JP2009038785A - Electromagnetic field absorbing and attenuating element - Google Patents
Electromagnetic field absorbing and attenuating element Download PDFInfo
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本発明は、交番磁界を効果的に導体線路と結合させる構成による電磁界吸収減衰素子に関する。The present invention relates to an electromagnetic field absorption and attenuation element having a configuration in which an alternating magnetic field is effectively coupled to a conductor line.
高周波回路から発生するノイズ対策に使用されるいわゆるノイズ抑制材は、多くの場合、シート状の磁性材料などの複合材料で構成されている。この場合、各種電子機器の小型によって、シートの厚さを薄く構成すること、および周波数特性を維持するための複合材料構成、つまり材料の誘電率、透磁率の制御が極めて困難となるという問題がある。
本発明の第一の解決課題は、交番磁界が基板上の導体線路に強く結合し、誘導電流が一方向に誘起される導体線路を構成した上で、誘導電流の生起点と到達点を結線し、閉回路を構成し、その中間にインピーダンス整合の観点から所定の抵抗率変化を有する抵抗体を配置した構成で、近傍磁界を効果的に吸収減衰させることを目的とした電子回路ノイズ対策用近傍電磁界吸収減衰素子を提供することにある。特に、近傍電磁界対策用として応用する場合は、導体線路を含む基板上のすべての導体、および抵抗体部分は絶縁材料、すなわち誘電性材料で被覆したり、コーティングを施したりして絶縁性を図っている。なお、本発明で抵抗体と称している抵抗とは、通常のカーボン材等による抵抗体のみならず、磁性材料における磁気的損失を有する抵抗体も含め、これらを総称している。本発明は、従来のシート状の電子回路ノイズ対策素子がもっている問題点である周波数特性を良好に維持するための複合材料構成条件、すなわち材料の誘電率、透磁率の制御が極めて困難となるという課題を、簡便な高周波回路による手段で解決している。
第二の解決課題は、従来プリント基板や電波吸収材上に導体素子と抵抗体、または能動素子などを付与した電波吸収体が公知である（例えば、電子情報通信学会誌小特集，Ｖｏｌ．８８，Ｎｏ．１２，ｐｐ．９３２−９３６，２００５年１２月、および電子情報通信学会論文誌，Ｖｏｌ．Ｊ８８−Ｃ，Ｎｏ．１２，ｐｐ．１１４２−１１４８，２００５年１２月など）。これらは、到来電磁波が斜入射の場合、斜入射特性が劣化すという問題がある。特に、ＴＭ波の斜入射特性が劣化し、通常の電波吸収体に要求される反射量−２０ｄＢを維持することはほとんど不可能である。本発明の構成原理は、遠方電磁界に対しては、磁界結合を高めるための効果を有し、特にＴＭ波の斜入射時における電波吸収特性劣化の問題を解決している。なお、遠方放射電磁界の場合は、電界も誘起電流の発生に寄与するため、このことも考慮して、本電磁界吸収減衰素子を構成している。すなわち、本発明の電磁界吸収素子の原理は、近傍磁界に関しては、電子回路から発生する磁界成分によるノイズを吸収減衰できる簡便なノイズ抑制対策素子を、また遠方放射磁界、つまり通常の電波に対しては、電波吸収体の斜入射特性、特にＴＭ波斜入射特性時の電波吸収特性の劣化を改善できるという二つの機能を有している。In many cases, so-called noise suppression materials used for countermeasures against noise generated from high-frequency circuits are composed of a composite material such as a sheet-like magnetic material. In this case, due to the small size of the various electronic devices, there is a problem that it is extremely difficult to control the control of the composite material structure for maintaining the frequency characteristics, that is, making the sheet thickness thin, that is, the material permittivity and permeability. is there.
The first problem to be solved by the present invention is to form a conductor line in which an alternating magnetic field is strongly coupled to a conductor line on a substrate and an induced current is induced in one direction, and then the origination point and the arrival point of the induced current are connected. In a configuration where a closed circuit is formed and a resistor having a predetermined change in resistivity is arranged in the middle of the impedance matching, it is for electronic circuit noise countermeasures for the purpose of effectively absorbing and attenuating nearby magnetic fields. The object is to provide a near electromagnetic field absorption attenuation element. In particular, when applied as a countermeasure for near electromagnetic fields, all the conductors and resistor parts on the substrate including the conductor lines are covered with an insulating material, that is, a dielectric material, or coated to provide insulation. I am trying. The resistor referred to as a resistor in the present invention is a generic term including not only a resistor made of a normal carbon material but also a resistor having a magnetic loss in a magnetic material. In the present invention, it is extremely difficult to control the composite material composition conditions for maintaining good frequency characteristics, that is, the dielectric constant and permeability of the material, which is a problem with the conventional sheet-shaped electronic circuit noise countermeasure element. This problem is solved by means of a simple high-frequency circuit.
As a second problem to be solved, a radio wave absorber in which a conductor element and a resistor, or an active element is provided on a printed circuit board or a radio wave absorber is known (for example, a small special issue of the Institute of Electronics, Information and Communication Engineers, Vol. 88). No. 12, pp. 932-936, December 2005, and Journal of the Institute of Electronics, Information and Communication Engineers, Vol. J88-C, No. 12, pp. 1142-1148, December 2005, etc.). These have the problem that when the incoming electromagnetic wave is obliquely incident, the oblique incident characteristics deteriorate. In particular, the oblique incidence characteristics of TM waves are deteriorated, and it is almost impossible to maintain the amount of reflection −20 dB required for a normal radio wave absorber. The configuration principle of the present invention has an effect of enhancing magnetic field coupling with respect to a far electromagnetic field, and particularly solves the problem of deterioration of radio wave absorption characteristics when TM waves are obliquely incident. In the case of a far radiated electromagnetic field, the electric field also contributes to the generation of the induced current. Therefore, the electromagnetic field absorption and attenuation element is configured in consideration of this. In other words, the principle of the electromagnetic field absorbing element of the present invention is that, with respect to the near magnetic field, a simple noise suppression countermeasure element capable of absorbing and attenuating noise due to a magnetic field component generated from an electronic circuit, and a far radiated magnetic field, that is, a normal radio wave In particular, it has two functions of improving the oblique incident characteristics of the radio wave absorber, in particular, the deterioration of the radio wave absorption characteristics during the TM wave oblique incident characteristic.
上記の課題を解決するために、請求項１では、交番磁界が基板上の導体線路に強く結合し、かつ誘導電流が一方向に誘起することに着目して導体線路を設計する手段をとる。すなわち、例えば、実施例の図１に示す交番磁界の向き（１）に対して、電流が生起し易いような形状の導体線路（２）を基板上（３）に形成し、交番磁界による主たる誘導電流誘起領域を（４）、（５）間とおよび（６）、（７）間とし、この中間に所定の変化率に従う抵抗率を持って徐々に変化する抵抗体（８）を配置する。その上で、誘導電流励起始点（４）と誘導電流到達終端点（７）の間を結線（８）し、誘導電流に対する閉回路を構成する。この構成によって、効果的に磁界結合がなされ、しかも誘導電流が閉回路を流れる際に抵抗体によって吸収減衰される。この原理は、遠方放射磁界つまり電波や、近傍放射磁界の結合の両者に共に有効で、この基本構成を組み合わせることによって、種々の方向からの交番磁界とも結合し、交番磁界を吸収減衰できる。すなわち、本発明の電磁界吸収減衰素子をシート状基板で構成したものを、ノイズが発生している各種電子回路基板に平行に近接して装荷することによって効果的にノイズを抑制できる。他方、この電磁界吸収減衰素子を遠方からの放射電磁界、つまり通常の電波に応用する例として、電磁界吸収減衰素子を基板上に周期的または非周期的に配列して構成する手段による電波吸収体がある。この場合は、磁界結合要素を取り入れた構成であるため、従来この種の電波吸収体で問題であったＴＭ波斜入射時の特性劣化に対応でき特性改善に極めて有効な手段を与えることができる。
請求項２は、所定の変化率に従う抵抗率で徐々に変化する抵抗体（８）の部位は、必ずしも連続的に抵抗値が変化しなくてもよいことを主張したものである。すなわち、マイクロチップ抵抗などを用いて、抵抗値が不連続的に変化するものも用いることができ、またマイクロチップ抵抗一個でも構成できる。
請求項３は、請求項１，２の構成において、抵抗体の代わりにＰＩＮダイオードなどの能動素子を用いる手段で、電気的に磁界の吸収減衰を制御できるという近傍および遠方電磁界吸収減衰素子に関する。
請求項４は、請求項１，２，３の回路構成において、導体線路に容量を装荷したり、線路形状に依存して高周波的に容量が付加されたりする手段で、共振構造を取り入れることを特徴とする電磁界吸収減衰素子に関する。このような手段によって、広帯域化や各種周波数に対応できる電磁界吸収減衰素子を構成することが可能となる。
請求項５は、請求項１，２，３，４の構成において、通常の電子回路基板の代わりに他の磁性体や誘電性材料、各種複合材料を用い、電磁界吸収減衰特性を一層改善した電磁界吸収減衰素子に関する。
請求項６は、請求項１、２，３、４、５の電磁界吸収素子を基板上に多数配列するという手段で構成した電波吸収体に関するもので、特にＴＭ波斜入射時における電波吸収特性の劣化防止に対して有効な手段を提供している。In order to solve the above-mentioned problems, the first aspect takes a means for designing a conductor line by paying attention to the fact that an alternating magnetic field is strongly coupled to a conductor line on a substrate and an induced current is induced in one direction. That is, for example, with respect to the direction (1) of the alternating magnetic field shown in FIG. 1 of the embodiment, a conductor line (2) having such a shape that an electric current easily occurs is formed on the substrate (3), and the main is generated by the alternating magnetic field. The induced current induction region is between (4), (5), and (6), (7), and a resistor (8) that gradually changes with a resistivity according to a predetermined rate of change is arranged in between. . Then, the induction current excitation start point (4) and the induction current arrival termination point (7) are connected (8) to form a closed circuit for the induction current. With this configuration, magnetic field coupling is effectively performed, and when the induced current flows through the closed circuit, it is absorbed and attenuated by the resistor. This principle is effective for both far-field radiated magnetic field, that is, radio wave and near-field radiated magnetic field, and by combining this basic configuration, it is possible to couple with alternating magnetic field from various directions and absorb and attenuate the alternating magnetic field. That is, it is possible to effectively suppress noise by loading the electromagnetic field absorption / attenuation element of the present invention composed of a sheet-like substrate in close proximity to various electronic circuit boards generating noise. On the other hand, as an example of applying this electromagnetic field absorption / attenuation element to an electromagnetic field radiated from a distance, that is, a normal radio wave, a radio wave generated by means of arranging the electromagnetic field absorption / attenuation element periodically or aperiodically on a substrate There is an absorber. In this case, since the magnetic field coupling element is incorporated, it is possible to cope with the characteristic deterioration at the time of oblique incidence of the TM wave, which has been a problem with this type of wave absorber, and to provide an extremely effective means for improving the characteristic. .
Claim 2 claims that the resistance value of the part of the resistor (8) that gradually changes with the resistivity according to the predetermined rate of change does not necessarily change continuously. That is, it is possible to use a microchip resistor or the like whose resistance value changes discontinuously, or a single microchip resistor.
A third aspect of the present invention relates to a near and far electromagnetic field absorption and attenuation element in which the magnetic field absorption and attenuation can be electrically controlled by means using an active element such as a PIN diode instead of a resistor in the configuration of the first and second aspects. .
A fourth aspect of the present invention is the circuit configuration according to any one of the first, second, and third aspects, wherein a capacitance is loaded on the conductor line or a high-frequency capacitance is added depending on the shape of the line. The present invention relates to a characteristic electromagnetic field absorption attenuation element. By such means, it is possible to configure an electromagnetic field absorption / attenuation element that can cope with a wide band and various frequencies.
The fifth aspect of the present invention further improves the electromagnetic field absorption and attenuation characteristics by using other magnetic materials, dielectric materials, and various composite materials in place of the normal electronic circuit board in the configuration of the first, second, third, and fourth aspects. The present invention relates to an electromagnetic field absorption attenuation element.
A sixth aspect of the present invention relates to a radio wave absorber formed by means of arranging a large number of electromagnetic field absorbing elements according to the first, second, third, fourth, and fifth aspects on a substrate. Provides an effective means for preventing the deterioration of
図１は、請求項１に関連する電磁界吸収減衰素子の基本原理を示す回路の例である。図１の磁界の向き（１）に対して、電磁界吸収減衰素子は、交番磁界が基板上の導体線路（２）に強く結合し、かつ誘導電流が一方向に流れるように一対の鍵型の一端を結合し、鍵型の他端が左右反対方向を向くように導体線路を構成する。例えば、実施例図１に示す交番磁界の向き（１）に対して、電流が誘起しやすいような形状の導体回路（２）を基板上（３）に形成している。交番磁界による誘導電流は、主に（４）、（５）間、および（６）、（７）間に誘起し、共に右側から左側へ流れる。この同一方向に流れるという事実に着目すれば、この中間に所定の変化率に従う抵抗率を有する抵抗体部分（８）を配置すると、半ば強制的に誘導電流は、この抵抗体を流れて吸収され減衰する。この場合、誘導電流誘起始点（４）と誘導電流到達終端点（７）の間を、図１の点線で示すように、この鍵型の導体線路（２）と絶縁するようにして結線（９）すれば、誘導電流に対する閉回路が構成でき、誘導電流はこの閉回路を周回し効果的に減衰する。勿論、誘導電流誘起始点（４）と誘導電流到達終端点（７）の関係は、交番磁界であるためそれぞれ交互に入れ替わる関係にある。なお、この場合、誘導電流誘起始点（４）と誘導電流到達終端点（７）の間を結線せず、閉回路を構成しなくても吸収減衰効果は得られる。本実施例は、本発明の基本原理を示すもので、このような回路構成を他の回路内，例えば矩形導体線路で構成する回路内に組み込み、他のＰＩＮダイオードなどの能動素子と共存させることによっても、電気的に特性を可変できる近傍および遠方電磁界を効果的に吸収減衰することができる。近傍界を対象とする場合は、他回路とのショートや放電を極力抑えるために、基板上の抵抗体部分や導体部分は絶縁材で被覆したり、コーティングしたりする手段を講じている。また、とくに、遠方放射界つまり通常の電波に対する応用例としては、電波吸収体において、ＴＭ波の斜入射特性が劣化する問題が、従来しばしば問題となってきたが、この対策に応用して極めて有効である。
図２は、本名発明の電磁界吸収減衰素子の基本回路を応用した、他の実施例である。これは図１に示す基本回路を中心でまとめ水平、垂直、斜め４５度の磁界成分とカップリングできるように構成で閉ループ用の結線（８）を設けない場合の実施例である。
図３は、図１の電磁界吸収減衰素子の実施例が、磁界による誘起電流のインピーダンス整合性を考え、所定の変化率に従う抵抗率を持って徐々に変化するように抵抗体部分（８）を配置したのに対し、この抵抗体配置部位のみならず導体線路部分を全対的に、あらかじめ定めた一定の抵抗値を有する線路をテーパー状に形成した抵抗体（１０）を用いて、徐々に変化する抵抗値と等価な特性を持たせた発明である。すなわち、抵抗体配置部位の抵抗値変化を等価的に簡易化した実施例である。また、インピーダンス整合の点から誘導電流誘起始点（４）と誘導電流到達終端点（６）の先端もテーパー状に構成している。なお、本発明で抵抗体部分（８）と称している抵抗とは、通常のカーボン材による抵抗体のみならず、磁気的な損失を有する磁性の抵抗体も包含している。
図４は、本発明の基本原理に基づく発明による電波吸収体用の電磁界吸収減衰素子の一実施例である。図４に示すように導体線路から成る誘導電流誘起領域を（４）、（５）間とおよび（６）、（７）間は、それぞれの中間で４５度に曲げて、この角度に応じた入射磁界にも対応できるよう構成してある。また、この実施例では、図１に示した所定の変化率に従う抵抗率を有する抵抗体部分（８）に代えて、マイクロチップ抵抗（１１）を使用し、かつ高周波的な共振回路を構成するために積極的にコンデンサ（１２）を装荷している。
図５は、図４に示した電磁界吸収減衰素子を図５に示すように基板上または他の材料上に配置して、これらの背面にスペーサー（１３）を設け、その背面に導体板（１４）を宛がったいわゆる１／４波長型（Ｓａｌｉｓｂｕｒｙ ｓｃｒｅｅｎ ａｂｓｏｒｂｅｒ）に属する電波吸収体である。この構成をとることによって、到来電磁界の磁界とも効果的に結合し、誘導電流を吸収減衰が効果的になされるため、特に電波吸収体のＴＭ波斜入斜時における電波吸収特性劣化の問題を解決できる。このように、遠方放射電磁界に対する電波吸収体においては、従来問題となってきたＴＭ波斜入射時の特性を効果的に改善できる特徴を有している。なお、本発明の基本素子である鍵型電磁界吸収減衰素子において、抵抗体部分の変わりにＰＩＮダイオードなどの能動素子を用い、このバイアス電圧を変えることによって電気的に制御出来る近傍および遠方電磁界吸収減衰素子、つまり電子回路ノイズ抑制素子や電波吸収体を構成できる。FIG. 1 is an example of a circuit showing the basic principle of an electromagnetic field absorption / attenuation element related to claim 1. With respect to the magnetic field direction (1) in FIG. 1, the electromagnetic field absorption / attenuation element has a pair of key types so that the alternating magnetic field is strongly coupled to the conductor line (2) on the substrate and the induced current flows in one direction. The conductor lines are configured such that one end of each is coupled and the other end of the key shape faces in the opposite direction. For example, a conductor circuit (2) is formed on the substrate (3) so as to easily induce a current in the direction (1) of the alternating magnetic field shown in FIG. The induced current due to the alternating magnetic field is mainly induced between (4) and (5) and between (6) and (7), and both flow from the right side to the left side. Paying attention to the fact that it flows in the same direction, if a resistor part (8) having a resistivity according to a predetermined change rate is arranged in the middle, the induced current is forced to flow through this resistor and absorbed. Attenuates. In this case, as shown by the dotted line in FIG. 1, the connection between the induction current induction start point (4) and the induction current arrival termination point (7) is insulated from the key-shaped conductor line (2) (9 ), A closed circuit for the induced current can be formed, and the induced current circulates around the closed circuit and is effectively attenuated. Of course, the relationship between the induction current induction start point (4) and the induction current arrival end point (7) is an alternating magnetic field, and thus is alternately switched. In this case, the absorption attenuation effect can be obtained without connecting the induction current induction start point (4) and the induction current arrival termination point (7) and forming a closed circuit. This embodiment shows the basic principle of the present invention. Such a circuit configuration is incorporated in another circuit, for example, a circuit constituted by a rectangular conductor line, and coexists with other active elements such as PIN diodes. By this, it is possible to effectively absorb and attenuate near and far electromagnetic fields whose characteristics can be electrically varied. When the near field is targeted, means for covering or coating the resistor portion and the conductor portion on the substrate with an insulating material are taken in order to suppress short circuit and discharge with other circuits as much as possible. In particular, as an example of application to a far field, that is, a normal radio wave, the problem of deterioration of the oblique incidence characteristics of the TM wave in the radio wave absorber has often been a problem in the past. It is valid.
FIG. 2 shows another embodiment to which the basic circuit of the electromagnetic field absorption / attenuation element of the present invention is applied. This is an embodiment in which the basic circuit shown in FIG. 1 is centralized and the connection (8) for the closed loop is not provided in the configuration so that it can be coupled to the horizontal, vertical, and oblique 45 degree magnetic field components.
FIG. 3 shows an example of the electromagnetic field absorption / attenuation element of FIG. 1, considering the impedance matching of the induced current due to the magnetic field, so that the resistor portion (8) changes gradually with a resistivity according to a predetermined rate of change. The resistor (10) in which a line having a predetermined fixed resistance value is formed in a taper shape not only in the resistor arrangement part but also in the conductor line part is gradually used. This is an invention having a characteristic equivalent to a resistance value that changes. That is, this is an embodiment in which the change in resistance value of the resistor arrangement portion is equivalently simplified. From the point of impedance matching, the leading ends of the induced current induction start point (4) and the induced current arrival termination point (6) are also tapered. The resistor referred to as the resistor portion (8) in the present invention includes not only a resistor made of a normal carbon material but also a magnetic resistor having a magnetic loss.
FIG. 4 is an embodiment of an electromagnetic field absorption / attenuation element for a radio wave absorber according to the invention based on the basic principle of the present invention. As shown in FIG. 4, the induced current induction region composed of conductor lines is bent at 45 degrees between (4) and (5) and between (6) and (7) according to this angle. It is configured to handle incident magnetic fields. In this embodiment, a microchip resistor (11) is used instead of the resistor portion (8) having a resistivity according to the predetermined change rate shown in FIG. 1, and a high-frequency resonance circuit is configured. Therefore, the capacitor (12) is positively loaded.
5, the electromagnetic field absorption / attenuation element shown in FIG. 4 is arranged on a substrate or other material as shown in FIG. 5, and a spacer (13) is provided on the back side thereof, and a conductor plate ( 14) is a radio wave absorber belonging to a so-called ¼ wavelength type (Salisbury screen absorber). By adopting this configuration, it effectively couples with the incoming electromagnetic field and effectively absorbs and attenuates the induced current. Can be solved. Thus, the radio wave absorber with respect to the far radiated electromagnetic field has a feature that can effectively improve the characteristics at the time of oblique incidence of the TM wave, which has been a problem in the past. In the key type electromagnetic field absorption / attenuation element which is the basic element of the present invention, an active element such as a PIN diode is used instead of the resistor portion, and a near and far electromagnetic field which can be electrically controlled by changing this bias voltage. Absorption attenuation elements, that is, electronic circuit noise suppression elements and radio wave absorbers can be configured.
本発明の電磁界吸収減衰素子は、これまで述べたように交番磁界が基板上の導体線路に強く結合し、これによる誘導電流が一方向に流れるように導体線路を工夫して、近傍および遠方磁界を効果的に吸収減衰できる電磁界吸収減衰素子を提供している。この結果、近傍磁界応用として、各種電子回路から発生するノイズ抑制素子を回路的立場から簡単に構成できる。また、遠方からの放射電磁界を吸収するための、いわゆる電波吸収体に、この電磁界吸収減衰素子を応用すれば、射入射特性時の電波吸収特性の劣化、とくに従来解決が困難であったＴＭ波の射入射特性劣化の問題を解決できるという顕著な効果がある。また、従来のノイズ抑制シートなどに比べ，一旦設計条件が定まれば、周波数変化に対しては構成寸法の調節、つまり共振条件の変更だけですむという簡便さがあり、製造コスト的にも大きな利点がある。本発明の原理は、種々の材料や回路素子とのとの組合せや構成回路の変形実施によって種々の特性を得ることが出来、実施してその効果は大きい。 As described above, the electromagnetic field absorption / attenuation element of the present invention devise the conductor line so that the alternating magnetic field is strongly coupled to the conductor line on the substrate and the induced current flows in one direction. An electromagnetic field absorption and attenuation element capable of effectively absorbing and attenuating a magnetic field is provided. As a result, as a near magnetic field application, a noise suppression element generated from various electronic circuits can be easily configured from a circuit standpoint. In addition, if this electromagnetic field absorption attenuation element is applied to a so-called radio wave absorber for absorbing electromagnetic fields radiated from a distance, it is difficult to solve the problem of radio wave absorption characteristics at the time of incident radiation, especially the conventional solution. There is a remarkable effect that the problem of deterioration of the incident characteristics of TM waves can be solved. In addition, compared to conventional noise suppression sheets, once the design conditions are determined, it is easier to adjust the configuration dimensions, that is, to change the resonance conditions for frequency changes. There are advantages. According to the principle of the present invention, various characteristics can be obtained by combining with various materials and circuit elements or by modifying the constituent circuits.
１――――交番磁界の向き、 ２――――導体線路、
３――――基板、
（４，５）間――――交番磁界による主たる誘導電流誘起領域、
（６、７）間――――もう一方の交番磁界による主たる誘導電流誘起領域、
８――――所定の変化率従う抵抗率を持って徐々に変化する抵抗体、
９――――結線、 １０テーパー状に形成した抵抗体、
１１―――――マイクロチップ抵抗
１２―――――マイクロチップコンデンサ、
１３―――――スペーサー、
１４―――――導体板1 ―――― Direction of alternating magnetic field, 2 ―――― Conductor line,
3---substrate,
Between (4, 5) --- The main induced current induced region by an alternating magnetic field,
Between (6, 7) --- The main induced current induction region by the other alternating magnetic field,
8 --- A resistor that gradually changes with a resistivity according to a predetermined rate of change,
9 --- Connection, 10-tapered resistor,
11 ----
13 ----- Spacer,
14 ---- Conductor plate
Claims (6)
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| JP2007224826A JP2009038785A (en) | 2007-08-04 | 2007-08-04 | Electromagnetic field absorbing and attenuating element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007224826A JP2009038785A (en) | 2007-08-04 | 2007-08-04 | Electromagnetic field absorbing and attenuating element |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170104547A1 (en) * | 2015-10-12 | 2017-04-13 | Nxp B.V. | Electromagnetic device |
| CN110829036A (en) * | 2019-11-04 | 2020-02-21 | 北京理工大学 | Ultra-thin ultra-wideband electromagnetic wave absorber |
| WO2022011806A1 (en) * | 2020-07-15 | 2022-01-20 | 盛纬伦(深圳)通信技术有限公司 | Radome capable of mixing absorbing and diffuse scattering |
| DE112020006270T5 (en) | 2020-02-27 | 2023-03-02 | Mitsubishi Electric Corporation | FREQUENCY-SELECTIVE SURFACE ELEMENT, FREQUENCY-SELECTIVE SURFACE AND ELECTROMAGNETIC WAVE ABSORBER |
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2007
- 2007-08-04 JP JP2007224826A patent/JP2009038785A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170104547A1 (en) * | 2015-10-12 | 2017-04-13 | Nxp B.V. | Electromagnetic device |
| EP3157101A1 (en) * | 2015-10-12 | 2017-04-19 | Nxp B.V. | Electromagnetic device |
| CN106981361A (en) * | 2015-10-12 | 2017-07-25 | 恩智浦有限公司 | Calutron |
| US10326536B2 (en) * | 2015-10-12 | 2019-06-18 | Nxp B.V. | Electromagnetic device for damping a first circuit with respect to a second circuit |
| CN106981361B (en) * | 2015-10-12 | 2021-11-23 | 恩智浦有限公司 | Electromagnetic device |
| CN110829036A (en) * | 2019-11-04 | 2020-02-21 | 北京理工大学 | Ultra-thin ultra-wideband electromagnetic wave absorber |
| CN110829036B (en) * | 2019-11-04 | 2020-12-22 | 北京理工大学 | Ultra-thin ultra-wideband electromagnetic wave absorber |
| DE112020006270T5 (en) | 2020-02-27 | 2023-03-02 | Mitsubishi Electric Corporation | FREQUENCY-SELECTIVE SURFACE ELEMENT, FREQUENCY-SELECTIVE SURFACE AND ELECTROMAGNETIC WAVE ABSORBER |
| WO2022011806A1 (en) * | 2020-07-15 | 2022-01-20 | 盛纬伦(深圳)通信技术有限公司 | Radome capable of mixing absorbing and diffuse scattering |
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