JP2009009903A - Manufacturing method of beam amount measuring device and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a beam amount measuring device and a semiconductor device in which an accurate measuring can be conducted without depending on a variation volume of a size of an open port of an aperture. <P>SOLUTION: The beam amount measuring device is provided with an aperture having at least two open ports of different sizes, a measuring piece which can measure each of the bean amounts passing through each of the open ports, and a calculating unit which, based on a measured value of the measuring pieces and an initial value of the size of the open ports, calculates a beam amount not depending on a variation volume of the size of the open ports and a variation amount of the size of the open ports. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a beam amount measuring apparatus and a semiconductor device manufacturing method.

  For example, in an ion implantation process for implanting impurity ions into a semiconductor wafer, it is important to control the ion beam irradiation amount to a desired value. Therefore, the ion beam irradiation amount is measured before or during irradiation of the semiconductor wafer with the ion beam, and the irradiation amount (irradiation time) is controlled based on the measured ion beam irradiation amount. For example, in patent document 1, the irradiation amount of an ion beam is measured using a Faraday cup.

  In ion beam measurement, in order to prevent disturbance in measurement and to prevent damage (deterioration) of the measurement device due to irradiation of the ion beam to areas other than the probe, ion beam irradiation to areas other than the probe is limited. A (shielding) aperture may be used. The aperture has a plate shape with an opening, and the ion beam passes through the opening and reaches the probe.

When the ion beam measurement using the aperture is repeated, the opening edge may be cut by the ion beam, and the size of the opening may be increased. Note that the size of the opening may be reduced due to foreign matter adhering to the opening edge. Variations in the aperture size appear as measurement errors in the ion beam amount as they are, and using this measurement value as a guide for evaluating the ion implantation amount may affect the quality of the semiconductor product. In order to prevent this, the aperture used for a predetermined period must be replaced with a new one having a proper opening size. This replacement period is set relatively short in order to prevent measurement errors due to aperture deterioration, and it may be necessary to replace the aperture even though it has not yet deteriorated. It was apt.
Japanese Patent Laid-Open No. 9-45274

  The present invention provides a beam amount measuring apparatus and a semiconductor device manufacturing method capable of performing an accurate measurement independent of the amount of variation in the aperture opening size.

  According to one aspect of the present invention, an aperture having at least two apertures of different sizes, a probe that can measure the amount of the beam that has passed through each of the apertures, a measurement value of the probe, and the aperture There is provided a beam amount measuring apparatus comprising: an arithmetic unit that calculates a beam amount that does not depend on a variation amount of the opening size based on an initial value of the size of the aperture.

  According to another aspect of the present invention, an aperture having at least two apertures of different sizes, a probe that can measure the amount of the beam that has passed through each of the apertures, and a measurement value of the probe And an arithmetic unit that calculates the amount of variation in the shape of the portion irradiated with the beam based on the initial value of the size of the opening. .

  According to still another aspect of the present invention, a step of measuring a beam amount that has passed through an aperture having at least two openings having different sizes, and a beam amount measured through each of the openings. Calculating a beam amount not dependent on a variation amount of each aperture size using each measured value and an initial value of each aperture size, and a variation amount of the calculated aperture size And a step of calculating a processing time for irradiating the processing substrate with the beam using a beam amount that does not depend on the beam, and a step of irradiating the processing substrate with the beam during the calculated processing time. A method for manufacturing a semiconductor device is provided.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the beam amount measuring apparatus and semiconductor device which can perform the exact measurement which does not depend on the variation | change_quantity of the magnitude | size of the aperture opening of an aperture are provided.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the present embodiment, measurement of the amount of ion beam used in the step of implanting ions by irradiating a semiconductor wafer with an ion beam will be described as an example.

[First Embodiment]
FIG. 1 is a schematic diagram showing the configuration of a beam amount measuring apparatus according to the first embodiment of the present invention.

  The beam amount measuring device according to the present embodiment includes an aperture 10 having two openings 11 and 12 having different sizes (planar areas), and two measuring elements provided corresponding to the two openings 11 and 12, respectively. 15 and 16, and an arithmetic device 18 that receives the output signals (measured values) of the measuring elements 15 and 16 and performs calculations described later.

  The aperture 10 has a plate shape, an irradiation source (not shown) of the ion beam 100 is provided on one surface side of the aperture 10, and the measuring elements 15 and 16 face the openings 11 and 12 on the other surface side, respectively. In the position. Each measuring element 15, 16 is, for example, a Faraday cup, and measures the amount of the ion beam 100 that has passed through each opening 11, 12.

  The aperture 10 restricts (shields) irradiation of the ion beam 100 to a region other than the probe 15 or 16. Thereby, disturbance in measurement is prevented, and damage (deterioration) of the measuring apparatus due to irradiation of the ion beam 100 to a region other than the probe 15 or 16 is prevented.

  In general, when ion beam measurement is repeated, the openings 11 and 12 are shaved by the ion beam 100 as shown by broken lines in FIG. Note that the size of the openings 11 and 12 may be reduced due to foreign matters adhering to the opening edge. If the sizes of the apertures 11 and 12 change, the ion beam amount to be measured changes with the shape change of the apertures 11 and 12 even though the ion beam amount per unit time and unit area is constant. Therefore, an erroneous determination is made in the control of the ion beam irradiation amount on the wafer which is determined based on the measured value.

  Therefore, in the present embodiment, as will be described below, the measured values S1 and S2 of the probe 15 and 16 and the initial values of the sizes of the openings 11 and 12 (because of being scraped by the ion beam 100, adhering foreign matter, etc. Based on the opening width L1 and L2 before the opening width fluctuates), the ion beam amount (particle flow rate) F per unit time and not depending on the fluctuation amount D of the size of the openings 11 and 12 Is calculated by the arithmetic unit 18.

  In the present embodiment, it is assumed that the ion beam amount (particle amount) is uniform in the region to be measured, and the opening 11 and the opening 12 are scraped by the same amount D over time.

  First, in order to simplify the discussion, the amount of variation in the size of the openings 11 and 12 is considered in one dimension (for example, the lateral width in FIGS. 1 and 2). This is true when the openings 11 and 12 have a sufficient length in the depth direction in FIG. 1 and FIG.

  The measured values of the respective measuring elements 15 and 16 (the amounts of ion beams measured by the respective measuring elements 15 and 16) are defined as S1 and S2. The measured values S1 and S2 are proportional to the widths (L1 + 2D) and (L2 + 2D) of the openings 11 and 12, respectively, and are proportional to the ion beam amount F.

  The measured values S1 and S2 of the measuring elements 15 and 16 are considered to be per unit time like the amount of current, and the initial values L1 and L2 of the sizes of the openings 11 and 12 are set to L1 = L, If L2 = a × L (a> 1), S1 and S2 can be expressed as Equations 1 and 2.

  Here, the proportionality coefficient k is an amount that reflects the length of the openings 11 and 12 in the depth direction of the paper and the measurement efficiency of the ion beam 100, and is normally considered to maintain a constant value.

  From Equations 1 and 2, the ion beam amount F and the variation amount D of the size of the apertures 11 and 12 become Equation 3 and Equation 4, respectively.

  In Equations 3 and 4, L and a are known values as initial values of the sizes of the openings 11 and 12, and it can be considered that the proportionality coefficient k also maintains a constant value. The amount of deterioration, that is, the ion beam amount F that does not depend on the variation D of the size of the openings 11 and 12, and the variation D of the size of the openings 11 and 12 can be obtained. In Equation 3, 1 / [kL (a-1)], which is a proportional coefficient of the ion beam amount F, may use the design value of the apparatus, or first, the variation amount D of the openings 11 and 12 The value acquired when = 0 may be used as a reference.

  Next, as shown in FIG. 3, the two openings 21 and 22 having different sizes (areas) formed in the aperture 10 are square, and the variation D of the size (area) of the openings 21 and 22 is two-dimensionally represented. Think in.

  FIG. 3A shows a state before the openings 21 and 22 are cut by beam irradiation, and FIG. 3B shows a state where the four sides of the openings 21 and 22 are cut by the width D to increase the opening area. To express.

  The length of one side of the opening 21 is L1 = L, the length of one side of the opening 22 is L2 = a × L (a> 1), and the variation amount (scraping amount) at each side portion is D. At this time, the corners of the openings 21 and 22 are actually cut as shown by broken lines in FIG. .

The measured values S1 and S2 of the measuring elements 15 and 16 are proportional to the areas (L + 2D) ² and (a × L + 2D) ² of the openings 21 and 22, respectively.

Equation 5 In Equation 6, if the management range aperture width variation amount D is smaller than the length L of one side of the opening 21, since D ² can be ignored sufficiently small, Equation 7, It can be expressed as Equation 8.

  From Equations 7 and 8, the ion beam amount F per unit time and unit area and the variation amount D of the size of the apertures 21 and 22 are Equations 9 and 10, respectively.

  In Expressions 9 and 10, L and a are known values as initial values of the sizes of the openings 21 and 22, and it can be considered that the proportionality coefficient k also maintains a constant value. The amount of ion beam F that does not depend on the amount of fluctuation D of the size 22 and the amount of fluctuation D of the size of the openings 21 and 22 can be obtained.

  Next, as illustrated in FIG. 5, when the two openings 31 and 32 having different sizes (areas) formed in the aperture 10 are circular, the amount of variation D of the size (area) of the openings 31 and 32 is D. Think in two dimensions.

  In FIG. 5, the broken line represents openings 31 and 32 before being cut by beam irradiation, and the solid line represents a state in which the openings 31 and 32 are cut and the size (area) is increased from the initial state of the broken line.

  It is assumed that the radius of the opening 31 is r1 = r, the radius of the opening 32 is r2 = a × r (a> 1), and the amount of variation (scraping amount) in the openings 31 and 32 is D.

Since the measured values S1 and S2 of the measuring elements 15 and 16 are proportional to the areas π (r + D) ² and π (a × r + D) ² of the openings 31 and 32, they are expressed by Expressions 11 and 12.

Equation 11, in Equation 12, as compared to the radius r of the opening 31, as the opening width fluctuation amount D is negligible is sufficiently small D ^2, Equation 11, from Equation 12, the unit time, the ion beam per unit area When F and the variation amount D of the size of the openings 31 and 32 are obtained, Expressions 13 and 14 are obtained.

  The ion beam amount F expressed by the above-described Equations 3, 9, and 13 does not depend on the variation amount D of the aperture size. That is, according to the present embodiment, the ion beam amount per unit area (particles) does not depend on the fluctuation amount D even if the aperture size fluctuates while the ion beam measurement is repeated. (Flow rate) F can be obtained. Therefore, the ion beam amount F, which is a measure for evaluating the ion beam amount irradiated to the semiconductor wafer in the ion implantation process, can be accurately obtained without being affected by the deterioration of the aperture 10, and the deterioration of the quality of the semiconductor product is suppressed. be able to.

  Further, as represented by Expression 4, Expression 10, and Expression 14, with respect to the variation D of the opening size, the measured values S1 and S2 of the measuring elements 15 and 16 and the opening size that is a known value It is possible to obtain quantitatively based on the initial value, and by managing the fluctuation amount D, it is possible to determine an appropriate replacement time for the aperture 10. As a result, it is possible to avoid replacing the aperture even if it has not deteriorated yet, and it becomes possible to extend the replacement life of the aperture, and it is not necessary to perform a lot of unnecessary periodic maintenance. Further, by managing the variation amount D of the opening size, the variation amount D suddenly increases due to a crack in the opening, or suddenly decreases due to foreign matter adhering to the opening edge. It becomes possible to recognize the abnormality and to respond quickly to the abnormality.

  When the variation amount D of the aperture size of the aperture is considered in two dimensions, in the above description, an approximate expression is obtained assuming that the square term of the variation amount D can be ignored. It is also possible to calculate the ion beam amount F and the fluctuation amount D by strictly incorporating the term and calculating. Further, when the planar shape of the opening is a square, it is approximated that the corner of the opening deteriorates to a rectangular shape. However, as shown in FIG. You can also get exact values.

  Further, as shown in FIG. 6A which is a schematic plan view of the aperture 10 and FIG. 6B which shows a cross section in FIG. 6A, the same ion beam as the ion beam irradiated to the openings 21 and 22 is obtained. If it hits the end edge 10a of the plate-like aperture 10 for the same time, the end edge 10a is also scraped by the same amount D as the openings 21 and 22, as indicated by a broken line. Therefore, the variation D is not only regarded as the size (shape) variation (cutting amount) of the openings 21 and 22, but also as the size (shape) variation (cutting amount) of the edge 10a of the aperture 10. it can.

[Second Embodiment]
FIG. 7 is a schematic diagram showing a configuration of a beam amount measuring apparatus according to the second embodiment of the present invention.

  The beam amount measuring apparatus according to the present embodiment receives an aperture 40 having two openings 41 and 42 having different sizes (planar areas), one measuring element 45, and an output signal (measured value) of the measuring element 45. Then, the same calculation as in the first embodiment described above is performed, and the ion beam amount F per unit area and the variation in the size of the aperture are not dependent on the variation amount D in the size of the openings 41 and 42. And an arithmetic unit 18 for calculating the quantity D.

  The aperture 40 has a plate-like shape as in the first embodiment. An irradiation source (not shown) of the ion beam 100 is provided on one surface side of the aperture 40, and a probe 45 is provided on the other surface side. ing. The measuring element 45 is, for example, a Faraday cup, and can measure the amount of ion beam that has passed through the openings 41 and 42.

  In the present embodiment, one measuring element 45 is provided in common to the two openings 41 and 42. The aperture 40 and the probe 45 can be moved relative to each other. For example, in the present embodiment, the aperture 40 can be moved in the horizontal direction indicated by the arrow X in FIG. The driving means includes, for example, a motor and a mechanism for converting the rotational driving force of the motor into linear motion.

  If the aperture 40 is driven so that the opening 41 faces the measuring element 45, the beam amount of the ion beam 100 passing through the opening 41 can be measured by the measuring element 45, and the opening 42 is formed on the measuring element 45. When the aperture 40 is driven so as to be opposed to each other, the amount of the ion beam 100 passing through the opening 42 can be measured by the probe 45. If the same ion beam 100 is irradiated to both the openings 41 and 42 for the same time, the magnitude variation (scraping amount) D in the two openings 41 and 42 becomes the same.

  Also in the present embodiment, as in the first embodiment, the measured values of the beam amounts that have passed through the two openings 41 and 42 having different sizes, measured by the probe 45, and the openings 41 and 42, respectively. Based on the initial value (known value) of the size, the arithmetic unit 18 determines whether the ion beam amount F per unit area, the ion beam amount F per unit area, the aperture 41, A fluctuation amount D of 42 is calculated. As a result, the ion beam amount F, which is a guideline for evaluating the ion beam amount irradiated to the semiconductor wafer in the ion implantation process, can be accurately obtained without being affected by the deterioration of the aperture 40, and the deterioration of the quality of the semiconductor product is suppressed. can do. In addition, by managing the variation amount D of the size of the openings 41 and 42, it is possible to determine an appropriate replacement time of the aperture 40, and to recognize and quickly respond to an abnormality in which the variation amount D suddenly changes. .

  In the present embodiment, the aperture 40 is configured to be movable with respect to the probe 45, so that even with one probe 45, the amount of ion beam that has passed through the two openings 41 and 42 can be measured. As a result, the number of measuring elements can be reduced as compared with the first embodiment, and the cost can be reduced. Note that the probe 45 may be moved with respect to the stationary aperture 40, or both the aperture 40 and the probe 45 may be movable.

  Further, it is not necessary to set the spread range of the ion beam 100 over two measuring elements, and the same ion beam 100 narrowed to a narrower region than the first embodiment has two openings 41 and 42. Therefore, it is possible to avoid the difference in the aperture size variation due to the difference in the region to be measured in the ion beam 100 between the two apertures 41 and 42, and to perform measurement with higher accuracy.

[Third Embodiment]
FIG. 8 is a flowchart showing an implantation amount measurement procedure in an ion implantation process to a processing substrate (semiconductor wafer) as a method for manufacturing a semiconductor device according to the third embodiment of the present invention. In the following description, it is assumed that ion beam generation adjustment related to the implantation process has already been performed.

  First, the ion beam irradiation amount to the processing substrate per unit area, which is one of the processing conditions of the ion implantation processing, is read from the processing recipe (step S1).

  Next, the ion beam amount F per unit time unit area not depending on the aperture shape deterioration is determined by the beam amount measuring apparatus according to the above-described embodiment based on the measurement values S1 and S2 and the initial value of the aperture size. It is measured (step S2). Since the calculation principle of the ion beam amount F has already been described, the description thereof is omitted here.

  Next, an implantation processing time (ion beam irradiation time) T is calculated using the irradiation amount per unit area, which is a processing condition, and the calculated ion beam amount F (step S3). T can be calculated, for example, as T = irradiation amount per unit area / F.

  Finally, the processing substrate is irradiated with an ion beam for the time T (step S4).

  By using the ion implantation method of the present embodiment, it becomes possible to irradiate a processing substrate with a target amount of ion beam without being affected by the deterioration of the aperture of the ion beam amount measuring apparatus, and fluctuations in the quality of semiconductor products. Can be suppressed.

  In the present embodiment, the calculation of the processing time T is described by the simplest formula, but the calculation formula is not limited to this. Since the calculation of the processing time depends on the processing substrate driving method, an appropriate calculation formula may be set in accordance with the apparatus configuration and the processing substrate driving method. As a modification of the present embodiment, when the irradiation amount is large, the ion irradiation processing may be performed in a plurality of times, and the processing time may be calculated before each ion irradiation processing.

[Fourth Embodiment]
FIG. 9 is a schematic diagram showing a configuration of an ion beam amount measuring apparatus according to the fourth embodiment of the present invention.

  The ion beam amount measuring device 60 according to the present embodiment includes an aperture 50 having two openings 51 and 52 having different sizes (planar areas), and two apertures provided corresponding to the two openings 51 and 52, respectively. Measuring elements 55 and 56 and an arithmetic device 58 are provided. Further, the entire ion beam measuring device 60 is integrated by a driving means (not shown) and can be moved in the left-right direction on the paper surface in FIG.

  The computing device 58 performs the same calculation as in the first and second embodiments based on the position X when moved by the driving means and the signal amount measured by the measuring elements 55 and 56, and the opening 51. , 52, the beam amount (current amount) F per unit time that does not depend on the variation amount of the size of 52, and the variation amount D of the size of the openings 51, 52 are calculated.

  The signal amounts of the two measuring elements 55 and 56 when the ion beam amount measuring apparatus 60 is at the position X by the driving means are respectively S1 (X) and S2 (X), and the opening positions of the openings 51 and 52, that is, the measuring elements. If the measurement positions 55 and 56 are separated by dX, S1 (X + dX) and S2 (X) are signal quantities obtained by measuring the ion beam quantity at the same position.

  Therefore, in this embodiment, by using S1 (X + dX) and S2 (X) instead of S1 in the calculation method shown in the first and second embodiments described above, the beam amount F (X ) And the variation amount D (X) of the size of the openings 51 and 52 can be calculated.

  Further, when the signal amount ratio S1 (X) / S2 (X-dX) measured at the same place does not become a constant value (ratio of the plane areas of the two openings 51 and 52), the ion beam amount is measured. It can be determined that the ion beam amount fluctuates during this time. Further, it is considered that the amount of change (deterioration amount) of the openings 51 and 52 is negligibly small in one measurement, and the variation amount D (X) of the openings 51 and 52 calculated at the same time is also constant, so that D (X) The variation is considered to be a variation in the amount of ion beam being measured, a foreign matter adhering to the openings 51 and 52, or a rapid deterioration (breakage etc.) of the openings 51 and 52. In this case, it can be determined that the measured value does not output a correct value.

  FIG. 10 is a schematic diagram showing an apparatus for measuring an ion beam irradiation angle using the ion beam amount measurement apparatus of the fourth embodiment.

  This irradiation angle measurement device includes an ion beam amount measurement device 60 having the drive mechanism shown in the fourth embodiment, and an aperture 54 provided downstream of the ion beam amount measurement device 60 in the ion beam traveling direction. A measuring element 57 that detects the amount of beam that has passed through the opening 53 formed in the aperture 54, and an arithmetic unit 59 that calculates the irradiation angle θ of the ion beam.

  The calculation device 59 includes the position X of the ion beam amount measurement device 60 (the position in the left-right direction in FIG. 10) and the ion beam amount measurement device 60 calculated by the calculation device 58 (FIG. 9) of the ion beam amount measurement device 60. A dimension variation amount (deterioration amount) D of the aperture 50 and a signal amount S3 measured by the probe 57 are input, and an ion beam irradiation angle θ is output.

  A commonly used method for measuring the ion beam irradiation angle can be applied, that is, a part of the ion beam is cut upstream in the ion beam traveling direction, the ion beam is detected downstream, and the detection position is detected. There is a method of obtaining the irradiation angle from the deviation amount. However, if the member that cuts off the ion beam deteriorates, an error occurs in the calculation of the irradiation angle.

  Therefore, in this embodiment, a part of the ion beam is cut out (blocked) using the aperture 50 of the ion beam measuring apparatus 60 that can be moved by the driving mechanism described in the fourth embodiment. At this time, the edge portion of the aperture 50 deteriorates (dimension fluctuation) so as to be scraped by being hit by the ion beam, but the fluctuation amount D is as described with reference to FIG. 6 in the second embodiment. It is possible to consider that the amount of fluctuation of the aperture in the aperture is approximately the same, and using the D, an accurate ion beam irradiation angle θ that does not depend on the deterioration of the aperture 50, that is, the member that cuts the ion beam upstream is calculated. It becomes possible.

  Calculated by the position X of the ion beam amount measuring device 60, the beam amount S3 measured by the measuring element 57 provided at the position Z1 downstream from the ion beam amount measuring device 60, and the arithmetic unit 58 of the ion beam amount measuring device 60. The deterioration amount D of the aperture (deterioration amount of the member that cuts out the ion beam) 50 is input to the arithmetic device 59 of the ion beam irradiation angle measurement device.

Upon receiving these inputs, the arithmetic unit 59 determines the position X of the ion beam amount measuring device 60 where the beam amount S3 measured by the probe 57 changes to 0 (zero), and sets this value as X1. If the position serving as the reference of the irradiation angle is X0, the irradiation angle θ is
θ = Arctan [(X1−D−X0) / Z1] is calculated.

  By applying the aperture 50 of the ion beam amount measuring device 60 as a member for cutting out the ion beam in measuring the irradiation angle of the ion beam, an accurate ion beam can be obtained without depending on the deterioration amount D of the edge portion of the aperture 50. Can be calculated.

  The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to them, and various modifications can be made based on the technical idea of the present invention.

  In the present invention, the number of apertures of different sizes formed in the aperture is not limited to two, but three or more, and the amount of beam that has passed through each aperture is measured by a probe, respectively, and the ion beam amount F, aperture You may obtain | require the variation | change_quantity D of the magnitude | size of. The present invention is not limited to the measurement of an ion beam, but can be applied to the measurement of, for example, a light beam, other particle beams, and an electromagnetic wave beam.

It is a schematic diagram showing the structure of the beam amount measuring apparatus which concerns on the 1st Embodiment of this invention. FIG. 2 is a schematic diagram illustrating a state in which the aperture opening width is increased from the state of FIG. 1. It is a schematic diagram showing an example of the aperture shape of the aperture in the beam amount measuring apparatus according to the embodiment. It is an enlarged view of the corner | angular part of the opening in FIG. It is a schematic diagram showing the other specific example of the aperture shape of an aperture in the beam amount measuring apparatus which concerns on the embodiment. It is a schematic diagram showing the state where the edge part of the aperture was shaved by beam irradiation. It is a schematic diagram showing the structure of the beam amount measuring apparatus which concerns on the 2nd Embodiment of this invention. It is a flowchart which shows the implantation amount measurement procedure in the ion implantation process which is the manufacturing method of the semiconductor device which concerns on the 3rd Embodiment of this invention. It is a schematic diagram showing the structure of the beam amount measuring apparatus which concerns on the 4th Embodiment of this invention. It is a schematic diagram showing the structure of the apparatus which measures the beam irradiation angle using the beam amount measuring apparatus which concerns on 4th Embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Aperture, 11 ... Opening, 12 ... Opening, 15 ... Measuring element, 16 ... Measuring element, 18 ... Computing device, 21 ... Opening, 22 ... Opening, 31 ... Opening, 32 ... Opening, 40 ... Aperture, 41 ... Opening , 42 ... opening, 45 ... measuring element

Claims (5)

An aperture having at least two openings of different sizes;
A stylus capable of measuring the amount of beam that has passed through each of the apertures;
An arithmetic unit that calculates a beam amount that does not depend on a variation amount of the aperture size, based on a measurement value of the probe and an initial value of the aperture size;
A beam amount measuring device comprising: An aperture having at least two openings of different sizes;
A stylus capable of measuring the amount of beam that has passed through each of the apertures;
An arithmetic device that calculates the amount of variation in the shape of the portion irradiated with the beam based on the measurement value of the probe and the initial value of the size of the opening;
A beam amount measuring device comprising:   The beam amount measuring apparatus according to claim 2, wherein the arithmetic unit calculates a variation amount of the size of the opening.   The beam amount measuring apparatus according to claim 1, wherein a plurality of the measuring elements are provided corresponding to the plurality of openings. Measuring the amount of beam that has passed through an aperture having at least two apertures of different sizes;
Calculating a beam amount that does not depend on a variation amount of the size of each aperture, using each measured value of the beam amount measured through each aperture and an initial value of the size of each aperture; ,
Calculating a processing time for irradiating the processing substrate with a beam, using a beam amount that does not depend on the calculated variation in the opening size;
Irradiating the processing substrate with a beam during the calculated processing time;
A method for manufacturing a semiconductor device, comprising:

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