JP2009027205A5 - - Google Patents
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- Publication number
- JP2009027205A5 JP2009027205A5 JP2008285969A JP2008285969A JP2009027205A5 JP 2009027205 A5 JP2009027205 A5 JP 2009027205A5 JP 2008285969 A JP2008285969 A JP 2008285969A JP 2008285969 A JP2008285969 A JP 2008285969A JP 2009027205 A5 JP2009027205 A5 JP 2009027205A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- current blocking
- convex portion
- blocking layer
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000903 blocking effect Effects 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 10
- 238000005253 cladding Methods 0.000 claims 7
- 239000002184 metal Substances 0.000 claims 6
- 230000004927 fusion Effects 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008285969A JP4883536B2 (ja) | 2008-11-06 | 2008-11-06 | 半導体レーザ素子および半導体レーザ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008285969A JP4883536B2 (ja) | 2008-11-06 | 2008-11-06 | 半導体レーザ素子および半導体レーザ装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003336765A Division JP4286097B2 (ja) | 2003-09-29 | 2003-09-29 | 半導体レーザ素子および半導体レーザ装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009027205A JP2009027205A (ja) | 2009-02-05 |
| JP2009027205A5 true JP2009027205A5 (enrdf_load_stackoverflow) | 2010-03-25 |
| JP4883536B2 JP4883536B2 (ja) | 2012-02-22 |
Family
ID=40398646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008285969A Expired - Lifetime JP4883536B2 (ja) | 2008-11-06 | 2008-11-06 | 半導体レーザ素子および半導体レーザ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4883536B2 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010206071A (ja) * | 2009-03-05 | 2010-09-16 | Sony Corp | 半導体レーザ素子 |
| JP2013021022A (ja) * | 2011-07-07 | 2013-01-31 | Sumitomo Electric Ind Ltd | 半導体レーザ素子 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0728102B2 (ja) * | 1988-12-08 | 1995-03-29 | 松下電器産業株式会社 | 半導体レーザおよびその製造方法 |
| US5088099A (en) * | 1990-12-20 | 1992-02-11 | At&T Bell Laboratories | Apparatus comprising a laser adapted for emission of single mode radiation having low transverse divergence |
| JPH04291781A (ja) * | 1991-03-20 | 1992-10-15 | Fujitsu Ltd | 光半導体装置及びその製造方法 |
| KR960014732B1 (ko) * | 1992-12-22 | 1996-10-19 | 양승택 | Rwg형 반도체 레이저장치 및 제조방법 |
| JPH08111565A (ja) * | 1994-10-12 | 1996-04-30 | Nippon Telegr & Teleph Corp <Ntt> | 半導体光素子および製造方法 |
| JPH08220358A (ja) * | 1995-02-09 | 1996-08-30 | Hitachi Ltd | 導波路型光素子 |
| JPH11145558A (ja) * | 1997-11-05 | 1999-05-28 | Hitachi Ltd | 半導体光素子、送受信モジュールおよび光通信システム |
| JP3864634B2 (ja) * | 1998-09-25 | 2007-01-10 | 三菱化学株式会社 | 半導体発光装置及びその製造方法 |
| WO2001039342A1 (fr) * | 1999-11-22 | 2001-05-31 | Sony Corporation | Element electroluminescent a semi-conducteur |
| WO2001047076A2 (en) * | 1999-12-20 | 2001-06-28 | Corning Lasertron, Inc. | Wide ridge pump laser |
| JP2003069153A (ja) * | 2001-08-29 | 2003-03-07 | Hitachi Ltd | 半導体光デバイス及び集積型光半導体装置 |
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2008
- 2008-11-06 JP JP2008285969A patent/JP4883536B2/ja not_active Expired - Lifetime