JP2008272842A - Flow control device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a flow control device capable of efficiently operating a polishing device with a small amount of slurry. <P>SOLUTION: This flow control device is arranged between a slurry feeder 3 for feeding the slurry and a CMP device 2 for performing polishing of a workpiece with the slurry from the slurry feeder 3, and it controls the flow of the slurry sent out from a slurry feeder 3 side to a CMP device 2 side. It is provided with a valve 12 for limiting the flow of the slurry sent to the CMP device 2 in pipe arrangement between its own device and the CMP device 2, and a sequencer 11 for controlling the flow of the slurry sent to the CMP device 2 from the slurry feeder 3 side by controlling the valve 12. The sequencer 11 varies the flow of the slurry sent out to the CMP device 2 side so that the flow of the slurry fed to the CMP device 2 is increased/decreased at a prescribed timing when the CMP device 2 performs polishing of the workpiece. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a flow rate control device for controlling the flow rate of a slurry.

  Conventionally, in a CMP (Chemical Mechanical Polishing) apparatus, a semiconductor wafer or the like is chemically mechanically polished while supplying a slurry solution. In such an apparatus that processes a workpiece while supplying a predetermined liquid, it is desired to efficiently control the flow rate of the supplied liquid to efficiently process the workpiece. For example, when a semiconductor wafer is polished by a conventional CMP apparatus, the etching rate of the semiconductor wafer differs depending on the concentration and amount of the slurry solution supplied to the semiconductor wafer side.

  The chemical solution supply apparatus described in Patent Literature 1 is a supply tank that mixes a chemical solution based on the supply of the first stock solution and the second stock solution, and supplies the chemical solution stored in the mix tank to the supply device. Piping, pump for sending the chemical in the mixing tank to the supply pipe, measuring device for measuring the concentration of the chemical, and mixing based on the concentration measurement value output from the measuring device while controlling the preparation and supply of the chemical And a control device for adjusting the concentration of the chemical solution in the tank. And the measuring apparatus always measures the density | concentration of a chemical | medical solution with the ultrasonic concentration meter arrange | positioned immediately after the pump.

JP 2003-170034 A

  However, in the above prior art, the concentration of the chemical solution in the mixing tank can be adjusted, but the flow rate of the chemical solution supplied to the apparatus to be supplied cannot be controlled. For this reason, there has been a problem that it is not possible to provide an appropriate flow rate of the chemical solution to the supplied apparatus, and the supplied apparatus cannot be operated efficiently. In addition, since a chemical solution having an appropriate flow rate cannot be provided to the supply apparatus, there is a problem that unnecessary chemical liquid is supplied to the supply apparatus more than necessary, and the use efficiency of the chemical liquid is deteriorated.

  This invention is made | formed in view of the above, Comprising: It aims at obtaining the flow volume control apparatus which can operate | move a polishing apparatus efficiently with a small amount of slurry. It is another object of the present invention to obtain a flow rate control device that can control the flow rate of the liquid supplied to the supply target device and efficiently operate the supply target device with a small amount of liquid.

  In order to solve the above-described problems and achieve the object, the present invention is arranged between a slurry supply device for supplying a slurry and a polishing device for polishing a workpiece using the slurry from the slurry supply device. A slurry that is installed and controls the flow rate of the slurry that is sent from the slurry supply device side to the polishing device side, and is sent to the polishing device in a first pipe between the device and the polishing device. A first flow rate restriction unit that restricts the flow rate of the slurry, and a control unit that controls the flow rate restriction unit and controls the flow rate of the slurry sent from the slurry supply device side to the polishing device, the control unit, When the polishing apparatus polishes the workpiece, the flow rate of the slurry to be sent to the polishing apparatus side is adjusted so that the flow rate of the slurry supplied to the polishing apparatus increases or decreases at a predetermined timing. Characterized thereby of.

  According to this invention, since the flow rate of the slurry sent to the polishing device side is changed so that the flow rate of the slurry supplied to the polishing device increases or decreases at a predetermined timing, the polishing device can be operated efficiently with a small amount of slurry. There is an effect that it becomes possible.

  Hereinafter, embodiments of a flow control device according to the present invention will be described in detail with reference to the drawings. Note that the present invention is not limited to the embodiments.

Embodiment FIG. 1 is a diagram showing a configuration of a slurry supply system according to an embodiment of the present invention. The slurry supply system 100 includes a slurry supply device 3, a slurry stock solution tank 41, a water tank 42, a slurry control device 1, a CMP (polishing device) device 2, and pipes 51A and 51B.

  In the slurry supply system 100, the slurry control device 1 is disposed between the slurry supply device 3 and the CMP device 2, and the slurry control device 1 controls the flow rate of the slurry sent from the slurry supply device 3 side to the CMP device 2. Control.

  The slurry supply apparatus 3 is connected to the slurry control apparatus 1 via a pipe 51A, and the slurry control apparatus 1 is connected to the CMP apparatus 2 via a pipe 51B. The slurry stock solution tank 41 is a tank for storing the slurry stock solution, and the water tank 42 is a tank for storing water to be mixed with the slurry stock solution. The slurry stock solution tank 41 and the water tank 42 are connected to the slurry supply device 3.

  The slurry supply device 3 is a device that supplies a slurry solution (CMP slurry) (the slurry described in the claims) to the CMP device 2, and supplies the slurry stock solution in the slurry stock solution tank 41 and the water in the water tank 42 to a predetermined level. Mixing at a ratio (for example, slurry stock solution: water is mixed at 1: 1) to produce a slurry solution, which is sent to the pipe 51A side.

  The slurry control apparatus 1 sends the slurry solution from the slurry supply apparatus 3 to the CMP apparatus 2 via the pipe 51B. The slurry control apparatus 1 of the present embodiment sends the slurry solution to the pipe 51B side (CMP apparatus 2 side) at a predetermined timing and sends the slurry solution so as not to send the slurry solution to the pipe 51B side at a predetermined timing. Control timing.

  The CMP apparatus 2 sends the slurry solution from the slurry control apparatus 1 sent via the pipe 51B onto the WA (wafer) (workpiece) 22 via the head 21. The CMP apparatus 2 rotates the head 21 to bring the slurry solution into contact with the WA 22 and chemically and mechanically polish the WA 22 (such as a tungsten film or a nitride film) with an abrasive in the slurry solution.

  Next, a detailed configuration of the slurry control apparatus 1 and a slurry solution supply path will be described. FIG. 2 is a diagram for explaining the configuration of the slurry control device and the supply path of the slurry solution.

  The slurry supply device 3 is connected to the circulation pipe 32, and the generated slurry solution is circulated in the circulation pipe 32 by the pump 31. The circulation pipe 32 is connected to the pipe 51A, and the slurry solution from the slurry supply apparatus 3 is sent to the slurry control apparatus 1 side through the pipe 51A. A valve 5 is disposed in the pipe 51A. The valve 5 is opened when the slurry solution in the circulation pipe 32 is supplied to the CMP apparatus 2 side. The slurry solution circulating in the circulation pipe 32 is sent to the slurry control device 1 side through the valve 5, and the slurry control device 1 sends the slurry solution to the CMP device 2.

  The slurry control apparatus 1 includes pipes 61 to 63, a pump 4, valves 12 and 13, and a sequencer (control unit) 11. The pipe (second pipe) 63 is connected to the slurry supply device 3 (circulation pipe 32) side through the pipe 51A. The pump 4 is disposed in the pipe 63, and the pipe 63 is branched into pipes 61 and 61 at the tip of the pump 4. The pump 4 sends the slurry solution from the pipe 63 to the pipes 61 and 62.

  The pipe (first pipe) 61 is connected to the CMP apparatus 2 side via the pipe 51B. The pipe 61 is provided with a valve (first flow rate limiting unit) 12, and the valve 12 limits the flow rate of the slurry solution flowing through the pipe 61 (flow rate of slurry sent to the CMP apparatus 2). The pipe 62 (third pipe) is connected to the pipe 63 (between the valve 5 and the pump 4). A valve (second flow rate restricting unit) 13 is disposed in the pipe 62, and the valve 13 restricts the flow rate of the slurry solution flowing through the pipe 62 (flow rate of slurry returned to the pipe 63).

  The sequencer 11 is connected to the valves 12 and 13 and controls the opening and closing of the valves 12 and 13. In the present embodiment, the sequencer 11 closes the valve 13 when the valve 12 is opened, and opens the valve 12 when the valve 12 is closed. In other words, the sequencer 11 sends the slurry solution to the CMP apparatus 2 side via the valve 12 at a predetermined timing, and sends the slurry solution to the pump 4 side via the valve 13 when not sending the slurry solution to the CMP apparatus 2 side. Return to the valve 5 side.

  Next, an operation procedure (control timing by the sequencer 11) of the slurry control apparatus 1 will be described. FIG. 3 is a diagram for explaining the operation timing of the slurry control apparatus. The sequencer 11 first opens the valve 12 for 1 second and sends the slurry solution sent from the pump 4 to the CMP apparatus 2 side. At this time, the sequencer 11 keeps the valve 13 closed. As a result, the slurry solution delivered from the pump 4 is applied on the WA 22 by a predetermined amount (for one second) via the head 21 of the CMP apparatus 2. The CMP apparatus 2 polishes the WA 22 using the slurry solution applied on the WA 22.

  When 1 second elapses after the valve 12 is opened, the sequencer 11 closes the valve 12 for 1 second and opens the valve 13 for 1 second. Thereby, the slurry solution delivered from the pump 4 is returned to the pipe 63 between the valve 5 and the pump 4. At this time, while the head 21 of the CMP apparatus 2 is rotating, the polishing of the WA 22 is continued using the previously applied slurry solution.

  Next, when 1 second elapses after the valve 12 is closed, the sequencer 11 opens the valve 12 for 1 second and sends the slurry solution sent from the pump 4 to the CMP apparatus 2 side. At this time, the sequencer 11 keeps the valve 13 closed. As a result, the slurry solution delivered from the pump 4 is applied on the WA 22 by a predetermined amount (for one second) via the head 21 of the CMP apparatus 2. The CMP apparatus 2 polishes the WA 22 using the slurry solution applied on the WA 22.

  When 1 second has elapsed since the valve 12 was opened, the sequencer 11 closes the valve 12 for 1 second and opens the valve 13 for 1 second. Thereby, the slurry solution delivered from the pump 4 is returned to the pipe 63 between the valve 5 and the pump 4. At this time, the head 21 of the CMP apparatus 2 continues to polish the WA 22 using the previously applied slurry solution while rotating.

  The sequencer 11 repeatedly opens and closes the valves 12 and 13. In other words, the sequencer 11 controls the flow rate of the slurry solution sent to the CMP device 2 side so that the flow rate of the slurry solution supplied to the CMP device 2 increases and decreases at a predetermined timing when the CMP device 2 polishes the WA 22. It is changing. In the present embodiment, for example, the sequencer 11 controls the opening and closing of the valves 12 and 13 so as to repeatedly send and stop the slurry solution to the CMP apparatus 2 side every second. When a predetermined time set in advance elapses, the sequencer 11 closes the valve 12 and opens the valve 13 to finish the polishing process of the WA 22 by the CMP apparatus 2.

  FIG. 4 is a diagram for explaining the difference between the amount of the slurry solution used by the slurry supply system according to the present embodiment and the amount of the slurry solution used in the conventional CMP apparatus. FIG. 4 shows the amount of slurry solution used when a slurry solution having a ratio of slurry stock solution: water of 1: 1 is coated on the wafer.

  In a conventional CMP apparatus, the wafer is polished while the slurry solution is kept flowing on the wafer. The upper part of FIG. 4 shows the case where the conventional CMP apparatus polishes the wafer for 60 seconds while continuously supplying the slurry solution at a rate of 200 cc / min. In this case, the amount of the slurry solution used for 60 seconds is 200 cc, and the wafer etching rate is 3000 kg / min.

  On the other hand, in the slurry supply system 100 according to the present embodiment, the polishing of the wafer (WA22) is performed by repeatedly applying and stopping the slurry solution at every predetermined timing. In the lower part of FIG. 4, the slurry supply system 100 according to the present embodiment applies the slurry solution at a rate of 200 cc / min for 60 seconds, while applying and stopping the slurry solution every second. The case where it grind | polished is shown. In other words, at the timing of applying the slurry solution, the slurry solution is applied at a rate of 200 cc / min, but at the timing of not applying the slurry solution, the slurry solution is applied at a rate of 0 cc / min. . In this case, the amount of the slurry solution used for 60 seconds is 100 cc, and the etching rate of the wafer is 3000 kg / min.

  In this way, the slurry supply system 100 repeats the application and stoppage of the slurry solution every second, so that the amount of the slurry solution (slurry stock solution) used in the conventional CMP apparatus is half the amount used. It becomes possible to etch the wafer. Further, the etching rate of the wafer is 3000 Å / min, and the wafer can be etched at the same etching rate as the conventional CMP apparatus.

  Incidentally, there is a method of etching a wafer by reducing the slurry concentration of the slurry solution. In this case, since the etching rate of the wafer becomes small, the wafer cannot be etched efficiently.

  There is also a method of etching a wafer by reducing the amount of slurry solution applied to the wafer. Also in this case, since the etching rate of the wafer becomes small, the wafer cannot be etched efficiently. On the other hand, when etching is performed by the slurry supply system 100 according to the present embodiment, the wafer can be etched at the same etching rate as that of the conventional CMP apparatus, so that the wafer can be etched efficiently and quickly.

  In the present embodiment, the case where the slurry control device 1 controls the delivery timing of the slurry solution has been described, but the flow rate control device (solution supply control device) such as the slurry control device 1 determines the delivery timing of other liquids. You may control.

  For example, when the liquid supply device is a developing device, the flow rate control device may control the timing of supplying the developer from the liquid supply device to the developing device. In this case, it is possible to perform development efficiently and quickly with a smaller amount of developer than in a conventional developing device.

  When the liquid supply apparatus is a resist coating apparatus, the flow rate control apparatus may control the timing of sending the resist to the resist coating apparatus. In this case, it becomes possible to perform application quickly and efficiently with less resist than in a conventional resist coating apparatus.

  Further, when the liquid supply device is a machine tool, the flow rate control device may control the delivery timing of the machine oil to the machine tool. In this case, it is possible to operate at a friction rate similar to that of the conventional machine tool with less machine oil than that of the conventional machine tool.

  As described above, the flow control device is connected to a supply target device (a device that operates while using the supplied liquid and discharging unnecessary liquid) while using a part of the supplied liquid, and supplies the liquid. Since the flow rate of the liquid delivered from the apparatus to the supply apparatus is controlled, the supply apparatus can be efficiently operated with a small amount of liquid.

  In this embodiment, the case where the slurry control device 1 controls the delivery timing of the slurry solution has been described. However, the flow rate control device may control the delivery timing of gas or solid (powder, etc.).

  In this embodiment, the case where the slurry solution is repeatedly sent and stopped every second has been described. However, the slurry solution may be sent and stopped every several seconds. For example, the slurry solution may be sent and stopped every 2 to 4 seconds. Further, the slurry solution delivery time and stop time are not limited to being repeated at regular time intervals, and the slurry solution delivery time and stop time may vary from slurry slurry delivery time to stop time.

  In this embodiment, the slurry solution is repeatedly sent and stopped. However, the slurry solution is not limited to being stopped, and normal sending of the slurry solution and sending with a reduced amount of the slurry solution may be repeated. Good. For example, 200 cc delivery of the slurry solution and 100 cc delivery of the slurry solution may be repeated every second. In this embodiment, the case where the slurry stock solution and water are mixed at a ratio of 1: 1 has been described, but the slurry stock solution and water may be mixed at any ratio.

  In the present embodiment, the case where one CMP apparatus 2 and one slurry control apparatus 1 are connected to the slurry supply apparatus 3 has been described. However, a plurality of CMP apparatuses 2 and a plurality of slurry controls are connected to the slurry supply apparatus 3. The device 1 may be connected. In this case, for example, one slurry control device 1 is connected to each CMP device 2, and each slurry control device 1 is connected to the slurry supply device 3 side (circulation pipe 32). At this time, a plurality of valves 12 and a plurality of valves 13 may be controlled by one sequencer 11.

  For example, one slurry control apparatus 1 includes a sequencer 11, and this sequencer 11 is connected to valves 12 and 13 of each CMP apparatus 2. Accordingly, the flow rate of the slurry solution to the plurality of CMP apparatuses 2 can be controlled by one sequencer, and it is not necessary for all the slurry control apparatuses 1 to include the sequencers 11.

  In the present embodiment, the case where the slurry control apparatus 1 includes the pipes 61 to 63, the pump 4, the valves 12, 13 and the sequencer 11 has been described. However, the slurry control apparatus 1 includes the pipe 62 and the valve 13. It is good also as a structure which does not have. In this case, the sequencer 11 controls the flow rate of the slurry solution to the CMP apparatus 2 by controlling the valve 12. The slurry supply system 100 may not have the pump 4, or the slurry control device 1 and the pump 4 may be configured separately.

  In addition, the slurry control apparatus 1 may be configured without the pipes 61 and 63. In the case where the slurry control device 1 has a configuration without the pipe 61, the valve 12 is disposed in the pipe 51B. Moreover, when the slurry control apparatus 1 is a structure which does not have the piping 61, the piping 62 is connected to the piping 51A.

  In the present embodiment, the pipe 62 is connected to the pipe 63, and the slurry solution sent from the pump 4 is returned to the pump 4 side (valve 5 side). However, the pipe 62 is connected to any position. May be. For example, the pipe 62 may be connected to the circulation pipe 32 or may be connected to the slurry stock solution tank 41.

  Thus, according to the embodiment, it becomes possible to operate the CPM device 2 efficiently with a small amount of slurry solution and to perform rapid etching. Further, since the slurry control device 1 is connected between the slurry supply device 3 and the CMP device 2, even when the existing slurry supply device 3 and the CMP device 2 are used, a small amount of slurry solution is used. It becomes possible to perform etching at a high etching rate. Therefore, it becomes possible to etch efficiently with a simple configuration.

  Further, since the slurry solution sent from the pump 4 is returned to the front side of the pump 4 by controlling the valve 13, the fluid pressure of the slurry solution between the pump 4 and the valve 12 can be maintained appropriately. Therefore, the flow rate of the slurry solution delivered to the CMP apparatus 2 can be controlled appropriately and easily.

  Further, since the slurry solution is repeatedly sent to and stopped from the CMP apparatus 2 every predetermined time (for example, every second), the flow rate of the slurry solution sent to the CMP apparatus 2 can be easily controlled.

  As described above, the flow rate control device according to the present invention is suitable for controlling the flow rate of slurry and the flow rate of liquid.

It is a figure which shows the structure of the slurry supply system which concerns on embodiment of this invention. It is a figure for demonstrating the structure of a slurry control apparatus, and the supply path | route of a slurry solution. It is a figure for demonstrating the operation timing of a slurry control apparatus. It is a figure for demonstrating the difference of the quantity of the slurry solution which the slurry supply system which concerns on this Embodiment uses, and the quantity of the slurry solution which was used with the conventional CMP apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Slurry control apparatus 2 CMP apparatus 3 Slurry supply apparatus 4,31 Pump 5,12,13 Valve 11 Sequencer 21 Head 32 Circulation piping 41 Slurry stock solution tank 42 Water tank 51A, 51B, 61-63 Piping 100 Slurry supply system

Claims (5)

A slurry that is disposed between a slurry supply device that supplies slurry and a polishing device that polishes a workpiece using the slurry from the slurry supply device, and that is sent from the slurry supply device side to the polishing device side. In the flow control device for controlling the flow rate of
A first flow rate limiting unit that limits a flow rate of slurry to be sent to the polishing device in a first pipe between the own device and the polishing device;
A control unit for controlling the flow rate limiting unit to control the flow rate of the slurry sent from the slurry supply device side to the polishing device;
With
The controller controls the flow rate of the slurry to be sent to the polishing device so that the flow rate of the slurry supplied to the polishing device is increased or decreased at a predetermined timing when the polishing device polishes the workpiece. A flow control device characterized by being changed. A third pipe for returning the slurry sent from the slurry supply apparatus to the own apparatus through the second pipe between the slurry supply apparatus and the own apparatus to the second pipe;
A second flow rate restriction unit for restricting a flow rate of the slurry to be returned to the second pipe in the third pipe;
Further comprising
The said control part controls the flow volume of the slurry sent from the said slurry supply apparatus side to the said polishing apparatus side by controlling the said 2nd flow restriction part with the said 1st flow restriction part. The flow control device described in 1.   The control unit controls the first flow rate limiting unit and the second flow rate limiting unit so as to repeat sending and stopping of the slurry to the polishing apparatus side every predetermined time. The flow control device according to 1 or 2. A slurry that is disposed between a slurry supply device that supplies slurry and a polishing device that polishes a workpiece using the slurry from the slurry supply device, and that is sent from the slurry supply device side to the polishing device side. In the flow control device for controlling the flow rate of
Control for controlling the flow rate of the slurry to be sent from the slurry supply device side to the polishing device by controlling a flow rate restricting unit that restricts the flow rate of the slurry to be sent to the polishing device in a pipe between the own device and the polishing device. Part
The controller controls the flow rate of the slurry to be sent to the polishing device so that the flow rate of the slurry supplied to the polishing device is increased or decreased at a predetermined timing when the polishing device polishes the workpiece. A flow control device characterized by being changed. A liquid supply device that supplies a liquid and a supply device that uses the liquid from the liquid supply device and performs a predetermined operation while discharging unnecessary liquid. In the flow rate control device that controls the flow rate of the liquid delivered to the supply device side,
A first flow rate limiting unit that limits a flow rate of the liquid to be sent to the supplied device in a pipe between the own device and the supplied device;
A control unit that controls the flow rate limiting unit to control the flow rate of the liquid that is sent from the liquid supply device side to the supplied device;
With
The control unit, when the supplied device performs the predetermined operation, the flow rate of the liquid sent to the supplied device side so that the flow rate of the liquid supplied to the supplied device increases or decreases at a predetermined timing. A flow control device characterized by changing the flow rate.

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