JP2008244216A - Semiconductor laser and laser module equipped with same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser which has a higher mode suppressed and high reliability. <P>SOLUTION: The semiconductor laser 10 comprises a structure which has a buffer layer 2, a clad layer 3, a light confinement layer 4, an active layer 5, a light confinement layer 6, a clad layer 7, and a contact layer 8 laminated in order on a substrate 1 and is equipped with a window member 11 adjacently to the active layer 5. The window member 11 is made of a semiconductor material having an energy band gap larger than an energy band gap corresponding to the wavelength of laser light oscillated by the active layer 5, and has a curved surface 11A on the opposite side from a projection surface of the active layer 5. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor laser and a laser module including the same, and more particularly to a semiconductor laser capable of suppressing higher-order modes and a laser module including the same.

  A semiconductor laser used for a light source for optical communication and a pumping light source for an optical fiber amplifier is a ridge stripe laser or a buried hetero stripe laser. In order to perform a stable operation of the communication system, at least a semiconductor laser is required to perform a transverse mode single operation. To achieve this, the higher-order mode cut-off condition is satisfied, or the higher-order mode oscillation is suppressed by providing a gain difference for oscillation between the higher-order mode and the fundamental mode. In addition, the width of the active layer of the semiconductor laser is determined.

  In particular, pumping light sources for optical fiber amplifiers such as erbium-doped fiber amplifiers require higher power pumping light sources. Increasing the width of the active layer for higher power induces higher-order transverse modes. However, discontinuities (kinks) occur in the light-current characteristics. This kink makes the stable operation of the semiconductor laser difficult and becomes a factor limiting system performance such as gain of the optical fiber amplifier. Therefore, there is a problem that an active layer width larger than a certain value cannot be applied in order to increase the width of the active layer and realize high output.

On the other hand, in an AlGaAs / GaAs material semiconductor laser having a curved mirror using semiconductor dry etching, a semiconductor laser having a wide active layer width of about 100 μm and realizing a single transverse mode is known (non-patent document). References 1, 2).
ML Tilton et al. IEEE Journal of Quantum Electronics, vol. 27, No. 9, p. 2098, 1991. SA Biellak et al. IEEE Journal of Quantum Electronics, vol. 33, No.2, p.219, 1997.

  However, since the semiconductor lasers disclosed in Non-Patent Documents 1 and 2 contain aluminum (Al), an increase in non-radiative recombination components due to oxidation of Al and optical damage in the vicinity of the light emitting end face become problems. . In particular, after the curved mirror is formed by dry etching, the etching end face is in contact with the air, so the etching end face is more affected by surface oxidation compared to a normal cleavage mirror semiconductor laser, and reliability is improved. Is a problem.

  Accordingly, the present invention has been made to solve such a problem, and an object of the present invention is to provide a semiconductor laser that suppresses higher-order modes and has high reliability.

  Another object of the present invention is to provide a laser module including a highly reliable semiconductor laser that suppresses higher-order modes.

  According to this invention, the semiconductor laser includes an active layer and a window member. The active layer is formed on the substrate and emits laser light. The window member is disposed in contact with the emission surface of the active layer of the laser beam and is made of a semiconductor material having an energy gap larger than the energy gap corresponding to the wavelength of the laser beam, and is opposite to the side in contact with the emission surface. Has a curved surface.

  Preferably, the active layer and the window member are arranged in the in-plane direction of the substrate.

  Preferably, the curved surface is convex toward the active layer.

  Preferably, the surface of the active layer opposite to the emission surface is a flat surface.

  Preferably, the semiconductor laser further includes a low reflection film. The low reflection film is formed on a flat surface and has a reflectance lower than a reference value.

  Preferably, the semiconductor laser further includes a highly reflective film. The high reflection film is formed on a curved surface and has a reflectance higher than a reference value.

  According to the invention, a laser module includes the semiconductor laser according to any one of claims 1 to 6.

  In the semiconductor laser according to the present invention, the window member having a band gap larger than the band gap corresponding to the wavelength of the laser light oscillated in the active layer has a curved surface on the side opposite to the emission surface side of the active layer. As a result, the window member suppresses higher-order transverse modes of the laser light oscillated in the active layer. Even if the curved surface of the window member is oxidized, the effect of the oxidation on the characteristics of the semiconductor laser is small.

  Therefore, according to the present invention, it is possible to suppress higher-order transverse modes of the laser light and improve the reliability of the semiconductor laser.

  Embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals and description thereof will not be repeated.

  FIG. 1 is a perspective view of a semiconductor laser according to an embodiment of the present invention. A semiconductor laser 10 according to an embodiment of the present invention includes a substrate 1, a buffer layer 2, cladding layers 3 and 7, optical confinement layers 4 and 6, an active layer 5, a contact layer 8, and an insulating film 9. , A window member 11, a positive electrode 12, and a negative electrode 13.

The substrate 1 is made of, for example, n-type GaAs having a (100) plane orientation. The buffer layer 2 is formed on one main surface of the substrate 1 and is made of, for example, n-type GaAs. The buffer layer 2 has a film thickness of 0.3 μm and a carrier density of 1 × 10 ¹⁸ cm ⁻³ .

The clad layer 3 is formed on the buffer layer 2 and is made of, for example, n-type Al _0.35 Ga _0.65 As. The cladding layer 3 has a film thickness of 3 μm and a carrier density of 1 × 10 ¹⁷ cm ⁻³ .

The optical confinement layer 4 is formed on the cladding layer 3 and is made of, for example, non-doped Al _0.2 Ga _0.8 As. The light confinement layer 4 has a thickness of 50 nm. The active layer 5 is formed on the optical confinement layer 4 and has a strained quantum well structure. The strained quantum well structure has, for example, a double quantum well structure constituted by a well layer made of Ga _0.82 In _0.18 As and a barrier layer made of GaAs. The well layer has a thickness of 5 nm, for example, and the barrier layer has a thickness of 10 nm, for example.

The optical confinement layer 6 is formed on the active layer 5 and is made of, for example, non-doped Al _0.2 Ga _0.8 As. The light confinement layer 6 has a thickness of 50 nm. The clad layer 7 is formed on the optical confinement layer 6 and is made of, for example, p-type Al _0.35 Ga _0.65 As. The cladding layer 7 has a thickness of 2 μm and a carrier density of 1 × 10 ¹⁸ cm ⁻³ .

The contact layer 8 has a stripe shape and is formed on the cladding layer 7. The contact layer 8 is made of, for example, p ⁺ GaAs and has a film thickness of 0.5 μm and a carrier density of 2 × 10 ¹⁹ cm ⁻³ .

The insulating film 9 is disposed on both sides of the contact layer 8 and is formed on the cladding layer 7. The insulating film 9 is made of, for example, SiN _x . The window member 11 is formed in contact with a part of the cladding layer 3, the light confinement layers 4 and 6, the active layer 5, and a part of the cladding layer 7 in the in-plane direction DR 1 of the substrate 1. The window member 11 is made of, for example, a mixture of the cladding layer 3, the light confinement layer 4, the active layer 5, the light confinement layer 6 and the cladding layer 7 mixed with silicon (Si), and the semiconductor laser 10 Has an energy band gap larger than the energy band gap corresponding to the wavelength of the laser beam oscillating. The window member 11 has a curved surface 11 </ b> A on the side opposite to the side in contact with the active layer 5.

  The positive electrode 12 is formed on the contact layer 8 and the insulating film 9. The positive electrode 12 is made of, for example, Ti / Pt / Au. The negative electrode 13 is formed on the back surface of the substrate 1. The negative electrode 13 is made of, for example, Cr / Au.

  The semiconductor laser 10 has a length L and a width W. The length L is, for example, 1400 μm, and the width W is, for example, 7 μm or 50 μm. The width W of 7 μm or 50 μm is a width in which a higher-order transverse mode is induced when the window member 11 does not have the curved surface 11A.

FIG. 2 is a cross-sectional view of the semiconductor laser 10 taken along line II-II shown in FIG. The semiconductor laser 10 further includes an insulating film 14. The insulating film 14 is formed in contact with a part of the cladding layer 7, the contact layer 8 and the side surface of the positive electrode 12, and in contact with the upper surface of the window member 11. The insulating film 14 is made of, for example, SiN _x .

  FIG. 3 is a plan view of the semiconductor laser 10 viewed from the positive electrode 12 side shown in FIG. In FIG. 3, the insulating film 14 is omitted. The positive electrode 12 is formed on almost the entire surface of the contact layer 8 and the insulating film 9 except for the peripheral portion of the insulating film 9. The window member 11 is formed adjacent to the region where the positive electrode 12 is formed, and has an arcuate curved surface 11A on the side opposite to the region where the positive electrode 12 is formed.

  4 to 6 are first to third process diagrams showing manufacturing steps of the semiconductor laser 10 shown in FIG. 4 to 6 are cross-sectional views including the striped contact layer 8 shown in FIG.

When the production of the semiconductor laser 10 is started, the buffer layer 2, the cladding layer 3, the optical confinement layer 4, the active layer 5, and the optical confinement layer 6 are formed using metal organic chemical vapor deposition (MOCVD). Then, p ⁺ GaAs to be the cladding layer 7 and the contact layer 8 are sequentially formed on the substrate 1 (see FIG. 4A).

In this case, the n-type GaAs constituting the buffer layer 2 is formed using trimethylgallium (TMG), arsine (AsH ₃ ), and hydrogen selenide (H ₂ Se) as raw materials, and the n-type Al ₀ constituting the cladding layer 3. _.35 Ga _0.65 As is formed using trimethylaluminum (TMA), trimethylgallium (TMG), arsine (AsH ₃ ) and monosilane (SiH ₄ ) as raw materials.

The non-doped Al _0.2 Ga _0.8 As constituting the optical confinement layer 4 is formed using trimethylaluminum (TMA), trimethylgallium (TMG), and arsine (AsH ₃ ) as raw materials to constitute the active layer 5. Ga _0.82 In _0.18 As / GaAs is formed using trimethylgallium (TMG), trimethylindium (TMI) and arsine (AsH ₃ ) as raw materials.

Further, non-doped Al _0.2 Ga _0.8 As constituting the optical confinement layer 6 is formed using trimethylaluminum (TMA), trimethylgallium (TMG) and arsine (AsH ₃ ) as raw materials, and constitutes the cladding layer 7. P-type Al _0.35 Ga _0.65 As is formed using trimethylaluminum (TMA), trimethylgallium (TMG), arsine (AsH ₃ ) and carbon tetrabromide (CBr ₄ ) as raw materials.

Further, p ⁺ GaAs to be the contact layer 8 is formed using trimethyl gallium (TMG), arsine (AsH ₃ ), and carbon tetrabromide (CBr ₄ ) as raw materials.

When p ⁺ GaAs, which will be the buffer layer 2, the cladding layer 3, the optical confinement layer 4, the active layer 5, the optical confinement layer 6, the cladding layer 7, and the contact layer 8, is sequentially formed on the substrate 1, the contact layer 8 is obtained. A resist is applied on p ⁺ GaAs, and the applied resist is patterned in a stripe shape. Then, p ⁺ GaAs is etched using the patterned striped resist as a mask to form the contact layer 8.

  Thereafter, a resist is applied to the entire surface of the sample, and the applied resist is patterned to leave the resist only on a region where Si is not diffused. Then, a Si thin film serving as a Si diffusion source is formed on the entire surface of the sample by electron beam evaporation. In this case, the thickness of the Si thin film is, for example, 20 nm.

  After the formation of the Si thin film, the Si thin film on the resist pattern is removed (lift-off) by removing the resist pattern with acetone, and the Si thin film 20 is left only on a predetermined region (see FIG. 4B).

Thereafter, the SiO ₂ film 30 is formed on the entire surface of the sample by using a plasma CVD method (Chemical Vapor Deposition) (see FIG. 4C). Then, the entire sample is heat-treated at 850 ° C. for 8 hours in a nitrogen atmosphere. By this heat treatment, Si diffuses from the Si thin film 20 to the contact layer 8, the cladding layer 7, the optical confinement layer 6, the active layer 5, the optical confinement layer 4, and a part of the cladding layer 3. The light confinement layer 6, the active layer 5, the light confinement layer 4, and a part of the clad layer 3 are mixed to form a mixed crystal region 40 (see FIG. 4D).

  Here, the emission wavelength of the photoluminescence in the region where the Si thin film 20 is not formed is 980 nm, whereas the emission wavelength of the photoluminescence in the mixed crystal region 40 is about 930 nm. Therefore, it was confirmed that the mixed crystal region 40 has a large band gap due to Si diffusion.

The photoresist 50 was coated on the SiO ₂ film in the mixed region 40 other than the region, is removed by RIE (Reactive Ion Etching) using CF ₄ gas SiO ₂ film in the region not coated with the photoresist 50 (See (e) in FIG. 5).

  Thereafter, the Si thin film 20 and the mixed crystal region 40 corresponding to part of the contact layer 8 and the cladding layer 7 are etched by ICP-RIE (Inductively Coupled Plasma-RIE) using chlorine gas using the photoresist 50 as a mask. Then, the mixed crystal region 41 is formed (see FIG. 5F).

In this case, the etching conditions by ICP-RIE are that the flow rate of Cl ₂ is 6.2 sccm, the flow rate of Ar gas is 2.5 sccm, and the output of inductively coupled plasma (RF) is 130 W among the RF outputs. The bias output is 70 W, and the etching pressure is 0.6 Pa. The etching depth is about 2 μm.

Thereafter, the photoresist 50 is removed by RIE using oxygen gas, and the SiO ₂ film 30 is removed by RIE using CF ₄ gas. Then, a SiN _x film 60 is formed on the entire sample by a plasma CVD method or the like, and a photoresist is applied on the formed SiN _x film 60. Subsequently, the photoresist is patterned by photolithography, and a photoresist 70 having a curved surface 70A is formed on the SiN _x film 60 (see FIG. 5G).

Thereafter, the SiN _x film 60 is etched using the photoresist 70 as a mask to form a SiN _x film 61 having a curved surface 61A (see FIG. 5H). Then, the mixed crystal region 41 and a part of the substrate 1 are etched by ICP-RIE using chlorine gas using the SiN _x film 61 as a mask to form the window member 11 (see (i) of FIG. 6). In this case, in order to perform almost vertical etching (about 90 ° ± 3 °) with low processing damage, the etching conditions by ICP-RIE are such that the flow rate of Cl ₂ is 6.2 sccm and the flow rate of Ar gas is 2. The output of inductively coupled plasma is 130 W, the bias output is 70 W, and the etching pressure is 0.6 Pa. The etching depth is about 5 μm, and the curvature of the curved surface 11A is 1000 μm.

Subsequently, a photoresist 80 is applied to the entire surface of the sample, and the applied photoresist 80 is patterned by photolithography and etching to form a stripe-shaped opening 611 in the SiN _x film 61 ((j in FIG. 6). )reference).

  Then, Ti / Pt / Au is vapor-deposited on the entire surface of the sample by an electron beam vapor deposition method, and Ti / Pt / Au deposited on unnecessary portions is removed by removing the photoresist 80. As a result, the positive electrode 12 is formed, and the insulating films 9 and 14 are formed on both sides of the contact layer 8 (see (k) in FIG. 6).

  Thereafter, the back surface of the substrate 1 is polished so that the thickness becomes about 150 μm, and Cr / Au is deposited on the back surface of the substrate 1 by an electron beam evaporation method to form the negative electrode 13 (see (l) in FIG. 6). ). Thereby, the semiconductor laser 10 is completed.

  When a predetermined voltage is applied between the positive electrode 12 and the negative electrode 13 of the semiconductor laser 10 and a current exceeding the threshold is injected into the active layer 5, the semiconductor laser 10 oscillates a laser beam of 980 nm. The semiconductor laser 10 emits laser light from the emission surface 5A (see FIG. 2) to the window member 11, and also emits laser light from the opposite emission surface 5B.

  The active layer width W of the semiconductor laser 10 is 7 μm or 50 μm. If there is no curved surface 11A, a high-order transverse mode is induced. Since the window member 11 has the curved surface 11A, the gain difference between the fundamental mode and the higher-order mode is increased, so that the higher-order transverse mode is suppressed, and a part of the laser light composed of the single transverse mode is transferred to the active layer 5. To the outside of the device. In this case, since the window member 11 has a larger band gap than the adjacent cladding layer 3, light confinement layer 4, active layer 5, light confinement layer 6, and cladding layer 7, light of 980 nm is not absorbed.

  The laser light emitted from the window member 11 into the active layer 5 is further amplified by stimulated emission and emitted from the end face 5B (see FIG. 2) to the outside.

  Moreover, since the semiconductor laser 10 includes the curved surface 11A on the side opposite to the emission surface 5A of the active layer 5, even if the surface of the curved surface 11A is oxidized, the influence of the surface oxidation is reduced. Therefore, the reliability of the semiconductor laser 10 can be improved.

  FIG. 7 is another perspective view of the semiconductor laser according to the embodiment of the present invention. 8 is a plan view of the semiconductor laser 10A viewed from the positive electrode 12 side shown in FIG.

  The semiconductor laser according to the embodiment of the present invention may be a semiconductor laser 10A shown in FIGS. The semiconductor laser 10A is the same as the semiconductor laser 10 except that a multilayer reflective film 15 and a low reflective film 16 are added to the semiconductor laser 10 shown in FIG.

  The multilayer reflective film 15 is formed by a plasma CVD method in contact with the curved surface 11A of the window member 11. The multilayer reflective film 15 has, for example, a 99% reflectance with respect to light having a wavelength of 980 nm, is emitted from the active layer 5 into the window member 11, and propagates through the window member 11. To reflect.

The low reflection film 16 is formed on the end surface of the buffer layer 2, the cladding layer 3, the light confinement layer 4, the active layer 5, the light confinement layer 6, the cladding layer 7, the contact layer 8, and the insulating film 9 on the side opposite to the window member 11 side. It is formed by sputtering. The low reflection film 16 is made of, for example, Al ₂ O ₃ and has a film thickness that is a quarter of the wavelength of the laser light oscillated in the active layer 5. As a result, the low reflection film 16 has a reflectance of 2%.

FIG. 9 is a cross-sectional view of the multilayer reflective film 15 shown in FIGS. The multilayer reflective film 15 includes SiO ₂ films 151, 153, 155 and amorphous Si films 152, 154, 156, 158. The SiO ₂ films 151, 153, 155 and the amorphous Si films 152, 154, 156, 158 are alternately stacked in the in-plane direction of the substrate 1, that is, in the direction perpendicular to the curved surface 11A. Then, the SiO ₂ films 151, 153, 155 and the amorphous Si films 152, 154, 156, 158 are laminated, for example, seven layers. In addition, each of the SiO ₂ films 151, 153, 155 and the amorphous Si films 152, 154, 156, 158 has a film thickness that is a quarter of the wavelength of the laser light oscillated in the active layer 5.

  In the semiconductor laser 10A, 980 nm laser light oscillated in the active layer 5 is radiated into the window member 11 from the emission surface 5A. The laser light propagates through the window member 11 without being absorbed, and single transverse mode light in which higher order transverse modes are suppressed is reflected by the curved surface 11A on which the multilayer reflective film 15 is formed.

  The laser beam of the single transverse mode reflected by the curved surface 11A is emitted from the window member 11 into the active layer 5, and further amplified by stimulated emission in the active layer 5, and is transmitted to the outside through the end face 5B and the low reflection film 16. Radiated.

  In the semiconductor laser 10A, the multilayer reflective film 15 can achieve a high reflectance over a wide wavelength range, and therefore, when the multilayer reflective film 15 is formed in contact with the curved surface 11A, the variation in characteristics can be suppressed in terms of manufacturing the device. it can.

  FIG. 10 is still another perspective view of the semiconductor laser according to the embodiment of the present invention. FIG. 11 is a plan view of the semiconductor laser 10B viewed from the positive electrode 12 side shown in FIG.

  The semiconductor laser according to the embodiment of the present invention may be a semiconductor laser 10B shown in FIGS. The semiconductor laser 10 </ b> B is obtained by adding a window member 17 to the semiconductor laser 10 shown in FIG. 1 and is otherwise the same as the semiconductor laser 10.

  The window member 17 is formed on the side opposite to the window member 11 in contact with a part of the cladding layer 3, the light confinement layer 4, the active layer 5, the light confinement layer 6, and a part of the cladding layer 7. And the window member 17 is the same as the window member 11 from the mixed crystal material which mixed-crystallized the semiconductor material which comprises the clad layer 3, the optical waveguide 4, the active layer 5, the optical waveguide 6, and the clad layer 7 with Si. Become. Therefore, the window member 17 has an energy band gap larger than the energy band gap corresponding to the wavelength of the laser beam oscillated by the semiconductor laser 10B, and absorbs almost no laser beam emitted from the active layer 5 and end face 17A. Radiates from the outside.

  The semiconductor laser 10 </ b> B is manufactured by manufacturing the window member 17 simultaneously with the window member 11 in the manufacturing process of the semiconductor laser 10.

  In the semiconductor laser 10B, since the window members 11 and 17 are provided on both sides of the active layer 5, the surface oxidized surface is far from the active layer 5 and suppresses element deterioration due to optical damage (COD) of the end surface. it can. Therefore, the reliability of the semiconductor laser 10B can be made higher than that of the semiconductor laser 10.

  The semiconductor laser 10B may further include a multilayer reflective film 15 and a low reflective film 16 shown in FIG. In this case, the low reflection film 16 is formed so as to be in contact with the end surface 17 </ b> A of the window member 17.

  FIG. 12 is still another perspective view of the semiconductor laser according to the embodiment of the present invention. FIG. 13 is a plan view of the semiconductor laser 10C viewed from the positive electrode 12 side shown in FIG.

  The semiconductor laser according to the embodiment of the present invention may be a semiconductor laser 10C shown in FIGS. The semiconductor laser 10 </ b> C is obtained by adding a window member 18 to the semiconductor laser 10 shown in FIG. 1, and is otherwise the same as the semiconductor laser 10.

  The window member 18 is formed on the opposite side of the window member 11 in contact with a part of the cladding layer 3, the light confinement layer 4, the active layer 5, the light confinement layer 6, and a part of the cladding layer 7. The window member 18 has a curved surface 18A having the same curvature as the curved surface 11A of the window member 11 on the side opposite to the cladding layer 3, the light confinement layer 4, the active layer 5, the light confinement layer 6, and the cladding layer 7 side. Similarly to the window member 11, the window member 18 is made of a mixed crystal material obtained by mixing a semiconductor material constituting the cladding layer 3, the optical waveguide 4, the active layer 5, the optical waveguide 6 and the cladding layer 7 with Si. Become. Therefore, the window member 18 has an energy band gap larger than the energy band gap corresponding to the wavelength of the laser beam oscillated by the semiconductor laser 10C, and hardly absorbs the laser beam emitted from the active layer 5 and has a curved surface 18A. Radiates from the outside.

  The semiconductor laser 10 </ b> C is manufactured by manufacturing the window member 18 simultaneously with the window member 11 in the manufacturing process of the semiconductor laser 10.

  In the semiconductor laser 10C, since the window members 11 and 18 are provided on both sides of the active layer 5, higher-order transverse modes of the laser light oscillated in the active layer 5 can be further suppressed. In the semiconductor laser 10 </ b> C, the surface to be oxidized is far from the active layer 5. Therefore, the reliability of the semiconductor laser 10C can be made higher than that of the semiconductor laser 10.

  The semiconductor laser 10C may further include a multilayer reflective film 15 and a low reflective film 16 shown in FIG. In this case, the low reflection film 16 is formed so as to be in contact with the curved surface 18 </ b> A of the window member 18.

  FIG. 14 is a plan view of a butterfly module including the semiconductor laser 10 shown in FIG. The butterfly module 200 includes a semiconductor laser 210, a photodiode 220, a carrier 230, an optical fiber 240, a lens 250, a butterfly package 260, a base 270, and external terminals 280A and 280B.

  The semiconductor laser 210, the photodiode 220, the carrier 230, the lens 250 and the base 270 are arranged in the butterfly package 260. The base 270 is disposed on the bottom surface of the butterfly package 260. The carrier 230 and the lens 250 are disposed on the base 270.

  The semiconductor laser 210 includes the semiconductor laser 10 shown in FIG. 1 and is disposed on the carrier 230 so that the end face 5B faces the lens 250. The photodiode 220 is disposed on the carrier 230 so as to face the curved surface 11A of the semiconductor laser 210.

  One end side of the optical fiber 240 is disposed in the butterfly package 260, and one end thereof is fixed at a position where the laser light from the lens 250 can enter. The lens 250 is disposed so that the laser light emitted from the semiconductor laser 210 enters the optical fiber 240.

  External terminals 280 </ b> A and 280 </ b> B are fixed to the side walls so that one end thereof is inserted into butterfly package 260.

  Carrier 230 is connected to external terminals 280A and 280B by wires 231 and 232, respectively. The semiconductor laser 210 is connected to the carrier 230 by a wire 211. Thus, the semiconductor laser 210 is connected to the external terminal 280B by the carrier 230 and the wires 211 and 232. The photodiode 220 is connected to the carrier 230 by a wire 221. As a result, the photodiode 220 is connected to the external terminal 280 </ b> A by the carrier 230 and the wires 221 and 231.

  When a current equal to or higher than the oscillation threshold of the semiconductor laser 210 is injected into the semiconductor laser 210 via the external terminal 280A, the semiconductor laser 210 oscillates a single transverse mode laser beam while suppressing higher-order transverse modes, The oscillated single transverse mode laser light is emitted from the end face 5B to the lens 250, and a part of the single transverse mode laser light is emitted from the curved surface 11A to the photodiode 220.

  The photodiode 220 receives a part of the single transverse mode laser light emitted from the curved surface 11A of the semiconductor laser 210, converts a part of the received laser light into an electric signal, and converts the converted electric light. The signal is output to the outside via the external terminal 280A.

  The lens 250 receives single transverse mode laser light emitted from the end face 5B of the semiconductor laser 210, condenses the received laser light, and enters the one end of the optical fiber 240. The optical fiber 240 propagates the laser light incident from the lens 250.

  As described above, the semiconductor laser 210 includes the semiconductor laser 10 that can increase the output of the laser light and has high reliability. Therefore, the single transverse mode laser light emitted from the butterfly module 200 is used. , And the reliability of the butterfly module 200 can be improved.

  The semiconductor laser 210 of the butterfly module 200 may be composed of any one of the semiconductor lasers 10A, 10B, and 10C instead of the semiconductor laser 10.

  FIG. 15 is a cross-sectional view of a CAN module including the semiconductor laser 10 shown in FIG. The CAN module 300 includes a support base 310, fixing members 320, 330, and 340, a CAN package 350, a semiconductor laser 360, a lens 370, and an optical fiber 380.

  The fixing member 320 fixes the CAN package 350 to the support base 310. The fixing member 330 fixes the lens 370 to the support base 310. The fixing member 340 fixes the optical fiber 380 to the support base 310.

  The CAN package 350 accommodates the semiconductor laser 360. The CAN package 350 has a window 351. The semiconductor laser 360 includes the semiconductor laser 10 shown in FIG. 1 and is fixed in the CAN package 350 so that the end surface 5B faces the window 351 of the CAN package 350.

  The lens 370 is disposed at a position where the laser light emitted from the semiconductor laser 360 can be incident through the window 351. The optical fiber 380 is disposed at a position where the laser beam condensed by the lens 370 can be incident.

  When a current greater than the oscillation threshold of the semiconductor laser 360 is injected into the semiconductor laser 360, the semiconductor laser 360 oscillates a single transverse mode laser beam while suppressing higher-order transverse modes, and the oscillated single transverse mode is oscillated. The mode laser beam is emitted from the end surface 5B to the lens 370 through the window 351.

  The lens 370 receives a single transverse mode laser beam emitted from the end face 5B of the semiconductor laser 360, condenses the received laser beam, and enters the one end of the optical fiber 380. The optical fiber 380 propagates the laser light incident from the lens 370.

  As described above, the semiconductor laser 360 includes the semiconductor laser 10 that can increase the output of the laser beam and has high reliability. Therefore, the laser beam of the single transverse mode emitted from the CAN module 300 can be obtained. The output can be increased and the reliability of the CAN module 300 can be improved.

  In the present invention, a CAN module 300 is manufactured by bonding a semiconductor laser 360 to a 9 mmφ CAN via a heat sink. In this case, the width of the semiconductor laser 360 is 7 μm or 50 μm.

  As a result of measuring the threshold currents of two types of semiconductor lasers 360 (= semiconductor laser 10) having a width of 7 μm and 50 μm during room temperature pulse operation, they were 60 mA and 490 mA, respectively.

  Further, in order to confirm the single transverse mode oscillation of the semiconductor laser 360 (= semiconductor laser 10), a far-field image of the emitted beam was observed. As a comparative example, a far-field image of the outgoing beam of a Fabry-Perot type semiconductor laser whose both end surfaces are cleaved mirrors was observed.

  As a result, in the semiconductor laser 360 (= semiconductor laser 10), the far-field pattern has a full width at half maximum of 6.7 °, which is a unimodal pattern (a pattern with one peak), whereas a high-order horizontal In the comparative example in which the mode is induced, the full width at half maximum of the far-field image is 5.5 °, and unimodality could not be confirmed.

  On the other hand, regarding the semiconductor laser 360 (= semiconductor laser 10), when the output of the laser beam is 5 mW, the far-field image shows a unimodal pattern, and the single transverse mode is controlled. It could be confirmed. In this case, the full width at half maximum of the far-field image of the semiconductor laser 360 (= semiconductor laser 10) having a width of 7 μm and the semiconductor laser 360 (= semiconductor laser 10) having a width of 50 μm was 9 ° and 6.4 °, respectively. It was.

  The semiconductor laser 360 of the CAN module 300 may be configured by any one of the semiconductor lasers 10A, 10B, and 10C instead of the semiconductor laser 10.

  The CAN module 300 may include a light receiving element for monitoring laser light emitted from the semiconductor laser 360 on the curved surface 11A side of the semiconductor laser 360.

  In the above description, the curved surfaces 11A and 18A have been described as having a shape that is convex toward the active layer 5. However, in the present invention, the curved surfaces 11A and 18A are not limited to this, and the curved surfaces 11A and 18A are concave toward the active layer 5. The shape which becomes may be sufficient. In the semiconductor laser 10C, the curved surfaces 11A and 18A may have different shapes.

  In the above description, the multilayer reflective film 15 is described as having a reflectance of 90% at 980 nm. However, in the present invention, the multilayer reflective film 15 is not limited to this, and the multilayer reflective film 15 has a reflectance equal to or higher than a reference value. The reflectivity is optimized according to the requirements of the system used. The multilayer reflective film 15 constitutes a “high reflective film”.

  Further, in the above description, the low reflection film 16 has been described as having a reflectance of 2%. However, the present invention is not limited to this, and the low reflection film 16 conforms to the required specifications in the same manner as the high reflection film. Optimized.

  Furthermore, in the above description, the semiconductor lasers 10, 10A, 10B, and 10C have been described as being made of an AlGaAs / GaInAs-based semiconductor material formed on a substrate made of GaAs. However, the present invention is not limited to this. The lasers 10, 10A, 10B, and 10C are formed using (Al) GaInAsP or GaInAs formed on a substrate made of InP, AlGaInP or AlGaAs or GaInNAs or GaInNAsSb or AlGaInN formed on a substrate made of GaAs. Also good.

  Further, in the above description, the semiconductor material constituting the semiconductor lasers 10, 10A, 10B, and 10C has been described as being formed using the MOCVD method. However, the present invention is not limited to this, and the semiconductor lasers 10 and 10A are not limited thereto. , 10B, and 10C may be formed by using molecular beam epitaxy (MBE) or actinic beam epitaxy of a gas source or a solid source.

  Further, in the above description, the window members 11, 17, and 18 have been described as being formed by diffusing Si to produce a mixed crystal region. However, in the present invention, the window member 11 is not limited thereto. , 17 and 18 may be formed by ion-implanting Si to produce a mixed crystal region.

Furthermore, the window members 11, 17, and 18 may be formed by bad joint crystal growth. This bad joint crystal growth method includes the following methods. Buffer layer 2, cladding layer 3, the light confinement layer 4, active layer 5, the light confinement layer 6, after the p ⁺ GaAs as a cladding layer 7 and contact layer 8 are successively grown on the substrate 1, the entire surface of the sample insulator The insulating film formed in the vicinity of the region where the emission surface 5A of the semiconductor lasers 10, 10A, 10B, and 10C is formed is removed.

Then, an exposed semiconductor layer (= p ⁺ GaAs which becomes the buffer layer 2, the clad layer 3, the optical confinement layer 4, the active layer 5, the optical confinement layer 6, the clad layer 7 and the contact layer 8) by wet etching or dry etching. Is etched to the extent that it reaches the substrate 1.

  Thereafter, a semiconductor material having an energy band gap larger than the energy band gap corresponding to the oscillation wavelength is regrown in the etched region using MOCVD or the like. As a result, the window members 11, 17 and 18 are formed adjacent to the active layer 5.

  The semiconductor material having an energy band gap larger than the energy band gap corresponding to the oscillation wavelength is, for example, InP or GaInAsP in a GaInAsP / InP long-wavelength semiconductor laser.

  The regrowth region may be a waveguide layer having a multilayer structure including a clad layer and a core layer.

  Furthermore, since the refractive index is different between the regrowth region and the laser oscillation region, reflection at the interface may occur. Therefore, in order to suppress this, the interface is preferably inclined with respect to the axial direction of the semiconductor lasers 10, 10A, 10B, 10C.

  Furthermore, in the case of an AlGaAs / GaInAs semiconductor laser containing Al, there is a concern that the surface of the semiconductor is oxidized due to the oxidation of Al, making epitaxial growth difficult. Situ etching is performed and regrowth is performed under a low oxygen concentration condition. In this case, GaAs or GaInP is regrown.

  Further, in the above description, the semiconductor lasers 10, 10A, 10B, and 10C have been described as being manufactured using a semiconductor material that has been crystal-grown on an n-type substrate. The lasers 10, 10A, 10B, and 10C may be manufactured using a semiconductor material crystal-grown on a p-type substrate.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiment but by the scope of claims for patent, and is intended to include all modifications within the meaning and scope equivalent to the scope of claims for patent.

  The present invention is applied to a semiconductor laser that suppresses higher-order modes and has high reliability. In addition, the present invention is applied to a laser module including a highly reliable semiconductor laser that suppresses higher-order modes.

1 is a perspective view of a semiconductor laser according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of the semiconductor laser between line II and II shown in FIG. 1. It is the top view of the semiconductor laser seen from the positive electrode side shown in FIG. FIG. 3 is a first process diagram showing a manufacturing process of the semiconductor laser shown in FIG. 1. FIG. 4 is a second process diagram showing a manufacturing process of the semiconductor laser shown in FIG. 1. FIG. 6 is a third process diagram illustrating a manufacturing process of the semiconductor laser illustrated in FIG. 1. It is another perspective view of the semiconductor laser by embodiment of this invention. It is a top view of the semiconductor laser seen from the positive electrode side shown in FIG. FIG. 9 is a cross-sectional view of the multilayer reflective film shown in FIGS. 7 and 8. FIG. 7 is still another perspective view of a semiconductor laser according to an embodiment of the present invention. It is a top view of the semiconductor laser seen from the positive electrode side shown in FIG. FIG. 7 is still another perspective view of a semiconductor laser according to an embodiment of the present invention. It is a top view of the semiconductor laser seen from the positive electrode side shown in FIG. It is a top view of the butterfly type module provided with the semiconductor laser shown in FIG. It is sectional drawing of the CAN module provided with the semiconductor laser shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate, 2 Buffer layer, 3, 7 Clad layer, 4, 6 Optical confinement layer, 5 Active layer, 5A Emission surface, 5B, 17A End surface, 8 Contact layer, 9, 14 Insulating film 10, 10A, 10B, 10C , 210, 360 Semiconductor laser, 11, 17, 18 Window member, 11A, 18A, 61A, 70A Curved surface, 12 Positive electrode, 13 Negative electrode, 15 Multi-layer reflective film, 16 Low reflective film, 20 Si thin film, 30, 151 153, 155, 157, 159, 161, 163 SiO ₂ film, 40, 41 mixed crystal region, 50, 70, 80 photoresist, 60, 61 SiN _x film, 152, 154, 156, 158, 160, 162, 164 Amorphous Si film, 200 butterfly module, 211, 221, 231, 232 wire, 220 photodiode, 230 carrier , 240, 380 optical fiber, 250, 370 lens, 260 butterfly package, 270 base, 280A, 280B external terminal, 300 CAN module, 310 support base, 320, 330, 340 fixing member, 350 CAN package, 611 opening.

Claims (7)

An active layer formed on the substrate and emitting laser light;
The laser beam is disposed in contact with the emission surface of the active layer and is made of a semiconductor material having an energy gap larger than the energy gap corresponding to the wavelength of the laser beam, and is opposite to the side in contact with the emission surface And a window member having a curved surface.   The semiconductor laser according to claim 1, wherein the active layer and the window member are arranged in an in-plane direction of the substrate.   The semiconductor laser according to claim 1, wherein the curved surface is convex toward the active layer.   4. The semiconductor laser according to claim 1, wherein a surface of the active layer opposite to the emission surface is a flat surface. 5.   The semiconductor laser according to claim 4, further comprising a low reflection film formed on the flat surface and having a reflectance lower than a reference value.   The semiconductor laser according to claim 1, further comprising a highly reflective film formed on the curved surface and having a reflectance higher than a reference value.   A laser module comprising the semiconductor laser according to any one of claims 1 to 6.

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