JP2009058346A5 - - Google Patents

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Publication number
JP2009058346A5
JP2009058346A5 JP2007225360A JP2007225360A JP2009058346A5 JP 2009058346 A5 JP2009058346 A5 JP 2009058346A5 JP 2007225360 A JP2007225360 A JP 2007225360A JP 2007225360 A JP2007225360 A JP 2007225360A JP 2009058346 A5 JP2009058346 A5 JP 2009058346A5
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JP
Japan
Prior art keywords
type semiconductor
temperature sensor
electrode
temperature
sensing unit
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Application number
JP2007225360A
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Japanese (ja)
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JP2009058346A (en
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Publication date
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Priority to JP2007225360A priority Critical patent/JP2009058346A/en
Priority claimed from JP2007225360A external-priority patent/JP2009058346A/en
Publication of JP2009058346A publication Critical patent/JP2009058346A/en
Publication of JP2009058346A5 publication Critical patent/JP2009058346A5/ja
Withdrawn legal-status Critical Current

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Claims (5)

ＳＯＩ基板と、
前記ＳＯＩ基板上に形成されたＰ型半導体およびＮ型半導体と、
前記Ｐ型半導体と前記Ｎ型半導体によって形成されたＰＮ接合部と、
前記ＰＮ接合部又はその近傍に温度測定対象物を当接するセンシング部と、
前記Ｐ型半導体に接し、前記センシング部の反対側に接続された第一の電極と、
前記Ｎ型半導体に接し、前記センシング部の反対側に接続された第二の電極と、を有し、
前記センシング部に当接した温度測定対象物の温度を測定する温度センサ。 An SOI substrate;
A P-type semiconductor and an N-type semiconductor formed on the SOI substrate;
A PN junction formed by the P-type semiconductor and the N-type semiconductor;
A sensing unit that abuts a temperature measurement object on or near the PN junction; and
A first electrode in contact with the P-type semiconductor and connected to the opposite side of the sensing unit;
A second electrode in contact with the N-type semiconductor and connected to the opposite side of the sensing unit;
A temperature sensor that measures the temperature of a temperature measurement object in contact with the sensing unit. 前記温度センサは、前記Ｐ型半導体および前記Ｎ型半導体または前記ＳＯＩ基板の厚みを変える事で、温度の伝達する時間を制御する事を特徴とする請求項１記載の温度センサ。   The temperature sensor according to claim 1, wherein the temperature sensor controls a time for transmitting temperature by changing a thickness of the P-type semiconductor, the N-type semiconductor, or the SOI substrate. 前記温度センサは、前記センシング部と前記第一の電極または前記第二の電極との距離を変える事で、温度の伝達する時間を制御する事を特徴とする請求項１記載の温度センサ。   The temperature sensor according to claim 1, wherein the temperature sensor controls a time for transmitting temperature by changing a distance between the sensing unit and the first electrode or the second electrode. 前記温度センサは、前記第一の電極の電圧と前記第二の電極の電圧が入力されるアンプを有する事を特徴とする請求項１記載の温度センサ。   2. The temperature sensor according to claim 1, wherein the temperature sensor includes an amplifier to which the voltage of the first electrode and the voltage of the second electrode are input. 前記アンプは、前記ＳＯＩ基板上に構成する事を特徴とする請求項４記載の温度センサ。   The temperature sensor according to claim 4, wherein the amplifier is configured on the SOI substrate.
JP2007225360A 2007-08-31 2007-08-31 Temperature sensor Withdrawn JP2009058346A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007225360A JP2009058346A (en) 2007-08-31 2007-08-31 Temperature sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007225360A JP2009058346A (en) 2007-08-31 2007-08-31 Temperature sensor

Publications (2)

Publication Number Publication Date
JP2009058346A JP2009058346A (en) 2009-03-19
JP2009058346A5 true JP2009058346A5 (en) 2010-07-22

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JP2007225360A Withdrawn JP2009058346A (en) 2007-08-31 2007-08-31 Temperature sensor

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113110646A (en) * 2021-05-31 2021-07-13 广东积微科技有限公司 Constant temperature control circuit based on semiconductor material TEC

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6459876A (en) * 1987-08-29 1989-03-07 Tokin Corp Thermoelectric conversion element
JP4749794B2 (en) * 2005-08-05 2011-08-17 川惣電機工業株式会社 Temperature measuring method and apparatus

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