JP2008251117A - Light emitting element substrate, heat assist magnetic head, head gimbal assembly and hard disk device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting element substrate in which a semiconductor light emitting element chip is mounted on a supporting substrate in a state in which damage to the chip is less, a heat assist magnetic head which is formed by attaching the light emitting element substrate to a slider and is highly reliable, a head gimbal assembly using such heat assist magnetic head, and a hard disk device. <P>SOLUTION: One surface F1 of a semiconductor light emitting element chip 21B is fixed to an electrode region E1 of a supporting substrate. A plurality of electrode regions E1, E2, E3 are provided on an insulation layer 21B<SB>2</SB>on the supporting substrate. A wire W is provided so that both ends are fixed respectively to the electrode regions E1, E2, E3, and strides over the another surface F2 of the semiconductor light emitting element chip 21B<SB>3</SB>, and is connected electrically to the another surface F2. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a light-emitting element substrate, a heat-assisted magnetic head, a head gimbal assembly, and a hard disk device.

  As the density of hard disks (HDDs) increases, the performance of thin film magnetic heads is required to be improved. As a thin film magnetic head, a composite thin film magnetic head having a structure in which a reproducing head having a magnetoresistive element (MR element) for reading and a recording head having an inductive electromagnetic transducer for writing is laminated is widely used. Yes.

  In magnetic recording, the recording medium is made of a discontinuous medium of magnetic fine particles, and each magnetic fine particle has a single magnetic domain structure. A plurality of fine particles are used for recording. In order to increase the recording density, the unevenness of the boundary between the recording areas must be reduced. For this purpose, the magnetic fine particles must be made small, but there is a problem that thermal stability deteriorates if the volume of the fine particles is reduced.

A measure of thermal stability in a magnetic head is given by K _u V / k _B T. Here, _Ku is the anisotropy energy of the magnetic fine particles, V is the volume of one magnetic fine particle, k _B is the Boltzmann constant, and T is the absolute temperature. When the volume V of the magnetic fine particles is reduced, the value of K _u V / k _B T is reduced and the thermal stability is lowered. By increasing the coercive force, increasing the coefficient K _U, techniques for increasing the thermal stability is also considered. However, the coercivity of the medium has an inherent upper limit. The magnetic flux density received by the medium is limited to the magnitude of the magnetic field generated by the magnetic head during recording, and the magnitude of this magnetic field is also limited to the saturation magnetic flux density of the soft magnetic material of the core.

Thus, as a method for solving the problem of thermal stability, a magnetic material having a large coefficient _Ku is used. However, a method has been proposed in which recording is performed by applying heat simultaneously to the medium during recording to lower the coercive force. This recording method is called heat-assisted magnetic recording. This is very similar to magneto-optical recording, but magneto-optical recording has spatial resolution in the light, whereas thermally-assisted magnetic recording has spatial resolution in the magnetic field. Patent Document 1 below discloses a technique of recording a superfine magnetic domain signal with a superfine light beam spot on a magneto-optical disk using a head using a solid immersion lens in a recording / reproducing apparatus.

  Several methods have been proposed for heat-assisted magnetic recording.

  Patent Document 2 below discloses a technique related to optical recording using a near-field probe. The near-field probe is composed of a metal scatterer having a shape of a cone or a triangle formed on a substrate and a film such as a dielectric formed around the scatterer.

  Patent Document 3 below discloses a technique in which a scatterer constituting a near-field probe is formed in contact with a main magnetic pole of a single magnetic pole write head for perpendicular magnetic recording so as to be perpendicular to a recording medium. According to Patent Document 3, the light emission surface of a light source (semiconductor laser or optical fiber) needs to be installed in a location parallel to the medium surface and close to the medium surface. In this structure, the light source may collide with the medium, which is not preferable from the viewpoint of the reliability of the hard disk drive.

  On the other hand, Patent Document 3 also proposes a device for moving the light source away from the medium surface by refracting incident light by 90 degrees using a mirror. When it is directly mounted on the slider body, inconvenience occurs in terms of production yield. In general, it is very difficult to perform characteristic evaluation (output power, spread angle, life, etc.) of an LD (laser diode) chip alone. Therefore, the LD characteristics are evaluated after the LD chip is mounted on the slider. Since the yield of the assembled product is determined by multiplying both the yield of the head itself and the yield of the laser diode, if the characteristic inspection is performed after assembly, the yield will be lower than the case of assembling after individual inspection. . When adopting a design in which light is introduced into the slider using an optical fiber or the like, the characteristics can be individually evaluated, so that the yield problem is solved. However, there is a concern that light is greatly lost due to the coupling portion of the light to the optical fiber and the coupling from the optical fiber to the waveguide.

  From the above viewpoint, it is considered that the LD holder unit structure is preferable for the thermally assisted magnetic head. In the LD holder unit, a support substrate on which an LD chip is mounted is attached to a slider, and a reduction in coupling loss can be suppressed. An optical waveguide is formed on the slider, and light from the LD chip enters the slider. The thermal conductivity of the support substrate of the LD chip may be set to be equal to or higher than the thermal conductivity of the slider. Thereby, the heat generated by the LD chip can be effectively moved away from the slider.

  Power must be supplied to the LD chip. In order to supply power to the LD chip, it is usually necessary to apply a voltage between the upper and lower surfaces of the LD of the chip. As a technique for supplying power to the LD chip, there is a wire bonding method. In the wire bonding method, a high frequency is applied to the upper surface of the LD chip, and the Au wire is attached to the upper surface of the LD using this high frequency heating.

According to the method described in Patent Document 4 below, a structure is provided in which a depressed portion leading to the lower electrode is provided in a part of the LD chip without using the wire bonding method, and both the upper and lower electrodes are drawn from the lower surface of the LD chip at once. Adopted.
JP-A-10-162444 JP 2001-255254 A JP 2004-158067 A JP-A-7-235729 IEEE Trans. Magn. Vol. 41, p2817 (2005)

  However, when the wire bonding method is used, pressure and high frequency during bonding are applied to the upper surface of the LD chip, and the characteristics of the LD chip may deteriorate. Of course, when the through-hole method described in Patent Document 4 is used, it is difficult to control the height of the conductor column on the submount side provided to conduct to the electrode portion of the LD chip. This is because if the conductor column is too short, conduction cannot be obtained, and if it is too long, stress is applied to the LD chip. In particular, since a GaAs-based LD is very brittle, a decrease in reliability due to application of stress is not preferable for a thin-film magnetic head used under severe conditions such as a hard disk.

  The present invention has been made in view of such problems, and a light-emitting element substrate in which a semiconductor light-emitting element chip is mounted on a support substrate with little damage, and a light-emitting element substrate attached to a slider. An object of the present invention is to provide a reliable heat-assisted magnetic head, a head gimbal assembly using such a heat-assisted magnetic head, and a hard disk drive.

  In order to solve the above-described problems, a light-emitting element substrate according to the present invention is a light-emitting element substrate in which one surface of a semiconductor light-emitting element chip is fixed to a support substrate, and a plurality of electrode regions provided on the support substrate; Both ends are respectively fixed to the electrode region, and are provided so as to straddle the other surface of the semiconductor light emitting element chip, and are electrically connected to the other surface.

  According to the present invention, the wire straddles the other surface of the semiconductor light emitting element chip and is electrically connected to the other surface of the semiconductor light emitting element chip without being pressed by a so-called wire bonding method. Damage to the light emitting element chip is reduced, and characteristic deterioration is suppressed. When a voltage is applied between the electrode region and one side of the semiconductor light emitting element chip, a current flows between the one side and the other side of the semiconductor light emitting element chip, and the semiconductor light emitting element chip emits light.

  The wire may hold the electrical connection by directly contacting the other surface of the semiconductor light emitting device chip. However, in order to reduce the contact resistance, the light emitting device substrate according to the present invention includes the wire and the other surface. It is preferable to further include a conductive connecting agent for electrical connection. Examples of the conductive connecting agent include a conductive adhesive such as a conductive paste, solder, and the like.

  If a conductive connecting agent is used, it is preferable that the wire and the other surface are not in contact with each other. In this case, since the wire itself hardly applies stress to the other surface, the deterioration of the semiconductor light emitting element chip can be further suppressed.

  Further, if a groove is provided on the other surface of the semiconductor light emitting element chip and the conductive connecting agent is located in this groove, the conductive connecting agent is more likely to be restrained in the groove, and the conductive connection agent Positioning of the agent becomes easy. When the wire extends in the groove or above the groove, the conductive connecting agent and the wire are more likely to be reliably connected, and the connection reliability can be improved.

  The semiconductor light-emitting element chip has the other surface and a pair of opposing side surfaces that are adjacent to the other surface and are located in a region where the wire crosses when viewed from the other surface side. Are characterized by an obtuse angle. The side corners of the chip that intersect the direction in which the wire extends are chamfered, and the wire can straddle the other surface without contacting the corner of the chip. In this case, the stress applied to the side surface can be reduced as compared with the case where the wire is in contact with the corner portion, and the wire length can be shortened as compared with the case where the wire extends around the corner portion. That is, the material cost can be reduced.

  Moreover, when using an electroconductive connection agent, the number of wires is plural, it is good also as a wire crossing on the other surface seeing from the other surface side, and the electroconductive connection agent being provided in this intersection. When wires are arranged such that a plurality of linear wires have intersections, the other surface of the semiconductor light emitting element chip and the positions of the intersections tend to be fixed two-dimensionally. That is, the allowable movement amount of the wire tends to be smaller in the extending direction than in the direction perpendicular to the extending direction. Therefore, by crossing the wires, the relative movement amount of the intersection with respect to the other surface at the time of thermal expansion or contraction can be regulated. Thereby, since peeling from the other surface of a wire or a conductive adhesive decreases, the reliability of a light emitting element substrate improves.

  The number of wires may be plural, the shape of the other surface may be a polygon, and the wire may cross the corner of the other surface when viewed from the other surface side. In this case, since the wire tends to fix the position of the corner, it is possible to suppress in-plane movement of the other surface of the semiconductor light emitting element chip by restraining the position of the plurality of corners with the wire. .

  In addition, a thermally-assisted magnetic head according to the present invention includes the above-described light emitting element substrate and a magnetic recording element, and a slider to which the light emitting element substrate is attached so that light from the semiconductor light emitting element chip is guided to the medium facing surface. It is characterized by providing. According to this heat-assisted magnetic head, the light from the semiconductor light-emitting element chip is guided to the recording area of the magnetic recording medium via the slider, so that the holding force of the magnetic substance in the storage area is temporarily caused by the heating by the light. descend. At this time, if a magnetic field for writing is generated around the magnetic recording element of the slider, information corresponding to the magnetic field generated in the storage area can be written. That is, since writing can be performed even using a magnetic material having high holding power, the particle diameter of the magnetic fine particles can be reduced while ensuring thermal stability, so that the recording density can be increased. Since the relative position between the light emitting element substrate and the slider is fixed, light from the semiconductor light emitting element chip can be guided to the recording area with high reliability.

  A head gimbal assembly according to the present invention includes the above-described thermally-assisted magnetic head and a suspension that supports the thermally-assisted magnetic head. This head gimbal assembly has a high yield and reliability.

  A hard disk device according to the present invention includes the above-described head gimbal assembly and a magnetic recording medium facing the medium facing surface. Since the hard disk device includes the above-described head gimbal assembly, it can be manufactured with a high yield and operates with high reliability.

  According to the light emitting element substrate of the present invention, the semiconductor light emitting element chip is mounted on the support substrate with little damage, and the thermally assisted magnetic head, the head gimbal assembly, and the hard disk device using the chip operate with high reliability. Will be.

  Hereinafter, a light-emitting element substrate, a thermally-assisted magnetic head, a head gimbal assembly, and a hard disk device according to embodiments will be described. The same reference numerals are used for the same elements, and redundant description is omitted.

  FIG. 1 is a perspective view of a hard disk device according to an embodiment.

  The hard disk device 1 includes a magnetic disk 10 that is a plurality of magnetic recording media rotating around a rotation axis of a spindle motor 11, an assembly carriage device 12 for positioning a heat-assisted magnetic head 21 on a track, and the heat-assisted magnetic head. A recording / reproducing and light emission control circuit (control circuit) 13 for controlling a laser diode (semiconductor light emitting element) which is a light source for controlling the writing and reading operations of 21 and generating laser light for heat-assisted magnetic recording is provided. Yes.

  The assembly carriage device 12 is provided with a plurality of drive arms 14. These drive arms 14 can swing around a pivot bearing shaft 16 by a voice coil motor (VCM) 15 and are stacked in a direction along the shaft 16. A head gimbal assembly (HGA) 17 is attached to the tip of each drive arm 14. Each HGA 17 is provided with a heat-assisted magnetic head 21 so as to face the surface of each magnetic disk 10. A surface facing the surface of the magnetic disk 10 is a medium facing surface (ABS) S of the heat-assisted magnetic head 21. The magnetic disk 10, the drive arm 14, the HGA 17, and the heat-assisted magnetic head 21 may be singular.

  FIG. 2 is a perspective view of the HGA 17. This figure shows the HGA 17 with the medium facing surface S facing up.

  The HGA 17 is configured by fixing the thermally assisted magnetic head 21 to the tip of the suspension 20 and electrically connecting one end of the wiring member 203 to the terminal electrode of the thermally assisted magnetic head 21. The suspension 20 includes a load beam 200, a flexure 201 having elasticity fixedly supported on the load beam 200, a tongue portion 204 formed in a leaf spring shape at the tip of the flexure 201, and a base portion of the load beam 200. And a wiring member 203 comprising a lead conductor and a connection pad electrically connected to both ends of the lead conductor.

  It is obvious that the suspension structure in the HGA 17 is not limited to the structure described above. Although not shown, a head driving IC chip may be mounted in the middle of the suspension 20.

  FIG. 3 is a perspective view of the heat-assisted magnetic head 21.

  The track width direction of the recording medium is defined as the X axis, the recording bit arrangement direction immediately below the heat-assisted magnetic head 21 is defined as the Y axis, the medium facing surface S is defined as the XY plane, and the axis perpendicular to the XY plane is defined as the Z axis.

The heat-assisted magnetic head 21 includes a slider 21A and a light emitting element substrate 21B. The medium facing surface S of the slider 21A faces the recording area R of the medium. Slider 21A has a slider substrate 21A _1, and a magnetic head unit 21A ₂ formed on the ZX plane of the slider substrate 21A _1. The magnetic head unit 21A ₂ includes a magnetoresistive element (MR element) _{21A 21} exposed on the medium facing surface S, is on the Y-axis direction extension line of the MR element are the main magnetic pole _{21A 22} is arranged.

In the vicinity of the main magnetic pole _{21A 22} plasmon probe (near-field light generating portion) _{21A 23} is disposed. Near-field light generating part _{21A 23} is located on the light exit surface _{21A 25} of the core _{21A 24} of buried optical waveguide in the magnetic head unit 21A2. As the structure of the core 21A ₂₄ of the optical waveguide, a plurality of structures are known in addition to the straight waveguide, and in FIG. The core 21A _{24 of the} optical waveguide includes a light incident surface 21A _{26 on} which laser light is incident. The main magnetic pole _{21A 22} extends toward the medium facing surface S from the coil _{21A 27} for writing magnetic field generating embedded in the magnetic head unit 21A in _2.

The light emitting element substrate 21B is provided with a supporting substrate 21B ₁ made of heat dissipation of the metal material, a semiconductor light-emitting element chips (laser diode) 21B ₃ mounted on the XZ plane of the supporting substrate 21B _1. The support substrate 21B ₁ is made of AlTiC (Al ₂ O ₃ —TiC) or the like, and the XZ surface of the support substrate 21B ₁ is covered with an insulating layer 21B ₂ , and the semiconductor light emitting element chip 21B ₃ is fixed on this plane. . On the support substrate 21B ₁ on the insulating layer 21B ₂ are a plurality of electrode pads (electrode area) E1, E2, E3 are formed. On the electrode region E1 is one surface of the semiconductor light-emitting device chip 21B ₃ is fixed via the conductive adhesive or the like. Between the electrode and the region E2 E3 and wire W is provided, the central portion of the wire W is located on the other surface of the semiconductor light-emitting device chip 21B _3, the other surface and the wire W electrically conductive connection material B is electrically connected by B.

  FIG. 4 is a perspective view of the semiconductor light emitting element chip 21B3.

The semiconductor light emitting device chip 21B ₃ includes a sandwiched active layer A between the lower cladding layer C1 and the upper cladding layer C2, the light-emitting region ER located in the center of the end face of the active layer A, the laser beam The light is emitted in the negative direction of the Z axis. Are PN junction is formed inside the semiconductor light-emitting device chip 21B _3. The structure of the semiconductor light-emitting device chip 21B _3, although a variety of forms are known, the basic structure is as described above. Known are those using a quantum well structure as the active layer A, those having a plurality of cladding layers, those having a buffer layer as required, and those having a cap layer that suppresses evaporation of elements during heat treatment. and that although, as the semiconductor light-emitting device chip 21B _3, can be adopted of any form, the semiconductor light-emitting element chip semiconductor light-emitting element perpendicular to the stacking direction of the semiconductor layer constituting a pair of flat, i.e. the upper and lower surfaces Are formed with electrode layers e1 and e2 for voltage application, respectively.

  Refer to FIG. 3 again.

The magnetic head unit 21A ₂ is constituted by a majority of the insulator is embedded each element therein. Semiconductor light-emitting device chip 21B ₃ of the exposed XZ plane is the electrode group G1 formed a plurality of electrode pads, each of the electrode pads, the aforementioned respective elements embedded in the magnetic head unit 21A in ₂ Is electrically connected. An electrode group G2 is formed at the tip of the suspension 20, and the electrode pads in the electrode group G2 are electrically connected to the electrode regions E1, E2, E3 and the electrode pads in the electrode group G1. And is connected to the outside through the wiring 203.

The one surface of the electrode layer e1 of the semiconductor light-emitting device chip 21B ₃ fixed to the electrode region E1, the other surface of the electrode layer e2 while connected to the electrode region E2, E3 via a wire W, electrodes E1 and area E2 When a voltage higher than a light emission threshold between the (E3), the current flows in the thickness direction of the semiconductor light-emitting device chip 21B _3, as the end face of the XY plane, the light is emitted in the -Z direction from the end face. This light is applied to the near-field light generator 21A ₂₃ provided on the light exit surface 21A ₂₅ via the light incident surface 21A ₂₆ . A magnetic head portion without a near-field light generating part 21A ₂₃ may be employed but, in this example, and that it comprises a near-field light generating part 21A _23.

The near-field light generating part 21A ₂₃ is a plate-like member that is disposed substantially at the center of the light emitting surface 21A ₂₅ . In this example, it is assumed that the near-field light generating unit 21A ₂₃ has a triangular shape. The near-field light generating portion 21A ₂₃ is embedded in the light emitting surface 21A ₂₅ of the core so that the end surface is exposed to the medium facing surface S. Light from the semiconductor light emitting device chip 21B ₃ is the near-field light is generated by irradiating the near-field light generating part 21A _23. When irradiating light to the near-field light generating part 21A _23, electrons in the metal constituting the near-field light generating part 21A ₂₃ is plasma oscillation, electric field concentration occurs at the tip. Since the spread of the near-field light is about the radius of the tip of the plasmon probe, if the radius of the tip is set to be equal to or less than the track width, there is an effect that the emitted light is narrowed down to the diffraction limit or less .

The near-field light generating unit 21A ₂₃ first deposits a metal layer on the XZ plane of the insulating layer constituting the lower clad, and then extends to the Z-axis and has the base portion confined using a photolithography technique. A photoresist pattern is formed on the metal layer, and dry etching such as milling is performed using the photoresist pattern as a mask, thereby producing a metal line pattern extending along the Z axis on the XZ plane. Since the roots of the photoresist pattern are confined, the Y-axis negative direction tip of the metal line pattern becomes narrower in the X-axis direction by dry etching, and the cross-sectional shape in the XY plane of the metal line pattern becomes a triangle. . An insulating material to be a core is deposited thereon, and an insulating material to be a cladding is further deposited. Then, when the XZ plane is polished in the positive direction with respect to the Z axis, the thin near-triangle near-field light generating portion 21A ₂₃ Can be formed.

The writing area W1 due to the magnetic field generated around the main magnetic pole 21A ₂₂ is set in the vicinity of the near-field light irradiation area R. When the recording medium is moved in the positive direction of the Y axis, the area of the heated area R is increased. The writing area W1 is located at the position, and data is written. The region R and the region W1 may be set as overlapping regions. When reading data, the MR element 21A ₂₁ detects the magnetic field from the recording region R2. As the structure of the MR element 21A ₂₁ , a GMR element or a TMR element can be adopted. In these elements, hard magnets are located at both ends of the X axis of the free layer.

Figure 5 is a V-V in an arrow cross-sectional view of a semiconductor light-emitting device chip 21B ₃ shown in FIG. Note that description of each layer in the chip is omitted for clarification of the invention.

Figure 5 (a) - (d), the one surface F1 of the semiconductor light-emitting device chip 21B ₃ is fixed to the electrode region E1 of the supporting substrate. On the insulating layer 21B ₂ on the supporting substrate a plurality of electrode regions E1, E2, E3 are provided. Wire W is at both ends are respectively fixed to the electrode region E1, E2, E3, provided so as to straddle the upper other surface F2 of the semiconductor light-emitting device chip 21B _3, and is electrically connected to the other side F2.

Wire W is across on the other surface F2 of the semiconductor light-emitting device chip 21B _3, without being pressed by the so-called wire bonding method, since it is electrically connected to the other side F2 of the semiconductor light-emitting device chip 21B _3, damage to the semiconductor light emitting device chip 21B ₃ that is supplied is reduced, characteristic deterioration is suppressed. When a voltage is applied between the electrode region E2 and (E3) and one surface F1 of the semiconductor light-emitting device chip 21B _3, current flows between the one surface F1 and the other surface F2 of the semiconductor light-emitting device chip 21B _3, the semiconductor light emitting element chip 21B ₃ to emit light.

In FIG. 5 (a), the wire W is held electrical connection by direct contact with the other surface F2 of the semiconductor light-emitting device chip 21B _3. In order to reduce the contact resistance, a conductive connecting agent B for electrically connecting the wire W and the other surface F2 is further provided. Examples of the conductive connecting agent B include a conductive adhesive such as a conductive paste, solder, and the like.

In FIG. 5 (b), the wire W is in contact only at the corners of the semiconductor light-emitting device chip 21B _3. In FIG. 5 (c), the wire W is not at all contact with the semiconductor light-emitting device chip 21B _3. It is the conductive connecting agent B interposed between these that electrically connects the wire W and the other surface F2. In these embodiments, the wire W is not in contact with the wire W and the other side F2, since the wire W itself have little stress on the other surface F2, further suppress the deterioration of the semiconductor light-emitting device chip 21B ₃ can do.

In FIG. 5 (d), the semiconductor light-emitting device chip 21B ₃ is a other side F2, with adjacent to the other side F2, a pair of opposite sides SD1, SD2 which is located in the region where the wire W crosses when viewed from the other surface F2 side have. The other surface F2 and the side surfaces SD1, SD2 each form an obtuse angle θ. The side corners of the chip that intersect the direction (X direction) in which the wire W extends are chamfered, and the wire W straddles the other surface F2 without contacting the corner of the chip. In this case, the stress applied to the side surface can be reduced as compared with the case where the wire contacts the corner (FIG. 5B), and the wire W extends around the corner avoiding the corner (FIG. 5 ( The length of the wire W can be made shorter than c)). That is, the material cost can be reduced.

  As shown in FIG. 5D, even when chamfering is performed, as a method of bridging the wire W, when contacting the other surface F2, when contacting the corner, Needless to say, the case of no contact can be adopted.

Figure 6 is a perspective view of a semiconductor light-emitting device chip 21B ₃ provided with grooves GR on the other side.

The semiconductor light-emitting element a groove GR is formed on the other surface F2 of the chip 21B _3, the conductive connection material B is positioned within the groove GR. The conductive connecting agent B tends to be restrained in the groove GR, and positioning of the conductive connecting agent B becomes easy. When the liquid conductive connecting agent B is dropped, the conductive connecting agent B is sucked into the groove GR even if it is dropped at a position slightly deviated from the position of the groove GR. Comes to the groove GR.

  In the drawing, the wire W is along the groove GR and is located in the groove GR. However, the position of the wire W may not be along the groove GR but may be located above the groove GR. At least, when the wire W extends in the groove GR or above the groove GR, the conductive connecting agent B and the wire W tend to be reliably connected, and the connection reliability can be improved. . In this example, the depth of the groove GR is set smaller than the thickness of the upper electrode e1. As a method for installing the wire W, other forms in the present description can be applied.

Figure 7 is a plan view of a semiconductor light emitting device chip 21B ₃ for explaining a method of installing the wire W. This figure is a view of the semiconductor light-emitting device chip 21B ₃ from the other surface F2 side.

  In FIG. 7A, the number of the wires W is plural, the wires W intersect on the other surface F2, and the conductive connecting agent B is provided at the intersection XX. Wires W are provided between the electrode regions E2 and E3 and between the electrode regions E4 and E5. When the wires W are arranged so that the plurality of linear wires W have the intersections XX, the positions of the other surface F2 and the intersections XX tend to be fixed two-dimensionally.

  The wire W tends to have a smaller allowable movement amount in the extending direction than in the direction perpendicular to the extending direction. Therefore, by crossing the wires W, the relative movement amount of the intersection XX with respect to the other surface F2 at the time of thermal expansion or contraction can be regulated. Thereby, since peeling from the other surface F2 of the wire W or the conductive adhesive B decreases, the reliability of the light emitting element substrate is improved.

  FIG. 7B shows a case where there are a plurality of wires W, but the wires W do not intersect on the other surface F2.

  In FIG.7 (c), the number of the wires W is two or more, the shape of the other surface F2 is a polygon (quadrangle), and the wire W crosses the corner | angular part CN of the other surface F2. A conductive connecting agent B is fixed to each wire W. In this example, since the wire W tends to fix the position of the corner portion CN, it is possible to suppress the in-plane movement of the other surface F2 by constraining the positions of the plurality of corner portions CN with the wire W. Become.

  FIG. 7D shows that the number of wires W is plural, but the wires W do not intersect on the other surface F2. One electrode region E2 and a plurality of electrode regions E3, E4 are connected by wires W, and the conductive connecting agent B is dropped on each wire W.

  The conductive adhesive B is made of AuSn solder, and the weight% ratio of Au and Sn is preferably 40:60 to 60:40. In this case, the phase change temperature from the solid to the liquid of AuSn can be varied between 280 ° C. and 418 ° C. In the case of 50% by weight, 418 ° C. is obtained, and at the temperature before and after that, the phase change temperature gradually decreases within the above-mentioned ratio range. That is, the composition ratio is such that the semiconductor light-emitting element chip itself is not damaged when the solder is melted within the region of the composition ratio that does not melt due to heat generation of the semiconductor light-emitting element chip (composition ratio that gives the lower limit temperature when not melted). If it is set to (composition ratio giving an upper limit temperature at the time of melting), the reliability of the semiconductor light emitting element chip can be improved. Other ratios can be set.

The heat-assisted magnetic head 21 has the light-emitting element substrate 21B and the main magnetic pole 21A ₂₂ as a magnetic recording element, so that light from the semiconductor light-emitting element chip 21B ₃ is guided to the medium facing surface S. And a slider 21A to which the light emitting element substrate 21B is attached. According to the heat-assisted magnetic head 21, the light from the semiconductor light emitting device chip 21B ₃ is guided in the recording region (irradiation region) R of the magnetic recording medium through the slider 21A, the heating by the light, magnetism in the storage area The body's holding power temporarily decreases. At this time, if a magnetic field for writing is generated around the main magnetic pole 21A ₂₂ of the slider 21A, information corresponding to the magnetic field generated in the storage area can be written. That is, since writing can be performed even using a magnetic material having high holding power, the particle diameter of the magnetic fine particles can be reduced while ensuring thermal stability, so that the recording density can be increased. Since the relative position between the light emitting element substrate 21B and the slider 21A is to be fixed, it is possible to guide the recording area with high reliability light from the semiconductor light-emitting device chip 21B _3.

  The HGA 17 includes the above-described heat-assisted magnetic head 21 and a suspension 20 that supports the heat-assisted magnetic head 21. The HGA 17 has a high yield and reliability.

  The hard disk device 1 includes the above-described HGA 17 and a magnetic disk 10 as a magnetic recording medium facing the medium facing surface S. Since the hard disk device 1 includes the HGA 17, it can be manufactured with a high yield and operates with high reliability.

The electrode region E1 described above is formed as follows. First, on the insulating layer 21B ₂ (see FIG. 3) with which one surface F1 of the semiconductor light emitting element chip 21B ₃ is in contact, an Au electrode layer is formed in a thickness of 5 to 10 μm, Ti is 20 nm, and an AuSn solder layer is approximately 1 to 2 μm. Film. Further, a Cu layer is formed on the upper part thereof to a thickness of about 0.5 to 3 μm. Thereafter, these films, one surface F1 of the semiconductor light-emitting device chip 21B ₃ is patterned to the same extent of the area and to the contact.

Above electrode region E2, E3 is then on the insulating layer 21B _2, is 5~10μm about forming an Au electrode layer. Next, fused put the semiconductor light-emitting device chip 21B ₃ on the electrode E1. A wire W made of Au so as to straddle the bonded semiconductor light-emitting device chip 21B _3, bonded to the electrode E2, E3. Finally, as the bridge and the electrode surface of the semiconductor light emitting device chip 21B ₃ of the wire W are electrically connected to form a ball of electrically conductive connecting material B made of AuSn solder, fusing them.

In the case of mounting a semiconductor light-emitting device chip 21B ₃ of the above-described FIG. 5 (c), the Bondomisu without any, while also decreasing failure rate, the conventional wire bonding method has two approximately defective in 25 Occurred.

1 is a perspective view of a hard disk device according to an embodiment. It is a perspective view of HGA17. 2 is a perspective view of a heat-assisted magnetic head 21. FIG. It is a perspective view of semiconductor light emitting element chip | tip 21B3. Is V-V in an arrow cross-sectional view of a semiconductor light-emitting device chip 21B ₃ shown in FIG. Is a perspective view of a semiconductor light-emitting device chip 21B ₃ provided with grooves GR on the other side. Is a plan view of a semiconductor light-emitting device chip 21B ₃ for explaining a method of installing the wire W.

Explanation of symbols

21B ₁ ... Support substrate, 21B ₃ ... Semiconductor light emitting element chip, W... Wire, electrode regions E1, E2, E3, F2,.

Claims (10)

In the light emitting element substrate formed by fixing one surface of the semiconductor light emitting element chip to the support substrate,
A plurality of electrode regions provided on the support substrate;
Both ends are fixed to the electrode region, provided to straddle the other surface of the semiconductor light emitting element chip, and electrically connected to the other surface;
A light-emitting element substrate comprising:   The light emitting element substrate according to claim 1, further comprising a conductive connecting agent that electrically connects the wire and the other surface.   The light emitting element substrate according to claim 2, wherein the wire and the other surface are not in contact with each other.   The light emitting element substrate according to claim 2, wherein a groove is provided on the other surface of the semiconductor light emitting element chip, and the conductive connecting agent is located in the groove. The semiconductor light emitting device chip is:
The other side;
A pair of opposed side surfaces located adjacent to the other side and located in a region where the wire crosses as viewed from the other side;
Have
The light emitting device substrate according to claim 1, wherein the other surface and the side surface each form an obtuse angle.   The number of the said wires is plural, The said wire cross | intersects on the said other surface seeing from the said other surface side, The said electrically conductive connection agent is provided in this intersection. Light emitting element substrate.   The number of the wires is plural, the shape of the other surface is a polygon, and the wire crosses a corner of the other surface as viewed from the other surface side. Light emitting element substrate. The light emitting element substrate according to any one of claims 1 to 7,
A slider having a magnetic recording element and attached with the light emitting element substrate so that light from the semiconductor light emitting element chip is guided to the medium facing surface;
A heat-assisted magnetic head comprising: The thermally assisted magnetic head according to claim 8,
A suspension supporting the thermally-assisted magnetic head;
Head gimbal assembly with A head gimbal assembly according to claim 9;
The magnetic recording medium facing the medium facing surface;
Hard disk device with

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