet 2 in the region (first region) where the probes 7 are formed is used as the upper surface (first main surface) 2a. The plunger (pressing mechanism) 3 presses the pressing tool (pressing mechanism) 9 from the side. That is, a constant pressure is applied to the pressing tool 9 by the elastic force of the spring 3 </ b> A disposed in the plunger 3.

  Here, as shown in FIG. 3, between the main surface 9b of the pressing tool 9 and the upper surface 2a of the thin film sheet 2, for example, an elastomer sheet (first intermediate sheet) 45 such as silicone and a polyimide sheet (second intermediate sheet) Sheet) 46 is disposed.

  The elastomer sheet 45 and the polyimide sheet 46 have upper surfaces (first main surfaces) 45a and 46a and lower surfaces (second main surfaces) 45b and 46b that are located on opposite sides of each other along the thickness direction. .

  The elastomer sheet 45 is disposed in a state where the lower surface (second main surface) 45 b is in contact with the upper surface 2 a of the thin film sheet 2. The planar position at which the elastomer sheet 45 is disposed is a position corresponding to a region where the plurality of probes 7 are formed on the lower surface 2b side of the thin film sheet 2.

  The polyimide sheet 46 disposed on the upper surface (first main surface) 45 a side of the elastomer sheet 45 is disposed in a state where the upper surface (first main surface) 46 a is in contact with the main surface 9 b of the pressing tool 9. . Similarly to the elastomer sheet 45, the planar position where the polyimide sheet 46 is disposed is also a position corresponding to a region where the plurality of probes 7 are formed on the lower surface 2b side of the thin film sheet 2.

  The polyimide sheet 46 has a characteristic that it is more slippery than the elastomer sheet 45. If the upper surface 45a of the elastomer sheet 45 and the main surface 9b of the pressing tool 9 are opposed to each other, the friction coefficient of the contact surface is about 0.8. On the other hand, the coefficient of friction of the contact surface where the upper surface 46a of the polyimide sheet 46 and the main surface 9b of the pressing tool 9 shown in FIG. 3 are opposed to each other is about 0.3, which is smaller than that of the elastomer sheet 45.

  On the other hand, the elastomer sheet 45 is softer than a polyimide sheet and has a characteristic that it is easily deformed by an external force.

  By adopting the above configuration, the probe card of the present embodiment can bring the probe 7 and the pad of the chip 10 corresponding to the probe 7 into contact within a desired contact pressure range in probe inspection. The reason will be described in detail after the detailed structure of the thin film sheet 2 is described.

<Target of probe inspection>
In the present embodiment, a chip on which an LCD (Liquid Crystal Display) driver is formed can be exemplified as an object to be subjected to probe inspection (electrical inspection) using the probe card. FIG. 4 illustrates a plane of the chip (chip area) 10 and a part thereof enlarged. The chip 10 is made of, for example, a single crystal silicon substrate, and an LCD driver circuit is formed on the main surface thereof. In addition, a large number of pads (first electrodes) 11 and 12 that are electrically connected to the LCD driver circuit are arranged on the periphery of the main surface of the chip 10, and the upper long side of the chip 10 in FIG. The pads 11 arranged along both short sides serve as output terminals, and the pads 12 arranged along the lower long sides of the chip 10 serve as input terminals. Since the number of output terminals of the LCD driver is larger than the number of input terminals, the pads 11 are arranged in two rows along the upper long side and both short sides of the chip 10 in order to widen the interval between adjacent pads 11 as much as possible. The pads 11 in the respective rows are arranged alternately along the upper long side and both short sides of the chip 10. In the present embodiment, the pitch LP at which the adjacent pads 11 are arranged is about 68 μm, for example. Further, in the present embodiment, the pad 11 is a planar rectangle, the length LA of the long side extending in the direction intersecting (orthogonal) with the outer periphery of the chip 10 is about 63 μm, and along the outer periphery of the chip 10. The length LB of the short side extending is about 34 μm. Further, since the pitch LP where the adjacent pads 11 are arranged is about 68 μm and the length LB of the short side of the pads 11 is about 34 μm, the interval between the adjacent pads 11 is about 34 μm.

  The pads 11 and 12 are bump electrodes formed of, for example, Au (gold), and are formed on the input / output terminals (bonding pads) of the chip 10 by a method such as electrolytic plating, electroless plating, vapor deposition, or sputtering. Is. FIG. 5 is a perspective view of the pad 11. The height LC of the pad 11 is about 15 μm, and the pad 12 has the same height.

  Further, the chip 10 forms an LCD driver circuit (semiconductor integrated circuit) and input / output terminals (bonding pads) using a semiconductor manufacturing technique in a large number of chip regions partitioned on the main surface of the wafer, and then inputs / output terminals. After the pads 11 are formed by the above method, the wafer can be diced to divide the chip area into pieces. In the present embodiment, the probe inspection is performed on each chip region before dicing the wafer. In the following description of the probe inspection (the step in which the pads 11 and 12 and the probe 7 are in contact), unless otherwise specified, the chip 10 indicates each chip area before dicing the wafer.

  FIG. 6 is a cross-sectional view of the main part showing a method for connecting the chip 10 (after being diced) to the liquid crystal panel. As shown in FIG. 6, the liquid crystal panel is disposed so as to face the glass substrate 16 with the glass substrate 16 having the pixel electrodes 14 and 15 formed on the main surface, the liquid crystal layer 17, and the liquid crystal layer 17, for example. It is formed from a glass substrate 18 or the like. In the present embodiment, the chip 10 (after dicing) is face-down bonded so that the pads 11 and 12 are connected to the pixel electrodes 14 and 15 of the glass substrate 16 of such a liquid crystal panel, respectively. The connection of the chip 10 to the liquid crystal panel can be exemplified.

<Probe placement>
FIG. 7 is an enlarged plan view of a main part of a part of the lower surface of the thin film sheet 2 in which a plurality of probes 7 are formed. FIG. 8 is a schematic view taken along the line BB in FIG. FIG. 9 is a fragmentary sectional view, FIG. 9 is a fragmentary sectional view taken along the line CC in FIG. 7, and FIG. 10 is an enlarged sectional view showing the principal portion of the thin film sheet forming the probe card of the first embodiment. FIG.

  The probe 7 is a part of the metal films 21A and 21B patterned into a planar hexagonal shape in the thin film sheet 2, and a tetragonal pyramid or a quadrangular pyramid trapezoid is formed on the lower surface of the thin film sheet 2 of the metal films 21A and 21B. It is the part that pops out into the mold. The probe 7 is arranged on the lower surface 2b of the thin film sheet 2 in accordance with the positions of the pads 11 and 12 (see FIG. 4) formed on the chip 10 (see FIG. 4), and corresponds to the pad 11 in FIG. The arrangement of the probes 7A and 7B is shown. Among these probes 7, the probe 7 </ b> A corresponds to the pad 11 in an array (hereinafter referred to as the first row) that is relatively close to the outer periphery of the chip 10 among the pads 11 arranged in two rows, and the probe 7 </ b> B is Of the pads 11 arranged in two rows, the pads 11 correspond to the pads 11 that are relatively far from the outer periphery of the chip 10 (hereinafter referred to as the second row). Further, the distance between the probe 7A and the probe 7B present at the closest position is defined by the distance LX in the left-right direction and the distance LY in the up-down direction on the paper surface illustrated in FIG. This is about 34 μm, which is half of the pitch LP where the matching pads 11 are arranged. In the present embodiment, the distance LY is about 93 μm. Further, as shown in FIG. 10, the height LZ (needle height) from the surface of the polyimide film 22 to the tips of the probes 7A and 7B is 50 μm or less (at most 90 μm or less), more preferably 30 μm or less. ing.

  The metal films 21A and 21B are formed, for example, by sequentially laminating a rhodium film and a nickel film from the lower layer. A polyimide film 22 is formed on the metal films 21A and 21B, and wirings (second wirings) 23 that are electrically connected to the metal films 21A and 21B are formed on the polyimide film 22. The wiring 23 is in contact with the metal films 21 </ b> A and 21 </ b> B at the bottom of the through hole 24 formed in the polyimide film 22. A polyimide film 25 is formed on the polyimide film 22 and the wiring 23.

  As described above, a part of the metal films 21A and 21B becomes the probes 7A and 7B formed in a quadrangular pyramid shape or a quadrangular pyramid trapezoidal shape, and a through hole 24 reaching the metal films 21A and 21B is formed in the polyimide film 22. The Therefore, if the planar pattern of the metal film 21A and the through hole 24 in which the probe 7A is formed and the planar pattern of the metal film 21B and the through hole 24 in which the probe 7B is formed are arranged in the same direction, they are adjacent to each other. There is a concern that the metal film 21A and the metal film 21B come into contact with each other, so that independent input / output cannot be obtained from the probes 7A and 7B. Therefore, in the present embodiment, as shown in FIG. 7, the planar pattern of the metal film 21B and the through hole 24 in which the probe 7B is formed is the same as the planar pattern of the metal film 21A and the through hole 24 in which the probe 7A is formed. The pattern is rotated by 180 °. Thereby, a wide area of the metal film 21A in which the probe 7A and the through hole 24 are arranged in a plane and a wide area of the metal film 21B in which the probe 7B and the through hole 24 are arranged in a plane are left and right in the drawing. Are not arranged on the straight line, and the planarly tapered regions of the metal film 21A and the metal film 21B are arranged on the straight line in the left-right direction on the paper surface. As a result, it is possible to prevent a problem that the adjacent metal film 21A and the metal film 21B come into contact with each other. Even if the pads 11 (see FIG. 4) are arranged at a narrow pitch, the probes 7A and 7B can be arranged at positions corresponding to the pads 11 (see FIG. 4).

  In this embodiment, the case where the pads 11 are arranged in two rows has been described with reference to FIG. 4, but there are also chips arranged in one row as shown in FIG. 11. Such a chip can be dealt with by using a thin film sheet 2 in which the wide region of the metal film 21A is arranged on a straight line in the left-right direction on the paper surface, as shown in FIG. Further, the pads 11 are arranged in a row in this way, and have a long side length LA of about 140 μm extending in a direction intersecting (orthogonal) with the outer periphery of the chip 10, for example, and extending along the outer periphery of the chip 10. When the short side length LB is about 19 μm, the pitch LP at which the adjacent pads 11 are arranged is about 34 μm, and the interval between the adjacent pads 11 is about 15 μm, it is shown in FIG. Since the long side is about twice or more compared to the pad 11 and the center position of the pad 11 in the short side direction can be aligned with the center position of the pad 11 shown in FIG. 4, FIG. 7 to FIG. 9 are used. The described thin film sheet 2 can be used, and the probes 7A and 7B come into contact with the pad 11 at the positions POS1 and POS2 shown in FIG.

  In addition, when the number of pads 11 is larger, the pads 11 may be arranged in three or more rows. FIG. 14 is a main part plan view of the thin film sheet 2 corresponding to the pads 11 arranged in three rows, and FIG. 15 is a main part plan view of the thin film sheet 2 corresponding to the pads 11 arranged in four rows. If the size of the chip 10 is the same, the distance LX described with reference to FIG. 7 becomes further narrower as the number of pads 11 arranged increases, so that the metal film including the metal films 21A and 21B comes into contact. There is further concern. Therefore, as shown in FIGS. 14 and 15, the metal films 21A, 21B, 21C, and 21D are obtained by, for example, rotating the planar pattern of the metal film 21A shown in FIG. , 21B, 21C, 21D can be prevented from contacting each other. Although the example in which the planar pattern of the metal film 21A shown in FIG. 7 is rotated by 45 ° has been described here, it is not limited to 45 °, and the metal films 21A, 21B, 21C, and 21D are in contact with each other. Other rotation angles may be used as long as they can be prevented. The metal film 21C is provided with a probe 7C corresponding to the pad 11 disposed inside the chip 10 further than the pad 11 to which the probe 7B corresponds, and the metal film 21D has a pad 11 to which the probe 7C corresponds. Further, a probe 7D corresponding to the pad 11 arranged inside the chip 10 is formed.

  Here, FIG. 16 is a cross-sectional view of main parts along the line DD in FIG. 15, and FIG. 17 is a cross-sectional view of main parts along the line EE in FIG. As shown in FIG. 15, when the metal films 21A to 21D having the probes 7A to 7D corresponding to the four rows of pads 11 are arranged, the wirings electrically connected to the metal films 21A to 21D from the upper layer, respectively. It is difficult to form all of the above with the same wiring layer. This is because when the distance LX is reduced, the metal films 21A to 21D may be brought into contact with each other, and wirings electrically connected to the metal films 21A to 21D may be brought into contact with each other. is there. Therefore, in the present embodiment, as shown in FIGS. 16 and 17, it can be exemplified that these wirings are formed from two wiring layers (wirings 23 and 26). A polyimide film 27 is formed on the wiring 26 and the polyimide film 25. The relatively lower wiring 23 is in contact with the metal films 21A and 21C at the bottom of the through hole 24 formed in the polyimide film 22, and the relatively upper wiring 26 is a through hole 28 formed in the polyimide films 22 and 25. In contact with the metal films 21B and 21D. As a result, in the same wiring layer, it is possible to ensure a large interval between the adjacent wirings 23 or 26, thereby preventing a problem that the adjacent wirings 23 or 26 are in contact with each other. In addition, when the pads 11 have five or more rows and the number of probes corresponding to the pads 11 increases and the distance LX becomes narrow, the wiring interval may be widened by forming wiring layers in multiple layers.

<Detailed structure and manufacturing method of thin film sheet>
Next, the structure of the thin film sheet 2 of the present embodiment will be described with reference to FIGS. 18 to 23 are cross-sectional views of the main part during the manufacturing process of the thin film sheet 2 having the probes 7A and 7B corresponding to the two rows of pads 11 (see FIG. 4) described with reference to FIGS. .

  First, as shown in FIG. 18, a wafer 31 made of silicon having a thickness of about 0.2 mm to 0.6 mm is prepared, and a silicon oxide film 32 having a thickness of about 0.5 μm is formed on both surfaces of the wafer 31 by a thermal oxidation method. Form. Subsequently, the silicon oxide film 32 on the main surface side of the wafer 31 is etched using the photoresist film as a mask, and an opening reaching the wafer 31 is formed in the silicon oxide film 32 on the main surface side of the wafer 31. Next, using the remaining silicon oxide film 32 as a mask, the wafer 31 is anisotropically etched using a strong alkali aqueous solution (for example, potassium hydroxide aqueous solution), so that the main surface of the wafer 31 is surrounded by the (111) plane. A quadrangular pyramid type or quadrangular pyramid shaped hole 33 is formed.

  Next, as shown in FIG. 19, the silicon oxide film 32 used as a mask when forming the hole 33 is removed by wet etching using a mixed solution of hydrofluoric acid and ammonium fluoride. Subsequently, a silicon oxide film 34 having a thickness of about 0.5 μm is formed on the entire surface of the wafer 31 including the inside of the hole 33 by performing a thermal oxidation process on the wafer 31. Next, a conductive film 35 is formed on the main surface of the wafer 31 including the inside of the hole 33. The conductive film 35 can be formed, for example, by sequentially depositing a chromium film having a thickness of about 0.1 μm and a copper film having a thickness of about 1 μm by a sputtering method or a vapor deposition method. Next, a photoresist film is formed on the conductive film 35, and the photoresist film in a region where the metal films 21A and 21B (see FIGS. 7 to 9) are formed in a later process by a photolithography technique is removed. An opening is formed.

  Next, a conductive film 37 and a conductive film 38 having high hardness are sequentially deposited on the conductive film 35 appearing at the bottom of the opening of the photoresist film by an electrolytic plating method using the conductive film 35 as an electrode. . In the present embodiment, the conductive film 37 may be a rhodium film, and the conductive film 38 may be a nickel film. Through the steps so far, the above-described metal films 21A and 21B can be formed from the conductive films 37 and 38. Further, the conductive films 37 and 38 in the hole 33 become the above-described probes 7A and 7B. The conductive film 35 is removed in a later step, which will be described later.

  In the metal films 21 </ b> A and 21 </ b> B, when the above-described probes 7 </ b> A and 7 </ b> B are formed in a later process, the conductive film 37 formed from the rhodium film becomes the surface, and the conductive film 37 is in direct contact with the pad 11. become. For this reason, it is preferable to select a material having high hardness and excellent wear resistance as the conductive film 37. Further, since the conductive film 37 is in direct contact with the pad 11, if the chips 11 scraped by the probes 7 </ b> A and 7 </ b> B adhere to the conductive film 37, a cleaning process is required to remove the chips, and the probe inspection process. There is a concern that it will extend. Therefore, as the conductive film 37, it is preferable to select a material to which the material forming the pad 11 is difficult to adhere. Therefore, in the present embodiment, a rhodium film that satisfies these conditions is selected as the conductive film 37. Thereby, the cleaning process can be omitted.

  Next, after removing the photoresist film used to form the metal films 21A and 21B (conductive films 37 and 38), the metal films 21A and 21B and the conductive film 35 are covered as shown in FIG. Thus, a polyimide film 22 (see also FIGS. 8 and 9) is formed. Subsequently, the aforementioned through hole 24 reaching the metal films 21 </ b> A and 21 </ b> B is formed in the polyimide film 22. The through hole 24 can be formed by drilling using a laser or dry etching using an aluminum film as a mask.

  Next, as shown in FIG. 21, a conductive film 42 is formed on the polyimide film 22 including the inside of the through hole 24. The conductive film 42 can be formed, for example, by sequentially depositing a chromium film having a thickness of about 0.1 μm and a copper film having a thickness of about 1 μm by a sputtering method or a vapor deposition method. Subsequently, after a photoresist film is formed on the conductive film 42, the photoresist film is patterned by a photolithography technique, and an opening reaching the conductive film 42 is formed in the photoresist film. Next, a conductive film 43 is formed on the conductive film 42 in the opening by plating. In the present embodiment, the conductive film 43 can be exemplified by a copper film or a laminated film in which a copper film and a nickel film are sequentially deposited from the lower layer.

  Next, after removing the photoresist film, the conductive film 42 is etched using the conductive film 43 as a mask, thereby forming the wiring 23 composed of the conductive films 42 and 43. The wiring 23 can be electrically connected to the metal films 21 </ b> A and 21 </ b> B at the bottom of the through hole 24.

  Next, as shown in FIG. 22, the polyimide film 25 is formed on the main surface of the wafer 31. In this step, for example, after a paste-like polyimide precursor is applied to the surfaces of the polyimide film 22 and the wiring 23, this can be imidized to form a film.

  Next, as shown in FIG. 23, the silicon oxide film 34 on the back surface of the wafer 31 is removed by etching using, for example, a mixed solution of hydrofluoric acid and ammonium fluoride. Subsequently, the wafer 31 which is a mold material for forming the thin film sheet 2 is removed by etching using a strong alkaline aqueous solution (for example, potassium hydroxide aqueous solution). Next, the silicon oxide film 34 and the conductive film 35 are sequentially removed by etching. At this time, the silicon oxide film 34 is etched using a mixed solution of hydrofluoric acid and ammonium fluoride, and the chromium film contained in the conductive film 35 is etched using a potassium permanganate aqueous solution and contained in the conductive film 35. The copper film to be etched is etched using an alkaline copper etchant. Through the steps so far, the rhodium film as the conductive film 37 (see FIG. 19) forming the probes 7A and 7B appears on the surfaces of the probes 7A and 7B, and the thin film sheet 2 is obtained. As described above, in the probes 7A and 7B having the rhodium film formed on the surface, Au or the like, which is the material of the pad 11 that the probes 7A and 7B are in contact with, is less likely to adhere, has a higher hardness than Ni, and is not easily oxidized. Contact resistance can be stabilized.

<Probe inspection>
Next, the state of the contact surface between the elastomer sheet and the thin film sheet when performing probe inspection using the probe card of the present embodiment will be described in comparison with a comparative example of the present embodiment.

  FIG. 24 is an enlarged sectional view of a contact surface between an elastomer sheet and a thin film sheet when performing a probe inspection using the probe card of the present embodiment, and FIG. 25 is a probe card which is a comparative example of the present embodiment. It is an expanded sectional view of the contact surface of an elastomer sheet and a thin film sheet when performing probe inspection.

  24, in the probe card of the present embodiment, an elastomer sheet 45 and a polyimide sheet 46 are arranged in this order on the upper surface 2a of the thin film sheet 2. On the other hand, a polyimide sheet 46 and an elastomer sheet 45 are arranged in this order on the upper surface 2a of the thin film sheet 2 of the probe card which is a comparative example of the present embodiment shown in FIG.

  Here, the surface of the upper surface 2a of the thin film sheet 2 has fine irregularities on the order of microns as shown in FIGS. Such unevenness is formed, for example, when the portion covering the wiring 23 rises following the wiring 23 when the polyimide film 25 described in FIG. 22 is formed. Further, for example, when the completed thin film sheet 2 is assembled, fine wrinkles may be generated, which may be uneven on the surface of the upper surface 2 a of the thin film sheet 2.

  As shown in FIG. 25, when the polyimide sheet 46 is opposed to the upper surface 2a of the thin film sheet 2 having an uneven surface, the polyimide sheet 46 has high rigidity, so that a gap 47 is generated on the contact surface.

  When the pressing tool 9 is pressed in this state, a strong load is transmitted to a region where the polyimide sheet 46 and the thin film sheet 2 are in contact, and a weak load is transmitted to a region where the gap 47 is generated. That is, the surface pressure distribution (the load distribution on the plane) varies.

  For this reason, variation occurs in contact pressure between the plurality of probes 7 formed on the lower surface 2b of the thin film sheet 2 shown in FIG. 2 and the plurality of pads 11 and 12 (see FIG. 4) formed on the main surface of the chip 10. .

  Therefore, in the present embodiment, as shown in FIG. 24, the elastomer sheet 45 is configured to be opposed to the upper surface 2a of the thin film sheet 2 having an uneven surface. The elastomer sheet 45 is softer than the polyimide sheet 46 and easily deforms. For this reason, when it presses with the pressing tool 9, it deform | transforms along the unevenness | corrugation of the upper surface 2a of the thin film sheet 2, as shown in FIG. That is, the generation of the gap 47 as shown in FIG. 25 can be suppressed.

  Therefore, since the load transmitted from the pressing tool 9 can be distributed more uniformly, the probe 7 formed on the lower surface 2b of the thin film sheet 2 shown in FIG. 2 and the main surface of the chip 10 are formed. The contact pressure with the pads 11 and 12 (see FIG. 4) can be kept within a predetermined range.

  That is, it is possible to prevent or suppress damage to the tip 10 and wear of the probe 7 due to overload from the probe 7. Further, poor contact due to the contact pressure of the probe 7 becoming an underload can be prevented.

  Further, when the ambient temperature during probe inspection is set to a high temperature or a low temperature, the thin film sheet 2, the polyimide sheet 46, the elastomer sheet 45, and the pressing tool 9 are thermally expanded or contracted, respectively.

  In particular, since the pressing tool 9 is made of a metal material such as 42 alloy, its linear expansion coefficient is much higher than that of resin materials such as the polyimide sheet 46 and the elastomer sheet 45. That is, the pressing tool 9 is more easily thermally expanded or contracted than the polyimide sheet 46 and the elastomer sheet 45.

  Here, when the intermediate sheet facing the main surface 9b of the pressing tool 9 is the elastomer sheet 45 as shown in FIG. 25, the friction coefficient of the contact surface is as high as about 0.8. For this reason, the elastomer sheet 45 is pulled and deformed by the thermally deformed pressing tool 9. The direction of this deformation is easily deformed in a direction along the contact surface between the pressing tool 9 and the elastomer sheet 45. On the other hand, the elastomer sheet 45 has a large coefficient of linear expansion and a large degree of deformation. In this case, since the friction coefficient between the lower surface (second main surface) 45b of the elastomer sheet 45 and the upper surface 46a of the polyimide sheet 46 facing the surface is as high as about 0.8, the influence of thermal deformation of the pressing tool 9 is included. In some cases, thermal deformation of the elastomer sheet 45 is transmitted to the polyimide sheet 46 and the polyimide sheet 46 may be affected, for example, wrinkles.

  When wrinkles occur in the polyimide sheet 46, the gap 47 between the polyimide sheet 46 and the upper surface 2a of the thin film sheet 2 increases, so that the surface pressure distribution (on the plane) transmitted from the pressing tool 9 as described above. Load distribution) varies. As a result, variation occurs in contact pressure between the plurality of probes 7 formed on the lower surface 2b of the thin film sheet 2 shown in FIG. 2 and the plurality of pads 11 and 12 (see FIG. 4) formed on the main surface of the chip 10. .

  Therefore, in this embodiment, as shown in FIG. 24, the pressing tool 9 and the polyimide sheet 46 are configured to face each other. The contact surface between the pressing tool 9 and the polyimide sheet 46 is slippery because its friction coefficient is as low as about 0.3. Therefore, when the pressing tool 9 is thermally deformed, the contact surface with the polyimide sheet 46 can be prevented or suppressed. For this reason, even if the pressing tool 9 expands or contracts, the polyimide sheet 46 is not easily affected.

  On the other hand, the friction coefficient of the contact surface between the polyimide sheet 46 and the elastomer sheet 45 is as high as about 0.8. However, since the material in contact with the upper and lower surfaces of the elastomer sheet 45 is a material having a similar linear expansion coefficient, the amount of elongation of the surface of the elastomer sheet 45 is almost the same, and the elastomer sheet 45 is soft and deformed. Since it is easy, it deform | transforms planarly corresponding to a deformation | transformation of the polyimide sheet 46. For this reason, even if the linear expansion coefficients of the polyimide sheet 46 and the elastomer sheet 45 are different, generation of wrinkles of the polyimide sheet 46 or the elastomer sheet 45 can be suppressed. Moreover, the polyimide sheet 46 and the elastomer sheet 45 can maintain a close contact state.

  Therefore, the arrangement pitch of the probes 7 formed on the lower surface 2b of the thin film sheet 2 shown in FIG. 2 only needs to consider the thermal expansion or contraction of the thin film sheet 2 itself, and the pressing tool 9, polyimide sheet 46, elastomer sheet. Since it is not necessary to consider the influence of 45, an easy design is possible.

<Assembly of probe card>
Next, assembly of the probe card according to the present embodiment will be described. 26 and 27 are cross-sectional views of the main part showing the assembly process of the probe card of the present embodiment.

  First, as shown in FIG. 26, the thin film sheet 2 is prepared, and an elastomer sheet 45 and a polyimide sheet 46 are sequentially arranged and laminated on the upper surface 2a side. The planar position where the elastomer sheet 45 and the polyimide sheet 46 are disposed is disposed at a position corresponding to the region where the probe 7 is formed on the lower surface 2b side of the thin film sheet 2.

  In the step of disposing the elastomer sheet 45 and the polyimide sheet 46, it is preferable to dispose the thin film sheet 2 in a flat state (an unbent state) in order to ensure adhesion of each sheet.

  Next, a part (for example, outer edge portion) of the thin film sheet 2 is fixed to the lower surface 1b of the multilayer wiring board 1 by the pressing ring 4 shown in FIG. At this time, since the thin film sheet 2, the elastomer sheet 45, and the polyimide sheet 46 have flexibility, each sheet is bent as shown in FIG.

  Next, as shown in FIG. 27, the pressing tool 9 is pushed downward (in the direction toward the thin film sheet 2), and the thin film sheet 2, the elastomer sheet 45, the polyimide sheet 46, and the pressing tool 9 are brought into close contact with each other.

  Here, when it is set as the structure which does not have the polyimide sheet 46 between the pressing tool 9 and the elastomer sheet 45, it contacts with the elastomer sheet 45 in the state where the outer edge part of the main surface 9b of the pressing tool 9 bent first. . However, since the friction coefficient between the elastomer sheet 45 and the pressing tool 9 is high, the region of the elastomer sheet 45 that is in contact with the outer edge portion of the main surface 9b of the pressing tool 9 is restrained by the pressing tool 9 and corrects the bent state. I can't. For this reason, a large space is formed between the elastomer sheet 45 and the pressing tool 9. Alternatively, large wrinkles are generated in the elastomer sheet 45.

  On the other hand, in the present embodiment, the main surface 9b of the pressing tool 9 and the upper surface 46a of the polyimide sheet 46 face each other. The friction coefficient of the contact surface where the upper surface 46a of the polyimide sheet 46 and the main surface 9b of the pressing tool 9 are opposed to each other is as small as 0.3. Therefore, slip occurs on the contact surface between the polyimide sheet 46 and the pressing tool 9. For this reason, the area | region which contacted the outer edge part of the main surface 9b of the pressing tool 9 of the polyimide sheet 46 is not restrained by the pressing tool 9, and the bending state of the polyimide sheet 46 can be corrected.

  Since the contact surface between the lower surface 45b of the elastomer sheet 45 and the upper surface 2a of the thin film sheet 2 is already in close contact, the thin film sheet 2 and the elastomer sheet 45 are planarized along the main surface 9b of the pressing tool 9 as shown in FIG. Is done. That is, the deflection of each sheet (thin film sheet 2, elastomer sheet 45, polyimide sheet 46) shown in FIG. 26 can be corrected.

  In the present embodiment, an elastomer sheet 45 and a polyimide sheet 46 are sequentially arranged and laminated on the upper surface 2a side of the thin film sheet 2 so that the upper surface 2a of the thin film sheet 2 and the lower surface 45b of the elastomer sheet 45 face each other. However, generation | occurrence | production of a wrinkle and bending can be suppressed. Therefore, the contact pressure between the probe 7 formed on the lower surface 2b of the thin film sheet 2 shown in FIG. 2 and the pads 11 and 12 (see FIG. 4) formed on the main surface of the chip 10 is kept within a predetermined range. Can do.

  In addition, as shown in FIG. 27, the plane area of the upper surface 46 a of the polyimide sheet 46 is preferably larger than the plane area of the main surface 9 b of the pressing tool 9. As shown in FIG. 27, even if slip occurs on the contact surface between the polyimide sheet 46 and the pressing tool 9 when the pressing tool 9 is pressed downward, the entire main surface 9 b of the pressing tool 9 is covered with the polyimide sheet 46. Because you can.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the above embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  For example, in the present embodiment, an example in which one polyimide sheet 46 is disposed on the upper surface 45a of the elastomer sheet 45 has been described, but the number of polyimide sheets 46 is not limited to this. For example, two or more polyimide sheets 46 may be laminated on the upper surface 45 a of the elastomer sheet 45.

  Even in this case, if the upper surface 46a of the uppermost polyimide sheet 46 and the main surface 9b of the pressing tool 9 are in contact with each other, the frictional resistance of the contact surface can be suppressed. The generation of wrinkles in the elastomer sheet 45 can be suppressed.

  In the assembly process, after placing the elastomer sheet 45 on the upper surface 2a of the thin film sheet 2, each of the sheets (thin film sheet 2, elastomer sheet 45, polyimide sheet 46) is sequentially laminated. Can be corrected.

  The semiconductor device manufacturing method of the present invention can be widely applied to, for example, a probe inspection process in a semiconductor device manufacturing process.

It is a principal part top view of the lower surface of the probe card which is one embodiment of this invention. It is sectional drawing along the AA line in FIG. It is a principal part expanded sectional view of the area | region in which the probe of the probe card shown in FIG. 2 was formed. It is a top view of the semiconductor chip of the object which carries out a probe test using the probe card which is one embodiment of the present invention. FIG. 5 is a perspective view of pads formed on the semiconductor chip shown in FIG. 4. FIG. 6 is a cross-sectional view of main parts showing a method for connecting the semiconductor chip shown in FIG. 5 to a liquid crystal panel. It is an enlarged plan view of the contact surface of an elastomer sheet and a thin film sheet when performing probe inspection using the probe card according to one embodiment of the present invention. It is sectional drawing along the BB line in FIG. It is sectional drawing along CC line in FIG. It is sectional drawing which expands and shows the principal part of the thin film sheet which forms the probe card which is one embodiment of this invention. It is a top view of the semiconductor chip of the object which carries out a probe test using the probe card which is one embodiment of the present invention. It is a principal part top view of the thin film sheet which forms the probe card which is one embodiment of this invention. It is a principal part top view which showed the position which a probe contacts on the bump electrode provided in the semiconductor chip of the object which carries out a probe test | inspection using the probe card which is one embodiment of this invention. It is a principal part top view of the thin film sheet which forms the probe card which is one embodiment of this invention. It is a principal part top view of the thin film sheet which forms the probe card which is one embodiment of this invention. It is sectional drawing along the DD line | wire in FIG. It is sectional drawing along the EE line in FIG. It is principal part sectional drawing explaining the manufacturing process of the thin film sheet which forms the probe card which is one embodiment of this invention. It is principal part sectional drawing in the manufacturing process of the thin film sheet following FIG. It is principal part sectional drawing in the manufacturing process of the thin film sheet following FIG. It is principal part sectional drawing in the manufacturing process of the thin film sheet following FIG. It is principal part sectional drawing in the manufacturing process of the thin film sheet following FIG. It is principal part sectional drawing in the manufacturing process of the thin film sheet following FIG. It is a principal part expanded sectional view in the assembly process of the probe card which is one embodiment of this invention. It is an expanded sectional view of the contact surface of an elastomer sheet and a thin film sheet when performing a probe inspection using a probe card which is a comparative example of an embodiment of the present invention. It is principal part sectional drawing in the assembly process of the probe card which is one embodiment of this invention. FIG. 27 is a fragmentary cross-sectional view of the probe card during the assembly process following FIG. 26.

Explanation of symbols

1 Multilayer wiring board (first wiring board)
1a Upper surface (first main surface)
1b Lower surface (second main surface)
2 Thin film sheet (thin film probe, first sheet)
2a Upper surface (first main surface)
2b Lower surface (second main surface)
3 Plunger 3A Spring 3B Plunger support 4 Holding ring (first fixing jig)
5 Opening 6 Adhesive Ring 7, 7A, 7B, 7C, 7D Probe (Contact Terminal)
8 Pogo seat 9 Pressing tool (Pressing mechanism)
9b Main surface 10 chip (chip area)
11, 12 Pad (first electrode)
14, 15 Pixel electrode 16, 18 Glass substrate 17 Liquid crystal layer 21A, 21B, 21C, 21D Metal film 22 Polyimide film 23 Wiring 24 Through hole 25 Polyimide film 26 Wiring 27 Polyimide film 28 Through hole 31 Wafer 32 Silicon oxide film 33 Hole 34 Silicon oxide films 35, 37, 38 Conductive films 42, 43 Conductive film 45 Elastomer sheet (first intermediate sheet)
45a Upper surface (first main surface)
45b Lower surface (second main surface)
46 Polyimide sheet (second intermediate sheet)
46a Upper surface (first main surface)
46b Lower surface (second main surface)
47 Clearance

Claims (3)

(A) A semiconductor wafer partitioned into a plurality of chip regions, each having a device formed in each of the plurality of chip regions, and a plurality of first electrodes electrically connected to the device formed on a main surface thereof. The process to prepare,
(B) With the plurality of contact terminals formed on the second main surface of the first sheet of the probe card in contact with the plurality of first electrodes formed in the chip region of the semiconductor wafer, Performing an electrical inspection of the element formed in the chip region,
The probe card is
The first sheet;
The first sheet is disposed on the first main surface side behind the second main surface of the first sheet, and in the step (b), the first main surface side of the first sheet is pressed, and the plurality of contact terminals are arranged. A pressing mechanism having a pressing tool that presses against the plurality of first electrodes in the chip region of the semiconductor wafer;
An intermediate sheet disposed between the first sheet and the pressing tool;
The intermediate sheet is
A first intermediate sheet disposed to face and face the first main surface of the first sheet;
A second intermediate sheet that is disposed opposite to the pressing tool,
The first intermediate sheet is formed of an elastomer,
A semiconductor device manufacturing method, wherein a friction coefficient when the second intermediate sheet and the pressing tool are brought into contact is smaller than a friction coefficient when the first intermediate sheet and the pressing tool are brought into contact with each other. Method. In the manufacturing method of the semiconductor device according to claim 1,
The method for manufacturing a semiconductor device, wherein the second intermediate sheet is formed of polyimide. In the manufacturing method of the semiconductor device according to claim 1,
The method for manufacturing a semiconductor device, wherein the intermediate sheet is arranged by sequentially laminating the first intermediate sheet and the second intermediate sheet from the first main surface side of the first sheet.

Images