JP2008261942A - Light source device, projector optical system, and projector - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light source device which outputs a green beam and which is downsized, a projector optical system, and a projector. <P>SOLUTION: The light source device M1 is equipped with a semiconductor laser element 2 to output an infrared laser beam and a polarization direction inverting part 4 with an optical waveguide 5 formed thereon. The semiconductor laser element 2 is capable of direct modulation. The infrared laser beam output from the semiconductor laser element 2 is supplied to the optical waveguide 5 of the polarization direction inverting part 4. Because the polarization direction inverting part 4 is a quasi-phase matching wavelength conversion element, it converts the infrared laser beam into the second harmonic, i.e. the green beam. Also the green beam is output in accordance with intensity and modulation speed of the infrared laser beam. Consequently exterior modulator etc. is made unnecessary and the light source device is downsized. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a light source device that outputs green light, and a projector optical system and a projector device including the light source device.

In recent years, small projectors that can be mounted on portable devices such as notebook computers have been developed. As one of such projectors, a laser projector using a laser beam as a light source is known as described in Patent Document 1, for example.
JP 2002-328428 A

  By the way, the laser projector of Patent Document 1 outputs a light source device that outputs red light, a light source device that outputs green light, and blue light in order to obtain red, green, and blue light that are the three primary colors of light. It is conceivable to provide each of the light source devices. As a light source device that outputs red light or blue light, a semiconductor laser element that outputs red laser light and a semiconductor laser element that outputs blue laser light have been put into practical use. On the other hand, as a light source device that outputs green light, a semiconductor laser element that outputs green laser light has not yet been put into practical use. What is put into practical use is that an LD-pumped YAG laser is used to generate a double wave. Output type.

  In a laser projector, it is necessary to modulate a laser beam in a range of several to several tens of MHz. However, since the LD-excited YAG laser has a short inversion distribution lifetime, the LD-excited YAG laser can only follow the modulation signal of the excitation LD up to several kHz. Therefore, if a YAG laser type light source device is used as a light source device for outputting green light in a laser projector, an external modulator is required. Acousto-optic elements (referred to as AO elements) and electro-optic elements (referred to as EO elements) are known as external modulators, but since these are relatively large in size, it is difficult to reduce the size of the light source device. .

  Accordingly, an object of the present invention is to provide a compact light source device, projector optical system, and projector device that can output green light.

  A light source device according to the present invention includes a semiconductor laser element that outputs light having a central wavelength in the wavelength range of 1020 to 1110 nm, an optical waveguide that guides and outputs light output from the semiconductor laser element, and an optical waveguide A polarization direction reversing portion provided around the optical waveguide portion and periodically reversing the polarization direction along the direction in which the optical waveguide extends, and capable of emitting light belonging to a wavelength range of 510 to 55 nm. It is a feature.

  The present invention includes a semiconductor laser element that outputs infrared laser light. As such a semiconductor laser device, a device capable of direct modulation at a relatively high speed has already been put into practical use. Infrared laser light output from the semiconductor laser element is supplied to the optical waveguide section. A quasi-phase-matching wavelength conversion element is formed in the vicinity of the polarization direction inversion portion that is provided around the optical waveguide portion and periodically reverses the polarization direction along the direction in which the optical waveguide portion extends. Laser light can be converted into a double wave, that is, green light. Further, green light corresponding to the intensity and modulation speed of infrared laser light can be output.

  Thus, in the present invention, green light can be obtained from directly modulated infrared laser light. The modulation speed and intensity of the green light obtained are in accordance with the modulation speed and intensity of the infrared laser light. Therefore, an external modulator or the like is not necessary, and the light source device can be downsized.

  In the light source device of the present invention, it is preferable to further include a monitor light receiving element that receives a part of the light output from the semiconductor laser element. In this case, the intensity of light output from the semiconductor laser element can be monitored.

  In the light source device of the present invention, it is also preferable that the semiconductor laser element includes a GaAs substrate and an active layer formed on the GaAs substrate, and the active layer includes any of GaInAs, GaInNAs, and InAs. In this case, it is possible to obtain a semiconductor laser element that has good temperature characteristics and can be designed with a higher value of the relaxation frequency of direct modulation as compared with a semiconductor laser element whose active layer is made of an InP-based material.

  In addition, a projector optical system according to the present invention includes a first light source having the light source device described above, a second light source having a semiconductor laser element that outputs light having a central wavelength in the wavelength range of 460 to 470 nm, and a wavelength range of 605. A third light source having a semiconductor laser element that outputs light having a central wavelength of ˜780 nm, and optical multiplexing means for combining and outputting the light output from the first, second, and third light sources; And a micromirror that projects the light output by the optical multiplexing means so as to be reflected and scanned on the screen. By providing the light source device described above, the projector optical system can be made small.

  In the projector optical system of the present invention, it is preferable that the optical multiplexing means is an optical waveguide coupler. In this case, the projector optical system can be further miniaturized.

  In the projector optical system of the present invention, it is also preferable that the micromirror is a MEMS mirror supported so as to be swingable about two substantially orthogonal axes. In this case, the projector optical system can be made smaller and capable of high speed operation.

  The projector optical system of the present invention further includes a base having an element mounting surface, and the first, second, and third light sources and the optical multiplexing means are mounted on the element mounting surface of the base. It is also preferable. Thus, by integrating the first to third light sources and the optical multiplexing means on the element mounting surface, the projector optical system can be further reduced in size.

  According to another aspect of the invention, there is provided a projector apparatus including: the above-described projector optical system; a receiving unit that receives an image signal; and an image signal received by the receiving unit that is a semiconductor laser element of first, second, and third light sources. It is characterized by comprising conversion means for converting into a modulation signal for modulating the intensity of light output from each and a control signal for controlling the direction of the micromirror, and outputting it. By providing the projector optical system described above, the projector device can be reduced in size.

  According to the present invention, it is possible to obtain a small light source device that can output green light. Further, by providing such a light source device, the projector optical system and the projector device can be made compact.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of a light source device, a projector optical system, and a projector device according to the invention will be described with reference to the drawings.

  First, the light source device according to the present invention will be described. FIG. 1 is a perspective view showing a light source device according to the present invention. As shown in FIG. 1, the light source device M <b> 1 includes a semiconductor laser element 2, a polarization direction inversion unit 4, an optical waveguide 5 that is an optical waveguide unit, a monitoring light receiving element 6, and a mounting member 8. Yes.

  The semiconductor laser element 2 is a distributed feedback laser diode that outputs infrared light, and can be directly modulated. The semiconductor laser element 2 oscillates in the TE mode and outputs a laser beam having a center wavelength of about 1063 nm. Note that the center wavelength is not limited to this, and may be in the wavelength range of 1020 to 1110 nm. The reflectance at the front emission surface of the semiconductor laser element 2 is about 5%, and the reflectance at the rear emission surface is about 97%. The semiconductor laser element 2 has an element length of 330 μm, an element width of 280 μm, and an element thickness of 150 μm.

  The semiconductor laser element 2 has a GaAs substrate and an active layer formed on the GaAs substrate and containing GaInNAs / GaInP. Note that the active layer is not limited to this, and any one of GaInAs, GaInNAs, and InAs may be included. The semiconductor laser element 2 having such an active layer has better temperature characteristics than a semiconductor laser element in which the active layer is made of an InP-based material. In addition, the relaxation frequency of direct modulation can be designed with a higher value. The active layer has a strain compensated quantum well structure and forms an optical waveguide. The optical waveguide formed by the active layer has a width of about 2 μm and a thickness of about 0.35 μm.

  An optical waveguide 5 is provided so as to be adjacent to the semiconductor laser element 2. A polarization direction reversal unit 4 is provided around the optical waveguide 5, and the polarization direction reversal unit 4 is also adjacent to the semiconductor laser element 2. The semiconductor laser element 2 is located on one end side of the optical waveguide 5. The optical waveguide 5 having the polarization direction inversion section 4 around it forms a quasi phase matching (referred to as QPM) type wavelength conversion element in which the polarization direction is periodically inverted. The polarization direction inversion part 4 is made of what is called MgO: PPLN. The polarization direction reversal unit 4 is manufactured by applying a voltage to a lithium niobate (LN) substrate to which X-cut magnesium oxide (MgO) is added to reverse the polarization direction alternately and periodically. . Arrows A and B in FIG. 1 indicate the polarization direction. In the polarization direction reversal unit 4, portions where the polarization direction is reversed are periodically formed along the direction in which the optical waveguide 5 extends. The length of the polarization direction inversion part 4 is about 1 mm, the width is about 500 μm, and the thickness is about 350 μm.

  Infrared light output from the semiconductor laser element 2 is supplied to one end of the optical waveguide 5, and double light of the infrared light, that is, green light L <b> 1 is output from the other end of the optical waveguide 5. The optical waveguide 5 has a width of about 3 μm and a thickness of about 1 μm.

  From the viewpoint of wavelength conversion efficiency, the direction in which the portion where the polarization direction is reversed is periodically formed in the polarization direction reversal unit 4 is along the direction in which the optical waveguide extends as shown in FIG. preferable. However, the present invention is not limited to this, and the optical waveguide only needs to extend in a direction crossing the periodic structure of the polarization direction inversion portion. Further, the polarization direction inversion part does not necessarily have to exist uniformly over the entire circumference of the optical waveguide.

  Furthermore, the polarization direction reversal part only needs to be close to the optical waveguide to such an extent that an optical electric field exists in the polarization direction reversal part when light is guided by the optical waveguide. That is, it may not be in direct contact with the optical waveguide, and for example, a cladding layer may be interposed between the optical waveguide and the polarization direction inversion portion.

  The polarization direction inversion part and the optical waveguide do not need to have separate structures, and light may be directly guided so as to penetrate the periodic structure of the polarization direction inversion part. More specifically, light is directly incident on one end of the polarization direction inversion part and emitted from the other end, or a through hole is formed between one end and the other end of the polarization direction inversion part. The light may be guided. At this time, a clad layer may be formed between the polarization direction reversal part and the optical waveguide.

  The monitor light receiving element 6 detects a part of the light emitted from the semiconductor laser element 2. More specifically, the monitor light receiving element 6 is a photodiode and is arranged to receive light output from the rear emission surface of the semiconductor laser element 2. By providing the light receiving element 6 for monitoring, the intensity of the light output from the semiconductor laser element 2 can be monitored. Further, if the drive current supplied to the semiconductor laser element 2 is feedback controlled based on the photocurrent output from the monitoring light receiving element 6, the intensity of the light output from the semiconductor laser element 2 can be kept constant. Is possible.

  The mounting member 8 is a portion on which the semiconductor laser element 2, the polarization direction reversing unit 4, the optical waveguide 5, and the monitoring light receiving element 6 are mounted, and is made of a material having sufficient heat dissipation such as copper. ing. In addition, it is good also as providing the Peltier element in the mounting member 8 in order to improve heat dissipation. The semiconductor laser element 2, the polarization direction reversal unit 4, the optical waveguide 5, and the monitoring light receiving element 6 are installed on the mounting surface 8 a side of the mounting member 8. The mounting member 8 is provided with a plurality of external electrode pins 14. The electrode pins 14 are connected to the semiconductor laser element 2 and the monitoring light receiving element 6 through wires 16.

  A submount 12 is provided on the mounting surface 8 a, and the semiconductor laser element 2 is mounted on the submount 12. The submount 12 is for matching the height of the semiconductor laser element 2 with one end of the optical waveguide 5 and has a thickness of about 200 μm. The submount 12 is made of a material having good thermal conductivity such as silicon or aluminum nitride.

  The light source device M1 having the above configuration can be used as a CAN module. It can also be used as a pigtail module by combining with an optical fiber or the like.

  Next, the operation of the light source device M1 will be described. When a modulation signal is supplied from the electrode pin 14 to the semiconductor laser element 2, the center wavelength is about 1063 nm, and modulated infrared laser light is generated in the semiconductor laser element 2. Part of the generated infrared laser light is output from the rear emission surface of the semiconductor laser element 2. The light output from the rear emission surface is detected by the monitor light receiving element 6, and a photocurrent corresponding to the detected light intensity is output from the monitor light receiving element 6 to the electrode pin 14 via the wire 16.

  On the other hand, of the infrared laser light generated by the semiconductor laser element 2, the light output from the front emission surface of the semiconductor laser element 2 is supplied to one end of the optical waveguide 5. Since the optical waveguide 5 and the surrounding polarization direction inversion unit 4 form a quasi phase matching type wavelength conversion element, the other end of the optical waveguide 5 outputs green light L1 having a center wavelength of about 532 nm. Thereby, the intensity | strength and modulation speed of the green light L1 become a thing according to the intensity | strength and modulation speed of an infrared laser beam. Thus, since the light source device M1 can output the green light L1 following the intensity and modulation speed of the infrared laser light, an external modulator or the like is not necessary.

  Next, the projector optical system according to the present invention will be described. FIG. 2 is a top view of the projector optical system according to the present invention. FIG. 3 is a side view of the light source module and the micromirror included in the projector optical system. As shown in FIG. 2, the projector optical system M <b> 2 includes a light source module 20, a lens module 44, and a micromirror 46.

  The light source module 20 includes a base 22, a green light source 24 (first light source), a blue light source 29 (second light source), a red light source 32 (third light source), and an optical multiplexer 35 (optical multiplexing means). ) And.

  The base 22 is made of a material having sufficient heat dissipation such as copper. As shown in FIG. 3A, the base 22 includes a flat upper portion 22a and a lower portion 22b formed with a plurality of irregularities. In the base 22, a plurality of projections and depressions are formed on the lower portion 22b, thereby increasing the surface area and improving heat dissipation. A green light source 24, a blue light source 29, a red light source 32, and an optical multiplexer 35 are mounted on the surface (element mounting surface) 22 c of the upper portion 22 a of the base 22. In this manner, by integrating the three light sources and the optical multiplexer 35 on the surface 22c of the base 22, the projector optical system M2 can be further reduced in size.

  The green light source 24 includes a polarization direction inversion unit 25 provided in the vicinity of the optical waveguide 26, a semiconductor laser element 27, and a submount 28. The polarization direction inversion unit 25, the semiconductor laser element 27, and the submount 28 are the same as the polarization direction inversion unit 4, the semiconductor laser element 2, and the submount 12 of the light source device M1 described above.

  The blue light source 29 includes a semiconductor laser element 30 and a submount 31. The semiconductor laser element 30 is a Fabry-Perot (FP) laser diode that outputs blue light and can be directly modulated. The semiconductor laser element 30 oscillates in the TE mode and outputs a laser beam having a center wavelength of about 462 nm. Note that the center wavelength is not limited to this, and may be in the wavelength range of 460 to 470 nm. The front emission surface of the semiconductor laser element 30 is a cleaved surface, and the rear emission surface is provided with a reflective coating or the like so that the reflectance is about 92%. The semiconductor laser element 30 has an element length of 400 μm, an element width of 260 μm, and an element thickness of 180 μm.

The semiconductor laser element 30 has an Al ₂ O ₃ substrate and an active layer formed on the Al ₂ O ₃ substrate and containing GaInN / AlGaN. The active layer has a quantum well structure having a compressive strain. The active layer forms an optical waveguide, which has a width of about 1 μm and a thickness of about 0.25 μm.

  Such a semiconductor laser device 30 is mounted on the submount 31. The submount 31 is for matching the height of the semiconductor laser element 30 with the optical multiplexer 35. The submount 31 is made of the same material as that of the submount 28.

  The red light source 32 includes a semiconductor laser element 33 and a submount 34. The semiconductor laser element 33 is a Fabry-Perot (FP) laser diode that outputs red light, and can be directly modulated. The semiconductor laser element 33 oscillates in the TE mode and outputs a laser beam having a center wavelength of about 633 nm. Note that the center wavelength is not limited to this, and may be in the wavelength range of 605 to 780 nm. The front emission surface of the semiconductor laser element 33 is a cleaved surface, and the rear emission surface is provided with a reflective coating or the like so that the reflectance is about 95%. The semiconductor laser element 33 has an element length of 300 μm, an element width of 250 μm, and an element thickness of 160 μm.

  The semiconductor laser element 33 has a GaAs substrate and an active layer formed on the GaAs substrate and containing AlGaInP / AlGaInP. The active layer has a quantum well structure having a compressive strain. The active layer forms an optical waveguide, and the optical waveguide has a width of about 1.2 μm and a thickness of about 0.3 μm.

  The semiconductor laser element 33 is mounted on the submount 34. The submount 34 is for matching the height of the semiconductor laser element 33 with the optical multiplexer 35. The submount 34 is made of the same material as the submounts 28 and 31.

  An optical multiplexer 35 is provided so as to face the green light source 24, the blue light source 29, and the red light source 32 described above. The optical multiplexer 35 is a part that multiplexes light output from the green light source 24, the blue light source 29, and the red light source 32. The optical multiplexer 35 is an optical waveguide type coupler, more specifically, a planar optical waveguide substrate. The optical multiplexer 35 is made of quartz glass doped with Ge and having a refractive index of 0.08%, and has a length of 20 mm, a width of 3 mm, and a thickness of 0.5 mm.

  The optical multiplexer 35 is adjacent to the semiconductor laser elements 30 and 33. Further, the optical multiplexer 35 is adjacent to the polarization direction inversion unit 25. The optical multiplexer 35 is substantially L-shaped when viewed from the main surface side, and the overall shape when the optical multiplexer 35 and the polarization direction reversing unit 25 are fitted is substantially rectangular.

  In the optical multiplexer 35, a first optical waveguide 38, a second optical waveguide 40, and a third optical waveguide 42 are formed. Light from the green light source 24 is supplied to one end of the first optical waveguide 38. Light from the blue light source 29 is supplied to one end of the second optical waveguide 40. Light from the red light source 32 is supplied to one end of the third optical waveguide 42.

  In the predetermined section 39, the first optical waveguide 38 and the second optical waveguide 40 are close enough to couple the light guided through one optical waveguide to the other optical waveguide. In the predetermined section 41, the third optical waveguide 42 and the second optical waveguide 40 are close enough to couple the light guided through one optical waveguide to the other optical waveguide. In these predetermined sections 39 and 41, a coupler is formed. The predetermined section 41 is located closer to the green light source 24, the blue light source 29, and the red light source 32 than the predetermined section 39. Therefore, the green light is combined with the light obtained by combining the blue light and the red light. Light obtained by combining the blue light, the red light, and the green light is output from the output end 43 of the second optical waveguide 40.

  In the predetermined section 39, the distance between the first optical waveguide 38 and the second optical waveguide 40 is about 5.1 μm. The portion excluding the predetermined section 39 is about 1.1 mm. In the predetermined section 41, the distance between the third optical waveguide 42 and the second optical waveguide 40 is about 5.0 μm. The portion excluding the predetermined section 41 is about 1.1 mm. The length of the predetermined section 39 is about 4.6 μm, and the length of the predetermined section 41 is about 2.4 μm. Of course, the first optical waveguide 38 and the second optical waveguide 40 in the predetermined section 39 and the third optical waveguide 42 and the second optical waveguide 40 in the predetermined section 41 are in direct contact with each other or integrated. Also good.

  The lens module 44 condenses the light L2 output from the light source module 20. The lens module 44 includes three lenses arranged in the order of a convex lens 44a, a concave lens 44b, and a convex lens 44c. The focal length of the lens module 44 is 60 cm, and the focal depth is 20 cm.

  The micromirror 46 is a portion that projects the light L2 output from the light source module 20 and then reflected by the lens module 44 so as to be reflected and scanned on a screen (not shown). As shown in FIG. 3B, the micromirror 46 is supported so as to be swingable around two substantially orthogonal axes. As this type of rocking mechanism, a mechanism using MEMS (micro electro mechanical system) technology using electrostatic force is suitable. More specifically, the micromirror 46 has a width of 20 mm, a height of 20 mm, and a depth of 8 mm. The micromirror 46 includes a mirror body 48, a vertical shaft 49, an inner frame 50, a horizontal shaft 51, an outer frame 52, and a mirror swing mechanism. The mirror body 48 is supported on a rotatable vertical shaft 49 attached to the inner frame 50. The inner frame 50 is supported by a rotatable horizontal shaft 51 attached to the outer frame 52.

  Next, the mirror swing mechanism will be described. The mirror oscillating mechanism has an electrode surface (not shown) facing the back surface of the micromirror 46. The mirror surface is opposed to the back surface of the micromirror 46 at a predetermined distance and is independent of the electrode surface. Four electrode portions 54 are provided. By individually energizing each electrode portion 54, an electrostatic attractive force is generated between the micromirror 46 and the electrode portion 54, and the vicinity of the portion facing the electrode portion 54 in the micromirror 46 is attracted to the electrode portion 54 side. It is done. As a result, the mirror main body 48 and the inner frame 50 are rotated about the vertical axis 49 and the horizontal axis 51, respectively, by the mirror swing mechanism. As a result, the mirror body 48 can be directed in any direction, so that the light L2 collected by the lens module 44 can be freely deflected. The operating speed of the vertical axis 49 is 100 Hz, and the operating speed of the horizontal axis 51 is 50 kHz. By using such a micromirror 46, the projector optical system M2 becomes even smaller and can operate at high speed.

  The projector optical system M2 having such a configuration combines the three colors of light generated by the green light source 24, the blue light source 29, and the red light source 32 with the optical multiplexer 35, and combines the combined light L2 with the lens module 44 and the micro light. Output through the mirror 46. Since each of the green light source 24, the blue light source 29, and the red light source 32 is small, the projector optical system M2 can be downsized.

  The projector optical system M2 is not limited to the above-described embodiment, and various modifications can be made.

  For example, as the optical multiplexer 35, in addition to the one shown in FIG. 1, an arrayed waveguide grating (AWG) type optical multiplexer / demultiplexer can be used. Further, the optical multiplexer 35 may be one using a dichroic mirror or a cross prism, or one using an optical fiber, instead of the planar optical waveguide substrate. However, from the viewpoint of miniaturization, a planar optical waveguide substrate is preferable. The micromirror 46 is not limited to the one having an oscillating mechanism by electrostatic force, and may be an electromagnetic force type, a mechanical type, or a type utilizing thermal deformation.

  Further, the projector optical system M2 may further include three monitor light receiving elements that monitor light output from the rear emission surfaces of the three semiconductor laser elements 27, 30, and 33.

  Next, an embodiment of the projector device according to the present invention will be described. FIG. 4 is a schematic configuration diagram of a projector apparatus according to the present invention. As shown in FIG. 4, the projector device M3 includes a receiving unit 54 (receiving unit), a converting unit 56 (converting unit), and a projector optical system M2.

  The receiving unit 54 receives an image signal from the outside, and outputs the received image signal to the conversion unit 56. The conversion unit 56 converts the image signal output from the reception unit 54 into a modulation signal and a control signal. Here, the modulation signal is a signal for modulating the intensity of the output light of the semiconductor laser elements 27, 30, and 33 included in the projector optical system M2. The control signal is a signal for controlling the direction of the micromirror 46. The converter 56 outputs the modulation signal and control signal obtained by the conversion to the projector optical system M2. The projector optical system M2 modulates the output light of the green light source 24, the blue light source 29, and the red light source 32 based on the received modulation signal, and deflects the micro mirror 46 based on the control signal. As a result, the image is displayed on the screen. The projector device M3 that operates in this manner is small in size because it includes the projector optical system M2.

It is a perspective view which shows the light source device which concerns on this invention. It is a top view of the projector optical system according to the present invention. It is a side view of the light source module and micromirror with which a projector optical system is provided. It is a schematic block diagram of the projector apparatus which concerns on this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS M1 ... Light source device, M2 ... Projector optical system, M3 ... Projector device, 4 ... Polarization direction inversion part, 5 ... Optical waveguide part (optical waveguide), 6 ... Light receiving element for monitoring, 8 ... Mounting member, 8a ... Mounting Surface, 14 ... Electrode pin, 16 ... Wire, 20, 26, 38, 40, 42 ... Optical waveguide, 22 ... Base, 24 ... Green light source, 25 ... Wavelength conversion substrate, 2, 27, 30, 33 ... Semiconductor laser element , 12, 28, 31, 34 ... submount, 29 ... blue light source, 32 ... red light source, 35 ... optical multiplexer, 43 ... output end, 44 ... lens module, 46 ... micromirror, 54 ... receiver, 56 ... Conversion part.

Claims (8)

A semiconductor laser element that outputs light having a central wavelength in the wavelength range of 1020 to 1110 nm;
An optical waveguide that guides and outputs the light output from the semiconductor laser element;
A polarization direction reversing portion provided around the optical waveguide portion and periodically reversing the polarization direction along the direction in which the optical waveguide portion extends;
With
A light source device capable of emitting light having a central wavelength in a wavelength range of 510 to 55 nm.   The light source device according to claim 1, further comprising a light receiving element for monitoring that receives a part of the light output from the semiconductor laser element.   3. The semiconductor laser device includes a GaAs substrate and an active layer formed on the GaAs substrate, and the active layer includes any one of GaInAs, GaInNAs, and InAs. The light source device described. A first light source comprising the light source device according to any one of claims 1 to 3,
A second light source having a semiconductor laser element that outputs light whose central wavelength belongs to a wavelength range of 460 to 470 nm;
A third light source having a semiconductor laser element that outputs light having a central wavelength in the wavelength range of 605 to 780 nm;
Optical multiplexing means for combining and outputting the light output from the first, second, and third light sources;
A micromirror that projects the light output by the optical multiplexing means so as to be reflected and scanned on the screen;
A projector optical system comprising:   5. The projector optical system according to claim 4, wherein the optical multiplexing means is an optical waveguide coupler.   6. The projector optical system according to claim 4, wherein the micromirror is a MEMS mirror supported so as to be swingable around two substantially orthogonal axes. A base having an element mounting surface;
The said 1st, 2nd and 3rd light source and the said optical multiplexing means are mounted on the said element mounting surface of the said base, The any one of Claims 4-6 characterized by the above-mentioned. Projector optical system. A projector optical system according to any one of claims 4 to 7;
Receiving means for receiving an image signal;
In order to control the orientation of the micromirror and the modulation signal for modulating the light output from each of the semiconductor laser elements of the first, second and third light sources from the image signal received by the receiving means Conversion means for converting to and outputting the control signal,
A projector apparatus comprising:

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