JP2009088553A - Group-iii nitride semiconductor layer, light emitting layer, and iii-group nitride semiconductor light emitting element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a group-III nitride semiconductor while-color light emitting element having high light intensity and color rendering property, which is easily formed in a simple structure while eliminating the need for delicate composition adjustment of phosphor. <P>SOLUTION: The group-III nitride semiconductor layer 5b provided on the surface of a substrate 1 forms one or more well layer 5b as part of a light emitting layer 5 in a multiple quantum well structure. It is formed of a n-type gallium indium nitride (a composition formula Ga<SB>x</SB>In<SB>1-x</SB>N: 0<x<1) to which acceptor impurities are added and which shows such multiple wavelength light emission that a plurality of lights numerically independent and different in wavelength are emitted at the same time separately from a band end light emission. The gallium indium nitride has an indium composition of 0.01 to 0.25 and contains magnesium having an atom concentration of 4×10<SP>17</SP>cm<SP>-3</SP>to 1×10<SP>19</SP>cm<SP>-3</SP>, as acceptor impurities. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a group III nitride semiconductor comprising a substrate, and a light emitting layer having a multiple quantum well structure including a barrier layer and a well layer made of a group III nitride semiconductor material containing gallium provided on the surface of the substrate The present invention relates to a light emitting element, a group III nitride semiconductor layer forming the well layer, and a light emitting layer.

  Conventionally, a group III nitride semiconductor material such as gallium nitride / indium (GaInN) constitutes a light emitting layer of a light emitting diode (abbreviation: LED) or laser diode (abbreviation: LD) of a short wavelength such as white or blue. It is used for this purpose (see, for example, Patent Document 1). Aluminum gallium nitride (AlGaN) is used as a material for forming a light emitting layer of a near-ultraviolet LED or an ultraviolet LED (see, for example, Patent Document 2).

  A type of conventional white LED is a chip-shaped or lamp-shaped red LED or green LED that emits light of each of the three primary colors of light (red (R), green (G), and blue (B)). And blue LEDs are arranged on the same substrate in a number corresponding to the relative ratio of their emission intensity, and as a whole, white light is emitted by color mixing (for example, Patent Document 3). To 9). In other words, it is an array type (module) white LED.

  In addition, another type of conventional white LED is configured using a light emitting layer made of, for example, a group III nitride semiconductor, which emits red light, green light, or blue light separately formed on one substrate. (See, for example, Patent Documents 10 and 11). It is assumed that white color is exhibited by mixing light emission corresponding to the three primary colors (red (R), green (G), and blue (B)) of light emitted from each light emitting layer. LED.

  In addition, another type of conventional white LED is a white LED in which a light emitting layer that emits light of a complementary color is provided on each single substrate. For example, a group III nitride semiconductor light emitting layer that emits blue light and a light emitting layer that emits yellow light are formed on the same substrate, and two different wavelengths of two colors emitted from the respective light emitting layers ( For example, a white LED obtained by mixing blue and yellow light (for example, see Patent Document 12). It is a complementary color type white LED that utilizes the fact that light of two colors (two wavelengths) in a complementary color relationship is mixed to be visually recognized as white.

In addition to the above three types of LEDs, a phosphor that emits fluorescence having a wavelength different from that of the light emitted from the light emitting layer is obtained using light emitted from the group III nitride semiconductor light emitting layer. It is an LED that excites and converts the wavelength of light emission (see, for example, Patent Document 13). For example, an LED that emits white light by exciting a phosphor using blue light or ultraviolet light emitted from a group III nitride semiconductor light emitting layer is a so-called fluorescent white LED (for example, Patent Documents 14 to 14). 16). Yttrium, aluminum, garnet (Y ₃ Al ₅ O ₁₂ ) or the like is used as a phosphor that is excited by blue light or ultraviolet light and exhibits white (see, for example, Patent Documents 17 to 19).
Japanese Patent Publication No.55-3834 JP 2001-60719 A Japanese Patent Laid-Open No. 06-314824 Japanese Patent Application Laid-Open No. 07-7223 Japanese Patent Laid-Open No. 07-15044 Japanese Patent Application Laid-Open No. 07-235624 JP 07-288341 A Japanese Patent Laid-Open No. 07-283438 JP 07-335842 A Japanese Patent Laid-Open No. 06-53549 Japanese Patent Laid-Open No. 07-183576 JP 2001-257379 A Japanese Patent Application Laid-Open No. 07-99345 Japanese Patent No. 2900928 Japanese Patent No. 3724490 Japanese Patent No. 3724498 Japanese Patent No. 2927279 Japanese Patent No. 3503139 Japanese Patent No. 3700502

  However, in the above-described array type white LED, for example, a light emitting layer that emits each color thereof as compared with the installation plane area necessary for stacking and arranging red, green, or blue LED chips or lamps. The plane area is significantly smaller (see Patent Documents 3, 5 to 9 above). That is, since the plane area occupied by the light emitting layer that emits light is extremely small compared to the plane area required for laying the lamp, it is disadvantageous for obtaining a light emitting element with high luminous intensity (lumen / area). is there.

For example, if an approximately square LED chip with a side of 0.3 mm is surrounded by a resin and the lamp has a general shape with a vertical cross section of a round shape and a horizontal cross section of a round shape, The diameter (diameter) is generally 3 mm to 5 mm (see paragraph [0007] of Patent Document 3 above). Accordingly, in the case of a lamp having an outer diameter of 5 mm, even if the light emitting layer is present on the entire plane of the chip as compared with the flat area of the lamp (about 20 mm ² ), the flat area is the same. Is remarkably small at 0.09 mm ² . Therefore, there is no advantage in obtaining a light emitting device with higher luminous intensity.

  Moreover, in said RGB type white LED, it is necessary to provide the light emitting layer which can each radiate | emit red (R), green (B), or blue (B) separately. In addition to the need to provide a plurality of light emitting layers, in order to confine carriers (electrons and holes) in the light emitting layer and to confine the light emission caused by their radiative recombination, the light emitting layer has an incidental effect. Thus, it is necessary to provide a clad layer or the like for each light emitting layer. Accordingly, a process for forming an RGB type white LED, such as a plurality of light emitting layers on a single substrate, and more preferably, a clad layer or the like that is heterojunction bonded to each light emitting layer is required. Is cumbersome and redundant. In that case, it is necessary to provide an electrode for p-type and n-type for each light-emitting layer that emits light of different colors, and the light-emitting layer is scraped off in order to provide an electrode on the corresponding electrically conductive cladding layer or the like. The luminous intensity of each light emission will also deteriorate.

  Further, in the above complementary color type white LED, in order to emit light having a complementary color, two or more light emitting layers are also required. Further, in order to obtain high intensity light emission, as in the case of the RGB type white LED, a clad layer is bonded to each light emitting layer, and a single hetero (English abbreviation: SH) or double It is necessary to form a light emitting portion having a (double) hetero (English abbreviation: DH) junction structure. Therefore, the formation of the complementary white LED requires a complicated and redundant process, as in the case of the RGB white LED.

  In addition, even in the case where white LEDs are formed by arranging LEDs that emit complementary colors, such as blue and yellow, close to each other (“Wide Gap Semiconductor Optical / Electronic Device” (2006) March 31, published by Morikita Publishing Co., Ltd., 1st edition, 1st printing), pp. 173-174), emits blue or yellow light compared to the plane area required for LED placement Since the total plane area of the light emitting layer is small, it cannot necessarily be advantageous for obtaining a light emitting element with high luminous intensity.

  In addition, in the complementary color type white LED, the color tone of the resulting white light slightly changes depending on the wavelengths of the two colors of light that are complementary to each other to obtain white light. There's a problem. That is, in a complementary color type white LED, since it is usually light of two wavelengths at most, it is technically necessary to stably obtain a white LED that provides high and constant color rendering in any case. It is difficult.

In addition, even in the above-described fluorescent white LED, in order to stably obtain white light having a constant color tone by exciting the phosphor, the wavelength of light emitted from the light emitting layer, which becomes excitation light, is made constant with good reproducibility. There are technical difficulties that must be met. In addition, it is necessary to artificially adjust the composition of Y ₃ Al ₅ O _{12 and the} like to which a rare-earth element used as a phosphor is added according to variations in the wavelength of light emitted from the light emitting layer.

  The present invention has been made in view of the above circumstances, and can be easily formed with a simple structure, can increase the luminous intensity, can also have a high color rendering property and can be stably stabilized, and can further subtle the phosphor. An object of the present invention is to provide a group III nitride semiconductor light emitting device, a group III nitride semiconductor layer, and a light emitting layer that do not require any composition adjustment.

In order to achieve the above object, the present invention provides (a) a group III nitride semiconductor layer which is provided on the surface of a substrate and forms one or a plurality of well layers constituting a light emitting layer having a multiple quantum well structure. In addition to the band edge emission, an n-type gallium indium nitride (compositional formula Ga _x In _{1− X} N: 0 <X <1), the gallium nitride indium has an indium composition (1-X) of 0.01 to 0.25 and magnesium (Mg) as an acceptor impurity is 4 × A group III nitride semiconductor layer comprising an atomic concentration of 10 ¹⁷ cm ⁻³ or more and 1 × 10 ¹⁹ cm ⁻³ or less.
In order to achieve the above object, the present invention provides: (b) a light emitting layer having a multiple quantum well structure including one or a plurality of well layers provided on a surface of a substrate, wherein the well layer includes the above (a) The group III nitride semiconductor layer described in the item (1), wherein the light emitting layer emits a plurality of light emissions having different wavelengths depending on a level formed by magnesium contained in the well layer. It is a light emitting layer.
In order to achieve the above object, the present invention provides (c) a light emitting layer having a multiple quantum well structure provided on the surface of a substrate and having an n-type group III nitride semiconductor layer as a well layer. In the group nitride semiconductor light-emitting device, the well layer is doped with an acceptor impurity, and separately from the band-edge light emission, the well layer exhibits n-type light emission that emits a plurality of light emissions having different wavelengths simultaneously. Gallium nitride indium (composition formula Ga _x In _1-X N: 0 <X <1), and the gallium nitride indium has an indium composition (1-X) of 0.01 or more and 0.25 or less. The group III nitride semiconductor light-emitting device includes magnesium (Mg) as an acceptor impurity at an atomic concentration of 4 × 10 ¹⁷ cm ⁻³ or more and 1 × 10 ¹⁹ cm ⁻³ or less.
(1) In the first invention, there is provided a substrate and a light emitting layer having a multiple quantum well structure including a barrier layer and a well layer made of a group III nitride semiconductor material containing gallium provided on the surface of the substrate. In the group III nitride semiconductor light-emitting device provided, each of the well layers having the multiple quantum well structure is composed of a group III nitride semiconductor layer having the same conductivity type as the barrier layer, and acceptor impurities are added to each other to form a layer. It is characterized by having different thicknesses.

  (2) According to a second invention, in the configuration of the invention described in the above item (1), each of the well layers having the multiple quantum well structure is configured to extract light emitted from the light emitting layer from the surface side of the substrate. Towards, the layer thickness is gradually reduced.

  (3) According to a third invention, in the configuration of the invention described in the above item (1) or (2), each of the well layers forming the multiple quantum well structure has different atomic concentrations of acceptor impurities. It is what.

  (4) According to a fourth invention, in the configuration of the invention described in any one of the above items (1) to (3), the substrate is made of a silicon single crystal and forms the multiple quantum well structure. Each of the well layers is intentionally added with magnesium as an acceptor impurity.

  According to the present invention, since the light emitting layer has a multiple quantum well structure including a barrier layer and a well layer, a white light emitting element can be easily formed with a simple structure, and the laying area is substantially equal to the plane area of the light emitting layer. Since they are the same, the luminous intensity can be increased. In addition, since a light emitting layer having a multi-quantum well structure capable of emitting light of multiple wavelengths although being numerically single is used, if electrodes for p-type and n-type are provided only for that single light-emitting layer. As compared with the case of the conventional RGB type white LED, the area where the light emitting layer has to be scraped can be greatly reduced, and the light emission efficiency can be improved.

  In particular, since the well layer is composed of a plurality of well layers having different layer thicknesses, it is possible to superimpose a plurality of wavelengths of light emitted by each well layer exhibiting multicolor light emission, and color rendering of white light emission. Since the white light can be obtained without using a fluorescent material, fine composition adjustment of the phosphor becomes unnecessary.

  In addition, since the acceptor impurity is intentionally added to each of the well layers, it is possible to construct a well layer that can produce multicolor light emission having different wavelengths, and can emit multicolor light emission while being numerically single. As a light emitting layer having a multi-quantum well structure can be provided, the color rendering property of white light emission can be stabilized stably and white light can be obtained without using a fluorescent material. Subtle composition adjustment is also unnecessary.

  Furthermore, since the well layer is composed of a layer having the same conductivity type as that of the barrier layer, the formation of a pn junction with the barrier layer can be avoided, and therefore, the multi-quantum well structure having excellent conductivity can be avoided. A light emitting layer can be comprised.

  According to the present invention, a well layer made of a thin group III nitride semiconductor layer is arranged in a direction from which light emitted from the light emitting layer is extracted from the surface side of the substrate, thereby forming a light emitting layer having a multiple quantum well structure. Since it is configured, light emitted from each well layer forming the multiple quantum well structure can be efficiently extracted in the viewing direction.

  Short-wavelength light is absorbed by the well layer that emits long-wavelength light. However, under the structure of the present invention, the well layer is formed wide on the surface side of the substrate, the quantum level is low, and the long-wavelength light is A well layer that emits multi-wavelength light including a light-emitting component is disposed, and the well layer width is narrowly formed in the light-emission direction. A light emitting layer having a multiple quantum well structure is formed by arranging well layers. That is, a configuration in which light having a short wavelength is not passed through a well layer that emits light having a longer wavelength. For this reason, under the configuration of the present invention, the light emitted from the well layer disposed on the substrate surface side is not absorbed by the well layer disposed in the light extraction direction, and the light is extracted in the external visual field direction. The light emitted from each well layer can be efficiently extracted in the viewing direction. Further, the color rendering properties can be improved, and a high-intensity white LED can be realized.

  According to the present invention, the multi-quantum well structure light-emitting layer is configured by using a plurality of well layers exhibiting a plurality of light-emissions having different wavelengths and different atomic concentrations of the added acceptor impurities. As a result, it is possible to obtain a light emitting layer that emits light of multiple wavelengths although it is single, for example, as compared to the so-called complementary white LED described above, in which light of two different wavelengths having a complementary color relationship is mixed into white light. Thus, it is possible to provide a white LED that is more excellent in color rendering.

  Embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a schematic view schematically showing a cross-sectional structure of a group III nitride semiconductor light emitting device of the present invention. As shown in FIG. 1, the group III nitride semiconductor light-emitting device of the present invention includes a substrate 1, a barrier layer 5a made of a group III nitride semiconductor material containing gallium provided on the surface of the substrate 1, and a well layer 5b. And a light-emitting layer 5 having a multiple quantum well structure and each of the well layers 5b having the multiple quantum well structure has a group III nitride semiconductor having the same conductivity type as that of the barrier layer 5a. It consists of layers, acceptor impurities are added, and the layers have different thicknesses.

As the substrate 1, an insulating or conductive oxide crystal such as sapphire (α-Al ₂ O ₃ single crystal) or zinc oxide (ZnO) having a polar or nonpolar crystal plane as its surface, 6H, 4H or 3C type Examples thereof include a substrate made of a carbide crystal such as silicon carbide (SiC) or a semiconductor crystal of silicon (Si). In particular, a silicon single crystal exhibiting n-type or p-type conductivity and having a {111} crystal face as the surface can be suitably used as a substrate for forming the multiple quantum well structure according to the present invention on the surface. .

In the present invention, the well layer 5b having a multiple quantum well structure formed on the surface of the substrate 1 is made of a material that can emit light of a plurality of wavelengths having different wavelengths independently. Considering the color rendering properties of light emitted from the LED, it is desirable that a large number (multi-wavelength) of light emitted from the well layer 5b is dispersed in a wide wavelength range. In order to obtain multi-wavelength light emission over a wide wavelength range, it is desirable to form the well layer 5b from a semiconductor material having a large forbidden band energy in a multiple quantum well structure. An example of the material is a group III nitride semiconductor material containing gallium (Ga). For example, it can be preferably composed of a wide band gap semiconductor material such as gallium nitride (GaN) or Ga _x In _1-x N (0 <x <1) which is a mixed crystal of gallium nitride (GaN) and indium nitride (InN).

The barrier layer 5a having a multiple quantum well structure together with the well layer 5b is made of, for example, a group III nitride semiconductor material having a larger band gap energy than the well layer 5b. For example, for the well layer 5b made of a Ga _0.85 In _0.15 N mixed crystal, the barrier layer 5a is formed of GaN. The barrier layer 5a and the well layer 5b having a multiple quantum well structure are composed of layers having the same conductivity type. For example, the n-type well layer 5b and the n-type barrier layer 5a form an n-type multiple quantum well structure as a whole. Thereby, it is possible to avoid the formation of a pn junction between the well layer 5b and the barrier layer 5a, and thus it is possible to configure the light emitting layer 5 having a multiple quantum well structure having excellent conductivity.

In order to make the well layer 5b and the barrier layer 5a have the same conductivity type, it is not essential to add impurities to the well layer 5b. For example, in a so-called undoped state where impurities are not added intentionally, or unintentionally from the growth environment for forming the well layer 5b, the carrier concentration is 5 × 10 ¹⁷ due to impurity contamination due to negligence. If it is in the range of cm ⁻³ or more and 5 × 10 ¹⁹ cm ⁻³ or less, it can be used as the well layer 5b according to the present invention.

In the present invention, the well layer 5b having a multiple quantum well structure is particularly composed of a group III nitride semiconductor layer containing Ga to which an acceptor impurity is added. For example, the well layer 5b is composed of an n-type Ga _0.75 In _0.25 N mixed crystal to which an acceptor impurity is added while maintaining the same n-type conductivity as that of the barrier layer 5a. The well layer 5b having the same conductivity type as that of the barrier layer 5a and containing acceptor impurities, while being single, produces multi-wavelength light emission having different wavelengths that are advantageous for obtaining white light by color mixing. Make it.

  A technique for forming a light emitting layer 5 made of GaInN by adding zinc (Zn) as an acceptor impurity is disclosed (see Japanese Patent Publication No. 55-3834). However, the well layer 5b in which only Zn is added as an acceptor impurity has a high resistance and does not stably form the well layer 5b having sufficient conductivity. On the other hand, for the formation of the well layer 5b according to the present invention, magnesium (Mg) can be suitably used among Group II impurities that can be an acceptor for the Group III nitride semiconductor.

  The light emitting layer 5 having a multiple quantum well structure according to the present invention includes, for example, a metal organic vapor phase deposition (abbreviated as MOCVD or MOVPE) method, a molecular beam epitaxial (MBE) method, a hydride method, a halide (halide). ) Method or the like. In particular, the MBE method can form the barrier layer 5a and the well layer 5b at a lower temperature than the other vapor phase growth methods described above. For this reason, for example, this is an advantageous growth means for suppressing thermal diffusion of Mg used to form the well layer 5b according to the present invention into the barrier layer 5a.

  In the well layer 5b containing Mg as an acceptor impurity, the layer thickness is preferably 1 nm or more and 20 nm or less. The extremely thin well layer 5b of less than 1 nm lacks the two-dimensional continuity of the layer (film), and as a result, the operating current flows to the light emitting element, particularly in the horizontal (lateral) direction. Such an electrical resistance increases or the light emitting region decreases, which is disadvantageous. On the other hand, even if a thick film exceeding 20 nm is used as the well layer 5b, it does not sufficiently form many quantum levels having different energy levels, and therefore the wavelength based on the transition between various quantum levels is not achieved. There is an inconvenience that a large amount of light emission with different values cannot be obtained.

In addition, since the MBE method can generally grow a group III nitride semiconductor layer in a vacuum environment not containing hydrogen, for example, a low-resistance p-type Ga containing a large amount of electrically activated (acceptor) Mg. There is an advantage that an _X In _1-X N (0 ≦ X ≦ 1) layer or the like can be easily formed. For example, according to the MBE method using nitrogen (N ₂ ) plasma as a nitrogen source, the Mg concentration in the layer is 1.5 × 10 ¹⁹ cm ⁻³ and the carrier concentration is 8.0 × 10 ¹⁸ cm. ^-3 , a low resistance p-type GaN layer can be formed. Therefore, the electrical activation rate of Mg (for convenience, the carrier concentration is expressed by the value obtained by dividing the atomic concentration of Mg (percentage value)) is 53% in the as-grown state. As in this example, according to the MBE method, unlike the Mg-doped GaN layer grown by the MOCVD method, the p-type Ga _X having an electrical activity of 50% or more without requiring dehydrogenation treatment from the same layer. There is an advantage that an In _1-X N (0 ≦ X ≦ 1) layer or the like can be easily formed.

To construct a multiple quantum well structure with a pair of structural units composed of a junction structure of one well layer 5b containing an acceptor impurity such as Mg and one barrier layer 5a having the same conductivity type as the well layer 5b. The logarithm of the structural units constituting the multiple quantum well structure is preferably 3 pairs or more and 40 pairs or less. Even if the well layer 5b according to the present invention is a single layer, it is possible to emit multi-wavelength light. However, in order to obtain light emission with more excellent color rendering, the number of pairs is preferably 4 or more. For example, a well layer 5b made of Mg-doped n-type Ga _0.85 In _0.15 N mixed crystal grown by the MBE method and 30 pairs of GaN barrier layers 5a also grown by the MBE method (one barrier layer 5a and one barrier layer 5a) FIG. 2 shows an example of the photoluminescence (abbreviation: PL) spectrum of the light emission layer 5 having a multiple quantum well structure formed by combining the junction with the well layer 5b. The thickness of the well layer 5b forming this multiple quantum well structure is 4 nm, and the thickness of the barrier layer 5a is 10 nm.

As shown in the photoluminescence spectrum illustrated in FIG. 2, from the light emitting layer 5 having a multiple quantum well structure including the well layer 5b containing the acceptor impurity according to the present invention, 400 nm (4000 angstrom) or more and 500 nm (5000 angstrom) or less. The three light emissions having different wavelengths in the wavelength range are emitted (represented by symbols λ ₂ to λ ₄ in FIG. 2). Apart from the emission corresponding to the band edge emission (indicated by the symbol λ _B in FIG. 2), the wavelength is different in the wavelength range of the emission at the band edge (in this example, 365 nm) to 650 nm or less. A total of six emitted lights (represented by symbols λ ₁ to λ ₆ in FIG. 2) can be emitted.

In addition, the wavelengths of adjacent light emission (for example, λ ₁ and λ ₂ , λ ₃ and λ _4, etc.) in a plurality of light emission (λ _{1 to} λ ₆ ) having a wavelength different from the band edge light emission (λ _B ). The difference in light emission is 17.5 nm between the light emission on the short wavelength side, for example, between the light emission of λ ₁ and λ ₂ , but the wavelength difference between the light emission gradually increases as the light emission wavelength becomes longer. The characteristic is that the light emission between λ ₅ and λ ₆ is 55.5 nm. The mode of appearance of this multi-wavelength emission peak is, for example, the so-called shoulder peak generated in the “shoulder” portion of the main emission spectrum from the light emitting layer 5 doped with both Si and Mg formed by the MOCVD method. Is clearly different in appearance even in the wavelength interval between the emitted light. The reason why light emission with multiple wavelengths occurs even when the thickness of the well layer is constant is presumed to be due to the formation of various levels that cause radiative recombination due to the addition of the acceptor.

  When the light emitting layer 5 having the multiple quantum well structure is formed by using the well layer 5b according to the present invention which can emit light of multiple wavelengths at the same time, the light emitted from the light emitting layer 5 is externally transmitted from the surface side of the substrate 1. When the well layer 5b containing the acceptor impurity having a thinner layer thickness is arranged in the direction of taking out the light, it is convenient to obtain a white LED having excellent light emission extraction efficiency to the outside. The well layer 5b having a small layer thickness provides multi-wavelength light emission containing a large amount of short-wavelength light-emitting components. On the other hand, the well layer 5b having a large layer thickness provides multi-wavelength light emission containing a large amount of long-wavelength light-emitting components. The short wavelength light emission is absorbed by the well layer 5b resulting in the long wavelength light emission. For this reason, when the well layer 5b having a smaller thickness is disposed in the direction in which light emitted from the light emitting layer 5 is extracted to the outside from the surface side of the substrate 1, light emission from the well layer 5b located on the surface side of the substrate 1 This is because it is possible to suppress the absorption of water and is suitable for transmitting in the direction of the external visual field.

  When a multi-quantum well structure is formed using well layers 5b having different thicknesses, light emission having different wavelengths is emitted from each well layer 5b in accordance with the layer thickness, and the light emission is superimposed. Thus, a white LED having excellent color rendering properties can be provided. For example, a white LED having excellent color rendering can be formed even when the well layer 5b exhibiting multi-wavelength emission having a layer thickness suitable for mainly providing light in a red, green, or blue band is provided. A plurality of well layers 5b having the same layer thickness for emitting light in a band with low visibility are arranged, and a well layer 5b having a reduced thickness is sequentially arranged in the direction of external extraction of light emission above the well layer 5b. An example of forming a multiple quantum well structure of 5 is given.

Each well layer 5b that mainly emits light in a band of red, green, or blue is, for example, in the well layer 5b made of Ga _x In _1-x N (0 <x <1) mixed crystal, It can be formed with different indium compositions (1-X). However, in order to form the well layer 5b having a different In composition by a growth method such as MBE or MOCVD, it is necessary to change the growth temperature and the raw material supply ratio of Ga and In. For this reason, if compared with the technical means which controls the layer thickness of the well layer 5b simply by adjusting the growth time under the conditions of the same growth temperature and raw material supply ratio, a complicated operation is unavoidable.

In addition, the wavelengths of light emitted from the well layers 5b having different acceptor impurity atomic concentrations are different in accordance with the acceptor impurity atomic concentrations. Thereby, even when the thickness of the well layer 5b is constant, it is more convenient to control the wavelength range in which multi-wavelength light appears by changing the atomic concentration of the acceptor impurity contained in the well layer 5b. It becomes. For example, in the case of the Mg-doped n-type Ga _0.75 In _0.25 N well layer 5b, the concentration of Mg atoms inside the well layer 5b is 1 × 10 ¹⁹ atoms / cm ³ , 8 × 10 ¹⁸ atoms / cm ³ , and 2 When the multiple (triple) quantum well structure light emitting layer 5 is formed using the well layer 5b different from × 10 ¹⁸ atoms / cm ³ , multi-wavelength light emission should appear in the wavelength range of 400 nm to 600 nm. Can do.

  As described above, in the present invention, since the light emitting layer 5 has a multiple quantum well structure of the barrier layer 5a and the well layer 5b, a light emitting layer exhibiting multiple wavelengths can be easily formed with a simple structure, Since the laying area is substantially the same as the plane area of the light emitting layer 5, the luminous intensity can be increased. Moreover, since the light emitting layer 5 is single, it suffices to provide p-type and n-type electrodes corresponding to only the light emitting layer 5, compared to the case of RGB type white LED or complementary color type white LED, The area where the light emitting layer 5 is scraped off can be greatly reduced, and the light emission efficiency can be improved.

  In addition, since the well layer 5b is composed of a plurality of well layers 5b, 5b,... Having different layer thicknesses, multicolor light emission in which the wavelengths of the plurality of light emissions produced by the well layers 5b are different from each other is obtained. In addition, the color rendering property of white light emission can be stabilized at a high level, and white light can be obtained without using a fluorescent material, so that fine composition adjustment of the phosphor is not necessary.

  In addition, since the acceptor impurity is intentionally added to each of the well layers 5b, it is possible to construct the light emitting layer 5 that emits multicolor light having different wavelengths while being numerically single. Due to the characteristics, the color rendering property of white light emission can be stabilized to be high and constant, and since white light can be obtained without using a fluorescent material, fine composition adjustment of the phosphor becomes unnecessary.

  Furthermore, since the well layer 5b is composed of a layer having the same conductivity type as that of the barrier layer 5a, the formation of a pn junction with the barrier layer 5a can be avoided, and therefore, the multi-quantum having excellent conductivity. The light emitting layer 5 having a well structure can be formed.

  Further, the well layers 5b, 5b,... Made of a group III nitride semiconductor layer having a thinner layer thickness are arranged from the surface side of the substrate 1 in the direction in which the light emission from the light emitting layer 5 is extracted. Since the light emitting layer 5 is configured, the light emitted from the well layers 5b, 5b,... Constituting the multiple quantum well structure can be efficiently extracted in the viewing direction.

  In other words, in order to avoid absorption of short-wavelength light into a well layer that emits long-wavelength light, a quantum layer with a low quantum level is formed on the surface side of the substrate 1 with a wide well layer width. A multi-wavelength having a higher quantum level and a shorter wavelength light-emitting component formed by arranging a well layer 5b that emits multi-wavelength light including a light-emitting component at a wavelength and narrowing the well layer width in the light emission extraction direction The light emitting layer 5 having a multi-quantum well structure is formed by arranging the well layer 5b that causes the light emission. Under this configuration, light having a short wavelength does not pass through the well layer 5b that emits light having a longer wavelength. For this reason, light emitted from the well layer 5b disposed on the substrate surface side can be extracted in the external visual field direction without being absorbed by the well layer 5b disposed in the light extraction direction. Light emitted from the well layer 5b can be efficiently extracted in the viewing direction. Further, the color rendering properties can be improved, and a high-intensity white LED can be realized.

  In addition, according to the present invention, the light emitting layer 5 having a multiple quantum well structure is configured by using a plurality of well layers 5b having different atomic concentrations of the added acceptor impurities and exhibiting a plurality of light emission having different wavelengths even independently. Therefore, the light emitting layer 5 exhibiting multi-wavelength light emission in which the light emission from each well layer 5b is superimposed is obtained. For example, the so-called white light is obtained by mixing the light emission of two different wavelengths having a complementary color relationship. Compared with the complementary color type white LED, it is possible to provide a white LED which is more excellent in color rendering.

  Hereinafter, examples of the group III nitride semiconductor light emitting device of the present invention will be described with reference to the drawings.

  First Example FIG. 3 is a schematic cross-sectional view showing the structure of a group III nitride semiconductor light emitting device including a light emitting layer having a multiple quantum well structure according to a first example. FIG. 4 shows a photoluminescence spectrum emitted from the light emitting layer having the multiple quantum well structure.

  In forming the structure for producing the group III nitride semiconductor light emitting device 10, {111} silicon single crystal (silicon) was used as the substrate 101.

  The surface of the substrate 101 was cleaned using an inorganic acid, transferred to a growth chamber of a molecular beam epitaxial (MBE) growth apparatus, and the inside of the growth chamber was evacuated to an ultrahigh vacuum. Thereafter, while maintaining the degree of vacuum in the growth chamber, the temperature of the substrate 101 was raised to 780 ° C., and the substrate 101 was continuously heated until the surface 101a of the substrate 101 exhibited a (7 × 7) structure reconstruction.

On the surface 101a of the substrate 101 cleaned so as to exhibit a (7 × 7) structure reconstruction, undoped nitridation is performed by MBE growth method (nitrogen plasma MBE method) using nitrogen that has been converted to plasma as a nitrogen source. An aluminum (AlN) layer 102 (layer thickness = 60 nm) was formed. On the AlN layer 102, an undoped aluminum nitride / gallium mixed crystal (Al _x Ga _1-x N) layer 103 (layer thickness = 300 nm) was deposited by nitrogen plasma MBE. The aluminum (Al) composition ratio (X) of the Al _x Ga _1-x N layer forming the mixed crystal layer 103 is 0.25 from the bonding surface with the lower AlN layer 102 toward the surface of the mixed crystal layer 103. From 0 to 0 (zero) continuously.

A silicon (Si) -doped n-type GaN layer 104 (layer thickness = 1200 nm) was deposited on the Al _x Ga _1-x N layer 103 by nitrogen plasma MBE. The carrier concentration was 8 × 10 ¹⁸ cm ⁻³ .

On the n-type GaN layer 104, an n-type GaN layer 105 a (layer thickness = 10 nm) serving as a barrier layer having a multiple quantum well structure was deposited by nitrogen plasma MBE at a temperature of the substrate 101 of 540 ° C. Next, a well layer made of an n-type gallium nitride / indium mixed crystal (Ga _0.99 In _0.01 N) containing magnesium (Mg) is bonded to the n-type GaN barrier layer 105a at 540 ° C. by a nitrogen plasma MBE method. (Layer thickness = 2 nm) 105b was provided. A light emitting layer 105 having a multi-quantum well structure that exhibits n-type conduction as a whole by stacking four pairs (four pairs) of a pair of structural units including the n-type barrier layer 105a and the n-type well layer 105b. Formed. According to general secondary ion mass spectrometry, the atomic concentration of Mg contained in the well layer was 4 × 10 ¹⁷ atoms / cm ³ .

Photo at room temperature obtained from the light emitting layer 105 having the multiple quantum well structure comprising the barrier layer 105a and the well layer 105b grown in a high vacuum environment of about 10 ⁻⁶ Pascal (Pa) substantially free of hydrogen. The luminescence spectrum is shown in FIG. Even in a single light emitting layer, the emission peak wavelengths and the intensities at the wavelengths are summarized in Table 1 in order to clearly show that a large number of light emissions having different wavelengths are emitted.

  Even in a single light emitting layer, a total of seven light emissions are emitted in the wavelength range longer than the emission wavelength at the band edge (wavelength = 366.5 nm) and shorter than the wavelength of 550 nm. Has been. The difference in wavelength between adjacent emission peaks was 6 nm or more and 90 nm or less. The longer the emission wavelength, the wider the interval (wavelength difference) between adjacent emission peaks. In addition, even if the thickness of the well layer is constant and the atomic concentration of the acceptor is constant, multi-wavelength light emission is caused by the well layer in a high vacuum environment that does not contain hydrogen at all. Due to the formation, a large amount of electrically active Mg can be present in the well layer, and this electrically active Mg. This is probably because many levels that can contribute to many radiative recombination were formed.

An Mg-doped p-type GaN layer 106 (layer thickness = 100 nm) is provided on the Ga _0.80 In _0.20 N well layer 105b which forms the final end (outermost layer) of the light emitting layer 105 having a multiple quantum well structure by nitrogen plasma MBE. This completes the formation of the structure. The atomic concentration of Mg inside the p-type GaN layer 106 was 1 × 10 ¹⁹ cm ⁻³ , and the carrier concentration of the layer 106 was 8 × 10 ¹⁸ cm ⁻³ . That is, the electrical activation rate was 80%.

  A region for forming the n-type ohmic electrode was removed by a general dry etching method to form an n-type ohmic electrode 107. A p-type ohmic electrode 108 was formed on the surface of the p-type GaN layer 106, and a square light-emitting element (LED) 10 having a side length of 350 μm was produced.

  The forward voltage (Vf) when the forward current of the light emitting element (LED) 10 was 20 mA was 3.5V. Further, when a current of 50 mA was passed in the forward direction, white light emission with a green color was emitted from the entire surface of the light emitting layer of the LED 10 in a chip state. When the color rendering property of light emission when a forward current of 50 mA is passed is expressed by the coordinate values on the chromaticity diagram, the x coordinate value is 0.26 and the y coordinate value is 0.38. It was 0.36.

  Second Example FIG. 5 is a cross-sectional view schematically showing a configuration of a light emitting layer having a multiple quantum well structure of a group III nitride semiconductor light emitting device (LED) of a second example.

  Nitrogen plasma MBE is formed on a laminated structure comprising an AlN layer, an AlGaN mixed crystal layer, and an n-type GaN layer (reference numeral “204” in FIG. 5) provided on the Si substrate described in the first embodiment. By the method, the light emitting layer 205 having the multiple quantum well structure shown in FIG. 5 was formed as described below.

In forming the light emitting layer 205 having a multiple quantum well structure, the n-type GaN layer 204 was first provided with an n-type GaN barrier layer 205a having a layer thickness of 16 nm by nitrogen plasma MBE. Next, an Mg-doped Ga _0.80 In _0.20 N well layer was provided as an n-type well layer 205b having a multiple quantum well structure bonded to the barrier layer 205a. A pair of structural units composed of the n-type barrier layer 205a and the n-type well layer 205b (10 pairs) are stacked to form a light emitting layer 305 having a multiple quantum well structure that exhibits n-type conduction as a whole. .

The layer thickness of ten well layers 205b forming a multiple quantum well structure formed by stacking 10 pairs of structural units was decreased in the stacking direction from the n-type GaN layer 204 side toward the surface of the multiple quantum well structure. In this embodiment, the stacking direction and the light emission direction of the light emitting element (LED) are the same direction. The thickness of the well layer 205b is 12 nm at the bottom well layer of the multiple quantum well structure, the layer thickness of the next well layer is 11 nm, and the layer thickness of the next well layer is 10 nm. The thickness was decreased by 1 nm toward the outermost layer side of the quantum well structure, and the thickness of the outermost well layer was 3 nm (see FIG. 5). Although the thickness of each well layer 205b was changed, Mg was doped in each well layer 205b so that the atomic concentration was substantially constant at 6 × 10 ¹⁷ atoms / cm ³ .

On the Mg-doped Ga _0.80 In _0.20 N well layer 205b (layer thickness = 3 nm) which is the outermost layer of the light emitting layer 205 having a multiple quantum well structure, a Mg-doped p-type Al film having a layer thickness of 10 nm is formed by nitrogen plasma MBE method. _{A 0.03} Ga _0.97 N layer was deposited to complete the formation of the laminated structure for light emitting device (LED) use.

  FIG. 6 shows a photoluminescence spectrum at room temperature obtained from the stacked structure including the light emitting layer 205 having the multiple quantum well structure. FIG. 6 shows a spectrum as a result of superimposing the multi-wavelength light emitting components from the respective well layers 205b having different layer thicknesses. A total of 10 emissions were emitted over a wide wavelength range from 400 nm to 800 nm. The difference in wavelength between adjacent light emissions was 17.5 nm to 78.0 nm, and the interval between the wavelengths increased as the emission wavelength became longer. In addition, the color of light emitted from the laminated structure that was visually recognized when irradiated with helium-cadmium (He—Cd) laser light (wavelength = 325 nm) as excitation light was white.

In the same manner as described in the first example, the region for forming the n-type ohmic electrode was removed by a general dry etching method to form the n-type ohmic electrode. A p-type ohmic electrode was formed on the surface of the p-type Al _0.03 Ga _0.97 N layer to produce a light-emitting element (LED).

  The forward voltage (Vf) when the forward current of the light emitting element (LED) was 20 mA was 3.4V. Further, when a current of 20 mA was passed in the forward direction, white light emission was emitted visually from the LED in the chip state.

  Third Example FIG. 7 is a schematic cross-sectional view showing the structure of a group III nitride semiconductor light emitting device including a light emitting layer having a multiple quantum well structure according to a third example. FIG. 8 is a photoluminescence spectrum of a laminated structure for a group III nitride semiconductor light emitting device (LED) provided with a light emitting layer having a multiple quantum well structure according to the third embodiment.

  On the laminated structure comprising the AlN layer and the AlGaN mixed crystal layer (reference numeral “303” in FIG. 7) provided on the Si substrate described in the first and second embodiments, a nitrogen plasma MBE method is used. A light emitting layer having a multiple quantum well structure was formed as described below.

In forming a light emitting layer having a multiple quantum well structure, an AlGaN mixed crystal layer 303 described in the first and second embodiments is first formed into an n-type GaN barrier having a layer thickness of 10 nm by nitrogen plasma MBE. Layer 305a was provided. Next, an Mg-doped n-type Ga _0.75 In _0.25 N well layer 305b having a layer thickness of 3 nm was provided to be joined to the barrier layer 305a. A pair of structural units composed of the n-type barrier layer 305a and the n-type well layer 305b is stacked to form a light emitting layer 305 having a multiple quantum well structure that exhibits n-type electrical conduction as a whole. did.

The atomic concentration of Mg inside the five well layers 305b, 305b,... Formed of a multi-quantum well structure formed by stacking five pairs of structural units is determined from the AlGaN mixed crystal layer 303 side in the stacking direction (the emission extraction direction and Decreased in the same direction). The atomic concentration of Mg inside the well layer 305b is 1 × 10 ¹⁹ atoms / cm ^{3 in} the bottom well layer of the multiple quantum well structure, and 8 × 10 ¹⁸ atoms / cm ^{3 in} the well layer above it. The atomic concentration of Mg was sequentially decreased to 6 × 10 ¹⁸ atoms / cm ³ , 4 × 10 ¹⁸ atoms / cm ³ , and 2 × 10 ¹⁸ atoms / cm ³ . Thus, the light emitting layer 305 having a multiple quantum well structure including five well layers 305b having different Mg atomic concentrations while maintaining a constant layer thickness was formed.

On the Mg-doped GaN well layer (Mg atom concentration = 2 × 10 ¹⁸ atoms / cm ³ ), which is the outermost layer of the light-emitting layer 305 having a multiple quantum well structure, Mg-doped to a layer thickness of 10 nm by nitrogen plasma MBE method A p-type GaN layer 306 was deposited to complete the formation of a laminated structure for a light emitting device (LED).

  A photoluminescence spectrum at room temperature obtained from the stacked structure including the light emitting layer 305 having the multiple quantum well structure is shown in FIG. FIG. 8 shows a spectrum formed by superimposing multi-wavelength light emitting components from the well layers 305b having different layer thicknesses and different Mg atom concentrations. In the wavelength range from 400 nm to 600 nm, a total of 6 luminescences with emission peak wavelengths of 402.5 nm, 429.0 nm, 458.0 nm, 493.0 nm, 538.0 nm, and 593.0 nm were confirmed. In the above-described light emission that appeared in the wavelength range from 400 nm to 600 nm, the wavelength difference between adjacent light emissions is 26.5 nm to 55.0 nm, and the wavelength interval increases as the emission wavelength becomes longer. It was spreading. Moreover, the emission color from the laminated structure visually recognized when helium-cadmium (He—Cd) laser light (wavelength = 325 nm) was irradiated as excitation light was bluish white.

  FIG. 9 is a cross-sectional plan view of a light emitting device (LED) manufactured using the laminated structure of FIG. The p-type GaN layer 306 and the light emitting layer 305 having a multiple quantum well structure in the region 307a for forming the n-type ohmic electrode 307 are removed by a general dry etching method, The surface of the n-type AlGaN mixed crystal layer 303 was exposed. Thereafter, an n-type ohmic electrode 307 was formed on the surface of the n-type AlGaN mixed crystal layer 303 exposed in the region 307a, as shown in FIG. On the surface of the p-type GaN layer 306, a p-type ohmic electrode 308 having a planar lattice shape patterned using a general photolithography technique was formed. The p-type ohmic electrode 308 having a width of 4 μm arranged in a lattice shape is made of a platinum (Pt) -based metal that makes ohmic contact with the p-type GaN layer 306. Further, a pedestal (pad) electrode 309 for connection (bonding) is provided at one end on the surface of the p-type GaN layer 306 so as to be electrically connected to the lattice-shaped p-type ohmic electrode 308, and a light-emitting element (LED ) 30 was produced.

  The forward voltage (Vf) when the forward current of the light emitting element (LED) was 20 mA was 3.4V. Further, when a current of 20 mA was passed in the forward direction, white light emission was emitted visually from a square LED chip having a side length of 350 μm.

It is a schematic diagram which shows roughly the cross-sectional structure of the group III nitride semiconductor light-emitting device of this invention. It is an example of the multiwavelength emission spectrum from the multiple quantum well structure light emitting layer which concerns on this invention. It is a cross-sectional schematic diagram of LED which concerns on 1st Example. It is the spectrum of the multiwavelength emission from the laminated structure as described in 1st Example. It is a cross-sectional schematic diagram of the multiple quantum well structure light emitting layer as described in 2nd Example. It is the spectrum of the multiwavelength emission from the laminated structure as described in 2nd Example. It is a cross-sectional schematic diagram of the multiple quantum well structure light emitting layer as described in 3rd Example. It is the spectrum of the multiwavelength emission from the laminated structure as described in 3rd Example. It is a plane schematic diagram of LED which concerns on 3rd Example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate 5 Light emitting layer of multiple quantum well structure 5a Barrier layer 5b Well layer 10 Group III nitride semiconductor light emitting device 101 Substrate 101a Surface 102 of substrate Aluminum nitride layer 103 Aluminum nitride / gallium mixed crystal layer 104 n-type GaN layer 105 Light emitting layer 105a barrier layer 105b well layer 106 p-type GaN layer 107 n-type ohmic electrode 108 p-type ohmic electrode 204 n-type GaN layer 205 light-emitting layer 205a barrier layer 205b well layer 303 aluminum nitride / gallium mixed crystal layer 305 light-emitting layer 305a barrier layer 305b Well layer 306 p-type GaN layer 307 n-type ohmic electrode 307a Region for forming n-type ohmic electrode 308 p-type ohmic electrode 309 Base electrode

Claims (35)

In a group III nitride semiconductor layer forming one or a plurality of well layers constituting a light emitting layer having a multiple quantum well structure provided on a surface of a substrate,
In addition to the band edge emission, an n-type gallium indium nitride (compositional formula Ga _x In _{1− X} N: 0 <X <1),
The gallium nitride indium has an indium composition (1-X) of 0.01 or more and 0.25 or less, and magnesium (Mg) as an acceptor impurity is 4 × 10 ¹⁷ cm ⁻³ or more and 1 × 10 ¹⁹ cm ^−. Including at an atomic concentration of ³ or less,
A group III nitride semiconductor layer characterized by the above. In a light emitting layer having a multiple quantum well structure including one or a plurality of well layers provided on a surface of a substrate,
The well layer is a group III nitride semiconductor layer according to claim 1,
The light emitting layer emits a plurality of light emission having different wavelengths depending on the level formed by magnesium contained in the well layer.
A light emitting layer characterized by that.   The said light emitting layer is a light emitting layer of Claim 2 which radiate | emits several light emission from which a wavelength differs in the range of 400 nm or more and 800 nm or less.   The light emitting layer according to claim 3, wherein the light emitting layer emits light having a total of 10 different wavelengths.   The said light emitting layer is a light emitting layer of Claim 2 which radiate | emits several light emission from which a wavelength differs in the range of 365 nm or more and 650 nm or less.   The light emitting layer according to claim 5, wherein the light emitting layer emits light having a total of six different wavelengths.   The said light emitting layer is a light emitting layer of Claim 2 which radiate | emits several light emission from which a wavelength differs in the range of 400 nm or more and 600 nm or less.   The said light emitting layer is a light emitting layer of Claim 2 which radiate | emits the some light emission from which a wavelength differs in the range of 366.5 nm or more and 550 nm or less.   The light emitting layer according to claim 8, wherein the light emitting layer emits light having a total of seven different wavelengths.   The said light emitting layer is a light emitting layer of Claim 2 which radiate | emits several light emission from which a wavelength differs in the range of 400 nm or more and 500 nm or less.   The light emitting layer according to claim 10, wherein the light emitting layer emits light having a total of three different wavelengths.   The light emitting layer according to any one of claims 2 to 11, wherein the light emitted from the light emitting layer has a larger wavelength difference from the nearest light emission as the light emission wavelength is longer.   The light emitting layer according to claim 12, wherein the wavelength difference between the adjacent light emission is 6 nm or more and 90 nm or less.   The light emitting layer according to claim 13, wherein the longer the wavelength of light emission, the lower the intensity of light emission.   The light emitting layer according to claim 12, wherein the wavelength difference between the adjacent light emission is 17.5 nm or more and 78.0 nm or less.   The light emitting layer according to claim 12, wherein a difference in wavelength from the most adjacent light emission is 26.5 nm or more and 55.0 nm or less. In a group III nitride semiconductor light-emitting device provided with a light-emitting layer having a multiple quantum well structure including one or a plurality of well layers provided on the surface of a substrate,
The well layer is a group III nitride semiconductor layer according to claim 1,
The light emitting layer emits a plurality of light emissions having different wavelengths, depending on the level formed by magnesium contained in the well layer.
A group III nitride semiconductor light emitting device characterized by the above.   The group III nitride semiconductor light-emitting device according to claim 17, wherein the number of the well layers is 3 or more and 40 or less.   The group III nitride semiconductor light-emitting element according to claim 17 or 18, wherein the light-emitting layer emits a plurality of lights having different wavelengths in a range of 400 nm to 800 nm.   The group III nitride semiconductor light-emitting device according to claim 19, wherein the light-emitting layer emits light having a total of 10 different wavelengths.   19. The group III nitride semiconductor light-emitting element according to claim 17, wherein the light-emitting layer emits a plurality of lights having different wavelengths in a range of 365 nm to 650 nm.   The group III nitride semiconductor light-emitting device according to claim 21, wherein the light-emitting layer emits light having a total of six different wavelengths.   The group III nitride semiconductor light-emitting element according to claim 17 or 18, wherein the light-emitting layer emits a plurality of lights having different wavelengths in a range of 400 nm to 600 nm.   19. The group III nitride semiconductor light-emitting element according to claim 17, wherein the light-emitting layer emits a plurality of lights having different wavelengths in a range of 366.5 nm to 550 nm.   The group III nitride semiconductor light emitting device according to claim 24, wherein the light emitting layer emits light having a total of seven different wavelengths.   The group III nitride semiconductor light-emitting element according to claim 17 or 18, wherein the light-emitting layer emits a plurality of lights having different wavelengths in a range of 400 nm to 500 nm.   27. The group III nitride semiconductor light emitting device according to claim 26, wherein the light emitting layer emits light having a total of three different wavelengths.   28. The group III nitride semiconductor light-emitting element according to any one of claims 17 to 27, wherein the light emitted from the light-emitting layer has a larger wavelength difference from the nearest light emission as the emission wavelength is longer.   29. The group III nitride semiconductor light-emitting device according to claim 28, wherein a wavelength difference between the adjacent light emission is 6 nm or more and 90 nm or less.   30. The group III nitride semiconductor light-emitting device according to claim 29, wherein the longer the wavelength of light emission, the lower the intensity of light emission.   29. The group III nitride semiconductor light-emitting device according to claim 28, wherein a wavelength difference between the adjacent light emission is 17.5 nm or more and 78.0 nm or less.   29. The group III nitride semiconductor light-emitting device according to claim 28, wherein a wavelength difference between the adjacent light emission is 26.5 nm or more and 55.0 nm or less. Above the well layer, p-type gallium nitride indium added with as-grown as-grown electrical activation rate of 50% or more (composition formula Ga _x In _{1 -x} N: 0 ≦ The group III nitride semiconductor light-emitting device according to any one of claims 17 to 32, wherein a layer X ≦ 1) is provided.   34. Group III nitride according to claim 33, characterized in that it is provided with a gallium nitride (GaN) layer to which magnesium is added with an as-grown electrical activation rate of 80%. Semiconductor light emitting device.   35. The group III nitride semiconductor light-emitting device according to claim 34, which emits greenish white light.

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