JP2009019991A - Substrate temperature measurement device for anodic bonding device, and method for diagnosis of anodic bonding device with the use of the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To measure change of temperature of a glass substrate and a semiconductor substrate under an environment approximately the same as that in anodic bonding. <P>SOLUTION: This substrate temperature measurement device comprises a glass substrate 10 for anodic bonding and a plurality of thermocouples 16 ... 16. The glass substrate 10 includes a flat face having formed thereon grooves 12 ... 12 each in which a temperature measurement contact point of each thermocouple 16 ... 16 and a part of a thermocouple element wire continuous from the temperature measurement contact point to an edge of the glass substrate 10 are embedded. At least the temperature measurement contact point is fixed to the inner section of each groove 12 ... 12 including the inner wall thereof by an inorganic bonding agent. Before and after the anodic bonding, the temperature measurement contact point, the part of the thermocouple element wire and the bonding agent are not protruding from the flat face. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate temperature measuring apparatus for an anodic bonding apparatus and a diagnostic method for an anodic bonding apparatus using the measuring apparatus.

  Anodic bonding is a technique that is currently widely used in the field of MEMS (Micro Electro Mechanical Systems). However, the optimization of the joining conditions is often based on empirical understanding. In particular, it can be said that the bonding temperature, which is one of the main bonding condition factors of anodic bonding, is a prime example. Anodic bonding is used, for example, as a technique for bonding silicon substrates and glass, but due to the peculiarity of bonding dissimilar substrates, it is not possible to directly monitor the temperature change of each substrate in the actual bonding process in time series. Not done so far. Therefore, the cooling time at the start of voltage application and after the voltage application is stopped in the actual production process is also determined based on empirical rules.

On the other hand, some techniques aimed at directly measuring the temperature of the substrate have been proposed (see, for example, Patent Documents 1 to 3). However, since these means are based on the idea of measuring the temperature of a single substrate, they cannot be applied at all when bonding dissimilar substrates such as anodic bonding.
Japanese Patent Laid-Open No. 11-51776 Japanese Patent Laid-Open No. 2004-4096 JP 2006-138737 A

  Generally, the temperature condition at the time of anodic bonding is performed only by managing the temperature of the heater on which each substrate is placed. Therefore, as described above, in anodic bonding for bonding different kinds of substrates, monitoring the temperature of the heater itself does not always reflect the state of each substrate. That is, since the actual temperature of each substrate is not directly measured, it is impossible to accurately know the time required for each substrate to reach the set temperature of the heater. Furthermore, for example, since the temperature rise or cooling rate differs between a semiconductor substrate and a glass substrate, it is extremely difficult to optimize the temperature condition of each substrate only by measuring the temperature of the heater.

  For this reason, in an actual production process, it is necessary to wait for an unnecessarily long time after reaching the set temperature of the heater or after stopping the voltage application, for reasons such as an improvement in yield. This leads to a delay in the so-called tact time, and the productivity is greatly reduced.

  In addition, even if the substrates for direct measurement of simple substrates described as background art are measured in a state where they are forcibly brought into contact with each other so as to resemble them during anodic bonding, they are accurate due to the space interposed between the substrates. Temperature cannot be measured. In particular, when anodic bonding is performed under low pressure conditions, the thermal conductivity of the space is extremely reduced, so even if the temperature profile of the heater is set to the same conditions as the actual anodic bonding conditions, Accurate temperature measurement is virtually impossible.

  By solving such technical problems, the present invention enables direct measurement of each substrate temperature in a substrate installation environment in an anodic bonding apparatus, which has been considered difficult until now, and increases the temperature of each substrate. This greatly contributes to the realization of optimization of temperature or cooling time. In order to directly monitor the temporal temperature change of each substrate during anodic bonding, the inventors need a measuring device that can measure in a state substantially the same as the bonding state of each substrate during anodic bonding. I thought. Therefore, the inventors energetically studied a structure for enabling anodic bonding in a state where temperature measuring means is provided on at least one of the two types of substrates to be actually bonded. As a result, a structure has been found in which the volume and number of voids interposed between the substrates after anodic bonding are reduced to an extent comparable to that of an actual product, and the present invention has been completed.

  A glass substrate temperature measuring device for an anodic bonding apparatus according to the present invention includes a glass substrate for anodic bonding and a plurality of thermocouples, and the glass substrate is formed from the temperature measuring contact of the thermocouple and the temperature measuring contact. It has a flat surface on which a plurality of grooves in which a part of thermocouple wires continuous to the end of the glass substrate are embedded are formed. Further, at least the above-mentioned temperature measuring contacts are fixed by an inorganic fixing agent in the inside including the inner wall surface of each of the above-mentioned grooves, and before and after anodic bonding, the above-mentioned temperature measuring contacts and some thermocouple wires. And the sticking agent does not protrude from the flat surface.

  According to this glass substrate temperature measuring apparatus, it becomes possible to measure the temperature change of the glass substrate under the special situation of anodic bonding. Specifically, the glass substrate temperature measuring device and a semiconductor substrate (for example, a silicon substrate) can be anodically bonded so as to suppress generation of voids between the substrates. As a result, the temperature profile of the glass substrate can be measured in an environment that approximates the actual bonding state of the substrates. Therefore, it becomes possible to optimize the temperature condition of the heater at the time of anodic bonding. In addition, the bonding substrate in which the thermocouple is incorporated can be used as one of diagnostic means for the temperature profile of the glass substrate during maintenance of the anodic bonding apparatus, for example.

  A semiconductor substrate temperature measuring apparatus for an anodic bonding apparatus according to the present invention is composed of a semiconductor substrate for anodic bonding and a plurality of thermocouples, and the semiconductor substrate is formed from the temperature measuring contact of the thermocouple and the temperature measuring contact. It has a flat surface on which a plurality of grooves in which a part of thermocouple strands continuous to the end of the semiconductor substrate are embedded are formed. Furthermore, at least the above-mentioned temperature measuring contacts are fixed inside the above-mentioned grooves except for the inner wall surface by an inorganic fixing agent, and before and after anodic bonding, the above-mentioned temperature measuring contacts and some thermocouple wires. And the sticking agent does not protrude from the flat surface.

  According to this semiconductor substrate temperature measuring apparatus, it becomes possible to measure a temperature change of the semiconductor substrate under a special situation of anodic bonding. Specifically, the semiconductor substrate temperature measuring device and the glass substrate can be anodically bonded so as to suppress generation of voids between the substrates. As a result, the temperature profile of the semiconductor substrate can be measured in an environment that approximates the actual bonding state of each substrate. Therefore, it becomes possible to optimize the temperature condition of the heater at the time of anodic bonding. Further, the bonding substrate in which the thermocouple is incorporated can be used as one of diagnostic means for the temperature profile of the semiconductor substrate during maintenance of the anodic bonding apparatus, for example. In addition, since the measuring object is a semiconductor substrate, when the temperature measuring contact of the thermocouple is in contact with the inner wall surface of the groove, the measurement accuracy is reduced or measurement is impossible. Therefore, the position of the temperature measuring contact is fixed so as not to contact the inner wall of the groove.

  Moreover, another glass substrate temperature measuring device for an anodic bonding apparatus of the present invention is composed of an anodic bonding glass substrate and a plurality of thermocouples, and the glass substrate has a bonding surface on which a plurality of grooves are formed, It has a surface opposite to the joint surface in which a recess corresponding to each of the aforementioned grooves is formed, and a pair of through holes that penetrate the recess from a part of each of the aforementioned grooves. Further, each of the thermocouples described above has a pair of thermocouple wires inserted into the pair of through holes, so that the temperature measuring contact of the thermocouple is positioned between the pair of through holes. The inside of the concave portion including the inner wall surface is fixed with an inorganic fixing agent, and a part of the thermocouple wire is continuously embedded in each of the above-described grooves to the end of the above-described glass substrate. And before and after anodic bonding, the above-mentioned temperature measuring contact, some thermocouple strands, and the fixing agent do not protrude from the above-mentioned bonding surface.

  According to this glass substrate temperature measuring apparatus, it becomes possible to measure the temperature change of the glass substrate under the special situation of anodic bonding. Specifically, the glass substrate temperature measuring device and a semiconductor substrate (for example, a silicon substrate) can be anodically bonded so as to suppress generation of voids between the substrates. As a result, the temperature profile of the glass substrate can be measured in an environment that approximates the actual bonding state of the substrates. Therefore, it becomes possible to optimize the temperature condition of the heater at the time of anodic bonding. In addition, the bonded substrate in which the thermocouple is incorporated can be used as one of diagnostic means for the temperature profile of the glass substrate during maintenance of the anodic bonding apparatus, for example. Further, since the pair of thermocouple wires are inserted into the pair of through holes described above, the temperature measuring contact and the pair of thermocouple wires are easily fixed inside the groove, and stability during anodic bonding is improved. .

  Further, another semiconductor substrate temperature measuring device for an anodic bonding apparatus according to the present invention includes an anodic bonding semiconductor substrate and a plurality of thermocouples, and the semiconductor substrate has a bonding surface on which a plurality of grooves are formed, It has a surface opposite to the joint surface in which a recess corresponding to each of the aforementioned grooves is formed, and a pair of through holes that penetrate the recess from a part of each of the aforementioned grooves. Further, each of the thermocouples described above has a pair of thermocouple wires inserted into the pair of through holes, so that the temperature measuring contact of the thermocouple is positioned between the pair of through holes. The inside of the recess except for the inner wall surface is fixed by an inorganic fixing agent, and a part of the thermocouple wire is continuously embedded in each of the above-mentioned grooves to the end of the above-described semiconductor substrate. And before and after anodic bonding, the above-mentioned temperature measuring contact, some thermocouple strands, and the fixing agent do not protrude from the above-mentioned bonding surface.

  According to this semiconductor substrate temperature measuring apparatus, it becomes possible to measure a temperature change of the semiconductor substrate under a special situation of anodic bonding. Specifically, the semiconductor substrate temperature measuring device and the glass substrate can be anodically bonded so as to suppress generation of voids between the substrates. As a result, the temperature profile of the semiconductor substrate can be measured in an environment that approximates the actual bonding state of each substrate. Therefore, it becomes possible to optimize the temperature condition of the heater at the time of anodic bonding. Further, the bonding substrate in which the thermocouple is incorporated can be used as one of diagnostic means for the temperature profile of the semiconductor substrate during maintenance of the anodic bonding apparatus, for example. In addition, since the measuring object is a semiconductor substrate, when the temperature measuring contact of the thermocouple is in contact with the inner wall surface of the groove, the measurement accuracy is reduced or measurement is impossible. Therefore, the position of the temperature measuring contact is fixed so as not to contact the inner wall of the groove. Further, since the pair of thermocouple wires are inserted into the pair of through holes described above, the temperature measuring contact and the pair of thermocouple wires are easily fixed inside the groove, and stability during anodic bonding is improved. .

  The method for diagnosing an anodic bonding apparatus according to the present invention is for prototyping or production with respect to a substrate temperature measuring apparatus obtained by anodic bonding any one of the above glass substrate temperature measuring apparatuses and any one of the above semiconductor substrate temperature measuring apparatuses. The glass substrate and the semiconductor described above are processed under the same conditions as those of the anodic bonding process excluding voltage application, and at least one period selected from the group before, during, and after the above processing. Each temperature of the substrate is measured a plurality of times regularly or irregularly.

  According to this diagnostic method, it is possible to directly measure the temperature changes of each of the two types of anodic bonded substrates accompanying the temperature change of the heater of the anodic bonding apparatus. Easy to grasp. For example, according to this diagnostic method, since it is possible to know the time required for each substrate that has been anodically bonded to reach the set temperature of the heater, it is extremely possible to grasp and manage abnormalities in the temperature profile of the anodic bonding apparatus. It becomes easy. In this diagnostic method, no voltage is applied during anodic bonding. This is because if a voltage as high as several hundred volts is applied when the temperature of each substrate is being measured, there may be a problem that accurate temperature measurement cannot be performed due to electrical noise.

  By the way, in order to be able to simultaneously measure the temperatures of both of the two types of substrates to be anodically bonded, any one of the above glass substrate temperature measuring devices and any of the above semiconductor substrate temperature measuring devices may be anodically bonded. This is a preferred embodiment. At this time, it is preferable to anodic bond the flat surfaces on which the grooves of each substrate are formed. This is because there is a risk that a space will be formed between the heater and each substrate if the thermocouple wire is separated from the groove or if it protrudes from the substrate surface and the flatness of each substrate is impaired. It is. In other words, if each substrate temperature measuring device of the present invention is used, flat surfaces with grooves can be anodically bonded, so that a part of the thermocouple embedded in each substrate is confined between the substrates. Can do. Such a measuring device is structurally stable and can withstand a plurality of measurements, and thus can be widely used for diagnosis of the device state during maintenance.

  According to the glass substrate temperature measuring device for one anodic bonding apparatus of the present invention, it becomes possible to measure the temperature change of the glass substrate under a special situation called anodic bonding. Specifically, the glass substrate temperature measuring device and a semiconductor substrate (for example, a silicon substrate) can be anodically bonded so as to suppress generation of voids between the substrates. As a result, the temperature profile of the glass substrate can be measured in an environment that approximates the actual bonding state of the substrates. In addition, according to the semiconductor substrate temperature measuring apparatus for one anodic bonding apparatus of the present invention, it becomes possible to measure a temperature change of the semiconductor substrate under a special situation called anodic bonding. Specifically, the semiconductor substrate temperature measuring device and the glass substrate can be anodically bonded so as to suppress generation of voids between the substrates. As a result, the temperature profile of the semiconductor substrate can be measured in an environment that approximates the actual bonding state of each substrate. In any of the above inventions, it becomes easy to optimize the temperature condition of the heater during anodic bonding. In addition, the bonding substrate in which the thermocouple is incorporated can be used as one of diagnostic means for the temperature profile of the glass substrate during maintenance of the anodic bonding apparatus, for example. Furthermore, according to the anodic bonding apparatus diagnosis method of the present invention, it is possible to directly measure the temperature changes of each of the two types of anodic bonded substrates accompanying the temperature change of the heater of the anodic bonding apparatus. Therefore, it becomes easy to grasp the malfunction of the device.

  Next, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In this description, common parts are denoted by common reference symbols throughout the drawings unless otherwise specified. In the drawings, the elements of the present embodiment are not necessarily shown to scale. Moreover, in order to make each drawing easy to see, some constituent members or symbols may be omitted.

<First Embodiment>
FIG. 1 is a plan view of a glass substrate temperature measuring apparatus 100 for one anodic bonding apparatus in the present embodiment, and FIG. 2 is an enlarged view of a portion X shown in FIG. FIG. 3 is a cross-sectional view taken along line AA in FIG.

  A glass substrate temperature measuring apparatus 100 for an anodic bonding apparatus according to the present embodiment shown in FIGS. 1 to 3 includes thermocouples 16, 12 in the grooves 12, 12,. 16,..., 16 are fixed in a state of being embedded. Here, as shown in FIG. 1, each of the grooves 12, 12,..., 12 is continuously formed from a region to be measured to an end portion of the substrate serving as an orientation flat of the glass substrate 10. Yes. Further, the embedded thermocouples 16, 16,..., 16 are fixed so as not to protrude from a flat surface in the glass substrate 10 where the grooves 12, 12,.

  As shown in FIG. 2, one thermocouple 16 includes a pair of thermocouple strands 16a and 16a and a temperature measuring contact 16b. Moreover, the thermocouple strands 16a and 16a are covered with the heat resistant coating | covering material 17 as one preferable aspect. Here, when the covering material 17 is used, not only the embedded thermocouple 16 but also the covering material 17 is formed from a flat surface in which the grooves 12, 12,... It is fixed so that it does not protrude. Further, as shown in FIG. 3, the tip of one groove 12 is dug deeper than the other region, and the fixing agent 14 so that the temperature measuring contact 16b is located inside the deep groove 12a. It is fixed by. More specifically, the measurement contact 16 b is fixed so as not to contact the inner wall surface of the groove 12.

  Here, the sticking agent 14 is an inorganic sticking agent, more specifically, a known alumina silica-based refractory sticking agent. In this embodiment, the thickness of the glass substrate 10 is about 2 mm. The width of one groove 12 is about 2 mm. Of the depth of one groove 12, the region where the temperature measuring contact 16b is embedded is about 1.8 mm, and the depth of the groove 12 in the other region is about 1.5 mm. Further, as shown in FIG. 1, in the present embodiment, four measurement regions and one measurement region are scattered in the periphery of the glass substrate 10 and in the center.

  The grooves 12, 12,..., 12 of the glass substrate 10 of the present embodiment are formed by a known etching process. For example, in this embodiment, after a metal mask is formed on the glass substrate 10 by a known sputtering technique and a known photolithography technique, the groove 12 of this embodiment is formed by a wet etching process using a known glass etching solution. , 12,..., 12 are formed. The grooves 12, 12,..., 12 are also formed by a known sandblasting process.

  The glass substrate temperature measuring apparatus 100 of this embodiment is anodically bonded to a commercially available silicon substrate under known conditions that are appropriately selected. At this time, the surface of the glass substrate 10 in which the groove of the glass substrate temperature measuring device 100 is not formed has flatness, and a part of the embedded thermocouple 16 and the covering material 17 are separated from the flat surface. It does not protrude. Therefore, even if the surface of the glass substrate 10 on the part where the thermocouple 16 and the covering material 17 are embedded and the surface of the silicon substrate are anodically bonded, the volume and number of voids interposed between the substrates after the anodic bonding Is reduced to an extent that is not inferior to the actual product. Even if the thermocouple 16 is not fixed by the fixing agent 14 after anodic bonding because the amount of the fixing agent 14 filled is small, the thermocouple 16 is fixed between the silicon substrates. Therefore, the surface of the glass substrate 10 on the side where the thermocouple 16 and the covering material 17 are embedded is preferably bonded.

  FIG. 4 is a schematic configuration diagram of one anodic bonding apparatus 600 in the present embodiment. The anodic bonding apparatus 600 includes a port 35 for taking out a part of the thermocouple to the outside. A first heater / electrode part 31 and a second heater / electrode part 32 are provided in the chamber 30 which is a sealed space. The DC power source 37 applies a DC voltage to the first heater / electrode unit 31 and the second heater / electrode unit 32, and the respective control units 34 a of the first heater / electrode unit 31 and the second heater / electrode unit 32. , 34b control the temperature of the heater. Furthermore, the anodic bonding apparatus 600 is connected to an exhaust pump 36 for reducing the pressure in the chamber 30.

  Here, for example, the terminals or connector portions of the plurality of thermocouples 16, 16,..., 16 of the glass substrate temperature measuring device 100 bonded to the silicon substrate 33 are ports 35 provided in the anodic bonding device 600. And is connected to a known temperature measurement data display unit (and / or recording unit) 38.

  As described above, the glass substrate temperature measuring device 100 bonded to the silicon substrate is used for measuring the glass substrate temperature during heating or cooling in the anodic bonding device, or for diagnosing whether or not the temperature profile of the glass substrate is abnormal. sell. More specifically, if the glass substrate temperature measuring apparatus 100 is used, the temperature profile of the glass substrate 10 can be measured in an environment that approximates the actual bonding state of each substrate. As a result, it is possible to optimize the temperature condition of the heater during anodic bonding. Further, the anodic bonding apparatus is appropriately maintained by measuring the temperature of the glass substrate 10 regularly or irregularly at least once during at least one period before, between, and after the process. be able to. That is, the measurement before or after the process is useful for confirming the presence or absence of abnormality before and after the operation of the anodic bonding apparatus. Moreover, measuring between processes has an advantage that the temperature profile during heating of the glass substrate, the stability during heat retention, or the presence or absence of abnormality in the temperature profile during cooling can be confirmed.

  Here, of the anodic bonding conditions, all the conditions (for example, the chamber pressure and the heating condition by the heater) except the voltage application condition are matched with the actual trial production or production conditions. On the other hand, no voltage is applied during the aforementioned diagnosis. This is because if a high DC voltage of several hundred volts is applied when the temperature of the glass substrate is being measured, there may be a problem that accurate temperature measurement cannot be performed due to electrical noise.

  On the other hand, the semiconductor substrate temperature measuring apparatus for one anodic bonding apparatus in this embodiment has the same structure as the glass substrate temperature measuring apparatus 100 shown in FIGS. Accordingly, the structure and components shown in FIGS. 1 to 3 are substantially the same as the structure and components of the semiconductor substrate temperature measuring device of this embodiment except for a part. The groove of the silicon substrate in which a part of the thermocouple is embedded can be formed by a known wet etching process or a known dry etching process. As an example of dry etching, a known anisotropic etching technique using a plasma process is applied.

  The difference in structure and constituent members between the semiconductor substrate temperature measuring device of the present embodiment and the glass substrate temperature measuring device 100 described above is the material of the substrate and the material of the fixing agent. The material of the substrate used in the semiconductor substrate temperature measuring device of this embodiment is silicon, and the fixing agent is a silica-based refractory fixing agent. The differences in the manufacturing method of each device are as described above.

  Moreover, the semiconductor substrate temperature measuring device of this embodiment is anodically bonded to a commercially available glass substrate. At this time, the surface of the semiconductor substrate in which the groove of the semiconductor substrate temperature measuring device is not formed has flatness, and a part of the embedded thermocouple and the covering material do not protrude from the flat surface. Therefore, even if the surface of the semiconductor substrate on the side where a part of the thermocouple and the coating material are embedded and the surface of the glass substrate are anodically bonded, the volume and number of voids interposed between the substrates after the anodic bonding are actually Reduced to a level that is almost the same as the product. Even if the thermocouple is not fixed by the fixing agent after anodic bonding because the amount of the fixing agent filled is small, the fixing of the thermocouple sandwiched between the glass substrate is practically maintained. Therefore, it is preferable that the surface of the semiconductor substrate on the side where the thermocouple and the covering material are embedded is bonded.

  The semiconductor substrate temperature measuring device bonded to the glass substrate is used, for example, for measuring the semiconductor substrate temperature at the time of heating or cooling in the above-described anodic bonding device 600, or for diagnosing the presence or absence of the temperature profile of the semiconductor substrate. sell. More specifically, if these conditions are adopted, the temperature profile of the semiconductor substrate can be measured in an environment that approximates the actual bonding state of each substrate. As a result, it is possible to optimize the temperature condition of the heater during anodic bonding. In addition, the anodic bonding apparatus is appropriately maintained by measuring the temperature of the semiconductor substrate regularly or irregularly at least once during at least one period before, between, and after the process. Can do. In addition, all conditions (for example, chamber pressure, heating conditions by a heater) other than the voltage application condition among the anodic bonding conditions are matched with the actual trial production or production conditions. On the other hand, no voltage is applied. This is because if a high DC voltage of several hundred volts is applied when the temperature of the semiconductor substrate is being measured, there may be a problem that accurate temperature measurement cannot be performed due to electrical noise.

<Second Embodiment>
FIG. 5 is a plan view of a glass substrate temperature measuring apparatus 200 for one anodic bonding apparatus in the present embodiment, and FIG. 6 is an enlarged view of a Y portion shown in FIG. FIG. 7 is a sectional view taken along line BB in FIG. This embodiment has the same configuration as that of the first embodiment except for the structure of the end portions of the grooves 12, 12,..., 12 represented by the Y portion in FIG. A part of the manufacturing method is the same as that of the first embodiment. Therefore, the description which overlaps with 1st Embodiment is abbreviate | omitted.

  As shown in FIGS. 5 to 7, the glass substrate 10 has circular recesses 19, 19,..., 19 formed on the surface opposite to the surface on which the grooves 12, 12. . Further, the through holes 18a and 18b connect a part of one groove 12 and a part of one recess 19 with a space therebetween. The pair of thermocouple wires 16a, 16a are inserted into the pair of through holes 18a, 18b from the surface of the glass substrate 10 where the recesses 19, 19,. Most of the inserted pair of thermocouple wires 16a, 16a are embedded in the grooves 12, 12,..., 12 up to the end of the glass substrate 10, preferably covered with the covering material 17. ing. In this embodiment, the thickness of the glass substrate 10 is about 2 mm, and the width of one groove 12 is about 2 mm. Moreover, the depth of one groove | channel 12 is about 1.5 mm over the whole region, and the depth of one recessed part 19 is about 0.2 mm. In the present embodiment, four measurement regions and one measurement region are scattered in the periphery of the glass substrate 10.

  The thermocouple wires 16a, 16a and the temperature measuring contact 16b are fixed inside the grooves 12, 12,..., 12 and the recesses 19, 19,. Similar to the first embodiment, when the covering material 17 is used, not only the embedded thermocouple 16 but also the covering material 17 includes the grooves 12, 12,... , 19..., 19 are fixed so as not to protrude from a flat surface where they are not formed. In consideration of the anodic bonding of the glass substrate temperature measuring device 200 and the silicon substrate, even if the fixing agent 14 is relatively elastic, the glass substrate 10 is similar to the thermocouple 16 and the covering material 17. It is preferable that the grooves 12, 12,..., 12 or the recesses 19, 19,. This also applies to other than this embodiment.

  The recesses 19, 19,..., 19 of the glass substrate 10 of the present embodiment are formed by a known etching process. For example, in this embodiment, after a metal mask is formed on the glass substrate 10 by a known sputtering technique and a known photolithography technique, the concave portion 19 of this embodiment is formed by a wet etching process using a known glass etching solution. , 19,..., 19 are formed. The recesses 19, 19,..., 19 are also formed by a known sandblasting process.

  The glass substrate temperature measuring apparatus 200 of this embodiment is anodically bonded to a commercially available silicon substrate. At this time, the surface of the glass substrate 10 in which the groove of the glass substrate temperature measuring device 200 is not formed has flatness, and a part of the embedded thermocouple 16 and the covering material 17 are separated from the flat surface. It does not protrude. Therefore, even if the surface of the glass substrate 10 on the part where the thermocouple 16 and the covering material 17 are embedded and the surface of the silicon substrate are anodically bonded, the volume and number of voids interposed between the substrates after the anodic bonding Is reduced to an extent that is not inferior to the actual product. Even if the thermocouple 16 is not fixed by the fixing agent 14 after anodic bonding because the amount of the fixing agent 14 filled is small, the thermocouple 16 is fixed between the silicon substrates. Therefore, the surface of the glass substrate 10 on the side where the thermocouple 16 and the covering material 17 are embedded is preferably bonded.

  The glass substrate temperature measuring device 200 bonded to the silicon substrate is, for example, similar to the first embodiment, measuring the glass substrate temperature at the time of heating or cooling in the anodic bonding device 600 described above, or measuring the temperature profile of the glass substrate. It can be used for diagnosis of abnormalities. More specifically, if the glass substrate temperature measuring apparatus 200 is used, the temperature profile of the glass substrate 10 can be measured in an environment that approximates the actual bonding state of the substrates. As a result, it is possible to optimize the temperature condition of the heater during anodic bonding. It is possible to appropriately maintain the anodic bonding apparatus by measuring the temperature of the glass substrate 10 regularly or irregularly several times before, between and after the process. it can. The glass substrate temperature measuring device 200 is superior to the glass substrate temperature measuring device 100 of the first embodiment in that the thermocouples 16, 16,..., 16 are fixed by grooves or recesses. Yes.

  On the other hand, the semiconductor substrate temperature measuring apparatus 300 for one anodic bonding apparatus in the present embodiment has the same structure as the glass substrate temperature measuring apparatus 200 shown in FIGS. Therefore, the structure and components shown in FIG. 5 to FIG. 7 are substantially the same as the structure and components of the semiconductor substrate temperature measuring device of this embodiment except for a part. The groove and the recess of the silicon substrate in which a part of the thermocouple is embedded can be formed by a known wet etching process or a known dry etching process. As an example of dry etching, a known anisotropic etching technique using a plasma process is applied.

  The difference in structure and constituent members between the semiconductor substrate temperature measuring device 300 of the present embodiment and the glass substrate temperature measuring device 200 described above is the material of the substrate and the material of the fixing agent. The material of the substrate used in the semiconductor substrate temperature measuring apparatus 300 of this embodiment is silicon, and the fixing agent is a silica-based refractory fixing agent. The differences in the manufacturing method of each device are as described above.

  Moreover, the semiconductor substrate temperature measuring apparatus 300 of this embodiment is anodically bonded to a commercially available glass substrate. At this time, the surface of the semiconductor substrate on which the groove of the semiconductor substrate temperature measuring apparatus 300 is not formed has flatness, and part of the embedded thermocouple and the covering material do not protrude from the flat surface. . Therefore, even if the surface of the semiconductor substrate on the side where a part of the thermocouple and the coating material are embedded and the surface of the glass substrate are anodically bonded, the volume and number of voids interposed between the substrates after the anodic bonding are actually Reduced to a level that is almost the same as the product. Even if the thermocouple is not fixed by the fixing agent after anodic bonding because the amount of the fixing agent filled is small, the fixing of the thermocouple sandwiched between the glass substrate is practically maintained. Therefore, it is preferable that the surface of the semiconductor substrate on the side where the thermocouple and the covering material are embedded is bonded.

  The semiconductor substrate temperature measuring apparatus 300 bonded to the glass substrate is, for example, similar to the first embodiment, measuring the semiconductor substrate temperature during heating or cooling in the above-described anodic bonding apparatus 600, or measuring the temperature profile of the semiconductor substrate. It can be used for diagnosis of abnormalities. More specifically, if the semiconductor substrate temperature measuring apparatus 300 is used, the temperature profile of the semiconductor substrate can be measured in an environment that approximates the actual bonding state of the respective substrates. As a result, it is possible to optimize the temperature condition of the heater during anodic bonding. In addition, the anodic bonding apparatus is appropriately maintained by measuring the temperature of the semiconductor substrate regularly or irregularly at least once during at least one period before, between, and after the process. Can do.

<Third Embodiment>
FIG. 8 is a plan view of a glass substrate temperature measuring device 400 for one anodic bonding apparatus in the present embodiment, and FIG. 9 is an enlarged view of a Z portion shown in FIG. FIG. 10 is a cross-sectional view taken along the line CC in FIG. This embodiment has the same configuration as the first embodiment except for the number, position, and depth of the grooves 12, 12,... A part of the manufacturing method is the same as that of the first embodiment. Therefore, the description which overlaps with 1st Embodiment is abbreviate | omitted.

  As shown in FIGS. 8 to 10, the glass substrate 10 is formed with two grooves 12 and 12 so that two temperature measuring contacts 16 b and 16 b are arranged in one measurement region (for example, a Z portion). . Further, as shown in FIG. 10, the depths of the two grooves 12, 12 are different from each other. In this embodiment, the thickness of the glass substrate 10 is about 2 mm, and the width of one groove 12 is about 2 mm. The depth of the deeper groove is about 1.8 mm, and the depth of the shallower groove is 1.4 mm. Further, these two grooves are provided to measure a change in temperature in the thickness direction of the glass substrate 10 in one narrow measurement region, so that they are close to each other so as not to cause any trouble in processing. Yes. In the present embodiment, as the measurement region for measuring the temperature change in the thickness direction of the glass substrate 10, four regions and one region in the center are dotted.

  The glass substrate temperature measuring apparatus 400 of this embodiment is anodically bonded to a commercially available silicon substrate. At this time, the surface of the glass substrate 10 on which the groove of the glass substrate temperature measuring device 400 is not formed has flatness, and a part of the embedded thermocouple 16 and the covering material 17 are separated from the flat surface. It does not protrude. Therefore, even if the surface of the glass substrate 10 on the part where the thermocouple 16 and the covering material 17 are embedded and the surface of the silicon substrate are anodically bonded, the volume and number of voids interposed between the substrates after the anodic bonding Is reduced to an extent that is not inferior to the actual product. Even if the thermocouple 16 is not fixed by the fixing agent 14 after anodic bonding because the amount of the fixing agent 14 filled is small, the thermocouple 16 is fixed between the silicon substrates. Therefore, the surface of the glass substrate 10 on the side where the thermocouple 16 and the covering material 17 are embedded is preferably bonded.

  The glass substrate temperature measuring apparatus 400 bonded to the silicon substrate is, for example, similar to the first embodiment, measuring the semiconductor substrate temperature at the time of heating or cooling in the above-described anodic bonding apparatus 600, or measuring the temperature profile of the semiconductor substrate. It can be used for diagnosis of abnormalities. More specifically, if the glass substrate temperature measuring apparatus 400 is used, the temperature profile of the glass substrate 10 can be measured in an environment that approximates the actual bonding state of the substrates. As a result, it is possible to optimize the temperature condition of the heater during anodic bonding. Further, the anodic bonding apparatus is appropriately maintained by measuring the temperature of the glass substrate 10 regularly or irregularly at least once during at least one period before, between, and after the process. be able to. The glass substrate temperature measuring device 400 is superior to the glass substrate temperature measuring device 100 of the first embodiment in that the temperature of a plurality of depths of the glass substrate 10 can be measured. Moreover, in this embodiment, although the groove of two types of depth is formed, it is not limited to this. In consideration of the area of the glass substrate, etc., three or more types of grooves may be formed. In order to examine the change in the thickness direction of the glass substrate in more detail, it is a preferable aspect to form three or more kinds of grooves.

  On the other hand, the semiconductor substrate temperature measuring device for one anodic bonding apparatus in this embodiment has the same structure as the glass substrate temperature measuring device 400 shown in FIGS. Therefore, the structure and components shown in FIGS. 8 to 10 are substantially the same as the structure and components of the semiconductor substrate temperature measuring device of this embodiment except for a part. The groove of the silicon substrate in which a part of the thermocouple is embedded can be formed by a known wet etching process or a known dry etching process. As an example of dry etching, a known anisotropic etching technique using a plasma process is applied.

  The difference in structure and constituent members between the semiconductor substrate temperature measuring device of the present embodiment and the glass substrate temperature measuring device 400 described above is the material of the substrate and the material of the fixing agent. The material of the substrate used in the semiconductor substrate temperature measuring device of this embodiment is silicon, and the fixing agent is a silica-based refractory fixing agent. The differences in the manufacturing method of each device are as described above.

  Moreover, the semiconductor substrate temperature measuring device of this embodiment is anodically bonded to a commercially available glass substrate. At this time, the surface of the semiconductor substrate in which the groove of the semiconductor substrate temperature measuring device is not formed has flatness, and a part of the embedded thermocouple and the covering material do not protrude from the flat surface. Therefore, even if the surface of the semiconductor substrate on the side where a part of the thermocouple and the coating material are embedded and the surface of the glass substrate are anodically bonded, the volume and number of voids interposed between the substrates after the anodic bonding are actually Reduced to a level that is almost the same as the product. Even if the thermocouple is not fixed by the fixing agent after anodic bonding because the amount of the fixing agent filled is small, the fixing of the thermocouple sandwiched between the glass substrate is practically maintained. Therefore, it is preferable that the surface of the semiconductor substrate on the side where the thermocouple and the covering material are embedded is bonded.

  The semiconductor substrate temperature measuring device bonded to the glass substrate is, for example, similar to the first embodiment, measuring the semiconductor substrate temperature at the time of heating or cooling in the above-described anodic bonding device 600, or abnormal temperature profile of the semiconductor substrate. It can be used for the diagnosis of the presence or absence. More specifically, if a semiconductor substrate temperature measuring device is used, the temperature profile of the semiconductor substrate can be measured in an environment that approximates the actual bonding state of the respective substrates. As a result, it is possible to optimize the temperature condition of the heater during anodic bonding. In addition, the anodic bonding apparatus is appropriately maintained by measuring the temperature of the semiconductor substrate regularly or irregularly at least once during at least one period before, between, and after the process. Can do.

<Fourth Embodiment>
FIG. 11 is a plan view of a substrate temperature measuring apparatus 400 for one anodic bonding apparatus according to the present embodiment, and FIG. 12 is a cross-sectional view of a part of the substrate temperature measuring apparatus 500 (corresponding to the DD cross section of FIG. 6). ). The substrate temperature measuring apparatus 400 of this embodiment is obtained by anodic bonding the glass substrate temperature measuring apparatus 200 and the semiconductor substrate temperature measuring apparatus 300 in the second embodiment. Therefore, the description which overlaps with 2nd Embodiment is abbreviate | omitted.

  As shown in FIG. 12, a part of the thermocouple 16 of the glass substrate temperature measuring device 200 and the surface on the side where the coating material 17 is embedded, and a part of the thermocouple 16 of the semiconductor substrate temperature measuring device 300 and the coating material 17 are embedded. The surfaces on the two sides are joined. Part of the embedded thermocouple 16 and the covering material 17 do not protrude from any of the flat surfaces described above. Therefore, even if anodically bonding the surfaces of a part of the thermocouple 16 and the side where the covering material 17 is embedded, the volume and number of voids interposed between the substrates after the anodic bonding are almost the same as the actual product. Reduced to a degree. In the present embodiment, in particular, the surface of the glass substrate 10 on the side where the thermocouple 16 and the covering material 17 are embedded and the surface of the silicon substrate 20 on the side where the thermocouple 16 and the covering material 17 are embedded are bonded. preferable. This is because the substrate temperature measuring apparatus 500 according to this embodiment in which the thermocouple 16 is embedded in two types of substrates maintains the fixed state of the thermocouple 16 as compared with the case where only one substrate is embedded. This is because it becomes difficult.

  The substrate temperature measuring apparatus 500 of this embodiment enables simultaneous measurement of the temperatures of the glass substrate 10 and the semiconductor substrate 20 during heating or cooling in the above-described anodic bonding apparatus 600, for example, as in the first embodiment. . In addition, it is possible to simultaneously diagnose whether or not the temperature profile of each substrate is abnormal. More specifically, by using the substrate temperature measuring apparatus 500 of the present embodiment, it is possible to simultaneously measure the temperature profile of each substrate in an environment that approximates the actual bonding state of each substrate. As a result, it is possible to optimize the temperature condition of the heater during anodic bonding extremely efficiently. In addition, by measuring the temperature of the glass substrate 10 and the semiconductor substrate 20 regularly or irregularly at least once in at least one period before, between, and after the process, the anodic bonding apparatus is Maintenance can be performed more appropriately.

  Although the embodiments of the present invention have been specifically described so far, the above-described embodiments are merely examples for carrying out the present invention. In each of the above-described embodiments, in order to fix the covering material inside the groove, a part of the bottom part of the groove in which the covering material is embedded or a part of the side surface part is filled with the fixing agent, It is not limited to this. For example, by adjusting the width of the groove and the covering material, it is possible to fix the groove inside the groove only by pushing the covering material into the groove without using an adhesive. On the other hand, the groove in the region where the temperature measuring contact is buried is preferably filled with a fixing agent for securely fixing the temperature measuring contact.

  In some of the embodiments described above, one groove is fixed with an adhesive so that the tip portion is dug deeper than the other region, and the temperature measuring contact is located inside the deep groove. However, it is not limited to this. For example, by adjusting the thickness of the covering material and the amount of the fixing agent, the depth of one groove can be made the same throughout the entire region.

  In each of the embodiments described above, in a glass substrate temperature measuring device typified by the glass substrate temperature measuring devices 100, 200, and 300, one measurement contact 16 b does not contact the inner wall surface of one groove 12. However, the present invention is not limited to this. Therefore, even if the measurement contact 16b is fixed so as to contact the inner wall surface of the groove 12, the effect of the present invention is exhibited. From the viewpoint of ease of arrangement of the temperature measuring contact 16b, it is preferable to fix the measuring contact 16b so as to contact the inner wall surface of the groove 12. On the other hand, regarding the semiconductor substrate temperature measuring device of each of the embodiments described above, it is necessary to fix the measurement contact of the thermocouple so as not to contact the inner wall surface of the groove. In other words, since the measurement target is a semiconductor substrate, the measurement accuracy of the thermocouple contact of the thermocouple decreases or becomes impossible to measure when contacting the inner wall surface of the groove.

  Further, in each of the above-described embodiments, the plurality of continuous grooves are formed from the position where the temperature measuring contact is fixed to the end of the glass substrate or the semiconductor substrate, but the present invention is not limited to this. For example, as shown in a glass substrate or semiconductor substrate temperature measuring apparatus 700 in FIG. 13, each groove 12, 12,..., 12 is integrated in the periphery of one substrate to form one groove (or In the case of forming the (concave portion) 42, in other words, even if each of the grooves 12, 12,... It is included in the range of “a plurality of grooves”. As described above, modifications that exist within the scope of the present invention are also included in the claims.

  The present invention is used for optimizing the temperature conditions of an anodic bonding apparatus, diagnosing the presence or absence of abnormalities, or performing maintenance.

It is a top view of the glass substrate temperature measuring apparatus for anodic bonding apparatuses in one embodiment of the present invention. It is an enlarged view of the X part shown in FIG. It is CC sectional drawing in FIG. It is a schematic block diagram of the anodic bonding apparatus in one embodiment of this invention. It is a top view of the glass substrate temperature measuring apparatus for anodic bonding apparatuses in other embodiments of the present invention. FIG. 6 is an enlarged view of a Y portion shown in FIG. 5. It is CC sectional drawing in FIG. It is a top view of the glass substrate temperature measuring apparatus for anodic bonding apparatuses in other embodiments of the present invention. It is an enlarged view of Z part shown in FIG. It is CC sectional drawing in FIG. It is a top view of the substrate temperature measuring apparatus for anodic bonding apparatuses in other embodiments of the present invention. FIG. 5 is a partial cross-sectional view of a substrate temperature measuring apparatus for an anodic bonding apparatus in another embodiment of the present invention. It is a top view of the substrate temperature measuring apparatus for anodic bonding apparatuses in other embodiments of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Glass substrate 12, 22, 42 Groove | channel 14 Adhesive agent 16 Thermocouple 16a Thermocouple strand 16b Temperature measuring contact 17 Coating | covering material 18a, 18b, 28b Through-hole 19,29 Recessed part 20 Semiconductor substrate 30 Chamber 31 1st heater and electrode part 32 Second heater and electrode section 33 Silicon substrate 34a Control section 34b Control section 35 Port 36 Exhaust pump 37 DC power supply 38 Temperature measurement data display section (and / or recording section)
100, 200, 400, 700 Glass substrate temperature measuring device 300 Semiconductor substrate temperature measuring device 500 Substrate temperature measuring device 600 Anodic bonding device

Claims (9)

Consists of a glass substrate for anodic bonding and a plurality of thermocouples,
The glass substrate has a temperature measuring contact of the thermocouple and a flat surface on which a plurality of grooves in which a part of thermocouple strands continuous from the temperature measuring contact to the end of the glass substrate are embedded are formed. ,
At least the temperature measuring contact is fixed to the inside including the inner wall surface of each groove by an inorganic fixing agent, and before and after anodic bonding, the temperature measuring contact, the part of the thermocouple element, and the fixing The glass substrate temperature measuring apparatus for anodic bonding apparatuses in which the agent does not protrude from the flat surface. Consists of a semiconductor substrate for anodic bonding and a plurality of thermocouples,
The semiconductor substrate has a temperature measuring contact of the thermocouple and a flat surface on which a plurality of grooves in which a part of thermocouple strands continuous from the temperature measuring contact to the end of the semiconductor substrate are embedded are formed. ,
At least the temperature measuring contact is fixed to the inside except for the inner wall surface of each groove by an inorganic fixing agent, and before and after anodic bonding, the temperature measuring contact, the part of the thermocouple element, and the fixing A semiconductor substrate temperature measuring device for an anodic bonding apparatus in which the agent does not protrude from the flat surface. A substrate temperature measuring device for an anodic bonding apparatus, comprising the glass substrate temperature measuring device according to claim 1 and the semiconductor substrate temperature measuring device according to claim 2, wherein the flat surfaces are anodically bonded. With scattered measurement areas,
2. The glass substrate temperature according to claim 1, further comprising: a plurality of temperature measuring contacts arranged in each of the measurement regions so as to have different depths from the flat surface inside including the inner wall surfaces of the plurality of grooves. measuring device. With scattered measurement areas,
3. The semiconductor substrate temperature according to claim 2, further comprising: a plurality of temperature measuring contacts disposed in each of the measurement regions so as to have different depths from the flat surface inside the plurality of grooves except on the inner wall surface. measuring device. Consists of a glass substrate for anodic bonding and a plurality of thermocouples,
The glass substrate penetrates the concave portion from a joint surface in which a plurality of grooves are formed, a surface opposite to the joint surface in which concave portions corresponding to the grooves are formed, and a part of the grooves. Having a pair of through holes,
Each of the thermocouples includes a pair of thermocouple strands inserted into the pair of through holes, so that a temperature measuring contact of the thermocouple is positioned between the pair of through holes on the inner wall surface of the recess. Is fixed by an inorganic fixing agent inside, and a part of the thermocouple wire is continuously embedded in each of the grooves to the end of the glass substrate,
The glass substrate temperature measuring device for an anodic bonding apparatus in which the temperature measuring contact, the part of the thermocouple wires, and the fixing agent do not protrude from the bonding surface before and after anodic bonding. Consists of a semiconductor substrate for anodic bonding and a plurality of thermocouples,
The semiconductor substrate penetrates from the part of each of the grooves into the concave part, a joint surface in which a plurality of grooves are formed, a surface opposite to the joint surface in which the concave part corresponding to each of the grooves is formed. Having a pair of through holes,
Each of the thermocouples includes a pair of thermocouple strands inserted into the pair of through holes so that a temperature measuring contact of the thermocouple is positioned between the pair of through holes on the inner wall surface of the recess. Is fixed inside by an inorganic fixing agent, and a part of the thermocouple wire is continuously embedded in each of the grooves to the end of the semiconductor substrate,
The semiconductor substrate temperature measuring device for an anodic bonding apparatus, wherein the temperature measuring contact, the part of the thermocouple wires, and the fixing agent do not protrude from the bonding surface before and after anodic bonding. A substrate temperature measuring device for an anodic bonding apparatus, comprising the glass substrate temperature measuring device according to claim 6 and the semiconductor substrate temperature measuring device according to claim 7, wherein each of the bonding surfaces is anodically bonded. The substrate temperature measuring device according to claim 3 is processed under the same conditions as those of the anodic bonding process excluding trial or production voltage application, and before processing, during processing, and after processing. A method for diagnosing an anodic bonding apparatus, wherein the temperature of each of the glass substrate and the semiconductor substrate is measured a plurality of times regularly or irregularly in at least one period selected from the following.

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