JP2008235616A - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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JP2008235616A
JP2008235616A JP2007073810A JP2007073810A JP2008235616A JP 2008235616 A JP2008235616 A JP 2008235616A JP 2007073810 A JP2007073810 A JP 2007073810A JP 2007073810 A JP2007073810 A JP 2007073810A JP 2008235616 A JP2008235616 A JP 2008235616A
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insulating base
semiconductor element
semiconductor device
insulating substrate
frame
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Shinya Marumo
伸也 丸茂
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority to JP2007073810A priority Critical patent/JP2008235616A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To suppress occurrence of air bubbles encapsulated in a sealing resin by rounding a joint part between the inner wall of a frame and an insulating substrate. <P>SOLUTION: A semiconductor device 13 comprises an insulating substrate 1 provided with a wiring part 4 for external connection, a semiconductor element 6 which is jointed to the insulating substrate 1 using an adhesive material 5 and is electrically connected to the wiring part 4 using a metal thin wire 7, a protective body 9 jointed to the semiconductor element 6 using an adhesive material 8, a frame 2 provided to the peripheral part of the insulating substrate 1, and a sealing resin 10 which covers the metal thin wire 7. Since a joint part 11 between the inner wall of the frame 2 and the insulating substrate 1 is rounded, occurrence of air bubbles encapsulated in the sealing resin is suppressed. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、ＣＣＤやＣＭＯＳ等の撮像素子を用いた固体撮像装置等の光学デバイスなどといった、絶縁基体に半導体素子を搭載して樹脂封止されることにより構成される半導体装置およびその製造方法に関するものである。   The present invention relates to a semiconductor device configured by mounting a semiconductor element on an insulating base and resin-sealing such as an optical device such as a solid-state imaging device using an imaging element such as a CCD or CMOS, and a method for manufacturing the same. Is.

近年、携帯端末をはじめとする電子機器の小型化に伴い、半導体装置の小型化が要求されている。また、半導体装置には、小型化および薄型化だけでなく、その性能の信頼性向上を図るために封止樹脂内の気泡を除去することが要求されている。半導体装置のなかでも、特にビデオカメラやスチルカメラ等に広く用いられている固体撮像装置等の光学デバイスにはこの市場要求が強い。   In recent years, along with miniaturization of electronic devices such as portable terminals, miniaturization of semiconductor devices is required. In addition, semiconductor devices are required not only to be reduced in size and thickness, but also to remove bubbles in the sealing resin in order to improve the reliability of their performance. Among semiconductor devices, this market demand is particularly strong for optical devices such as solid-state imaging devices that are widely used in video cameras and still cameras.

従来の固体撮像装置の構成を示す図を図４に示す。図４（ａ）は同固体撮像装置の平面図、図４（ｂ）は同固体撮像装置の図４（ａ）におけるＢ−Ｂ’断面図である。
図４に示すように、従来の固体撮像装置は、絶縁基体１と、前記絶縁基体１の周縁部に設けられた枠体２と、前記枠体２で囲われた内側の絶縁基体１表面に設けられた素子搭載部３と、前記素子搭載部３の周囲から絶縁基体１の下面に導出された複数の配線部４と、素子搭載部３に接着剤５により固定された固体撮像素子６と、固体撮像素子６と配線部４とを電気的に接続している金属細線７と、前記固体撮像素子６上に接着剤８により接合された透光性の保護体９と、前記金属細線７を覆うように枠体２と固体撮像素子６の間に充填されている封止樹脂１０を有する構造である。図４（ａ）では樹脂１０を透視した状態で示している。 FIG. 4 shows a configuration of a conventional solid-state imaging device. 4A is a plan view of the solid-state imaging device, and FIG. 4B is a cross-sectional view taken along the line BB ′ in FIG. 4A of the solid-state imaging device.
As shown in FIG. 4, the conventional solid-state imaging device includes an insulating base 1, a frame 2 provided on the peripheral edge of the insulating base 1, and an inner insulating base 1 surface surrounded by the frame 2. The provided element mounting portion 3, a plurality of wiring portions 4 led out from the periphery of the element mounting portion 3 to the lower surface of the insulating base 1, and the solid-state imaging device 6 fixed to the element mounting portion 3 with an adhesive 5 The thin metal wire 7 that electrically connects the solid-state image sensor 6 and the wiring portion 4, the translucent protective body 9 joined to the solid-state image sensor 6 by the adhesive 8, and the thin metal wire 7. The sealing resin 10 is filled between the frame 2 and the solid-state imaging device 6 so as to cover the frame. FIG. 4A shows the resin 10 seen through.

かかる固体撮像装置において、封止樹脂１０に気泡を内包することなく充填するには、封止樹脂１０を充填後、減圧チャンバに入れる事で、脱泡処理を行っていた。
また特許文献１には、減圧チャンバ内でのスクリーン印刷による封止樹脂充填の方法が提案されている。
特開２００６−３０３４８２号公報 In such a solid-state imaging device, in order to fill the sealing resin 10 without enclosing bubbles, the defoaming process has been performed by filling the sealing resin 10 and then placing it in a decompression chamber.
Further, Patent Document 1 proposes a sealing resin filling method by screen printing in a decompression chamber.
JP 2006-303482 A

しかしながら、上記のように減圧チャンバを用いた場合、減圧時間にタクトがかかる為に製造コストが増大化する虞があり、一般的でない。
本発明は、上記問題に鑑みてなされたものであり、その目的とするところは、封止樹脂内に内包される気泡を容易に抑制することができる半導体装置およびその製造方法を提供することにある。 However, when the decompression chamber is used as described above, the production cost may increase due to the tact time required for decompression, which is not general.
The present invention has been made in view of the above problems, and an object of the present invention is to provide a semiconductor device capable of easily suppressing bubbles encapsulated in a sealing resin and a method for manufacturing the same. is there.

上記目的を達成するために、本発明の請求項１記載の半導体装置は、外部接続用の配線部が設けられる絶縁基体と、前記絶縁基体に接着材料にて接合されて前記配線部に電気的に接続される半導体素子と、前記絶縁基体の周縁部に設けられる枠体と、前記半導体素子を前記枠体内に封止する封止樹脂とを有し、前記枠体の内壁と前記絶縁基体との接合部が滑らかな円弧形状に加工されることを特徴とする。   In order to achieve the above object, a semiconductor device according to claim 1 of the present invention includes an insulating base provided with a wiring part for external connection, and an electrical connection to the wiring part joined to the insulating base with an adhesive material. A semiconductor element connected to the frame, a frame provided at a peripheral edge of the insulating base, and a sealing resin for sealing the semiconductor element in the frame, and an inner wall of the frame and the insulating base The joint portion is processed into a smooth arc shape.

請求項２記載の半導体装置は、請求項１記載の半導体装置において、前記半導体素子上に透光性部材が接続され、前記半導体素子が受光または発光する光学素子であることを特徴とする。   A semiconductor device according to a second aspect is the semiconductor device according to the first aspect, wherein a translucent member is connected to the semiconductor element, and the semiconductor element is an optical element that receives or emits light.

請求項３記載の半導体装置は、請求項１乃至請求項２の何れか１つに記載の半導体装置において、前記枠体の内壁角部にも滑らかな円弧形状の加工が施されることを特徴とする。   According to a third aspect of the present invention, in the semiconductor device according to any one of the first to second aspects, the inner wall corner portion of the frame body is also processed into a smooth arc shape. And

請求項４記載の半導体装置は、請求項１乃至請求項３の何れか１つに記載の半導体装置において、前記絶縁基体は、複数枚のセラミックグリーンシートを積層して形成される多層セラミック基板であることを特徴とする。   The semiconductor device according to claim 4 is the semiconductor device according to any one of claims 1 to 3, wherein the insulating base is a multilayer ceramic substrate formed by laminating a plurality of ceramic green sheets. It is characterized by being.

請求項５記載の半導体装置の製造方法は、絶縁基体を準備する工程と、前記絶縁基体を分割する工程と、前記絶縁基体上の所定の位置に半導体素子を搭載する工程と、前記絶縁基体の配線部と前記半導体素子とを電気的に接続する工程と、前記金属細線を覆う樹脂を充填する工程とを備え、前記絶縁基体を準備する工程において、準備する絶縁基体には、その表面に、個片領域と、前記個片領域の外周に沿うように当該個片領域を囲む区画線とが存在しており、前記個片領域には、半導体素子を搭載する搭載部と、該搭載部に搭載された半導体素子に電気的に接続される配線部と、前記搭載部を囲うように設けられた枠体とが存在しており、前記枠体の内壁と前記絶縁基体との接合部には押圧されることで滑らかな円弧形状が形成されることを特徴とする。   The method for manufacturing a semiconductor device according to claim 5 includes: a step of preparing an insulating base; a step of dividing the insulating base; a step of mounting a semiconductor element at a predetermined position on the insulating base; In the step of electrically connecting the wiring portion and the semiconductor element and the step of filling the resin that covers the metal thin wire, and in the step of preparing the insulating base, the insulating base to be prepared is provided on the surface thereof, There is a piece area and a partition line surrounding the piece area along the outer periphery of the piece area. The piece area includes a mounting portion on which a semiconductor element is mounted, and a mounting portion. There is a wiring portion that is electrically connected to the mounted semiconductor element, and a frame body that is provided so as to surround the mounting portion, and a joint portion between the inner wall of the frame body and the insulating substrate is present. A smooth arc shape is formed when pressed. And features.

以上により、封止樹脂内に内包される気泡を容易に抑制することができる。   As described above, bubbles included in the sealing resin can be easily suppressed.

本発明の半導体装置は、枠体の内壁と絶縁基板の接合部を滑らかな円弧形状に加工することにより、樹脂封止の際に、封止樹脂が枠体と隙間をつくることなく、枠体と接触して濡れ拡がることができるので、空気層が形成されることがなく、封止樹脂内の気泡が抑制することができるので、製品信頼性を向上させることができる。また製品品質の安定と製造歩留りの向上をすることができる。   In the semiconductor device of the present invention, the sealing resin does not form a gap with the frame body during resin sealing by processing the joint between the inner wall of the frame body and the insulating substrate into a smooth arc shape. Since it can be wetted and spread in contact with air, an air layer is not formed, and air bubbles in the sealing resin can be suppressed, so that product reliability can be improved. In addition, the product quality can be stabilized and the production yield can be improved.

以下、本発明の実施の形態を図面を参照して説明する。ここでは半導体装置の一例として固体撮像装置について説明する。
図１は本発明の固体撮像素子の構成を示す図であり、図１（ａ）は本発明の実施形態１の固体撮像装置の平面図、図１（ｂ）は同固体撮像装置の図１（ａ）におけるＡ−Ａ’断面図である。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. Here, a solid-state imaging device will be described as an example of a semiconductor device.
FIG. 1 is a diagram illustrating a configuration of a solid-state imaging device according to the present invention. FIG. 1A is a plan view of a solid-state imaging device according to Embodiment 1 of the present invention, and FIG. It is AA 'sectional drawing in (a).

この固体撮像装置１３は、セラミックや樹脂等により形成された絶縁基体１と、前記絶縁基体１の周縁部に設けられた枠体２と、前記枠体２で囲われた内側の絶縁基体１表面に設けられた素子搭載部３と、前記素子搭載部３の周囲から絶縁基体１の下面に導出された複数のメタライズ配線体等で形成している配線部４と、素子搭載部３に銀ペースト等の接着剤５により固定されたＣＣＤ等の固体撮像素子６と、固体撮像素子６の電極パッドと配線部４とを電気的に接続しているＡｕワイヤー等の金属細線７と、前記固体撮像素子６上にエポキシ樹脂等を主材とするＵＶ接着剤などの接着剤８により接合された透光性の保護体９と、前記金属細線７を覆うように枠体２と固体撮像素子６の間に充填されているエポキシ樹脂を主材とする封止樹脂１０とを有する構造である。図１（ａ）では樹脂１０を透視した状態で示している。   The solid-state imaging device 13 includes an insulating base 1 made of ceramic, resin, or the like, a frame 2 provided at the peripheral edge of the insulating base 1, and the surface of the inner insulating base 1 surrounded by the frame 2 An element mounting portion 3 provided on the substrate, a wiring portion 4 formed of a plurality of metallized wiring bodies led out from the periphery of the element mounting portion 3 to the lower surface of the insulating base 1, and a silver paste on the element mounting portion 3. A solid-state image pickup device 6 such as a CCD fixed by an adhesive 5 such as a metal wire, a metal thin wire 7 such as an Au wire that electrically connects the electrode pad of the solid-state image pickup device 6 and the wiring portion 4, and the solid-state image pickup device. A translucent protective body 9 bonded to the element 6 by an adhesive 8 such as a UV adhesive mainly composed of an epoxy resin or the like, and the frame 2 and the solid-state imaging element 6 so as to cover the metal thin wire 7. Sealing resin mainly composed of epoxy resin filled in between A structure having a 0 and. FIG. 1A shows the resin 10 in a transparent state.

この固体撮像装置が先に図４を用いて説明した従来のものと相違するのは、絶縁基体１の周縁に設けられた枠体２の内壁と絶縁基体１との接合部１１がＲ加工されて、滑らかな円弧状の面を形成している点である。   This solid-state imaging device is different from the conventional one described with reference to FIG. 4 in that the joint 11 between the inner wall of the frame 2 provided on the periphery of the insulating base 1 and the insulating base 1 is R-processed. Thus, a smooth arc-shaped surface is formed.

これによれば、絶縁基体１の周縁に設けられた枠体２の内壁と絶縁基体１が直角に接合されていた従来構造に比べて、滑らかな円弧形状の加工部があることで、素子搭載部３に塗布された封止樹脂１０は枠体２と隙間をつくることなく、枠体２と接触し、濡れ拡がることができるので、枠体２と素子搭載部３と封止樹脂１０の間に空気層が形成されることがない。   According to this, compared with the conventional structure in which the inner wall of the frame 2 provided on the periphery of the insulating base 1 and the insulating base 1 are joined at a right angle, there is a smooth arc-shaped processed portion, so that the element mounting Since the sealing resin 10 applied to the portion 3 can contact the frame body 2 without causing a gap with the frame body 2 and can spread out, the space between the frame body 2, the element mounting portion 3, and the sealing resin 10. No air layer is formed.

したがって、封止樹脂１０は気泡を内包することなく、枠体２と固体撮像素子６の間に充填することができ、製品の信頼性を向上させることができる。
また、枠体２の内壁角部１２はＲ加工されて、枠体２の隣り合う辺の接合部が滑らかな円弧状に形成されていても良い。この場合、枠体２の隣り合う辺と素子搭載部３と封止樹脂１０との間に空気層が形成されることなく、封止樹脂１０を充填することができる。 Therefore, the sealing resin 10 can be filled between the frame 2 and the solid-state imaging element 6 without enclosing bubbles, and the reliability of the product can be improved.
Further, the inner wall corner portion 12 of the frame body 2 may be R-processed so that a joint portion between adjacent sides of the frame body 2 is formed in a smooth arc shape. In this case, the sealing resin 10 can be filled without forming an air layer between adjacent sides of the frame 2, the element mounting portion 3, and the sealing resin 10.

Ｒ加工については、研磨等で簡便に実施することが可能であり、尚且つ脱泡の為の減圧チャンバ等の設備が不要になるので、時間的、コスト的メリットが大きく有益である。
以上の構造は、固体撮像装置以外の光デバイス、さらには光デバイスでない半導体装置にも適用することができ、加工も容易である。製品信頼性を向上し且つ製造コストを抑えることができるから、かかる半導体装置を実装する電子機器、たとえばビデオカメラやスチルカメラ等も、従来品に比較して信頼性を向上することができ、且つ低コストで製造することが可能である。 The R processing can be easily carried out by polishing or the like, and equipment such as a decompression chamber for defoaming is not necessary, so that it is advantageous in terms of time and cost.
The above structure can be applied to an optical device other than the solid-state imaging device, and also to a semiconductor device that is not an optical device, and is easy to process. Since the product reliability can be improved and the manufacturing cost can be reduced, the electronic equipment on which such a semiconductor device is mounted, such as a video camera or a still camera, can also improve the reliability compared to the conventional products, and It can be manufactured at low cost.

次に、本発明の固体撮像装置の製造方法について図２，図３を用いて説明する。
図２は本発明の半導体装置における絶縁基体の製造方法を示す工程断面図であり、図３は本発明の半導体装置における多面取り基板の構成を示す図である。 Next, the manufacturing method of the solid-state imaging device of the present invention will be described with reference to FIGS.
FIG. 2 is a process cross-sectional view illustrating a method for manufacturing an insulating base in a semiconductor device of the present invention, and FIG. 3 is a diagram illustrating a configuration of a multi-sided substrate in the semiconductor device of the present invention.

本実施形態における固体撮像装置の製造方法は、多面取り基板１００を分割して複数の絶縁基体１を製造し、各絶縁基体１に保護体９が接着された固体撮像素子３を実装してから封止樹脂１０を充填するというものである。以下に、具体的に示す。   The manufacturing method of the solid-state imaging device according to the present embodiment is obtained by dividing the multi-sided substrate 100 to manufacture a plurality of insulating bases 1 and mounting the solid-state imaging device 3 in which the protective body 9 is bonded to each insulating base 1. The sealing resin 10 is filled. This is specifically shown below.

まず、図２（ｆ）および図３に示す多面取り基板１００を形成する。具体的には、多面取り基板１００の表面および裏面には、複数本の区画線１０７が存在しており、多面取り基板１００の表面および裏面は、区画線１０７により複数の個辺領域（図３の例では９個の個辺領域）１０８に区画されている。そして、各個辺領域１０８には、素子搭載部および配線部４が設けられている。   First, the multi-sided substrate 100 shown in FIG. 2 (f) and FIG. 3 is formed. Specifically, a plurality of dividing lines 107 exist on the front and back surfaces of the multi-sided substrate 100, and the front and back surfaces of the multi-sided substrate 100 are separated by a plurality of single-sided regions (see FIG. 3). In the example shown in FIG. Each individual region 108 is provided with an element mounting portion and a wiring portion 4.

さらに、多面取り基板１００は、２枚のセラミックグリーンシート１０１，１０２が積層されたものであり、各シートには複数本の区画線１０７が存在しており、区画線１０７同士を重ね合わせて積層されている。上層となるセラミックグリーンシート１０１には、基板のキャビティ構造を形成するための孔１０４が形成されており、素子搭載部は、セラミックグリーンシート１０２のうち、セラミックグリーンシート１０１に覆われていない部分である。下層となるセラミックグリーンシート１０２には、配線部４が形成されている。   Further, the multi-sided substrate 100 is obtained by laminating two ceramic green sheets 101 and 102. Each sheet has a plurality of dividing lines 107, and the dividing lines 107 are overlapped and stacked. Has been. The upper ceramic green sheet 101 has holes 104 for forming the cavity structure of the substrate. The element mounting portion is a portion of the ceramic green sheet 102 that is not covered by the ceramic green sheet 101. is there. A wiring portion 4 is formed on the ceramic green sheet 102 as a lower layer.

このような他面取り基板１００を形成するために、まず、図２（ａ）に示すように、区画線１０７を備えるセラミックグリーンシート１０１を準備する。
セラミックグリーンシート１０１に形成される孔１０４は、図２（ｂ）に示すように、先端がテーパー形状の刃をもつ切断治具１０９を上方より当てて押し込むことで形成され、図２（ｃ）に示すような孔１０４が形成されたセラミックグリーンシート１０１ができる。 In order to form such other chamfered substrate 100, first, as shown in FIG. 2A, a ceramic green sheet 101 having partition lines 107 is prepared.
As shown in FIG. 2 (b), the hole 104 formed in the ceramic green sheet 101 is formed by pushing a cutting jig 109 having a blade with a tapered tip from above and pushing it in, as shown in FIG. 2 (c). A ceramic green sheet 101 having holes 104 as shown in FIG.

次に、図２（ｄ）に示すように孔１０４が形成されたセラミックグリーンシート１０１をセラミックグリーンシート１０２へ、区画線１０７を重ねるように位置合わせをし、積層する。積層する際には、プレス機２００を用いて孔１０４の内壁に円弧上の曲面を形成し、セラミックグリーンシート１０２とのつながりを滑らかにする。具体的には、図２（ｅ）に示すように、プレス機２００には押圧治具２０１が設けられており、押圧治具２０１の先端形状は、孔１０４内壁に形成したい曲面形状を備えている。そして、押圧治具２０１をその先端を下にして、多面取り基板１００の表面の上方及び素子搭載部中央部に配置する。次に、押圧治具２０１が多面取り基板１００を所定の深さにまで押込み、押圧機２００を多面取り基板１００の表面に近づける。すると、図２（ｆ）のように押圧治具２０１により孔１０４には円弧状加工が形成される。   Next, as shown in FIG. 2 (d), the ceramic green sheet 101 in which the holes 104 are formed is aligned and laminated on the ceramic green sheet 102 so that the partition lines 107 overlap. When laminating, the press machine 200 is used to form a curved surface on an arc on the inner wall of the hole 104 to smooth the connection with the ceramic green sheet 102. Specifically, as shown in FIG. 2 (e), the pressing machine 200 is provided with a pressing jig 201, and the tip shape of the pressing jig 201 has a curved surface shape to be formed on the inner wall of the hole 104. Yes. Then, the pressing jig 201 is disposed above the surface of the multi-sided substrate 100 and at the center of the element mounting portion with the tip thereof facing down. Next, the pressing jig 201 pushes the multi-sided substrate 100 to a predetermined depth, and brings the pressing machine 200 closer to the surface of the multi-sided substrate 100. Then, as shown in FIG. 2 (f), an arc-shaped process is formed in the hole 104 by the pressing jig 201.

その後、不図示であるが多面取り基板１００を焼成する。それから、区画線１０７にそって、ダイシング等により個片に分割し、図２（ｇ）に示すような絶縁基体１を製造することができる。   Thereafter, although not shown, the multi-sided substrate 100 is fired. Then, along the dividing line 107, the insulating base 1 can be manufactured as shown in FIG.

続いて、不図示であるが、接着剤５を介して各絶縁基体１の素子搭載部３に、接着剤８で保護体９が接着された固体撮像素子６を実装し、金属細線７を用いて固体撮像素子６と配線部４とをそれぞれ電気的に接続する。その後、封止樹脂１０を金属細線７を覆うように枠体２と固体撮像素子６の間に充填する。このようにして図１に示す固体撮像装置１３を製造することができる。   Subsequently, although not shown, the solid-state imaging device 6 in which the protective body 9 is bonded with the adhesive 8 is mounted on the element mounting portion 3 of each insulating base 1 via the adhesive 5, and the metal thin wire 7 is used. Thus, the solid-state imaging device 6 and the wiring part 4 are electrically connected to each other. Thereafter, the sealing resin 10 is filled between the frame body 2 and the solid-state imaging device 6 so as to cover the fine metal wires 7. In this way, the solid-state imaging device 13 shown in FIG. 1 can be manufactured.

なお、基板は、２枚のセラミックグリーンシートを積み重ねて焼成して形成された多層セラミック基板であるとしたが、セラミックグリーンシートの枚数は２枚に限定されることはなく、３枚以上でもよい。また、基板は多層セラミック基板に限定されない。   Although the substrate is a multilayer ceramic substrate formed by stacking and firing two ceramic green sheets, the number of ceramic green sheets is not limited to two and may be three or more. . Further, the substrate is not limited to a multilayer ceramic substrate.

また、光学素子の場合は保護体が透光性部材となり、その他の半導体素子の場合には必ずしも必要ではない。また、電気的接続に金属細線を用いる場合について説明したが、絶縁基板と半導体素子の電気的接続はバンプ等の他の方法を用いることもできる。   In the case of an optical element, the protector is a light-transmitting member, and is not always necessary in the case of other semiconductor elements. Moreover, although the case where a thin metal wire is used for electrical connection has been described, other methods such as bumps may be used for electrical connection between the insulating substrate and the semiconductor element.

このように、絶縁基体１の周縁に設けられた枠体２の内壁と絶縁基体１が直角に接合されていた従来構造に比べて、滑らかな円弧形状の加工部があることで、素子搭載部３に塗布された封止樹脂１０は枠体２と隙間をつくることなく、枠体２と接触し、濡れ拡がることができるので、枠体２と素子搭載部３と封止樹脂１０の間に空気層が形成されることがない。   Thus, compared to the conventional structure in which the inner wall of the frame 2 provided on the periphery of the insulating base 1 and the insulating base 1 are joined at a right angle, there is a smooth arc-shaped processed portion, so that the element mounting portion 3 does not form a gap with the frame body 2 and can contact the frame body 2 and spread out, so that the gap between the frame body 2, the element mounting portion 3, and the sealing resin 10 can be reduced. An air layer is not formed.

したがって、封止樹脂１０は気泡を内包することなく、枠体２と固体撮像素子６の間に充填することができ、製品の信頼性を向上させることができる。   Therefore, the sealing resin 10 can be filled between the frame 2 and the solid-state imaging element 6 without enclosing bubbles, and the reliability of the product can be improved.

本発明は、封止樹脂内に内包される気泡を容易に抑制することができ、絶縁基体に半導体素子を搭載して樹脂封止されることにより構成される半導体装置および半導体装置の製造方法等に有用である。   The present invention can easily suppress bubbles included in a sealing resin, a semiconductor device configured by mounting a semiconductor element on an insulating base and resin-sealing, a semiconductor device manufacturing method, and the like Useful for.

本発明の固体撮像素子の構成を示す図The figure which shows the structure of the solid-state image sensor of this invention 本発明の半導体装置における絶縁基体の製造方法を示す工程断面図Process sectional drawing which shows the manufacturing method of the insulation base | substrate in the semiconductor device of this invention 本発明の半導体装置における多面取り基板の構成を示す図The figure which shows the structure of the multi-cavity board | substrate in the semiconductor device of this invention 従来の固体撮像装置の構成を示す図The figure which shows the structure of the conventional solid-state imaging device

符号の説明Explanation of symbols

１・・・絶縁基体
２・・・枠体
３・・・素子搭載部
４・・・配線部
５・・・接着剤
６・・・固体撮像素子
７・・・金属細線
８・・・接着剤
９・・・保護体
１０・・・封止樹脂
１１・・・接合部
１２・・・内壁角部
１３・・・固体撮像装置
１００・・・多面取りシート
１０１・・・セラミックグリーンシート
１０２・・・セラミックグリーンシート
１０４・・・孔
１０７・・・区画線
１０８・・・個辺領域
１０９・・・切断治具
２００・・・プレス機
２０１・・・押圧治具 DESCRIPTION OF SYMBOLS 1 ... Insulating base | substrate 2 ... Frame 3 ... Element mounting part 4 ... Wiring part 5 ... Adhesive 6 ... Solid-state image sensor 7 ... Metal fine wire 8 ... Adhesive DESCRIPTION OF SYMBOLS 9 ... Protective body 10 ... Sealing resin 11 ... Joining part 12 ... Inner wall corner | angular part 13 ... Solid-state imaging device 100 ... Multi-chamfer sheet | seat 101 ... Ceramic green sheet 102 ...・ Ceramic green sheet 104... Hole 107 .. dividing line 108 .. individual side area 109... Cutting jig 200.

Claims (5)

外部接続用の配線部が設けられる絶縁基体と、
前記絶縁基体に接着材料にて接合されて前記配線部に電気的に接続される半導体素子と、
前記絶縁基体の周縁部に設けられる枠体と、
前記半導体素子を前記枠体内に封止する封止樹脂と
を有し、前記枠体の内壁と前記絶縁基体との接合部が滑らかな円弧形状に加工されることを特徴とする半導体装置。 An insulating base provided with a wiring portion for external connection;
A semiconductor element bonded to the insulating substrate with an adhesive material and electrically connected to the wiring portion;
A frame provided at a peripheral edge of the insulating base;
A semiconductor device comprising: a sealing resin for sealing the semiconductor element in the frame body, wherein a joint portion between the inner wall of the frame body and the insulating base is processed into a smooth arc shape. 前記半導体素子上に透光性部材が接続され、前記半導体素子が受光または発光する光学素子であることを特徴とする請求項１記載の半導体装置。   2. The semiconductor device according to claim 1, wherein a translucent member is connected on the semiconductor element, and the semiconductor element is an optical element that receives or emits light. 前記枠体の内壁角部にも滑らかな円弧形状の加工が施されることを特徴とする請求項１乃至請求項２の何れか１つに記載の半導体装置。   3. The semiconductor device according to claim 1, wherein an inner wall corner portion of the frame body is also processed into a smooth arc shape. 4. 前記絶縁基体は、複数枚のセラミックグリーンシートを積層して形成される多層セラミック基板であることを特徴とする請求項１乃至請求項３の何れか１つに記載の半導体装置。   4. The semiconductor device according to claim 1, wherein the insulating base is a multilayer ceramic substrate formed by laminating a plurality of ceramic green sheets. 絶縁基体を準備する工程と、
前記絶縁基体を分割する工程と、
前記絶縁基体上の所定の位置に半導体素子を搭載する工程と、
前記絶縁基体の配線部と前記半導体素子とを電気的に接続する工程と、
前記金属細線を覆う樹脂を充填する工程と
を備え、
前記絶縁基体を準備する工程において、準備する絶縁基体には、
その表面に、個片領域と、前記個片領域の外周に沿うように当該個片領域を囲む区画線とが存在しており、
前記個片領域には、半導体素子を搭載する搭載部と、該搭載部に搭載された半導体素子に電気的に接続される配線部と、前記搭載部を囲うように設けられた枠体とが存在しており、前記枠体の内壁と前記絶縁基体との接合部には押圧されることで滑らかな円弧形状が形成されることを特徴とする半導体装置の製造方法。 Preparing an insulating substrate;
Dividing the insulating substrate;
Mounting a semiconductor element at a predetermined position on the insulating substrate;
Electrically connecting the wiring portion of the insulating base and the semiconductor element;
Filling a resin covering the fine metal wire,
In the step of preparing the insulating substrate, the insulating substrate to be prepared includes
On the surface, there is a piece area and a dividing line surrounding the piece area so as to follow the outer periphery of the piece area,
In the individual region, a mounting portion for mounting a semiconductor element, a wiring portion electrically connected to the semiconductor element mounted on the mounting portion, and a frame provided so as to surround the mounting portion A method of manufacturing a semiconductor device, characterized in that a smooth arc shape is formed by pressing at a joint portion between an inner wall of the frame and the insulating base.
JP2007073810A 2007-03-22 2007-03-22 Semiconductor device and manufacturing method thereof Pending JP2008235616A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015122299A1 (en) * 2014-02-13 2015-08-20 ソニー株式会社 Solid-state imaging device, electronic apparatus, and solid-state imaging device manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015122299A1 (en) * 2014-02-13 2015-08-20 ソニー株式会社 Solid-state imaging device, electronic apparatus, and solid-state imaging device manufacturing method

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