JP2008255478A - ZnO VAPOR DEPOSITION MATERIAL AND ZnO FILM FORMED THEREFROM - Google Patents
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本発明は、例えば太陽電池などに用いられる透明導電膜や、液晶表示装置、エレクトロルミネッセンス表示装置、タッチパネル装置の透明圧電センサーの透明電極、また表示装置を構成するアクティブマトリクス駆動装置、帯電防止導電膜コーティング、ガスセンサー、電磁遮蔽パネル、圧電デバイス、光電変換装置、発光装置、薄膜型二次電池などに用いられる膜を成膜するために用いられるＺｎＯ蒸着材及びそれにより形成されたＺｎＯ膜に関するものである。 The present invention relates to a transparent conductive film used in, for example, a solar cell, a liquid crystal display device, an electroluminescence display device, a transparent electrode of a transparent piezoelectric sensor of a touch panel device, an active matrix driving device constituting the display device, and an antistatic conductive film Related to ZnO vapor deposition materials used for forming films used in coatings, gas sensors, electromagnetic shielding panels, piezoelectric devices, photoelectric conversion devices, light-emitting devices, thin-film secondary batteries, and ZnO films formed thereby It is.
近年、太陽電池などの光電変換装置などを製造する場合には、透明導電膜が不可欠である。従来の透明導電膜としては、ＩＴＯ膜（錫をドープしたインジウム酸化物膜）が知られている。ＩＴＯ膜は、透明性に優れ、低抵抗であるという利点を有する。 In recent years, a transparent conductive film is indispensable when manufacturing photoelectric conversion devices such as solar cells. As a conventional transparent conductive film, an ITO film (indium oxide film doped with tin) is known. The ITO film has the advantages of excellent transparency and low resistance.
一方、太陽電池や液晶表示装置等にあっては、その低コスト化が求められている。しかし、インジウムが高価なことから、ＩＴＯ膜を透明導電膜として用いると、その太陽電池も必然的に高価なものになってしまう難点があった。また、太陽電池などを製造する場合などには、透明導電膜上にアモルファスシリコンをプラズマＣＶＤ法により成膜することになるが、その際に、透明導電膜がＩＴＯ膜であると、プラズマＣＶＤ時の水素プラズマにより、ＩＴＯ膜が劣化するという問題点もあった。 On the other hand, cost reduction is required for solar cells, liquid crystal display devices, and the like. However, since indium is expensive, when an ITO film is used as the transparent conductive film, the solar cell inevitably becomes expensive. In addition, when manufacturing solar cells or the like, amorphous silicon is deposited on the transparent conductive film by plasma CVD. At that time, if the transparent conductive film is an ITO film, There was also a problem that the ITO film deteriorated by the hydrogen plasma.
これらの点を解消するために、一層安価に作製することのできるＡｌ、Ｂ、Ｓｉなどの導電活性元素をドープした酸化亜鉛系膜を太陽電池等の透明導電膜として使用することが提案され、この酸化亜鉛系膜をスパッタリングにより形成するための酸化亜鉛系スパッタリング用ターゲットが提案されている（例えば、特許文献１参照。）。この酸化亜鉛系スパッタリング用ターゲットによると、上記導電活性元素を亜鉛に対して所定量含有させることにより極めて低抵抗な酸化亜鉛系焼結体が得られ、この焼結体は、原料粉末が微細で高分散性を有するほど焼結密度が向上し導電性が向上するとされている。
しかし、上記従来の酸化亜鉛系スパッタリング用ターゲットを用いて高速成膜するために高電圧をかけながらスパッタリングを行うと、異常放電が発生しやすく、放電状態が不安定でターゲットが不均一に消耗し、得られた膜に組成ずれが生じて低抵抗の膜を得ることが困難となる不具合があった。一方、投入電力を小さくして電圧を低くすると成膜速度が遅くなり、酸化亜鉛系膜の成膜効率は大幅に低下する不具合があった。
本発明の目的は、ＩＴＯ膜に迫る高い導電率の膜を高速成膜することのできるＺｎＯ蒸着材及びこれを用いたＺｎＯ膜を提供することにある。
However, if sputtering is performed while applying a high voltage to form a high-speed film using the conventional zinc oxide sputtering target, abnormal discharge is likely to occur, the discharge state is unstable, and the target is consumed unevenly. However, there was a problem that it was difficult to obtain a low-resistance film due to composition deviation in the obtained film. On the other hand, when the input power is reduced and the voltage is lowered, the film formation rate is slowed down, and the film formation efficiency of the zinc oxide film is greatly reduced.
An object of the present invention is to provide a ZnO vapor deposition material capable of forming a film having a high conductivity approaching that of an ITO film at high speed, and a ZnO film using the same.
請求項１に係る発明は、透明導電膜を成膜するために用いられるＺｎＯ蒸着材である。
その特徴ある構成は、ＺｎＯを主成分としたペレットからなり、ペレットがＬａとＢ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素を含み、ＬａがＢ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素よりも含有割合が高く、Ｌａの含有割合が０．１〜１４．９質量％、Ｂ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素の含有割合が０．１〜１０質量％の範囲内であるところにある。
請求項１に係る発明では、ＺｎＯを主成分としたペレットに、ＬａとＢ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素が上記含有割合で含むので、このＺｎＯ蒸着材を用いると、ＩＴＯ膜に迫る高い導電性を有するＺｎＯ膜を成膜できる。
The invention according to claim 1 is a ZnO vapor deposition material used for forming a transparent conductive film.
The characteristic structure is composed of pellets mainly composed of ZnO, and the pellets contain one or more elements selected from the group consisting of La and B, Al, Ga and Sc, and La is B, Al. The content ratio is higher than that of one or more elements selected from the group consisting of Ga, and Sc, and the content ratio of La is 0.1 to 14.9% by mass, consisting of B, Al, Ga, and Sc. The content ratio of one or more elements selected from the group is in the range of 0.1 to 10% by mass.
In the invention according to claim 1, since one or two or more elements selected from the group consisting of La and B, Al, Ga and Sc are contained in the pellet containing ZnO as a main component in the above content ratio, When a ZnO vapor deposition material is used, a ZnO film having high conductivity approaching that of an ITO film can be formed.
請求項２に係る発明は、ＬａとＢ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素の合計の含有割合が０．２〜１５質量％の範囲内であるＺｎＯ蒸着材である。
請求項２に係る発明では、ＺｎＯ蒸着材中のＬａとＢ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素の合計の含有割合が０．２〜１５質量％の範囲内であることにより、導電特性及び分光特性において優れた効果が得られる。
In the invention according to claim 2, the total content ratio of one or more elements selected from the group consisting of La and B, Al, Ga and Sc is in the range of 0.2 to 15% by mass. ZnO vapor deposition material.
In the invention which concerns on Claim 2, the total content rate of the 1 type (s) or 2 or more types of element chosen from the group which consists of La, B, Al, Ga, and Sc in a ZnO vapor deposition material is 0.2-15 mass%. By being within the range, excellent effects in the conductive characteristics and spectral characteristics can be obtained.
請求項３に係る発明は、請求項１に係る発明であって、ＺｎＯのペレットが多結晶体又は単結晶体であるＺｎＯ蒸着材である。
請求項３に係る発明では、ＺｎＯのペレットが多結晶体か或いは単結晶体であるかの組織の相違ではなく、組成の相違によって効果が著しく変化するため、ＺｎＯのペレットが多結晶である場合だけでなく、単結晶であっても請求項１に記載された範囲内の組成を有すれば、そのＺｎＯ蒸着材を用いてＺｎＯ膜を成膜すると、そのＺｎＯ膜は広い温度範囲にわたってＩＴＯ膜に迫る高い導電性が得られる。
The invention according to claim 3 is the invention according to claim 1, wherein the ZnO pellet is a polycrystalline or single crystal ZnO vapor deposition material.
In the invention according to claim 3, when the ZnO pellet is polycrystalline because the effect changes notably depending on the composition but not the difference in the structure of whether the ZnO pellet is polycrystalline or single crystal. In addition, if a ZnO film is formed using the ZnO vapor deposition material as long as it has a composition within the range described in claim 1 even if it is a single crystal, the ZnO film becomes an ITO film over a wide temperature range. High conductivity close to
請求項４に係る発明は、請求項１ないし３いずれか１項に記載のＺｎＯ蒸着材をターゲット材とする真空成膜法により形成されたＺｎＯ膜である。
請求項４に係る発明では、上記請求項１ないし３いずれか１項に記載のＺｎＯ蒸着材を用いてＺｎＯ膜を成膜するため、このＺｎＯ膜は、ＩＴＯ膜に迫る高い導電性が得られる。
The invention according to claim 4 is a ZnO film formed by a vacuum film formation method using the ZnO vapor deposition material according to any one of claims 1 to 3 as a target material.
In the invention according to claim 4, since the ZnO film is formed using the ZnO vapor deposition material according to any one of claims 1 to 3, the ZnO film has high conductivity approaching that of the ITO film. .
請求項５に係る発明は、請求項４に係る発明であって、真空成膜法が電子ビーム蒸着法、イオンプレーティング法、スパッタリング法又はプラズマ蒸着法であるＺｎＯ膜である。 The invention according to claim 5 is the invention according to claim 4, wherein the vacuum film-forming method is a ZnO film which is an electron beam evaporation method, an ion plating method, a sputtering method or a plasma evaporation method.
以上述べたように、本発明の透明導電膜を成膜するために用いられるＺｎＯ蒸着材によれば、ＺｎＯを主成分としたペレットからなり、ペレットがＬａとＢ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素を含み、ＬａがＢ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素よりも含有割合が高く、Ｌａの含有割合が０．１〜１４．９質量％、Ｂ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素の含有割合が０．１〜１０質量％の範囲内であるので、このＺｎＯ蒸着材を用いると、ＩＴＯ膜に迫る高い導電性を有するＺｎＯ膜を成膜できる。本発明のＺｎＯ蒸着材は、添加元素として、ＬａとＢ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素を含むため、イオン半径がＺｎより大きいＬａにより歪んだ結晶を、Ｂ、Ａｌ又はＧａといったイオン半径の小さい元素を添加して回復整合させることにより、或いは反応性の高いＳｃの添加により結晶構造の整った膜へ回復させることにより、透過率の高いＺｎＯ膜が成膜でき、更に、緻密性に優れた膜を得られることにより、耐久性が高いＺｎＯ膜が成膜できる。
また、本発明に係るＺｎＯ膜は、本発明に係るＺｎＯ蒸着材を用いて成膜されるため、
高い導電率、高い透過率が得られ、更に、膜の耐久性が向上する。
As described above, according to the ZnO vapor deposition material used for forming the transparent conductive film of the present invention, it consists of pellets mainly composed of ZnO, and the pellets consist of La, B, Al, Ga and Sc. Contains one or more elements selected from the group, La is higher in content than one or more elements selected from the group consisting of B, Al, Ga and Sc, and contains La The content ratio of one or more elements selected from the group consisting of 0.1 to 14.9 mass%, B, Al, Ga and Sc is in the range of 0.1 to 10 mass%. Therefore, when this ZnO vapor deposition material is used, a ZnO film having high conductivity approaching that of the ITO film can be formed. Since the ZnO vapor deposition material of the present invention contains one or more elements selected from the group consisting of La and B, Al, Ga and Sc as additive elements, the ionic radius is distorted by La which is larger than Zn. By adding an element having a small ionic radius, such as B, Al, or Ga, to recover and match the crystal, or by adding a highly reactive Sc to recover a film having a well-structured crystal structure, ZnO having a high transmittance can be obtained. Since a film can be formed and a film having excellent denseness can be obtained, a highly durable ZnO film can be formed.
Further, since the ZnO film according to the present invention is formed using the ZnO vapor deposition material according to the present invention,
High conductivity and high transmittance are obtained, and the durability of the film is improved.
次に本発明を実施するための最良の形態を説明する。
本発明者は、ＺｎＯ蒸着材及びこの蒸着材を用いて成膜されたＺｎＯ膜中の添加物種及びその含有量における導電性への影響を詳細に調査したところ、ＺｎＯのペレット中に添加元素として含まれるＬａとＢ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素のそれぞれの含有割合が大きく影響していることが確認された。ＺｎＯのペレット中において、このＬａとＢ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素の含有割合が増加するほど概して導電性は良好となるが、更に増加すると逆に劣化することから、製品への適用を考えた場合、これら２元素の最適な含有割合の範囲が存在することが判った。
Next, the best mode for carrying out the present invention will be described.
The present inventor has investigated in detail the effect of conductivity on the ZnO vapor deposition material and the additive species in the ZnO film formed using this vapor deposition material and its content. As an additive element in the ZnO pellet, It was confirmed that the content ratios of one or two or more elements selected from the group consisting of La and B, Al, Ga, and Sc contained had a great influence. In the ZnO pellet, the conductivity generally becomes better as the content ratio of one or more elements selected from the group consisting of La and B, Al, Ga and Sc increases, but further increases. On the other hand, since it deteriorates, it was found that there is an optimal content ratio range of these two elements when considering application to products.
本発明に係るＺｎＯ蒸着材は、ＺｎＯを主成分とし、ＬａとＢ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素を含有する。イオン半径が小さいＢ、Ａｌ又はＧａ、或いは反応性の高いＳｃを使用することで膜の整合性を向上させることができる。添加元素としてＬａとＢ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素を含むため、導電に寄与する過電子を大量に発現させ維持することにより、高い導電率を有するＺｎＯ膜を成膜できる。本発明に係るＺｎＯ蒸着材中のＬａは０．１〜１４．９質量％の範囲内とする。Ｌａが下限値である０．１質量％未満になると、導電性が著しく低下し、上限値である１４．９質量％を越えると、透過率が著しく低下するからである。また、Ｂ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素は０．１〜１０質量％の範囲内とする。Ｂ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素が下限値である０．１質量％未満になると、導電性が著しく低下し、上限値である１０質量％を越えると、蒸着時の組成ずれを生じさせるからである。このうち、Ｌａ元素は３〜６質量％の範囲内が好ましく、Ｂ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素は１〜３質量％の範囲内であることが好ましい。なお、緻密な結晶構造を維持するために、Ｌａの含有割合は、Ｂ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素の含有割合よりも高くする。一方、Ｌａの含有割合がＢ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素の含有割合よりも低くなると、導電性及び透過率が悪化する。また、ＬａとＢ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素の合計の含有割合は０．２〜１５質量％の範囲内であることが好ましい。これらの添加元素は、ＺｎＯ蒸着材中に微量に含まれる場合には、ＺｎＯマトリックスの粒界や粒内に粒状の析出物として存在するのではなく、ＺｎＯ蒸着材中に均一に分散している。また、ＺｎＯ蒸着材中では、これらの添加元素はそれぞれの酸化物として存在するものと考えられる。 The ZnO vapor deposition material according to the present invention contains ZnO as a main component, and contains one or more elements selected from the group consisting of La, B, Al, Ga, and Sc. By using B, Al or Ga having a small ion radius, or highly reactive Sc, the film consistency can be improved. Since one or more elements selected from the group consisting of La and B, Al, Ga and Sc are included as additive elements, high conductivity can be achieved by expressing and maintaining a large amount of overelectrons contributing to conduction. ZnO film can be formed. La in the ZnO vapor deposition material which concerns on this invention shall be in the range of 0.1-14.9 mass%. This is because when La is less than the lower limit of 0.1% by mass, the conductivity is remarkably lowered, and when La exceeds the upper limit of 14.9% by mass, the transmittance is significantly lowered. Moreover, the 1 type (s) or 2 or more types of element chosen from the group which consists of B, Al, Ga, and Sc shall be in the range of 0.1-10 mass%. When one or more elements selected from the group consisting of B, Al, Ga and Sc are less than 0.1% by mass which is the lower limit, the conductivity is remarkably lowered, and 10% by mass which is the upper limit. This is because a compositional deviation at the time of vapor deposition occurs when the ratio exceeds. Among these, the La element is preferably in the range of 3 to 6% by mass, and one or more elements selected from the group consisting of B, Al, Ga and Sc are in the range of 1 to 3% by mass. It is preferable. In order to maintain a dense crystal structure, the content ratio of La is higher than the content ratio of one or more elements selected from the group consisting of B, Al, Ga, and Sc. On the other hand, when the content ratio of La is lower than the content ratio of one or more elements selected from the group consisting of B, Al, Ga, and Sc, conductivity and transmittance deteriorate. Moreover, it is preferable that the total content rate of the 1 type (s) or 2 or more types of element chosen from the group which consists of La, B, Al, Ga, and Sc exists in the range of 0.2-15 mass%. When these additive elements are contained in a trace amount in the ZnO vapor deposition material, they do not exist as granular precipitates in the grain boundaries and grains of the ZnO matrix, but are uniformly dispersed in the ZnO vapor deposition material. . In addition, in the ZnO vapor deposition material, these additive elements are considered to exist as respective oxides.
本発明に係るＺｎＯ蒸着材は、ＺｎＯを主成分としたペレットからなる。このペレットは直径が５〜５０ｍｍであって、厚さが２〜３０ｍｍであることが好ましい。このペレットの直径を５〜５０ｍｍとするのは安定かつ高速な成膜の実施のためであり、その直径が５ｍｍ未満ではスプラッシュ等が発生する不具合があり、５０ｍｍを越えるとハース（蒸着材溜）への充填率が低下することに起因する蒸着における膜の不均一及び成膜速度の低下をもたらす不具合がある。また、その厚さを２〜３０ｍｍとするのは安定かつ高速な成膜の実施のためであり、その厚さが２ｍｍ未満ではスプラッシュ等が発生する不具合があり、３０ｍｍを越えるとハース（蒸着材溜）への充填率が低下することに起因する蒸着における膜の不均一及び成膜速度の低下をもたらす不具合がある。また、このＺｎＯのペレットは、多結晶体又は単結晶体であることが好ましい。 The ZnO vapor deposition material according to the present invention is composed of pellets mainly composed of ZnO. This pellet is preferably 5 to 50 mm in diameter and 2 to 30 mm in thickness. The diameter of the pellet is set to 5 to 50 mm for the purpose of stable and high-speed film formation. If the diameter is less than 5 mm, there is a problem that splash or the like occurs. If the diameter exceeds 50 mm, the hearth (deposition material reservoir) There is a defect that causes non-uniformity of the film in vapor deposition and a decrease in the film formation rate due to a decrease in filling rate. Further, the thickness is set to 2 to 30 mm for the purpose of stable and high-speed film formation. If the thickness is less than 2 mm, there is a problem that splash or the like occurs. There is a defect that causes non-uniformity of the film in vapor deposition and a decrease in the film formation rate due to a decrease in the filling rate into the reservoir. The ZnO pellets are preferably a polycrystal or a single crystal.
このように構成された本発明のＺｎＯ蒸着材では、３価の希土類元素であるＬａを添加元素として含むため、２価であるＺｎに対して過剰のキャリア電子を発生させることにより、高い導電率を確保できる。また、希土類はＺｎＯ蒸着材に添加した場合、蒸着時の組成ずれを起こしにくい材料であり、膜で所望の組成比率を維持することができる。また、導電の機構としては、キャリア電子の強制投入以外に酸素欠損によるものがある。通常蒸着法では酸素ガスを導入するが、一般的には膜組成において酸素が不足状態となる。透明導電膜形成において酸素欠損を生成させ抵抗を下げる手法が採られるけれども、希土類元素を添加する場合、蒸発性能に優れるため制御しやすいといった特徴がある。本発明では、この特徴に加え、Ｂ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素を添加元素として含むことで、ＩＴＯに迫る高い導電率を得ることができるものである。 Since the ZnO vapor deposition material of the present invention configured as described above contains La, which is a trivalent rare earth element, as an additive element, it generates high carrier conductivity by generating excess carrier electrons with respect to Zn, which is divalent. Can be secured. Further, when rare earth is added to the ZnO vapor deposition material, it is a material that hardly causes a composition shift during vapor deposition, and a desired composition ratio can be maintained in the film. In addition to the forced injection of carrier electrons, the conduction mechanism includes oxygen vacancies. In general vapor deposition, oxygen gas is introduced, but in general, oxygen is insufficient in the film composition. Although a technique of generating oxygen vacancies and lowering resistance in forming a transparent conductive film is employed, when a rare earth element is added, there is a feature that it is easy to control because of its excellent evaporation performance. In the present invention, in addition to this feature, by including one or more elements selected from the group consisting of B, Al, Ga and Sc as additive elements, high conductivity approaching that of ITO can be obtained. Is.
次に、ＺｎＯ蒸着材の製造方法を、Ｂ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素がＢである場合で、焼結法により作製する場合を代表して説明する。
先ず、高純度ＺｎＯ粉末と、ＺｎＯ蒸着材中のＬａの含有割合が０．１〜１４．９質量％の範囲となる量のＬａ2Ｏ3粉末と、ＺｎＯ蒸着材中のＢの含有割合が０．１〜１０質量％の範囲となる量のＢ2Ｏ3粉末と、バインダと、有機溶媒とを混合して、濃度が３０〜７５質量％、好ましくは４０〜６５質量％のスラリーを調製する。高純度ＺｎＯ粉末は、純度が９８％以上であることが好ましく、９８．４％以上であることが更に好ましい。ＺｎＯ粉末の純度が９８％以上であれば、不純物の影響による導電率の低下を抑えることができるからである。スラリーの濃度を３０〜７５質量％に限定したのは、７５質量％を越えると上記スラリーが非水系であるため、安定した混合造粒が難しく、３０質量％未満では均一な組織を有する緻密なＺｎＯ焼結体が得られ難いからである。ＺｎＯ粉末の平均粒径は０．１〜５．０μｍの範囲内にあることが好ましい。０．１μｍ未満では、粉末が細かすぎて凝集するため、粉末のハンドリングが悪くなり、高濃度スラリーを調製し難い傾向があり、５．０μｍを越えると、微細構造の制御が難しく、緻密なペレットが得られ難い傾向があるからである。
Next, the production method of the ZnO vapor deposition material is represented by the case where one or two or more elements selected from the group consisting of B, Al, Ga and Sc are B, and produced by a sintering method. I will explain.
First, the high-purity ZnO powder, the La 2 O 3 powder in an amount such that the La content in the ZnO vapor deposition material is in the range of 0.1 to 14.9% by mass, and the B content in the ZnO vapor deposition material are the amount of B 2 O 3 powder in the range of 0.1 to 10 mass%, and a binder, by mixing the organic solvent, the concentration is 30 to 75 wt%, preferably 40 to 65 wt% of the slurry preparation To do. The high purity ZnO powder preferably has a purity of 98% or more, more preferably 98.4% or more. This is because if the purity of the ZnO powder is 98% or more, a decrease in conductivity due to the influence of impurities can be suppressed. The concentration of the slurry is limited to 30 to 75% by mass. If the slurry exceeds 75% by mass, the slurry is non-aqueous, so that stable mixing granulation is difficult, and if it is less than 30% by mass, a dense structure having a uniform structure is obtained. This is because it is difficult to obtain a ZnO sintered body. The average particle size of the ZnO powder is preferably in the range of 0.1 to 5.0 μm. If it is less than 0.1 μm, the powder is too fine and agglomerates, so that the handling of the powder tends to be poor, and it tends to be difficult to prepare a high-concentration slurry. This is because it tends to be difficult to obtain.
Ｌａ2Ｏ3粉末はＬａ存在量の偏在の防止とＺｎＯマトリックスとの反応性及びＬａ化合物の純度を考慮した場合、１次粒子径がナノスケールの酸化ランタン粒子を添加することが好ましい。Ｂ2Ｏ3粉末は平均粒径が０．０１〜１μｍの範囲内のものを使用することが好ましい。０．０１〜１μｍの範囲内のものを使用すれば、Ｂ2Ｏ3粉末を均一に分散するのに好適であるからである。このうち、０．０５〜０．５μｍの範囲のものが特に好ましい。 In consideration of prevention of uneven distribution of La abundance, reactivity with the ZnO matrix and purity of the La compound, La 2 O 3 powder is preferably added with lanthanum oxide particles having a primary particle size of nanoscale. It is preferable to use a B 2 O 3 powder having an average particle diameter in the range of 0.01 to 1 μm. This is because the use of a powder having a diameter within the range of 0.01 to 1 μm is suitable for uniformly dispersing the B 2 O 3 powder. Among these, the thing of the range of 0.05-0.5 micrometer is especially preferable.
バインダとしてはポリエチレングリコールやポリビニールブチラール等を、有機溶媒としてはエタノールやプロパノール等を用いることが好ましい。バインダは０．２〜５．０質量％添加することが好ましい。 It is preferable to use polyethylene glycol or polyvinyl butyral as the binder, and ethanol or propanol as the organic solvent. The binder is preferably added in an amount of 0.2 to 5.0% by mass.
また高純度粉末とバインダと有機溶媒との湿式混合、特に高純度粉末と分散媒である有機溶媒との湿式混合は、湿式ボールミル又は撹拌ミルにより行われる。湿式ボールミルでは、ＺｒＯ2製ボールを用いる場合には、直径５〜１０ｍｍの多数のＺｒＯ2製ボールを用いて８〜２４時間、好ましくは２０〜２４時間湿式混合される。ＺｒＯ2製ボールの直径を５〜１０ｍｍと限定したのは、５ｍｍ未満では混合が不十分となることからであり、１０ｍｍを越えると不純物が増える不具合があるからである。また混合時間が最長２４時間と長いのは、長時間連続混合しても不純物の発生が少ないからである。 The wet mixing of the high purity powder, the binder, and the organic solvent, particularly the wet mixing of the high purity powder and the organic solvent that is the dispersion medium is performed by a wet ball mill or a stirring mill. In the wet ball mill, when ZrO 2 balls are used, wet mixing is performed for 8 to 24 hours, preferably 20 to 24 hours, using a large number of ZrO 2 balls having a diameter of 5 to 10 mm. The reason why the diameter of the ZrO 2 balls is limited to 5 to 10 mm is that mixing is insufficient when the diameter is less than 5 mm, and there is a problem that impurities increase when the diameter exceeds 10 mm. The reason why the mixing time is as long as 24 hours is that the generation of impurities is small even if the mixing is continued for a long time.
次に、上記スラリーを噴霧乾燥して平均粒径が５０〜２５０μｍ、好ましくは５０〜２００μｍの混合造粒粉末を得る。この造粒粉末を所定の型に入れて所定の圧力で成形する。上記噴霧乾燥はスプレードライヤを用いて行われることが好ましく、所定の型は一軸プレス装置又は冷間静水圧成形装置（ＣＩＰ（Cold Isostatic Press）成形装置）が用いられる。一軸プレス装置では、造粒粉末を７５０〜２０００ｋｇ／ｃｍ2（７３５．５〜１９６１．３ＭＰａ）、好ましくは１０００〜１５００ｋｇ／ｃｍ2（９８０．７〜１４７１．０ＭＰａ）の圧力で一軸加圧成形し、ＣＩＰ成形装置では、造粒粉末を１０００〜３０００ｋｇ／ｃｍ2（９８０．７〜２９４２．０ＭＰａ）、好ましくは１５００〜２０００ｋｇ／ｃｍ2（１４７１．０〜１９６１．３ＭＰａ）の圧力でＣＩＰ成形する。圧力を上記範囲に限定したのは、成形体の密度を高めるとともに焼結後の変形を防止し、後加工を不要にするためである。 Next, the slurry is spray-dried to obtain a mixed granulated powder having an average particle size of 50 to 250 μm, preferably 50 to 200 μm. This granulated powder is put into a predetermined mold and molded at a predetermined pressure. The spray drying is preferably performed using a spray dryer, and the predetermined die is a uniaxial press device or a cold isostatic press (CIP (Cold Isostatic Press) molding device). In uniaxial pressing apparatus, granulated powder 750~2000kg / cm 2 (735.5~1961.3MPa), preferably uniaxial pressing at a pressure of 1000~1500kg / cm 2 (980.7~1471.0MPa) In the CIP molding apparatus, the granulated powder is CIP molded at a pressure of 1000 to 3000 kg / cm 2 (980.7 to 2942.0 MPa), preferably 1500 to 2000 kg / cm 2 (1471.0 to 1961.3 MPa). The reason why the pressure is limited to the above range is to increase the density of the molded body, prevent deformation after sintering, and eliminate the need for post-processing.
更に、成形体を所定の温度で焼結する。焼結は大気、不活性ガス、真空又は還元ガス雰囲気中で１０００℃以上、好ましくは１２００〜１４００℃の温度で１〜１０時間、好ましくは２〜５時間行う。これにより所望のＺｎＯを主成分とするペレットが得られる。ペレットの相対密度は９０％以上であることが好ましく、９５％以上であることが更に好ましい。相対密度が９０％以上であれば、成膜時のスプラッシュを低減できるからである。上記焼結は大気圧下で行うが、ホットプレス（ＨＰ）焼結や熱間静水圧プレス（ＨＩＰ、Hot Isostatic Press）焼結のように加圧焼結を行う場合には、不活性ガス、真空又は還元ガス雰囲気中で１０００℃以上の温度で１〜５時間行うことが好ましい。 Further, the molded body is sintered at a predetermined temperature. Sintering is carried out at a temperature of 1000 ° C. or higher, preferably 1200 to 1400 ° C. for 1 to 10 hours, preferably 2 to 5 hours in the atmosphere, inert gas, vacuum or reducing gas atmosphere. Thereby, the pellet which has desired ZnO as a main component is obtained. The relative density of the pellets is preferably 90% or more, and more preferably 95% or more. This is because if the relative density is 90% or more, splash during film formation can be reduced. The above sintering is performed under atmospheric pressure, but when performing pressure sintering such as hot pressing (HP) sintering or hot isostatic pressing (HIP) sintering, an inert gas, It is preferable to carry out at a temperature of 1000 ° C. or higher for 1 to 5 hours in a vacuum or a reducing gas atmosphere.
次いで、得られたペレットの多結晶ＺｎＯ蒸着材をターゲット材として、真空成膜法により基板表面にＺｎＯ膜を形成する。本発明のＺｎＯ蒸着材を用いて成膜するのに適する真空成膜法としては、電子ビーム蒸着法、イオンプレーティング法、スパッタリング法及びプラズマ蒸着法が挙げられる。これらの成膜方法により成膜される本発明のＺｎＯ膜は、本発明のＺｎＯ蒸着材を使用しているため、ＩＴＯに迫るような、比抵抗が３〜５×１０-4Ω・ｃｍの高い導電率、可視光透過率が９０％以上の高い透過率が得られる。更に、イオン半径がＺｎより大きいＬａにより歪んだ結晶を、Ｂ、Ａｌ又はＧａといったイオン半径の小さい元素を添加して回復整合させ、或いは反応性の高いＳｃの添加により結晶構造の整った膜へ回復させることで、緻密な膜を形成することにより、膜の耐久性も向上する。 Next, a ZnO film is formed on the substrate surface by a vacuum film-forming method using the obtained polycrystalline ZnO vapor deposition material in pellets as a target material. Examples of the vacuum film formation method suitable for forming a film using the ZnO vapor deposition material of the present invention include an electron beam vapor deposition method, an ion plating method, a sputtering method, and a plasma vapor deposition method. Since the ZnO film of the present invention formed by these film forming methods uses the ZnO vapor deposition material of the present invention, the specific resistance approaching that of ITO is 3 to 5 × 10 −4 Ω · cm. High conductivity and high transmittance with a visible light transmittance of 90% or more can be obtained. Further, a crystal distorted by La having an ionic radius larger than Zn is recovered and matched by adding an element having a small ionic radius such as B, Al or Ga, or a film having a well-structured crystal structure by adding highly reactive Sc. By recovering, by forming a dense film, the durability of the film is also improved.
なお、ＢをＬａとともに含むＺｎＯ蒸着材の製造方法について述べたが、Ｂ以外の他の元素であるＡｌ、Ｇａ及びＳｃを含むＺｎＯ蒸着材を製造する場合のＡｌ2Ｏ3粉末、Ｇａ2Ｏ3粉末及びＳｃ2Ｏ3粉末の各平均粒径の好ましい範囲は、０．０１〜１μｍであり、このうち、特に好ましくは０．０５〜０．５μｍの範囲のものである。 Although described method for manufacturing a ZnO deposition material containing B with La, Al, which is another element other than B, Al 2 O 3 powder in the case of producing a ZnO deposition material containing Ga and Sc, Ga 2 O The preferable range of each average particle size of the 3 powder and the Sc 2 O 3 powder is 0.01 to 1 μm, and among these, the range of 0.05 to 0.5 μm is particularly preferable.
また本発明で使用されるＺｎＯ粉末、Ｂ2Ｏ3粉末、Ａｌ2Ｏ3粉末、Ｇａ2Ｏ3粉末、Ｓｃ2Ｏ3粉末及び混合造粒粉末の平均粒径の値はレーザー回折法により算出又は測定される値である。 The average particle size of ZnO powder, B 2 O 3 powder, Al 2 O 3 powder, Ga 2 O 3 powder, Sc 2 O 3 powder and mixed granulated powder used in the present invention is calculated by a laser diffraction method. Or a measured value.
次に本発明の実施例を比較例とともに詳しく説明する。
＜実施例１＞
先ず、ＺｎＯ粉末９９４．４８ｇと、Ｌａ2Ｏ3粉末２．３０ｇと、Ｂ2Ｏ3粉末３．２２ｇと、バインダと、有機溶媒とを湿式ボールミルを用い、湿式混合してスラリーを調製した。調製したスラリーを噴霧乾燥し、得られた混合造粒粉末を１０００ＭＰａの圧力で加圧成形した後、１３００℃の温度で焼結し、ＺｎＯ蒸着材を作製した。
Next, examples of the present invention will be described in detail together with comparative examples.
<Example 1>
First, 994.48 g of ZnO powder, 2.30 g of La 2 O 3 powder, 3.22 g of B 2 O 3 powder, a binder, and an organic solvent were wet mixed using a wet ball mill to prepare a slurry. The prepared slurry was spray-dried, and the obtained mixed granulated powder was pressure-molded at a pressure of 1000 MPa, and then sintered at a temperature of 1300 ° C. to produce a ZnO vapor deposition material.
得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表１に示すように、Ｌａ濃度が０．２質量％、Ｂ濃度が０．１質量％である多結晶ＺｎＯのペレットであった。またペレットの直径及び厚さはそれぞれ５ｍｍ及び１．６ｍｍであった。 The obtained ZnO vapor deposition material has a relative density of 95% and, as shown in Table 1 below, a polycrystalline ZnO pellet having a La concentration of 0.2% by mass and a B concentration of 0.1% by mass. Met. The diameter and thickness of the pellets were 5 mm and 1.6 mm, respectively.
次に、ガラス基板（無アルカリガラス）上に、上記ＺｎＯ蒸着材を用いて電子ビーム蒸着法により、膜厚２００ｎｍのＺｎＯ膜を成膜した。具体的には、直径５０ｍｍ、深さ２５ｍｍの電子ビーム蒸着装置のハースに仕込まれた上記ＺｎＯ蒸着材に、到達真空度２．６６×１０-4Ｐａ、酸素分圧１．３３×１０-2の雰囲気において、加速電圧１０ｋＶ、ビームスキャンエリア約４０ｍｍφの電子ビームを照射、加熱することにより行った。 Next, a 200 nm-thick ZnO film was formed on a glass substrate (non-alkali glass) by the electron beam evaporation method using the ZnO evaporation material. Specifically, the ultimate vacuum degree is 2.66 × 10 −4 Pa and the partial pressure of oxygen is 1.33 × 10 −2 on the ZnO vapor deposition material charged in the hearth of the electron beam vapor deposition apparatus having a diameter of 50 mm and a depth of 25 mm. In this atmosphere, an electron beam having an acceleration voltage of 10 kV and a beam scan area of about 40 mmφ was irradiated and heated.
＜実施例２＞
ＺｎＯ粉末を９３２．６ｇ、Ｌａ2Ｏ3粉末を３５．２ｇ、Ｂ2Ｏ3粉末を３２．２ｇとしたこと以外は、実施例１と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表１に示すように、Ｌａ濃度が３質量％、Ｂ濃度が１質量％であった。
<Example 2>
A ZnO vapor deposition material was prepared in the same manner as in Example 1 except that 932.6 g of ZnO powder, 35.2 g of La 2 O 3 powder, and 32.2 g of B 2 O 3 powder were prepared, and the resultant was placed on a glass substrate. A ZnO film was formed. In addition, the obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 1 below, the La concentration was 3 mass% and the B concentration was 1 mass%.
＜実施例３＞
ＺｎＯ粉末を８３３．０ｇ、Ｌａ2Ｏ3粉末を７０．４ｇ、Ｂ2Ｏ3粉末を９６．６ｇとしたこと以外は、実施例１と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表１に示すように、Ｌａ濃度が６質量％、Ｂ濃度が３質量％であった。
<Example 3>
A ZnO vapor deposition material was prepared in the same manner as in Example 1 except that 833.0 g of ZnO powder, 70.4 g of La 2 O 3 powder, and 96.6 g of B 2 O 3 powder were formed on a glass substrate. A ZnO film was formed. In addition, the obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 1 below, the La concentration was 6% by mass and the B concentration was 3% by mass.
＜実施例４＞
ＺｎＯ粉末を５０３．２８ｇ、Ｌａ2Ｏ3粉末を１７４．７０ｇ、Ｂ2Ｏ3粉末を３２２．０２ｇとしたこと以外は、実施例１と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表１に示すように、Ｌａ濃度が１４．９質量％、Ｂ濃度が１０質量％であった。
<Example 4>
A ZnO vapor deposition material was prepared in the same manner as in Example 1 except that 503.28 g of ZnO powder, 174.70 g of La 2 O 3 powder, and 322.02 g of B 2 O 3 powder were formed on a glass substrate. A ZnO film was formed. The obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 1 below, the La concentration was 14.9% by mass and the B concentration was 10% by mass.
＜比較例１＞
ＺｎＯ粉末を９９９．４５ｇ、Ｌａ2Ｏ3粉末を０．２３ｇ、Ｂ2Ｏ3粉末を０．３２ｇとしたこと以外は、実施例１と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表１に示すように、Ｌａ濃度が０．０２質量％、Ｂ濃度が０．０１質量％であった。
<Comparative Example 1>
A ZnO vapor deposition material was prepared in the same manner as in Example 1 except that the ZnO powder was 999.45 g, the La 2 O 3 powder was 0.23 g, and the B 2 O 3 powder was 0.32 g. A ZnO film was formed. The obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 1 below, the La concentration was 0.02 mass% and the B concentration was 0.01 mass%.
＜比較例２＞
ＺｎＯ粉末を７６５．４ｇ、Ｌａ2Ｏ3粉末を２３４．６ｇとし、Ｂ2Ｏ3粉末は添加しなかったこと以外は、実施例１と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表１に示すように、Ｌａ濃度が２０質量％であった。即ち、得られたＺｎＯ蒸着材はＢを含まない。
<Comparative example 2>
A ZnO vapor deposition material was prepared in the same manner as in Example 1 except that the ZnO powder was 765.4 g, the La 2 O 3 powder was 234.6 g, and the B 2 O 3 powder was not added. A ZnO film was formed. In addition, the obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 1 below, the La concentration was 20% by mass. That is, the obtained ZnO vapor deposition material does not contain B.
＜比較例３＞
ＺｎＯ粉末を２８２．３８ｇ、Ｌａ2Ｏ3粉末を２３４．６０ｇ、Ｂ2Ｏ3粉末を４８３．０２ｇとしたこと以外は、実施例１と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表１に示すように、Ｌａ濃度が２０質量％、Ｂ濃度が１５質量％であった。
<Comparative Example 3>
A ZnO vapor deposition material was prepared in the same manner as in Example 1 except that 282.38 g of the ZnO powder, 234.60 g of the La 2 O 3 powder, and 483.02 g of the B 2 O 3 powder were formed on the glass substrate. A ZnO film was formed. The obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 1 below, the La concentration was 20 mass% and the B concentration was 15 mass%.
＜比較例４＞
ＺｎＯ粉末を５１６．９８ｇ、Ｂ2Ｏ3粉末を４８３．０２ｇとし、Ｌａ2Ｏ3粉末は添加しなかったこと以外は、実施例１と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表１に示すように、Ｂ濃度が１５質量％であった。即ち、得られたＺｎＯ蒸着材は、Ｌａを含まない。
<Comparative Example 4>
A ZnO vapor deposition material was prepared in the same manner as in Example 1 except that the ZnO powder was 516.98 g, the B 2 O 3 powder was 483.02 g, and the La 2 O 3 powder was not added. A ZnO film was formed. The obtained ZnO vapor deposition material had a relative density of 95% and a B concentration of 15% by mass as shown in Table 1 below. That is, the obtained ZnO vapor deposition material does not contain La.
＜比較試験及び評価１＞
実施例１〜４及び比較例１〜４で成膜したＺｎＯ膜について、比抵抗及び透過率を測定した。その結果を以下の表１に示す。比抵抗は測定器（三菱化学株式会社 商品名：ロレスタ ＨＰ型、ＭＣＰ−Ｔ４１０、プローブ：直列１．５ｍｍピッチ）を用い、雰囲気が２５℃において定電流印加による４端子４探針法により測定した。また透過率は分光光度計（株式会社日立製作所製 Ｕ−４０００）を用い、可視光波長域（３８０〜７８０ｍｍ）について、成膜後の基板を測定光に対して垂直に設置して測定した。
<Comparison test and evaluation 1>
For the ZnO films formed in Examples 1 to 4 and Comparative Examples 1 to 4, specific resistance and transmittance were measured. The results are shown in Table 1 below. The specific resistance was measured by a 4-terminal 4-probe method by applying a constant current at 25 ° C. using a measuring instrument (Mitsubishi Chemical Corporation, trade name: Loresta HP type, MCP-T410, probe: series 1.5 mm pitch). . The transmittance was measured using a spectrophotometer (U-4000, manufactured by Hitachi, Ltd.) in the visible light wavelength range (380 to 780 mm) by placing the substrate after film formation perpendicular to the measurement light.
＜実施例５＞
先ず、ＺｎＯ粉末９９５．８１ｇと、Ｌａ2Ｏ3粉末２．３０ｇと、Ａｌ2Ｏ3粉末１．８９ｇと、バインダと、有機溶媒とを湿式ボールミルを用い、湿式混合してスラリーを調製した。調製したスラリーを噴霧乾燥し、得られた混合造粒粉末を１０００ＭＰａの圧力で加圧成形した後、１３００℃の温度で焼結し、ＺｎＯ蒸着材を作製した。
<Example 5>
First, a slurry was prepared by wet-mixing 995.81 g of ZnO powder, 2.30 g of La 2 O 3 powder, 1.89 g of Al 2 O 3 powder, a binder, and an organic solvent using a wet ball mill. The prepared slurry was spray-dried, and the obtained mixed granulated powder was pressure-molded at a pressure of 1000 MPa, and then sintered at a temperature of 1300 ° C. to produce a ZnO vapor deposition material.
得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表２に示すように、Ｌａ濃度が０．２質量％、Ａｌ濃度が０．１質量％である多結晶ＺｎＯのペレットであった。またペレットの直径及び厚さはそれぞれ５ｍｍ及び１．６ｍｍであった。 The obtained ZnO vapor deposition material has a relative density of 95% and, as shown in Table 2 below, a polycrystalline ZnO pellet having a La concentration of 0.2% by mass and an Al concentration of 0.1% by mass. Met. The diameter and thickness of the pellets were 5 mm and 1.6 mm, respectively.
次に、ガラス基板（無アルカリガラス）上に、上記ＺｎＯ蒸着材を用いて電子ビーム蒸着法により、膜厚２００ｎｍのＺｎＯ膜を成膜した。具体的には、直径５０ｍｍ、深さ２５ｍｍの電子ビーム蒸着装置のハースに仕込まれた上記ＺｎＯ蒸着材に、到達真空度２．６６×１０-4Ｐａ、酸素分圧１．３３×１０-2の雰囲気において、加速電圧１０ｋＶ、ビームスキャンエリア約４０ｍｍφの電子ビームを照射、加熱することにより行った。 Next, a 200 nm-thick ZnO film was formed on a glass substrate (non-alkali glass) by the electron beam evaporation method using the ZnO evaporation material. Specifically, the ultimate vacuum degree is 2.66 × 10 −4 Pa and the partial pressure of oxygen is 1.33 × 10 −2 on the ZnO vapor deposition material charged in the hearth of the electron beam vapor deposition apparatus having a diameter of 50 mm and a depth of 25 mm. In this atmosphere, an electron beam having an acceleration voltage of 10 kV and a beam scan area of about 40 mmφ was irradiated and heated.
＜実施例６＞
ＺｎＯ粉末を９４５．９ｇ、Ｌａ2Ｏ3粉末を３５．２ｇ、Ａｌ2Ｏ3粉末を１８．９ｇとしたこと以外は、実施例５と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表２に示すように、Ｌａ濃度が３質量％、Ａｌ濃度が１質量％であった。
<Example 6>
A ZnO vapor deposition material was prepared in the same manner as in Example 5 except that 945.9 g of ZnO powder, 35.2 g of La 2 O 3 powder, and 18.9 g of Al 2 O 3 powder were formed on the glass substrate. A ZnO film was formed. In addition, the obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 2 below, the La concentration was 3% by mass and the Al concentration was 1% by mass.
＜実施例７＞
ＺｎＯ粉末を８７２．９１ｇ、Ｌａ2Ｏ3粉末を７０．４０ｇ、Ａｌ2Ｏ3粉末を５６．６９ｇとしたこと以外は、実施例５と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表２に示すように、Ｌａ濃度が６質量％、Ａｌ濃度が３質量％であった。
<Example 7>
A ZnO vapor deposition material was prepared in the same manner as in Example 5 except that 872.91 g of ZnO powder, 70.40 g of La 2 O 3 powder, and 56.69 g of Al 2 O 3 powder were formed on the glass substrate. A ZnO film was formed. In addition, the obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 2 below, the La concentration was 6% by mass and the Al concentration was 3% by mass.
＜実施例８＞
ＺｎＯ粉末を６３６．３５ｇ、Ｌａ2Ｏ3粉末を１７４．７０ｇ、Ａｌ2Ｏ3粉末を１８８．９５ｇとしたこと以外は、実施例５と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表２に示すように、Ｌａ濃度が１４．９質量％、Ａｌ濃度が１０質量％であった。
<Example 8>
A ZnO vapor deposition material was prepared in the same manner as in Example 5 except that the ZnO powder was 636.35 g, the La 2 O 3 powder was 174.70 g, and the Al 2 O 3 powder was 188.95 g. A ZnO film was formed. In addition, the obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 2 below, the La concentration was 14.9% by mass and the Al concentration was 10% by mass.
＜比較例５＞
ＺｎＯ粉末を９９９．５８ｇ、Ｌａ2Ｏ3粉末を０．２３ｇ、Ａｌ2Ｏ3粉末を０．１９ｇとしたこと以外は、実施例５と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表２に示すように、Ｌａ濃度が０．０２質量％、Ａｌ濃度が０．０１質量％であった。
<Comparative Example 5>
A ZnO vapor deposition material was prepared in the same manner as in Example 5 except that 999.58 g of ZnO powder, 0.23 g of La 2 O 3 powder, and 0.19 g of Al 2 O 3 powder were used, and a glass substrate was prepared. A ZnO film was formed. In addition, the obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 2 below, the La concentration was 0.02 mass% and the Al concentration was 0.01 mass%.
＜比較例６＞
ＺｎＯ粉末を７６５．４ｇ、Ｌａ2Ｏ3粉末を２３４．６ｇとし、Ａｌ2Ｏ3粉末は添加しなかったこと以外は、実施例５と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表２に示すように、Ｌａ濃度が２０質量％であった。即ち、得られたＺｎＯ蒸着材はＡｌを含まない。
<Comparative Example 6>
A ZnO vapor deposition material was produced in the same manner as in Example 5 except that 765.4 g of ZnO powder, 234.6 g of La 2 O 3 powder, and Al 2 O 3 powder were not added. A ZnO film was formed. The obtained ZnO vapor deposition material had a relative density of 95% and a La concentration of 20% by mass as shown in Table 2 below. That is, the obtained ZnO vapor deposition material does not contain Al.
＜比較例７＞
ＺｎＯ粉末を４８１．９７ｇ、Ｌａ2Ｏ3粉末を２３４．６０ｇ、Ａｌ2Ｏ3粉末を２８３．４３ｇとしたこと以外は、実施例５と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表２に示すように、Ｌａ濃度が２０質量％、Ａｌ濃度が１５質量％であった。
<Comparative Example 7>
A ZnO vapor deposition material was prepared in the same manner as in Example 5 except that 481.97 g of ZnO powder, 234.60 g of La 2 O 3 powder, and 283.43 g of Al 2 O 3 powder were formed on a glass substrate. A ZnO film was formed. In addition, the obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 2 below, the La concentration was 20 mass% and the Al concentration was 15 mass%.
＜比較例８＞
ＺｎＯ粉末を７１６．５７ｇ、Ａｌ2Ｏ3粉末を２８３．４３ｇとし、Ｌａ2Ｏ3粉末は添加しなかったこと以外は、実施例５と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表２に示すように、Ａｌ濃度が１５質量％であった。即ち、得られたＺｎＯ蒸着材は、Ｌａを含まない。
<Comparative Example 8>
A ZnO vapor deposition material was prepared in the same manner as in Example 5 except that the ZnO powder was 716.57 g, the Al 2 O 3 powder was 283.43 g, and the La 2 O 3 powder was not added. A ZnO film was formed. The obtained ZnO vapor deposition material had a relative density of 95% and an Al concentration of 15% by mass as shown in Table 2 below. That is, the obtained ZnO vapor deposition material does not contain La.
＜比較試験及び評価２＞
実施例５〜８及び比較例５〜８で成膜したＺｎＯ膜について、上記比較試験及び評価１と同様の方法により、比抵抗及び透過率を測定した。その結果を以下の表２に示す。
<Comparison test and evaluation 2>
With respect to the ZnO films formed in Examples 5 to 8 and Comparative Examples 5 to 8, the specific resistance and the transmittance were measured by the same method as in the above comparative test and evaluation 1. The results are shown in Table 2 below.
＜実施例９＞
先ず、ＺｎＯ粉末９９６．３６ｇと、Ｌａ2Ｏ3粉末２．３０ｇと、Ｇａ2Ｏ3粉末１．３４ｇと、バインダと、有機溶媒とを湿式ボールミルを用い、湿式混合してスラリーを調製した。調製したスラリーを噴霧乾燥し、得られた混合造粒粉末を１０００ＭＰａの圧力で加圧成形した後、１３００℃の温度で焼結し、ＺｎＯ蒸着材を作製した。
<Example 9>
First, 996.36 g of ZnO powder, 2.30 g of La 2 O 3 powder, 1.34 g of Ga 2 O 3 powder, a binder, and an organic solvent were wet mixed using a wet ball mill to prepare a slurry. The prepared slurry was spray-dried, and the obtained mixed granulated powder was pressure-molded at a pressure of 1000 MPa, and then sintered at a temperature of 1300 ° C. to produce a ZnO vapor deposition material.
得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表３に示すように、Ｌａ濃度が０．２質量％、Ｇａ濃度が０．１質量％である多結晶ＺｎＯのペレットであった。またペレットの直径及び厚さはそれぞれ５ｍｍ及び１．６ｍｍであった。 The obtained ZnO vapor deposition material has a relative density of 95% and, as shown in Table 3 below, a polycrystalline ZnO pellet having a La concentration of 0.2% by mass and a Ga concentration of 0.1% by mass. Met. The diameter and thickness of the pellets were 5 mm and 1.6 mm, respectively.
次に、ガラス基板（無アルカリガラス）上に、上記ＺｎＯ蒸着材を用いて電子ビーム蒸着法により、膜厚２００ｎｍのＺｎＯ膜を成膜した。具体的には、直径５０ｍｍ、深さ２５ｍｍの電子ビーム蒸着装置のハースに仕込まれた上記ＺｎＯ蒸着材に、到達真空度２．６６×１０-4Ｐａ、酸素分圧１．３３×１０-2の雰囲気において、加速電圧１０ｋＶ、ビームスキャンエリア約４０ｍｍφの電子ビームを照射、加熱することにより行った。 Next, a 200 nm-thick ZnO film was formed on a glass substrate (non-alkali glass) by the electron beam evaporation method using the ZnO evaporation material. Specifically, the ultimate vacuum degree is 2.66 × 10 −4 Pa and the partial pressure of oxygen is 1.33 × 10 −2 on the ZnO vapor deposition material charged in the hearth of the electron beam vapor deposition apparatus having a diameter of 50 mm and a depth of 25 mm. In this atmosphere, an electron beam having an acceleration voltage of 10 kV and a beam scan area of about 40 mmφ was irradiated and heated.
＜実施例１０＞
ＺｎＯ粉末を９５１．３６ｇ、Ｌａ2Ｏ3粉末を３５．２０ｇ、Ｇａ2Ｏ3粉末を１３．４４ｇとしたこと以外は、実施例９と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表３に示すように、Ｌａ濃度が３質量％、Ｇａ濃度が１質量％であった。
<Example 10>
A ZnO vapor deposition material was prepared in the same manner as in Example 9 except that 951.36 g of ZnO powder, 35.20 g of La 2 O 3 powder, and 13.44 g of Ga 2 O 3 powder were used, and a glass substrate was prepared. A ZnO film was formed. In addition, the obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 3 below, the La concentration was 3 mass% and the Ga concentration was 1 mass%.
＜実施例１１＞
ＺｎＯ粉末を８８９．２７ｇ、Ｌａ2Ｏ3粉末を７０．４０ｇ、Ｇａ2Ｏ3粉末を４０．３３ｇとしたこと以外は、実施例９と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表３に示すように、Ｌａ濃度が６質量％、Ｇａ濃度が３質量％であった。
<Example 11>
A ZnO vapor deposition material was produced in the same manner as in Example 9 except that 889.27 g of ZnO powder, 70.40 g of La 2 O 3 powder, and 40.33 g of Ga 2 O 3 powder were prepared, A ZnO film was formed. In addition, the obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 3 below, the La concentration was 6 mass% and the Ga concentration was 3 mass%.
＜実施例１２＞
ＺｎＯ粉末を６９０．８７ｇ、Ｌａ2Ｏ3粉末を１７４．７０ｇ、Ｇａ2Ｏ3粉末を１３４．４３ｇとしたこと以外は、実施例９と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表３に示すように、Ｌａ濃度が１４．９質量％、Ｇａ濃度が１０質量％であった。
<Example 12>
A ZnO vapor deposition material was prepared in the same manner as in Example 9 except that the ZnO powder was 690.87 g, the La 2 O 3 powder was 174.70 g, and the Ga 2 O 3 powder was 134.43 g. A ZnO film was formed. The obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 3 below, the La concentration was 14.9% by mass and the Ga concentration was 10% by mass.
＜比較例９＞
ＺｎＯ粉末を９９９．６４ｇ、Ｌａ2Ｏ3粉末を０．２３ｇ、Ｇａ2Ｏ3粉末を０．１３ｇとしたこと以外は、実施例９と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表３に示すように、Ｌａ濃度が０．０２質量％、Ｇａ濃度が０．０１質量％であった。
<Comparative Example 9>
A ZnO vapor deposition material was prepared in the same manner as in Example 9 except that 999.64 g of ZnO powder, 0.23 g of La 2 O 3 powder, and 0.13 g of Ga 2 O 3 powder were used, and a glass substrate was prepared. A ZnO film was formed. In addition, the obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 3 below, the La concentration was 0.02 mass% and the Ga concentration was 0.01 mass%.
＜比較例１０＞
ＺｎＯ粉末を７６５．４ｇ、Ｌａ2Ｏ3粉末を２３４．６ｇとし、Ｇａ2Ｏ3粉末は添加しなかったこと以外は、実施例９と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表３に示すように、Ｌａ濃度が２０質量％であった。即ち、得られたＺｎＯ蒸着材はＧａを含まない。
<Comparative Example 10>
A ZnO vapor deposition material was prepared in the same manner as in Example 9 except that the ZnO powder was 765.4 g, the La 2 O 3 powder was 234.6 g, and the Ga 2 O 3 powder was not added. A ZnO film was formed. The obtained ZnO vapor deposition material had a relative density of 95% and a La concentration of 20% by mass as shown in Table 3 below. That is, the obtained ZnO vapor deposition material does not contain Ga.
＜比較例１１＞
ＺｎＯ粉末を５６３．７５ｇ、Ｌａ2Ｏ3粉末を２３４．６０ｇ、Ｇａ2Ｏ3粉末を２０１．６５ｇとしたこと以外は、実施例９と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表３に示すように、Ｌａ濃度が２０質量％、Ｇａ濃度が１５質量％であった。
<Comparative Example 11>
A ZnO vapor deposition material was produced in the same manner as in Example 9 except that 563.75 g of ZnO powder, 234.60 g of La 2 O 3 powder, and 201.65 g of Ga 2 O 3 powder were prepared, A ZnO film was formed. In addition, the obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 3 below, the La concentration was 20 mass% and the Ga concentration was 15 mass%.
＜比較例１２＞
ＺｎＯ粉末を７９８．３５ｇ、Ｇａ2Ｏ3粉末を２０１．６５ｇとし、Ｌａ2Ｏ3粉末は添加しなかったこと以外は、実施例９と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表３に示すように、Ｇａ濃度が１５質量％であった。即ち、得られたＺｎＯ蒸着材は、Ｌａを含まない。
<Comparative Example 12>
A ZnO vapor deposition material was prepared in the same manner as in Example 9 except that the ZnO powder was 798.35 g, the Ga 2 O 3 powder was 201.65 g, and the La 2 O 3 powder was not added. A ZnO film was formed. The obtained ZnO vapor deposition material had a relative density of 95% and a Ga concentration of 15% by mass as shown in Table 3 below. That is, the obtained ZnO vapor deposition material does not contain La.
＜比較試験及び評価３＞
実施例９〜１２及び比較例９〜１２で成膜したＺｎＯ膜について、上記比較試験及び評価１と同様の方法により、比抵抗及び透過率を測定した。その結果を以下の表３に示す。
<Comparative test and evaluation 3>
With respect to the ZnO films formed in Examples 9 to 12 and Comparative Examples 9 to 12, specific resistance and transmittance were measured by the same method as in the above comparative test and evaluation 1. The results are shown in Table 3 below.
＜実施例１３＞
先ず、ＺｎＯ粉末９９６．１７ｇと、Ｌａ2Ｏ3粉末２．３０ｇと、Ｓｃ2Ｏ3粉末１．５３ｇと、バインダと、有機溶媒とを湿式ボールミルを用い、湿式混合してスラリーを調製した。調製したスラリーを噴霧乾燥し、得られた混合造粒粉末を１０００ＭＰａの圧力で加圧成形した後、１３００℃の温度で焼結し、ＺｎＯ蒸着材を作製した。
<Example 13>
First, 996.17 g of ZnO powder, 2.30 g of La 2 O 3 powder, 1.53 g of Sc 2 O 3 powder, a binder, and an organic solvent were wet mixed using a wet ball mill to prepare a slurry. The prepared slurry was spray-dried, and the obtained mixed granulated powder was pressure-molded at a pressure of 1000 MPa, and then sintered at a temperature of 1300 ° C. to produce a ZnO vapor deposition material.
得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表４に示すように、Ｌａ濃度が０．２質量％、Ｓｃ濃度が０．１質量％である多結晶ＺｎＯのペレットであった。またペレットの直径及び厚さはそれぞれ５ｍｍ及び１．６ｍｍであった。 The obtained ZnO vapor deposition material has a relative density of 95% and, as shown in Table 4 below, a polycrystalline ZnO pellet having a La concentration of 0.2% by mass and an Sc concentration of 0.1% by mass. Met. The diameter and thickness of the pellets were 5 mm and 1.6 mm, respectively.
次に、ガラス基板（無アルカリガラス）上に、上記ＺｎＯ蒸着材を用いて電子ビーム蒸着法により、膜厚２００ｎｍのＺｎＯ膜を成膜した。具体的には、直径５０ｍｍ、深さ２５ｍｍの電子ビーム蒸着装置のハースに仕込まれた上記ＺｎＯ蒸着材に、到達真空度２．６６×１０-4Ｐａ、酸素分圧１．３３×１０-2の雰囲気において、加速電圧１０ｋＶ、ビームスキャンエリア約４０ｍｍφの電子ビームを照射、加熱することにより行った。 Next, a 200 nm-thick ZnO film was formed on a glass substrate (non-alkali glass) by the electron beam evaporation method using the ZnO evaporation material. Specifically, the ultimate vacuum degree is 2.66 × 10 −4 Pa and the partial pressure of oxygen is 1.33 × 10 −2 on the ZnO vapor deposition material charged in the hearth of the electron beam vapor deposition apparatus having a diameter of 50 mm and a depth of 25 mm. In this atmosphere, an electron beam having an acceleration voltage of 10 kV and a beam scan area of about 40 mmφ was irradiated and heated.
＜実施例１４＞
ＺｎＯ粉末を９４９．４６ｇ、Ｌａ2Ｏ3粉末を３５．２０ｇ、Ｓｃ2Ｏ3粉末を１５．３４ｇとしたこと以外は、実施例１３と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表４に示すように、Ｌａ濃度が３質量％、Ｓｃ濃度が１質量％であった。
<Example 14>
A ZnO vapor deposition material was prepared in the same manner as in Example 13 except that 949.46 g of ZnO powder, 35.20 g of La 2 O 3 powder, and 15.34 g of Sc 2 O 3 powder were formed on a glass substrate. A ZnO film was formed. In addition, the obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 4 below, the La concentration was 3% by mass and the Sc concentration was 1% by mass.
＜実施例１５＞
ＺｎＯ粉末を８８３．５９ｇ、Ｌａ2Ｏ3粉末を７０．４０ｇ、Ｓｃ2Ｏ3粉末を４６．０１ｇとしたこと以外は、実施例１３と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表４に示すように、Ｌａ濃度が６質量％、Ｓｃ濃度が３質量％であった。
<Example 15>
A ZnO vapor deposition material was prepared in the same manner as in Example 13 except that 883.59 g of ZnO powder, 70.40 g of La 2 O 3 powder, and 46.01 g of Sc 2 O 3 powder were formed on the glass substrate. A ZnO film was formed. In addition, the obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 4 below, the La concentration was 6% by mass and the Sc concentration was 3% by mass.
＜実施例１６＞
ＺｎＯ粉末を６７１．９２ｇ、Ｌａ2Ｏ3粉末を１７４．７０ｇ、Ｓｃ2Ｏ3粉末を１５３．３８ｇとしたこと以外は、実施例１３と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表４に示すように、Ｌａ濃度が１４．９質量％、Ｓｃ濃度が１０質量％であった。
<Example 16>
A ZnO vapor deposition material was prepared in the same manner as in Example 13 except that the ZnO powder was 671.92 g, the La 2 O 3 powder was 174.70 g, and the Sc 2 O 3 powder was 153.38 g. A ZnO film was formed. In addition, the obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 4 below, the La concentration was 14.9% by mass and the Sc concentration was 10% by mass.
＜比較例１３＞
ＺｎＯ粉末を９９９．６２ｇ、Ｌａ2Ｏ3粉末を０．２３ｇ、Ｓｃ2Ｏ3粉末を０．１５ｇとしたこと以外は、実施例１３と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表４に示すように、Ｌａ濃度が０．０２質量％、Ｓｃ濃度が０．０１質量％であった。
<Comparative Example 13>
A ZnO vapor deposition material was prepared in the same manner as in Example 13 except that 99.62 g of ZnO powder, 0.23 g of La 2 O 3 powder, and 0.15 g of Sc 2 O 3 powder were prepared, and the resultant was placed on a glass substrate. A ZnO film was formed. In addition, the obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 4 below, the La concentration was 0.02 mass% and the Sc concentration was 0.01 mass%.
＜比較例１４＞
ＺｎＯ粉末を７６５．４ｇ、Ｌａ2Ｏ3粉末を２３４．６ｇとし、Ｓｃ2Ｏ3粉末は添加しなかったこと以外は、実施例１３と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表４に示すように、Ｌａ濃度が２０質量％であった。即ち、得られたＺｎＯ蒸着材はＳｃを含まない。
<Comparative example 14>
A ZnO vapor deposition material was prepared in the same manner as in Example 13 except that the ZnO powder was 765.4 g, the La 2 O 3 powder was 234.6 g, and the Sc 2 O 3 powder was not added. A ZnO film was formed. The obtained ZnO vapor deposition material had a relative density of 95% and a La concentration of 20% by mass as shown in Table 4 below. That is, the obtained ZnO vapor deposition material does not contain Sc.
＜比較例１５＞
ＺｎＯ粉末を５３５．３３ｇ、Ｌａ2Ｏ3粉末を２３４．６０ｇ、Ｓｃ2Ｏ3粉末を２３０．０７ｇとしたこと以外は、実施例１３と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表４に示すように、Ｌａ濃度が２０質量％、Ｓｃ濃度が１５質量％であった。
<Comparative Example 15>
A ZnO vapor deposition material was prepared in the same manner as in Example 13 except that 535.33 g of ZnO powder, 234.60 g of La 2 O 3 powder, and 230.07 g of Sc 2 O 3 powder were prepared, and the resultant was formed on a glass substrate. A ZnO film was formed. In addition, the obtained ZnO vapor deposition material had a relative density of 95%, and as shown in Table 4 below, the La concentration was 20 mass% and the Sc concentration was 15 mass%.
＜比較例１６＞
ＺｎＯ粉末を７６９．９３ｇ、Ｓｃ2Ｏ3粉末を２３０．０７ｇとし、Ｌａ2Ｏ3粉末は添加しなかったこと以外は、実施例１３と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、また以下の表４に示すように、Ｓｃ濃度が１５質量％であった。即ち、得られたＺｎＯ蒸着材は、Ｌａを含まない。
<Comparative Example 16>
A ZnO vapor deposition material was produced in the same manner as in Example 13 except that 769.93 g of ZnO powder, 230.07 g of Sc 2 O 3 powder, and La 2 O 3 powder were not added. A ZnO film was formed. In addition, the obtained ZnO vapor deposition material had a relative density of 95% and, as shown in Table 4 below, the Sc concentration was 15% by mass. That is, the obtained ZnO vapor deposition material does not contain La.
＜比較例１７＞
ＺｎＯ粉末を１０００ｇとし、Ｌａ2Ｏ3粉末、Ｂ2Ｏ3粉末、Ａｌ2Ｏ3粉末、Ｇａ2Ｏ3粉末又はＳｃ2Ｏ3粉末を添加しなかったこと以外は、実施例１、５、９又は１３と同様に、ＺｎＯ蒸着材を作製し、ガラス基板上にＺｎＯ膜を成膜した。なお、得られたＺｎＯ蒸着材は、相対密度が９５％であり、Ｌａ、Ｂ、Ａｌ、Ｇａ又はＳｃのいずれをも含まないＺｎＯ蒸着材であった。
<Comparative Example 17>
Examples 1 and 5 except that the ZnO powder was 1000 g and no La 2 O 3 powder, B 2 O 3 powder, Al 2 O 3 powder, Ga 2 O 3 powder or Sc 2 O 3 powder was added. Similarly to 9 or 13, a ZnO vapor deposition material was produced, and a ZnO film was formed on a glass substrate. In addition, the obtained ZnO vapor deposition material was a ZnO vapor deposition material which has a relative density of 95% and does not contain any of La, B, Al, Ga, or Sc.
＜比較試験及び評価４＞
実施例１３〜１６及び比較例１３〜１７で成膜したＺｎＯ膜について、上記比較試験及び評価１と同様の方法により、比抵抗及び透過率を測定した。その結果を以下の表４に示す。
<Comparative test and evaluation 4>
With respect to the ZnO films formed in Examples 13 to 16 and Comparative Examples 13 to 17, specific resistance and transmittance were measured by the same method as in the above comparative test and evaluation 1. The results are shown in Table 4 below.
表１〜４から明らかなように、実施例１〜１６と比較例１〜１７を比較すると、実施例１〜１６のＺｎＯ膜が有する比抵抗はいずれも比較例１〜１７よりも低い結果となった。また透過率については、実施例１〜１６のＺｎＯ膜が、比較例１、５、９、１３又は１７と同等或いは若干低かったものの、比較例２〜４、６〜８、１０〜１２又は１４〜１６と比較すれば、十分に高い透過率が得られたと言える。このことから、本発明のＺｎＯ蒸着材が効果的であることが確認された。 As is clear from Tables 1 to 4, when Examples 1 to 16 and Comparative Examples 1 to 17 are compared, the specific resistances of the ZnO films of Examples 1 to 16 are lower than those of Comparative Examples 1 to 17. became. Moreover, about the transmittance | permeability, although the ZnO film | membrane of Examples 1-16 was equivalent to the comparative example 1, 5, 9, 13 or 17, or slightly low, it was comparative examples 2-4, 6-8, 10-12 or 14 Compared to ˜16, it can be said that a sufficiently high transmittance was obtained. From this, it was confirmed that the ZnO vapor deposition material of the present invention is effective.
Claims (5)
ＺｎＯを主成分としたペレットからなり、
前記ペレットがＬａと、Ｂ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素を含み、
前記Ｌａが前記Ｂ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素よりも含有割合が高く、
前記Ｌａの含有割合が０．１〜１４．９質量％、前記Ｂ、Ａｌ、Ｇａ及びＳｃからなる群より選ばれた１種又は２種以上の元素の含有割合が０．１〜１０質量％の範囲内である
ことを特徴とするＺｎＯ蒸着材。 In a ZnO vapor deposition material used for forming a transparent conductive film,
Consisting of pellets based on ZnO,
The pellet contains La and one or more elements selected from the group consisting of B, Al, Ga and Sc;
The La content is higher than one or more elements selected from the group consisting of B, Al, Ga and Sc,
The content of La is 0.1 to 14.9% by mass, and the content of one or more elements selected from the group consisting of B, Al, Ga and Sc is 0.1 to 10% by mass. The ZnO vapor deposition material characterized by being in the range.
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| JP2010132535A (en) * | 2008-10-27 | 2010-06-17 | Mitsubishi Materials Corp | METHOD OF MANUFACTURING ZnO DEPOSITION MATERIAL |
| JP2010150093A (en) * | 2008-12-25 | 2010-07-08 | Tosoh Corp | Method for producing sintered compact for transparent electroconductive film |
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