JP2008521241A5

JP2008521241A5 -

Info

Publication number: JP2008521241A5
Application number: JP2007542902A
Authority: JP
Filing date: 2005-11-17
Publication date: 2012-10-04
Anticipated expiration: 2025-11-17

Description

しかしながら、前記乾式エッチング装置は、基板上にエッチング及び蒸着工程を実行する間、基板上の物質膜の中で選択された物質膜上においてエッチング終了点を探せない場合もある。なぜならば、乾式エッチング装置は工程チャンバ内の工程ガスにより生成したプラズマ光が基板のエッチング及び蒸着の情報を混じえて有する場合もあるからである。 However, the dry etching apparatus may not be able to find the etching end point on the material film selected from the material films on the substrate while performing the etching and deposition process on the substrate. Because dry etching apparatus is because there is a case where a plasma light generated by the process gas in the process chamber has been mixes information etching and deposition of board.

次に、前記光解析部３８は、光集束部３４と電気的に接続されて、その集束部３４からプラズマ光２３を受けて光イメージ（図示せず）を生成することができる。前記光イメージは、コンピュータが認識することのできるバイナリ(Binary)データで形成される。また、前記光解析部３８は、従来技術と異なる移動平均法を利用して光イメージからイメージ軌跡を生成することができる。本発明に係る前記移動平均法は、ボッシュプロセスのエッチング及び蒸着工程において、エッチング工程または蒸着工程の工程時間を複数の時間間隔に細分し、前記複数の時間間隔のうちの１つの時間間隔における複数個の時刻に対応するプラズマ光２３の周波数の合計を求めることを含む。 Next, the light analyzing unit 38 is electrically connected to the light converging unit 34 and can receive the plasma light 23 from the converging unit 34 to generate an optical image (not shown). The optical image is formed of binary data that can be recognized by a computer. In addition, the light analyzing unit 38 can generate an image locus from an optical image by using a moving average method different from that of the prior art. The moving average method according to the present invention, the etching and deposition process Bosch process, the process time of the etching process or a deposition process is subdivided into a plurality of time between intervals, during a single time interval of the plurality of time intervals It includes determining the sum of the frequencies of the plasma light 23 corresponding to a plurality of times.

また、前記移動平均法は、プラズマ光２３の周波数の合計を、複数個の時刻の総数で割って、前記複数の時間間隔のうち前記１つの時間間隔以外の他の時間間隔に対してこれを繰り返し実行することをさらに含む。前記移動平均法は、光解析部３８を介して一回以上実行させることができる。前記時刻の総数は、プラズマ光２３を小口間のそれぞれに繰り返し測定した時点( A point in time)の合計である。このとき、前記光イメージの波形は、プラズマ光２３の波形よりも屈曲が大きく形成される。これによって、前記光解析部３８は光イメージを主コンピュータ４０へ伝達することができる。
In the moving average method, the total frequency of the plasma light 23 is divided by the total number of a plurality of times, and this is calculated for other time intervals other than the one time interval among the plurality of time intervals. It further includes performing repeatedly. The moving average method can be executed one or more times via the optical analysis unit 38. The total number of times is the total of the time points (A point in time) at which the plasma light 23 is repeatedly measured in each of the small openings. At this time, the waveform of the optical image is formed to be bent more than the waveform of the plasma light 23. Accordingly, the light analyzing unit 38 can transmit the light image to the main computer 40.

Claims

In a dry etching apparatus that generates plasma light by performing an etching and vapor deposition process in a Bosch process,
A process chamber disposed in a dry etching apparatus;
An optical window disposed on a sidewall of the process chamber;
A light focusing portion disposed around the light window;
An optical analysis unit electrically connected to the light focusing unit;
A main computer electrically connected to the optical analysis unit ,
The light window projects the plasma light out of the process chamber;
The light focusing part captures the plasma light after elapse of from the time of performing the etching or vapor deposition process to the initial period ,
The light analysis unit converts the plasma light into a light image composed of binary data that can be recognized by the main computer, and provides the light image obtained by applying arithmetic operations to the light image a plurality of times to the main computer .
The main computer receives the optical image of the optical analysis unit, generates an image locus, and displays it on a monitor ,
The arithmetic operation comprises using a moving average method;
The moving average method subdivides the process time of the etching or deposition process to a plurality of time intervals, the frequency of the wavelength range of the plasma light corresponding to a plurality of time during a single time interval of the plurality of time intervals Calculate the total, by dividing the sum of the frequencies of the plasma light by the total number of the time, and repeatedly executes this for the one other time interval other than time interval of the plurality of time intervals A dry etching apparatus characterized by that.

An optical probe and an optical selector disposed between the optical window and the optical converging unit;
The optical sorter is disposed around the optical window so as to oppose the optical window, one end of the optical probe is arranged to oppose the optical selector, and the other of the optical probe The dry etching apparatus according to claim 1, wherein an end is disposed in the light focusing unit.

The dry etching apparatus according to claim 2, wherein the light focusing unit includes an optical filter, a monochromator, or a CCD.

The dry etching apparatus according to claim 3, wherein the light converging unit captures the plasma light having a resolution of 0.1 nm to 10 nm and a frequency in a wavelength range of 200 nm to 1100 nm.

The light sorter includes a plurality of openings and a light blocking film that defines the openings,
The optical probe is arranged to face one of the openings, the opening is arranged on a circle having a predetermined radius from the center of the light blocking film, and the light selector is arranged around the optical window. 3. The dry etching apparatus according to claim 2, wherein the dry etching apparatus is supported so as to be capable of rotating, and a period of passing through the openings in the light selector is the same as a period of performing the etching or deposition process. .

The dry etching apparatus according to claim 5, wherein the optical probe includes an optical fiber.

And further comprising an optical probe and a signal line disposed between the optical window and the optical converging unit and in the optical converging unit, respectively.
The signal line has two electrical nodes, a switch for connecting and short-circuiting the electrical nodes, one end of the optical probe is disposed in the process chamber through the optical window, and the other of the optical probe The dry etching apparatus according to claim 1, wherein an end is disposed in the light focusing unit.

The dry etching apparatus according to claim 7, wherein a cycle in which the electrical node is connected and short-circuited by the switch is the same as a cycle in which the etching and deposition processes are performed.

The dry etching apparatus according to claim 7, wherein a cycle in which the electrical node is connected and short-circuited by the switch is the same as a cycle in which the deposition and etching processes are performed.

The dry etching apparatus according to claim 7, wherein the light focusing unit includes an optical filter, a monochromator, or a CCD.

The dry etching apparatus of claim 10, wherein the light focusing unit captures the plasma light having a resolution of 0.1 nm to 10 nm and a frequency in a wavelength range of 200 nm to 1100 nm.

The dry etching apparatus according to claim 11, wherein the optical probe includes an optical fiber.

Further comprising an optical probe between the optical window and the optical focusing unit,
The dry etching apparatus according to claim 1, wherein the dry etching apparatus has at least one reference value ± allowable error in an operation program.

The dry etching apparatus of claim 1, further comprising a lower electrode and an upper electrode disposed in the process chamber.

The dry etching apparatus of claim 1, further comprising a magnetic field forming unit around the process chamber so as to correspond to the lower electrode in the process chamber and the electrode.

In the dry etching end point detection device that checks the etching end point using the plasma light between the etching and vapor deposition process of the Bosch process,
A light focusing section;
An optical analysis unit electrically connected to the light focusing unit;
A main computer electrically connected to the optical analysis unit,
The light focusing part captures the plasma light after elapse of from the time of performing the etching or vapor deposition process to the initial period,
The light analysis unit converts the plasma light into a light image composed of binary data that can be recognized by the main computer, and provides the light image obtained by applying arithmetic operations to the light image a plurality of times to the main computer.
The main computer receives the optical image of the optical analysis unit, generates an image locus, and displays it on a monitor,
The arithmetic operation comprises using a moving average method;
The moving average method subdivides the process time of the etching or deposition process to a plurality of time intervals, the frequency of the wavelength range of the plasma light corresponding to a plurality of time during a single time interval of the plurality of time intervals Calculate the total, by dividing the sum of the frequencies of the plasma light by the total number of the time, and repeatedly executes this for the one other time interval other than time interval of the plurality of time intervals Dry etching end point detector.

An optical probe and a light sorter;
The light sorter is arranged to selectively capture the plasma light of the etching or deposition process during the process time of the Bosch process, and one end of the light probe is adjacent to the light sorter. The dry etching end point detection device according to claim 16, wherein the other end of the optical probe is disposed in the light converging unit.

The light sorter includes a plurality of openings and a light blocking film that defines the openings,
The optical probe is arranged so as to face one of the openings, the opening is arranged on a circle having a predetermined radius from the center of the light blocking film, and the optical selector is arranged around the optical probe. The dry etching according to claim 17, wherein a period of time between the openings in the optical sorter is the same as a period of performing the etching or deposition process. End point detection device.

A signal line and an optical probe;
One end of the optical probe is arranged to capture the plasma light of the etching and vapor deposition process during the Bosch process time, and the other end of the optical probe is the optical focusing unit. The dry etching end point detection apparatus according to claim 16, wherein the signal line includes two electrical nodes, and a switch for connecting and short-circuiting the electrical nodes.

The dry etching end point detection apparatus according to claim 19, wherein a cycle of connecting and short-circuiting the electrical node by the switch is the same as a cycle of performing the etching and deposition process.

In a method of forming an electrical element using a dry etching apparatus that executes a Bosch process,
Loading the substrate into the process chamber;
Forming plasma light by sequentially performing etching and vapor deposition processes on the substrate in sequence,
Selectively and periodically capturing the plasma light after the end of the initial period from the start of the etching or vapor deposition process to form a light image consisting of binary data ;
Applying an arithmetic operation to the light image to form at least one image trajectory;
Including
Forming at least one of the image trajectories;
Forming a main computer electrically connected to the optical analysis unit;
The optical analysis unit provides the main computer with an optical image obtained by applying arithmetic operations to the optical image a plurality of times;
The main computer receives the optical image of the optical analysis unit, generates an image locus, and displays it on a monitor ,
Before SL arithmetic operation comprises using the moving average method,
The moving average method subdivides the process time of the etching or deposition process to a plurality of time intervals, the frequency of the wavelength range of the plasma light corresponding to a plurality of time during a single time interval of the plurality of time intervals Calculate the total, by dividing the sum of the frequencies of the plasma light by the total number of the time, and repeatedly executes this for the one other time interval other than time interval of the plurality of time intervals A method of forming an electrical element.

The method of forming an electric element according to claim 21, wherein the total number of times is a total of time points at which the plasma light is repeatedly measured for the one time among the predetermined times.

Selectively and periodically capturing the plasma light,
Forming an optical window to be disposed on a sidewall of the process chamber, the optical window projecting the plasma light from the process chamber while performing the etching and deposition process;
Forming a light focusing portion to be disposed around the light window;
Forming a light probe between the light focusing portion and the light window,
The operation program in the dry etching apparatus compares and judges at least one reference value ± allowable error and the frequency range of the wavelength range of the plasma light in the program, and the plasma light according to the process time of the Bosch process. The method of forming an electrical element according to claim 21, wherein:

The method of claim 23, wherein the light focusing unit includes an optical filter, a monochromator, or a CCD.

25. The method of forming an electrical device according to claim 24, wherein the plasma light has a resolution of 0.1 nm to 10 nm and a frequency in a wavelength range of 200 nm to 1100 nm.

Selectively and periodically capturing the plasma light,
Forming an optical window to be disposed on a sidewall of the process chamber, the optical window projecting the plasma light from the process chamber while performing the etching and deposition process;
Forming a light focusing portion to be disposed around the light window;
Forming a light probe and a light sorter between the light focusing portion and the light window,
The light sorter is formed to be able to rotate around the light window, the light sorter is formed to have a plurality of openings and a light blocking film that defines the openings, and the openings are Formed on a circle having a predetermined radius from the center of the light blocking film, the rotational movement of the light selector separates the plasma light according to a process time of the Bosch process, and one end of the light probe is the light selector. 23. The electrical device according to claim 21, wherein the electrical probe is formed so as to be opposed to one of the openings of the device, and the other end of the optical probe is formed in the optical focusing unit. how to.

27. The method of forming an electric device according to claim 26, wherein the light focusing unit includes an optical filter, a monochromator, or a CCD.

28. The method of forming an electrical device according to claim 27, wherein the plasma light has a resolution of 0.1 nm to 10 nm and a frequency in a wavelength range of 200 nm to 1100 nm.

Selectively and periodically capturing the plasma light,
Forming an optical window to be disposed on a sidewall of the process chamber, the optical window projecting the plasma light from the process chamber while performing the etching and deposition process;
Forming a light focusing portion to be disposed around the light window;
Forming an optical probe and a signal line between the light focusing portion and the optical window, and in the light focusing portion, respectively.
The signal line is formed to have two electrical nodes, a switch for connecting and short-circuiting the electrical node, and the connection and short-circuit of the electrical node separates the plasma light according to the process time of the Bosch process, and the optical probe. The one end of the needle is formed in the process chamber through the optical window, and the other end of the optical probe is formed in the light focusing portion. how to.

30. The method as claimed in claim 29, wherein a cycle of connecting and short-circuiting the electrical node by the switch is the same as a cycle of performing the etching and deposition process.

30. The method as claimed in claim 29, wherein a cycle of connecting and short-circuiting the electrical node by the switch is the same as a cycle of performing the deposition and etching process.

30. The method of claim 29, wherein the light focusing unit includes an optical filter, a monochromator, or a CCD.

The method according to claim 32, wherein the plasma light has a resolution of 0.1 nm to 10 nm and a frequency in a wavelength range of 200 nm to 1100 nm.

Forming the light image comprises:
Forming an optical analysis unit electrically connected to the light focusing unit;
30. The electrical device according to claim 23, 26 or 29, comprising: converting the plasma light into electrical data using the optical analysis unit. how to.

22. The electrical device of claim 21, wherein forming at least one of the image trajectories further comprises the main computer displaying the binary data on a monitor according to a process time of a Bosch process. how to.

The method of forming an electrical device of claim 21, further comprising forming lower and upper electrodes in the process chamber.

The method of claim 21, further comprising forming a magnetic field forming unit around the process chamber so as to correspond to the lower electrode and the electrode in the process chamber.