JP2008283146A - Cvd apparatus, semiconductor device, and photoelectric converter - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a CVD apparatus having improved productivity by suppressing deterioration in a catalyst body, and to provide a semiconductor device and a photoelectric converter manufactured by the CVD apparatus. <P>SOLUTION: A shower plate 24 divides a space S in a chamber body 21 into two to form a first chamber S1 forming a film and a second chamber S2 excluding the first chamber S1. A connection terminal holder 31 arranges respective connection terminals 32 in the second chamber S2 each, and guides both the ends of the catalyst body W up to the second chamber S2 each. A first regulation valve Vc1 regulates pressure in the first chamber S1 to first target pressure, and a second regulation valve Vc2 regulates the pressure in the second chamber S2, to a second target pressure lower than the first value. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a CVD device, a semiconductor device, and a photoelectric conversion device.

  In the manufacturing process of a semiconductor device or a photoelectric conversion device, a chemical vapor deposition (CVD) method in which a thin film is formed using a chemical reaction of a raw material is used. As the CVD method, for example, a plasma CVD method using a plasma space in a reaction system and a thermal CVD method using a heating reaction are known.

  In the plasma CVD method or the thermal CVD method, the substrate is exposed to the plasma or the substrate is heated to a high temperature, and therefore, the substrate and the thin film are easily damaged electrically and thermally. In addition, the plasma CVD method and the thermal CVD method require high uniformity in the plasma density and the substrate temperature, so that it is difficult to cope with an increase in the area of the substrate.

Therefore, in the CVD method, so-called catalytic CVD method, in which a source gas is brought into contact with a heated catalyst body such as tungsten to decompose the source gas into reactive species, has been attracting attention in the past. For example, Patent Document 1). In the catalytic CVD method, since the surface of the catalyst body is responsible for the progress of the chemical reaction, electrical and thermal damage to the substrate and the thin film can be suppressed compared to the plasma CVD method and the thermal CVD method. In addition, since the catalytic CVD method can increase the film formation region simply by increasing the number of catalyst bodies, it can relatively easily cope with the increase in the area of the substrate.
Patent No. 3780364

  A CVD apparatus used in the catalytic CVD method includes a catalyst body disposed in a processing container, a connection terminal that supplies power to the catalyst body, and a connection terminal holder that holds the connection terminal. In Patent Document 1, the connection terminal holder is installed in a processing container, and the connection region between the catalyst body and the connection terminal is covered with a covering member. Patent Document 1 suppresses deterioration (silicidation) of the catalyst body by not exposing the connection region to a space for film formation.

  However, when the covering member covers the connection region in a contact manner, the catalyst body heated to a high temperature has caused a difference in thermal expansion with the covering member, causing mechanical damage to the catalyst body and the covering member, Finally, the connection area is exposed in the processing container. In addition, when the covering member covers the connection portion region in a non-contact manner, purge gas must flow from the contact portion region toward the film formation space, and contaminants around the connection portion region and its surroundings are formed in the film formation space. Easily mixed.

  As a result, in Patent Document 1, there is a problem that the film quality of a thin film formed using the catalytic CVD method is deteriorated or the productivity of a semiconductor device or a photoelectric conversion device manufactured using the catalytic CVD method is lowered. .

  The present invention has been made in order to solve the above-described problem, and includes a CVD apparatus in which deterioration of a catalyst body is suppressed and productivity is improved, and a semiconductor device and a photoelectric conversion apparatus manufactured using the CVD apparatus The purpose is to provide.

The CVD apparatus according to claim 1 is provided in a processing container and a space in the processing container, and the space in the processing container includes a first chamber in which film formation is performed, and a second chamber excluding the first chamber. A partition wall partitioned into a chamber, a communication hole provided in the partition wall for communicating the first chamber and the second chamber, a first decompression means for decompressing the first chamber, and a source gas in the first chamber Supply stage, a stage for placing a substrate in the first chamber, a catalyst body extending from the second chamber to the first chamber through the communication hole, and the second chamber having a lower pressure than the first chamber A second pressure reducing means for reducing pressure, a connection terminal arranged in the second chamber for supplying predetermined power to the catalyst body, a connection terminal holder arranged in the second chamber for holding the connection terminal, The main point is that

  According to the CVD apparatus of the first aspect, the catalyst body in the first chamber decomposes or activates the source gas and performs the film forming process on the substrate. Further, the second chamber forms a space lower in pressure than the first chamber, and accommodates the connection terminal holder, that is, the connection portion between the catalyst body and the connection terminal. Therefore, the contact portion can reduce the frequency of contact with the source gas by the amount that the second chamber has a low pressure. In addition, since the gas around the connection portion does not flow into the first chamber, the first chamber can sufficiently maintain the cleanness of the film formation space. As a result, the deterioration of the catalyst body can be suppressed, and the productivity of the thin film can be improved.

  A CVD apparatus according to a second aspect is the CVD apparatus according to the first aspect, wherein the first chamber and the second chamber are controlled by driving and controlling the first decompression unit and the second decompression unit. The gist is that a control unit for forming a predetermined differential pressure is provided therebetween.

According to the CVD apparatus of the second aspect, since the control unit controls the pressure in the first chamber and the pressure in the second chamber, the deterioration of the catalyst body can be more reliably suppressed.
The CVD apparatus according to claim 3 is the CVD apparatus according to claim 1 or 2, wherein the partition is formed in a plate shape along a surface direction of the substrate, and is formed in a space in the processing container. The gist is to partition the second chamber facing the entire substrate.

  According to the CVD apparatus of the third aspect, in the second chamber, the connection terminal can be arranged at a position facing the entire substrate. Therefore, in the second chamber, the catalyst body can be arranged in a region facing the entire substrate, and the degree of freedom of the arrangement position of the catalyst body can be improved. As a result, the arrangement position of the catalyst body can be selected according to the size of the substrate and the film formation conditions, and the productivity of the thin film can be further improved.

  The CVD apparatus according to claim 4 is the CVD apparatus according to any one of claims 1 to 3, wherein the connection terminal holder is fitted in the communication hole and is in the region of the communication hole. The gist is that the first chamber and the second chamber are partitioned, and a guide hole for guiding the catalyst body from the second chamber to the first chamber is provided in a region of the communication hole.

  According to the CVD apparatus of the fourth aspect, the guide hole of the connection terminal holder guides the catalyst body in the second chamber to the first chamber. Therefore, the connection terminal holder can be interposed between the partition wall and the catalyst body, and the thermal influence due to heat generation of the catalyst body can be reduced with respect to the partition wall. As a result, the material and shape of the partition can be selected according to the size of the substrate and the film formation target, and the application range of the CVD apparatus can be further expanded.

  According to the CVD apparatus according to claim 5, in the CVD apparatus according to any one of claims 1 to 4, the supply unit disperses and discharges the source gas into the first chamber. The gist of the present invention is to have a shower plate and a gas line for introducing the source gas into the shower plate, and the partition is the shower plate.

According to the CVD apparatus of the fifth aspect, since the partition wall is constituted by the shower plate, the number of members of the CVD apparatus can be reduced as compared with a case where a separate partition wall is provided.
A CVD apparatus according to a sixth aspect is the CVD apparatus according to any one of the first to fifth aspects, wherein the connection terminal holder is made of quartz.

  According to the CVD apparatus of claim 6, since the connection terminal holder is made of quartz, the connection terminal holder can be given mechanical and chemical stability, and the cleanliness of the film formation space can be improved. It can be improved further.

A CVD apparatus according to a seventh aspect is the CVD apparatus according to any one of the first to sixth aspects, wherein the purity of the catalyst body is 99.99% or more.
A CVD apparatus according to an eighth aspect is the CVD apparatus according to any one of the first to seventh aspects, wherein the purity of the catalyst body is 99.999% or more.

According to the CVD apparatus of the 7th, 8th aspect, the metal contamination level in the vacuum chamber resulting from combustion of a catalyst body can be aimed at.
The semiconductor device according to claim 9 is a semiconductor device including a layer containing silicon, and the layer is formed using the CVD apparatus according to any one of claims 1 to 8. To do.

According to the semiconductor device of the ninth aspect, it is possible to improve the productivity of the layer containing silicon, and hence the productivity of the semiconductor device.
The photoelectric conversion device according to claim 10 is a photoelectric conversion device provided with a layer containing silicon, and the layer containing silicon is formed using the CVD device according to claim 1. The summary is as follows.

  According to the photoelectric conversion device of the tenth aspect, it is possible to improve the productivity of the layer containing silicon, and thus the productivity of the photoelectric conversion device.

  As described above, according to the present invention, it is possible to provide a CVD apparatus in which deterioration of the catalyst body is suppressed and productivity is improved, and a semiconductor device and a photoelectric conversion apparatus manufactured using the CVD apparatus.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, an embodiment of the invention will be described with reference to the drawings. First, the CVD apparatus 10 will be described. FIG. 1 is a plan view schematically showing the CVD apparatus 10.
(CVD apparatus 10)
In FIG. 1, a CVD apparatus 10 is a cluster type system, which is connected to a load lock chamber 11 (hereinafter simply referred to as an LL chamber 11), a transfer chamber 12 connected to the LL chamber 11, and a transfer chamber 12. A plurality of catalytic CVD chambers 13.

  The LL chamber 11 has an internal space that can be decompressed (hereinafter simply referred to as a storage chamber 11a), and allows a plurality of substrates B to be loaded and unloaded. When starting the film forming process for the substrate B, the LL chamber 11 depressurizes the storage chamber 11 a so that the substrate B can be transferred to the transfer chamber 12. Further, the LL chamber 11 enables the substrate B to be carried out of the CVD apparatus 10 by setting the storage chamber 11a to atmospheric pressure when the film formation process for the substrate B is completed. As the substrate B, various plate materials such as a disk-shaped silicon substrate and a rectangular plate-shaped glass substrate can be used.

The transfer chamber 12 has an internal space that can be depressurized (hereinafter simply referred to as a transfer chamber 12a), and forms a vacuum system that can communicate with the LL chamber 11 and the catalytic CVD chamber 13. When the transfer robot 12 is mounted in the transfer chamber 12a and the film forming process of the substrate B is started, the transfer chamber 12 carries the substrate B of the LL chamber 11 into the transfer chamber 12, and the substrate B of the transfer chamber 12 is catalyzed. Transfer to the CVD chamber 13. In addition, when the film forming process is completed, the transfer chamber 12 drives the transfer robot 14 to transfer the substrate B of the catalytic CVD chamber 13 to the transfer chamber 12 and transfer the substrate B of the transfer chamber 12 to the LL chamber 11. To do.

(Catalytic CVD chamber 13)
Next, the catalytic CVD chamber 13 will be described below. FIG. 2 is a side sectional view schematically showing the configuration of the catalytic CVD chamber 13.

  In FIG. 2, a catalytic CVD chamber 13 is a vacuum chamber for forming a thin film on a substrate B using a catalytic CVD method. The catalytic CVD chamber 13 has a box-shaped chamber body 21, and a space S is formed in the chamber body 21.

The chamber main body 21 has a gas line LS connected to the mass flow controller MFC, and when the mass flow controller MFC supplies the raw material gas at a predetermined flow rate, the raw material gas is transported along the gas line LS to have a predetermined flow rate. The raw material gas is introduced into the space S. The source gas can be appropriately selected according to the film type to be formed. For example, when forming a silicon film, silane (SiH ₄ ) and hydrogen (H ₂ ) can be used as source gases, and when forming a silicon nitride film, silane and ammonia (NH ₃ ) are used. it can. In the case of forming a silicon oxynitride film, silane and nitrous oxide (N ₂ O) can be used as a source gas.

  The chamber body 21 has a stage 22 below the space S, and when the substrate B is carried in, the substrate B is placed on the stage 22 and positioned in the space S. The inner side surface of the chamber main body 21 and the outer side surface of the stage 22 are each covered with an adhesion-preventing plate 23 made of ceramic or the like, and when the film forming process is performed, deposition of film forming species is suppressed.

  The chamber body 21 has a shower plate 24 as a partition above the stage 22. The shower plate 24 is formed in a plate shape extending in the surface direction of the substrate B (hereinafter simply referred to as the horizontal direction). The shower plate 24 partitions the space S into two spaces along the horizontal direction. The shower plate 24 is a plate that disperses and discharges a source gas, and a plate made of a metal having high corrosion resistance such as aluminum or stainless steel can be used. The shower plate 24 has a pair of upper and lower first plates 24a and a second plate 24b. When the mass flow controller MFC supplies the source gas, the shower plate 24 disperses the source gas introduced into the center of the second plate 24b through a flow path provided in the second plate 24b, The source gas is dispersed by the flow path between the plate 24b and the first plate 24a.

  Here, the space S partitioned by the shower plate 24 and in which the stage 22 is disposed is referred to as a first chamber S1. The space S that is partitioned by the shower plate 24 and does not have the stage 22 is referred to as a second chamber S2.

  The first chamber S1 is connected to the exhaust system 25 via the first port P1, and between the first port P1 and the exhaust system 25, the first sensor PS1, the first adjustment valve Vc1, and the first exhaust. And a valve Vd1. As the exhaust system 25, various pumps such as a dry pump or a turbo molecular pump can be used. When the exhaust system 25 starts the exhaust operation, the first chamber S1 is decompressed according to the driving amount of the first adjustment valve Vc1 and is maintained at a predetermined pressure.

The second chamber S2 is connected to the exhaust system 25 via the second port P2, and the second port P
2 and the exhaust system 25, the second sensor PS2, the second adjustment valve Vc2, and the second exhaust valve Vd2. When the exhaust system 25 starts the exhaust operation, the second chamber S2 is decompressed according to the driving amount of the second adjustment valve Vc2, and is maintained at a pressure lower than the pressure of the first chamber S1.

  In the present embodiment, the first adjustment valve Vc1, the first exhaust valve Vd1, and the exhaust system 25 constitute a first pressure reducing means. Further, the second adjustment valve Vc2, the second exhaust valve Vd2, and the exhaust system 25 constitute a second pressure reducing means. Further, in the present embodiment, the pressure in the first chamber S1 for executing the film forming process is set to “first target pressure”, and the pressure in the second chamber S2 for executing the film forming process is set to “first It is called “two target pressure”.

  The shower plate 24 has a plurality of communication holes H communicating between the first chamber S1 and the second chamber S2, and the catalyst unit 30 is fitted in each communication hole H. Each catalyst unit 30 includes a connection terminal holder 31 that fits in the communication hole H, a pair of connection terminals 32 that are held by the connection terminal holder 31 and arranged in the second chamber S2, and a pair of connection terminals 32. And a catalyst body W that is connected between the second chamber S2 and the first chamber S1.

  The pair of connection terminals 32 are each formed in a bar shape extending in the vertical direction and extend from the upper part of the chamber body 21, one of which is connected to the external power supply GE and the other is connected to the ground potential.

  The catalyst body W is a wire that is bent in a U-shape, and for example, a metal such as tungsten, tantalum, platinum, or palladium can be used, and the purity thereof is, for example, 99.99% or more, and more preferable. Is 99.999% or more. The catalyst body W exposes the vicinity of both ends connected to the connection terminals 32 to the low-pressure second chamber S2, and exposes an intermediate region sandwiched between the connection terminals to the first chamber S1.

  When the external power source GE outputs predetermined power, the catalyst body W generates heat at a temperature (for example, 1500 ° C. to 2000 ° C.) corresponding to the power. When the source gas is supplied to the first chamber S1, the catalyst body W in the first chamber S1 exhibits a catalytic action due to its heat generation, decomposes or excites the source gas, and forms a desired thin film on the surface of the substrate B. Form a film. On the other hand, the catalyst body W in the second chamber S2 is exposed to a low pressure space without exhibiting its catalytic action because the connection terminal 32 absorbs the amount of heat of the catalyst body W.

  At this time, since the atmosphere of the catalyst body W in the second chamber S2 is adjusted and maintained at the “second target pressure”, the frequency of collision with the raw material gas can be made sufficiently low, regardless of the temperature. Reaction with the source gas can be avoided, and deterioration thereof can be suppressed.

(Catalyst body unit 30)
Next, the catalyst unit 30 will be described in detail below. 3 is a view of the catalytic CVD chamber 13 as viewed from above, and is a cross-sectional view taken along line AA of FIG. FIG. 4 is a side sectional view showing the catalyst body unit 30.

  In FIG. 3, the communication holes H are equally arranged on a concentric circle centered on the center point of the substrate B, and are formed to extend along the tangential direction of the concentric circle. For example, each communication hole H is disposed at a point-symmetrical position with the center position of the substrate B being the center of rotation four times. As a result, the catalyst body units 30 can be arranged in each communication hole H substantially isotropically when viewed from the center of the substrate B.

Here, when viewed from the vertical direction, the longitudinal direction of each communication hole H (the tangential direction of the concentric circle) is referred to as the “wiring direction” of the corresponding communication hole.
In FIG. 4, the connection terminal holder 31 is formed in a rectangular parallelepiped shape from a highly heat-resistant ceramic material (for example, quartz). On the outer periphery of the lower part of the connection terminal holder 31, notches 31a are formed on both sides in the wiring direction. When the connection terminal holder 31 is fitted into the communication hole H, the notch 31a is separated from the inner wall of the communication hole H and forms an introduction port N between the connection terminal holder 31 and the first plate 24a. When the mass flow controller MFC supplies the source gas, the connection terminal holder 31 introduces the source gas dispersed by the shower plate 24 into the first chamber S1 from each inlet N as shown by the arrow in FIG. To do.

  In the lower part of the connection terminal holder 31, pin insertion holes 31b penetrating from the first chamber S1 to the second chamber S2 are formed on both sides in the wiring direction. Each pin insertion hole 31b is formed along the vertical direction, and the corresponding guide pin 33 is inserted therethrough.

  Each guide pin 33 is formed in a cylindrical shape by a ceramic material having high heat resistance (for example, quartz) and has a guide hole 33a extending in the vertical direction. When each guide pin 33 is inserted into the corresponding pin insertion hole 31 b, its head is supported and fixed to the connection terminal holder 31. Each guide pin 33 guides the catalyst body W extending in the wiring direction through the corresponding guide hole 33a from the first chamber S1 to the second chamber S2 along the vertical direction.

  A pair of recesses 31 c and a pair of terminal insertion holes 31 d are respectively formed on the upper side of the connection terminal holder 31 on both sides in the corresponding wiring direction. Each of the pair of terminal insertion holes 31d is a through-hole penetrating from the corresponding recess 31c to the upper end of the connection terminal holder 31, and is formed immediately above the corresponding pin insertion hole 31b, and the connection terminal 32 is inserted therethrough. .

  Each connection terminal 32 is formed in a rod shape having a flange 32a. When each connection terminal 32 is inserted into the corresponding terminal insertion hole 31d, the flange portion 32a is fixed to the upper end of the connection terminal holder 31, and the lower end of the connection terminal 32 is moved into the recess 31c by a predetermined length. Invade.

  A grip pin 34 and a tightening screw 35 are attached to the lower end of each connection terminal 32. The grip pin 34 is a pin made of a metal having high corrosion resistance, has a circular hole having an inner diameter substantially the same as the outer diameter of the catalyst body W, and is formed in a bottomed cylindrical shape having an open lower end. The grip pin 34 is formed so that its outer shape becomes thinner toward the lower end. The grip pin 34 electrically connects the catalyst body W in the hole and the connection terminal 32 when the upper end of the grip pin 34 is fitted to the lower end of the connection terminal 32. When the screw 35 is screwed to the lower end of the connection terminal 32, the inclined surface expanding upward corresponds to the lower end of the gripping pin 34, and the lower end of the gripping pin 34 is tightened by the inclined surface. W is fastened and fixed to the grip pin 34. The catalyst body W is exposed to the second chamber S2 in the vicinity of the lower end of the connection terminal 32 as much as the fastening screw 35 and the guide pin 33 are separated from each other.

  When the external power source GE outputs a predetermined power, the catalyst body W in the first chamber S1 receives the power via the corresponding connection terminal 32 and the grip pin 34, and generates heat at a predetermined temperature. A desired film forming process is executed in S1.

  At this time, the raw material gas in the first chamber S1 flows into the second chamber S2 via the gap between the guide hole 33a and the catalyst body W according to the differential pressure between the “first target pressure” and the “second target pressure”. To do. The portion of the catalyst body W in the second chamber S2 where the temperature is the lowest, that is, the catalyst body W at the lower end of the grip pin 34 is sufficiently separated from the guide hole 33a and the periphery thereof is released. . For this reason, the low-temperature catalyst body W can sufficiently reduce the collision frequency with the inflowing raw material gas.

Furthermore, before the raw material gas in the first chamber S1 flows between the guide hole 33a and the catalyst body W, it collides in advance with the high temperature catalyst body W, and the reaction proceeds sufficiently. Therefore, most of the raw material gas entering between the guide hole 33a and the catalyst body W flows into the second chamber S2 in an inactive state with respect to the low-temperature catalyst body W.

  As a result, the catalyst body W can avoid the reaction with the raw material gas regardless of the temperature, and can suppress the deterioration thereof. Further, since the gas in the second chamber S2 does not flow into the first chamber S1, the cleanliness of the first chamber S1 can be maintained sufficiently high, and the film forming process can be performed with high reproducibility. Can do.

In the present embodiment, the mass flow controller MFC, the gas line LS, the shower plate 24, and the catalyst body unit 30 constitute a supply unit.
FIGS. 5A, 5 </ b> B, and 5 </ b> C are diagrams illustrating attachment methods for attaching the catalyst body W to the catalyst body unit 30.

  5A, the connection terminal holder 31 first inserts the guide pin 33 into the pin insertion hole 31b, and arranges the grip pin 34 and the tightening screw 35 on the head of the guide pin 33. In FIG. 5B, the connection terminal holder 31 inserts the connection terminal 32 into the terminal insertion hole 31 d and fits the upper end of the grip pin 34 to the lower end of the connection terminal 32. In FIG. 5C, the connection terminal holder 31 guides the end of the catalyst body W to the upper end of the grip pin 34 through the guide hole 33a, and screws the fastening screw 35 to the connection terminal 32 with a predetermined torque. Match.

  At this time, the lower end of the connection terminal 32 is drawn into the recess 31 c by screwing the tightening screw 35, and the flange 32 a abuts on the upper end of the connection terminal holder 31 and is fixed with screws. The catalyst body W is fastened and fixed to the grip pin 34 by screwing of the fastening screw 35, and a part of the catalyst body W is exposed to the second chamber S2 as much as the fastening screw 35 and the guide pin 33 are separated.

The tightening torque of the tightening screw 35 is set to a value that sufficiently separates the tightening screw 35 and the guide pin 33, that is, a value that sufficiently opens the periphery of the catalyst body W.
Next, the electrical configuration of the CVD apparatus 10 will be described. FIG. 6 is an electric block circuit diagram showing an electrical configuration of the CVD apparatus 10.

  In FIG. 6, the control unit 40 of the CVD apparatus 10 causes the CVD apparatus 10 to execute various processes (for example, a transfer process of the substrate B and a film formation process of the substrate B). The control unit 40 includes a calculation unit 41 made up of a CPU or the like, and executes various calculation processes. The control unit 40 includes a storage unit 42 including a RAM, a ROM, a hard disk, and the like, and stores data related to “first target pressure”, “second target pressure”, and the like, and various control programs.

  An input / output unit 43 is connected to the control unit 40. The input / output unit 43 includes various operation switches such as a start switch and a stop switch, and various display devices such as a liquid crystal display. The input / output unit 43 inputs data used for various processes to the control unit 40 and outputs data related to the processing status of the CVD apparatus 10. The input / output unit 43 inputs, for example, data relating to the flow rate of the raw material gas, the power to be supplied to the catalyst body W, “first target pressure”, and “second target pressure” to the control unit 40. The control unit 40 receives data input from the input / output unit 43 and causes the film formation process to be executed under film formation conditions corresponding to the data from the input / output unit 43.

  An exhaust system drive circuit 44 is connected to the control unit 40. The control unit 40 outputs a drive control signal corresponding to the exhaust system drive circuit 44 to the exhaust system drive circuit 44. The exhaust system drive circuit 44 drives the exhaust system 25 in response to the drive control signal from the control unit 40, and executes the exhaust operation of the first chamber S1 or the second chamber S2.

  A power supply driving circuit 45 for driving and controlling the external power supply GE is connected to the control unit 40. The control unit 40 outputs a drive control signal corresponding to the power supply drive circuit 45 to the power supply drive circuit 45. The power supply drive circuit 45 drives the external power supply GE in response to the drive control signal from the control unit 40 and supplies each catalyst body W with predetermined power.

  A first sensor PS1 and a second sensor PS2 are connected to the control unit 40. The control unit 40 outputs drive power for driving the first sensor PS1 and the second sensor PS2 to the first sensor PS1 and the second sensor PS2. The first sensor PS1 and the second sensor PS2 input the detection results of the pressure in the first chamber S1 and the pressure in the second chamber S2 to the control unit 40, respectively.

  A first valve drive circuit 46 for driving and controlling the first adjustment valve Vc1 is connected to the control unit 40. The control unit 40 outputs a drive control signal corresponding to the first valve drive circuit 46 to the first valve drive circuit 46. The first valve drive circuit 46 drives the first adjustment valve Vc1 in response to the drive control signal from the control unit 40, and adjusts and maintains the pressure in the first chamber S1 to the “first target pressure”.

  A second valve drive circuit 47 for driving and controlling the second adjustment valve Vc2 is connected to the control unit 40. The control unit 40 outputs a drive control signal corresponding to the second valve drive circuit 47 to the second valve drive circuit 47. The second valve drive circuit 47 drives the second adjustment valve Vc2 in response to the drive control signal from the control unit 40, and adjusts and maintains the pressure in the second chamber S2 to the “second target pressure”.

  When an operation signal for executing the film forming process is input from the input / output unit 43, the control unit 40 reads the film forming process program in the storage unit 42 and causes the film forming process to be executed according to the film forming process program. That is, the control unit 40 drives the exhaust system 25 via the exhaust system drive circuit 44, and determines whether or not the first chamber S1 has reached the “first target pressure” based on the detection result of the first sensor PS1. to decide. Further, the control unit 40 determines whether or not the second chamber S2 has reached the “second target pressure” based on the detection result of the second sensor PS2.

  When the control unit 40 determines that the pressure in the first chamber S1 is the “first target pressure” and the pressure in the second chamber S2 is the “second target pressure”, the control unit 40 Then, predetermined power is supplied to each catalyst body W. Then, the control unit 40 drives and controls the mass flow controller MFC to supply a predetermined source gas to the first chamber S1, and to perform a film forming process by decomposition and excitation of the source gas.

  During this time, the control unit 40 maintains the pressures of the first chamber S1 and the second chamber S2 at the “first target pressure” and the “second target pressure”, respectively, so that the deterioration of the catalyst body W can be reliably suppressed. Moreover, the cleanliness of the first chamber S1 can be maintained sufficiently high.

(Semiconductor device 50)
Next, the semiconductor device 50 manufactured using the CVD apparatus 10 will be described below. FIG. 7 is a principal cross-sectional view showing the semiconductor device 50.

  In FIG. 7, the semiconductor device 50 is, for example, a memory device including various RAMs and various ROMs, a logic device including MPUs and general-purpose logic, and the like. A plurality of element isolation regions 51 are formed on the substrate B of the semiconductor device 50, and thin film transistors Tr are formed in regions surrounded by the element isolation regions 51.

Each of the plurality of thin film transistors Tr includes a gate insulating film 52 made of a silicon oxide film and a gate electrode 53 made of a polysilicon film. A first sidewall 54 made of a silicon oxide film and a second sidewall 55 made of a silicon nitride film are formed around the gate insulating film 52 and the gate electrode 53, respectively. The gate electrode 53, the first sidewall 54, and the second sidewall 55 are each formed by a film forming process using the CVD apparatus 10.

  As a result, the semiconductor device 50 can maintain the film quality of the gate electrode 53, the first sidewall 54, and the second sidewall 55 under high reproducibility, thereby improving the productivity of the semiconductor device 50. be able to.

(Photoelectric conversion device 60)
Next, the photoelectric conversion apparatus 60 manufactured using the CVD apparatus 10 will be described below. FIG. 8 is a principal cross-sectional view showing the photoelectric conversion device 60.

  In FIG. 8, the photoelectric conversion device 60 is, for example, a silicon solar cell that uses the photovoltaic effect of a silicon film. The photoelectric conversion device 60 has a translucent substrate B such as a glass substrate, and a transparent electrode 61 made of a metal oxide or the like is formed on the surface of the substrate B. On the upper side of the transparent electrode 61, a p-type amorphous silicon film 62, an i-type amorphous silicon film 63, an n-type amorphous silicon film 64, and a metal electrode 65 are laminated in order. A p-i-n junction made of a silicon film is formed between 61 and the metal electrode 65. Each of the amorphous silicon films 62, 63, and 64 is formed by a film forming process using the CVD apparatus 10, respectively.

  Accordingly, the photoelectric conversion device 60 can maintain the film quality of each of the amorphous silicon films 62, 63, and 64 with high reproducibility, and can improve the productivity of the photoelectric conversion device 60. .

According to the said embodiment, there exist the following effects.
(1) In the above embodiment, the shower plate 24 divides the space S of the chamber body 21 into two, and forms the first chamber S1 for film formation and the second chamber S2 excluding the first chamber S1. To do. Moreover, the connection terminal holder 31 arrange | positions each connection terminal 32 in the 2nd chamber S2, respectively, and guides the both ends of the catalyst body W to the 2nd chamber S2, respectively. The first adjustment valve Vc1 adjusts the pressure in the first chamber S1 to “first target pressure”, and the second adjustment valve Vc2 sets the pressure in the second chamber S2 to be lower than the “first target pressure”. Adjust to “second target pressure”.

  Therefore, the catalyst body W in the first chamber S1 decomposes or activates the source gas, and executes the film forming process on the substrate B. Moreover, the catalyst body W of the second chamber S2 is disposed in a lower pressure space than the first chamber S1, thereby reducing the contact frequency with the source gas. Moreover, since the gas in the second chamber S2 does not flow into the first chamber S1, the cleanness of the film formation space is sufficiently maintained. As a result, the deterioration of the catalyst body W can be suppressed, and the productivity of the thin film can be improved.

  (2) Moreover, the partition which divides 1st chamber S1 and 2nd chamber S2 is comprised by the shower plate 24. FIG. Therefore, the number of members of the CVD apparatus 10 can be reduced as compared with the case where a separate partition is provided.

  (3) Moreover, the shower plate 24 is formed along the surface direction of the substrate B, and divides the second chamber S2 into a region facing the entire substrate B. Therefore, in the second chamber S2, the catalyst body W can be disposed at a position facing the entire substrate B. As a result, the arrangement position of the catalyst body W can be selected according to the size of the substrate B and the film formation conditions, and the productivity of the thin film can be further improved.

  (4) In the above-described embodiment, the control unit 40 drives and controls the first adjustment valve Vc1 and the second adjustment valve Vc2, and the “first target” is defined between the first chamber S1 and the second chamber S2. A differential pressure corresponding to “pressure” and “second target pressure” is formed. Therefore, the pressures in the first chamber S1 and the second chamber S2 can be adjusted with higher accuracy, and deterioration of the catalyst body W can be more reliably suppressed.

  (5) In the above-described embodiment, the connection terminal holder 31 is fitted into the communication hole H of the shower plate 24 and divides the first chamber S1 and the second chamber S2 in the region of the communication hole H. And the connection terminal holder 31 has the guide hole 33a which guides the catalyst body W from 2nd chamber S2 to 1st chamber S1 in the area | region of the communicating hole H. FIG.

  Accordingly, the selection range of the material and size of the shower plate 24 can be expanded without being restricted by the temperature of the catalyst body W. As a result, the application range of the CVD apparatus 10 can be expanded.

  (6) In the above embodiment, since the purity of the catalyst body W is 99.99% or more (more preferably 99.999% or more), the metal contamination level of the first chamber S1 due to the combustion of the catalyst body W Can be reduced. As a result, the electrical characteristics of the semiconductor device 50 and the photoelectric conversion device 60 can be improved by reducing the contamination level of the thin film.

In addition, you may implement the said embodiment in the following aspects.
In the above embodiment, the CVD apparatus is embodied in a cluster type system. For example, the CVD apparatus may be embodied in one catalytic CVD chamber 13. That is, the CVD apparatus of the present invention is not limited to various apparatuses for transporting a substrate, such as the LL chamber 11 and the transport chamber 12.

  In the above embodiment, the exhaust system 25 that is common to the first decompression unit and the second decompression unit is used. Not limited to this, different exhaust systems may be used for the first decompression means and the second decompression means. That is, the first decompression unit and the second decompression unit are not limited to the configuration of the exhaust system, but may be any configuration as long as the second chamber has a lower pressure than the first chamber.

  In the above embodiment, the first adjustment valve Vc1 and the second adjustment valve Vc2 are used for the first pressure reduction means and the second pressure reduction means, respectively. For example, a configuration in which a pressure adjustment valve is used for either the first pressure reducing unit or the second pressure reducing unit may be used. That is, each of the first pressure reducing means and the second pressure reducing means is not limited to the valve configuration, and may be any configuration as long as the second chamber has a lower pressure than the first chamber.

  In the above embodiment, the control unit 40 controls the first adjustment valve Vc1 to maintain the pressure in the first chamber S1 at the “first target pressure”. Further, the control unit 40 drives and controls the second adjustment valve Vc2 to maintain the pressure in the second chamber S2 at the “second target pressure”. For example, the pressure of the first chamber S1 is set to the “first target pressure” simply by fixing the flow path resistance of the first adjustment valve Vc1 to a predetermined flow path resistance and driving the exhaust system 25. It may be a configuration. Even if the flow resistance of the second adjustment valve Vc2 is fixed to a predetermined flow resistance and the exhaust system 25 is driven, the pressure in the second chamber S2 is set to the “second target pressure”. Good.

  In the above embodiment, a sealing material may be inserted between the connection terminal holder 31 and the shower plate 24. According to this, the amount of the raw material gas leaking into the second chamber S2 can be further reduced, and the deterioration of the catalyst body W can be further suppressed.

  In the above embodiment, the guide pin 33 is provided with the guide hole 33a. For example, the connection terminal holder 31 may be provided with the guide hole 33a and the guide pin 33 may be omitted. At this time, the connection terminal holder 31 is preferably configured using a material having excellent heat resistance (for example, quartz).

  -In above-mentioned embodiment, although the catalyst body W is actualized to a wire, it is not restricted to this, For example, you may form the catalyst body W in plate shape. In other words, the CVD apparatus of the present invention is not limited by the shape of the catalyst body, and may be any configuration as long as the connection region between the catalyst body and the connection terminal is disposed in the second chamber.

The top view which shows typically the CVD apparatus of this invention. Similarly, the sectional side view which shows a catalytic CVD chamber. Similarly, the top view which shows a catalytic CVD chamber. Similarly, the sectional side view which shows a connection terminal holder. Similarly, (a), (b), (c) is a figure which shows the attachment method of a catalyst body. Similarly, the electric block circuit diagram which shows the electric constitution of a CVD apparatus. Similarly, the sectional side view which shows a semiconductor device. Similarly, the sectional side view which shows a photoelectric conversion apparatus.

Explanation of symbols

  B ... substrate, H ... communication hole, LS ... gas line, S ... space, W ... catalyst body, S1 ... first chamber, S2 ... second chamber, 10 ... CVD apparatus, 22 ... stage, 24 ... shower plate, 31 ... Connection terminal holder, 32 ... Connection terminal, 33a ... Guide hole, 40 ... Control part.

Claims (10)

A processing vessel;
A partition provided in a space in the processing container, and partitioning the space in the processing container into a first chamber for film formation and a second chamber excluding the first chamber;
A communication hole provided in the partition wall for communicating the first chamber and the second chamber;
First decompression means for decompressing the first chamber;
A supply unit for supplying a source gas to the first chamber;
A stage for placing a substrate in the first chamber;
A catalyst body extending from the second chamber to the first chamber through the communication hole;
Second decompression means for decompressing the second chamber to a lower pressure than the first chamber;
A connection terminal arranged in the second chamber for supplying predetermined power to the catalyst body;
A connection terminal holder that is disposed in the second chamber and holds the connection terminal;
A CVD apparatus comprising: The CVD apparatus according to claim 1,
A CVD apparatus comprising: a control unit that drives and controls the first decompression unit and the second decompression unit to form a predetermined differential pressure between the first chamber and the second chamber. The CVD apparatus according to claim 1 or 2,
The partition is formed in a plate shape along the surface direction of the substrate, and defines the second chamber facing the whole of the substrate in a space in the processing container;
A CVD apparatus characterized by the above. The CVD apparatus according to any one of claims 1 to 3,
The connection terminal holder is
The first chamber and the second chamber are partitioned in the region of the communication hole by fitting into the communication hole, and the catalyst body is guided from the second chamber to the first chamber in the region of the communication hole. A CVD apparatus characterized by having a guide hole. A CVD apparatus according to any one of claims 1 to 4,
The supply unit
A shower plate that disperses and discharges the source gas into the first chamber;
A gas line for introducing the source gas into the shower plate,
The partition is
Being the shower plate,
A CVD apparatus characterized by the above. A CVD apparatus according to any one of claims 1 to 5,
The CVD apparatus characterized in that the connection terminal holder is made of quartz.   The CVD apparatus according to claim 1, wherein the purity of the catalyst body is 99.99% or more. The CVD apparatus according to any one of claims 1 to 7, wherein the purity of the catalyst body is 99.99.
A CVD apparatus characterized by being 999% or more. A semiconductor device comprising a layer containing silicon,
A semiconductor device, wherein the silicon-containing layer is formed using the CVD apparatus according to claim 1. A photoelectric conversion device including a layer containing silicon,
The photoelectric conversion device according to claim 1, wherein the silicon-containing layer is formed by using the CVD device according to claim 1.

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