JP2009016635A5 - Substrate processing apparatus and exhaust gas processing method of substrate processing apparatus - Google Patents

Substrate processing apparatus and exhaust gas processing method of substrate processing apparatus Download PDF

Info

Publication number
JP2009016635A5
JP2009016635A5 JP2007177959A JP2007177959A JP2009016635A5 JP 2009016635 A5 JP2009016635 A5 JP 2009016635A5 JP 2007177959 A JP2007177959 A JP 2007177959A JP 2007177959 A JP2007177959 A JP 2007177959A JP 2009016635 A5 JP2009016635 A5 JP 2009016635A5
Authority
JP
Japan
Prior art keywords
exhaust gas
trap
opening
substrate processing
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007177959A
Other languages
Japanese (ja)
Other versions
JP2009016635A (en
JP5237592B2 (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2007177959A priority Critical patent/JP5237592B2/en
Priority claimed from JP2007177959A external-priority patent/JP5237592B2/en
Publication of JP2009016635A publication Critical patent/JP2009016635A/en
Publication of JP2009016635A5 publication Critical patent/JP2009016635A5/en
Application granted granted Critical
Publication of JP5237592B2 publication Critical patent/JP5237592B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Claims (3)

反応室より排出された排気ガスに含まれる副生成物を捕捉するトラップを排気系に付設する基板処理装置であって、 前記トラップの内部に、排気ガスの流れに対し、少なくとも上流側および下流側ともに、前記排気ガスを強制冷却するための強制冷却手段を備え、前記強制冷却手段は、排気ガスの下流側より上流側の冷却力が大きくなるように構成されていることを特徴とする基板処理装置。 A substrate processing apparatus for attaching to an exhaust system a trap for capturing by-products contained in exhaust gas discharged from a reaction chamber, wherein at least the upstream side and the downstream side with respect to the flow of exhaust gas in the trap. In the substrate processing, the substrate processing apparatus further comprises forced cooling means for forcedly cooling the exhaust gas, wherein the forced cooling means is configured such that the cooling power on the upstream side of the downstream side of the exhaust gas is increased. apparatus. さらに、前記トラップの内部に、前記排気ガスを滞留させるための遮蔽手段を備えることを特徴とする請求項１に記載の基板処理装置。
The substrate processing apparatus according to claim 1, further comprising shielding means for retaining the exhaust gas inside the trap.
基板を処理する処理室と、その処理室内のガスを排気する第一の排気ラインと、A processing chamber for processing a substrate, and a first exhaust line for exhausting gas in the processing chamber;
第一の排気ラインと第一の開口部にて連通し処理室から排気された排気ガスの中に含まれる処理室で生成された反応生成物を液化して除去するトラップと、トラップの底部に設けられた第二の開口部にて連通しトラップにより液化された反応生成物を捕集する捕集ラインと、トラップと第三の開口部にて連通しトラップから排気された排気ガスを排気する第二の排気ラインとを備える基板処理装置の排気ガス処理方法であって、A trap for liquefying and removing a reaction product generated in the processing chamber contained in the exhaust gas exhausted from the processing chamber and communicated with the first exhaust line at the first opening, and at the bottom of the trap A collection line communicating with the second opening provided and collecting reaction products liquefied by the trap, and communication between the trap and the third opening and exhausting exhaust gas exhausted from the trap A method of processing exhaust gas of a substrate processing apparatus comprising: a second exhaust line
処理室から排気された排気ガスを第三の開口部から遠ざけるように案内経路によってトラップ内に案内する第１のステップと、A first step of guiding the exhaust gas exhausted from the processing chamber into the trap by a guiding path so as to move it away from the third opening;
その案内経路から第四の開口部を経てトラップ内に排気ガスを排出する第２のステップと、A second step of exhausting exhaust gas into the trap from the guiding path through the fourth opening;
捕集ラインから第二の開口部を経て第三の開口部側まで延在する冷却手段によって第四の開口部から排出された排気ガスを冷却する第３のステップと、A third step of cooling exhaust gas discharged from the fourth opening by the cooling means extending from the collection line to the third opening through the second opening;
冷却された排気ガスから液化副生成物を捕捉する第４のステップと、A fourth step of capturing liquefied by-products from the cooled exhaust gas;
液化副生成物の含まれない排気ガスを第５の開口部から工場排気させる第５のステップと、A fifth step of evacuating the exhaust gas free of liquefied by-products from the fifth opening;
から構成される基板処理装置の排気ガス処理方法。An exhaust gas processing method of a substrate processing apparatus comprising:
JP2007177959A 2007-07-06 2007-07-06 Substrate processing apparatus, exhaust gas processing method of substrate processing apparatus, and substrate processing method Active JP5237592B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007177959A JP5237592B2 (en) 2007-07-06 2007-07-06 Substrate processing apparatus, exhaust gas processing method of substrate processing apparatus, and substrate processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007177959A JP5237592B2 (en) 2007-07-06 2007-07-06 Substrate processing apparatus, exhaust gas processing method of substrate processing apparatus, and substrate processing method

Publications (3)

Publication Number Publication Date
JP2009016635A JP2009016635A (en) 2009-01-22
JP2009016635A5 true JP2009016635A5 (en) 2010-08-19
JP5237592B2 JP5237592B2 (en) 2013-07-17

Family

ID=40357170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007177959A Active JP5237592B2 (en) 2007-07-06 2007-07-06 Substrate processing apparatus, exhaust gas processing method of substrate processing apparatus, and substrate processing method

Country Status (1)

Country Link
JP (1) JP5237592B2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5591473B2 (en) 2008-02-05 2014-09-17 富士フイルム株式会社 Ink composition, inkjet recording method, and printed matter
JP6468884B2 (en) * 2014-04-21 2019-02-13 東京エレクトロン株式会社 Exhaust system
CN106794301B (en) 2014-11-11 2020-11-20 泰尔茂株式会社 Liquid medicine administering device
JP6735686B2 (en) * 2017-01-20 2020-08-05 東京エレクトロン株式会社 Substrate processing apparatus and substrate cooling method
CN113260742A (en) * 2019-04-15 2021-08-13 纽富来科技股份有限公司 SiC epitaxial growth device
JP7418292B2 (en) 2020-06-22 2024-01-19 東京エレクトロン株式会社 Trap equipment and semiconductor manufacturing equipment
CN116173705B (en) * 2022-12-08 2023-12-01 佛山市天禄智能装备科技有限公司 Denitration and desulfurization equipment for lithium battery roller kiln

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3871429B2 (en) * 1998-02-17 2007-01-24 Ｂｏｃエドワーズ株式会社 Exhaust system
JP4495271B2 (en) * 1999-06-01 2010-06-30 エドワーズ株式会社 Trap device
JP2001297988A (en) * 2000-04-13 2001-10-26 Seiko Epson Corp Exhaust trap mechanism of semiconductor manufacturing device
JP3871202B2 (en) * 2002-01-30 2007-01-24 株式会社日立国際電気 Semiconductor manufacturing apparatus and trap apparatus

Similar Documents

Publication Publication Date Title
JP2009016635A5 (en) Substrate processing apparatus and exhaust gas processing method of substrate processing apparatus
TW200737289A (en) Pressure reducing apparatus
MX2014005213A (en) Method for the thermal preparation of an auxiliary material and preparation unit.
JP2009534574A5 (en)
WO2006131472A3 (en) Process for the treatment of particles using a plasma torch
WO2015066428A3 (en) Induction-coupled plasma synthesis of boron nitride nanotubes
JP2007208042A5 (en)
WO2008123288A1 (en) Trap apparatus, exhaust system, and treating system using the same
JP2013514916A5 (en)
WO2009034865A1 (en) Exhaust system structure of film forming apparatus, film forming apparatus and method of disposing of exhaust gas
JP2010199160A5 (en) Substrate processing apparatus, semiconductor device manufacturing method, and substrate processing method
SG10201908213VA (en) Method and system for graphene formation
WO2008063324A3 (en) Components for a plasma processing apparatus
WO2011066032A3 (en) Direct evaporator apparatus and energy recovery system
WO2006117993A3 (en) Process for purifying exhaust gases and apparatus for purifying exhaust gases
MX2012014064A (en) Method and device for eliminating nox and n2o.
TWI456085B (en) Film forming device and film forming method
IN2012DN02498A (en)
WO2006132751A3 (en) High efficiency trap for deposition process
TW200732502A (en) Method of treating a gas stream
WO2017070466A3 (en) Systems and methods for removing combustion products from a power generation cycle
KR100693475B1 (en) Equipment collection residual products for semiconducor
JP2004200364A (en) Exhaust gas processing apparatus and method therefor
WO2007002020A3 (en) Solder process system
WO2008024838A3 (en) Improved method and apparatus for protective atmosphere recycling