JP2009033064A5 - Semiconductor device manufacturing apparatus, and semiconductor device manufacturing method - Google Patents
Semiconductor device manufacturing apparatus, and semiconductor device manufacturing method Download PDFInfo
- Publication number
- JP2009033064A5 JP2009033064A5 JP2007198081A JP2007198081A JP2009033064A5 JP 2009033064 A5 JP2009033064 A5 JP 2009033064A5 JP 2007198081 A JP2007198081 A JP 2007198081A JP 2007198081 A JP2007198081 A JP 2007198081A JP 2009033064 A5 JP2009033064 A5 JP 2009033064A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- processing
- device manufacturing
- anode
- grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims 6
- 239000004065 semiconductor Substances 0.000 title claims 6
- 210000002381 Plasma Anatomy 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 4
- 238000000034 method Methods 0.000 claims 2
Claims (3)
プラズマを発生するプラズマ発生室と、
前記プラズマ発生室で生成されたプラズマから電子を集束させるグリッドと、
前記グリッドで集束させた電子を加速させるアノードと、
前記アノードで加速させた電子が導入される処理室と、
前記グリッドと前記処理室との間に設けられ正の電圧を印加される制御電極と、
を備え、
前記処理室内に導入される加速電子により該処理室内のガスをプラズマ化して前記被処理基板を処理する半導体デバイス製造装置。 In a semiconductor device manufacturing apparatus for processing a substrate to be processed,
A plasma generation chamber for generating plasma,
A grid for focusing electrons from the plasma generated in the plasma generation chamber;
An anode for accelerating electrons focused by the grid;
A processing chamber into which the electrons accelerated by the anode are introduced;
A control electrode provided between the grid and the processing chamber to which a positive voltage is applied;
Equipped with
The semiconductor device manufacturing apparatus which processes the to-be-processed substrate by plasma-izing the gas in the processing chamber by the accelerated electrons introduced into the processing chamber.
グリッドによりプラズマ発生室にて発生させたプラズマ中の電子を収束し、前記処理室内にアノードにより加速させた前記電子を導入することにより前記処理室内のガスをプラズマ化して前記被処理基板を処理する処理工程と、を有し、The grid in the plasma generation chamber converges the electrons generated in the plasma generation chamber, and the electron accelerated by the anode is introduced into the processing chamber to plasma the gas in the processing chamber to process the processing substrate Processing steps, and
前記処理工程は、前記グリッドと前記アノードとの間に設けられた制御電極に正の電圧を印加する工程を含む半導体デバイスの製造方法。A method of manufacturing a semiconductor device, wherein the processing step includes the step of applying a positive voltage to a control electrode provided between the grid and the anode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007198081A JP2009033064A (en) | 2007-07-30 | 2007-07-30 | Semiconductor device manufacturing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007198081A JP2009033064A (en) | 2007-07-30 | 2007-07-30 | Semiconductor device manufacturing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009033064A JP2009033064A (en) | 2009-02-12 |
| JP2009033064A5 true JP2009033064A5 (en) | 2010-08-19 |
Family
ID=40403213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007198081A Pending JP2009033064A (en) | 2007-07-30 | 2007-07-30 | Semiconductor device manufacturing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009033064A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110408912A (en) * | 2019-09-11 | 2019-11-05 | 光驰科技(上海)有限公司 | A kind of multiple-piece rotating plasma enhancing atomic layer deposition film formation device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2860253B2 (en) * | 1994-06-27 | 1999-02-24 | 理化学研究所 | Electron beam excited plasma generator |
| JP3595819B2 (en) * | 1994-06-27 | 2004-12-02 | 独立行政法人理化学研究所 | Plasma CVD method and apparatus |
| JP2001313257A (en) * | 2000-04-28 | 2001-11-09 | Mitsubishi Heavy Ind Ltd | Method for producing high quality silicon based thin film |
-
2007
- 2007-07-30 JP JP2007198081A patent/JP2009033064A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2016029642A5 (en) | ||
| JP2008500729A5 (en) | ||
| KR20180084647A (en) | Plasma processing apparatus | |
| JP2016076621A5 (en) | ||
| ATE518409T1 (en) | APPARATUS AND PROCESS FOR GENERATING, ACCELERATING AND SPREADING BEAMS OF ELECTRONS AND PLASMA | |
| JP6220749B2 (en) | Ion gun, ion milling apparatus, and ion milling method | |
| JP2014525982A5 (en) | ||
| US10192750B2 (en) | Plasma processing method | |
| JP5607760B2 (en) | CVD apparatus and CVD method | |
| KR20080067966A (en) | Thin film forming apparatus | |
| JP2009068105A (en) | Film coating system and isolating device thereof | |
| JP5415853B2 (en) | Surface treatment method | |
| JP2009033064A5 (en) | Semiconductor device manufacturing apparatus, and semiconductor device manufacturing method | |
| CN204497191U (en) | A kind of Kaufman power supply with anti-static coating | |
| JP5224347B2 (en) | Method for forming metal thin film on spectroscopic sample for scanning electron microscope | |
| JP2015088218A (en) | Ion beam processing apparatus and neutralizer | |
| JP4984285B2 (en) | High density plasma processing equipment | |
| JP2010157483A (en) | Plasma generating apparatus | |
| JP5649153B2 (en) | Plasma processing apparatus and plasma processing method | |
| JP2012227278A5 (en) | ||
| JP5962979B2 (en) | Deposition equipment | |
| JP2009228032A (en) | Plasma processing method and plasma processing apparatus | |
| KR20110027900A (en) | Apparatus for generating hollow cathode plasma and apparatus for treating substrate by hollow cathode plasma | |
| JP2009001898A (en) | Vacuum treatment method and vacuum treatment device | |
| Kotosonova et al. | Studying the accuracy of the pattern transfer during electron-and ion-induced deposition of tungsten |