JP2008281401A - Force detection device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a technology useful for miniaturizing a force detection device without damaging reliability or characteristics of the force detection device. <P>SOLUTION: This force detection device 1 is equipped with a semiconductor substrate 20 provided on the surface with a force detection part 60 for generating an electric signal corresponding to a working force, a semiconductor circuit substrate 220 provided on the surface with a circuit part 222 for processing the electric signal, and insulating blocks 50, 250 provided between the surface of the semiconductor substrate 20 and the surface of the semiconductor circuit substrate 220. The blocks 50, 250 have through-electrodes 52, 54, 252, 254 extending from a surface in contact with the semiconductor substrate 20 to a surface in contact with the semiconductor circuit substrate 220. The through-electrodes 52, 54, 252, 254 provide an electric signal from the force detection part 60 to the circuit part 222. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a force detection device that detects an acting force.

  2. Description of the Related Art A force detection device that converts a force generated by pressure, acceleration, angular velocity, and the like into an electric signal and detects pressure, acceleration, angular velocity, and the like from the electric signal is known. Many of this type of force detection devices are manufactured using a semiconductor substrate. On the surface of the semiconductor substrate, there is provided a force detector that converts a force generated by pressure, acceleration, angular velocity and the like into an electric signal. As an example of the force detection unit, one using a mesa step has been developed. The mesa step extends in a direction in which the piezoresistive effect appears, and the impurity introduction region passes through the mesa step and extends on the surface of the semiconductor substrate. When a force generated by pressure, acceleration, angular velocity, or the like acts on the mesa step, the resistance value of the impurity introduction region changes. By detecting this change in resistance value as a change in voltage value or current value, it is possible to detect the force acting on the mesa step, and thus to detect pressure, acceleration, angular velocity, and the like. Patent documents disclosing this type of force detection device are listed below.

JP 2000-180286 A JP 2001-74582 A JP 2004-132911 A JP 2006-58266 A

  In this type of force detection device, a circuit unit for processing the electrical signal generated by the force detection unit is required. The circuit unit is used for removing noise included in the electric signal or converting an analog signal into a digital signal.

  In order to improve the downsizing and convenience of the force detection device, a configuration in which the force detection unit and the circuit unit are integrated is desired. For example, as one method of integrating the force detection unit and the circuit unit, a method of electrically connecting the force detection chip provided with the force detection unit and the circuit chip provided with the circuit unit via a wire Can be considered. However, in order to make an electrical connection via a wire, a space for wiring the wire is required, which is unsuitable for downsizing the force detection device. Further, the wire may be damaged by vibration or the like, which adversely affects the reliability of the force detection device.

  As another method for integrating the force detection unit and the circuit unit, it is conceivable to mount the force detection unit and the circuit unit in one semiconductor substrate. However, the plane orientation of the semiconductor substrate that improves the sensitivity of the force detection unit and the plane orientation of the semiconductor substrate suitable for manufacturing the circuit unit are often different. For example, when the semiconductor substrate is silicon, the plane orientation for improving the sensitivity of the force detection unit is the (110) plane or a plane equivalent thereto, and the plane orientation suitable for manufacturing the circuit unit is the (100) plane. Or it is an equivalent surface. Therefore, when the force detection unit and the circuit unit are mounted on one semiconductor substrate, an optimum plane orientation is selected for one of the force detection unit and the circuit unit, and a plane orientation unsuitable for the other is selected. As a result, the characteristics of the force detection device are deteriorated.

  An object of the present invention is to provide a technique useful for downsizing a force detection device without impairing the reliability and characteristics of the force detection device.

In the technology disclosed in this specification, a semiconductor substrate provided with a force detection unit and a semiconductor substrate provided with a circuit unit are separately prepared, and the semiconductor substrate and circuit unit provided with a force detection unit are provided. Insulating blocks are provided between the semiconductor substrates provided with. A through electrode is provided in the block, and an electric signal of the force detection unit is provided to the circuit unit through the through electrode.
Since the semiconductor substrate for the force detection unit and the semiconductor substrate for the circuit unit are prepared separately, it is possible to adopt a plane orientation suitable for each of the semiconductor substrate for the force detection unit and the semiconductor substrate for the circuit unit. it can. Furthermore, since the force detection unit and the circuit unit are electrically connected by the through electrode, the reliability of the force detection device is higher than when a wire is used. As a result, the force detection device can be reduced in size without impairing the reliability and characteristics of the force detection device.

  That is, the first force detection device disclosed in the present specification includes a semiconductor substrate on the surface of which a force detection unit that generates an electric signal corresponding to an acting force is provided, and a circuit unit that processes the electric signal. Are provided on the surface, and an insulating block provided between the surface of the semiconductor substrate and the surface of the semiconductor circuit substrate. The block has a through electrode extending from a surface in contact with the semiconductor substrate to a surface in contact with the semiconductor circuit substrate. The through electrode provides an electric signal of the force detection unit to the circuit unit. Here, the block may have a form in which a plurality of insulating blocks are stacked.

In the first force detection device, the force detection unit includes a mesa step that crosses a groove provided on the surface of the semiconductor substrate, and an impurity introduction region that extends through the mesa step and extends on the surface of the semiconductor substrate. It is preferable to have it. In this case, the block abuts at least the surface of the semiconductor substrate located around the groove and one end of the impurity introduction region to seal the groove. The through electrode electrically connects one end of the impurity introduction region and the circuit portion.
According to this embodiment, the mesa step does not protrude from the surface of the semiconductor substrate. For this reason, the semiconductor substrate provided with the force detection unit and the block can be firmly bonded.

In the first force detection device, it is preferable that the block has a recess on a surface in contact with the semiconductor circuit board. The circuit part is arranged in the concave part.
According to this embodiment, a space is provided between the circuit unit and the block, and the circuit unit and the block are not in direct contact with each other. For this reason, the circuit unit can realize a stable operation.

The second force detection device disclosed in this specification has a configuration in which a force detection chip and a circuit chip are stacked. The force detection chip includes a first semiconductor substrate on a surface of which a first force detection unit that generates an electric signal corresponding to an acting force is bonded, and the first semiconductor substrate is bonded to the surface of the first semiconductor substrate. And an insulating first block having a first through electrode extending from the contacting surface to the opposite surface. The circuit chip is for a semiconductor circuit board having a circuit portion for processing an electric signal provided on the surface, and a circuit that is bonded to the surface of the semiconductor circuit board and extends from the surface in contact with the semiconductor circuit board to the opposite surface. And an insulating circuit block having a through electrode. The first block of the force detection chip and the circuit block of the circuit chip are joined so that the first through electrode and the through electrode for circuit are electrically connected. The first through electrode and the circuit through electrode provide an electric signal of the first force detection unit to the circuit unit.
Even in the above embodiment, the semiconductor substrate provided with the force detection unit and the semiconductor circuit substrate provided with the circuit unit are prepared separately, so that the semiconductor substrate for the force detection unit and the semiconductor circuit for the circuit unit are prepared. A plane orientation suitable for each of the substrates can be employed. Furthermore, since the force detection unit and the circuit unit are electrically connected by the first through electrode and the circuit through electrode, the force detection device is more reliable than when a wire is used. As a result, the force detection device can be reduced in size without impairing the reliability and characteristics of the force detection device.
Moreover, according to said form, a force detection chip and a circuit chip are prepared, respectively, and a force detection apparatus can be constructed | assembled by joining them. For example, if you prepare force detection chips with different sensitivities with a common standard, select a force detection chip with the required sensitivity according to the measurement target, and join the selected force detection chip with the circuit chip, It is possible to easily construct a force detection device that detects a measurement object with necessary sensitivity.

  Also in the second force detection device, the first force detection unit includes a first mesa step that crosses a groove provided on the surface of the first semiconductor substrate, and the first mesa step that passes through the first mesa step. It is preferable to have a first impurity introduction region extending on the surface. In this case, the first block abuts at least the surface of the first semiconductor substrate located around the groove and one end of the first impurity introduction region to seal the groove. The first through electrode and the circuit through electrode electrically connect one end of the first impurity introduction region and the circuit portion.

  Also in the second force detection device, it is preferable that the circuit block has a recess on the surface in contact with the semiconductor circuit board. The circuit part is arranged in the concave part.

The second force detection device preferably further includes a second force detection chip. The second force detection chip includes a second semiconductor substrate and an insulating second block. The second semiconductor substrate is provided with a second force detector on the surface for generating an electrical signal corresponding to the acting force. The second block has a second through electrode that is bonded to the surface of the second semiconductor substrate and extends from the surface in contact with the second semiconductor substrate to the opposite surface. In this case, the first semiconductor substrate, the first block, and the circuit block are provided with an inter-stack through electrode extending between these stacks. The first semiconductor substrate and the second block are joined so that the second through electrode and the inter-stack through electrode are electrically connected, and the second through electrode and the inter-stack through electrode are electrically connected to the second force detection unit. The signal is provided to the circuit section.
When the second force detection chip is provided, the first force detection unit and the second force detection unit may be configured so that the amount of change in the electrical signal with respect to the acting force is different. The force detection device of this form includes a first force detection unit and a second force detection unit that have different sensitivities. For example, if the first force detection unit has high sensitivity and the second force detection unit has low sensitivity, the first force detection unit detects a small force with a fine resolution and the second force detection unit generates a large force. It can be detected with coarse resolution.
Further, when the second force detection chip is provided, the first force detection unit and the second force detection unit may be configured to detect different physical quantities. The force detection device of this embodiment includes a first force detection unit and a second force detection unit that can detect different physical quantities. The physical quantity here includes pressure, acceleration, angular velocity and the like. For example, when the first force detection unit sets pressure as a detection target and the second force detection unit sets acceleration as a detection target, the pressure and acceleration can be detected by one force detection device. Also, the temperature can be detected by utilizing the temperature dependence of the force detection chip.

In the second force detection device, the second force detection unit includes a second mesa step that crosses a groove provided on the surface of the second semiconductor substrate, and the second mesa step that passes through the second mesa step. It is preferable to have a second impurity introduction region extending on the surface. In this case, the second block abuts at least the surface of the second semiconductor substrate located around the groove and one end of the second impurity introduction region to seal the groove. The second through electrode and the inter-stack through electrode electrically connect one end of the second impurity introduction region and the circuit unit.
According to this embodiment, the second mesa step does not protrude from the surface of the second semiconductor substrate. For this reason, the 2nd semiconductor substrate in which the 2nd force detection part is provided, and the 2nd block can be joined firmly.

  According to the technology disclosed in this specification, the semiconductor substrate provided with the force detection unit and the semiconductor substrate provided with the circuit unit are prepared separately, so that the semiconductor substrate and the circuit unit of the force detection unit are provided. A plane orientation suitable for each of the semiconductor substrates can be employed. Furthermore, since the force detection unit and the circuit unit are electrically connected by the through electrode, the reliability of the force detection device is higher than when a wire is used. As a result, the force detection device can be reduced in size without impairing the reliability and characteristics of the force detection device.

The technical features disclosed in this specification will be listed.
(First Feature) The force detection unit has a mesa step. The mesa step may be of a type protruding on the surface of the semiconductor substrate or of a type defined by a groove on the surface of the semiconductor substrate. In the latter case, the semiconductor substrate and the block can be firmly bonded.
(Second Feature) The force detection device preferably includes a series of force detection chips. In the series of force detection chips, the arrangement of electrodes that are in electrical contact with the circuit chip is designed in accordance with a common standard. Thereby, a force detection chip having a suitable sensitivity according to the measurement target is prepared, and a force detection device capable of measuring with a required sensitivity can be constructed by joining the force detection chip to the circuit chip.
(Third Feature) The force detection device preferably includes a series of circuit chips. The series of circuit chips are designed in accordance with a common standard in the arrangement of electrodes that are in electrical contact with the force detection chip and / or other circuit chips. Accordingly, a force detection device capable of executing necessary arithmetic processing can be constructed by preparing necessary types of circuit chips according to necessary arithmetic processing and combining the circuit chips.

(First embodiment)
FIG. 1 schematically shows a perspective view of a force detection device 1 that measures the pressure in a detection space such as the atmosphere, a hydraulic pump of a hydraulic mechanism, a fuel pipe, an internal combustion engine, and the like. As shown in FIG. 1, the force detection device 1 includes a force detection chip 10 and a circuit chip 200, and includes a form in which the force detection chip 10 and the circuit chip 200 are integrated. The force detection chip 10 is laminated on a part of the surface of the circuit chip 200. The force detection chip 10 and the circuit chip 200 are bonded using anodic bonding. The force detection chip 10 generates an electrical signal corresponding to the pressure in the detection space. The electric signal is provided to the circuit chip 200. The circuit chip 200 removes noise from the electric signal and converts the analog signal into a digital signal. The obtained digital signal reflects the pressure in the detection space and is used for control according to the purpose.

  FIG. 2 schematically shows an exploded perspective view of the force detection chip 10. 3 or 4 is a longitudinal sectional view corresponding to the line III-III or IV-IV in FIG. It should be noted that the exploded perspective view of the force detection chip 10 of FIG. 2 and the longitudinal sectional view of the force detection chip of FIGS. 3 and 4 are shown upside down with respect to the force detection chip 10 of FIG. I want to be.

As shown in FIG. 2, the force detection chip 10 includes a semiconductor substrate 20 made of single crystal silicon, an insulating layer 30 made of a thermal oxide film, and an insulating first block 50. The semiconductor substrate 20 and the first block 50 are bonded via the insulating layer 30.
The semiconductor substrate 20 contains n-type impurities, and the impurity concentration is about 1 × 10 ¹⁴ to 1 × 10 ¹⁷ cm ⁻³ . On the surface of the semiconductor substrate 20, a force detection unit 60 that generates an electrical signal corresponding to the load is provided. The force detection unit 60 includes a mesa step 24 that crosses a rectangular groove 40 provided on the surface of the semiconductor substrate 20, and an impurity introduction region 22 that passes through the mesa step 24 and extends on the surface of the semiconductor substrate 20. And. The groove 40 is formed deeper than the thickness of the insulating layer 30. The groove 40 can be formed on the surface of the semiconductor substrate 20 using an etching technique. The groove 40 is constituted by adjacent dispersion grooves 42 and 44, and a mesa step 24 is formed between the dispersion groove 42 and the dispersion groove 44. The dispersion grooves 42 and the dispersion grooves 44 have a line-symmetric shape with the mesa step 24 as an axis of symmetry. The surface of the semiconductor substrate 20 is a (110) plane. The mesa step 24 extends in the <110> direction where the piezoresistive effect appears greatly.

The impurity introduction region 22 contains a p-type impurity, and the impurity concentration is about 1 × 10 ¹⁸ to 2 × 10 ²⁰ cm ⁻³ . The impurity introduction region 22 has a conductivity type opposite to that of the n-type semiconductor substrate 20. Therefore, the impurity introduction region 22 and the semiconductor substrate 20 are electrically insulated. The impurity introduction region 22 passes through the mesa step 24 and crosses the groove 40. The impurity introduction region 22 is formed so as to protrude greatly laterally from the boundary between the mesa step 24 and the groove 40. Further, the impurity introduction region 22 is formed to be wide at a portion protruding laterally from the mesa step 24.

  As shown in FIG. 2, one end of the impurity introduction region 22 is electrically connected to the positive contact region 32. The positive contact region 32 penetrates the insulating layer 30 and is exposed on the surface of the insulating layer 30. Further, the other end of the impurity introduction region 22 is electrically connected to the negative contact region 34. The negative contact region 34 penetrates the insulating layer 30 and is exposed on the surface of the insulating layer 30. For the positive contact region 32 and the negative contact region 34, Al, Al—Si, Al—Si—Cu, or the like is used.

  The first block 50 is bonded to the entire surface of the semiconductor substrate 20 via the insulating layer 30, and covers the groove 40, the positive contact region 32, and the negative contact region 34. The first block 50 is anodically bonded to the insulating layer 30. A glass block is used for the first block 50. The surface of the insulating layer 30 covering the top surface of the mesa step 24 and the surface of the insulating layer 30 covering the surface of the semiconductor substrate 20 around the groove 40 are in the same plane. For this reason, the first block 50 can be bonded to the surface of the semiconductor substrate 20 via the insulating layer 30 in a state where the mesa step 24 is sealed from the outside.

  The first block 50 includes a positive first through electrode 52 that penetrates from the front surface to the back surface and is in contact with the positive contact region 32. The positive first through electrode 52 is electrically connected to one end of the impurity introduction region 22 through the positive contact region 32. The first block 50 further includes a negative first through electrode 54 that penetrates from the front surface to the back surface and contacts the negative contact region 34. The negative first through electrode 54 is electrically connected to the other end of the impurity introduction region 22 through the negative contact region 34. For the positive first through electrode 52 and the negative first through electrode 54, Kovar or Invar having a low thermal expansion coefficient is used.

Here, a method for anodic bonding of the insulating layer 30 and the first block 50 will be described.
FIG. 5 shows a stage before anodic bonding is performed. As shown in FIG. 5, the positive contact region 32 and the negative contact region 34 are formed so as to be narrower than the through hole formed in the insulating layer 30 and protrude from the through hole. Next, when the first block 50 is brought into contact with the surface of the insulating layer 30, the positive contact region 32 and the negative contact region 34 are pressed to extend in the through hole. The material of the positive contact region 32 and the negative contact region 34 is aluminum and is soft. As a result, as shown in FIG. 3, the positive contact region 32 and the negative contact region 34 are filled in the through holes of the insulating layer 30. Next, a high electrostatic field is applied between the first block 50 and the semiconductor substrate 20 at a high temperature. Thereby, a covalent bond is formed between the first block 50 and the insulating layer 30, and the first block 50 and the insulating layer 30 are firmly bonded.

  As shown in FIG. 3, the positive contact region 32 and the negative contact region 34 are preferably fitted in the through hole of the insulating layer 30 after being pressed. However, as shown in FIG. 6, the positive side contact region 32 and the negative side contact region 34 may be formed in an amount more than necessary due to manufacturing tolerances. In such a case, as shown in FIG. 7, when the insulating layer 30 and the first block 50 are anodically bonded, a space is formed between the insulating layer 30 and the first block 50.

In the force detection chip 10, since the impurity introduction region 22 protrudes laterally from the boundary between the mesa step 24 and the groove 40, there is a horizontal distance D20 between the end of the mesa step 24 and the positive contact region 32. It is secured. Similarly, a horizontal distance D20 is secured between the end of the mesa step 24 and the negative contact region 34. For this reason, even if a space is formed between the insulating layer 30 and the first block 50, the space can remain within the distance D20. Accordingly, in the force detection chip 10, even if a space is formed between the insulating layer 30 and the first block 50, the first block 50 can contact the entire top surface of the mesa step 24. The mesa step 24 is a region where a compressive load is relatively strongly applied. On the other hand, the region lateral from the end of the mesa step 24 is a region where the compressive load is applied relatively weakly. For this reason, in the force detection chip 10, the first block 50 and the entire top surface of the mesa step 24 are surely in contact with each other, so that a region where a compressive load is applied relatively strongly can be used reliably. On the other hand, a region where a space is formed between the insulating layer 30 and the first block 50 and the area where the insulating layer 30 and the first block 50 are in contact is a region where a compressive load is applied relatively weakly. Therefore, even if the area where the insulating layer 30 and the first block 50 are in contact with each other varies, the influence on the change in the resistance value of the impurity introduction region 22 is small. Further, since the width of the impurity introduction region 22 in the region is formed large, the resistance value of the region is reduced, and the influence of the space on the change in the resistance value of the impurity introduction region 22 is further reduced.
As a result, the force detection chip 10 can eliminate the influence of the space between the insulating layer 30 and the first block 50, and can obtain uniform characteristics for each manufacturing.

Next, the circuit chip 200 will be described. FIG. 8 schematically shows an exploded perspective view of the circuit chip 200.
As shown in FIG. 8, the circuit chip 200 includes a semiconductor circuit substrate 220 made of single crystal silicon, an insulating layer 230 made of an oxide film, and an insulating circuit block 250. The semiconductor circuit substrate 220 and the circuit block 250 are bonded via an insulating layer 230.
A circuit portion 222 is provided on the surface of the semiconductor circuit substrate 220. The circuit unit 222 includes an impurity introduction region introduced into the surface of the semiconductor circuit substrate 220, wirings formed on the surface of the semiconductor circuit substrate 220, and the like, for example, a transistor, a resistance element, a capacitor, a switching element, and the like. Circuit elements are configured. In the circuit unit 222, an amplifier circuit, a filter circuit, and an A / D conversion circuit are constructed by a plurality of types of circuit elements. The circuit unit 222 processes the electrical signal generated by the force detection chip 10. The insulating layer 230 is provided with a window in a region corresponding to the circuit portion 222. The surface of the semiconductor circuit board 220 is a (100) plane. A surface orientation suitable for the circuit unit 222 is employed on the surface of the semiconductor circuit substrate 220.

As shown in FIG. 8, a plurality of contact regions 232, 234, 236, 237, and 238 are provided around the circuit portion 222. Each contact region 232, 234, 236, 237, 238 penetrates the insulating layer 230 and is exposed on the surface of the insulating layer 230, and aluminum is used as the material thereof. Each contact region 232, 234, 236, 237, 238 is electrically connected to the circuit unit 222 through an impurity introduction region or wiring formed on the surface of the semiconductor circuit substrate 220.
Reference numeral 232 is a positive contact area, reference numeral 234 is a negative contact area, reference numeral 236 is an output contact area, reference numeral 237 is a negative power contact area, and reference numeral 238 is a positive power contact area. .

  The circuit block 250 is bonded to the entire surface of the semiconductor circuit substrate 220 via an insulating layer 230 and covers the circuit portion 222 and the contact regions 232, 234, 236, 237 and 238. The circuit block 250 is anodically bonded to the insulating layer 230. A glass block is used for the circuit block 250. The circuit block 250 includes a recess 240 on the surface to be joined to the semiconductor circuit substrate 220. The recess 240 is provided corresponding to the circuit portion 222 of the semiconductor circuit board 220, and the circuit portion 222 is disposed in the recess 240 when the semiconductor circuit substrate 220 and the circuit block 250 are joined. For this reason, a space is provided between the circuit unit 222 and the circuit block 250, and the circuit unit 222 and the circuit block 250 are not in direct contact with each other. For this reason, the circuit unit 222 can realize a stable operation.

  The circuit block 250 includes a plurality of through electrodes 252, 254, 256, 257 and 258 that penetrate from the front surface to the back surface. The positive-side circuit through electrode 252 is in contact with the positive-side contact region 232 and is electrically connected to the circuit unit 222 through the positive-side contact region 232. The negative-side circuit through electrode 254 is in contact with the negative-side contact region 234 and is electrically connected to the circuit unit 222 via the negative-side contact region 234. The output through electrode 256 is in contact with the output contact region 236 and is electrically connected to the circuit unit 222 via the output contact region 236. The negative power supply through electrode 257 is in contact with the negative power supply contact region 237 and is electrically connected to the circuit unit 222 via the negative power supply contact region 237. The positive power supply through electrode 258 is in contact with the positive power supply contact region 238 and is electrically connected to the circuit unit 222 via the positive power supply contact region 238. For each through electrode 252, 254, 256, 257, 258, Kovar having a low thermal expansion coefficient is used.

FIG. 9 is a longitudinal sectional view corresponding to the line IX-IX in FIG.
As shown in FIG. 9, in the state where the force detection chip 10 and the circuit chip 200 are stacked, the positive first through electrode 52 of the force detection chip 10 and the positive circuit through electrode 252 of the circuit chip 200 are electrically connected. is doing. Similarly, in the other cross section, the negative first through electrode 54 of the force detection chip 10 and the negative circuit through electrode 254 of the circuit chip 200 are electrically connected. For this reason, the electrical signal generated by the force detection unit 60 of the force detection chip 10 is transferred to the circuit unit 222 of the circuit chip 200 via the through electrodes 52 and 54 of the force detection chip 10 and the through electrodes 252 and 254 of the circuit chip 200. Provided. The circuit unit 222 amplifies, removes noise, and converts the provided electric signal into a digital signal.

  In the force detection device 1, when viewed in plan, the positional relationship between the positive first through electrode 52 and the negative first through electrode 54 of the force detection chip 10 is negative with respect to the positive circuit through electrode 252 of the circuit chip 200. This corresponds to the positional relationship of the side circuit through electrode 254. For this reason, the force detection part 60 of the force detection chip 10 and the circuit part 222 of the circuit chip 200 can be electrically connected by simply laminating the force detection chip 10 on the surface of the circuit chip 200 and anodic bonding. For example, even in another force detection chip having force detection units with different sensitivities, if the positional relationship between the positive first through electrode and the negative first through electrode is arranged in accordance with the common standard, the force The detection chip can be stacked on the circuit chip 200 to construct a force detection device.

FIG. 10 shows a specific installation method for installing the force detection device 1 in the hydraulic pipe of the hydraulic mechanism. FIG. 10 shows a pressure sensor 2 in which the force detection device 1 is covered with a coating agent (not shown).
The pressure sensor 2 is fixed to the output lead 256a fixed to the output through electrode 256 of the circuit chip 200, the negative power supply lead 257a fixed to the negative power supply through electrode 257, and the positive power supply through electrode 258. A positive power supply lead 258a. Solder is used to fix the output through electrode 256 and the output lead 256a, the negative power supply through electrode 257 and the negative power supply lead 257a, and the positive power supply through electrode 258 and the positive power supply lead 258a. A conductive adhesive may be used instead of solder.
In the pressure sensor 2, the entire force detection device 10 is covered with a coating agent (not shown). As the material for the coating agent, a silicon-based material or a fluorine-based material is used. A part of the output lead 256a, a part of the negative power supply lead 257a, and a part of the positive power supply lead 258a extend from the coating agent.

  The pressure sensor 2 is installed in a hydraulic pipe by a throwing type. When the pressure in the hydraulic pipe is applied to the force detection chip 10 via the coating agent, a compressive load is applied to the mesa step 24 of the force detection chip 10 and the resistance value of the mesa step 24 changes. A constant current is supplied to the mesa step 24, and a change in resistance value appears as a change in voltage value. The voltage value of the mesa step 24 is provided to the circuit unit 222 via the through-electrodes 52 and 54 of the force detection chip 10 and the through-electrodes 252 and 254 of the circuit chip 200, and is digital after noise is removed in the circuit unit 222. It is converted into a signal and provided to the outside through the output lead 256a.

  According to the force detection device 1, since the semiconductor substrate 20 of the force detection chip 10 and the semiconductor circuit substrate 220 of the circuit unit chip 200 are prepared separately, the semiconductor substrate 20 of the force detection chip 10 has a (110) plane. The (100) plane is adopted for the semiconductor circuit board 220 of the circuit unit chip 200. Since the plane orientation suitable for each is adopted, the force detection device 1 having excellent characteristics can be obtained. Furthermore, since the force detection chip 10 and the circuit chip 200 are electrically connected by the through electrodes 52, 54, 252, and 254, the reliability of the force detection device 1 is higher than when wires are used. Is expensive. As a result, the force detection device 1 can be downsized without impairing the reliability and characteristics of the force detection device 1.

FIG. 11 shows an example in which the force detection device 1 is mounted on the hermetic seal terminal 11. As shown in FIG. 11, the force detection device 1 is fixed to the mounting surface of the hermetic seal terminal 11. The hermetic terminal 11 includes a lead 12 extending therethrough in a state where hermeticity is maintained by the sealing glass 11a. A terminal 13 is provided at one end of the lead 12. The hermetic terminal 11 is provided with three leads 12, and each lead 12 has three leads 12 for the output through electrode 256, the negative power supply through electrode 257, and the positive power supply through electrode 258 of the circuit chip 200. It is electrically connected via a wire 14.
As shown in FIG. 11, the force detection device 1 can be used by being mounted on a hermetic seal terminal 11.

(Another embodiment of the circuit chip)
FIG. 12 schematically shows an exploded perspective view of another example of the circuit chip 100. FIG. 13 is a longitudinal sectional view taken along line XIII-XIII in FIG.
As shown in FIG. 12, the circuit chip 100 includes a semiconductor substrate 120 made of single crystal silicon, an insulating layer 130 made of a thermal oxide film, and an insulating first block 150. The semiconductor substrate 120 and the first block 150 are joined via the insulating layer 130.
The semiconductor substrate 120 contains p-type impurities, and the impurity concentration is about 1 × 10 ¹⁸ to 2 × 10 ²⁰ cm ⁻³ . On the surface of the semiconductor substrate 120, a force detection unit 160 that generates an electrical signal corresponding to the load is provided. The force detection unit 160 includes a mesa step 124 that crosses a circular groove 140 provided on the surface of the semiconductor substrate 120, and an impurity introduction region 122 that extends through the mesa step 124 and extends on the surface of the semiconductor substrate 120. And. The groove 140 is formed deeper than the thickness of the insulating layer 130. The groove 140 can be formed on the surface of the semiconductor substrate 120 using an etching technique. The groove 140 is constituted by an adjacent dispersion groove 142 and dispersion groove 144, and a mesa step 124 is formed between the dispersion groove 142 and the dispersion groove 144. The dispersion groove 142 and the dispersion groove 144 have line-symmetric shapes with the mesa step 124 as an axis of symmetry. In the circuit chip 100, corners corresponding to polygonal item points are not formed on the side surfaces of the dispersion grooves 142 and 144 when the groove 140 is viewed in plan. Therefore, the semiconductor substrate 120 and the block 150 around the groove 140 are joined in a geometrically stable state. As a result, the proportional relationship between the load acting on the block 150 and the compression load of the mesa step 124 is improved. The surface of the semiconductor substrate 120 is a (110) plane. The mesa step 124 extends in the <110> direction where the piezoresistive effect greatly appears.

The impurity introduction region 122 includes a p-type impurity, and the impurity concentration is about 1 × 10 ¹⁴ to 1 × 10 ¹⁷ cm ⁻³ . One end of the impurity introduction region 122 is formed so as to protrude greatly laterally from the boundary between the mesa step 124 and the groove 140. Note that one end of the impurity introduction region 122 may be formed wide at a portion that protrudes laterally from the boundary between the mesa step 124 and the groove 140.

  One end of the impurity introduction region 122 is electrically connected to the positive contact region 132. The positive contact region 132 passes through the insulating layer 130 and is exposed on the surface of the insulating layer 130. For this reason, since one end of the impurity introduction region 122 protrudes laterally from the boundary between the mesa step 124 and the groove 140, a horizontal distance is ensured between the end of the mesa step 124 and the positive contact region 132. ing. Therefore, even if the area in contact with the first block 150 varies, the influence on the change in resistance value of the impurity introduction region 122 is small.

As shown in FIG. 13, the semiconductor substrate 120 includes a well region 128. The well region 128 surrounds other than the other end of the impurity introduction region 122. The well region 128 includes an n-type impurity, and the impurity concentration is about 1 × 10 ¹⁵ to 1 × 10 ¹⁸ cm ⁻³ . Therefore, a pn junction is formed between the impurity introduction region 122 and the well region 128, and the other end of the impurity introduction region 128 is electrically isolated from the surroundings by the well region 128. The other end of the impurity introduction region 122 not surrounded by the well region 128 is in contact with the semiconductor substrate 120. Since the impurity introduction region 122 and the semiconductor substrate 120 are the same p-type, the other end of the impurity introduction region 122 and the semiconductor substrate 120 are electrically connected.

  The force detection chip 100 includes a back surface negative electrode 126 formed on the back surface of the semiconductor substrate 120. Aluminum or nickel is used for the material of the back negative electrode 126. The back negative electrode 126 is formed on the entire back surface of the semiconductor substrate 120 and is electrically connected to the semiconductor substrate 120. As a result, the other end of the impurity introduction region 122 is electrically connected to the back negative electrode 126 through the semiconductor substrate 120.

  The force detection chip 100 further includes an insulating first block 150. The first block 150 is bonded to the entire surface of the semiconductor substrate 120 via the insulating layer 130 and covers the groove 140 and the positive contact region 132. The first block 150 is anodically bonded to the insulating layer 130. A glass block is used for the first block 150. The surface of the insulating layer 130 covering the top surface of the mesa step 124 and the surface of the insulating layer 130 covering the surface of the semiconductor substrate 120 around the groove 140 are in the same plane. Therefore, the first block 150 can be bonded to the surface of the semiconductor substrate 120 via the insulating layer 130 with the mesa step 124 sealed from the outside.

  The first block 150 includes a positive first through electrode 152 that penetrates from the front surface to the back surface and contacts the positive contact region 132. The positive first through electrode 152 is electrically connected to one end of the impurity introduction region 122 through the positive contact region 132. The positive first through electrode 152 is made of Kovar having a low coefficient of thermal expansion.

Next, the circuit chip 300 will be described. FIG. 14 schematically shows an exploded perspective view of the circuit chip 300.
As shown in FIG. 14, the circuit chip 300 includes a semiconductor circuit substrate 320 made of single crystal silicon, an insulating layer 330 made of an oxide film, and an insulating circuit block 350. The semiconductor circuit substrate 320 and the circuit block 350 are bonded via an insulating layer 330.
A circuit portion 322 is provided on the surface of the semiconductor circuit substrate 320. The circuit unit 322 includes an impurity introduction region introduced into the surface of the semiconductor circuit substrate 320, wirings formed on the surface of the semiconductor circuit substrate 320, and the like, for example, a circuit such as a resistance element, a capacitor, and a switching element. An element is configured. In the circuit unit 320, an amplifier circuit, a filter circuit, and an A / D conversion circuit are constructed by a plurality of types of circuit elements. The circuit unit 322 processes the electrical signal generated by the force detection chip 100. The insulating layer 330 is provided with a window in a region corresponding to the circuit portion 322. The surface of the semiconductor circuit board 320 is a (100) plane. A surface orientation suitable for the circuit unit 322 is employed on the surface of the semiconductor circuit substrate 320.

As shown in FIG. 14, a plurality of contact regions 332, 336, 337, and 338 are provided around the circuit portion 322. Each contact region 332, 336, 337, 338 penetrates the insulating layer 330 and is exposed on the surface of the insulating layer 330, and aluminum is used as the material thereof. Each contact region 332, 336, 337, 338 is electrically connected to the circuit unit 322 via an impurity introduction region or wiring formed on the surface of the semiconductor circuit substrate 320.
Reference numeral 332 is a positive contact area, reference numeral 336 is an output contact area, reference numeral 337 is a negative power contact area, and reference numeral 338 is a positive power contact area.

  The circuit block 350 is bonded to the entire surface of the semiconductor circuit substrate 320 via an insulating layer 330 and covers the circuit portion 322 and the contact regions 332, 336, 337, and 338. The circuit block 350 is anodically bonded to the insulating layer 330. A glass block is used for the circuit block 350. The circuit block 350 includes a recess 340 on the surface to be joined to the semiconductor circuit substrate 320. The recess 340 is provided corresponding to the circuit portion 322 of the semiconductor circuit substrate 320, and the circuit portion 322 is disposed in the recess 340 when the semiconductor circuit substrate 320 and the circuit block 350 are joined. Therefore, a space is provided between the circuit unit 322 and the circuit block 350, and the circuit unit 322 and the circuit block 350 are not in direct contact with each other. For this reason, the circuit portion 322 can realize a stable operation.

  The circuit block 350 includes a plurality of through electrodes 352, 356, 357, and 358 that penetrate from the front surface to the back surface. The positive-side circuit through electrode 352 is in contact with the positive-side contact region 332 and is electrically connected to the circuit unit 322 through the positive-side contact region 332. The output through electrode 356 is in contact with the output contact region 336 and is electrically connected to the circuit unit 322 through the output contact region 336. The negative power supply through electrode 357 is in contact with the negative power supply contact region 337 and is electrically connected to the circuit portion 322 through the negative power supply contact region 337. The positive power supply through electrode 358 is in contact with the positive power supply contact region 338 and is electrically connected to the circuit unit 322 through the positive power supply contact region 338. For each through electrode 352, 356, 357, 358, Kovar having a low thermal expansion coefficient is used.

FIG. 15 is a longitudinal sectional view of the force detection device 3 in which the force detection chip 100 and the circuit chip 300 are stacked.
As shown in FIG. 15, in a state where the force detection chip 100 and the circuit chip 300 are stacked, the positive first through electrode 152 of the force detection chip 100 and the positive circuit through electrode 352 of the circuit chip 300 are electrically connected. is doing. Therefore, the electrical signal generated by the force detection unit 160 of the force detection chip 100 is provided to the circuit unit 322 of the circuit chip 300 via the positive first through electrode 152 and the positive circuit through electrode 352. The circuit unit 322 amplifies, removes noise, and converts the provided electric signal into a digital signal.

  In the force detection device 3, the position of the positive circuit through electrode 152 of the force detection chip 100 coincides with the position of the positive circuit through electrode 354 of the circuit chip 300 when viewed in plan. For this reason, the force detection part of the force detection chip 100 and the circuit part 322 of the circuit chip 300 can be electrically connected by simply laminating the force detection chip 100 on the surface of the circuit chip 300.

FIG. 16 shows a specific installation method for installing the force detection device 3 in the hydraulic pipe of the hydraulic mechanism. FIG. 16 shows a pressure sensor 4 in which the force detection device 3 is coated with a coating agent (not shown).
The pressure sensor 4 is fixed to the output lead 356a fixed to the output through electrode 356 of the circuit chip 300, the negative power supply lead 357a fixed to the negative power supply through electrode 357, and the positive power supply through electrode 358. A positive power supply lead 358a and a back negative electrode lead 126a fixed to the back negative electrode 126 of the force detection chip 100. The output through electrode 356 and the output lead 356a, the negative power supply through electrode 357 and the negative power supply lead 357a, the positive power supply through electrode 358 and the positive power supply lead 358a, and the back surface negative side electrode 126 and the back surface negative electrode lead 126a are fixed. Solder is used. A conductive adhesive may be used instead of solder. The potential of the back surface negative electrode lead 126a is the same as the potential of the negative power supply lead 357a.
In the pressure sensor 4, the entire force detection device 3 is covered with a coating agent (not shown). As the material for the coating agent, a silicon-based material or a fluorine-based material is used. A part of the output lead 356a, a part of the negative power supply lead 357a, a part of the positive power supply lead 358a, and a part of the back surface negative electrode lead 126a extend from the coating agent.

  The pressure sensor 4 is installed in a hydraulic pipe by a throwing type. When the pressure in the hydraulic pipe is applied to the force detection chip 100 via the coating agent, a compressive load is applied to the mesa step 124 of the force detection chip 100, and the resistance value of the mesa step 124 changes. A constant current is supplied to the mesa step 124, and the conversion of the resistance value appears as a change in the voltage value. The voltage value of the mesa step 124 is provided to the circuit unit 322 via the through electrode 152 of the force detection chip 100 and the through electrode 352 of the circuit chip 300, and is converted into a digital signal after noise is removed in the circuit unit 322. , And provided to the outside through the output lead 356a.

  According to the force detection device 3, since the semiconductor substrate 120 of the force detection chip 100 and the semiconductor circuit substrate 320 of the circuit unit chip 300 are prepared separately, the semiconductor substrate 120 of the force detection chip 100 has a (110) plane. The (100) plane is adopted for the semiconductor circuit substrate 320 of the circuit unit chip 300. Since the plane orientation suitable for each is adopted, the force detection device 3 having excellent characteristics can be obtained. Furthermore, since the force detection chip 100 and the circuit chip 300 are electrically connected by the through electrodes 152 and 352, the reliability of the force detection device 3 is higher than when a wire cable is used. As a result, the force detection device 3 can be downsized without impairing the reliability and characteristics of the force detection device 3.

(Second embodiment)
FIG. 17 schematically shows a longitudinal sectional view of the force detection device 5 in which two types of force detection chips 400 and 500 are stacked on the surface of the circuit chip 600. FIG. 18 shows a top view of the force detection device 5. A longitudinal section corresponding to line XVII-XVII in FIG. 18 corresponds to the longitudinal section in FIG. In addition, when the last two digits of the reference numerals attached to the drawings are the same as the last two digits of the above-described embodiment, the constituent elements have the same functions, and the description thereof will be omitted below.

The force detection device 5 includes a first force detection chip 500 and a second force detection chip 400. Each of the first force detection chip 500 and the second force detection chip 400 includes force detection units having different sensitivities. For example, if the area of the top surface of the mesa step provided in the force detection unit is different, the amount of change in resistance value with respect to the load acting on the mesa step will be different, and the sensitivity of the force detection unit will be different Can do.
The force detection unit of the first force detection chip 500 generates an electrical signal corresponding to the pressure in the hydraulic pipe, and the electrical signal is provided to the circuit unit 622 of the circuit chip 600. The force detection unit of the second force detection chip 400 also generates an electrical signal corresponding to the pressure in the hydraulic pipe, and the electrical signal is also provided to the circuit unit 622 of the circuit chip 600. The circuit chip 600 removes noise from these electric signals and converts an analog signal into a digital signal. As shown in FIG. 18, the obtained digital signal reflects the result of the first force detection chip 500 and the digital signal reflecting the result of the first force detection chip 500 is provided to the outside from the first output through electrode 656. The digital signal is provided from the second output through electrode 657 to the outside. Reference numeral 658 denotes a negative power supply through electrode, and reference numeral 659 denotes a positive power supply through electrode.

The first force detection chip 500 includes a first semiconductor substrate 520, an insulating layer 530, and a first block 550. As shown in FIGS. 17 and 18, the electrical signal generated by the force detection unit of the first force detection chip 500 is transmitted through the through electrodes 552 and 554 of the force detection chip 500 and the through electrodes 652 and 654 of the circuit chip 600. Provided to the circuit portion 622 of the circuit chip 600.
As shown in FIG. 17, the first force detection chip 500 further provides a first semiconductor substrate 520 to provide an electric signal generated by the force detection unit of the second force detection chip 400 to the circuit unit 622 of the circuit chip 600. A positive through-hole electrode 522 that passes through the first block 550, and a positive through-hole electrode 551 that passes through the first block 550. The positive through-hole electrode 522 can be formed by evaporating metal on the inner wall of the through hole provided in the first semiconductor substrate 520.
The circuit chip 600 includes a positive circuit through electrode 651 that penetrates the circuit block 650. The positive side circuit through electrode 651 is electrically connected to the positive side through electrode 551 of the first force detection chip 500. The positive side through-hole electrode 522 and the positive side through electrode 551 of the first force detection chip 500 and the positive side circuit through electrode 651 of the circuit chip 600 constitute a positive side through-hole through electrode. Are electrically connected to the circuit portion 622 through the positive contact region 631. As shown in FIG. 18, the same configuration is provided as the negative interlaminar through electrodes 524, 554, 654.

The second force detection chip 400 includes a second semiconductor substrate 420, an insulating layer 430, and a second block 450. As shown in FIG. 17, the positive second through electrode 452 of the second force detection chip 400 is electrically connected to the positive through hole electrode 522 of the first force detection chip 500. As shown in FIG. 18, the same configuration is also provided on the negative side, and the negative second through electrode 454 of the second force detection chip 400 is the negative through hole electrode of the first force detection chip 500. 524 is electrically connected.
As a result, the electrical signal generated by the force detection unit of the second force detection chip 400 is transmitted through both the positive and negative stacked through-hole electrodes penetrating the first force detection chip 500 and the circuit chip 600. Provided to the circuit portion 622 of the circuit chip 600.

  The first force detection chip 500 and the second force detection chip 400 include force detection units having different sensitivities. For example, if the first force detection chip 500 has high sensitivity and the second force detection chip 400 has low sensitivity, the first force detection chip 500 detects a small force with fine resolution and the second force detection chip 400. Can detect large forces with coarse resolution.

(Third embodiment)
FIG. 19 schematically shows a longitudinal sectional view of the force detection device 6 in which through-hole electrodes 724 and 726 are provided on the semiconductor circuit substrate 720 of the circuit chip 700. Note that the force detection device 6 uses the force detection chip 10 of the first embodiment. In addition, when the last two digits of the reference numerals attached to each drawing are the same as the last two digits of the above-described embodiment, it is a component having the same function and will not be described below.
The semiconductor circuit substrate 720 of the circuit chip 700 is provided with three through-hole electrodes 724 and 726 (only two are shown in the longitudinal sectional view of FIG. One is provided). These through-hole electrodes 724 and 726 correspond to the positive terminal of the power source, the negative terminal of the power source, and the output terminal.

  The force detection device 6 having this configuration is mounted on the housing 800. As shown in FIG. 20, the housing 800 includes a threaded portion 828 that is screwed onto the outer wall 18 of the hydraulic pipe, a hexagonal bolt portion 826, and three leads 822 and 824 extending in the axial direction (see FIG. 20). In the longitudinal sectional view of FIG. 20, only two are shown, but the other longitudinal section is provided with the remaining one). The housing 800 is installed in a through hole that penetrates the outer wall 18 of the hydraulic pipe via a screw portion 828. The force detection device 6 is installed on one mounting surface of the housing 800, and the leads 822 and 824 are electrically connected to the through-hole electrodes 724 and 726 of the force detection device 6.

  When the through-hole electrodes 724 and 726 are provided on the semiconductor circuit substrate 720 of the circuit chip 700 as in the force detection device 6, it can be electrically connected to the housing 800 without using a wire or the like. Therefore, the force detection device 6 mounted on the housing 800 is resistant to vibration and has high reliability.

(Fourth embodiment)
FIG. 21 shows a pressure sensor 7 for schematically explaining features of the technology disclosed in this specification. The pressure sensor 7 includes a circuit chip 920 and three force detection chips 911, 912, and 913. The sensitivity of the force detection units provided in the three force detection chips 911, 912, and 913 is different.

  For example, each of the force detection chips 911, 912, and 913 has different sensitivities by several times. The positional relationship of the through electrodes of the force detection chips 911, 912, and 913 is arranged in accordance with the common standard. For this reason, as shown in FIG. 21, force detection chips 911, 912, and 913 having the necessary sensitivity are selected according to the measurement target, and the selected force detection chips 911, 912, and 913 are joined to the circuit chip 920. Thus, the pressure sensor 7 that detects the measurement object with various sensitivities can be easily constructed.

  FIG. 22 shows a pressure sensor 8 of another embodiment. The pressure sensor 8 includes a force detection chip 911, an amplifier circuit chip 921 in which an amplifier circuit is built, a filter circuit chip 922 in which a filter circuit is built, and an A / D conversion circuit. An A / D conversion circuit chip 923 is provided. The positional relationship among the through electrodes of the amplifier circuit chip 921, the filter circuit chip 922, and the A / D conversion circuit chip 923 is arranged in accordance with the common standard.

  In this way, by configuring the circuit chips 921, 922, and 923 with a common standard for each function, the necessary circuit chips 921, 922, and 923 are selected according to the operation to be processed, and the selected circuit chips 921, 922 are selected. , 923 can be joined together to construct the pressure sensor 8. For example, when it is desired to perform other arithmetic processing, a pressure sensor that realizes necessary arithmetic processing can be easily constructed by preparing a circuit chip that realizes the function and joining the circuit chips. .

Specific examples of the present invention have been described above in detail, but these are merely examples and do not limit the scope of the claims. The technology described in the claims includes various modifications and changes of the specific examples illustrated above.
For example, in the embodiments of FIGS. 17 and 21, a force detection device or a force detection sensor constituted by a plurality of types of force detection chips having different sensitivities has been described. This technical idea is also useful for a composite detection device or sensor that uses different physical quantities as detection targets. For example, if a force detection chip whose pressure is a detection target and a force detection chip whose acceleration is a detection target are used, a composite detection device or sensor that measures pressure and acceleration simultaneously can be obtained.
In the present embodiment, the description has been made focusing on the technology for converting the force acting on the mesa step into an electric signal. However, the scope of application of the technology disclosed in this specification is not limited to mesa steps. For example, a force detection device or force detection that measures the amount of displacement of a mass by an acting acceleration or angular velocity (in this specification, acceleration and angular velocity are equivalent to force) and detects the acting acceleration or angular velocity. Sensors are also included within the scope of the technology herein. Or the force detection apparatus or force detection sensor which detects temperature using the temperature dependence of a force detection chip | tip is also contained in the category of the technique of this specification.
Further, the technical elements described in the present specification or drawings exhibit technical usefulness alone or in various combinations, and are not limited to the combinations described in the claims at the time of filing. In addition, the technology exemplified in this specification or the drawings can achieve a plurality of objects at the same time, and has technical usefulness by achieving one of the objects.

The perspective view of the force detection measure of 1st Example is typically shown. The disassembled perspective view of the force detection chip | tip of 1st Example is shown. FIG. 3 is a longitudinal sectional view taken along line III-III in FIG. 2. The longitudinal cross-sectional view of the IV-IV line of FIG. 2 is shown. An example of the stage before performing anodic bonding is shown. Another example of the stage before performing anodic bonding is shown. An example of the stage after performing anodic bonding is shown. The disassembled perspective view of the circuit chip of 1st Example is shown. The longitudinal cross-sectional view corresponding to the IX-IX line of FIG. 1 is shown. The perspective view of the pressure sensor of 1st Example is typically shown. An example in which the force detection device of the first embodiment is mounted on a hermetic seal terminal is shown. The disassembled perspective view of the other force detection chip | tip of 1st Example is shown. The longitudinal cross-sectional view of the XIII-XIII line | wire of FIG. 12 is shown. The disassembled perspective view of the other circuit chip of 1st Example is shown. The longitudinal cross-sectional view of the other force detection apparatus of 1st Example is shown. The perspective view of the other pressure sensor of 1st Example is typically shown. The longitudinal cross-sectional view of the force detection apparatus of 2nd Example is shown typically. The top view of the force detection apparatus of 2nd Example is shown typically. The longitudinal cross-sectional view of the force detection apparatus of 3rd Example is shown typically. The longitudinal cross-sectional view of the module of 3rd Example is typically shown. The longitudinal cross-sectional view of the pressure sensor of 4th Example is typically shown. The longitudinal cross-sectional view of the other pressure sensor of 4th Example is typically shown.

Explanation of symbols

10, 100, 400, 500, 911, 912, 913: Force detection chip 200, 300, 600, 700, 920, 921, 922, 923: Circuit chip 20, 120, 420, 520: Semiconductor substrate 60, 160: Force Detection unit 222, 322, 622, 722: circuit unit 50, 150, 550: first block 450: second block 250, 350, 650, 750: circuit block 220, 320, 620, 720: semiconductor circuit substrate 52, 54, 152, 552, 554: first through electrode 452, 454: second through electrode 252, 254, 352, 652, 752, 754: circuit through electrode

Claims (9)

A force sensing device,
A semiconductor substrate provided on the surface with a force detection unit that generates an electrical signal corresponding to the acting force;
A semiconductor circuit board provided on the surface with a circuit portion for processing the electrical signal;
An insulating block provided between the surface of the semiconductor substrate and the surface of the semiconductor circuit substrate,
The block has a through electrode extending from a surface in contact with the semiconductor substrate to a surface in contact with the semiconductor circuit substrate,
The through electrode is a force detection device that provides an electric signal of the force detection unit to the circuit unit. The force detection unit has a mesa step that crosses a groove provided on the surface of the semiconductor substrate, and an impurity introduction region that extends through the mesa step and extends the surface of the semiconductor substrate.
The block seals the groove in contact with at least one surface of the semiconductor substrate located at the periphery of the groove and one end of the impurity introduction region,
The force detection device according to claim 1, wherein the through electrode electrically connects one end of the impurity introduction region and the circuit portion. The block has a recess on the surface in contact with the semiconductor circuit board,
The force detection device according to claim 1, wherein a circuit portion is disposed in the recess. A force detection device in which a force detection chip and a circuit chip are laminated,
The force detection chip
A first semiconductor substrate having a first force detector for generating an electric signal corresponding to the acting force, provided on the surface, and the opposite side from the surface in contact with the surface of the first semiconductor substrate and in contact with the first semiconductor substrate An insulating first block having a first through electrode extending to the surface of
Circuit chip
A semiconductor circuit board having a circuit portion for processing the electric signal provided on a surface thereof, and a circuit through electrode extending from the surface in contact with the semiconductor circuit board to the opposite surface while being bonded to the surface of the semiconductor circuit board; And having an insulating circuit block having
The first block of the force detection chip and the circuit block of the circuit chip are joined so that the first through electrode and the circuit through electrode are electrically connected,
The first through electrode and the through electrode for a circuit are force detection devices that provide an electric signal of the first force detection unit to the circuit unit. The first force detection unit includes a first mesa step that crosses a groove provided on the surface of the first semiconductor substrate, and a first impurity that passes through the first mesa step and extends on the surface of the first semiconductor substrate. And has an introduction area,
The first block seals the groove in contact with at least one surface of the first semiconductor substrate located around the groove and one end of the first impurity introduction region,
5. The force detection device according to claim 4, wherein the first through electrode and the circuit through electrode electrically connect one end of the first impurity introduction region and the circuit unit. The circuit block has a recess on the surface in contact with the semiconductor circuit board.
6. The force detection device according to claim 4, wherein a circuit portion is disposed in the recess. The second force detection chip further includes a second force detection chip,
A second semiconductor substrate having a second force detection unit for generating an electric signal corresponding to the acting force, provided on the surface, and the opposite side from the surface in contact with the second semiconductor substrate while being bonded to the surface of the second semiconductor substrate An insulating second block having a second through electrode extending to the surface of
The first semiconductor substrate, the first block, and the circuit block are provided with inter-laminate through electrodes that extend between these laminates,
The first semiconductor substrate and the second block are joined so that the second through electrode and the inter-stack through electrode are electrically connected,
The second through electrode and the inter-layer through electrode provide an electric signal of the second force detection unit to the circuit unit,
The force detection device according to any one of claims 4 to 6, wherein the first force detection unit and the second force detection unit differ in the amount of change in the electrical signal with respect to the acting force. The second force detector includes a second mesa step that crosses a groove provided on the surface of the second semiconductor substrate, and a second impurity that passes through the second mesa step and extends on the surface of the second semiconductor substrate. And has an introduction area,
The second block seals the groove in contact with at least the surface of the second semiconductor substrate located around the groove and one end of the second impurity introduction region,
The force detection device according to claim 7, wherein the second through electrode and the inter-stack through electrode electrically connect one end of the second impurity introduction region and the circuit unit. The second force detection chip further includes a second force detection chip,
A second semiconductor substrate having a second force detection unit for generating an electric signal corresponding to the acting force, provided on the surface, and the opposite side from the surface in contact with the second semiconductor substrate while being bonded to the surface of the second semiconductor substrate An insulating second block having a second through electrode extending to the surface of
The first semiconductor substrate, the first block, and the circuit block are provided with inter-laminate through electrodes that extend between these laminates,
The first semiconductor substrate and the second block are joined so that the second through electrode and the inter-stack through electrode are electrically connected,
The second through electrode and the inter-layer through electrode provide an electric signal of the second force detection unit to the circuit unit,
The force detection device according to claim 4, wherein the first force detection unit and the second force detection unit have different physical quantities as detection targets.

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