JP2008277567A - Semiconductor manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device which reflects radiant heat toward the inside a furnace and prevents heat from escaping to the outside of a heater region. <P>SOLUTION: A semiconductor heat treatment apparatus for executing an annealing process in a lateral furnace comprises: a reaction pipe 3 for which a gas injection port 5 is provided on one end and a sealing lid 7 using an O ring 6 is attached to the other end; a heater coil 8 wound around the heat treatment reaction portion of the reaction pipe 3; a gold pipe 4 which covers the reaction pipe 3 at the portion of a heater unit 9 around which the heater coil 8 is wound, and whose inside is coated with gold; and a gold coated buffer plate 12 whose surface is coated with the gold. The gold coated buffer plate 12 is disposed at one end of the portion of the heater unit 9 to prevent the leakage of the radiant heat inside the reaction pipe 3. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor manufacturing apparatus that performs semiconductor heat treatment using a horizontal annealing furnace.

  Conventionally, in this type of semiconductor manufacturing apparatus, when performing semiconductor heat treatment through an annealing process in a horizontal furnace, in order to increase the wafer layout area and the number of wafers to be processed, a soaking area where the temperature is kept constant is higher than that of the vertical furnace. It is also necessary to take widely.

  In general, in order to make this soaking area wide, it is necessary to suppress the escape of heat generated from the heater part. Conventionally, as a means for this, a quartz buffer plate is used at the boundary of the heater region of the process tube constituting the horizontal furnace. It was attached.

  However, as shown in the perspective view (A), front view (B), and side view (C) of FIG. 3, the conventional quartz buffer plate has a shape inside the furnace on the surface of the buffer support plate 1. For example, it has a simple configuration in which only a circular quartz buffer plate 2 is installed.

  Therefore, in this conventional quartz buffer plate 2, since infrared rays are transmitted, heat escapes out of the heater region, and as a result, the thermal uniformity in the wafer placement region is lowered, and the electric power of the resulting wafer is reduced. There was a problem that the characteristics varied greatly.

  Further, the heat escape to the outside of the heater region increases the temperature of the components constituting the annealing furnace outside the heater region, for example, the O-ring for sealing the reaction tube, thereby leading to the early deterioration of the annealing furnace. It was also a cause of failure.

  Accordingly, an object of the present invention is to provide a semiconductor manufacturing apparatus using a buffer plate that reflects radiant heat to the inside of the furnace and prevents the heat from escaping outside the heater region.

  A semiconductor manufacturing apparatus of the present invention includes a horizontal reaction tube having a gas inlet at one end and a sealing lid provided at the other end, a heater coil wound around the reaction tube, and the heater coil Is placed inside the horizontal reaction tube, and is disposed at the end of the horizontal reaction tube on which the sealing lid is provided. A gold coat buffer plate that reflects radiant heat to the inside is provided.

  In the semiconductor manufacturing apparatus of the present invention, the gold coat buffer plate is housed in a sealed container composed of two quartz buffer plates.

  According to the present invention, since a gold-coated gold-coated buffer plate is used as a buffer plate that does not release radiant heat, radiant heat is transmitted only in the heater region portion, that is, the heater unit portion of the reaction tube without transmitting infrared rays. As a result, it is possible to uniformly heat a plurality of wafers. As a result, there is no variation in the electrical characteristics of the wafers, the yield of the semiconductor is remarkably improved, and heat is not easily released except for the heater unit portion. Therefore, parts made of heat-sensitive materials, in particular, O-rings are not heated and deteriorated, the reliability of the apparatus is increased, and the economic effect is great.

  Further, according to the present invention, the improvement of the reliability of the O-ring prevents impurities generated during the heat treatment process of the wafer and toxic arsenic gas from being scattered outside the furnace, so that safety and environmental pollution can be prevented. Can also have a great effect.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 is an explanatory diagram showing a cross section of the entire horizontal annealing furnace of the present invention, and covers a tube-shaped horizontal reaction tube 3 made of quartz and a substantially central portion of the reaction tube 3. Is composed of a gold tube 4 coated with gold.

  Among these, a gas inlet 5 is provided at the left end (relative to the drawing) of the reaction tube 3.

  Further, a lid 7 using an O-ring 6 is attached to the right end (relative to the drawing) of the reaction tube 3 so that the injected gas is sealed in the reaction tube 3. The lid 7 is provided with an exhaust port 7-1.

  On the other hand, a heater coil 8 is wound around a portion of the reaction tube 3 covered with the gold tube 4, and a heater unit 9 which is a heater region is formed as indicated by a dotted line.

  A plurality of wafers 11 placed on a wafer loading boat 10 are installed inside the reaction tube 3 of the heater unit 9 portion, and the right end portion of the heater unit 9 (relative to the drawing). A gold coat buffer plate 12 according to the present invention is attached to the sealing port of the reaction tube 3 located in a state in which the inside of the reaction tube 3 is sealed.

  FIG. 2 is a cross-sectional view showing the structure of a gold coat buffer plate according to the present invention. This gold coat buffer plate 12 includes a gold coat plate 13 in which a surface of a metal, for example, disc-shaped silicon (Si) is gold coated. It is sandwiched between two quartz buffer plates 14A and 14B, vacuum sealed to prevent deterioration of the gold coating portion, and its lower surface portion is fixedly installed on a buffer support plate 15 made of quartz. . That is, the two quartz buffer plates 14A and 14B constitute a sealed container that houses the gold coat plate 13 therein.

  In a horizontal annealing furnace having such a gold coat buffer plate 12 mounted thereon, a plurality of wafers 11 are placed on the wafer loading boat 10 and the plurality of wafers 11 are inserted from the right end (relative to the drawing) of the reaction tube 3. Install the heater unit 9 part. An n-type or p-type impurity is implanted into the wafer 11 by ion implantation (implantation).

  After the wafer 11 is placed, the gold coat buffer plate 12 according to the present invention is placed on the exhaust port side of the reaction tube 3 located at the right end (with respect to the drawing) of the heater unit 9, and then the right end of the reaction tube 3 is placed. (With respect to the drawing) is closed with a lid 7 by an O-ring 6. Next, a gas having a predetermined pressure is introduced from the gas inlet 5 in order to prevent scattering of constituent elements from the wafer 11 during the heat treatment. For example, when the wafer 11 is made of a compound semiconductor such as gallium arsenide (GaAs), the constituent element arsenic (As) may be scattered in the reaction tube 3 during the heat treatment in the reaction tube 3. Then, As gas is introduced into the reaction tube 3 from the gas inlet 5, and the reaction tube 3 is filled with As gas at a predetermined pressure. In this state, the heater 11 is energized to heat the wafer 11.

  In this case, in the reaction tube 3 of the heater unit 9 portion where the wafer 11 is installed, the generated radiant heat is reflected by the gold coat coated on the inner surface of the gold tube 4 and does not pass outside the reaction tube 3. . Further, since the open end of the reaction tube 3 of the heater unit 9 is shielded by the gold coat buffer plate 12, heat is reflected by the gold coat portion, and radiant heat is confined only within the reaction tube 3 of the heater unit 9 portion. As a result, the plurality of wafers 11 can be uniformly heated.

  In addition, since the heat leakage to portions other than the heater unit 9 portion of the reaction tube 3 is small, the O-ring 6 of the sealing lid 7 that seals the reaction tube 3 is not overheated and deteriorated. Therefore, not only the reliability of the apparatus is improved, but also the As forming the semiconductor substrate does not leak out of the reactor during the heat treatment of the compound semiconductor containing GaAs like a high-frequency semiconductor wafer, and the safety. It also has a great effect in preventing environmental pollution.

1 is an explanatory diagram showing a cross section of an entire horizontal annealing furnace according to the present invention. It is sectional drawing which showed the structure of the gold coat buffer board by this invention. It is explanatory drawing which shows the conventional quartz buffer board, (A) is a perspective view, (B) is a front view, (C) is a side view.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,15 Buffer support plate 2,14A, 14B Quartz buffer plate 3 Reaction tube 4 Gold tube 5 Gas inlet 6 O-ring 7 Sealing lid 8 Heater coil 9 Heater unit 10 Wafer mounting board 11 Wafer 12 Gold coat buffer plate 13 Gold coated board

Claims (2)

  A horizontal reaction tube having a gas inlet at one end and a sealing lid provided at the other end, a heater coil wound around the reaction tube, and a reaction tube wound with the heater coil A gold tube that is housed inside and coated with gold on the inner surface, and a gold coat that is disposed at the end of the horizontal reaction tube on which the sealing lid is provided and reflects the radiant heat inside the horizontal reaction tube A semiconductor manufacturing apparatus comprising a buffer plate.   2. The semiconductor manufacturing apparatus according to claim 1, wherein the gold coat buffer plate is accommodated in a sealed container made of two quartz buffer plates.

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