JP2009099688A - Exposure apparatus and method of manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent liquid from penetrating into a gap of two substrate stages, when the liquid is moved from one substrate stage to the other substrate stage, while approaching the two substrate stages. <P>SOLUTION: An immersion exposure apparatus includes: first and second substrate stages WST1, WST2 which hold wafers and move; and a control section 12 which controls a pressure of liquid IML when moving the liquid IML from a spacing between one stage of the first and second substrate stages WST1, WST2 and a last side of a projection optical system 13 to a spacing between the other stage and the last side of the projection optical system 13. The control section 12 expands the spacing between the first and second substrate stages WST1, WST2 and the last side of the projection optical system 13 in a liquid movement rather than in exposing the wafer. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an exposure apparatus that exposes a substrate with a liquid interposed between a projection optical system and the substrate, and a device manufacturing method that uses the exposure apparatus to manufacture a device.

  2. Description of the Related Art In the manufacture of semiconductor devices composed of ultrafine patterns such as LSIs, a reduction type projection exposure apparatus is used that projects a pattern formed on an original plate on a substrate coated with a photosensitive agent by reduction projection. As the integration density of semiconductor devices has improved, further miniaturization of patterns has been demanded, and the resolution of exposure apparatuses has been enhanced with the development of resist processes.

  As an approach for improving the resolving power of the exposure apparatus, a method of shortening the wavelength of exposure light and a method of increasing the numerical aperture (NA) of the projection optical system are generally used. With respect to exposure light, the i-line at 365 nm is shifting to KrF excimer laser light having an oscillation wavelength near 248 nm, and further development of an ArF excimer laser having an oscillation wavelength near 193 nm is in progress. Further, a fluorine (F2) excimer laser having an oscillation wavelength near 157 nm has been developed.

  On the other hand, an immersion exposure method has attracted attention as a resolution enhancement technique that is completely different from these (Patent Document 1). In the immersion exposure method, a substrate is exposed with a liquid interposed between the projection optical system and the substrate. Conventionally, the space between the final surface of the projection optical system and the substrate is filled with gas, but in the immersion exposure method, this space is filled with liquid. The advantage of the immersion exposure method is that a higher resolving power can be obtained even when a light source having the same wavelength as the conventional one is used. For example, the liquid provided in the space between the projection optical system and the substrate is pure water (refractive index 1.33). Further, it is assumed that the maximum incident angle of the light beam that forms an image on the substrate is equal between the immersion exposure method and the conventional method. In this case, the resolution of the immersion exposure method is 1.33 times that of the conventional method. This is equivalent to increasing the NA of the projection optical system of the conventional method by 1.33 times. According to the immersion exposure method, it is possible to obtain a resolution of NA = 1 or higher, which is impossible with the conventional method. is there.

  On the substrate stage, a flat plate (hereinafter referred to as the same plate) disposed at substantially the same height as the substrate is configured to hold the liquid immersion area.

  Patent Document 2 discloses an immersion exposure apparatus including two stages. In the immersion exposure apparatus described in Patent Document 2, when the liquid is moved from the upper surface of one stage to the upper surface of the other stage, the upper surface of the one stage is made higher than the upper surface of the other stage.

Patent Document 3 also discloses an immersion exposure apparatus including two stages. In the immersion exposure apparatus described in Patent Document 3, it is disclosed that the liquid is moved to another stage of one stage while maintaining the distance between the two stages at a constant distance.
JP 2005-19864 A JP 2006-135165 A JP 2006-332656 A

  The immersion exposure apparatus includes a liquid supply / recovery unit that supplies liquid to a space between the final surface of the projection optical system and the substrate stage and recovers the liquid from the space. When the liquid is circulated by the liquid supply / recovery unit, the pressure of the liquid varies. When the pressure of the liquid fluctuates, the pressure applied to the gap portion between the two stages fluctuates when the liquid is moved from the top of one stage onto the other stage. Due to the pressure fluctuation, the liquid easily enters the gap portion. Narrowing the gap between the two stages increases the tolerance for liquid pressure fluctuations, but increases the likelihood that the two stages will collide with each other.

  Further, when the stage moves, the liquid pressure between the final surface of the projection optical system and the stage increases. As the liquid pressure increases, the pressure applied to the gap between the two stages increases when moving the liquid from above one stage to the other. The increase in pressure increases the likelihood that liquid will enter the gap, as before. Narrowing the gap between the two stages increases the tolerance for liquid pressure fluctuations, but increases the likelihood that the two stages will collide with each other.

  As the liquid pressure increases, the area occupied by the liquid on the stage increases. Therefore, the possibility of increasing the liquid pressure requires an increase in the size of the stage, which can lead to an increase in the weight of the exposure apparatus, an increase in size, and an increase in power consumption.

  The present invention has been made in response to the above problem recognition. For example, when liquid is moved from one substrate stage to the other substrate stage with the two substrate stages approaching, the two substrate stages can be moved. The object is to prevent liquid from entering the gap.

  A first aspect of the present invention relates to an exposure apparatus that exposes a substrate by interposing a liquid between a projection optical system and the substrate, and the exposure apparatus holds first and second substrates that move while holding the substrate. Between the stage and one of the first and second substrate stages and the final surface of the projection optical system, the other substrate stage of the first and second substrate stages and the final of the projection optical system A controller that controls the pressure of the liquid during the movement of the liquid that moves the liquid to and from the surface. The controller widens the distance between the first and second substrate stages and the final surface of the projection optical system when moving the liquid than when exposing the substrate.

  According to a second aspect of the present invention, there is provided an exposure apparatus that exposes a substrate by interposing a liquid between a projection optical system and the substrate, wherein the exposure apparatus holds the substrate and moves the first and second substrates. A stage, a liquid supply / recovery unit that supplies liquid to the space below the final surface of the projection optical system and collects the liquid from the space, one of the first and second substrate stages, and the projection Supply operation and recovery by the liquid supply / recovery unit when moving liquid between the last surface of the optical system and the other substrate stage of the first and second substrate stages and the final surface of the projection optical system And a control unit for stopping the operation.

  According to the present invention, for example, when liquid is moved from one substrate stage to the other substrate stage with the two substrate stages approaching, the liquid is prevented from entering the gap between the two substrate stages. Can do.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

  FIG. 1 is a view showing the schematic arrangement of an exposure apparatus according to the first embodiment of the present invention. The exposure apparatus 100 shown in FIG. 1 includes two wafer stages (first and second substrate stages) WST1 and WST2. The exposure apparatus 100 is configured as an immersion exposure apparatus that exposes the wafer with a liquid interposed between the projection optical system 13 and the wafer (substrate).

  The exposure apparatus 100 includes an exposure station ES and a measurement station MS. In the exposure station ES, the reticle (original) R is illuminated by the illumination optical system IL, and the pattern of the reticle R is projected onto the wafers (substrates) W1 and W2 via the projection optical system 13 and the liquid IML. Exposed. In the measurement station MS, the wafers W1 and W2 are measured by the alignment sensor 16 and the detection system 18. In this specification, when it is not necessary to distinguish between the two wafer stages WST1 and WST2, both of them are denoted as wafer stage WST. Similarly, when there is no need to express the two wafers W1 and W2 separately, both of them are denoted as a wafer W.

The illumination optical system IL can include, for example, a light source 1, a shaping optical system 2, a fly-eye lens 3, a condenser lens 4, a field stop 5, a movable blind 7, a relay lens system 8, and the like. As the light source 1, for example, an excimer laser such as an F ₂ excimer laser, an ArF excimer laser, or a KrF excimer laser can be used. As the light source 1, a metal vapor laser, a YAG laser, a mercury lamp, or the like may be used.

  The illumination light emitted from the light source 1 reaches the fly-eye lens 3 with the beam diameter set to a predetermined size by the shaping optical system 2. A large number of secondary light sources are formed on the exit surface of the fly-eye lens 3, and the illumination light emitted from the secondary light sources is collected by a condenser lens 4 and passes through a fixed field stop 5 to move a movable blind (variable field of view). Aperture) 7 is reached. In FIG. 1, the field stop 5 is disposed closer to the condenser lens 4 than the movable blind 7, but the field stop 5 may be disposed closer to the relay lens system 8.

  The field stop 5 is formed with a band-shaped (for example, rectangular or arc) opening, and the light beam that has passed through the opening becomes a light beam shaped into a band and enters the relay lens system 8. In this embodiment, the longitudinal direction of the strip-shaped light flux is the Y direction.

  The relay lens system 8 is a lens system that conjugates the movable blind 7 and the pattern forming surface of the reticle R. The movable blind 7 has two blades (light-shielding plates) 7A and 7B that define the width in the scanning direction (X direction) of the wafer stage, and 2 that defines the width in the non-scanning direction (Y direction) perpendicular to the scanning direction. Including blades (not shown). The blades 7A and 7B that define the width in the scanning direction are independently driven in the scanning direction by the driving units 6A and 6B, respectively. Two wings that define a width in the non-scanning direction (not shown) are also independently driven by a driving unit (not shown).

  In this embodiment, only the area limited by the movable blind 7 in the illumination area 21 on the reticle R defined by the fixed field stop 5 is illuminated with illumination light.

  The relay lens system 8 is a bilateral telecentric optical system, and the telecentricity is maintained in the slit-shaped illumination region 21 on the reticle R. Reticle R is held on reticle stage RST. The position of reticle stage RST is detected by interferometer 22 controlled by interferometer controller 20, and is driven by reticle stage driver 10 based on the detection result. A reference plate SP on which a reference mark is formed is arranged on the reticle stage RST. A reference mark for calibration is arranged on the reference plate SP. A TTL detection system (not shown) is arranged between the relay lens system 8 and the reticle R, whereby the relative position between the reference mark on the reference plate SP or the mark on the reticle R and the wafer W or the reference mark FM. Is measured.

  The image of the pattern of the reticle R illuminated with the illumination light having the band-like cross-sectional shape is projected onto the wafer W by the light diffracted by the pattern via the projection optical system 13 and the liquid below the final surface.

  Here, reticle R and wafer W are scanned in opposite directions within a plane perpendicular to the optical axis of projection optical system 13. In this specification, for convenience of explanation, the scanning direction is defined as a direction parallel to the X axis, and the optical axis of the projection optical system 13 is defined as a direction parallel to the Z axis.

  Wafer W is transferred onto wafer chuck WC mounted on Z stage ZST of wafer stage WST by a wafer transfer mechanism (not shown), and is chucked by wafer chuck WC. Wafer stage WST is driven to position wafer W in a plane perpendicular to the optical axis of projection optical system 13 and to scan wafer W in the ± X directions. Wafer stage WST includes a Z stage ZST that supports wafer chuck WC, and a drive mechanism ZDRV for positioning Z stage ZST in the optical axis direction (Z direction). By positioning the Z stage ZST, the wafer W and the same-surface plate P described later are also positioned.

  Wafer stage WST is guided (supported) by stage guide STG. The position of wafer stage WST is detected by interferometer 23 controlled by interferometer controller 20. The position of wafer stage WST can typically be detected in the rotational directions around X, Y and X axes, and the rotational direction around Y axes. Wafer stage WST is provided with a reference mark FM used for calibration of the exposure apparatus and alignment of wafer W. Although not shown in FIG. 1, various measuring instruments for measuring imaging performance, illuminance, and the like can be arranged on wafer stage WST. Wafer stage WST is provided with a coplanar plate P formed at the same height as the surface of wafer W around wafer W. Wafer stage WST can further include a drainage portion DR around wafer W. The drainage part DR can be connected to a drainage line (not shown). A drainage part DRFM can also be provided around the reference mark FM. This drainage part DRFM can also be connected to a drainage line (not shown).

  The exposure apparatus 100 includes a liquid supply / recovery unit LSR that supplies the liquid IML to a space below the final surface of the projection optical system 13 (the surface that faces the wafer W during exposure) and recovers the liquid IML from the space. . Although not shown, the liquid supply / recovery unit LSR is, for example, a supply unit including a liquid supply line, a pump, a temperature control unit, a filter, etc., and a liquid recovery line, a pump, a gas-liquid separator, etc. And a configured recovery unit. The liquid supply / recovery unit LSR is controlled by the main control unit 12 via the liquid control unit 24.

  An off-axis type alignment sensor 16 is arranged in the measurement station MS. The position of the alignment mark formed on the wafer W is detected by the alignment sensor 16. The alignment sensor 16 is controlled by the alignment sensor control unit 17, and the detection result by the alignment sensor 16 is sent to the main control unit 12.

  In the measurement station MS, a detector 18 for measuring the height and inclination of the wafer W is arranged. The detector 18 can be, for example, a grazing incidence detector. The height and inclination of the surface of the wafer W are detected by the detector 18, and the detection result is sent to the main control unit 12 by the control unit 19 that controls the detector 18.

  The main control unit 12 controls the positioning operation and scanning of the wafer stage WST by sending commands to the wafer stage driving units 14 and 15, for example. For the exposure process at the exposure station WS, the main control unit 12 sends a command to the wafer stage drive unit 14 based on the detection results by the alignment sensor 16 and the detection system 18, thereby positioning and scanning the wafer stage WST. To control.

  The space in which wafer stage WST is placed is controlled in temperature and humidity by an air conditioner (not shown).

  The speed of the reticle R during scanning exposure is VR, and the projection magnification of the projection optical system 13 is β. In this case, assuming that the speed of the wafer W scanned in synchronization with the reticle R scan is VW, VW = −β · VR.

  2 and 3 are schematic diagrams for explaining a liquid movement process for moving the liquid IML from one of the two wafer stages WST1 and WST2 to the other. 2 and 3, the projection optical system 13 and the alignment sensor 16 are indicated by a one-dot chain line. FIG. 2 shows a state where wafer W1 held by wafer stage WST1 is exposed. The liquid ILML includes a liquid supply / recovery unit LSR between the final surface of the projection optical system 13 and the wafer stage WST1 so that an area in which the liquid ILML exists (which can be referred to as an immersion area) covers the exposure area EXP. Maintained by.

  In parallel with the exposure operation, measurement of wafer W2 held by wafer stage WST2 is performed at measurement station MS. When the exposure of all shot regions of wafer W1 held by wafer stage WST1 is completed, wafer stage WST2 moves to exposure station ES as shown in FIG. Wafer stages WST1 and WST2 are driven so that liquid IML moves between wafer stage WST1 and the final surface of projection optical system 13 between wafer stage WST2 and the final surface of projection optical system 13.

  Here, each of the same-surface plates P of wafer stages WST1 and WST2 has an overhang PP at a position where they can face each other. The movement of the liquid IML from one of the wafer stages WST1 and WST2 (for example, WST1) to the other (for example, WST2) is performed with the overhanging portion PP facing each other so that a gap is formed. In this specification, the movement of the liquid IML means changing the relative positional relationship between the liquid IML and the wafer stages WST1 and WST2. Typically, as described in this specification, the movement of the liquid IML changes the relative positional relationship between the liquid IML and the wafer stages WST1 and WST2 without changing the absolute position. To be made.

  The gap formed between the two overhanging parts PP is determined so that the two overhanging parts PP (two wafer stages WST1, WST2) do not collide with each other. The gap is preferably in the range of 0.1 to 0.3 mm, for example. The liquid IML is moved from one of the wafer stages WST1 and WST2 to the other by moving the wafer stages WST1 and WST2 in the Y direction while maintaining a gap between the two overhanging parts PP.

  FIG. 4 is a cross-sectional view schematically showing a configuration example of the liquid supply / recovery unit LSR along with the state of the periphery of the final surface of the projection optical system 13 during exposure. The liquid supply / recovery unit LSR includes a wafer, a wafer stage, or a liquid supply port SUP that opens downward and a liquid recovery port RET. The liquid IML is supplied to the space below the final surface FS of the projection optical system 13 through the liquid supply port SUP, and the liquid IML is recovered from the space through the liquid recovery port RET. The liquid supply port SUP and the liquid recovery port RET have a shape that surrounds an exposure region, such as a circular shape or an elliptical shape, and can be arranged concentrically, for example. The liquid recovery port RET is preferably disposed outside the liquid supply port SUP.

  At the time of exposure of wafer W, wafer stage WST (more specifically, it is prepared for wafer stage WST) such that distance L0 is formed between final surface FS of projection optical system 13 or the bottom surface of liquid supply / recovery unit LSR and wafer W. Drive mechanism ZDRV) is controlled by the main control unit 12. Here, in this embodiment, the final surface FS of the projection optical system 13 and the bottom surface of the liquid supply / recovery unit LSR belong to one plane.

  FIG. 5 is a schematic diagram showing a state in the vicinity of the final surface of the projection optical system 13 during the liquid movement for moving the liquid IML from one of the two wafer stages WST1 and WST2. During the liquid movement, the distance between the projecting portion PP of the same surface plate P of the wafer stage WST1 and the protrusion portion PP of the same surface plate P of the wafer stage WST2 is maintained at the distance D. In this state, when wafer stages WST1 and WST2 move in the Y direction, liquid IML moves from one of wafer stages WST1 and WST2 to the other. During this liquid movement, main control is performed on wafer stages WST1 and WST2 so that distance L1 (L0 <L1) is formed between final surface FS of projection optical system 13 or the bottom surface of liquid supply / recovery unit LSR and wafer W. Controlled by the unit 12. In this embodiment, this control is performed by driving the Z stage ZST by the drive mechanism ZDRV provided in the wafer stage WST.

  That is, when the liquid is moved, the distance between the final surface FS of the projection optical system 13 or the bottom surface of the liquid supply / recovery unit LSR and the wafer W is wider under the control of the main control unit 12 than when the wafer is exposed. By controlling the distance, the pressure of the liquid IML between the final surface FS of the projection optical system 13 and the wafer stage WST is controlled.

  Here, L1 is such that the pressure of the liquid IML at the time of liquid movement does not exceed the pressure of the liquid IML at the time of exposure of the wafer. It is determined to be smaller than the pressure.

  Note that controlling the distance between the final surface FS of the projection optical system 13 or the bottom surface of the liquid supply / recovery unit LSR and the wafer W is the same surface plate P as the final surface FS of the projection optical system 13 or the bottom surface of the liquid supply / recovery unit LSR. Alternatively, the distance from wafer stage WST is also controlled.

  As described above, an increase in the pressure of the liquid due to the movement of the wafer stage during the movement of the liquid can be suppressed by increasing the distance between the final surface of the projection optical system 13 and the wafer stage. Therefore, it is possible to prevent liquid leakage to the two wafer stages WST while securing the gap between the two wafer stages WST at a distance where they cannot collide when moving the liquid. Further, widening the interval during the movement of the liquid contributes to a reduction in the area occupied by the liquid on the same plate P, which is advantageous for reducing the overhanging portion PP.

  Further, in addition to or instead of the above-described interval control, the liquid supply operation and the recovery operation by the liquid supply / recovery unit LSR may be stopped when the liquid is moved. This can be done by the main control unit 12 instructing the liquid supply / recovery unit LSR to stop the liquid supply operation and the recovery operation at the start of the liquid movement. By stopping the liquid supply operation and the recovery operation by the liquid supply / recovery unit LSR during the liquid movement, an increase in the pressure of the liquid during the liquid movement can be suppressed.

  The liquid supply operation and the recovery operation may be stopped at the same time, or the recovery operation may be stopped after the supply operation is stopped. In an actual apparatus, when the liquid supply line is shut off by a valve and the pump of the liquid recovery line is stopped at the same time, the liquid recovery operation continues for a while after the pump is stopped due to the negative pressure of the recovery line. A liquid recovery operation can be performed.

  Thus, by stopping the liquid supply operation and the recovery operation by the liquid supply / recovery unit LSR during the liquid movement, the amount of the liquid on the wafer stage WST during the liquid movement is reduced, so the area for the liquid movement is reduced. This is also advantageous.

  FIG. 6 is a view showing the schematic arrangement of an exposure apparatus according to the second embodiment of the present invention. The exposure apparatus 200 according to the second embodiment of the present invention additionally includes a pressure control system for the liquid supply / recovery unit LSR to control the pressure of the liquid IML between the final surface of the projection optical system 13 and the wafer stage WST. It differs from the first embodiment in that it has. The pressure control system includes a detector 25 that detects the liquid IML between the final surface of the projection optical system 13 and the wafer stage WST, and the final surface of the projection optical system 13 and the wafer stage WST based on the output of the detector 25. And a pressure adjusting unit 26 that adjusts the pressure of the liquid IML. For example, the pressure adjusting unit 26 increases the pressure of the liquid IML by applying a positive pressure to the liquid IML in the space between the final surface of the projection optical system 13 and the wafer stage WST based on the output of the detector 25, The pressure of the liquid IML is decreased by applying a negative pressure to the liquid IML. The former can be achieved, for example, by injecting liquid into the space, and the latter can be achieved, for example, by sucking liquid from the space.

  The main control unit 12 controls the pressure control system including the detector 25 and the pressure adjustment unit 26 so that the pressure of the liquid IML becomes constant during the movement of the liquid. The main control unit 12 may further control the pressure of the liquid IML to be constant, for example, by operating the pressure control system not only during liquid movement but also during wafer exposure, for example.

  The pressure control in this embodiment is the pressure control in the first embodiment, that is, the pressure control by adjusting the distance between the final surface of the projection optical system 13 and the wafer stage, and / or the operation of the liquid supply / recovery unit. Can be used together with pressure control by stopping. Next, a device manufacturing method using the above exposure apparatus will be described. FIG. 7 is a diagram showing a flow of an entire manufacturing process of a semiconductor device. In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (reticle fabrication), a reticle (original) is fabricated based on the designed circuit pattern. On the other hand, in step 3 (wafer manufacture), a wafer (also referred to as a substrate) is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the reticle and wafer. The next step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, and is an assembly process (dicing, bonding), packaging process (chip encapsulation), etc. Process. In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, the semiconductor device is completed and shipped (step 7). FIG. 8 shows a detailed flow of the wafer process. In step 11 (oxidation), the wafer surface is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (CMP), the insulating film is planarized by a CMP process. In step 16 (resist process), a photosensitive agent is applied to the wafer. In step 17 (exposure), the above exposure apparatus is used to expose a wafer coated with a photosensitive agent through a mask on which a circuit pattern is formed, thereby forming a latent image pattern on the resist. In step 18 (development), the latent image pattern formed on the resist on the wafer is developed to form a resist pattern. In step 19 (etching), the layer or substrate under the resist pattern is etched through the portion where the resist pattern is opened. In step 20 (resist stripping), the resist that has become unnecessary after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

1 is a view showing a schematic configuration of an exposure apparatus according to a first embodiment of the present invention. It is a schematic diagram for demonstrating the liquid movement process which moves a liquid from one to the other of two wafer stages. It is a schematic diagram for demonstrating the liquid movement process which moves a liquid from one to the other of two wafer stages. It is sectional drawing which shows typically the structural example of a liquid supply collection | recovery part with the surroundings of the last surface of the projection optical system at the time of exposure. It is a schematic diagram which shows the mode of the vicinity of the last surface of a projection optical system at the time of the liquid movement which moves a liquid from one to the other of two wafer stages. It is a figure which shows schematic structure of the exposure apparatus of 2nd Embodiment of this invention. It is a figure which shows a device manufacturing method. It is a figure which shows a device manufacturing method.

Explanation of symbols

1: light source, 2: shaping optical system, 3: fly-eye lens, 4: condenser lens, 5: field stop, 6A, 6B: movable blind drive unit, 7A, 7B: movable blind, 8: relay lens, 10: reticle Stage control unit, 11: movable blind control unit, 12: main control unit, 13: projection optical system, 14, 15: wafer stage control unit, 16: alignment sensor, 17: alignment sensor control unit, 18: focus sensor, 19 : Focus sensor control unit, 20: Interferometer control unit, 21: Illumination area, 22, 23: Interferometer, 24: Liquid control unit, 25: Detector, 26: Fluid pressure adjustment unit, RST: Reticle stage, WST1, 2: Wafer stage, R: Reticle, SP: Reference plate, W1, 2: Wafer, WC: Wafer chuck, P: Coplanar plate, PP: Overhang , FM: reference mark, DR, DRFM: drainage section, IML: liquid, ES: exposure station, MS: measurement station, liquid supply / recovery section LSR, ZST: Z stage, ZDRV: drive mechanism, EXP: exposure area, 100, 200: Exposure apparatus

Claims (6)

An exposure apparatus that exposes a substrate by interposing a liquid between the projection optical system and the substrate,
First and second substrate stages that move while holding the substrate;
Between one substrate stage of the first and second substrate stages and the final surface of the projection optical system, between the other substrate stage of the first and second substrate stages and the final surface of the projection optical system. A controller for controlling the pressure of the liquid during liquid movement for moving the liquid between,
The control unit widens the distance between the first and second substrate stages and the final surface of the projection optical system during the liquid movement than when the substrate is exposed.
An exposure apparatus characterized by that.   The controller controls the first and second substrate stages and the projection optical system during the movement of the liquid so that the pressure of the liquid during the movement of the liquid does not exceed the pressure of the liquid during the exposure of the substrate. The exposure apparatus according to claim 1, wherein a distance from the final surface is adjusted.   The controller is configured to stop the supply operation and the recovery operation by the liquid supply and recovery unit that supplies the liquid to the space below the final surface of the projection optical system and recovers the liquid from the space when the liquid moves. The exposure apparatus according to claim 1 or 2, characterized in that:   The control unit includes a liquid supply / recovery unit that supplies liquid to a space below the final surface of the projection optical system and collects the liquid from the space so that the pressure of the liquid during the liquid movement is constant. The exposure apparatus according to claim 1, wherein the exposure apparatus is controlled. An exposure apparatus that exposes a substrate by interposing a liquid between the projection optical system and the substrate,
First and second substrate stages that move while holding the substrate;
A liquid supply / recovery unit for supplying liquid to a space below the final surface of the projection optical system and recovering the liquid from the space;
Between one substrate stage of the first and second substrate stages and the final surface of the projection optical system, between the other substrate stage of the first and second substrate stages and the final surface of the projection optical system. A control unit for stopping the supply operation and the recovery operation by the liquid supply and recovery unit when moving the liquid between,
An exposure apparatus comprising: A device manufacturing method comprising:
A step of exposing the substrate by the exposure apparatus according to claim 1;
Developing the substrate;
A device manufacturing method comprising:

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