JP2008258441A - Substrate processing method, and substrate processor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processor for preventing any fine liquid lump which is generated on a substrate from remaining, and for preventing any fine spot which can be measured by a foreign matter inspection device from being generated, and for preventing any watermark which is generated because of any rinse liquid or remaining foreign matter from being generated, and for washing with rinse liquid and then drying various substrates. <P>SOLUTION: This substrate processing method includes: a substrate washing process for washing a substrate by making rinse liquid reach part of the whole face of the main surface of a substrate by a rinse liquid ejection nozzle head; a substrate drying process for rotating the substrate whose substrate washing process has ended at a low speed, and for moving the rinse liquid ejection nozzle head from the neighborhood of the center of the substrate to the outer periphery of the substrate while ejecting rinse liquid by the rinse liquid ejection nozzle head to eject rinse liquid from the substrate as a large liquid lump, and for drying the substrate; and a scattering process for rotating the substrate at a higher speed than that in the substrate drying process in order to scatter the rinse liquid remaining in the outer periphery of the substrate after the substrate drying process ends. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate processing technique in which various substrates such as a wafer for forming a semiconductor element, a glass substrate, and a ceramic substrate are washed with a rinsing liquid and then dried, and in particular, a minute liquid generated on the substrate. The substrate can be cleaned and dried without generating tiny spots that can be measured by a foreign substance inspection device and at the same time without generating a watermark caused by rinsing liquid or residual foreign substances. The present invention relates to a substrate processing method and a substrate processing apparatus.

  In general, as a means of drying treatment after cleaning the substrate, a technique (spin drying) in which the substrate is rotated and the liquid film is discharged from the main surface of the substrate by centrifugal force is used. In this method, the moisture on the substrate cannot be completely discharged, and as a result, generation of minute spots and watermarks cannot be suppressed.

In the conventional cleaning and drying processing method, a large amount of drying gas of several hundred NL / min is used, so that turbulent flow occurs, resulting in dispersion and reattachment of a large number of mist-like droplets. (For example, refer to Patent Document 1 and Patent Document 2). These remain as minute spots that can be measured by the foreign substance inspection apparatus. In addition, if the gas is ejected from the discharge port that is covered with a flat plate above the substrate and fixed in a closed space, the gas flows only in the direction in which it easily flows, and tends to be unevenly distributed on the substrate. Occurs. This drying unevenness causes a watermark.
Further, as another conventional method, there is a substrate processing technology that rotates at high speed while spraying an inert gas as a dry gas in a state where a liquid is piled up on the substrate. In this method, a water film is formed on the substrate. This produces a large number of relatively small liquid masses. Many liquid masses due to the division of the water film are likely to remain on the substrate depending on the size, and even if discharged, it becomes easy to reattach as many mist droplets due to turbulent flow due to high-speed rotation of the substrate. In addition, minute spots that can be measured by a watermark or a foreign substance inspection apparatus cause a decrease in yield (for example, see Patent Document 3).

  In general, if the substrate surface is hydrophilic, spin drying can form a uniform liquid film, and the liquid film can be gradually thinned and dried by centrifugal force. In the substrate processing in which the substrate is subjected to an etching process and the substrate is polished by polishing, the surface state of the substrate after the processing becomes hydrophobic. Unlike the hydrophilic substrate, this hydrophobic substrate does not form a uniform liquid film on the surface and tends to exist as a liquid mass. In particular, when moving to the outer periphery due to centrifugal force, many comparisons are made by dividing the water film. A minute liquid mass is generated, a small amount of silicon is dissolved in the liquid mass, and then dried and remains as minute spots that can be measured by a foreign substance inspection apparatus. If the entire substrate is hydrophobic, the liquid accumulated on the substrate is rotated at a low speed to prevent the generation of minute liquid masses while discharging moisture to the outer periphery of the substrate. Although the generation of minute liquid mass can be suppressed, the substrate that actually forms the device on the substrate often has a mixture of hydrophobic and hydrophilic surface portions. Moisture adheres and remains on the substrate as a thin film due to surface tension. Thus, silicon dissolves in the moisture adhering to the thin film, and then dried to form a watermark.

JP 11-330039 A Japanese Patent Laid-Open No. 11-274135 JP 2006-66579 A

That is, in the conventional cleaning and drying processing method, the minute spots that can be measured by the foreign matter inspection apparatus are those that can be separated from a large liquid mass during the movement of the rinsing liquid, or liquid on the substrate while wiping the dry gas. The main causes are considered to be that the accumulated rinse liquid can be dispersed in a spin-dried pattern with high-speed rotation, or that it is dispersed and discharged to the outer periphery of the substrate, but adheres again to the substrate surface due to turbulent flow around the substrate. It has been. In order to eliminate the occurrence of minute spots that can be measured by the foreign substance inspection apparatus, it is necessary to prevent these minute liquid masses from being generated or remaining on the substrate.
In addition, the water mark is thought to be mainly due to moisture adhering to the hydrophilic surface portion mixed on the substrate in the form of a thin film, and the silicon component remains as the moisture evaporates in the substrate drying process after silicon dissolves in the moisture. It has been.

  Therefore, the problem to be solved by the present invention is to prevent a minute liquid lump remaining on the substrate from being generated, not to generate a minute spot that can be measured by a foreign matter inspection apparatus, and at the same time, due to a rinse liquid and a remaining foreign matter. An object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of cleaning and drying a substrate without generating a generated watermark.

In order to solve the above problems, the present invention provides a substrate processing method for drying a substrate after washing the substrate with a rinsing liquid.
A substrate cleaning process for cleaning the substrate by rinsing the rinse liquid from the rinsing liquid discharge nozzle head over the entire surface of the substrate main surface;
The rinse liquid discharge nozzle head gradually rotates from the vicinity of the center of the substrate to the outer periphery of the substrate while discharging the rinse liquid from the rinse liquid discharge nozzle head at the same time as rotating the substrate after the substrate cleaning process is completed. A substrate drying step of discharging the rinse liquid as a large liquid mass from the substrate and drying the substrate;
A scattering step of rotating the substrate at a higher speed than in the substrate drying step in order to scatter the rinse liquid remaining on the outer periphery of the substrate after the substrate drying step;
It is another object of the present invention to provide a substrate processing method.

  A second problem to be solved is that in the substrate drying step, the substrate after the substrate cleaning step is rotated at a low speed, and at the same time, near the center of the substrate while discharging the rinse liquid from the rinse liquid discharge nozzle head. The rinse liquid discharge nozzle head is gradually moved from the substrate to the outer periphery of the substrate, the rinse liquid is discharged as a large liquid mass from the substrate, the substrate is dried, and at a place away from the rinse liquid discharge nozzle head. A drying gas discharge nozzle head is provided, and a drying gas discharge step is provided in which a drying gas is sprayed from the drying gas discharge nozzle head onto the substrate to dry the rinse liquid remaining on the main surface of the substrate. An object of the present invention is to provide a substrate processing method according to claim 1.

  A third problem to be solved is to provide a substrate processing method according to claim 2, wherein the drying gas discharge nozzle head is fixed on the same track as the rinse liquid discharge nozzle head. .

  The fourth problem to be solved is the substrate processing method according to claim 2, wherein the drying gas discharge nozzle head is scanned in a different orbit from the rinse liquid discharge nozzle head. There is to do.

The fifth solving problems is to provide a substrate processing method according to claim 2, the area of the drying gas discharge port, characterized in that a 0.2mm ² ~13mm ^2.

  A sixth problem to be solved is to provide a substrate processing method according to claim 2, wherein the drying gas discharged from the drying gas discharge port is 100 NL / min or less.

  A seventh problem to be solved is that the angle at which the drying gas hits the interface between the rinse liquid and the substrate can be adjusted by adjusting the discharge angle of the drying gas discharge port. An object of the present invention is to provide a substrate processing method according to claim 2.

  An eighth problem to be solved is that the discharge direction of the drying gas can be controlled in order to adjust the angle at which the drying gas hits the interface between the rinse liquid and the substrate. An object of the present invention is to provide a substrate processing method according to Item 2.

A ninth problem to be solved is a substrate processing apparatus for drying a substrate after cleaning the substrate with a rinsing liquid.
Substrate rotating means for holding and rotating the substrate;
Substrate rotation control means for controlling the number of rotations of the substrate;
A substrate cleaning means for cleaning the substrate by discharging a rinse liquid from a rinse liquid discharge nozzle to the main surface of the held substrate;
Substrate drying means for slowing down the rotation of the substrate after completion of the substrate cleaning process by the substrate cleaning means, moving to the outer periphery of the substrate while discharging the rinse liquid from the vicinity of the center of the substrate, and discharging the rinse liquid as a water mass,
It is another object of the present invention to provide a substrate processing apparatus.

A tenth problem to be solved is a substrate processing apparatus for drying a substrate after cleaning the substrate with a rinse liquid.
Substrate rotating means for holding and rotating the substrate;
Substrate rotation control means for controlling the number of rotations of the substrate;
Substrate cleaning means for discharging the rinse liquid from the rinse liquid discharge nozzle to the main surface of the held substrate and cleaning the substrate;
A drying gas discharge means for discharging a drying gas to the main surface of the held substrate;
Substrate drying means for slowing down the rotation of the substrate after completion of the substrate cleaning process by the substrate cleaning means, moving to the outer periphery of the substrate while discharging the rinse liquid from near the center of the substrate, discharging the rinse liquid as a water mass, and drying the substrate ,
A gas discharge means for discharging a drying gas from a drying gas discharge nozzle head provided near the discharge port of the rinse liquid at the same time in the substrate drying means to dry moisture remaining on the main surface of the substrate;
It is another object of the present invention to provide a substrate processing apparatus.

According to the present invention, the substrate after the substrate cleaning step is rotated at a low speed, and at the same time, the rinse liquid is ejected from the vicinity of the center of the substrate to the outer periphery of the substrate while discharging the rinse liquid from the nozzle head. The rinse liquid discharge nozzle head is moved, the rinse liquid is discharged from the substrate as a large liquid mass, and the substrate is dried, so that the rinse liquid spread over the substrate is large while suppressing the generation of minute liquid mass. As it is discharged to the outer periphery of the substrate, a fine liquid mass is not generated from a large liquid mass, a fine spot that can be measured by a foreign substance inspection apparatus does not occur, and good drying can be performed, and at a low speed rotation As a result, the dispersion and scattering of the liquid mass at high rotation, which has been a problem until now, can be reduced, and the occurrence of watermarks can be suppressed. The substrate can be a good drying performed.
According to the present invention, after the liquid mass remaining on the main surface of the substrate is completely removed in this way, only the minute deposits adhered to the end surface of the substrate are scattered by rotating the substrate at a high speed. I can do it.
In the case of a substrate having both hydrophilicity and hydrophobicity on the surface, moisture adheres to the hydrophilic surface portion mixed on the substrate in the form of a thin film, and after the silicon is dissolved in the moisture, the moisture evaporates in the substrate drying process. Since the silicon component remains, a watermark may be generated. In such a case, while rotating the substrate at a low speed, the rinse liquid is discharged and gradually from the vicinity of the center of the substrate to the outer periphery of the substrate. The rinse liquid discharge nozzle head is moved, and the rinse liquid is discharged from the substrate as a large liquid mass, and the substrate is dried. At the same time, a drying gas is blown onto the substrate, and the main surface of the substrate is sprayed. By drying the remaining rinsing liquid, minute moisture on the substrate surface can be dried. It is possible to prevent the occurrence.

Hereinafter, the present invention will be described with reference to the drawings showing the embodiments. FIG. 1 is a longitudinal sectional view showing a schematic configuration of a substrate processing apparatus according to the present invention. This substrate processing apparatus is a single-wafer type substrate processing apparatus that performs a cleaning process and a drying process on a substrate W.
A substrate processing apparatus according to the present invention is surrounded by a waste liquid line 7 and a chamber 1 having an exhaust port for discharging a chemical atmosphere, and uses a motor 2 as power, and transmits the power using a gear 3, a transmission belt 4, and a gear 5. The chuck table 6 holding the substrate W is rotated. In the substrate processing apparatus, the drying gas is supplied from the drying gas supply source 10 to the valve 11, and the drying gas is discharged onto the main surface of the substrate by opening the valve 11. Regarding the discharge of the drying gas, the flow rate of the drying gas discharged can be adjusted by adjusting the opening of the throttle valve 12. The flow rate can be confirmed with the flow meter 13.

As shown in FIG. 2, the drying gas discharge nozzle head 18 has a structure in which the drying gas discharge port area is reduced and the drying gas is locally discharged. The area of the discharge port of the drying gas discharge nozzle head 18 is preferably reduced because the dry gas can be locally discharged. However, if the area is too small, the supply amount is insufficient, and therefore, 0.2 mm ^{2 to} 13 mm ² is preferable. . Further, in order to adjust the angle at which the drying gas is discharged onto the substrate, the angle of the drying gas supply nozzle head 18 can be freely adjusted three-dimensionally using a ball joint as shown in FIG. . Further, as shown in FIG. 4, the structure of the drying gas supply nozzle head 18 is configured to control the flow of the drying gas, so that the drying gas discharge nozzle head 18 is installed perpendicular to the substrate. The angle at which the drying gas strikes the substrate can also be adjusted. In FIG. 2, it is possible to reduce the turbulent flow caused by the drying gas by locally discharging the drying gas. In FIG. 3, by adjusting the angle at which the drying gas hits the substrate, the gas flows in the centrifugal direction. There is an effect that the minute liquid lump that has been forcibly separated from the substrate is not returned to the dried substrate. Also, in FIG. 4, the structure is such that the direction of the drying gas is forcibly changed without changing the angle of the discharge nozzle of the drying gas. Can be secured.

  As the drying gas, nitrogen, air, argon, oxygen and the like are generally considered. The flow rate of the drying gas is 100 NL / min or more when the flow rate is large, and 100 NL / min or less when the flow rate is low. In the present invention, the flow rate of the drying gas is 100 NL / min. It is preferable to make it less than minutes. Note that the discharge of the drying gas does not mean that a large flow rate is generally good, but the drying can be efficiently performed by discharging the drying gas locally (in a spot manner). With this method, not only the consumption of the drying gas can be reduced, but also the amount of liquid mass scattered can be reduced, and the disturbance of the atmosphere due to the flow of the drying gas can be reduced. Reattachment on the substrate due to the turbulent flow of the liquid mass can also be handled. These two steps can be performed simultaneously by optimizing the position so that the liquid and gas flows do not interfere with each other, and the processing time can be shortened. However, good drying can be achieved by completely dividing the process, but the processing time becomes longer.

Further, ultrapure water is supplied from the ultrapure water supply source 14 to the valve 15, and the valve 15 is opened to discharge ultrapure water onto the main surface of the substrate.
The chemical solution is supplied from the chemical solution supply source 16 to the valve 17. By opening the valve 17, the chemical liquid is discharged onto the main surface of the substrate.
Further, the supply lines for the drying gas, ultrapure water and chemical solution supplied to the substrate main surface are fixed to the nozzle arm 9, and the nozzle arm 9 can be moved to the substrate main surface by the power of the motor 8. In addition, scanning can be performed on the upper surface of the substrate.
As shown in FIG. 5, the ultrapure water and the drying gas are discharged onto the substrate from the rinsing liquid discharge nozzle head 19 and the drying gas discharge nozzle head 18, and flow into each other by setting the distance to an optimum position. Can be discharged without interference. The supply of ultrapure water is scanned on the substrate from the rinse liquid discharge nozzle head 19 to the outer periphery, and then moved to the center of the substrate again, and the drying gas is discharged and scanned toward the outer periphery. It is also possible to divide the processing completely as you do. Further, the chemical liquid is discharged onto the substrate from the chemical liquid supply nozzle head 20.

The substrate processing method according to the present invention includes the following steps.
(1) Substrate cleaning process The rinse liquid is spread over the entire main surface of the substrate from the rinse liquid discharge nozzle head 19 to clean the substrate. In the substrate cleaning process, the substrate held on the chuck table 6 is rotated at, for example, 500 RPM in the case of oxide film etching.
(2) Substrate drying step Next, the substrate after the substrate cleaning step is rotated at a low speed, and at the same time, the rinse liquid discharge nozzle head 19 gradually discharges the substrate from the vicinity of the substrate while discharging the rinse liquid. The rinse liquid discharge nozzle head is moved to the outer periphery, the rinse liquid is discharged from the substrate as a large liquid mass, and the substrate is dried. The low speed rotation in this step is preferably 10 RPM or more and 1000 RPM or less. When this rotational speed is further increased, high-speed rotation occurs, and the high-speed rotation causes the rinse liquid accumulated on the substrate to be dispersed into spin-dried folds, resulting in minute spots, and due to turbulence around the substrate due to dispersion. It may reattach to the substrate surface. On the other hand, when the rotational speed is 10 RPM or less, the rinse liquid may not be effectively discharged.
(3) Drying gas discharge step In the substrate drying step, a drying gas discharge nozzle head 18 is provided at a location away from the rinse liquid discharge nozzle head 19 at the same time, and the substrate is dried from the drying gas discharge nozzle head 18 to the substrate. Gas is blown to dry the rinse liquid remaining on the main surface of the substrate. In the present invention, this dry gas discharge step is not necessarily required.
(4) Scattering step After the substrate drying step and the drying gas discharge step are finished, the substrate is rotated at a higher speed than in the drying step in order to scatter the rinse liquid remaining on the outer periphery of the substrate. .
In this scattering step, the substrate is rotated at a high speed. In this scattering step, dry gas is not flowed at all. The number of rotations in the case of high-speed rotation in this step is preferably in the range of 1000 to 4000 RPM, and if it is 1000 RPM or less, the rinsing liquid remaining from the substrate end face cannot be sufficiently scattered, and even if it is 4000 RPM or more The effect is unchanged.

An example of specific implementation will be shown below. Next, the present invention will be described more specifically with reference to examples and comparative examples. The following examples and comparative examples are merely examples, and do not limit the present invention.
Using the single-wafer substrate processing apparatus shown in FIG. 1, the substrate is rotated at a low speed of 100 rpm and simultaneously near the center of the substrate after etching with BHF (mixed chemical solution comprising hydrofluoric acid, ammonium fluoride, and ultrapure water). The nozzle is gradually moved to the outer periphery while discharging pure water from the rinse liquid discharge nozzle head 19, and then the pure water is stopped. The rinse liquid discharge nozzle head 19 is moved again to the vicinity of the center and the drying shown in FIG. While blowing the drying gas using the working gas discharge nozzle head 18, the gas is gradually moved to the outer periphery to stop the drying gas. At the same time, the drying process was performed by rotating at a high speed of 1500 RPM. Nitrogen gas was used as the drying gas, and nitrogen gas was blown from the drying gas discharge nozzle head 18 under the five conditions shown in Tables 1 and 2 during the drying process. However, the nitrogen flow rate of 0 NL / min indicates a drying process in which the drying gas is not discharged.

The evaluation results of Example 1 were as shown below.
(1) Presence / absence of particles The 8-inch silicon substrate was processed under the above conditions, and the change in the number of minute spots that could be measured by the foreign matter inspection apparatus before and after the processing was examined. The minute spots that can be measured by the foreign substance inspection apparatus are those that can be measured by a foreign substance inspection apparatus of 0.12 μm or more using Surfscan SP1 (manufactured by KLA-Tencor), which is a pattern-less wafer surface foreign substance inspection apparatus. The number of spots was measured. The evaluation results are shown in Table 1.

  On the other hand, as a comparative experiment, when the drying process was performed only by the high speed rotation without performing the low speed rotation after the pure water rinsing following the etching process, the number of minute spots increased to several thousand.

(2) Presence / absence of watermark The 8 inch silicon substrate and Patterned Wafer (manufactured by IBM) were processed under the above conditions, and the presence / absence of the watermark after standing for 15 to 20 minutes was examined. After the BHF treatment, the silicon substrate has a uniform hydrophobic surface, but Patterned Wafer (manufactured by IBM) has both hydrophilicity and hydrophobicity on the surface. The watermark was observed on the substrate surface with an optical microscope and evaluated according to the following criteria. The evaluation results are shown in Table 2.
○: Watermark is not seen at all on the substrate surface ×: Watermark is seen

  For silicon substrates that have a uniform hydrophobic surface after BHF treatment, good water mark results were obtained at any flow rate of nitrogen gas. A good watermark result was obtained when nitrogen gas was sometimes blown at 20-40 NL / min. However, since the number of particles increases as the nitrogen gas flow rate increases in Table 1, it seems that nitrogen blowing of about 20 NL / min is appropriate under the conditions of this example.

(3) Evaluation of differences depending on the type of drying gas Three types of drying gas, nitrogen, oxygen, and air, are used, and the flow rate of drying gas is set to 20 NL / min. The substrate surface was observed using an optical microscope. As a result, it was found that no watermark was generated in all the drying gases, and generation of the watermark could be eliminated by completely removing moisture on the substrate in the substrate drying process using the present invention.

  The present invention is not limited to the above-described embodiments, and various modifications and developments can be made. In the above embodiment, it can be used with appropriate modifications.

As is clear from the above examples, according to the present invention, by making the rotation at a low speed, fine spots that can be measured by the foreign substance inspection apparatus do not occur, and good drying can be performed so far. Dispersion and scattering of the liquid mass at a high rotation, which has been a problem, can be reduced, generation of watermarks can be suppressed, and a uniform hydrophobic surface substrate can be satisfactorily dried.
Furthermore, according to the present invention, after the liquid mass remaining on the main surface of the substrate is completely removed in this way, the rinse liquid remaining on the end surface of the substrate can be scattered by rotating the substrate at a high speed. I can do it.
In the case of a substrate having both hydrophilicity and hydrophobicity on the surface, moisture adheres to the hydrophilic surface portion mixed on the substrate in a thin film shape, and after the silicon is dissolved in this moisture, the moisture evaporates in the substrate drying process. In such a case, the silicon component remains, and thus a watermark may be generated. In such a case, while rotating the substrate at a low speed, the rinse liquid is discharged and gradually from the vicinity of the center of the substrate to the outer periphery of the substrate. The rinse liquid discharge nozzle head is moved, and the rinse liquid is discharged from the substrate as a large liquid mass, and the substrate is dried. At the same time, a drying gas is blown onto the substrate, and the main surface of the substrate is sprayed. By drying the remaining rinse solution, minute moisture on the substrate surface can be dried, and even on substrates with hydrophilicity and hydrophobicity mixed on the surface, It is possible to prevent the occurrence.

1 is a longitudinal sectional view showing a schematic configuration of a substrate processing apparatus according to the present invention. The longitudinal cross-sectional view which shows the shape of the gas discharge nozzle head for drying which made the discharge area small. The longitudinal section which shows the gas discharge nozzle head for drying made into the ball joint shape which controls the gas discharge direction for drying. The longitudinal cross-sectional view which shows the nozzle shape of the gas discharge nozzle head for drying which controlled the gas discharge flow path for drying. Schematic which shows the maintenance doctor example of this invention which shows the process which discharges ultrapure water and the gas for drying simultaneously.

Explanation of symbols

1: chamber 2: motor 3: gear 4: transmission belt 5: gear 6: chuck table 7: waste liquid line 8: motor 9: nozzle arm 10: dry gas supply source 11: valve 12: throttle valve 13: flow meter 14: Rinse solution supply source 15: Valve 16: Chemical solution supply source 17: Valve 18: Drying gas discharge nozzle head 19: Rinse solution discharge nozzle head 20: Chemical solution discharge nozzle head

Claims (10)

In the substrate processing method of drying the substrate after washing the substrate with a rinse liquid,
A substrate cleaning process for cleaning the substrate by rinsing the rinse liquid from the rinsing liquid discharge nozzle head over the entire surface of the substrate main surface;
The rinse liquid discharge nozzle head gradually rotates from the vicinity of the center of the substrate to the outer periphery of the substrate while discharging the rinse liquid from the rinse liquid discharge nozzle head at the same time as rotating the substrate after the substrate cleaning process is completed. A substrate drying step of discharging the rinse liquid as a large liquid mass from the substrate and drying the substrate;
A scattering step of rotating the substrate at a higher speed than in the substrate drying step in order to scatter the rinse liquid remaining on the outer periphery of the substrate after the substrate drying step;
A substrate processing method comprising:   In the substrate drying step, the substrate that has been subjected to the substrate cleaning step is rotated at a low speed and at the same time, gradually from the vicinity of the center of the substrate to the outer periphery of the substrate while discharging the rinse liquid from the rinse liquid discharge nozzle head. Moving the rinse liquid discharge nozzle head, discharging the rinse liquid as a large liquid mass from the substrate, drying the substrate, and providing a drying gas discharge nozzle head at a location away from the rinse liquid discharge nozzle head, The dry gas discharge process of spraying a dry gas on the substrate from the dry gas discharge nozzle head and drying the rinse liquid remaining on the main surface of the substrate is provided. Substrate processing method.   The substrate processing method according to claim 2, wherein the drying gas discharge nozzle head is fixed on the same track as the rinse liquid discharge nozzle head.   3. The substrate processing method according to claim 2, wherein the drying gas discharge nozzle head is scanned in a different track shape from the rinse liquid discharge nozzle head. The substrate processing method according to claim 2, wherein the area of the drying gas discharge port is 0.2mm ² ~13mm ^2.   The substrate processing method according to claim 2, wherein the drying gas discharged from the drying gas discharge port is 100 NL / min or less.   The substrate processing method according to claim 2, wherein a discharge angle of the drying gas discharge port is adjusted so that an angle at which the drying gas hits an interface between the rinse liquid and the substrate can be adjusted. .   The substrate processing method according to claim 2, wherein a discharge direction of the drying gas can be controlled in order to adjust an angle at which the drying gas hits an interface between the rinse liquid and the substrate. In a substrate processing apparatus for drying a substrate after cleaning the substrate with a rinsing liquid,
Substrate rotating means for holding and rotating the substrate;
Substrate rotation control means for controlling the number of rotations of the substrate;
A substrate cleaning means for cleaning the substrate by discharging a rinse liquid from a rinse liquid discharge nozzle to the main surface of the held substrate;
Substrate drying means for slowing down the rotation of the substrate after completion of the substrate cleaning process by the substrate cleaning means, moving to the outer periphery of the substrate while discharging the rinse liquid from the vicinity of the center of the substrate, and discharging the rinse liquid as a water mass,
A substrate processing apparatus comprising: In a substrate processing apparatus for drying a substrate after cleaning the substrate with a rinsing liquid,
Substrate rotating means for holding and rotating the substrate;
Substrate rotation control means for controlling the number of rotations of the substrate;
Substrate cleaning means for discharging the rinse liquid from the rinse liquid discharge nozzle to the main surface of the held substrate and cleaning the substrate;
A drying gas discharge means for discharging a drying gas to the main surface of the held substrate;
Substrate drying means for slowing down the rotation of the substrate after completion of the substrate cleaning process by the substrate cleaning means, moving to the outer periphery of the substrate while discharging the rinse liquid from near the center of the substrate, discharging the rinse liquid as a water mass, and drying the substrate ,
A gas discharge means for discharging a drying gas from a drying gas discharge nozzle head provided near the discharge port of the rinse liquid at the same time in the substrate drying means to dry moisture remaining on the main surface of the substrate;
A substrate processing apparatus comprising:

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