JP2008246617A - Rotary tool for working soft material - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a rotary tool for working soft material capable of extending its use life by preventing falling of a hard film such as a diamond film etc. due to intrusion of a slurry liquid part and never making a scratch on a semiconductor wafer etc. worked and adjusted by a working material such as a pad etc. <P>SOLUTION: This rotary tool for soft material working to move the working material made of a soft material and work this working material is constituted so that a cutting blade protruded part 14 is formed to be projected on a surface 11A of a substrate 11 opposed to the working material, a gaseous phase synthetic diamond film 17 is formed on a point surface 15 of this cutting blade protruded part 14 and a surface of this gaseous phase synthetic diamond film 17 is hydrogen-termination-treated. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a rotary tool for processing / adjusting the surface of a soft material such as a pad made of porous resin, rubber, polyurethane rubber or the like, for example, a polishing pad for a semiconductor wafer.

  In recent years, with the progress of the semiconductor industry, there is an increasing need for processing methods for finishing metal, semiconductor, ceramics, and other surfaces with high precision. In particular, in the case of semiconductor wafers, the integration degree is improved and the nanometer (1/1000 μm). An order surface finish has been required. In order to cope with such high-precision surface finishing, CMP polishing (chemical mechanical polishing) using a porous pad (polishing cloth) is generally performed on a semiconductor wafer. CMP polishing is a combination of mechanical polishing using abrasive grains or the like and chemical polishing in which etching is performed with an alkali solution, an acid solution, or the like.

  A pad used for polishing a semiconductor wafer or the like is clogged or compressively deformed as the polishing time elapses, and its surface state gradually changes. As a result, undesired phenomena such as a decrease in polishing rate and non-uniform polishing occur. By periodically processing and adjusting the surface of the pad, the surface state of the pad is kept constant and a good polishing state is maintained. Ingenuity has been made.

  As an example of a rotating tool for processing a soft material used for processing and adjusting this pad, as disclosed in Patent Documents 1 and 2, a plurality of cutting edge protrusions protruding on the surface of the substrate are formed, The projecting end surface of the cutting edge convex portion is formed in a plane parallel or inclined with respect to the substrate surface, and the gas phase synthesis method such as microwave plasma CVD method or hot filament CVD method is applied to the entire substrate surface including the projecting end surface. The one in which a diamond film is formed is proposed.

Such a soft material processing rotary tool presses the surface of the substrate against the surface of the pad being rotated around the axis line with a constant load, so that the substrate moves with the rotational movement of the pad. The surface of the pad is processed and adjusted by a cutting blade convex portion press-fitted into the surface of the pad by performing a rotational motion. When processing the pad, slurry containing abrasive grains is supplied to the rotary tool for processing the soft material. Accordingly, the pad is mechanically polished by the abrasive grains, and the processing waste generated by the polishing is put on the flow of the slurry and discharged to the outside.
JP 2004-268241 A JP 2004-034266 A

By the way, when processing the pad, since the slurry is supplied to the surface of the soft material processing rotary tool as described above, the protruding end face of the cutting edge convex portion that is in contact with the pad or the surface of the substrate The surface of the diamond film formed in this way is always brought into contact with the slurry liquid.
Here, defects such as pinholes may occur on the surface of the diamond film formed by the vapor phase synthesis method. When the slurry liquid adheres to the surface of the diamond film, the slurry liquid may intrude into the protruding end surface of the convex part of the cutting edge or the interface between the substrate surface and the diamond film from the defective portion, and may cause the diamond film to drop off. there were.
The diamond film that has fallen off from the protruding surface of the cutting edge protrusion or the substrate surface enters the surface of the pad or moves on the surface of the pad so that when the semiconductor wafer is polished by this pad, the surface of the semiconductor wafer is scratched. There was a possibility of producing.

  The present invention has been made in view of the above-described circumstances, and prevents the falling of a hard film such as a diamond film due to intrusion of slurry liquid, and can extend the service life of the pad, etc. An object of the present invention is to provide a rotating tool for processing a soft material that does not cause a scratch on a semiconductor wafer or the like that is polished by the workpiece.

  In order to solve the above-described problems and achieve such an object, the present invention is a rotary tool for processing a soft material in which a workpiece made of a soft material is moved and the workpiece is processed. And a cutting edge convex portion is formed on the surface of the substrate opposed to the workpiece, and a gas phase synthetic diamond film is formed on a protruding end surface of the cutting blade convex portion. The surface of this gas phase synthetic diamond film is characterized by being hydrogen-terminated.

In the rotary tool for processing a soft material having this configuration, since a gas phase synthetic diamond film having a hydrogen termination treatment is formed on the protruding end face of the cutting edge convex portion, hydrogen atoms are present on the surface layer of the gas phase synthetic diamond film. Will be coordinated. Since the diamond film treated with hydrogen termination has hydrophobicity, it is possible to prevent the slurry liquid from adhering to the surface of the diamond film. Accordingly, it is possible to prevent the slurry liquid component from entering the interface between the diamond film and the tip end surface, thereby preventing the gas phase synthetic diamond film from falling off.
In addition, the vapor-phase synthetic diamond film does not peel off and enter the workpiece such as a pad or move on the surface, and may cause scratches on a semiconductor wafer or the like that is polished by the workpiece such as a pad. There is no.
Furthermore, since the gas phase synthetic diamond film is formed on the projecting end surface of the cutting edge convex portion that is press-fitted into the workpiece, the wear resistance of the cutting blade convex portion can be improved.

Here, the vapor phase synthetic diamond film may be formed over the entire surface of the substrate.
In this case, since the vapor-phase synthetic diamond film is formed over the entire surface of the substrate opposed to the workpiece, the wear resistance of the entire substrate surface is improved, and portions other than the cutting edge convex portion are the workpiece and Even when sliding, the wear of the substrate can be suppressed.

  Further, the rotary tool for processing a soft material of the present invention is a rotary tool for processing a soft material in which a workpiece made of a soft material is moved, and the workpiece is processed. The cutting blade projections are formed so as to protrude from the surface of the substrate opposed to each other, and a diamond-like carbon film is formed on the projecting end surface of the cutting blade projections. It is characterized by being terminated.

In the rotary tool for processing a soft material having this configuration, a diamond-like carbon film (hereinafter referred to as a DLC film) is formed on the protruding end face of the cutting edge convex portion instead of the vapor-phase synthetic diamond film. Also in the DLC film, it is possible to impart hydrophobicity to the surface by hydrogen termination treatment. Therefore, it is possible to prevent the slurry liquid component from adhering to the surface of the DLC film, and it is possible to prevent the DLC film from falling off due to the slurry liquid component entering the interface between the DLC film and the protruding end surface.
Further, the DLC film does not peel off and enter a workpiece such as a pad, and there is no possibility of causing a scratch on a semiconductor wafer or the like polished by the workpiece such as a pad.
Furthermore, by forming the DLC film on the projecting end face of the cutting blade convex portion, the wear resistance of the cutting blade convex portion can be improved.

The DLC film may be formed over the entire surface of the substrate.
In this case, the DLC film is formed over the entire surface of the substrate facing the workpiece, and the wear resistance of the entire substrate surface is improved.

In order to perform hydrogen termination treatment on these vapor-phase synthetic diamond film and DLC film, plasma treatment or the like is performed in a hydrogen stream after the vapor-phase synthetic diamond film or DLC film is formed.
Here, for example, surface analysis by X-ray photoelectron spectroscopy (hereinafter referred to as XPS) is effective in identifying a gas-phase synthetic diamond film or DLC film subjected to hydrogen termination. Usually, in the atmosphere, oxygen atoms are coordinated on the surface layer of a vapor-phase synthetic diamond film or a DLC film. However, when hydrogen termination is performed, hydrogen is coordinated instead of oxygen. Therefore, by analyzing the surface layer by XPS and detecting the oxygen peak, a hydrogen-terminated gas phase synthetic diamond film or A DLC film can be specified.

  According to the present invention, it is possible to prevent a hard film such as a diamond film from falling off due to the intrusion of slurry liquid, to extend its service life, and to a semiconductor wafer or the like that is polished by a workpiece such as a pad. It is possible to provide a rotary tool for processing a soft material that does not cause scratches.

Embodiments of the present invention will be described below with reference to the accompanying drawings. 1 to 3 show a rotary tool for processing a soft material according to this embodiment.
The substrate 11 of the rotary tool for soft material processing is made of SiC (silicon carbide), has a substantially disk shape rotated about the axis in the tool rotation direction T, and is parallel to each other, and Each has a surface 11A and a bottom surface 11B orthogonal to the axis. At least one pedestal portion 12 protruding upward is formed in the peripheral region on the radially outer side excluding the central region on the surface 11A of the substrate 11, and in this embodiment, as shown in FIG. The plurality of pedestal portions 12 projecting upward are arranged in a plurality of rows so as to be arranged at substantially equal intervals in the circumferential direction and in a staggered arrangement.

  Each of the plurality of pedestal portions 12 has a regular quadrangular prism shape having the same shape, and the upper surface of the substantially square surface is a pedestal surface 13, and the entire surface of the pedestal surface 13 is substantially parallel to the bottom surface 11 </ b> B of the substrate 11. It is a flat surface. The heights of the pedestal surfaces 13 of the plurality of pedestal portions 12 (height from the surface 11A of the substrate 11) are equal to each other.

  Each of the pedestal surfaces 13 (flat surfaces) of the plurality of pedestal portions 12 includes a substantially square intersection ridge line formed by intersecting the peripheral region (the pedestal surface 13 and the peripheral surface (side surface) of the pedestal portion 12). Of the peripheral region) at least on the front side in the tool rotation direction T (on the front side of the straight line extending from the axis of the substrate 11 having a substantially disc shape toward the radially outer side) and on the rear side (in the substantially disc shape). At least one cutting blade convex portion 14 that protrudes upward is formed in a region excluding the region on the rear side of the straight line extending from the axis of the substrate 11 toward the radially outer peripheral side.

In the present embodiment, in each pedestal surface 13 of the plurality of pedestal portions 12, not only in the tool rotation direction T front side and rear side in the peripheral area, but also in the radial direction (of the substrate 11) in the peripheral area. One cutting edge convex part 14 which protrudes upwards is formed in the central area excluding all peripheral areas including the peripheral and outer peripheral areas.
Since the plurality of cutting edge convex portions 14 also have the same regular square column shape as the pedestal portion 12, the pedestal surface 13 of the pedestal portion 12 having a substantially square cross section is actually A substantially square ring surface composed only of the peripheral region is formed.

  Thus, since one cutting blade convex part 14 protrudes upwards in the center area | region of the base surface 13 with respect to each of the pedestal part 12, these pedestal part 12 and cutting blade convex part are formed. 14 has a two-step projection shape in which a pedestal portion 12 having a substantially regular quadrangular prism shape having a large outer diameter and a cutting blade convex portion 14 having a substantially regular quadrangular prism shape having a small outer diameter are coaxially connected, On the surface 11A of the substrate 11, the same number of cutting blade protrusions 14 as the plurality of pedestal portions 12 are present.

As shown in FIG. 2, the protruding end surface 15 of the cutting edge convex portion 14 is an inclined surface inclined with respect to a plane parallel to the bottom surface 11 </ b> B of the substrate 11, and the inclined surface formed by the protruding end surface 15 and the substrate 11 are formed. The angle θ formed by the plane parallel to the bottom surface 11B is set to satisfy 5 ° ≦ θ ≦ 40 °.
Further, the four side surfaces of the cutting edge convex portion 14 extend substantially perpendicularly from the pedestal surface 13, and intersecting ridge lines between the four side surfaces and the protruding end surface 15 (inclined surface), that is, all the side ridge portions of the protruding end surface 15. A cutting edge ridge line portion 16 is formed on the surface.

  The cutting blade convex portion 14 is formed on the pedestal surface 13, and the heights of all the cutting blade convex portions 14 from the pedestal surface 13 are equal to each other, and the height of the pedestal surface 13 from the surface 11 </ b> A is Since they are equal to each other, the heights from the surface 11A of all the cutting edge convex portions 14 are also equal to each other. In the present embodiment, the pedestal surface 13 is set as a reference surface, and the height of the cutting blade convex portion 14 from the reference surface (the pedestal surface 13) is set within a range of 0.03 mm to 0.15 mm. Has been.

A gas phase synthetic diamond film 17 is coated on at least the projecting end face 15 of the cutting edge convex portion 14 formed integrally with the surface 11A of the substrate 11, and in this embodiment, the plurality of cutting edge convex portions 14 are formed. The entire surface 11A of the substrate 11 is coated with the vapor-phase synthetic diamond film 17, and the film thickness is 0.5 μm to 50 μm.
Such a gas phase synthetic diamond film 17 is obtained by, for example, applying a method using a microwave plasma or a hot filament to the substrate 11 having the plurality of pedestal portions 12 and the plurality of cutting edge convex portions 14 as described above. By using a known method such as a method to be used, it is formed over the entire surface 11 </ b> A of the substrate 11 including the plurality of pedestal portions 12 and the plurality of cutting edge convex portions 14.

  Then, hydrogen atoms are coordinated on the surface layer of the vapor phase synthetic diamond film 17 by performing hydrogen termination treatment. More specifically, after forming the vapor-phase synthetic diamond film 17, hydrogen atoms are coordinated to the surface layer of the vapor-phase synthetic diamond film 17 by performing plasma treatment or the like in a hydrogen stream.

  Next, the manufacturing method of this rotary tool for soft material processing is demonstrated using FIG. First, an SiC substrate 11 is formed (S1). The base portion 12 and the cutting edge convex portion 14 are formed in a predetermined pattern on the surface 11A of the base plate 11 (S2). The surface 11B of the substrate 11 after molding is washed (S3), and a surface treatment for nucleation is performed (S4). Thereafter, a gas phase synthetic diamond film 17 is formed by, for example, a hot filament method (S5). Then, hydrogen atoms are similarly coordinated to the surface layer of the vapor-phase synthetic diamond film 17 by hydrogen termination (S6) by the hot filament method. The hydrogen termination treatment is performed at a lower temperature than when the vapor-phase synthetic diamond film 17 is formed.

In the rotary tool for processing a soft material configured as described above, a plate material made of stainless steel, resin, or the like is attached to the bottom surface 11B of the substrate 11, or the substrate 11 is shrink-fitted into a recess formed in a plate material such as stainless steel. After being assembled, it will be used for actual processing.
The assembled rotary tool for processing a soft material is a porous resin, rubber, polyurethane rubber (having closed cells) or the like in which the surface 11A of the substrate 11 is rotated in the pad rotation direction. The substrate 11 is rotated in a direction perpendicular to the surface 11A and the bottom surface 11B in the tool rotation direction T with the rotational movement of the pad P by facing the surface of the pad P substantially parallel and pressing with a constant load. The surface of the pad P as a workpiece is processed by the cutting edge ridges 16 formed on the plurality of cutting edge protrusions 14 that rotate around the axis and are pressed into contact with the surface of the pad P. During this processing, a slurry containing abrasive grains is supplied to the surface 11A of the substrate 11.

  Actually, the gas phase synthetic diamond film 17 coating the cutting edge ridge line portion 16 processes the surface of the pad P. As described above, the processing waste generated when the pad P is processed by the vapor-phase synthetic diamond film 17 includes a gap located between the cutting edge projections 14 together with the slurry, a gap located between the pedestal portions 12, and the like. Discharged from.

In the rotary tool for soft material processing that is the present embodiment configured as described above, a gas phase synthetic diamond film 17 is formed on the protruding end surface 15 of the cutting edge convex portion 14 and the surface 11A of the substrate 11. Hydrophobicity is imparted to the gas phase synthetic diamond film 17 by hydrogen termination treatment. Therefore, it is possible to prevent the slurry liquid component from adhering to the surface of the gas phase synthetic diamond film 17 and to prevent the slurry liquid component from entering the interface between the gas phase synthetic diamond film 17 and the surface 11A of the substrate 11.
Further, since the vapor phase synthetic diamond film 17 is formed on the entire surface 11A of the substrate 11 opposed to the pad P, the wear resistance of the cutting edge convex portion 14 and the substrate 11 can be improved.

Therefore, the life of the rotary tool for soft material processing can be extended by suppressing the falling of the vapor-phase synthetic diamond film 17 and the wear of the cutting edge projections 14.
Further, since the vapor phase synthetic diamond film 17 is prevented from falling off, there is no possibility that the dropped diamond particles enter the pad surface and cause scratches on the semiconductor wafer or the like polished by the pad.

Next, a second embodiment of the present invention will be described. FIG. 5 shows a rotary tool for processing a soft material according to a second embodiment of the present invention. In addition, the same code | symbol is attached | subjected to the component same as 1st Embodiment, and description is abbreviate | omitted.
In the soft material processing rotary tool according to the second embodiment, a diamond-like carbon film 18 (hereinafter referred to as a DLC film 18) is formed on the surface 11A of the substrate 11 instead of the vapor-phase synthetic diamond film. .

  Then, hydrogen atoms are coordinated on the surface layer of the DLC film 18 by performing hydrogen termination treatment. More specifically, after the DLC film 18 is formed, plasma treatment or the like is performed in a hydrogen stream, thereby depositing hydrogen for one atom on the surface layer of the DLC film 18.

  The manufacturing method of this soft material processing rotary tool is demonstrated using FIG. First, a SiC substrate 11 is formed (S′1). The base portion 12 and the cutting edge convex portion 14 are formed in a predetermined pattern on the surface 11A of the base plate 11 (S'2). The surface 11B of the substrate 11 after molding is washed (S'3), and a surface treatment for nucleation is performed (S'4). Thereafter, a DLC film 18 is formed by, eg, plasma CVD (S′5). Then, hydrogen atoms are coordinated to the surface layer of the DLC film 18 by hydrogen termination treatment (S′6) by the plasma CVD method.

In the soft material processing rotary tool having the above-described configuration, the DLC film 18 is formed on the protruding end surface 15 of the cutting edge convex portion 14 and the surface 11A of the substrate 11, and the surface layer of the DLC film 18 is formed. Since the hydrophobicity is imparted to the surface of the DLC film 18 by the hydrogen termination treatment, the slurry liquid component is less likely to adhere to the surface of the DLC film 18 and the slurry liquid component penetrates into the interface between the DLC film 18 and the substrate 11 surface 11A. Can be prevented.
Further, since the DLC film 18 harder than SiC is formed on the entire surface 11A of the substrate 11 opposed to the pad P, the wear resistance of the cutting edge protrusion 14 and the substrate 11 can be improved.

Thereby, the lifetime of this rotary tool for soft material processing can be extended by suppressing the falling off of the DLC film 18 and the wear of the cutting edge projections 14.
Further, since the DLC film 18 is prevented from falling off, there is no possibility that the dropped hard particles enter the pad surface and cause a scratch on the semiconductor wafer or the like polished by the pad.

As mentioned above, although embodiment of this invention was described, this invention is not limited to this, It can change suitably in the range which does not deviate from the technical idea of the invention.
For example, in the present embodiment, the substrate on which the cutting edge convex portion and the pedestal portion are formed is described as being composed of SiC (silicon carbide). However, with respect to the material constituting the substrate, a vapor phase synthetic diamond film is used. In addition, it is preferable to set appropriately considering the ease of formation of the DLC film, the ease of forming the pedestal portion and the cutting edge convex portion, and the mechanical characteristics to withstand practical use.

In the present embodiment, the shape of the convex portion of the cutting edge is a substantially regular quadrangular prism shape, and the protruding end surface is inclined from one side of the quadrilateral toward the other side opposite to the one side. There is no limitation in particular in the shape of a blade convex part.
Further, it is preferable to appropriately set the number, arrangement, substrate diameter, etc. of the pedestal portion and the cutting blade convex portion in consideration of processing conditions and the like.

Below, the result of having verified the effectiveness of this invention by performing a comparative test using an example of this invention is shown.
As a test tool, a φ108 mm × 6 mm disk-shaped substrate made of a sintered body of silicon carbide (SiC) was prepared, and a plurality of cutting edge protrusions were formed on the surface of the substrate. A gas phase synthetic diamond film having a film thickness of 20 μm was formed on the substrate surface under the conditions of a filament temperature of 2000 ° C., a substrate temperature of 850 ° C., H ₂ : CH ₄ = 100: 2, and an H ₂ flow rate of 1000 ccm. .

After the vapor-phase synthetic diamond film was formed in this way, hydrogen termination treatment was performed using a hot filament method under conditions of a filament temperature of 1800 ° C., a substrate temperature of 750 ° C., and an H ₂ flow rate of 1000 ccm. In Example 1, the processing time was 3 minutes, in Example 2, the processing time was 10 minutes, and in Example 3, the processing time was 30 minutes. Moreover, as Comparative Example 1, a sample not subjected to hydrogen termination treatment was subjected to a comparative test.

  The pad was processed and adjusted by the rotating tool for soft material processing of Comparative Example 1 and Examples 1 to 3, and the wafer on which the oxide film was formed was polished by a CMP apparatus using this pad. At this time, a slurry for oxide film (KOH addition) containing silica particles was used as the slurry. The wafer rotation speed was 40 rpm, the pad rotation speed was 42 rpm, the wafer pressure was 35 kPa, the load was 2.7 to 4.0 kgf, and the slurry flow rate was 200 ml / min.

  Similarly, the pad was processed and adjusted by the rotating tool for soft material processing of Comparative Example 1 and Examples 1 to 3, and the wafer on which the tungsten film was formed was polished by a CMP apparatus using this pad. At this time, a slurry for metal film (pH 2-3, 3% hydrogen peroxide solution added) was used as the slurry.

  As an evaluation, polishing rate, polishing uniformity, substrate surface observation, and wafer surface observation were performed. Note that the polishing uniformity was evaluated by measuring the polishing amount at a plurality of locations on the wafer and by measuring the variation in the polishing amount. The evaluation results are shown in Table 1 and Table 2.

When the wafer on which the oxide film and the tungsten film were formed was polished, the polishing rate and the polishing uniformity were almost the same between Comparative Example 1 and Examples 1 to 3, and the influence of the hydrogen termination treatment was not recognized.
Differences were observed in the results of observation of the substrate surface and the wafer surface. More specifically, in Comparative Example 1, deposits were observed on the protruding end face of the cutting edge protrusion and the substrate surface, and the number of scratches on the wafer surface was large. Further, in Example 1, some deposits were observed on the protruding end surface of the convex part of the cutting edge, and slight scratches were observed on the wafer surface. In Examples 2 and 3, no deposits were observed on the substrate surface, and no scratches on the wafer surface were observed.
Thus, it was confirmed that by performing a hydrogen termination treatment on the gas phase synthetic diamond film, the generation of deposits such as diamond particles on the substrate surface can be suppressed, and the generation of scratches on the wafer surface can be suppressed.

Next, the DLC film was evaluated. As a test tool, a φ108 mm × 6 mm disk-shaped substrate made of a sintered body of silicon carbide (SiC) was prepared, and a plurality of cutting edge protrusions were formed on the surface of the substrate. On the substrate surface by using a plasma CVD method, synthesis pressure 2.5 Pa, CH ₄ flow rate 20 ccm, was formed a DLC film under the condition of DC voltage -1.8 kV.

After the DLC film was formed in this manner, hydrogen termination treatment was performed using a plasma CVD method under conditions of a chamber pressure of 3 Pa, an H ₂ flow rate of 10 ccm, and a DC voltage of −0.5 kV. In Example 4, the processing time was 3 minutes, in Example 5, the processing time was 10 minutes, and in Example 6, the processing time was 30 minutes. Further, as Comparative Example 2, a sample not subjected to hydrogen termination treatment was subjected to a comparative test.

  The pad was processed and adjusted by the rotating tool for soft material processing of Comparative Example 2 and Examples 4 to 6, and the wafer on which the oxide film was formed was polished by the CMP apparatus using this pad. At this time, a slurry for oxide film (KOH addition) containing silica particles was used as the slurry. The wafer rotation speed was 40 rpm, the pad rotation speed was 42 rpm, the wafer pressure was 35 kPa, the load was 2.7 to 4.0 kgf, and the slurry flow rate was 200 ml / min.

  Similarly, the pad was processed and adjusted by the rotating tool for soft material processing of Comparative Example 2 and Examples 4 to 6, and the wafer on which the tungsten film was formed was polished by a CMP apparatus using this pad. At this time, a slurry for metal film (pH 2-3, 3% hydrogen peroxide solution added) was used as the slurry.

  As an evaluation, polishing rate, polishing uniformity, substrate surface observation, and wafer surface observation were performed. Note that the polishing uniformity was evaluated by measuring the polishing amount at a plurality of locations on the wafer and by measuring the variation in the polishing amount. The evaluation results are shown in Table 3 and Table 4.

When the wafer on which the oxide film and the tungsten film were formed was polished, the polishing rate and the polishing uniformity were hardly different between Comparative Example 2 and Examples 4 to 6, and no influence by the hydrogen termination treatment was observed.
Differences were observed in the results of observation of the substrate surface and the wafer surface. More specifically, in Comparative Example 2, deposits were observed on the protruding end surface of the cutting edge protrusion and the substrate surface, and the number of scratches on the wafer surface was large. Further, in Example 4, some deposits were observed on the protruding end surface of the cutting edge convex portion, and slight scratches were observed on the wafer surface. In Examples 5 and 6, no deposits were observed on the substrate surface, and no scratches on the wafer surface were observed.
Thus, it was confirmed that by applying a hydrogen termination treatment to the DLC film, generation of deposits such as diamond particles on the substrate surface can be suppressed, and generation of scratches on the wafer surface can be suppressed.

It is a top view of the board | substrate with which the rotary tool for soft material processing which is the 1st Embodiment of this invention was equipped. It is ZZ sectional drawing in FIG. It is explanatory drawing of the state which is processing the pad with the rotary tool for soft material processing of FIG. It is a flowchart which shows the manufacturing process of the board | substrate shown in FIG. It is a fragmentary sectional view of the board | substrate with which the rotary tool for a soft material process which is the 2nd form of this invention was equipped. It is a flowchart which shows the manufacturing process of the board | substrate shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 Substrate 11A Surface 14 Cutting edge convex part 15 Projection end face 17 Gas phase synthetic diamond film 18 Diamond-like carbon film

Claims (4)

A workpiece made of a soft material is moved, and a rotary tool for processing a soft material that performs processing on the workpiece,
The cutting edge convex portion is formed so as to protrude on the surface of the substrate opposed to the workpiece,
A rotary tool for processing a soft material, characterized in that a gas phase synthetic diamond film is formed on the projecting end face of the cutting edge convex portion, and the surface of the gas phase synthetic diamond film is subjected to hydrogen termination treatment.   The rotary tool for soft material processing according to claim 1, wherein the vapor-phase synthetic diamond film is formed over the entire surface of the substrate. A workpiece made of a soft material is moved, and a rotary tool for processing a soft material that performs processing on the workpiece,
The cutting edge convex portion is formed so as to protrude on the surface of the substrate opposed to the workpiece,
A rotating tool for processing a soft material, characterized in that a diamond-like carbon film is formed on the projecting end surface of the convex part of the cutting edge, and the surface of the diamond-like carbon film is subjected to hydrogen termination treatment.   The rotary tool for soft material processing according to claim 3, wherein the diamond-like carbon film is formed over the entire surface of the substrate.

Images