JP2008292428A - Semiconductor sensor - Google Patents

Semiconductor sensor Download PDF

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JP2008292428A
JP2008292428A JP2007141066A JP2007141066A JP2008292428A JP 2008292428 A JP2008292428 A JP 2008292428A JP 2007141066 A JP2007141066 A JP 2007141066A JP 2007141066 A JP2007141066 A JP 2007141066A JP 2008292428 A JP2008292428 A JP 2008292428A
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potential
movable electrode
electrode
semiconductor
semiconductor layer
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Daisuke Wakabayashi
大介 若林
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Panasonic Electric Works Co Ltd
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Panasonic Electric Works Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor sensor capable of preventing sticking caused by an electrostatic force. <P>SOLUTION: A semiconductor layer 2 is provided with a movable electrode 5 operated in response to a displacement of a physical quantity, and a fixed electrode 6 arranged opposedly to the movable electrode 5 via a clearance therebetween, and a stopper part 7 provided separately from the fixed electrode 6 and for limiting an operation of the movable electrode 5, and a potential of the stopper part 7 serves as an open potential. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、半導体層によって物理量を検出し、半導体層の表裏面のうち少なくとも一方に絶縁層が接合されてなる半導体センサに関する。   The present invention relates to a semiconductor sensor in which a physical quantity is detected by a semiconductor layer, and an insulating layer is bonded to at least one of the front and back surfaces of the semiconductor layer.

公知の半導体プロセスを用いて半導体基板を加工することで形成した可動体の変位に応じて、例えば、加速度や角速度等の種々の物理量を検出できるようにした半導体センサなどが一般に知られている。このような半導体センサは、可動体の変位を制限するためのストッパ部を備えている（例えば、特許文献１）。
特開２００６−１７７７６８号公報 2. Description of the Related Art In general, a semiconductor sensor or the like that can detect various physical quantities such as acceleration and angular velocity according to the displacement of a movable body formed by processing a semiconductor substrate using a known semiconductor process is generally known. Such a semiconductor sensor includes a stopper portion for limiting the displacement of the movable body (for example, Patent Document 1).
JP 2006-177768 A

しかしながら、特許文献１に開示されている構成によれば、ストッパ部、可動体の電位が考慮されていないため、可動体がストッパ部と接触した場合に静電力によるスティッキングが生じてしまい、可動体とストッパ部とが離れなくなってしまうといった問題がある。   However, according to the configuration disclosed in Patent Document 1, since the potential of the stopper portion and the movable body is not considered, sticking due to electrostatic force occurs when the movable body comes into contact with the stopper portion, and the movable body There is a problem that the stopper part is not separated.

そこで、本発明は、上述した実情に鑑みて提案されたものであり、静電力によるスティッキングを防止することができる半導体センサを提供することを目的とする。   Therefore, the present invention has been proposed in view of the above-described circumstances, and an object thereof is to provide a semiconductor sensor that can prevent sticking due to electrostatic force.

本発明の半導体センサは、半導体層によって物理量を検出し、前記半導体層の表裏面のうち少なくとも一方に絶縁層が接合されてなる半導体センサにおいて、前記半導体層が、前記物理量の変位に応じて動作する可動電極と、前記可動電極と間隙を介して対向配置された固定電極と、前記固定電極と別体とされた前記可動電極の動作を制限するストッパ部とを備え、前記ストッパ部の電位をオープン電位とすることを特徴とする。   The semiconductor sensor of the present invention is a semiconductor sensor in which a physical quantity is detected by a semiconductor layer, and an insulating layer is bonded to at least one of the front and back surfaces of the semiconductor layer. The semiconductor layer operates in accordance with the displacement of the physical quantity. A movable electrode, a fixed electrode disposed opposite to the movable electrode via a gap, and a stopper portion that restricts the operation of the movable electrode separated from the fixed electrode, the potential of the stopper portion being It is characterized by an open potential.

また、本発明の半導体センサは、前記ストッパ部の電位を前記可動電極の電位と同電位とすることを特徴とする。   The semiconductor sensor according to the present invention is characterized in that the potential of the stopper is the same as the potential of the movable electrode.

また、本発明の半導体センサは、前記絶縁層に貫通孔を設けて、前記半導体層のストッパ部の表面の一部、並びに前記半導体層の可動電極または可動電極と同電位となる部位の表面の一部を露出させ、前記貫通孔の内周面、及び絶縁層の表面にかけて電気的に接続される導体層を形成し、前記導体層を配線により電気的に接続することで、前記ストッパ部の電位を前記可動電極の電位と同電位とすることを特徴とする。   In the semiconductor sensor of the present invention, a through hole is provided in the insulating layer, and a part of the surface of the stopper portion of the semiconductor layer and a surface of the movable electrode of the semiconductor layer or the surface of the portion having the same potential as the movable electrode A portion of the stopper is exposed by forming a conductor layer electrically connected to the inner peripheral surface of the through hole and the surface of the insulating layer, and electrically connecting the conductor layer by wiring. The potential is the same as the potential of the movable electrode.

また、本発明の半導体センサは、前記半導体層のストッパ部の表面、並びに前記半導体層の可動電極または可動電極と同電位となる部位の表面に金属電極を形成し、前記絶縁層の半導体層と対向する面に施した配線により前記金属電極間を電気的に接続することで、前記ストッパ部の電位を前記可動電極の電位と同電位とすることを特徴とする。   In the semiconductor sensor of the present invention, a metal electrode is formed on the surface of the stopper portion of the semiconductor layer and the surface of the movable electrode of the semiconductor layer or a portion having the same potential as the movable electrode, and the semiconductor layer of the insulating layer The metal electrodes are electrically connected by wirings provided on the opposing surfaces, so that the potential of the stopper portion is the same as the potential of the movable electrode.

また、本発明の半導体センサは、前記半導体層のストッパ部と、前記半導体層の可動電極または可動電極と同電位となる部位とをワイヤボンディングにより電気的に接続することで、前記ストッパ部の電位を前記可動電極の電位と同電位とすることを特徴とする。   In the semiconductor sensor of the present invention, the stopper portion of the semiconductor layer and the movable electrode of the semiconductor layer or a portion having the same potential as the movable electrode are electrically connected by wire bonding, so that the potential of the stopper portion is Is the same potential as the potential of the movable electrode.

また、本発明の半導体センサは、当該半導体センサを半導体パッケージ内に組み込んだ場合に、前記半導体層のストッパ部と、前記半導体層の可動電極または可動電極と同電位となる部位と、前記半導体パッケージに形成された電極とをワイヤボンディングにより電気的に接続することで、前記ストパ部の電位を前記可動電極の電位と同電位とすることを特徴とする。   The semiconductor sensor according to the present invention includes a stopper portion of the semiconductor layer, a movable electrode of the semiconductor layer or a portion having the same potential as the movable electrode, and the semiconductor package when the semiconductor sensor is incorporated in a semiconductor package. The potential of the stoper portion is set to the same potential as the potential of the movable electrode by electrically connecting the electrodes formed on the substrate by wire bonding.

本発明によれば、可動電極とストッパ部との静電力によるスティッキングを防止することが可能となる。   According to the present invention, it is possible to prevent sticking due to electrostatic force between the movable electrode and the stopper portion.

また、本発明によれば、可動電極とストッパ部とを同電位とすることで、可動電極がストッパ部に接触したとしても静電力が働かないためスティッキングを回避することを可能とする。   Further, according to the present invention, by setting the movable electrode and the stopper portion to the same potential, even if the movable electrode comes into contact with the stopper portion, the electrostatic force does not work, so that sticking can be avoided.

また、本発明によれば、半導体センサの半導体層を絶縁層により気密封止して可動電極、固定電極の電位を取り出す工程と同一工程にてストッパ部の電位を可動電極の電位と同電位にすることができるため、製造工程を大幅に短縮することを可能とする。   Further, according to the present invention, the potential of the stopper portion is made equal to the potential of the movable electrode in the same step as the step of taking out the potential of the movable electrode and the fixed electrode by hermetically sealing the semiconductor layer of the semiconductor sensor with the insulating layer. Therefore, the manufacturing process can be greatly shortened.

また、本発明によれば、実装工程であるワイヤボンディングの工程を利用して、ストッパ部の電位を可動電極の電位と同電位にすることができるため、製造工程を大幅に短縮することを可能とする。   Further, according to the present invention, since the potential of the stopper portion can be made equal to the potential of the movable electrode by using the wire bonding process which is a mounting process, the manufacturing process can be greatly shortened. And

以下、本発明の実施の形態について図面を参照して説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

［静電容量式センサの構成］
図１、図２を用いて、本発明の実施の形態として示す半導体センサである静電容量式センサ１の構成について説明する。実施の形態として示す静電容量式センサ１は、互いに垂直な２軸方向の加速度を検出することができる。 [Configuration of capacitive sensor]
A configuration of a capacitive sensor 1 which is a semiconductor sensor shown as an embodiment of the present invention will be described with reference to FIGS. The capacitive sensor 1 shown as an embodiment can detect accelerations in two axial directions perpendicular to each other.

図１は、静電容量式センサの半導体層２を示した平面図である。図１に示すように、半導体層２は、半導体基板に公知の半導体プロセスにより間隙１０を形成することで、フレーム部３、ビーム部４、可動電極５、固定電極６、ストッパ部７が形成されている。   FIG. 1 is a plan view showing a semiconductor layer 2 of a capacitive sensor. As shown in FIG. 1, the semiconductor layer 2 is formed with a frame portion 3, a beam portion 4, a movable electrode 5, a fixed electrode 6, and a stopper portion 7 by forming a gap 10 in a semiconductor substrate by a known semiconductor process. ing.

図２は、図１のＩ−Ｉ線で半導体層２を切断するように静電容量式センサ１を切断した様子を示した断面図である。図２に示すように、静電容量式センサ１は、この半導体層２の表裏両面にガラス基板などの絶縁層２０，２１を、例えば、陽極接合などをして接合することで形成される。これら半導体層２と絶縁層２０，２１との接合面には、比較的浅い凹部２２が形成されており、半導体層２各部の絶縁性や可動電極５の動作性の確保が図られている。図１に示すように、半導体層２が略正方形状となるように静電容量式センサ１は、切り出されることになる。   FIG. 2 is a cross-sectional view showing a state in which the capacitive sensor 1 is cut so that the semiconductor layer 2 is cut along the line II in FIG. As shown in FIG. 2, the capacitive sensor 1 is formed by bonding insulating layers 20 and 21 such as a glass substrate to the front and back surfaces of the semiconductor layer 2 by, for example, anodic bonding. A relatively shallow recess 22 is formed on the bonding surface between the semiconductor layer 2 and the insulating layers 20 and 21, so that insulation of each part of the semiconductor layer 2 and operability of the movable electrode 5 are ensured. As shown in FIG. 1, the capacitive sensor 1 is cut out so that the semiconductor layer 2 has a substantially square shape.

フレーム部３は、間隙１０を介してビーム部４外側に枠状に形成されている。フレーム部３には、内側の隅から、それぞれ当該フレーム部３の各辺と平行に、かつ中途で直角に折れ曲がりながら中心に向けて渦巻き状に伸びるビーム部４が設けられている。図１に示すようにビーム部４は、間隙１０を介して略枠状となるフレーム部３の二辺分に亘って、それぞれ相互干渉することなく延設されるとともに、内側端部では可動電極５の隅部に接続されており、フレーム部３に対して可動電極５を弾性的に可動支持するバネ要素（渦巻きバネ）として機能する。   The frame portion 3 is formed in a frame shape outside the beam portion 4 with a gap 10 interposed therebetween. The frame portion 3 is provided with a beam portion 4 extending in a spiral shape toward the center while being bent at a right angle in the middle from the inner corner in parallel with each side of the frame portion 3. As shown in FIG. 1, the beam portion 4 extends over two sides of the frame portion 3 having a substantially frame shape through a gap 10 without interfering with each other. 5, and functions as a spring element (spiral spring) that elastically moves and supports the movable electrode 5 with respect to the frame portion 3.

これにより、静電容量式センサ１では、可動電極５に対し、バネ要素としてのビーム部４、ビーム部４に接続されたフレーム部３により支持される質量要素（マス）としての機能を与え、これらバネ要素と質量要素とによってバネ−マス系を構成している。このような静電容量式センサ１は、質量要素としての可動電極５の位置変位による可動電極５、固定電極６間の静電容量の変化を検出する。そして、静電容量式センサ１は、検出された静電容量の変化をＣ−Ｖ変換することで得られる電圧波形から当該静電容量式センサ１に加えられた加速度を検出することができる。   Thereby, in the capacitive sensor 1, the function as a mass element (mass) supported by the beam part 4 as a spring element and the frame part 3 connected to the beam part 4 is given to the movable electrode 5. These spring elements and mass elements constitute a spring-mass system. Such a capacitance type sensor 1 detects a change in capacitance between the movable electrode 5 and the fixed electrode 6 due to a positional displacement of the movable electrode 5 as a mass element. And the capacitive sensor 1 can detect the acceleration added to the said capacitive sensor 1 from the voltage waveform obtained by carrying out CV conversion of the change of the detected electrostatic capacitance.

具体的には、この静電容量の変化は、可動電極５、固定電極６にそれぞれ形成された櫛歯状の複数の検出可動電極５ａ、検出固定電極６ａからなる検出部８Ａ乃至８Ｄ（以下、総称する場合は、単に検出部８と呼ぶ。）によって検出される。   Specifically, this change in capacitance is caused by detection units 8A to 8D (hereinafter referred to as “detection units 8A” to “8D”) including a plurality of comb-like detection movable electrodes 5a and detection fixed electrodes 6a formed on the movable electrode 5 and the fixed electrode 6, respectively. When they are collectively referred to, they are simply detected by the detection unit 8).

図１に示すＸ軸方向に加速度が与えられると、可動電極５がＸ軸方向に変位し、検出部８Ａの検出可動電極５ａ、検出固定電極６ａで検出される静電容量と、検出部８Ｂの検出可動電極５ａ、検出固定電極６ａで検出される静電容量に差が生じる。この静電容量の差からＸ軸方向の加速度を検出することができる。   When acceleration is applied in the X-axis direction shown in FIG. 1, the movable electrode 5 is displaced in the X-axis direction, the capacitance detected by the detection movable electrode 5a and the detection fixed electrode 6a of the detection unit 8A, and the detection unit 8B. There is a difference in the capacitance detected by the detection movable electrode 5a and the detection fixed electrode 6a. The acceleration in the X-axis direction can be detected from the difference in capacitance.

一方、図１に示すＹ軸方向に加速度が与えられると、可動電極５がＹ軸方向に変位し、検出部８Ｃの検出可動電極５ａ、検出固定電極６ａで検出される静電容量と、検出部８Ｄの検出可動電極５ａ、検出固定電極６ａで検出される静電容量に差が生じる。この静電容量の差からＹ軸方向の加速度を検出することができる。   On the other hand, when acceleration is applied in the Y-axis direction shown in FIG. 1, the movable electrode 5 is displaced in the Y-axis direction, the capacitance detected by the detection movable electrode 5a and the detection fixed electrode 6a of the detection unit 8C, and the detection Difference occurs in the capacitance detected by the detection movable electrode 5a and the detection fixed electrode 6a of the portion 8D. The acceleration in the Y-axis direction can be detected from the difference in capacitance.

図１に示す固定電極６の隅部６ｂの位置Ａ乃至位置Ｄ上には、図２に示すような絶縁層２０をサンドブラスト加工等によって貫通させた貫通孔２４を介し、隅部６ｂの表面６ｃ、貫通孔２４の内周面２４ａ、絶縁層２０の表面２０ａに固定電極６の電位を取り出すための電極部２３が金属薄膜にて形成されている。なお、絶縁層２０の表面２０ａは、図示しない絶縁性の樹脂層によって被覆（モールド成形）される。   The surface 6c of the corner 6b is disposed on the positions A to D of the corner 6b of the fixed electrode 6 shown in FIG. 1 through a through hole 24 through which the insulating layer 20 as shown in FIG. The electrode portion 23 for taking out the potential of the fixed electrode 6 is formed of a metal thin film on the inner peripheral surface 24a of the through hole 24 and the surface 20a of the insulating layer 20. The surface 20a of the insulating layer 20 is covered (molded) with an insulating resin layer (not shown).

また、この貫通孔２４を絶縁層２１に設け、同じように電極部２３を形成して、半導体層２の裏面より固定電極６の電位を取り出すようにしてもよい。   Alternatively, the through hole 24 may be provided in the insulating layer 21 and the electrode portion 23 may be formed in the same manner so that the potential of the fixed electrode 6 is taken out from the back surface of the semiconductor layer 2.

一方、可動電極５の電位は、当該可動電極５をビーム部４を介して支持するフレーム部３から取り出すようにする。図１に示すフレーム部３の位置Ｅ、位置Ｆ上には、図示しないが、上述した固定電極６の隅部６ｂの位置Ａ乃至位置Ｄ上と同様に、絶縁層２０をサンドブラスト加工等によって貫通させた貫通孔を介し、可動電極５の電位を取り出すための電極部が金属薄膜にて形成されている。また、この貫通孔を絶縁層２１に設け、同じように電極部を形成して、半導体層２の裏面より可動電極５の電位を取り出すようにしてもよい。   On the other hand, the potential of the movable electrode 5 is taken out from the frame portion 3 that supports the movable electrode 5 via the beam portion 4. Although not shown on the positions E and F of the frame portion 3 shown in FIG. 1, the insulating layer 20 is penetrated by sandblasting or the like, similarly to the positions A to D of the corner portions 6b of the fixed electrode 6 described above. An electrode portion for taking out the potential of the movable electrode 5 is formed of a metal thin film through the through-hole. Alternatively, this through hole may be provided in the insulating layer 21, and the electrode portion may be formed in the same manner so that the potential of the movable electrode 5 is taken out from the back surface of the semiconductor layer 2.

図１に示すように、ストッパ部７は、可動電極５の動作により、可動電極５と固定電極６とが衝突して損傷することを防止するために設けられている。ストッパ部７は、可動電極５と対向する面に突起７ａを設けることで衝突による影響を最小限に抑制している。ストッパ部７は、固定電極６と別体とされ、可動電極５、固定電極６と電気的に絶縁されており、その電位がオープン電位となっている。   As shown in FIG. 1, the stopper portion 7 is provided to prevent the movable electrode 5 and the fixed electrode 6 from colliding and being damaged by the operation of the movable electrode 5. The stopper portion 7 is provided with a protrusion 7 a on the surface facing the movable electrode 5, thereby minimizing the influence of the collision. The stopper portion 7 is separated from the fixed electrode 6, and is electrically insulated from the movable electrode 5 and the fixed electrode 6, and the potential thereof is an open potential.

図３は、図１に示す半導体層２に絶縁層２０を接合して、II−II線で切断した様子を示した図である。図３（ａ）、（ｂ）、（ｃ）に示すように、ストッパ部７は、半導体層２の絶縁層２０が接合された面と対向する面２ａ上に、レジストマスク３０を載置してエッチング処理を施すことで、フレーム部３、ビーム部４、可動電極５、固定電極６などを形成するのと同一工程にて形成される。   FIG. 3 is a diagram showing a state in which the insulating layer 20 is bonded to the semiconductor layer 2 shown in FIG. 1 and cut along the line II-II. As shown in FIGS. 3A, 3B, and 3C, the stopper portion 7 has a resist mask 30 placed on the surface 2a facing the surface of the semiconductor layer 2 where the insulating layer 20 is bonded. By performing the etching process, the frame portion 3, the beam portion 4, the movable electrode 5, the fixed electrode 6 and the like are formed in the same process.

このようにして、形成されたストッパ部７は、固定電極６とは別体とされ、電位がオープン電位となっていることから、可動電極５の動作により当該ストッパ部７へと接触したとしても、静電力が働くことがないためスティッキングを良好に防止することができる。   Since the stopper portion 7 formed in this way is separated from the fixed electrode 6 and the potential is an open potential, even if the stopper portion 7 contacts the stopper portion 7 by the operation of the movable electrode 5. Since the electrostatic force does not work, sticking can be prevented well.

［検出部８の構成］
続いて、図４に示す静電容量式センサ１の検出部８を中心に可動電極５、固定電極６を拡大した平面図を用いて、検出部８の詳細な構成について説明をする。なお、検出部８Ｃ、８Ｄは、検出部８Ａ、８Ｂに対して鏡像となっているだけで、機能は全く同じであるため説明を省略する。 [Configuration of Detection Unit 8]
Next, a detailed configuration of the detection unit 8 will be described using a plan view in which the movable electrode 5 and the fixed electrode 6 are enlarged with the detection unit 8 of the capacitance type sensor 1 shown in FIG. 4 as the center. Note that the detection units 8C and 8D are only mirror images of the detection units 8A and 8B, and the functions are exactly the same.

図４に示すように、可動電極５には、その中央部５ｂからフレーム部３の一辺の端部に向けてその辺と略垂直に細長く伸びる帯状の検出可動電極５ａが形成されている。検出可動電極５ａは、所定のピッチで、互いに平行となるように櫛歯状に複数形成される。また、各検出可動電極５ａは、先端部が互いに平行となるように揃えられているが、長さが櫛歯の中央となるほど長く、櫛歯の中央から離れるほど短くなっている。   As shown in FIG. 4, the movable electrode 5 is formed with a strip-shaped detection movable electrode 5a extending from the central portion 5b toward the end of one side of the frame portion 3 so as to be elongated substantially perpendicular to the side. A plurality of detection movable electrodes 5a are formed in a comb shape so as to be parallel to each other at a predetermined pitch. Each detection movable electrode 5a is aligned so that the tip portions are parallel to each other, but the length becomes longer as it becomes the center of the comb teeth, and becomes shorter as it becomes farther from the center of the comb teeth.

一方、固定電極６には、可動電極５の中央部５ｂに向けて、検出可動電極５ａと平行に細長く伸びる帯状の検出固定電極６ａが形成されている。検出固定電極６ａは、上述した櫛歯状の複数の検出可動電極５ａの間に、検出可動電極５ａと１対１で平行に対向するように、所定のピッチ（例えば、検出可動電極５ａと同一のピッチ）で櫛歯状に複数形成される。また、各検出固定電極６ａは、検出可動電極５ａに対応させて、櫛歯の中央となるほど長く、櫛歯の中央から離れるほど短くなっており、検出可動電極５ａ、検出固定電極６ａ同士が相互に対向する対向面の対向面積をできるだけ広く確保できるようにしてある。   On the other hand, the fixed electrode 6 is formed with a band-shaped detection fixed electrode 6a extending in a slender shape in parallel with the detection movable electrode 5a toward the central portion 5b of the movable electrode 5. The detection fixed electrode 6a has a predetermined pitch (for example, the same as the detection movable electrode 5a) so as to face the detection movable electrode 5a in a one-to-one parallel relationship between the plurality of comb-shaped detection movable electrodes 5a. Are formed in a comb-teeth shape. In addition, each detection fixed electrode 6a is corresponding to the detection movable electrode 5a and is longer as it becomes the center of the comb teeth, and is shorter as it moves away from the center of the comb teeth. The facing area of the facing surface facing the surface can be secured as wide as possible.

図４に示すように、検出可動電極５ａ、検出固定電極６ａを形成する上で設けられた間隙１０は、一方側で狭い間隙１０ａ、他方側で広い間隙１０ｂとなっている。検出部８は、狭い側の間隙１０ａを検知ギャップ（電極ギャップ）として検出可動電極５ａ、検出固定電極６ａ間の静電容量を検出する。   As shown in FIG. 4, the gap 10 provided for forming the detection movable electrode 5a and the detection fixed electrode 6a is a narrow gap 10a on one side and a wide gap 10b on the other side. The detection unit 8 detects the capacitance between the detection movable electrode 5a and the detection fixed electrode 6a using the narrow gap 10a as a detection gap (electrode gap).

［ストッパ部７の電位を可動電極５の電位と同電位とする手法］
上述したように、ストッパ部７は、固定電極６とは別体とされ、電位がオープン電位となっていたが、接触によりスティッキングの虞がある可動電極５の電位と積極的に同電位とすることで、スティッキングを回避することもできる。 [Method of making the potential of the stopper portion 7 the same as the potential of the movable electrode 5]
As described above, the stopper portion 7 is separated from the fixed electrode 6 and the potential is an open potential. However, the stopper portion 7 is positively set to the same potential as the potential of the movable electrode 5 that may be stuck by contact. Thus, sticking can be avoided.

例えば、図５に示すように、可動電極５とストッパ部７とを配線３１により電気的に接続することで同電位とすれば、可動電極５がストッパ部７に接触したとしても静電力が働かないためスティッキングを回避することができる。   For example, as shown in FIG. 5, if the movable electrode 5 and the stopper portion 7 are electrically connected by the wiring 31 to have the same potential, even if the movable electrode 5 comes into contact with the stopper portion 7, the electrostatic force works. Therefore, sticking can be avoided.

以下に、上述したようにして、可動電極５とストッパ部７とを積極的に同電位とする構成について具体的に示す。   Hereinafter, a configuration in which the movable electrode 5 and the stopper portion 7 are actively set to the same potential as described above will be specifically described.

（絶縁層に貫通孔を設けて同電位とする手法）
可動電極５とストッパ部７とを同電位とするために、図１に示すストッパ部７の位置Ｇ乃至位置Ｊ上には、図６に示すように、絶縁層２０をサンドブラスト加工等によって貫通させた貫通孔２４を介し、ストッパ部７の表面７ｂ、貫通孔２４の内周面、絶縁層２０の表面２０ａにストッパ部７の電位を取り出すための導体層である電極部３２Ａ乃至３２Ｄが金属薄膜により形成されている。 (Method of providing a through hole in the insulating layer to achieve the same potential)
In order to make the movable electrode 5 and the stopper portion 7 have the same potential, as shown in FIG. 6, an insulating layer 20 is passed through the position G to the position J of the stopper portion 7 shown in FIG. The electrode portions 32A to 32D, which are conductor layers for extracting the potential of the stopper portion 7 to the surface 7b of the stopper portion 7, the inner peripheral surface of the through hole 24, and the surface 20a of the insulating layer 20 through the through-hole 24, are metal thin films. It is formed by.

また、可動電極５の電位は、上述したように、当該可動電極５をビーム部４を介して支持するフレーム部３から取り出すようにされている。図１に示すフレーム部３の位置Ｅ、位置Ｆ上には、絶縁層２０をサンドブラスト加工等によって貫通させた貫通孔２４を介し、フレーム部３の表面３ａ、貫通孔２４の内周面、絶縁層２０の表面２０ａに可動電極５の電位を取り出すための導体層である電極部３２Ｅ、３２Ｆが金属薄膜により形成されている。   Further, as described above, the potential of the movable electrode 5 is taken out from the frame portion 3 that supports the movable electrode 5 via the beam portion 4. On the position E and position F of the frame portion 3 shown in FIG. 1, the surface 3 a of the frame portion 3, the inner peripheral surface of the through hole 24, the insulation, through the through hole 24 through which the insulating layer 20 is penetrated by sandblasting or the like Electrode portions 32E and 32F which are conductor layers for extracting the potential of the movable electrode 5 are formed on the surface 20a of the layer 20 by a metal thin film.

このような、電極部３２Ａ乃至３２Ｆを、図７に示すように、絶縁層２０の表面２０ａ上に形成した配線３２により電気的に接続することで、ストッパ部７の電位を可動電極５の電位と同電位とすることができる。   As shown in FIG. 7, the electrode portions 32 </ b> A to 32 </ b> F are electrically connected by the wiring 32 formed on the surface 20 a of the insulating layer 20, whereby the potential of the stopper portion 7 is changed to the potential of the movable electrode 5. And the same potential.

このように、絶縁層２０に貫通孔２４を設けてストッパ部７の電位を取り出し、可動電極５の電位と同電位とする手法は、静電容量式センサ１の半導体層２を絶縁層２０により気密封止して可動電極５、固定電極６の電位を取り出す工程と同一工程にて実行することができるため、製造工程を大幅に短縮することができる。   As described above, the method of providing the through hole 24 in the insulating layer 20 to extract the potential of the stopper portion 7 and making it the same potential as the potential of the movable electrode 5 is that the semiconductor layer 2 of the capacitive sensor 1 is formed by the insulating layer 20. Since it can be performed in the same process as the process of taking out the potential of the movable electrode 5 and the fixed electrode 6 by hermetically sealing, the manufacturing process can be greatly shortened.

なお、可動電極５の電位は、フレーム部３から取り出すようにしているが、直接、可動電極５から取り出すようにしてもよい。   Although the potential of the movable electrode 5 is taken out from the frame portion 3, it may be taken out from the movable electrode 5 directly.

（半導体層上における電気的な接続により同電位とする手法）
まず、可動電極５とストッパ部７とを同電位とするために、図１に示すストッパ部７の表面７ｂ上の位置Ｇ乃至位置Ｊに、図８に示すように、金属電極３３Ａを形成する。そして、図８に示すように、可動電極５と同電位であるフレーム部３上の、各ストッパ部７の表面７ｂ上に形成した金属電極３３Ａの近傍に、金属電極３３Ｂを形成する。 (Method of setting the same potential by electrical connection on the semiconductor layer)
First, in order to make the movable electrode 5 and the stopper portion 7 have the same potential, as shown in FIG. 8, a metal electrode 33A is formed at positions G to J on the surface 7b of the stopper portion 7 shown in FIG. . Then, as shown in FIG. 8, a metal electrode 33 </ b> B is formed in the vicinity of the metal electrode 33 </ b> A formed on the surface 7 b of each stopper portion 7 on the frame portion 3 having the same potential as the movable electrode 5.

図９は、図８のIII−III線で切断した様子を示した断面図である。図９に示すように、絶縁層２０の裏面２０ｂには、金属配線３４が形成されており、絶縁層２０と半導体層２とを接合することで、図８に示すように、金属電極３３Ａと金属電極３３Ｂとが金属配線３４を介して電気的に接続され、ストッパ部７の電位を可動電極５の電位と同電位とすることができる。   9 is a cross-sectional view showing a state cut along line III-III in FIG. As shown in FIG. 9, metal wiring 34 is formed on the back surface 20 b of the insulating layer 20. By joining the insulating layer 20 and the semiconductor layer 2, as shown in FIG. The metal electrode 33 </ b> B is electrically connected via the metal wiring 34, and the potential of the stopper portion 7 can be made equal to the potential of the movable electrode 5.

このように、ストッパ部７の表面７ｂに形成した金属電極３３Ａと、フレーム部３上に形成した金属電極３３Ｂとを、絶縁層２０に形成した金属配線３４で電気的に接続することで、ストッパ部７と可動電極５とを同電位とする手法は、静電容量式センサ１の半導体層２を絶縁層２０により気密封止する工程と同一工程にて実行することができるため、製造工程を大幅に短縮することができる。
また、絶縁層２０を半導体層２に接合させない場合には、図１０に示すように、金属電極３３Ａと金属電極３３Ｂとをワイヤボンディングによりワイヤ３５を介して電気的に接続することで、ストッパ部７の電位を可動電極５の電位と同電位とすることができる。 In this way, the metal electrode 33A formed on the surface 7b of the stopper portion 7 and the metal electrode 33B formed on the frame portion 3 are electrically connected by the metal wiring 34 formed on the insulating layer 20, whereby the stopper Since the method of setting the part 7 and the movable electrode 5 to the same potential can be performed in the same process as the process of hermetically sealing the semiconductor layer 2 of the capacitive sensor 1 with the insulating layer 20, the manufacturing process is performed. It can be greatly shortened.
Further, when the insulating layer 20 is not bonded to the semiconductor layer 2, as shown in FIG. 10, the metal electrode 33A and the metal electrode 33B are electrically connected to each other via the wire 35 by wire bonding, so that the stopper portion The potential of 7 can be made the same as the potential of the movable electrode 5.

さらに、絶縁層２０を半導体層２に接合させない場合には、図１１に示すように、絶縁層２０のない静電容量式センサ１を、半導体パッケージ４０内に組み込んだ場合に、金属電極３３Ａと半導体パッケージ４０の同電位となっている電極４１とをワイヤボンディングによりワイヤ３６を介して電気的に接続し、フレーム部３上に形成された金属電極３３Ｃと半導体パッケージ４０の電極４１とをワイヤボンディングによりワイヤ３６を介して電気的に接続することで、ストッパ部７の電位を可動電極５の電位と同電位とすることができる。   Further, when the insulating layer 20 is not bonded to the semiconductor layer 2, as shown in FIG. 11, when the capacitance type sensor 1 without the insulating layer 20 is incorporated in the semiconductor package 40, the metal electrode 33A and The electrode 41 having the same potential of the semiconductor package 40 is electrically connected via wire 36 by wire bonding, and the metal electrode 33C formed on the frame portion 3 and the electrode 41 of the semiconductor package 40 are wire bonded. Thus, the potential of the stopper portion 7 can be made equal to the potential of the movable electrode 5 by being electrically connected via the wire 36.

このように、絶縁層２０を半導体層２に接合させない場合には、実装工程であるワイヤボンディングの工程を利用して、ストッパ部７の電位を可動電極５の電位と同電位にすることができるため、製造工程を大幅に短縮することができる。   As described above, when the insulating layer 20 is not bonded to the semiconductor layer 2, the potential of the stopper portion 7 can be set to the same potential as that of the movable electrode 5 by using a wire bonding process that is a mounting process. Therefore, the manufacturing process can be greatly shortened.

なお、上述の実施の形態は本発明の一例である。このため、本発明は、上述の実施形態に限定されることはなく、この実施の形態以外であっても、本発明に係る技術的思想を逸脱しない範囲であれば、設計等に応じて種々の変更が可能であることは勿論である。   The above-described embodiment is an example of the present invention. For this reason, the present invention is not limited to the above-described embodiment, and various modifications can be made depending on the design and the like as long as the technical idea according to the present invention is not deviated from this embodiment. Of course, it is possible to change.

本発明の実施の形態として示す静電容量式センサの半導体層の構成について示す図である。It is a figure shown about the structure of the semiconductor layer of the electrostatic capacitance type sensor shown as embodiment of this invention. 前記静電容量式センサを図１に示すＩ−Ｉ線で切断した様子について説明するための断面図である。It is sectional drawing for demonstrating a mode that the said capacitive type sensor was cut | disconnected by the II line | wire shown in FIG. 前記静電容量式センサのストッパ部の製造工程について説明するための図である。It is a figure for demonstrating the manufacturing process of the stopper part of the said electrostatic capacitance type sensor. 前記静電容量式センサの検出部の詳細な構成について説明するための図である。It is a figure for demonstrating the detailed structure of the detection part of the said electrostatic capacitance type sensor. 前記静電容量式センサにおいて、ストッパ部と可動電極とを同電位にすることについて説明するための図である。It is a figure for demonstrating making a stopper part and a movable electrode into the same electric potential in the said electrostatic capacitance type sensor. 前記静電容量式センサにおいて、絶縁層上に電極部を形成してストッパ部の電位を取り出す様子を示した図である。In the capacitance type sensor, it is a diagram showing a state where an electrode portion is formed on an insulating layer and a potential of a stopper portion is taken out. 前記静電容量式センサにおいて、絶縁層上の電極部を配線により電気的に接続した様子を示した図である。It is the figure which showed a mode that the electrode part on an insulating layer was electrically connected by wiring in the said capacitance-type sensor. 前記静電容量式センサにおいて、半導体層上に金属電極を形成して、ストッパ部と可動電極とを同電位とした様子について説明するための図である。FIG. 6 is a diagram for explaining a state in which a metal electrode is formed on a semiconductor layer and the stopper portion and the movable electrode are set to the same potential in the capacitance type sensor. 前記静電容量式センサを図８に示すIII−III線で切断した様子を示した図である。It is the figure which showed a mode that the said electrostatic capacitance type sensor was cut | disconnected by the III-III line | wire shown in FIG. 前記静電容量式センサにおいて、半導体層上に金属電極を形成して、ワイヤボンディングにより、ストッパ部と可動電極とを同電位とした様子について説明するための図である。FIG. 6 is a diagram for explaining a state in which a metal electrode is formed on a semiconductor layer and the stopper portion and the movable electrode are set to the same potential by wire bonding in the capacitance type sensor. 前記静電容量式センサを半導体パッケージ内に組み込んだ場合に、半導体層上に金属電極を形成して、ワイヤボンディングにより、ストッパ部と可動電極とを同電位とした様子について説明するための図である。FIG. 6 is a diagram for explaining a state in which a metal electrode is formed on a semiconductor layer and the stopper portion and the movable electrode are set to the same potential by wire bonding when the capacitive sensor is incorporated in a semiconductor package. is there.

符号の説明Explanation of symbols

３ フレーム部
５ 可動電極
６ 固定電極
７ ストッパ部
７ａ 突起
７ｂ 表面
２０ 絶縁層
２０ａ 表面
２０ｂ 裏面
２１ 絶縁層
２３ 電極部
２４ 貫通孔
２４ａ 内周面
３１ 配線
３２ 配線
３３ ワイヤ
３３Ａ 金属電極
３３Ｂ 金属電極
３３Ｃ 金属電極
３４ 金属配線
３５ ワイヤ
４０ 半導体パッケージ
４１ 電極 3 Frame part 5 Movable electrode 6 Fixed electrode 7 Stopper part 7a Protrusion 7b Surface 20 Insulating layer 20a Surface 20b Back surface 21 Insulating layer 23 Electrode part 24 Through hole 24a Inner peripheral surface 31 Wiring 32 Wiring 33 Wire 33A Metal electrode 33B Metal electrode 33C Metal Electrode 34 Metal wiring 35 Wire 40 Semiconductor package 41 Electrode

Claims (6)

半導体層によって物理量を検出し、前記半導体層の表裏面のうち少なくとも一方に絶縁層が接合されてなる半導体センサにおいて、
前記半導体層は、
前記物理量の変位に応じて動作する可動電極と、
前記可動電極と間隙を介して対向配置された固定電極と、
前記固定電極と別体とされた前記可動電極の動作を制限するストッパ部とを備え、
前記ストッパ部の電位をオープン電位とすること
を特徴とする半導体センサ。 In a semiconductor sensor in which a physical quantity is detected by a semiconductor layer and an insulating layer is bonded to at least one of the front and back surfaces of the semiconductor layer,
The semiconductor layer is
A movable electrode that operates in accordance with the displacement of the physical quantity;
A fixed electrode disposed opposite to the movable electrode via a gap;
A stopper portion for limiting the operation of the movable electrode separated from the fixed electrode;
A semiconductor sensor characterized in that the potential of the stopper is an open potential. 前記ストッパ部の電位を前記可動電極の電位と同電位とすること
を特徴とする請求項１記載の半導体センサ。 The semiconductor sensor according to claim 1, wherein the potential of the stopper is the same as the potential of the movable electrode. 前記絶縁層に貫通孔を設けて、前記半導体層のストッパ部の表面の一部、並びに前記半導体層の可動電極または可動電極と同電位となる部位の表面の一部を露出させ、
前記貫通孔の内周面、及び絶縁層の表面にかけて電気的に接続される導体層を形成し、前記導体層を配線により電気的に接続することで、前記ストッパ部の電位を前記可動電極の電位と同電位とすること
を特徴とする請求項２記載の半導体センサ。 Providing a through hole in the insulating layer to expose a part of the surface of the stopper portion of the semiconductor layer, and a part of the surface of the movable electrode of the semiconductor layer or a part of the surface having the same potential as the movable electrode,
A conductor layer that is electrically connected to the inner peripheral surface of the through hole and the surface of the insulating layer is formed, and the conductor layer is electrically connected by wiring, so that the potential of the stopper portion can be reduced. The semiconductor sensor according to claim 2, wherein the semiconductor sensor has the same potential as the potential. 前記半導体層のストッパ部の表面、並びに前記半導体層の可動電極または可動電極と同電位となる部位の表面に金属電極を形成し、前記絶縁層の半導体層と対向する面に施した配線により前記金属電極間を電気的に接続することで、前記ストッパ部の電位を前記可動電極の電位と同電位とすること
を特徴とする請求項２記載の半導体センサ。 A metal electrode is formed on the surface of the stopper portion of the semiconductor layer and the surface of the movable electrode of the semiconductor layer or a portion having the same potential as the movable electrode, and the wiring is applied to the surface of the insulating layer facing the semiconductor layer. The semiconductor sensor according to claim 2, wherein the metal electrode is electrically connected to make the potential of the stopper portion the same as the potential of the movable electrode. 前記半導体層のストッパ部と、前記半導体層の可動電極または可動電極と同電位となる部位とをワイヤボンディングにより電気的に接続することで、前記ストッパ部の電位を前記可動電極の電位と同電位とすること
を特徴とする請求項２記載の半導体センサ。 By electrically connecting the stopper portion of the semiconductor layer and the movable electrode of the semiconductor layer or a portion having the same potential as the movable electrode by wire bonding, the potential of the stopper portion is equal to the potential of the movable electrode. The semiconductor sensor according to claim 2, wherein: 当該半導体センサを半導体パッケージ内に組み込んだ場合に、前記半導体層のストッパ部と、前記半導体層の可動電極または可動電極と同電位となる部位と、前記半導体パッケージに形成された電極とをワイヤボンディングにより電気的に接続することで、前記ストパ部の電位を前記可動電極の電位と同電位とすること
を特徴とする請求項２記載の半導体センサ。 When the semiconductor sensor is incorporated in a semiconductor package, the stopper portion of the semiconductor layer, the movable electrode of the semiconductor layer or a portion having the same potential as the movable electrode, and the electrode formed in the semiconductor package are wire bonded. The semiconductor sensor according to claim 2, wherein the potential of the stoper portion is set to the same potential as the potential of the movable electrode by being electrically connected.
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