JP2009092935A - Display device and method of manufacturing display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a display device which surely detects external light information, while suppressing increase of a peripheral region. <P>SOLUTION: A light shield region is formed inside an array substrate 2 provided right under a light sensor 7. As distance between the light sensor 7 and the light shield region is reduced, it is suppressed that light emitted from a backlight 15 is incident to a light sensor 7. Moreover, a concave section 13 is formed on the array substrate 2, and the light shield region is formed by filling a light absorbing material 14. Accordingly, it is possible to suppress cost, compared with the case that a light shield metal layer is formed between the array substrate 2 and the light sensor 7. Moreover, a concave section 13 is formed by a micro blast constructing method. Accordingly, the increase of the peripheral region can be suppressed by reducing the distance between a display section 6 and the light sensor 7. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a technology of a display device provided with an optical sensor.

  In recent years, liquid crystal display devices having features such as light weight, thinness, and low power consumption have been widely used as display devices for information devices such as personal computers and word processors and display devices for video devices such as televisions, video movies, and car navigation systems. Yes. In many cases, such a liquid crystal display device has a configuration in which a backlight for irradiating illumination light from behind the display element is incorporated in order to realize a bright display image.

  By the way, one of the advantages of the liquid crystal display device is its low power consumption. In general, the power consumption of the backlight is larger than that of the liquid crystal panel. In a liquid crystal display device, in order to obtain sufficient visibility, it is necessary to increase display luminance as much as possible. However, if the backlight is set brightly, the low power consumption described above is impaired.

  Therefore, it has been studied to adjust the brightness of the backlight according to the ambient illuminance (external light illuminance) to suppress power consumption as much as possible. For example, the brightness required to obtain sufficient visibility differs between the case where the ambient illuminance is low, such as at night, and the case where the ambient illuminance is high, such as outdoors during the day in fine weather. By adjusting the illuminance of the backlight to the minimum necessary according to the environmental illuminance, power consumption can be suppressed.

  In order to realize this, in a liquid crystal display device using a thin film transistor, a proposal has been made that an optical sensor (photosensor) is installed outside the display area of the substrate and the brightness of the backlight is adjusted using the output. (See Patent Documents 1 to 3).

  Patent Document 1 discloses a liquid crystal display plate, a backlight that emits light from the back side of the liquid crystal display plate, a controller that adjusts the amount of light of the backlight, a photodetector that is arranged side by side with the liquid crystal display plate, There is disclosed a liquid crystal display device that adjusts the amount of light of the backlight by detecting ambient brightness by this photodetector and adjusting the controller.

  Further, Patent Document 2 discloses a backlight dimming circuit for supplying a luminance dimming voltage to a backlight driving circuit of a liquid crystal display device having a backlight, and brightness around the surface side of the liquid crystal display panel. A plurality of optical sensors for detecting an ambient light illuminance signal, an average value calculating means for calculating an average value of all or a part of the ambient light illuminance signals output from these optical sensors, and an average value calculating means A backlight dimming circuit for a liquid crystal display device including a luminance adjustment circuit for adjusting the luminance of a backlight driving circuit based on the above is disclosed.

  Further, Patent Document 3 discloses a structure in which an optical sensor is disposed below the opening of the frame portion outside the display area of the counter substrate to receive ambient light.

  Next, a conventional display device including an optical sensor will be briefly described. FIG. 8 is a structural diagram showing the structure of a conventional display device. 8A is a cross-sectional view showing a cross section of the display device, and FIG. 8B is a plan view of the display device corresponding to the cross-sectional view shown in FIG. 8A.

  As shown in FIG. 8A, in the conventional display device 50, the array substrate 2 and the counter substrate 3 are bonded to each other at the periphery of the display device 50 using the sealing material 4, and the liquid crystal layer 5 is sealed in the gap. It is a configuration. Polarizing plates 8 and 9 are disposed outside the array substrate 2 and the counter substrate 3, respectively. On the back surface of the array substrate 2, a backlight 15 as a light source of the display device 50 is provided separately. In the peripheral region of the array substrate 2, a photosensor 7 for detecting the illuminance of outside light, a drive circuit 16 for driving the display unit 6, and the like are formed. A color filter layer 10 is formed at a position corresponding to the display unit 6 of the counter substrate 3, and light from the backlight 15 is directed to the viewer side in a peripheral region that does not contribute to display of an image around the color filter layer 10. A light blocking portion 11 that prevents transmission is formed. The light shielding unit 11 is provided with an opening 12 so that external light reaches the optical sensor 7.

Further, as shown in FIG. 9, by using a difference circuit that includes a light-shielded photosensor 17 and subtracts the dark current of the light-shielded photosensor 17 from the photocurrent of the photosensor 7, as the temperature of the display device increases. A method of suppressing the influence of the dark current that increases in such a way that it cannot be ignored with respect to the photocurrent at low illuminance has been studied (see Patent Document 4). FIG. 2 of Patent Document 4 shows an example of an optical sensor circuit that takes a difference between outputs of two optical sensors.
JP-A-4-174819 Japanese Patent Laid-Open No. 9-146073 JP 2005-345286 A JP 2006-118965 A

  However, as shown in FIG. 8A, when the backlight 15 is arranged on the back surface of the array substrate 2, the light shielding member 18 that prevents light emitted from the backlight 15 from being input to the optical sensor 7. For example, it is necessary to provide a light shielding tape between the backlight 15 and the array substrate 2. When a light shielding tape is used as the light shielding member 18 on the polarizing plate 8 disposed on the array substrate 2, the thickness of the polarizing plate 8 and the thickness of the array substrate 2 are between the light shielding member 18 and the optical sensor 7. There is a problem that the scattered light is likely to enter the distance.

  In addition, since it is difficult to increase the accuracy of attaching the light shielding tape, it is difficult to reduce the distance from the outer periphery of the display unit 6 to the optical sensor 7, and there is a problem that the peripheral area becomes large.

  Although it is possible to arrange the light shielding member 18 between the polarizing plate 8 and the array substrate 2, the distance between the optical sensor 7 from the outer periphery of the display unit 6 is short, and thus the polarizing plate 8 and the light shielding member 18 overlap. There was a problem that it was difficult to peel off or attach the display device.

  On the other hand, a structure in which a light-shielding metal layer is formed and light-shielded in the step before forming the optical sensor 7 on the array substrate 2 is most desirable, and the light-shielding performance is high. In addition, it is necessary to form a contact hole for fixing the potential, which causes a problem of increasing the cost of the display device. Furthermore, in order to achieve sufficient light shielding, the light shielding part must be made thicker, and as a result, unevenness occurs, and when the silicon layer is made into polysilicon by laser annealing, it is more than the area where the light shielding part is not formed. There is a problem that ablation occurs because the temperature tends to rise.

  The present invention has been made in view of the above, and the problem is that the disturbance of light from the backlight is suppressed, the optical information of the external light environment is reliably detected, and the surrounding area is increased. It is to provide a display device that suppresses.

  A display device according to a first aspect of the present invention includes an array substrate having a first surface on which a display portion is formed and a second surface facing the first surface, and an optical sensor formed on the first surface. The array substrate is characterized in that a light shielding region is formed at a position corresponding to the optical sensor between the first surface and the second surface.

  In the present invention, since the distance between the light sensor and the light shielding region can be reduced by forming the light shielding region at a position corresponding to the light sensor inside the array substrate, the light of the backlight incident on the array substrate can be reduced. It is possible to appropriately detect the illuminance of outside light by suppressing the scattered light such as the light from being received by the optical sensor.

  In the display device, the light-shielding region is formed by filling a concave portion formed on the second surface with a light absorbing member.

  In the present invention, a light-shielding metal layer is formed between the array substrate and the optical sensor by forming a recess on the second surface of the array substrate and filling the light absorbing member to form a light-shielding region. The cost can be reduced compared to the above.

  According to a second aspect of the present invention, there is provided a method for manufacturing a display device, comprising: an array substrate having a first surface on which a display unit is formed; a second surface opposite to the first surface; and the first surface. The array substrate has a light-shielding region formed at a position corresponding to the optical sensor between the first surface and the second surface. And a step of forming a concave portion at a position corresponding to the optical sensor on the second surface and a step of filling the concave portion with a light absorbing member.

  In the present invention, the distance between the optical sensor and the light shielding region can be reduced by forming a concave portion on the second surface of the array substrate and filling the light absorbing member to form the light shielding region. It is possible to suppress the scattered light such as the light of the backlight incident on the array substrate from being received by the optical sensor, and to appropriately detect the illuminance of outside light.

  In the method for manufacturing the display device, the step of forming the concave portion is performed by a microblast method.

  In the present invention, the concave portion is formed by the microblast method, so that the apparatus and the running cost are lower than those using a UV laser or a near infrared femtosecond laser, and the optical sensor is damaged. Enables deep drilling at high speed. Further, since the microblasting method has high processing position and depth accuracy, it is easy to reduce the distance between the display unit and the optical sensor.

  In the method for manufacturing the display device, the step of filling the light absorbing member is preferably performed by an ink jet method or a dispenser coating method for filling the light absorbing member such as black ink.

  ADVANTAGE OF THE INVENTION According to this invention, while suppressing the disturbance of the light from a backlight, while detecting the optical information of external light environment reliably, the display apparatus which suppresses the increase in a peripheral region can be provided.

  Hereinafter, the present embodiment will be described with reference to the drawings.

  FIG. 1 is a structural diagram showing the structure of the display device in this embodiment. 1A is a cross-sectional view showing a cross section of the display device, and FIG. 1B is a plan view of the display device corresponding to the cross-sectional view shown in FIG. In display device 1 according to the present embodiment, a pair of light-transmitting insulating substrates arranged opposite to each other constitutes a liquid crystal cell, and a liquid crystal layer in which a liquid crystal material is sealed is formed between the liquid crystal cells. Specifically, the peripheral edges of the array substrate 2 and the counter substrate 3 are joined by a sealing material 4, and a liquid crystal material is sealed in the gap to form the liquid crystal layer 5. Then, the backlight 15 is disposed apart from the array substrate 2. Further, when the display device 1 is a liquid crystal display device, polarizing plates 8 and 9 are disposed outside the array substrate 2 and the counter substrate 3, respectively.

  The array substrate 2 has, for example, a light transmissive insulating substrate made of glass or the like as a support base, and the display units 6 formed on the light transmissive insulating substrate have scanning lines arranged substantially parallel to each other at equal intervals, Signal lines arranged almost orthogonal to the scanning lines, an interlayer insulating film (transparent insulating film) interposed between the scanning lines and the signal lines to electrically insulate them, and in the vicinity of the intersection of the scanning lines and the signal lines The thin film transistor (TFT: Thin Film Transister) etc. as a switching element arrange | positioned in FIG. Then, pixel electrodes electrically connected to the switching elements through through holes formed in the interlayer insulating film are arranged in a matrix. The outer periphery of the display unit 6 is a peripheral region that does not contribute to image display. In the peripheral area, a drive circuit (not shown) for driving the display unit 6 and an optical sensor 7 for detecting external light illuminance are formed.

  The counter substrate 3 is disposed to face the array substrate 2, and, like the array substrate 2, uses a light transmissive insulating substrate made of glass or the like as a support base. A color filter layer 10 is formed on a portion corresponding to the display unit 6 on the surface on the liquid crystal layer 5 side, and a transparent counter electrode made of a transparent conductive material such as ITO (Indium Tin Oxide) is entirely covered to cover the surface. Is formed. The color filter layer 10 is a resin layer colored in colors by pigments or dyes, and is configured by combining filter layers of R (red), G (green), and B (blue) colors, for example. Although not shown, a so-called black matrix layer is formed at the pixel boundary portion of each color filter layer for the purpose of improving the contrast.

  A light shielding portion 11 is formed in a peripheral region of the counter substrate 3 where the color filter layer 10 is not formed. An opening 12 is formed at a location corresponding to the light sensor 7 of the light shielding portion 11. Through the opening 12, the optical sensor 7 can receive external light incident from the surface of the display device 1. On the other hand, a light shielding region is formed inside the array substrate 2 located immediately below the optical sensor 7. This light shielding region is obtained by filling the light absorbing member 14 into the concave portion 13 formed at a position corresponding to the optical sensor 7 on the surface of the array substrate 2 on the backlight 15 side. The size of the bottom of the recess 13 is at least larger than that of the optical sensor 7. In this way, by arranging the light absorbing member 14 inside the array substrate 2 located immediately below the optical sensor 7 to form the light shielding region, the distance between the light sensor 7 and the light shielding region can be reduced, so that the backlight It can suppress that the light radiated | emitted from 15 injects into the optical sensor 7. FIG. The OD value (Optical Density) of the light absorbing member 14 is desirably at least 3 or more.

  Next, a method for forming the recess will be described with reference to the drawings. FIG. 2 is a diagram illustrating a state in which the recess 13 is formed in the array substrate 2 and the light absorbing member 14 is filled. Each of FIGS. 2A to 2C is a cross-sectional view of the display device 1 in which the array substrate 2 in which the recesses 13 are formed is drawn upward in the drawing. FIG. 2A shows a state before the recess 13 is formed.

  First, the portion of the array substrate 2 where the recess 13 is to be formed is thinned to about 0.2 mm using, for example, chemical etching. Subsequently, as shown in FIG. 2B, using the microblast method, the distance between the bottom of the recess 13 and the optical sensor 7 is as short as possible, for example, about 0.05 mm to 0.01 mm. Etch. The microblasting method is a method of performing fine processing by ejecting fine abrasive grains of several to several tens of micrometers accelerated from a carrier gas such as compressed air from a nozzle and colliding with hard and brittle materials at high speed and high density. There is also a feature of fine brittle mode machining with less heat generation. It is desirable to optimize the injection pressure, the nozzle moving speed, the size of the injection material, etc. so as to control the accuracy in the depth direction and the surface roughness of the bottom surface.

  Thereafter, as shown in FIG. 2C, the light absorbing member 14 such as black ink is filled and dried by an ink jet method or a dispenser method. Of course, it goes without saying that the above process may be performed in a large plate process and then cut. Then, a display apparatus is formed by pasting a polarizing plate through a washing process.

  In this manner, by forming the recess 13 in the array substrate 2 and filling the light absorbing member 14, the light shielding region can be formed with high accuracy, so the distance between the display unit 6 and the optical sensor 7 can be reduced. An increase in the peripheral area can be suppressed.

  In addition, although the process using the microblast method without using a mask has been described with reference to FIG. 2, it is possible to efficiently perform processing with a predetermined pattern by using a masking process together. In other words, when the microblast process is applied to a large substrate on which a plurality of display devices are integrated, it is effective because batch processing is possible. Of course, it is needless to say that processing may be performed one by one using a masking process. For masking, it is preferable to use a photoresist or a printing mask in consideration of required accuracy, cost, and operability. The photoresist mask can cope with the most accurate processing. The resist is generally sold as a dry film, and the resolution varies depending on the thickness of the film. As an example of high-definition masking, a line width of 20 μm can be resolved with Line / Space = 1/3, and fine grooving can be performed by microblasting. A photosensitive urethane resin is generally used for the dry film so as to absorb the collision energy of abrasive grains. Further, the microblasting method may be used in combination since it can be applied to groove processing for dividing a display device integrated on a large substrate.

  FIG. 3 is a configuration diagram showing an example of the configuration of the thin film transistor and the optical sensor 7 formed on the array substrate 2. 3A shows a configuration of an n-channel thin film transistor, FIG. 3B shows a configuration of a p-channel thin film transistor, and FIG. 3C shows a PIN (p-intrisic-n) diode used as the optical sensor 7. The structure of is shown.

  First, the thin film transistor in this embodiment will be described with reference to FIGS. 3A and 3B. In the n-channel thin film transistor and the p-channel thin film transistor, polycrystalline semiconductor layers (polysilicon layers) 21A and 21B are formed on the array substrate 2 via an undercoat layer 20, and the polycrystalline semiconductor layers 21A and 21B are formed as channel layers. It is what.

  The undercoat layer 20 is formed on the array substrate 2 as described above, and this is to flatten the surface of the array substrate 2 by closing the scratches and holes on the surface thereof, and to remove impurities contained in the array substrate 2. It is formed for the purpose of preventing diffusion into the polycrystalline semiconductor layers 21A and 21B. The undercoat layer 20 is formed by forming a silicon oxide film, a silicon nitride film, or the like. For example, the undercoat layer 20 includes a planarization layer made of a fluidized resin that is fluidized by heat treatment, and a coating that prevents diffusion of impurities. It is also possible to have a laminated structure composed of layers. Alternatively, when the array substrate 2 is excellent in planarization and contains a small amount of impurities, the undercoat layer 20 can be omitted.

  For example, the polycrystalline semiconductor layers 21A and 21B formed on the undercoat layer 20 are annealed to amorphous silicon (a-Si) formed by a plasma CVD method, and then polycrystallineized by laser irradiation or the like. It is formed by. The polycrystalline semiconductor layers 21A and 21B are separated into islands by etching and arranged in a matrix.

  The polycrystalline semiconductor layer 21A corresponds to an n-channel thin film transistor, and the polycrystalline semiconductor layer 21B corresponds to a p-channel thin film transistor. Source regions 21Aa and 21Ba and drain regions 21Ab and 21Bb are formed in the polycrystalline semiconductor layers 21A and 21B by impurity implantation. Further, in the n-channel thin film transistor, inside the source region 21Aa and the drain region 21Ab, LDD regions (low-concentration impurity diffusion regions) 21Ac and 21Ad are formed.

  In any thin film transistor, the first metal 24 as the gate electrode and the first metal as the source or drain electrode are disposed on the polycrystalline semiconductor layers 21A and 21B via the first insulating layer 22 and the second insulating layer 23. Two metals 25 are formed.

Then, the optical sensor 7 in this Embodiment is demonstrated using FIG.3 (c). The optical sensor 7 in the present embodiment is formed of a horizontal PIN photodiode. Similarly to the above-described thin film transistor, a PIN photodiode includes a polycrystalline semiconductor layer 21C formed on the array substrate 2 with an undercoat layer 20 interposed therebetween, and p ⁺ regions 23Ca, p ⁻ regions 23Cb, and n ⁺ regions 23Cd are laterally arranged. It is formed. When the p ⁺ side is set to GND (0 V) and the n ⁺ side is set to 5 V, a photocurrent according to external light irradiation flows through both ends of the diode.

Although a resist mask may be used to form the i (intrisic) region (p ⁻ ), it may be formed by using a gate electrode forming step of an n-channel thin film transistor and a p-channel thin film transistor that are formed simultaneously. . Also in the PIN photodiode shown in the figure, the first metal 24 and the second metal 25 are formed on the polycrystalline semiconductor layer 23C via the first insulating layer 22 and the second insulating layer 23. Here, the first metal 24 as the gate electrode may be grounded to a ground potential, for example, or may be controlled to obtain a desired characteristic.

Although not shown in the figure, a circuit configuration is provided in which two photosensors, that is, the photosensor 7 and the light-shielded photosensor are arranged, and the sensor current flowing through the light-shielded photosensor is subtracted from the sensor current flowing through the photosensor 7. Thereby, the influence of the thermal current which becomes a problem with a temperature rise can be suppressed. The light-shielded optical sensor is disposed in the vicinity of the optical sensor 7 on which the opening 12 on the array substrate 2 is not formed. It is desirable that the light-shielded optical sensor is also formed in a place where the light-shielded light is shielded by the recess 13 like the optical sensor 7. The light-shielded optical sensor is provided with a metal wiring material on the first insulating layer 22 that is an upper layer of the PIN photodiode so as to cover the channel region formed by the p ⁺ region 21Ca, the p ⁻ region 21Cb, and the n ⁺ region 21Cd. For example, a light shielding region may be formed using the above.

  Then, the measuring method of the intensity | strength of the external light illuminance detected with the optical sensor 7 is demonstrated. FIG. 4 is a configuration diagram showing a circuit configuration of the optical sensor. The optical sensor 7 includes a photodiode 30 whose p region side is grounded, and a capacitor element 31 connected in parallel to the photodiode 30, and a predetermined voltage Vprc is precharged to the capacitor element 31 at a predetermined timing. Then, a photocurrent according to the external light illuminance flows through the photodiode 30.

  FIG. 5 is a circuit block diagram showing the circuit configuration of the sensor circuit. The sensor circuit includes an amplifier 40 and an A / D converter 41 formed inside the display device 1 and an LSI (Large Scale Integration) 42 formed outside the display device 1. The sensor circuit amplifies the photocurrent output from the photosensor 7 by the amplifier 40, converts the amplified photocurrent to a digital value by the A / D converter 41, and then based on the converted digital value, the LSI 42 Thus, the light amount of the backlight 15 is adjusted. The LSI 42 includes an illuminance calculation circuit 42a that calculates illuminance based on the converted digital value, a control signal generation circuit 42b that generates a predetermined control signal, and the like.

  FIG. 6 is a diagram illustrating how the voltage / current output from the optical sensor changes with time. When external light is applied to the optical sensor 7, a current flows through the photodiode 30 and gradually decreases from the initial precharge voltage Vprc to the GND voltage. This is converted into a digital signal by the A / D converter 41 at a predetermined timing and output to the LSI 42 at a predetermined timing. If the absolute value of the slope shown in the figure is large, it can be determined that the external light illuminance is strong, and if it is small, the external light illuminance is weak.

  For example, the LSI 42 receives the voltage / current value A received at time t, the voltage / current value B received at time t + 1, and the voltage / current value C received at time t + 2. Then, the illuminance calculation circuit 42a compares the difference S1 between the voltage / current value A and the voltage / current value B with the difference S2 between the voltage / current value B and the voltage / current value C. When the difference S1 is larger than the difference S2, it can be determined that the inclination shown in FIG. 5 is small and the external light illuminance has become weak. Therefore, the control signal generation circuit 42b adjusts the backlight 15 so as to increase the amount of light.

  When a plurality of photosensors 7 are arranged, it is desirable to output the output of each photosensor 7 to the outside via a source driver, for example. In addition, when some of the optical sensors 7 are shielded by a person, an object, a finger, etc. and receive external light from a shadow portion, processing is performed to remove the comparison from the output of other optical sensors 7 It is desirable to do. Furthermore, since the use of rotating display devices is increasing in mobile phones and the like, it is desirable to provide a plurality of optical sensors to suppress the influence of shadows as described above. Although it may be performed in the device body, a majority circuit may be provided on the array substrate.

  Next, another display device in this embodiment will be described. FIG. 7 is a diagram illustrating the structure of another display device. 7A is a cross-sectional view showing a cross section of the display device, and FIG. 7B is a plan view of the display device corresponding to the cross-sectional view shown in FIG. 7B. The display device shown in FIG. 7 is the same as that shown in FIG. 1 except that the front and back of the liquid crystal panel are reversed so that external light is incident from the array substrate 2 on which the photosensors 7 are arranged. A thermal current is detected by arranging a light sensor 17 that is shielded on the surface. Since the counter substrate 3 is disposed on the backlight 15 side, the opening portion 12 formed in the light shielding portion 11 in the display device of FIG.

  The light sensor 17 that is shielded from light is formed in the peripheral region. The optical sensor 7 that detects the illuminance of outside light is formed in a seal region where the array substrate 2 and the seal material 4 are joined. A concave portion 13 is formed on the outside light side of the array substrate 2 corresponding to the optical sensor 17 and is filled with the light absorbing member 14. Thereby, the optical sensor 7 receives external light, but the optical sensor 17 is configured to shield external light. Further, since the light shielding portion 11 is formed in the peripheral region of the counter substrate 3 arranged on the backlight 15 side, the light emitted from the backlight 15 does not enter the optical sensor 7 and the optical sensor 17. .

  By taking the difference between the output of the optical sensor 7 and the output of the optical sensor 17, the ambient light illuminance can be detected in consideration of the increase in the thermal current flowing through the optical sensor 7 accompanying the temperature rise of the liquid crystal panel. It is possible to prevent the detection of the external light illuminance at the time of illuminance from becoming difficult.

  It is desirable that the optical sensor 7 and the optical sensor 17 are arranged close to each other. A light shielding region is formed only at a location corresponding to the optical sensor 17, and only the optical sensor 17 is shielded. In this embodiment, external light is received by the optical sensor 7 formed in the seal area. However, a light-shielding area is formed corresponding to the optical sensor formed in the seal area, and external light is received by the other optical sensor. You may comprise so that it may light-receive. As described above, forming the optical sensor in the seal region has an effect of suppressing an increase in the peripheral region.

  As described above, according to the present embodiment, the distance between the light sensor 7 and the light shielding region can be reduced by forming the light shielding region inside the array substrate 2 immediately below the light sensor 7, so that the backlight can be reduced. It can suppress that the light radiated | emitted from 15 injects into the optical sensor 7. FIG. In addition, the concave portion 13 is formed in the array substrate 2 and the light absorbing member 14 is filled to form a light shielding region, thereby reducing the cost compared to forming a light shielding metal layer between the array substrate 2 and the optical sensor 7. Can be suppressed.

  According to the present embodiment, by using the microblasting method for forming the concave portion 13, the damage to the optical sensor is small, the controllability in the depth direction is high, and the distance between the bottom surface of the concave portion 13 and the optical sensor is made as short as possible. can do. In addition, the microblast method has an advantage that the apparatus cost and the running cost are low. Furthermore, since the microblasting method has a high processing position and depth accuracy, the distance between the display unit 6 and the optical sensor 7 can be shortened, and an increase in the peripheral area can be suppressed.

  According to the present embodiment, the light absorbing member 14 can be accurately disposed in the formed recess 13 by an ink jet method or a dispenser method. Moreover, since the depth of the recessed part 13 is also deep, sufficient light-shielding property can be ensured.

  In the present embodiment, the description has been made on the assumption that the liquid crystal is sealed in the gap between the array substrate 2 and the counter substrate 3. However, the present invention is not limited to the liquid crystal. For example, it is replaced with an organic EL (Electroluminescence Display). However, the same effect can be obtained.

1A and 1B are diagrams illustrating a configuration of a display device according to an embodiment, in which FIG. 1A is a cross-sectional view of the display device, and FIG. 1B is a plan view of the display device. It is explanatory drawing which shows the manufacturing method of the display apparatus shown in FIG. 3A and 3B are cross-sectional views showing a configuration of a thin film transistor and a photosensor formed on the array substrate of the display device shown in FIG. 1, in which FIG. 3A shows an n-channel thin film transistor, and FIG. 3B shows a p-channel thin film transistor. FIG. 3C shows an optical sensor. It is a circuit diagram which shows the structure of an optical sensor. It is a block diagram which shows the structure of a sensor circuit. It is a figure which shows the mode of the time change of an optical sensor output. FIG. 7A is a diagram illustrating a configuration of another display device according to an embodiment, FIG. 7A is a cross-sectional view of the display device, and FIG. 7B is a plan view of the display device. 8A and 8B are diagrams illustrating a configuration of a conventional display device, in which FIG. 8A is a cross-sectional view of the conventional display device, and FIG. 8B is a plan view of the conventional display device. It is a top view which shows the structure of another conventional display apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Display apparatus 2 ... Array substrate 3 ... Opposite substrate 4 ... Sealing material 5 ... Liquid crystal layer 6 ... Display part 7, 17 ... Optical sensor 8, 9 ... Polarizing plate 10 ... Color filter layer 11 ... Light-shielding part 12 ... Opening part 13 DESCRIPTION OF SYMBOLS ... Recessed part 14 ... Light absorption member 15 ... Back light 16 ... Drive circuit 18 ... Light shielding member 20 ... Undercoat layer 21A, 21B, 21C ... Polycrystalline semiconductor layer 22 ... First insulating layer 23 ... Second insulating layer 24 ... First Metal 25 ... Second metal 30 ... Photodiode 31 ... Capacitor element 40 ... Amplifier 41 ... Converter 42 ... LSI
42a ... Illuminance calculation circuit 42b ... Control signal generation circuit 50 ... Display device

Claims (5)

An array substrate having a first surface on which a display unit is formed and a second surface opposite to the first surface;
An optical sensor formed on the first surface,
The display device, wherein the array substrate is formed with a light shielding region at a position corresponding to the photosensor between the first surface and the second surface.   The display device according to claim 1, wherein the light-shielding region is formed by filling a light-absorbing member in a recess formed in the second surface. An array substrate having a first surface on which a display portion is formed and a second surface facing the first surface; and an optical sensor formed on the first surface, wherein the array substrate is A method for manufacturing a display device, wherein a light shielding region is formed at a position corresponding to the photosensor between the first surface and the second surface,
Forming a recess at a position corresponding to the photosensor on the second surface;
Filling the recess with a light absorbing member;
A method for manufacturing a display device, comprising:   The method for manufacturing a display device according to claim 3, wherein the step of forming the recess is performed by a microblast method.   5. The method for manufacturing a display device according to claim 3, wherein the step of filling the light absorbing member is performed by an ink jet method or a dispenser coating method.

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