JP2008241683A - Probe for microscope and scanning probe microscope - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a probe for a microscope capable of simultaneously a shape of a sample surface and a plurality of physical properties in a micro region, and a scanning probe microscope. <P>SOLUTION: The probe for a microscope comprises: a cantilever 22 having an insulation layer 28 on the surface; a probe section 21 placed at the top end of the cantilever, that is needle-shaped; a first metal structure 29 arranged on the upper surface of the cantilever, having a first end at the top end of the cantilever; a second metal structure 30 arranged on the upper surface of the cantilever, having a second end 301 at the top end of the cantilever; a conductive layer 70 formed in the vicinity of the probe section; and a third metal structure 80 placed apart from the first and the second metal structure on the upper surface of the cantilever, and connected to the conductive layer. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a microscope probe and a scanning probe microscope for observing a sample surface.

Currently, a scanning probe microscope (SPM: Scanning Probe Microscope) is used as a microscope for observing a nanometer-order minute region on the sample surface. Among these SPMs, an atomic force microscope (AFM) that uses a cantilever provided with a probe at the tip as a scanning probe has attracted particular attention. This atomic force microscope scans the cantilever probe along the sample surface, and detects the atomic force (attraction or repulsive force) generated between the sample surface and the probe as the deflection amount of the cantilever. The shape of the sample surface is measured. There are two types of cantilevers: optical lever type and self-detecting type because of the difference in the measurement method of the amount of deflection. In such a scanning probe microscope, in recent years, a method for measuring an accurate temperature distribution in a micro area on the sample surface as well as an uneven shape on the sample surface (see, for example, Patent Document 1) or a sample together with an uneven shape on the sample surface. A method for measuring the surface potential in a minute region on the surface (for example, see Patent Document 2) has been proposed.
JP-A-8-105801 JP 2000-65718 A

  However, in the above-described cantilever of Patent Document 1, it is possible to separate and observe the uneven shape and temperature distribution of the sample surface by forming a thermocouple at the tip of the cantilever. In the probe, conductivity is imparted to the probe of the SPM probe and the vicinity thereof, and electrode wiring is formed from the probe, thereby applying a voltage between the sample and the probe by applying voltage between the sample and the probe. It was possible to measure the surface potential of the surface, and in any method, the characteristics that could be measured with one cantilever were one type other than the uneven shape of the sample surface.

  Therefore, for example, when it is desired to measure both the temperature distribution and the surface potential characteristics of the sample, it is necessary to replace the cantilever corresponding to each characteristic. That is, every time the cantilever is replaced, the measurement position of the sample must be adjusted. Therefore, when measuring a minute part on the sample, it is difficult to measure the exact same position. In addition, since it takes time to replace the cantilever and perform alignment again, it is impossible to measure a sample whose sample characteristics change over time.

  In addition, as a so-called multi-cantilever with a plurality of cantilevers, a method of omitting the trouble of changing the cantilever can be considered. When performing the above, there is a problem that the first cantilever interferes with another part of the sample surface. As a countermeasure, a method of releasing the first cantilever so as not to interfere with the sample surface has been proposed, but it is necessary to provide a structure for deflecting the cantilever. In addition, it is necessary to move to a probe (or sample) measurement site, and it is difficult to perform measurement at exactly the same position.

  The present invention has been made to solve the above problems, and provides a microscope probe and a scanning microscope capable of simultaneously measuring the shape of a sample surface and a plurality of physical properties in a minute region. It is to be.

  In order to solve the above problems, the present invention proposes the following means.

  The microscope probe according to the present invention includes a cantilever having an insulating layer on an upper surface, a sharpened probe portion provided at the tip of the cantilever, a top surface of the cantilever, and a first portion at the tip of the cantilever. A first metal structure having a second end, a second metal structure provided on an upper surface of the cantilever and having a second end at a tip of the cantilever, the probe portion and the vicinity thereof A conductive layer formed; a third metal structure provided on the upper surface of the cantilever and spaced apart from the first metal structure and the second metal structure; and connected to the conductive layer; A temperature measuring element formed by overlapping the first end portion and the second end portion, and an electric characteristic detecting element made of the conductive layer and the third metal structure are used.

  According to the microscope probe according to the above invention, the temperature measuring element formed by overlapping the first end of the first metal structure and the second end of the second metal structure, the probe The surface shape of the sample can be measured and the temperature characteristic and the electrical characteristic of the sample can be accurately measured by the electric characteristic detecting element comprising the needle and the conductive layer formed in the vicinity thereof and the third metal structure.

  Furthermore, the microscope probe of the present invention has a stress concentration portion that is easily bent at the proximal end portion of the cantilever in the microscope probe, and the stress concentration portion has a spring constant that is equal to the left and right with respect to the central axis of the cantilever. It was set as the structure which has.

  According to the microscope probe according to the present invention, since the stress concentration portion where the cantilever is easily bent has a spring constant equal to the left and right with respect to the central axis, the deflection of the entire cantilever during measurement becomes uniform. Highly accurate observation is possible.

  Further, the scanning probe microscope of the present invention includes the above-described microscope probe and the displacement of the probe that is displaced according to the sample surface shape by scanning the sample surface with the probe portion approaching the surface to be measured of the sample. Displacement detecting means for detecting data, moving means for scanning the probe part in two directions relatively parallel to the sample surface and perpendicular to each other, and moving in a direction perpendicular to the sample surface, and for temperature measurement The temperature characteristic detecting means for detecting the thermoelectromotive force of the element and the electric characteristic detecting means for measuring a change in current flowing between the electric characteristic detecting element and the sample surface and the surface potential of the sample surface are provided.

  According to the scanning probe microscope according to the present invention, not only the shape of the sample surface microregion having irregularities on the surface, but also the temperature distribution and thermal characteristics, and the current change flowing between the electrical property detection element and the sample surface, The surface potential of the sample surface can be simultaneously measured with high sensitivity.

  Further, the scanning probe microscope of the present invention comprises a vibration means for resonating or forcibly vibrating the probe section at an arbitrary frequency, and the displacement detection means is a vibration detection means for detecting the vibration state of the probe section. It was.

  According to the scanning probe microscope according to the present invention, when measuring the surface shape of a sample by vibrating a cantilever such as a DFM (Dynamic Force Mode), the resonance frequency of the cantilever is increased, and the interaction with the sample is highly sensitive. Can be measured.

  In the probe of the present invention, the displacement detection means is provided in the cantilever.

  Further, the displacement detecting means is a piezoresistive element.

  According to the probe of the present invention, since it is not necessary to provide the cantilever with a reflecting surface for reflecting the laser light, it is not necessary to be restricted by the shape of the cantilever, the degree of freedom in designing the probe is improved, and it is easy to manufacture. In addition, since a large-scale device such as a laser light source is unnecessary, the device cost and the device space can be reduced.

  According to the present invention, not only the shape of the sample surface and the shape of the minute region of the sample surface, but also the temperature distribution, the thermal characteristics, and the current change flowing between the electrical property detecting element and the sample surface, The surface potential of the sample surface can be simultaneously measured with high accuracy.

  Embodiments of the present invention will be described below in detail with reference to the drawings.

  1 to 11 show a first embodiment according to the present invention. FIG. 1 shows a block diagram of a scanning probe microscope. 2 is a perspective view of the probe, FIG. 3 is a plan view, and FIG. 4 is a cross-sectional view. FIGS. 5 to 9 show process diagrams of the probe manufacturing process. 10 and 11 show a modification of the first embodiment.

  As shown in FIG. 1, a scanning probe microscope 1 includes a sample support unit 9 that supports a sample 100, a sample moving unit 3 that moves the sample 100, and a sample upper surface S of the sample 100 that is relatively moved by the sample moving unit 3. The probe 20 having the probe portion 21 to be scanned automatically and the vibration means 500 that vibrates the probe portion 21 of the probe 20 at a frequency at which the cantilever 22 resonates or forcibly vibrates. The probe 20 includes a cantilever 22 provided with a probe portion 21 protruding from the tip portion, and a main body portion 23 that fixes the base end portion of the cantilever 22 in a cantilever state so that the tip portion of the cantilever 22 is a free end. And. In FIG. 1, the upper surface of the cantilever 22 is illustrated so as to face downward.

  The sample moving means 3 supports the sample supporting portion 9 and moves in the X and Y directions which are two directions parallel to the sample upper surface S and perpendicular to each other and the Z direction which is a direction perpendicular to the sample upper surface S. And a driving device 4 for driving the sample moving means 3. More specifically, the sample moving means 3 includes a coarse movement mechanism that coarsely moves the sample 100 in the X, Y, and Z directions, an XY scanner that finely moves the sample 100, and a Z scanner. An example of the driving device 4 corresponding to the coarse movement mechanism is a stepping motor. The driving device 4 corresponding to the XY scanner and the Z scanner is, for example, a piezoelectric element made of PZT (lead zirconate titanate) or the like. When a voltage is applied, a sample is applied according to the voltage application amount, polarity, etc. It is possible to slightly move 100 in the XYZ directions. The vibration means 500 is connected to the probe 20 to vibrate the probe 20 so as to vibrate at a predetermined frequency and amplitude, and the excitation means 500 applies a voltage to the piezoelectric element to vibrate the piezoelectric element. A vibration power source 5 is provided.

  Further, as shown in FIG. 1, the scanning probe microscope 1 includes a displacement detection unit 6 that detects a vibration state of the probe portion 21 of the probe 20 vibrated by the vibration unit 500. The displacement detector 6 includes a laser light source that irradiates a laser beam onto a reflective surface (for example, formed by coating a metal material such as gold or aluminum: not shown) formed on the back surface of the probe unit 21, A laser power source that is a power source and a photodiode that detects the laser light reflected by the reflecting surface are provided. The laser beam detected by the photodiode is output as a DIF signal, amplified by a preamplifier, converted to DC by an AC-DC converter, and sent to the computer 7. The computer 7 is provided with a Z voltage feedback circuit, which applies a voltage to the Z scanner of the sample moving means 3 based on the DIF signal input to the computer 7 to move the sample 100 minutely in the Z direction.

  As shown in FIG. 1, the scanning probe microscope 1 includes a temperature characteristic detection unit 8 that is connected to a probe 20 and measures a thermoelectromotive force generated by a temperature measurement element installed in the vicinity of the probe unit 21. The electric characteristic detecting device 10 is connected to an electric characteristic detecting element formed on the surface of the probe 21 and in the vicinity thereof, and includes an electric characteristic detecting means 10 for measuring a current change flowing between the upper surface S and the surface potential of the upper surface S. Further, the computer 7 is connected to the driving device 4, the vibration power source 5, the displacement detecting means 6, the temperature characteristic detecting means 8, and the electric characteristic detecting means 10 as described above.

  With the above configuration, the scanning probe microscope 1 measures the surface shape, temperature characteristics, and electrical characteristics of the sample 100 as shown below. First, under the control of the computer 7, the excitation unit 500 is vibrated by the excitation power source 5, and the laser beam is irradiated from the displacement detection unit 6 to the reflection surface of the cantilever 22 of the probe 20. The cantilever 22 vibrates up and down by the vibration transmitted from the vibrating means 500, whereby the laser beam reflected by the cantilever 22 and detected by the photodiode of the displacement detecting means 6 forms a vibration waveform having a constant amplitude and frequency. . In this state, the driving device 4 is driven under the control of the computer 7 to scan the sample 100 in the X and Y directions, and the surface shape, temperature characteristics, and electrical characteristics of the sample 100 are measured.

  If there is unevenness at the position where the probe portion 21 of the probe 20 is scanned, the vibration amplitude of the laser light detected by the photodiode of the displacement detection means 6 is attenuated. This vibration amplitude is amplified by a preamplifier as a DIF signal, converted into a direct current by an AC-DC converter, and input to the computer 7. The computer 7 is provided with the aforementioned Z voltage feedback circuit. When the vibration amplitude converted into the DIF signal exceeds the threshold value, the drive device 4 is driven based on the input DIF signal, and the vibration amplitude is reduced. The sample moving means 3 is moved and adjusted in the Z direction so as to be constant within the threshold value. The surface shape of the sample 100 is measured by repeating this by moving the sample 100 in the X and Y directions by the driving device 4.

  Further, in parallel with the measurement of the surface shape of the sample 100, the thermoelectromotive force generated in the vicinity of the probe portion 21 and the electrical characteristics are measured. The measurement results of the surface shape, temperature characteristics, and electrical characteristics of the sample 100 are displayed by the computer 7 together with the scanning positions of the sample 100 in the X and Y directions.

  Next, a detailed configuration of the probe 20 mounted on the scanning probe microscope 1 will be described.

  FIG. 2 is a partial perspective view showing the main part of the probe 20, but it is described so as to be upside down with respect to the direction in which it is mounted on the scanning probe microscope 1.

As shown in FIG. 2, the probe 20 includes a sharpened probe portion 21, a cantilever 22 provided with the probe portion 21 projecting from the distal end portion, and a proximal end portion of the cantilever 22, the distal end portion being a free end. A main body 23 that is fixed in a cantilevered state, a first metal structure 29, a second metal structure 30, a first end 291 and a second of the first metal structure 29. The temperature measuring element formed by overlapping the second end portion 301 of the metal structure 30, the probe portion 21 and the conductive layer 70 formed in the vicinity thereof, and the first connected to the conductive layer 70. 3 metal structure 80, and an electric characteristic detection element including the conductive layer 70 and the third metal structure 80. The cantilever 22 and the main body 23 include a silicon substrate, in particular, a silicon active layer 24 and a silicon support layer 25 made of silicon, and a BOX layer made of SiO ₂ interposed between the silicon active layer 24 and the silicon support layer 25. 26 is formed from an SOI substrate 27 (Silicon on Insulator).

3 and FIG. 3 are cross-sectional views taken along the line AA ′ showing the central axis of the cantilever 22 (the axis extending in the longitudinal direction of the cantilever 22 through the center in the width direction of the cantilever 22) described in the plan views of FIGS. 4, an insulating layer 28 is formed on the upper surface of the cantilever 22, and the first metal structure 29, the second metal structure 30, and the third metal are formed on the insulating layer 28 from the distal end portion to the proximal end portion. A structure 80 is formed. The insulating layer 28 is a silicon oxide film made of, for example, SiO ₂ . The first metal structure 29 is a metal film made of chromium, and the second metal structure 30 is a metal film made of nickel. The first metal structure and the second metal structure are not limited to chromium and nickel, but may be any material that can form a thermocouple, such as gold, platinum, platinum rhodium, nichrome, chromel, and alumel. . The third metal structure is formed of a metal film made of, for example, aluminum. The probe portion 21 is formed at the tip of the upper surface of the cantilever 22 and is made conductive by forming a conductive layer 70 made of platinum on the surface and in the vicinity thereof. The probe portion 21, the conductive layer 70, and the third metal structure 80 constitute an electrical property detection element. Note that the third metal structure and the conductive layer are not limited to aluminum and platinum, but may be any material having conductivity such as metal.

  In the probe 20 of this embodiment, since the temperature measuring element is formed in the vicinity of the probe portion 21, the temperature of the sample is transmitted to the temperature measuring element with little loss, and a thermoelectromotive force is generated. The temperature characteristic detection means 8 shown in FIG. 1 can measure the temperature characteristic of the sample 100 with high accuracy. Further, the electrical characteristics measured by the electrical property detecting element configured by the conductive layer 70 and the third metal structure 80 formed in the vicinity of the probe portion 21, for example, flows between the conductive layer 70 and the sample 100. The current change and the surface potential of the sample 100 can be measured with high accuracy and simultaneously with the temperature characteristic by the electric characteristic detecting means 10 shown in FIG. Further, since the tip of the probe 21 is sharpened, even if the sample 100 has a surface shape having irregularities with a high aspect ratio, the probe portion 21 accurately follows the irregularities, The depth and width can be measured with high accuracy, and an accurate observation image can be obtained. Furthermore, it is possible to measure the temperature characteristics and electrical characteristics of a deeply uneven portion with high tracking accuracy and high accuracy.

  Next, a method for manufacturing the probe 20 of this embodiment will be described. As described above, the cantilever 22 and the main body 23 of the probe 20 are formed from the SOI substrate 27 including the silicon active layer 24, the BOX layer 26, and the silicon support layer 25. Here, the thickness of the silicon active layer 24 is set to the thickness of the cantilever 22, and the thicknesses of the BOX layer 26 and the silicon support layer 25 are set to the thickness of the main body portion 23. Hereinafter, it demonstrates in order.

  5 to 9 are cross-sectional views of the formation process of the probe 20 in the AA ′ cross section of FIG. First, as shown in FIG. 5A, a silicon oxide film 33 is formed by thermally oxidizing the front surface and the back surface of the SOI substrate 27. Further, a photoresist film 31 serving as an etching mask is formed on the silicon oxide film 33 on the surface side. Next, the surface of the silicon oxide film 33 is etched using a buffered hydrofluoric acid solution (BHF) using the photoresist film 31 as a mask to form the probe portion 21 as shown in FIG. 5B. The silicon oxide film 33 serving as a mask is patterned. Subsequently, by performing reactive ion etching (RIE) using the patterned silicon oxide film 33 as a mask, as shown in FIG. 5C, the probe 21 is placed under the silicon oxide film 33 as a mask. Is formed. Then, by etching the silicon oxide film 33 which is a mask using a buffered hydrofluoric acid solution (BHF), the sharpened probe portion 21 is formed as shown in FIG. The photoresist film may be a positive type or a negative type. As a method for etching the silicon active layer 24, either dry etching or wet etching may be used, but dry etching is preferable. For dry etching, there are DRIE (Deep Reactive Ion Etching) and the like. In the case of wet etching, there is anisotropic etching using an alkaline etchant such as potassium hydroxide (KOH) or tetramethylammonium hydroxide (TMAH).

  Next, as shown in FIG. 6A, the insulating layer 28 is formed by covering the portion of the silicon active layer 24 other than the probe 21 and the vicinity of the probe with a silicon oxide film. Subsequently, as shown in FIG. 6B, the conductive layer 70 is formed by covering the surface of the probe portion 21 and the vicinity thereof with platinum or the like by sputtering. Further, as shown in FIG. 6C, a third metal structure 80 (only the conductive layer 70 portion is shown) is formed from the conductive layer 70 to the cantilever 22 and the main body 23 with aluminum or the like.

  Next, as shown in FIG. 7A, portions other than the portion to be the first metal structure 29 on the silicon active layer 24 on which the probe portion 21, the conductive layer 70, and the third metal structure 80 are formed. Is patterned with a photoresist film 34. Next, as shown in FIG. 7B, a chromium film is formed on the entire surface by sputtering. Then, as shown in FIG. 7C, the first metal structure 29 is formed by removing the photoresist film 34.

In addition, the method of forming the chromium film used as the first metal structure 29 is not limited to the sputtering method, and may be an evaporation method. In addition, a chromium film is formed on the entire surface by sputtering or vapor deposition in advance, and a photoresist film is patterned on a portion that becomes the first metal structure 29. Subsequently, the first metal structure 29 may be formed by removing a portion of the chromium film where the photoresist film is not formed by etching.
Similarly, the metal structure 30 is also formed. As shown in FIG. 8A, the second metal structure 30 on the silicon active layer 24 on which the probe portion 21, the conductive layer 70, the third metal structure 80, and the first metal structure 29 are formed; A portion other than the portion to be formed is patterned with the photoresist film 35. Next, as shown in FIG. 8B, a nickel film is formed on the entire surface by sputtering. Then, as shown in FIG. 8C, the second metal structure 30 is formed by removing the photoresist film 35.

In addition, the method of forming the nickel film used as the 2nd metal structure 30 is not restricted to sputtering method, It is good also as a vapor deposition method. In addition, a nickel film is formed on the entire surface in advance by a sputtering method or a vapor deposition method, and a photoresist film is patterned on a portion to be the second metal structure 30. Subsequently, the second metal structure 30 may be formed by removing the nickel film where the photoresist film is not formed by etching.
Furthermore, the order of formation of the first metal structure 29 and the second metal structure 30 is not limited to this, and the first metal structure is formed after the second metal structure is formed. Also good.

  Next, as shown in FIGS. 9A to 9D, the main body portion 23 is formed. First, as shown in FIG. 9A, the silicon oxide film 33 that serves as a mask for forming the main body portion 23 is patterned by etching the silicon oxide film 33. Next, as shown in FIG. 9B, the probe portion 21, the conductive layer 70, the first metal structure 29 (291), the second metal structure 30 (301), and the third metal structure. In order to protect the cantilever 22 in which 80 is disposed, a photoresist film 36 is formed on the entire surface on the cantilever 22 side. Then, as shown in FIG. 9C, the silicon support layer 25 other than the main body 23 is etched using the oxide film 33 as a mask. In this case, either dry etching or wet etching may be used, but wet etching is preferable. Further, as shown in FIG. 9D, the probe 20 is manufactured by removing the BOX layer 26 other than the silicon oxide film 33 and the main body portion 23 by using buffered hydrofluoric acid (BHF) and removing the photoresist film 36. Is done. In the present embodiment, the probe section has a circular cross-sectional shape, but is not limited thereto, and may be any shape such as a quadrangle or a semicircle.

  Here, a modification of the microscope probe of the first embodiment will be described with reference to FIGS. FIG. 10 is an overall plan view showing a modification of the probe according to the first embodiment of the present invention, and FIG. 11 is a partial sectional view taken along the cutting line BB ′ in FIG. Here, the cutting line BB ′ is also a central axis of the cantilever 22 (an axis extending in the longitudinal direction of the cantilever 22 through the center in the width direction of the cantilever 22).

  In the microscope probe 20 shown in FIG. 10, the temperature formed by overlapping the first end 291 of the first metal structure 29 and the second end 301 of the second metal structure 30. The measuring element is formed on the third metal structure 80 with the insulating layer 90 interposed therebetween. Even if the temperature measuring element is formed in this way, the same operation and effect as the probe 20 shown in FIG. 3 can be exhibited.

  12 to 21 show a second embodiment according to the present invention. FIG. 12 shows a block diagram of a scanning probe microscope. FIG. 13 is a plan view of the probe, and FIGS. 14 to 20 are process diagrams of the probe manufacturing process. FIG. 21 is an overall plan view showing a modification of the second embodiment, and shows an example in which a slit is formed at the base of the cantilever. In this second embodiment, members that are the same as those used in the first embodiment described above are assigned the same reference numerals, and descriptions thereof are omitted.

  As shown in FIG. 12, the scanning probe microscope 2 in the present embodiment is the same as the description of FIG. 1 described in the first embodiment with respect to the main configuration, but the displacement of the probe portion 21 of the probe 201 is changed. As a means for measuring, a piezoresistive element that detects the bending of the cantilever provided at the base end of the cantilever 22 is adopted, and a search is made based on the resistance change detected by the displacement detecting means 60 connected to the piezoresistive element. The displacement of the needle part was measured.

  FIG. 13 is an overall plan view of the probe 201, which is shown upside down with respect to the direction in which the probe is mounted on the scanning probe microscope 2. FIG.

As shown in FIG. 13, the probe 201 includes a sharpened probe portion 21, a cantilever 22 provided with the probe portion 21 projecting from the distal end portion, and a proximal end portion of the cantilever 22, the distal end portion being a free end. A main body 23 that is fixed in a cantilevered state, a first metal structure 29, a second metal structure 30, a first end 291 and a second of the first metal structure 29. The temperature measuring element formed by overlapping the second end portion 301 of the metal structure 30, the probe portion 21 and the conductive layer 70 formed in the vicinity thereof, and the first connected to the conductive layer 70. 3 metal structure 80, and an electrical property detection element including the conductive layer 70 and the third metal structure 80. The temperature measuring element and the third metal structure 80 are electrically insulated by the insulating layer 90. A piezoresistive element 40 for detecting the bending of the cantilever 22 is formed at the base end portion of the cantilever 22, and a piezoresistive element electrode wiring 41 for detecting a change in resistance of the piezoresistive element 40 is formed on the main body portion 23 of the cantilever 22. And 42 are formed. The cantilever 22 and the main body 23 include a silicon substrate, in particular, a silicon active layer 24 and a silicon support layer 25 made of silicon, and a BOX layer made of SiO ₂ interposed between the silicon active layer 24 and the silicon support layer 25. 26 is formed from an SOI substrate 27 (Silicon on Insulator).

  Next, a method for manufacturing the probe 201 of this embodiment will be described. 14 is a partial cross-sectional view taken along a cutting line CC ′ in FIG. 13, FIGS. 15 and 16 are partial cross-sectional views taken along a cutting line DD ′ in FIG. 13, and FIGS. It is a fragmentary sectional view in the cutting line CC 'in FIG. 13 similarly. Here, the cutting line CC ′ is also the central axis of the cantilever 22.

  As described above, the cantilever 22 and the main body 23 of the probe 201 are formed from the SOI substrate 27 including the silicon active layer 24, the BOX layer 26, and the silicon support layer 25. Here, the thickness of the silicon active layer 24 is set to the thickness of the cantilever 22, and the thicknesses of the BOX layer 26 and the silicon support layer 25 are set to the thickness of the main body portion 23. Hereinafter, it demonstrates in order.

  First, as shown in FIG. 14A, the silicon oxide film 33 is formed by thermally oxidizing the front surface and the back surface of the SOI substrate 27. Further, a photoresist film 50 serving as an etching mask is formed on the silicon oxide film 33 on the surface side. Next, the surface of the silicon oxide film 33 is etched using a buffered hydrofluoric acid solution (BHF) using the photoresist film 50 as a mask to form the probe portion 21 as shown in FIG. 14B. The silicon oxide film 33 serving as a mask is patterned. Subsequently, by performing reactive ion etching (RIE) using the patterned silicon oxide film 33 as a mask, as shown in FIG. 14C, the probe 21 is placed under the silicon oxide film 33 as a mask. Is formed. Then, by using the buffered hydrofluoric acid solution (BHF) to etch the silicon oxide film 33 as a mask, the sharpened probe portion 21 is formed as shown in FIG. The photoresist film may be a positive type or a negative type. As a method for etching the silicon active layer 24, either dry etching or wet etching may be used, but dry etching is preferable. For dry etching, there are DRIE (Deep Reactive Ion Etching) and the like. In the case of wet etching, anisotropic etching using an alkaline etchant such as potassium hydroxide (KOH) or tetramethylammonium hydroxide (TMAH) is available.

  Next, as shown in FIG. 15, the piezoresistive element 40 is formed at the base end portion of the cantilever 22. First, as shown in FIG. 15A, the entire side where the cantilever 22 is formed is patterned with a photoresist film 51. Next, as shown in FIG. 15B, the photoresist film 51 in a range where the piezoresistive element 40 is to be formed is removed by photolithography. Then, as shown in FIG. 15C, by using the photoresist film 51 as a mask, boron is ion-implanted into the silicon active layer 24 to remove the photoresist film 51, so that the cantilever is shown in FIG. A piezoresistive element 40 is formed at the base end portion of 22. The photoresist film may be a positive type or a negative type.

  Next, although not shown, an insulating layer 28 is formed on the upper surface of the cantilever 22. The insulating layer 28 is formed by a thermal oxidation method.

  Subsequently, as shown in FIGS. 16A to 16D, electrode wiring is formed on the piezoresistive element 40. First, as shown in FIG. 16A, the photoresist film 52 is used to pattern a portion other than the connection portion between the piezoresistive element 40 and the piezoresistive element electrode wires 41 and 42. Next, the portion of the insulating layer 28 not protected by the resist is removed with hydrofluoric acid, and the resist 52 is further removed. Next, as shown in FIG. 16B, an aluminum film serving as an electrode wiring material is formed on the entire surface of the cantilever 22 on which the piezoresistive element is formed by sputtering, and as shown in FIG. 16C, the piezoresistive element is formed. A photoresist film 53 is formed on the portions to be the electrode wirings 41 and 42. As shown in FIG. 16D, piezoresistive element electrode wires 41 and 42 are formed by removing a portion of the aluminum film where the photoresist 53 is not formed and removing the photoresist film 53.

  The method of forming the piezoresistive element electrode wires 41 and 42 is not limited to the sputtering method, and may be a vapor deposition method. Further, a photoresist film 53 is formed in advance on the entire surface, and a portion of the photoresist film 53 where the piezoresistive element electrode wires 41 and 42 are to be formed is removed. Subsequently, an aluminum film may be formed by a sputtering method or a vapor deposition method, and then the photoresist film 53 may be removed to form the piezoresistive element electrode wirings 41 and 42.

Next, as shown in FIG. 17A, the insulating layer 28 is formed by covering the portion of the silicon active layer 24 other than the probe 21 and the vicinity of the probe with a silicon oxide film. Subsequently, as shown in FIG. 17B, the conductive layer 70 is formed by covering the surface of the probe portion 21 and the vicinity thereof with platinum or the like by sputtering. Further, as shown in FIG. 17C, a third metal structure 80 extending from the conductive layer 70 to the cantilever 22 and the main body 23 is formed of aluminum or the like.
Next, as shown in FIGS. 18A to 18C, a first metal structure 29 is formed on the insulating layer 28 in the metal structure forming step. First, as shown in FIG. 18A, a portion other than the portion that becomes the first metal structure 29 is patterned with a photoresist film 54. Next, as shown in FIG. 18B, a chromium film is formed on the entire surface by sputtering. Then, as shown in FIG. 18C, the first metal structure 29 is formed by removing the photoresist film 54.

In addition, the method of forming the chromium film used as the first metal structure 29 is not limited to the sputtering method, and may be an evaporation method. In addition, a chromium film is formed on the entire surface by sputtering or vapor deposition in advance, and a photoresist film is patterned on a portion that becomes the first metal structure 29. Subsequently, the first metal structure 29 may be formed by removing a portion of the chromium film where the photoresist film is not formed by etching.
Similarly, the metal structure 30 is also formed. As shown in FIG. 19A, the second metal structure 30 on the silicon active layer 24 on which the probe portion 21, the conductive layer 70, the third metal structure 80, and the first metal structure 29 are formed; A portion other than the portion to be formed is patterned with the photoresist film 55. Next, as shown in FIG. 19B, a nickel film is formed on the entire surface by sputtering. Then, as shown in FIG. 19C, the second metal structure 30 is formed by removing the photoresist film 55.

  In addition, the method of forming the nickel film used as the 2nd metal structure 30 is not restricted to sputtering method, It is good also as a vapor deposition method. In addition, a nickel film is formed on the entire surface in advance by a sputtering method or a vapor deposition method, and a photoresist film is patterned on a portion to be the second metal structure 30. Subsequently, the second metal structure 30 may be formed by removing the nickel film where the photoresist film is not formed by etching. Furthermore, the order of formation of the first metal structure 29 and the second metal structure 30 is not limited to this, and the first metal structure is formed after the second metal structure is formed. Also good.

  Next, as shown in FIGS. 20A to 20D, the main body portion 23 is formed. First, as shown in FIG. 9A, the silicon oxide film 33 that serves as a mask for forming the main body portion 23 is patterned by etching the silicon oxide film 33. Next, as shown in FIG. 20B, the probe portion 21, the conductive layer 70, the first metal structure 29 (291), the second metal structure 30 (301), and the third metal structure. In order to protect the cantilever 22 in which 80 is disposed, a photoresist film 56 is formed on the entire surface on the cantilever 22 side. Then, as shown in FIG. 20C, the silicon support layer 25 other than the main body 23 is etched using the oxide film 33 as a mask. In this case, either dry etching or wet etching may be used, but wet etching is preferable. Further, as shown in FIG. 20D, the probe 201 is manufactured by removing the BOX layer 26 other than the silicon oxide film 33 and the main body 23 by using buffered hydrofluoric acid (BHF) and removing the photoresist film 56. Is done.

  In the present embodiment, the probe section has a circular cross-sectional shape, but is not limited thereto, and may be any shape such as a quadrangle or a semicircle. In each of the above-described steps, patterning is performed by exposing the photoresist film. However, the present invention is not limited to this, and a direct drawing method using an electron beam or the like may be used.

  Further, in the present embodiment, as a modification thereof, as shown in FIG. 21, a structure in which a slit 24S is formed at the base end portion of the cantilever 22 may be adopted. As a result, the base end portion of the cantilever 22 becomes a stress-concentrated portion that is easy to bend, thereby enabling measurement with higher accuracy.

  In the case of a self-detecting cantilever in which such a stress concentration portion is formed at the base end portion, the embodiments described below are effective.

  22 to 29 show a third embodiment according to the present invention. FIG. 22 is an overall plan view of the probe of the third embodiment. 23 to 27 are a partial cross-sectional view taken along a cutting line EE ′ and a partial cross-sectional view taken along a cutting line FF ′ in FIG. 22, and FIG. 23 illustrates a probe according to the third embodiment. FIG. 24 to FIG. 27 are reference partial cross-sectional views for illustrating the modification of the probe of the third embodiment.

  In the third embodiment, the same members as those used in the first embodiment and the second embodiment described above are denoted by the same reference numerals, and the description thereof is omitted. FIG. 22 is an overall plan view of the probe 211, which is shown upside down with respect to the direction of mounting on the scanning probe microscope.

As shown in FIG. 22, the probe 211 includes a sharpened probe portion 21, a cantilever 22 provided with the probe portion 21 projecting from the distal end portion, and a proximal end portion of the cantilever 22, the distal end portion being a free end. A main body 23 that is fixed in a cantilevered state, a first metal structure 29, a second metal structure 30, a first end 291 and a second of the first metal structure 29. The temperature measuring element formed by overlapping the second end portion 301 of the metal structure 30, the probe portion 21 and the conductive layer 70 formed in the vicinity thereof, and the first connected to the conductive layer 70. 3 metal structure 80, and an electrical property detection element including the conductive layer 70 and the third metal structure 80. The temperature measuring element and the third metal structure 80 are electrically insulated by the insulating layer 90. A piezoresistive element 40 for detecting the bending of the cantilever 22 is formed at the base end portion of the cantilever 22, and a piezoresistive element electrode wiring 41 for detecting a change in resistance of the piezoresistive element 40 is formed on the main body portion 23 of the cantilever 22. And 42 are formed. The cantilever 22 and the main body 23 include a silicon substrate, in particular, a silicon active layer 24 and a silicon support layer 25 made of silicon, and a BOX layer made of SiO ₂ interposed between the silicon active layer 24 and the silicon support layer 25. 26 is formed from an SOI substrate 27 (Silicon on Insulator). Here, the cutting line EE ′ and the cutting line FF ′ are partial cross-sectional views of the portion where the piezoresistive element 40 of the cantilever 22 is formed, but the cutting line FF ′ portion is particularly the cantilever 22. A slit 24S is formed at the base end of the cantilever 22, and the base end of the cantilever 22 is a portion where the stress is concentrated easily. Here, the slit 24 </ b> S extends between the first metal structure 29 and the third metal structure 80 and between the second metal structure 30 and the third metal structure 80 so as to extend substantially parallel to the central axis of the cantilever 22. In total, two metal structures 80 are provided between each of the two metal structures 80.

  The manufacturing method according to the third embodiment is the same as the method according to the second embodiment described above, but there are some differences in the manufacturing method in each of the four types of modifications described in the third embodiment. Therefore, the part is described separately.

  FIG. 24 is a cross-sectional view of one modified example of the probe in the third embodiment. (A) is a fragmentary sectional view in cutting line EE ', (b) is a fragmentary sectional view which shows the stress concentration part in cutting line FF'.

  In the manufacturing method described above, the formation thickness of the second metal structure 30 (301) at the stress concentration portion provided at the base end of the cantilever 22 is thicker than that of the first metal structure 29 (291). By forming it thin, the left and right deflections of the stress concentration portion provided at the proximal end portion of the cantilever 22 are made equal. That is, the mutual formation thicknesses of the first metal structure 29 (291) and the second metal structure 30 (301) are adjusted so that the left and right spring constants with respect to the central axis of the cantilever 22 are equal. . In the present embodiment, the example in which the formation thickness of the second metal structure 30 (301) is relatively thicker than the formation thickness of the first metal structure 29 (291) is shown, but this is not a limitation. Conversely, the formation thickness of the second metal structure 30 (301) may be relatively thinner than the formation thickness of the first metal structure 29 (291). Although not shown, the formation thickness of the second metal structure 30 (301) provided only at the stress concentration portion provided at the base end portion of the cantilever 22 may be increased or decreased, or the second metal structure may be reduced. The formation thickness of the entire body 30 (301) may be increased or decreased.

  FIG. 25 is a sectional view of one modification of the probe in the third embodiment. (A) is the fragmentary sectional view in cutting line EE ', (b) is the fragmentary sectional view in cutting line FF'. In the manufacturing method described above, the formation width of the second metal structure 30 (301) at the stress concentration portion provided at the base end of the cantilever 22 is wider than that of the first metal structure 29 (291). By forming it narrowly, the left and right deflections of the stress concentration portion provided at the base end of the cantilever 22 are made equal. That is, the mutual formation width of the first metal structure 29 (291) and the second metal structure 30 (301) is adjusted so that the left and right spring constants with respect to the central axis of the cantilever 22 are equal. . In the present embodiment, the example in which the formation width of the second metal structure 30 (301) is relatively wider than the formation width of the first metal structure 29 (291) is shown, but this is not restrictive. Conversely, the formation width of the second metal structure 30 (301) may be relatively narrower than the formation width of the first metal structure 29 (291). Although not shown, the formation width of the second metal structure 30 (301) provided only at the stress concentration portion provided at the base end portion of the cantilever 22 may be widened or narrowed. The formation width of the entire body 30 (301) may be widened or narrowed.

  FIG. 26 is a cross-sectional view of one modified example of the probe in the third embodiment. (A) is the fragmentary sectional view in cutting line EE ', (b) is the fragmentary sectional view in cutting line FF'. In the above manufacturing method, by forming the thickness of one silicon active layer 24a of the stress concentration portion provided at the base end portion of the cantilever 22 to be thicker or thinner than the other silicon active layer 24b, The left and right deflections of the stress concentration portion provided at the proximal end portion of the cantilever 22 are made equal. That is, the thicknesses of the silicon active layers 24a sandwiching the center of the cantilever 22 are adjusted so that the left and right spring constants with respect to the central axis of the cantilever 22 are equal. In the present embodiment, the example in which the thickness of one silicon active layer 24a is formed thicker than the other silicon active layer 24b is shown, but this is not the only case, and conversely the thickness of one silicon active layer 24a is It may be thinner than the silicon active layer 24b. Although not shown, only the silicon active layer 24a at the stress concentration portion provided at the base end portion of the cantilever 22 may be formed thicker or thinner, or a part of the cantilever 22 including the stress concentration portion may be formed. The formation thickness may be increased or decreased.

  FIG. 27 is a cross-sectional view of one modified example of the probe in the third embodiment. (A) is the fragmentary sectional view in cutting line EE ', (b) is the fragmentary sectional view in cutting line FF'. In the above manufacturing method, by forming the width of one silicon active layer 24a at the stress concentration portion provided at the base end portion of the cantilever 22 so as to be wider or narrower than the other silicon active layer 24b, The left and right deflections of the stress concentration portion provided at the proximal end portion of the cantilever 22 are made equal. That is, the widths of the silicon active layers 24a sandwiching the center of the cantilever 22 are adjusted so that the left and right spring constants with respect to the central axis of the cantilever 22 are equal. In the present embodiment, an example in which the width of one silicon active layer 24a is formed narrower than the other silicon active layer 24b is not limited to this, but conversely, the width of one silicon active layer 24a is It may be narrower than the silicon active layer 24b.

  FIG. 28 to FIG. 29 show a modification of the third embodiment according to the present invention. FIG. 28 is an overall plan view of a probe showing a modification of the third embodiment. 29 is a partial cross-sectional view taken along a cutting line GG ′ and a partial cross-sectional view taken along a cutting line HH ′ in FIG.

  In this embodiment, the same members as those used in the first embodiment and the second embodiment described above are denoted by the same reference numerals, and the description thereof is omitted. FIG. 28 is an overall plan view of the probe 212, which is described so as to be upside down with respect to the direction of mounting on the scanning probe microscope.

As shown in FIG. 28, the probe 212 includes a sharpened probe portion 21, a cantilever 22 provided with the probe portion 21 protruding from the distal end portion, and a proximal end portion of the cantilever 22, the distal end portion being a free end. A main body 23 that is fixed in a cantilevered state, a first metal structure 29, a second metal structure 30, a first end 291 and a second of the first metal structure 29. The temperature measuring element formed by overlapping the second end portion 301 of the metal structure 30, the probe portion 21 and the conductive layer 70 formed in the vicinity thereof, and the first connected to the conductive layer 70. 3 metal structure 80, and an electric characteristic detecting element including the conductive layer 70 and the third metal structure 80. A slit 24S is formed at the base end portion of the cantilever 22, and the base end portion of the cantilever 22 is a stress concentrating portion that is easily bent. Here, the slit 24 </ b> S extends between the first metal structure 29 and the third metal structure 80 and between the second metal structure 30 and the third metal structure 80 so as to extend substantially parallel to the central axis of the cantilever 22. In total, two metal structures 80 are provided between each of the two metal structures 80. One of the stress-concentrating portions that are easily bent and provided at the base end of the cantilever has the same thickness and the same width as the second metal structure formed so as to be close to the first metal structure. , And a fourth metal structure formed of the same material, and the second metal structure is in proximity to the other of the stress-concentrating portions that are easily bent and provided at the base end of the cantilever. A fifth metal structure formed of the same thickness, the same width, and the same material as the first metal structure formed in the above is provided. The temperature measuring element and the third metal structure 80 are electrically insulated by the insulating layer 90. A piezoresistive element 40 for detecting the bending of the cantilever 22 is formed at the base end portion of the cantilever 22, and a piezoresistive element electrode wiring 41 for detecting a change in resistance of the piezoresistive element 40 is formed on the main body portion 23 of the cantilever 22. And 42 are formed. The cantilever 22 and the main body 23 include a silicon substrate, in particular, a silicon active layer 24 and a silicon support layer 25 made of silicon, and a BOX layer made of SiO ₂ interposed between the silicon active layer 24 and the silicon support layer 25. 26 is formed from an SOI substrate 27 (Silicon on Insulator).

  About the manufacturing method of this embodiment, the part similar to the method in 2nd Embodiment mentioned above is abbreviate | omitted. Parts with different manufacturing methods are described separately.

  A method for manufacturing the probe 212 of this embodiment will be described in order.

  First, cantilevers are manufactured in the order described in FIGS. 14 to 17 of the second embodiment. Subsequently, as shown in FIGS. 18A to 18C, in the metal structure forming step, the first metal structure 29 and the fifth metal structure 292 are formed on the insulating layer 28. First, as shown in FIG. 18A, the photoresist film 54 is used to pattern portions other than the portions that become the first metal structure 29 and the fifth metal structure 292. Next, as shown in FIG. 18B, a chromium film is formed on the entire surface by sputtering. Then, as shown in FIG. 18C, the first metal structure 29 and the fifth metal structure 292 are formed by removing the photoresist film 54.

  Note that the method for forming the chromium film to be the first metal structure 29 and the fifth metal structure 292 is not limited to the sputtering method, and may be a vapor deposition method. Further, a chromium film is formed in advance on the entire surface by a sputtering method or a vapor deposition method, and a photoresist film is patterned on portions to be the first metal structure 29 and the fifth metal structure 292. Subsequently, the first metal structure 29 and the fifth metal structure 292 may be formed by removing a portion of the chromium film where the photoresist film is not formed by etching.

  Similarly, the metal structure 30 and the fourth metal structure 302 are also formed. As shown in FIG. 19A, on the silicon active layer 24 on which the probe portion 21, the conductive layer 70, the third metal structure 80, the first metal structure 29, and the fifth metal structure 292 are formed. The photoresist film 55 is used to pattern a portion other than the portions to be the second metal structure 30 and the fourth metal structure 302. Next, as shown in FIG. 19B, a nickel film is formed on the entire surface by sputtering. Then, as shown in FIG. 19C, the second metal structure 30 and the fourth metal structure 302 are formed by removing the photoresist film 55.

  Note that the method for forming the nickel film to be the second metal structure 30 and the fourth metal structure 302 is not limited to the sputtering method, and may be a vapor deposition method. In addition, a nickel film is formed on the entire surface in advance by a sputtering method or an evaporation method, and a photoresist film is patterned on portions to be the second metal structure 30 and the fourth metal structure 302. Subsequently, the second metal structure 30 and the fourth metal structure 302 may be formed by removing the nickel film where the photoresist film is not formed by etching. Furthermore, the order of formation of the first metal structure 29 and the fifth metal structure 292, and the second metal structure 30 and the fourth metal structure 302 is not limited to this, and the second metal structure The first metal structure and the fifth metal structure 292 may be formed after forming the structure and the fourth metal structure.

  Subsequently, as shown in FIGS. 20A to 20D, the main body portion 23 is formed. Details are the same as those in the second embodiment, and are omitted here.

  FIG. 29 is a cross-sectional view of a probe in the fourth embodiment. (A) is the fragmentary sectional view in cutting line GG ', (b) is the fragmentary sectional view in cutting line HH'.

  In the manufacturing method described above, the second metal structure 30 (301) is formed on one of the stress concentration portions provided at the base end of the cantilever 22 so as to be close to the first metal structure 29 (291). ) In the state where the fourth metal structure 302 formed of the same thickness, the same width, and the same material is formed, and the other stress concentration portion provided at the base end portion of the cantilever 22 The fifth metal formed of the same thickness, the same width, and the same material as the first metal structure 29 (291) formed in the state of being adjacent to the second metal structure 30 (301) The structure 292 is formed. Accordingly, the left and right spring constants with respect to the central axis of the cantilever 22 are equalized, and the left and right deflections of the stress concentration portion provided at the base end portion of the cantilever 22 are equalized.

  As described above, according to the present invention, not only the shape of the sample surface and the shape of the minute region of the sample surface, but also the temperature distribution, the thermal characteristics, and the electrical property detecting element and the sample surface. The current change flowing through the surface and the surface potential of the sample surface can be simultaneously measured with high accuracy.

  In addition, the magnetic characteristics of the micro area on the sample surface can be measured by coating a magnetic material on the probe portion 21 of the cantilever 22.

  In particular, in the case of a self-detecting cantilever, the first metal structure 29 (291) and the second metal structure 30 (301) are set so that the left and right spring constants with respect to the central axis of the cantilever 22 are equal. ) May be adjusted.

  Alternatively, even if the formation widths of the first metal structure 29 (291) and the second metal structure 30 (301) are adjusted so that the left and right spring constants with respect to the central axis of the cantilever 22 are equal. Good.

  Alternatively, the thicknesses of the silicon active layers 24a sandwiching the center of the cantilever 22 may be adjusted so that the left and right spring constants with respect to the central axis of the cantilever 22 are equal.

  Alternatively, the widths of the silicon active layers 24a sandwiching the center of the cantilever 22 may be adjusted so that the left and right spring constants with respect to the central axis of the cantilever 22 are equal.

  Alternatively, one of the stress concentration portions provided at the base end portion of the cantilever 22 is formed so as to be close to the first metal structure 29 (291) and is the same as the second metal structure 30 (301). In the state where the fourth metal structure 302 formed of the same thickness and the same width and the same material is formed, and in the other of the stress concentration portions provided at the proximal end portion of the cantilever 22, A fifth metal structure 292 formed of the same thickness, the same width, and the same material as the first metal structure 29 (291) formed so as to be close to the metal structure 30 (301) It is good also as a formed state.

  With this configuration, the deflection of the entire cantilever 22 when scanning the sample surface with the cantilever 22 was affected by the difference in the left and right spring constants of the stress concentration portion provided at the base end of the cantilever 22. For example, even when the reflection of the laser beam described in the first embodiment is used as the displacement detecting means 6 or at the base end of the cantilever 22 described in the second embodiment, the deflection of the cantilever can be eliminated. Even in the method of measuring the displacement of the probe portion based on the resistance change detected by the piezoresistive element that detects the deflection, it is possible to detect the deflection due to the state of the sample surface, so that the observation with high accuracy is possible.

  The first, second, and third embodiments of the present invention have been described in detail with reference to the drawings. However, specific configurations are not limited to these embodiments, and do not depart from the gist of the present invention. The range design changes are also included.

  The cantilever and the main body of the probe are formed from an SOI substrate, but the present invention is not limited to this, and a resin, semiconductor, glass, or metal coated with an insulating layer may be used.

  In addition, although a DFM mode scanning probe microscope that measures the surface shape of the sample by applying vibration to the probe is used, the present invention is not limited to this, and the probe may be used in an AFM mode that directly measures the displacement of the probe portion. It is possible to measure unevenness with a high aspect ratio with high sensitivity.

  In addition, the probe is provided with one probe portion, but the present invention is not limited to this, and a plurality of probe portions may be provided so as to project as an array. Further, the probe is not limited to that provided in the scanning probe microscope.

It is a block diagram which shows the structural example of the scanning probe microscope which concerns on the 1st Embodiment of this invention. It is a fragmentary perspective view which shows the principal part of the probe which concerns on the 1st Embodiment of this invention. It is a top view showing the whole probe concerning a 1st embodiment of the present invention. It is a fragmentary sectional view showing an important section of a probe concerning a 1st embodiment of the present invention. It is a fragmentary sectional view for explaining the formation process of the probe concerning a 1st embodiment of the present invention. It is a fragmentary sectional view for explaining the formation process of the probe concerning a 1st embodiment of the present invention. It is a fragmentary sectional view for explaining the formation process of the probe concerning a 1st embodiment of the present invention. It is a fragmentary sectional view for explaining the formation process of the probe concerning a 1st embodiment of the present invention. It is a fragmentary sectional view for explaining the formation process of the probe concerning a 1st embodiment of the present invention. It is a whole top view which shows the modification of the probe which concerns on the 1st Embodiment of this invention. It is a fragmentary sectional view showing an important section of a modification of a probe concerning a 1st embodiment of the present invention. It is a block diagram which shows the structural example of the scanning probe microscope which concerns on the 2nd Embodiment of this invention. It is a top view which shows the whole probe which concerns on the 2nd Embodiment of this invention. It is a fragmentary sectional view for explaining the formation process of the probe concerning a 2nd embodiment of the present invention. It is a fragmentary sectional view for explaining the formation process of the probe concerning a 2nd embodiment of the present invention. It is a fragmentary sectional view for explaining the formation process of the probe concerning a 2nd embodiment of the present invention. It is a fragmentary sectional view for explaining the formation process of the probe concerning a 2nd embodiment of the present invention. It is a fragmentary sectional view for explaining the formation process of the probe concerning a 2nd embodiment of the present invention. It is a fragmentary sectional view for explaining the formation process of the probe concerning a 2nd embodiment of the present invention. It is a fragmentary sectional view for explaining the formation process of the probe concerning a 2nd embodiment of the present invention. It is a whole top view which shows the modification of the probe which concerns on the 2nd Embodiment of this invention. It is a top view which shows the whole probe which concerns on the 3rd Embodiment of this invention. It is a reference fragmentary sectional view for explaining a probe concerning a 3rd embodiment of the present invention. It is a fragmentary sectional view for explaining the modification of the probe concerning a 3rd embodiment of the present invention. It is a fragmentary sectional view for explaining the modification of the probe concerning a 3rd embodiment of the present invention. It is a fragmentary sectional view for explaining the modification of the probe concerning a 3rd embodiment of the present invention. It is a fragmentary sectional view for explaining the modification of the probe concerning a 3rd embodiment of the present invention. It is a whole top view which shows the modification of the probe which concerns on the 3rd Embodiment of this invention. It is a fragmentary sectional view for explaining the modification of the probe concerning a 3rd embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 2 Scanning probe microscope 3 Sample moving means 4 Drive apparatus 5 Excitation power supply 500 Exciting means 500 60 Displacement detecting means 7 Computer 8 Temperature characteristic detecting means 9 Sample support part 10 Electrical characteristic detecting means 20, 201, 211, 212 Probe 21 Probe unit 22 Cantilever 23 Main unit 24, 24a, 24b Silicon active layer 24S Slit 25 Silicon support layer 26 BOX layer 27 SOI substrate (silicon substrate)
28, 90 Insulating layer 29 1st metal structure 291 1st edge part 292 5th metal structure 30 2nd metal structure 301 2nd edge part 302 4th metal structure 33 Silicon oxide film 31 , 32, 34, 35, 36 Photoresist film 40 Piezoresistive element 41, 42 Electrode wiring for piezoresistive element 50, 51, 52, 53, 54, 55, 56 Photoresist film 70 Conductive layer 100 Sample

Claims (11)

A cantilever having an insulating layer on the upper surface;
A sharpened probe provided at the tip of the cantilever;
A first metal structure provided on an upper surface of the cantilever and having a first end at a tip of the cantilever;
A second metal structure provided on the upper surface of the cantilever and having a second end at the tip of the cantilever;
A temperature measuring element formed by overlapping the first end and the second end;
A conductive layer formed in the probe portion and its vicinity;
A third metal structure provided on the upper surface of the cantilever and spaced apart from the first metal structure and the second metal structure and connected to the conductive layer;
An electrical property detecting element comprising the conductive layer and the third metal structure;
A microscope probe.   2. The structure according to claim 1, wherein the base end portion of the cantilever has a stress concentration portion that is easily bent, and the stress concentration portion has a spring constant that is equal to the left and right with respect to the central axis of the cantilever. Microscope probe.   3. The microscope according to claim 2, wherein the structure having the left and right spring constants is configured such that the first metal structure and the second metal structure have different thicknesses. Probe.   3. The microscope according to claim 2, wherein the structure having the left and right equal spring constant is configured such that the first metal structure and the second metal structure have different widths. probe. The structure having the left and right equal spring constant is
A fourth metal structure formed of the same thickness, the same width, and the same material as the second metal structure, which is formed so as to be close to the first metal structure;
A fifth metal structure formed of the same thickness, the same width and the same material as the first metal structure, which is formed in a state of being adjacent to the second metal structure;
The microscope probe according to claim 2, comprising:   3. The microscope probe according to claim 2, wherein the structure having the left and right equal spring constants is configured such that left and right thicknesses of the stress concentration portion are different from each other.   The microscope probe according to claim 2, wherein the structure having the equal spring constant on the left and right is configured so that the left and right widths of the stress concentration portion are different. The microscope probe according to any one of claims 1 to 7,
A displacement detection means for detecting displacement data of the probe that is displaced according to a sample surface shape by causing the probe portion to approach the surface to be measured of the sample and scanning the sample surface;
Moving means for performing scanning in two directions that are relatively parallel to the surface of the sample and perpendicular to each other and moving in a direction perpendicular to the surface of the sample;
Temperature characteristic detecting means for detecting the thermoelectromotive force of the temperature measuring element;
Electrical property detection means connected to the third metal structure;
A scanning probe microscope. Further comprising vibration means for resonating or forcibly vibrating the probe portion at an arbitrary frequency;
The scanning probe microscope according to claim 8, wherein the displacement detection unit is a vibration detection unit that detects a vibration state of the probe unit.   The scanning probe microscope according to claim 8, wherein the displacement detection means is provided in the cantilever.   The scanning probe microscope according to claim 8, wherein the displacement detection means is a piezoresistive element.

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