JP2009038081A - Semiconductor laser drive circuit and laser welding power supply - Google Patents

Semiconductor laser drive circuit and laser welding power supply Download PDF

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JP2009038081A
JP2009038081A JP2007198787A JP2007198787A JP2009038081A JP 2009038081 A JP2009038081 A JP 2009038081A JP 2007198787 A JP2007198787 A JP 2007198787A JP 2007198787 A JP2007198787 A JP 2007198787A JP 2009038081 A JP2009038081 A JP 2009038081A
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laser
semiconductor laser
driving circuit
value
semiconductor
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Takahide Shigematsu
孝英 重松
Toshiya Takei
俊哉 竹井
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Nippon Avionics Co Ltd
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Nippon Avionics Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/50—General aspects of joining tubular articles; General aspects of joining long products, i.e. bars or profiled elements; General aspects of joining single elements to tubular articles, hollow articles or bars; General aspects of joining several hollow-preforms to form hollow or tubular articles
    • B29C66/51—Joining tubular articles, profiled elements or bars; Joining single elements to tubular articles, hollow articles or bars; Joining several hollow-preforms to form hollow or tubular articles
    • B29C66/53—Joining single elements to tubular articles, hollow articles or bars
    • B29C66/534—Joining single elements to open ends of tubular or hollow articles or to the ends of bars
    • B29C66/5346—Joining single elements to open ends of tubular or hollow articles or to the ends of bars said single elements being substantially flat
    • B29C66/53461—Joining single elements to open ends of tubular or hollow articles or to the ends of bars said single elements being substantially flat joining substantially flat covers and/or substantially flat bottoms to open ends of container bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
    • B29C65/16—Laser beams
    • B29C65/1629—Laser beams characterised by the way of heating the interface
    • B29C65/1635—Laser beams characterised by the way of heating the interface at least passing through one of the parts to be joined, i.e. laser transmission welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
    • B29C65/16—Laser beams
    • B29C65/1629—Laser beams characterised by the way of heating the interface
    • B29C65/1654—Laser beams characterised by the way of heating the interface scanning at least one of the parts to be joined
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/05—Particular design of joint configurations
    • B29C66/10—Particular design of joint configurations particular design of the joint cross-sections
    • B29C66/11—Joint cross-sections comprising a single joint-segment, i.e. one of the parts to be joined comprising a single joint-segment in the joint cross-section
    • B29C66/112—Single lapped joints
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/05—Particular design of joint configurations
    • B29C66/10—Particular design of joint configurations particular design of the joint cross-sections
    • B29C66/11—Joint cross-sections comprising a single joint-segment, i.e. one of the parts to be joined comprising a single joint-segment in the joint cross-section
    • B29C66/114—Single butt joints
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/05—Particular design of joint configurations
    • B29C66/20—Particular design of joint configurations particular design of the joint lines, e.g. of the weld lines
    • B29C66/24—Particular design of joint configurations particular design of the joint lines, e.g. of the weld lines said joint lines being closed or non-straight
    • B29C66/242—Particular design of joint configurations particular design of the joint lines, e.g. of the weld lines said joint lines being closed or non-straight said joint lines being closed, i.e. forming closed contours
    • B29C66/2424—Particular design of joint configurations particular design of the joint lines, e.g. of the weld lines said joint lines being closed or non-straight said joint lines being closed, i.e. forming closed contours being a closed polygonal chain
    • B29C66/24243—Particular design of joint configurations particular design of the joint lines, e.g. of the weld lines said joint lines being closed or non-straight said joint lines being closed, i.e. forming closed contours being a closed polygonal chain forming a quadrilateral
    • B29C66/24244—Particular design of joint configurations particular design of the joint lines, e.g. of the weld lines said joint lines being closed or non-straight said joint lines being closed, i.e. forming closed contours being a closed polygonal chain forming a quadrilateral forming a rectangle
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/90—Measuring or controlling the joining process
    • B29C66/91—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux
    • B29C66/914—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by controlling or regulating the temperature, the heat or the thermal flux
    • B29C66/9161—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by controlling or regulating the temperature, the heat or the thermal flux by controlling or regulating the heat or the thermal flux, i.e. the heat flux
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/90—Measuring or controlling the joining process
    • B29C66/91—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux
    • B29C66/919—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux characterised by specific temperature, heat or thermal flux values or ranges
    • B29C66/9192—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux characterised by specific temperature, heat or thermal flux values or ranges in explicit relation to another variable, e.g. temperature diagrams
    • B29C66/91951—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux characterised by specific temperature, heat or thermal flux values or ranges in explicit relation to another variable, e.g. temperature diagrams in explicit relation to time, e.g. temperature-time diagrams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/90—Measuring or controlling the joining process
    • B29C66/93—Measuring or controlling the joining process by measuring or controlling the speed
    • B29C66/934—Measuring or controlling the joining process by measuring or controlling the speed by controlling or regulating the speed
    • B29C66/93441—Measuring or controlling the joining process by measuring or controlling the speed by controlling or regulating the speed the speed being non-constant over time
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/90—Measuring or controlling the joining process
    • B29C66/96—Measuring or controlling the joining process characterised by the method for implementing the controlling of the joining process
    • B29C66/962—Measuring or controlling the joining process characterised by the method for implementing the controlling of the joining process using proportional controllers, e.g. PID controllers [proportional–integral–derivative controllers]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00—Other particular articles
    • B29L2031/34—Electrical apparatus, e.g. sparking plugs or parts thereof
    • B29L2031/3481—Housings or casings incorporating or embedding electric or electronic elements

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Thermal Sciences (AREA)
  • Semiconductor Lasers (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser drive circuit capable of freely setting up a profile. <P>SOLUTION: This invention relates to the semiconductor laser drive circuit which processes an irradiated body by irradiating a laser beam, while causing a laser output to be a predetermined set value by carrying out a feedback control, wherein the set value is a laser drive current value corresponding to the laser output of the semiconductor laser, characterized by a function of a laser irradiation time duration. This set value is characterized by being set up, by receiving a designation value consisting of a laser irradiation elapsed time and laser outputs at the time point, and by connecting these laser outputs in an order of the laser irradiation elapsed time by a straight line, and by carrying out a linear interpolation during this period to compute the laser outputs, and by converting this computed value to the corresponding laser drive current value. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、レーザ光を被対象物に照射することで被対象物を溶着させるレーザ溶着装置に用いられるレーザ溶着電源に係り、特に半導体レーザ駆動回路に関するものである。   The present invention relates to a laser welding power source used in a laser welding apparatus for welding an object by irradiating the object with laser light, and more particularly to a semiconductor laser driving circuit.

従来、例えば光デバイス素子や水晶振動子などの電子部品を実装した電子部品パッケージの気密封止においては、蓋体を電子部品パッケージに被せて、電子部品パッケージと蓋体との重ね合わせ部分に蓋体側からレーザを照射することで電子部品パッケージに蓋体を溶着している。   Conventionally, for example, in airtight sealing of an electronic component package in which an electronic component such as an optical device element or a crystal resonator is mounted, the lid is placed on the electronic component package and the electronic component package and the lid are covered with the lid. The lid is welded to the electronic component package by irradiating the laser from the body side.

このような用途ばかりでなく、２種の部材を溶着する場合にもレーザ溶着が用いられている。このレーザ溶着に用いられるレーザ光としてはパルス状の不連続光のもの（以下、パルスレーザともいう。）と同一出力の連続光のものが知られている（特許文献１、２参照）。また、パルス状のレーザ光を連続的に発生させて、出力値の異なる連続光とするものも知られている（特許文献３参照）。   Laser welding is used not only for such applications but also for welding two types of members. As laser light used for this laser welding, continuous light having the same output as that of pulsed discontinuous light (hereinafter also referred to as pulse laser) is known (see Patent Documents 1 and 2). There is also known a technique in which pulsed laser light is continuously generated to produce continuous light having different output values (see Patent Document 3).

特許文献１には、内部に発電要素などが収納された角型ケースと蓋板をレーザ溶接する際に、まず所定の箇所に仮止め溶接を行った後に、角型ケースと蓋板からなるワークが搭載されたテーブルを所定量ずつ移動させつつレーザビームを照射することで角型ケースと蓋板を封止する技術が開示されている。このときの溶接対象が金属であることから、大きな出力が必要であるためレーザ光はパルスレーザである。   In Patent Document 1, when laser welding a rectangular case in which a power generation element or the like is housed and a lid plate, first, temporary welding is performed at a predetermined position, and then a workpiece made of the rectangular case and the lid plate is used. A technique for sealing a rectangular case and a cover plate by irradiating a laser beam while moving a table on which the is mounted by a predetermined amount is disclosed. Since the object to be welded at this time is a metal, a large output is required, so the laser beam is a pulse laser.

一方、特許文献２には、溶接対象がセラミックなどでなる電子部品パッケージにコバールなどでなる蓋板を被せたものが開示されている。そして、この場合は、レーザ光の出力を連続的かつ一定のものとし、レーザ光照射位置移動手段により、蓋板の全周囲に渡ってレーザ光を照射して電子部品パッケージを気密封止するものである。   On the other hand, Patent Document 2 discloses that an electronic component package whose welding object is made of ceramic or the like is covered with a cover plate made of Kovar or the like. In this case, the output of the laser beam is made continuous and constant, and the electronic component package is hermetically sealed by irradiating the laser beam over the entire periphery of the cover plate by the laser beam irradiation position moving means. It is.

そして、特許文献３には、複数の半導体レーザを用いて、この半導体レーザを順次駆動させて各半導体レーザの出力パルスの大きさと時間幅とが連続した加工条件対応する大きさと時間幅からなるような出力パルスのレーザ光を得る技術が開示されている。   In Patent Document 3, a plurality of semiconductor lasers are used, and the semiconductor lasers are sequentially driven so that the output pulses of the respective semiconductor lasers have a size and a time width corresponding to continuous processing conditions. A technique for obtaining a laser beam with an appropriate output pulse is disclosed.

特開平１１−２４５０６６号公報Japanese Patent Laid-Open No. 11-245066 特開２００６−２０５２１６号公報JP 2006-205216 A 特開平８−３２１６５１号公報JP-A-8-321651

しかしながら、特許文献１および特許文献２に記載されているような方法ではレーザ溶着するときに、溶着部分が直線部分である場合や等速度で照射位置が変動するときには問題はないが、曲線部分で照射位置変動速度が異なるときには溶着結果が不均等になるという欠点があった。
また、特許文献３に記載されている方法では、複数の半導体レーザが必要であり、それらをそれぞれ所望の時間幅のパルス出力としなければならず、複雑な制御が必要となるという欠点があった。 However, in the methods described in Patent Document 1 and Patent Document 2, when laser welding is performed, there is no problem when the welded portion is a straight portion or when the irradiation position varies at a constant speed, but the curved portion When the irradiation position fluctuation speed is different, there is a drawback that the welding result becomes uneven.
In addition, the method described in Patent Document 3 requires a plurality of semiconductor lasers, each of which has to have a pulse output of a desired time width, and has a disadvantage that complicated control is required. .

本発明は、上記課題を解決するためになされたもので、１つの半導体レーザを用いて容易に溶着時間とレーザ光出力を設定できる半導体レーザ駆動回路とこの半導体レーザ駆動回路を用いたレーザ溶着電源を提供することを目的とする。   The present invention has been made to solve the above problems, and a semiconductor laser driving circuit capable of easily setting a welding time and a laser beam output by using one semiconductor laser, and a laser welding power source using the semiconductor laser driving circuit. The purpose is to provide.

本発明になる半導体レーザ駆動回路は、フィードバック制御することでレーザ出力を予め定められた設定値になるようにしながらレーザ光を照射することで被照射物を加工する半導体レーザの駆動回路であって、前記設定値は、前記半導体レーザのレーザ出力に対応したレーザ駆動電流値であって、レーザ照射時間の関数であること、を特徴とするものである。 A semiconductor laser driving circuit according to the present invention is a semiconductor laser driving circuit that processes an irradiated object by irradiating a laser beam while controlling a laser output to a predetermined set value by feedback control. The set value is a laser drive current value corresponding to the laser output of the semiconductor laser and is a function of the laser irradiation time.

また、本発明になる半導体レーザ駆動回路の設定値は、レーザ照射経過時間とその時点のレーザ出力とからなる指定値を受けて、レーザ照射経過時間の順にこれらのレーザ出力を直線で結び、この間を線形補間してレーザ出力を算出して、この算出値を対応するレーザ駆動電流値に変換して設定されることを特徴とするものである。   Also, the set value of the semiconductor laser drive circuit according to the present invention receives a specified value consisting of the laser irradiation elapsed time and the laser output at that time, and connects these laser outputs in a straight line in the order of the laser irradiation elapsed time. Is linearly interpolated to calculate a laser output, and this calculated value is converted into a corresponding laser drive current value and set.

また、本発明になる半導体駆動回路は、前記半導体レーザ駆動回路であって、半導体レーザ駆動電流を検出する検出部と、この検出部で検出された駆動電流値と前記設定された電流値とを比較し、前記半導体レーザ駆動電流を設定された電流値とする帰還制御部と、を具備することを特徴とするものである。   The semiconductor drive circuit according to the present invention is the semiconductor laser drive circuit, comprising a detection unit that detects a semiconductor laser drive current, a drive current value detected by the detection unit, and the set current value. And a feedback control unit that sets the semiconductor laser driving current to a set current value.

また、本発明になる半導体レーザ駆動回路のレーザ駆動電流記検出部の電流センサはホール素子からなることを特徴とするものである。   In addition, the current sensor of the laser drive current recording detection part of the semiconductor laser drive circuit according to the present invention comprises a Hall element.

また、本発明になる半導体レーザ駆動回路の帰還制御部はＰＩＤ制御部からなることを特徴とするものである。   Further, the feedback control unit of the semiconductor laser driving circuit according to the present invention comprises a PID control unit.

さらに、本発明になるレーザ溶着電源は、前記半導体レーザ駆動回路を備えていることを特徴とするものである。 Furthermore, the laser welding power source according to the present invention is characterized by including the semiconductor laser driving circuit.

本発明になる半導体レーザ駆動回路を用いることにより、半導体レーザからレーザ照射時間の関数からなるレーザ駆動電流値で規定されたレーザ出力を得ることができる。この規定されたレーザ出力は、各指定点間を線形補間して求めているので、連続性を保持しつつ変化させることができる。従って、レーザ照射移動方向が直線の場合やレーザ照射位置の移動速度が一定の場合だけでなく、移動方向が曲線の場合や移動速度が一定でない場合もそれぞれのレーザ照射位置で均等なレーザ加熱が可能となる（請求項１ないし請求項５）。   By using the semiconductor laser driving circuit according to the present invention, it is possible to obtain a laser output defined by a laser driving current value which is a function of laser irradiation time from a semiconductor laser. Since the prescribed laser output is obtained by linear interpolation between the designated points, it can be changed while maintaining continuity. Therefore, not only when the laser irradiation movement direction is a straight line or when the movement speed of the laser irradiation position is constant, but also when the movement direction is a curve or when the movement speed is not constant, uniform laser heating is performed at each laser irradiation position. It becomes possible (Claims 1 to 5).

本発明になるレーザ溶着電源を用いることにより、上記のようにそれぞれのレーザ照射位置で均等なレーザ加熱が可能となるから、レーザ光に対して透過性を備える樹脂と吸収性の樹脂から部材を均質に溶着できる（請求項６）。   By using the laser welding power source according to the present invention, it becomes possible to perform uniform laser heating at each laser irradiation position as described above. Therefore, a member made of a resin that is transparent to laser light and an absorbent resin is used. It can weld uniformly (Claim 6).

次に本発明について図を用いて詳細に説明する。
図１は、本発明になる半導体レーザ駆動回路の要部ブロック図、図２は、この半導体レーザ駆動回路のレーザ照射経過時間とレーザ出力との関係を表示したレーザ出力プロファイル図、図３、４は本発明になるレーザ溶着装置を用いて電子部品パッケージを気密封止する様子を示す概念図である。 Next, the present invention will be described in detail with reference to the drawings.
FIG. 1 is a block diagram of a main part of a semiconductor laser driving circuit according to the present invention. FIG. 2 is a laser output profile diagram showing the relationship between the laser irradiation elapsed time and the laser output of the semiconductor laser driving circuit. These are the conceptual diagrams which show a mode that an electronic component package is airtightly sealed using the laser welding apparatus which concerns on this invention.

図１において、１は電流制御部９の制御を受けて所定の出力のレーザ光を照射する半導体レーザダイオード、２は例えばホール素子などであり、半導体レーザダイオード１の駆動電流を電圧として検出する検出部、３は検出部２で検出された電圧を予め決められた増幅度で増幅してフィードバックする電流フィードバック部、４は電流フィードバック部３からの電圧を所定のサンプリング周波数でアナログ電圧からデジタル電圧に変換するＡ／Ｄ変換部である。検出部２では半導体レーザダイオード１の駆動電流を直接検出せずに電圧を検出している。これは検出部２に使用されているホール素子はその特性からホール素子の制御電流（駆動電流と等しい）に比例した出力電圧が得られるので次元と絶対値は異なるが、実質的に駆動電流を検出しているに等しいことになるからである。   In FIG. 1, reference numeral 1 denotes a semiconductor laser diode that irradiates a laser beam with a predetermined output under the control of the current controller 9, and 2 denotes a Hall element, for example, which detects the drive current of the semiconductor laser diode 1 as a voltage. 1 and 3, a current feedback unit for amplifying and feeding back the voltage detected by the detection unit 2 with a predetermined amplification degree, and 4 for converting the voltage from the current feedback unit 3 from an analog voltage to a digital voltage at a predetermined sampling frequency. An A / D conversion unit for conversion. The detector 2 detects the voltage without directly detecting the drive current of the semiconductor laser diode 1. This is because the Hall element used in the detection unit 2 can obtain an output voltage proportional to the control current (equivalent to the drive current) of the Hall element from its characteristics. This is because it is equal to the detection.

５は所望の数のレーザ照射経過時間とその時点のレーザ出力とからなる指定値を入力し、この指定値をもとにしてレーザ照射経過時間の順にこれらのレーザ出力を直線で結び、この間を線形補間してレーザ出力を算出して、この算出値を対応するレーザ駆動電流値に変換し、さらに検出部２のレーザ駆動電流と検出電圧の対応に応じた電圧を算出するプロファイル設定部、６はプロファイル設定部５からのレーザ照射経過時間対レーザ出力に対応した電圧からなるプロファイルをテーブル形式で記憶する設定プロファイルテーブルである。この実施の形態ではプロファイルは１種類の場合についてだけ説明しているが、複数のプロファイルを設定することもできる。   5 inputs a specified value consisting of a desired number of laser irradiation elapsed times and the laser output at that time, and based on this specified value, these laser outputs are connected in a straight line in the order of the laser irradiation elapsed time, A profile setting unit for calculating a laser output by linear interpolation, converting the calculated value into a corresponding laser driving current value, and calculating a voltage corresponding to the correspondence between the laser driving current of the detecting unit 2 and the detected voltage; 6 Is a setting profile table for storing a profile composed of a voltage corresponding to the laser irradiation elapsed time from the profile setting section 5 versus the laser output in a table format. In this embodiment, only one type of profile has been described, but a plurality of profiles can be set.

７はＡ／Ｄ変換部４からの検出電圧と設定プロファイルテーブル６からの設定電圧とを受けて差分を算出し、この差分をなくすように比例、積分、微分制御により必要な制御データを算出するＰＩＤ制御部、８はＰＩＤ制御部７からの制御データを受けてアナログの制御信号に変換するＤ／Ａ変換部、９は主にＭＯＳＦＥＴからなり、半導体レーザダイオード１に応じた電源電圧ＶｃｃとＤ／Ａ変換部８からのアナログ制御信号とを受けて、このアナログ制御信号で前記ＭＯＳＦＥＴのゲートソース間の電圧を変化させることで、半導体レーザダイオード１の駆動電流となる前記ＭＯＳＦＥＴのドレインソース間の電流を制御する電流制御部である。なお、１０はレーザ溶着対象である。   7 receives the detected voltage from the A / D converter 4 and the set voltage from the setting profile table 6 to calculate a difference, and calculates necessary control data by proportional, integral, and differential control so as to eliminate this difference. A PID control unit 8 is a D / A conversion unit that receives control data from the PID control unit 7 and converts it into an analog control signal, and 9 is mainly composed of a MOSFET, and the power supply voltages Vcc and D corresponding to the semiconductor laser diode 1 In response to the analog control signal from the / A converter 8, the voltage between the gate and source of the MOSFET is changed by this analog control signal, so that the drive current of the semiconductor laser diode 1 becomes between the drain and source of the MOSFET. It is a current control unit for controlling the current. Reference numeral 10 denotes a laser welding target.

図２において、Ｐ１〜Ｐ６はプロファイル設定部に入力する指定値である。Ｐｉは（ｔｉ，ＰＷＲｉ）（ｉ＝１〜６の正の整数）で指定され、ｔｉはレーザ照射経過時間、ＰＷＲｉはその時点でのレーザ出力である。指定されないレーザ照射経過時間のレーザ出力は前記したように隣接する指定値間を直線で結び、線形補間して求める。図２の５つの実線の線分がこの直線に当る。   In FIG. 2, P1 to P6 are designated values input to the profile setting unit. Pi is specified by (ti, PWRi) (i = 1 to a positive integer of 1 to 6), ti is the laser irradiation elapsed time, and PWRi is the laser output at that time. As described above, the laser output of the laser irradiation elapsed time that is not specified is obtained by connecting the adjacent specified values with a straight line and performing linear interpolation. The five solid line segments in FIG. 2 correspond to this straight line.

図３において、５１は前記半導体レーザ駆動回路によりレーザ光出力を制御するように構成されたレーザ溶着装置、６１は上面開口部を有し、その凹部６２に電子部品を実装するレーザ光に対して吸収性を有する樹脂からなるケース、６３はケース６１の上面開口部を覆うレーザ光に対して透過性を有する蓋体である。ケース６１と蓋体６３とで電子部品パッケージ６５を構成する。   In FIG. 3, 51 is a laser welding apparatus configured to control the laser light output by the semiconductor laser driving circuit, 61 has an upper surface opening, and the laser light for mounting electronic components in the recess 62 A case 63 made of a resin having absorptivity is a lid that is transparent to the laser beam covering the upper surface opening of the case 61. The case 61 and the lid 63 constitute an electronic component package 65.

図４において、四隅が丸みを帯びた線はレーザ溶着装置５１からのレーザ光が照射される軌跡であり、矢印はレーザ光の軌跡の移動方向を示す。なお、この丸みを帯びた位置ではレーザ照射位置移動速度を直線の位置と比較して遅くするので、溶着の均一性を高めるためにレーザ光の出力を低下させる。   In FIG. 4, the lines with rounded four corners are trajectories irradiated with the laser light from the laser welding apparatus 51, and the arrows indicate the moving directions of the laser light trajectories. In this rounded position, the laser irradiation position moving speed is slow compared with the linear position, so that the output of the laser beam is lowered in order to improve the uniformity of welding.

次に、本発明になる半導体レーザダイオード駆動回路の動作を図３に示す電子部品パッケージ６５をレーザ溶着装置５１を用いて樹脂溶着することを例にとって説明する。   Next, the operation of the semiconductor laser diode driving circuit according to the present invention will be described by taking as an example the resin welding of the electronic component package 65 shown in FIG.

［プロファイルの設定］
プロファイルの設定に先立って、レーザ溶着装置５１と電子部品パッケージ６５を用いて、実験的にレーザ照射位置を図４の矢印付き実線のように移動させながら、蓋体６３とケース６１を溶着させて、気密封止が可能である程度に均一な溶着ができるプロファイルを決定する。 [Profile Settings]
Prior to setting the profile, the lid 63 and the case 61 are welded using the laser welding device 51 and the electronic component package 65 while experimentally moving the laser irradiation position as indicated by the solid line with the arrow in FIG. Then, a profile capable of airtight sealing and uniform welding to some extent is determined.

こうして決定されたプロファイルを直線近似できる複数の線分に区分し、これらの線分の両端における（ｔｎ，ＰＷＲｎ）を求める。ただし、ｔｎはレーザ照射経過時間（ｎは自然数）、ＰＷＲｎはレーザ出力（ｎは自然数）である。
そして、（ｔｎ，ＰＷＲｎ）を指定値として入力する。
この入力された指定値を受けて、前記の通りプロファイルを設定する。 The profile thus determined is divided into a plurality of line segments that can be linearly approximated, and (tn, PWRn) at both ends of these line segments is obtained. However, tn is a laser irradiation elapsed time (n is a natural number), and PWRn is a laser output (n is a natural number).
Then, (tn, PWRn) is input as a specified value.
In response to the input designated value, the profile is set as described above.

［溶着作業］
まず、公知の搬送、位置合わせ手段を用いてケース６１を所定の載置台に載置し、ケース６１の上面開口部を覆うように蓋体６３を被せる。
そして、レーザ溶着装置５１からレーザ光を電子部品パッケージ６５に照射しつつ、その間実験時と同じようにレーザ光の照射位置を図４の矢印付き実線のように移動させる。
この照射位置の移動も公知の手段により行う。 [Welding work]
First, the case 61 is mounted on a predetermined mounting table using a known conveyance and alignment means, and the lid 63 is covered so as to cover the upper surface opening of the case 61.
Then, while irradiating the electronic component package 65 with laser light from the laser welding device 51, the irradiation position of the laser light is moved as indicated by a solid line with an arrow in FIG.
This irradiation position is also moved by a known means.

レーザ照射開示時の動作から説明する。
設定プロファイルテーブルから設定されたプロファイルデータが読み出される。このデータがＰＩＤ制御部７に入力されるが、このときＰＩＤ制御部７ではもう一方の入力であるＡ／Ｄ変換部４からの検出電圧が「０」であるから、差分は設定されたプロファイルデータそのものとなる。従って、このプロファイルデータがＤ／Ａ変換部８に入力され、ここでアナログ制御信号に変換されて電流制御部９に入力される。このアナログ制御信号は前記ＭＯＳＦＥＴのゲートソース間の電圧を決定するので、それに応じてドレインソース間の電流が流れ、この電流が半導体レーザダイオード１の駆動電流ｉとなり、この電流に応じたレーザ光が照射される。 The operation when laser irradiation is disclosed will be described.
Profile data set is read from the setting profile table. This data is input to the PID control unit 7. At this time, the detected voltage from the A / D conversion unit 4 which is the other input is “0” in the PID control unit 7, so the difference is the set profile. The data itself. Accordingly, this profile data is input to the D / A converter 8 where it is converted into an analog control signal and input to the current controller 9. Since this analog control signal determines the voltage between the gate and source of the MOSFET, a current between the drain and source flows accordingly, and this current becomes the driving current i of the semiconductor laser diode 1, and the laser beam corresponding to this current is generated. Irradiated.

このとき、この駆動電流ｉは検出部２により電流に応じた電圧として検出されて電流フィードバック回路３に入力される。そして、ここで所定の増幅を受けＡ／Ｄ変換部４に入力され、デジタルデータに変換される。次にこのデジタルデータに変換された検出電圧はＰＩＤ制御部７に入力され、ここでもう１つの入力である設定プロファイルデータと比較され差分が算出される。そして、この差分を打ち消すような制御データが生成される。   At this time, the drive current i is detected by the detector 2 as a voltage corresponding to the current and input to the current feedback circuit 3. Then, it is subjected to predetermined amplification and input to the A / D converter 4 where it is converted into digital data. Next, the detected voltage converted into the digital data is input to the PID control unit 7, where it is compared with the setting profile data, which is another input, and a difference is calculated. Then, control data that cancels the difference is generated.

この制御データがＤ／Ａ変換部８に入力される。ここでアナログ制御信号に変換され、電流制御部９に入力される。このアナログ制御信号が前記のようにＭＯＳＦＥＴのゲートソース間の電圧となるから、結局、フィードバック制御によりドレインソース間の電流が制御され、半導体レーザダイオード１の駆動電流が制御される。 This control data is input to the D / A converter 8. Here, the signal is converted into an analog control signal and input to the current control unit 9. Since this analog control signal becomes the voltage between the gate and the source of the MOSFET as described above, the current between the drain and the source is eventually controlled by feedback control, and the drive current of the semiconductor laser diode 1 is controlled.

このフィードバック制御は電子部品パッケージ６５の全周囲に渡ってレーザ照射が終了するまで継続される。つまり、この間設定プロファイルデータに従ってレーザ溶着装置５１からのレーザ光の出力が制御される。   This feedback control is continued until the laser irradiation is completed over the entire periphery of the electronic component package 65. That is, during this time, the output of the laser beam from the laser welding device 51 is controlled according to the set profile data.

以上のような手順により、設定されたプロファイルでレーザ照射が電子部品パッケージ６５の全周囲に渡って実行され、ケース６１と蓋体６３とが溶着し、電子部品パッケージ６５が気密封止される。   By the procedure as described above, laser irradiation is performed with the set profile over the entire periphery of the electronic component package 65, the case 61 and the lid 63 are welded, and the electronic component package 65 is hermetically sealed.

本発明になる半導体レーザ駆動回路の要部ブロック図である。It is a principal part block diagram of the semiconductor laser drive circuit which becomes this invention. 図１の半導体レーザ駆動回路のレーザ照射経過時間とレーザ出力との関係を表示したレーザ出力プロファイル図である。FIG. 2 is a laser output profile diagram showing a relationship between a laser irradiation elapsed time and a laser output of the semiconductor laser driving circuit of FIG. 1. 本発明になるレーザ溶着装置を用いて電子部品パッケージを気密封止する様子を示す概念図である。It is a conceptual diagram which shows a mode that an electronic component package is airtightly sealed using the laser welding apparatus which becomes this invention. 本発明になるレーザ溶着装置を用いて電子部品パッケージを気密封止する様子を示す概念図で、レーザ光の照射位置の移動を示す図である。It is a conceptual diagram which shows a mode that an electronic component package is airtightly sealed using the laser welding apparatus which becomes this invention, and is a figure which shows the movement of the irradiation position of a laser beam.

符号の説明Explanation of symbols

１ 半導体レーザダイオード、２ 検出部、３ 電流フィードバック部、
４ Ａ／Ｄ変換部、５ プロファイル設定部、６ 設定プロファイルテーブル、
７ ＰＩＤ制御部、８ Ｄ／Ａ変換部、９ 電流制御部、
５１ レーザ溶着装置、６１ ケース、６３ 蓋体 1 semiconductor laser diode, 2 detector, 3 current feedback unit,
4 A / D converter, 5 profile setting unit, 6 setting profile table,
7 PID controller, 8 D / A converter, 9 Current controller,
51 Laser welding device, 61 case, 63 lid

Claims (6)

フィードバック制御することでレーザ出力を予め定められた設定値になるようにしながらレーザ光を照射することで被照射物を加工する半導体レーザの駆動回路であって、
前記設定値は、前記半導体レーザのレーザ出力に対応したレーザ駆動電流値であって、レーザ照射経過時間の関数であることを特徴とする半導体レーザ駆動回路。 A semiconductor laser drive circuit for processing an object to be irradiated by irradiating a laser beam while adjusting a laser output to a predetermined set value by feedback control,
The semiconductor laser drive circuit according to claim 1, wherein the set value is a laser drive current value corresponding to a laser output of the semiconductor laser and is a function of a laser irradiation elapsed time. 前記設定値は、
レーザ照射経過時間とその時点のレーザ出力とからなる指定値を受けて、レーザ照射経過時間の順にこれらのレーザ出力を直線で結び、この間を線形補間してレーザ出力を算出して、この算出値を対応するレーザ駆動電流値に変換して設定されることを特徴とする請求項１記載の半導体レーザ駆動回路。 The set value is
Receive the specified value consisting of the laser irradiation elapsed time and the laser output at that time, connect these laser outputs with a straight line in the order of the laser irradiation elapsed time, and linearly interpolate between them to calculate the laser output, this calculated value 2. The semiconductor laser driving circuit according to claim 1, wherein the semiconductor laser driving circuit is set by converting into a corresponding laser driving current value. 前記半導体レーザ駆動回路であって、
前記レーザ駆動電流を検出する検出部と、
この検出部で検出された駆動電流値と前記設定された電流値とを比較し、前記半導体レーザ駆動電流を設定された電流値とする帰還制御部と、
を具備することを特徴とする請求項１記載の半導体レーザ駆動回路。 The semiconductor laser driving circuit,
A detector for detecting the laser drive current;
A feedback control unit that compares the drive current value detected by the detection unit with the set current value, and sets the semiconductor laser drive current to a set current value;
The semiconductor laser driving circuit according to claim 1, further comprising: 前記検出部の電流センサはホール素子からなることを特徴とする請求項１記載の半導体レーザ駆動回路。   The semiconductor laser driving circuit according to claim 1, wherein the current sensor of the detection unit includes a Hall element. 前記帰還制御部はＰＩＤ制御部からなることを特徴とする請求項１記載の半導体レーザ駆動回路。   The semiconductor laser driving circuit according to claim 1, wherein the feedback control unit includes a PID control unit. 請求項１記載の半導体レーザ駆動回路を備えることを特徴とするレーザ溶着電源。 A laser welding power source comprising the semiconductor laser driving circuit according to claim 1.
JP2007198787A 2007-07-31 2007-07-31 Semiconductor laser drive circuit and laser welding power supply Pending JP2009038081A (en)

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