JP2009071962A - Inverter device and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an inverter device in which inductances generated in a positive potential bus bar and a negative potential bus bar are reduced while insulating them surely, and at least one of them is molded integrally with insulating resin as a terminal member. <P>SOLUTION: The inverter device 1 has a terminal member 300 including a positive potential bus bar 310 and a negative potential bus bar 320. The terminal member is composed of insulating resin and includes an insulation holding member 350 molded to hold only the first bus bar 310 of one of the positive potential bus bar and the negative potential bus bar together with molding of itself, the first bus bar has an exposed surface 311s, the second bus bar 320 has a surface 321s opposing the exposed surface of the first bus bar, the direction DC2 of a second current C2 flowing through the second bus bar is reverse to the direction DC1 of a first current, and the exposed surface of the first bus bar and the surface of the second bus bar facing the first bus bar are abutting mutually through an insulating sheet 340. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an inverter device including a terminal member connected to a switch circuit and including a positive potential bus bar that is set to a positive potential and a negative potential bus bar that is set to a negative potential, and a method of manufacturing the inverter device.

In recent years, electric vehicles and hybrid electric vehicles equipped with an electric drive system have been put into practical use as environmentally friendly vehicles. This electric drive system includes a battery, which is a DC power source, an AC motor, an inverter of a power converter, and the like. And in this electric power drive system, the direct current which a battery supplies is converted into alternating current power with an inverter apparatus, an alternating current motor is driven, and the driving force of a vehicle is obtained.
In this electric drive system, a large current (several hundred amperes) may be intermittently passed through the inverter device in order to generate a large driving force. In this case, due to the inductance generated in the positive potential bus bar and the negative potential bus bar of the inverter device, a large surge voltage (overvoltage) may be applied to the semiconductor switch element constituting the inverter device, which may cause a malfunction of the inverter device.

  Therefore, in order to reduce the inductance generated in the positive potential bus bar and the negative potential bus bar, a technique is known in which currents are caused to flow in directions opposite to each other while maintaining insulation between them (Patent Document 1). Patent Document 2). Furthermore, in Patent Document 3, a thin insulating member is interposed between a positive potential bus bar and a negative potential bus bar, and when these are insert molded and housed in a resin molded case, a molding resin and an insulating member It is shown that it is molded without contact.

JP 2007-89257 A Japanese Patent Laid-Open No. 2003-09507 JP 2006-86438 A

  However, even in the technique described in Patent Document 3, the heat of the injected molten resin is transmitted to the bus bar during the insert molding, and the insulating member between the bus bars is melted or deteriorated by the heat, and the insulating property is lowered. There is a risk of short circuit.

  The present invention has been made in view of the present situation, and while positively insulating the positive potential bus bar and the negative potential bus bar, the inductance generated in them is reduced, and at least one of these is integrated with the insulating resin. An object of the present invention is to provide an inverter device that is molded into a terminal member.

  The solving means is an inverter device including a positive potential bus bar that is set to a positive potential and a terminal member that includes a negative potential bus bar that is set to a negative potential. In addition to the molding, an insulating holding member is formed that is molded so as to hold only one of the positive potential bus bar and the negative potential bus bar, and the first bus bar is an exposed surface exposed from the insulating holding member. When the inverter device is driven, the inverter device has an exposed surface extending in a first current direction that is a direction of a first current flowing through the first bus bar, and the other of the positive potential bus bar and the negative potential bus bar. The second bus bar is opposed to the exposed surface of the first bus bar and has a facing surface extending in the first current direction, and the second bus bar flows to the second bus bar when the inverter device is driven. The flow direction is opposite to the direction of the first current flowing through the first bus bar, and the exposed surface of the first bus bar and the facing surface of the second bus bar are made of insulating resin. It is the inverter apparatus which mutually contacts through the insulating sheet which consists of.

In the inverter device of the present invention, since the insulating holding member made of the insulating resin holds the first bus bar integrally, the first bus bar can be easily assembled. Moreover, since the insulating sheet is interposed between the exposed surface of the first bus bar and the facing surface of the second bus bar, the first bus bar and the second bus bar can be reliably insulated.
Furthermore, in the inverter device of the present invention, the exposed surface of the first bus bar and the opposing surface of the second bus bar extend in the first current direction, and are in contact with each other via the insulating sheet. In addition, since current flows in the first bus bar and the second bus bar in opposite directions, the magnetic fields generated in the first bus bar and the second bus bar cancel each other, so that the inductance generated in them can be reduced.

Examples of the method for molding the insulating holding member include insert molding and outsert molding.
Moreover, as a material of an insulating sheet, what is necessary is just to be able to insulate between the exposed surface of a 1st bus bar, and the opposing surface of a 2nd bus bar through this. Examples of the sheet include film sheets such as a polyethylene film, a soft vinyl film, a polyester film, a polyphenylene sulfide film, a polyethylene naphthalate film, a fluororesin film, and a Kapton (registered trademark) film. Examples of the sheet include paper sheets such as crepe paper, special craft paper, and Nomex (registered trademark) paper, and cloth sheets such as acetate cloth, cotton cloth, polyester cloth, polyester nonwoven cloth, and glass cloth. Furthermore, the laminated sheet which laminated | stacked the sheet | seat of the same form or the sheet | seat of a some form is also mentioned. It is preferable that the first bus bar and the second bus bar be as close to each other as possible as long as the insulation between the two can be maintained.

  Furthermore, in the above-described inverter device, the insulating holding member is formed by the molding, and has a housing portion that houses the second bus bar and the insulating sheet after the molding, and the second bus bar and the insulating sheet Is preferably an inverter device housed in the housing portion.

  In the inverter device of the present invention, since the second bus bar and the insulating sheet are accommodated in the accommodating portion of the insulating holding member, not only the first bus bar and the insulating holding member but also the second bus bar and the insulating sheet are integrated. It can be handled as a terminal member. Therefore, these can be assembled easily and an inverter device with a simpler configuration can be obtained.

  Further, in the above-described inverter device, a smoothing capacitor having two electrode terminals, which is disposed on the second bus bar on the side opposite to the first bus bar when viewed from the second bus bar, The inverter device may have a smoothing capacitor in which one electrode terminal is connected to the first bus bar and the other electrode terminal is connected to the second bus bar.

  In the inverter device of the present invention, the smoothing capacitor is disposed on the second bus bar on the side opposite to the first bus bar as viewed from the second bus bar, that is, on the stacked first bus bar and second bus bar. ing. For this reason, since one electrode terminal and the first bus bar can be connected to the other electrode terminal and the second bus bar with a very short distance, that is, with low resistance and low inductance, the smoothing capacitor operates more appropriately. Can be made.

  In addition, as a connection form between the first bus bar and one connection terminal of the smoothing capacitor, for example, a part of the first bus bar that is not covered by the second bus bar when viewed from the smoothing capacitor and is exposed, For example, the connection terminal may be joined with solder or the like. Moreover, the form which perforates the 2nd bus bar near a smoothing capacitor and connects a 1st bus bar and one connection terminal through the hole is mentioned.

  Furthermore, in the above-described inverter device, the inverter device is a three-phase inverter device that generates U-phase, V-phase, and W-phase three-phase alternating current, and a U-phase semiconductor circuit that generates the U-phase power; A V-phase semiconductor circuit that generates the V-phase power, and a W-phase semiconductor circuit that generates the W-phase power, the U-phase semiconductor circuit, the V-phase semiconductor circuit, and the W-phase semiconductor. The circuits are arranged in this order in the first current direction, and the smoothing capacitor is located on the opposite side of the first current direction from the U-phase semiconductor circuit, the first smoothing capacitor, the U-phase semiconductor circuit, and the It is preferable that the inverter device includes a second smoothing capacitor positioned between the V-phase semiconductor circuits and a third smoothing capacitor positioned between the V-phase semiconductor circuit and the W-phase semiconductor circuit.

In the inverter device of the present invention, the first to third smoothing capacitors are provided in the vicinity of each phase of the semiconductor circuit, so that current can be appropriately supplied from each smoothing capacitor with low resistance for each phase of the semiconductor circuit. it can.
Further, even when the first bus bar and the second bus bar are connected to each phase of the semiconductor circuit by, for example, bonding wires, a smoothing capacitor can be arranged without interfering with the connection.

  Furthermore, it is preferable that a fourth smoothing capacitor is provided on the first current direction side of the W-phase semiconductor circuit. This is because by providing the fourth smoothing capacitor, it becomes possible to supply DC power appropriately by the W-phase semiconductor circuit.

  Furthermore, in the above-described inverter device, the inverter device is a three-phase inverter device that generates U-phase, V-phase, and W-phase three-phase alternating current, and is a U-phase semiconductor circuit that generates the U-phase power. A U-phase first switch circuit composed of a semiconductor switch element and a diode connected to the first bus bar, and a U-phase second switch circuit composed of a semiconductor switch element and a diode connected to the second bus bar. A V-phase semiconductor circuit for generating a V-phase power, the V-phase first switch circuit including a semiconductor switch element and a diode connected to the first bus bar, and the second bus bar A V-phase semiconductor circuit including a semiconductor switch element and a V-phase second switch circuit composed of a diode, and W for generating the W-phase power A W-phase first switch circuit comprising a semiconductor switch element and a diode connected to the first bus bar, and a W-phase second switch circuit comprising a semiconductor switch element and a diode connected to the second bus bar, A U-phase semiconductor circuit including the U-phase semiconductor circuit, the V-phase semiconductor circuit, and the W-phase semiconductor circuit in this order in the first current direction. The switch circuit, the V-phase first switch circuit, and the W-phase first switch circuit, the U-phase second switch circuit, the V-phase second switch circuit, and the W-phase second switch circuit are The terminal members are disposed on opposite sides of the first bus bar and the second bus bar, and the terminal member is interposed between the U-phase first switch circuit and the U-phase second switch circuit. The U-phase output bus bar for connecting to these and outputting the U-phase power, interposed between the V-phase first switch circuit and the V-phase second switch circuit, connected to these, and V A V-phase output bus bar that outputs phase power, and a W-phase output bus bar that is interposed between and connected to the W-phase first switch circuit and the W-phase second switch circuit and outputs the W-phase power. The phase output bus bar may be an inverter device that holds the phase output bus bar.

  In the inverter device of the present invention, the first switch circuit and the second switch circuit of each phase are arranged on the opposite sides of the first bus bar and the second bus bar, and the terminal member includes the output bus bar of each phase. keeping. In each phase, the first switch circuit and the second switch circuit are connected to an output bus bar interposed therebetween. Therefore, in each phase, the first switch circuit and the second switch circuit can be connected to the output bus bar by a short wiring (wire) or the like, and the first switch circuit and the second switch circuit are connected via the output bus bar. The three can be connected with low resistance. In each phase, the connection between the first bus bar and the first switch circuit and the connection between the second bus bar and the second switch circuit can be performed with a short resistance (wire) with low resistance. Thus, an inverter device having a lower resistance can be obtained.

  Furthermore, another solution is a method for manufacturing an inverter device including a positive potential bus bar that is set to a positive potential and a terminal member that includes a negative potential bus bar that is set to a negative potential. Of the positive potential bus bar and the negative potential bus bar, a molding step of molding the insulating holding member in a form in which only one first bus bar is held while exposing the exposed surface of the first bus bar, and the positive potential bus bar and the negative potential bus bar. An arrangement step of arranging the second bus bar in a state where the opposing surface of the other second bus bar of the bus bars is in contact with the exposed surface of the first bus bar via an insulating sheet made of an insulating resin. It is a manufacturing method of the inverter apparatus provided.

In the method for manufacturing an inverter device according to the present invention, since the second bus bar is arranged via the insulating sheet separately from the molding process of the insulating holding member that integrally molds the first bus bar, The insulating sheet does not melt or deteriorate. Further, when both the first bus bar and the second bus bar are held by insert molding, the insulating sheet is thinner than the thickness of the insulating resin layer interposed between the first bus bar and the second bus bar. Therefore, the size of the terminal member, and hence the size of the inverter device, can be reduced. In addition, reliability such as insulation and durability can be improved as compared with the case where an insulating resin layer is formed between the first bus bar and the second bus bar by insert molding.
In order to ensure insulation, it is preferable to interpose the insulating sheet not only between the first bus bar but also between the insulating resin of the terminal member.

(Embodiment)
First, an embodiment of the present invention will be described with reference to the drawings.
The inverter device 1 according to the present embodiment includes a terminal member 300 including a positive potential bus bar 310 and a negative potential bus bar 320, a U-phase semiconductor circuit 10u, a V-phase semiconductor circuit 10v, and a W-phase semiconductor circuit 10w (hereinafter, the three members are combined). And a three-phase inverter circuit).

First, the inverter apparatus 1 of this embodiment is shown in FIGS. 1 is a perspective view of the inverter device 1, FIG. 2 is a schematic circuit diagram of the inverter device 1, FIG. 3 is a top view of the inverter device 1, FIG. 4A is a cross-sectional view along AA, and FIG. It is -B sectional drawing. 5A is a perspective view of the positive potential bus bar 310 among the bus bars of the inverter device 1, and FIG. 5B is a perspective view of the output bus bar 330u and the like.
The inverter device 1 includes a rectangular plate-shaped pedestal 400 made of a Cu—Mo material, a first switch circuit group 100, a second switch circuit group 200, and a terminal member 300 disposed on the upper surface 400a. Has been.
Among these, the first switch circuit group 100 includes the U-phase first switch circuit unit 110u, the V-phase first switch circuit unit 110v, and the W-phase first switch among the three-phase semiconductor circuits 10u, 10v, and 10w described above. The circuit unit 110w (hereinafter, the three components are also referred to as a three-phase first switch circuit unit).

  Among these, as shown in FIG. 4A, the W-phase first switch circuit section 110w includes a W-phase first semiconductor switch element 112w and a W-phase first conductor substrate 114w with a solder layer 113w interposed therebetween. A W-phase first diode 111w is arranged. Similarly to the W-phase first switch circuit unit 110w, the V-phase first switch circuit unit 110v and the U-phase first switch circuit unit 110u are also the V-phase first semiconductor switch element 112v and the U-phase first semiconductor switch element 112u. , A V-phase first diode 111v and a U-phase first diode 111u are arranged. These three-phase first switch circuit portions 110u, 110v, 110w are arranged side by side on the upper surface 101a of the plate-like first insulating plate 101. The diodes 111u, 111v, and 111w are arranged so as to be closer to the terminal member 300 than the semiconductor switch elements 112u, 112v, and 112w.

  Similarly to the first switch circuit group 100 described above, the second switch circuit group 200 also includes a U-phase second switch circuit unit 210u and a V-phase second switch circuit unit among the three-phase semiconductor circuits 10u, 10v, and 10w. 210v and a W-phase second switch circuit unit 210w (hereinafter, the three are also referred to as a three-phase second switch circuit unit). The U-phase second switch circuit unit 210u, the V-phase second switch circuit unit 210v, and the W-phase second switch circuit unit 210w include a U-phase second semiconductor switch element 212u, a V-phase second semiconductor switch element 212v, and a W-phase second switch circuit unit 210w. Two semiconductor switch elements 212w, a U-phase second diode 211u, a V-phase second diode 211v, and a W-phase second diode 211w are arranged. These three-phase second switch circuit portions 210u, 210v, 210w are arranged side by side on the upper surface 201a of the plate-like second insulating plate 201. The diodes 211u, 211v, and 211w are arranged so as to be closer to the terminal member 300 than the semiconductor switch elements 212u, 212v, and 212w.

  On the other hand, the terminal member 300 has an elongated shape, and is arranged and fixed in the center of the upper surface 400a of the pedestal 400 so as to extend in a direction (longitudinal direction DL) along one side of the upper surface. The terminal members 300 are all made of copper, and include a positive potential bus bar 310 that is a positive potential, a negative potential bus bar 320 that is a negative potential, a U-phase output bus bar 330u, a V-phase output bus bar 330v, and a W-phase output bus bar 330w. (Hereafter, the three parties are also referred to as a three-phase output bus bar). Among these, the positive potential bus bar 310 and the negative potential bus bar 320 are configured to extend in the longitudinal direction DL of the terminal member 300. When a direct current is applied to the inverter device 1 using a battery (not shown), current flows through the positive potential bus bar 310 and the negative potential bus bar 320 along the longitudinal direction DL. If the direction of the first current C1 flowing in the positive potential bus bar 310 among these currents is the first current direction DC1, the direction of the second current C2 flowing in the negative potential bus bar 320, that is, the second current direction DC2 is exactly The direction is opposite to the first current direction DC1.

  Of the terminal member 300, the positive potential bus bar 310 and the three-phase output bus bars 330u, 330v, and 330w are insert-molded together with the insulating resin member 350. The positive potential bus bar 310 is integrally held by the insulating resin member 350. Among them, the rectangular flat plate-shaped exposed contact portion 311 is disposed below the rectangular plate-shaped negative potential bus bar 320. The exposed contact portion 311 extends in the first current direction DC1. The U-phase output bus bar 330u, the V-phase output bus bar 330v, and the W-phase output bus bar 330w are arranged in this order along the first current direction DC1. On the other hand, the negative potential bus bar 320 is disposed above the positive potential bus bar 310 and is fixed by a resin surrounding portion 351 of the insulating resin member 350. Of the negative potential bus bar 320, an opposing contact surface 321 s positioned below and facing the exposed contact surface 311 s of the positive potential bus bar 310 is also rectangular and extends in the first current direction DC <b> 1.

  Here, the positive potential bus bar 310 will be described in detail (see FIG. 5A). The positive potential bus bar 310 includes an exposed contact portion 311 that forms a rectangular planar exposed contact surface 311s, and four capacitor connection portions 314 that extend from the exposed contact portion 311 to the same height and are connected to a chip capacitor 360 described later. Further, it is lower than the exposed contact portion 311 and the capacitor connection portion 314, and has wire connection portions 312u, 312v, 312w for connection to a bonding wire 510 described later, and a connection hole 315 used for connection with a battery (not shown). . In addition, on the exposed contact portion 311 side from the wire connecting portions 312u, 312v, and 312w, through-holes 313u, 313v, and 313w through which output bus bars 330u, 330v, and 330w, which will be described later, are separated from the positive potential bus bar 310, are provided. Is formed.

Next, the negative potential bus bar 320 will be described. The negative potential bus bar 320 has a substantially rectangular plate shape (see FIG. 7A), and the wire contact portions 322u and 322v that connect the opposing contact surface 321s facing the exposed contact surface 311 of the positive potential bus bar 310 and the bonding wire 560. , 322w and a capacitor connection part 324 for connecting to a chip capacitor 360 described later. Further, a connection hole 325 used for connection with a battery (not shown) is formed.
Further, the three-phase output bus bars 330u, 330v, 330w have a crank shape in cross section, and have first end portions 331u, 331v, 331w positioned at a higher position and second end portions 332u, 332v, 332w positioned at a lower position. (See FIG. 5B). All three-phase output bus bars have the same shape.

  The positive potential bus bar 310, the negative potential bus bar 320, and the three-phase output bus bars 330u, 330v, and 330w are insulated from each other. The positive potential bus bar 310, the negative potential bus bar 320 and the three-phase output bus bars 330u, 330v, 330w are insulated with the molded insulating resin member 350 interposed as described above. In addition, the three-phase output bus bars 330u, 330v, and 330w are all insulated from each other because the insulating resin forming the molded insulating resin member 350 is interposed therebetween.

  On the other hand, the insulation between the positive potential bus bar 310 and the negative potential bus bar 320 will be described with reference to FIG. The negative potential bus bar 320 is held by the insulating resin member 350 while being sandwiched between the resin surrounding portion 351 of the insulating resin member 350 and the exposed contact surface 311 s of the positive potential bus bar 310. Between the exposed contact surface 311s of the positive potential bus bar 310 and the opposing contact surface 321s of the negative potential bus bar 320, insulating paper 340 (specifically, Nomex (registered trademark) paper) (thickness: 0.25 mm) to interpose the two. More specifically, since the insulating paper 340 is also interposed between the negative potential bus bar 320 and the insulating resin member 350, the positive potential bus bar 310 and the negative potential bus bar 320 through the creeping surface of the insulating resin member 350. Insulation is also planned. Part of the upper surface 320a of the negative potential bus bar 320 is exposed.

  In addition, the terminal member 300 includes four chip capacitors 360 (first to fourth chip capacitors 360A to 360D) (see FIG. 1). All of the chip capacitors 360 are disposed on the negative potential bus bar 320, the positive terminal 361 of the chip capacitor 360 is connected to the capacitor connecting portion 314 of the positive potential bus bar 310, and the negative terminal 362 of the chip capacitor 360 is connected to the negative potential bus bar 320. Are connected to the capacitor connecting portions 324 by soldering. The first chip capacitor 360A, the second chip capacitor 360B, the third chip capacitor 360C, and the fourth chip capacitor 360D are arranged in this order in the first current direction DC1, and are electrically connected in parallel. Specifically, the first phase in the first current direction DC1 (second current direction DC2) from the U-phase semiconductor circuit 10u (the U-phase first switch circuit unit 110u and the U-phase second switch circuit unit 210u) is A one-chip capacitor 360A is arranged. A second chip capacitor 360B is arranged between the U-phase semiconductor circuit 10u and the V-phase semiconductor circuit 10v (V-phase first switch circuit unit 110v and V-phase second switch circuit unit 210v). Further, a third chip capacitor 360C is arranged between the V-phase semiconductor circuit 10v and the W-phase semiconductor circuit 10w (W-phase first switch circuit unit 110w and W-phase second switch circuit unit 210w). Further, a fourth chip capacitor 360D is arranged on the first current direction DC1 side with respect to the W-phase semiconductor circuit 10w (see FIGS. 1 and 3).

  Next, the electrical connection between the bus bars 310, 320, 330u, 330v, and 330w of the terminal member 300 and the first switch circuit group 100 and the second switch circuit group 200 will be described in detail. As described above, the three-phase output bus bars 330u, 330v, and 330w that are insert-molded together with the insulating resin member 350 are the first in the order of the U-phase output bus bar 330u, the V-phase output bus bar 330v, and the W-phase output bus bar 330w. They are arranged in the current direction DC1. Further, on the first insulating plate 101, a U-phase first switch circuit unit 110u, a V-phase first switch circuit unit 110v, and a W-phase first switch circuit unit 110w are arranged in this order in the first current direction DC1. Are arranged side by side. Similarly, on the second insulating plate 201, the U-phase second switch circuit unit 210u, the V-phase second switch circuit unit 210v, and the W-phase second switch circuit unit 210w are arranged in the first current direction DC1 in this order. .

  Here, the electrical connection between the connection terminal 300, the first switch circuit 100u, etc., the second switch circuit 200u, etc. will be described by taking the U phase as an example. The wire connection portion 312u of the positive potential bus bar 310 and the U-phase first conductor substrate 114u are connected by a large number of bonding wires 510, and the U-phase first semiconductor switch elements 112u and U located on the U-phase first conductor substrate 114u. The phase first diode 111 u is connected by a large number of bonding wires 520. Furthermore, the U-phase first diode 111 u and the first end 331 u of the U-phase output bus bar 330 u are electrically connected by a large number of bonding wires 530. Further, the second end 332u of the U-phase output bus bar 330u and the U-phase second conductor substrate 214u are connected by a large number of bonding wires 540, and the U-phase second semiconductor switching element on the U-phase second conductor substrate 214u. 212u and the U-phase second diode 211u are connected by a large number of bonding wires 550. Furthermore, the U-phase second diode 211 u and the wire connection part 322 u of the negative potential bus bar 320 are electrically connected by a large number of bonding wires 560. Thereby, in the U-phase semiconductor circuit 10u, U-phase power can be extracted from the U-phase output bus bar 330u. In addition, since the bonding wires 510 to 560 are arranged as described above (see FIG. 4A), the inductance generated in the bonding wires (510 and 530, 540 and 560) flowing in reverse directions is reduced. Can do. Since the V and W phases are the same as the U phase, description thereof is omitted.

In the inverter device 1 according to this embodiment, since the insulating resin member 350 made of an insulating resin integrally holds the positive potential bus bar 310, the positive potential bus bar 310 can be easily assembled. Further, since the insulating paper 340 is interposed between the exposed contact surface 311s of the positive potential bus bar 310 and the opposing contact surface 321s of the negative potential bus bar 320, the positive potential bus bar 310 and the negative potential bus bar 320 are reliably insulated. can do.
Further, in this inverter device 1, the exposed contact surface 311 s of the positive potential bus bar 310 and the opposing contact surface 321 s of the negative potential bus bar 320 extend in the first current direction DC1 and are in contact with each other via the insulating paper 340. In addition, since the currents (C1, C2) flow in opposite directions from each other in the positive potential bus bar 310 and the negative potential bus bar 320, the magnetic fields generated in the positive potential bus bar 310 and the negative potential bus bar 320 cancel each other. Can be reduced.

Further, in the inverter device 1 of the present embodiment, the negative potential bus bar 320 and the insulating paper 340 are enclosed and accommodated by the resin surrounding portion 351 of the insulating resin member 350, so that not only the positive potential bus bar 310 and the insulating resin member 350 are included. The negative potential bus bar 320 and the insulating paper 340 can also be handled as an integrated terminal member 300. Therefore, these can be assembled easily and the inverter device 1 having a simpler configuration can be obtained.
Furthermore, in this inverter device 1, the chip capacitor 360 is on the negative potential bus bar 320 on the side opposite to the positive potential bus bar 310 when viewed from the negative potential bus bar 320, that is, the positive potential bus bar 310 and the negative potential bus bar 320 are provided. They are placed on top of each other. For this reason, since the positive electrode terminal 361 and the positive potential bus bar 310 and the negative electrode terminal 362 and the negative potential bus bar 320 can be connected with a very short distance, that is, with low resistance and low inductance, the chip capacitor 360 is more appropriately connected. Can be operated.

Furthermore, in the inverter device 1 according to the present embodiment, the first to third chip capacitors 360A to 360C are provided near the three-phase semiconductor circuits 10u, 10v, and 10w, respectively, so that the three-phase semiconductor circuits 10u, 10v, and 10w are provided. The current can be supplied from each of the chip capacitors 360A to 360C with an appropriate low resistance.
Further, even when the positive potential bus bar 310 and the negative potential bus bar 320 are connected to the three-phase semiconductor circuits 10u, 10v, and 10w by, for example, bonding wires 510 or the like, the chip capacitor 360 is disposed without interfering with this connection. it can.
Further, in the inverter device 1, the three-phase first switch circuit units 110 u, 110 v, 110 w and the three-phase second switch circuit units 210 u, 210 v, 210 w are connected to each other with the positive potential bus bar 310 and the negative potential bus bar 320 interposed therebetween. Arranged on the opposite side. Therefore, the connection between the positive potential bus bar 310 and the first switch circuit units 110u, 110v, and 110w for each phase and the connection between the negative potential bus bar 320 and the second switch circuit units 210u, 210v, and 210w for each phase are short. It can be done by wiring.

Next, a method for manufacturing the inverter device 1 according to the present embodiment will be described with reference to FIGS.
The molding process will be described with reference to FIG. The output bus bars 330u, 330v, 330w of the respective phases are passed through the through holes 313u, 313v, 313w of the positive potential bus bar 310, respectively. At this time, the first end portions 331u, 331v, and 331w of the three-phase output bus bars 330u, 330v, and 330w are disposed above the wire connection portions 312u, 312v, and 312w of the positive potential bus bar 310 (FIG. 6 ( a)). The positive potential bus bar 310 and the three-phase output bus bars 330u, 330v, and 330w are arranged apart from each other.
The positive potential bus bar 310 and the three-phase output bus bars 330u, 330v, and 330w (see FIG. 6B) arranged in this way are molded together with the insulating resin member 350 by insert molding. Using a mold (not shown), the molten insulating resin is cast and solidified around the positive potential bus bar 310 and the three-phase output bus bars 330u, 330v, 330w. As a result, the insulating resin member 350 is formed by holding the positive potential bus bar 310 and the three-phase output bus bars 330u, 330v, 330w integrally (see FIG. 6C). Of the insulating resin member 350, the resin surrounding portion 351 protruding like a bowl has a space for accommodating and fixing the negative potential bus bar 320 together with the exposed contact surface 311 s exposed from the insulating resin member 350 of the positive potential bus bar 310. Forming.

Next, the arrangement process will be described with reference to FIG. Of the negative potential bus bar 320, the opposing contact surface 321s on the lower surface and the upper surface 320a other than the wire connection portions 322u, 322v, 322w and the connection hole 325 are surrounded by the insulating paper 340, which is surrounded by the resin of the insulating resin member 350. It is inserted into the space between the portion 351 and the exposed contact surface 311 s of the positive potential bus bar 310. Specifically, the negative potential bus bar 320 is inserted through the insulating paper 340 so that the exposed contact surface 311 of the positive potential bus bar 310 and the opposing contact surface 321s of the negative potential bus bar 320 are in contact with each other. Thus, the negative potential bus bar 320 is accommodated while being sandwiched between the resin surrounding portion 351 and the exposed contact surface 311 of the positive potential bus bar 310 and is held by the insulating resin member 350.
Thereafter, the chip capacitor 360 is connected to the positive potential bus bar 310 and the negative potential bus bar 320 by soldering, and the terminal member 300 is completed.
Thereafter, the terminal member 300, the first switch circuit group 100, and the second switch circuit group 200 are thermocompression bonded to the upper surface 400a of the base 400 via an adhesive (not shown) and a solder layer (not shown), respectively. And fix. Further, each part is connected by a bonding wire 510 or the like. Thus, the inverter device 1 is completed (see FIG. 1).

  According to the method for manufacturing the inverter device 1 of the present embodiment, the disposing step of disposing the negative potential bus bar 320 via the insulating paper 340 separately from the forming step of the insulating resin member 350 integrally forming the positive potential bus bar 310. Therefore, the insulating paper 340 is not melted or altered by the heat generated by molding. Further, when both the positive potential bus bar 310 and the negative potential bus bar 320 are held by insert molding, an insulating resin layer that is formed so as to be interposed between the positive potential bus bar 310 and the negative potential bus bar 320. Since the thin insulating paper 340 is sufficient as compared with the thickness of the terminal member 300, the physique of the terminal member 300, and hence the physique of the inverter device 1, can be reduced. In addition, reliability such as insulation and durability can be improved as compared with the case where an insulating resin layer is formed between the positive potential bus bar 310 and the negative potential bus bar 320 by insert molding.

  In this embodiment, the positive potential bus bar 310 is the first bus bar, the negative potential bus bar 320 is the second bus bar, the exposed contact surface 311s is the exposed surface, the opposing contact surface 321s is the opposing surface, and the insulating paper 340 is the insulating sheet. In addition, the insulating resin member 350 corresponds to the distant holding member, and the resin surrounding portion 351 corresponds to the accommodating portion. The chip capacitor 360 corresponds to a smoothing capacitor, and the positive electrode terminal 361 and the negative electrode terminal 362 correspond to one and other electrode terminals of the smoothing capacitor, respectively.

In the above, the present invention has been described with reference to the embodiment. However, the present invention is not limited to the above embodiment, and it is needless to say that the present invention can be appropriately modified and applied without departing from the gist thereof.
For example, in the embodiment, the terminal member is disposed between the first switch circuit group and the second switch circuit group. However, the first switch circuit group and the second switch circuit group may be disposed on one side of the terminal member. Further, although the first bus bar is a positive potential bus bar and the second bus bar is a negative potential bus bar, the first bus bar may be a negative potential bus bar.

It is a perspective view of the inverter apparatus of embodiment. It is a schematic circuit diagram of the inverter apparatus of embodiment. It is a top view of the inverter device of the embodiment. It is explanatory drawing of the inverter apparatus of embodiment, (a) is AA sectional drawing, (b) is BB sectional drawing. It is explanatory drawing of the manufacturing method of the inverter apparatus of embodiment, (a) is a perspective view of a positive potential bus bar, (b) is a perspective view of an output bus bar. It is explanatory drawing of the shaping | molding process concerning embodiment. It is explanatory drawing of the arrangement | positioning process concerning embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Inverter apparatus 10u U phase semiconductor circuit 10v V phase semiconductor circuit 10w W phase semiconductor circuit 110u U phase 1st switch circuit part (U phase 1st switch circuit)
110v V-phase first switch circuit section (V-phase first switch circuit)
110w W-phase first switch circuit section (W-phase first switch circuit)
111u U-phase first diode (diode)
111v V-phase first diode (diode)
111w W-phase first diode (diode)
112u U-phase first switch element (semiconductor switch element)
112v V-phase first switch element (semiconductor switch element)
112w W-phase first switch element (semiconductor switch element)
210u U-phase second switch circuit section (U-phase second switch circuit)
210v V-phase second switch circuit section (V-phase second switch circuit)
210w W-phase second switch circuit section (W-phase second switch circuit)
211u U phase second diode (diode)
211v V-phase second diode (diode)
211w W-phase second diode (diode)
212u U-phase second switch element (semiconductor switch element)
212v V-phase second switch element (semiconductor switch element)
212w W-phase second switch element (semiconductor switch element)
300 Terminal member 310 Positive potential bus bar (first bus bar)
311s Exposed contact surface (exposed surface)
320 Negative potential bus bar (second bus bar)
321s Opposing contact surface (opposing surface)
330u U-phase output bus bar 330v V-phase output bus bar 330w W-phase output bus bar 340 Insulating paper (insulating sheet)
350 Insulating resin member (insulating holding member)
351 Resin enclosure (container)
360 Chip capacitor (smoothing capacitor)
360A First chip capacitor (first smoothing capacitor)
360B Second chip capacitor (second smoothing capacitor)
360C Third chip capacitor (third smoothing capacitor)
361 Positive terminal (electrode terminal)
361A First positive terminal (electrode terminal)
361B Second positive terminal (electrode terminal)
361C Third positive terminal (electrode terminal)
362 Negative terminal (electrode terminal)
362A First negative terminal (electrode terminal)
362B Second negative terminal (electrode terminal)
362C Third negative terminal (electrode terminal)
C1 First current C2 Second current DC1 First current direction DC2 Second current direction (direction of second current)

Claims (6)

An inverter device including a positive potential bus bar that is a positive potential and a terminal member that includes a negative potential bus bar that is a negative potential,
The terminal member is
It is made of insulating resin, and includes an insulating holding member formed in a form that holds only the first bus bar of the positive potential bus bar and the negative potential bus bar together with its own molding,
The first bus bar is
An exposed surface exposed from the insulating holding member, the exposed surface extending in a first current direction which is a direction of a first current flowing through the first bus bar when the inverter device is driven;
The other second bus bar of the positive potential bus bar and the negative potential bus bar is:
Facing the exposed surface of the first bus bar and having a facing surface extending in the first current direction;
When the inverter device is driven, the direction of the second current flowing through the second bus bar is arranged opposite to the direction of the first current flowing through the first bus bar.
The inverter device in which the exposed surface of the first bus bar and the facing surface of the second bus bar are in contact with each other via an insulating sheet made of an insulating resin. The inverter device according to claim 1,
The insulating holding member is
It is formed by the molding, and has a housing portion that houses the second bus bar and the insulating sheet after the molding,
An inverter device in which the second bus bar and the insulating sheet are accommodated in the accommodating portion. The inverter device according to claim 1 or 2,
A smoothing capacitor having two electrode terminals,
The second bus bar is disposed on the second bus bar on the side opposite to the first bus bar,
One electrode terminal is connected to the first bus bar,
An inverter device having a smoothing capacitor in which the other electrode terminal is connected to the second bus bar. The inverter device according to claim 3,
The inverter device is a three-phase inverter device that generates a three-phase alternating current of U phase, V phase, and W phase,
A U-phase semiconductor circuit for generating the U-phase power;
A V-phase semiconductor circuit for generating the V-phase power;
A W-phase semiconductor circuit that generates the W-phase power,
The U-phase semiconductor circuit, the V-phase semiconductor circuit, and the W-phase semiconductor circuit are arranged in this order in the first current direction,
The smoothing capacitor is
A first smoothing capacitor located on the opposite side of the first current direction from the U-phase semiconductor circuit;
A second smoothing capacitor located between the U-phase semiconductor circuit and the V-phase semiconductor circuit; and
An inverter device including a third smoothing capacitor positioned between the V-phase semiconductor circuit and the W-phase semiconductor circuit. The inverter device according to any one of claims 1 to 4,
The inverter device is a three-phase inverter device that generates a three-phase alternating current of U phase, V phase, and W phase,
A U-phase semiconductor circuit for generating the U-phase power,
A U-phase semiconductor circuit comprising: a U-phase first switch circuit comprising a semiconductor switch element and a diode connected to the first bus bar; and a U-phase second switch circuit comprising a semiconductor switch element and a diode connected to the second bus bar. When,
A V-phase semiconductor circuit for generating the V-phase power,
A V-phase semiconductor circuit comprising: a V-phase first switch circuit comprising a semiconductor switch element and a diode connected to the first bus bar; and a V-phase second switch circuit comprising a semiconductor switch element and a diode connected to the second bus bar. When,
A W-phase semiconductor circuit for generating the W-phase power,
A W-phase semiconductor circuit comprising: a W-phase first switch circuit comprising a semiconductor switch element and a diode connected to the first bus bar; and a W-phase second switch circuit comprising a semiconductor switch element and a diode connected to the second bus bar. And comprising
The U-phase semiconductor circuit, the V-phase semiconductor circuit, and the W-phase semiconductor circuit are arranged in this order in the first current direction,
The U-phase first switch circuit, the V-phase first switch circuit, and the W-phase first switch circuit, the U-phase second switch circuit, the V-phase second switch circuit, and the W-phase second switch circuit Is arranged on the opposite side through the first bus bar and the second bus bar,
The terminal member is
A U-phase output bus bar that is interposed between the U-phase first switch circuit and the U-phase second switch circuit and is connected to the U-phase output switch and outputs the U-phase power;
A V-phase output bus bar that is interposed between and connected to the V-phase first switch circuit and the V-phase second switch circuit, and outputs the V-phase power; and
An inverter device comprising a W-phase output bus bar that is interposed between the W-phase first switch circuit and the W-phase second switch circuit and is connected to the W-phase output bus bar and outputs the W-phase power. A method of manufacturing an inverter device including a positive potential bus bar that is a positive potential and a terminal member that includes a negative potential bus bar that is a negative potential,
A molding step of molding the insulating holding member into a form in which only one of the positive potential bus bar and the negative potential bus bar is held while exposing the exposed surface of the first bus bar by injection molding of the insulating resin. When,
The second bus bar is placed in a state in which the opposing surface of the other second bus bar of the positive potential bus bar and the negative potential bus bar is in contact with the exposed surface of the first bus bar via an insulating sheet made of insulating resin. An arrangement method of arranging an inverter device.

Images