JP2008244396A - Vapor phase growth device and substrate supporting member thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor phase growth device having a structure wherein a layer film of higher quality can be formed on an object substrate quickly. <P>SOLUTION: When high-frequency magnetic flux is generated by a coil member 160 to which AC power is applied, a substrate supporting member 110 composed of a conductive material generates heat by the induction of an eddy current, so that the layer film is formed by a raw material gas on the surface of the object substrate CB heated by the heat. Since a rotary shaft 120 pivotally supporting the substrate supporting member 110 penetrates through a central space of the coil member 160, the coil member 160 does not face the center of the substrate supporting member 110. Meanwhile, a part 121 connected to at least the substrate supporting member 110 of the rotary shaft 120 is formed of the conductive material, the part 121 also generates heat by the high frequency magnetic flux of the coil member 160. Thereby the center of the substrate supporting member 110 which does not face the coil member 160 also favorably generates heat, and the object substrate CB is uniformly heated to form the layer film homogeneously. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a vapor phase growth apparatus that forms a layer film on the surface of a target substrate by a vapor phase growth method, and in particular, a vapor phase growth apparatus that heats a substrate support member by induction of eddy current by high-frequency magnetic flux generated by a coil member. , The substrate support member.

  Currently, a layer film is sometimes formed on the surface of a target substrate by a vapor deposition method, and a vapor deposition apparatus is used for this. This vapor phase growth apparatus is, for example, a disk-shaped substrate support member that is formed of a conductive material and supports a target substrate, a rotation shaft that supports the substrate support member, and a substrate support member that rotates together with the rotation shaft. A substrate rotation mechanism to be driven, a gas supply mechanism for supplying a raw material gas to the surface of the target substrate supported by the substrate support member, and a high frequency induction for generating a predetermined high frequency magnetic flux and generating heat by induction of eddy currents A heating unit. The rotational axis of the coil member is inserted through a space secured at the center.

  In such a vapor phase growth apparatus, a target substrate on which a layer film is formed is supported by a substrate support member, the target substrate is rotationally driven together with the substrate support member, and a gas supply unit is attached to the surface of the rotationally driven target substrate. Source gas is supplied.

  At this time, by applying AC power to the coil member at a predetermined frequency, the coil member generates a predetermined high-frequency magnetic flux. Then, since the substrate support member made of a conductive material generates heat due to induction of eddy current, a layer film is formed from the raw material gas on the surface of the target substrate to be heated.

  In addition, although the coil member aims at generation | occurrence | production of a high frequency magnetic flux as mentioned above, since high voltage electric power is applied for this purpose, it produces heat. Therefore, in order to suppress this heat generation, the refrigerant is flowing inside the metal tube forming the coil member.

In the conventional vapor phase growth apparatus, for example, the substrate support member is rotated at a speed of several hundred rpm, and the surface of the substrate support member is heated to a temperature of about 1200 ° C. Currently, there are various proposals as a vapor phase growth apparatus having the above-described structure (for example, see Patent Documents 1 and 2).
JP-A-11-0922280 Japanese Patent Application Laid-Open No. 07-045530

  In the vapor phase growth apparatus as described above, the substrate support member made of a conductive material is heated to about 1200 ° C. by the high frequency magnetic flux generated by the coil member. Further, since the rotation shaft that supports the substrate support member is inserted into the central space of the coil member, the coil member faces the substrate support member that is rotatably supported.

  However, since the rotation shaft that pivotally supports the substrate support member is inserted through the central space of the coil member in this way, the coil member cannot be opposed to the center of the substrate support member. For this reason, the temperature of heat generation is reduced only in the vicinity of the center of the substrate support member.

  Therefore, it is difficult to uniformly heat the target substrate, and the quality of the layer film to be formed is deteriorated. This is particularly noticeable when a single large-diameter target substrate is disposed on the board surface of the substrate support member.

  The present invention has been made in view of the above-described problems, and uniformly heats a target substrate while having a structure in which a rotation shaft that pivotally supports a substrate support member is inserted into the central space of the coil member. The present invention provides a vapor phase growth apparatus having a structure capable of forming a layer film with good quality, and a substrate supporting member thereof.

  The vapor phase growth apparatus of the present invention is a vapor phase growth apparatus that forms a layer film on the surface of a target substrate by a vapor phase growth method, and is a disc-shaped substrate support member that is formed of a conductive material and supports the target substrate A rotation shaft that pivotally supports the substrate support member, a substrate rotation mechanism that rotates the substrate support member together with the rotation shaft, and a gas supply mechanism that supplies a source gas to the surface of the target substrate supported by the substrate support member And a high-frequency induction heating section that generates a predetermined high-frequency magnetic flux by the coil member and generates heat by induction of eddy current in the substrate support member, and the coil member is a disk-shaped spiral facing the disk surface of the substrate support member The rotating shaft is inserted into a space secured in the center, and at least a portion connected to the substrate support member is formed of a conductive material.

  In the vapor phase growth apparatus of the present invention, the target substrate on which the layer film is formed is supported by the substrate support member, the target substrate is rotationally driven together with the substrate support member, and the surface of the rotationally driven target substrate is supplied by the gas supply unit. Source gas is supplied. At this time, by applying AC power to the coil member at a predetermined frequency, the coil member generates a predetermined high-frequency magnetic flux. Then, since the substrate support member made of a conductive material generates heat due to induction of eddy current, a layer film is formed from the raw material gas on the surface of the target substrate to be heated. Since the rotating shaft that pivotally supports the substrate support member is inserted into the central space of the coil member, the coil member faces the substrate support member that is rotatably supported. However, since the rotating shaft that pivotally supports the substrate support member is inserted through the central space of the coil member in this way, the coil member cannot be opposed to the center of the substrate support member. However, since at least a portion of the rotating shaft connected to the substrate support member is formed of a conductive material, this portion also generates heat due to the high-frequency magnetic flux of the coil member. Since the heat generated in the portion of the rotating shaft is conducted to the central portion of the substrate support member, the central portion of the substrate support member that is not opposed to the coil member also generates heat well.

  The substrate support member of the present invention is a substrate support member of the vapor phase growth apparatus of the present invention, and is formed in a disk shape that is formed of a conductive material and supports the target substrate, and is inserted into the central space of the coil member. The rotating shaft is integrally formed of a conductive material.

  The various components of the present invention do not necessarily have to be independent of each other. A plurality of components are formed as a single member, and a single component is formed of a plurality of members. It may be that a certain component is a part of another component, a part of a certain component overlaps with a part of another component, or the like.

  In the vapor phase growth apparatus of the present invention, since the rotation shaft that supports the substrate support member is inserted into the central space of the coil member, the coil member cannot be opposed to the center of the substrate support member. However, since at least a portion of the rotating shaft connected to the substrate support member is formed of a conductive material, this portion also generates heat due to the high-frequency magnetic flux of the coil member. Since the heat generated in the portion of the rotating shaft is conducted to the central portion of the substrate support member, the central portion of the substrate support member that is not opposed to the coil member also generates heat well. For this reason, a target board | substrate can be heated uniformly and a layer film can be formed with favorable quality.

  An embodiment of the present invention will be described below with reference to FIGS. The vapor deposition apparatus 100 of the present embodiment is, for example, a CVD apparatus, and forms a layer film (not shown) on the surface of the target substrate CB by a vapor deposition method.

  Therefore, as shown in FIG. 1, the vapor phase growth apparatus 100 of the present embodiment includes a fixed susceptor 110 that is a disk-shaped substrate support member that is formed of a conductive material and supports the target substrate CB, and a fixed susceptor. The source gas is supplied to the surface of the target substrate CB supported by the fixed shaft 110, the rotation motor 120 that pivotally supports the rotation shaft 120, the drive motor 130 that is a substrate rotation mechanism that rotationally drives the fixed susceptor 110 together with the rotation shaft 120. And a high-frequency induction heating unit 150 that generates a predetermined high-frequency magnetic flux by the coil member 160 and heats the fixed susceptor 110 by induction of eddy current.

  However, as shown in FIG. 2, the high-frequency induction heating unit 150 includes a coil member 160 having a shape in which a metal tube 161 having a rectangular cross-sectional shape is wound in a disk-like spiral shape facing the surface of the fixed susceptor 110. The coil member 160 is formed in a disk-like spiral shape parallel to a plane orthogonal to the vertical direction, and the metal tube 161 is formed in a rectangular cross-sectional shape having a longer vertical width than a horizontal width.

  More specifically, the vapor phase growth apparatus 100 of the present embodiment also has a moving susceptor 111 that is a disk-shaped substrate holding member that directly holds the target substrate CB, and this moving susceptor 111 is attached to and detached from the fixed susceptor 110. Can be installed freely.

  The fixed susceptor 110 has a concave hole formed at a predetermined position on the upper surface, and the movable susceptor 111 has an engaging pin 112 that engages with the concave hole of the fixed susceptor 110 attached to the lower surface. For this reason, the fixed susceptor 110 indirectly holds the target substrate CB.

  The fixed susceptor 110 supports the target substrate CB on the upper surface formed of a board surface, and the gas supply mechanism 140 supplies the source gas from above to the surface of the target substrate CB supported by the fixed susceptor 110.

  The coil member 160 faces the fixed susceptor 110 from below, and a predetermined space is secured in the center. Therefore, the rotating shaft 120 pivotally supports the fixed susceptor 110 from below through the central space of the coil member 160.

  The rotating shaft 120 is formed of a conductive material from at least a portion connected to the fixed susceptor 110 to a portion inserted through the coil member 160, and a portion 121 formed of the conductive material of the rotating shaft 120. And the fixed susceptor 110 are integrally formed.

  The fixed susceptor 110 and the above-mentioned portion 121 of the rotating shaft 120 are made of, for example, graphite, and the surfaces thereof are coated with pyrolytic boron nitride. Similarly, the moving susceptor 111 is formed of, for example, graphite, and the surface thereof is coated with pyrolytic boron nitride.

  The vapor phase growth apparatus 100 according to the present embodiment has a cylindrical reactor main body 101, and a gas supply mechanism 140 is disposed on the reactor main body 101. In addition, a rotating shaft 120 is inserted through the center of the lower portion of the reactor main body 101 through a seal mechanism.

  An annular partition wall 102 is integrally fixed to the lower portion of the reactor main body 101, and a coil member 160 is disposed inside the partition wall 102. The coil member 160 is connected to a power application mechanism (not shown) that applies AC power at a predetermined frequency and a refrigerant flow mechanism 151 that causes cooling water to flow as a refrigerant therein.

  The coil member 160 and the fixed susceptor 110 are opposed to each other via a partition wall 102. The partition wall 102 is made of an insulating material that transmits high-frequency magnetic flux with minimum attenuation. Further, a heat shield plate 103 made of an insulating material is also provided on the upper surface of the partition wall 102 facing the fixed susceptor 110.

  In the vapor phase growth apparatus 100 of the present embodiment, the drive motor 130 rotationally drives the fixed susceptor 110 at a speed such as a maximum of 3000 rpm. The metal tube 161 forming the coil member 160 is made of, for example, an existing copper tube having a rectangular cross section with a vertical width of 15 mm, a horizontal width of 6 mm, and a plate thickness of 1 mm.

  The coil member 160 is formed by, for example, winding the above-described metal tube 161 in a five-fold manner into a disk-like spiral shape having an outer shape of 100 mm and an inner diameter of the central space of 18 mm. For example, an AC voltage having a maximum peak voltage of 250 V and a frequency of 35 kHz is applied to the coil member 160.

  Fixed susceptor 110 is formed of a conductive material, graphite, into a disk shape having a plate thickness of 7 mm and a diameter of 80 mm, and the surface thereof is coated with thermally decomposable boron nitride as an insulating material.

  Similarly, the moving susceptor 111 is also formed in a disk shape having a plate thickness of 7 mm and a diameter of 80 mm from graphite, which is a conductive material, and its surface is coated with thermally decomposable boron nitride, which is an insulating material.

  The portion 121 of the rotating shaft 120 formed of graphite integrally with the fixed susceptor 110 is formed with a diameter of 14 mm and a total length of 20 mm, for example. The distance between the upper surface of the coil member 160 and the lower surface of the fixed susceptor 110 is, for example, 10 mm.

  The fixed susceptor 110 heats the target substrate CB to 2000 ° C. at a rate of 100 deg / sec or more through the moving susceptor 111 by high frequency induction heating by the coil member 160. As shown in FIG. 3, the gas supply mechanism 140 is divided into a plurality of parts. For example, a group III or group VI source gas is injected downward together with a pressure gas.

  In the above-described configuration, in the vapor phase growth apparatus 100 of the present embodiment, the target substrate CB on which the layer film is to be formed is supported by the fixed susceptor 110 via the moving susceptor 111. The target substrate CB is rotationally driven by the drive motor 130 together with the fixed susceptor 110, and the source gas is supplied to the surface of the rotationally driven target substrate CB by the gas supply unit.

  At this time, when AC power is applied to the coil member 160 at a predetermined frequency, the coil member 160 generates a predetermined high-frequency magnetic flux. Then, the fixed susceptor 110 made of a conductive material generates heat due to induction of eddy current, so that a layer film is formed from the source gas on the surface of the target substrate CB to be heated.

  However, since the cross-sectional shape of the metal tube 161 forming the coil member 160 is rectangular, the surface area thereof is greatly increased compared to a conventional coil member made of a general metal tube having a circular cross-sectional shape. ing.

  Therefore, since the amount of current to be energized can be increased without increasing the surface potential of the coil member 160, the density of the high-frequency magnetic flux generated from the coil member 160 can be increased. For this reason, the fixed susceptor 110 can generate heat at a high temperature and at a high speed more safely than the conventional high-frequency magnetic flux, and a higher-quality layer film can be formed on the target substrate CB at a high speed.

  In particular, the metal tube 161 of the coil member 160 is formed in a rectangular cross-sectional shape whose longitudinal width is longer than its lateral width. For this reason, the surface area of the metal tube 161 is increased as compared with the area of the upper surface of the coil member 160 facing the fixed susceptor 110. Therefore, the fixed susceptor 110 can generate heat more favorably at a high temperature and at a high speed, and a higher-quality layer film can be formed on the target substrate CB at a high speed.

  Note that when the target substrate CB is heated to a high temperature as described above, there is a concern that the layer film formed by the generation of an upward airflow on the surface of the target substrate CB is not homogeneous. However, in the vapor phase growth apparatus 100 of the present embodiment, the target substrate CB is rotated together with the fixed susceptor 110 at a significantly higher speed than before, so that the above-mentioned rising airflow becomes plug flow due to centrifugal force. Therefore, the source gas is supplied relatively uniformly to the surface of the target substrate CB, and the layer film can be formed uniformly and at high speed.

  Further, the coil member 160 for generating the high-frequency magnetic flux does not need to generate heat, but self-heats when power is applied, so that it is cooled by flowing cooling water therein. As described above, the coil member 160 has an increased surface area and an increased flow area of the cooling water, so that the water cooling effect is also good.

  Nevertheless, since the coil member 160 is formed by winding an existing metal tube 161, the productivity is good. In particular, since the metal tube 161 has a vertically long cross-sectional shape, it can be easily bent in the horizontal direction. In addition, since the metal tube 161 is made of copper, it is possible to energize current with good efficiency.

  In the vapor phase growth apparatus 100 of the present embodiment, the fixed susceptor 110 generates heat by inducing eddy currents by the high-frequency magnetic flux generated by the coil member 160 as described above. However, a space is secured in the center of the coil member 160 so that the rotating shaft 120 can be inserted therethrough.

  For this reason, since the coil member 160 does not face the center of the fixed susceptor 110, there is a concern that the center of the fixed susceptor 110 does not generate heat well. However, in the vapor phase growth apparatus 100 of the present embodiment, the portion from the portion connected to the fixed susceptor 110 of the rotating shaft 120 to the portion inserted through the coil member 160 is formed of a conductive material.

  For this reason, the portion 121 formed of the conductive material of the rotating shaft 120 also generates heat by the high-frequency magnetic flux generated by the coil member 160, and the center of the fixed susceptor 110 generates heat well due to the heat conduction.

  In particular, the portion 121 formed of the conductive material of the rotating shaft 120 and the fixed susceptor 110 are integrally formed. For this reason, the heat generated in the portion 121 of the rotating shaft 120 is conducted to the center of the fixed susceptor 110 with good efficiency. Accordingly, the fixed susceptor 110 generates heat uniformly over substantially the entire upper surface.

  Therefore, the target substrate CB can be heated uniformly, and the layer film can be formed with good quality. Therefore, even when a single large-diameter target substrate CB is installed on the surface of the movable susceptor 111, the target substrate CB can be uniformly heated to form a layer film uniformly over the entire surface of the surface.

  Further, the target substrate CB is supported on the upper surface of the fixed susceptor 110 via the movable susceptor 111. For this reason, the heat generated by the fixed susceptor 110 is conducted to the target substrate CB via the movable susceptor 111.

  Since the non-uniformity of heat generation is also improved by this conduction, it is possible to heat the target substrate CB satisfactorily and uniformly. Further, since the target substrate CB is detachably attached to the fixed susceptor 110 through the movable susceptor 111 as described above, the target substrate CB can be easily replaced.

  The present invention is not limited to the present embodiment, and various modifications are allowed without departing from the scope of the present invention. For example, in the above embodiment, the fixed susceptor 110 supports the target substrate CB on the upper surface formed of a board surface, and the gas supply mechanism 140 supplies the source gas from above to the surface of the target substrate CB supported by the fixed susceptor 110, The coil member 160 is opposed to the fixed susceptor 110 from below, and the rotating shaft 120 is illustrated as supporting the fixed susceptor 110 from below via the central space of the coil member 160.

  However, as in the vapor phase growth apparatus 200 illustrated in FIG. 4, the fixed susceptor 110 supports the target substrate CB on the lower surface formed of a board surface, and the gas supply mechanism 140 includes the target substrate CB supported by the fixed susceptor 110. A raw material gas is supplied to the surface from below, the coil member 160 faces the fixed susceptor 110 from above, and the rotating shaft 120 pivotally supports the fixed susceptor 110 from above via the central space of the coil member 160. May be.

  In the vapor phase growth apparatus 200, since the moving susceptor 111 falls from the fixed susceptor 110 when engaged by the engaging pin 112 as described above, the moving susceptor 111 is moved by a bolt 201 or a chuck mechanism (not shown). The fixed susceptor 110 may be held.

  In such a vapor phase growth apparatus 200, the ease of replacement of the moving susceptor 111 is hindered. However, since the surface of the target substrate CB is positioned below, it is possible to effectively prevent foreign matter from adhering.

  In the above embodiment, the non-uniform heating of the target substrate CB is improved by detachably mounting the disk-shaped moving susceptor 111 on the surface of the disk-shaped fixed susceptor 110.

  However, by forming a recess having a predetermined shape on at least one of the surface of the movable susceptor 111 and the fixed susceptor 110 that are in contact with each other (not shown), the heat conduction is controlled by this recess, and the target substrate CB is better. The heating non-uniformity may be improved.

  Furthermore, in the above embodiment, the portion 121 of the rotating shaft 120 formed integrally with the fixed susceptor 110 with graphite as a conductive material is inserted completely into the central space of the coil member 160, so that the high frequency magnetic flux is good. Exemplified that it is heated.

  However, the portion 121 of the rotating shaft 120 formed of a conductive material integrally with the fixed susceptor 110 is induction-heated by the high-frequency magnetic flux of the coil member 160 so as to improve the non-uniformity of heat generation on the surface of the fixed susceptor 110. What is necessary is just to protrude to the position to be done.

  For this reason, the part of the rotating shaft that is formed of a conductive material integrally with the fixed susceptor is inserted partway through the central space of the coil member 160, or is inserted while being close to the central space of the coil member 160. It is also possible (not shown).

It is a typical longitudinal section front view showing the internal structure of the vapor phase growth apparatus of an embodiment of the invention. It is a typical disassembled perspective view which shows the assembly structure of the principal part of a vapor phase growth apparatus. It is a typical bottom view which shows the internal structure of a gas supply mechanism. It is a typical vertical front view which shows the internal structure of the vapor phase growth apparatus of one modification.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Vapor growth apparatus 101 Reactor body 102 Partition 103 Heat shield plate 110 Fixed susceptor 111 Moving susceptor 112 Engaging pin 120 Rotating shaft 121 Part 130 Drive motor 140 Gas supply mechanism 150 High frequency induction heating unit 151 Refrigerant flow mechanism 160 Coil member 161 Metal Tube 200 Vapor growth equipment 201 Volts

Claims (11)

A vapor phase growth apparatus for forming a layer film on the surface of a target substrate by a vapor phase growth method,
A disk-shaped substrate support member that is formed of a conductive material and supports the target substrate;
A rotating shaft pivotally supporting the substrate support member;
A substrate rotation mechanism that rotationally drives the substrate support member together with the rotation shaft;
A gas supply mechanism for supplying a source gas to the surface of the target substrate supported by the substrate support member;
A high frequency induction heating unit that generates a predetermined high frequency magnetic flux by a coil member and generates heat by induction of eddy current in the substrate support member,
The coil member is formed in a disk-like spiral facing the board surface of the substrate support member, and the rotation shaft is inserted through a space secured at the center,
The rotary shaft is a vapor phase growth apparatus in which at least a portion connected to the substrate support member is formed of a conductive material.   2. The vapor phase growth apparatus according to claim 1, wherein the rotating shaft is formed of a conductive material from at least a portion connected to the substrate support member to a portion inserted through the coil member.   The vapor phase growth apparatus according to claim 1 or 2, wherein a portion of the rotating shaft formed of a conductive material and the substrate support member are integrally formed.   4. The coil member according to claim 1, wherein the coil member is formed in a shape in which a metal tube having a rectangular cross-sectional shape is wound in a disk-like spiral shape facing the disk surface of the substrate support member. 5. Vapor growth equipment. The coil member is formed in a disk-shaped spiral parallel to a plane perpendicular to the vertical direction,
5. The vapor phase growth apparatus according to claim 4, wherein the metal tube is formed in a rectangular cross-sectional shape having a longer vertical width than a horizontal width. A disk-shaped substrate holding member that directly holds the target substrate and is detachably attached to the substrate support member;
6. The vapor phase growth apparatus according to claim 1, wherein a concave portion having a predetermined shape is formed on at least one of the board surfaces in contact with each other of the substrate holding member and the substrate support member. The substrate support member supports the target substrate on an upper surface formed of a board surface,
The gas supply mechanism supplies the source gas from above to the surface of the target substrate supported by the substrate support member,
The coil member faces the substrate support member from below,
The vapor phase growth apparatus according to any one of claims 1 to 6, wherein the rotation shaft pivotally supports the substrate support member from below through the space at the center of the coil member. The substrate support member supports the target substrate with a lower surface formed of a board surface,
The gas supply mechanism supplies the source gas from below to the surface of the target substrate supported by the substrate support member,
The coil member faces the substrate support member from above,
The vapor phase growth apparatus according to any one of claims 1 to 6, wherein the rotating shaft pivotally supports the substrate support member from above via the space at the center of the coil member. A substrate support member for a vapor phase growth apparatus according to claim 3,
It is formed of a conductive material and is formed in a disk shape that supports the target substrate,
The board | substrate support member by which the said rotating shaft inserted in the said space of the center of the said coil member is integrally formed with the said electrically-conductive material.   The substrate support member according to claim 9, wherein the surface is coated with an insulating material.   The substrate support member according to claim 10, wherein the conductive material is made of graphite, and the insulating material is made of pyrolytic boron nitride.

Images