JP2009084651A - Component for vacuum film deposition system, and vacuum film deposition system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a component for a vacuum film deposition system where the peeling and dropping of a film deposition material stuck to a system composing component during a film deposition stage are stably and effectively prevented, thus the reduction of the productivity of a film product and the increase of film deposition cost accompanying the cleaning of a film deposition system and the frequent exchange of the composing component are suppressed, and further, the generation of fine particles is suppressed. <P>SOLUTION: In the component for a vacuum film deposition system composing a vacuum film deposition system where a thin film deposition material evaporated in a vacuum vessel is vapor-deposited on a substrate, so as to deposit a thin film, the surface roughness of the component 1 for a vacuum film deposition system is ≤5 μm by the arithmetic average roughness Ra. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a vacuum film forming apparatus component used in a vacuum film forming apparatus such as a sputtering apparatus or a chemical vapor deposition (CVD) apparatus, and a vacuum film forming apparatus using the same, and in particular, a component constituting the vacuum film forming apparatus. It is easy to manage the operation because the film forming material attached to the film can be prevented from peeling and dropping for a long period of time, and it is possible to form a high-quality film with few falling pieces (particles) mixed in the film. The present invention relates to a component for a vacuum film forming apparatus and a vacuum film forming apparatus using the same.

  In electronic parts such as semiconductor parts and liquid crystal parts, various fine wiring films, electrode films, and the like are formed by using film forming methods such as sputtering and CVD. Specifically, various metal thin films and metal compound thin films are formed on a deposition target substrate such as a semiconductor substrate or a glass substrate by depositing a film forming material by applying a sputtering method or a CVD method. . Each of these thin films is used as a wiring layer, an electrode layer, a barrier layer, a base layer (liner material), and the like.

  By the way, in the vacuum film forming apparatus such as the sputtering apparatus and the CVD apparatus used for forming the metal thin film and the metal compound thin film described above, the film is also formed on various components arranged in the film forming apparatus during the film forming process. It is inevitable that the material adheres and accumulates. The film-forming material (adhered matter) deposited and deposited on the component parts in this way causes generation of particles by peeling and dropping from the parts over time during the film-forming process. When dust called particles is mixed on the film formation substrate, it causes wiring defects such as short circuit and open (disconnection) after the wiring is formed, and the normal operation of electronic devices is hindered and the yield of electronic products is increased. It will cause a decline.

  In view of such problems, in a conventional sputtering apparatus or the like, a thermal expansion difference is formed by forming a film of a target material or a material having a coefficient of thermal expansion close to that on the surface of an apparatus component such as a deposition plate or a target fixing part. It has been practiced to prevent exfoliation of adhering deposits due to (see, for example, Patent Documents 1 and 2). Various proposals have also been made regarding a method for forming a coating on the surface of a component, and in particular, a thermal spraying method having excellent adhesion to a component body and adhesion of a film forming material has been widely applied. The current situation is that such a coating on the surface of the component prevents the film forming material (adhered material) adhering and depositing on the device component from being peeled off or dropped off.

  Certainly, a particle reduction effect to some extent is obtained even by the conventional anti-peeling measures for deposits formed with the above-described film. However, for example, when a metal thin film or a compound thin film is formed using Ti as a film forming material and an attempt is made to extend the service life by increasing the use efficiency, the amount of the deposited film deposited on the thermal spray coating increases, resulting in an adhesion film. The film projections due to the surface irregularities of the thermal spray coating are formed, and a form in which very fine particles are unstablely deposited around the film projections is exposed on the surface. Tend to cause outbreaks. In particular, in the portion where the sputtered particles are deposited from an oblique direction, the unevenness of the sprayed coating makes the formation of film protrusions remarkable, so that particles are likely to be generated. Therefore, as the deposited film becomes thicker, the film protrusions grow larger and promote the generation of particles, and the internal stress of the film increases, and the stress concentrates on the protrusion step part of the sprayed film due to the film stress applied to the sprayed film. As a result, cracks are generated and the amount of generated particles increases, and the thermal spray coating peels off along with the deposited film, so there is a situation where cleaning and replacement are necessary and the life of equipment parts cannot be extended. .

  On the other hand, blasting is generally used to adjust the surface properties of parts other than sprayed coatings and surfaces other than the sprayed surface. Moreover, the surface property of the component is adjusted even in a sputtering apparatus such as an Al sputtering apparatus in which the sputtered film is made of Al and is very soft and there is little fear of film peeling without using a sprayed coating. For this reason, blasting is generally used.

  However, in the above blast treatment, alumina abrasive grains that are generally hard and have an acute angle portion are used as the blasting material. Therefore, if the abrasive grains collide with the component at a high speed, they remain on the component substrate formed of stainless steel or the like. Often causes problems. The remaining alumina abrasive grains have a very high resistance value, and when the sputtered film is deposited, electrons jump into the component, and a phenomenon in which the sputtered film grows abnormally easily occurs in the alumina remaining portion having a high resistance value. This abnormal growth trace is called a nodule, and this growth part is lost to form particles, which are mixed into the wafer, thereby causing a problem of reducing the yield of the film-formed product.

In addition, since the blast treatment destroys the surface of a base material such as stainless steel to form an uneven state, there is a problem that a surface crushed layer is exposed or a large number of damaged foreign substances adhere to the surface. It is difficult to completely remove such surface defects even if ultrasonic cleaning is performed. Further, when a sputtered film is deposited on the surface of such a defect, there is a problem that the deposited film easily peels off due to the surface defect. is there.
JP 2004-83960 A JP 2004-232016 A

  As described above, in the countermeasures for stable deposition of deposits and prevention of film peeling in the components of the conventional vacuum film deposition apparatus, when depositing the Ti film and TiN film, the film deposition material (deposits) deposited on the component surface ) And the film peeling cannot be sufficiently suppressed, and there is a problem that the generation of particles and the peeling of deposits occur in a relatively short period of time. When the amount of particles generated increases or the deposits are peeled off, it is necessary to clean the equipment and replace parts, which increases the maintenance and management work of the film forming equipment, resulting in a decrease in the productivity of film-using products and film formation. The cost will increase.

  Further, in recent semiconductor devices, the wiring width has been narrowed in order to achieve a high degree of integration, and for example, from 0.18 μm, 0.13 μm, and further to 0.09 μm or less. . In such a narrowed wiring or an element having the same, even if extremely fine particles (fine particles) having a diameter of, for example, about 0.2 μm are mixed, wiring defects or element defects are caused. Therefore, it is strongly desired to further suppress the generation of fine particles due to the device components.

  Specifically, in the conventional vacuum film forming apparatus component disclosed in Patent Document 2 (Japanese Patent Laid-Open No. 2004-232016), the wiring width is about 0.25 μm, so that the diameter is larger than 0.2 μm. In order to eliminate the influence of the particles, a rough sprayed coating having a surface roughness Ra of 30 μm or more and 80 μm or less was formed.

  However, along with the further high integration of semiconductor elements in recent years, ultrafine wiring having a wiring width of 0.13 μm or less has been put into practical use. In such an extremely fine wiring, it becomes a practical problem that fine particles having a diameter of less than 0.2 μm, which has not been noticed in the past, also cause wiring defects and element defects. Specifically, in order to prevent wiring defects and device defects, a conventional thermal spray coating having a surface roughness Ra of 30 μm or more and 80 μm or less despite the need to reduce particles having a diameter of 0.1 μm or more. There is a problem in that the generation of fine particles having a diameter of about 0.1 μm could not be sufficiently suppressed in the parts formed with.

  The present invention has been made to cope with such problems. For example, when a thin film for forming a barrier layer such as a Ti film and a TiN film is formed, it adheres to apparatus components during the film forming process. It prevents the film-forming material from being peeled and dropped stably and effectively, and suppresses the decrease in productivity of film products and the increase in film-forming cost caused by the cleaning of the film-forming equipment and frequent replacement of components. Components for vacuum film forming equipment that can suppress the generation of irrelevant particles, and further prevent particles from being mixed into the formed film, and work on highly integrated semiconductor elements, etc. An object of the present invention is to provide a vacuum film forming apparatus that can reduce the film forming cost by improving the rate.

  In order to achieve the above object, a vacuum film forming apparatus component according to the present invention comprises a vacuum film forming apparatus that forms a thin film by depositing a thin film forming material evaporated in a vacuum vessel on a substrate. In the apparatus part, the surface roughness of the vacuum film forming apparatus part is 5 μm or less in terms of arithmetic average roughness Ra.

  According to the vacuum film forming apparatus component, since the surface roughness of the component is 5 μm or less in terms of arithmetic average roughness Ra, the adhesion of the film forming material (adhered material) adhering to the surface of the component is excellent, and the film is formed. Since the film peeling of the material is effectively suppressed and the generation of particles is reduced, it is less likely to cause wiring defects and element defects, and the manufacturing yield of electronic components can be greatly improved. In addition, since film peeling of the film forming material is effectively suppressed over a long period of time, the frequency of cleaning the film forming apparatus and replacing component parts is reduced, and the operation management of the film forming apparatus becomes extremely easy. Product productivity can be increased, and film formation costs can be reduced.

  When the surface roughness of the part exceeds 5 μm, film protrusions due to the surface irregularities of the part are likely to be formed, and a form in which very fine particles are unstablely deposited around the film protrusions is exposed on the surface. However, the fine particles fall off due to the heat change caused by the plasma, and the generation of particles is likely to occur. Therefore, the surface roughness Ra of the component is specified to be 5 μm or less, but a range of 2 to 4 μm is more preferable.

  In the vacuum film forming apparatus component, it is preferable that the surface of the component has a plurality of dimples. Moreover, it is preferable that the average diameter of this hollow is 3-20 micrometers, and the average depth is the range of 1-5 micrometers. By controlling the shape and number of the recesses, the surface roughness of the parts can be adjusted to a predetermined range as appropriate. Further, as will be described later, the recess is preferably formed by plastic working the surface of the part.

  It is possible to adjust the surface roughness Ra of the sprayed coating to 5 μm or less within the range of the average diameter and the average depth of the dent.

  The average diameter and the average depth of the dent are measured as an average value by observing a cross-sectional structure photograph of the sprayed coating, arbitrarily selecting five adjacent dents, measuring their diameter and depth, and the like.

Further, when the vacuum film forming apparatus is for forming a film of Ti or a compound thereof, a particularly remarkable particle reduction effect is exhibited. Examples of the Ti compound include TiN (titanium nitride), and this TiN film is formed by a reactive sputtering method in which a Ti target is sputtered in a vacuum atmosphere of 1 Pa or less in which a predetermined amount of N ₂ gas is introduced as an atmospheric gas.

  Conventionally, in parts for vacuum film forming apparatuses to which Ti or a compound thereof adheres, the surface roughness Ra of the thermal spray coating is disclosed in Patent Document 2 with the intention of increasing adhesion of the adhering component by the anchor effect of the thermal spray coating and preventing peeling. As shown, it was specified to be 30 μm or more. However, according to the knowledge of the present inventors, the surface roughness Ra of the component is set to 5 μm or less without providing a thermal spray coating, particularly on the surface of the vacuum film forming device component for forming a Ti or TiN film. It has been found that a small adjustment is extremely effective as a measure for preventing the generation of particles.

  In the vacuum film forming apparatus component, it is preferable that a surface of the component is plastically processed. The surface roughness of the component can be adjusted within a predetermined range by polishing the surface of the component. However, in this case, fine irregularities, polishing marks and cavities are easily formed on the surface of the polishing process, and abnormally grown portions of the film forming material are likely to be formed starting from the irregularities, polishing marks and cavities. This abnormally grown portion tends to drop off from the surface of the component and easily cause generation of particles. Therefore, it is desirable to eliminate defects such as irregularities, polishing marks and cavities by plastic processing of the part surface.

  The plastic working method is preferably at least one of ball shot processing and dry ice processing. Ball shot processing (ball blasting) is a method in which round ball-shaped fine abrasive grains collide with the surface of a component together with a high-pressure fluid to treat the surface, leaving no abrasive grains on the component surface and damaging the component surface. A depression (dimple) can be formed without giving (crushed layer formation). The shape (diameter and depth) of the indentation can be adjusted by controlling processing conditions such as a ball diameter as an abrasive grain, an abrasive injection distance, an injection pressure, and a ball shot time.

  On the other hand, the dry ice treatment indicates a ball shot using a dry ice ball as a spraying abrasive. According to this dry ice treatment, even if a dry ice ball remains on the surface of the part, it volatilizes (sublimates) in a short time, so that there is no formation of irregularities and cavities due to the dry ice ball. There is no formation of an abnormally deposited portion that easily peels off.

  In particular, by combining the ball shot process and the dry ice process, it is possible to achieve both a long life of the component and a particle reduction effect. In particular, by using both the ball shot process and the dry ice process, it is possible to remove the fine irregularities remaining on the surface of the component in one process by the other process, which causes generation of fine particles. Since the defective portion can be eliminated, fine particles having a diameter of about 0.1 μm can be reduced.

  On the other hand, in the conventional blasting process, sharp abrasive grains having an acute angle portion collide with the part surface, so that the abrasive grains are likely to bite into the part surface, and a crushed layer is formed on the part surface. Easily scratched. Therefore, although the surface of the part can be roughened, many scratches remain, so it was impossible to eliminate the generation of minute particles.

  Further, in each of the vacuum film forming apparatus components described above, ions accelerated by the vacuum film forming apparatus collide with the thin film forming material to evaporate the material component and deposit the evaporated material component on the substrate. In the case of a vacuum film forming apparatus that forms a thin film, the thin film forming material deposited on the components for the vacuum film forming apparatus can continue the film forming process until the film is peeled off with a length of 2 mm or more. It is preferable that the service life of the vacuum film forming apparatus component, in which the time is represented by the accumulated sputtering power, is 500 kWh or more.

  If the service life of the vacuum film forming device component expressed in terms of the accumulated sputtering power is 500 kWh or longer, the time until film peeling occurs is prolonged and the time during which the film forming process can be continued is increased. The labor required for cleaning and replacement of parts is greatly reduced, the operation management of the film forming apparatus becomes extremely easy, the productivity of the film product can be increased, and the film forming cost can be reduced.

Furthermore, a vacuum film forming apparatus according to the present invention is characterized by using any one of the above-described parts for a vacuum film forming apparatus as a constituent material. In this vacuum film forming apparatus, when the thin film forming material is heated and evaporated by a resistance heating method, a high frequency heating method, or an electron beam heating method, the working pressure (vacuum degree) in the vacuum vessel is 1 × 10 ⁻² Pa or less. Adjusted. When the thin film forming material is evaporated by DC sputtering, high frequency sputtering, magnetron sputtering or the like, the working pressure (vacuum degree) in the vacuum vessel is set to about 1 × 10 ^{−2 to} 1 Pa. Further, for example, when a TiN film is formed by sputtering from a Ti target in a nitrogen atmosphere, a mixed gas of Ar 50% + N ₂ 50% is evacuated to 1 × 10 ⁻⁶ Torr or less in the vacuum chamber of the sputtering apparatus. About 5 × 10 ⁻³ Torr. (1 Torr = 1.33 × 10 ² Pa).

  When the vacuum film forming apparatus according to the present invention is a sputtering apparatus, the effect of reducing particles and prolonging the life of parts are particularly remarkable.

  In contrast to the present invention, conventionally, in order to prevent film peeling deposited on a component for a vacuum film forming apparatus, the surface of the sprayed coating formed on the component surface is made uneven as disclosed in Patent Document 2. In general, the surface roughness Ra of the thermal spray coating is controlled to 30 μm or more for the reason that the surface area is increased and the means for preventing the film peeling by using the anchor effect of the uneven portion is appropriate. Used as a coating.

  However, according to the knowledge of the present inventors, when the surface roughness of the sprayed coating is increased, the deposited film is deposited with the shape of the sprayed surface, so that film projections are formed due to the unevenness of the deposited film. In addition, unstable particles accumulate on the film projections, which in turn causes the generation of particles. Therefore, in order to reduce particles, the surface of the thermal spray coating needs to be as smooth as possible, and it has been found from various experimental results that the surface roughness of the thermal spray coating and its shape control are important factors.

  In parts with conventional thermal spray coating, the thermal spray coating melts materials such as powder and wire using electricity or combustion gas as a heat source, and uses the gas for dispersion such as Ar gas or compressed air. Therefore, when the molten particles are deposited on the coating, the sprayed surface roughness changes depending on the size of the molten particles. For this reason, when arc spraying using wire material or flame spraying is used, the wire diameter is constant, so even if the spraying conditions are selected, a sprayed film with a surface roughness of Ra 10 μm or less can be stably formed. It was difficult to do.

  In the present invention, for the first time, it has been found that by controlling the surface roughness Ra of a component to 5 μm or less, it has a remarkable effect in reducing particles and extending the life of the component without forming a sprayed coating. Furthermore, as a surface treatment after the roughness adjustment processing of the component surface, it has been found that post-treatment is effective in removing defects by a method that does not further cause contamination or smoothing the treated surface by a special method. . Then, it has been found that by adding the above-described surface roughness adjustment process and post-treatment, the generation of particles can be further greatly reduced, and the life of parts can be significantly extended.

  In this way, by controlling the surface form of the component, it is possible to stably deposit the deposits deposited on the component, and stably and effectively suppress the generation of particles and film peeling. Can do.

  Therefore, it is possible to effectively suppress the generation of particles induced from the deposits deposited on the components for the vacuum film forming apparatus and the peeling of the deposited film, and the cleaning frequency of the film forming apparatus and the number of parts replacement can be reduced. It can be greatly reduced. This reduction in the amount of generated particles greatly contributes to the improvement of the yield of various thin films formed by a vacuum film forming apparatus, as well as elements and components using the thin films. In addition, the reduction in the frequency of cleaning the film forming apparatus and the number of parts replacements have a great effect, such as greatly improving productivity and reducing film forming costs.

  As described above, according to the vacuum film forming apparatus component of the present invention, it is possible to stably and effectively prevent the film forming material adhering during the film forming process from being peeled off and to prevent the peeling preventing film itself. Stability can be increased. Therefore, the cleaning frequency of the film forming apparatus and the number of parts replacement can be reduced. Further, according to the vacuum film forming apparatus according to the present invention having such a component for a vacuum film forming apparatus, it becomes possible to suppress the mixing of particles into the film that causes the defect of the wiring film or the element. In addition, it is possible to improve film productivity and reduce film formation costs.

  Hereinafter, modes for carrying out the present invention will be described.

  In order to achieve a reduction in the number of particles and component replacement in the vacuum film forming apparatus, it is necessary to control the surface roughness of the surface of the component main body. In particular, in the case of a Ti / TiN film used for a diffusion barrier of an Al wiring film, in order to exert the above-described effects, the surface roughness is 5 μm or less, more preferably 2 to 4 μm, based on the arithmetic average roughness Ra. It is necessary to control within the range.

  As a specific method for obtaining the surface roughness of the component surface, a polishing method or the like is appropriately selected and used. It is preferable to control the final surface roughness to 5 μm or less by performing ball shot processing on the obtained part to plastically deform the part surface. In this ball shot process, the surface roughness and surface form of the component can be controlled by controlling the shot conditions such as the ball diameter, ball material, jet pressure, shot distance and shot angle.

  As mentioned above, ball surface treatment of the part surface and plastic processing of the surface part further increases the stress relaxation function, so that the life of the part can be increased and a part that satisfies particle reduction can be obtained. Was obtained as a new finding.

  In the obtained part, deposits such as scattered particles and polishing marks that are easily dropped off remain attached to the sprayed surface. Therefore, it is preferable to remove the deposits by dry eye screening. Here, the dry ice used as the abrasive grains volatilizes in a short time even if it remains on the surface of the component after collision, so that itself does not contaminate the surface of the component. Therefore, it is an effective means as a pre-process for controlling the shape of the component surface.

The dry eye screening treatment may be performed by directly spraying dry ice particles in the form of pellets having a diameter of several millimeters. It is possible to remove a defective portion such as a mark. At this time, if the gas pressure to be blown is 2 kg / cm ² or more, the effect of removing the defective portion is exhibited, but if the pressure is less than 2 kg / cm ² , the defective portion cannot be completely removed.

  If this dry eye screening process is not performed in advance, scattered particles with low adhesion to the part surface will be plastically deformed flat by ball shot and deposited on the part surface. There is a tendency that the film is easily peeled off. As a result, it becomes an obstacle to measures for improving the life of parts, and it is therefore appropriate to perform a dry eye screening process in advance before plastic working.

  In addition, the hard balls used in ball shot processing are spherical balls made of ordinary steel, stainless steel, or ceramic materials. Even when subjected to strong impact force due to injection, the balls themselves are used repeatedly without damage. Is possible. The ball diameter is preferably 1 mm or less. When it becomes coarse so as to exceed 1 mm, the collision of the ball does not reach the concave portion on the surface of the sprayed coating, and a portion where the sprayed form remains is generated, and the entire sprayed surface does not become a uniform form.

The spray pressure in the ball shot process may be any pressure that allows the ball to be sprayed with a uniform momentum, and specifically, 5 kg / cm ² or less is preferable. However, when the spray pressure exceeds 5 kg / cm ² , the part surface is extremely plastically deformed, making it difficult to obtain a desired surface roughness. On the other hand, if the spray pressure is excessively low, the ball will not be stably ejected, so the surface of the part will not be perfectly smooth, and the film will be in a non-uniform form with polishing marks remaining on the part surface. The nature will decline.

  Further, by further using a dry ice shot treatment after the ball shot treatment, the deposits remaining on the smoothed part surface are removed, and there is an effect that a surface on which no foreign matter remains can be formed, leading to further reduction of particles. Therefore, it becomes an effective means.

  By carrying out the annealing process for the purpose of the structure softening and degassing for the part thus obtained, the stress relaxation ability of the part can be further increased.

[Example]
Next, specific examples of the present invention will be described more specifically with reference to the accompanying drawings.

  FIG. 3 is a cross-sectional view showing a configuration of a sputtering apparatus which is an embodiment of a vacuum film forming apparatus using a vacuum film forming apparatus component according to the present invention. The sputtering apparatus 20 includes a sputtering target fixing plate 11 that fixes and holds the target 16, a ground shield 12, an upper deposition plate 13, a lower deposition plate 14, and a platen ring 15. A sputtering target 16 and a film formation material (wafer) 17 are arranged to face each other. The ground shield 12, the upper deposition plate 13, the lower deposition plate 14, and the platen ring 15 are used as components for a vacuum film forming apparatus.

  In this embodiment, a sputtering apparatus as a vacuum film forming apparatus will be described. However, the vacuum film forming apparatus component and the vacuum film forming apparatus of the present invention are not limited to a sputtering apparatus, but a vacuum evaporation apparatus (ion plating or laser). Ablation and the like), a CVD apparatus, and the like, and the same effects as the sputtering apparatus can be obtained.

[Examples 1 to 5]
A ground shield 12, an upper deposition plate 13, a lower deposition plate 14, and a platen ring 15 which are components (vacuum film deposition device components) of the sputtering apparatus 20 as shown in FIG. 3 were prepared as follows. That is, with respect to the earth shield 12, the upper deposition plate 13, the lower deposition plate 14 and the platen ring 15, which are all made of SUS304, the coarse adhesion adhered to the component body surface by blasting is removed. Each of the vacuum film forming apparatus parts 1 was prepared by performing the base treatment. Each vacuum deposition apparatus component 1 has a structure in which irregularities 3 are formed on the surface of a component body 2 as shown in FIG.

  Next, as shown in Table 1, the ball shot process is performed once for each part on which the unevenness 3 is formed as described above, or the ball shot process and the dry ice shot process are used twice or more. Or post-processing.

Here, in the ball shot process, as shown in FIG. 2, a stainless steel ball 4 having a diameter of 0.8 mm is injected from the injection nozzle 5 onto the surface of each component body ² at an injection pressure of 2 kg / cm ^2. Carried out. On the other hand, the dry ice shot treatment was performed by ejecting dry ice particles having a diameter of 0.3 mm from the ejection nozzle 5 at an ejection pressure of 4.5 kg / cm ² .

  By performing the ball shot process, the surface portion of each component 1 is deformed by plastic working, and a large number of recesses 6 having curved surfaces corresponding to the outer surface shape of the ball are formed as shown in FIG. The diameter D and depth d of the recess 6 were controlled by adjusting the shot conditions such as the ball diameter and the ejection pressure.

  On the other hand, by carrying out the dry ice shot process, it was possible to easily remove the deposits and protrusions remaining on the surface of the parts before the ball shot process and to perform almost complete cleaning.

Next, each part subjected to post-processing such as ball shot processing and dry ice shot processing as described above is subjected to heat treatment at a temperature of 350 ° C. for 3 hours in a vacuum atmosphere of 3 × 10 ⁻² Pa or less. The vacuum film forming apparatus component 1 for each example was prepared by carrying out the annealing and degassing. Further, each embodiment 1 as shown in FIG. 3 using the earth shield 12, the upper deposition plate 13, the lower deposition plate 14 and the platen ring 15 as the vacuum film forming apparatus component 1 for each embodiment described above. The vacuum film-forming apparatus 20 concerning ~ 5 was assembled.

[Comparative Examples 1-2]
On the other hand, as a comparative example for the present invention, the surface of each component body 2 made of the same material as that of the example is subjected to only the alumina blasting process without performing the ball shot process and the dry eye screening post-processing. A part having the surface roughness shown in 1 was prepared. Next, each component was heat-treated in a vacuum atmosphere of 3 × 10 ⁻² Pa or less at a temperature of 350 ° C. for 3 hours as an annealing and degassing treatment, whereby the vacuum formation according to each comparative example was performed. The membrane apparatus parts 1 were prepared, and furthermore, using these parts 1, vacuum film forming apparatuses according to Comparative Examples 1 and 2 as shown in FIG. 3 were assembled.

A Ti sputtering target 16 having a diameter of 127 mm was attached to the vacuum film forming apparatus according to each of the examples and comparative examples assembled in this manner, a sputtering pressure of 3 × 10 ⁻⁵ Pa, an Ar flow rate of 10 sccm (cm ³ / s), Magnetron sputtering was performed to form a Ti / TiN laminated thin film on an 8-inch wafer under N ₂ flow rate of 30 sccm.

The number of dusts having a diameter of 0.1 μm or more mixed on the surface of the 8-inch wafer was measured with a particle counter (WM-3). Moreover, the sputter | spatter integrated electric energy value (kwh) until film | membrane peeling with a length of 2 mm or more generate | occur | produced was measured, and it confirmed as the service life of each apparatus component. The measurement results are shown in Table 1 below.

  As is apparent from the results shown in Table 1, according to the magnetron sputtering apparatus as the vacuum film forming apparatus according to each example in which the surface roughness Ra of each component 1 is controlled to 5 μm or less, the surface roughness of the component 1 is It has been found that the amount of generated particles is greatly reduced as compared with the comparative examples in which the thickness Ra exceeds 5 μm. In addition, it was confirmed that the service life indicating the operation time until film peeling occurred in each component was also increased. From these results, it was confirmed that the generation of particles can be effectively and stably prevented by the component having the surface form formed in each example, and the service life of the component and the device itself can be extended.

  In particular, as shown in Examples 4 to 5, deposits remaining on the surface of the component immediately after the base treatment of the component or immediately after the ball shot operation by using two types of post-treatments such as ball shot treatment and dry ice shot treatment It was proved that the number of dusts such as particles mixed on the wafer can be further reduced because the deposits can be effectively removed and the deposits of abnormally grown deposits can be effectively prevented.

[Examples 6 to 8]
Next, in the sputtering apparatus as the vacuum film forming apparatus, when the sputtering output is changed and operated, the magnitude of the influence of the sputtering output on the generation amount of particles is confirmed with reference to the following examples and comparative examples.

  The surface of each component body 2 made of the same material (SUS304) as in Example 1 is subjected to ball shot processing under the same conditions as in Example 1, thereby having the surface roughness Ra and the indentation shape shown in Table 2. Parts 1 for vacuum film forming apparatuses according to Examples 6 to 8 were prepared. Further, these vacuum film forming apparatus components 1 are incorporated as an earth shield 12, an upper deposition plate 13, a lower deposition plate 14 and a platen ring 15 as shown in FIG. The membrane device 20 was assembled.

[Comparative Example 3]
On the other hand, the surface roughness Ra shown in Table 2 is obtained by performing only the alumina blast treatment on the surface of each component body 2 made of the same material (SUS304) as in Example 1 under the same conditions as in Comparative Example 1. The vacuum film forming apparatus parts according to Example 3 were prepared, and further, the vacuum film forming apparatuses according to Comparative Examples 3 were assembled using these vacuum film forming apparatus parts.

The Ti sputtering target 16 is mounted in the vacuum vessel of the vacuum film forming apparatus according to each of Examples 6 to 8 and Comparative Example 3 assembled as described above, and the sputtering pressure is 3 × 10 ⁻⁵ Pa. Magnetron sputtering was performed to form a Ti / TiN laminated thin film on an 8-inch wafer under the conditions of an Ar flow rate of 10 sccm (cm ³ / s) and an N ₂ flow rate of 30 sccm.

Then, the sputtering operation is continuously continued until the integrated power amount for sputtering output reaches 700 kWh. When the integrated power amount value shown in Table 2 is reached, the diameter of 0.1 μm mixed on the wafer surface is obtained. The increase in the number of dusts was measured with a particle counter (WM-3). The measurement results are shown in Table 2 below.

  As is clear from the results shown in Table 2, according to the sputtering apparatuses according to Examples 6 to 8 in which the surface roughness Ra is controlled to 5 μm or less by performing plastic working (ball shot) on the surface of each component. It has been found that particle generation can be effectively suppressed over a long period of time compared to Comparative Example 3 in which the surface roughness Ra of the thermal spray coating exceeds 5 μm. On the other hand, in the sputtering apparatus which concerns on the comparative example 3, the tendency for the particle generation amount to increase rapidly with progress of operation time has been confirmed.

  As described above, according to the vacuum film forming apparatus component according to the present embodiment and the vacuum film forming apparatus using the same, the surface roughness of the components of the vacuum film forming apparatus is adjusted to a predetermined range. Since the generation of particles due to peeling of the attached film attached to the components of the vacuum film forming apparatus can be effectively prevented, the manufacturing cost of the film forming product can be reduced and the manufacturing yield of the film product can be improved.

The fragmentary sectional view which shows the structure of the components for vacuum film-forming apparatuses concerning this invention. FIG. 6 is a partial cross-sectional view illustrating an operation of adjusting the surface properties of the vacuum film forming apparatus component according to the present invention by performing ball shot processing. Sectional drawing which shows the structural example of the vacuum film-forming apparatus using the components for vacuum film-forming apparatuses which concern on this invention.

1 Components for vacuum deposition equipment 2 Parts body (base material)
3 Concavity and convexity 4 Ball 5 Injection nozzle 6 Dimple
DESCRIPTION OF SYMBOLS 11 Sputtering target fixed plate 12 Ground shield 13 Upper deposition plate 14 Lower deposition plate 15 Platen ring 16 Sputtering target 17 Film-forming material (wafer)
20 Sputtering equipment (vacuum deposition equipment)

Claims (10)

In a vacuum film forming apparatus component constituting a vacuum film forming apparatus that forms a thin film by depositing a thin film forming material evaporated in a vacuum vessel on a substrate, the surface roughness of the vacuum film forming apparatus component is an arithmetic average. A component for a vacuum film-forming apparatus having a roughness Ra of 5 μm or less. The vacuum film forming apparatus component according to claim 1, wherein the vacuum film forming apparatus component has a plurality of depressions on a surface thereof. 3. The vacuum film forming apparatus component according to claim 2, wherein an average diameter of the recess is 3 to 20 [mu] m. 3. The vacuum film forming apparatus component according to claim 2, wherein an average depth of the recess is 1 to 5 μm. The vacuum film forming apparatus component according to claim 1 or 2, wherein the vacuum film forming apparatus is for forming a film of Ti or a compound thereof. 6. The vacuum film forming apparatus component according to claim 1, wherein a surface of the sprayed coating is plastically processed. The vacuum film forming apparatus component according to claim 6, wherein the plastic working is at least one of a ball shot process and a dry ice process. 8. The vacuum film forming apparatus component according to claim 1, wherein the vacuum film forming apparatus collides ions accelerated by the vacuum film forming apparatus with the thin film forming material to evaporate material components, and evaporates. In the case of a vacuum film forming apparatus that deposits the material components on the substrate to form a thin film, the film forming process continues until the thin film forming material deposited on the parts for the vacuum film forming apparatus causes film peeling. A component for a vacuum film-forming apparatus, wherein the service life of the component for a vacuum film-forming apparatus in which the amount of time during which the current can be continued is expressed by the amount of integrated sputtering power is 500 kWh or more. 9. A vacuum film forming apparatus comprising the vacuum film forming apparatus component according to claim 1 as a constituent material. 10. The vacuum film forming apparatus according to claim 9, wherein the vacuum film forming apparatus is a sputtering apparatus.

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