JP2008277599A5 - - Google Patents
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- JP2008277599A5 JP2008277599A5 JP2007120554A JP2007120554A JP2008277599A5 JP 2008277599 A5 JP2008277599 A5 JP 2008277599A5 JP 2007120554 A JP2007120554 A JP 2007120554A JP 2007120554 A JP2007120554 A JP 2007120554A JP 2008277599 A5 JP2008277599 A5 JP 2008277599A5
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- Prior art keywords
- surface layer
- layer portion
- laser beam
- pulse laser
- pulsed laser
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- 239000002344 surface layer Substances 0.000 claims 26
- 238000010438 heat treatment Methods 0.000 claims 25
- 239000004065 semiconductor Substances 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 230000001678 irradiating Effects 0.000 claims 5
- 238000005224 laser annealing Methods 0.000 claims 5
- 239000012535 impurity Substances 0.000 claims 4
- 150000002500 ions Chemical class 0.000 claims 4
- 238000000137 annealing Methods 0.000 claims 2
- 230000003287 optical Effects 0.000 claims 2
- 230000002194 synthesizing Effects 0.000 claims 2
- YDLQKLWVKKFPII-UHFFFAOYSA-N Timiperone Chemical compound C1=CC(F)=CC=C1C(=O)CCCN1CCC(N2C(NC3=CC=CC=C32)=S)CC1 YDLQKLWVKKFPII-UHFFFAOYSA-N 0.000 claims 1
- 229950000809 timiperone Drugs 0.000 claims 1
Claims (8)
前記表層部が溶融しない条件で前記表層部に前記パルスレーザ光を照射し、
前記パルスレーザ光の各照射開始時から少なくとも１マイクロ秒が経過するまでの間、補助加熱手段により前記表層部を８００℃以上に加熱することを特徴とする半導体装置の作製方法。 A method for manufacturing a semiconductor device in which a surface layer portion into which ions as impurities of a semiconductor substrate are implanted is irradiated with a pulse laser beam and annealed ,
Irradiating the pulsed laser beam on the surface layer portion before Symbol condition the surface layer portion does not melt,
Between before SL at each start of the irradiation of the pulsed laser light to at least 1 micro seconds have elapsed, the method for manufacturing a semiconductor device comprising the Turkey to heat said surface layer portion above 800 ° C. by the auxiliary heating means.
Ｎ（Ｎは２以上の自然数）個のパルスレーザ発振器からパルスレーザ光を発振し、
各パルスレーザ発振器からのパルスレーザ光を同一光路上に合成し、
ｎ（ｎは０を除くＮ未満の自然数）番目のパルスレーザ発振器によるパルスレーザ光の発振から所定の時間差で（ｎ＋１）番目のパルスレーザ発振器からパルスレーザ光を発振して、前記表層部が溶融しない条件で前記表層部に前記パルスレーザ光を順次照射し、
前記パルスレーザ光の各照射開始時から少なくとも１マイクロ秒が経過するまでの間、補助加熱手段により前記表層部を８００℃以上に加熱し、
前記所定の時間差は、ｎ番目のパルスレーザ発振器からのパルスレーザ光の照射によって加熱された前記表層部の温度が、前記補助加熱手段による前記表層部の加熱の温度まで低下しない時間であることを特徴とする半導体装置の作製方法。 A method for manufacturing a semiconductor device in which a surface layer portion into which ions as impurities of a semiconductor substrate are implanted is irradiated with a pulse laser beam and annealed,
N (N is a natural number of 2 or more) pulse laser oscillators oscillate pulse laser light,
Combining the pulse laser light from each pulse laser oscillator on the same optical path,
The surface layer is melted by oscillating the pulse laser beam from the (n + 1) th pulse laser oscillator at a predetermined time difference from the oscillation of the pulse laser beam by the nth (n is a natural number less than N excluding 0) th pulse laser oscillator. the pulsed laser beam sequentially irradiates the surface layer portion in non conditions,
Until at least 1 micro seconds have elapsed from the start of irradiation time of the pulsed laser beam, the surface layer portion heated above 800 ° C. by the auxiliary heating means,
Difference the predetermined time, and this temperature of the surface layer portion heated by irradiation of the pulsed laser beam from the n-th pulse laser oscillator is between time does not decrease until the temperature of the heating of the surface layer portion by the auxiliary heating means A method for manufacturing a semiconductor device .
前記補助加熱手段は、間欠的に加熱を行なうものであり、加熱時の一回あたりの加熱時間が前記パルスレーザ光のパルス間隔の複数回分に相当するものであることを特徴とする半導体装置の作製方法。 In claim 1 or claim 2,
The auxiliary heating means performs heating intermittently, and the heating time per heating is equivalent to a plurality of pulse intervals of the pulse laser light . Manufacturing method.
前記補助加熱手段による前記表層部の加熱温度は６００℃以下であることを特徴とする半導体装置の作製方法。 In any one of Claims 1 thru | or 3,
The method for manufacturing a semiconductor device, wherein the heating temperature of the surface layer portion by the auxiliary heating means is 600 ° C. or lower.
前記パルスレーザ光を発振するパルスレーザ発振器を有し、前記パルスレーザ光を前記表層部に照射するレーザ照射装置と、
前記半導体基板の前記表層部を加熱する補助加熱手段と、を備え、
前記パルスレーザ発振器からパルスレーザ光を発振して、前記表層部が溶融しない条件で前記表層部に前記パルスレーザ光を照射し、前記パルスレーザ光の各照射開始時から少なくとも１マイクロ秒が経過するまでの間、補助加熱手段により前記表層部を８００℃以上に加熱することを特徴とするレーザアニール装置。 A laser annealing apparatus for annealing by irradiating a surface layer portion into which ions as impurities of a semiconductor substrate are implanted with pulsed laser light,
Has a pulse laser oscillator that oscillates the pulsed laser beam, a laser irradiation device for irradiating the pulsed laser beam on the surface layer portion,
An auxiliary heating means for heating the surface layer portion of the semiconductor substrate,
Oscillating a pulsed laser beam from the pulsed laser oscillator, the pulse laser beam is irradiated, before Symbol least 1 microsecond elapsed from the time of the start of irradiation of pulsed laser light to the surface layer portion under the condition in which the surface layer portion does not melt In the meantime, the surface layer portion is heated to 800 ° C. or higher by auxiliary heating means.
前記パルスレーザ光を発振するＮ（Ｎは２以上の自然数）個のパルスレーザ発振器と該各パルスレーザ発振器からのパルスレーザ光を同一光路上に合成する合成手段とを有し前記パルスレーザ光を前記表層部に照射するレーザ照射装置と、
前記半導体基板の表層部を加熱する補助加熱手段と、を備え、
ｎ（ｎは０を除くＮ未満の自然数）番目のパルスレーザ発振器によるパルスレーザ光の発振から所定の時間差で（ｎ＋１）番目のパルスレーザ発振器からパルスレーザ光を発振して、前記表層部が溶融しない条件で前記表層部に前記パルスレーザ光を順次照射し、
前記パルスレーザ光の各照射開始時から少なくとも１マイクロ秒が経過するまでの間、前記補助加熱手段により前記表層部を８００℃以上に加熱し、
前記所定の時間差を、ｎ番目のパルスレーザ発振器からのパルスレーザ光の照射によって加熱された前記表層部の温度が、前記補助加熱手段による前記表層部の加熱の温度まで低下しない時間差とすることを特徴とするレーザアニール装置。 A laser annealing apparatus for annealing by irradiating a surface layer portion into which ions as impurities of a semiconductor substrate are implanted with pulsed laser light,
The pulsed laser beam and a synthesizing means for synthesizing the same optical path the pulsed laser beam from the N (N is a natural number of 2 or more) pieces of pulse laser oscillator and respective pulse laser which emits the pulsed laser beam A laser irradiation device for irradiating the surface layer part;
An auxiliary heating means for heating the surface layer portion of the semiconductor substrate,
The surface layer is melted by oscillating the pulse laser beam from the (n + 1) th pulse laser oscillator at a predetermined time difference from the oscillation of the pulse laser beam by the nth (n is a natural number less than N excluding 0) th pulse laser oscillator. the pulsed laser beam sequentially irradiates the surface layer portion in non conditions,
Until at least 1 micro seconds have elapsed from the start of irradiation time of the pulsed laser beam, heating the surface layer portion above 800 ° C. by the auxiliary heating means,
Said predetermined time difference, n-th temperature of the surface layer portion heated by irradiation of the pulsed laser beam from the pulsed laser oscillator, the auxiliary time difference does not decrease until the temperature of the heating of the surface layer portion by the heating means and to Turkey Laser annealing equipment characterized by the above.
前記補助加熱手段は、間欠的に加熱を行なうものであり、加熱時の一回あたりの加熱時間が前記パルスレーザ光のパルス間隔の複数回分に相当するものであることを特徴とするレーザアニール装置。 In claim 5 or claim 6,
The auxiliary heating means is for performing intermittent heating, laser annealing apparatus, wherein the heating time per one time during heating corresponds to the plurality of times of the pulse interval of the pulse laser light .
前記補助加熱手段による前記表層部の加熱温度を６００℃以下とすることを特徴とするレーザアニール装置。 In any one of Claim 5 thru | or 7,
The laser annealing apparatus characterized in that the heating temperature of the surface layer portion by the auxiliary heating means is 600 ° C. or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007120554A JP5178046B2 (en) | 2007-05-01 | 2007-05-01 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007120554A JP5178046B2 (en) | 2007-05-01 | 2007-05-01 | Method for manufacturing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008277599A JP2008277599A (en) | 2008-11-13 |
| JP2008277599A5 true JP2008277599A5 (en) | 2010-05-27 |
| JP5178046B2 JP5178046B2 (en) | 2013-04-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007120554A Expired - Fee Related JP5178046B2 (en) | 2007-05-01 | 2007-05-01 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5178046B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5828998B2 (en) * | 2009-02-18 | 2015-12-09 | 株式会社Ｓｃｒｅｅｎホールディングス | Manufacturing method of semiconductor device |
| US8461033B2 (en) | 2009-01-13 | 2013-06-11 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus and method for heating substrate by light-irradiation |
| JP5828997B2 (en) * | 2009-01-13 | 2015-12-09 | 株式会社Ｓｃｒｅｅｎホールディングス | Heat treatment method and heat treatment apparatus |
| JP2011071261A (en) * | 2009-09-25 | 2011-04-07 | Ushio Inc | Laser annealing apparatus |
| JP5556431B2 (en) * | 2010-06-24 | 2014-07-23 | 富士電機株式会社 | Manufacturing method of semiconductor device |
| JP5595152B2 (en) * | 2010-07-14 | 2014-09-24 | 住友重機械工業株式会社 | Laser annealing method |
| JP5786557B2 (en) * | 2011-08-25 | 2015-09-30 | 株式会社Sumco | Prediction method of dislocations generated from oxygen precipitates generated during laser spike annealing by simulation |
| CN116913768B (en) * | 2023-09-14 | 2023-12-05 | 中国科学院半导体研究所 | Multiple pulse sub-melting excimer laser annealing method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3065825B2 (en) * | 1992-10-21 | 2000-07-17 | 株式会社半導体エネルギー研究所 | Laser treatment method |
| JPH07335586A (en) * | 1994-04-13 | 1995-12-22 | Toshiba Corp | Method and apparatus for laser heat treatment |
| WO2001071787A1 (en) * | 2000-03-17 | 2001-09-27 | Varian Semiconductor Equipment Associates, Inc. | Method of forming ultrashallow junctions by laser annealing and rapid thermal annealing |
| JP4207488B2 (en) * | 2002-08-02 | 2009-01-14 | ウシオ電機株式会社 | Light heating device |
| JP2005167005A (en) * | 2003-12-03 | 2005-06-23 | Semiconductor Leading Edge Technologies Inc | Heat treatment method of semiconductor substrate, manufacturing method of semiconductor device and heat treatment device |
| JP4614747B2 (en) * | 2004-11-30 | 2011-01-19 | 住友重機械工業株式会社 | Manufacturing method of semiconductor device |
| US7943534B2 (en) * | 2005-08-03 | 2011-05-17 | Phoeton Corp. | Semiconductor device manufacturing method and semiconductor device manufacturing system |
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2007
- 2007-05-01 JP JP2007120554A patent/JP5178046B2/en not_active Expired - Fee Related
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