JP2009120888A - Vapor deposition apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To carry out stable film deposition by facilitating temperature control of material discharge ports by the arrangement of evaporation source groups. <P>SOLUTION: A vapor deposition apparatus 1 is equipped with a plurality of evaporation source groups 7 in each of which three or more material discharge ports 8a, 9b, 8c for discharging evaporation materials having different set temperatures are arranged in one line. The plurality of evaporation source groups 7 are arranged so that the set temperatures of adjacent material discharge ports 8c(8a) of each evaporation source group become the same set temperature, and at least one of the evaporation source group and a member to be vapor deposited is made movable toward the other. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a deposition apparatus that deposits a deposition material on a member to be deposited.

  In film formation by vacuum vapor deposition, a plurality of evaporation sources are used in order to reduce the film thickness distribution and multiple co-evaporation in which a plurality of materials are evaporated at the same time. For example, also in the manufacture of an organic EL element, film formation by a plurality of evaporation sources corresponding to an increase in vapor deposition area and multiple co-evaporation for improving film quality is performed.

  At the time of multi-source co-deposition, it is necessary to bring the outlets of the materials close to each other so that the materials to be evaporated are mixed more uniformly. However, each material often has a different evaporation temperature. For this reason, if the discharge port is too close, it becomes difficult to control the evaporation temperature due to thermal interference due to the different set temperatures. Furthermore, when the evaporation temperature difference of each material is large, if the discharge port is too close, the other material decomposition temperature may be exceeded, and the low temperature side material may be decomposed.

  Further, when arranging a plurality of evaporation sources, it is not preferable that there is a restriction on the arrangement in order to realize a more uniform film thickness distribution. In some cases, it is necessary to bring the evaporation source closer, in which case temperature control is also difficult, and decomposition of the material may occur.

  In order to deal with such problems, the outlets of different materials are arranged concentrically and a heat insulating material is provided between the outlets to mix each material more uniformly and reduce the temperature effect between the outlets. There exists a vapor deposition apparatus (patent document 1).

JP 2005-336527 A

  However, in the conventional vapor deposition apparatus, it is necessary to provide the other material guide tube and the discharge port inside the one material guide tube and the discharge port, and when there are three or more types of materials to be used, the two types illustrated In this case, the structure is further complicated, and the manufacturing cost and maintenance cost may increase.

  An object of the present invention is to provide a vapor deposition apparatus capable of forming a stable film by easily controlling the temperature of a material discharge port by arranging an evaporation source group.

  The vapor deposition apparatus of the present invention includes a plurality of evaporation source groups in which three or more material discharge ports having different set temperatures of the evaporation material are arranged in a line, and the plurality of evaporation source groups are adjacent to the respective evaporation source groups. The material discharge port is disposed so that the set temperature is the same, and at least one of the evaporation source group and the deposition target member is movable with respect to the other.

  In the vapor deposition apparatus of the present invention, the plurality of evaporation source groups are arranged so that the set temperatures of the adjacent material discharge ports of each evaporation source group are the same set temperature, so that the heat interference between the material discharge ports The temperature of the material discharge port can be easily controlled.

  Moreover, the vapor deposition apparatus of this invention can suppress decomposition | disassembly of the low temperature side material by the heat influence of material discharge outlets, and can raise the freedom degree of arrangement | positioning of an evaporation source. Furthermore, the vapor deposition apparatus of the present invention can widen the selection range of materials.

  Hereinafter, the vapor deposition apparatus of embodiment of this invention is demonstrated based on drawing. In addition, this invention is not limited to the following embodiment.

  FIG. 1 is a schematic configuration diagram of a vapor deposition apparatus according to an embodiment of the present invention. As shown in FIG. 1, the vapor deposition apparatus 1 includes a film formation chamber 2. The film forming chamber 2 is connected to a vacuum exhaust device (not shown) and the inside thereof is maintained at a pressure suitable for film forming. The film forming chamber 2 is provided with an input unit 3 and a discharge unit 4, which are connected to a pre-process and a post-process, respectively. The film forming chamber 2 includes a transfer device (not shown). The substrate 5 is supported by the transfer device and is transferred in the order of the arrow A in the figure in the order of the input unit 3, the film formation chamber 2, and the discharge unit 4. An evaporation source group 7 is disposed at the bottom of the film forming chamber 2. The evaporation source group 7 is heated by resistance heating or the like to evaporate the film material (evaporation material). The evaporated film material adheres as a vapor deposition material to the surface of the substrate 5 as a vapor deposition member. For controlling the evaporation amount of the film material, the evaporation amount of each material is measured by an evaporation amount measuring device 6 appropriately disposed for each material, and the resistance heating temperature of the evaporation source group 7 is controlled based on the result. Is done. In addition, although the vapor deposition apparatus 1 of this embodiment moves the board | substrate 5, at least one of the board | substrate 5 and the evaporation source group 7 should just be movable with respect to the other.

  FIG. 2 is a plan view of the vapor deposition apparatus shown in FIG. 1 and shows the arrangement of the evaporation source group 7. The vapor deposition apparatus 1 includes three groups (a plurality are provided) of evaporation source groups 7 including three material discharge ports 8a, 8b, and 8c having different set temperatures. The material discharge port is not limited to three. Any number of 3 or more is acceptable. Further, the evaporation source group 7 is not limited to three groups. Any number can be used.

  The three material discharge ports 8a, 8b, 8c are arranged in a straight line in a direction orthogonal to the direction of arrow A (movable direction) in which the substrate 5 moves so that different materials can be discharged. It has become. The three evaporation source groups 7 are arranged in a direction orthogonal to the direction in which the substrate 5 moves, so that the set temperatures of the adjacent material discharge ports 8c (8a) of the respective evaporation source groups are the same set temperature. It is arranged.

  Here, the relationship between the set temperatures Ta, Tb, and Tc of the material discharge ports 8a, 8b, and 8c satisfies Ta> Tb> Tc. The material discharge ports 8a, 8b, and 8c each include a heater for heating, and the temperature of the discharge port is controlled according to the result of the evaporation amount measuring device 6.

  By arranging the evaporation source groups as described above, the temperature difference between the material discharge ports 8c (8a) of the adjacent evaporation source groups is reduced, so that thermal interference is prevented and temperature control of each discharge port is facilitated. can do. Further, even when the temperature difference between the material discharge ports is large, the decomposition of the low temperature side material can be prevented.

  FIG. 3 shows another arrangement of the evaporation source group.

  Here, the evaporation source group 7 includes six evaporation source groups each including three kinds of material discharge ports 8a, 8b, and 8c having different temperatures.

  The three material discharge ports 8a, 8b, and 8c of each evaporation source group 7 are arranged in a straight line in the direction in which the substrate 5 moves so that different materials are discharged. The six evaporation source groups 7 are arranged in three rows (arranged in a plurality of rows) in parallel to the direction in which the substrate 5 moves, and the set temperature of the adjacent material discharge ports in the adjacent evaporation source groups is the same. It is arranged to be at temperature.

  Note that the material discharge ports adjacent to each other in the evaporation source groups adjacent to each other and the material discharge ports adjacent to each other in the evaporation source groups adjacent to each other in the direction in which the substrate 5 moves are perpendicular to the direction in which the substrate 5 moves. There are adjacent material outlets in each evaporation source group. The material discharge port adjacent to each evaporation source group adjacent in the direction in which the substrate 5 moves includes a material discharge port indicated by reference numeral 8c. The material discharge ports adjacent to each other in the evaporation source groups adjacent in the direction orthogonal to the direction in which the substrate 5 moves include material discharge ports indicated by reference numerals 8a, 8b, and 8c.

  Even in such an arrangement, the relationship between the set temperatures Ta, Tb, and Tc of the material discharge ports 8a, 8b, and 8c satisfies Ta> Tb> Tc.

  By arranging the evaporation source groups as shown in FIG. 3, the temperature difference between the material discharge ports adjacent to each other in the adjacent evaporation source groups is reduced, thereby preventing thermal interference and facilitating temperature control of each discharge port. Can do. Further, even when the temperature difference between the material discharge ports is large, the decomposition of the low temperature side material can be prevented.

  FIG. 4 shows still another arrangement of the evaporation source group.

  Here, the evaporation source group 7 includes four evaporation source groups each including three types of material discharge ports 8a, 8b, and 8c having different temperatures, and the adjacent material discharge ports 8a have the same temperature between the adjacent evaporation source groups. It is arranged radially so as to be.

  That is, the three material discharge ports 8a, 8b, and 8c of each evaporation reduction group 7 are arranged in a diagonal line with respect to the direction of the arrow A in which the substrate 5 moves so that different materials are discharged. ing. The four evaporation source groups 7 are arranged obliquely with respect to the arrow A direction in which the substrate 5 moves.

  Also in the arrangement shown in FIG. 4, the relationship between the set temperatures Ta, Tb, and Tc of the material discharge ports 8a, 8b, and 8c satisfies Ta> Tb> Tc.

  By arranging the evaporation source groups in this way, the temperature difference between the material discharge ports 8a adjacent to each other in the adjacent evaporation source groups is reduced, so that thermal interference can be prevented and temperature control of each discharge port can be facilitated. . Further, even when the temperature difference between the material discharge ports is large, the decomposition of the low temperature side material can be prevented.

  The material discharge ports 8a, 8b, and 8c are arranged in a straight line, but may be arranged so as to hit a wave. That is, the material discharge ports 8a, 8b, and 8c may be arranged in a line without being arranged in a circle. The evaporation source groups are also arranged in a straight line, but may be arranged so as to make waves.

It is a schematic block diagram of the vapor deposition apparatus which concerns on embodiment of this invention. It is a top view of the vapor deposition apparatus shown in FIG. 1, and is a figure which shows arrangement | positioning of an evaporation source group. It is a figure which shows the other arrangement | sequence of an evaporation source group different from FIG. It is a figure which shows other arrangement | sequence of the evaporation source group different from FIG.

Explanation of symbols

A. An arrow indicating a moving direction of a substrate 1 Vapor deposition apparatus 2 Film forming chamber 3 Input portion 4 Discharge portion 5 Substrate (deposition member)
6 Evaporation Measurement Device 7 Evaporation Source Group 8a Material Release Port 8b Material Release Port 8c Material Release Port

Claims (6)

A plurality of evaporation source groups in which three or more material discharge ports having different set temperatures of the evaporation material are arranged in a line;
The plurality of evaporation source groups are arranged such that the set temperature of adjacent material discharge ports of each evaporation source group is the same set temperature,
At least one of the evaporation source group and the evaporation target member is movable relative to the other;
The vapor deposition apparatus characterized by the above-mentioned. The material discharge port next to each evaporation source group discharges the evaporation material of the same material,
The vapor deposition apparatus according to claim 1. The plurality of evaporation source groups are arranged in a direction orthogonal to the movable direction.
The vapor deposition apparatus of Claim 1 or 2 characterized by the above-mentioned. The plurality of evaporation source groups are arranged in a plurality of rows in the movable direction.
The vapor deposition apparatus of Claim 1 or 2 characterized by the above-mentioned. The plurality of evaporation source groups are arranged obliquely with respect to the movable direction.
The vapor deposition apparatus of Claim 1 or 2 characterized by the above-mentioned. The material discharge ports are arranged in a straight line,
The vapor deposition apparatus of any one of Claims 1 thru | or 5 characterized by the above-mentioned.

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