JP2008298797A - Sample preparing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sample preparing method and device for microregion assay, observation or measurement of a minute sample by separating or separating/preparing the minute sample containing a desired specific region from samples of electronic components such as semiconductor wafer and device, etc. without inclining the sample stage. <P>SOLUTION: This sample preparing method is characterized by that the sample surface is irradiated with focused ion beams at irradiation angle of not more than 90 degrees or less, the area around the target minute sample is removed, the sample stage is rotated with vertical line segment to the sample surface as an axis of rotation and then the sample is irradiated with the focused ion beam at the irradiation angle of the beam to the sample surface fixed, separating or separating/preparing the minute sample. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention separates or prepares a micro sample including a desired specific region from a sample such as an electronic component such as a semiconductor wafer or a device using a focused ion beam, and prepares a sample for micro region analysis, observation, and measurement. The present invention relates to a method and a sample preparation apparatus.

  High-yield manufacturing is required in the manufacture of semiconductor components such as dynamic random access memories, semiconductor devices such as microprocessors and semiconductor lasers, and electronic components such as magnetic heads. That is, a decrease in product yield due to the occurrence of defects leads to a deterioration in profitability. For this reason, the early detection and early countermeasures of the defect, foreign material, and processing defect which cause a defect become a big subject. For example, in the manufacturing field of semiconductor devices, efforts are focused on finding defects by careful inspection and analyzing the cause of occurrence. In an actual electronic component manufacturing process using a wafer, the wafer in the middle of the process is inspected, and a countermeasure method is investigated by pursuing the cause of an abnormal portion such as a defect in a circuit pattern or a foreign substance.

  Usually, a high-resolution scanning electron microscope (hereinafter abbreviated as SEM) is used to observe the microstructure of a sample. However, as the integration of semiconductors increases, the object cannot be observed at the SEM resolution. Instead, a transmission electron microscope (hereinafter abbreviated as TEM) with higher observation resolution is used.

  Conventional TEM sample preparation involves the work of crushing or cutting the sample into small pieces, and when the sample is a wafer, in most cases the wafer has to be cleaved.

  Recently, an ion beam is irradiated onto a sample, and a micro-region processing method that applies the action of the particles constituting the sample being emitted from the sample by sputtering, that is, focused ion beam (hereinafter abbreviated as FIB) processing is used. There is an example. First, using a dicing apparatus or the like, a strip-like pellet having a thickness of submillimeter including a region to be observed is cut out from a sample such as a wafer. Next, a part of the strip-shaped pellet is processed into a thin wall by FIB to obtain a TEM sample. Here, a characteristic of the FIB-processed sample for TEM observation is that a part of the test piece is processed into a thin film having a thickness of about 100 nm for TEM observation. Although this method makes it possible to locate and observe a desired observation portion with micrometer level accuracy, the wafer must still be cleaved.

  As described above, monitoring the results of a certain process during the manufacture of semiconductor devices and the like has a great advantage in terms of yield management. However, in sample preparation as described above, the wafer is cleaved and the wafer fragments are the next. It is discarded without proceeding to the process. In particular, in recent years, the diameter of wafers has been increasing in order to reduce the manufacturing cost of semiconductor devices. That is, the number of semiconductor devices that can be manufactured with one wafer is increased to reduce the unit price. However, on the contrary, the price of the wafer itself becomes expensive, the added value increases as the manufacturing process proceeds, and the number of semiconductor devices lost due to the destruction of the wafer also increases. Therefore, a conventional inspection method that involves dividing a wafer is very uneconomical.

  On the other hand, there is a method capable of producing a sample without dividing the wafer. This method is disclosed in Japanese Patent Application Laid-Open No. 05-52721 “Method for separating sample and method for analyzing separated sample obtained by this separation method” (Patent Document 1). In this method, as shown in FIG. 2, first, the posture of the sample 2 is maintained so that the FIB 1 is irradiated at a right angle to the surface of the sample 2, the FIB 1 is scanned in a rectangular shape on the sample, and the required depth is formed on the sample surface. The square hole 7 is formed (FIG. 2A). Next, the sample 2 is inclined to form the bottom hole 8. The inclination angle of the sample 2 is changed by a sample stage (not shown) (FIG. 2 (b)). The posture of the sample 2 is changed, the sample 2 is set so that the surface of the sample 2 is again perpendicular to the FIB 1, and a notch groove 9 is formed (FIG. 2 (c)). A manipulator (not shown) is driven, and the tip of the probe 3 at the tip of the manipulator is brought into contact with a portion where the sample 2 is separated (FIG. 2 (d)). A deposition gas 5 is supplied from the gas nozzle 10 and the FIB 1 is locally irradiated to a region including the tip of the probe 3 to form an ion beam assisted deposition film (hereinafter abbreviated as a deposition film 4). The separated portion of the sample 2 in contact with the tip of the probe 3 is connected by a deposition film 4 (FIG. 2 (e)). The remaining part is cut and processed with FIB 1 (FIG. 2 (f)), and microsample 6, which is a separated sample, is cut out from sample 2. The separated sample 6 cut out is supported by the connected probe 3 (FIG. 2 (g)). When this micro sample 6 is processed with FIB 1 and the region to be observed is wall processed, a TEM sample (not shown) is obtained. This is a method of separating a micro sample including a desired analysis region from a sample such as a wafer by using FIB processing and a micro sample transport means. Analysis can be performed by introducing a micro sample separated by this method into various analyzers.

A similar sample preparation method is also disclosed in Japanese Patent Application Laid-Open No. 09-196213, “Micro Sample Preparation Apparatus and Method” (Patent Document 2). In this method, as shown in FIG. 9, first, FIB 1 is irradiated to form marks 403 and 404 for target position identification, and then rectangular holes 401 and 402 are formed in the sample 2 on both outer sides thereof (see FIG. 9). FIG. 9 (a)). Next, a rectangular groove 406 is formed by FIB 1 (FIG. 9B).
Next, by tilting the sample stage and irradiating the sample surface with the FIB 1 obliquely, the oblique groove 408 is formed, and the extracted sample 407 connected only by the sample 4 and a part of the support portion 405 is formed (FIG. 9). (c)). The inclination of the sample stage is returned, and the probe 3 is controlled by the probe control device and brought into contact with a part of the extracted sample 407. The extracted sample support portion 405 will be cut later by FIB. However, in consideration of probe drift, etc., it is desirable to cut the support portion 405 in a short time. For this reason, since there exists a possibility that the support part 405 may be destroyed by the contact of the probe 3, it contacts by suppressing damage as much as possible using the said probe control method. The contacted probe 7 and the extracted sample 407 are fixed using a deposition film 409 (FIG. 9 (d)). Next, the support part 405 is cut | disconnected by FIB1 (FIG.9 (e)). In this way, the extracted sample 407 is cut out, and the probe 3 is lifted by the probe driving device and extracted (FIG. 9 (f)). Next, the cut out sample 407 is brought into contact with the groove 411 formed in the sample holder (FIG. 9 (g)). The contact at this time needs to be brought into contact at a sufficiently small speed so that the extracted sample 407 is not destroyed or the extracted sample 407 is removed and disappears at the deposition film 409, and the above contact method is required. After contacting in this way, both are fixed using the deposition film 412 (FIG. 9 (h)). After fixing, FIB is irradiated to the probe 3 connection portion, sputter processing is performed, and the probe is separated from the extracted sample 407 (FIG. 9 (i)). When a TEM sample is used, finally, FIB 1 is irradiated again, and finally the observation region 410 is finished to a thickness of about 100 nm or less (FIG. 9 (j)). When used for preparation of other samples for analysis and measurement, the processing for thinning the observation region (FIG. 9 (j)) is not necessarily required.

  The above is an example of adopting a method of taking out a micro sample with a sample preparation device. However, with the sample preparation device, the shape of the micro sample is processed, the substrate is taken out from the sample preparation device, and another mechanism is used in the atmosphere. There is also a method of taking out a micro sample. For example, it is entitled “Focused Ion Beam Milling and Micromanipulation Lift-Out for Site Specific Cross-Section TEM Specimen Preparation” by LA Giannuzzi et al. It is explained in the paper. Similarly, from page 199 to page 205 of the Proceedings of the 22nd International Symposium for Testing and Failure Analysis, it is titled “TEM Sample Preparation Using a Focused Ion Beam and a Probe Manipulator” (Non-patent Document 2). It is also explained in the paper.

As shown in FIG. 3A, both sides of the target position on the wafer 208 are processed stepwise with FIB1 to produce a cross-sectional sample thin film 207, and then the sample stage is tilted to obtain FIB1. The angle formed with the sample surface is changed, the sample is irradiated, and as shown in FIG. 3B, the periphery of the sample thin film is cut by FIB1 to separate the sample thin film 207 from the wafer.
Then, the wafer is taken out from the FIB apparatus, the glass rod is brought close to the processing portion in the atmosphere, the sample thin film 207 is adsorbed to the glass rod using static electricity and taken out from the wafer, and the glass rod is moved to the mesh 209. It is electrostatically adsorbed on the mesh or installed so that the processing surface faces the transparent adhesive. Thus, even if the processed micro sample is not taken out in the apparatus, even if most of the outer shape of the micro sample is processed by the ion beam, it can be analyzed by introducing the separated micro sample into the TEM.

  If these methods are used, it is possible to take out only a minute sample or a thin sample for inspection from the sample without dividing the wafer, and return the taken wafer to the next process. Accordingly, there is no semiconductor device lost due to the division of the wafer as in the prior art, and the manufacturing yield of the total semiconductor devices can be increased and the manufacturing cost can be reduced.

JP 05-52721 A JP 09-196213 A L.A. Giannuzzi et al., “Focused Ion Beam Milling and Micromanipulation Lift-Out for Site Specific Cross-Section TEM Specimen Preparation”, Material Research Society, Symposium Proceeding vol.480, p.19-27 L.R.Herlinger et al., “TEM Sample Preparation Using a Focused Ion Beam and a Probe Manipulator”, Proceedings of the 22nd International Symposium for Testing and Failure Analysis, p.199-205

The conventional methods described above have the following problems. In other words, in order to form the bottom hole 8 in the cited document 1, to form the oblique groove 408 in the cited document 2, and in the non-cited document 2, in order to cut the periphery of the sample thin film 207, the sample 2 is an indispensable process. The inclination angle is changed by the sample stage. However, as the wafer diameter increases, the sample stage also increases in size. It takes time to tilt the large stage with high accuracy, resulting in a problem that the sample preparation time becomes long. Also, due to the large weight of the sample stage itself, the sample position relative to the FIB optical system moves without maintaining the eucentric before and after tilting, so the FIB focus deviates relatively from the sample surface and the sample surface is observed. There is a problem that the FIB optical system must be readjusted. In addition, the tilting function of the sample stage is a cause of increasing the size of the sample stage itself and the sample chamber containing the sample stage.
The current trend is where the wafer diameter has shifted from 200 mm to 300 mm. If the wafer diameter further advances to 400 mm, the stage must be enlarged, and the above-mentioned problems associated with the sample stage tilt cannot be avoided. . On the other hand, if the tilt function can be omitted from the sample stage of the apparatus, the entire apparatus can be miniaturized and the problems such as the sample position shift caused by the sample tilt can be solved. ), Or preparing a sample for separation, it becomes impossible to realize sample preparation for micro area analysis, observation, and measurement. In the first place, it was indispensable to change the attitude of the sample tilt angle. In order to separate or prepare a micro sample from the original sample, it is necessary to irradiate the sample surface with ion beams at different angles in at least two directions. This is because there was a stereotype of indispensable. Here, the stage tilt refers to rotating the stage about a line segment included in the stage surface or a parallel line segment as an axis, and is simply referred to as the stage tilt hereinafter.

  In view of the above-mentioned problems, the first object of the present application is to break a conventional fixed idea and to tilt a sample stage from an original sample such as an electronic component such as a semiconductor wafer or a device. An object of the present invention is to provide a sample preparation method for micro area analysis, observation, and measurement by separating or preparing a micro sample to be included. A second object is to provide a sample preparation apparatus suitable for achieving the first object.

  The first object as described above is achieved by the following.

  Basic elements of the present invention for breaking the conventional fixed idea that the change in the tilt angle of the sample is indispensable are: (1) a sample mounting surface, an ion beam irradiation axis on the sample, and The ion beam machining method is characterized in that the sample is irradiated with an ion beam from a plurality of directions and a desired portion of the sample is separated or prepared for separation.

  According to the ion beam processing method of this means, a micro sample including a desired specific region is separated or prepared from a sample such as an electronic component such as a semiconductor wafer or a device without tilting the sample stage, and micro region analysis is performed. And an ion beam processing method for observation and measurement.

  (2) The angle formed between the ion beam irradiation axis to the sample and the sample surface is set to be greater than 0 degree and less than 90 degrees, and the sample is irradiated with the ion beam, and the sample is irradiated with the ion beam irradiation axis and the sample surface. The sample separation method is characterized in that a desired portion of the sample is separated or prepared for preparation by ion beam irradiation.

According to the sample preparation method of this means, a minute sample including a desired specific region is separated or prepared for separation from a sample such as an electronic component such as a semiconductor wafer or a device without tilting the sample stage. A sample preparation method for observation and measurement can be realized. Also,
(3) The angle between the ion beam irradiation axis to the sample and the sample surface is set to 30 to 75 degrees, the ion beam is irradiated to the sample, and the angle between the ion beam irradiation axis to the sample and the sample surface is fixed. Thus, a sample separation method is characterized in that a desired portion of the sample is separated or prepared by ion beam irradiation.

  According to the sample preparation method of this means, a minute sample including a desired specific region is separated or prepared for separation from a sample such as an electronic component such as a semiconductor wafer or a device without tilting the sample stage. A sample preparation method for observation and measurement can be realized. In particular, when the FIB irradiation angle is 30 to 75 degrees, observation of the sample surface is suitable, and a minute sample shape can also be made suitable for production. (4) a focused ion beam irradiation optical system, secondary particle detecting means for detecting secondary particles generated from the sample by the focused ion beam irradiation, and a sample stage on which the sample substrate is placed; In a sample preparation method for separating or preparing for a micro sample from a sample using a sample preparation apparatus having at least the above, the angle formed between the focused ion beam irradiation axis of the sample and the sample surface exceeds 90 degrees and is at most 90 degrees. The sample is irradiated with a focused ion beam at a temperature of less than 1 degree, and then the sample is rotated with the sample surface normal as the rotation axis, and the angle between the focused ion beam irradiation axis on the sample and the sample surface is fixed and the sample is irradiated. However, the above object can also be realized as a sample preparation method characterized by separating or preparing for a small sample.

  That is, an element of the present invention for breaking the conventional fixed idea is to incorporate a rotation operation around the sample surface normal line of the sample stage into the sample preparation method in accordance with the purpose. According to the sample preparation method of this means, a minute sample including a desired specific region is separated or prepared for separation from a sample such as an electronic component such as a semiconductor wafer or a device without tilting the sample stage. A sample preparation method for observation and measurement can be realized.

  Even when the sample stage is an apparatus having a tilt function, the tilt time of the stage is not required, and the sample preparation time is relatively shortened. Moreover, the problem that the sample surface cannot be observed before and after the inclination of the sample stage is reduced.

  (5) The sample preparation method according to (4), wherein a desired portion of the sample is supported by a probe.

  According to the sample preparation method of this means, a micro sample including a desired specific region is separated from a sample such as an electronic component such as a semiconductor wafer or a device without tilting the sample stage, and micro region analysis, observation or measurement is performed. Sample preparation method can be realized. Further, by supporting the micro sample with the probe and extracting it from the sample substrate, the cross section of the micro sample can be observed in detail, and the cross-section processing position can be controlled with high accuracy. The method for supporting the micro sample may be any method that can indicate the micro sample, such as fixing with a deposition film or fixing with electrostatic force.

  (6) A sample preparation method for observation, analysis or measurement, wherein the angle formed between the focused ion beam irradiation axis of the sample and the sample surface is an angle between 0 ° and 90 ° at most. A step of forming a square hole by irradiating the sample with a beam, a step of rotating the sample with the sample surface normal as a rotation axis, and forming a diagonal groove with respect to the surface of the sample substrate by focused ion beam irradiation after the rotation. A step of forming a cantilever sample held by a support portion on a sample substrate, a step of bringing the desired portion of the transfer means into contact with a desired portion of the cantilever sample, and irradiating the deposition gas with the contact Forming a deposition film by irradiating a focused ion beam to a region including the portion, fixing the cantilever sample to a desired portion of the transfer means, and irradiating the focused ion beam to the support. And cutting the part, and the sample preparation method, which comprises a.

  According to the sample preparation method of this means, a minute sample including a desired specific region is separated or prepared for separation from a sample such as an electronic component such as a semiconductor wafer or a device without tilting the sample stage. A sample preparation method for observation and measurement can be realized. In addition, it is possible to observe a minute sample section in detail, and the section processing position can be controlled with high accuracy.

  (7) A sample preparation method for observation, analysis or measurement, wherein the angle between the focused ion beam irradiation axis of the sample and the sample surface is set to be greater than 0 degree and less than 90 degrees at most, and the focused ion beam The step of forming a square hole by irradiating and forming a thin film, the step of rotating the sample with the sample surface normal as the rotation axis, and separating or separating the sample thin film by focused ion beam irradiation after the rotation And a preparing step.

  According to the sample preparation method of this means, a minute sample including a desired specific region is separated or prepared for separation from a sample such as an electronic component such as a semiconductor wafer or a device without tilting the sample stage. A sample preparation method for observation and measurement can be realized. In addition, since a process such as ion beam assist deposition is not included, the sample preparation time can be shortened.

  (8) In the sample preparation method described in (3), (4), (5), (6), (7) above, a plurality of micro sample preparation methods, wherein at least two or more micro samples are separated or In order to prepare for separation, the sample preparation method is characterized in that after processing the periphery of the micro sample to the middle of the whole process with an ion beam, the sample is rotated next, and then processing around each micro sample is continued.

  According to the sample preparation method of this means, a minute sample including a desired specific region is separated or prepared for separation from a sample such as an electronic component such as a semiconductor wafer or a device without tilting the sample stage. A sample preparation method for observation and measurement can be realized. In particular, a plurality of samples can be manufactured with high throughput.

  The second object is achieved by the following way.

  (9) A focused ion beam irradiation optical system in a focused ion beam apparatus that has at least a focused ion beam irradiation optical system and a sample stage on which a sample substrate is placed, and separates or prepares a minute sample from the sample substrate. Including a means for separating a desired portion of the sample and a probe for supporting the separated sample. A sample preparation apparatus characterized by the above.

  According to the sample preparation apparatus of this means, a micro sample including a desired specific region is separated or prepared from a sample such as an electronic component such as a semiconductor wafer or a device without tilting the sample stage, and micro region analysis or A sample preparation device for preparing a sample for observation and measurement can be realized. Further, by supporting the micro sample with the probe and extracting it from the sample substrate, it becomes possible to observe the cross section of the micro sample in detail, and a sample preparation apparatus capable of controlling the cross-section processing position with high accuracy can be realized. The method for supporting the micro sample may be any method that can indicate the micro sample, such as fixing with a deposition film or fixing with electrostatic force.

  (10) At least a focused ion beam irradiation optical system, secondary particle detecting means for detecting secondary particles generated from the sample by irradiation of the focused ion beam, and a sample stage on which a sample substrate is placed; In a sample preparation apparatus that separates or prepares for separation of a micro sample from a sample substrate, the angle formed by the focused ion beam irradiation axis on the sample and the sample surface is greater than 0 degree and less than 90 degrees, and the sample stage is the sample stage It has a function to rotate the surface normal as a rotation axis, and the irradiation position of the focused ion beam that separates or prepares the sample after rotation is adjusted by the irradiation of the focused ion beam or the electron beam from the electron beam irradiation system provided separately. Having a function of determining by using an image display means for displaying a secondary particle image formed by secondary particles generated from a sample The sample preparation apparatus according to claim.

  According to the sample preparation apparatus of this means, a micro sample including a desired specific region is separated or prepared from a sample such as an electronic component such as a semiconductor wafer or a device without tilting the sample stage, and micro region analysis or Suitable for automating the operation of equipment for preparing specimens for observation and measurement, and reducing the burden on the operator. A device can be realized.

  (11) At least a focused ion beam irradiation optical system, secondary particle detecting means for detecting secondary particles generated from the sample by irradiation of the focused ion beam, and a sample stage on which a sample substrate is placed; In a sample preparation apparatus that separates or prepares for separation of a micro sample from a sample substrate, the angle formed by the focused ion beam irradiation axis on the sample and the sample surface is more than 0 degree and less than 90 degrees, and the sample stage is the sample surface The sample has a function of rotating with the normal as a rotation axis, and the irradiation position of the focused ion beam that separates or prepares the sample after the rotation is irradiated by the focused ion beam or an electron beam from a separately provided electron beam irradiation system. A sample having a function of determining using a result of image processing of a secondary particle image formed by secondary particles generated from And manufacturing equipment.

  According to the sample preparation apparatus of this means, a micro sample including a desired specific region is separated or prepared from a sample such as an electronic component such as a semiconductor wafer or a device without tilting the sample stage, and micro region analysis or Suitable for automating the operation of equipment for preparing specimens for observation and measurement, and reducing the burden on the operator. A device can be realized.

  (12) at least a focused ion beam irradiation optical system, secondary particle detecting means for detecting secondary particles generated from the sample by irradiation of the focused ion beam, and a sample stage on which a sample substrate is placed; In a sample preparation apparatus that separates or prepares for separation of a micro sample from a sample substrate, the angle formed by the focused ion beam irradiation axis on the sample and the sample surface is in the range of 30 to 75 degrees, and the sample stage shows the sample surface normal. It has a function of rotating as a rotating shaft, and has a transfer means for transferring an extracted microsample from which a desired portion of the sample substrate is separated to another member, and a holding means for a sample holder on which the microextracted sample is placed. The sample preparation apparatus is characterized by this.

  According to the sample preparation apparatus of this means, a micro sample including a desired specific region is separated or prepared from a sample such as an electronic component such as a semiconductor wafer or a device without tilting the sample stage, and micro region analysis or It is suitable for preparing samples for observation and measurement. Especially, when the FIB irradiation angle is 30 to 75 degrees, observation of the sample surface is suitable, and the shape of the micro sample is also suitable for production. be able to. Furthermore, a sample preparation apparatus that enables sample preparation in a short time can be realized.

  (13) At least a focused ion beam irradiation optical system, secondary particle detecting means for detecting secondary particles generated from the sample by irradiation of the focused ion beam, and a sample stage on which a sample substrate is placed; In a sample preparation apparatus that separates or prepares a minute sample from a sample substrate, the angle formed by the focused ion beam irradiation axis on the sample and the sample surface is 45 degrees, and the sample stage rotates with the sample surface normal as the rotation axis And a transfer means for transferring the extracted microsample separated from a desired portion of the sample substrate to another member, and a holding means for a sample holder for mounting the microextracted sample. A sample preparation apparatus is used.

  According to the sample preparation apparatus of this means, a micro sample including a desired specific region is separated or prepared from a sample such as an electronic component such as a semiconductor wafer or a device without tilting the sample stage, and micro region analysis or When preparing samples for observation and measurement, both the sample surface and the sample cross section are observed by FIB irradiation, the FIB irradiation angle can be 45 degrees in both cases, and both can be performed under the same conditions. Therefore, it is possible to realize a sample preparation apparatus that is suitable for separating or preparing for a sample, and with less damage to the surface of the sample and enabling sample preparation in a short time.

  (14) In the sample preparation device described in (10), (11), (12) and (13) above, the focused ion beam irradiation axis to the sample is substantially centrally symmetric, which is a component of the focused ion beam irradiation optical system. The sample preparation apparatus is characterized in that it substantially coincides with the mechanical central axis of the objective lens.

  According to the sample preparation apparatus of this means, a micro sample including a desired specific region is separated or prepared from a sample such as an electronic component such as a semiconductor wafer or a device without tilting the sample stage, and micro region analysis or In order to realize a sample preparation device that enables the preparation of samples for observation and measurement, the angle between the objective lens, which is a component of the focused ion beam irradiation optical system, and the sample stage surface is mechanically defined. This makes it possible to simplify the device design.

  (15) At least a focused ion beam irradiation optical system, secondary particle detecting means for detecting secondary particles generated from the sample by the focused ion beam irradiation, and a sample stage on which the sample substrate is placed In order to separate a micro sample from a sample substrate or to prepare for separation, a sample is prepared by irradiating the sample substrate with a focused ion beam from a plurality of incident directions to separate or prepare a micro sample. In this apparatus, the focused ion beam irradiation optical system is provided with a focused ion beam tilting function capable of changing the focused ion beam irradiation axis to the sample by at least 15 degrees.

  According to the sample preparation apparatus of this means, a micro sample including a desired specific region is separated or prepared from a sample such as an electronic component such as a semiconductor wafer or a device without tilting the sample stage, and micro region analysis or A sample preparation apparatus that enables preparation of a sample for observation and measurement is realized by a focused ion beam tilting function that can change the incident direction of the focused ion beam by at least 15 degrees. In particular, since a focused ion beam incident angle can be selected in sample preparation, various sample preparation methods and sample shapes can be realized.

  (16) The sample stage of the mechanical column including the focused ion beam irradiation optical system in which the focused ion beam irradiation axis on the sample can be changed by at least 15 degrees in the sample preparation apparatus according to (15). The sample preparation apparatus is realized by a variable tilt angle mechanism.

  According to the sample preparation apparatus of this means, a micro sample including a desired specific region is separated or prepared from a sample such as an electronic component such as a semiconductor wafer or a device without tilting the sample stage, and micro region analysis or A sample preparation apparatus that enables preparation of a sample for observation and measurement is realized by a variable tilt angle mechanism for a sample stage of a mechanical column including a focused ion beam irradiation system. In particular, since a focused ion beam incident angle can be selected in sample preparation, various sample preparation methods and sample shapes can be realized.

  (17) The sample preparation apparatus according to (15), wherein the focused ion beam tilting function capable of changing a focused ion beam irradiation axis to the sample by at least 15 degrees is realized by an electrical deflection mechanism. A manufacturing apparatus is used.

  According to the sample preparation apparatus of this means, a micro sample including a desired specific region is separated or prepared from a sample such as an electronic component such as a semiconductor wafer or a device without tilting the sample stage, and micro region analysis or A sample preparation apparatus that enables preparation of a sample for observation and measurement is realized by an electrical deflection mechanism. In particular, the mechanical device configuration is simplified, the manufacturing cost can be reduced, and the incident angle of the focused ion beam can be selected in sample preparation, so that various sample preparation methods and sample shapes can be realized.

  (18) In the sample preparation device described in (10), (11), (12), (13), (14), (15), (16), and (17), the sample stage is in the stage surface. A sample preparation apparatus characterized by having a structure in which an inclination angle with a line segment included in or a parallel line segment as an inclination axis is fixed. And

  According to the sample preparation apparatus of this means, since the sample stage does not have a tilt function, the entire apparatus can be miniaturized and a micro sample including a desired specific region from a sample such as an electronic component such as a semiconductor wafer or a device. Can be separated or prepared for preparation, and a sample preparation apparatus that can prepare a sample for micro-region analysis, observation, and measurement can be realized.

  (19) In the sample preparation device described in (9), (10), (11), (12), (13), (14), (15), (16), and (17), the sample stage is A sample preparation apparatus comprising a stage that rotates at a specific fixed angle and a stage that can rotate at an arbitrary angle.

  According to the sample preparation apparatus of this means, since the sample stage does not have a tilt function, the entire apparatus can be miniaturized and a micro sample including a desired specific region from a sample such as an electronic component such as a semiconductor wafer or a device. Can be separated or prepared for preparation, and a sample preparation apparatus that can prepare a sample for micro-region analysis, observation, and measurement can be realized. In particular, it is suitable for saving the time required for alignment and increasing the throughput of sample preparation.

  (20) In the sample preparation device described in (9), (10), (11), (12), (13), (14), (15), (16), and (17), the sample stage is , 90 ° and 180 °, a sample rotating apparatus comprising a stage that rotates at a fixed angle of at least one and a stage that can rotate at an arbitrary angle.

  According to the sample preparation apparatus of this means, since the sample stage does not have a tilt function, the entire apparatus can be miniaturized and a micro sample including a desired specific region from a sample such as an electronic component such as a semiconductor wafer or a device. Can be separated or prepared for preparation, and a sample preparation apparatus that can prepare a sample for micro-region analysis, observation, and measurement can be realized. In particular, it is suitable for saving the time required for alignment and increasing the throughput of sample preparation.

  In the sample preparation method according to the present application, the angle formed between the FIB and the sample surface is not changed in a series of steps of separating the micro sample from the sample substrate, and the step of tilting the stage is not included. Therefore, in the sample preparation method according to the present application, in order to reduce the size of the entire apparatus, even if the tilt function of the sample stage is omitted, the micro sample is separated from or prepared for separation, and the sample for micro area analysis, observation, and measurement is used. Fabrication is possible. Further, even when the sample stage is an apparatus having a tilt function, it is not necessary to tilt the stage, and the sample preparation time is relatively shortened. Moreover, the problem that the sample surface cannot be observed before and after the inclination of the sample stage is reduced.

  In addition, according to the sample preparation apparatus according to the present application, it is possible to separate or prepare a minute sample from the sample, and to prepare a sample for minute region analysis, observation, and measurement, automating the operation of the apparatus, and reducing the burden on the operator. A sample preparation apparatus suitable from the viewpoint is provided.

  In the embodiment of the sample preparation apparatus according to the present invention, the focused ion beam is irradiated at an angle between the sample surface on the stage and the focused ion beam irradiation axis exceeding 0 degree and at most less than 90 degrees. A configuration having at least a focused ion beam irradiation optical system, a secondary particle detection means for detecting secondary particles generated from the sample by irradiation of the focused ion beam, and a sample stage having a structure without an inclination mechanism And

Below, the concrete example of embodiment is shown.
<Embodiment 1>
A schematic configuration diagram of a sample preparation apparatus according to an embodiment of the present application will be described with reference to FIG.

The sample preparation device 17 includes a vacuum container 41, and an FIB irradiation optical system including an ion source 32, a beam limiting aperture 33, an ion beam scanning electrode 34, an ion beam lens 31, and the like is included in the vacuum container. 35, a secondary particle detector 36 for detecting secondary electrons and secondary ions emitted from the sample by FIB irradiation, a depot gas source 37 for supplying a source material gas for forming a deposition film in the ion beam irradiation region, a manipulator 42, a probe 3 attached to the tip, a sample stage 39 on which a sample substrate 38 such as a semiconductor wafer or a semiconductor chip is placed, a sample holder 40 for fixing a minute extracted sample obtained by extracting a part of the sample substrate, and the like are arranged. . Here, the FIB irradiation optical system 35 is installed with respect to the stage 39 so that the angle formed by the approximate center axis of the objective lens 44 and the sample surface is 45 degrees. The sample stage has a function of rotating a vertical line segment with respect to the sample surface as a rotation axis. Further, as a device for controlling this device, a stage control device 61, a manipulator control device 62, a secondary electron detector amplifier 63, a deposition gas source control device 64, an FIB control device 65, and a calculation mainly composed of an electric circuit or an arithmetic device. A processing device 74 and the like are arranged. The calculation processing device 74 has a function of recognizing the sample shape by performing image processing on a secondary electron image formed by secondary electrons generated from the sample by the FIB irradiation.
In addition, the FIB controller 65 has a function of irradiating a desired position of the sample shape with the FIB control device 65 based on the sample shape information.

Next, the operation of the sample preparation apparatus will be described. First, the sample substrate 38 is irradiated with ions emitted from the ion source 32 through the beam limiting aperture 33, the ion beam lens 31, and the objective lens 44. FIB 1 is bundled to a diameter of several nanometers to about 1 micrometer on the sample. When the sample substrate 38 is irradiated with the FIB 1, constituent atoms on the sample surface are released into the vacuum by a sputtering phenomenon. Therefore, by scanning the FIB 1 using the ion beam scanning electrode 34, processing from the micrometer level to the submicrometer level can be performed. Further, the deposition film can be formed by irradiating the sample substrate 38 with the FIB 1 while introducing the deposition gas into the sample chamber. In this way, the sample substrate 38 can be processed by skillfully using sputtering or deposition by the FIB 1.
The deposition film formed by FIB 1 irradiation is used to connect the contact portion at the tip of the probe 3 and the sample, or to fix the extracted sample to the sample holder 40. Also, the FIB 1 is scanned, secondary electrons and secondary ions emitted from the sample are detected by the secondary particle detector 36, and the intensity is converted into the luminance of the image, thereby the sample substrate 38, the probe 3, etc. Can be observed.

Next, a sample preparation method according to an embodiment of the present application will be described with reference to FIG. Here, in order to understand FIG. 1, as a supplement to FIG. 8, FIG. 8 shows a square hole 501 (a) produced with the FIB irradiation axis normal to the sample surface, and the FIB irradiation axis at 45 degrees with respect to the sample surface. The produced square hole 502 (b) is shown for reference. For sample preparation, first, a mark indicating the position of thin film preparation for TEM observation and a protective film are formed on the substrate. Next, the FIB 1 is scanned on the sample substrate in a rectangle whose side is projected from the FIB irradiation axis on the substrate surface, and two square holes 101 (about 15 μm deep inclined in the depth direction) ( Similarly to FIG. A), a notch groove 102 (FIG. B) inclined in the depth direction is formed. The FIB irradiation axis is 45 degrees with respect to the sample surface. Next, the sample is rotated about 180 degrees with the axis perpendicular to the sample surface as the rotation axis. Here, the secondary electron image formed by the secondary electrons generated from the sample by the irradiation of FIB 1 is subjected to image processing, thereby recognizing the two square holes formed so far and the notch groove. Then, the FIB controller 65 controls the FIB irradiation position based on the sample shape information, and similarly, the groove 103 inclined in the depth direction is formed (FIG. C). Next, the probe control device is driven to bring the tip of the probe 3 into contact with the microsample 6 on the substrate. Next, a deposition gas is supplied from the gas nozzle, and FIB 1 is locally irradiated onto the region including the tip of probe 3 to form deposition film 105 and connect the separated portion of the substrate in contact with probe 3. (Figure d). The microsample 6 is supported by the connected probe 3 by cutting the support portion 104 with the FIB 1 (FIG. E). The microsample 6 can be extracted by moving the probe 3 upward (FIG. F). The subsequent steps are the same as in the prior art.
That is, while the probe is stopped above the sample surface, the sample stage is operated to move the microsample to the sample mesh. The micro sample is fixed to the sample mesh with a deposition membrane. Cut the probe with FIB and separate it from the micro sample. Finally, the observation region in this micro sample is thinned to a thickness of about 100 nm by FIB to complete the TEM sample.

  In this method, the sample is rotated by approximately 180 degrees to form the groove inclined in the depth direction in Fig. C.However, it is rotated by approximately 90 degrees with the axis perpendicular to the sample surface as the rotation axis. And may be formed. The microsample shape in this case is as shown in FIG. 5 (a), and in the above example, which is performed by rotating the sample by about 180 degrees, it is as shown in FIG. 5 (b). In addition, two square holes (Fig. A), a notch groove (Fig. B) inclined in the same direction in the depth direction, and a groove (Fig. C) formed by rotating the sample about 180 degrees or 90 degrees There is no particular limitation on the order.

  In the present embodiment, the image processing is performed on the secondary electron image formed by the secondary electrons generated from the sample by the FIB irradiation, thereby recognizing the two square holes formed so far and the notch groove. The FIB irradiation position was controlled by the FIB controller based on the sample shape information. As a result, the operation can be automated and the burden on the operator can be reduced. However, it is not always necessary to use an image processing apparatus, and the apparatus operator may control the FIB irradiation position by observing the secondary electron image on the image display apparatus.

  When a plurality of micro samples are manufactured, each sample can be manufactured in order. First, two square holes 101 having a depth of about 15 μm inclined in the depth direction (see FIG. In the same manner, first, a required number of notch grooves 102 (FIG. B) inclined in the depth direction are formed in a required place for a plurality of samples. Next, the sample is rotated about 180 degrees with the axis perpendicular to the sample surface as the rotation axis. Next, following the alignment of each sample, a groove 103 inclined in the depth direction with respect to each sample is formed (FIG. C). Next, the probe control device is driven, and a plurality of microsamples 6 are prepared according to the order using the probe 3. In this way, since a relatively time-consuming rotation operation can be reduced, it is possible to manufacture a plurality of samples with a higher throughput than manufacturing each sample in order.

In the embodiment described above, the angle formed between the FIB and the sample surface is not changed by 45 degrees in a series of steps for separating the micro sample from the sample substrate. That is, the step of tilting the stage is not included. Therefore, according to the present embodiment, in order to reduce the size of the entire apparatus, even if the tilt function of the sample stage is omitted, the sample for separation or preparation for separation is prepared from the sample, and the sample for minute region analysis, observation, and measurement is used. Fabrication is possible.
Further, unlike the present embodiment, even when the sample stage has an inclination function, the present invention is effective, the stage does not need to be inclined, and the sample preparation time is relatively shortened. Moreover, the problem that the sample surface cannot be observed before and after the inclination of the sample stage is reduced. Further, in the present embodiment, since the micro sample is extracted from the sample substrate when processing the thin film for the TEM sample, the cross section of the micro sample can be observed in detail, and the cross section processing position can be controlled with high accuracy.

  In addition, according to the present embodiment, it is possible to separate or prepare a micro sample from a sample, and to prepare a sample for micro region analysis, observation, and measurement, automating the operation of the apparatus, and reducing the burden on the operator A suitable sample preparation apparatus is provided.

  Further, in this embodiment, the sample stage is configured by combining a stage that rotates at a specific fixed angle and a stage that can rotate at an arbitrary angle. The stage rotating at a fixed angle is operated by the 180 degree rotation or 90 degree rotation described above. A stage rotating at an arbitrary angle is operated by adjusting a processing position on the sample. In general, the accuracy of determining the rotation angle of an arbitrary angle rotation stage is at most 0.01 degrees. As in this embodiment, the accuracy is insufficient when fine alignment is required after rotation. However, it is possible to further increase the rotation accuracy in the stage having only a function of rotation at a specific fixed angle. Therefore, operating the stage that rotates at a fixed angle to align the processing position after rotating 180 degrees or 90 degrees in this embodiment saves the time required for alignment and the throughput of sample preparation. It becomes suitable for raising.

  In this embodiment, the FIB irradiation axis is set to 45 degrees with respect to the sample surface. However, when the angle is set to 45 degrees, both the sample surface and the sample cross section are observed by FIB irradiation. Since the irradiation angle is 45 degrees and both can be performed under the same conditions, it is suitable for separating or preparing for the sample. However, it is not necessarily limited to 45 degrees, and the effect of the present invention can be obtained if the angle is less than 90 degrees. However, if the FIB irradiation axis is less than 30 degrees with respect to the sample surface, the processing area for separating the micro sample is expanded, and the sample surface is wasted. In addition, when the angle exceeds 75 degrees, the angle with respect to the actual processing wall surface is close to 90 degrees, the processing depth for separating the micro sample increases, the processing time becomes longer, and the micro sample cannot be separated. It may become. Therefore, in order to separate a minute sample, the angle formed between the sample irradiation axis of the beam and the sample surface is preferably in the range of 30 degrees to 75 degrees.

  Further, in this embodiment, the mechanical central axis of the objective lens of the focused ion beam irradiation system is set at an angle of 45 degrees with respect to the sample substrate surface so that the FIB irradiation axis is 45 degrees with respect to the sample surface. However, even if it is set to other than 45 degrees, the FIB irradiation axis can be set to 45 degrees with respect to the sample surface by ion beam deflection.

  In the embodiment described above, a semiconductor wafer having a planar shape is taken as an example as a sample. However, the present invention is effective for a sample having an arbitrary shape even if it is not necessarily a planar sample. In the above description, the angle between the sample surface and the ion beam sample irradiation axis is described. However, in the case of a sample of an arbitrary shape, the sample may be manufactured by fixing the angle with the sample mounting surface of the sample stage. For example, the present invention can also be applied to so-called micromachining in which a minute part is separated from a sample according to the present invention and connected to another minute part to produce a minute mechanical structure or a minute device.

  That is, a sample preparation apparatus suitable for carrying out this example has a structure in which the angle formed between the approximate central axis of the mechanical column including the focused ion beam irradiation optical system and the sample mounting surface of the sample stage is fixed. A sample preparation apparatus including a means for separating a desired portion of the sample and a probe for supporting the separated sample may be used. In the case of a semiconductor wafer having a flat shape as a sample, the sample mounting surface and the sample surface are parallel surfaces, the angle formed by the sample irradiation axis of the focused ion beam and the sample surface, and the sample irradiation axis of the focused ion beam. Needless to say, the angle formed by the sample placement surface of the sample stage is synonymous.

In the present embodiment, the focused ion beam is scanned over the sample. At this time, the incident angle of the focused ion beam to the sample varies minutely depending on the scanning position. The change in the incident angle of the ion beam accompanying such scanning depends on the sample irradiation axis of the focused ion beam and the sample surface. It is not included in the angle change. That is, even if the focused ion beam is scanned on the sample, the angle between the sample irradiation axis of the focused ion beam and the sample surface can be fixed. Further, the sample irradiation axis of the focused ion beam refers to the center line of the ion beam when the ion beam is incident on the sample surface when scanning is stopped and there is no deflection by the scanning electrode.
<Embodiment 2>
Next, another sample manufacturing method according to an embodiment of the present application will be described with reference to FIGS. The sample preparation apparatus is the same as the apparatus shown in FIG.

  First, a mark and a protective film indicating the position for producing a thin film for TEM observation are formed on a sample substrate. Two square holes 301 having a depth of about 15 μm inclined in the depth direction by scanning the FIB over the sample substrate in a rectangle with one side projected from the irradiation axis of the FIB 1 on the substrate surface onto the sample surface (FIG. A) Form. Here, the target sample is a thin film between two square holes, and its thickness is about 100 nm. Next, both ends 302 of the thin film portion are cut. Next, the sample is rotated about 90 degrees with the axis perpendicular to the sample surface as the rotation axis. Here, by processing the secondary electron image formed by the secondary electrons generated from the sample by the irradiation of FIB 1, the two square hole notches 301 formed so far are recognized. Then, the FIB controller 65 controls the FIB irradiation position based on the sample shape information, and the sample thin film base is cut off by FIB1 as shown in FIG. C to separate the sample thin film 303 from the sample substrate. Alternatively, even if the separation does not occur, as preparation for separation in a subsequent process, the processing is finished with an instruction portion that can be broken by a slight impact. Thereafter, the sample substrate is taken out from the sample preparation device, and the sample thin film 303 is moved from the sample substrate to the TEM sample holder using the static electricity of the glass rod 304 in the atmosphere. Here, when the sample thin film 303 that is a micro sample is not completely separated, the glass thin film 304 is similarly cut after the sample thin film 303 is separated from the sample substrate by applying an impact to the minute sample indicating portion by the glass rod 304. The sample thin film 303 is moved from the sample substrate to the TEM sample holder using the static electricity. As described above, the present invention includes a sample preparation method and a sample preparation apparatus that process most of the outer shape of a micro sample with an ion beam without taking out the sample thin film 303 as a micro sample in the apparatus.

In this method (FIG. B), the sample is cut about 90 degrees before turning at least one of the both sides of the sample flake, but it may be done after the rotation.
There are no particular restrictions on the order of formation, for example, the preparation of two square holes, the cutting of both sides of the sample flakes, and the cutting of the bottom of the sample flakes.

  In the present embodiment, image processing is used, but the apparatus operator may observe the secondary electron image and control the FIB irradiation position as in the first embodiment.

  In the embodiment described above, the angle formed between the FIB and the sample surface is not changed by 45 degrees in a series of steps for separating or preparing for the sample from the sample substrate. That is, the step of tilting the stage is not included. Therefore, according to the present embodiment, in order to reduce the size of the entire apparatus, even if the tilt function of the sample stage is omitted, the sample for separation or preparation for separation is prepared from the sample, and the sample for minute region analysis, observation, and measurement Fabrication is possible. Further, unlike the present embodiment, even when the sample stage has an inclination function, the stage is not inclined, and the sample preparation time is relatively shortened. Moreover, the problem that the sample surface cannot be observed before and after the inclination of the sample stage is reduced. Further, in this embodiment, since a micro sample exists in the sample substrate when processing the thin film for the TEM sample, the accuracy of the cross-sectional processing position is relatively lower than that in the first embodiment, but the probe operation or Since a process such as an ion beam assist deposition is not included for bonding the probe and the micro sample, the sample preparation time can be shortened.

As in the first embodiment, the FIB irradiation angle is not necessarily limited to 45 degrees, and the effects of the present invention can be obtained as long as the angle is less than 90 degrees.
<Embodiment 3>
Next, FIG. 7 shows a schematic configuration diagram of a sample manufacturing apparatus including an electron beam irradiation apparatus according to an embodiment of the present application. The sample preparation device 17 includes a vacuum container 41, and the configuration of the FIB irradiation optical system 35, the secondary particle detector 36, the deposition gas source 37, the probe 3, the sample stage 39, and the like are included in the vacuum container. This is the same as the sample preparation apparatus of the second embodiment. Similarly, the FIB irradiation optical system 35 is installed with respect to the stage 39 so that the FIB irradiation axis is 45 degrees with respect to the sample surface. The sample stage has a function of rotating a vertical line segment with respect to the sample surface as a rotation axis. In this apparatus, an electron beam irradiation system including a field emission electron gun 81 that emits an electron beam, an electron beam lens 82, an electron beam scanning electrode 83, and the like is installed.
In addition to the stage control device 61, the manipulator control device 62, the secondary electron detector amplifier 63, the deposition gas source control device 64, and the FIB control device 65, the electron gun control device 91, the electron optical system are used as devices for controlling this device. A control device 92, an electron beam scanning control device 93, a calculation processing device 74, and the like are arranged. The calculation processing device 74 has a function of recognizing the sample shape by performing image processing on the secondary electron image formed by the secondary electrons generated from the sample by the FIB irradiation or the electron beam 84 irradiation. In addition, the FIB controller 65 irradiates the desired position of the sample shape with the FIB controller 65 based on the sample shape information, and the function of irradiating the electron beam 84 with the electron beam 84 to the desired position of the sample shape.

  The operation of the FIB irradiation optical system 35 is the same as that of the second embodiment. Next, the electron beam irradiation operation will be described. The electron source of the electron beam irradiation apparatus is a field emission electron gun 81, and an electron beam scanning electrode 84 can aim at an arbitrary place on the substrate sample 38. It is also possible to scan and irradiate the processing area 42 irradiated with FIB. For this purpose, the following preparations are made in advance. First, the FIB 1 is focused in a spot shape and irradiated onto the sample. Next, the spot-shaped irradiation trace is scanned with the electron beam 84, secondary electrons are detected, and the spot-shaped irradiation trace is observed to clarify the relationship between the FIB1 irradiation position and the electron beam irradiation position. It is stored in the calculation processing device 74. Therefore, the processing status can be observed by automatically irradiating the FIB1 processing position with the electron beam from this stored information. As described above, these controls are performed uniformly by the calculation processing device 74.

  The sample preparation method is similar to the method described in the first embodiment and the second embodiment, but in the first and second embodiments, the FIB irradiation is used to control the irradiation position of the FIB. In this apparatus, the secondary electron image formed by the secondary electrons generated from the sample by the electron beam irradiation can be used. . When sample observation by electron beam irradiation is used, sample surface damage is far less and sample preparation is possible in a shorter time than sample preparation by FIB irradiation alone.

Further, according to the present embodiment, as in the first embodiment and the second embodiment, the micro sample is separated or prepared for separation from the sample, and the sample preparation for micro region analysis, observation, and measurement is performed. It goes without saying that a suitable sample preparation device is provided from the viewpoint that the operation of the device can be automated and the burden on the operator can be reduced.
<Embodiment example 4>
A schematic configuration diagram of a sample preparation apparatus according to an embodiment of the present application will be described with reference to FIG.

  In the present embodiment, the focused ion beam tilting function capable of changing the incident direction of the focused ion beam by at least 15 degrees is realized by the tilt angle variable mechanism for the sample stage of the mechanical column including the focused ion beam irradiation system.

  The sample preparation device 17 includes a vacuum container 41, and an FIB irradiation optical system including an ion source 32, a beam limiting aperture 33, an ion beam scanning electrode 34, an ion beam lens 31, and the like is included in the vacuum container. 35, a secondary particle detector 36 for detecting secondary electrons and secondary ions emitted from the sample by FIB irradiation, a depot gas source 37 for supplying a source material gas for forming a deposition film in the ion beam irradiation region, a manipulator 42, a probe 3 attached to the tip, a sample stage 39 on which a sample substrate 38 such as a semiconductor wafer or a semiconductor chip is placed, a sample holder 40 for fixing a minute extracted sample obtained by extracting a part of the sample substrate, and the like are arranged. . Here, the FIB irradiation optical system 35 is configured such that the angle of the FIB irradiation axis with respect to the sample substrate surface can be set from 75 degrees to 90 degrees. In this embodiment, the FIB irradiation optical system 35 and the vacuum vessel 41 are connected by a bellows 45, and the deformation of the bellows is utilized. 10A shows a state where the FIB irradiation axis is at an angle of 90 degrees with respect to the sample substrate surface, and FIG. 10B shows a state where the angle is 75 degrees. Further, as a device for controlling this device, a stage control device 61, a manipulator control device 62, a secondary electron detector amplifier 63, a deposition gas source control device 64, an FIB control device 65, and a calculation mainly composed of an electric circuit and an arithmetic device A processing device 74 and the like are arranged.

  Next, a sample preparation method according to this example is shown in FIG. In other words, conventionally, the oblique groove 408 is formed by obliquely irradiating the sample surface with the FIB 1 while tilting the sample stage. Instead of tilting the sample stage, the ion beam irradiation system 35 is shown in FIG. As shown in FIG. 11 (c), the oblique groove 408 may be formed. Other processes are the same as those in the prior art.

According to the sample preparation apparatus of this means, a micro sample including a desired specific region is separated or prepared from a sample such as an electronic component such as a semiconductor wafer or a device without tilting the sample stage, and micro region analysis or A sample preparation apparatus that enables preparation of a sample for observation and measurement is realized by a focused ion beam tilting function that can change the incident direction of the focused ion beam by at least 15 degrees. In particular, in this embodiment, since a focused ion beam incident angle can be selected in sample preparation, various sample preparation methods and sample shapes can be realized.
<Embodiment 5>
A schematic configuration diagram of a sample preparation apparatus according to an embodiment of the present application will be described with reference to FIG.

  In the present embodiment, the focused ion beam tilting function capable of changing the incident direction of the focused ion beam by at least 15 degrees is realized by electrical deflection.

  The sample preparation device 17 has a vacuum container 41, and an FIB irradiation optical system 35, a secondary particle detector 36, a deposition gas source 37, a probe 3, a sample stage 39, a sample holder 40, and the like are arranged in the vacuum container. This is the same as in the third embodiment. Here, an angle changing electrode 51 is further provided between the objective lens 44 and the sample stage 39. The FIB irradiation axis can be set by changing the angle of the FIB irradiation axis with respect to the sample substrate surface from 75 degrees to 90 degrees by the ion beam deflection action of the electrode. Further, as a device for controlling this device, a stage control device 61, a manipulator control device 62, a secondary electron detector amplifier 63, a deposition gas source control device 64, an FIB control device 65, and a calculation mainly composed of an electric circuit or an arithmetic device. A processing device 74 and the like are arranged.

  Next, a sample preparation method according to this example is shown in FIG. That is, conventionally, the oblique groove 408 is formed by tilting the sample stage and irradiating the sample surface with the FIB 1 obliquely. However, instead of tilting the sample stage, the ion beam irradiation axis is changed by the angle changing electrode 51. As shown in FIG. 11, the inclined grooves 408 may be formed as shown in FIG. Other processes are the same as those in the prior art.

  According to the sample preparation apparatus of this means, a micro sample including a desired specific region is separated or prepared from a sample such as an electronic component such as a semiconductor wafer or a device without tilting the sample stage, and micro region analysis or A sample preparation apparatus that enables preparation of a sample for observation and measurement is realized by an electrical deflection action by an angle changing electrode that can change the incident direction of the focused ion beam by at least 15 degrees. In particular, the mechanical device configuration is simplified, the manufacturing cost of the device can be reduced, and the focused ion beam incident angle can be selected in sample preparation, so that various sample preparation methods and sample shapes can be realized.

The figure for demonstrating one Embodiment of the sample preparation method by this invention. The figure for demonstrating the example using FIB and the conveyance means especially by the preparation methods of the conventional TEM sample. The figure for demonstrating the example of carrying out the thin film processing using the FIB especially in the sample substrate by the preparation method of the conventional TEM sample. The block diagram which shows one Embodiment of the sample preparation apparatus by this invention. The figure of the micro sample produced by the sample preparation method by this invention. The figure for demonstrating one Embodiment of the sample preparation method by this invention. The block diagram which shows one Embodiment of the sample preparation apparatus by this invention. FIG. 2 is a supplementary diagram for understanding FIG. 1. The figure for demonstrating the example using FIB and the conveyance means especially by the preparation methods of the conventional TEM sample. The block diagram which shows one Embodiment of the sample preparation apparatus by this invention. The block diagram which shows one Embodiment of the sample preparation apparatus by this invention. The figure for demonstrating the procedure of sample preparation of embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... FIB, 2 ... Sample, 3 ... Probe, 4 ... Depot source, 5 ... Depo gas, 6 ... Micro sample, 7 ... Square hole, 8 ... Bottom hole, 9 ... Notch groove, 10 ... Gas nozzle, 31 ... Ion beam Lens, 32 ... Liquid metal ion source, 33 ... Beam limiting aperture, 34 ... Ion beam scanning electrode, 35 ... FIB irradiation optical system, 38 ... Secondary particle detector, 37 ... Depot source, 38 ... Sample substrate, 39 ... Sample Stage, 40 ... Sample holder, 41 ... Vacuum container, 42 ... Manipulator, 44 ... Objective lens, 45 ... Bellows, 51 ... Angle changing deflection electrode, 61 ... Stage control device, 62 ... Manipulator control device, 63 ... Amplifier, 64 Deposition gas source control device, 65 FIB control device, 74 Calculation processing device, 76 Sample holder, 77 Holder cassette, 78 Transfer means, 80 Stage control device, 81 Field emission type electron gun, 82 ... electron beam lens, 83 ... electron beam scanning electrode, 84 ... electron beam, 91 ... electron gun control device, 92 ... electron beam optical system control device, 93 ... electron beam scanning control device, 101 ... Square hole, 102 ... Notch groove, 103 ... Notch groove, 104 ... Support part, 105 ... Deposition film, 207 ... Sample thin film, 208 ... Thin film, 209 ... TEM sample holder. 301 ... Square hole, 302 ... Thin film both ends, 303 ... Sample thin film, 304 ... Glass rod. 501 ... Square hole, 502 ... Square hole.

Claims (7)

A sample stage on which the sample is placed;
An ion beam irradiation optical system for irradiating the sample with an ion beam;
A probe for extracting a micro sample from the sample;
An angle changing electrode capable of changing an angle of the ion beam with respect to the sample surface between the ion beam irradiation optical system and the sample stage;
The ion beam irradiation optical system irradiates the first region and the second region of the sample surface with the ion beam,
When irradiating the second region with the ion beam, the micro sample is formed by tilting the angle of the ion beam with respect to the sample surface by the angle changing electrode without tilting the sample stage. A sample preparation device characterized by that. The sample preparation apparatus according to claim 1,
The sample preparation apparatus, wherein the angle changing electrode is an electrode capable of changing an angle of the ion beam with respect to the sample surface from 75 degrees to 90 degrees. The sample preparation apparatus according to claim 1,
The ion beam irradiation optical system performs the ion beam irradiation to the first region so that the angle of the ion beam with respect to the sample surface is 90 degrees without tilting the sample stage. A sample preparation apparatus. A sample stage on which the sample is placed;
An ion beam irradiation optical system for irradiating the sample with an ion beam;
A probe for extracting a minute sample from the sample;
An angle changing electrode capable of changing an angle of the ion beam with respect to the sample surface between the ion beam irradiation optical system and the sample stage;
A stage control device for moving the sample stage,
The ion beam irradiation optical system irradiates the first region and the second region on the surface of the sample with the ion beam, thereby forming a first groove and a second groove in the sample,
The stage controller moves the sample stage to form the second groove on the sample surface after forming the first groove on the sample surface,
The second groove is formed by tilting the ion beam by the angle changing electrode without tilting the sample stage,
The sample preparation apparatus characterized in that the micro sample separated from the sample by the first groove and the second groove can be extracted from the sample by the probe. In the sample preparation device according to claim 4,
The sample preparation apparatus, wherein the angle changing electrode is an electrode capable of changing an angle of the ion beam with respect to the sample surface from 75 degrees to 90 degrees. In the sample preparation device according to claim 4,
The ion beam irradiation optical system performs the ion beam irradiation to the first region so that the angle of the ion beam with respect to the sample surface is 90 degrees without tilting the sample stage. A sample preparation apparatus. A sample stage on which the sample is placed;
An ion beam irradiation optical system for irradiating the sample with an ion beam;
A probe for extracting a micro sample from the sample;
An angle changing electrode capable of changing an angle of the ion beam with respect to the sample surface between the ion beam irradiation optical system and the sample stage.

Images