JP2009084129A5 - - Google Patents

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Publication number
JP2009084129A5
JP2009084129A5 JP2007258599A JP2007258599A JP2009084129A5 JP 2009084129 A5 JP2009084129 A5 JP 2009084129A5 JP 2007258599 A JP2007258599 A JP 2007258599A JP 2007258599 A JP2007258599 A JP 2007258599A JP 2009084129 A5 JP2009084129 A5 JP 2009084129A5
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JP
Japan
Prior art keywords
caco
dangerous
blowing
expensive
operate
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JP2007258599A
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English (en)
Japanese (ja)
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JP4997053B2 (ja
JP2009084129A (ja
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Priority to JP2007258599A priority Critical patent/JP4997053B2/ja
Priority claimed from JP2007258599A external-priority patent/JP4997053B2/ja
Publication of JP2009084129A publication Critical patent/JP2009084129A/ja
Publication of JP2009084129A5 publication Critical patent/JP2009084129A5/ja
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Publication of JP4997053B2 publication Critical patent/JP4997053B2/ja
Expired - Fee Related legal-status Critical Current
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JP2007258599A 2007-10-02 2007-10-02 高純度シリコンの製造方法 Expired - Fee Related JP4997053B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007258599A JP4997053B2 (ja) 2007-10-02 2007-10-02 高純度シリコンの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007258599A JP4997053B2 (ja) 2007-10-02 2007-10-02 高純度シリコンの製造方法

Publications (3)

Publication Number Publication Date
JP2009084129A JP2009084129A (ja) 2009-04-23
JP2009084129A5 true JP2009084129A5 (enExample) 2010-07-29
JP4997053B2 JP4997053B2 (ja) 2012-08-08

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ID=40658026

Family Applications (1)

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JP2007258599A Expired - Fee Related JP4997053B2 (ja) 2007-10-02 2007-10-02 高純度シリコンの製造方法

Country Status (1)

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JP (1) JP4997053B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130149549A1 (en) * 2011-12-12 2013-06-13 Nicholas Francis Borrelli Metallic structures by metallothermal reduction
KR101595330B1 (ko) * 2014-02-21 2016-02-19 재단법인영월청정소재산업진흥원 고순도 메탈실리콘 제조를 위한 실리카의 물리적 및 화학적 처리방법
JP5864659B2 (ja) * 2014-04-16 2016-02-17 ワイティーエス・サイエンス・プロパティーズ・プライベート・リミテッド 還元装置および酸素を脱離させる方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3208878A1 (de) * 1982-03-11 1983-09-22 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Semikontinuierliches verfahren zur herstellung von reinem silicium
JPH09202611A (ja) * 1996-01-25 1997-08-05 Kawasaki Steel Corp 金属シリコン中のボロン除去方法
JP2002193612A (ja) * 2000-12-26 2002-07-10 Kyc Kk 金属ケイ素の製造法

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