JP2008277346A - Optical semiconductor device - Google Patents
Optical semiconductor device Download PDFInfo
- Publication number
- JP2008277346A JP2008277346A JP2007115977A JP2007115977A JP2008277346A JP 2008277346 A JP2008277346 A JP 2008277346A JP 2007115977 A JP2007115977 A JP 2007115977A JP 2007115977 A JP2007115977 A JP 2007115977A JP 2008277346 A JP2008277346 A JP 2008277346A
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- JP
- Japan
- Prior art keywords
- optical semiconductor
- semiconductor device
- light
- laser
- housing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000003287 optical effect Effects 0.000 title claims abstract description 70
- 239000004065 semiconductor Substances 0.000 title claims abstract description 70
- 229920005989 resin Polymers 0.000 claims abstract description 29
- 239000011347 resin Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 18
- 230000005540 biological transmission Effects 0.000 claims abstract description 17
- 238000003466 welding Methods 0.000 claims description 51
- 239000011521 glass Substances 0.000 claims description 10
- 230000004308 accommodation Effects 0.000 abstract description 9
- 238000000034 method Methods 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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- B29C65/78—Means for handling the parts to be joined, e.g. for making containers or hollow articles, e.g. means for handling sheets, plates, web-like materials, tubular articles, hollow articles or elements to be joined therewith; Means for discharging the joined articles from the joining apparatus
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- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract
Description
本発明は、光半導体デバイスに関する。 The present invention relates to an optical semiconductor device.
光半導体デバイスについては、低コスト化を図るために、光半導体素子が収容されるパッケージを樹脂により形成することが求められている。パッケージを樹脂により形成する技術としては、カップ状の本体部材に蓋部材をレーザ溶着する技術が知られている(例えば、特許文献1〜4参照)。
ところで、光半導体デバイスにおいては、光半導体素子が発光又は受光する光を略透過する光透過部材を樹脂製のパッケージに設ける必要がある。しかしながら、光透過部材の材質に拘わらず光透過部材を樹脂製のパッケージに確実に設けるための有効な技術は開発されていない。 By the way, in an optical semiconductor device, it is necessary to provide a light-transmitting member that substantially transmits light emitted or received by an optical semiconductor element in a resin package. However, no effective technique has been developed for reliably providing the light transmissive member on the resin package regardless of the material of the light transmissive member.
そこで、本発明は、このような事情に鑑みてなされたものであり、光透過部材の材質に拘わらず光透過部材を樹脂製のパッケージに確実に設けることができる光半導体デバイスを提供することを目的とする。 Therefore, the present invention has been made in view of such circumstances, and provides an optical semiconductor device capable of reliably providing a light transmitting member in a resin package regardless of the material of the light transmitting member. Objective.
上記目的を達成するために、本発明に係る光半導体デバイスは、光を発光又は受光する光半導体素子と、光半導体素子が収容される収容空間を有する収容部材と、収容空間の開口部を覆い、光を略透過する光透過部材と、収容部材とで光透過部材を挟持する挟持部材と、を備え、収容部材と挟持部材とは、樹脂により形成され、互いにレーザ溶着されていることを特徴とする。 To achieve the above object, an optical semiconductor device according to the present invention covers an optical semiconductor element that emits or receives light, an accommodation member having an accommodation space in which the optical semiconductor element is accommodated, and an opening of the accommodation space. A light transmitting member that substantially transmits light, and a holding member that holds the light transmitting member between the housing member, the housing member and the holding member being formed of resin and laser-welded to each other. And
この光半導体デバイスでは、光半導体素子が収容されるパッケージの少なくとも一部を構成する収容部材と挟持部材とが、樹脂により形成されており、光半導体素子が発光又は受光する光を略透過する光透過部材を挟持した状態で、互いにレーザ溶着されている。従って、この光半導体デバイスによれば、光透過部材の材質に拘わらず光透過部材を樹脂製のパッケージに確実に設けることができる。 In this optical semiconductor device, the housing member and the sandwiching member that constitute at least part of the package in which the optical semiconductor element is accommodated are formed of resin, and light that substantially transmits light emitted or received by the optical semiconductor element. Laser welding is performed with the transmission member sandwiched therebetween. Therefore, according to this optical semiconductor device, the light transmitting member can be reliably provided in the resin package regardless of the material of the light transmitting member.
本発明に係る光半導体デバイスにおいては、収容部材は、カップ状に形成されており、挟持部材は、環状に形成されていることが好ましい。これによれば、収容部材と挟持部材とで光透過部材の周縁部を挟持して、光透過部材が設けられたパッケージを構成することができる。 In the optical semiconductor device according to the present invention, the housing member is preferably formed in a cup shape, and the holding member is preferably formed in an annular shape. According to this, it is possible to configure a package provided with the light transmitting member by sandwiching the peripheral portion of the light transmitting member between the housing member and the holding member.
本発明に係る光半導体デバイスにおいては、挟持部材が、光透過部材が配置される凹部を有するか、或いは、収容部材が、光透過部材が配置される凹部を有することが好ましい。これらによれば、光半導体デバイスの小型化を図ることができる。 In the optical semiconductor device according to the present invention, it is preferable that the holding member has a recess in which the light transmission member is disposed, or the housing member has a recess in which the light transmission member is disposed. According to these, the optical semiconductor device can be miniaturized.
挟持部材が、光透過部材が配置される凹部を有する場合、挟持部材は、光透過部材が挟持される方向と略直交する方向において、光透過部材との間に隙間を有することが好ましい。一方、収容部材が、光透過部材が配置される凹部を有する場合、収容部材は、光透過部材が挟持される方向と略直交する方向において、光透過部材との間に隙間を有することが好ましい。これらによれば、収容部材と挟持部材とのレーザ溶着時に溶融樹脂が隙間に納まり得るため、溶融樹脂が収容空間に流れ込むのを防止しつつ、収容部材や挟持部材に光透過部材を強固に固定することができる。 When the holding member has a recess in which the light transmitting member is disposed, it is preferable that the holding member has a gap between the light transmitting member in a direction substantially orthogonal to the direction in which the light transmitting member is held. On the other hand, when the housing member has a recess in which the light transmissive member is disposed, the housing member preferably has a gap between the light transmissive member in a direction substantially perpendicular to the direction in which the light transmissive member is sandwiched. . According to these, since the molten resin can fit in the gap during laser welding of the housing member and the sandwiching member, the light transmitting member is firmly fixed to the housing member or the sandwiching member while preventing the molten resin from flowing into the housing space. can do.
本発明に係る光半導体デバイスにおいては、収容部材には、光透過部材が挟持される方向と略直交する方向において、挟持部材の移動を規制する規制部が設けられていることが好ましい。これによれば、収容部材に対する挟持部材の位置決めを容易化することができる。 In the optical semiconductor device according to the present invention, it is preferable that the accommodating member is provided with a restricting portion that restricts movement of the clamping member in a direction substantially orthogonal to the direction in which the light transmitting member is clamped. According to this, positioning of the clamping member with respect to the housing member can be facilitated.
本発明に係る光半導体デバイスにおいては、光透過部材は、ガラスにより形成されていることが好ましい。これによれば、収容部材と挟持部材とのレーザ溶着部における収容空間側には、樹脂に比べて放熱性の高いガラスにより形成された光透過部材が位置するため、収容部材と挟持部材とのレーザ溶着時に溶融樹脂が収容空間に流れ込むのを防止することができる。 In the optical semiconductor device according to the present invention, the light transmitting member is preferably formed of glass. According to this, since the light transmissive member formed of glass having higher heat dissipation than the resin is positioned on the accommodation space side in the laser welding portion between the accommodation member and the sandwiching member, the housing member and the sandwiching member It is possible to prevent the molten resin from flowing into the accommodation space at the time of laser welding.
本発明に係る光半導体デバイスにおいては、収容部材は、挟持部材とのレーザ溶着に使用されるレーザ光を略吸収する材料により形成されており、挟持部材は、レーザ光を略透過する材料により形成されていることが好ましい。これによれば、収容部材と挟持部材とのレーザ溶着時に、挟持部材を介して収容部材にレーザ光を照射することで、収容部材と挟持部材との接触部において両部材を溶融・再固化させて、収容部材と挟持部材とをレーザ溶着することができる。 In the optical semiconductor device according to the present invention, the housing member is formed of a material that substantially absorbs laser light used for laser welding with the holding member, and the holding member is formed of a material that substantially transmits laser light. It is preferable that According to this, at the time of laser welding between the housing member and the sandwiching member, both members are melted and re-solidified at the contact portion between the housing member and the sandwiching member by irradiating the housing member with laser light through the sandwiching member. Thus, the housing member and the clamping member can be laser-welded.
本発明に係る光半導体デバイスにおいては、収容部材と挟持部材とは、互いに離間する複数のレーザ溶着部において、互いにレーザ溶着されていることが好ましい。これによれば、例えば光半導体デバイスをリフロー半田付けで実装する場合に、リフロー炉において収容空間内の空気が膨張しても、収容部材と挟持部材とがレーザ溶着されていない部分から空気がリークし得るため、収容空間内の空気の膨張による光半導体デバイスの破損を防止することができる。 In the optical semiconductor device according to the present invention, it is preferable that the housing member and the holding member are laser-welded to each other at a plurality of laser welding portions that are separated from each other. According to this, for example, when an optical semiconductor device is mounted by reflow soldering, air leaks from a portion where the housing member and the clamping member are not laser-welded even if the air in the housing space expands in the reflow furnace. Therefore, it is possible to prevent the optical semiconductor device from being damaged due to the expansion of air in the accommodation space.
本発明によれば、光透過部材の材質に拘わらず光透過部材を樹脂製のパッケージに確実に設けることができる。 According to the present invention, the light transmitting member can be reliably provided in the resin package regardless of the material of the light transmitting member.
以下、本発明の好適な実施形態について、図面を参照して詳細に説明する。なお、各図において同一又は相当部分には同一符号を付し、重複する説明を省略する。 DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In addition, in each figure, the same code | symbol is attached | subjected to the same or an equivalent part, and the overlapping description is abbreviate | omitted.
図1は、本発明に係る光半導体デバイスの一実施形態の平面図であり、図2は、図1に示されたII−II線に沿っての断面図であり、図3は、図1に示された光半導体デバイスの分解斜視図である。図1〜3に示されるように、光半導体デバイス1は、PPS(ポリフェニレンサルファイド)、PPA(ポリフタルアミド)又はLCP(液晶ポリマー)等の樹脂により直方体カップ状(例えば、外形10mm×10mm、高さ2mm)に射出成形で形成された収容部材2を備えている。収容部材2は、断面四角形状の凹部(収容空間)3を有しており、凹部3には、光半導体素子5が収容されている。
1 is a plan view of an embodiment of an optical semiconductor device according to the present invention, FIG. 2 is a cross-sectional view taken along the line II-II shown in FIG. 1, and FIG. 2 is an exploded perspective view of the optical semiconductor device shown in FIG. As shown in FIGS. 1 to 3, the
光半導体素子5は、LED、LD等の発光素子、又は、CCDイメージセンサ、MOSイメージセンサ等の受光素子であって、凹部3の底面3aに設置されている。光半導体素子5は、収容部材2の側壁を貫通する複数の電気信号入出力端子6とワイヤ7によって電気的に接続されている。
The
収容部材2の一端面2aには、ガラスにより四角形薄板状(例えば、外形9mm×9mm、厚さ0.5mm)に形成された光透過部材8が配置されている。光透過部材8は、凹部3の開口部3bを覆い、光半導体素子5が発光又は受光する光を略透過する。このように、光半導体素子5が発光又は受光する光を略透過する光透過部材8をガラスにより形成することで、光透過部材8に傷が付くのを防止することができる。
On one
更に、収容部材2の一端面2aには、収容部材2と同種の樹脂により四角形環状(例えば、外形10mm×10mm、厚さ1mm)に射出成形で形成された挟持部材9が配置されている。挟持部材9は、光透過部材8が配置される断面四角形状の凹部11を有しており、凹部11の底面11aには、断面四角形状の光通過孔12が形成されている。このように、挟持部材9の凹部11に光透過部材8が配置されることで、光半導体デバイス1の小型化を図ることができる。
Further, a
以上のような構成により、光透過部材8は、その周縁部が収容部材2の一端面2aと挟持部材9の凹部11の底面11aとの間に挟み込まれ、収容部材2と挟持部材9とで挟持されることになる。
With the configuration as described above, the
また、収容部材2の一端面2aには、直方体突起状(例えば、外形0.5mm×1.5mm、高さ0.5mm)の規制部13が略四方に設けられている。挟持部材9の周縁部には、各規制部13が嵌合する切欠き14が形成されている。これにより、光透過部材8が挟持される方向(すなわち、光透過部材8の厚さ方向)と略直交する方向において、挟持部材9の移動が規制されるため、収容部材2に対する挟持部材9の位置決めを容易化することができる。
In addition, on one
収容部材2と挟持部材9とは、互いに離間する複数のレーザ溶着部Pにおいて、互いにレーザ溶着されている。収容部材2と挟持部材9とは同種の樹脂からなるが、収容部材2は、レーザ溶着用のレーザ光を略吸収する材料により形成されており、挟持部材9は、レーザ溶着用のレーザ光を略透過する材料により形成されている。
The
図4は、図1に示されたIV−IV線に沿っての部分断面図である。図4に示されるように、収容部材2と挟持部材9とのレーザ溶着時に、レーザ溶着部Pにレーザ溶着用のレーザ光Lが照射されると、レーザ光Lは、挟持部材9を略透過して収容部材2に略吸収される。これにより、収容部材2が一時発熱し、収容部材2と挟持部材9との接触部(図4におけるドット部分)において両部材が溶融・再固化するため、収容部材2と挟持部材9とがレーザ溶着される。
4 is a partial cross-sectional view taken along line IV-IV shown in FIG. As shown in FIG. 4, when the laser welding portion P is irradiated with laser light L for laser welding at the time of laser welding between the
このとき、レーザ溶着部Pにおける収容部材2の凹部3側には、樹脂に比べて放熱性の高いガラスにより形成された光透過部材8が位置している。これにより、収容部材2の一端面2aのうち、凹部3側の領域(光透過部材8と接触している領域)では、収容部材2がレーザ光Lを吸収して生じた発熱が好適に逃がされることとなる。従って、収容部材2の一端面2aのうち、凹部3側の領域が過剰に溶融することが防止され、収容部材2と挟持部材9とのレーザ溶着時に、溶融樹脂や、樹脂が溶融することにより発生したガスが凹部3に流れ込むのを防止することができる。また、挟持部材9は、光透過部材8が挟持される方向と略直交する方向において、光透過部材8との間に隙間Gを有している。これにより、収容部材2と挟持部材9とのレーザ溶着時に溶融樹脂が隙間Gに納まり得るため、溶融樹脂が凹部3に流れ込むのを防止しつつ、収容部材2や挟持部材9に光透過部材8を強固に固定することができる。しかも、光透過部材8が配置される凹部11の加工精度を緩和することができる。
At this time, the
以上説明したように、光半導体デバイス1では、光半導体素子5が収容されるパッケージを構成する収容部材2と挟持部材9とが、樹脂により形成されており、光半導体素子5が発光又は受光する光を略透過する光透過部材8を挟持した状態で、互いにレーザ溶着されている。従って、光半導体デバイス1によれば、接着剤等を使用しなくても、光透過部材8の材質に拘わらず光透過部材8を樹脂製のパッケージに確実に設けることができる。
As described above, in the
また、光半導体デバイス1においては、収容部材2がカップ状に形成されており、挟持部材9が環状に形成されている。これにより、収容部材2と挟持部材9とで光透過部材8の周縁部を挟持して、光透過部材8が設けられたパッケージを構成することができる。
Further, in the
更に、光半導体デバイス1においては、収容部材2と挟持部材9とが、互いに離間する複数のレーザ溶着部Pにおいて、互いにレーザ溶着されている。これにより、例えば光半導体デバイス1をリフロー半田付けで実装する場合に、リフロー炉において収容部材2の凹部3内の空気が膨張しても、収容部材2と挟持部材9とがレーザ溶着されていない部分から空気がリークし得るため、凹部3内の空気の膨張による光半導体デバイス1の破損を防止することができる。
Further, in the
次に、光半導体デバイス1の製造方法について説明する。図5は、レーザ溶着用治具の断面図であり、図6は、レーザ溶着用レーザ光照射装置の概略構成図である。
Next, a method for manufacturing the
図5に示されるように、収容部材2の凹部3の底面3aに光半導体素子5を設置した後、収容部材2の一端面2aに光透過部材8及び挟持部材9を配置して、組立体10を作製し、組立体10をレーザ溶着用治具20にセットする。レーザ溶着用治具20は、図5(a)に示されるように、組立体10を支持するベース21と、レーザ溶着用のレーザ光を略透過するガラス板22と、ベース21に対してガラス板22を移動させるエアシリンダ23と、を備えるものであってもよいし、図5(b)に示されるように、ベース21と、ガラス板22と、ベース21の凹部内に配置され、組立体10が載置される載置台24と、ベース21の凹部内に配置され、載置台24をガラス板22側に付勢するバネ25と、を備えるものであってもよい。
As shown in FIG. 5, after the
続いて、図6に示されるように、レーザ溶着用治具20にセットされて挟持部材9が収容部材2に押圧された状態で、レーザ溶着用レーザ光照射装置30によって、各レーザ溶着部Pにレーザ光Lを照射することで、収容部材2と挟持部材9とをレーザ溶着して、光半導体デバイス1を作製する。レーザ溶着用レーザ光照射装置30は、各レーザ溶着部Pと対向するように先端部が配置された光ファイバ31と、各光ファイバ31の先端部を保持するガラス枠32と、各光ファイバ31の基端部と光学的に接続され、レーザ光Lを出射するレーザダイオード33と、を備えている。
Subsequently, as shown in FIG. 6, each laser welding portion P is set by the laser welding laser
各レーザ溶着部Pにレーザ光Lを照射するに際しては、収容部材2と挟持部材9とが圧接させられている。これにより、各レーザ溶着部Pでは、収容部材2と挟持部材9とが圧接された状態で、双方が溶融することとなるため、より溶着強度を高くすることができる。また、挟持部材9の反り等の変形が抑制されるため、収容部材2と挟持部材9とを確実にレーザ溶着することができる。
When irradiating each laser welding portion P with the laser beam L, the
なお、レーザ溶着用治具20は、複数の組立体10を同時にセットすることができるように構成されていてもよく、また、レーザ溶着用レーザ光照射装置30は、複数の組立体10にレーザ溶着用のレーザ光Lを同時に照射することができるように構成されていてもよい。
The
本発明は、上述した実施形態に限定されるものではない。 The present invention is not limited to the embodiment described above.
図7は、本発明に係る光半導体デバイスの他の実施形態の分解斜視図である。図7に示されるように、挟持部材9に替わって、収容部材2が、光透過部材8が配置される断面四角形状の凹部4を有していてもよい。この場合、光半導体素子5が収容される凹部3は、凹部4の底面4aに形成されることになる。このように、収容部材2の凹部4に光透過部材8が配置される場合にも、光半導体デバイス1の小型化を図ることができる。
FIG. 7 is an exploded perspective view of another embodiment of the optical semiconductor device according to the present invention. As shown in FIG. 7, instead of the holding
図8は、図7に示された光半導体デバイスの部分断面図である(図1に示されたIV−IV線に沿っての部分断面図に相当する)。図8に示されるように、収容部材2は、光透過部材8が挟持される方向(すなわち、光透過部材8の厚さ方向)と略直交する方向において、光透過部材8との間に隙間Gを有している。これにより、収容部材2と挟持部材9とのレーザ溶着時に溶融樹脂が隙間Gに納まり得るため、溶融樹脂が収容部材2の凹部3に流れ込むのを防止しつつ、収容部材2や挟持部材9に光透過部材8を強固に固定することができる。しかも、光透過部材8が配置される凹部4の加工精度を緩和することができる。
FIG. 8 is a partial cross-sectional view of the optical semiconductor device shown in FIG. 7 (corresponding to a partial cross-sectional view along line IV-IV shown in FIG. 1). As shown in FIG. 8, the
また、上記実施形態では、収容部材2がレーザ溶着用のレーザ光を略吸収する材料により形成されており、挟持部材9がレーザ溶着用のレーザ光を略透過する材料により形成されていたが、これに限定されない。例えば、収容部材2がレーザ溶着用のレーザ光を略透過する材料により形成されており、挟持部材9がレーザ溶着用のレーザ光を略吸収する材料により形成されていてもよいし、或いは、収容部材2及び挟持部材9の両方がレーザ溶着用のレーザ光を略透過する材料により形成されていてもよい。後者の場合、収容部材2と挟持部材9との間にレーザ光吸収体を介在させてレーザ溶着用のレーザ光を照射すれば、収容部材2と挟持部材9とをレーザ溶着することができる。更に、収容部材2及び挟持部材9の両方がレーザ溶着用のレーザ光を略吸収する材料により形成されていてもよい。この場合、光透過部材8が挟持される方向と略直交する方向から、収容部材2と挟持部材9との接触部にレーザ溶着用のレーザ光を照射すれば、収容部材2と挟持部材9とをレーザ溶着することができる。
In the above embodiment, the
また、上記実施形態では、収容部材2と挟持部材9とが、互いに離間する複数のレーザ溶着部Pにおいて、互いにレーザ溶着されていたが、収容部材2と挟持部材9とは、収容部材2と挟持部材9との接触部の全体において、互いにレーザ溶着されていてもよい。この場合、レーザ溶着用のレーザ光を接触部の全体に同時に照射してもよいし、或いは、接触部に沿ってレーザ溶着用のレーザ光を相対的に移動させながらレーザ溶着用のレーザ光を接触部の全体に照射してもよい。
Moreover, in the said embodiment, although the
1…光半導体デバイス、2…収容部材、3…凹部(収容空間)、3b…開口部、4,11…凹部、5…光半導体素子、8…光透過部材、9…挟持部材、13…規制部、P…レーザ溶着部、G…隙間、L…レーザ光。
DESCRIPTION OF
Claims (10)
前記光半導体素子が収容される収容空間を有する収容部材と、
前記収容空間の開口部を覆い、前記光を略透過する光透過部材と、
前記収容部材とで前記光透過部材を挟持する挟持部材と、を備え、
前記収容部材と前記挟持部材とは、樹脂により形成され、互いにレーザ溶着されていることを特徴とする光半導体デバイス。 An optical semiconductor element that emits or receives light; and
An accommodating member having an accommodating space in which the optical semiconductor element is accommodated;
A light transmissive member that covers the opening of the housing space and substantially transmits the light;
A clamping member that clamps the light transmitting member with the housing member,
The optical semiconductor device, wherein the housing member and the clamping member are made of resin and laser-welded to each other.
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