JP2008270369A - Wiring board with built-in capacitor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring board being easily manufactured, having an excellent reliability and easily making use of the capacity of a semiconductor element. <P>SOLUTION: The wiring board with a built-in capacitor has a core section, a capacitor section 21 housed in the core section and a built-up section laminated on at least the capacitor section 21 capable of loading a first element with a processor core section and another second element. In the wiring board with the built-in capacitor, the capacitor section 21 has a terminal group 40 consisting of a plurality of connecting terminals 4 having a plurality of function sections and being led out to the external surface of the capacitor section 21 through connections to the respective function sections. In the wiring board, the terminal group 40 contains a terminal group 41 capable of being connected to a first function section and the first element and the terminal group 42 capable of being connected to a second function section and another second element, and the terminal group 42 is arranged outside the terminal group 41. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a capacitor built-in wiring board. More specifically, the present invention relates to a wiring board having a capacitor housed in a board core and mounting a semiconductor element.

In recent years, more and more circuit blocks have been formed in semiconductor elements. In addition, the adoption of a multi-chip package (hereinafter simply referred to as “MCP”), which is a package in which a plurality of semiconductor elements are mounted, has been promoted. In such a semiconductor element and package, if a power supply common to a plurality of circuit blocks is used, a large voltage fluctuation occurs at the time of simultaneous switching, resulting in noise, which affects a plurality of circuit blocks and semiconductor elements sharing the power supply. There's a problem. For this reason, a decoupling capacitor is used in order to reduce sharing of the power source. The following patent document 1 is known as such a technique.
JP-A-2005-39243

However, these complicated semiconductor elements and packages tend to have a large number of terminals and a small distance between terminals, and the connection between the semiconductor elements and the decoupling capacitor becomes complicated. Furthermore, this connection needs to be made by shortening the wiring distance between the decoupling capacitor and the semiconductor element as much as possible. This is because when the wiring distance is increased, the power supply impedance is increased particularly in a high frequency range.
The present invention has been made in view of the above, and it is an object of the present invention to provide a wiring board that is easy to manufacture, has excellent reliability, and easily draws out the capabilities of semiconductor elements.

That is, the present invention is as follows.
(1) A substrate core portion, a capacitor portion accommodated in the substrate core portion, a first semiconductor element having a processor core portion, and another semiconductor element different from the first semiconductor element can be mounted, and at least A built-in capacitor wiring board comprising a build-up unit laminated on the capacitor unit,
The capacitor unit includes a plurality of capacitor function units, and includes a connection terminal group including a plurality of connection terminals connected to the capacitor function units and led to the outer surface of the capacitor unit,
The connection terminal group includes a first connection terminal group connected to a first capacitor function unit of the capacitor function units and electrically connectable to the first semiconductor element; and A second connection terminal group connected to the second capacitor function part and electrically connectable to the other semiconductor element,
The second connection terminal group is disposed on the outer surface of the capacitor portion on the outer side with respect to the first connection terminal group (hereinafter, the present invention is referred to as “the first embodiment”). Also referred to as “invention”).
(2) A semiconductor element having a substrate core portion, a capacitor portion accommodated in the substrate core portion, a processor core portion and a circuit portion other than the processor core portion can be mounted, and at least on the capacitor portion A built-in capacitor wiring board comprising a stacked build-up unit,
The capacitor unit includes a plurality of capacitor function units, and includes a connection terminal group including a plurality of connection terminals connected to the capacitor function units and led to the outer surface of the capacitor unit,
The connection terminal group includes a first connection terminal group that is connected to the first capacitor function unit of the capacitor function units and can be electrically connected to the processor core unit, and a second of the capacitor function units. A second connection terminal group that is connected to the capacitor function section and connectable to the other circuit section.
The second connection terminal group is disposed on the outer surface of the capacitor portion on the outer side with respect to the first connection terminal group (hereinafter, the present invention is referred to as “the second embodiment”). Also referred to as “invention”).
(3) The capacitor built-in wiring board according to (1) or (2), wherein the second connection terminal group is disposed so as to surround the first connection terminal group on an outer surface of the capacitor portion.
(4) The second capacitor function section includes a plurality of capacitor capacitance sections, and the second connection terminal group includes a plurality of second sub connection terminal groups corresponding to the plurality of capacitor capacitance sections. The capacitor built-in wiring board according to any one of 1) to (3).
(5) The circuit board with a built-in capacitor according to (2), wherein the other circuit unit is a memory circuit unit.

According to the capacitor built-in wiring board of the first aspect of the present invention, the first capacitor function unit to be connected to the semiconductor element having the processor core unit is connected to other semiconductor elements. The capacitor function part is arranged outside. For this reason, the connection path | route with the semiconductor element corresponding to each capacitor function part can be shortened, and the power supply impedance especially in a high frequency region can be suppressed effectively. Therefore, it is possible to provide a wiring board that can easily draw out the capability of the semiconductor element. In addition, since the connection can be made with a shorter path, the manufacturing can be facilitated, and the reliability and cost of the wiring board with a built-in capacitor can be improved.
According to the wiring board with a built-in capacitor according to the second aspect of the present invention, the first capacitor function unit to be connected to the processor core unit of the semiconductor element is connected to the other circuit unit. The capacitor function unit is arranged outside. For this reason, the connection path | route with the circuit part corresponding to each capacitor function part can be shortened, and especially the power supply impedance in a high frequency region can be suppressed effectively. Therefore, it is possible to provide a wiring board that can easily draw out the capability of the semiconductor element. In addition, since the connection can be made with a shorter path, the manufacturing can be facilitated, and the reliability and cost of the wiring board with a built-in capacitor can be improved.
When the second connection terminal group is disposed on the outer surface of the capacitor portion so as to surround the first connection terminal group, it is easier to obtain the effects of the first invention and the second invention.
When the second capacitor function section has a plurality of capacitor capacity sections and the second connection terminal group is composed of a plurality of second sub connection terminal groups corresponding to the plurality of capacitor capacity sections, the second capacitor function section is more accurately connected. The path can be shortened, and the power source impedance can be more effectively reduced.
When the other circuit unit is a memory circuit unit, that is, by arranging a circuit unit that requires only a smaller capacitor with respect to the processor core unit outside the first connection terminal group, The connection path can be shortened accurately, and a reduction in power source impedance can be obtained particularly effectively.

[1] Capacitor-embedded wiring board of the first invention The capacitor-embedded wiring board of the first invention will be described below with reference to FIGS. For the sake of simplicity, FIG. 1 shows semiconductor elements 90 (91 and 92) to be mounted in addition to the capacitor built-in wiring board 101 of the first invention.

The capacitor-embedded wiring substrate 10 (101) of the first invention includes a substrate core portion 20, a capacitor portion 21 accommodated in the substrate core portion 20, a first semiconductor element 91 having a processor core portion 911, and a first semiconductor element 91. A built-in capacitor wiring substrate 10 (101) that can include another semiconductor element 92 different from the semiconductor element 91 and includes a build-up unit 30 stacked on at least the capacitor unit 21;
The capacitor unit 21 includes a plurality of capacitor function units 22, and includes a connection terminal group 40 including a plurality of connection terminals 4 connected to each capacitor function unit 22 and led out to the outer surface of the capacitor unit 21.
The connection terminal group 40 includes a first connection terminal group 41 that is connected to the first capacitor function unit 221 of the capacitor function unit 22 and can be electrically connected to the first semiconductor element 91, and the capacitor function unit 22. A second connection terminal group 42 connected to the second capacitor function unit 222 and electrically connected to another semiconductor element 92,
The second connection terminal group 42 is arranged on the outer surface of the capacitor portion 22 on the outer side with respect to the first connection terminal group 41.

The capacitor built-in wiring board 10 (101) of the first invention includes a substrate core part 20, a capacitor part 21, and a buildup part 30.
The “board core part (20)” is a part that accommodates the capacitor part 21 and serves as a core that supports the entire wiring board. The substrate core 20 may be a simple plate-like body, but usually has a housing portion 201 that houses the capacitor portion 21. The accommodating portion 201 can use a through hole and / or a bottomed hole provided in the substrate core portion 20. Note that the capacitor unit 21 in the state of being accommodated in the accommodating part 201 may partially protrude from the accommodating part 201 or may be completely accommodated in the accommodating part 201.

  The material constituting the substrate core 20 is not particularly limited, but it is preferable to use a heat-resistant polymer material such as an epoxy resin, a polyimide resin, a bismaleimide / triazine resin, or a polyphenylene ether resin. Furthermore, it may have glass fibers, glass fiber woven fabrics, glass fiber nonwoven fabrics, polyamide fibers, polyamide fiber nonwoven fabrics, polyamide fiber woven fabrics, etc. as core materials for obtaining better strength and better thermal properties. .

  Further, as illustrated in FIG. 1, the substrate core 20 can be provided with a through-hole conductor 202 that conducts the upper surface side 20a and the lower surface side 20b. The inside of the through hole may be filled with a conductor other than the through hole conductor, but as shown in FIG. 1, it can be filled with a cured body 203 obtained by curing an insulating filler.

The “capacitor portion 21” is a capacitor accommodated in the substrate core portion 20 (see FIGS. 1 to 8). The capacitor unit 21 is normally fixed in the storage unit 201 with a filler 204 such as a resin material such as an epoxy resin while being stored in the substrate core 20 (see FIG. 1).
The configuration of the capacitor unit 21 (see FIG. 8) is not particularly limited. Usually, the ceramic dielectric layer 223, a plurality of ground electrode layers 224a and a plurality of ground electrode layers 224a alternately stacked via the ceramic dielectric layer 223 are provided. A power electrode layer 224b.

Furthermore, it penetrates in the laminating direction of the ground electrode layer 224a, and penetrates in the laminating direction of the plurality of ground vias 225 for electrically connecting the ground electrode layers 224a and the power electrode layer 224b. It is preferable to have a plurality of power supply vias 226 that electrically connect the power supply electrode layers 224b of the separation layers (see FIGS. 9 and 10). The ground vias 225 and the power supply vias 226 are preferably in a staggered arrangement (see FIGS. 9 and 10) or a grid arrangement. With this configuration, the capacitor can be increased in capacity, reduced in height, and reduced in area as compared with other configurations.
9 is a schematic plan view of a plane perpendicular to the stacking direction of the capacitor portion 21 and including the ground electrode layer 224a, and FIG. 10 is perpendicular to the stacking direction of the capacitor portion 21 and is a power supply electrode. FIG. 10 is a schematic plan view of a surface including the layer 224 b, and the ground electrode layer 224 a in FIG. 9 and the power supply electrode layer 224 b in FIG. 10 are conductor layers adjacent to each other through the ceramic dielectric layer 223.

  Although the material which comprises the said ceramic dielectric material layer 223 is not specifically limited, Low temperature baking type dielectric ceramic materials, such as glass ceramics, High temperature baking type dielectric ceramic materials, such as an alumina and aluminum nitride, etc. can be used. The glass ceramic is a material in which an inorganic filler (alumina filler or the like) is dispersed and contained in various glasses such as borosilicate glass. Further, a high dielectric ceramic material such as barium titanate can be used.

  The material forming the ground electrode layer 224a and the power supply electrode layer 224b is not particularly limited, and copper, silver, aluminum, nickel, molybdenum, tungsten, or the like can be used. In particular, when using a low-temperature fired dielectric ceramic material as a dielectric layer, it is preferable to use copper, silver, aluminum and alloys thereof, and when using a high-temperature fired dielectric ceramic material as a dielectric layer, Nickel, molybdenum, tungsten and alloys thereof are preferably used. Even when a high-temperature fired dielectric ceramic material is used, copper, silver, aluminum, and alloys thereof can be used by using a non-oxidizing fired atmosphere at the time of manufacture.

In addition, the capacitor unit 21 includes a plurality of capacitor function units 22 that are electrically independent from each other (can be used independently). The number of capacitor function units 22 (221 and 222) included in the capacitor unit 21 is not particularly limited as long as it is two or more, but the semiconductor element 90 to be mounted on the capacitor built-in wiring board 10 of the present invention. It is preferable to have at least as many capacitor function units 221 as the processor core units 911. The processor core unit 911 operates faster than other circuit units and requires a large current. For this reason, it is because it is easy to obtain the effect of noise reduction especially by having the capacitor function part 221 corresponding to each processor core part 911.
Note that the number of processor cores 911 is the total number of all processor cores included in all semiconductor elements to be mounted.

Furthermore, among the capacitor function units 22, a capacitor function unit 221 for a processor core unit to be connected to the processor core unit 911, and a capacitor function unit 222 for another circuit to be connected to another circuit unit, , It is preferable that the capacitor function unit 221 for the processor core unit has a larger capacity.
Further, the ground via 225 and the power supply via 226 included in the capacitor unit 21 are included in each semiconductor element via various conductors 31a (a wiring layer, a solder bump 311a, etc.) formed in the buildup unit 30. It is electrically connected to the power supply conductor and the ground conductor included in each circuit portion of the element.

  Further, the capacitor unit 21 includes a connection terminal group 40 including a plurality of connection terminals 4 connected to each capacitor function unit 22 and led out to the outer surface of the capacitor unit 21. Although the form of the connection terminal 4 is not specifically limited, Usually, it is a plate-shaped metal terminal pad. The number of connection terminals 4 included in the connection terminal group 40 is not particularly limited, but is usually 10 or more.

  In addition, on the surface of the capacitor portion 21, the connection terminal group 40 includes a plurality of connection terminal groups classified according to the objects to be connected. That is, the connection terminal group 40 in the wiring board 101 with a built-in capacitor according to the first invention includes a first connection terminal group 41 and a second connection terminal group 42. Among these, the first connection terminal group 41 is a connection terminal group that is connected to the first capacitor function unit 221 of the capacitor function unit 22 and can be electrically connected to the first semiconductor element 91. Further, the second connection terminal group 42 is a connection terminal group that is connected to the second capacitor function unit 222 of the capacitor function unit 22 and can be electrically connected to another semiconductor element 92. The second connection terminal group 42 is disposed outside the first connection terminal group 41. That is, the second connection terminal group 42 is disposed on the side surface side of the capacitor unit 21 with respect to the first connection terminal group 41.

  In recent years, a semiconductor element to be mounted has been arranged such that another circuit part is disposed outside the processor core part in the semiconductor element. Further, in the MCM, the semiconductor element having the processor core is placed at the center, and other semiconductor elements are arranged outside the semiconductor element having the processor core. For this reason, the connection terminal group which a capacitor part has also becomes the arrangement | positioning relationship corresponding to these, can shorten a connection path | route more, and can suppress the power supply impedance especially in a high frequency region effectively.

As for the positional relationship between the first connection terminal group 41 and the second connection terminal group 42, it is only necessary that the second connection terminal group 42 is disposed outside the first connection terminal group 41. It is not limited. As this arrangement relationship, arrangement examples illustrated in FIGS.
That is, the connection terminal group 40 shown in FIG. 4 includes a group of first connection terminal groups 41 arranged in a square shape and a group of second connection terminal groups 42 arranged in a square shape (circle shape). Among them, the second connection terminal group 42 is arranged outside the first connection terminal group 41 and is arranged so as to surround the first connection terminal group 41.
Further, the connection terminal group 40 shown in FIG. 5 is a second connection terminal composed of two groups including a group of first connection terminal groups 41 arranged in a square shape and the same number of connection terminals 4 arranged in a U-shape. Each of the second connection terminal groups 42 is arranged outside the first connection terminal group 41, and each of the second connection terminal groups 42 is a point object (the center of the capacitor portion 21 is The first connection terminal group 41 is disposed so that the U-shape is opposed to the center of the object. In addition, the 2nd connection terminal group 42 in FIG. 5 can also be made into the L-shape which consists of two groups besides a U-shape.
Further, the connection terminal group 40 shown in FIG. 6 includes a group of first connection terminal groups 41 arranged in a square shape and four groups of second connection terminal groups including the same number of connection terminals 4 arranged in an L shape. 42, all of the second connection terminal groups 42 are arranged outside the first connection terminal group 41, and each of the second connection terminal groups 42 is symmetrical with respect to each other (the equidistant point of each opposite side is The first connecting terminal group 41 is disposed so as to face each other with an L shape facing each other.
It is more preferable that the connection terminal group has a configuration in which the second connection terminal group 42 is disposed so as to surround the first connection terminal group 41. Thereby, the connection path between the connection terminal group 40 and the semiconductor element 90 can be shortened particularly effectively.

The second capacitor function unit 222 includes a plurality of capacitor capacitance units, and the second connection terminal group 42 includes a plurality of second sub connection terminal groups 421 corresponding to the plurality of capacitor capacitance units. be able to. In this case, as illustrated in FIG. 7, an assembly of the second sub-connecting terminal groups 421 can be disposed so as to surround the first connecting terminal group 41.
This capacitor capacity portion may be formed in any way. That is, for example, the internal electrode layers (ground electrode layer 224a and power supply electrode layer 224b) connected in the capacitor unit 21 are electrically insulated so as to correspond to the relationship between the capacitor unit 21 and the capacitor function unit 22. Can be formed. Further, for example, a resistor that connects two different power supply vias 226 in one capacitor function unit 22 is composed of a ground via 225, a power supply via 226, a ground electrode layer 224a, a power supply electrode layer 224b, and the like. It can also be obtained by using a resistance material having a high resistance value. By providing this resistor, different potentials can be set in one capacitor function part, and a capacitor capacity part can be formed.

  The shape, size, and the like of the capacitor portion 21 are not particularly limited. For example, the capacitor portion 21 is a flat plate shape having a rectangular shape (further, substantially square shape) in plan view, and has a thickness of 0.2 to 1.0 mm (preferably 0.4 to 0.8 mm). When the thickness is in the range of 0.2 to 1.0 mm, the overall strength of the wiring board with a built-in capacitor can be reduced while being sufficiently obtained. The capacitor portion 21 is preferably accommodated in a position directly below the semiconductor elements 91 and 92 in the capacitor built-in wiring substrate 101.

The “build-up portion 30” is a portion laminated on the substrate core 20 and the capacitor portion 21 accommodated in the substrate core 20, and includes a conductor layer (31a and 31b) and an interlayer insulating layer (32a and 32b). Are alternately laminated, and the outermost layer is usually a portion provided with resist layers (321a and 321b).
The build-up unit 30 (30a and 30b) may be provided only on one surface side of the wiring board 10, but is usually provided on both surface sides, and further preferably provided in a target shape. In general, the pitch between terminals of the connection terminals 311a on the semiconductor element 90 side of the capacitor-embedded wiring board 10 (usually corresponding to the connection terminal group 40 of the capacitor unit 21) and the connection terminals 311b of the capacitor-embedded wiring board 10 on the motherboard 100 side There is a large difference in the pitch between terminals (see FIG. 3). For this reason, by providing the build-up portion 30 (30a and 30b), the pitch can be freely adjusted in the build-up portion 30 (30a and 30b), and the lower surface side from the upper surface side (semiconductor element mounting side) of the wiring board 10 It is possible to output different terminal pitches (to the motherboard mounting side) (see FIGS. 1 and 2).

Moreover, the material which comprises the interlayer insulation layer 32 (32a and 32b) of the buildup part 30 (30a and 30b) is not specifically limited, However, Heat resistance, such as an epoxy resin, a polyimide resin, a bismaleimide triazine resin, a polyphenylene ether resin, etc. It is preferable to use a polymer material having
Furthermore, the conductor layers 31 (31a and 31b) constituting the buildup section 30 (30a and 30b) can be electrically connected to other conductor layers through vias or the like as necessary. If vias are used, they may be stacked using a non-stacked via method (connecting vias may be filled vias or conformal vias) to avoid connection directly above each via. The vias may be stacked in a stacked via system (each via is usually a filled via). The form of each via may be the same or different between the upper surface side buildup portion 30a and the lower surface side buildup portion 30b.

  The capacitor built-in wiring board 10 (101) of the first invention mounts the semiconductor element 90. The wiring board 101 with a built-in capacitor according to the first aspect of the invention mounts a first semiconductor element 91 having a processor core portion 911 and another semiconductor element 92 different from the first semiconductor element 91 as the semiconductor element 90.

  The “first semiconductor element (91)” includes a processor core unit 911. The processor core unit is a circuit capable of performing arithmetic processing. Only one processor core unit 911 may be provided in the first semiconductor element 91, or two or more processor core units 911 may be provided. Further, the first semiconductor element 91 can include other circuits in addition to the processor core unit 911. Examples of other circuits include a memory circuit unit, an I / O circuit unit, an A / D conversion circuit, a D / A conversion circuit, an operational amplifier unit, a PLL circuit unit, and a filter circuit unit. These may use only 1 type and may use 2 or more types together. Moreover, each circuit part may have only one and may have two or more.

Therefore, as the first semiconductor element 91, for example, a semiconductor element having at least two types of circuit parts, that is, a processor core and an I / O circuit part, and at least three of a processor core, a memory circuit part, and an I / O circuit part. Examples thereof include a semiconductor element having a kind of circuit portion. The I / O circuit unit is an input circuit unit that inputs a signal to the processor core unit 911 and an output circuit unit that outputs a signal from the processor core unit, or a signal input and a signal. An input / output circuit unit also used as an output.
The mounting method of the first semiconductor element 91 on the surface (semiconductor element mounting side) of the capacitor built-in wiring board 10 is not particularly limited, and for example, flip-chip mounting can be used.

  The “other semiconductor element (92)” is a semiconductor element 92 different from the semiconductor element 91. Other semiconductor elements 92 may have only one, or may have two or more. Another semiconductor element 92 is a semiconductor element that is the same as the semiconductor element 91 but is different from the first semiconductor element 91. Furthermore, other semiconductor elements having functions and configurations different from those of the semiconductor element 91 are included. Other semiconductor elements 92 have various circuit portions. Examples of the circuit unit include a processor core unit, an I / O circuit unit, a memory circuit unit, an A / D conversion circuit unit, a D / A conversion circuit unit, an operational amplifier unit, a PLL circuit unit, and a filter circuit unit. These may use only 1 type and may use 2 types.

Accordingly, examples of the second semiconductor element 92 include a semiconductor element having two types of circuit portions, that is, a memory circuit and an I / O circuit portion.
Such other semiconductor elements 92 include a calculation element for performing calculations, a sensor element for performing various measurements (temperature, humidity, speed, acceleration, gas type, gas concentration, pressure, etc.), and light emission. Light-emitting elements for receiving light, light-receiving elements for receiving light, communication elements for performing communication, actuator elements having actuator functions (such as a micropump, a microvalve, and a micromotor). These elements may use only 1 type and may use 2 or more types together.

[2] Wiring board with built-in capacitor according to the second invention The wiring board with a built-in capacitor according to the second invention will be described below with reference to FIGS. For the sake of simplicity, FIG. 2 shows a semiconductor element 90 to be mounted in addition to the capacitor built-in wiring board 102 of the second invention.

The capacitor built-in wiring substrate 10 (102) of the second invention includes a substrate core unit 20, a capacitor unit 21 accommodated in the substrate core unit 20, and other circuit units other than the processor core unit 901 and the processor core unit 901. A built-in capacitor wiring substrate 10 (102) including a build-up unit 30 on which a semiconductor element 90 having 902 can be mounted and stacked on at least the capacitor unit 21;
The capacitor unit 21 includes a plurality of capacitor function units 22, and includes a connection terminal group 40 including a plurality of connection terminals 4 connected to each capacitor function unit 22 and led out to the outer surface of the capacitor unit 21.
The connection terminal group 40 includes a first connection terminal group 41 that is connected to the first capacitor function unit 221 of the capacitor function unit 22 and can be electrically connected to the processor core unit 901. A second connection terminal group 42 connected to the second capacitor function unit 222 and connectable to another circuit unit 902, and
The second connection terminal group 42 is arranged outside the first connection terminal group 41 on the outer surface of the capacitor portion 21.
In other words, the wiring board with a built-in capacitor according to the first aspect of the invention differs from the semiconductor element 90 to be mounted in that a semiconductor core 90 includes a processor core part 901 and another circuit part 902. .

Each of the “substrate core portion 20” and the “build-up portion 30” constituting the capacitor-embedded wiring substrate 10 (102) can be applied as it is in the capacitor-embedded wiring substrate 10 (101) of the first invention.
The “capacitor part (21)” is a capacitor accommodated in the substrate core part 20 (see FIGS. 2 and 8). The capacitor unit 21 is normally fixed in the storage unit 201 with a filler 204 such as a resin material such as an epoxy resin while being stored in the substrate core 20. The configuration of the capacitor portion 21 is not particularly limited, and is the same as that in the first invention.

In addition, the capacitor unit 21 includes a plurality of capacitor function units 22 that are electrically independent from each other (can be used independently). The number of the capacitor function units 22 (221 and 222) included in the capacitor unit 21 is not particularly limited and may be two or more, but the semiconductor element 90 to be mounted on the capacitor built-in wiring board 102 of the present invention. It is preferable to have at least as many capacitor function units 221 as the processor core units 901.
The processor core unit 901 operates at a higher speed than other circuit units and requires a large current. For this reason, by having the capacitor function unit 221 corresponding to each processor core unit 901, it is particularly easy to obtain an effect of noise reduction. Note that the number of the processor core units 901 is the total number of the processor core units 901 when two or more semiconductor elements 90 including the processor core units 901 and other circuit units 902 are provided.

Further, of the capacitor function unit 22, the capacitor function unit 221 for the processor core unit to be connected to the processor core unit 901 and the capacitor function unit 222 for other circuits to be connected to the other circuit unit 902. And the capacitor function unit 221 for the processor core unit is preferably larger in capacity.
In addition, the ground via 225 and the power supply via 226 included in the capacitor unit 21 are power supplies included in each circuit unit (the processor core unit 901 and the other circuit unit 902) via various conductors 31a formed in the buildup unit 30. It is electrically connected to the conductor for conductor and the conductor for ground.

  The capacitor unit 21 includes a connection terminal group 40 including a plurality of connection terminals 4 connected to each capacitor function unit 22 and led to the outer surface of the capacitor unit 21. Although the form of the connection terminal 4 is not specifically limited, Usually, it is a plate-shaped metal terminal pad. The number of connection terminals 4 included in the connection terminal group 40 is not particularly limited, but is usually 10 or more.

  The connection terminal group 40 includes a plurality of connection terminal groups classified according to the objects to be connected. That is, the connection terminal group 40 in the capacitor built-in wiring board 102 of the second invention has a first connection terminal group 41 and a second connection terminal group 42. Among these, the first connection terminal group 41 is a connection terminal group that is connected to the first capacitor function unit 221 of the capacitor function unit 22 and can be electrically connected to the processor core unit 901. Further, the second connection terminal group 42 is a connection terminal that is connected to the second capacitor function unit 222 of the capacitor function unit 22 and can be electrically connected to another circuit unit 902 different from the processor core unit 901. A group.

  The arrangement relationship of these connection terminal groups is such that the second connection terminal group 42 is arranged more outward than the first connection terminal group 41 on the outer surface of the capacitor portion 22 (the outer surface on the semiconductor element mounting side). Yes. That is, the second connection terminal group 42 is disposed on the side surface side of the capacitor unit 21 with respect to the first connection terminal group 41. The effect of this arrangement is the same as that in the first invention. Furthermore, the form is also as shown in FIGS. 4 to 6 and is the same as the first invention. The second capacitor function unit 222 includes a plurality of capacitor capacitance units, and the second connection terminal group 42 includes a plurality of second sub connection terminal groups 421 corresponding to the plurality of capacitor capacitance units. The same applies to what can be done.

  The shape, size, and the like of the capacitor portion 21 are not particularly limited. For example, the capacitor portion 21 is a flat plate shape having a rectangular shape (further, substantially square shape) in plan view, and has a thickness of 0.2 to 1.0 mm (preferably 0.4 to 0.8 mm). When the thickness is in the range of 0.2 to 1.0 mm, the overall strength of the wiring board with a built-in capacitor can be reduced while being sufficiently obtained. The capacitor unit 21 is preferably accommodated in a position directly below the semiconductor element 90 in the capacitor built-in wiring board 102.

The capacitor-embedded wiring substrate 10 (102) of the second invention has a semiconductor element 90 mounted thereon.
The “semiconductor element (90)” includes a processor core unit 901 and another circuit unit 902 different from the processor core unit 901. The processor core unit is a circuit capable of performing arithmetic processing. Only one processor core unit 901 may be provided in the semiconductor element 90, or two or more processor core units 901 may be provided. Examples of other circuits include a memory circuit unit, an I / O circuit unit, an A / D conversion circuit, a D / A conversion circuit, an operational amplifier unit, a PLL circuit unit, and a filter circuit unit. These may use only 1 type and may use 2 or more types together. Moreover, each circuit part may have only one and may have two or more.

Therefore, as the semiconductor element 90, for example, a semiconductor element having at least two kinds of circuit parts, that is, a processor core part and an I / O circuit part, and at least three kinds of a processor core part, a memory circuit part, and an I / O circuit part. The semiconductor element etc. which have these circuit parts are mentioned. The I / O circuit section is as described above.
The mounting method of the semiconductor element 90 on the surface (semiconductor element mounting side) of the capacitor built-in wiring board 102 is not particularly limited, and for example, flip chip mounting can be used.

[3] Wiring board with semiconductor element Each of the wiring boards 10 (101 and 102) with built-in capacitors according to the present invention is mounted with a semiconductor element 90, respectively. Among the wiring boards with semiconductor elements 90 in a state where the semiconductor elements 90 are mounted, the wiring board with semiconductor elements using the wiring board 101 with a built-in capacitor according to the first invention is:
A first semiconductor element 91 having a processor core portion 911, another semiconductor element 92 different from the first semiconductor element 91, and a built-in capacitor on which the first semiconductor element 91 and the other semiconductor element 92 are mounted A wiring board with a semiconductor element comprising: a wiring board 101;
The capacitor-embedded wiring substrate 101 includes a substrate core portion 20, a capacitor portion 21 accommodated in the substrate core portion 20, the first semiconductor element 91 and the other semiconductor elements 92, and at least the capacitor A build-up unit 30 stacked on the unit 21;
The capacitor unit 21 includes a plurality of capacitor function units 22, and includes a connection terminal group 40 including a plurality of connection terminals 4 connected to the capacitor function units 22 and led out to the outer surface of the capacitor unit 21. Prepared,
The connection terminal group 40 includes a first connection terminal group 41 connected to the first capacitor function unit 221 of the capacitor function unit 22 and electrically connected to the first semiconductor element 91, and the capacitor A second connection terminal group 42 connected to the second capacitor function unit 222 of the function unit 22 and electrically connected to the other semiconductor element 92;
The second connection terminal group 42 is disposed on the outer surface of the capacitor portion 21 on the outer side with respect to the first connection terminal group 41.
The above description can be applied as it is to each component in the wiring board with a semiconductor element.

On the other hand, a wiring board with a semiconductor element using the wiring board with a built-in capacitor according to the second invention is:
A wiring board with a semiconductor element, comprising: a semiconductor element 90 having a processor core unit 901 and a circuit unit 902 other than the processor core unit 901; and a capacitor built-in wiring board 102 on which the semiconductor element 90 is mounted.
The capacitor-embedded wiring substrate 102 includes a substrate core portion 20, a capacitor portion 21 accommodated in the substrate core portion 20, and a build-up portion on which the semiconductor element 90 is mounted and stacked on at least the capacitor portion 21. 30, and
The capacitor unit 21 includes a plurality of capacitor function units 22, and includes a connection terminal group 40 including a plurality of connection terminals 4 connected to the capacitor function units 22 and led out to the outer surface of the capacitor unit 21. Prepared,
The connection terminal group 40 includes a first connection terminal group 41 connected to the first capacitor function unit 221 of the capacitor function unit 22 and electrically connected to the processor core unit 901, and the capacitor function unit. 22, a second connection terminal group 42 connected to the second capacitor function unit 222 and connected to the other circuit unit 902,
The second connection terminal group 42 is disposed on the outer surface of the capacitor portion 21 on the outer side with respect to the first connection terminal group 41.
The above description can be applied as it is to each component in the wiring board with a semiconductor element.

Hereinafter, each capacitor built-in wiring board of the first invention and the second invention will be described in detail by way of examples.
[First Embodiment] (See FIGS. 1, 3, 4, 8, 9, and 10)
FIG. 1 is a schematic cross-sectional view showing an embodiment of a capacitor built-in wiring board 101 (10) of the first invention. The wiring board 101 has one semiconductor element 91 (90) having a processor core portion 911 and an I / O circuit portion on the upper surface side, and a semiconductor element 92 (90 having a memory circuit portion and an I / O circuit portion). ) Are two interposer substrates that can be mounted via the connection terminals 311a (solder bumps) and are mounted on the mother board 100 (see FIG. 3) via the connection terminals 311b (solder bumps) on the lower surface side.

The wiring board 102 includes a substrate core (made of glass epoxy) 20, an upper surface side buildup portion 30 a stacked on the upper surface side (the semiconductor element 90 mounting side) of the substrate core 20, and a lower surface side (motherboard 100) of the substrate core 20. And a lower surface side build-up portion 30b laminated on the connection side).
Each build-up portion 30 (30a and 30b) includes a conductor layer 31 (31a and 31b, which includes an interlayer conductor layer, vias, surface metal terminal pads, solder bumps 311a, etc.) and an interlayer insulating layer 32 (32a and 31b). 32b) and a solder resist layer 321 (321a and 321b) as the outermost layer.

In addition, the substrate core 20 includes a storage portion 201 having a rectangular shape in a plan view for storing the capacitor portion 21 penetrating the front and back surfaces. The capacitor unit 21 is housed in the housing unit 201. The capacitor unit 21 is housed at a position directly below the semiconductor elements 91 and 92 in the capacitor built-in wiring board 101.
Further, the gap between the housing part 201 and the capacitor part 21 is filled with a filler 204 mainly composed of epoxy resin. The filler 204 functions to absorb the stress so as to fix the capacitor unit 21 to the substrate core 20 and to suppress the stress due to thermal and mechanical deformation of the wiring substrate 101 from affecting the capacitor unit 21. Also have.

The substrate core 20 is provided with a plurality of through-hole conductors 202 penetrating therethrough. The through-hole conductor 202 is electrically connected to the upper surface side and the lower surface side of the substrate core 20. The through-hole conductor 202 is a cylindrical conductor, and the inside thereof is filled with a hardened filler 203 (epoxy resin).
The upper and lower surfaces of the substrate core 20 are electrically connected by through-hole conductors 202, and include a conductor layer formed by patterning the copper layers on the front and back surfaces of the double-sided copper-clad laminate.
The substrate core 20 has a thermal expansion coefficient {average value of measured values between 0 ° C. and glass transition temperature (Tg)} in the plane direction (XY direction) of about 10 to 15 ppm / ° C.

The upper surface side build-up part 30a has two resin insulation layers 32a (interlayer insulation layers) made of epoxy resin and a conductor layer 31a made of copper. Further, a solder resist layer 321a is formed on the outermost layer excluding the connection terminal 311a. The thermal expansion coefficient of the upper surface side buildup part 30a {the average value of the measured values between 30 ° C and the glass transition temperature (Tg)} is about 30 to 40 ppm / ° C, specifically about 35 ppm / ° C. is there.
The lower surface side build-up portion 30b has two resin insulation layers 32b (interlayer insulation layers) made of epoxy resin and a conductor layer 31b made of copper. Further, a solder resist layer 321b is formed on the outermost layer excluding the connection terminal 311a. The thermal expansion coefficient {which is an average value of the measured value between 30 ° C. and the glass transition temperature (Tg)} of the lower surface side buildup portion 30b is about 30 to 40 ppm / ° C., specifically about 35 ppm / ° C. is there.

  The capacitor part 21 accommodated in the accommodating part 201 of the substrate core 20 is connected in parallel to the power supply conductors of the semiconductor elements 91 and 92 and functions as a decoupling capacitor. The capacitor portion 21 has a substantially square shape with a length of 6.0 mm, a width of 6.0 mm, and a thickness of 0.8 mm. Further, the capacitor 21 has a taper of C0.6 at each of the four corners, so that concentration of thermal stress on the corners is suppressed.

  As shown in FIGS. 8 to 10, the capacitor unit 21 is a so-called via array type ceramic capacitor, and is connected to a ground electrode layer 224a (nickel layer) and a power supply electrode via a ceramic dielectric layer 223 (barium titanate). Layers 224b (nickel layers) are alternately stacked. The thermal expansion coefficient of the capacitor portion 21 (which is an average value of measured values between 30 to 250 ° C.) is an intermediate value between the thermal expansion coefficient of the semiconductor elements 91 and 92 and the thermal expansion coefficient of the build-up portions 30a and 30b. It is preferably adjusted, and in this embodiment, it is about 8 to 12 ppm / ° C., specifically, adjusted to about 9.5 ppm / ° C.

The capacitor unit 21 has two capacitor function units 221 and 222.
The capacitor function part 221 is provided with ground vias 225 and power supply vias 226 that are mainly made of nickel in a lattice shape (array shape) in a plan view while penetrating in the thickness direction. The ground via 225 penetrates (insulates) each power electrode layer 224b and electrically connects the ground electrode layers 224a to each other. The power supply via 226 penetrates (insulates) each ground electrode layer 224a and electrically connects the power supply electrode layers 224b to each other.

Each of these vias 225 and 226 is led out to the surface of the capacitor portion 21 and exposed as the connection terminal 4. This connection terminal 4 constitutes a connection terminal group 40, a first connection terminal group 41 connected to the capacitor function unit 221, a second connection terminal group 42 connected to the capacitor function unit 222, It has.
In each of the connection terminal groups 41 and 42, the connection terminals 4 formed in a circle having a diameter of about 500 μm are arranged with a minimum pitch length of about 580 μm.
The connection terminal group 41 is electrically connected to the processor core part 911 of the semiconductor element 91 via the connection terminal 311a on the upper surface side of the capacitor built-in wiring board 101. On the other hand, the connection terminal group 42 is electrically connected to the semiconductor element 92 via the connection terminal 311a on the upper surface side of the capacitor built-in wiring board 101.

Further, as shown in FIG. 3, the capacitor built-in wiring board 10 (101) is mounted on the mother board 100 through the connection terminals 311b on the lower surface side (solder bumps).
When mounted in this way, electricity is applied from the mother board 100 side, and a voltage is applied between the ground electrode layer 225 and the power supply electrode layer 224b, whereby the ground electrode layer 224a and the power supply electrode layer 224b. Charges that are opposite to each other are accumulated in the capacitor 21, and the capacitor 21 functions as a capacitor.
In the capacitor function units 221 and 222, the ground via 225 and the power supply via 226 are disposed adjacent to each other, and the directions of the currents flowing through the ground via 225 and the power supply via 226 are set to be opposite to each other. Has been. Thereby, the inductance component is reduced.

Second Embodiment (See FIGS. 2, 4, 8, 9, and 10)
FIG. 2 is a schematic sectional view showing an embodiment of the capacitor built-in wiring board 102 (10) of the second invention. The wiring board 102 has, on the upper surface side, a semiconductor element having three circuits: a processor core unit 901, an input circuit that inputs to the processor core unit 901, and an output circuit that outputs from the processor core unit 901. 90 is an interposer substrate that can be mounted on the motherboard 100 (see FIG. 3) on the lower surface side through the connection terminals 311b (solder bumps). .
And the connection terminal 4 comprises the connection terminal group 40, and is provided with the 1st connection terminal group 41 connected to the capacitor function part 221, and the 2nd connection terminal group 42 connected to the capacitor function part 222. The connection terminal group 41 is electrically connected to the processor core portion 901 of the semiconductor element 90 via the connection terminal 311a on the upper surface side of the capacitor built-in wiring board 102. On the other hand, the connection terminal group 42 is electrically connected to the input circuit portion and the output circuit portion of the semiconductor element 90 via the connection terminal 311 a on the upper surface side of the capacitor built-in wiring board 102.
Other configurations and the like are the same as those in the first embodiment, and the same operational effects can be obtained.

The schematic sectional drawing which shows an example of the wiring board with a built-in capacitor of 1st invention. The schematic sectional drawing which shows an example of the wiring board with a built-in capacitor of 2nd invention. The schematic sectional drawing which shows the usage example of a wiring board with a built-in capacitor. The schematic plan view which shows the example of arrangement | positioning of the connection terminal group in the wiring board surface with a built-in capacitor. The schematic plan view which shows the example of arrangement | positioning of the connection terminal group in the wiring board surface with a built-in capacitor. The schematic plan view which shows the example of arrangement | positioning of the connection terminal group in the wiring board surface with a built-in capacitor. The schematic plan view which shows the example of arrangement | positioning of the connection terminal group in the wiring board surface with a built-in capacitor. The schematic sectional drawing which shows an example of a capacitor part. The schematic plan view which shows an example of the connection state of the conductor layer for ground in a capacitor | condenser part, and a via | veer. The schematic plan view which shows an example of the connection state of the conductor layer for power supplies in a capacitor part, and a via.

Explanation of symbols

10, 101 and 102; wiring board with built-in capacitor,
20; Substrate core, 201; receiving portion, 204; filler, 202; through-hole conductor, 203;
21; Capacitor part, 221; Capacitor function part (capacitor function part for processor core part), 222; Capacitor function part (capacitor function part for other semiconductor elements, for other circuits), 223; Ceramic dielectric Layer, 224a; ground electrode layer, 224b; power supply electrode layer, 225; ground via, 226; power supply via, 4; connection terminal (connection terminal on the semiconductor element side), 40; connection terminal group, 41; 1 connection terminal group, 42; second connection terminal group, 421; sub connection terminal group (second sub connection terminal group),
30; Build-up part, 30a; Upper surface side build-up part, 30b; Lower surface side build-up part, 31a and 31b; Conductor layer, 311a and 311b; Connection terminal (connection terminal on the surface of the capacitor built-in wiring board), 32a and 32b; Interlayer insulating layers, 321a and 321b; solder resist layers;
90, 91 and 92; semiconductor elements, 901 and 911; processor core part, 902; other circuit part, 100; motherboard.

Claims (5)

A substrate core portion, a capacitor portion accommodated in the substrate core portion, a first semiconductor element having a processor core portion, and another semiconductor element different from the first semiconductor element can be mounted, and at least the capacitor A built-in capacitor wiring board comprising a build-up part laminated on the part,
The capacitor unit includes a plurality of capacitor function units, and includes a connection terminal group including a plurality of connection terminals connected to the capacitor function units and led to the outer surface of the capacitor unit,
The connection terminal group includes a first connection terminal group connected to a first capacitor function unit of the capacitor function units and electrically connectable to the first semiconductor element; and A second connection terminal group connected to the second capacitor function part and electrically connectable to the other semiconductor element,
The wiring board with a built-in capacitor, wherein the second connection terminal group is disposed on the outer surface of the capacitor portion on the outer side with respect to the first connection terminal group. A semiconductor element having a substrate core portion, a capacitor portion accommodated in the substrate core portion, and a processor core portion and other circuit portions other than the processor core portion can be mounted, and is stacked on at least the capacitor portion. A capacitor built-in wiring board comprising a build-up unit,
The capacitor unit includes a plurality of capacitor function units, and includes a connection terminal group including a plurality of connection terminals connected to the capacitor function units and led to the outer surface of the capacitor unit,
The connection terminal group includes a first connection terminal group that is connected to the first capacitor function unit of the capacitor function units and can be electrically connected to the processor core unit, and a second of the capacitor function units. A second connection terminal group that is connected to the capacitor function section and connectable to the other circuit section.
The wiring board with a built-in capacitor, wherein the second connection terminal group is disposed on the outer surface of the capacitor portion on the outer side with respect to the first connection terminal group.   3. The capacitor built-in wiring board according to claim 1, wherein the second connection terminal group is disposed on the outer surface of the capacitor portion so as to surround the first connection terminal group.   4. The second capacitor function section includes a plurality of capacitor capacitance sections, and the second connection terminal group includes a plurality of second sub connection terminal groups corresponding to the plurality of capacitor capacitance sections. The capacitor built-in wiring board according to any one of the above.   3. The capacitor built-in wiring board according to claim 2, wherein the other circuit portion is a memory circuit portion.

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