JP2009108390A - Film deposition system and film deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film deposition system and a film deposition method with which maintenance time can be reduced, and productivity of a thin film is improved. <P>SOLUTION: A catalyst CVD chamber 13 is mounted with a retreat chamber 31 elongating along the facial direction of a substrate S lying at a film deposition position, a holder 33 stored in the retreat chamber 31 is elevated, and respective catalyst lines 35 are selectively arranged at a film deposition chamber 21 and the retreat chamber 31, respectively. Then, in the case a film deposition gas is fed to the film deposition chamber 21, the respective catalyst lines 35 are moved to the film deposition chamber 21, respectively, and, in the case a cleaning gas is fed to the film deposition chamber 21, the respective catalyst lines 35 are moved to the retreat chamber 31, respectively, and a gate valve GV2 is closed. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a film forming apparatus and a film forming method.

  As a manufacturing technique of a semiconductor device, a chemical vapor deposition (CVD) method in which a thin film is formed on a substrate using a chemical reaction is used. As the CVD method, for example, a plasma CVD method using a plasma source in a reaction system and a thermal CVD method using substrate heating are known.

  In the plasma CVD method and the thermal CVD method, the substrate is exposed to the plasma space, or the substrate is heated to a high temperature, so that the substrate and the base film are easily damaged electrically and thermally. In addition, in the plasma CVD method and the thermal CVD method, since high uniformity is required for the plasma density and the substrate temperature in order to obtain the uniformity of the film thickness and film quality, it is difficult to cope with the enlargement of the substrate. Therefore, in the manufacturing technology of semiconductor devices, conventionally, in order to solve the above problem, catalytic CVD method in which a source gas is brought into contact with a heated catalyst wire such as tungsten to decompose the source gas into a film-forming species has attracted attention. (For example, patent document 1).

Catalytic CVD, which uses catalytic action for film-forming reactions, has the surface of the catalyst wire responsible for the progress of the chemical reaction and does not require plasma irradiation or high-temperature heating of the substrate. , Thermal damage can be greatly suppressed. In addition, since the catalytic CVD method can expand the reaction space simply by increasing the number of catalyst wires, it can relatively easily cope with the increase in size of the substrate.
Patent No. 3780364

  When the film formation process is continuously performed using the CVD method, a chemical reaction related to film formation is repeated in the film formation chamber, so that part of the film formation species continues to be deposited in the film formation chamber. The film-forming residue deposited in the film-forming chamber is scattered on the substrate to increase particles or cause a change in the film-forming process over time. Therefore, in a CVD apparatus, it is generally necessary to periodically perform so-called cleaning, in which an active species such as halogen is supplied to the film formation chamber to chemically remove film formation residues.

  However, when the cleaning process is performed using the catalytic CVD chamber, the catalyst line continues to be eroded by the reaction between the catalyst line and the cleaning gas, and eventually the catalytic action is lost due to the disconnection of the catalyst line. In order to replace the eroded catalyst wire, the film forming chamber must be opened to the atmosphere. Every time the catalyst wire is replaced, the film forming environment such as the degree of vacuum and temperature of the film forming chamber greatly fluctuates. Invites a lot of maintenance time.

  The present invention has been made to solve the above problems, and an object of the present invention is to provide a film forming apparatus and a film forming method capable of reducing maintenance time and improving thin film productivity.

The film forming apparatus according to claim 1 is a film forming apparatus having a film forming chamber for forming a thin film on a contained substrate, and selectively supplying a film forming gas and a cleaning gas to the film forming chamber. A gas supply unit, a retraction chamber connected to the film formation chamber and extending along one surface direction of the substrate, a holder housed in the retraction chamber and movable along the surface direction, and the holder And a holder for selectively disposing the catalyst wire in the film forming chamber and the retracting chamber by reciprocating the holder along the surface direction. A drive unit, and a valve that opens and closes a communication path between the evacuation chamber and the film formation chamber. When the gas supply unit supplies the film formation gas, the holder drive unit includes the catalyst. The wire is moved to the film forming chamber, and the gas supply unit is When supply of Gugasu, the holder driving unit moves the said catalytic wire to the lay-by chambers, the valve is summarized in that closing the communication passage.

  The film forming apparatus according to claim 1 moves the catalyst wire at the time of film formation to the film forming chamber and moves the catalyst wire at the time of cleaning to an isolated retreat chamber. Deterioration can be reliably suppressed. Therefore, this film forming apparatus can greatly reduce the exchange frequency of the catalyst wire. In addition, since the present film forming apparatus can eliminate the restrictions related to the catalyst line in the selection of cleaning conditions, the selection range of the cleaning conditions can be expanded, and the cleaning time of the film forming chamber can be shortened. In addition, since the film forming apparatus limits the moving direction of the catalyst wire to the surface direction of the substrate, it can obtain a higher accuracy in the position of the catalyst wire after the movement than in the case of moving in multiple directions. The time for adjusting the position of the line can be reduced. As a result, the film forming apparatus can improve the productivity of the thin film by reducing various maintenance times.

  The film forming apparatus according to claim 2 is the film forming apparatus according to claim 1, wherein when the gas supply unit is driven to supply the film forming gas, the valve is driven to When opening the communication path and driving the holder driving unit to move the catalyst wire in the retracting chamber to the film forming chamber and driving the gas supply unit to supply the cleaning gas, The gist of the present invention is to have a control unit that drives the valve and then closes the communication path after driving the holder driving unit to move the catalyst wire in the film forming chamber to the retracting chamber.

  According to a second aspect of the present invention, the catalyst wire at the time of film formation is moved to the film formation chamber and the catalyst wire at the time of cleaning is moved to the retreat chamber by driving each part by the control unit. Therefore, since this film-forming apparatus can suppress reliably deterioration of a catalyst wire, it can improve the productivity of a thin film reliably.

  The film forming apparatus according to claim 3 is the film forming apparatus according to claim 1 or 2, wherein the retracting chamber includes a door that allows the catalyst wire to be taken out by opening the interior of the retracting chamber. It is summarized as having.

  Since the catalyst wire can be taken out from the isolated retreat chamber, the film forming apparatus according to claim 3 can maintain the film forming environment of the film forming chamber when the catalyst wire is replaced. Therefore, this film forming apparatus can extend the life of the catalyst wire and can reduce the maintenance time associated with the return operation of the film forming environment, thereby further improving the productivity of the thin film.

  A film forming apparatus according to claim 4 is the film forming apparatus according to any one of claims 1 to 3, further comprising a stage for supporting the substrate in a standing state, wherein the surface direction is vertical. The gist is the direction.

  In the film forming apparatus according to the fourth aspect of the present invention, since the retracting chamber extending along the vertical direction is provided, an increase in the occupied area (footprint) associated with an increase in the size of the substrate, that is, an increase in the size of the catalyst wire can be suppressed. Further, since the film-forming residue that peels off from the film-forming chamber scatters in the vertical direction, the adsorption probability of the film-forming residue on the main surface of the substrate can be reduced, thereby reducing the number of particles. Therefore, this film forming apparatus can further improve the productivity of the thin film and can greatly reduce the restrictions on the apparatus design accompanying the increase in the size of the substrate, so that the application range can be further expanded.

  The film forming apparatus according to claim 5 is the film forming apparatus according to claim 4, wherein the holder suspends a plurality of the catalyst wires downward in the vertical direction, and the holder driving unit is configured to supply the gas. When the unit supplies the film forming gas, the catalyst lines are arranged in the normal direction of the substrate by moving the catalyst lines downward in the vertical direction, and the gas supply unit is configured to supply the cleaning gas. When supplying the catalyst, the gist is that the catalyst wires are arranged in the retreat chamber by moving the catalyst wires vertically upward.

  In the film forming apparatus according to the fifth aspect, since each catalyst line is arranged in the normal direction of the substrate, it is possible to cope with an increase in the size of the substrate only by changing the size or quantity of the catalyst lines. Therefore, this film forming apparatus can improve the productivity of the thin film and can greatly reduce the restrictions on the apparatus design accompanying the increase in the size of the substrate, so that the application range can be further expanded.

  The film forming apparatus according to claim 6 is the film forming apparatus according to claim 5, wherein the gas supply unit sprays the film forming gas toward the substrate to face the substrate. The retracting chamber is disposed vertically above the substrate and the shower plate, and the holder driving unit is configured to supply the film forming gas when the gas supply unit supplies the film forming gas. The gist is to arrange the catalyst wire between the substrate and the shower plate.

  According to the film forming apparatus of the sixth aspect, the film forming gas supplied from the shower plate reaches the substrate through the catalyst wire. Therefore, this film forming apparatus can use the film forming gas with higher reaction efficiency. Therefore, this film forming apparatus can improve the productivity of the thin film and can reduce the restrictions on the apparatus design accompanying the film forming process, so that the application range can be further expanded.

The film forming apparatus according to claim 7 is the film forming apparatus according to claim 6, wherein the film forming chamber houses the substrate between the shower plate and an exhaust port. .
According to the film forming apparatus of the seventh aspect, since the film forming gas supplied from the front of the substrate is exhausted toward the rear of the substrate, the adsorption efficiency of the film forming species to the substrate can be improved. Therefore, this film forming apparatus can further improve the productivity of the thin film.

  The film forming apparatus according to claim 8 is the film forming apparatus according to any one of claims 1 to 7, wherein the gas supply unit is an inner wall of the film forming chamber, The gist of the present invention is to diffuse the cleaning gas toward the vicinity of the catalyst wire.

  In the film forming apparatus according to the eighth aspect, the cleaning gas from the gas supply unit is diffused toward the region where the film forming amount is large, so that the film forming residue in the film forming chamber can be efficiently removed. Therefore, since this film forming apparatus can extend the life of the catalyst wire and improve the cleaning efficiency, the productivity of the thin film can be further improved.

  The film forming method according to claim 9 is a film forming method for forming a thin film on a substrate, wherein a catalyst wire is disposed along one surface direction of the substrate carried into the film forming chamber, and the film forming chamber is formed. Forming a thin film on the substrate by bringing a film forming gas supplied to the catalyst line into contact with the catalyst line; and moving the catalyst line along the surface direction to be connected to the film forming chamber and The catalyst film is retracted into a retracting chamber extending along the surface direction, and then the valve between the film forming chamber and the retracting chamber is closed to supply a cleaning gas to the film forming chamber. And a step of cleaning the substrate.

In the film forming method according to claim 9, since the catalyst wire at the time of film formation is moved to the film forming chamber and the catalyst wire at the time of cleaning is moved to an isolated retreat chamber, Deterioration can be reliably suppressed. Therefore, this film forming method can greatly reduce the exchange frequency of the catalyst wire. In addition, since the present film formation method can eliminate the restrictions related to the catalyst line in the selection of cleaning conditions, the selection range of cleaning conditions can be expanded, and the cleaning time of the film forming chamber can be shortened. In addition, since the film forming method limits the moving direction of the catalyst wire to the surface direction of the substrate, it can obtain a higher accuracy in the position of the catalyst wire after the movement than in the case of moving in multiple directions. The time for adjusting the position of the line can be reduced. As a result, this film forming method can improve the productivity of the thin film by reducing various maintenance times.

  As described above, according to the present invention, it is possible to provide a film forming apparatus and a film forming method capable of reducing maintenance time and improving thin film productivity.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, an embodiment of the invention will be described with reference to the drawings. FIG. 1 is a plan view schematically showing a semiconductor device manufacturing apparatus 10 as a film forming apparatus.
(Semiconductor device manufacturing apparatus 10)
In FIG. 1, a semiconductor device manufacturing apparatus 10 is a cluster-type manufacturing apparatus. In a transfer chamber 11, two load lock chambers (hereinafter simply referred to as LL chambers 12) for accommodating a substrate S and a substrate S are provided. A plurality of catalytic CVD chambers 13 for performing a film forming process are connected to each other.

  The transfer chamber 11 is a vacuum chamber connected to an exhaust line (not shown), and a transfer robot 14 for transferring the substrate S is mounted therein. The transfer robot 14 transfers the substrate S between the LL chamber 12 and each catalytic CVD chamber 13 with the main surface Sa of the substrate S being horizontal. The main surface Sa of the substrate S is one side surface of the substrate S, which is a side surface serving as a base in the film forming process. Hereinafter, the surface direction of the main surface Sa is referred to as the surface direction of the substrate S.

  Each LL chamber 12 is connected to the transfer chamber 11 via a gate valve GV1, communicates with the transfer chamber 11 when the gate valve GV1 is opened, and is isolated from the transfer chamber 11 when the gate valve GV1 is closed. Each LL chamber 12 once accommodates the substrate S before film formation, and allows the substrate S to be carried into the transfer chamber 11. In addition, each LL chamber 12 once accommodates the substrate S after the film formation process carried out from the transfer chamber 11 and enables the substrate S to be transferred to the outside.

  Each catalytic CVD chamber 13 is a vacuum chamber that is connected to the transfer chamber 11 through a gate valve GV1 so as to communicate with the transfer chamber 11, and performs a film forming process using a catalyst wire. Each catalytic CVD chamber 13 is connected to the transfer chamber 11 via a gate valve GV1, communicates with the transfer chamber 11 when the gate valve GV1 is opened, and is isolated from the transfer chamber 11 when the gate valve GV1 is closed.

(Catalytic CVD chamber 13)
Next, the catalytic CVD chamber 13 will be described below. 2A is a side sectional view showing the catalytic CVD chamber 13, and FIG. 2B is a sectional view taken along line AA in FIG. 2A. In the following, the horizontal direction from the transfer chamber 11 to the catalytic CVD chamber is referred to as the Y direction, the upper vertical direction is referred to as the Z direction, and the direction perpendicular to the Y direction and the Z direction is referred to as the X direction.

  In FIG. 2A, a first exhaust unit 22 made of a turbo molecular pump or the like is mounted below the film formation chamber 21. The first exhaust unit 22 is disposed in a direction opposite to the Y direction (counter-Y direction) in the film formation chamber 21, and performs an exhaust operation of the film formation chamber 21 based on a predetermined drive signal. The film forming chamber 21 is depressurized at the exhaust speed. The gas inside the film forming chamber 21 receives the exhaust action of the first exhaust part 22 and flows in the anti-Y direction.

  A gas supply system 23 is connected to the outside of the film forming chamber 21 in the Y direction. The gas supply system 23 includes a film forming gas supply unit 24 including a mass flow controller and a supply valve for supplying a film forming gas, and a cleaning gas supply unit 25 including a mass flow controller and a supply valve for supplying a cleaning gas. And a remote plasma source 26 provided between the cleaning gas supply unit 25 and the film forming chamber 21.

  When the catalytic CVD chamber 13 performs a film forming process, the film forming gas supply unit 24 is driven based on a driving signal for supplying the film forming gas, and forms a film forming gas at a flow rate corresponding to the driving signal. Supply to the membrane chamber 21. When the catalytic CVD chamber 13 performs the cleaning process, the cleaning gas supply unit 25 is driven based on a driving signal for supplying the cleaning gas, and the cleaning gas is supplied to the remote plasma source at a flow rate corresponding to the driving signal. 26. The remote plasma source 26 is driven based on a drive signal for generating plasma, and the cleaning gas is turned into plasma with power corresponding to the drive signal, and the activated cleaning gas is supplied to the film forming chamber 21.

  A disk-shaped shower plate 27 that is connected to the film forming gas supply unit 24 and extends along the XZ plane is attached inside the film forming chamber 21 in the Y direction. A circular hole (hereinafter simply referred to as a cleaning port 27a) communicating with the remote plasma source 26 is formed in the central portion of the shower plate 27. The cleaning port 27a has a top that shields the anti-Y direction of the cleaning port 27a. A shield member 27b is provided.

  When the catalytic CVD chamber 13 performs the film forming process, the shower plate 27 diffuses the film forming gas from the film forming gas supply unit 24 in the XZ direction and introduces it into the film forming chamber 21. The film forming gas introduced from the shower plate 27 diffuses from the shower plate 27 to the first exhaust part 22, that is, in the anti-Y direction in accordance with the exhaust operation of the first exhaust part 22.

  When the catalytic CVD chamber 13 performs the cleaning process, the cleaning port 27 a introduces the cleaning gas from the cleaning gas supply unit 25 into the film forming chamber 21. The shielding member 27 b shields the diffusion of the cleaning gas introduced from the cleaning port 27 a in the Y direction, and diffuses the cleaning gas toward the inner wall of the film forming chamber 21.

Note that when a silicon film is formed as a film formation process, silane (SiH ₄ ) and hydrogen (H ₂ ) can be used as a film formation gas. When a silicon nitride film is formed, silane and ammonia are used. (NH ₃ ) can be used. In the case of forming a silicon oxynitride film, silane and nitrous oxide (N ₂ O) can be used as a deposition gas. In the case of removing the silicon film as the cleaning process, a mixed gas composed of, for example, nitrogen trifluoride (NF ₃ ), nitrogen (N ₂ ), and argon (Ar) can be used as the cleaning gas.

  Inside the film forming chamber 21, there are an electrostatic chuck 28 as a stage for supporting the substrate S and a rotating mechanism 29 for rotating the electrostatic chuck 28. The electrostatic chuck 28 receives the substrate S carried in from the transfer chamber 11 and electrostatically adsorbs the substrate S, and maintains the temperature of the adsorbed substrate S at room temperature.

The rotation mechanism 29 has a rotation axis A extending along the X direction, and rotates the electrostatic chuck 28 between the transport position and the processing position. The transport position is a position indicated by a two-dot chain line in FIG. 2A and is a position where the surface direction of the substrate S is parallel to the horizontal direction. The processing position is a solid line position in FIG. 2A and is a position where the surface direction of the substrate S is parallel to the vertical direction. The rotation mechanism 29 is driven based on a predetermined drive signal, and is moved to a position corresponding to the drive signal.
Rotate.

  When the catalytic CVD chamber 13 carries the substrate S, the rotation mechanism 29 rotates the electrostatic chuck 28 to the transfer position based on a drive signal for selecting the transfer position, and the surface direction and the horizontal direction of the substrate S are set. And the substrate S are attracted to the electrostatic chuck 28 in a state where they are parallel to each other. When the catalytic CVD chamber 13 unloads the substrate S, the rotation mechanism 29 receives the drive signal for selecting the transfer position and rotates the electrostatic chuck 28 to the transfer position. The adsorption of the substrate S is released in a state where the horizontal direction is parallel.

  When the catalytic CVD chamber 13 performs a film forming process, that is, when the gas supply system 23 supplies a film forming gas to the film forming chamber 21, the rotation mechanism 29 is based on a drive signal for selecting a processing position. Then, the electrostatic chuck 28 is rotated to the processing position, and the main surface Sa and the shower plate 27 are opposed to each other in a state where the surface direction of the substrate S and the vertical direction are parallel to each other. Further, when the catalytic CVD chamber 13 performs a cleaning process, that is, when the gas supply system 23 supplies a cleaning gas to the film forming chamber 21, the rotation mechanism 29 is based on a drive signal for selecting a processing position. The electrostatic chuck 28 is rotated to the processing position.

  2A and 2B, a through hole (hereinafter simply referred to as an insertion hole) that penetrates the film forming chamber 21 between the shower plate 27 and the electrostatic chuck 28 is formed on the upper side surface of the film forming chamber 21. 21a) is formed over substantially the entire width of the film forming chamber 21 in the X direction. A retraction chamber 31 that covers the insertion hole 21 a is connected to the upper side of the film formation chamber 21.

  The retreat chamber 31 is formed in a box shape extending along the Z direction, and a door 31a is attached to the side surface in the Y direction so as to be opened and closed. The door 31a of the evacuation chamber 31 seals the evacuation chamber 31 when in the closed position, and opens the inside of the evacuation chamber 31 when in the open position, thereby enabling internal maintenance of the evacuation chamber 31.

  The evacuation chamber 31 is equipped with a second exhaust part 32 made of a turbo molecular pump or the like. The second exhaust unit 32 performs an exhaust operation of the retracting chamber 31 based on a drive signal for decompressing the retracting chamber 31, and decompresses the retracting chamber 31 at an exhaust speed corresponding to the drive signal.

  When the catalytic CVD chamber 13 performs the film forming process, the second exhaust unit 32 causes the internal pressure of the retreat chamber 31 to be lower than the internal pressure of the film formation chamber 21 based on a drive signal for depressurizing the retreat chamber 31. This shortens the residence time of the film forming gas inside the evacuation chamber 31. When the catalytic CVD chamber 13 performs internal maintenance of the retreat chamber 31, the second exhaust unit 32 stops the exhaust operation based on a predetermined control signal, thereby enabling the retreat chamber 31 to be increased to atmospheric pressure.

  A gate valve GV <b> 2 is attached between the retreat chamber 31 and the film formation chamber 21. The gate valve GV2 has a valve body that opens and closes a communication path between the film forming chamber 21 and the retreat chamber 31, that is, an insertion hole 21a. The gate valve GV <b> 2 moves the valve body to the open position based on a drive signal for moving the valve body to the open position, and makes the escape chamber 31 and the film forming chamber 21 communicate with each other. Further, the gate valve GV <b> 2 moves the valve body to the closed position based on the drive signal for moving the valve body to the closed position, and isolates the retreat chamber 31 from the film forming chamber 21.

A holder 33 extending in the X direction is accommodated in the retreat chamber 31 so as to be able to reciprocate along the Z direction, and a plurality of catalyst wires 35 extending in the anti-Z direction are disposed below the holder 33 in the X direction of the holder 33. It is arranged over substantially the entire width of the direction. Each catalyst wire 35 is a wire made of tungsten or the like, and is bent in a U shape when viewed from the Y direction. Each catalyst wire 35 is suspended from the holder 33 via the insertion hole 21a, and can move between the film forming chamber 21 and the retreat chamber 31. Each catalyst line 35 is driven based on a drive signal for raising the temperature to the film forming temperature, and generates a heat amount corresponding to the drive signal, thereby exhibiting a catalytic action.

  The holder 33 is connected to an elevating mechanism 34 as a holder driving unit. The elevating mechanism 34 is driven in response to a predetermined drive signal, and moves the holder 33 up and down to a position corresponding to the drive signal, that is, moves each catalyst wire 35 to a film forming position or a retracted position. The film formation position is a solid line position (lowermost position) in FIG. 2A and is a position where the holder 33 and the upper side surface of the film formation chamber 21 come into contact with each other. The retreat position is a position indicated by a two-dot chain line (uppermost position) in FIG. 2A and is a position where each catalyst line 35 is disposed above the gate valve GV2.

  When the catalytic CVD chamber 13 performs the film forming process, the elevating mechanism 34 receives the drive signal for selecting the film forming position, moves each catalyst line 35 to the film forming position, and the substrate S and the shower plate 27. The catalyst wires 35 are arranged between the two. When the catalytic CVD chamber 13 performs the cleaning process or performs internal maintenance of the retreat chamber 31, the elevating mechanism 34 receives the drive signal for selecting the retreat position and moves each catalyst line 35 to the retreat position. The catalyst wires 35 are retreated into the retreat chamber 31 separated from the film formation chamber 21.

  Next, the electrical configuration of the catalytic CVD chamber 13 will be described below. 3 and 4 are block circuit diagrams showing the electrical configuration of the catalytic CVD chamber 13, respectively. 3 and 4, the alternate long and short dash line connecting each component is an electrical connection, and indicates a connection for the controller 40 to output various drive signals, and a broken line connecting each component is This is an electrical connection and indicates a connection in which the control unit 40 does not output a drive signal.

  3 and 4, the control unit 40 causes the catalytic CVD chamber 13 to perform film formation processing, cleaning processing, and internal maintenance of the evacuation chamber 31. The control unit 40 includes a calculation unit 40A including a CPU for executing various calculation processes, and a storage unit 40B for storing various data and various control programs. The control unit 40 reads the film formation program, the cleaning program, the maintenance program, and various data stored in the storage unit, and executes various processes according to the film formation program, the cleaning program, and the maintenance program, respectively.

  The control unit 40 generates a drive signal corresponding to the first exhaust unit 22 according to various programs, and outputs the drive signal to the first exhaust unit 22. The first exhaust unit 22 is driven in response to a drive signal from the control unit 40 and depressurizes the film forming chamber 21 at an exhaust rate corresponding to the drive signal.

  The control unit 40 generates drive signals corresponding to the film formation gas supply unit 24, the cleaning gas supply unit 25, and the remote plasma source 26 according to various programs, and the drive signals are respectively generated in the film formation gas supply unit 24 and the cleaning gas. Output to the gas supply unit 25 and the remote plasma source 26. The film forming gas supply unit 24 is driven in response to a drive signal from the control unit 40 and supplies the film forming gas at a flow rate corresponding to the drive signal. The cleaning gas supply unit 25 is driven in response to a drive signal from the control unit 40, and supplies the cleaning gas at a flow rate corresponding to the drive signal. The remote plasma source 26 is driven in response to a drive signal from the control unit 40 and converts the cleaning gas into plasma with electric power corresponding to the drive signal.

  The control unit 40 generates a drive signal corresponding to the rotation mechanism 29 according to various programs, and outputs the drive signal to the rotation mechanism 29. The rotation mechanism 29 is driven in response to a drive signal from the control unit 40, and moves the electrostatic chuck 28 to a transport position or a processing position selected by the drive signal.

  The control unit 40 generates a drive signal corresponding to the second exhaust unit 32 according to various programs, and outputs the drive signal to the second exhaust unit 32. The second exhaust unit 32 is driven in response to a drive signal from the control unit 40, and depressurizes the retreat chamber 31 at an exhaust speed corresponding to the drive signal. The control unit 40 generates a drive signal corresponding to the gate valve GV2 according to various programs, and outputs the drive signal to the gate valve GV2. The gate valve GV2 is driven in response to a drive signal from the control unit 40, and moves the valve body to an open position or a closed position selected by the drive signal.

  The control unit 40 generates a drive signal corresponding to the lifting mechanism 34 according to various programs, and outputs the driving signal to the lifting mechanism 34. The elevating mechanism 34 is driven in response to a drive signal from the control unit 40, and moves each catalyst wire 35 to a film forming position or a retracted position selected by the drive signal. The control unit 40 generates a drive signal corresponding to each catalyst line 35 according to various programs, and outputs the drive signal to each catalyst line 35. Each catalyst line 35 is driven in response to a drive signal from the control unit 40, and the temperature is raised to a predetermined temperature with electric power corresponding to the drive signal.

Next, a film forming method for forming a thin film using the catalytic CVD chamber 13 will be described below.
In FIG. 3, the control unit 40 drives the first exhaust unit 22 and the second exhaust unit 32 to depressurize the film forming chamber 21 and the retreat chamber 31 to a predetermined pressure. Next, the control unit 40 places the electrostatic chuck 28 and the catalyst wire 35 at the initial positions, that is, the transfer position and the retracted position, and closes the gate valve GV2.

  When the electrostatic chuck 28 and the catalyst wire 35 are placed at the initial positions, the controller 40 attracts the substrate S to the electrostatic chuck 28, and then drives the rotation mechanism 29 to rotate the electrostatic chuck 28 to the processing position. Move. Further, the control unit 40 supplies electric power to each catalyst wire 35 to set each catalyst wire 35 to a predetermined temperature.

  When each catalyst line 35 is set to a predetermined temperature, the control unit 40 opens the gate valve GV2, and then drives the elevating mechanism 34 to move each catalyst line 35 to the film forming position. When the control unit 40 arranges each catalyst wire 35 at the film formation position, the control unit 40 drives the film formation gas supply unit 24 to introduce the film formation gas into the film formation chamber 21. The film forming gas introduced into the film forming chamber 21 contacts the heated catalyst wire 35 while diffusing from the shower plate 27 toward the main surface Sa, and receives the catalytic action of the catalyst wire 35 to form a film forming species. Disassembled. A part of the film forming species generated by the catalyst wire 35 is deposited on the main surface Sa of the substrate S kept at room temperature to form a thin film. Further, a part of the film formation species generated by the catalyst wire 35 is deposited on the inner surface of the film formation chamber 21, particularly in the vicinity of the catalyst wire 35 (hereinafter simply referred to as a residue region DA) to form a film formation residue RD. Form.

  At this time, since the catalyst wire 35 at the film formation position is disposed between the shower plate 27 and the first exhaust part 22, the film formation gas from the shower plate 27 has a contact probability with the catalyst wire 35, that is, the film formation. The reaction efficiency to seeds can be improved. Further, the film forming gas introduced into the film forming chamber 21 flows into the retracting chamber 31 through the insertion hole 21 a in accordance with the differential pressure between the film forming chamber 21 and the retracting chamber 31. A part of the catalyst wire 35 in the evacuation chamber 31 significantly reduces the temperature at the joint portion with the holder 33. When the low temperature portion of the catalyst wire 35 is exposed to the film forming gas for a long time, it corrodes due to the reaction with the film forming gas. The pressure in the retreat chamber 31 is set lower than the pressure in the film formation chamber 21 in order to sufficiently reduce the contact probability between the low temperature portion of the catalyst wire 35 and the film formation gas. As a result, since the reaction with the film forming gas can be avoided at the low temperature portion of the catalyst wire 35, the deterioration thereof can be suppressed.

When the thin film is formed on the substrate S, the control unit 40 stops the film formation gas supply to the film formation gas supply unit 24 and drives the rotation mechanism 29 to rotate the electrostatic chuck 28 to the transport position. Then, the control unit 40 causes the electrostatic chuck 28 to release the adsorption of the substrate S, causes the substrate S on the electrostatic chuck 28 to be carried out to the transport robot 14, and ends the film forming process. Thereafter, similarly, the control unit 40 repeatedly executes the film forming process on the plurality of substrates S.

  In FIG. 4, the control unit 40 starts the cleaning process of the film forming chamber 21 when the number of processed substrates S reaches a predetermined number. That is, the control unit 40 drives the rotation mechanism 29 to rotate the electrostatic chuck 28 to the processing position again. Next, the control unit 40 drives the lifting mechanism 34 to move each catalyst wire 35 to the retracted position. The controller 40 closes the gate valve GV2 and stops the power supply to each catalyst line 35 when each catalyst line 35 is disposed at the retracted position.

  When the control unit 40 retracts each catalyst line 35 to the retreat chamber 31 that is isolated, the control unit 40 drives the cleaning gas supply unit 25 and the remote plasma source 26 to introduce the activated cleaning gas into the film formation chamber 21. The cleaning gas introduced into the film forming chamber 21 passes through the cleaning port 27a, the flow in the anti-Y direction is shielded by the shielding member 27b, and the inner surface of the film forming chamber 21 is shown by the solid line arrow in FIG. Spread towards The activated cleaning gas reacts with the residue deposited on the inner surface of the film forming chamber 21, generates a reaction product that can be evaporated, and exhausts the film forming species deposited on the inner surface.

  At this time, since the evacuation chamber 31 is isolated from the film forming chamber 21, each catalyst wire 35 can reliably avoid contact with the activated cleaning gas, and its deterioration can be sufficiently suppressed. Therefore, the catalytic CVD chamber 13 can greatly reduce the replacement frequency of the catalyst wires 35 by the amount that can suppress the deterioration of each catalyst wire 35.

  Further, since each catalyst line 35 is in the isolated retreat chamber 31, the selection range of the cleaning condition is not subject to any restrictions related to the corrosion of the catalyst line 35. Therefore, in the cleaning process, the cleaning speed can be sufficiently accelerated by increasing the pressure during cleaning or increasing the flow rate of the cleaning gas. Further, since the cleaning gas shielded by the shielding member 27b diffuses toward the residue region DA, the film deposition residue RD deposited in the residue region DA is efficiently exhausted. Therefore, since the catalytic CVD chamber 13 can improve the cleaning efficiency in the film forming chamber 21, the maintenance time for cleaning can be shortened.

  When a predetermined time has elapsed from the start of cleaning, the control unit 40 stops power supply to the remote plasma source 26 and causes the cleaning gas supply unit 25 to stop supplying cleaning gas. Thereby, the control unit 40 ends the cleaning process of the film forming chamber 21.

  When the control unit 40 finishes the cleaning process and starts the film forming process again, the controller 40 drives the rotation mechanism 29 to rotate the electrostatic chuck 28 to the transfer position, thereby attracting the substrate S to the electrostatic chuck 28. . Next, the control unit 40 drives the rotation mechanism 29 to rotate the electrostatic chuck 28 to the processing position, supplies power to each catalyst wire 35, and sets each catalyst wire 35 to a predetermined temperature. Then, when each catalyst wire 35 is set to a predetermined temperature, the control unit 40 opens the gate valve GV2, and then drives the lifting mechanism 34 to move each catalyst wire 35 to the film forming position again.

  At this time, since the movement direction of each catalyst wire 35 is limited to the vertical direction, each catalyst wire 35 is moved in multiple directions, for example, when it undergoes a combination of movement in the vertical direction and movement in the horizontal direction. In comparison, a high accuracy can be obtained at the position of the catalyst wire 35. Therefore, the catalytic CVD chamber 13 can reduce the maintenance time related to the catalyst wire 35 to the extent that the position adjustment before and after the movement of the catalyst wire 35 can be omitted.

  When the number of processed substrates S reaches a predetermined number and the catalyst wires 35 are replaced, the control unit 40 drives the rotating mechanism 29 to rotate the electrostatic chuck 28 to the processing position again. Next, the control unit 40 drives the lifting mechanism 34 to move each catalyst wire 35 to the retracted position. The controller 40 closes the gate valve GV2 and stops the power supply to each catalyst line 35 when each catalyst line 35 is disposed at the retracted position.

  When the control unit 40 retreats each catalyst line 35 to the retreat chamber 31 that is isolated, the control unit 40 stops the exhaust operation of the second exhaust unit 32 and supplies the vent gas such as nitrogen to the retreat chamber 31, thereby reducing the retreat chamber 31. Increase the pressure to atmospheric pressure. And the control part 40 opens the inside of the retracting chamber 31 by moving the door 31a of the retracting chamber 31 from the closed position to the open position, and performs internal maintenance of the retracting chamber 31, that is, replacement work of each catalyst wire 35. enable.

  At this time, since the evacuation chamber 31 is isolated from the film forming chamber 21, the internal environment of the film forming chamber 21 continues to maintain the state after the film forming process. Therefore, the catalytic CVD chamber 13 can reduce the maintenance time associated with the work for returning the film forming environment to the extent that the film forming environment can be maintained.

According to the above embodiment, the following effects can be obtained.
(1) In the above-described embodiment, the catalytic CVD chamber 13 is equipped with the retreat chamber 31 extending along the surface direction of the substrate S at the film formation position, and the catalyst 33 is moved up and down to move each of the catalysts. The lines 35 are selectively disposed in the film forming chamber 21 and the retreat chamber 31, respectively. When supplying the film forming gas to the film forming chamber 21, each catalyst line 35 is moved to the film forming chamber 21. When supplying the cleaning gas to the film forming chamber 21, each catalyst line 35 is connected to the film forming chamber 21. Each is moved to the retreat chamber 31, and the gate valve GV2 is closed.

  Accordingly, since the catalyst wire 35 at the time of film formation is moved to the film formation chamber 21 and the catalyst wire 35 at the time of cleaning is moved to the isolated retreat chamber 31, the deterioration of the catalyst wire 35 accompanying the cleaning is ensured. It can be suppressed. Therefore, the replacement frequency of the catalyst wire 35 can be greatly reduced. In addition, since the restriction on the catalyst line 35 can be excluded in the selection of the cleaning condition, the selection range of the cleaning condition can be expanded, and the cleaning time of the film forming chamber 21 can be shortened. Furthermore, since the moving direction of the catalyst wire 35 is limited to the surface direction of the substrate S at the film forming position, higher accuracy can be obtained at the position of the catalyst wire 35 after the movement than in the case of moving in multiple directions. The time for adjusting the position of the catalyst wire 35 can be reduced.

As a result, the catalytic CVD chamber 13 can improve thin film productivity by reducing various maintenance times.
(2) In the above-described embodiment, since the retreat chamber 31 has a shape extending along the vertical direction, the apparatus S occupied area (footprint) is increased as the substrate S is enlarged, that is, the catalyst wire 35 is enlarged. It can be suppressed. Moreover, since the film-forming residue that peels off from the film-forming chamber 21 scatters in the vertical direction, it is possible to reduce the adsorption probability of the film-forming residue on the main surface of the substrate S, thereby reducing the number of particles. Therefore, the catalytic CVD chamber 13 can further improve the productivity of the thin film, and can greatly reduce the restrictions on the device design accompanying the increase in the size of the substrate S, so that its application range can be further expanded.

  (3) In the above embodiment, the movement timing of each catalyst line 35 and the opening / closing timing of the gate valve GV2 are controlled by the control unit 40 according to the deposition gas supply timing and the cleaning gas supply timing. Therefore, since the catalytic CVD chamber 13 can reliably suppress the deterioration of the catalyst wire 35, the productivity of the thin film can be reliably improved.

(4) In the above embodiment, the evacuation chamber 31 includes the door 31a that opens the interior of the evacuation chamber 31 and enables the catalyst wire 35 to be taken out. Therefore, since the catalyst wire 35 can be taken out from the isolated retreat chamber 31, the film forming environment of the film forming chamber 21 can be maintained when the catalyst wire 35 is replaced. Therefore, the catalytic CVD chamber 13 can extend the life of the catalyst wire 35 and can reduce the maintenance time associated with the return operation of the film forming environment, thereby further improving the productivity of the thin film.

  (5) In the above embodiment, the catalytic CVD chamber 13 arranges the respective catalyst wires 35 in the normal direction of the substrate S, so that the substrate S can be enlarged only by changing the size and quantity of the catalyst wires 35. it can. Therefore, since the catalytic CVD chamber 13 can improve the productivity of the thin film and can greatly reduce the restrictions on the device design accompanying the increase in the size of the substrate S, the application range can be further expanded.

  (6) In the above embodiment, the film forming gas supplied from the shower plate 27 reaches the substrate S via the catalyst wire 35. Therefore, the film forming gas can be used under the catalytic CVD chamber 13 and higher reaction efficiency. As a result, the catalytic CVD chamber 13 can improve the productivity of the thin film and can reduce the restrictions on the apparatus design accompanying the film forming process, so that the application range can be further expanded.

  (7) In the above embodiment, the substrate S accommodated in the film forming chamber 21 is disposed between the shower plate 27 and the first exhaust part 22. Therefore, the catalytic CVD chamber 13 exhausts the film forming gas supplied from the front of the substrate S toward the rear of the substrate S, so that the adsorption efficiency of the film forming species on the substrate S can be improved. Therefore, the catalytic CVD chamber 13 can further improve the productivity of the thin film.

  (8) In the above embodiment, the cleaning gas introduced from the cleaning port 27a is shielded from diffusion in the anti-Y direction by the shielding member 27b and diffuses toward the residue region DA. Therefore, since the catalytic CVD chamber 13 diffuses the cleaning gas toward the region where the film formation amount is large, the film formation residue RD in the film formation chamber 21 can be efficiently removed. Therefore, since the catalytic CVD chamber 13 can extend the life of the catalyst wire and improve the cleaning efficiency, the productivity of the thin film can be further improved.

In addition, you may implement the said embodiment in the following aspects.
In the above embodiment, the stage is embodied in the electrostatic chuck 28, but the present invention is not limited to this, and the stage may be embodied in a clamp-type stage. In other words, the stage in the present invention may be any stage that can fix the substrate S and arrange the surface direction of the substrate S in the vertical direction.

  In the above embodiment, when performing the cleaning process, the electrostatic chuck 28 is located at the processing position. For example, as illustrated in FIG. 5, the electrostatic chuck 28 may be positioned at the transport position when performing the cleaning process.

  In the above embodiment, when performing the cleaning process, the cleaning gas from the cleaning gas supply unit 25 is converted into plasma by the remote plasma source 26. For example, when the high frequency power supply 41 is connected to the conductive shower plate 27 and the cleaning process is executed, the cleaning gas from the cleaning gas supply unit 25 is converted into plasma by the high frequency power from the high frequency power supply 41. It may be a configuration.

  In the above embodiment, when the film forming process is executed, the internal pressure of the evacuation chamber 31 is lower than the internal pressure of the film forming chamber 21. However, the present invention is not limited thereto, and a configuration in which the internal pressure of the retreat chamber 31 is higher than the internal pressure of the film formation chamber 21 when performing the film formation process.

In the above embodiment, the control unit 40 may be configured to continue supplying power to the catalyst wire 35 during the cleaning process. According to this configuration, since the frequency of thermal contraction applied to the catalyst wire 35 can be reduced, mechanical damage to the catalyst wire 35 can be reduced.

  In the above embodiment, the catalytic CVD chamber 13 may be configured to introduce an inert gas into the retreat chamber 31 during the film forming process. According to this configuration, since the film forming gas staying in the retreat chamber 31 is effectively exhausted by the purge effect of the inert gas, chemical deterioration of the catalyst wire 35 can be further suppressed.

  In the above embodiment, the film forming apparatus is embodied in the semiconductor device manufacturing apparatus 10, but is not limited thereto, and is embodied in a display apparatus manufacturing apparatus such as a liquid crystal display or a plasma display, or a photoelectric conversion apparatus manufacturing apparatus. May be.

The top view which shows typically the manufacturing apparatus of a semiconductor device. (A), (b) is a side sectional view and a front sectional view showing a catalytic CVD chamber, respectively. The block circuit diagram which shows the electric constitution of a catalytic CVD chamber. The block circuit diagram which shows the electric constitution of a catalytic CVD chamber. The block circuit diagram which shows the electric constitution of the catalytic CVD chamber in the example of a change.

Explanation of symbols

  DESCRIPTION OF SYMBOLS S ... Substrate, 10 ... Semiconductor device manufacturing apparatus as film forming apparatus, 21 ... Film forming chamber, 23 ... Gas supply unit, 27 ... Shower plate, 28 ... Stage, 31 ... Retreat chamber, 33 ... Holder, 35 ... Catalyst Line, 40 ... control unit.

Claims (9)

A film forming apparatus for forming a thin film on a substrate housed in a film forming chamber,
A gas supply unit that selectively supplies a film forming gas and a cleaning gas to the film forming chamber;
A retracting chamber connected to the film forming chamber and extending along one surface direction of the substrate;
A holder accommodated in the retreat chamber and movable along the surface direction;
A catalyst wire attached to the holder and extending along the surface direction;
A holder driving unit that selectively arranges the catalyst wire in the film forming chamber and the retreat chamber by reciprocating the holder along the surface direction;
A valve that opens and closes a communication path between the evacuation chamber and the film formation chamber;
When the gas supply unit supplies the film forming gas, the holder driving unit moves the catalyst wire to the film forming chamber,
When the gas supply unit supplies the cleaning gas, the holder driving unit moves the catalyst wire to the retracting chamber, and the valve closes the communication path. The film forming apparatus according to claim 1,
When the gas supply unit is driven to supply the film forming gas, the valve is driven to open the communication path, and then the holder driving unit is driven to connect the catalyst wire in the retracting chamber to the catalyst line. When moving to the film forming chamber and driving the gas supply unit to supply the cleaning gas, the holder driving unit is driven to move the catalyst wire in the film forming chamber to the retracting chamber. A film forming apparatus comprising a control unit that later drives the valve to close the communication path. The film forming apparatus according to claim 1 or 2,
The film forming apparatus, wherein the retreat chamber has a door that opens the interior of the retreat chamber and enables the catalyst wire to be taken out. It is the film-forming apparatus as described in any one of Claims 1-3,
Having a stage for supporting the substrate in an upright state;
The film forming apparatus, wherein the surface direction is a vertical direction. The film forming apparatus according to claim 4,
The holder suspends a plurality of the catalyst wires vertically downward,
When the gas supply unit supplies the film forming gas, the holder driving unit moves the catalyst lines downward in the vertical direction, thereby arranging the catalyst lines in the normal direction of the substrate. When the gas supply unit supplies the cleaning gas, the catalyst lines are arranged in the retreat chamber by moving the catalyst lines upward in the vertical direction. The film forming apparatus according to claim 5,
The gas supply unit has a shower plate that faces the substrate and blows the film forming gas toward the substrate,
The retracting chamber is disposed vertically above the substrate and the shower plate,
The holder driving unit, when the gas supply unit supplies the film forming gas, arranges the catalyst wire between the substrate and the shower plate. The film forming apparatus according to claim 6,
The film formation chamber is characterized in that the substrate is accommodated between the shower plate and an exhaust port. A film forming apparatus according to any one of claims 1 to 7,
The gas supply unit is an inner wall of the film formation chamber, and diffuses the cleaning gas toward the vicinity of the catalyst wire during film formation. A film forming method for forming a thin film on a substrate housed in a film forming chamber,
A step of depositing the thin film on the substrate by disposing a catalyst line along one surface direction of the substrate and bringing a film forming gas supplied to the film forming chamber into contact with the catalyst line;
The catalyst wire is moved along the surface direction, and the catalyst wire is retracted into a retreat chamber connected to the film formation chamber and extending along the surface direction. And a step of cleaning the film formation chamber by closing a valve between them and supplying a cleaning gas to the film formation chamber,
A film forming method characterized by the above.

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